JP2005082793A - Polyphenylene ether-based resin composition, method for producing the same, and electronic circuit board given by using the same - Google Patents

Polyphenylene ether-based resin composition, method for producing the same, and electronic circuit board given by using the same Download PDF

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JP2005082793A
JP2005082793A JP2003319859A JP2003319859A JP2005082793A JP 2005082793 A JP2005082793 A JP 2005082793A JP 2003319859 A JP2003319859 A JP 2003319859A JP 2003319859 A JP2003319859 A JP 2003319859A JP 2005082793 A JP2005082793 A JP 2005082793A
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polyphenylene ether
resin composition
substrate
based resin
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Tomohiro Sogabe
智浩 曽我部
Shigeki Yanagida
茂樹 柳田
Ikuka Chiba
郁華 千葉
Toru Yamada
徹 山田
Taketo Ikeno
建人 池野
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TDK Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a polyphenylene ether-based resin composition having a low dielectric loss tangent, a high Q value, and a low dielectric constant in a high frequency band, to provide a method for producing the same, and to provide an electronic circuit board given by using the polyphenylene ether-based resin composition and capable of realizing high-speed communication of electronic equipment and information communication equipment, downsizing and weight saving thereof, large-amount high-speed processing of information, etc. <P>SOLUTION: This polyphenylene ether-based resin composition contains a polyphenylene ether-based resin having repeating units expressed by general formula (I) (R<SP>1</SP>and R<SP>2</SP>are each an alkyl or an aryl) as a main component and has a chloride ion content of ≤1500 ppm. The method for producing the composition and the electronic circuit board which is given by using the composition are provided, respectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、高周波帯域における低誘電正接、高Q値及び低誘電率を有する、ポリフェニレンエーテル系樹脂を主成分とするポリフェニレンエーテル系樹脂組成物およびその製造方法に関する。また、本発明は、このポリフェニレンエーテル系樹脂組成物を使用した電子回路用基板に関する。   The present invention relates to a polyphenylene ether-based resin composition mainly composed of a polyphenylene ether-based resin having a low dielectric loss tangent, a high Q value and a low dielectric constant in a high frequency band, and a method for producing the same. Moreover, this invention relates to the board | substrate for electronic circuits which uses this polyphenylene ether-type resin composition.

近年、情報通信のブロードバンド化、情報端末のモバイル/ワイヤレス化に伴い、電子機器、情報通信機器に対する高速通信化、小型軽量化、情報の高速大量処理等が強く要求されている。デジタル携帯電話をはじめとする携帯移動体通信、衛星通信などではメガヘルツ(MHz)からギガヘルツ(GHz)の高周波帯域の電波が使用されており、これらの通信手段として使用されている情報通信機器では、筐体、回路基板及び電子部品の小型化、高密度実装化等が図られている。これに伴い、電子機器、情報通信機器に使用される回路基板用材料にも一層の性能向上が要求されている。   In recent years, with the trend toward broadband information communication and mobile / wireless information terminals, there is a strong demand for high-speed communication, downsizing and weight reduction, high-speed mass processing of information, and the like for electronic devices and information communication devices. Radio waves in the high frequency band from megahertz (MHz) to gigahertz (GHz) are used in portable mobile communications such as digital mobile phones, satellite communications, etc. In information communication equipment used as these communication means, Cases, circuit boards, and electronic components are being downsized and mounted with high density. Along with this, further performance improvement is required for circuit board materials used in electronic equipment and information communication equipment.

高周波帯域における回路基板用材料として要求される特性としては、用途に応じて、低誘電率かつ低誘電正接であること、又は高誘電率かつ低誘電正接であることが挙げられる。低誘電率化は、伝搬信号の高速化、信号伝送損失の抑制、配線板の薄型化、寄生容量の抑制などの要求に対して必要とされ、一方、高誘電率化は、基板の小型化、配線パターンの細密化、コンデンサ機能の内蔵などの要求に対して必要とされる。また、低誘電正接化及び高Q値化は、信号伝送損失の抑制などの要求に対して必要とされる。   The characteristics required as a circuit board material in a high frequency band include a low dielectric constant and a low dielectric loss tangent, or a high dielectric constant and a low dielectric loss tangent depending on the application. Low dielectric constant is required for demands such as high-speed propagation signal, suppression of signal transmission loss, thinning of wiring board, suppression of parasitic capacitance, etc. It is required for demands such as fine wiring patterns and built-in capacitor functions. Further, low dielectric loss tangent and high Q factor are required for demands such as suppression of signal transmission loss.

電子機器、情報通信機器等に使用される回路基板としては、セラミック基板、樹脂(有機高分子)基板が挙げられる。基板材料として樹脂を使用した場合は、セラミックと比較して、低誘電率化が図れる、回路を形成する導体の損失を小さくできるなどの特徴がある。このような回路基板用材料に使用される、あるいは期待される樹脂としては、エポキシ樹脂、フェノール樹脂、ポリイミド樹脂、不飽和ポリエステル樹脂、フッ素系樹脂、ポリフェニレンエーテル樹脂等が挙げられる。   Examples of circuit boards used in electronic devices, information communication devices, and the like include ceramic substrates and resin (organic polymer) substrates. When a resin is used as the substrate material, the dielectric constant can be reduced and the loss of a conductor forming a circuit can be reduced as compared with ceramic. Examples of resins used or expected for such circuit board materials include epoxy resins, phenol resins, polyimide resins, unsaturated polyester resins, fluororesins, polyphenylene ether resins, and the like.

エポキシ樹脂やフェノール樹脂は、回路基板用材料として一般的に使用されているものであるが、高周波帯域における低誘電正接化、低誘電率化の要求に対して充分ではなく、また樹脂の吸水率に起因する誘電特性の変動が大きい。また、ポリイミド樹脂、不飽和ポリエステル樹脂などは、低誘電正接化、低誘電率化の要求に対して期待できる材料であるが、やはり樹脂の吸水率に起因する誘電特性の変動が大きいという問題がある。フッ素系樹脂は、樹脂材料の中で低誘電正接化、低誘電率化が最も期待できる材料であるが、フッ素系樹脂自体の物性から加工性等に問題がある。   Epoxy resins and phenolic resins are commonly used as circuit board materials, but they are not sufficient for low dielectric loss tangent and low dielectric constant requirements in the high frequency band, and the water absorption rate of the resin The variation in dielectric characteristics due to the Polyimide resins, unsaturated polyester resins, and the like are materials that can be expected to meet the demands for low dielectric loss tangent and low dielectric constant, but there is also a problem that the dielectric characteristics greatly vary due to the water absorption rate of the resin. is there. A fluororesin is a material that can be most expected to have a low dielectric loss tangent and a low dielectric constant among resin materials, but has problems in workability due to the physical properties of the fluororesin itself.

このような状況下で、近年、かかる問題を解決する新しい材料としてポリフェニレンエーテル系樹脂が注目を集めるようになり、銅張り積層板への応用が試みられている(特許文献1参照)。   Under such circumstances, in recent years, polyphenylene ether resins have attracted attention as a new material for solving such problems, and application to copper-clad laminates has been attempted (see Patent Document 1).

例えば、特許文献1には、硬化性ポリフェニレンエーテル樹脂組成物及びその硬化シート又はフィルムが開示されている。この特許文献1に開示されたポリフェニレンオキサイドは、フェニレン環上の置換基が特定構造のアルケニル基又はアルキニル基のものである。   For example, Patent Document 1 discloses a curable polyphenylene ether resin composition and a cured sheet or film thereof. In the polyphenylene oxide disclosed in Patent Document 1, a substituent on the phenylene ring is an alkenyl group or alkynyl group having a specific structure.

また、特許文献2には、ポリフェニレンオキサイド樹脂系LCR多層板が開示され、特許文献3には、高誘電性ポリフェニレンオキサイド系樹脂組成物が開示されている。これら特許文献2および特許文献3に開示されたポリフェニレンオキサイドは、フェニレン環上の置換基が炭素数1〜3の炭化水素基のものである。これらのうち、ポリ(2,6−ジメチル−1,4−フェニレンエーテル)樹脂は、高周波帯域において誘電正接、比誘電率が良好で、吸水率が小さく、比較的高い耐熱性を有する樹脂であり、回路基板用材料として優れた特性を有している。   Patent Document 2 discloses a polyphenylene oxide resin-based LCR multilayer board, and Patent Document 3 discloses a high dielectric polyphenylene oxide-based resin composition. These polyphenylene oxides disclosed in Patent Document 2 and Patent Document 3 have a hydrocarbon group having 1 to 3 carbon atoms as a substituent on the phenylene ring. Among these, poly (2,6-dimethyl-1,4-phenylene ether) resin is a resin having a high dielectric loss tangent and a relative dielectric constant in a high frequency band, a small water absorption, and a relatively high heat resistance. It has excellent characteristics as a circuit board material.

さらに、特許文献4には、高周波領域で高誘電率かつ高Q値であるなど、使用目的に応じた誘電特性が得られる複合誘電体基板が開示されており、この複合誘電体基板は、誘電体セラミックス粉末とポリビニルベンジルエーテルとを所定の割合で含むものである。さらにまた、特許文献5には、ポリビニルベンジルエーテル化合物の優れた物性を損わずに、100MHzから10GHzの周波数領域において誘電率が上昇せずに、Q値が上昇する高周波誘電特性を持った組成物が開示さており、この組成物は、ポリビニルベンジルエーテル化合物と、スチレン系エラストマーとを含有する構成のポリビニルベンジルエーテル樹脂組成物である。   Further, Patent Document 4 discloses a composite dielectric substrate that can obtain a dielectric characteristic according to the purpose of use, such as a high dielectric constant and a high Q value in a high-frequency region. Body ceramic powder and polyvinyl benzyl ether in a predetermined ratio. Furthermore, Patent Document 5 discloses a composition having a high-frequency dielectric characteristic that increases the Q value without increasing the dielectric constant in the frequency range from 100 MHz to 10 GHz without impairing the excellent physical properties of the polyvinyl benzyl ether compound. This composition is a polyvinyl benzyl ether resin composition comprising a polyvinyl benzyl ether compound and a styrenic elastomer.

特公平6−78482号公報(特許請求の範囲等)Japanese Patent Publication No. 6-78482 (Claims etc.) 特公平6−82927号公報(特許請求の範囲等)Japanese Patent Publication No. 6-82927 (claims, etc.) 特公平8−11781号公報(特許請求の範囲等)Japanese Patent Publication No. 8-11781 (Claims etc.) 特開2001−181460号公報(特許請求の範囲等)JP 2001-181460 A (Claims etc.) 特開2002−128977号公報(特許請求の範囲等)JP 2002-128977 A (claims, etc.)

しかしながら、今後、情報通信に使用される電波が高周波帯域にシフトすることを考慮すれば、これまでより一層の低誘電正接化、高Q値化及び低誘電率化を図ることができる樹脂組成物が必要となる。   However, in consideration of the fact that radio waves used for information communication will shift to a high frequency band in the future, a resin composition capable of achieving further lower dielectric loss tangent, higher Q value, and lower dielectric constant. Is required.

そこで、本発明の目的は、高周波帯域における低誘電正接、高Q値及び低誘電率を有するポリフェニレンエーテル系樹脂組成物およびその製造方法を提供することにある。また、本発明の他の目的は、このポリフェニレンエーテル系樹脂組成物を使用した、電子機器、情報通信機器の高速通信化、小型軽量化、情報の大量高速処理等を実現する電子回路用基板を提供することにある。   Accordingly, an object of the present invention is to provide a polyphenylene ether resin composition having a low dielectric loss tangent, a high Q value and a low dielectric constant in a high frequency band, and a method for producing the same. Another object of the present invention is to provide an electronic circuit board that uses this polyphenylene ether-based resin composition to realize high-speed communication, downsizing and weight reduction of electronic devices and information communication devices, mass information high-speed processing, and the like. It is to provide.

本発明者らは、これまで全く検討されたことがなかったポリフェニレンエーテル系樹脂合成時に不純物として含まれる塩化物イオン量と誘電特性との関係について鋭意検討した結果、塩素イオン含有量とQ値との間に強い相間関係があることを見出し、本発明を完成するに至った。   As a result of intensive investigations on the relationship between the amount of chloride ions contained as impurities and dielectric properties during the synthesis of polyphenylene ether resins that have not been studied at all, the present inventors have determined that the chloride ion content and the Q value are The present inventors have found that there is a strong correlation between the two, and have completed the present invention.

即ち、本発明のポリフェニレンエーテル系樹脂組成物は、下記一般式(I)、

Figure 2005082793
(式中、R1およびR2は各々独立にアルキル基またはアリール基を表す)で示される繰り返し単位を有するポリフェニレンエーテル系樹脂を主成分とし、塩素イオン含有量が1500ppm以下であることを特徴とするものである。 That is, the polyphenylene ether resin composition of the present invention has the following general formula (I),
Figure 2005082793
(Wherein R 1 and R 2 each independently represents an alkyl group or an aryl group), the main component is a polyphenylene ether resin having a repeating unit, and the chloride ion content is 1500 ppm or less. To do.

また、本発明の製造方法は、前記ポリフェニレンエーテル系樹脂組成物を製造するにあたり、下記一般式(II)、

Figure 2005082793
(式中、R1およびR2は各々独立にアルキル基またはアリール基を表す)で示されるフェノール系モノマーを塩化銅溶液中にて酸素を通気しながら重合させ、下記一般式(I)、
Figure 2005082793
(式中、R1およびR2は各々独立にアルキル基またはアリール基を表す)で示される繰り返し単位を有するポリフェニレンエーテル系樹脂の粗製物を得、次いで該粗製物を塩素イオンが1500ppm以下となるまで精製することを特徴とするものである。 Further, the production method of the present invention, in producing the polyphenylene ether-based resin composition, the following general formula (II),
Figure 2005082793
(Wherein R 1 and R 2 each independently represents an alkyl group or an aryl group) are polymerized while aeration of oxygen in a copper chloride solution, and the following general formula (I),
Figure 2005082793
(In the formula, R 1 and R 2 each independently represents an alkyl group or an aryl group) A crude product of a polyphenylene ether resin having a repeating unit is obtained, and then the crude product has a chlorine ion of 1500 ppm or less. It is characterized by refine | purifying to.

さらに、本発明の電子回路用基板は、前記ポリフェニレンエーテル系樹脂組成物を主体として含むことを特徴とするものである。   Furthermore, the electronic circuit board of the present invention is characterized by containing the polyphenylene ether resin composition as a main component.

本発明によれば、高周波帯域における低誘電正接、高Q値及び低誘電率を有するポリフェニレンエーテル系樹脂組成物およびその製造方法を提供することができる。また、本発明によれば、このポリフェニレンエーテル系樹脂組成物を使用した電子回路用基板を提供することができる。この電子回路用基板は、電子機器、情報通信機器の高速通信化、小型軽量化、情報の大量高速処理等に寄与する。   According to the present invention, it is possible to provide a polyphenylene ether-based resin composition having a low dielectric loss tangent, a high Q value and a low dielectric constant in a high frequency band, and a method for producing the same. Moreover, according to this invention, the board | substrate for electronic circuits which uses this polyphenylene ether-type resin composition can be provided. This electronic circuit board contributes to high-speed communication, downsizing and weight reduction of electronic devices and information communication devices, mass information high-speed processing, and the like.

まず、本発明の組成物の主成分であるポリフェニレンエーテル系樹脂組成物について説明する。
本発明のポリフェニレンエーテル系樹脂は、下記一般式(I)で示される繰り返し単位を有する。式中、R1およびR2は各々独立にアルキル基またはアリール基を表す。本発明においては、R1がアルキル基で、かつR2がアリール基であることが、より高いQ値を得る上で好ましい。
First, the polyphenylene ether resin composition that is the main component of the composition of the present invention will be described.
The polyphenylene ether resin of the present invention has a repeating unit represented by the following general formula (I). In the formula, R 1 and R 2 each independently represents an alkyl group or an aryl group. In the present invention, it is preferable that R 1 is an alkyl group and R 2 is an aryl group in order to obtain a higher Q value.

Figure 2005082793
Figure 2005082793

アリール基として、望ましくはフェニル基が挙げられる。このアリール基は各種の置換基、例えば、メチル、エチル等の低級アルキル基、メトキシ、エトキシ等の低級アルコキシ基、ハロゲン原子などを有していてもよい。   Desirably, the aryl group includes a phenyl group. This aryl group may have various substituents, for example, a lower alkyl group such as methyl and ethyl, a lower alkoxy group such as methoxy and ethoxy, and a halogen atom.

アルキル基はCn2n+1で示され、直鎖構造であっても枝分かれ構造であってもよい。このアルキル基は各種の置換基、例えば、メトキシ、エトキシ等の低級アルコキシ基、ハロゲン原子などを有していてもよい。かかるアルキル基の炭素数nについては、n=11以上となると、樹脂材料として用いた場合の成形性が悪くなりやすいため、n=1〜10のアルキル基が好ましい。また、ポリ(2,6−ジメチル−1,4−フェニレンエーテル)よりも小さい比誘電率が得られるという観点から、n=4〜10のアルキル基がより好ましい。アルキル基としては、具体的に、メチル、エチル、n−プロピル、イソプロピル、n−ブチル、イソブチル、ペンチル、ヘキシル、ヘプチル、2−エチルヘキシル、オクチル、ノニル基が例示される。 The alkyl group is represented by C n H 2n + 1 and may be a linear structure or a branched structure. This alkyl group may have various substituents, for example, a lower alkoxy group such as methoxy and ethoxy, a halogen atom, and the like. With respect to the carbon number n of the alkyl group, when n = 11 or more, moldability when used as a resin material tends to deteriorate, and therefore an alkyl group of n = 1 to 10 is preferable. Moreover, the alkyl group of n = 4-10 is more preferable from a viewpoint that a dielectric constant smaller than poly (2, 6- dimethyl- 1, 4- phenylene ether) is obtained. Specific examples of the alkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, pentyl, hexyl, heptyl, 2-ethylhexyl, octyl and nonyl groups.

本発明の組成物は、ポリフェニレンエーテル系樹脂に対応するモノマーである下記一般式(II)、

Figure 2005082793
(式中、R1およびR2は各々独立にアルキル基またはアリール基を表す)で示されるフェノール系モノマーを合成し、そのモノマーを重合させることにより得られる。モノマー及びポリマーの合成については、種々の方法を採ることができるが、本発明においては最終生成物に含まれる塩素イオン含有量が1500ppm以下、好ましくは1000ppm以下、より好ましくは700ppm以下となることが重要である。塩素イオン含有量が1000ppm以下のときに、例えば、R1とR2がともにCH3基の場合、Q値が500以上の高い値となる。また、R1がC25でR2がC65の場合には、塩素イオン含有量が1500ppm以下のときにQ値が500以上となる。そのため、本発明の製造方法では、上記一般式(II)で示されるフェノールモノマーの重合反応終了後、塩素イオン含有量が1500ppm以下、好ましくは1000ppm以下、より好ましくは700ppm以下となるまで精製することが必要である。 The composition of the present invention has the following general formula (II), which is a monomer corresponding to a polyphenylene ether resin.
Figure 2005082793
(Wherein, R 1 and R 2 each independently represents an alkyl group or an aryl group) are synthesized, and the monomer is polymerized. Various methods can be employed for the synthesis of the monomer and polymer. In the present invention, the chlorine ion content in the final product may be 1500 ppm or less, preferably 1000 ppm or less, more preferably 700 ppm or less. is important. When the chloride ion content is 1000 ppm or less, for example, when both R 1 and R 2 are CH 3 groups, the Q value becomes a high value of 500 or more. When R 1 is C 2 H 5 and R 2 is C 6 H 5 , the Q value is 500 or more when the chlorine ion content is 1500 ppm or less. Therefore, in the production method of the present invention, after completion of the polymerization reaction of the phenol monomer represented by the general formula (II), purification is performed until the chlorine ion content is 1500 ppm or less, preferably 1000 ppm or less, more preferably 700 ppm or less. is required.

本発明に係るポリフェニレンエーテル系樹脂の分子量は、限定されるものではないが、例えば、重量平均分子量(Mw)1.0×104〜1.0×105程度であり、数平均分子量(Mn)5.0×103〜3.0×104程度であり、分子量分布(Mw/Mn)2〜6程度である。 Although the molecular weight of the polyphenylene ether resin according to the present invention is not limited, for example, the weight average molecular weight (Mw) is about 1.0 × 10 4 to 1.0 × 10 5 , and the number average molecular weight (Mn ) About 5.0 × 10 3 to 3.0 × 10 4 and a molecular weight distribution (Mw / Mn) of about 2-6.

本発明のポリフェニレンエーテル系樹脂組成物の1種又は2種以上をそのまま電子回路用基板材料として用いることもできるが、スチレン系エストラマーおよび/又は難燃剤を配合してもよい。スチレン系エストラマーの配合により、得られる基板に可撓性が付与され、金属箔付き樹脂基板を得る際の金属箔との密着強度が向上し、また作業性も向上する。また、難燃剤の配合により、用途に応じた難燃性の要求が満たされる。   One or more of the polyphenylene ether resin compositions of the present invention can be used as they are as a substrate material for electronic circuits, but a styrene elastomer and / or a flame retardant may be blended. By blending the styrene elastomer, flexibility is imparted to the obtained substrate, adhesion strength with the metal foil in obtaining a resin substrate with metal foil is improved, and workability is also improved. Moreover, the flame-retardant request | requirement according to a use is satisfy | filled by the mixing | blending of a flame retardant.

スチレン系エストラマーはポリフェニレンエーテル系樹脂と相溶性が高く、低誘電率及び低誘電正接のエストラマーとして選択されたものである。スチレン系エストラマーはスチレン−ポリオレフィン系共重合体であり、スチレン比が質量比で50%以上、さらに好ましくは50〜80%のものである。スチレン比が50%より小さいと、ポリフェニレンエーテル系樹脂との相溶性が低下する傾向にある。一方、スチレン比が80%よりも大きくなると、得られる基板の可撓性が低下する傾向にある。ポリオレフィン相としては、ポリ(ポリエチレン−プロピレン)、ポリエチレン−ポリブチレンランダムコポリマー、ポリブタジエン、ポリイソプレンなどが挙げられる。スチレン系エストラマーの配合量は、ポリフェニレンエーテル系樹脂:スチレン系エストラマーの配合量比で表して、95:5〜75:25程度が好ましい。この程度の配合量で、スチレン系エストラマーの配合効果が得られる。スチレン系エストラマーは、1種又は2種以上を用いることができる。   Styrenic elastomers are highly compatible with polyphenylene ether resins and have been selected as low dielectric constant and low dielectric loss tangent elastomers. The styrene elastomer is a styrene-polyolefin copolymer and has a styrene ratio of 50% or more, more preferably 50 to 80% by mass ratio. When the styrene ratio is less than 50%, the compatibility with the polyphenylene ether resin tends to be lowered. On the other hand, when the styrene ratio is larger than 80%, the flexibility of the obtained substrate tends to be lowered. Examples of the polyolefin phase include poly (polyethylene-propylene), polyethylene-polybutylene random copolymer, polybutadiene, and polyisoprene. The blending amount of the styrene-based elastomer is preferably about 95: 5 to 75:25, expressed as a blending ratio of polyphenylene ether resin: styrene-based elastomer. With such a blending amount, the blending effect of the styrenic elastomer can be obtained. One or more styrenic elastomers can be used.

難燃剤は難燃性が要求される場合、必要に応じて配合する。難燃剤としては、塩素系難燃剤、臭素系難燃剤、リン系難燃剤、窒素系難燃剤、金属塩系難燃剤、シリコーン系難燃剤などが挙げられる。難燃剤の配合量は、ポリフェニレンエーテル系樹脂:難燃剤の配合重量比で表して、95:5〜70:30程度が好ましい。この程度の配合量で、難燃効果が得られる。難燃剤は、1種又は2種以上を用いることができる。   The flame retardant is blended as necessary when flame retardancy is required. Examples of the flame retardant include a chlorine flame retardant, a bromine flame retardant, a phosphorus flame retardant, a nitrogen flame retardant, a metal salt flame retardant, and a silicone flame retardant. The blending amount of the flame retardant is preferably about 95: 5 to 70:30, expressed as a blending weight ratio of polyphenylene ether resin: flame retardant. With such a blending amount, a flame retardant effect is obtained. 1 type (s) or 2 or more types can be used for a flame retardant.

本発明のポリフェニレンエーテル系樹脂組成物にスチレン系エストラマー及び/又は難燃剤を加える場合、これらを混練するとよい。混練は、混練機、ニーダ、ボールミル、攪拌機、ロール等の公知の手段を用いて行なうとよい。また、本発明のポリフェニレンエーテル系樹脂組成物は、溶剤中において、ポリフェニレンエーテル系樹脂にスチレン系エストラマー及び/又は難燃剤を混合して、乾燥して作製してもよい。この際に使用する溶剤としては、トルエン、キシレン等の芳香族系揮発性溶剤が好ましい。また、本発明の目的を損なわない範囲で、その他の添加剤を添加してもよい。   When adding a styrene-type elastomer and / or a flame retardant to the polyphenylene ether-type resin composition of this invention, it is good to knead | mix these. The kneading may be performed using a known means such as a kneader, a kneader, a ball mill, a stirrer, or a roll. The polyphenylene ether resin composition of the present invention may be prepared by mixing a polyphenylene ether resin with a styrene elastomer and / or a flame retardant in a solvent and drying. As the solvent used at this time, aromatic volatile solvents such as toluene and xylene are preferable. Moreover, you may add another additive in the range which does not impair the objective of this invention.

次に、本発明の種々の形態を取りうる電子回路用基板について説明する。
本発明のポリフェニレンエーテル系樹脂組成物をそのままで、又はこの樹脂組成物にスチレン系エストラマーおよび/又は難燃剤を配合した組成物で、樹脂基板を作製することができる。以下、これら組成物を、ポリフェニレンエーテル系樹脂材料と総称する。
Next, an electronic circuit board that can take various forms of the present invention will be described.
A resin substrate can be produced with the polyphenylene ether resin composition of the present invention as it is or with a composition obtained by blending this resin composition with a styrene elastomer and / or a flame retardant. Hereinafter, these compositions are collectively referred to as polyphenylene ether resin materials.

電子回路用樹脂基板には種々の形態がある。前記ポリフェニレンエーテル系樹脂材料を加熱加圧プレス成形することにより、樹脂基板が得られる。前記ポリフェニレンエーテル系樹脂材料を溶剤に溶解した溶液を、ガラスクロス等のクロス基材に塗工し、乾燥することにより、基材塗工物が得られ、また前記溶液を銅箔等の金属箔上に塗工し、乾燥することにより、金属箔塗工物が得られる。さらに、前記基材塗工物、銅箔等の金属箔、及び前記金属箔塗工物を適宜組合わせて重ね合わせ、これらを加熱加圧成形することにより、基板が得られる。これらの基板においては、その組み合わせにより銅箔等の金属箔を両面又は片面に有するものや、金属箔を有しないものとすることができ、さらには多層化が可能である。具体的には、基材塗工物の2枚以上を重ねた状態で加熱加圧成形して得られる基板、基材塗工物の1枚を、あるいは基材塗工物の2枚以上を重ねた状態で、金属箔間に挟んで加熱加圧成形して得られる両面金属貼り基板、金属箔塗工物の2枚以上を両外側面が金属箔となるように重ねた状態で加熱加圧成形して得られる両面金属貼り基板等が挙げられる。さらには、基材塗工物、ポリフェニレンエーテル系樹脂材料を加熱加圧プレス成形することにより得られる樹脂基板、基材塗工物の2枚以上を重ねた状態で加熱加圧成形して得られる基板、又は両面金属貼り基板の片面又は両面に、金属箔塗工物を金属箔が外側面となるように重ねた状態で加熱加圧成形して得られる多層基板等が挙げられる。   There are various forms of resin substrates for electronic circuits. A resin substrate can be obtained by press-molding the polyphenylene ether resin material under heat and pressure. A solution obtained by dissolving the polyphenylene ether-based resin material in a solvent is applied to a cloth substrate such as a glass cloth, and dried to obtain a substrate coated product. The solution is also applied to a metal foil such as a copper foil. A metal foil coated product can be obtained by coating and drying. Further, the substrate coated product, the metal foil such as a copper foil, and the metal foil coated product are appropriately combined and superposed, and these are heated and pressed to obtain a substrate. These substrates can have a metal foil such as a copper foil on both sides or one side, or no metal foil depending on the combination, and can be multi-layered. Specifically, a substrate obtained by heat and pressure molding in a state in which two or more of the substrate coated products are stacked, one of the substrate coated products, or two or more of the substrate coated products Two or more double-sided metal-clad substrates and metal foil coated products obtained by hot-press molding sandwiched between metal foils in a stacked state are heated in a state where both outer side surfaces are metal foils. Examples thereof include a double-sided metal-clad substrate obtained by pressure forming. Furthermore, it is obtained by heat and pressure molding in a state where two or more of the base material coated product, the resin substrate obtained by heat and pressure press molding of the polyphenylene ether resin material, and the base material coated material are stacked. Examples thereof include a multilayer substrate obtained by heating and press-molding a metal foil coated product on one side or both sides of a substrate or a double-sided metal-bonded substrate so that the metal foil becomes an outer surface.

基材塗工物を作製する場合には、まず前記ポリフェニレンエーテル系樹脂材料及び適切な溶剤を用いて、ポリフェニレンエーテル系樹脂の含有量が質量百分率で20〜60%の塗工用溶液を調製する。溶液調製時に使用する溶剤としては、トルエン、キシレン等の芳香族系揮発性溶剤が好ましい。前記樹脂材料と溶剤を混合攪拌機で混合し、必要に応じて加温、脱気等を行ない、塗工用溶液を作製する。   When preparing a substrate coated product, first, using the polyphenylene ether resin material and an appropriate solvent, a coating solution having a polyphenylene ether resin content of 20 to 60% by mass is prepared. . As the solvent used in preparing the solution, aromatic volatile solvents such as toluene and xylene are preferable. The resin material and the solvent are mixed with a mixing stirrer, and heated, degassed, etc. as necessary to prepare a coating solution.

このようにして得られた塗工用溶液を、ガラスクロス等のクロス基材に塗工する。クロス基材としてはガラスクロスを使用することが好ましい。ガラスクロスは一般的に市販されているもの(例えば旭シュエーベル製のもの)が使用できるが、所望の電気的特性を得るために必要に応じてEガラスクロス、Dガラスクロス等を使い分けることができる。また、クロス基材への塗工性や接着強度向上等の目的に応じて、クロス基材のカップリング処理等を行っても良い。塗工方法としては、公知の縦型塗工機で所定の厚みに塗工する方法、公知のドクターブレード法によりクロス基材に塗工する方法等、公知のいずれの方法であってもよい。このような方法で塗工したものを、100〜140℃で、0.5〜5時間乾燥し、基材塗工物を得る。   The coating solution thus obtained is applied to a cloth substrate such as a glass cloth. A glass cloth is preferably used as the cloth substrate. Although commercially available glass cloths (for example, those manufactured by Asahi Sebel) can be used, E glass cloths, D glass cloths, etc. can be properly used as necessary to obtain desired electrical characteristics. . Moreover, according to the objectives, such as the applicability | paintability to a cross base material and adhesive strength improvement, you may perform the coupling process of a cross base material, etc. The coating method may be any known method such as a method of coating to a predetermined thickness using a known vertical coating machine, or a method of coating a cloth substrate by a known doctor blade method. What was coated by such a method is dried at 100-140 degreeC for 0.5 to 5 hours, and a base-material coated material is obtained.

この基材塗工物を使用して、例えば銅貼り基板を作製する場合には、所定の厚みになるように、1枚の基材塗工物の両面又は片面に、又は複数枚の基材塗工物を重ね合わせたその両面又は片面に、又は予め複数枚の基材塗工物が加熱加圧成形された積層体の両面又は片面に、銅箔等の金属箔を重ねて配置し加熱加圧成形し一体化する。成形方法は熱プレス等の公知の方法にて行えばよい。成形条件としては、温度150〜250℃、圧力9.8×105〜4.9×106Pa、プレス時間0.5〜5時間程度が好ましい。このとき金属箔としては一般的には銅箔が使用されるが、他に金箔、銀箔、アルミ箔等から選択することができる。また、ピール強度を充分に得たい場合は電解箔を使用し、高周波特性を重視したい場合は表面凹凸による表皮効果の少ない圧延箔を使用するとよい。金属箔厚みについては、基板の用途や要求特性などに応じて8〜80μmのものを使用する。 For example, when a copper-clad substrate is prepared using this base material coated product, a single base material coated surface or both surfaces or a plurality of base materials so as to have a predetermined thickness. Heating by placing metal foil such as copper foil on both sides or one side of the layered coating, or on both sides or one side of a laminate on which a plurality of substrate coatings have been pre-heated and pressed. Compressed and integrated. The forming method may be performed by a known method such as hot pressing. As molding conditions, a temperature of 150 to 250 ° C., a pressure of 9.8 × 10 5 to 4.9 × 10 6 Pa, and a press time of about 0.5 to 5 hours are preferable. At this time, a copper foil is generally used as the metal foil, but can be selected from a gold foil, a silver foil, an aluminum foil, and the like. Further, when it is desired to obtain sufficient peel strength, an electrolytic foil is used, and when high frequency characteristics are important, a rolled foil having a small skin effect due to surface irregularities is preferably used. About metal foil thickness, a thing of 8-80 micrometers is used according to the use of a board | substrate, a required characteristic, etc.

また、上述のような銅箔等の金属箔上に前記の塗工用溶液をドクターブレード法等により塗工、乾燥することにより、金属箔塗工物が得られる。この金属箔塗工物から基板を作製することができる。   Moreover, a metal foil coated product can be obtained by coating and drying the above coating solution on a metal foil such as the above copper foil by a doctor blade method or the like. A substrate can be produced from this coated metal foil.

さらに、本発明のポリフェニレンエーテル系樹脂材料を用いて、プレス成形樹脂基板を作製することができる。前記樹脂材料の固体粉末を金型にて温度150〜250℃、圧力9.8×105〜4.9×106Pa、プレス時間0.5〜5時間の成形条件でプレス成形し、基板を得る。基板厚みとしては、0.5〜5mmであることが好ましいが、所望の厚みに応じて適宜選択する。 Furthermore, a press-molded resin substrate can be produced using the polyphenylene ether resin material of the present invention. A solid powder of the resin material is press-molded in a mold at a temperature of 150 to 250 ° C., a pressure of 9.8 × 10 5 to 4.9 × 10 6 Pa, a press time of 0.5 to 5 hours, and a substrate Get. The substrate thickness is preferably 0.5 to 5 mm, but is appropriately selected according to the desired thickness.

このようにして作製した、基材塗工物、金属箔塗工物、基板、金属箔などを適宜組み合わせて成形を行い、多層基板を作製することができる。成形条件としては、温度150〜250℃、圧力9.8×105〜4.9×106Pa、プレス時間0.5〜5時間が好ましい。 A multilayer substrate can be produced by forming the substrate coated product, the metal foil coated product, the substrate, the metal foil, and the like thus produced, in an appropriate combination. As molding conditions, a temperature of 150 to 250 ° C., a pressure of 9.8 × 10 5 to 4.9 × 10 6 Pa, and a pressing time of 0.5 to 5 hours are preferable.

以下、実施例により本発明を更に具体的に説明するが、本発明はこれらのみに限定されるものではない。   EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples, but the present invention is not limited to these examples.

実施例1及び実施例2:ポリ(2−エチル−6−フェニル−1,4−フェニレンエーテル)の合成
ポリ(2−エチル−6−フェニル−1,4−フェニレンエーテル)を次の化学反応式に示すルートにて、以下の1)〜6)の工程を経て合成した。
Example 1 and Example 2: Synthesis of poly (2-ethyl-6-phenyl-1,4-phenylene ether) Poly (2-ethyl-6-phenyl-1,4-phenylene ether) was synthesized by the following chemical reaction formula. Was synthesized through the following steps 1) to 6).

Figure 2005082793
Figure 2005082793

1)2−フェニルアニソール(2)の合成
炭酸カリウム(126g,912mmol)のN,N−ジメチルホルムアミド(100ml)懸濁液に、窒素雰囲気下、2−フェニルフェノール(1)(50.2g,295mmol)のN,N−ジメチルホルムアミド(50ml)溶液を加えて、60℃で1時間撹拌した後、室温まで冷却した。これにヨードメタン(34.5ml,554mmol)を滴下して室温で撹拌した。TLC分析(薄層クロマトグラフィー)により反応の完結を確認した後、セライトろ過により塩を取り除いた。ろ液にヘキサン(200ml)と水(200ml)を加えて分液操作を行い、有機層と水層とを得た。水層を酢酸エチルで抽出し、酢酸エチル層を先に得られた有機層とあわせて飽和食塩水で洗浄後、無水硫酸ナトリウムで乾燥した。有機液を濃縮後、シリカゲルカラムクロマトグラフィー(ヘキサン/酢酸エチル=10/1)で精製し、2−フェニルアニソール(2)(48.5g,89%)を得た。
1) Synthesis of 2-phenylanisole (2) To a suspension of potassium carbonate (126 g, 912 mmol) in N, N-dimethylformamide (100 ml) under a nitrogen atmosphere, 2-phenylphenol (1) (50.2 g, 295 mmol). ) In N, N-dimethylformamide (50 ml) was added, and the mixture was stirred at 60 ° C. for 1 hour, and then cooled to room temperature. To this, iodomethane (34.5 ml, 554 mmol) was added dropwise and stirred at room temperature. After confirming the completion of the reaction by TLC analysis (thin layer chromatography), the salt was removed by Celite filtration. Hexane (200 ml) and water (200 ml) were added to the filtrate to carry out a liquid separation operation to obtain an organic layer and an aqueous layer. The aqueous layer was extracted with ethyl acetate, and the ethyl acetate layer was combined with the previously obtained organic layer, washed with saturated brine, and dried over anhydrous sodium sulfate. The organic liquid was concentrated and purified by silica gel column chromatography (hexane / ethyl acetate = 10/1) to obtain 2-phenylanisole (2) (48.5 g, 89%).

2)2−メトキシ−3−フェニルベンズアルデヒド(3)の合成
窒素雰囲気下、2−フェニルアニソール(2)(20.0g,109mmol)のN,N,N’,N’−テトラメチルエチレンジアミン(24.6ml,163mmol)溶液に1.59M n−ブチルリチウムヘキサン溶液(102ml,163mmol)を滴下して、50℃で4時間撹拌した。反応溶液をドライアイス−アセトン浴で−78℃に冷却して、N,N−ジメチルホルムアミド(12.6ml,163mmol)を滴下した後、ドライアイス−アセトン浴を外して室温まで徐々に昇温した。TLC分析により反応の完結を確認した後、0℃で3M塩酸を滴下し、反応を停止した(pH7)。酢酸エチルで抽出した有機層を飽和食塩水で洗浄後、無水硫酸ナトリウムで乾燥した。抽出液を濃縮後、シリカゲルカラムクロマトグラフィー(ヘキサン/酢酸エチル=10/1)で精製し、2−メトキシ−3−フェニルベンズアルデヒド(3)(16.9g,73%)を得た。
2) Synthesis of 2-methoxy-3-phenylbenzaldehyde (3) Under a nitrogen atmosphere, 2-phenylanisole (2) (20.0 g, 109 mmol) of N, N, N ′, N′-tetramethylethylenediamine (24. To the solution (6 ml, 163 mmol), a 1.59 M n-butyllithium hexane solution (102 ml, 163 mmol) was added dropwise and stirred at 50 ° C. for 4 hours. The reaction solution was cooled to −78 ° C. in a dry ice-acetone bath, N, N-dimethylformamide (12.6 ml, 163 mmol) was added dropwise, the dry ice-acetone bath was removed, and the temperature was gradually raised to room temperature. . After confirming the completion of the reaction by TLC analysis, 3M hydrochloric acid was added dropwise at 0 ° C. to stop the reaction (pH 7). The organic layer extracted with ethyl acetate was washed with saturated brine and dried over anhydrous sodium sulfate. The extract was concentrated and purified by silica gel column chromatography (hexane / ethyl acetate = 10/1) to give 2-methoxy-3-phenylbenzaldehyde (3) (16.9 g, 73%).

3)2−フェニル−6−ビニルアニソール(4)の合成
ヨードメタンとトリフェニルホスフィンから合成したホスホニウム塩(42.3g,105mmol)のテトラヒドロフランTHF(250ml)懸濁液にカリウム−t−ブトキシド(18.3g,163mmol)を加え、窒素雰囲気下、室温で30分間撹拌した後、2−メトキシ−3−フェニルベンズアルデヒド(3)(16.9g,79.7mmol)のTHF(10ml)溶液を滴下して、室温でさらに撹拌した。TLC分析により反応の完結を確認した後、ヘキサン(200ml)を加えて、生じた沈殿をセライトろ過で取り除いた。ろ液を濃縮後、シリカゲルカラムクロマトグラフィー(ヘキサン/酢酸エチル=50/1)で精製し、2−フェニル−6−ビニルアニソール(4)(11.8g,70%)を得た。
3) Synthesis of 2-phenyl-6-vinylanisole (4) To a suspension of phosphonium salt (42.3 g, 105 mmol) synthesized from iodomethane and triphenylphosphine in tetrahydrofuran THF (250 ml), potassium tert-butoxide (18. 3 g, 163 mmol) was added, and the mixture was stirred at room temperature for 30 minutes under a nitrogen atmosphere. Then, a solution of 2-methoxy-3-phenylbenzaldehyde (3) (16.9 g, 79.7 mmol) in THF (10 ml) was added dropwise, Further stirring at room temperature. After confirming the completion of the reaction by TLC analysis, hexane (200 ml) was added, and the resulting precipitate was removed by celite filtration. The filtrate was concentrated and purified by silica gel column chromatography (hexane / ethyl acetate = 50/1) to obtain 2-phenyl-6-vinylanisole (4) (11.8 g, 70%).

2−フェニル−6−ビニルアニソール(4)のNMRデータ;
1H−NMR(CDCl3);δ=3.38(3H,s),5.34(1H,d,J=11.1Hz),5.80(1H,d,J=17.8Hz),7.01−7.62(9H,m)
NMR data of 2-phenyl-6-vinylanisole (4);
1 H-NMR (CDCl 3 ); δ = 3.38 (3H, s), 5.34 (1H, d, J = 11.1 Hz), 5.80 (1H, d, J = 17.8 Hz), 7.01-7.62 (9H, m)

4)2−エチル−6−フェニルアニソール(5)の合成
触媒として5%Pt/C(520mg,0.0573mmol)と2−フェニル−6−ビニルアニソール(4)(6.02g,28.6mmol)のエタノール(30ml)懸濁液を、1atmの水素下、70℃で撹拌した。TLC分析により反応の完結を確認した後、窒素置換を行い、ろ過により触媒を取り除いた。ろ液を濃縮後、シリカゲルカラムクロマトグラフィー(ヘキサン/酢酸エチル=100/1)で精製し、2−エチル−6−フェニルアニソール(5)(5.87g,97%)を得た。
4) Synthesis of 2-ethyl-6-phenylanisole (5) 5% Pt / C (520 mg, 0.0573 mmol) and 2-phenyl-6-vinylanisole (4) (6.02 g, 28.6 mmol) as a catalyst Of ethanol (30 ml) was stirred at 70 ° C. under 1 atm of hydrogen. After confirming the completion of the reaction by TLC analysis, nitrogen substitution was performed, and the catalyst was removed by filtration. The filtrate was concentrated and purified by silica gel column chromatography (hexane / ethyl acetate = 100/1) to obtain 2-ethyl-6-phenylanisole (5) (5.87 g, 97%).

2−エチル−6−フェニルアニソール(5)のNMRデータ:
1H−NMR(CDCl3);δ=1.28(3H,t,J=7.5Hz),2.74(2H,q,J=7.5Hz),3.35(3H,s),7.06−7.23(2H,m),7.29−7.47(3H,m),7.53−7.63(2H,m)
NMR data for 2-ethyl-6-phenylanisole (5):
1 H-NMR (CDCl 3 ); δ = 1.28 (3H, t, J = 7.5 Hz), 2.74 (2H, q, J = 7.5 Hz), 3.35 (3H, s), 7.06-7.23 (2H, m), 7.29-7.47 (3H, m), 7.53-7.63 (2H, m)

5)2−エチル−6−フェニルフェノール(6)の合成
窒素雰囲気下、2−エチル−6−フェニルアニソール(5)(5.32g,25.1mmol)の塩化メチレン(15ml)溶液に、2M三臭化ホウ素の塩化メチレン溶液(10ml)を−78℃で滴下した。TLC分析により反応の完結を確認した後、反応溶液を0℃の水(100ml)に注いで反応を停止した。ジエチルエーテルで抽出し、飽和食塩水で洗浄後、無水硫酸マグネシウムで乾燥した。抽出液を濃縮後、シリカゲルカラムクロマトグラフィー(ヘキサン/酢酸エチル=30/1)で精製し、2−エチル−6−フェニルフェノール(6)(4.38g,88%)を得た。
5) Synthesis of 2-ethyl-6-phenylphenol (6) To a solution of 2-ethyl-6-phenylanisole (5) (5.32 g, 25.1 mmol) in methylene chloride (15 ml) under a nitrogen atmosphere, 2M A solution of boron bromide in methylene chloride (10 ml) was added dropwise at -78 ° C. After confirming the completion of the reaction by TLC analysis, the reaction solution was poured into water (100 ml) at 0 ° C. to stop the reaction. The mixture was extracted with diethyl ether, washed with saturated brine, and dried over anhydrous magnesium sulfate. The extract was concentrated and purified by silica gel column chromatography (hexane / ethyl acetate = 30/1) to give 2-ethyl-6-phenylphenol (6) (4.38 g, 88%).

2−エチル−6−フェニルフェノール(6)のNMRデーク:1H−NMR(CDCl3);δ=1.27(3H,t,J=7.6Hz),2.71(2H,q,J=7.6Hz),5.25(1H,s),6.93(1H,t,J=7.5Hz),7.03−7.21(2H,m),7.33−7.56(5H,m) NMR data of 2-ethyl-6-phenylphenol (6): 1 H-NMR (CDCl 3 ); δ = 1.27 (3H, t, J = 7.6 Hz), 2.71 (2H, q, J = 7.6 Hz), 5.25 (1 H, s), 6.93 (1 H, t, J = 7.5 Hz), 7.03-7.21 (2 H, m), 7.33-7.56. (5H, m)

6)2−エチル−6−フェニルフェノール(6)の重合
塩化銅(45.0mg,0.454mmol)のニトロベンゼン(6ml)とピリジン(1.90ml,45.4mmol)の混合溶液に酸素を通気した。5分後に、2−エチル−6−フェニルフェノール(6)(300mg,1.51mmol)のニトロベンゼン(4ml)溶液を5分間かけて滴下し、さらに通気を続けた。3時間後に酸素の通気を止め、メタノール(5ml)を注いで反応を停止した。反応溶液を1M塩酸−メタノール溶液(150ml)に注いで、30分間撹拌し、吸引ろ過により粗製物を得た。この粗製物を真空ポンプで減圧乾燥後、クロロホルム(3ml)に溶解し、溶解液を1M塩酸−メタノール溶液(150ml)に滴下して再沈殿操作を行った。得られた沈澱物のろ過、洗浄、乾燥を行い、ポリ(2−エチル−6−フェニル−1,4−フェニレンエーテル)(103mg,35%)を得た。(2−エチル−6−フェニル−1,4−フェニレンエーテル)のゲル浸透クロマトグラフィー(GPC)によるMwは8.8×104、Mnは2.3×104であった。なお、沈澱物の洗浄の程度に応じて、最終ポリマーに含まれる塩素イオン含有量が300ppm(実施例1)と1500ppm(実施例2)との、2種の組成物を得た。
6) Polymerization of 2-ethyl-6-phenylphenol (6) Oxygen was bubbled through a mixed solution of copper chloride (45.0 mg, 0.454 mmol) in nitrobenzene (6 ml) and pyridine (1.90 ml, 45.4 mmol). . After 5 minutes, a solution of 2-ethyl-6-phenylphenol (6) (300 mg, 1.51 mmol) in nitrobenzene (4 ml) was added dropwise over 5 minutes, and aeration was continued. After 3 hours, the aeration of oxygen was stopped, and methanol (5 ml) was poured to stop the reaction. The reaction solution was poured into a 1M hydrochloric acid-methanol solution (150 ml), stirred for 30 minutes, and a crude product was obtained by suction filtration. This crude product was dried under reduced pressure with a vacuum pump, dissolved in chloroform (3 ml), and the solution was added dropwise to 1M hydrochloric acid-methanol solution (150 ml) for reprecipitation. The resulting precipitate was filtered, washed and dried to obtain poly (2-ethyl-6-phenyl-1,4-phenylene ether) (103 mg, 35%). Mw by gel permeation chromatography (GPC) of (2-ethyl-6-phenyl-1,4-phenylene ether) was 8.8 × 10 4 and Mn was 2.3 × 10 4 . In addition, according to the grade of washing | cleaning of a deposit, two types of compositions with the chloride ion content contained in a final polymer 300 ppm (Example 1) and 1500 ppm (Example 2) were obtained.

7)基板の作製
得られた2種のポリ(2−エチル−6−フェニル−1,4−フェニレンエーテル)樹脂組成物の所定量を40mm×25mmの金型に詰め、成形温度190℃、成形圧力2.9×106Pa、プレス時間1時間の成形条件で加熱加圧プレス成形を行い、厚み約1mmの基板を作製した。得られた基板から、40mm長、1mm幅、1mm厚のスティックを切り出し、空洞共振器摂動法にて5GHzにおける比誘電率ε及びQ値(=1/tanδ)を求めた。
7) Fabrication of substrate A predetermined amount of the obtained two kinds of poly (2-ethyl-6-phenyl-1,4-phenylene ether) resin compositions was packed in a 40 mm × 25 mm mold, and the molding temperature was 190 ° C. Heat press-molding was performed under molding conditions of a pressure of 2.9 × 10 6 Pa and a press time of 1 hour to produce a substrate having a thickness of about 1 mm. A stick having a length of 40 mm, a width of 1 mm, and a thickness of 1 mm was cut out from the obtained substrate, and a relative dielectric constant ε and a Q value (= 1 / tan δ) at 5 GHz were obtained by a cavity resonator perturbation method.

実施例3〜5及び比較例1、2:ポリ(2,6−ジメチル−1,4−フェニレンエーテル)の合成
実施例1の2−フェニルフェノール(1)の代わりに2−メチルフェノールを出発物質として使用し、さらに実施例1の(2)において、N,N−ジメチルホルムアミドの代わりにヨードメタンを作用させ、2,6−ジメチルアニソールを得た。以後、実施例1の(5)、(6)のプロセスに従い、2,6−ジメチルフェノールを得て、これを重合させて各種ポリ(2,6−ジメチル−1,4−フェニレンエーテル)を得た。得られたポリマーのGPCによるMwおよびMnは下記の表1に示す通りである。なお、沈澱物の洗浄の程度に応じて、最終ポリマーに含まれる塩素イオン含有量が0ppm(実施例3)、700ppm(実施例4)、1500ppm(実施例5)、1600ppm(比較例1)及び2700ppm(比較例2)の各組成物を得た。
Examples 3 to 5 and Comparative Examples 1 and 2: Synthesis of poly (2,6-dimethyl-1,4-phenylene ether) 2-methylphenol instead of 2-phenylphenol (1) in Example 1 as a starting material Then, in Example 1 (2), iodomethane was allowed to act instead of N, N-dimethylformamide to obtain 2,6-dimethylanisole. Thereafter, 2,6-dimethylphenol was obtained according to the processes of (5) and (6) of Example 1, and this was polymerized to obtain various poly (2,6-dimethyl-1,4-phenylene ether). It was. Mw and Mn by GPC of the obtained polymer are as shown in Table 1 below. Depending on the degree of washing of the precipitate, the chloride ion content contained in the final polymer is 0 ppm (Example 3), 700 ppm (Example 4), 1500 ppm (Example 5), 1600 ppm (Comparative Example 1) and Each composition of 2700 ppm (Comparative Example 2) was obtained.

得られた5種類のポリ(2,6−ジメチル−1,4−フェニレンエーテル)樹脂組成物の所定量を40mm×25mmの金型に詰め、成形温度250℃、成形圧力2.9×106Pa、プレス時間1.5時間の成形条件で加熱加圧プレス成形を行い、厚み約1mmの基板を作製した。得られた基板から、40mm長、1mm幅、1mm厚のスティックを切り出し、空洞共振器摂動法にて5GHzにおける比誘電率ε及びQ値(=1/tanδ)を求めた。 Predetermined amounts of the five types of poly (2,6-dimethyl-1,4-phenylene ether) resin compositions obtained were packed in a 40 mm × 25 mm mold, a molding temperature of 250 ° C., a molding pressure of 2.9 × 10 6. Heat and pressure press molding was performed under molding conditions of Pa and a press time of 1.5 hours to produce a substrate having a thickness of about 1 mm. A stick having a length of 40 mm, a width of 1 mm, and a thickness of 1 mm was cut out from the obtained substrate, and a relative dielectric constant ε and a Q value (= 1 / tan δ) at 5 GHz were obtained by a cavity resonator perturbation method.

実施例1〜5及び比較例1、2のポリフェニレンエーテル樹脂組成物についての評価結果を下記の表1に示す。   The evaluation results for the polyphenylene ether resin compositions of Examples 1 to 5 and Comparative Examples 1 and 2 are shown in Table 1 below.

Figure 2005082793
Figure 2005082793

表1より、ポリフェニレンエーテル系樹脂組成物では、それらのQ値は、塩素イオン含有量が少なくなる程高くなることが明らかとなった。また、ポリフェニレン環の2,6位の一方にアリール基が導入され、他方がアルキル基とされたポリフェニレンエーテル系樹脂組成物は双方ともアルキル基のものに比べ、相対的にQ値が高くなることも明らかとなった。この結果をグラフに表すと図1のようになり、塩素イオン含有量とQ値との間に明らかな相関関係が存在することがわかる。   From Table 1, it was clarified that in the polyphenylene ether-based resin composition, the Q value increases as the chlorine ion content decreases. In addition, the polyphenylene ether-based resin composition in which an aryl group is introduced at one of the 2,6-positions of the polyphenylene ring and the other is an alkyl group has a relatively higher Q value than both of the alkyl groups. It became clear. This result is shown in a graph as shown in FIG. 1, and it can be seen that there is a clear correlation between the chlorine ion content and the Q value.

塩素イオン含有量とQ値との関係を示すグラフである。It is a graph which shows the relationship between chloride ion content and Q value.

Claims (17)

下記一般式(I)、
Figure 2005082793
(式中、R1およびR2は各々独立にアルキル基またはアリール基を表す)で示される繰り返し単位を有するポリフェニレンエーテル系樹脂を主成分とし、塩素イオン含有量が1500ppm以下であることを特徴とするポリフェニレンエーテル系樹脂組成物。
The following general formula (I),
Figure 2005082793
(Wherein R 1 and R 2 each independently represents an alkyl group or an aryl group), the main component is a polyphenylene ether resin having a repeating unit, and the chloride ion content is 1500 ppm or less. A polyphenylene ether resin composition.
前記一般式(I)において、R1は炭素原子数1〜10のアルキル基で、かつR2はアリール基を表す請求項1に記載のポリフェニレンエーテル系樹脂組成物。 2. The polyphenylene ether-based resin composition according to claim 1, wherein, in the general formula (I), R 1 is an alkyl group having 1 to 10 carbon atoms, and R 2 represents an aryl group. 前記一般式(I)において、R1は炭素原子数4〜10のアルキル基で、かつR2はアリール基を表す請求項2に記載のポリフェニレンエーテル系樹脂組成物。 3. The polyphenylene ether-based resin composition according to claim 2, wherein, in the general formula (I), R 1 represents an alkyl group having 4 to 10 carbon atoms, and R 2 represents an aryl group. 前記一般式(I)において、R2はフェニル基を表す請求項2または3に記載のポリフェニレンエーテル系樹脂組成物。 The polyphenylene ether-based resin composition according to claim 2 or 3, wherein R 2 in the general formula (I) represents a phenyl group. 前記塩素イオン含有量が1000ppm以下である請求項1〜4のうちいずれか一項に記載のポリフェニレンエーテル系樹脂組成物。   The polyphenylene ether-based resin composition according to any one of claims 1 to 4, wherein the chlorine ion content is 1000 ppm or less. スチレン系エストラマー及び難燃剤のうち少なくとも一方を含む請求項1〜5のうちいずれか一項に記載のポリフェニレンエーテル系樹脂組成物。   The polyphenylene ether resin composition according to any one of claims 1 to 5, comprising at least one of a styrene elastomer and a flame retardant. 請求項1に記載のポリフェニレンエーテル系樹脂組成物を製造するにあたり、下記一般式(II)、
Figure 2005082793
(式中、R1およびR2は各々独立にアルキル基またはアリール基を表す)で示されるフェノール系モノマーを塩化銅溶液中にて酸素を通気しながら重合させ、下記一般式(I)、
Figure 2005082793
(式中、R1およびR2は各々独立にアルキル基またはアリール基を表す)で示される繰り返し単位を有するポリフェニレンエーテル系樹脂の粗製物を得、次いで該粗製物を塩素イオンが1500ppm以下となるまで精製することを特徴とするポリフェニレンエーテル系樹脂組成物の製造方法。
In producing the polyphenylene ether-based resin composition according to claim 1, the following general formula (II),
Figure 2005082793
(Wherein R 1 and R 2 each independently represents an alkyl group or an aryl group) are polymerized while aeration of oxygen in a copper chloride solution, and the following general formula (I),
Figure 2005082793
(In the formula, R 1 and R 2 each independently represents an alkyl group or an aryl group) A crude product of a polyphenylene ether resin having a repeating unit is obtained, and then the crude product has a chlorine ion of 1500 ppm or less. A method for producing a polyphenylene ether-based resin composition, wherein
請求項1〜6のうちのいずれか一項に記載のポリフェニレンエーテル系樹脂組成物を主体として含む電子回路用基板。   The board | substrate for electronic circuits which contains the polyphenylene ether-type resin composition as described in any one of Claims 1-6 as a main body. 請求項1〜6のうちのいずれか一項に記載のポリフェニレンエーテル系樹脂組成物をクロス基材に塗工して得られる基材塗工物。   A substrate coated product obtained by coating the polyphenylene ether-based resin composition according to any one of claims 1 to 6 on a cloth substrate. 前記クロス基材がガラスクロスである請求項9に記載の基材塗工物。   The substrate coated product according to claim 9, wherein the cloth substrate is a glass cloth. 請求項1〜6のうちのいずれか1項に記載のポリフェニレンエーテル系樹脂組成物を金属箔上に塗工して得られる金属箔塗工物。   A metal foil coated product obtained by coating the polyphenylene ether-based resin composition according to any one of claims 1 to 6 on a metal foil. 前記金属箔が銅箔である請求項11に記載の金属箔塗工物。   The metal foil coated product according to claim 11, wherein the metal foil is a copper foil. 請求項9又は10に記載の基材塗工物の2枚以上を重ねた状態で加熱加圧成形して得られる電子回路用基板。   The board | substrate for electronic circuits obtained by heat-press molding in the state which accumulated the 2 or more of the base material coated material of Claim 9 or 10. 請求項9又は10に記載の基材塗工物の1枚を、あるいは前記基材塗工物の2枚以上を重ねた状態で、金属箔間に挟んで加熱加圧成形して得られる両面金属貼り電子回路用基板。   A double-sided surface obtained by hot-press molding by sandwiching one of the substrate coated products according to claim 9 or 10 or two or more of the substrate coated materials between metal foils. Metal-clad electronic circuit board. 前記金属箔が銅箔である請求項14に記載の両面金属貼り電子回路用基板。   The board for a double-sided metal-bonded electronic circuit according to claim 14, wherein the metal foil is a copper foil. 請求項11又は12に記載の金属箔塗工物の2枚以上を両外側面が金属箔となるように重ねた状態で加熱加圧成形して得られる両面金属貼り電子回路用基板。   A double-sided metal-bonded electronic circuit board obtained by heat-pressing two or more metal foil coated products according to claim 11 or 12 in a state where both outer side surfaces are metal foils. 請求項9又は10に記載の基材塗工物、請求項13に記載の基板、又は請求項14又は15に記載の両面金属貼り基板の片面又は両面に、請求項11又は12に記載の金属箔塗工物を金属箔が外側面となるように重ねた状態で加熱加圧成形して得られる多層電子回路用基板。   The substrate according to claim 9 or 10, the substrate according to claim 13, or the metal according to claim 11 or 12 on one side or both sides of the double-sided metal-bonded substrate according to claim 14 or 15. A substrate for a multilayer electronic circuit obtained by heating and press-molding a foil coated product in a state where a metal foil is placed on an outer surface.
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Cited By (4)

* Cited by examiner, † Cited by third party
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WO2010147083A1 (en) * 2009-06-17 2010-12-23 利昌工業株式会社 Prepreg comprising high-dielectric-constant resin composition, and copper-clad laminate sheet
WO2010147082A1 (en) * 2009-06-16 2010-12-23 利昌工業株式会社 High-dielectric-constant resin composition, high-dielectric-constant resin sheet comprising same, and copper foil having high-dielectric-constant resin attached thereto
KR101385037B1 (en) * 2011-06-03 2014-04-14 제일모직주식회사 Polyarylene ether and method for preparing the same
CN115725167A (en) * 2021-08-30 2023-03-03 中蓝晨光化工研究设计院有限公司 Low-dielectric-constant low-dielectric-loss polyphenylene ether-based composite material and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010147082A1 (en) * 2009-06-16 2010-12-23 利昌工業株式会社 High-dielectric-constant resin composition, high-dielectric-constant resin sheet comprising same, and copper foil having high-dielectric-constant resin attached thereto
WO2010147083A1 (en) * 2009-06-17 2010-12-23 利昌工業株式会社 Prepreg comprising high-dielectric-constant resin composition, and copper-clad laminate sheet
KR101385037B1 (en) * 2011-06-03 2014-04-14 제일모직주식회사 Polyarylene ether and method for preparing the same
CN115725167A (en) * 2021-08-30 2023-03-03 中蓝晨光化工研究设计院有限公司 Low-dielectric-constant low-dielectric-loss polyphenylene ether-based composite material and preparation method thereof

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