JP2005101136A - Stage equipment and aligner - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce influence of heat generated in a heat source like drive mechanism by comparatively simple configuration. <P>SOLUTION: A pattern of reticle is imprinted on a wafer W through a projection optical system. The wafer W is held on a wafer table WTB through a wafer holder 25. The wafer table WTB is supported by the supporting part of a ceiling plate 30A through a Z tilt drive mechanism 38. A linear motor car 36X for driving the wafer table WTB is constituted of an X moving member 32X installed on the footprint of the ceiling plate 30A, and an X axis linear guide 34X including an armature unit 60 arranged along a guide surface. In order to intercept radiant heat from the armature unit 60, the reflecting film 71 of high reflection factor is installed on the footprint of the wafer table WTB. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a stage technology for moving an object, and is used to transfer a mask pattern onto a substrate in a lithography process for manufacturing various devices such as a semiconductor integrated circuit, a liquid crystal display element, or a thin film magnetic head. The exposure apparatus is suitable for use in a stage system for positioning or moving a mask or a substrate. The present invention further relates to an exposure technique using the stage technique.

  For example, in a lithography process for manufacturing a semiconductor integrated circuit, a reticle (or photomask or the like) pattern as a mask is coated with a resist as a substrate (photosensitive substrate or sensitive object) via a projection optical system ( In addition, an exposure apparatus such as a stepper type or a scanning stepper type is used for transferring the image to each shot area of a glass plate or the like. In these exposure apparatuses, a reticle stage system and a wafer stage system are provided for positioning and moving the reticle and wafer, respectively. Recently, in order to move the reticle and wafer smoothly and at high speed, the drive system of those stage systems is mainly a non-contact type such as an actuator (voice coil motor) using a linear motor or Lorentz force. A drive device that can generate a high thrust between the stator and the mover is used.

  In such a drive device such as a linear motor, a coil (or winding) is mounted on the stator or the mover, but the amount of heat generated in the coil increases in the process of repeated positioning and movement. For example, in the wafer stage system, when the heat generated by the coil is transferred to the wafer table that holds the wafer and to which the movable mirror for position measurement is fixed, the wafer table and the wafer gradually expand, respectively. As a result, the positioning accuracy and the synchronization accuracy during scanning exposure deteriorate. Therefore, exposure accuracy such as overlay accuracy and resolution is lowered.

Along with the further miniaturization of integrated circuits in recent years, a decrease in exposure accuracy due to the influence of heat generated by a stage-type drive mechanism, which has been negligible in the past, is becoming a problem. Therefore, recently, for example, in a wafer stage system, in order to reduce the influence of heat generated in a coil, a cylindrical member is installed so as to surround the entire circumference of the coil, and cooling water is further injected into the cylindrical member. There has been proposed a heat shield mechanism adapted to flow (see, for example, Patent Document 1).
JP 2001-244196 A

Conventionally, a heat shield mechanism has been provided in which cooling water flows so as to surround a coil of a drive device such as a linear motor, but heat conduction or radiation from the coil still reaches the wafer table, and the wafer table and the upper surface thereof. There was a risk that the wafers would gradually expand and the positioning accuracy and the like would gradually deteriorate.
Moreover, when using the heat shield mechanism through which cooling water flows, cooling water flows in a predetermined direction along the movable part. In such a configuration in which the cooling water flows in a specific direction, the load (reaction) may vary greatly depending on the moving direction of the movable part, and the time until positioning is completed, the accuracy of the moving speed, etc. The drive performance of the stage system may be reduced.

  Furthermore, since the heat shield mechanism that encloses the entire circumference of the coil of the drive device is large, the movable part of the stage system must be large and heavy, and the thrust must be increased to increase the drive speed. There is. For this reason, there is a problem that the calorific value is increased. Therefore, development of a mechanism that can reduce the influence of heat generation in the coil with a simpler configuration than that of the heat shield mechanism is also desired.

  Similarly, regardless of whether the driving device is a single axis or a plurality of axes, and not only in the wafer stage system but also in the reticle stage system, it is not limited to the stage system of the exposure apparatus, but is also a laser repair apparatus and semiconductor inspection apparatus. Even in a device that needs to move other objects along a predetermined surface, the influence of heat generated by a heat source such as a drive device such as a linear motor, particularly heat conduction between radiant heat and air, is affected. Development of a mechanism that can be mitigated with a simple configuration is desired.

In view of such a point, the present invention has a first object to provide a stage technique that can reduce the influence of heat such as radiant heat generated by a heat source such as a drive mechanism with a simple configuration.
Furthermore, a second object of the present invention is to provide a stage technique that can suppress a decrease in driving performance of a movable part when the influence of heat is reduced using a medium such as a refrigerant.
A further object of the present invention is to provide an exposure technique that can realize high-precision exposure using such a stage technique.

A first stage apparatus according to the present invention is a stage apparatus that moves a sample stage (WTB) holding an object (W) along a guide surface (40a). At least a part is subjected to low emissivity treatment.
According to the present invention, even if a heat source such as a coil of a driving device is disposed on the bottom surface (the back surface of the object mounting surface) of the sample stage, the heat from the heat source or radiation is not generated. The temperature of the sample stage and the object hardly rises because it is almost cut off by the portion subjected to the low emissivity treatment. Therefore, the influence of heat from the heat source can be reduced with a simple configuration.

In this case, an example of the low emissivity process includes any one of a coating process made of a coated or metal-plated film provided on at least a part of the back surface, or a polishing process of the back surface.
Further, the driving device (36X) includes a mover (32X) connected to the sample table and a stator (60) arranged along the guide surface, and drives the sample table along the guide surface. ) May be further provided. In this configuration, the heat generated in the mover or stator is substantially cut off by the portion subjected to the low emissivity treatment.

  The second stage device according to the present invention is a stage device for moving a sample stage (WTB) holding an object (W) along a guide surface (40a), and a movable element (32X) connected to the sample stage. ) And a stator (60) arranged along the guide surface, the drive device (36X) for driving the sample stage along the guide surface, and the mover and the sample stage are separated from each other. And a flat partition member (30A) arranged in such a manner that at least a part of the surface of the partition member facing the sample stage is subjected to a low emissivity treatment.

According to the present invention, heat such as radiant heat generated in the mover or stator (heat source) of the drive device is substantially blocked by the portion of the partition member that has been subjected to the low emissivity treatment, The temperature of the sample stage and its object hardly rises. Therefore, the influence of heat from the heat source can be reduced with a simple configuration.
A third stage apparatus according to the present invention is a stage apparatus that moves a sample stage (WTB) holding an object (W) along a guide surface (40a), and a mover (32X) connected to the sample stage. ) And a stator (60) arranged along the guide surface, the drive device (36X) for driving the sample stage along the guide surface, and the mover and the sample stage are separated from each other. A plate-like partition member (30A) arranged in this way, and a plate-like member arranged between the partition member and the sample stage, and low emissivity treatment on at least a part of the plate-like member Is given.

According to the present invention, heat such as radiant heat generated by the mover or the stator (heat source) of the drive device is substantially blocked by the plate-like member, and the temperature of the sample stage and the object is almost the same. Does not rise. Therefore, the influence of heat from the heat source can be reduced with a simple configuration.
In these cases, the driving device can be a moving magnet type linear motor. In the moving magnet system, the mover includes a magnet, and the magnet itself hardly generates heat, so that the temperature of the sample stage to which the mover is connected can be maintained more stably.

Further, as an example, the partition member includes alumina or ceramics, and the low emissivity process is a process of coating a metal film on at least a part of the facing surface. The metal is nickel, for example, and this film can be easily formed by metal plating.
In these cases, the deformation preventing portion (74A) may be provided on the surface subjected to the low emissivity treatment. For example, when the low emissivity treatment is a coating of a metal film, stress acts on the sample stage or the partition member due to a bimetallic effect due to a difference in linear expansion coefficient between the coating and the sample stage or the partition member. There is a fear. By providing the deformation preventing portion (for example, a slit), the stress is released, so that the deformation of the sample stage or the partition member is suppressed.

  A fourth stage apparatus according to the present invention is a stage apparatus that moves a sample stage (WTB) holding an object (W) along a guide surface (40a), and a movable element (32X) connected to the sample stage. ) And a stator (60) arranged along the guide surface, the drive device (36X) for driving the sample stage along the guide surface, and the mover and the sample stage are separated from each other. The partition member (30A) is arranged in this manner, and the partition member is formed from a material having a thermal conductivity of 50 W / (m · K) or more.

  According to the present invention, the heat generated by the mover or the stator (heat source) of the drive device is diffused by the partition member having a high thermal conductivity, and thus is not transmitted to the sample stage. As a result, the temperature of the sample stage and the object hardly rises. Therefore, the influence of heat from the heat source can be reduced with a simple configuration. In this case, an example of the material of the partition member is aluminum, ceramics such as silicon carbide (SiC), a material containing silicon carbide and aluminum, or a material in which silicon is further added thereto.

  Next, a fifth stage apparatus according to the present invention includes a mover (32X) coupled to a sample stage in a stage apparatus that moves a sample stage (WTB) holding an object (W) along a guide surface. A driving device (36X) including a stator (60) disposed along the guide surface, and driving the sample table along the guide surface, and the mover and the sample table separated from each other. A plate-shaped partition member (30A1) arranged, and a medium for adjusting the temperature of the partition member is passed through a flow path (77) provided in the interior of the partition member and at least a part of the surface thereof. is there.

According to the present invention, even if heat such as radiant heat generated by the movable element or the stator (heat source) is transmitted to the partition member, the temperature rise is suppressed by the medium flowing along the partition member. Therefore, since the temperature of the sample stage and the object hardly rises, the influence of heat generated in the heat source is reduced with a relatively simple configuration.
In this case, a temperature sensor (87) for measuring the temperature of the sample stage may be further provided, and the temperature of the medium may be controlled based on the measurement result of the temperature sensor. Thereby, temperature control accuracy can be improved.

In addition, the drive device is a moving magnet type linear motor, and a medium for controlling the temperature of the stator in a direction almost opposite to the direction in which the medium flows at least part of the interior and surface of the partition member. May be flushed. As a result, the momentum of the medium is reduced as a whole, and the driving performance such as the control accuracy of the speed of the sample stage is improved.
Further, an actuator (38A to 38C) that moves the sample stage relative to the mover may be further provided, and the medium may also serve as a medium for controlling the temperature of the actuator. This eliminates the need to newly route the medium.

  Next, an exposure apparatus according to the present invention irradiates a first object (R) with an exposure beam and exposes the second object (W) through the first object with the exposure beam. In order to move at least one of the object and the second object, any stage device of the present invention is used. According to the exposure apparatus of the present invention, by applying the stage apparatus of the present invention, the thermal expansion of the sample stage and the first object or the second object thereon is suppressed, so that the exposure accuracy such as the overlay accuracy is improved. .

According to the present invention, a part of the sample stage, the partition member, or the plate member is subjected to low emissivity treatment, or the partition member is formed of a material having high thermal conductivity, or the temperature is adjusted along the partition member. Therefore, heat such as radiant heat generated by a heat source such as a drive mechanism is hardly transmitted to the sample stage. Therefore, the influence of heat from the heat source can be reduced with a simple configuration.
Further, in the present invention, when the medium for controlling the temperature of the stator is flowed in the direction almost opposite to the direction in which the medium flows along the partition member, the driving performance of the sample stage as the movable part is reduced. Can be suppressed.

A preferred first embodiment of the present invention will be described below with reference to FIGS.
FIG. 1 shows a schematic configuration of an exposure apparatus 10 of this example, and the exposure apparatus 10 is a scanning exposure type projection exposure apparatus having a step-and-scan method. In FIG. 1, an exposure apparatus 10 includes an illumination unit ILU, a reticle stage RST that holds a reticle R as a first object (mask), a projection optical system PL, and a driving device for a wafer W as an object or a second object (substrate). And a main control device 20 including a computer for controlling and controlling the entire apparatus. Hereinafter, in FIG. 1, the Z-axis is taken along the optical axis AX of the projection optical system PL, and in a plane perpendicular to the Z-axis (in this example, substantially coincides with the horizontal plane), it is parallel to the paper surface of FIG. The description will be made by taking the X axis in the direction and the Y axis in the direction perpendicular to the paper surface of FIG. In this example, the scanning direction of reticle R and wafer W during scanning exposure is a direction along the Y axis (Y direction).

First, the illumination unit ILU is connected to an exposure light source (not shown) via a light transmission optical system (route optical system) (not shown). As the exposure light source, a far-ultraviolet light source that outputs pulse light in a substantially far-ultraviolet region such as a KrF excimer laser (output wavelength 248 nm) or an ArF excimer laser (output wavelength 193 nm) is used. As an exposure light source, a laser light source that generates vacuum ultraviolet light, such as an F ₂ laser (output wavelength 157 nm), a harmonic generation light source of a YAG laser, a harmonic generation device of a solid laser (semiconductor laser, etc.), or a mercury lamp ( i-line etc.) can also be used. The illumination unit ILU includes an illumination system housing, a variable ND filter arranged in a predetermined positional relationship within the illumination system housing, an illuminance uniformizing optical system including an optical integrator, a relay lens, a reticle blind, and a condenser lens (whichever And an illumination optical system (not shown). As the optical integrator, for example, a fly-eye lens, an internal reflection type integrator (such as a rod integrator), or a diffractive optical element is used. The optical axis of the illumination optical system coincides with the optical axis AX of the projection optical system PL on the reticle R. An optical system configuration similar to the illumination optical system is disclosed in, for example, Japanese Patent Laid-Open No. 6-349701. The illumination unit ILU illuminates the slit-like illumination area IAR on the lower surface (reticle surface) of the reticle R on which a circuit pattern or the like is drawn with a uniform illuminance distribution by the exposure light IL as an exposure beam. The illumination area IAR is an elongated area in the direction (X direction) along the X axis defined by the reticle blind.

  Next, the reticle R is stably held on the reticle stage RST, for example, by vacuum suction or the like. Reticle stage RST is placed on a guide surface on a reticle base (not shown) in a non-contact state via an air bearing. The reticle stage RST can be driven on the guide surface by the reticle stage drive unit 22 at a scanning speed specified in the Y direction, which is the scanning direction, and is synchronized within an XY plane perpendicular to the optical axis AX, for example. A very small amount of driving is possible to correct the error. The reticle stage drive unit 22 is a mechanism including drive devices such as a linear motor and a voice coil motor, but is shown as a simple block in FIG. 1 for convenience of illustration.

  The position of the reticle stage RST in the moving plane (the position in the X direction and the Y direction) is a moving mirror 15 fixed to the reticle stage RST and a laser interferometer (hereinafter referred to as “reticle interference”) arranged to face the moving mirror 15. For example, it is always detected with a resolution of about 0.1 to 1 nm. Actually, a movable mirror having a reflecting surface orthogonal to the Y-axis and a moving mirror having a reflecting surface orthogonal to the X-axis are provided on the reticle stage RST, and a Y-axis reticle corresponding to these moving mirrors is provided. An interferometer and an X-axis reticle interferometer are provided. In FIG. 1, these are typically shown as a movable mirror 15 and a reticle interferometer 16. For example, the end surface of the reticle stage RST may be mirror-finished to form a reflecting surface (corresponding to the reflecting surface of the movable mirror 15). Further, at least one corner cube type mirror (retro reflector) may be used instead of the movable mirror used for detecting the position of the reticle stage RST in the scanning direction (Y direction in this example). One of the Y-axis reticle interferometer and the X-axis reticle interferometer, for example, the Y-axis reticle interferometer, is a two-axis interferometer having two measurement axes separated in the X direction. In addition to the position of the reticle stage RST in the Y direction, the rotation angle (yawing amount) in the θz direction (rotation direction about the Z axis) can be measured based on the measurement value of the reticle interferometer. A reticle stage system is constituted by reticle stage RST, reticle base (not shown), movable mirror 15, reticle interferometer 16, and reticle stage drive unit 22.

  In addition to the reticle interferometer 16, a laser beam is irradiated to a reflective surface provided on the lower surface of the reticle stage RST and a reflective surface installed on a gantry (not shown) on which the projection optical system PL is placed, A Z-axis reticle interferometer (not shown) for detecting the relative positional relationship of the reticle stage RST with respect to the optical axis direction (Z direction) of the projection optical system PL may be provided. At this time, the relative positional relationship in the Z direction is detected at each of a plurality of points in the XY plane, and in addition to the positional information in the Z direction for the reticle stage RST, the tilt information with respect to the XY plane (that is, the rotation amount around the X axis and the Y axis) You may make it obtain | require the rotation amount of at least one).

  Position information (including the yawing amount) of reticle stage RST from reticle interferometer 16 is supplied to main controller 20. Main controller 20 controls the position and speed of reticle stage RST via reticle stage drive unit 22 based on position information of reticle stage RST, position information of wafer stage WST, which will be described later, and alignment information of reticle R. .

  In addition, projection optical system PL is arranged below reticle stage RST in FIG. As projection optical system PL, for example, a birefringent optical system having a predetermined reduction magnification (for example, 1/5 or 1/4) is used. When the illumination area IAR is illuminated by the exposure light IL from the illumination unit ILU, a reduced image (partial inverted image) of the pattern of the reticle R in the illumination area IAR is one shot area of the wafer W via the projection optical system PL. The projected image is projected onto the upper exposure area IA, and the reduced image is transferred to the resist layer on the surface of the wafer W. The wafer W as the object or the second object is a disk-shaped substrate having a diameter of about 200 to 300 mm, such as a semiconductor (silicon or the like) or SOI (silicon on insulator). A catadioptric system or the like can also be used as the projection optical system PL.

  Next, the wafer stage system 50 includes a stage base 40 supported substantially horizontally on the floor F (or a base plate or a frame caster) via three or four vibration isolation units 26, and the stage base 40. Is provided with a wafer stage WST as a stage disposed above the wafer stage, and a wafer stage driving unit 24 for driving the wafer stage WST. Each anti-vibration unit 26 insulates the micro vibration transmitted from the floor surface F to the stage base 40 at the micro G level. As these vibration isolation units 26, so-called active vibration isolation devices that actively suppress the vibration of the stage base 40 based on the output of a vibration sensor such as a semiconductor accelerometer fixed at a predetermined position of the stage base 40 are used. Of course it is possible.

  The surface (upper surface) in the + Z direction of the stage base 40 is processed so as to have a very high flatness, and serves as a guide surface 40a that is a movement reference surface of the wafer stage WST. Wafer stage WST is driven by wafer stage drive unit 24 below projection optical system PL in FIG. 1, holds wafer W, and moves two-dimensionally in the XY plane along guide surface 40a. Wafer stage WST includes wafer table WTB as a sample stage (or table) for holding wafer W, and wafer stage main body 30 that supports wafer table WTB from below via three Z / tilt drive mechanisms 38. And.

  Wafer W is sucked and held on the upper surface of wafer table WTB by vacuum suction (or electrostatic suction) through wafer holder 25. The three Z / tilt driving mechanisms 38 include actuators (for example, voice coil motors or EI core motors) that support the wafer table WTB on the wafer stage main body 30, and the wafer table WTB. The micro drive is performed with three degrees of freedom in the Z direction, θx direction (rotation direction around the X axis), and θy direction (rotation direction around the Y axis).

  A movable mirror 21 that reflects a laser beam from an externally installed laser interferometer (hereinafter referred to as “wafer interferometer”) 23 is fixed to the side surface of wafer table WTB, and wafer table WTB is fixed by wafer interferometer 23. Are always detected with a resolution of about 0.1 to 1 nm, for example, and the rotation amounts of the wafer table WTB in the θx direction, θy direction, and θz direction are always detected with a resolution corresponding to the position resolution. Has been detected. Actually, as shown in FIG. 2A, a movable mirror 21X having a reflecting surface orthogonal to the X axis is provided on the upper surface of wafer table WTB near the end in + X direction. A movable mirror 21Y having a reflecting surface orthogonal to the Y axis is provided near the portion. Correspondingly, an X-axis wafer interferometer and a Y-axis wafer interferometer are provided for measuring the positions of the wafer table WTB in the X and Y directions by irradiating the movable mirrors 21X and 21Y with laser light, respectively. It has been. In this example, the X-axis and Y-axis wafer interferometers are multi-axis interferometers each having a plurality of measurement axes, and in addition to the rotation amount (yawing amount) of the wafer table WTB in the θz direction, It is also possible to detect the pitching amount) and the rotation amount in the θy direction (rolling amount). As described above, a plurality of wafer interferometers and movable mirrors are provided, but in FIG. 1, these are typically shown as movable mirror 21 and wafer interferometer 23.

  For example, the end surface of wafer table WTB may be mirror-finished to form a reflecting surface (corresponding to the reflecting surface of movable mirrors 21X and 21Y). Further, the projection optical system PL is irradiated with a laser beam on a reflection surface installed on a gantry (not shown) on which the projection optical system PL is placed via a reflection surface installed on the wafer table WTB with an inclination of 45 °. A wafer interferometer that detects relative position information of the wafer table WTB in the optical axis direction (Z direction) may be provided. At this time, the relative positional relationship in the Z direction may be detected at a plurality of points in the XY plane, and the tilt information with respect to the XY plane may be obtained in addition to the positional information in the Z direction for wafer table WTB.

  The position information (or speed information) of wafer table WTB measured by wafer interferometer 23 is sent to main controller 20, where the position information (or speed information), position information of reticle stage RST, and Based on the alignment information of the wafer W, the wafer stage is passed through linear motors 36X, 36Y1, 36Y2 constituting the wafer stage drive unit 24 (the configuration of the wafer stage drive unit 24 including these linear motors will be described later). Control the position and speed of the WST.

In FIG. 1, a main controller 20 is configured to include a so-called computer comprising a CPU (Central Processing Unit), ROM, RAM, and the like, and controls the overall operation of the apparatus. The main controller 20 controls, for example, synchronous scanning of the reticle R and the wafer W, stepping of the wafer W, and the like so that the exposure operation is performed accurately.
Here, an exposure operation when the pattern of the reticle R is sequentially transferred to each shot area on the wafer W will be briefly described. As a premise, reticle alignment system (not shown), reference mark plate (not shown) on wafer table WTB, and reticle alignment using wafer alignment system (not shown), baseline measurement of wafer alignment system, and wafer alignment (for example, It is assumed that preparatory work such as EGA wafer alignment) has been completed.

  First, main controller 20 starts relative scanning in the Y direction between reticle R and wafer W, that is, reticle stage RST and wafer stage WST. When both stages RST and WST reach their respective target scanning speeds and reach a constant speed synchronization state, the pattern area of the reticle R starts to be illuminated by the exposure light IL from the illumination unit ILU, and scanning exposure is started. The relative scanning is performed by the main controller 20 controlling the reticle stage driving unit 22 and the wafer stage driving unit 24 while monitoring the measurement values of the wafer interferometer 23 and the reticle interferometer 16 described above.

  Main controller 20 determines that, during the above-described scanning exposure, the movement speed Vr of reticle stage RST in the Y direction and the movement speed Vw of wafer stage WST in the Y direction are the projection magnifications (1/4 times, Synchronous control is performed so as to maintain a speed ratio corresponding to 1/5 times. Then, the pattern area of the reticle R is sequentially illuminated with the exposure light IL, and the illumination of the entire pattern area is completed, thereby completing the scanning exposure of the first shot area on the wafer W. Thereby, the pattern of the reticle R is reduced and transferred to the first shot area via the projection optical system PL.

  Next, main controller 20 causes wafer stage WST to move stepwise in the X and Y directions via wafer stage drive unit 24, and starts a scanning start position (acceleration start) for exposure of the second shot area on wafer W. Position). Then, the operation of each unit is controlled by the main controller 20 in the same manner as described above, and scanning exposure is performed on the second shot region on the wafer W. In this way, the scanning exposure of the shot area on the wafer W and the stepping operation between shots are repeatedly performed, and the pattern of the reticle R is sequentially transferred to all the exposure target shots on the wafer W. When pattern transfer to all exposure target shot areas on the wafer W is completed, the wafer W is replaced with the next wafer, and the alignment and exposure operations are repeated in the same manner.

  Next, the configuration and operation of the wafer stage system 50 of this example will be described in detail. In the wafer stage system 50, for example, as shown in FIG. 2B, the wafer stage main body 30 includes a rectangular plate-shaped bottom surface member 30C and a pair of Y-direction both ends fixed to the top surface of the bottom surface member 30C. Supporting members 30B1 and 30B2, and a top plate 30A supported in parallel with the upper surface of the bottom surface member 30C by these supporting members 30B1 and 30B2. The top plate 30A (top plate) corresponds to a flat partition member. In FIG. 1, the bottom surface member 30 </ b> C is arranged to face the guide surface 40 a on the stage base 40 described above. As shown in FIG. 2B, the top plate 30A is formed of a rectangular plate-like member, and a wafer table WTB is disposed above the top plate 30A via a Z / tilt drive mechanism 38 including a voice coil motor and the like. Is mounted (see FIG. 1). Further, as shown in FIG. 2B, a movable element 32X constituting an X-axis linear motor 36X described later is fixed to the lower surface of the top plate 30A.

  Further, the bottom surface member 30C is formed of a flat plate member having substantially the same size as the top plate 30A, and the bottom surface (lower surface) of the bottom surface member 30C is as shown in FIGS. 3 (A) and 3 (B). In addition, for example, four vacuum preload type gas static pressure bearings (hereinafter simply referred to as “gas static pressure bearings”) 102 are provided. Although not shown in the drawings, these gas static pressure bearings 102 are formed around a jet port for jetting pressurized gas (for example, air) at the center thereof, and around the jet port. And a communicating groove.

Here, in the case where a light beam in a wavelength region called vacuum ultraviolet belonging to a wavelength range of 190 nm to 120 nm such as F ₂ laser light is used as exposure light (illumination light for exposure) IL, oxygen, water vapor, hydrocarbon gas, Alternatively, since absorption by organic substances (hereinafter simply referred to as “impurities”) is extremely large, in order to reduce the concentration of these impurities in the space on the optical path through which the exposure light IL passes to a concentration of several ppm or less, It is necessary to replace (purge) the gas in the space with an inert gas such as nitrogen or helium that has little absorption. Also in this example, when F ₂ laser light or the like is used as the exposure light IL, such gas replacement is performed.

  In this example, the static pressure (so-called gap pressure) between the bearing surface of the pressurized gas ejected from the bearing surfaces of the four gas static pressure bearings 102 toward the guide surface 40a and the guide surface 40a, and the wafer Wafer stage WST is supported on guide surface 40a on stage base 40 in a non-contact manner with a clearance of about several μm due to the balance between the weight of the entire stage WST and the vacuum preload.

  Next, as shown in FIG. 1, wafer stage drive unit 24 includes an X-axis linear motor 36X that drives wafer stage WST in the X direction, which is a non-scanning direction orthogonal to the scanning direction (Y direction), and wafer stage WST. Is provided with a pair of Y-axis linear motors 36Y1 and 36Y2 that are driven integrally with the X-axis linear motor 36X in the Y direction that is the scanning direction. An X-axis linear motor 36X as a driving device is fixed to an X-axis linear guide 34X as a stator whose longitudinal direction is the X direction, and a wafer stage body 30 that moves in the X direction along the X-axis linear guide 34X. X mover 32X.

  As shown in FIG. 2 (A), the X-axis linear guide 34X has an X direction as a longitudinal direction, a YZ cross section having a substantially H-shaped guide member 42, and an electric machine disposed above the guide member 42 and extending in the X direction. A child unit 60 and the like are provided. More specifically, the one end surface and the other end surface in the Y direction of the guide member 42 are respectively a first guide surface 62a and a second guide surface 62b that are parallel to the XZ plane and have good flatness. The guide member 42 includes first and second guide portions 43A and 43B having a rectangular cross section in which first and second guide surfaces 62a and 62b are respectively formed, and having an upper end surface and a lower end surface parallel to the XY plane. The third guide part 43A is composed of three parts, a flat rim part 43C as a connecting part that connects the second guide parts 43A and 43B. In this case, the rim portion 43C is parallel to the XY plane, that is, the aforementioned bottom surface member 30C. In this example, the three parts of the first and second guide parts 43A and 43B and the rim part 43C are integrally formed, but they may be integrated after being formed by separate members.

  3A is a cross-sectional view of the guide member 42 and the armature unit 60 shown in FIG. 2A, and FIG. 3B is a cross-sectional view taken along line AA of FIG. As can be seen from FIG. 3 (A), the YZ cross section of the guide member 42 has a vertically and laterally symmetrical shape. For this reason, the position in the Z direction of the center of rigidity is the neutral plane LL (bending moment). The surface that does not expand or contract when receiving.

  As shown in FIG. 2A, the armature unit 60 includes a coil plate having an H-shaped YZ cross section similar to that of the guide member 42 and extending in the X direction, and an inside (or outside) of the coil plate. ) At a predetermined interval (predetermined pitch) along the X direction. The armature unit 60 can also be regarded as a stator. The armature unit 60 is disposed in parallel above the rim portion 43 </ b> C of the guide member 42. Further, the armature unit 60 has a pair of spacer members 441 and 442 (one pair on the + X direction side in FIG. 2A) in which one end and the other end in the longitudinal direction are provided on the upper surface of the rim portion 43C. The spacer members are respectively supported by (not shown). That is, a predetermined space is formed between the upper surface of the rim portion 43C and the armature unit 60 except for both ends in the longitudinal direction.

  Further, as shown in FIG. 2B, the X mover 32X (mover connected to the top plate 30A) is a rectangular cross section fixed to the lower surface of the top plate 30A constituting the wafer stage main body 30 described above. A mover yoke (magnet plate) 48 that extends in the X direction in a frame shape, and N-pole permanent magnets 46N alternately arranged at predetermined intervals along the X direction on the upper and lower opposing surfaces on the inner surface side of the mover yoke 48 A plurality of field magnets composed of S pole permanent magnets 46S are provided. In this case, as apparent from the cross-sectional view of FIG. 3B, the polarities of the field magnets adjacent to each other are opposite to each other, and the polarities of the field magnets facing each other are also opposite to each other. Yes. For this reason, an alternating magnetic field is formed in the internal space of the mover yoke 48 along the X direction.

  In this case, as can be seen from FIGS. 3 (A) and 3 (B), field magnets (46N, 46S) are inserted in the upper and lower spaces in the central portion of the armature unit 60 in the Y direction. The wafer stage main body 30 and the X-axis linear guide 34X are incorporated in the apparatus with the bottom wall of the mover yoke 48 inserted in the space formed between the guide member 42 and the above-described space. For this reason, the X mover 32X has a structure that can freely move in the X direction. The wafer stage WST is moved along the X-axis linear guide 34X in the X direction by electromagnetic force generated by electromagnetic interaction between the X mover 32X and the X-axis linear guide 34X (more specifically, the armature unit 60). Driven by. That is, the X mover 32X and the X axis linear guide 34X (more specifically, the armature unit 60) constitute a moving magnet type electromagnetic force drive type X axis linear motor 36X, and this X axis linear motor 36X. Thus, a first drive system for driving wafer stage WST in the X direction (first axis direction) is configured.

In the moving magnet system, since the X mover 32X including the field magnet hardly generates heat, the amount of heat generated on the bottom surface of the top plate 30A of this example is smaller than that in the moving coil system. Therefore, the temperature rise of wafer table WTB and wafer W above top plate 30A is small, and the positional relationship between wafer W and movable mirrors 21X and 21Y is maintained relatively stably. However, also in this example, heat is generated in the coil unit in the armature unit 60 (stator) by driving, and the radiant heat heats the top plate 30A, and the radiant heat from the top plate 30A becomes the wafer table WTB. Is irradiated. For this reason, the temperature of wafer table WTB and wafer W gradually rises, and there is a possibility that the positional relationship between wafer W and movable mirrors 21X and 21Y will gradually shift. As a countermeasure, in this example, as shown in FIG. 3A, in order to reflect the radiant heat from the coil unit of the armature unit 60, the bottom surface of the wafer table WTB as the sample table (Z / tilt drive mechanism 38). The reflection film 71 is formed as a coating having a high reflectance as a low emissivity treatment. In this case, if the top plate 30A is made of, for example, alumina (Al ₂ O ₃ ) or a ceramic having a low expansion coefficient, a nickel film deposited by metal plating may be used as the reflective film 71. it can.

  Thereby, in this example, since the radiant heat from the coil unit of the armature unit 60 is almost reflected by the reflection film 71 of the wafer table WTB, the temperatures of the wafer table WTB and the wafer W are stably maintained. Accordingly, since the positional relationship between the wafer W and the movable mirrors 21X and 21Y is also stably maintained, the position of the wafer table WTB (wafer W) can always be measured with high accuracy, and the overlay accuracy and resolution after exposure can be measured. The exposure accuracy such as the above is also maintained high. In addition, as a material of the reflective film 71, metals other than nickel, such as aluminum, may be used. Thus, when the reflective film 71 is metal plating, in order to prevent stress deformation of the wafer table WTB due to the bimetallic effect, it is desirable to provide slits in the reflective film 71 as a deformation preventing portion at predetermined intervals.

  In addition, as the reflective film 71, a white paint by painting can also be used. Furthermore, a radiant heat blocking member such as a thin white paint may be formed on the surface of the coil unit of the armature unit 60. Note that the color of the coating is not limited to white, and other colors (for example, silver) may be used as long as low emissivity can be obtained. A carbon member may be used. For example, a plate-like carbon member may be disposed between wafer table WTB and the coil unit of armature unit 60.

  Instead of depositing the reflective film 71, an aluminum reflector or the like may be disposed on the bottom surface of the wafer table WTB. Further, the bottom surface of wafer table WTB may be polished so that the polished surface has a desired low emissivity. In this case, the polishing process is a low emissivity process. Furthermore, a plate-like member may be arranged between the top plate 30A and the wafer table WTB, and the reflective film 71 may be formed as a low emissivity treatment on at least a part of the plate-like member. The reflection film 71 may be a coating film by metal plating or painting as described above. Moreover, you may make it perform a low emissivity process by grind | polishing a plate-shaped member.

  Furthermore, instead of providing the reflective film 71 or in combination with the reflective film 71, the top plate 30A as the partition member is made of a material having a high thermal conductivity, specifically a thermal conductivity of 50 W / (m · K). You may form from the above material. As described above, materials having a thermal conductivity k (W / (m · K)) of 50 W / (m · K) or more include aluminum (k = 236 at 0 ° C.), brass (k = 236 at 0 ° C.). ), Silicon carbide (SiC) -based ceramics (k at 0 ° C. is approximately 65), and composite materials of silicon, silicon carbide and aluminum (k at 0 ° C. is approximately 200). By using the top plate 30A having a high thermal conductivity in this manner, the armature unit 60 can be compared with the case of using the top plate 30A made of alumina (k at 0 ° C. is approximately 20) as in the conventional case. Since the heat generated in the above is diffused by the top plate 30A, it is not transmitted to the wafer table WTB. As a result, the temperature rise of wafer table WTB is reduced.

Further, in order to cool the coil unit in the armature unit 60 in combination with a measure for forming the reflective film 71 or forming the top plate 30A from a material having high thermal conductivity, it is arranged in the armature unit 60. A coolant (medium) such as cooling water may flow through the pipe. Thereby, the temperature rise of wafer table WTB and wafer W can be further suppressed.
Next, as shown in FIG. 2A, the Y movable element 32Y2 is fixed to one end (the end in the + X direction) in the longitudinal direction of the X-axis linear guide 34X. The Y mover 32Y2 has a cross-sectional shape, and an armature coil (not shown) is arranged in the Y direction at a predetermined interval (predetermined pitch) inside (or outside). Although not shown in FIG. 2 (A) and the like, the other end in the longitudinal direction of the X-axis linear guide 34X (the end in the −X direction) is movable Y configured similarly to the Y mover 32Y2. The child 32Y1 is fixed (see FIG. 1).

  As shown in FIG. 1, the one Y mover 32Y1 is inserted into a Y-axis linear guide 34Y1 having a U-shaped XZ cross section. On the pair of opposing surfaces (upper and lower opposing surfaces) inside the Y-axis linear guide 34Y1, a plurality of field magnets (not shown) are arranged at predetermined intervals along the Y direction, like the above-described X mover 32X. . The Y-axis linear guide 34Y1 is held in the vicinity of both ends in the longitudinal direction by two support members 64 fixed on the floor surface F on the −X direction side of the stage base 40. As described above, in this example, the Y movable element 32Y1 and the Y axis linear guide 34Y1 constitute the Y axis linear motor 36Y1 that is a moving coil type electromagnetic force drive type linear motor.

  The other Y-axis linear motor 36Y2 has the same configuration as the Y-axis linear motor 36Y1. That is, the Y-axis linear motor 36Y2 is inserted into the Y-axis linear guide 34Y2 and the Y-axis linear guide 34Y2 extending in the Y direction above the floor F on the + X direction side of the stage base 40. Y movable element 32Y2. The Y-axis linear guide 34Y2 is also held in the vicinity of both ends in the longitudinal direction by the two support members 66. Also in this case, a Y-axis linear motor 36Y2 which is a moving coil type electromagnetic force drive type linear motor is constituted by the Y mover 32Y2 and the Y-axis linear guide 34Y2.

  As shown in FIG. 3A, the inner surface of one support member 30B1 constituting the stage main body 30 is opposed to the first guide surface 62a of the guide member 42 as a first static gas pressure bearing device. The air bearing mechanism 52A is provided. Similarly, an air bearing mechanism 52B as a second static gas pressure bearing device is provided on the inner surface of the other support member 30B1 so as to face the second guide surface 62b of the guide member 42. In this example, pressurized air as pressurized gas is jetted from the bearing surfaces of the air bearing mechanisms 52A and 52B toward the first and second guide surfaces 62a and 62b, respectively. The guide is caused by the static pressure of the pressurized air (so-called clearance pressure) in the gap (bearing gap) between the first and second guide surfaces 62a and 62b facing the bearing surfaces of the air bearing mechanisms 52A and 52B. A clearance of about several μm is formed between the first guide surface 62a of the member 42 and the bearing surface of the air bearing mechanism 52A, and between the second guide surface 62b and the bearing surface of the air bearing mechanism 52B. It has become. That is, the non-contact state between the guide member 42 and the stage main body 30 is maintained in this way.

  As described above, since the Y movers 32Y1 and 32Y2 are provided at both ends in the Y direction of the X axis linear guide 34X, the Y axis linear motors 36Y1 and 36Y2 are driven in the Y direction by the driving force (Lorentz force). ) Is driven, the X-axis linear guide 34X is driven in the Y direction. As described above, the non-contact state between the guide member 42 and the stage main body 30 is maintained by the static pressure of the pressurized air. Thus, wafer stage WST is driven in the Y direction together with X-axis linear guide 34X. That is, in this example, a second drive system is configured to drive wafer stage WST in the Y direction (second axis direction) by Y axis linear motors 36Y1 and 36Y2.

  In this example, as shown in FIG. 3A, the centers PA and PB of the pressure receiving regions of the first and second guide surfaces 62a and 62b that receive the pressure of the pressurized air ejected from the air bearing mechanisms 52A and 52B, respectively. The position in the Z direction coincides with the neutral plane LL (rigid center) of the guide member 42 described above. For this reason, for some reason, the force exerted on the first guide surface 62a by the pressurized air ejected from the air bearing mechanism 52A and the pressurized air ejected from the air bearing mechanism 52B against the second guide surface 62b. Even when the balance with the applied force is lost, the guide member 42 only moves slightly in parallel to the + Y side or the −Y side with respect to the wafer stage main body 30, and the guide member 42 42 is not deformed. Therefore, in this example, it is possible to almost certainly avoid the possibility that rolling occurs in the wafer stage WST due to the deformation of the guide member 42 or the guide member 42 and the wafer stage main body 30 come into contact with each other. it can.

  Further, as shown in FIG. 3A, since the position of the center of gravity G of wafer stage WST is set on the drive axis when wafer stage WST is driven in the X direction, wafer stage WST is moved in the X direction. When driving, an unnecessary rotational moment does not act. Therefore, it is possible to effectively suppress the occurrence of rolling (rotation around the Y axis), yawing (rotation around the Z axis) and the like on wafer stage WST.

  Even if the rigidity of the air bearing mechanisms 52A and 52B as the bearing device is increased, the guide member 42 is hardly deformed, so that the guide member 42 and the wafer stage WST are not in contact with each other. Both of them can be integrally driven by the shaft linear motors 36Y1 and 36Y2. In this case, by varying the driving force generated by Y-axis linear motors 36Y1 and 36Y2, yawing (rotation about the Z-axis) of wafer stage WST can be accurately controlled via guide member 42. Yes.

Next, a second embodiment of the present invention will be described with reference to FIG. 4, portions corresponding to those in FIGS. 3A and 3B are denoted by the same reference numerals, and detailed description thereof is omitted.
4B is a front view showing the main part of the wafer stage system of the exposure apparatus of this example, FIG. 4A is a cross-sectional view taken along the line AA in FIG. 4B, and FIG. In this example, the three Z / tilt drive mechanisms 38 (see, for example, FIG. 1) in the first embodiment are individually shown as three Z / tilt drive mechanisms 38A, 38B, and 38C. As shown in FIG. 4B, a wafer table WTB (sample stage) is supported above the top plate 30A (partition member) via Z / tilt drive mechanisms 38A to 38C, and a wafer holder is mounted on the wafer table WTB. The wafer W (object) is sucked and held via 25.

  In this example, instead of providing the reflective film 71 on the bottom surface of the wafer table WTB as in the example of FIG. 3A, as shown in FIG. 4B, a Z / tilt drive mechanism 38A on the top surface of the top plate 30A is provided. A reflective film 73 as a high-reflectance coating (low emissivity treatment) is formed on the portion excluding the opening where 38C is moved up and down. The reflection film 73 is a film plated with a metal such as nickel, or a white paint, like the reflection film 71. As shown in FIG. 4A, rectangular wave-shaped slits 74A, 74B, 74C, 74D (deformation preventing portions) are formed in the reflective film 73 at substantially predetermined intervals in the Y direction. Thereby, stress deformation of the top plate 30A due to the bimetal effect is prevented. Other configurations are the same as those in the first embodiment.

  According to this example, the radiant heat from the coil unit (see FIG. 3A) of the armature unit 60 (stator) on the bottom surface side of the top plate 30A is almost reflected by the reflection film 73 of the top plate 30A. Therefore, the temperatures of wafer table WTB and wafer W are maintained stably. Accordingly, since the positional relationship between the wafer W and the movable mirrors 21X and 21Y is also stably maintained, exposure accuracy such as overlay accuracy and resolution after exposure is also maintained high.

Next, a third embodiment of the present invention will be described with reference to FIGS. 5 and FIG. 6, parts corresponding to those in FIGS. 3A and 3B are denoted by the same reference numerals, and detailed description thereof is omitted.
FIG. 5 is a cross-sectional view showing the main part of the wafer stage system of the exposure apparatus of this example corresponding to FIG. 3B. In FIG. A flexible supply pipe 68A is connected to the direction side via a connection pipe 69A, and a flexible discharge pipe 68B is connected to the + X direction side via a connection pipe 69B. A pipe (not shown) for flowing a refrigerant (medium) is installed in the armature unit 60 so as to communicate the connecting pipes 69A and 69B. In this example, in order to suppress the temperature rise due to heat generation of the coil unit in the armature unit 60, the refrigerant supply device (not shown) moves from the supply pipe 68A side to the discharge pipe 68B side, that is, in the armature unit 60 in the + X direction. The refrigerant is supplied with a temperature-controlled refrigerant such as water or hydrofluoroether (HFE).

  Further, the top plate 30A1 (disposed at a position corresponding to the top plate 30A in FIG. 3B) as the partition member of the present example has flexibility via a connecting pipe 76 in the + X direction side. The supply pipe 75 is connected, and a flexible discharge pipe 82 is connected to the −X direction side via a connection pipe 81. Further, a connecting pipe 78 that connects the upper surface and the lower surface is provided on the side surface of the top plate 30A1. A pipe 77 for flowing a coolant (medium for adjusting the temperature of the top board 30A1) is fixed on the top board 30A1 so as to communicate with the connecting pipes 76 and 78. The connection pipes 78 and 81 are connected to the top board 30A1. It communicates via piping (refer to Drawing 6) for flowing the refrigerant arranged on the bottom side of board 30A1. In this example, in order to suppress the temperature rise of the top plate 30A1 due to radiant heat from the coil unit in the armature unit 60, the refrigerant supply device (not shown) moves from the supply pipe 75 side to the discharge pipe 82 side, that is, the armature. A temperature-controlled refrigerant such as water or hydrofluoroether is supplied in the −X direction opposite to the direction in which the refrigerant flows in the unit 60. Thus, wafer table WTB can be stably driven with substantially the same load (reaction) in both the + X direction and the −X direction.

  FIG. 6 is a plan view showing the top plate 30A1 of FIG. 5, and the three Z / tilt driving mechanisms 38A, 38B, and 38C of this example are also the three Z / tilt driving mechanisms 38 (see FIG. 1). In FIG. 6, a pipe 77 communicating with the connecting pipes 76 and 78 meanders so as to cover a portion corresponding to the upper side of the X-axis linear guide 34X (which stores the coil unit) of the top plate 30A1. Further, the connecting pipe 78 is connected in parallel through pipes 79A, 79B, and 79C, respectively, a pipe 80A that flows around a heat generating portion such as a voice coil motor of the first Z / tilt drive mechanism 38A, a second Z. The pipe 80B flows around the heat generating portion of the tilt drive mechanism 38B and the pipe 80C flows around the heat generating portion of the third Z / tilt drive mechanism 38C. These pipes 80A, 80B, and 80C communicate with the connecting pipe 81 via the pipe 74D in parallel. Further, the discharge pipe 82 is connected to the refrigerant storage unit 83, and the refrigerant that has flowed through the discharge pipe 82 is returned to the refrigerant storage unit 83. Then, the refrigerant taken out as necessary from the refrigerant storage unit 83 is supplied at a predetermined flow rate into the supply pipe 75 via the temperature control unit 84 and the discharge pump unit 85.

  Further, temperature sensors 91A and 91B for measuring the temperature of the refrigerant are arranged in the vicinity of the inlet of the refrigerant storage unit 83 and in the vicinity of the outlet of the discharge pump unit 85, respectively. Further, a temperature sensor (for example, a thermistor or a nickel temperature sensor) 87 for measuring the temperature of the wafer table WTB is installed on the back surface of the wafer table WTB (see FIG. 5), and these temperature sensors 87, 91A, 91B are used. Temperature measurement information is supplied to the control system 86. The control system 86 determines the set temperature of the refrigerant in the temperature control unit 84 and the flow rate of the refrigerant per unit time in the discharge pump unit 85 based on the temperature measurement information and the control information of the main controller 20 in FIG. Set.

  Instead of disposing temperature sensor 87 on wafer table WTB, temperature sensor 87 may be provided on the side surface of top plate 30A1, and the flow rate may be set based on the temperature of top plate 30A1. FIG. 6 shows a case where the temperature sensor 87 is provided on the top plate 30A1. In the case of FIG. 6, the temperature sensor 87 is embedded in the side surface of the top plate 30 </ b> A <b> 1 by the screw portion 88, and the temperature sensor 87 and the control system 86 are flexible signals through the inside of the screw portion 88. They are connected by a cable 90. At this time, a packing portion 89 is provided so as to seal the screw portion 88.

  In this example, the refrigerant supplied from the discharge pump unit 85 flows through the pipe 77 on the top plate 30A1 along the arrow A1, and then passes through the connecting pipe 78 to provide three flows corresponding to the Z / tilt driving mechanism. The pipes are divided into paths, merged after flowing through the pipes 80A to 80C around the heat generating portions of the Z / tilt drive mechanisms 38A to 38C, and reach the connecting pipe 81. Thereafter, the refrigerant is recovered from the connection pipe 81 through the exhaust pipe 82 to the refrigerant storage unit 83 along the arrow A2. At this time, the control system 86 sets the temperature of the refrigerant so that the temperature of the wafer table WTB measured by the temperature sensor 87 falls within a predetermined allowable range. Further, the flow rate of the refrigerant flowing in the pipe 77 is set so that the direction is opposite to the flow rate of the refrigerant flowing in the armature unit 60 of FIG. The other configuration is the same as that of the first embodiment.

  According to this example, even if there is radiant heat from the coil unit (see FIG. 3A) of the armature unit 60 (stator) on the bottom surface side of the top plate 30A1 in FIG. The temperature of top plate 30A1 is adjusted as appropriate based on the temperature of wafer table WTB (so that it hardly rises). As a result, the temperature of wafer table WTB and wafer W is maintained stably. Accordingly, since the positional relationship between the wafer W and the movable mirrors 21X and 21Y is also stably maintained, exposure accuracy such as overlay accuracy and resolution after exposure is also maintained high.

6 may be provided at a plurality of locations on wafer table WTB (or top plate 30A1). Since the temperature sensor 87 can be easily fixed to the side surface of the top plate 30A1, it can be easily fixed at a plurality of locations.
In FIG. 6, the refrigerant pipe 77 can be fixed to the bottom surface instead of the top surface of the top plate 30A1. Furthermore, the top plate 30A1 may be configured to attach two plates together, and the pipe 77 may be disposed between the two plates (inside the top plate 30A1).

  In the above-described embodiment, the present invention is applied to the wafer stage system. However, the present invention can also be applied to the reticle stage system of the exposure apparatus 10 in FIG. In this case, for example, in order to suppress thermal expansion of reticle stage RST (sample stage) and reticle R (object) thereon due to heat such as radiant heat from a driving device such as a linear motor (not shown in FIG. 1). It is conceivable to apply a highly reflective coating on the bottom surface or side surface of reticle stage RST. As another countermeasure, a partition member is disposed between the reticle stage RST and the heat generating portion of the driving device, and the material of the partition member is set to have high thermal conductivity, or at least a part thereof has high reflectivity. It is conceivable to apply a coating. Moreover, you may make it flow the refrigerant | coolant by which temperature control was carried out along a part of the partition member.

  In the case of manufacturing a semiconductor device using the exposure apparatus of the above embodiment, the semiconductor device has a step of designing a function / performance of the device, a step of manufacturing a reticle based on this step, and a wafer from a silicon material. And a step of exposing the reticle pattern onto the wafer by the projection exposure apparatus of the above-described embodiment, a device assembly step (including a dicing process, a bonding process, and a package process), an inspection step, and the like.

  In addition, the illumination optical system and projection optical system composed of a plurality of lenses are incorporated into the exposure apparatus main body for optical adjustment, and a reticle stage and wafer stage consisting of a large number of mechanical parts are attached to the exposure apparatus main body for wiring and piping. The exposure apparatus of the above-described embodiment can be manufactured by connecting and further performing general adjustment (electric adjustment, operation check, etc.). The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  The present invention can be applied not only to a stage system of a scanning exposure type exposure apparatus but also to a stage system of a batch exposure type exposure apparatus or a stage system such as a semiconductor inspection apparatus. The magnification of the projection optical system in these cases may be the same magnification or an enlargement magnification. Furthermore, the present invention can also be applied to a stage system of an exposure apparatus such as a proximity system that does not use a projection optical system. The present invention can also be applied to a stage system of an immersion type exposure apparatus disclosed in, for example, International Publication No. 99/49504 pamphlet. Further, as disclosed in, for example, International Publication Nos. 98/24115 and 98/40791 pamphlets, the wafer stage described above is used in order to perform the exposure operation and the alignment operation (mark detection operation) substantially in parallel. The present invention can also be applied to an exposure apparatus in which the system includes two wafer stages.

  In these cases, when a linear motor is used for the wafer stage system or the reticle stage system, the movable stage may be held by any method such as an air floating type using an air bearing or a magnetic floating type. The movable stage may be a type that moves along a guide, or may be a guideless type that does not provide a guide. Further, reaction force generated during acceleration / deceleration during step movement or scanning exposure of the wafer stage or reticle stage is, for example, U.S. Pat. No. 5,528,118 or U.S. Pat. As disclosed in Japanese Patent Laid-Open No. 8-33022), the frame member may be used to mechanically escape to the floor (ground). Or you may make it cancel those reaction forces by the counter balance system which applied the momentum conservation law.

  Note that the use of the exposure apparatus of the above embodiment is not limited to the exposure apparatus for manufacturing a semiconductor element, and for example, for a display apparatus such as a liquid crystal display element or a plasma display formed on a square glass plate. And an exposure apparatus for manufacturing various devices such as an imaging device (CCD or the like), a micromachine, a thin film magnetic head, or a DNA chip. Furthermore, the present invention can also be applied to an exposure process (exposure apparatus) when a reticle (photomask or the like) on which a reticle pattern of various devices is formed using a photolithography process.

  In addition, this invention is not limited to the above-mentioned embodiment, Of course, a various structure can be taken in the range which does not deviate from the summary of this invention.

  ADVANTAGE OF THE INVENTION According to this invention, the influence of the heat from a heat source with respect to a sample stand and the object hold | maintained at it can be reduced. Therefore, when the present invention is applied to an exposure apparatus, exposure accuracy such as overlay accuracy can be improved, and various devices can be mass-produced with high accuracy.

It is a figure which shows schematic structure of the exposure apparatus of the 1st Embodiment of this invention. (A) is a perspective view showing wafer stage WST and X-axis linear guide 34X in FIG. 1, and (B) is a perspective view showing wafer stage WST in FIG. FIG. 3A is a side view showing a part of wafer stage WST and X-axis linear guide 34X in FIG. 2A as a section, and FIG. 3B is a sectional view taken along line AA in FIG. (A) is a top view which shows the top plate 30A of the 2nd Embodiment of this invention, (B) is a front view which shows the principal part of the wafer stage system of the 2nd Embodiment. It is sectional drawing which shows the principal part of the wafer stage type | system | group of the 3rd Embodiment of this invention. It is a top view which shows top plate 30A1 of FIG. 5, and the supply apparatus of a refrigerant | coolant.

Explanation of symbols

R ... reticle, PL ... projection optical system, W ... wafer, WST ... wafer stage, WTB ... wafer table, 30A, 30A1 ... top plate 30, 32X ... X mover, 34X ... X-axis linear guide, 36X ... X-axis linear Motor, 60 ... armature unit, 71, 73 ... reflective film, 77 ... piping for refrigerant, 87 ... temperature sensor, 84 ... temperature controller

Claims (14)

In the stage device that moves the sample stage holding the object along the guide surface,
A stage apparatus, wherein a low emissivity process is performed on at least a part of the back surface of the mounting surface of the object on the sample stage.   2. The low emissivity treatment includes any one of a coating treatment made of a coated or metal-plated film provided on at least a part of the back surface, or a polishing treatment of the back surface. The stage apparatus described in 1.   The apparatus further comprises a drive unit that includes a mover connected to the sample stage and a stator arranged along the guide surface, and drives the sample stage along the guide surface. The stage apparatus according to 1 or 2. In the stage device that moves the sample stage holding the object along the guide surface,
A drive unit for driving the sample stage along the guide surface, including a mover coupled to the sample stage; and a stator disposed along the guide surface;
A flat partition member arranged to separate the mover and the sample stage;
A stage apparatus, wherein a low emissivity process is performed on at least a part of a surface of the partition member facing the sample stage. In the stage device that moves the sample stage holding the object along the guide surface,
A drive unit for driving the sample stage along the guide surface, including a mover coupled to the sample stage; and a stator disposed along the guide surface;
A flat partition member arranged to separate the mover and the sample stage;
A plate-like member disposed between the partition member and the sample stage;
A stage apparatus, wherein at least a part of the plate-like member is subjected to low emissivity processing.   The stage device according to claim 3, 4 or 5, wherein the driving device is a moving magnet type linear motor.   5. The stage apparatus according to claim 4, wherein the partition member includes a metal or ceramics, and the low emissivity process is a coating process for forming a metal film on at least a part of the opposing surfaces.   The stage apparatus according to any one of claims 1 to 7, wherein a deformation preventing portion is provided on the surface subjected to the low emissivity treatment. In the stage device that moves the sample stage holding the object along the guide surface,
A drive unit for driving the sample stage along the guide surface, including a mover coupled to the sample stage; and a stator disposed along the guide surface;
A flat partition member arranged to separate the mover and the sample stage;
A stage apparatus characterized in that the partition member is made of a material having a thermal conductivity of 50 W / (m · K) or more. In the stage device that moves the sample stage holding the object along the guide surface,
A drive unit for driving the sample stage along the guide surface, including a mover coupled to the sample stage; and a stator disposed along the guide surface;
A flat partition member arranged to separate the mover and the sample stage;
A stage apparatus, wherein a medium for adjusting the temperature of the partition member is caused to flow through a flow path provided in at least a part of the interior and surface of the partition member. A temperature sensor for measuring the temperature of the sample stage;
The stage apparatus according to claim 10, wherein the temperature of the medium is controlled based on a measurement result of the temperature sensor. The driving device is a moving magnet type linear motor,
The medium for controlling the temperature of the stator flows in at least a part of the inside and the surface of the partition member in a direction substantially opposite to the direction in which the medium flows. Stage device. An actuator for moving the sample stage relative to the mover;
The stage apparatus according to claim 10, wherein the medium also serves as a medium for controlling a temperature of the actuator. In an exposure apparatus that illuminates a first object with an exposure beam and exposes a second object through the first object with the exposure beam,
An exposure apparatus using the stage apparatus according to claim 1 to move at least one of the first object and the second object.

Images