JP2005101964A - High frequency multiple oscillation circuit - Google Patents

High frequency multiple oscillation circuit Download PDF

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JP2005101964A
JP2005101964A JP2003333849A JP2003333849A JP2005101964A JP 2005101964 A JP2005101964 A JP 2005101964A JP 2003333849 A JP2003333849 A JP 2003333849A JP 2003333849 A JP2003333849 A JP 2003333849A JP 2005101964 A JP2005101964 A JP 2005101964A
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oscillation
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impedance matching
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JP2005101964A5 (en
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Norihisa Nomura
記央 野村
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Toyo Communication Equipment Co Ltd
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Toyo Communication Equipment Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem of a conventional crystal oscillation circuit of a 185 MHz band that the target spurious characteristic of -40dB or below cannot be obtained when an amplifier circuit comprising a common collector amplifier circuit and a buffer circuit apply a multi-stage multiple amplification to an output frequency of the crystal oscillation circuit for an impedance matching purpose between stages to be going to obtain a high frequency oscillation output of 700 MHz band. <P>SOLUTION: A π type impedance matching circuit 108a configured with a series circuit of a high pass filter 201 and a low pass filter 202 and whose characteristics are composed is additionally connected to an impedance conversion circuit 109 of prior arts, an impedance matching circuit 108 composing a capacitor C21 of the π type impedance matching circuit 108a and a capacitor C18 of the impedance conversion circuit 109 is used for an output circuit of a high frequency multiple amplifier circuit. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、発振回路に関し、特に優れたスプリアス特性を有する高周波逓倍発振回路に関する。 The present invention relates to an oscillation circuit, and more particularly to a high-frequency multiplication oscillation circuit having excellent spurious characteristics.

情報通信インフラの伝送速度の高速化に伴い、クロック周波数源である発振器に対する高周波化の要求は増々強くなっている。周波数安定度の高い水晶発振器において200MHz以上の高周波発振出力を得るには、PLL発振回路、オーバートーン発振回路あるいは逓倍回路等を用いるのが一般的である。
これら各種発振回路のうち、電圧制御型発握器(以下VCOと称す)を用いたPLL発振回路は、所望の高周波領域にて発振するVCOの出力信号をフイードバックし、周波数安定度の高い内部基準信号(水晶発振器等)との位相比較を行うことにより、高周波出力の安定度を保っている。
この内部に設けた位相比較器の出力信号は交流成分を多く含むので、不要な領域の周波数成分を除去するためにループフィルターを必要としているが、このループフィルターの帯域外においてはPLL発振回路の位相雑音特性が劣化するという特徴をもっている。
一方、オーバートーン発振回路を用いた電圧制御型水晶発振器(以下、VCXOという)の場合は、そのオーバートーン次数の二乗に比例して周波数の可変感度が劣化するため、周波数制御範囲を広くすることが困難となる。
As the transmission speed of the information communication infrastructure increases, the demand for higher frequency for the oscillator that is the clock frequency source is becoming stronger. In order to obtain a high-frequency oscillation output of 200 MHz or higher in a crystal oscillator with high frequency stability, a PLL oscillation circuit, an overtone oscillation circuit, a multiplication circuit, or the like is generally used.
Among these various oscillation circuits, a PLL oscillation circuit using a voltage-controlled handshake (hereinafter referred to as VCO) feeds back an output signal of a VCO that oscillates in a desired high frequency region, and has an internal reference with high frequency stability. By comparing the phase with a signal (crystal oscillator or the like), the stability of the high frequency output is maintained.
Since the output signal of the phase comparator provided inside contains a large amount of alternating current components, a loop filter is required to remove frequency components in unnecessary regions. However, outside the loop filter band, the PLL oscillation circuit The phase noise characteristic is deteriorated.
On the other hand, in the case of a voltage-controlled crystal oscillator using an overtone oscillation circuit (hereinafter referred to as VCXO), the frequency variable sensitivity deteriorates in proportion to the square of the overtone order, so the frequency control range should be widened. It becomes difficult.

したがって、周波数制御範囲を広くし、かつ良好な位相雑音特性を得るためには、逓倍方式を用いたVCXOが最も適していると言える。逓倍方式のVCXOにおいては、所望の高周波成分を選択するための周波数選択手段として近年ではSAWフィルタを用いたものも提案きれているが、設計変更の自由度や、コスト面を考慮すると、SAWフィルタよりもコイルとコンテンサによる周波数選択回路を採用した方が有利である。 Therefore, it can be said that VCXO using a multiplication method is most suitable for widening the frequency control range and obtaining good phase noise characteristics. In the VCXO of the multiplication method, a SAW filter using a SAW filter has recently been proposed as a frequency selection means for selecting a desired high-frequency component. However, considering the degree of freedom of design change and cost, the SAW filter It is more advantageous to adopt a frequency selection circuit using a coil and a contentor than to a circuit.

周波数選択回路としてコイルとコンデンサを用いた逓倍方式によるVCXOの従来例とし、本出願人が特願2003-111156号において開示したVCXOがある。
図4は、同号に開示されたVCXOを再掲した電気回路図である。同図に示すように、本VCXOは、コルピッツ型水晶発振回路101の出力信号よりインダクタL1とコンデンサC3の共振回路である周波数選択回路102、及びインダクタL2とコンデンサC5の共振回路である周波数選択回路103によって所望の周波数のみを取出し、次段のコレクタ接地増幅回路104でインピーダンスのマッチングをとり、次のエミッタ接地増幅回路105によって出力レベルを大きくして、さらに、インダクタL3とコンデンサC9の共振回路である周波数選択回路106及びインダクタL4とコンデンサC11の共振回路である周波数選択回路107により取出した所望の周波数をインピーダンス変換回路109を介してOUT端子より出力するものである。
There is a VCXO disclosed in Japanese Patent Application No. 2003-111156 as a conventional example of a VCXO by a multiplication method using a coil and a capacitor as a frequency selection circuit.
FIG. 4 is an electric circuit diagram showing the VCXO disclosed in the same issue again. As shown in the figure, this VCXO is based on an output signal of the Colpitts crystal oscillation circuit 101, a frequency selection circuit 102 which is a resonance circuit of an inductor L1 and a capacitor C3, and a frequency selection circuit which is a resonance circuit of an inductor L2 and a capacitor C5. 103, only the desired frequency is extracted, impedance matching is performed by the next collector grounded amplifier circuit 104, the output level is increased by the next grounded emitter amplifier circuit 105, and the resonance circuit of the inductor L3 and the capacitor C9. A desired frequency extracted by a frequency selection circuit 106 and a frequency selection circuit 107 which is a resonance circuit of an inductor L4 and a capacitor C11 is output from an OUT terminal via an impedance conversion circuit 109.

前記コルピッツ型水晶発振回路101は、発振用トランジスタQlのベースに抵抗R1、R2から成るベースバイアス回路を接続すると共に、ベースと接地との間に負椅容量の一部を構成する固定コンデンサC1、C2との直列回路を接続し、更に、この直列回路の接続中点とトランジスタQ1のエミッタとを接続すると共に、エミッタ抵抗R3を接続する。
また、水晶振動子Y1の一端にはトランジスタQ1のベースを接続し、他端は接地している。
The Colpitts-type crystal oscillation circuit 101 has a base bias circuit composed of resistors R1 and R2 connected to the base of the oscillation transistor Ql, and a fixed capacitor C1 constituting a part of the chair capacity between the base and the ground, A series circuit with C2 is connected, and further, a connection midpoint of this series circuit and the emitter of the transistor Q1 are connected, and an emitter resistor R3 is connected.
Further, the base of the transistor Q1 is connected to one end of the crystal resonator Y1, and the other end is grounded.

前記コレクタ接地増幅回路104は、トランジスタQ2のベースに抵抗R4、R5から成るベースバイアス回路を接続すると共に、エミッタと接地との間にエミッタ抵抗R6を接続したものであり、高い入力インピーダンスと低い出力インピーダンスを有するインピーダンスマッチング回路を形成している。 The grounded collector amplifier circuit 104 has a base bias circuit composed of resistors R4 and R5 connected to the base of the transistor Q2 and an emitter resistor R6 connected between the emitter and the ground, and has a high input impedance and a low output. An impedance matching circuit having an impedance is formed.

前記エミッタ接地増幅回路105は、増幅用トランジスタQ3のベースに抵抗R7、R8から成るベースバイアス回路を接続すると共に、トランジスタQ3のエミッタと接地との間にバイアス抵抗R9とバイパスコンデンサC8が接続されて高周波的に接地されており、所謂バッファ回路として機能している。 The grounded-emitter amplifier circuit 105 has a base bias circuit composed of resistors R7 and R8 connected to the base of the amplifying transistor Q3, and a bias resistor R9 and a bypass capacitor C8 connected between the emitter of the transistor Q3 and the ground. It is grounded at a high frequency and functions as a so-called buffer circuit.

前記インピーダンス変換回路109は、インダクタL5と並列に固定コンデンサC17、C18の直列回路が接続されており、この直列回路の接続中点より出力を取出すことによって、所望の周波数において出力端側とのインピーダンスマッチングが取れるよう調整している。 The impedance conversion circuit 109 is connected to a series circuit of fixed capacitors C17 and C18 in parallel with the inductor L5. By taking out the output from the connection middle point of the series circuit, the impedance conversion circuit 109 has an impedance with the output end side at a desired frequency. Adjustments are made to ensure matching.

コンデンサC4、C6、C7、C10及びCl2は結合コンデンサであり、小さな値とすることにより各回路間を疎結合にして所望の高周波数帯における各回路間の影響を極力抑えるようにしている。電源Vccは固定コンデンサC16により高周波的に接地されている。
特願2003−11156号
Capacitors C4, C6, C7, C10, and Cl2 are coupling capacitors, and are set to a small value so that the circuits are loosely coupled to suppress the influence between the circuits in a desired high frequency band as much as possible. The power source Vcc is grounded at a high frequency by a fixed capacitor C16.
Japanese Patent Application No. 2003-11156

しかしながら、図4に示される回路は、600MHz帯の発振出力に対応した回路構成あり、発振器に対する更なる高周波化の要求に応ずべく、同じ回路構成おいて、発振段に185MHzの水晶振動子を用い、この発振周波数を4逓倍して740MHzの出力周波数を出力する発振回路を、図5の回路定数表に示される回路部品で構成し、そのスプリアス特性を計測した。
その結果は、図6のスプリアス特性図に示すように、−32dBであった。即ち、図4に示される回路構成においては、700MHz帯の発振回路であってスプリアス除去率が−40dB以下の目標の発振回路を構成するのは困難であるという問題があった。
本発明は、上記課題を解決するためになされたものであって、簡単な回路構成で優れたスプリアス特性が得られる高周波逓倍発振回路を提供することを目的とする。
However, the circuit shown in FIG. 4 has a circuit configuration corresponding to an oscillation output in the 600 MHz band, and uses a 185 MHz crystal resonator in the oscillation stage in the same circuit configuration in response to the demand for higher frequency for the oscillator. An oscillation circuit that multiplies this oscillation frequency by 4 and outputs an output frequency of 740 MHz is composed of circuit components shown in the circuit constant table of FIG. 5, and its spurious characteristics are measured.
The result was −32 dB as shown in the spurious characteristic diagram of FIG. That is, the circuit configuration shown in FIG. 4 has a problem that it is difficult to configure a target oscillation circuit that is a 700 MHz band oscillation circuit and has a spurious rejection rate of −40 dB or less.
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a high-frequency multiplier oscillation circuit that can obtain excellent spurious characteristics with a simple circuit configuration.

上記課題を解決するため、請求項1においては、複数段の逓倍増幅回路によって所望の周波数の高周波出力信号を得る高周波逓倍発振回路であって、出力部にハイパスフィルタ回路とローパスフィルタ回路の直列回路を付加することにより、前記高周波逓倍発振回路と負荷回路間のインピーダンスのマッチングをとりスプリアス特性の改善を図ったことを特徴とする。
また、請求項2においては、請求項1に記載の高周波逓倍発振回路において、前記高周波逓倍発振回路が、共振周波数が180MHz帯の圧電振動子を用いた発振段と段間のインピーダンスマッチングのためのコレクタ接地増幅回路とバッファ回路とで構成され、前記発振段出力を4逓倍して700MHz帯の出力周波数の信号を出力する高周波逓倍発振回路あることを特徴とする。
In order to solve the above-described problem, in claim 1, a high-frequency multiplication oscillation circuit that obtains a high-frequency output signal of a desired frequency by a multi-stage multiplication amplification circuit, and a series circuit of a high-pass filter circuit and a low-pass filter circuit in an output section By adding the above, the impedance matching between the high-frequency multiplier oscillation circuit and the load circuit is performed to improve the spurious characteristics.
According to a second aspect of the present invention, in the high frequency multiplied oscillation circuit according to the first aspect, the high frequency multiplied oscillation circuit is used for impedance matching between an oscillation stage using a piezoelectric vibrator having a resonance frequency of 180 MHz and between the stages. A high frequency multiplying oscillation circuit configured by a grounded collector amplifier circuit and a buffer circuit, which multiplies the oscillation stage output by 4 and outputs a signal having an output frequency of 700 MHz band.

本発明の水晶発振回路においては、従来の高周波逓倍発振回路の出力部にハイパスフィルタ回路とローパスフィルタ回路の直列回路で構成されたインピーダンス整合回路を付加することにより、該高周波逓倍発振回路と負荷回路間のインピーダンスマッチングを精度高くとる構成にしたので、例えば、185MHzの発振回路出力を4逓倍して740MHzの発振出力を得る発振回路において、−40dBのスプリアス除去特性が得られ、従来回路より8dBの改善結果が得られた。
この結果、本発振回路は、ますます高周波化する水晶発振器に対して、簡単な回路で所定のスプリアス特性を持つ発振器を提供する上で大いに効果を表す。
In the crystal oscillation circuit of the present invention, an impedance matching circuit composed of a series circuit of a high-pass filter circuit and a low-pass filter circuit is added to the output part of the conventional high-frequency multiplication oscillation circuit, thereby the high-frequency multiplication oscillation circuit and the load circuit For example, in an oscillation circuit that obtains a 740 MHz oscillation output by multiplying the 185 MHz oscillation circuit output by four, a spurious elimination characteristic of −40 dB is obtained. Improvement results were obtained.
As a result, the present oscillation circuit has a great effect in providing an oscillator having a predetermined spurious characteristic with a simple circuit with respect to a crystal oscillator with higher frequency.

以下、本発明を図面に示した実施の形態に基づいて説明する。図1は、本発明に係わる470MHz高周波逓倍発振回路の実施の一形態例を示す図で、(a)は電気回路図、(b)は同回路の回路定数表である。
同図(a)に示すように、本発振回路は、コルピッツ型水晶発振回路101と、周波数選択回路102、103と、コレクタ接地増幅回路104と、エミッタ接地増幅回路105と、周波数選択回路106、107と、インピーダンス整合回路108とで構成される。
本発振回路の前記コルピッツ型水晶発振回路101と周波数選択回路102、103とコレクタ接地増幅回路104とエミッタ接地増幅回路105と周波数選択回路106、107の機能動作は、図4に示す従来の発振回路の同一符号の各構成部位の機能動作と同一である。そして、前記インピーダンス整合回路108は、本発明の発振回路の特徴として、以下に述べるように構成される。
したがって、図4と共通部分の説明を省略して、主としてインピーダンス整合回路108の機能動作について説明する。
Hereinafter, the present invention will be described based on embodiments shown in the drawings. 1A and 1B are diagrams showing an embodiment of a 470 MHz high frequency multiplication oscillator according to the present invention. FIG. 1A is an electric circuit diagram, and FIG. 1B is a circuit constant table of the circuit.
As shown in FIG. 5A, this oscillation circuit includes a Colpitts crystal oscillation circuit 101, frequency selection circuits 102 and 103, a grounded collector amplification circuit 104, a grounded emitter amplification circuit 105, a frequency selection circuit 106, 107 and an impedance matching circuit 108.
The functional operation of the Colpitts crystal oscillation circuit 101, frequency selection circuits 102 and 103, grounded collector amplification circuit 104, grounded emitter amplification circuit 105, and frequency selection circuits 106 and 107 of this oscillation circuit is the same as that of the conventional oscillation circuit shown in FIG. This is the same as the functional operation of each component with the same reference numeral. The impedance matching circuit 108 is configured as described below as a feature of the oscillation circuit of the present invention.
Therefore, the description of the common parts with FIG. 4 is omitted, and the functional operation of the impedance matching circuit 108 will be mainly described.

図2は、前記インピーダンス整合回路108の構成を説明する回路図である。
同図(a)に示すように、前記インピーダンス整合回路108の基本構成は、図4のインピーダンス変換回路109に、コンデンサC21とインダクタL21とから成るハイパスフィルタ201と、インダクタL22とコンデンサC22とから成るローパスフィルタ202との直列回路で構成されるインピーダンス整合回路108aを接続した回路構成とする。
このハイパスフィルタ201は、図4の出力(OUT)端における出力インピーダンスと基準のインピーダンスとの間でインピーダンス整合がとれた整合回路を形成し、ローパスフィルタ202は、前記基準のインピーダンスと本発振回路の負荷インピーダンスとの間でインピーダンス整合がとれた整合回路を形成する。
そして、前記ハイパスフィルタ201とローパスフィルタ202とはインダクタL21及びL22とを合成することによって、図2(b)に示す所定の周波数帯のみが通過するコンデンサC21,22、インダクタL23で構成されるπ型のインピーダンス整合回路108aに変換できる。
FIG. 2 is a circuit diagram illustrating the configuration of the impedance matching circuit 108.
As shown in FIG. 4A, the basic configuration of the impedance matching circuit 108 is the same as the impedance conversion circuit 109 of FIG. 4 except that it includes a high-pass filter 201 including a capacitor C21 and an inductor L21, an inductor L22, and a capacitor C22. The circuit configuration is such that an impedance matching circuit 108a configured by a series circuit with the low-pass filter 202 is connected.
The high-pass filter 201 forms a matching circuit in which impedance matching is established between the output impedance at the output (OUT) end of FIG. 4 and a reference impedance, and the low-pass filter 202 is configured to match the reference impedance and the oscillation circuit. A matching circuit having impedance matching with the load impedance is formed.
The high-pass filter 201 and the low-pass filter 202 synthesize the inductors L21 and L22 so that only a predetermined frequency band shown in FIG. 2B passes through the capacitors C21 and 22 and the inductor L23. Type impedance matching circuit 108a.

前記インピーダンス整合回路108aを図4(a)のインピーダンス変換回路109の出力端に接続し、該インピーダンス変換回路109のコンデンサC18と前記付加接続したインピーダンス整合回路108aのコンデンサC21とを合成して得られた回路が図1のインピーダンス整合回路108である。
上記構成とすることによって本発振回路と負荷との間のインピーダンス整合が精度よく行われると共に、スプリアスをより確実に除去することができる。
The impedance matching circuit 108a is connected to the output terminal of the impedance conversion circuit 109 in FIG. 4A, and the capacitor C18 of the impedance conversion circuit 109 and the capacitor C21 of the additional impedance matching circuit 108a are synthesized. This circuit is the impedance matching circuit 108 of FIG.
With the above configuration, impedance matching between the oscillation circuit and the load can be performed with high accuracy, and spurious can be more reliably removed.

図3は、共振周波数が185MHzの水晶振動子を用いて、その発振回路出力を4逓倍して740MHzの発振出力を得る高周波逓倍発振回路を、図1(b)のスプリアス特性図である。
同図に示すように、−40.8dBのスプリアス除去特性が得られ、従来回路のスプリアス特性図(スプリアス除去率−32dB)と比べて約9dBの改善結果が得られた。
したがって、π型のインピーダンス整合回路108aをもとに構成した図1のインピーダンス整合回路108は、高周波逓倍回路においてスプリアス除去効果が極めて優れていることがわかる。
FIG. 3 is a spurious characteristic diagram of FIG. 1B showing a high frequency multiplication oscillation circuit that obtains an oscillation output of 740 MHz by multiplying the oscillation circuit output by 4 using a crystal resonator having a resonance frequency of 185 MHz.
As shown in the figure, a spurious removal characteristic of −40.8 dB was obtained, and an improvement result of about 9 dB was obtained as compared with the spurious characteristic diagram of the conventional circuit (spurious removal rate −32 dB).
Therefore, it can be seen that the impedance matching circuit 108 of FIG. 1 configured based on the π-type impedance matching circuit 108a has an extremely excellent spurious elimination effect in the high-frequency multiplication circuit.

本発明に係わる高周波逓倍発振回路の実施の一形態例を示す図で、(a)は電気回路図、(b)は同回路の回路定数表。BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows one example of embodiment of the high frequency multiplication oscillator concerning this invention, (a) is an electrical circuit diagram, (b) is a circuit constant table | surface of the circuit. インピーダンス変換回路108の構成を説明する回路図。FIG. 6 is a circuit diagram illustrating a configuration of an impedance conversion circuit 108. 本発明に係わる高周波逓倍発振回路におけるスプリアス特性図。The spurious characteristic figure in the high frequency multiplication oscillator concerning this invention. 従来例としての特願2003-111156号に開示されたVCXOを再掲した電気回路図。The electric circuit diagram which reprinted VCXO disclosed by Japanese Patent Application No. 2003-111156 as a prior art example. 図4の回路構成による740MHz発振回路の回路定数表。The circuit constant table | surface of the 740 MHz oscillation circuit by the circuit structure of FIG. 従来例の回路構成による740MHzVCXOにおけるスプリアス特性図。The spurious characteristic figure in 740MHzVCXO by the circuit structure of a prior art example.

符号の説明Explanation of symbols

101・・コルピッツ型水晶発振回路、 102、103・・周波数選択回路、
104・・コレクタ接地増幅回路、 105・・エミッタ接地増幅回路、
106、107・・周波数選択回路、 108、108a・・インピーダンス整合回路、
109・・インピーダンス変換回路、
C1、C2、C3、C4、C5、C6、C7、C8、C9、C10、C11、C12、C13、C14、C15、C16、C17、C18、C21、C22・・コンデンサ、
L1、L2、L3、L4、L5、L6、L21、L22、L23・・インダクタ、
Q1,Q2,Q3・・トランジスタ、
R1、R2、R3、R4、R5、R6、R7、R8、R9・・抵抗、 Y1・・水晶振動子
















101 ··· Colpitts crystal oscillation circuit, 102, 103 · · frequency selection circuit,
104 .. Grounded collector amplifier circuit 105.. Grounded emitter amplifier circuit
106, 107 ... Frequency selection circuit 108, 108a Impedance matching circuit
109 .. Impedance conversion circuit,
C1, C2, C3, C4, C5, C6, C7, C8, C9, C10, C11, C12, C13, C14, C15, C16, C17, C18, C21, C22, capacitors,
L1, L2, L3, L4, L5, L6, L21, L22, L23 .. Inductor,
Q1, Q2, Q3 ... Transistors
R1, R2, R3, R4, R5, R6, R7, R8, R9 ... Resistance, Y1 ... Crystal oscillator
















Claims (2)

複数段の逓倍増幅回路によって所望の周波数の高周波出力信号を得る高周波逓倍発振回路であって、
出力部にハイパスフィルタ回路とローパスフィルタ回路の直列回路を付加することにより、前記高周波逓倍発振回路と負荷回路間のインピーダンスのマッチングをとりスプリアス特性の改善を図ったことを特徴とする高周波逓倍発振回路。
A high-frequency multiplication oscillation circuit that obtains a high-frequency output signal of a desired frequency by a multi-stage multiplication amplification circuit,
A high-frequency multiplication oscillation circuit characterized by adding a series circuit of a high-pass filter circuit and a low-pass filter circuit to the output unit to achieve impedance matching between the high-frequency multiplication oscillation circuit and the load circuit and thereby improving spurious characteristics .
前記高周波逓倍発振回路が、共振周波数が180MHz帯の圧電振動子を用いた発振段と段間のインピーダンスマッチングのためのコレクタ接地増幅回路とバッファ回路とで構成され、前記発振段出力を4逓倍して700MHz帯の出力周波数の信号を出力する高周波逓倍発振回路であることを特徴とする請求項1に記載の高周波逓倍発振回路。






















The high-frequency multiplying oscillator circuit includes an oscillation stage using a piezoelectric vibrator having a resonance frequency of 180 MHz, a grounded collector amplifier circuit for impedance matching between the stages, and a buffer circuit, and multiplies the output of the oscillation stage by four. 2. The high frequency multiplication oscillator according to claim 1, wherein the high frequency multiplication oscillation circuit outputs a signal having an output frequency of 700 MHz band.






















JP2003333849A 2003-09-25 2003-09-25 High frequency multiple oscillation circuit Withdrawn JP2005101964A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008035409A (en) * 2006-07-31 2008-02-14 Nippon Dempa Kogyo Co Ltd Sensor
KR101210457B1 (en) * 2006-07-27 2012-12-10 엘지이노텍 주식회사 oscillating circuit
CN116961588A (en) * 2023-09-20 2023-10-27 成都世源频控技术股份有限公司 Low-noise frequency multiplication crystal oscillator circuit

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101210457B1 (en) * 2006-07-27 2012-12-10 엘지이노텍 주식회사 oscillating circuit
JP2008035409A (en) * 2006-07-31 2008-02-14 Nippon Dempa Kogyo Co Ltd Sensor
CN116961588A (en) * 2023-09-20 2023-10-27 成都世源频控技术股份有限公司 Low-noise frequency multiplication crystal oscillator circuit
CN116961588B (en) * 2023-09-20 2023-12-29 成都世源频控技术股份有限公司 Low-noise frequency multiplication crystal oscillator circuit

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