JP2005093813A - Method for manufacturing stencil mask for electron beam exposure, and exposure system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for matching an exposure pattern which is for exposure in a high-throughput electron beam exposure apparatus using a mask having a large-aperture pattern to other exposure patterns on the specimen, and to provide an exposure system. <P>SOLUTION: The exposure system has an electron beam exposure apparatus for projecting an electron beam to a stencil mask 30 for exposing a specimen 40 to a shaped electron beam 15, a pattern deformation measuring unit 65 for measuring the deformation of the other pattern projected to the specimen, and a stencil mask manufacturing unit 70 for manufacturing an electron beam exposure stencil mask 85 for use in the electron beam exposure apparatus. The stencil mask manufacturing unit 70 manufactures a stencil mask having an aperture pattern deformed in response to the deformation of the other pattern measured by the pattern deformation measuring unit 65. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a stencil mask for electron beam exposure, which is used in electron beam exposure in which an electron beam is irradiated onto a stencil mask having an opening pattern and an electron beam shaped according to the opening pattern is exposed to a sample, and so on. The present invention relates to an exposure system having an electron beam exposure apparatus and a stencil mask manufacturing apparatus.

In recent years, with the need for higher integration of semiconductor integrated circuits, further miniaturization of circuit patterns has been demanded. At present, the limits of miniaturization are mainly limited to exposure equipment. Currently, optical steppers are in common use, and electron beam exposure equipment has been developed as a new type of exposure equipment. Attention has been focused on a high-throughput electron beam proximity exposure apparatus that can be used for ultrafine processing. This type of electron beam proximity exposure apparatus uses a stencil mask having an opening pattern corresponding to the pattern to be exposed, and irradiates the sample with an electron beam shaped through the mask, thereby obtaining a large throughput. Therefore, it is necessary to increase the area of the opening pattern.
This system irradiates an electron beam onto a stencil mask that has an aperture pattern placed close to the sample and a projection method that reduces and irradiates the shaped electron beam through an electromagnetic lens through a stencil mask. There is a proximity method that exposes the same pattern as the opening pattern of the mask. The present invention is applicable if a mask having an opening pattern with a large area corresponding to the pattern to be exposed is used, but here, a case where a proximity exposure type electron beam exposure apparatus is used will be described as an example.

FIG. 1 is a diagram showing a basic configuration of an electron beam proximity exposure apparatus disclosed in US Pat. No. 5,831,272 (corresponding to Japanese Patent No. 2951947). The electron beam proximity exposure apparatus will be briefly described with reference to this figure. As shown in the figure, an electron gun 12 having an electron beam source 14 for generating an electron beam 15, a shaping aperture 16, and an irradiation lens 18 for converting the electron beam 15 into a parallel beam is disposed in an electron optical column (column) 6. A scanning unit 21 that includes a pair of main deflectors 22 and 24 and a pair of sub-deflectors 51 and 52, and that scans the electron beam parallel to the optical axis; and a mask 30 having an opening corresponding to the pattern to be exposed; A sample (semiconductor wafer) 40 having a resist layer 42 formed on the surface is also provided.
The mask 30 has a thin film portion 32 having an opening formed at the center in the thick outer edge portion 34, and the sample 40 is arranged so that the surface thereof is close to the mask 30. In this state, when an electron beam is irradiated perpendicularly to the mask, the resist layer 42 on the surface of the sample 40 is irradiated with the electron beam that has passed through the opening of the mask.

  The main deflectors 22 and 24 in the scanning means 21 control the deflection of the electron beam so that the electron beam 15 scans the entire surface of the mask 30 as shown in FIG. As a result, the mask pattern of the mask 30 is transferred to the resist layer 42 on the wafer 40 at the same magnification.

  The electron beam proximity exposure apparatus has a much higher throughput than the conventional electron beam proximity exposure apparatus, but the annular pattern must be divided into multiple stencil masks to form complementary patterns, and complex patterns are distorted. Therefore, it is necessary to form a pattern (also referred to herein as a complementary pattern) by dividing it into a plurality of stencil masks. Therefore, it is necessary to perform exposure using a plurality of stencil masks to expose one pattern, and there is a problem that the throughput is correspondingly lower than that of an optical exposure apparatus. In order to solve this problem, Japanese Patent Application Laid-Open No. 2002-373845 discloses that a plurality of complementary patterns are formed on a single mask substrate to improve throughput. However, there is a problem that it is difficult to manufacture a mask. is there.

  A semiconductor integrated circuit is formed by laminating several layers of conductor films, semiconductor films, or insulating films, and in most cases, it is formed of about 40 layers. Before the electron beam proximity exposure apparatus was proposed in US Pat. No. 5,831,272, among the patterns of each layer, a pattern suitable for exposure with the optical exposure apparatus was exposed with the optical exposure apparatus, and the electron beam proximity exposure apparatus was used. As a pattern suitable for exposure, a method called a “mix and match” exposure method in which exposure is performed by an electron beam proximity exposure apparatus is known.

  A projection lens that projects a pattern with an optical exposure apparatus has distortion. FIG. 3 is a diagram illustrating an example of distortion of the optical lens. FIG. 3A shows a lattice-like original pattern in the optical mask. There are two types of distortion of an optical lens: a barrel type and a pincushion type. When the barrel lens has a barrel type distortion aberration, the lattice pattern is as shown in FIG. When there is aberration, the lattice pattern is as shown in FIG.

  When the patterns of all layers are exposed using the same optical exposure apparatus, the same distortion aberration occurs in the patterns of all layers, so that problems such as misalignment due to distortion do not occur. However, when performing the mix-and-match exposure method, the pattern exposed by the distorted optical exposure apparatus and the pattern exposed by the electron beam proximity exposure apparatus are different. Misalignment occurs between the patterns. Of course, the distortion of the lens of the optical exposure device is made as small as possible, but it is difficult to make it completely zero, and when exposing a fine pattern that requires the use of an electron beam exposure device. Even a slight deviation lowers the exposure alignment margin, which is a big problem.

  The conventional mix-and-match exposure method is premised on the use of an electron beam proximity exposure apparatus in which the size of the pattern to be exposed is very small. In such an electron beam proximity exposure apparatus, a minute pattern at the time of exposure is used. It was possible to finely adjust the position of. Therefore, the position of the pattern exposed by the electron beam proximity exposure apparatus is adjusted to correspond to the distorted pattern exposed by the optical exposure apparatus so as not to cause a positional shift.

  An electron beam is also used when performing a mix-and-match exposure method by combining a projection-type or proximity-type high-throughput electron beam exposure apparatus that uses a mask having an aperture pattern with a large area as described above and an optical exposure apparatus. It is necessary to match the exposure pattern by the exposure apparatus with the distorted pattern exposed by the optical exposure apparatus.

The above-mentioned US Pat. No. 5,831,272 describes a method of adjusting an exposure position of a pattern by partially adjusting an incident angle of an electron beam to a mask in an electron beam proximity exposure apparatus. FIG. 4 is a diagram for explaining this pattern exposure position adjustment method. As described above, the electron beam 15 normally enters the mask 30 perpendicularly. When the electron beam 15 incident on a predetermined position of the mask 30 is deflected by −α by the sub deflector 51 and then deflected by 2α by the sub deflector 52, the electron beam 15 is deflected to a predetermined position on the mask. At an incident angle α, the exposure position on the wafer 40 is shifted. The shift amount δ in this case is expressed by the following equation: δ = G · tan α where the incident angle is α and the gap between the mask 30 and the wafer 40 is G.
It is represented by In this way, the exposure position can be changed by δ without changing the incident position on the mask 30, and the exposure position can be adjusted using this method.

  If the diameter of the electron beam 15 is small, the exposure position can be adjusted very minutely. However, in an actual exposure apparatus, the diameter of the electron beam 15 needs to be considerably increased. Limited to slow changes. Furthermore, since the gap G cannot be made too large, the adjustable positional deviation amount cannot be made too large. However, the exposure position can be adjusted by the method described with reference to FIG. Therefore, when performing the above mix-and-match exposure method, it is conceivable to use this method to match the exposure pattern by the electron beam exposure apparatus with the pattern exposed by the optical exposure apparatus.

  A semiconductor integrated circuit is formed by stacking multiple layers of conductor films, semiconductor films, or insulating films. However, the formed pattern may be a design pattern due to mask distortion or wafer distortion used in the exposure process. In some cases, the film is slightly distorted. Even in such a case, the pattern of each layer needs to correspond to the position of each other. Japanese Patent Laid-Open No. 2003-7596 measures a pattern that has already been exposed on a sample (wafer) and uses the exposure position adjustment method described in FIG. Discloses an exposure method for matching a measured pattern on a sample.

US Patent No. 5,831,272 (Overall) Japanese Patent No. 2951947 (Overall) Japanese Unexamined Patent Publication No. 2003-7596 (Overall) JP 2002-237450 A (paragraph 0016) JP 2002-373845 A (Overall) JP 2002-217100 A (Overall)

  The pattern of each layer is required to be aligned with each other, including the case of performing the mix and match exposure method, and the position of the exposure pattern by the electron beam exposure apparatus needs to match the position of the other exposure pattern. There is. When an electron beam proximity exposure apparatus is used, the method described with reference to FIG. 4 can be used to align the exposure pattern. However, the method shown in FIG. 4 needs to control the sub deflectors 51 and 52 when scanning the mask 30 with the electron beam 15, and there is a problem that the control becomes complicated and the throughput is reduced accordingly. 4 is limited by the diameter and interval G of the electron beam, and the diameter of the electron beam cannot be reduced too much, and the interval G cannot be increased too much. Therefore, there is a problem that it cannot be applied to a large misalignment or a large misalignment.

Further, in the projection type electron beam exposure apparatus, there is no good method for aligning the position of the exposure pattern by the electron beam exposure apparatus with the position of another exposure pattern, and it cannot be used for the mix-and-match exposure method. It cannot be used even when the pattern exposed above is distorted.
The present invention relates to a method for exposing a pattern exposed on a sample with a high-throughput electron beam exposure apparatus using a mask having a large area opening pattern, including the case where a mix-and-match exposure method is used. It is an object of the present invention to realize a new method for matching a pattern and an exposure system.

  In order to achieve the above object, the present invention provides a method and an exposure system for an electron beam exposure stencil mask according to the present invention that measures distortion of other patterns exposed to a sample and copes with the measured distortion of other patterns. A stencil mask having a distorted opening pattern is manufactured and used.

  That is, according to the method for manufacturing an electron beam exposure stencil mask of the present invention, an electron beam is applied to a stencil mask having an opening pattern by irradiating the sample with an electron beam shaped according to the opening pattern of the stencil mask. A method for manufacturing an electron beam exposure stencil mask for use in exposure, wherein the distortion of another pattern exposed to the sample is measured, and the opening pattern is distorted corresponding to the measured distortion of the other pattern The stencil mask is manufactured.

  The exposure system of the present invention includes an electron beam exposure apparatus that irradiates a sample with an electron beam that is irradiated with an electron beam onto a stencil mask having an opening pattern, and that is shaped according to the opening pattern of the stencil mask. An exposure system comprising: another pattern distortion measuring apparatus that measures distortion of another pattern to be exposed; and a stencil mask manufacturing apparatus that manufactures a stencil mask for electron beam exposure used in the electron beam exposure apparatus, the stencil The mask manufacturing apparatus manufactures the stencil mask having an opening pattern distorted corresponding to the other pattern distortion measured by the other pattern distortion measuring apparatus.

  According to the present invention, since the opening pattern of the stencil mask for electron beam exposure used in the electron beam exposure is distorted corresponding to the distortion of the other pattern exposed to the sample, it is not necessary to perform distortion correction, Since the opening pattern may be exposed as it is, control is easy. Furthermore, since it is only necessary to distort the opening pattern at the mask manufacturing stage, throughput does not matter so much and it is possible to manufacture an opening pattern that accurately corresponds to the distortion of other patterns. It is possible to improve the condition.

In the case of the mix-and-match exposure method, the opening pattern of the stencil mask for electron beam exposure is distorted according to the pattern exposed by the optical exposure apparatus.
When the pattern of all layers is exposed by the electron beam exposure apparatus, it is sequentially matched with the pattern on the already exposed sample. As a result, it is possible to expose a pattern that matches the distortion of the pattern that occurs when the sample is developed or etched.

  When a stencil mask having an opening pattern is manufactured, a manufacturing distortion that is a deviation from a design value is generated in the manufactured pattern. Therefore, it is desirable to produce a stencil mask having an opening pattern that is distorted by the amount obtained by adding the production distortion in addition to the distortion of the other patterns measured in advance by predicting the production distortion. As a result, a stencil mask having an opening pattern with better matching with other patterns can be manufactured.

  According to the present invention, even when other patterns are distorted, it becomes possible to expose a pattern according to the degree of distortion at a high speed using a high-throughput electron beam exposure apparatus. It is possible to expose a pattern with a small positional deviation.

  Hereinafter, an exposure system according to an embodiment of the present invention will be described. This exposure system is an exposure system in the manufacturing process of a semiconductor device, and is a diagram for exposing an optical exposure device such as a stepper for exposing a pattern of a part of the layer of the semiconductor device and a pattern of the remaining layer of the semiconductor device. Distortion from the design value (reference pattern) of the optical pattern exposed by the electron beam proximity exposure apparatus described in 1, the stencil mask manufacturing apparatus for manufacturing the stencil mask used in the electron beam proximity exposure apparatus, and the optical exposure apparatus An optical pattern distortion measuring apparatus for measuring, and a manufacturing distortion measuring apparatus for measuring distortion from a design value (reference pattern) of a pattern exposed by an electron beam proximity exposure apparatus. In addition, an optical mask manufacturing apparatus for manufacturing a mask of an optical exposure apparatus, a sample (wafer) transport mechanism, a stencil mask, an optical mask transport mechanism, and the like are included, but the description thereof is omitted here. Further, although not included in the exposure system, a coater for applying a resist to a wafer and various processing apparatuses for developing and etching a wafer on which a pattern is exposed are used for measuring optical pattern distortion.

FIG. 5 is a flowchart for explaining a stencil mask manufacturing process in the exposure system of the embodiment.
In step 101, the optical pattern distortion measuring apparatus is used to measure distortion (optical pattern distortion) from the design value (reference pattern) of the optical pattern exposed by the optical exposure apparatus. FIG. 6 is a diagram illustrating a method for measuring optical pattern distortion. Reference numeral 60 denotes an optical exposure apparatus used in the exposure system, and includes a light source 61, an optical mask 62, a projection lens 63, and a table 65 that holds and moves the wafer 64. The optical mask 62 is formed with a pattern corresponding to a reference pattern in design.

Using the optical exposure apparatus described above, the pattern of the optical mask 62 is exposed on the wafer 64 coated with a resist. The wafer 64 exposed with the pattern is developed, and an uneven resist pattern is formed on the wafer 64.
The optical pattern distortion measuring device 65 projects the surface image of the wafer 64 on which the resist pattern is formed on the image sensor 66 by the projection lens 67 and scans the wafer 64 by moving the stage 68 holding the wafer 64 in parallel. A surface image of the entire surface is obtained. Then, a deviation from the design value of the reference position on the pattern is calculated by image processing to obtain the optical pattern distortion. Since the optical exposure apparatus is stable and the pattern to be exposed is considered to be reproducible, the optical pattern distortion may be obtained for a certain reference pattern.

  As disclosed in Japanese Patent Application Laid-Open No. 2003-7596, it is possible to measure the optical pattern distortion by providing a reference mark on the optical pattern and measuring the position of the reference mark precisely. Further, instead of the optical light pattern distortion measuring device 65, an electron beam measuring device using an electron microscope may be used.

  Returning to FIG. 5, in step 102, the manufacturing distortion generated when the stencil mask is manufactured is measured. The stencil mask manufacturing apparatus of the present embodiment uses an electron beam exposure apparatus that has a low throughput but can expose an arbitrary fine pattern. FIG. 7 is a diagram illustrating a method for measuring stencil mask manufacturing distortion.

  An electron beam exposure apparatus 70 of the stencil mask manufacturing apparatus includes an electron beam source 72, a focusing lens 73, an aperture 74, a deflector (coil) 75, an irradiation lens 76, a focus adjustment lens 77, and the like in a column 71 having a vacuum inside. In addition, an electron beam pattern is exposed on a mask wafer 78 coated with a resist held on a stage 79. The electron beam exposure apparatus 70 exposes a pattern in accordance with pattern data supplied from the outside. Here, initially, assuming that no distortion occurs when the stencil mask is manufactured, pattern data indicating an ideal pattern is supplied and the pattern is exposed.

The mask wafer 78 exposed with the electron beam pattern is subjected to processing such as development and etching in a mask manufacturing process (not shown) to manufacture a stencil mask 80 having an opening pattern. The opening pattern of the manufactured stencil mask 80 deviates from a design value indicating an ideal pattern and has distortion.
The stencil mask 80 is held on a stage 83 provided in the vacuum chamber 82, and the opening pattern of the stencil mask 80 is measured by an electron microscope cylinder 81 attached to the vacuum chamber 82. And the manufacturing distortion which is a shift | offset | difference from the measured opening pattern and design value is measured.

  The manufacturing distortion is a combination of distortion of the exposure pattern by the electron beam exposure apparatus 70, distortion caused by processing, stress distortion due to the shape of the opening, and the like. Manufacturing distortion is considered to be reproduced when processing is performed on substantially the same pattern in the same process. Therefore, as described in JP-A-2002-237450, if the pattern data supplied to the electron beam exposure apparatus 70 is corrected by the manufacturing distortion in the reverse direction, a stencil mask as designed can be manufactured.

  Returning to FIG. 5, in step 103, stencil mask correction pattern data capable of exposing an electron beam pattern that matches the optical exposure pattern is determined in consideration of the optical pattern distortion and the manufacturing distortion measured as described above. In step 104, a stencil mask is manufactured according to the correction pattern data. FIG. 8 is a diagram for explaining a final stencil mask manufacturing process.

  Here, the same electron beam exposure apparatus 70 used in the manufacturing distortion measuring step described with reference to FIG. 7 is used. The pattern data indicating the ideal pattern is corrected by the same amount as the optical pattern distortion, and the correction pattern data is determined by correcting the reverse amount of the manufacturing distortion. The correction pattern data is supplied to the electron beam exposure apparatus 70 to expose the electron beam pattern, and various processes are performed to manufacture the stencil mask 85. The opening pattern of the stencil mask 85 is a distorted pattern similar to the distortion of the optical pattern.

  Exposure is performed using the stencil mask 85 manufactured as described above in the electron beam proximity exposure apparatus of the present exposure system. Since the electron beam pattern exposed by this has the same distortion as the optical exposure pattern of the other layer, the pattern is not displaced. In addition, if a stencil mask for exposing other layers is manufactured in the same manner as described above, the electron beam exposure patterns of all layers exposed by the electron beam proximity exposure apparatus have the same distortion as the optical exposure patterns of the other layers. And they match each other, so that pattern displacement does not occur.

As described above, the exposure system using the electron beam proximity exposure apparatus has been described as an example. However, the present invention relates to a projection type electron beam exposure apparatus that uses a mask having an opening pattern with a large area instead of the electron beam proximity exposure apparatus. It is also effective when used.
In the above example, an optical exposure apparatus is used as an example of a mix-and-match exposure system in which patterns of some layers are exposed by an optical exposure apparatus and patterns of other layers are exposed by an electron beam proximity exposure apparatus. The stencil mask was distorted according to the optical pattern distortion, but instead of measuring the optical pattern distortion, the distortion of the pattern already exposed on the wafer was measured, and the stencil was adjusted according to the distortion. The mask may be distorted. If this is the case, it is possible to correct the distortion of the wafer caused by various processes during the process. This method is effective not only when a mix-and-match exposure method is applied, but also when exposing all layers with an electron beam exposure apparatus using a stencil mask. The amount of distortion of the wafer caused by the above can be corrected.

  Japanese Patent Laid-Open No. 2002-373845 discloses an electron beam proximity exposure method in which a mask having a plurality of complementary masks is used to expose a plurality of dies on a wafer with a plurality of complementary masks during one scan. An exposure method is disclosed. When the present invention is applied to this exposure method, as shown in FIG. 9, a plurality of complementary masks 91A, 91B, 91C, 91D on a mask 90 are respectively applied to optical exposure patterns (or already exposed patterns). ).

  Japanese Patent Application Laid-Open No. 2002-217100 discloses a method for manufacturing an electron beam proximity exposure mask with high productivity. The present invention can also be applied to this manufacturing method. In this case, two methods are conceivable depending on which stage the stencil mask distorted is manufactured. Here, it is assumed that one pattern 93 is divided into a plurality of child patterns ap and then synthesized at the time of exposure. One method is to measure the distortion of the optical exposure pattern (or the pattern that has already been exposed), and also measure the manufacturing distortion. Then, as shown in FIG. Produced by distorting p. Thereafter, at the time of exposure for synthesis, the child patterns ap are directly combined and exposed to form one pattern.

  In another method, as shown in FIG. 11A, one pattern 95 is produced by dividing a plurality of child patterns ap according to design values. Then, the plurality of child patterns ap are exposed to measure manufacturing distortion. Further, the distortion of the optical exposure pattern (or the pattern that has already been exposed) is measured, and the plurality of sub-patterns ap are converted into one pattern while correcting the exposure position described in FIG. 4 in consideration of these distortions. By synthesizing, a distorted pattern 97 as shown in FIG. In this case, since the mask is manufactured, the throughput is not a problem. Therefore, it is desirable that the exposure position correction described with reference to FIG. 4 is precisely performed using a very thin electron beam.

  According to the present invention, when exposure is performed using an electron beam exposure apparatus that exposes a pattern of a mask, it is not necessary to adjust the irradiation position of the electron beam on the sample. The throughput of the exposure process is improved, and as a result, the yield of the device manufacturing process can be improved.

It is a basic block diagram of the conventional electron beam proximity exposure apparatus. FIG. 2 is a diagram for explaining scanning of an electron beam on a mask by a main deflector in the electron beam proximity exposure apparatus of FIG. 1. It is a figure explaining the distortion aberration of an optical lens. FIG. 2 is a diagram for explaining a method of adjusting the exposure position by controlling the inclination of the electron beam to the mask pattern by the sub deflector in the electron beam proximity exposure apparatus of FIG. 1. It is a flowchart which shows the manufacturing method of the mask for electron beam exposure of this invention. It is a figure explaining the method to measure optical pattern distortion. It is a figure explaining the method of measuring the manufacturing distortion of a stencil mask. It is a figure explaining the method to manufacture the correct | amended stencil mask. It is a figure which shows the structural example of the mask at the time of applying this invention to the mask which has several complementary masks. It is a figure which shows the structural example of the mask at the time of applying this invention to the method of producing after combining several child masks and producing one mask. It is a figure which shows the other structural example of the mask at the time of applying this invention to the method of producing after combining several child masks and producing one mask.

Explanation of symbols

14 ... Electron beam source 15 ... Electron beams 22, 24 ... Main deflectors 51, 52 ... Sub deflector 30 ... Mask 40 ... Sample (wafer)
60 ... Optical exposure device 65 ... Optical pattern strain measurement device 70 ... Electron beam exposure device 81 ... Electron microscope tube (for manufacturing strain measurement)

Claims (8)

An electron beam exposure stencil mask for use in electron beam exposure in which an electron beam is irradiated onto a stencil mask having an opening pattern and an electron beam shaped according to the opening pattern of the stencil mask is exposed to a sample. ,
Measure the distortion of other patterns exposed to the sample,
A method for producing a stencil mask for electron beam exposure, comprising producing the stencil mask having an aperture pattern distorted corresponding to the measured distortion of the other pattern.   The method of manufacturing a stencil mask for electron beam exposure according to claim 1, wherein the other pattern is a pattern exposed by an optical exposure apparatus.   The method of manufacturing a stencil mask for electron beam exposure according to claim 1, wherein the other pattern is a pattern exposed by an opening pattern of another stencil mask. Predicting production distortion generated when the stencil mask having the opening pattern is produced,
2. The method of manufacturing a stencil mask for electron beam exposure according to claim 1, wherein the stencil mask is manufactured by distorting the opening pattern by an amount corresponding to the manufacturing distortion added to the distortion of the other pattern measured. An electron beam exposure apparatus that irradiates a sample with an electron beam irradiated to a stencil mask having an opening pattern and shaped according to the opening pattern of the stencil mask;
Other pattern distortion measuring device for measuring distortion of other patterns exposed to the sample,
An stencil mask manufacturing apparatus for manufacturing an electron beam exposure stencil mask used in the electron beam exposure apparatus,
The stencil mask manufacturing apparatus manufactures the stencil mask having an opening pattern distorted corresponding to the other pattern distortion measured by the other pattern distortion measuring apparatus.   The exposure system according to claim 5, further comprising an optical exposure apparatus that exposes the other pattern to the sample.   6. The exposure system according to claim 5, wherein the other pattern distortion measuring device measures distortion of an exposed pattern according to an opening pattern of another stencil mask. A manufacturing strain measuring device for measuring a manufacturing strain of the stencil mask having the opening pattern manufactured by the stencil mask manufacturing device;
6. The exposure system according to claim 5, wherein the stencil mask manufacturing apparatus manufactures the stencil mask by distorting the optical pattern distortion measured by the optical pattern distortion measuring apparatus by an amount corresponding to the manufacturing distortion.

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