JP2005073342A - Packaging structure of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the packaging structure of a semiconductor device in which releasing of noise generated at a semiconductor element is effectively suppressed without externally attaching a bypass capacitor. <P>SOLUTION: The semiconductor device comprises a power semiconductor element, first and second electrode plates jointed to one and the other surfaces of the semiconductor element, a connection terminal for a control circuit that controls the semiconductor element, a semiconductor module 30 comprising an insulating resin mold for sealing the semiconductor element and the first and second electrode plates, and conductive first and second holding members 55A and 55B for holding from both sides the semiconductor module through first and second insulating members 50A and 50B that are to be derivatives. The first and/or the second electrode plate, the first and/or the second holding member, and the first and/or the second insulating member constitute noise suppressing bypass capacitors 57A and 57B which prevent the noise generated at the semiconductor element from being released to a bus bar. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device mounting structure, and more particularly to noise suppression in a semiconductor device used as an inverter device.

  The direct current of the direct current power source may be converted into alternating current by an inverter device (semiconductor device) to drive the alternating current machine. For example, in an electric vehicle and a hybrid vehicle, as shown in FIG. 19, the direct current of the battery 500 is converted into alternating current by the inverter device 510, and the alternating current generator 505 is driven. Inverter device 510 includes a plurality of semiconductor modules.

  As is well known, each semiconductor module has an internal semiconductor element (switch element) 511, a pair of electrodes on both sides thereof, and a signal terminal connected to an external control circuit. The semiconductor element is switched by a control signal input from the control circuit via a signal terminal, and a pseudo alternating current is generated.

  During the operation of the semiconductor module, high-frequency noise is generated in the energization portion and is emitted from the DC power lines 514 and 515 and the AC power line 516. In order to prevent this, the high frequency capacitors 521, 522 and 523 are connected via the lead wire 526 between the DC power lines 514 and 515 and the ground, and between the AC power line 516 and the ground, thereby bypassing the noise component. It is like that.

  On the other hand, the conventional self-excited rectifier circuit shown in FIG. 20 (see Patent Document 1) includes self-excited rectifier circuits 532 and 535 that convert alternating current supplied from the commercial power supply 530 into a desired direct-current voltage. Noise generated due to the switching operation of the rectifying element 536 constituting the rectifying circuit portion 535 flows into the commercial power source 530 and has an adverse effect.

In order to prevent this, a noise suppression circuit 540 is disposed between the self-excited rectifier circuit portions 532 and 535. The noise suppression circuit 540 includes a noise suppression reactor 542 disposed on each phase line 541, a capacitor 544 disposed between each phase line 541, and a capacitor 546 disposed between one phase line and ground. The noise suppression reactor 542 and the capacitor 544 suppress the emission of normal mode noise, and the capacitor 546 suppresses the emission of common mode noise.
JP 07-308070 A

  Inverter devices such as electric vehicles have the following problems. The lead wire 526 connecting the high frequency capacitors 521 to 523 to the power lines 514 to 516 has a large resistance component and inductance component. In order to reduce the impedance of the bypass path and obtain a sufficient noise suppression effect, it is necessary to increase the capacitance of the high frequency capacitors 521 to 523. As a result, the high-frequency current passing through the high-frequency capacitor becomes a leakage current, which may cause a malfunction of the inverter device.

  Further, since the semiconductor module that is a noise generation source and the high frequency capacitors 521 to 523 that bypass the noise are separated from each other, a certain amount of noise emission from the power lines 514 to 516 cannot be avoided.

  On the other hand, the self-excited rectifier circuit only shows the arrangement of the reactor 542 on each phase line 541 and the capacitor 544 between the phase lines 541, but does not show a specific mounting method of the capacitors 544 and 645. In any case, if capacitors 544 and 546 are provided, the cost and space increase accordingly. In addition, a resistance component or the like exists in the lead wire that connects the capacitors 521 to 523 to the phase wire 541. Further, the capacitors 544 and 546 are separated from the rectifier circuit portion 535, and noise is easily emitted from the phase line 541 between them.

  The present invention has been made in view of the above circumstances, and provides a semiconductor device mounting structure capable of effectively suppressing the emission of noise generated in a semiconductor element without externally attaching a special bypass capacitor. Objective.

  The present invention provides a part of a semiconductor module, a part of a holding member, or a part between a semiconductor element of a semiconductor module and a holding member that holds the semiconductor module from both sides, or between a semiconductor element and a case that houses the semiconductor module. A bypass capacitor is formed as a dielectric by interposing another mediating member.

 (1) The mounting structure of the semiconductor device according to the first invention of the present application includes, as described in the claims, a power semiconductor element, a first electrode plate and a second electrode joined to one surface and the other surface of the semiconductor element, respectively. A semiconductor module including a connection terminal between the electrode plate and a control circuit for controlling the semiconductor element, and an insulating resin mold for sealing the semiconductor element and the first electrode plate and the second electrode plate; And a conductive first holding member and a second holding member for holding the semiconductor module from both sides via the first insulating member and the second insulating member.

  Noise generated during the operation of the semiconductor module is the first electrode plate and / or the second electrode plate, the first holding member and / or the second holding member, and the first electrode located between the electrode plate and the holding member. Absorption by a noise suppressing bypass capacitor constituted by the insulating member and / or the second insulating member is prevented, and emission to a power line or the like is prevented.

  The mounting structure of claim 2 is the mounting structure according to claim 1, wherein a part of the first electrode plate and the second electrode plate is exposed, and the first insulating member and the second insulating member are exposed of the first electrode plate and the second electrode plate. It is the insulating board interposed between the part and the 1st holding member and the 2nd holding member.

  A mounting device according to a third aspect is the mounting device according to the first aspect, wherein a part of the first electrode plate and the second electrode plate is exposed, and the first insulating member and the second insulating member are integrated with the resin mold, It is an insulating film that covers the exposed portion of the second electrode plate. According to a fourth aspect of the present invention, there is provided the mounting apparatus according to the first aspect, wherein a part of the first electrode plate and the second electrode plate is exposed, and the first insulating member and the second insulating member are exposed to the first holding member and the second holding member. It is an insulating film integrated so as to face the part.

  According to a fifth aspect of the present invention, in the mounting device according to the second, third, or fourth aspect, the first holding member and the second holding member are grounded. The mounting apparatus according to claim 6 is the mounting structure according to claim 2, 3 or 4, wherein the first holding member and the second holding member have a conductive cooling medium circulated therein and the cooling medium is grounded.

 (2) The semiconductor device mounting structure according to the second invention of the present application is as described in claim 7, wherein the power semiconductor element, the first electrode plate and the second electrode respectively joined to one side and the other side of the semiconductor element are provided. A semiconductor module comprising: an electrode plate; a connection terminal for a control circuit that controls the semiconductor element; and an insulating resin mold that seals the semiconductor element and the first electrode plate and the second electrode plate; The first internal member and the second internal member are inserted to hold the semiconductor module from both sides, and include an insulating first holding member and second holding member that are derivatives.

  The noise generated during the operation of the semiconductor module is a first holding located between the first electrode plate and / or the second electrode plate, the first internal member and / or the second internal member, and the electrode plate and the internal member. It is absorbed by a noise suppressing bypass capacitor constituted by the member and / or the wall portion of the second holding member, and emission to a power line or the like is prevented.

  The mounting device of claim 8 is the mounting device according to claim 7, wherein the first internal member and the second internal member are grounded. According to a ninth aspect of the present invention, in the mounting device according to the seventh aspect, the first internal member and the second internal member are circulated through a conductive cooling medium, and the cooling medium is grounded.

 (3) According to a third aspect of the present invention, there is provided a mounting structure for a semiconductor device according to a tenth aspect of the present invention, wherein a power semiconductor element, a first electrode plate and a second electrode joined to one side and the other side of the semiconductor element, respectively. A semiconductor module comprising: an electrode plate; a connection terminal for a control circuit for controlling the semiconductor element; and an insulating resin mold for sealing the semiconductor element and the first electrode plate and the second electrode plate; and conductive cooling And a metal case in which a plurality of semiconductor modules are arranged close to each other in a cooling medium.

  Noise generated during the operation of the semiconductor module is caused by the first and / or second electrode plate, the cooling medium, and the first mold portion and / or the second mold of the resin mold located between the electrode plate and the cooling medium. It is absorbed by a noise suppressing bypass capacitor composed of a mold part and is prevented from being emitted to a power line or the like.

  The mounting structure of claim 11 is the mounting structure of claim 10, wherein the cooling medium is grounded.

 (1) According to the mounting structure of the semiconductor device according to the first aspect of the present invention, noise emission generated in the power semiconductor element is for noise suppression using an insulating member located between the electrode plate and the holding member as a dielectric. Suppressed by bypass capacitor. As a result, a dedicated bypass capacitor is not required to suppress noise emission, and the labor and time for externally attaching the capacitor are not required, thereby reducing the cost.

  In addition, since the bypass capacitor is disposed in the vicinity of the semiconductor element and for each semiconductor element, the effect of suppressing the emission noise is reliable and effective. Further, since the holding member is conductive, the grounding is easy.

  According to the mounting structure of the second aspect, the insulating plate interposed between the semiconductor module and the conductive holding member becomes the dielectric. Therefore, a general-purpose semiconductor module and holding tube can be used as they are, and an increase in cost can be minimized.

  According to the mounting structure of claim 3, the insulating film integrated with the resin mold of the semiconductor module becomes the dielectric. According to the mounting structure of claim 4, the insulating film integrated with the holding tube becomes the dielectric. Therefore, in any case, the bypass capacitor can be easily formed by slightly improving the general-purpose semiconductor module and the holding tube.

  According to the mounting structure of the fifth aspect, since the holding member is grounded, noise suppression by the bypass capacitor is more reliable. According to the mounting structure of the sixth aspect, the cooling medium which is originally a cooling means for the semiconductor element can be used as the grounding means, and noise can be more reliably suppressed.

 (2) According to the mounting structure of the semiconductor device according to the second aspect of the invention, noise generated in the power semiconductor element is generated by the wall of the holding member located between the electrode plate and the holding member. Suppressed by a suppression bypass capacitor. As a result, a dedicated bypass capacitor is not required to suppress noise emission, and the labor and time for externally attaching the capacitor are not required, thereby reducing the cost.

  In addition, since the bypass capacitor is disposed in the vicinity of the semiconductor element and for each semiconductor element, the effect of suppressing the emission noise is reliable and effective. Furthermore, since the holding member is insulative, the selection range of the material is widened, and the weight is reduced depending on the material.

  According to the mounting structure of the eighth aspect, since the holding member is grounded, noise suppression by the bypass capacitor is more reliable. According to the mounting structure of the ninth aspect, the cooling medium that is originally a cooling means for the semiconductor element can be used as the grounding means, and noise can be more reliably suppressed.

 (3) According to the mounting structure of the semiconductor device according to the third aspect of the present invention, the noise emission generated in the power semiconductor element causes the mold part of the resin mold located between the electrode plate and the cooling medium to be a dielectric. Suppressed by a noise suppression bypass capacitor. As a result, a dedicated bypass capacitor is not required to suppress noise emission, and the labor and time for externally attaching the capacitor are not required, thereby reducing the cost.

  In addition, since the bypass capacitor is disposed in the vicinity of the semiconductor element and for each semiconductor element, the effect of suppressing the emission noise is reliable and effective. Further, since the case containing the cooling medium also serves as a positioning means for the semiconductor module, no holding member is required, and the number of parts can be reduced and the assembly process can be simplified.

  According to the mounting structure of the eleventh aspect, the effect of suppressing the noise emitted by the bypass capacitor is further ensured.

The mounting structure of the semiconductor device according to the present invention can be classified into the following three types depending on how the bypass capacitor for noise suppression is formed, in particular, what is a dielectric (insulator).
a. In the first type, an insulating plate or film interposed between a semiconductor module and a holding member that holds or sandwiches the semiconductor module from both front and back sides serves as a dielectric, and includes various modes.

  In the first aspect, a part of the electrode plate of the semiconductor module is exposed from the resin mold of the semiconductor module so as to form one electrode plate. The holding member is made of a conductive material to form the other electrode plate.

  It is desirable that a bypass capacitor is connected to both the first electrode plate on the front surface side and the second electrode plate on the back surface side of the semiconductor module. However, such a configuration is not indispensable, and a bypass capacitor may be connected only to the first or second electrode plate. For this purpose, an insulating plate or the like may be interposed only between one electrode plate and the holding member facing the electrode plate. The same applies to the second to fourth aspects of the first type and the second and third types described below.

  In the second aspect, a part of the resin mold (mold part) covering the electrode plate of the semiconductor module is a dielectric. In the third aspect, a part of the exposed electrode plate of the semiconductor module of the semiconductor module is covered with an insulating film integrated with the resin module to form a dielectric. In the fourth aspect, an insulating film that is integrated with the holding member and faces a part of the exposed electrode plate of the semiconductor module is a dielectric.

In any aspect, it is desirable that the cooling medium circulates inside the holding member. The cooling medium not only suppresses the temperature rise in the semiconductor module, but if it is conductive, it is effective for grounding the holding member to the vehicle body.
b. In the second type, the holding member for holding or sandwiching the semiconductor module from both the front and back sides is a dielectric and the other electrode plate. For this purpose, the holding member is made of an insulating material, and a conductive internal member is inserted therein. A part of the electrode plate of the semiconductor module is exposed. Further, the cooling medium can be circulated inside the holding member.
c. The third type does not include a holding member that holds the semiconductor module from both the front and back sides. One electrode plate and a dielectric are formed in the semiconductor module, and the other electrode plate is a conductive cooling medium housed in a metal case. The electrode plate of the semiconductor module is covered with a part of the resin mold (mold part). The plurality of semiconductor modules are positioned in a predetermined state by the case.

  Embodiments of the present invention will be described below with reference to the accompanying drawings.

<First embodiment>
(Constitution)
The hybrid vehicle drive system shown in FIG. 1 includes a battery 10, a generator motor (MG) 20, and an inverter device 60. Between the DC bus bars 11 and 12 extending from the positive electrode terminal and the negative electrode terminal of the battery 10, the smoothing capacitor 13 and the semiconductor pair for three-phase AC (U phase, V phase, and W phase) constituting the inverter device 60 are arranged. Has been. A U-phase line 16 extends to the MG 20 from between the first U-phase and second U-phase semiconductor elements 31 and 32. A V-phase line 17 extends between the first V-phase and second V-phase semiconductor elements 31 and 32, and a W-phase line 18 extends between the first W and second W-phase semiconductor elements 31 and 32 to the MG 20.

  As shown in FIG. 2 to FIG. 4, the inverter device 60 is formed by alternately stacking holding tubes 55 and a plurality of semiconductor modules 30 in the height direction via insulating materials 50. As shown in FIG. 5 to FIG. 7, each semiconductor module 30 is joined to the first semiconductor element (IGBT) 31 and the second semiconductor element (flywheel diode) 32 via the solders 33 a and 33 b on the surface side thereof. The first electrode plate 35 and the second electrode plate 36 joined to these substrate sides (back side) via solder (not shown).

  A first drive electrode terminal 38 and a second drive electrode terminal 39 are integrated with the first electrode plate 35 and the second electrode plate 36, respectively. A control electrode terminal 41 is joined to the first semiconductor element 31 by a signal line such as a bonding wire 42. The control electrode terminal 41 is formed on the surface of the first semiconductor element 31 with a gate terminal (G) and an emitter terminal (Ke) for turning on and off the first semiconductor element 31, and an output terminal (K of the temperature diode for detecting the temperature thereof. , A), and a current detection terminal (Se) for detecting a current flowing through the first semiconductor element 31.

  The first semiconductor element 31 and the second semiconductor element 32, the first electrode plate 35 and the second electrode plate 36, the first drive electrode terminal 38 and the second drive electrode terminal 39, the control terminal 41 and the like are sealed with the mold resin 45. Has been. The mold resin 45 is filled between the first electrode plate 35 and the second electrode plate 36 to secure insulation between the two electrode plates 35, 36, and to fix the connection terminal 41, so that the first electrode plate 35, the second electrode plate 35, Insulation between the electrode plate 36 and the connection terminal 41 is ensured. The back surfaces of the first electrode plate 35 and the second electrode plate 36 are exposed. The semiconductor module 30 has a flat rectangular shape.

  Returning to FIG. 2, the insulating material 50 is made of, for example, a plate or film of aluminum nitride or silicon nitride, and has a rectangular shape slightly larger than the semiconductor module 30. The holding tube (clamping tube) 55 is formed by an aluminum extrusion molding method or the like, and includes a gap 56a that is partitioned by fins 56b and extends in the longitudinal direction. It has a width that is slightly larger than the width of the electrode plates 35 and 36 of the semiconductor module 30 and a length on which a plurality of semiconductor modules 30 can be placed. The gap 56b penetrates in the length direction, and a conductive cooling medium circulates through the inside.

  Here, consider a combination of a plurality of semiconductor modules 30 arranged side by side, an upper (first) holding tube 55A on the front side, and a lower (second) holding tube 55B on the back side. The upper holding tube 55A is in close contact with the first electrode plate 35 through the first insulating plate 50A, and the lower holding tube 55B is in close contact with the second electrode plate 36 through the second insulating plate 50B.

  The first drive electrode terminal 38 and the second drive electrode terminal 39 protrude to one side of the upper holding tube 55A and the lower holding tube 55B, and are connected to the positive DC bus bar 11, the negative DC bus bar 12, and the MG 20, respectively. AC bus bars 16 to 18 are connected. The control electrode terminal 41 protrudes from the other side and is connected to the control circuit 48. Holding pipes 50A and 50B are connected to a part of the body of the hybrid vehicle.

  As a result, the first insulating plate 50A, which is a non-conductive material, exists between the first electrode plate 35, which is a conductive material, and the first holding tube 55A, and the first bypass capacitor 57A is formed by these three members. . Similarly, a second bypass capacitor 57B is formed by the second electrode plate 36, the second holding tube 55B, and the second insulating plate 50B existing therebetween.

  A bellows member 61 is interposed between both ends of the adjacent upper holding tube 55A and lower holding tube 55B. Both ends thereof are brazed to the upper holding tube 55A and the lower holding tube 55B in a state where airtightness is ensured, and are bonded by bonding or the like. The cooling medium supplied from the pipe 62 to the upper bellows member 61 flows through the gap 56 of the holding pipe 55. Thus, a circulation path for the cooling medium is formed by the pipe 62, the piping pump, the radiator, and the like (not shown).

  A stack of the plurality of holding tubes 55 and the plurality of semiconductor modules 30 is accommodated in a metal case (not shown), and the metal case is fixed and electrically connected to the body of the electric vehicle. Eventually, the holding tube 55 is grounded to the vehicle body.

(Function and effect)
For example, when starting after an idle stop, the direct current of the battery 10 is converted into an alternating current by the inverter device 60 and the MG 20 is driven. On the other hand, during traveling by the engine, the alternating current generated by driving the MG 20 is converted into direct current, and the battery 10 is charged. Since this operation itself is well known, a detailed description is omitted.

  According to the first embodiment, the following effects regarding noise suppression can be obtained. First, the emission of noise generated in the first semiconductor element 31 and the second semiconductor element 32 to the bus bars 11, 12, 16 and the like is suppressed without mounting a special or dedicated bypass capacitor. This is because the electrode plates 35 and 36 are one electrode plates, the holding tubes 55A and 55B are the other electrode plates, and the insulating plates 50A and 50B are dielectrics, thereby forming the bypass capacitors 57A and 57B.

  The insulating plates 50A and 50B are originally interposed for electrical insulation between the semiconductor elements 31 and 32 and the holding tubes 55A and 55B, but also function as dielectrics due to their properties (insulating properties) and arrangement positions. As a result, not only the labor and time required to connect the dedicated bypass capacitor with the lead wires is unnecessary, but also space is advantageous.

  Second, emission noise is surely suppressed. Capacitors 57A and 57B are individually connected to the first and second semiconductor elements 31 and 32, respectively, and the bypass capacitors 57A and 57B are located in the immediate vicinity of the first and second semiconductor elements 31 and 32 which are noise sources. It depends on.

  Thirdly, the effect of suppressing emission noise is high for two reasons. First, the first holding pipe 55A and the second holding pipe 55B are connected to the vehicle body via conductive LLC, a pump, a radiator, and the like that flow through the inside. As a result, the impedance of the path for bypassing the noise of the semiconductor elements 31 and 32 to the body is reduced. Moreover, the fins 56b formed inside the inner peripheral surface of the gap 56a improve the electrical coupling between the holding tube 56 and the LLC.

  Further, an excellent cooling effect can be obtained regarding the cooling of the first and second semiconductor elements 32 and 32. The first holding tube 55A and the second holding tube 55B through which the cooling medium flows are respectively passed through the first electrode plate 35 disposed on the front surface side and the second electrode plate 36 disposed on the back surface side thereof. This is because a double-sided cooling system is employed.

<Second embodiment>
8 to 11 show a second embodiment. In the second embodiment, a part of the resin mold 110 of the semiconductor module constitutes a dielectric instead of the first and second insulating plates 50A and 50B of the first embodiment.

  More specifically, the front surface of the first electrode plate 35 and the back surface of the second electrode plate 36 are not exposed and are covered with the first mold portion 112 and the second mold portion 113, respectively. As a result, the first and second semiconductor elements 31 and 32, the first and second holding pipes 55A and 55B, and the first and second mold parts 112 and 113 positioned between the first and second holding pipes 55A and 55B. Bypass capacitors 115A and 115B are formed.

  According to the second embodiment, the same effect as in the first embodiment can be obtained. In addition, the configuration of the semiconductor device becomes compact. The first and second mold parts 112 and 113 function as an insulating material between the first and second semiconductor elements 31 and 32 and the first and second holding tubes 55A and 55B, and serve as a dielectric of the bypass capacitor. Because it also serves as a function. Further, the first and second insulating plates 50A and 50B in the first embodiment are not necessary.

<Third embodiment>
In the third embodiment shown in FIG. 12, first and second insulating coatings 153 and 154 are formed in close contact with the first and second mold portions 151 and 152 in place of the insulating plates 50A and 50B of the first embodiment. The exposed portions of the first and second electrode plates 35 and 36 are covered. The first and second insulating coatings 153 and 154 are made of, for example, an alumina sprayed coating or a DLC (Diamond Dike Carbon) coating. As a result, the bypass capacitors 155A and 155B are formed by the first and second semiconductor elements 31 and 32, the first and second holding tubes 55A and 55B, and the first and second insulating coatings 153 and 154 located therebetween. Composed.

  In the third embodiment, the same effect as in the first embodiment can be obtained. In addition, since the first and second insulating coatings 153 and 154 are located in the immediate vicinity of the first and second semiconductor elements 31 and 32, the capacities of the bypass capacitors 155A and 155B can be increased.

  In addition, the capacitance can be changed by adjusting the film thicknesses of the first and second insulating coatings 153 and 154. As is well known, the capacitance of the capacitor is inversely proportional to the thickness of the insulating coatings 153 and 154. Therefore, the thickness of the insulating coatings 153 and 154 may be reduced when it is desired to increase the capacity, and may be increased when it is desired to decrease the capacity. Since the capacitance is proportional to the surface area of the electrode plates 35 and 36, the surface area of the electrode plates 35 and 36 can be adjusted in parallel with or separately from the adjustment of the film thickness of the insulating coatings 153 and 154.

  The first and second electrode plates 35 and 36 of the semiconductor module 30 may be exposed, and the first and second insulating coatings 153 and 154 may be formed on the first and second holding tubes 55A and 55B.

<Fourth embodiment>
In the fourth embodiment shown in FIGS. 13 to 15, a holding tube 210 made of an insulating material such as resin or ceramics is used instead of the metal holding tube 55. A conductive inner tube 215 is inserted into the hollow portion of the insulating holding tube 210, and a cooling medium flows through the gap 216. Note that the first and second electrode plates 35 and 36 of the semiconductor module 30 are exposed. Therefore, the first and second electrode plates 31 and 32, the first and second inner pipes 215A and 215B, and the wall portions 212A and 212B of the holding pipes 210A and 210B positioned between them, bypass capacitors 220A and 220B. Is configured.

  According to the fourth embodiment, in addition to the same effects as in the first embodiment, the insulating wall 212 of the holding tube 210 for originally circulating the cooling medium serves as a dielectric, so that the semiconductor module 30 has a dielectric. It is not necessary to form a body. In addition, since the holding tube 210 is not required to have conductivity, the range of selection of materials is widened.

<Fifth embodiment>
A fifth embodiment is shown in FIGS. In the fifth embodiment, the first and second drive electrode terminals 38 and 39 of the semiconductor module 30 and the control terminal 41 protrude from the same side surface. The front surface of the first electrode plate 35 and the back surface (both not shown) of the second electrode plate 36 are covered with first and second mold portions 251 and 252.

  The metal case 260 has a plurality of openings 262 on the upper end side, and the inside thereof is filled with a conductive cooling medium 265. The lower end of each semiconductor module 30 is immersed in the cooling medium 265 of the case 260, the upper end protrudes upward from the opening 262, and is sealed with a seal member 263. First and second bypass capacitors 270A and 270B are formed by the first and second semiconductor elements 32 and 32, the cooling medium 265, and the mold portions 251 and 252 positioned therebetween.

  According to the fifth embodiment, the bypass capacitors 270A and 270B are formed in the vicinity of each of the first and second semiconductor elements 31 and 32 to effectively suppress noise. In addition, a metal case 260 containing the cooling medium 265 positions the plurality of semiconductor modules 30 in a predetermined state. Each semiconductor module 30 can be set in a predetermined state simply by being inserted from the opening 262 of the case 260, and the time for manufacturing the inverter device can be shortened.

1 is a system explanatory diagram of an electric vehicle to which the present invention is applied. It is front sectional drawing which shows 1st Example of this invention. FIG. 3 is a 3-3 cross-sectional view of FIG. 1. FIG. 4 is a sectional view taken along the line 4-4 in FIG. 1. It is a perspective view of the semiconductor module of 1st Example. It is an exploded perspective view similarly. (A) is 7-7 sectional drawing of FIG. 5, (b) is the principal part enlarged view. It is front sectional drawing which shows 2nd Example of this invention. It is 9-9 sectional drawing of FIG. It is 10-10 sectional drawing of FIG. FIG. 8 is a cross-sectional view corresponding to FIG. It is sectional drawing equivalent to Fig.7 (a) which shows 3rd Example of this invention. It is front sectional drawing which shows 3rd Example of this invention. It is 14-14 sectional drawing of FIG. (A) is 13-13 sectional drawing of FIG. 13, (b) is a principal part enlarged view of Fig.15 (a). It is a front view (partial cross section) which shows 4th Example of this invention. It is also a plan view. It is a front view which shows the semiconductor module of 4th Example. It is circuit explanatory drawing of a 1st prior art example. It is circuit explanatory drawing of a 2nd prior art example.

Explanation of symbols

10: battery 20: generator motor 11, 12, 16 to 18: busbar 30: semiconductor module 31, 32: semiconductor element 35: first electrode plate 36: second electrode plate 45: resin mold 50, 50A, 50B: insulation Plate 55, 55A, 55B: holding tube 57, 57A, 57B: bypass capacitor 60: inverter device

Claims (11)

A power semiconductor element, a connection terminal of a first electrode plate and a second electrode plate respectively bonded to one surface and the other surface of the semiconductor element, and a control circuit for controlling the semiconductor element; the semiconductor element; An insulating resin mold for sealing the first electrode plate and the second electrode plate; and a semiconductor module,
A conductive first holding member and a second holding member for holding the semiconductor module from both sides via a first insulating member and a second insulating member to be a derivative;
A noise suppression bypass capacitor is formed by the first electrode plate and / or the second electrode plate, the first holding member and / or the second holding member, and the first insulating member and / or the second insulating member. A mounting structure of a semiconductor device, wherein   A part of the first electrode plate and the second electrode plate is exposed, and the first insulating member and the second insulating member are exposed portions of the first electrode plate and the second electrode plate, the first holding member and the second electrode. The semiconductor device mounting structure according to claim 1, wherein the mounting structure is an insulating plate interposed between the holding member and the holding member.   A part of the first electrode plate and the second electrode plate is exposed, and the first insulating member and the second insulating member are integrated with the resin mold to cover the exposed portions of the first electrode plate and the second electrode plate. 2. The semiconductor device mounting structure according to claim 1, wherein the semiconductor device mounting structure is an insulating film.   A part of the first electrode plate and the second electrode plate is exposed, and the first insulating member and the second insulating member are integrated with the first holding member and the second holding member so as to face the exposed portion. 2. The semiconductor device mounting structure according to claim 1, wherein the semiconductor device mounting structure is an insulating film.   The semiconductor device mounting structure according to claim 2, wherein the first holding member and the second holding member are grounded.   5. The semiconductor device mounting structure according to claim 2, wherein the first holding member and the second holding member have a conductive cooling medium flowing therein and are grounded. A power semiconductor element; a connection terminal of a first electrode plate and a second electrode plate respectively bonded to one surface and the other surface of the semiconductor element; a control circuit for controlling the semiconductor element; the semiconductor element; An insulating resin mold that seals the first electrode plate and the second electrode plate; and a semiconductor module,
A conductive first internal member and a second internal member are inserted to hold the semiconductor module from both sides, and include an insulating first holding member and a second holding member which are derivatives. The first electrode plate And / or the second electrode plate, the first internal member and / or the second internal member, and the wall portion of the first holding member and / or the second holding member form a noise suppressing bypass capacitor. An apparatus for mounting a semiconductor device, comprising:   The semiconductor device mounting structure according to claim 7, wherein the first internal member and the second internal member are grounded.   8. The semiconductor device mounting structure according to claim 7, wherein a conductive cooling medium is circulated through the first internal member and the second internal member, and the cooling medium is grounded. A power semiconductor element; a connection terminal of a first electrode plate and a second electrode plate respectively bonded to one surface and the other surface of the semiconductor element; a control circuit for controlling the semiconductor element; the semiconductor element; An insulating resin mold that seals the first electrode plate and the second electrode plate; and a semiconductor module,
A conductive case containing a conductive cooling medium, and a plurality of the semiconductor modules disposed in proximity in the cooling medium; and a metal case,
A noise-suppressing bypass capacitor is formed by the first electrode plate and / or the second electrode plate, the cooling medium, and the first mold portion and / or the second mold portion of the resin mold. A mounting structure of a semiconductor device.   The semiconductor device mounting structure according to claim 10, wherein the cooling medium is grounded.

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