JP2005093401A - Organic light emitting device, its manufacturing method, and display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a display device capable of compatibly securing display performance and manufacturing possibility. <P>SOLUTION: The thicknesses DR, DG, DB of barrier layers 163R, 163G, 163B out of lower electrode layers 16R, 16G, 16B are made different mutually in the three organic light emitting elements 30R, 30G, 30B (DR > DG > DB). By utilizing the interference phenomenon of light caused by the difference of resonance length among the organic light emitting elements 30R, 30G, 30B based on the difference in these thickness DR, DG, DB, the white light generated in a layer containing the luminous layer 18 is converted into three color light, that is, red color right ER, green color light EG, and blue color light EB. Since it is not necessary to coat selectively the layer containing the luminous layer 18 using a metal mask, the display size can be made large, and since it is not necessary to convert the white light in three color lights ER, EG, EB by using a color filter for color conversion of high concentration and thickness, the utilization efficiency of light is secured. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to an organic light emitting device that emits light using an organic electroluminescence (hereinafter referred to simply as “EL”) phenomenon, a manufacturing method thereof, and a display device that displays an image using the organic light emitting device. .

  In recent years, an organic EL display that displays an image using an organic EL phenomenon has attracted attention as one of flat panel displays. This organic EL display is excellent in that the viewing angle is wide and the power consumption is low because the light emitting phenomenon of the organic light emitting element itself is used. In particular, an organic EL display is considered to have sufficient response to, for example, a high-definition high-speed video signal, and is being developed for practical use in the field of video.

  In the organic EL display, a driving panel provided with an organic light emitting element and a driving element (TFT; Thin Film Transistor) for driving the organic light emitting element and a sealing panel are mainly arranged to face each other. And the sealing panel are bonded through an adhesive layer so as to sandwich the organic light emitting element. The organic light-emitting element has a configuration in which a layer including a light-emitting layer is sandwiched between two electrode layers. The layer including the light-emitting layer includes a light-emitting layer as a light generation source and other than the light-emitting layer. This layer includes a hole transport layer, an electron transport layer, and the like. As a display method of this organic EL display, for example, a top emission type that emits light generated in the light emitting layer via one electrode layer (an electrode layer on the side close to the sealing panel), and the other electrode layer ( A bottom emission type is known which emits via an electrode layer on the side close to the drive panel.

  In this organic EL display, several mechanisms have already been technicalized as mechanisms for displaying full-color images using organic light-emitting elements. Specifically, for example, three colors corresponding to the three primary colors of light, that is, red (R), green (G) and blue (B) light are generated separately. A display mechanism in which three organic light-emitting elements are formed by depositing and coating three possible light-emitting layers separately, and pixels of three colors are formed based on these three organic light-emitting elements has been technically developed. In addition, for example, using three organic light emitting elements that generate white light, and using a color filter for color conversion, each white light is converted into light of three colors (R, G, B). A display mechanism for displaying is technically developed. In this case, in order to ensure the color conversion function of the color filter, it is necessary to increase the filter density or design the filter to be thick.

As for the display mechanism of the organic EL display, several other related technologies have been proposed. Specifically, for example, in order to improve the emission efficiency of light emitted from an organic light emitting device, a technique is known in which the thickness of layers other than the light emitting layer among the layers including the light emitting layer is different for each color. (For example, refer to Patent Document 1). In this organic EL display, light emission efficiency is improved for each color by utilizing a light interference phenomenon based on a difference in thickness of layers other than the light emitting layer, that is, a difference in optical path length in the light emission process.
JP 2000-323277 A

In addition, for example, in order to improve the light emission efficiency as in the related art described above, the thickness of the layers other than the light emitting layer is made constant for each color, and the thickness of the electrode layer (transparent electrode) is set for each color. There is known a technique for making it different from one to another (for example, see Patent Document 2). In this organic EL display, light emission efficiency is improved for each color by utilizing the light interference phenomenon based on the difference in thickness of the electrode layers.
JP 2003-142277 A

In addition, for example, in order to reduce the resistance of an electrode layer (transparent electrode), a technique of inserting a metal thin film (for example, silver (Ag) having a thickness of 50 nm or less) into the electrode layer is known (for example, a patent Reference 3). In this organic EL display, the resistance of the electrode layer is reduced by utilizing the conductive characteristics of the metal thin film.
JP 2002-334792 A

In addition, for example, in order to efficiently generate high-intensity white light, a blue light-emitting layer that generates blue light, a green light-emitting layer that generates green light, and a red light-emitting layer that generates red light are provided. A technique for forming a light emitting layer by stacking is known (for example, see Patent Document 4). In this organic EL display, white light is increased in luminance based on the structural features of the light emitting layer formed by laminating a blue light emitting layer, a green light emitting layer, and a red light emitting layer, and the generation efficiency of the white light is increased. Will improve.
JP-A-10-003990

  By the way, in order to spread the organic EL display, for example, it is necessary to ensure both display performance and manufacturability. However, the above-described conventional organic EL display has a problem that it is difficult to achieve both ensuring display performance and ensuring manufacturability mainly due to a display mechanism and a manufacturing method.

  Specifically, in a conventional organic EL display in which three organic light-emitting elements are formed by depositing and coating three types of light-emitting layers, for example, three colors (R, G, and R) generated in each organic light-emitting element are used. Since the light of B) can be used as it is, there is an advantage in the display performance that there is little use loss of light. However, a mask (for example, metal) is used to deposit and coat three types of light emitting layers. Therefore, it is difficult to increase the size of the metal mask, so that it is difficult to increase the display size. On the other hand, in a conventional organic EL display that converts white light into light of three colors (R, G, B) using a color filter, for example, each light emitting layer is made of the same material and uses a metal mask. There is an advantage in manufacturability that it is possible to increase the size of the display because it is not necessary to separately coat the light emitting layer, but white light is used by using a high-density and thick color filter. Since the light is easily absorbed in the process of converting the light into three colors of light, there is a drawback in display performance that the use loss of light becomes large.

  As for the conventional organic EL display, as described above, as a series of related technologies, there are currently several proposals for improving only the display performance, so the organic EL display is widely used. Considering today's market trends, it can be said that there is still room for improvement in terms of manufacturability.

  The present invention has been made in view of such problems, and a first object thereof is to provide a display light emitting device capable of ensuring both display performance and manufacturability.

  A second object of the present invention is to provide a method for manufacturing an organic light emitting device capable of easily and stably manufacturing the organic light emitting device of the present invention.

  Furthermore, a third object of the present invention is to provide a display device provided with the display light emitting device of the present invention.

  The organic light emitting device according to the present invention has a configuration in which a first electrode layer, a layer including a light emitting layer, and a second electrode layer are laminated, and converts light generated in the light emitting layer into light of three different colors. Resonance for causing the first electrode layer to resonate light generated in the light emitting layer with the second electrode layer in order from the side far from the layer including the light emitting layer. It includes a laminated structure in which a reflective layer having an end face and a barrier layer for protecting the reflective layer are laminated, and the position of the resonant end face in the reflective layer in the stacking direction is at least two of the three organic light emitting devices. The barrier layers have different thicknesses between the three organic light emitting devices.

  In addition, the method for manufacturing an organic light emitting device according to the present invention has a configuration in which a first electrode layer, a layer including a light emitting layer, and a second electrode layer are stacked, and three colors of light generated in the light emitting layer are different from each other. Is a method of manufacturing an organic light emitting device including three organic light emitting elements that convert and emit light of the light from the second electrode layer in order from the side far from the layer including the light emitting layer. Forming a first electrode layer so as to include a laminated structure in which a reflective layer having a resonance end face for resonating between and a barrier layer for protecting the reflective layer is laminated, The position of the resonance end face in the stacking direction is different between at least two of the three organic light emitting elements, and the thickness of the barrier layer is different between the three organic light emitting elements. so That.

  Furthermore, the display device according to the present invention has a configuration in which a first electrode layer, a layer including a light emitting layer, and a second electrode layer are stacked, and converts light generated in the light emitting layer into light of three different colors. The organic EL device includes three organic light emitting elements that display an image by being emitted, and the first electrode layer emits light generated in the light emitting layer in order from the side far from the layer including the light emitting layer. A position in the stacking direction of the resonance end face of the reflection layer includes a stacked structure in which a reflection layer having a resonance end face for resonating with the electrode layer and a barrier layer for protecting the reflection layer are stacked. Are different from each other in at least two of the three organic light emitting devices, and the thickness of the barrier layer is different between the three organic light emitting devices.

  In the organic light emitting device according to the present invention, the position in the stacking direction of the resonance end face of the reflective layer is different between at least two of the three organic light emitting elements, and the barrier layer has a thickness of three organic layers. Since the light emitting elements are different from each other, for example, if light of the same color is generated between the three organic light emitting elements in the light emitting layer, the three organic light emitting elements based on the difference in the thickness of the barrier layer are used. The light generated in the light emitting layer is converted into three colors of light for image display (red light, green light, and blue light) by utilizing the light interference phenomenon caused by the difference in resonance length between It is possible.

  Further, in the method for manufacturing an organic light emitting device according to the present invention, the position of the resonance end face in the reflection layer in the stacking direction is different between at least two of the three organic light emitting elements, and the thickness of the barrier layer. In order to continuously and reproducibly form the first electrode layer having a characteristic configuration in which the three organic light emitting elements are different from each other, only the existing thin film process is used, which is new and complicated. Do not use a simple manufacturing process.

  Furthermore, since the display device according to the present invention includes the organic light emitting device of the present invention, it is not necessary to separately coat the light emitting layer using a metal mask in manufacturing the display device, and the light emitting layer is generated in the light emitting layer. There is no need to color-convert light with a color filter. As a result, the display size can be increased and the light use efficiency can be ensured.

  According to the organic light emitting device of the present invention, the position of the resonance end face in the reflection layer in the stacking direction is different between at least two of the three organic light emitting elements, and the thickness of the barrier layer is 3 The light generated in the light emitting layer is converted into three colors of light for image display (red light, green light, and blue light) based on structural features that are different between the two organic light emitting elements. Therefore, by using this organic light emitting device, it is possible to configure a display device capable of ensuring both display performance and manufacturability.

  Further, according to the method for manufacturing the organic light emitting device according to the present invention, the position of the resonance end face in the reflection layer in the stacking direction is at least two of the three organic light emitting elements using only the existing thin film process. Organic light-emitting devices that are different from each other and have different barrier layer thicknesses among the three organic light-emitting elements can be manufactured. Therefore, the organic light-emitting devices can be manufactured easily and stably.

  Furthermore, according to the display device according to the present invention, the organic light emitting device of the present invention is provided, the display size can be increased and the light use efficiency can be ensured. It is possible to achieve both ensuring the production and securing the manufacturability.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]
First, a configuration of an organic EL display as a display device according to the first embodiment of the present invention will be described with reference to FIG. FIG. 1 shows a cross-sectional configuration of an organic EL display.

  This organic EL display displays an image using the organic EL phenomenon. For example, as shown in FIG. 1, the organic light emitting element 30 and a driving element (TFT) for driving the organic light emitting element 30 are provided. A driving panel 10 as an organic light emitting device provided with a thin film transistor) 12 and a sealing panel 50 are disposed to face each other, and the driving panel 10 and the sealing panel 50 are bonded so as to sandwich the organic light emitting element 30 therebetween. It has a configuration in which the layers 60 are bonded together. This organic EL display has, for example, a top emission type structure that emits light E generated in the organic light emitting element 30 upward, that is, from the sealing panel 50 to the outside.

  The drive panel 10 has a configuration in which three organic light emitting elements 30R, 30G, and 30B are provided as the organic light emitting elements 30 on the driving substrate 11 as a base. Specifically, the drive panel 10 is provided, for example, on the one surface of the drive substrate 11 as three TFTs 121, 122, and 123 as the TFT 12, the interlayer insulating layer 13, and two sets of each of the TFTs 121 to 123. The wiring 14, the planarizing layer 15 as a base region in which the organic light emitting elements 30 (30R, 30G, 30B) are disposed, the organic light emitting elements 30 (30R, 30G, 30B), the auxiliary wiring 40, and the inside of the layer The insulating layer 17 and the protective layer 20 are stacked in this order.

  The drive substrate 11 is for supporting the organic light emitting element 30 and the TFT 12, and is made of an insulating material such as glass.

  The TFTs 12 (121, 122, 123) are for driving the organic light emitting elements 30 (30R, 30G, 30B) to emit light. The TFT 12 includes a gate electrode, a source electrode, and a drain electrode (not shown). The gate electrode is connected to a scanning circuit (not shown), and both the source electrode and the drain electrode are provided on the interlayer insulating layer 13. The wiring 14 is connected through a connection hole (not shown). The configuration of the TFT 12 is not particularly limited, and may be, for example, a bottom gate type or a top gate type.

The interlayer insulating layer 13 is for electrically separating the TFTs 121 to 123, and is made of an insulating material such as silicon oxide (SiO ₂ ) or PSG (Phospho-Silicate Glass).

  The wiring 14 functions as a signal line and is made of a conductive material such as aluminum (Al) or aluminum copper alloy (AlCu).

The planarization layer 15 is for planarizing a base region in which the organic light emitting element 30 is disposed, and for forming a series of layers constituting the organic light emitting element 30 with high accuracy. For example, polyimide or polybenzo It is composed of an organic insulating material such as oxazole and an inorganic insulating material such as silicon oxide (SiO ₂ ).

  The organic light emitting element 30 (30R, 30G, 30R) generates light E for image display. Specifically, it emits light of a predetermined color (wavelength) generated in a layer 18 including a light emitting layer described later. It is converted into light of three colors (R; Red, G; Green, B; Blue) corresponding to the three primary colors of light and emitted. The organic light emitting element 30R emits red light ER, and in order from the side closer to the driving substrate 11, the lower electrode layer 16R as the first electrode layer, the layer 18 including the light emitting layer, and the second The upper electrode layer 19 as an electrode layer is laminated. The organic light emitting element 30G emits green light EG, and in order from the side close to the driving substrate 11, a lower electrode layer 16G as a first electrode layer, a layer 18 including a light emitting layer, and an upper electrode The layer 19 is laminated. The organic light emitting element 30B emits blue light EB, and in order from the side closer to the driving substrate 11, a lower electrode layer 16B as a first electrode layer, a layer 18 including a light emitting layer, and an upper electrode The layer 19 is laminated. These organic light emitting elements 30R, 30G, and 30B are disposed corresponding to the TFTs 121 to 123, for example, and the lower electrode layers 16R, 16G, and 16B are all connection holes provided in the planarization layer 15. It is connected to a wiring 14 provided for each of the TFTs 121 to 123 through (not shown). The detailed configuration of the organic light emitting elements 30R, 30G, and 30B will be described later (see FIGS. 2 and 3).

  The auxiliary wiring 40 is for reducing a resistance difference between the three organic light emitting elements 30R, 30G, and 30B by relaxing a difference in resistance between a power source (not shown) and the upper electrode layer 19, and an upper portion thereof. The electrode layer 19 is electrically connected. The auxiliary wiring 40 is disposed on the same level as the organic light emitting elements 30R, 30G, and 30B. For example, the auxiliary wiring 40 has substantially the same configuration as the organic light emitting element 30R. A detailed configuration of the auxiliary wiring 40 will be described later (see FIG. 2).

The in-layer insulating layer 17 electrically isolates the organic light emitting elements 30R, 30G, 30B and the auxiliary wiring 40, and emits light E (ER, EG, EB) emitted from each organic light emitting element 30R, 30G, 30B. Is provided around the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40. The in-layer insulating layer 17 is made of, for example, an organic insulating material such as polyimide or polybenzoxazole, or an inorganic insulating material such as silicon oxide (SiO ₂ ), and has a thickness of about 600 nm.

The protective layer 20 is for protecting the organic light emitting element 30 and is, for example, a passivation film made of a light transmissive dielectric material such as silicon oxide (SiO ₂ ) or silicon nitride (SiN).

  The sealing panel 50 has a configuration in which a color filter 52 is provided on one surface of the sealing substrate 51.

  The sealing substrate 51 supports the color filter 52 and allows the light ER, EG, EB emitted from the organic light emitting elements 30R, 30G, 30B to pass therethrough and be emitted to the outside. It is made of an insulating material such as glass.

  The color filter 52 guides the light ER, EG, and EB emitted from the organic light emitting elements 30R, 30G, and 30B to the outside of the organic EL display, and the outside light enters the inside of the organic EL display and emits each organic light emission. When reflected on the elements 30R, 30G, 30B and the auxiliary wiring 40, the reflected light is absorbed to ensure contrast. The color filter 52 includes three regions arranged corresponding to the organic light emitting elements 30R, 30G, and 30B, that is, a red region 52R, a green region 52G, and a blue region 52B. These red regions The 52R, green region 52G, and blue region 52B are made of, for example, a resin mixed with red, green, and blue pigments, respectively.

  The adhesive layer 60 is for bonding the drive panel 10 and the sealing panel 50 together and is made of an adhesive material such as a thermosetting resin.

  In FIG. 1, only three TFTs 12 (TFTs 121 to 123) and one set of organic light emitting elements 30 (three organic light emitting elements 30R, 30G, and 30B) are shown for simplification of illustration. A plurality of TFTs 12 are provided in a matrix on the driving substrate 11, and a plurality of sets of organic light emitting elements 30 are arranged corresponding to the plurality of TFTs 12.

  Next, with reference to FIG. 1 and FIG. 2, the detailed structure of the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40 will be described. FIG. 2 schematically shows an enlarged cross-sectional configuration of the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40.

  The organic light emitting elements 30R, 30G, and 30B have, for example, a stacked structure having different total thicknesses as shown in FIG. Of these organic light emitting elements 30R, 30G, and 30B, the lower electrode layers 16R, 16G, and 16B are configured so that light generated in the layer 18 including the light emitting layer is sequentially generated from the side far from the layer 18 including the light emitting layer. Reflective layers 162R, 162G, 162B having end faces (resonant end faces) PR1, PG1, PB1 for resonating with the layer 19, and barrier layers 163R, 163G for protecting these reflective layers 162R, 162G, 162B , 163B are included. Specifically, the lower electrode layers 16R, 16G, and 16B include, for example, a stack unit U in which a “lower electrode constituent layer” and an “upper electrode constituent layer” are stacked in order from the side far from the layer 18 including the light emitting layer. And has a laminated structure in which the laminated unit U is repeated one or more times. As will be described later, the “lower electrode constituent layer” is a “true reflective layer (reflective layers 162R, 162G, 162B)” that is substantially responsible for the resonance function, and a “simulated” that is not substantially responsible for the resonance function. The “upper electrode constituent layer” is also a “true barrier layer (barrier layers 163R, 163G, 163B)” that substantially plays a protective function, It is a conceptual layer that includes both a “simulated barrier layer” that has no protective function.

  The organic light emitting element 30R as the first organic light emitting element includes, for example, a lower electrode layer 16R, a layer 18 including a light emitting layer, and an upper electrode layer 19 in order from the side closer to the driving substrate 11 as described above. Are stacked. The lower electrode layer 16R includes, for example, two of the above-described lamination units U, that is, in order from the side far from the layer 18 including the light emitting layer, the adhesion layer 161R, the lower electrode configuration layer 162R1, and the upper electrode configuration layer 163R1. The lower electrode constituent layer 162R2 and the upper electrode constituent layer 163R2 are stacked, and the uppermost layer (lower electrode constituent layer 162R2) of the lower electrode constituent layers 162R1 and 162R2 is “true reflection layer” 162R ”, and the uppermost layer (upper electrode configuration layer 163R2) of the upper electrode configuration layers 163R1 and 163R2 is the“ true barrier layer 163R ”. The barrier layer 163R has, for example, a configuration in which a lower barrier layer 163RX as a lower layer and an upper barrier layer 163RY as an upper layer are stacked in this order. As described above, the organic light emitting element 30R has a resonance structure (a kind of narrow band filter) that resonates light generated in the layer 18 including the light emitting layer between the reflective layer 162R and the upper electrode layer 19. In addition, the optical distance L (LR) between the reflective layer 162R and the upper electrode layer 19 satisfies, for example, the relationship of the following formula 2. In particular, the organic light emitting element 30R converts light generated in the layer 18 including the light emitting layer into red light ER. More specifically, for example, in a top emission type organic EL display, the light emitting layer is provided. The light generated in the containing layer 18 is resonated between the reflective layer 162R and the upper electrode layer 19, and then emitted through the upper electrode layer 19.

(Equation 2)
(2LR) / λ + Φ / (2π) = mR
(Where LR, λ, Φ, and mR are such that LR is the reflective layer 162R (the end face (resonant end face) PR1 as the first end face adjacent to the barrier layer 163R of the reflective layer 162) and the upper electrode layer 19 ( The optical distance between the upper electrode layer 19 and the end face PR2 as the second end face adjacent to the layer 18 including the light emitting layer, λ is the peak wavelength of the spectrum of light to be emitted, and Φ is the reflection layer (end face) PR1) and the phase shift of the reflected light generated in the upper electrode layer (end face PR2), mR represents 0 or an integer (for example, mR = 0, respectively).

The adhesion layer 161 </ b> R is for improving the adhesion of the reflective layer 162 </ b> R and the barrier layer 163 </ b> R to the driving substrate 11, more specifically, the planarization layer 15 provided on one surface of the driving substrate 11. The adhesion layer 161R includes, for example, chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), gallium (Ga), and molybdenum ( It is made of at least one metal of the group containing Mo), an alloy of the metal, a metal oxide or a metal nitride thereof, and has a thickness of about 1 nm to 300 nm. As these “alloys”, “metal oxides” and “metal nitrides”, for example, indium tin alloy (InSn), indium zinc alloy (InZn), aluminum neodymium alloy (AlNd) and aluminum copper alloy siliconized as alloys (AlCuSi), indium tin oxide (ITO), indium zinc oxide (IZO) or chromium oxide (Cr ₂ O ₃ ) as metal oxide, and titanium nitride (TiN) as metal nitride Can be mentioned. In particular, the adhesion layer 161R is preferably made of, for example, ITO or IZO excellent in adhesion and conductivity. The thickness of the adhesion layer 161R is preferably about 1 nm to 300 nm, for example, when it is made of ITO or IZO having excellent conductivity as described above, and further, considering the surface flatness of the ITO. 3 nm to 50 nm is more preferable. On the other hand, when it is made of chromium oxide having lower conductivity than ITO or IZO, the connection resistance between the wiring 14 and the lower electrode layer 16R is prevented from becoming too large. Above, about 1 nm to 20 nm is preferred.

  The reflective layer 162R (lower electrode constituent layer 162R2) functions as a reflective layer for causing light generated in the layer 18 including the light emitting layer to resonate with the upper electrode layer 19. For example, silver (Ag) Or it is comprised with the alloy containing silver. Examples of the alloy containing silver include, together with silver, palladium (Pd), neodymium (Nd), samarium (Sm), yttrium (Y), cerium (Ce), europium (Eu), gadolinium (Gd), terbium ( An alloy comprising at least one of the group comprising Tb), dysprosium (Dy), erbium (Er), ytterbium (Yb), scandium (Sc), ruthenium (Ru), copper (Cu) and gold (Au), Specific examples include silver palladium copper alloy (AgPdCu). The thickness of the reflective layer 162R is, for example, about 100 nm to 300 nm, which is larger than the thickness of the upper electrode layer 19 in the top emission type organic EL display. The lower electrode constituent layer 162R1 is a simulation layer that does not substantially have a resonance function, and is made of, for example, the same material as that of the reflective layer 162R (lower electrode constituent layer 162R2).

The barrier layer 163R (upper electrode constituting layer 163R2) is made of, for example, a material having a work function larger than that of the reflective layer 162R (lower electrode constituting layer 162R2), and has a thickness of about 1 nm to 200 nm. Specifically, the barrier layer 163R includes, for example, indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga), and aluminum (Al ), A light transmissive material including at least one metal of the group, an alloy of the metal, a metal oxide, or a metal nitride thereof. These “alloys”, “metal oxides” and “metal nitrides” include, for example, indium tin alloys and indium zinc alloys as alloys, ITO, IZO, indium oxide (In ₂ O ₃ ), and oxidation as metal oxides. Examples include tin (SnO ₂ ), zinc oxide (ZnO), cadmium oxide (CdO), titanium oxide (TiO ₂ ) and chromium oxide (CrO ₂ ), and metal nitrides such as titanium nitride and chromium nitride (CrN). Of the barrier layer 163R, the lower barrier layer 163RX is made of, for example, ITO, and the upper barrier layer 163RY is made of, for example, IZO. The upper electrode configuration layer 163R1 is a simulation layer that does not substantially have a protective function, and is made of, for example, the same material as the barrier layer 163R (upper electrode configuration layer 163R2).

  The organic light emitting element 30G as the second organic light emitting element has substantially the same configuration as the organic light emitting element 30R except that, for example, the configuration of the barrier layer 163G is different. That is, for example, as described above, the organic light emitting element 30G has a configuration in which the lower electrode layer 16G, the layer 18 including the light emitting layer, and the upper electrode layer 19 are stacked in order from the side closer to the driving substrate 11. Have. The lower electrode layer 16G includes, for example, the two stacking units U described above, that is, in order from the side far from the layer 18 including the light emitting layer, the adhesion layer 161G, the lower electrode configuration layer 162G1, and the upper electrode configuration layer 163G1. The lower electrode constituent layer 162G2 and the upper electrode constituent layer 163G2 are stacked, and the uppermost layer (lower electrode constituent layer 162G2) of the lower electrode constituent layers 162G1 and 162G2 is “true reflection layer” 162G ”, and the uppermost layer (upper electrode configuration layer 163G2) of the upper electrode configuration layers 163G1 and 163G2 is the“ true barrier layer 163G ”. For example, the barrier layer 163G has a single-layer structure unlike the barrier layer 163R in the organic light emitting element 30R. The material of the lower electrode constituent layers 162G1 and 162G2 in the lower electrode layer 16G is, for example, the same as that of the lower electrode constituent layers 162R1 and 162R2 in the lower electrode layer 16R, and the material of the upper electrode constituent layers 163G1 and 163G2 Is the same as, for example, the upper electrode constituent layers 163R1 and 163R2.

  Similar to the organic light emitting element 30R, the organic light emitting element 30G has a resonance structure that causes the light generated in the layer 18 including the light emitting layer to resonate between the reflective layer 162G and the upper electrode layer 19. The optical distance L (LG) between 162G and the upper electrode layer 19 satisfies, for example, the following equation (3). In particular, the organic light emitting element 30G converts light generated in the layer 18 including the light emitting layer into green light EG. More specifically, for example, in a top emission type organic EL display, The light generated in the containing layer 18 is resonated between the reflective layer 162G and the upper electrode layer 19 and then emitted through the upper electrode layer 19.

(Equation 3)
(2LG) / λ + Φ / (2π) = mG
(Where LG, Φ, and mG are the same as LG in the reflective layer 162G (the end face (resonant end face) PG1 as the first end face adjacent to the barrier layer 163G in the reflective layer 162G) and the upper electrode layer 19 (upper electrode). The optical distance between the layer 19 and the end face PG2 as the second end face adjacent to the layer 18 including the light emitting layer, Φ is the reflection layer 162G (end face PG1) and the upper electrode layer 19 (end face PG2). (The phase shift of the generated reflected light, mG represents 0 or an integer (for example, mG = 0).)

  As described above, the organic light emitting element 30B as the third organic light emitting element includes, for example, the lower electrode layer 16B, the layer 18 including the light emitting layer, and the upper electrode layer 19 in order from the side closer to the driving substrate 11. Are stacked. The lower electrode layer 16B includes, for example, one stacking unit U described above, that is, in order from the side farther from the layer 18 including the light emitting layer, the adhesion layer 161B, the lower electrode configuration layer 162B1, and the upper electrode configuration layer 163B1. The lower electrode constituent layer 162B1 is a “true reflection layer 162B”, and the upper electrode constituent layer 163B1 is a “true barrier layer 163B”. The material of the lower electrode constituent layer 162B1 in the lower electrode layer 16B is the same as, for example, the lower electrode constituent layers 162R1 and 162R2 in the lower electrode layer 16R, and the material of the upper electrode constituent layer 163B1 is, for example, This is the same as the upper electrode constituent layers 163R1 and 163R2.

  Similar to the organic light emitting element 30R, the organic light emitting element 30B has a resonance structure in which light generated in the layer 18 including the light emitting layer resonates between the reflective layer 162B and the upper electrode layer 19, and the reflective layer The optical distance L (LB) between 162B and the upper electrode layer 19 satisfies, for example, the following equation (4). In particular, the organic light emitting element 30B converts light generated in the layer 18 including the light emitting layer into blue light EB. More specifically, for example, in a top emission type organic EL display, the light emitting layer is used. The light generated in the containing layer 18 is resonated between the reflective layer 162 </ b> B and the upper electrode layer 19 and then emitted through the upper electrode layer 19.

(Equation 4)
(2LB) / λ + Φ / (2π) = mB
(In the formula, LB, Φ, and mB are the same as the reflection layer 162B (the end surface (resonance end surface) PB1 as the first end surface adjacent to the barrier layer 163B of the reflection layer 162B) and the upper electrode layer 19 (upper electrode). The optical distance between the layer 19 and the end face PB2 as the second end face adjacent to the layer 18 including the light-emitting layer, Φ is the reflection layer 162B (end face PB1) and the upper electrode layer 19 (end face PB2). (The phase shift of the generated reflected light, mB represents 0 or an integer (for example, mB = 0).)

  Before confirmation, in FIG. 2, in order to make the difference in configuration between the organic light emitting elements 30R, 30G, and 30B easier to see, the layer 18 including the light emitting layer and the upper electrode layer 19 are both separated into the organic light emitting elements 30R, 30G, and 30B. However, in practice, for example, as shown in FIGS. 1 and 2, the layer 18 including the light emitting layer is formed of the lower electrode layer 16R (barrier layer 163R) of the organic light emitting element 30R. ) On the lower electrode layer 16G (barrier layer 163G) of the organic light emitting element 30G and on the lower electrode layer 16B (barrier layer 163B) of the organic light emitting element 30B. In addition, the upper electrode layer 19 continuously extends so as to cover the light-emitting layer 18, that is, both the layer 18 including the light-emitting layer and the upper electrode layer 19 are each organic. Departure Elements 30R, 30G, and is shared by 30B. A detailed configuration of 18 including the light emitting layer will be described later (see FIG. 3).

  The upper electrode layer 19 includes, for example, at least one metal selected from the group including silver (Ag), aluminum (Al), magnesium (Mg), calcium (Ca), and sodium (Na), or an alloy including the metal. Etc. Examples of the “metal-containing alloy” include a magnesium silver alloy (MgAg). For example, in the top emission type organic EL display, the thickness of the upper electrode layer 19 is thinner than the reflective layers 162R, 162G, and 162B, and is about 1 nm to 20 nm. In particular, the upper electrode layer 19 reflects the light generated in 18 including the light emitting layer based on the fact that the organic light emitting elements 30R, 30G, and 30B all have a resonance structure as described above. It functions as a transflective layer that reflects the light to resonate with 162B and transmits the light ER, EG, and EB after resonating as necessary to emit the light.

  As shown in FIG. 2, the positions (heights) of the resonance end faces PR1, PG1, and PB1 in the stacking direction (vertical direction in the drawing) of the reflective layers 162R, 162G, and 162B are the three organic light emitting elements 30R, At least two of 30G and 30B are different from each other. Specifically, for example, the positions of the resonance end faces PR1, PG1, and PB1 coincide with each other between the organic light emitting elements 30R and 30G, and between the organic light emitting elements 30R and 30G and the organic light emitting element 30B. In other words, the positions of the resonance end faces PR1 and PG1 are higher than the position of the resonance end face PB1.

  In addition, the thicknesses HR, HG, HB of the layer 18 including the light emitting layer among the organic light emitting elements 30R, 30G, 30B are, for example, equal to each other among the three organic light emitting elements 30R, 30G, 30B ( HR = HG = HB). The layer 18 including the light emitting layer is, for example, an organic layer, and generates light of the same color (wavelength) between the three organic light emitting elements 30R, 30G, and 30B.

  In particular, the thicknesses DR, DG, and DB of the barrier layers 163R, 163G, and 163B are different from each other among the three organic light emitting elements 30R, 30G, and 30B. Specifically, the three organic light emitting elements 30R, 30G, and The three colors of light ER, EG, and EB emitted from 30B are different from each other. That is, the thicknesses DR, DG, and DB convert the light generated by the three organic light emitting elements 30R, 30G, and 30B in the layer 18 including the light emitting layer into red light ER, green light EG, and blue light EB, respectively. Specifically, in correspondence with the red light ER, the green light EG, and the blue light EB emitted from the three organic light emitting elements 30R, 30G, and 30B. It becomes thinner in order (DR> DG> DB). As described above, “the light generated in the layer 18 including the light emitting layer is converted into the red light ER, the green light EG, and the blue light EB and emitted” is, for example, as shown in FIG. Process in which light generated at points NR, NG, and NB in the layer 18 including the light is resonated between the reflective layers 162R, 162G, and 162B and the upper electrode layer 19 and then emitted through the upper electrode layer 19 In the case of using NR, NG, and NB, they have the same wavelength when they occur in NR, utilizing the light interference phenomenon caused by the fact that the resonance lengths between the three organic light emitting elements 30R, 30G, and 30B are different from each other. The wavelength of the emitted light is different for each of the organic light emitting elements 30R, 30G, and 30B, that is, the wavelength corresponding to red in the organic light emitting element 30R, the wavelength corresponding to green in the organic light emitting element 30G, By shifting each wavelength corresponding to blue in the organic light emitting device 30B to the Rabbi, a final red light ER, means of generating green light EG and blue light EB.

  The auxiliary wiring 40 reduces the wiring resistance as much as possible. For example, as shown in FIG. 2, the auxiliary wiring 40 is the most total of the organic light emitting elements 30R, 30G, and 30B, except that the layer 18 including the light emitting layer is not included. It has a stacked structure similar to that of the thick element, that is, the organic light emitting element 30R.

  Next, with reference to FIGS. 1-3, the detailed structure of 18 containing a light emitting layer is demonstrated. FIG. 3 schematically shows an enlarged cross-sectional configuration of the layer 18 including the light emitting layer.

  For example, as described above, the layer 18 including the light emitting layer is shared by the organic light emitting elements 30R, 30G, and 30B, that is, has a common configuration between the organic light emitting elements 30R, 30G, and 30B, and has a predetermined color. White light is generated as (wavelength) light. For example, as shown in FIGS. 2 and 3, the layer 18 including the light-emitting layer includes a hole transport layer 181, a light-emitting layer 182, and an electron transport in this order from the side closer to the lower electrode layers 16R, 16G, and 16B. The layer 183 is stacked. For example, the light emitting layer 182 includes a red light emitting layer 182R that generates red light, 182G that generates green light, and 182B that generates blue light in order from the side closer to the hole transport layer 181. That is, by combining the red light, the green light, and the blue light generated from the red light emitting layer 182R, the green light emitting layer 182G, and the blue light emitting layer 182B, respectively, a white light is obtained as a result. It is supposed to be generated.

  The hole transport layer 181 is for increasing the injection efficiency of holes injected into the light emitting layer 182, and also serves as a hole injection layer, for example. The hole transport layer 181 has a hole transport property such as 4,4 ′, 4 ″ -tris (3-methylphenylphenylamino) triphenylamine (m-MTDATA) or α-naphthylphenyldiamine (αNPD). It is made of a material and has a thickness of about 40 nm.

  The red light emitting layer 182R includes a part of holes injected from the lower electrode layers 16R, 16G, and 16B via the hole transport layer 181 and electrons injected from the upper electrode layer 19 via the electron transport layer 183. The red light is generated by recombination with a part of the light. The red light emitting layer 182R includes, for example, at least one of a group including a red light emitting material (fluorescent or phosphorescent), a hole transporting material, an electron transporting material, and a dual charge (hole, electron) transporting material. It is composed of seeds, and its thickness is about 5 nm. As a specific constituent material of the red light emitting layer 182R, for example, about 30% by weight of 2,6-bis [(4′-methoxydiphenylamino) styryl] -1,5-dicyanonaphthalene (BSN) is mixed. 4,4′-bis (2,2-diphenylvinyl) biphenyl (DPVBi) and the like.

  The green light emitting layer 182G generates green light by recombining holes and electrons that have not been recombined in the red light emitting layer 182R. The green light emitting layer 182G is composed of, for example, at least one of a group including a green light emitting material (fluorescent or phosphorescent), a hole transporting material, an electron transporting material, and a charge transporting material. The thickness is about 10 nm. Specific examples of the constituent material of the green light emitting layer 182G include DPVBi mixed with about 5% by weight of coumarin 6 and the like.

  The blue light emitting layer 182B generates blue light by recombining holes and electrons that have not been recombined in the red light emitting layer 182R or the green light emitting layer 182G. The blue light emitting layer 182B includes, for example, at least one of a group including a blue light emitting material (fluorescent or phosphorescent), a hole transporting material, an electron transporting material, and a charge (hole, electron) transporting material. It is composed of seeds, and its thickness is about 30 nm. As a specific constituent material of the blue light emitting layer 182B, for example, 4,4′-bis [2, {4- (N, N-diphenylamino) phenyl} vinyl] biphenyl (DPAVBi) is about 2.5 wt. % Mixed DPVBi and the like.

The electron transport layer 183 is for increasing the injection efficiency of electrons injected into the light emitting layer 182 and also serves as an electron injection layer, for example. The electron transport layer 183 is made of, for example, 8-hydroxyquinoline aluminum (Alq ₃ ) and has a thickness of about 20 nm.

  Next, the operation of the organic EL display will be described with reference to FIGS.

  In this organic EL display, as shown in FIG. 1, three organic light emitting elements 30R, 30G, and 30B are driven using the TFTs 12 (121 to 123), that is, the lower electrode layers 16R, 16G, and 16B and the upper electrode. When a voltage is applied to each of the layers 19, as shown in FIG. 3, in the light emitting layer 182 of the layers 18 including the light emitting layer, the holes and the electron transport supplied from the hole transport layer 181 are transported. White light is generated by recombination with electrons supplied from the layer 183. The white light is a combined light in which red light generated in the red light emitting layer 182R, green light generated in the green light emitting layer 182G, and blue light generated in the blue light emitting layer 182B are combined.

  As shown in FIG. 2, the white light is emitted from the organic light emitting elements 30R, 30G, and 30B as image display light E to the outside of the organic EL display. The wavelength conversion is performed by utilizing the light interference phenomenon caused by the difference in the resonance length between the red light ER, the green light EG, and the blue light EB in the organic light emitting devices 30R, 30G, and 30R. Is done. As a result, as shown in FIG. 1, since the red light ER, the green light EG, and the blue light EB are emitted from the organic light emitting elements 30R, 30G, and 30B, respectively, these three colors of light ER, EG , EB is displayed based on the video.

  When the light ER, EG, EB is emitted from the organic light emitting elements 30R, 30G, 30B, the layer 18 including the light emitting layer in each of the organic light emitting elements 30R, 30G, 30B as shown in FIG. Is resonated between the reflective layer 162R, 162G, 162B of the lower electrode layers 16R, 16G, 16B and the upper electrode layer 19, so that the light causes multiple interference. Thereby, the half widths of the light ER, EG, and EB finally emitted from the organic light emitting elements 30R, 30G, and 30B are reduced, and the color purity is improved.

  Next, a method for manufacturing the organic EL display shown in FIGS. 1 to 3 will be described with reference to FIGS. 4 to 11 are for explaining a manufacturing process of a main part (lower electrode layers 16R, 16G, and 16B) of the organic EL display, and all show a cross-sectional configuration corresponding to FIG. Note that regions SR, SG, and SB illustrated in FIGS. 4 to 11 represent regions in which the organic light emitting elements 30R, 30G, and 30B are to be formed in subsequent processes, respectively.

  In the following, first, the manufacturing process of the entire organic EL display will be briefly described with reference to FIGS. 1 to 3, and then the manufacturing method of the organic light emitting device according to the present invention will be described with reference to FIGS. The formation process of the main part of the applied organic EL display will be described. Since the material, thickness and structural characteristics of a series of components in the organic EL display have already been described in detail, the description thereof will be omitted as appropriate.

  This organic EL display can be manufactured using an existing thin film process including a film forming technique such as sputtering, a patterning technique such as photolithography, and an etching technique such as dry etching and wet etching. That is, when manufacturing an organic EL display, first, as shown in FIG. 1, a plurality of TFTs 12 (TFTs 121 to 123) are patterned in a matrix on one surface of the driving substrate 11, and then the TFTs 121 to 123 and After the interlayer insulating layer 13 is formed so as to cover the peripheral driving substrate 11, two sets of wirings 14 are patterned for each of the TFTs 121 to 123. Subsequently, a planarizing layer 15 is formed so as to cover the wiring 14 and the surrounding interlayer insulating layer 13, thereby planarizing the underlying region in which the organic light emitting elements 30 R, 30 G, and 30 B will be formed in a later step. To do. Subsequently, a set of organic light emitting elements 30 (30R, 30G, 30B) is pattern-formed on the planarizing layer 15 corresponding to the positions where the TFTs 121 to 123 are disposed. Specifically, the organic EL element 30R is formed by laminating the lower electrode layer 16R, the layer 18 including the light emitting layer, and the upper electrode layer 19 in this order, and the lower electrode layer 16G, the layer 18 including the light emitting layer, and the upper electrode are formed. The organic light emitting element 30G is formed by laminating the layers 19 in this order, and the organic light emitting element 30B is formed by laminating the lower electrode layer 16B, the layer including the light emitting layer, and the upper electrode layer 19 in this order. When forming these organic light emitting elements 30R, 30G, and 30B, for example, as shown in FIG. 1, the organic light emitting elements 30R, 30G, and 30B are continuously extended via the lower electrode layers 16R, 16G, and 16B. The layer 18 including the light emitting layer and the upper electrode layer 19 are formed so as to be shared by the elements 30R, 30G, and 30B, and as shown in FIGS. 1 and 2, the lower electrode layers 16R, 16G, and 16B The adhesion layers 161R, 161G, and 161B constituting a part are formed and adhered to the driving substrate 11, more specifically, the planarization layer 15 provided so as to cover the driving substrate 11. Subsequently, the drive panel 10 is formed by forming the protective layer 20 so as to cover the upper electrode layer 19.

  Subsequently, a color filter 52 including a red region 52R, a green region 52G, and a blue region 52B corresponding to the organic light emitting elements 30R, 30G, and 30B is formed on one surface of the sealing substrate 51, whereby the sealing panel 50 is formed. Form.

  Finally, using the adhesive layer 60, the drive panel 10 and the sealing panel 50 are bonded so that the organic light emitting elements 30R, 30G, and 30B are sandwiched between the driving substrate 11 and the sealing substrate 51. Thus, an organic EL display is completed.

  When forming the lower electrode layers 16R, 16G, and 16B as the main part of the organic EL display, first, as shown in FIG. 4, for example, sputtering is used to form the driving substrate 11 shown in FIG. More specifically, an adhesion layer 161 (thickness = about 20 nm) and a lower electrode constituent layer 1621 (first lower electrode constituent layer) so as to cover the planarization layer 15 provided on the driving substrate 11. Thickness = about 100 nm), an upper electrode constituting layer 1631 as the first upper electrode constituting layer (thickness = about 1 nm to 20 nm), and a lower electrode constituting layer 1622 (thickness as the second lower electrode constituting layer) = About 100 nm), an upper electrode constituting layer 1632 as the second upper electrode constituting layer (thickness = about 20 nm to 60 nm), and an upper electrode constituting layer 1633 as the third upper electrode constituting layer (thickness = about 50 nm to 1 0 nm) and a are stacked to form in this order. The adhesion layer 161, the lower electrode constituent layers 1621 and 1622, and the upper electrode constituent layers 1631 to 1633 are all finally patterned using an etching process, so that each of the lower electrode layers 16R, 16G, and 16B. It is a preparation layer which will constitute a part of When forming the adhesion layer 161 and the upper electrode constituting layers 1631 to 1633, the metal, metal oxide, metal nitride, or metal compound described above is used as a forming material. For example, the adhesion layer 161 and the upper electrode constituting layer 1631 are used. , 1632 and ITO as the upper electrode constituent layer 1633. Further, when forming the lower electrode constituting layers 1621 and 1622, the above-described silver or an alloy containing silver is used as a forming material, for example, silver palladium copper alloy (AgPdCu) is used. In particular, when forming the upper electrode constituent layer 1632 made of ITO, for example, when the upper electrode constituent layer 1633 made of IZO is wet-etched in a later step, the upper electrode constituent layer 1632 stops the progress of the etching process. In order to function as a stop layer, the upper electrode constituent layer 1632 is formed at a high temperature or annealed after the formation to crystallize the ITO. When the adhesion layer 161, the lower electrode constituent layers 1621 and 1622, and the upper electrode constituent layers 1631 to 1633 are formed and stacked using sputtering, for example, these series of layers are placed in the same vacuum environment. Form continuously.

  When forming the upper electrode constituent layers 1631 to 1633, in particular, as described above with reference to FIG. 2, the three organic light emitting devices 30R, 30G, and 30B are white by utilizing the light interference phenomenon. The thicknesses of the upper electrode constituting layers 1631 to 1633 are set so that the resonance length necessary for converting light into three different colors of light ER, EG, and EB can be secured. Specifically, for example, the total thickness of the upper electrode constituent layers 1632 and 1633 is set so as to ensure a resonance length necessary for converting white light into red light ER in the organic light emitting element 30R, and organic light emission. The thickness of the upper electrode constituent layer 1632 is set so as to ensure a resonance length necessary for converting white light into green light EG in the element 30G, and white light is converted into blue light EB in the organic light emitting element 30B. The thickness of the upper electrode constituting layer 1631 is set so that the resonance length necessary for conversion can be ensured.

The formation conditions of the adhesion layer 161, the lower electrode constituent layers 1621 and 1622, and the upper electrode constituent layers 1631 to 1633 are, for example, as follows. That is, as the sputtering gas, a mixed gas in which 0.3% of oxygen (O ₂ ) is mixed with argon (Ar) is used to form the adhesion layer 161 and the upper electrode constituent layers 1631 and 1632, and the lower electrode structure is used. Argon gas is used to form the layers 1621 and 1622, and a mixed gas in which oxygen is mixed with 1.0% is used to form the upper electrode constituent layer 1633. Further, as sputtering conditions, in any case, pressure = 0.5 Pa and DC output = 500 W.

  Subsequently, after applying a photoresist on the upper electrode constituting layer 1633 to form a photoresist film (not shown), the photoresist film is patterned using a photolithography process, and the result is shown in FIG. Thus, the etching mask 71 as a first mask made of, for example, a photoresist film is patterned on the region SR as the first region in which the organic light emitting element 30R is to be formed in the upper electrode constituting layer 1633. Form.

Subsequently, by using wet etching together with the etching mask 71 and etching and patterning the upper electrode constituting layer 1633, the upper electrode constituting layer 1633 is covered with the etching mask 71 as shown in FIG. The portion other than the portion is selectively removed to leave the upper electrode constituent layer 1633 in the region SR and to expose the upper electrode constituent layer 1632 in the peripheral region of the region SR. When performing this wet etching process, as an etchant, for example, it exhibits a high etching property with respect to the upper electrode constituent layer 1633 made of IZO and a low etching property with respect to the upper electrode constituent layer 1632 made of crystallized ITO. Specifically, a mixed acid of phosphoric acid (H ₃ PO ₄ ), nitric acid (HNO ₃ ), and acetic acid (CH ₃ COOH), or oxalic acid (C ₂ H ₂ O ₄ ) is used. During the wet etching process, as described above, the upper electrode constituent layer 1632 having resistance to the etchant functions as a stop layer, and the progress of the etching process is stopped when the etching of the upper electrode constituent layer 1633 is completed. The etching process is prevented from reaching the upper electrode constituting layer 1632.

  Subsequently, as shown in FIG. 6, the exposed surface of the upper electrode constituting layer 1632 is made of, for example, a photoresist film on the region SG as the second region where the organic light emitting element 30G is to be formed. An etching mask 72 as a second mask is patterned. In forming the etching mask 72, for example, if necessary, the used etching mask 71 is once removed before the etching mask 72 is formed, and then the etching mask 71 is formed at the same time as the etching mask 71 is formed. To re-form.

  Subsequently, by using dry etching together with the etching masks 71 and 72, the lower electrode constituent layer 1622 and the upper electrode constituent layer 1632 are continuously etched and patterned, as shown in FIG. Etch 1632 to the end and etch the lower electrode constituent layer 1622 halfway. Thereafter, the lower electrode constituting layer 1622 is etched and patterned by using wet etching together with the etching masks 71 and 72, so that the lower electrode constituting layer 1622 is etched to the end as shown in FIG. The lower electrode constituent layer 1622 and the upper electrode constituent layer 1632 are left in SR and SG, and the upper electrode constituent layer 1631 is exposed in the peripheral region of these regions SR and SG. When performing this wet etching process, as an etchant, for example, it shows high etching property with respect to the lower electrode constituent layer 1622 made of silver samarium copper alloy and is low with respect to the upper electrode constituent layer 1631 made of crystallized ITO. What shows etching property is used, and specifically, a mixed acid of phosphoric acid, nitric acid and acetic acid is used. In this wet etching process, the upper electrode constituent layer 1631 having resistance to the etchant functions as a stop layer, and the etching process stops when the etching of the lower electrode constituent layer 1622 is completed. It is prevented that the upper electrode constituent layer 1631 is reached.

  Subsequently, as shown in FIG. 9, on the exposed surface of the upper electrode constituting layer 1631, a region SB as a third region where the organic light emitting element 30B is to be formed is made of, for example, a photoresist film. An etching mask 73 as a third mask is patterned. When the etching mask 73 is formed, for example, if necessary, the used etching masks 71 and 72 are once removed before the etching mask 73 is formed, and then the etching mask 73 is formed and etched at the same time. The masks 71 and 72 are formed again.

  Subsequently, by using dry etching together with the etching masks 71 to 73 and continuously etching and patterning the adhesion layer 161, the lower electrode constituting layer 1621 and the upper electrode constituting layer 1631, as shown in FIG. Of the adhesion layer 161, the lower electrode configuration layer 1621, and the upper electrode configuration layer 1631, a portion other than the portion covered with the etching masks 71 to 73 is selectively removed, and the adhesion layer 161 is formed in the regions SR, SG, and SB. The lower electrode constituent layer 1621 and the upper electrode constituent layer 1631 are left. By this etching process, the adhesion layer 161, the lower electrode constituting layers 1621 and 1622, and the upper electrode constituting layers 1631 to 1633 are separated for each of the regions SR, SG, and SB. Specifically, in the region SR, the adhesion layer 161, the lower portion The six-layer structure of the electrode configuration layer 1621, the upper electrode configuration layer 1631, the lower electrode configuration layer 1622, and the upper electrode configuration layers 1632 and 1633 remains, and in the region SG, the adhesion layer 161, the lower electrode configuration layer 1621, and the upper electrode configuration layer 1631 The five-layer structure of the lower electrode constituent layer 1622 and the upper electrode constituent layer 1632 remains, and the three-layer structure of the adhesion layer 161, the lower electrode constituent layer 1621, and the upper electrode constituent layer 1631 remains in the region SB. During the etching process, the etching masks 71 to 73 themselves are also etched, so that the thicknesses of the etching masks 71 to 73 are reduced.

  Finally, by removing the etching masks 71 to 73, as shown in FIG. 11, due to the remaining structure of the adhesion layer 161, the lower electrode constituting layers 1621 and 1622 and the upper electrode constituting layers 1631 to 1633 described above, FIG. The lower electrode layers 16R, 16G, and 16B shown in FIG. Specifically, in the region SR where the organic light emitting element 30R that emits the red light ER is to be formed, the lower electrode as the adhesion layer 161R, the lower electrode constituent layer 162R1, the upper electrode constituent layer 163R1, and the reflective layer 162R. The lower electrode layer 16R having a six-layer structure in which the constituent layer 162R2 and the upper electrode constituent layer 163R2 (lower barrier layer 163RX, upper barrier layer 163RY) as the barrier layer 163R are stacked in this order is formed. In the region SG where the organic light emitting element 30G that emits the green light EG is to be formed, the adhesion layer 161G, the lower electrode configuration layer 162G1, the upper electrode configuration layer 163G1, and the lower electrode configuration layer 162G2 as the reflection layer 162G. In addition, the lower electrode layer 16G having a five-layer structure in which the upper electrode constituting layer 163G2 as the barrier layer 163G is laminated in this order is formed. Further, in the region SB where the organic light emitting element 30B that emits the blue light EB is to be formed, the adhesion layer 161B, the lower electrode configuration layer 162B1 as the reflection layer 162B, and the upper electrode configuration layer 163B1 as the barrier layer 163B. A lower electrode layer 16B having a three-layer structure in which are stacked in this order is formed. At this time, the barrier layers 163R, 163G, and 163B of the lower electrode layers 16R, 16G, and 16B have different thicknesses between the regions SR, SG, and SB, and more specifically, the regions SR, SG, and SB. It is formed so as to become thinner in order.

  For reference, for example, the auxiliary wiring 40 shown in FIG. 2 can be formed in parallel through a procedure similar to the procedure for forming the organic light emitting element 30R by using the process for forming the lower electrode layer 16R described above. It is.

  In the organic EL display according to the present embodiment, as shown in FIGS. 1 and 2, the lower electrode layers 16R, 16G, and 16B of the organic light emitting elements 30R, 30G, and 30B are separated from the layer 18 including the light emitting layer. It includes a laminated structure in which reflective layers 162R, 162G, 162B and barrier layers 163R, 163G, 163B are laminated in order from the far side, and the laminating direction of the resonance end faces PR1, PG1, PB1 of these reflective layers 162R, 162G, 162B Are different from each other between the organic light emitting elements 30R, 30G and the organic light emitting element 30B, and the thicknesses DR, DG, DB of the barrier layers 163R, 163G, 163B (lower barrier layer 163RX, upper barrier layer 163RY) Are different from each other between the organic light emitting elements 30R, 30G, and 30B (DR DG> DB), for example, as described above for “operation of organic EL display”, light caused by a difference in resonance length between organic light emitting elements 30R, 30G, and 30B based on a difference between thicknesses DR, DG, and DB It is possible to convert the white light generated in the layer 18 including the light emitting layer into three colors of light, that is, red light ER, green light EG, and blue light EB, using the interference phenomenon of FIG. Therefore, in this embodiment, an image can be displayed using these three colors of light ER, EG, and EB.

  In particular, in the present embodiment, the display performance is different from the conventional organic EL display described in the section of “Background Art” on the basis of the structural features capable of constructing the display mechanism described above, as described below. It has advantages both in terms of surface and manufacturability.

  That is, in terms of manufacturability, in order to emit light of three colors (R, G, B), due to structural factors using three types of light emitting layers that can generate light of each color separately. Unlike the conventional organic EL display, which requires separate coating using a metal mask when depositing these three types of light emitting layers, as shown in FIG. 2 and FIG. In order to emit ER, EG, and EB, one type of light emitting layer 182 that can generate monochromatic light (white light) is used, that is, the light emitting layer 182 is shared between the organic light emitting elements 30R, 30G, and 30B. In addition, since it is not necessary to separately coat the light emitting layer 182 using a metal mask, the display size can be increased.

  On the other hand, in terms of display performance, after using a light-emitting layer that generates white light, white light is converted into three colors (R, G, B) using only a high-density and thick color filter for color conversion. Unlike the conventional organic EL display which has been converted to light, instead of performing color conversion using only the color filter, the thickness DR described above is used together with the color filter 52 as shown in FIGS. The white light is converted into three colors of light ER, EG, and EB by using the light interference phenomenon caused by the difference in resonance length between the organic light emitting devices 30R, 30G, and 30B based on the difference between DG, DB, and DG. Therefore, the color filter 52 can be low in concentration and thin. As a result, it is possible to prevent an increase in light use loss due to light absorption of the color filter 52 during color conversion, that is, to ensure light use efficiency.

  Therefore, in this embodiment, since it is possible to have advantages in both display performance and manufacturability, it is possible to ensure both display performance and manufacturability. In this case, in particular, on the manufacturing side, based on the point that the light-emitting layer 182 using a metal mask is not separately applied, it is possible to prevent the light-emitting layer 182 from being defective due to particles being mixed during the separate operation. can do.

  In the present embodiment, the organic light emitting elements 30R, 30G, and 30B include the reflective layers 162R, 162G, and 162B, respectively, and light is resonated between the reflective layers 162R, 162G, and 162B and the upper electrode layer 19. Since the resonance structure is provided, the color purity of the light ER, EG, and EB is improved as described above as “operation of the organic EL display”. Therefore, a high-quality spectrum with a high peak intensity and a narrow wavelength width can be ensured for each of the lights ER, EG, and EB, and an image excellent in color reproducibility can be displayed. In this case, in particular, if the reflective layers 162R, 162G, and 162B are configured using highly reflective silver or an alloy containing silver, the use efficiency of the resonated light is increased, and thus the display performance is further improved. be able to.

  In the present embodiment, the barrier layers 163R, 163G, and 163B serve to provide a difference in resonance length between the organic light emitting elements 30R, 30G, and 30B as described above, and also protect the reflective layers 162R, 162G, and 1621. The reflective layer 162R, 162G, 162B reacts with oxygen and sulfur components in the atmosphere to oxidize or corrode, or reacts with chemicals used during the manufacturing process of the organic EL display. Corrosion can be prevented.

  In the present embodiment, the lower electrode layers 16R, 16G, and 16B have adhesion layers 161R and 161G for improving the adhesion between the reflective layers 162R, 162G, and 162B and the barrier layers 163R, 163G, and 163B with respect to the planarization layer 15. , 161B, the lower electrode layers 16R, 16G, 16B can be firmly fixed to the planarizing layer 15.

  In this embodiment, since the barrier layers 163R, 163G, and 163B are configured using a material having a work function larger than that of the reflective layers 162R, 162G, and 162B, the amount of holes injected into the light emitting layer 182 is increased. Can be made.

  In the present embodiment, since the auxiliary wiring 40 is provided together with the three organic light emitting elements 30R, 30G, and 30B, the resistance between the three organic light emitting elements 30R, 30G, and 30B using the auxiliary wiring 40 is provided. The difference can be alleviated and the electrical state of each organic light emitting element 30R, 30G, 30B can be made substantially uniform.

  In the method of manufacturing the organic EL display according to the present embodiment, the positions of the resonance end faces PR1, PG1, and PB1 in the stacking direction of the reflective layers 162R, 162G, and 162B are the positions of the organic light emitting elements 30R and 30G and the organic light emitting element 30B. The lower electrode layers 16R, 16G, having a characteristic configuration in which the thicknesses of the barrier layers 163R, 163G, 163B are different from each other among the three organic light emitting devices 30R, 30G, 30B. In order to form 16B, only the existing thin film process is used, and a new and complicated manufacturing process is not used. In addition, the lower electrode layers 16R, 16G, and 16B can be continuously formed with good reproducibility using only the existing thin film process. Therefore, in the present embodiment, an organic EL display including the lower electrode layers 16R, 16G, and 16B can be easily and stably manufactured.

  In particular, in this embodiment, the upper electrode constituent layers 1631 to 1633 are formed using materials having different resistances to the etchant. Specifically, the etchant for wet etching the upper electrode constituent layer 1633 is used. The upper electrode constituent layer 1632 is formed using a material resistant to the upper electrode, and similarly, the upper electrode constituent layer 1632 using a material resistant to an etchant for wet etching the upper electrode constituent layer 1632 1631 is formed, the upper electrode constituent layer 1632 functions as a stop layer for stopping the etching process when the upper electrode constituent layer 1633 is etched, and similarly, when the upper electrode constituent layer 1632 is etched. In addition, the upper electrode constituting layer 1631 functions as a stop layer. Therefore, it is possible to prevent the etching process from reaching unnecessary portions, so that the lower electrode layers 16R, 16G, and 16B can be formed with high accuracy.

  In this embodiment, when the adhesion layer 161, the lower electrode constituent layers 1621 and 1622, and the upper electrode constituent layers 1631 to 1633 are formed and stacked using sputtering, these series of layers are identical to each other. Unlike the case of forming a series of these layers in a plurality of vacuum environments, that is, via a vacuum environment and an atmospheric pressure environment, the atmospheric pressure between each layer is formed because the layers are continuously formed in a vacuum environment. It is possible to prevent foreign substances in the environment from entering and keep the interface between the layers clean.

[Second Embodiment]
Next, a second embodiment of the present invention will be described.

  FIG. 12 shows a cross-sectional configuration of an organic EL display as a display device according to the present embodiment. FIG. 13 is an enlarged cross-sectional configuration of the organic light emitting elements 30R, 30G, and 30B and the auxiliary wiring 40 shown in FIG. Schematically. In FIG. 12 and FIG. 13, the same reference numerals are given to the same elements as those described in the first embodiment.

  The organic EL display according to the present embodiment has been described in the first embodiment except that the arrangement order of the organic light emitting elements 30R, 30G, and 30B and the configuration of the lower electrode layers 26R, 26G, and 26B are different. It has substantially the same configuration as the organic EL display (FIGS. 1 to 3).

  The arrangement order of the organic light emitting elements 30R, 30G, and 30B is different from, for example, the first embodiment (see FIG. 1) in which the organic light emitting elements 30R, 30G, and 30B are sequentially arranged from the right to the left. As shown in FIG. 12, the organic light emitting elements 30R, 30G, and 30B are arranged in order from the left to the right.

  The lower electrode layers 26R, 26G, and 26B of the organic light emitting elements 30R, 30G, and 30B are stacked with different total thicknesses as in the first embodiment, for example, as shown in FIGS. More specifically, it is configured to include a stacked structure in which the stacking unit U is repeated one or more times.

  The organic light emitting element 30B as the first organic light emitting element has, for example, a configuration in which a lower electrode layer 26B, a layer 18 including a light emitting layer, and an upper electrode layer 19 are stacked in this order from the side closer to the driving substrate 11. have. The lower electrode layer 16B includes, for example, three stack units U described above, that is, an adhesion layer 261B, a lower electrode constituent layer 262B1, and an upper electrode constituent layer 263B1 in order from the side far from the layer 18 including the light emitting layer. The lower electrode constituent layer 262B2, the upper electrode constituent layer 263B2, the lower electrode constituent layer 262B3, and the upper electrode constituent layer 263B3 are stacked, and the lower electrode constituent layers 262B1 to 262B3 are The upper layer (lower electrode constituent layer 262B3) is the “true reflection layer 262B”, and the uppermost layer (upper electrode constituent layer 263B3) among the upper electrode constituent layers 263B1 to 263B3 is the “true barrier layer 263B”. The constituent materials of the adhesive layer 261B, the lower electrode constituent layers 262B1 to 262B3, and the upper electrode constituent layers 263B1 to 263B3 are the adhesive layers 161B, the lower electrode constituent layers 162B1 and the upper electrode constituent layers described in the first embodiment. It is the same as the constituent material of 163B1.

  The organic light emitting element 30G as the second organic light emitting element has, for example, a configuration in which a lower electrode layer 26G, a layer 18 including a light emitting layer, and an upper electrode layer 19 are stacked in this order from the side closer to the driving substrate 11. have. The lower electrode layer 16G includes, for example, two of the above-described lamination units U, that is, in order from the side far from the layer 18 including the light emitting layer, the adhesion layer 261G, the lower electrode configuration layer 262G1, and the upper electrode configuration layer 263G1. The lower electrode constituent layer 262G2 and the upper electrode constituent layer 263G2 are stacked, and the uppermost layer (lower electrode constituent layer 262G2) of the lower electrode constituent layers 262G1 and 262G2 is “true reflective layer” 262G ”, and the uppermost layer (upper electrode configuration layer 263G2) of the upper electrode configuration layers 263G1 and 263G2 is the“ true barrier layer 263G ”. The constituent materials of the adhesive layer 261G, the lower electrode constituent layers 262G1, 262G2, and the upper electrode constituent layers 263G1, 263G2 are the adhesive layers 161G, the lower electrode constituent layers 162G1, 162G2, and the upper electrodes described in the first embodiment. The constituent materials are the same as those of the constituent layers 163G1 and 163G2.

  The organic light emitting device 30R as the third organic light emitting device has a configuration in which, for example, a lower electrode layer 26R, a layer 18 including a light emitting layer, and an upper electrode layer 19 are stacked in this order from the side closer to the driving substrate 11. have. The lower electrode layer 16R includes, for example, one stacking unit U described above, that is, in order from the side farther from the layer 18 including the light emitting layer, the adhesion layer 261R, the lower electrode configuration layer 262R1, and the upper electrode configuration layer 263R1 The lower electrode constituting layer 262R1 is a “true reflection layer 262R” and the upper electrode constituting layer 263R1 is a “true barrier layer 263R”. The constituent materials of the adhesive layer 261R, the lower electrode constituent layer 262R1, and the upper electrode constituent layer 263R1 are the adhesive layer 161R, the lower electrode constituent layers 162R1, 162R2, and the upper electrode constituent layer 163R1, which are described in the first embodiment. It is the same as the constituent material of 163R2.

  As shown in FIG. 13, the positions (heights) of the resonance end faces PB1, PG1, PR1 in the reflection layers 262B, 262G, 262R in the stacking direction (vertical direction in the drawing) are the three organic light emitting elements 30B, At least two of 30G and 30R are different from each other. Specifically, the positions of the resonance end faces PB1, PG1, and PR1 are different from each other between the organic light emitting elements 30B, 30R, and 30G, that is, the resonance end faces PR1, PG1, and PB1 are higher in order. Further, the thicknesses DB, DG, DR of the barrier layers 263B, 263G, 263R are different from each other among the three organic light emitting elements 30B, 30G, 30R, and specifically, the three organic light emitting elements 30B, 30G, 30R. Corresponding to the three colors of light EB, EG, ER emitted from the light source (DB <DG <DR).

  14 to 22 are for explaining a manufacturing process of the lower electrode layers 26B, 26G, and 26R in the organic EL display, and all show a cross-sectional configuration corresponding to FIG. 14 to 22, the same reference numerals are given to the same components as those described in the first embodiment.

  When forming the lower electrode layers 26B, 26G, and 26R, first, as shown in FIG. 14, for example, sputtering is used to form the driving substrate 11 shown in FIG. 12, more specifically, the driving substrate. 11, an adhesion layer 261 (thickness = about 20 nm), a lower electrode constituent layer 2621 (thickness = about 100 nm) as a first lower electrode constituent layer, An upper electrode constituting layer 2631 (thickness = about 50 nm to 200 nm) as a first upper electrode constituting layer, a lower electrode constituting layer 2622 (thickness = about 100 nm) as a second lower electrode constituting layer, and a second An upper electrode constituent layer 2632 (thickness = about 20 nm to 60 nm) as an upper electrode constituent layer, a lower electrode constituent layer 2623 (thickness = about 100 nm) as a third lower electrode constituent layer, and a third upper electrode As a constituent layer Upper electrode constituting layer 2633 (thickness: about 1 nm to 20 nm) and a are stacked to form in this order. The adhesion layer 261, the lower electrode constituent layers 2621 to 2623, and the upper electrode constituent layers 2631 to 2633 are all finally patterned using an etching process, so that one of the lower electrode layers 26B, 26G, and 26R is obtained. It is a preparatory layer that will constitute the part. When forming the adhesion layer 261 and the upper electrode constituting layers 2631 to 2633, the metal, metal oxide, metal nitride, or metal compound described in the first embodiment is used as a forming material. For example, ITO is used. use. When forming the lower electrode constituting layers 2621 to 2623, the silver or the alloy containing silver described in the first embodiment is used as a forming material, for example, a silver palladium copper alloy is used. In particular, when the upper electrode constituent layers 2631 and 2632 made of ITO are formed, for example, when the lower electrode constituent layers 2622 and 2623 made of silver samarium copper alloy are wet-etched in a later step, the upper electrode constituent layers 2631 The barrier layers 2631 and 2632 are formed at a high temperature or annealed after the film formation so that the ITO layer 2632 can function as a stop layer for stopping the progress of the etching process. When the adhesion layer 261, the lower electrode constituent layers 2621 to 2623, and the upper electrode constituent layers 2631 to 2633 are formed and stacked using sputtering, for example, these series of layers are formed in the same vacuum environment. Form continuously.

  When forming the upper electrode constituent layers 2631 to 2633, in particular, as described above with reference to FIG. 13, the three organic light-emitting elements 30B, 30G, and 30R utilize the light interference phenomenon to make white. The thicknesses of the upper electrode constituent layers 2631 to 2633 are set so that the resonance length necessary for converting light into three different colors of light EB, EG, and ER can be secured. The thickness of the upper electrode constituent layer 2633 is set so that the resonance length necessary for converting white light into blue light EB in the organic light emitting element 30B is set, and white light is converted into green light in the organic light emitting element 30G. The thickness of the upper electrode constituent layer 2632 is set so as to ensure the resonance length necessary for conversion into the light EG, and the resonance length necessary for converting white light into red light ER in the organic light emitting element 30R. Sure Setting the thickness of the upper electrode structure layer 2631 so as to.

  The formation conditions of the adhesion layer 261, the lower electrode constituent layers 2621 to 2623, and the upper electrode constituent layers 2631 to 2633 are, for example, as follows. That is, as the sputtering gas, in order to form the adhesion layer 261 and the upper electrode constituent layers 2631 to 2633, a mixed gas in which 0.3% of oxygen is mixed with argon is used, and the lower electrode constituent layers 2621 to 2623 are formed. Argon gas is used for this purpose. Moreover, as processing conditions of sputtering, in any case, pressure = 0.5 Pa and DC output = 500 W.

  Subsequently, as illustrated in FIG. 14, the first electrode made of, for example, a photoresist film is formed on the region SB as the first region in which the organic light emitting element 30 </ b> B is to be formed in the upper electrode constituting layer 2633. An etching mask 81 as a mask is patterned.

  Subsequently, by using dry etching together with the etching mask 81, the lower electrode constituting layer 2623 and the upper electrode constituting layer 2633 are continuously etched and patterned, so that the upper electrode constituting layer 2633 is formed as shown in FIG. While etching to the last, the lower electrode constituting layer 2623 is etched partway. Thereafter, the lower electrode constituting layer 2623 is etched by using wet etching together with the etching mask 81 and patterned to etch the lower electrode constituting layer 2623 to the end as shown in FIG. The lower electrode constituent layer 2623 and the upper electrode constituent layer 2633 are left, and the upper electrode constituent layer 2632 is exposed in the peripheral region of the region SB. When performing this wet etching process, as an etchant, for example, a high etching property is exhibited with respect to the lower electrode constituting layer 2623 made of silver samarium copper alloy, and is lower than an upper electrode constituting layer 2632 made of crystallized ITO. What shows etching property is used, and specifically, a mixed acid of phosphoric acid, nitric acid and acetic acid is used. In this wet etching process, the upper electrode constituent layer 2632 having resistance to the etchant functions as a stop layer, and the etching process stops when the etching of the lower electrode constituent layer 2623 is completed. It is prevented that the upper electrode constituting layer 2632 extends.

  Subsequently, as shown in FIG. 17, on the exposed surface of the upper electrode constituting layer 2632, a region SG as a second region where the organic light emitting element 30G is to be formed is made of, for example, a photoresist film. An etching mask 82 as a second mask is patterned. When forming the etching mask 82, for example, if necessary, the used etching mask 81 is once removed before forming the etching mask 82, and then the etching mask 82 is formed at the same time as the etching mask 81 is formed. To re-form.

  Subsequently, by using dry etching together with the etching masks 81 and 82, the lower electrode constituent layer 2622 and the upper electrode constituent layer 2632 are continuously etched and patterned, thereby forming the upper electrode constituent layer as shown in FIG. Etch 2632 to the end and etch the lower electrode constituent layer 2622 halfway. Thereafter, the lower electrode constituent layer 2622 is etched and patterned by using wet etching together with the etching masks 81 and 82, thereby etching the lower electrode constituent layer 2622 to the end as shown in FIG. The lower electrode constituting layer 2622 and the upper electrode constituting layer 2632 are left in the SB and SG, and the upper electrode constituting layer 2631 is exposed in the peripheral region of the regions SB and SG. When performing this wet etching process, for example, an etchant similar to that used when the lower electrode constituting layer 2623 is etched in the previous step is used. At the time of this wet etching process, the upper electrode constituent layer 2631 functions as a stop layer, so that the etching process is prevented from reaching the upper electrode constituent layer 2631.

  Subsequently, as shown in FIG. 20, on the exposed surface of the upper electrode constituting layer 2631, the region SR as the third region where the organic light emitting element 30R is to be formed is made of, for example, a photoresist film. An etching mask 83 as a third mask is patterned. When the etching mask 83 is formed, for example, if necessary, the used etching masks 81 and 82 are once removed before the etching mask 83 is formed, and then the etching mask 83 is formed and etched at the same time. The masks 81 and 82 are formed again.

  Subsequently, by using dry etching together with the etching masks 81 to 83 and continuously etching and patterning the adhesion layer 261, the lower electrode constituent layer 2621, and the upper electrode constituent layer 2631, as shown in FIG. Of the adhesion layer 261, the lower electrode configuration layer 2621, and the upper electrode configuration layer 2631, the portions other than the portions covered by the etching masks 81 to 83 are selectively removed, and the adhesion layers 261, 261, SB, The lower electrode constituent layer 2621 and the upper electrode constituent layer 2631 are left. During the etching process, the etching masks 81 to 83 themselves are also etched, so that the thickness of the etching masks 81 to 83 is reduced.

  Finally, by removing the etching masks 81 to 83, as shown in FIG. 22, due to the remaining structure of the adhesion layer 261, the lower electrode constituting layers 2621 and 2622, and the upper electrode constituting layers 2631 to 2633 described above, FIG. The lower electrode layers 26R, 26G, and 26B shown in FIG. Specifically, in the region SB where the organic light emitting element 30B that emits the blue light EB is to be formed, the adhesion layer 261B, the lower electrode constituent layer 262B1, the upper electrode constituent layer 263B1, the lower electrode constituent layer 262B2, The lower electrode layer 26B having a seven-layer structure in which the electrode configuration layer 263B2, the lower electrode configuration layer 262B3 as the reflection layer 262B, and the upper electrode configuration layer 263B3 as the barrier layer 263B are stacked in this order is formed. In the region SG where the organic light emitting element 30G that emits the green light EG is to be formed, the adhesion layer 261G, the lower electrode configuration layer 262G1, the upper electrode configuration layer 263G1, and the lower electrode configuration layer 262G2 as the reflection layer 262G. In addition, the lower electrode layer 26G having a five-layer structure in which the upper electrode constituting layer 263G2 as the barrier layer 263G is laminated in this order is formed. Further, in the region SR where the organic light emitting element 30R that emits red light ER is to be formed, the adhesion layer 261R, the lower electrode configuration layer 262R1 as the reflection layer 262R, and the upper electrode configuration layer 263R1 as the barrier layer 263R. A lower electrode layer 26R having a three-layer structure in which are stacked in this order is formed. At this time, the barrier layers 263B, 263G, 263R of the lower electrode layers 26B, 26G, 26R have different thicknesses between the regions SB, SG, SR, more specifically, the regions SB, SG, SR. It is formed to become thicker in order.

  For reference, for example, the auxiliary wiring 40 shown in FIG. 13 is formed in parallel through the same procedure as the formation procedure of the organic light emitting element 30B using the formation process of the lower electrode layer 26B described above. Is possible.

  In the organic EL display according to the present embodiment, as shown in FIGS. 12 and 13, the positions of the resonance end faces PB1, PG1, and PR1 in the stacking direction of the reflective layers 262B, 262G, and 262R are three organic light emitting elements. 30B, 30G, and 30R are different from each other, and the thicknesses DB, DG, and DR of the barrier layers 263B, 263G, and 263R are different from each other between the organic light emitting elements 30B, 30G, and 30R (DB <DG <DR ) By the same operation as the first embodiment described above, it becomes possible to convert the white light generated in the layer 18 including the light emitting layer into three colors of light EB, EG, ER and display an image. It is possible to ensure both display performance and manufacturability.

  Further, in the method of manufacturing the organic EL display according to the present embodiment, the positions of the resonance end faces PB1, PG1, and PR1 in the stacking direction of the reflective layers 262B, 262G, and 262R are between the three organic light emitting elements 30R, 30G, and 30B. And the lower electrode layers 26R, 26G, and 26B having a characteristic configuration in which the thicknesses of the barrier layers 263B, 263G, and 263R are different from each other among the three organic light emitting devices 30R, 30G, and 30B. Since only the existing thin film process is used to form the lower electrode layers 26R, 26G, and 26B using only the existing thin film process, it is possible to continuously form the organic layer. An EL display can be manufactured easily and stably.

  The configuration, function, operation, action, and effect other than the above regarding the organic EL display according to the present embodiment and the other processes regarding the method of manufacturing the organic EL display are the same as those in the first embodiment. .

  As described above, the present invention has been described with reference to some embodiments. However, the present invention is not limited to the above-described embodiments, and as long as the same effects as those embodiments can be obtained. Can be freely deformed.

  Specifically, for example, in each of the above embodiments, as shown in FIG. 3, in order to generate white light in the light emitting layer 182, the light emitting layer 182 is changed into a red light emitting layer 182R, a green light emitting layer 182G, and a blue light emitting layer 182G. The three-layer structure in which the light-emitting layer 182B is stacked is used. However, the structure is not necessarily limited thereto, and the structure of the light-emitting layer 182 can be freely changed as long as white light can be generated. Examples of the structure other than the above three-layer structure related to the light emitting layer 182 include (1) a single layer structure using a white light emitting material capable of generating white light, and (2) a red light emitting material, a green light emitting material, and a blue color. A single layer structure using a mixed material in which light emitting materials are mixed, or (3) a mixed light emitting layer made of a mixed material in which red light emitting material and green light emitting material are mixed, and a green light emitting material and a blue light emitting material are mixed. Examples thereof include a two-layer structure in which another mixed light emitting layer made of a mixed material is stacked. In any of these cases, the same effects as those of the above embodiments can be obtained.

  In each of the above embodiments, white light is generated in the light emitting layer 182. However, the present invention is not necessarily limited to this. For example, the difference in resonance length between the organic light emitting elements 30R, 30G, and 30B is obtained. As long as the light generated in the light emitting layer 182 can be converted into the three colors of light ER, EG, and EB, the color of the light generated in the light emitting layer 182 can be freely changed. Even in this case, the same effects as those of the above embodiments can be obtained.

  In each of the above embodiments, the element having the largest total thickness among the three organic light emitting elements 30R, 30G, and 30B, specifically, the organic light emitting element 30R in the first embodiment, or the second embodiment. In the embodiment, the auxiliary wiring 40 is configured to have substantially the same structure as the organic light emitting element 30B. However, the auxiliary wiring 40 is not necessarily limited to this, and the three organic light emitting elements 30R, 30G, and 30B using the auxiliary wiring 40 are not necessarily limited thereto. As long as it is possible to reduce the resistance difference between them, the configuration of the auxiliary wiring 40 can be freely changed. For example, in the first embodiment (see FIG. 2), for example, the upper barrier layer 163RY in the barrier layer 163R is made of an insulating material, and therefore, the insulating upper barrier layer 163RY is used. When the resistance of the auxiliary wiring 40 having the same structure as that of the organic light emitting element 30R, more specifically, the junction resistance with the upper electrode layer 19 is increased due to the presence of the organic light emitting element 30R, the organic light emitting element The auxiliary wiring 40 may be configured to have substantially the same structure as the organic light emitting element 30G or 30B instead of 30R. Also in this case, if the resistance of the organic light emitting elements 30G and 30B is lower than that of the organic light emitting element 30R, three organic light emitting elements are utilized by using the auxiliary wiring 40 having the same structure as those organic light emitting elements 30G or 30B. The resistance difference between 30R, 30G, and 30B can be reduced.

  In each of the above embodiments, DR> DG between the thicknesses DR, DG, and DB of the barrier layers 163R, 163G, and 163B (or 263R, 263G, and 263B) constituting the organic light emitting elements 30R, 30G, and 30B. Although the case where the relation of> DB is established has been described, the present invention is not necessarily limited to this, and the thickness DR, DG, and DB can be used as long as the same effects as those of the above embodiments can be obtained. The relationship can be freely changed. If this point is described in more detail, the relationship DR> DG> DB described in each of the above embodiments is expressed as mR = mG between mR, mG, and mB in a series of mathematical expressions (Equations 2 to 4). = MB (for example, mR = mG = mB = 0) is established, and depending on the setting of these mR, mG, and mB values, the relationship between the thicknesses DR, DG, and DB Can change. For example, when a relationship of mR (= mG) ≠ mB (for example, mR = mG = 0, mB = 1) is established between mR, mG, and mB, the thicknesses DR, DG , DB> DR> DG is established.

  In each of the above embodiments, the case where the organic light-emitting device of the present invention is applied to an organic EL display as a display device has been described. However, the present invention is not necessarily limited thereto. You may make it apply to other display apparatuses other than an organic electroluminescent display. Of course, the organic light-emitting device of the present invention can also be applied to devices other than the display device, for example. Examples of the “device other than the display device” include a lighting device. In these cases, the same effects as those of the above embodiments can be obtained.

  The organic light emitting device and the manufacturing method thereof according to the present invention and the display device including the organic light emitting device can be applied to, for example, an organic EL display and a manufacturing method thereof.

It is sectional drawing showing the cross-sectional structure of the organic electroluminescent display (top emission type) which concerns on the 1st Embodiment of this invention. It is sectional drawing which expands and represents typically the cross-sectional structure of the organic light emitting element and auxiliary wiring which were shown in FIG. FIG. 3 is a cross-sectional view schematically illustrating an enlarged cross-sectional configuration of a layer including a light emitting layer illustrated in FIG. 2. It is sectional drawing for demonstrating the manufacturing process of the organic electroluminescent display which concerns on the 1st Embodiment of this invention. FIG. 5 is a cross-sectional view for explaining a step following the step in FIG. 4. FIG. 6 is a cross-sectional view for explaining a step following the step in FIG. 5. FIG. 7 is a cross-sectional view for explaining a step following the step in FIG. 6. FIG. 8 is a cross-sectional view for explaining a step following the step in FIG. 7. FIG. 9 is a cross-sectional view for explaining a step following the step in FIG. 8. FIG. 10 is a cross-sectional view for explaining a step following the step in FIG. 9. It is sectional drawing for demonstrating the process following FIG. It is sectional drawing showing the cross-sectional structure of the organic electroluminescent display (top emission type) which concerns on the 2nd Embodiment of this invention. It is sectional drawing which expands and represents typically the cross-sectional structure of the organic light emitting element and auxiliary wiring which were shown in FIG. It is sectional drawing for demonstrating the manufacturing process of the organic electroluminescent display which concerns on the 2nd Embodiment of this invention. It is sectional drawing for demonstrating the process following FIG. FIG. 16 is a cross-sectional view for illustrating a process following the process in FIG. 15. FIG. 17 is a cross-sectional view for illustrating a process following the process in FIG. 16. FIG. 18 is a cross-sectional view for explaining a process following the process in FIG. 17. It is sectional drawing for demonstrating the process following FIG. FIG. 20 is a cross-sectional view for explaining a process following the process in FIG. 19. FIG. 21 is a cross-sectional view for illustrating a process following the process in FIG. 20. FIG. 22 is a cross-sectional view for illustrating a process following the process in FIG. 21.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Drive panel, 11 ... Driving substrate, 12 (121-123) ... TFT, 13 ... Interlayer insulation layer, 14 ... Wiring, 15 ... Planarization layer, 16R, 16G, 16B, 26R, 26G, 26B ... Lower electrode Layer, 17 ... insulating layer in the layer, 18 ... layer including the light emitting layer, 19 ... upper electrode layer, 20 ... protective layer, 30 (30B, 30G, 30R) ... organic light emitting element, 40 ... auxiliary wiring, 50 ... sealing Panel: 51 ... Substrate for sealing, 52 ... Color filter, 52R ... Red region, 52G ... Green region, 52B ... Blue region, 60 ... Adhesive layer, 71-73, 81-83 ... Etching mask, 161, 161R, 161G , 161B, 261, 261R, 261G, 261B ... adhesion layer, 162R, 162G, 162B, 262R, 262G, 262B ... reflection layer, 163R, 163G, 163B, 263R 263G, 263B ... barrier layer, 162R1, 162R2, 162G1, 162G2, 162B1, 262R1, 262G1, 262G2, 262B1, 262B2, 262B3 ... lower electrode constituent layer, 163R1, 163R2, 163G1, 163G2, 163B1, 263R1, 263G1, 263G2, 263B1, 263B2, 263B3 ... upper electrode constituent layer, 163RX ... lower barrier layer, 163RY ... upper barrier layer, 181 ... hole transport layer, 182 ... light emitting layer, 182R ... red light emitting layer, 182G ... green light emitting layer, 182B ... blue Light emitting layer, 183 ... electron transport layer, DR, DG, DB, HR, HG, HB ... thickness, E ... light (light for image display), ER ... red light, EG ... green light, EB ... blue , LR, LG, LB ... optical distance, PR1, PR2, P 1, PG2, PB1, PB2 ... end face (PR1, PG1, PB1 ... resonance end face), SB, SG, SR ... area, U ... multilayer unit.

Claims (40)

Three organic light emitting devices having a configuration in which a first electrode layer, a layer including a light emitting layer, and a second electrode layer are laminated, and converting and emitting light generated in the light emitting layer into three different colors of light With
The first electrode layer includes, in order from the side far from the layer including the light emitting layer, a reflective layer having a resonance end surface for resonating light generated in the light emitting layer with the second electrode layer; Including a laminated structure in which a barrier layer for protecting the reflective layer is laminated;
The position of the resonance end face in the stacking direction of the reflective layer is different between at least two of the three organic light emitting elements,
The thickness of the said barrier layer is mutually different between the said three organic light emitting elements. The organic light emitting device characterized by the above-mentioned. The first electrode layer has a laminated unit in which a lower electrode constituent layer and an upper electrode constituent layer are laminated in order from a side far from the layer including the light emitting layer, and this laminated unit is repeated one or more times. It is configured to include a laminated structure,
The organic light emitting device according to claim 1, wherein an uppermost layer of the lower electrode constituent layers is the reflective layer, and an uppermost layer of the upper electrode constituent layers is the barrier layer. The organic light-emitting device according to claim 1, wherein the thickness of the layer including the light-emitting layer is equal between the three organic light-emitting elements. The organic light emitting device according to claim 1, wherein the layer including the light emitting layer is an organic layer. The organic light-emitting device according to claim 1, wherein the light-emitting layer generates light of the same color between the three organic light-emitting elements. The light emitting layer includes a red light emitting layer that generates red light, a green light emitting layer that generates green light, and a blue light emitting layer that generates blue light in order from the side closer to the first electrode layer. The organic light-emitting device according to claim 1, wherein the organic light-emitting device has a stacked configuration. 2. The organic light emitting device according to claim 1, wherein the barrier layers have different thicknesses corresponding to the three colors of light emitted from the three organic light emitting elements. The thickness of the barrier layer is set so that the light generated in the light emitting layer by the three organic light emitting elements can be converted into red light, green light, and blue light, respectively, and emitted. The organic light-emitting device according to claim 7. The first electrode layer includes two stacked units in each of the first and second organic light emitting elements of the three organic light emitting elements, and includes the three organic light emitting elements. The third organic light emitting device is configured to include one of the stacked units,
The first, second, and third organic light emitting elements convert light generated in the light emitting layer into red light, green light, and blue light, respectively.
The positions of the resonance end faces in the stacking direction coincide with each other between the first and second organic light emitting elements, and between the first and second organic light emitting elements and the third organic light emitting element. Are different from each other,
The organic light-emitting device according to claim 2, wherein the barrier layer has a thickness that decreases in the order of the first, second, and third organic light-emitting elements. And an auxiliary wiring that is electrically connected to the second electrode layer and relaxes a difference in resistance between the three organic light emitting elements,
The organic light-emitting device according to claim 9, wherein the auxiliary wiring includes the same stacked structure as the first electrode layer of the first organic light-emitting element. The first electrode layer includes three, two, and one of the stacked units in the first, second, and third organic light emitting elements among the three organic light emitting elements,
The first, second, and third organic light emitting elements convert light generated in the light emitting layer into blue light, green light, and red light, respectively.
The position of the resonance end face in the stacking direction is different between the first, second and third organic light emitting elements,
The organic light-emitting device according to claim 2, wherein the barrier layer has a thickness that increases in the order of the first, second, and third organic light-emitting elements. And an auxiliary wiring that is electrically connected to the second electrode layer and relaxes a difference in resistance between the three organic light emitting elements,
The organic light-emitting device according to claim 11, wherein the auxiliary wiring includes the same stacked structure as the first electrode layer of the first organic light-emitting element. The organic light emitting device according to claim 1, wherein the thickness of the barrier layer is in a range of 1 nm to 200 nm. The barrier layer includes indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga), and aluminum (Al). The organic light-emitting device according to claim 1, wherein the organic light-emitting device is made of a light transmissive material containing at least one metal, an alloy of the metal, a metal oxide, or a metal nitride thereof. The barrier layer includes indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), and oxide. _{2. The} light-transmitting material comprising at least one metal oxide selected from the group comprising cadmium (CdO), titanium oxide (TiO ₂ ) and chromium oxide (CrO ₂ ). The organic light-emitting device described. The organic light emitting device according to claim 1, wherein the barrier layer is made of a material having a work function larger than that of the reflective layer. The organic light emitting device according to claim 1, wherein the reflective layer is made of silver (Ag) or an alloy containing silver. The reflective layer, together with silver (Ag), palladium (Pd), neodymium (Nd), samarium (Sm), yttrium (Y), cerium (Ce), europium (Eu), gadolinium (Gd), terbium (Tb) And dysprosium (Dy), erbium (Er), ytterbium (Yb), scandium (Sc), ruthenium (Ru), copper (Cu) and gold (Au). The organic light-emitting device according to claim 1, wherein Furthermore, a base for supporting the three organic light emitting elements is provided,
The organic light-emitting device according to claim 1, wherein the first electrode layer further includes an adhesion layer for improving adhesion between the reflective layer and the barrier layer with respect to the substrate. The adhesion layer is made of chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), gallium (Ga) and molybdenum (Mo). The organic light-emitting device according to claim 19, wherein the organic light-emitting device includes at least one metal selected from the group including a metal alloy, a metal oxide, or a metal nitride thereof. The substrate is provided with a planarizing layer for planarizing a base region in which the three organic light emitting elements are disposed,
The organic light emitting device according to claim 19, wherein the adhesion layer is for improving adhesion to the planarization. 2. The organic light emitting device according to claim 1, wherein an optical distance L between the reflective layer and the second electrode layer satisfies the relationship of the following formula 1.
(Equation 1)
(2L) / λ + Φ / (2π) = m
(Wherein, L, λ, Φ, m, L is a reflective layer (first end face adjacent to the barrier layer of the reflective layer) and a second electrode layer (light emitting layer of the second electrode layer) Is the optical wavelength between the second end face adjacent to the layer containing λ, λ is the peak wavelength of the spectrum of the light desired to be emitted, Φ is the reflective layer (first end face) and the second electrode layer (second end face) The phase shift of the reflected light generated at the end face), m represents 0 or an integer, respectively.) The three organic light-emitting elements resonate light generated in the light-emitting layer between the reflective layer and the second electrode layer, and then pass the light of the three colors through the second electrode layer. The organic light-emitting device according to claim 1, wherein 24. The organic light emitting device according to claim 23, wherein the thickness of the reflective layer is in the range of 100 nm to 300 nm, and the thickness of the second electrode layer is in the range of 1 nm to 20 nm. Three organic light emitting devices having a configuration in which a first electrode layer, a layer including a light emitting layer, and a second electrode layer are laminated, and converting and emitting light generated in the light emitting layer into three different colors of light A method for manufacturing an organic light emitting device comprising:
A reflective layer having a resonance end surface for resonating light generated in the light emitting layer with the second electrode layer in order from the side far from the layer including the light emitting layer, and for protecting the reflective layer Including a step of forming the first electrode layer so as to include a stacked structure in which a barrier layer is stacked;
The position in the stacking direction of the resonance end face of the reflective layer is different between at least two of the three organic light emitting elements, and
The method of manufacturing an organic light emitting device, wherein the thickness of the barrier layer is different between the three organic light emitting elements. In order to include a laminated unit in which a lower electrode constituent layer and an upper electrode constituent layer are laminated in order from a side far from a layer including the light emitting layer, and the laminated unit includes a laminated structure in which one or two or more are repeated. Forming a first electrode layer;
26. The method of manufacturing an organic light emitting device according to claim 25, wherein an uppermost layer of the lower electrode constituent layers is the reflective layer, and an uppermost layer of the upper electrode constituent layers is the barrier layer. The step of forming the first electrode layer includes:
A first lower electrode constituent layer, a first upper electrode constituent layer, a second lower electrode constituent layer, a second upper electrode constituent layer, and a third upper electrode constituent layer are formed in this order. A step of laminating;
A step of patterning a first mask on a first region of the third upper electrode constituent layer in which the first organic light emitting element of the three organic light emitting elements is to be formed; ,
Using the first mask, the third upper electrode constituent layer is etched and patterned to leave the third upper electrode constituent layer in the first region, and the first region. Exposing the second upper electrode constituent layer to a peripheral region of
Of the exposed surface of the second upper electrode constituent layer, a second mask is patterned on the second region where the second organic light emitting element of the three organic light emitting elements is to be formed. And a process of
Using the first and second masks, the second lower electrode constituent layer and the second upper electrode constituent layer are continuously etched and patterned to form the first and second regions. Leaving the second lower electrode constituent layer and the second upper electrode constituent layer, respectively, and exposing the first upper electrode constituent layer in a peripheral region of the first and second regions;
On the exposed surface of the first upper electrode constituent layer, a third mask is pattern-formed on the third region where the third organic light emitting element of the three organic light emitting elements is to be formed. And a process of
Using the first, second and third masks, the first lower electrode constituent layer and the first upper electrode constituent layer are successively etched and patterned to thereby form the first and second masks. And leaving the first lower electrode constituent layer and the first upper electrode constituent layer in the third region, respectively,
The first electrode layer;
In the first region, the first lower electrode constituent layer, the first upper electrode constituent layer, the second lower electrode constituent layer as the reflective layer, and the second upper part as the barrier layer An electrode constituent layer and the third upper electrode constituent layer are formed so as to include a stacked structure in which they are stacked in this order,
In the second region, the first lower electrode constituent layer, the first upper electrode constituent layer, the second lower electrode constituent layer as the reflective layer, and the second upper part as the barrier layer The electrode configuration layer is formed so as to include a stacked structure in which layers are stacked in this order,
In the third region, the first lower electrode constituting layer as the reflective layer and the first upper electrode constituting layer as the barrier layer are formed so as to include a laminated structure laminated in this order. 27. The method of manufacturing an organic light emitting device according to claim 26. Forming the first upper electrode constituent layer using a material having resistance to an etchant for wet etching the second lower electrode layer;
In the step of etching the second lower electrode constituent layer and the second upper electrode constituent layer, the second upper electrode constituent layer is etched to the end using dry etching and the second lower electrode constituent layer is etched. 28. The method of manufacturing an organic light emitting device according to claim 27, wherein the second lower electrode constituent layer is etched to the end using wet etching after the layer is etched partway. The thickness of the barrier layer is reduced in this order in the first, second and third regions;
28. The method of manufacturing an organic light-emitting device according to claim 27, wherein the first, second, and third organic light-emitting elements emit red light, green light, and blue light, respectively. The step of forming the first electrode layer includes:
The first lower electrode constituent layer, the first upper electrode constituent layer, the second lower electrode constituent layer, the second upper electrode constituent layer, the third lower electrode constituent layer, and the third upper electrode Forming and laminating the constituent layers in this order; and
A step of patterning a first mask on a first region of the third upper electrode constituent layer in which the first organic light emitting element of the three organic light emitting elements is to be formed; ,
Using the first mask, the third lower electrode constituting layer and the third upper electrode constituting layer are successively etched and patterned to form the third lower electrode in the first region. Leaving the component layer and the third upper electrode component layer, and exposing the second upper electrode component layer in a peripheral region of the first region;
Of the exposed surface of the second upper electrode constituent layer, a second mask is patterned on the second region where the second organic light emitting element of the three organic light emitting elements is to be formed. And a process of
Using the first and second masks, the first and second regions are formed by successively etching and patterning the second lower electrode constituent layer and the second upper electrode constituent layer. Leaving the second lower electrode constituting layer and the second upper electrode constituting layer in the step, and exposing the first upper electrode constituting layer in a peripheral region of the first and second regions, respectively. ,
A step of patterning a third mask on a third region of the first upper electrode constituent layer on which a third organic light emitting element of the three organic light emitting elements is to be formed; ,
Using the first, second and third masks, the first lower electrode constituent layer and the first upper electrode constituent layer are successively etched and patterned to thereby form the first and second masks. And leaving the first lower electrode constituent layer and the first upper electrode constituent layer in the third region, respectively,
The first electrode layer;
In the first region, the first lower electrode constituent layer, the first upper electrode constituent layer, the second lower electrode constituent layer, the second upper electrode constituent layer, the first upper electrode constituent layer, and the reflection layer as the first layer. The lower electrode constituting layer 3 and the third upper electrode constituting layer as the barrier layer so as to include a laminated structure laminated in this order,
In the second region, the first lower electrode constituent layer, the first upper electrode constituent layer, the second lower electrode constituent layer as the reflective layer, and the second upper part as the barrier layer The electrode configuration layer is formed so as to include a stacked structure in which layers are stacked in this order,
In the third region, the first lower electrode constituting layer as the reflective layer and the first upper electrode constituting layer as the barrier layer are formed so as to include a laminated structure laminated in this order. 27. The method of manufacturing an organic light emitting device according to claim 26. The first upper electrode constituent layer is formed using a material resistant to an etchant for wet etching the second lower electrode layer, and the third lower electrode constituent layer is wet etched. Forming the second upper electrode configuration using a material resistant to an etchant for
In the step of etching the second lower electrode constituent layer and the second upper electrode constituent layer, and the third lower electrode constituent layer and the third upper electrode constituent layer, respectively, using dry etching, The second or third upper electrode constituent layer is etched to the end and the second or third lower electrode constituent layer is etched halfway, and then the second or third lower electrode constituent is formed using wet etching. 31. The method of manufacturing an organic light emitting device according to claim 30, wherein the layer is etched to the end. The thickness of the barrier layer is increased in this order in the first, second and third regions;
31. The method of manufacturing an organic light emitting device according to claim 30, wherein the first, second and third organic light emitting elements emit blue light, green light and red light, respectively. At least one metal selected from the group comprising indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), chromium (Cr), gallium (Ga) and aluminum (Al) 26. The method of manufacturing an organic light emitting device according to claim 25, wherein the barrier layer is formed using a light transmissive material containing an alloy of the metal, a metal oxide, or a metal nitride thereof. Indium tin oxide (ITO), indium zinc oxide (IZO), indium oxide (In ₂ O ₃ ), tin oxide (SnO ₂ ), zinc oxide (ZnO), cadmium oxide (CdO), The light-transmitting material containing at least one metal oxide of the group containing titanium oxide (TiO ₂ ) and chromium oxide (CrO ₂ ) is used to form the barrier layer. 25. A method for producing an organic light emitting device according to 25. The method for manufacturing an organic light-emitting device according to claim 25, wherein the reflective layer is formed using silver (Ag) or an alloy containing silver. Along with silver (Ag), palladium (Pd), neodymium (Nd), samarium (Sm), yttrium (Y), cerium (Ce), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy) The reflective layer includes at least one metal selected from the group consisting of erbium (Er), ytterbium (Yb), scandium (Sc), ruthenium (Ru), copper (Cu), and gold (Au). 26. The method of manufacturing an organic light emitting device according to claim 25, wherein the organic light emitting device is formed. In the step of forming the first electrode layer, an adhesion layer for improving the adhesion of the reflective layer and the barrier layer to the substrate is further formed on the substrate for supporting the three organic light emitting devices. 26. The method of manufacturing an organic light emitting device according to claim 25. Of the group comprising chromium (Cr), indium (In), tin (Sn), zinc (Zn), cadmium (Cd), titanium (Ti), aluminum (Al), gallium (Ga) and molybdenum (Mo) The method for manufacturing an organic light-emitting device according to claim 37, wherein the adhesion layer is formed so as to include at least one kind of metal, an alloy of the metal, a metal oxide, or a metal nitride thereof. Furthermore, the method includes a step of forming a planarization layer for planarizing a base region where the three organic light emitting elements are to be formed on the substrate,
The method for manufacturing an organic light-emitting device according to claim 37, wherein the adhesion layer is formed on the underlayer. The first electrode layer, the layer including the light emitting layer, and the second electrode layer are stacked, and the light generated in the light emitting layer is converted into light of three different colors and emitted to display an image. A display device comprising three organic light emitting elements,
The first electrode layer includes, in order from the side far from the layer including the light emitting layer, a reflective layer having a resonance end surface for resonating light generated in the light emitting layer with the second electrode layer; Including a laminated structure in which a barrier layer for protecting the reflective layer is laminated;
The position of the resonance end face in the stacking direction of the reflective layer is different between at least two of the three organic light emitting elements,
The thickness of the said barrier layer is mutually different between the said three organic light emitting elements. The display apparatus characterized by the above-mentioned.

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