JP2005099879A5 - - Google Patents

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JP2005099879A5
JP2005099879A5 JP2004375920A JP2004375920A JP2005099879A5 JP 2005099879 A5 JP2005099879 A5 JP 2005099879A5 JP 2004375920 A JP2004375920 A JP 2004375920A JP 2004375920 A JP2004375920 A JP 2004375920A JP 2005099879 A5 JP2005099879 A5 JP 2005099879A5
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pattern
phase shift
shift region
creation method
pattern layout
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JP3738267B2 (en
JP2005099879A (en
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Claims (10)

露光光に対して透過性を有する透過性基板上に形成された遮光膜領域と位相シフト領域とから構成されている孤立した遮光性パターンを備えたフォトマスクのパターンレイアウト作成方法であって、
前記遮光性パターンと対応するパターンレイアウトを作成する工程(a)と、
前記パターンレイアウトのうちから(0.8×λ/NA)×M(但し、λは露光光の波長であり、NAは露光機の縮小投影光学系の開口数であり、Mは該縮小投影光学系の倍率である)以下の幅L×Mを有するラインパターンを抽出する工程(b)と、
抽出された前記ラインパターンの内側に((0.8×λ/NA)−L)×M以下の幅W×M(但し、W≦L)を有する前記位相シフト領域と対応する第1の位相シフト領域を配置する工程(c)とを備えていることを特徴とするパターンレイアウト作成方法。
A method for creating a pattern layout of a photomask having an isolated light-shielding pattern composed of a light-shielding film region and a phase shift region formed on a transmissive substrate having transparency to exposure light,
A step (a) of creating a pattern layout corresponding to the light-shielding pattern;
Wherein among the pattern layout (0.8 × λ / NA) × M ( where, lambda is the wavelength of the exposure light, NA is the numerical aperture of a reduction projection optical system of an aligner, M is said reduced projection optical (B) extracting a line pattern having the following width L × M ( which is the magnification of the system ) ;
Inside of the extracted said line pattern, ((0.8 × λ / NA ) -L) × M or less the width W × M (where, W ≦ L) first corresponding to the phase shift region having a And a step (c) of arranging a phase shift region.
請求項1に記載のパターンレイアウト作成方法において、
0.5×(((0.8×λ/NA)−L)/2)≦W≦1.5×(((0.8×λ/NA)−L)/2)且つW≦Lであることを特徴とするパターンレイアウト作成方法。
In the pattern layout creation method according to claim 1,
0.5 × (((0.8 × λ / NA) −L) / 2) ≦ W ≦ 1.5 × (((0.8 × λ / NA) −L) / 2) and W ≦ L A pattern layout creating method characterized by being.
請求項1又は2に記載のパターンレイアウト作成方法において、
前記工程(b)は、前記パターンレイアウトのうちからパターン角部を抽出する工程を含み、
前記工程(c)は、抽出された前記パターン角部若しくはその内側に(0.5×λ/NA)×M四方以下の寸法を有する前記位相シフト領域と対応する第2の位相シフト領域を配置する工程を含むことを特徴とするパターンレイアウト作成方法。
In the pattern layout creation method according to claim 1 or 2,
The step (b) includes a step of extracting a pattern corner from the pattern layout,
In the step (c) , a second phase shift region corresponding to the phase shift region having a dimension of (0.5 × λ / NA) × M square or less is disposed in the extracted pattern corner or inside thereof. A pattern layout creating method comprising the step of:
請求項1〜3のいずれか1つに記載のパターンレイアウト作成方法において、In the pattern layout creation method according to any one of claims 1 to 3,
前記工程(b)は、前記パターンレイアウトのうちからパターン端部を抽出する工程を含み、The step (b) includes a step of extracting a pattern edge from the pattern layout,
前記工程(c)は、抽出された前記パターン端部若しくはその内側に(0.5×λ/NA)×M四方以下の寸法を有する前記位相シフト領域と対応する第3の位相シフト領域を配置する工程を含むことを特徴とするパターンレイアウト作成方法。In the step (c), a third phase shift region corresponding to the phase shift region having a dimension of (0.5 × λ / NA) × M square or less is disposed at the extracted pattern end or inside thereof. A pattern layout creating method comprising the step of:
請求項1〜4のいずれか1つに記載のパターンレイアウト作成方法において、In the pattern layout creation method according to any one of claims 1 to 4,
前記フォトマスクにおける前記遮光性パターンは、少なくとも、第1のライン幅を有する第1の遮光性パターン領域と、前記第1のライン幅よりも広い第2のライン幅を有する第2の遮光性パターン領域とを有し、The light shielding pattern in the photomask includes at least a first light shielding pattern region having a first line width and a second light shielding pattern having a second line width wider than the first line width. And having an area
前記第1の遮光性パターン領域には、前記位相シフト領域が前記遮光膜領域に囲まれて形成されており、In the first light shielding pattern region, the phase shift region is formed surrounded by the light shielding film region,
前記第2の遮光性パターン領域には、前記位相シフト領域が形成されていないことを特徴とするパターンレイアウト作成方法。The pattern layout creation method, wherein the phase shift region is not formed in the second light-shielding pattern region.
請求項1〜5のいずれか1つに記載のパターンレイアウト作成方法を用いたフォトマスクのマスク描画データ作成方法であって、
前記工程(c)の後に、試験露光又は露光シミュレーションの結果に基づいて前記第1の位相シフト領域の寸法を調整する工程(d)と、
前記工程(d)の後に、寸法調整された前記第1の位相シフト領域を有する前記パターンレイアウトに基づき、前記位相シフト領域と対応する位相シフト領域形成用データを出力する工程(e)とを備えていることを特徴とするマスク描画データ作成方法。
A photomask mask drawing data creation method using the pattern layout creation method according to claim 1,
After the step (c), a step (d) of adjusting the dimension of the first phase shift region based on the result of the test exposure or the exposure simulation ;
After the step (d), there is a step (e) of outputting phase shift region forming data corresponding to the phase shift region based on the pattern layout having the first phase shift region whose dimensions are adjusted. A mask drawing data creation method characterized by comprising:
請求項6に記載のマスク描画データ作成方法であって、The mask drawing data creation method according to claim 6,
前記工程(d)では、前記第1の位相シフト領域の寸法調整と共に、前記パターンレイアウトの外形寸法の寸法調整を行うことを特徴とするマスク描画データ作成方法。In the step (d), the mask drawing data creation method is characterized in that the dimension adjustment of the outer dimension of the pattern layout is performed together with the dimension adjustment of the first phase shift region.
請求項6又は7に記載のマスク描画データ作成方法であって、The mask drawing data creation method according to claim 6 or 7,
前記工程(e)では、寸法調整された前記第1の位相シフト領域を有する前記パターンレイアウトに基づき、前記遮光性パターンと対応する遮光性パターン形成用データを出力することを特徴とするマスク描画データ作成方法。In the step (e), mask drawing data, wherein data for forming a light shielding pattern corresponding to the light shielding pattern is output based on the pattern layout having the first phase shift region whose dimensions have been adjusted. How to make.
請求項6〜8のいずれか1つに記載のマスク描画データ作成方法であって、A mask drawing data creation method according to any one of claims 6 to 8,
前記工程(e)では、寸法調整された前記第1の位相シフト領域を有する前記パターンレイアウトに基づき、前記遮光膜領域と対応する遮光膜領域形成用データを出力することを特徴とするマスク描画データ作成方法。In the step (e), mask drawing data, wherein data for forming a light shielding film region corresponding to the light shielding film region is output based on the pattern layout having the first phase shift region whose dimensions have been adjusted. How to make.
請求項6〜9のいずれか1つに記載のマスク描画データ作成方法であって、
前記工程(d)は、前記フォトマスクを用いた露光によって形成されるパターンの幅が設計値よりも大きくなる部分と対応する前記第1の位相シフト領域の幅を縮小すると共に、前記フォトマスクを用いた露光によって形成されるパターンの幅が設計値よりも小さくなる部分と対応する前記第1の位相シフト領域の幅を拡大する工程を含むことを特徴とするマスク描画データ作成方法。
The mask drawing data creation method according to any one of claims 6 to 9,
In the step (d) , the width of the first phase shift region corresponding to the portion where the width of the pattern formed by exposure using the photomask is larger than the design value is reduced, and the photomask is A method of creating mask drawing data, comprising a step of expanding a width of the first phase shift region corresponding to a portion where a width of a pattern formed by exposure used is smaller than a design value.
JP2004375920A 1999-11-08 2004-12-27 Pattern layout creation method and mask drawing data creation method Expired - Fee Related JP3738267B2 (en)

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JP2004375920A JP3738267B2 (en) 1999-11-08 2004-12-27 Pattern layout creation method and mask drawing data creation method

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JP31675299 1999-11-08
JP2004375920A JP3738267B2 (en) 1999-11-08 2004-12-27 Pattern layout creation method and mask drawing data creation method

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JP2001536639A Division JP3708875B2 (en) 1999-11-08 2000-11-02 Photomask and method for producing the same

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JP2005099879A JP2005099879A (en) 2005-04-14
JP2005099879A5 true JP2005099879A5 (en) 2005-08-11
JP3738267B2 JP3738267B2 (en) 2006-01-25

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6379630B2 (en) * 2014-04-24 2018-08-29 大日本印刷株式会社 Large photomask
JP7383490B2 (en) * 2020-01-07 2023-11-20 株式会社エスケーエレクトロニクス photo mask

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