JP2005073374A - Power conversion apparatus - Google Patents

Power conversion apparatus Download PDF

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JP2005073374A
JP2005073374A JP2003299248A JP2003299248A JP2005073374A JP 2005073374 A JP2005073374 A JP 2005073374A JP 2003299248 A JP2003299248 A JP 2003299248A JP 2003299248 A JP2003299248 A JP 2003299248A JP 2005073374 A JP2005073374 A JP 2005073374A
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semiconductor module
main
control circuit
module
power
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JP4003719B2 (en
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Daisuke Harada
大輔 原田
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Denso Corp
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Denso Corp
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Priority to JP2003299248A priority Critical patent/JP4003719B2/en
Application filed by Denso Corp filed Critical Denso Corp
Priority to EP10004701A priority patent/EP2216891B1/en
Priority to EP10004702A priority patent/EP2216892B1/en
Priority to EP04771931A priority patent/EP1657806B1/en
Priority to US10/554,998 priority patent/US7508668B2/en
Priority to PCT/JP2004/011970 priority patent/WO2005020276A2/en
Priority to EP10004700A priority patent/EP2216890B1/en
Publication of JP2005073374A publication Critical patent/JP2005073374A/en
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Publication of JP4003719B2 publication Critical patent/JP4003719B2/en
Priority to US12/073,871 priority patent/US7724523B2/en
Priority to US12/457,246 priority patent/US8027161B2/en
Priority to US12/457,245 priority patent/US7826226B2/en
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a power conversion apparatus which reduces the number of part items and suppresses an influence of a noise from a power wiring part. <P>SOLUTION: The power conversion apparatus includes: a semiconductor module for constituting a part of a power converter circuit; a main circuit part 10 including a cooler for cooling the semiconductor module; a control circuit substrate part 2 electrically connected to a signal terminal of the semiconductor module and controlling the semiconductor module; and a power wiring part 3 connected to a main electrode terminal of the semiconductor module and inputting/outputting current to/from the semiconductor module. The main circuit part 10 is interposed between the control circuit substrate part 2 and the power wiring part 3. It is preferable to provide an electronic part for constituting an at least part of a step-up circuit connected to the semiconductor module in the power wiring part 3. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は,半導体モジュールを用いたインバータ装置等の電力変換装置に関する。   The present invention relates to a power conversion device such as an inverter device using a semiconductor module.

例えば,内燃機関と電気モータの両方を駆動源として有するハイブリッド自動車,その他,電気モータを駆動源として備えた自動車等では,直流電力と交流電力との間で双方向変換する大容量のインバータを必要とする。そのため,このインバータを含む電力変換装置が種々開発されてきた。   For example, in hybrid vehicles that have both an internal combustion engine and an electric motor as drive sources, and other vehicles that have an electric motor as a drive source, a large-capacity inverter that performs bidirectional conversion between DC power and AC power is required. And For this reason, various power converters including this inverter have been developed.

インバータ回路(電力変換回路)は,IGBT素子等を内蔵した半導体モジュールを用いて構成するが,上記のごとく大容量であるため,発熱量も大きい。そのため,従来の電力変換装置9は,図6に示すごとく,上記半導体モジュール92を冷却する冷却装置91を組み込んで構成する。   The inverter circuit (power conversion circuit) is configured by using a semiconductor module incorporating an IGBT element or the like. However, since it has a large capacity as described above, it generates a large amount of heat. Therefore, the conventional power conversion device 9 is configured by incorporating a cooling device 91 for cooling the semiconductor module 92, as shown in FIG.

より具体的には,冷却装置91に対面するように半導体モジュール92を配置し,さらに半導体モジュール92に対面するようにバスバー等の電流を半導体モジュール92に対して入出させるパワー配線部93を配置し,さらにシールド層94を介して,制御回路基板部95を配置して電力変換装置9を構成する。制御回路基板部95は,半導体モジュール92を制御するものであるが,上記パワー配線部93からのノイズの影響を避けるために,上記シールド層94の介設が必須となる。
このような電力変換装置の構造は,例えば特許文献1等にも示されている。
More specifically, the semiconductor module 92 is disposed so as to face the cooling device 91, and further, a power wiring portion 93 that allows a current such as a bus bar to enter and exit the semiconductor module 92 is disposed so as to face the semiconductor module 92. Further, the power conversion device 9 is configured by disposing the control circuit board portion 95 via the shield layer 94. The control circuit board unit 95 controls the semiconductor module 92. However, in order to avoid the influence of noise from the power wiring unit 93, the shield layer 94 is indispensable.
Such a structure of the power conversion device is also shown in, for example, Patent Document 1.

しかしながら,従来の電力変換装置9においては,次のような問題がある。
すなわち,上記従来の電力変換装置9では,制御回路基板部95の動作性能を高めるために,上記シールド層94の介設が不可欠である。そのため,部品点数が増加し,全体のコスト低減要求に対応することが困難となる。
However, the conventional power converter 9 has the following problems.
That is, in the conventional power converter 9, the shield layer 94 is indispensable in order to improve the operation performance of the control circuit board unit 95. As a result, the number of parts increases, making it difficult to meet the overall cost reduction requirements.

また,上記シールド層94の存在によって,パワー配線部93から制御回路基板部95へのノイズの影響を低減はできるものの,依然として,制御回路基板部95と半導体モジュール92とを接続する接続線955がシールド層94及びパワー配線部93の部分を貫通する構造となる。そのため,上記接続線95へのノイズの影響をなくすことが困難である。
特開平11−69774号公報
Further, although the influence of noise from the power wiring portion 93 to the control circuit board portion 95 can be reduced by the presence of the shield layer 94, the connection line 955 for connecting the control circuit board portion 95 and the semiconductor module 92 is still provided. The shield layer 94 and the power wiring portion 93 are penetrated. Therefore, it is difficult to eliminate the influence of noise on the connection line 95.
JP-A-11-69774

本発明は,かかる従来の問題点に鑑みてなされたもので,部品点数を削減することができ,かつ,パワー配線部からのノイズの影響を抑制することができる電力変換装置を提供しようとするものである。   The present invention has been made in view of such conventional problems, and intends to provide a power conversion device capable of reducing the number of parts and suppressing the influence of noise from the power wiring portion. Is.

本発明は,電力変換回路の一部を構成する半導体モジュールと,該半導体モジュールを冷却する冷却装置とを含む主回路部と,
上記半導体モジュールの信号端子に電気的に接続され,上記半導体モジュールを制御する制御回路を有する制御回路基板部と,
上記半導体モジュールの主電極端子に接続され,上記半導体モジュールに対して電流を入出させるパワー配線部とを有してなり,
上記主回路部は,上記制御回路基板部と上記パワー配線部との間に介在させてあることを特徴とする電力変換装置にある(請求項1)。
The present invention includes a main circuit unit including a semiconductor module constituting a part of a power conversion circuit and a cooling device for cooling the semiconductor module;
A control circuit board portion electrically connected to a signal terminal of the semiconductor module and having a control circuit for controlling the semiconductor module;
A power wiring portion connected to the main electrode terminal of the semiconductor module and allowing current to flow into and out of the semiconductor module;
The main circuit section is provided between the control circuit board section and the power wiring section, in a power converter (claim 1).

本発明の電力変換装置は,上記のごとく,半導体モジュールとその冷却装置とよりなる主回路部を,上記制御回路基板部とパワー配線部とによって挟持するように配置してある。そのため,上記主回路部が,上記制御回路基板部とパワー配線部との間におけるシールド部として機能し,パワー配線部からの電気的なノイズが制御回路基板部に伝わることを抑制することができる。これにより,従来必要であったシールド層を不要にすることができ,部品点数を減らすことができる。   As described above, the power conversion device of the present invention is arranged so that the main circuit portion composed of the semiconductor module and its cooling device is sandwiched between the control circuit board portion and the power wiring portion. Therefore, the main circuit part functions as a shield part between the control circuit board part and the power wiring part, and electrical noise from the power wiring part can be prevented from being transmitted to the control circuit board part. . As a result, the shield layer, which has been conventionally required, can be eliminated, and the number of parts can be reduced.

また,上記主回路部と上記制御回路基板部とは隣接して配置しているので,両者の間の電気的接合部は,両者の境界部分に配置することができ,上記パワー配線部を貫通させる必要がない。それ故,さらにパワー配線部から制御回路基板部への電気的なノイズの影響を抑制することができる。
このように,本発明によれば,部品点数を削減することができ,かつ,パワー配線部からのノイズの影響を抑制することができる電力変換装置を提供することができる。
Also, since the main circuit part and the control circuit board part are arranged adjacent to each other, the electrical junction between them can be arranged at the boundary part between them and penetrate the power wiring part. There is no need to let them. Therefore, the influence of electrical noise from the power wiring portion to the control circuit board portion can be further suppressed.
Thus, according to the present invention, it is possible to provide a power conversion device that can reduce the number of components and can suppress the influence of noise from the power wiring portion.

本発明の電力変換装置において,上記パワー配線部は,例えば三相モータに連結されるバスバー等と,これらと上記半導体モジュールの上記主電極端子との接続部等により構成され,制御すべき電流を半導体モジュールに入力すると共に半導体モジュールから出力する部分である。
また,上記制御回路基板部は,上記半導体モジュールの信号端子に接続され,半導体モジュールに対して制御信号を送る制御回路を有してなる部分である。
そして,上記主回路部は,上記半導体モジュールとこれを冷却する冷却装置とを含んで構成される。
上記半導体モジュールとしては,1種又は複数の半導体素子を用いて構成し,上記主電極端子と信号端子とを設けたものを用いる。この半導体モジュールとしては,後述するごとく,両面冷却タイプ,すなわち,一方の面からだけでなく,これに対向するもう一つの面から冷却できる構造のものが好ましい。
In the power conversion device of the present invention, the power wiring portion is constituted by, for example, a bus bar connected to a three-phase motor and a connection portion between the bus bar and the main electrode terminal of the semiconductor module. This is a part that inputs to the semiconductor module and outputs from the semiconductor module.
The control circuit board portion is a portion having a control circuit that is connected to a signal terminal of the semiconductor module and sends a control signal to the semiconductor module.
The main circuit unit includes the semiconductor module and a cooling device for cooling the semiconductor module.
The semiconductor module is configured by using one or a plurality of semiconductor elements and provided with the main electrode terminal and the signal terminal. As described later, this semiconductor module is preferably a double-sided cooling type, that is, a structure that can be cooled not only from one surface but also from the other surface facing it.

また,上記パワー配線部には,上記半導体モジュールに接続される電子部品を併設してあることが好ましい(請求項2)。上記電子部品は,該電子部品そのもの、もしくはそれにつながるバスバが電気的なノイズを発する場合があり,上記パワー配線部に配置することが好ましい。これにより,上記電子部品からの上記制御回路基板部への電気的なノイズの影響を抑制することができる。上記電子部品としては,例えば,リアクトル,コンデンサ等の部品がある。また、これら電子部品により昇圧回路が構成される(請求項3)。   Moreover, it is preferable that an electronic component connected to the semiconductor module is provided in the power wiring portion. The electronic component itself or the bus bar connected to the electronic component itself may generate electrical noise, and is preferably arranged in the power wiring portion. Thereby, it is possible to suppress the influence of electrical noise from the electronic component to the control circuit board portion. Examples of the electronic components include components such as a reactor and a capacitor. Further, a booster circuit is constituted by these electronic components (claim 3).

また,上記半導体モジュールは,半導体を内蔵したモジュール本体部と,該モジュール本体部から突出させた上記主電極端子と,該主電極端子の突出方向と略180度異なる方向へ突出させた上記信号端子とよりなり,上記冷却装置は,上記モジュール本体部を両面から挟持するように配置される一対の冷媒チューブを有し,該冷媒チューブ内に冷却媒体を流通させることにより,上記モジュール本体部を両面から冷却するよう構成されており,かつ,上記半導体モジュールは,上記一対の冷媒チューブの長手方向に対して略直角の互いに異なる方向に上記主電極端子と上記信号端子とがそれぞれ突出するように配置してあることが好ましい(請求項4)。   In addition, the semiconductor module includes a module main body containing a semiconductor, the main electrode terminal protruding from the module main body, and the signal terminal protruding in a direction different from the protruding direction of the main electrode terminal by approximately 180 degrees. The cooling device has a pair of refrigerant tubes arranged so as to sandwich the module main body from both sides, and the cooling medium is circulated in the refrigerant tubes, whereby the module main body is arranged on both sides. The semiconductor module is arranged so that the main electrode terminal and the signal terminal protrude in different directions substantially perpendicular to the longitudinal direction of the pair of refrigerant tubes, respectively. (Claim 4).

この場合には,上記半導体モジュールと上記冷媒チューブとを並列して配置することができ,かつ,その配列方向に直交する異なる方向に上記主電極端子と信号端子とをそれぞれ配置することができる。そのため,上記半導体モジュールと冷媒チューブとを配列してなる主回路部の両面に上記制御回路基板部とパワー配線部とを振り分けて配置することが非常に容易となる。   In this case, the semiconductor module and the refrigerant tube can be arranged in parallel, and the main electrode terminal and the signal terminal can be arranged in different directions orthogonal to the arrangement direction. Therefore, it becomes very easy to distribute and arrange the control circuit board part and the power wiring part on both surfaces of the main circuit part in which the semiconductor modules and the refrigerant tubes are arranged.

また,上記主回路部は,上記冷媒チューブと上記半導体モジュールとを交互に複数積層した積層構造を有しており,その積層方向と直交する方向の一面から上記半導体モジュールの上記主電極端子を突出させると共にその反対面から上記信号端子を突出させていることが好ましい(請求項5)。
この場合には,半導体モジュールと冷媒チューブとの積層構造体を一つのユニットとしてまとめることが容易となり,主回路部全体をコンパクト化することができると共に,製造上の取り扱いを容易にすることができる。
The main circuit portion has a laminated structure in which a plurality of the refrigerant tubes and the semiconductor modules are alternately laminated, and the main electrode terminal of the semiconductor module projects from one surface in a direction orthogonal to the lamination direction. Preferably, the signal terminal protrudes from the opposite surface.
In this case, the laminated structure of the semiconductor module and the refrigerant tube can be easily combined as one unit, the entire main circuit part can be made compact, and the handling in manufacturing can be facilitated. .

なお,上記半導体モジュールと冷媒チューブとの配列は,上記1列の半導体モジュールを挟持する2つ1組の冷媒チューブを一単位とし,この単位を繰り返し配置する配列方法を採用することもできる。この場合には,上記一単位のものを複数作製し,これらを並列に配置し,複数の冷媒チューブを一対のヘッダ部により連結することによって全体をユニット化することができる。   The arrangement of the semiconductor modules and the refrigerant tubes may be an arrangement method in which a set of two refrigerant tubes sandwiching the one row of semiconductor modules is used as one unit, and the units are repeatedly arranged. In this case, the whole unit can be unitized by producing a plurality of the one unit, arranging them in parallel, and connecting a plurality of refrigerant tubes by a pair of header portions.

(実施例1)
本発明の実施例に係る電力変換装置につき,図1〜図4を用いて説明する。
本例の電力変換装置1は,ハイブリッド自動車用の電力変換装置であり,図1に示すごとく,主回路部10と制御回路基板部2とパワー配線部3とよりなる。そして,主回路部10は,上記制御回路基板部2と上記パワー配線部3との間に介在させてある。
(Example 1)
A power converter according to an embodiment of the present invention will be described with reference to FIGS.
The power conversion device 1 of this example is a power conversion device for a hybrid vehicle, and includes a main circuit unit 10, a control circuit board unit 2, and a power wiring unit 3 as shown in FIG. The main circuit unit 10 is interposed between the control circuit board unit 2 and the power wiring unit 3.

図2,図3に示すごとく,上記主回路部10は,電力変換回路の一部を構成する半導体モジュール4と,該半導体モジュール4を冷却する冷却装置5とを含んで構成されている。また,上記制御回路基板部2は,半導体モジュール4の信号端子42に電気的に接続され,上記半導体モジュール4を制御する制御回路(図示略)を有する基板である。また,パワー配線部3は,半導体モジュール4の主電極端子41に接続され,上記半導体モジュール4に対して電流を入出させる部分である。   As shown in FIGS. 2 and 3, the main circuit unit 10 includes a semiconductor module 4 that constitutes a part of the power conversion circuit, and a cooling device 5 that cools the semiconductor module 4. The control circuit board 2 is a board that is electrically connected to the signal terminal 42 of the semiconductor module 4 and has a control circuit (not shown) for controlling the semiconductor module 4. The power wiring portion 3 is a portion that is connected to the main electrode terminal 41 of the semiconductor module 4 and allows current to flow into and out of the semiconductor module 4.

本例においては,図2,図3(b)に示すごとく,半導体モジュール4として,半導体素子を内蔵したモジュール本体部40と,該モジュール本体部40から突出させた主電極端子41と,該主電極端子41の突出方向と略180度異なる方向へ突出させた上記信号端子42とよりなる。そして,モジュール本体部40は,その主面両面401,402に上記主電極端子41に導通する放熱板451を露出させてある。   In this example, as shown in FIGS. 2 and 3B, the semiconductor module 4 includes a module main body 40 incorporating a semiconductor element, a main electrode terminal 41 protruding from the module main body 40, and the main module 40. The signal terminal 42 protrudes in a direction different from the protruding direction of the electrode terminal 41 by approximately 180 degrees. The module main body 40 has heat radiation plates 451 that are electrically connected to the main electrode terminals 41 exposed on both main surfaces 401 and 402 thereof.

冷却装置5は,図3(b)に示すごとく,モジュール本体部40を両面から挟持するように配置される一対の冷媒チューブ51を有している。本例では,一対の冷媒チューブ51の間に2つの半導体モジュール4を並べて挟持させた。そして,全体的には,冷媒チューブ51と半導体モジュール4の列とを交互に積層して上記主回路部10を構成した。これにより,すべての半導体モジュール4は,その両面401,402を冷媒チューブ51により挟持された状態となる。   As shown in FIG. 3B, the cooling device 5 has a pair of refrigerant tubes 51 arranged so as to sandwich the module main body 40 from both sides. In this example, two semiconductor modules 4 are sandwiched between a pair of refrigerant tubes 51. As a whole, the main circuit unit 10 is configured by alternately stacking the refrigerant tubes 51 and the rows of the semiconductor modules 4. As a result, all the semiconductor modules 4 are in a state where both surfaces 401 and 402 are sandwiched between the refrigerant tubes 51.

各冷媒チューブ51は,その内部に図示しない冷媒通路を有しており,これに冷却媒体を流通可能に構成してある。また,同図に示すごとく,複数の冷媒チューブ51の両端をそれぞれ連結するように蛇腹パイプ59を配置し,ヘッダ部50を形成してある。そして,冷媒チューブ51内に冷却媒体を流通させることにより,モジュール本体部40を両面401,402から冷却することができる。また,各半導体モジュール4は,上記一対の冷媒チューブ51の長手方向に対して略直角の互いに異なる方向に主電極端子41と信号端子42とがそれぞれ突出するように配置される。これにより,半導体モジュール4と冷媒チューブ51とを配列してなる主回路部10の両面に上記制御回路基板部2とパワー配線部3とを振り分けて配置することが非常に容易となる。   Each refrigerant tube 51 has a refrigerant passage (not shown) therein, and is configured to allow a cooling medium to flow therethrough. Further, as shown in the figure, a bellows pipe 59 is arranged so as to connect both ends of the plurality of refrigerant tubes 51, and a header portion 50 is formed. The module main body 40 can be cooled from both surfaces 401 and 402 by circulating a cooling medium in the refrigerant tube 51. Each semiconductor module 4 is disposed such that the main electrode terminal 41 and the signal terminal 42 protrude in different directions substantially perpendicular to the longitudinal direction of the pair of refrigerant tubes 51. Thereby, it becomes very easy to distribute and arrange the control circuit board part 2 and the power wiring part 3 on both surfaces of the main circuit part 10 in which the semiconductor modules 4 and the refrigerant tubes 51 are arranged.

また,制御回路基板部2は,図3(c)に示すごとく,半導体モジュール4の信号端子42を挿入配置する接続穴22を複数有しており,この接続穴22に信号端子42を挿入することによって制御回路と信号端子42とが電気的に接続されるように構成されている。なお,制御回路基板部2に立設させた支持棒29は,主回路部10の冷媒チューブ51に当接して,主回路部10と制御回路基板部2との間の距離を一定に保つためのスペーサとして機能するものである。   Further, as shown in FIG. 3C, the control circuit board portion 2 has a plurality of connection holes 22 into which the signal terminals 42 of the semiconductor module 4 are inserted, and the signal terminals 42 are inserted into the connection holes 22. Thus, the control circuit and the signal terminal 42 are configured to be electrically connected. The support rod 29 erected on the control circuit board portion 2 abuts on the refrigerant tube 51 of the main circuit portion 10 to keep the distance between the main circuit portion 10 and the control circuit board portion 2 constant. It functions as a spacer.

また,パワー配線部3は,図3(a)に示すごとく,図示しない三相モータに接続される複数のバスバー31と,これらの一部をモールドした樹脂モールド部30とにより構成されている。またパワー配線部3の主回路部10に面した面302には,上記半導体モジュール4の主電極端子41に接合される接合端子部(図示略)が複数設けられている。   Further, as shown in FIG. 3A, the power wiring portion 3 includes a plurality of bus bars 31 connected to a three-phase motor (not shown) and a resin mold portion 30 obtained by molding a part of them. A plurality of junction terminal portions (not shown) that are joined to the main electrode terminals 41 of the semiconductor module 4 are provided on the surface 302 of the power wiring portion 3 facing the main circuit portion 10.

そして,図3,図4に示すごとく,主回路部10の上方にパワー配線部3を隣接配置し,下方に制御回路基板部2を隣接配置し,かつ,半導体モジュール4の主電極端子41とパワー配線部3を電気的に接続し,信号端子42を制御回路基板部2に電気的に接合することによって,本例の電力変換装置1が得られる。   As shown in FIGS. 3 and 4, the power wiring portion 3 is adjacently disposed above the main circuit portion 10, the control circuit board portion 2 is adjacently disposed below the main circuit portion 10, and the main electrode terminal 41 of the semiconductor module 4 By electrically connecting the power wiring part 3 and electrically joining the signal terminal 42 to the control circuit board part 2, the power conversion device 1 of this example is obtained.

本例の電力変換装置1は,上記のごとく,半導体モジュール4とその冷却装置5とよりなる主回路部10を,上記制御回路基板部2とパワー配線部3とによって挟持するように配置してある。そのため,上記主回路部10が,上記制御回路基板部2とパワー配線部3との間におけるシールド部として機能し,パワー配線部3からの電気的なノイズが制御回路基板部2に伝わることを抑制することができる。これにより,従来必要であったシールド層を不要にすることができ,部品点数を減らすことができる。   As described above, the power conversion device 1 of this example is arranged so that the main circuit unit 10 including the semiconductor module 4 and the cooling device 5 is sandwiched between the control circuit board unit 2 and the power wiring unit 3. is there. Therefore, the main circuit section 10 functions as a shield section between the control circuit board section 2 and the power wiring section 3, and electrical noise from the power wiring section 3 is transmitted to the control circuit board section 2. Can be suppressed. As a result, the shield layer, which has been conventionally required, can be eliminated, and the number of parts can be reduced.

また,主回路部10と制御回路基板部2とは隣接して配置しているので,両者の間の電気的接合部は,両者の境界部分に配置することができ,上記パワー配線部3を貫通させる必要がない。それ故,さらにパワー配線部3から制御回路基板部2への電気的なノイズの影響を抑制することができる。   Further, since the main circuit unit 10 and the control circuit board unit 2 are arranged adjacent to each other, the electrical junction between them can be arranged at the boundary between the two, and the power wiring unit 3 can be There is no need to penetrate. Therefore, the influence of electrical noise from the power wiring part 3 to the control circuit board part 2 can be further suppressed.

さらに,本例では,上記半導体モジュール4として,両面冷却可能であると共に,主電極端子41と信号端子42とを略180度異なる方向へ突出させた構造のものを採用した。そしてこの構造を最大限利用して,上記のごとく冷媒チューブ51との積層構造を実現すると共に,その積層方向と直交する異なる方向に主電極端子41と信号端子42とがそれぞれ突出するような構造とした。これにより,半導体モジュール4の冷却効率の向上と,主回路部10の両面に制御回路基板部2とパワー配線部3とを振り分けて配置する構造の実現を容易に成し遂げることができた。   Further, in this example, the semiconductor module 4 has a structure in which both surfaces can be cooled and the main electrode terminal 41 and the signal terminal 42 protrude in directions different by about 180 degrees. Then, by making the best use of this structure, a stacked structure with the refrigerant tube 51 is realized as described above, and the main electrode terminal 41 and the signal terminal 42 protrude in different directions orthogonal to the stacked direction. It was. As a result, the cooling efficiency of the semiconductor module 4 can be improved and the structure in which the control circuit board 2 and the power wiring part 3 are distributed and arranged on both surfaces of the main circuit part 10 can be easily achieved.

なお,本例では,制御回路基板部2の上方に主回路部10を,さらにその上方にパワー配線部3を配置した構造としたが,この相対的な関係を維持したまま,上下方向を逆転させた形態,あるいは,90度反転させた形態などに変更することは勿論可能である。   In this example, the main circuit unit 10 is arranged above the control circuit board unit 2 and the power wiring unit 3 is arranged above the control circuit board unit 2. However, the vertical direction is reversed while maintaining this relative relationship. Of course, it is possible to change it to a form that has been reversed or 90 degrees.

(実施例2)
本例は,図5に示すごとく,実施例1における電力変換装置1を基にして,そのパワー配線部3に,昇圧回路の一部を構成するリアクトル61とコンデンサ62とを配設した例である。
この場合には,昇圧回路を構成する電子部品であるリアクトル61及びコンデンサ62から制御回路基板部3への電気的なノイズの影響を抑制することができる。
その他は実施例1と同様の作用効果が得られる。
(Example 2)
As shown in FIG. 5, this example is an example in which a reactor 61 and a capacitor 62 that constitute a part of a booster circuit are arranged in the power wiring unit 3 based on the power converter 1 in the first embodiment. is there.
In this case, the influence of electrical noise from the reactor 61 and the capacitor 62, which are electronic components constituting the booster circuit, to the control circuit board unit 3 can be suppressed.
In other respects, the same effects as those of the first embodiment can be obtained.

実施例1における、電力変換装置の各部の配置を示す説明図。Explanatory drawing which shows arrangement | positioning of each part of the power converter device in Example 1. FIG. 実施例1における、半導体モジュールを示す説明図。BRIEF DESCRIPTION OF THE DRAWINGS FIG. 実施例1における、(a)パワー配線部、(b)主回路部、(c)制御回路基板部をそれぞれ示す説明図。FIG. 3 is an explanatory diagram showing (a) a power wiring portion, (b) a main circuit portion, and (c) a control circuit board portion in the first embodiment. 実施例1における、電力変換装置の構成を示す説明図。Explanatory drawing which shows the structure of the power converter device in Example 1. FIG. 実施例2における、電力変換装置の構成を示す説明図。Explanatory drawing which shows the structure of the power converter device in Example 2. FIG. 従来例における、電力変換装置の各部の配置を示す説明図。Explanatory drawing which shows arrangement | positioning of each part of the power converter device in a prior art example.

符号の説明Explanation of symbols

1 電力変換装置
10 主回路部
2 制御回路基板部
3 パワー配線部
31 バスバー
4 半導体モジュール
41 主電極端子
42 信号端子
5 冷却装置
51 冷媒チューブ
DESCRIPTION OF SYMBOLS 1 Power converter 10 Main circuit part 2 Control circuit board part 3 Power wiring part 31 Bus bar 4 Semiconductor module 41 Main electrode terminal 42 Signal terminal 5 Cooling device 51 Refrigerant tube

Claims (5)

電力変換回路の一部を構成する半導体モジュールと,該半導体モジュールを冷却する冷却装置とを含む主回路部と,
上記半導体モジュールの信号端子に電気的に接続され,上記半導体モジュールを制御する制御回路を有する制御回路基板部と,
上記半導体モジュールの主電極端子に接続され,上記半導体モジュールに対して電流を入出させるパワー配線部とを有してなり,
上記主回路部は,上記制御回路基板部と上記パワー配線部との間に介在させてあることを特徴とする電力変換装置。
A main circuit unit including a semiconductor module constituting a part of the power conversion circuit, and a cooling device for cooling the semiconductor module;
A control circuit board portion electrically connected to a signal terminal of the semiconductor module and having a control circuit for controlling the semiconductor module;
A power wiring portion connected to the main electrode terminal of the semiconductor module and allowing current to flow into and out of the semiconductor module;
The power converter according to claim 1, wherein the main circuit section is interposed between the control circuit board section and the power wiring section.
請求項1において,上記パワー配線部には,上記半導体モジュールに接続される電子部品を併設してあることを特徴とする電力変換装置。   2. The power converter according to claim 1, wherein the power wiring unit is provided with an electronic component connected to the semiconductor module. 請求項2において,上記電子部品は,昇圧回路の少なくとも一部を構成していることを特徴とする電力変換装置。   3. The power conversion device according to claim 2, wherein the electronic component constitutes at least a part of a booster circuit. 請求項1〜3のいずれか1項において,上記半導体モジュールは,半導体素子を内蔵したモジュール本体部と,該モジュール本体部から突出させた上記主電極端子と,該主電極端子の突出方向と略180度異なる方向へ突出させた上記信号端子とよりなり,
上記冷却装置は,上記モジュール本体部を両面から挟持するように配置される一対の冷媒チューブを有し,該冷媒チューブ内に冷却媒体を流通させることにより,上記モジュール本体部を両面から冷却するよう構成されており,
かつ,上記半導体モジュールは,上記一対の冷媒チューブの長手方向に対して略直角の互いに異なる方向に上記主電極端子と上記信号端子とがそれぞれ突出するように配置してあることを特徴とする電力変換装置。
4. The semiconductor module according to claim 1, wherein the semiconductor module includes a module main body including a semiconductor element, the main electrode terminal protruding from the module main body, and a protruding direction of the main electrode terminal. It consists of the above signal terminals protruding in different directions by 180 degrees,
The cooling device has a pair of refrigerant tubes arranged to sandwich the module main body from both sides, and cools the module main body from both sides by circulating a cooling medium in the refrigerant tubes. Configured,
The semiconductor module is arranged such that the main electrode terminal and the signal terminal protrude in different directions substantially perpendicular to the longitudinal direction of the pair of refrigerant tubes, respectively. Conversion device.
請求項4において,上記主回路部は,上記冷媒チューブと上記半導体モジュールとを交互に複数積層した積層構造を有しており,その積層方向と直交する方向の一面から上記半導体モジュールの上記主電極端子を突出させると共にその反対面から上記信号端子を突出させていることを特徴とする電力変換装置。   5. The main circuit portion according to claim 4, wherein the main circuit portion has a laminated structure in which a plurality of the refrigerant tubes and the semiconductor modules are alternately laminated, and the main electrode of the semiconductor module is formed from one surface in a direction orthogonal to the lamination direction. A power conversion device characterized in that the terminal protrudes and the signal terminal protrudes from the opposite surface.
JP2003299248A 2003-08-21 2003-08-22 Power converter Expired - Lifetime JP4003719B2 (en)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP2003299248A JP4003719B2 (en) 2003-08-22 2003-08-22 Power converter
EP10004702A EP2216892B1 (en) 2003-08-21 2004-08-20 Mounting structure of a semiconductor device
EP04771931A EP1657806B1 (en) 2003-08-21 2004-08-20 Power converter and semiconductor device mounting structure
US10/554,998 US7508668B2 (en) 2003-08-21 2004-08-20 Electric power converter and mounting structure of semiconductor device
PCT/JP2004/011970 WO2005020276A2 (en) 2003-08-21 2004-08-20 Power converter and semiconductor device mounting structure
EP10004700A EP2216890B1 (en) 2003-08-21 2004-08-20 Mounting structure of a semiconductor device
EP10004701A EP2216891B1 (en) 2003-08-21 2004-08-20 Mounting structure ofa semiconductor device
US12/073,871 US7724523B2 (en) 2003-08-21 2008-03-11 Electric power converter and mounting structure of semiconductor device
US12/457,246 US8027161B2 (en) 2003-08-21 2009-06-04 Electronic power converter and mounting structure of semiconductor device
US12/457,245 US7826226B2 (en) 2003-08-21 2009-06-04 Electric power converter and mounting structure of semiconductor device

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