JP2005072363A - Ecr apparatus - Google Patents

Ecr apparatus Download PDF

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JP2005072363A
JP2005072363A JP2003301662A JP2003301662A JP2005072363A JP 2005072363 A JP2005072363 A JP 2005072363A JP 2003301662 A JP2003301662 A JP 2003301662A JP 2003301662 A JP2003301662 A JP 2003301662A JP 2005072363 A JP2005072363 A JP 2005072363A
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chamber
microwave
mode
ecr
electric field
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JP4457202B2 (en
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Yasushi Kato
裕史 加藤
Toyohisa Asaji
豊久 浅地
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Toyama Prefecture
Tateyama Machine Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an electronic cyclotron resonance (ECR) apparatus, capable of producing plasma or multivalent ion of high energy efficiently. <P>SOLUTION: Electromagnets 20, 21 arranged at the side of a metallic cylindrical chamber 12, and an antenna 26 for guiding microwave into the chamber 12, are provided. Shielding members 22, 23 for shielding the microwave are provided at both sides in the central axial direction of the chamber 12 serving as a resonator with an interval of n/2 times (n is a natural number) of wavelength of the microwave in the tube of TE01 mode. The antenna 26 is installed at a position whereat the value of strength of an electric field in the TE01 mode by the microwave in the central axial direction of the chamber 12 becomes substantially maximum. The electromagnets 20, 21 are set so that the strength of an external magnetic field in the chamber 12 substantially coincides with the condition of ECR, at a position where the direction of lines of magnetic force of the external magnetic field by the electromagnets 20, 21 in the chamber 12 is intersected substantially orthogonally with the direction of electric field of the TE01 mode due to the microwave in the chamber 12, and the value of strength of electric field under the TE01 mode in the chamber 12 is substantially maximized. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

この発明は、各種半導体集積回路等の半導体微細素子の製造工程中で用いられるイオン注入や、種々のプラズマ処理等を行う際に、プラズマを作る装置として用いられるＥＣＲ装置に関する。   The present invention relates to an ECR apparatus used as an apparatus for generating plasma when performing ion implantation and various plasma treatments used in the manufacturing process of semiconductor microelements such as various semiconductor integrated circuits.

従来、例えば特許文献１にあるように、イオン源として、または反応性ガスをプラズマ化してドライエッチングやＣＶＤを行うためのプラズマ発生装置がある。このプラズマ発生装置のプラズマ発生方法は、電磁石を用いて磁場を形成し、この磁場中にマイクロ波を放射し、電子サイクロトロン共鳴（以下、ＥＣＲという）を利用してプラズマを発生させるものである。ここで用いられるマイクロ波は、一般に２．４５ＧＨｚの工業用周波数であり、この周波数のマイクロ波を用いた場合のＥＣＲ条件を満たす磁場の強さは、８７５Gaussである。   Conventionally, as disclosed in Patent Document 1, for example, there is a plasma generation apparatus for performing dry etching or CVD as an ion source or by converting a reactive gas into plasma. The plasma generation method of this plasma generator is to form a magnetic field using an electromagnet, radiate a microwave in the magnetic field, and use electron cyclotron resonance (hereinafter referred to as ECR). The microwave used here is generally an industrial frequency of 2.45 GHz, and the strength of the magnetic field that satisfies the ECR condition when using the microwave of this frequency is 875 Gauss.

さらに特許文献１、２では、導波管内で発生するマイクロ波のモードがＴＥ１１モードを基本として、チャンバ内にプラズマを発生させ、ＥＣＲ条件を満たすようにしている。   Further, in Patent Documents 1 and 2, the microwave mode generated in the waveguide is based on the TE11 mode, and plasma is generated in the chamber so as to satisfy the ECR condition.

特開平１−１９７９９９号公報JP-A-1-197999 特開平４−３５５９１５号公報JP-A-4-355915

上記従来の技術の装置において、より高エネルギーのイオンビームやプラズマを得ようとすると、より高電圧の加速用電極が必要であったり、より高出力の電磁石を必要とするなど、エネルギー効率が良くないものであった。高エネルギーのイオンビームを得るには、高電圧で加速するか、多価のイオンを含むイオンビームを引き出せばよいが、高電圧を印可するものはエネルギー効率が悪く、多価のイオンを効率的に生成することが求められている。   In the above prior art apparatus, when trying to obtain a higher energy ion beam or plasma, a higher voltage acceleration electrode is required, a higher output electromagnet is required, and the energy efficiency is improved. It was not. To obtain a high-energy ion beam, it is only necessary to accelerate with a high voltage or to extract an ion beam containing polyvalent ions. To be generated.

また、通常真空チャンバ内で所望のモードを立てる場合、モード変換器によって外部で特定モードを作り、石英窓等を通してそのモードのマイクロ波を導入するということが行われていた。しかしながら、所定の電磁界モードを別の場所で立てて導入することにより、変換時及び導入時の損失があった。   Further, when a desired mode is set in a normal vacuum chamber, a specific mode is created outside by a mode converter, and a microwave of that mode is introduced through a quartz window or the like. However, there is a loss during conversion and introduction by introducing a predetermined electromagnetic field mode standing up in another place.

この発明は、上記従来の技術に鑑みなされたもので、効率的に高エネルギーのプラズマや多価イオンを生成させることができるＥＣＲ装置を提供することを目的とする。   The present invention has been made in view of the above-described conventional technique, and an object thereof is to provide an ECR apparatus that can efficiently generate high-energy plasma and multivalent ions.

この発明は、金属円筒状のチャンバと、このチャンバの側方に配置され上記チャンバ内に磁場を形成する磁石と、上記チャンバ内にマイクロ波を導くアンテナとを備え、上記チャンバを共振器としてそのチャンバ内に電子サイクロトロン共鳴によるプラズマを発生させるＥＣＲ装置であって上記チャンバ内で上記チャンバの中心軸方向両側に上記マイクロ波のＴＥ０１モードの管内波長のｎ／２（ｎは自然数）倍の間隔を隔てて、上記マイクロ波を遮蔽する遮蔽部材を設け、上記チャンバ内のマイクロ波の電磁界モードのうち、上記チャンバ中心軸方向のＴＥ０１モードの電界強度の定在波の分布の中で、電界強度がほぼ最大となる位置に上記アンテナを設置し、上記チャンバ内での上記磁石による外部磁界の磁力線の向きと上記チャンバ内の上記マイクロ波によるＴＥ０１モードの電界の向きがほぼ直交する位置であって、上記チャンバ内のＴＥ０１モードでの電界強度の値がほぼ最大となる位置で、上記磁石による上記チャンバ内での外部磁界の強さがＥＣＲ条件にほぼ合致するように上記磁石を設定したＥＣＲ装置である。   The present invention comprises a metal cylindrical chamber, a magnet disposed on the side of the chamber and forming a magnetic field in the chamber, and an antenna for guiding microwaves into the chamber, wherein the chamber serves as a resonator. An ECR apparatus for generating plasma by electron cyclotron resonance in a chamber, wherein an interval of n / 2 (n is a natural number) times the in-tube wavelength of the TE01 mode of the microwave is provided on both sides in the central axis direction of the chamber in the chamber. A shielding member for shielding the microwave is provided, and among the microwave electromagnetic field modes in the chamber, the electric field strength is within the standing wave distribution of the electric field strength of the TE01 mode in the chamber central axis direction. The antenna is installed at a position where the maximum is approximately the maximum, the direction of the magnetic field lines of the external magnetic field by the magnet in the chamber and the inside of the chamber The direction of the electric field in the TE01 mode by the microwave is substantially orthogonal, and the position of the electric field strength in the TE01 mode in the chamber is substantially maximum. This is an ECR device in which the magnet is set so that the strength substantially matches the ECR condition.

上記アンテナの位置は、上記遮蔽部材の一方から他方の遮蔽部材側に向かって、上記マイクロ波の管内波長の１／４の長さの箇所が好ましい。また、上記遮蔽部材は、円板状に形成され上記チャンバ内壁とはわずかの隙間を空けて位置している。上記遮蔽部材のうちの一方の遮蔽部材は固定され、他方の遮蔽部材は上記チャンバの中心軸方向に位置調整可能に設けられている。上記遮蔽部材のうち、固定された遮蔽部材には、上記チャンバ内のイオンを引き出して加速させる引き出し電極を備えるものである。   The position of the antenna is preferably a portion having a length of 1/4 of the in-tube wavelength of the microwave from one of the shielding members to the other shielding member side. The shielding member is formed in a disc shape and is located with a slight gap from the chamber inner wall. One of the shielding members is fixed, and the other shielding member is provided so that its position can be adjusted in the central axis direction of the chamber. Among the shielding members, the fixed shielding member includes an extraction electrode that extracts and accelerates ions in the chamber.

上記磁石は、上記チャンバの外周で所定間隔を隔てて嵌合した一対の電磁石から成り、さらにその一対の電磁石間には、同様に環状の電磁石が設けられ、上記チャンバ外側面には所定間隔で永久磁石を設けたものである。   The magnet is composed of a pair of electromagnets fitted at a predetermined interval on the outer periphery of the chamber, and an annular electromagnet is similarly provided between the pair of electromagnets. A permanent magnet is provided.

または、上記磁石は、上記チャンバの一方の側方に設けられた永久磁石であり、この永久磁石に上記遮蔽部材の一方が設けられたものである。   Alternatively, the magnet is a permanent magnet provided on one side of the chamber, and one of the shielding members is provided on the permanent magnet.

この発明によれば、真空チャンバ自体を共振器としてＴＥ０１モードの電磁界モードを単独でチャンバ内に立てることができ、マイクロ波によるＴＥ０１モードの電界の強さがほぼ最大となる位置で、外部磁界によるＥＣＲゾーンの磁力線の方向と、マイクロ波によるＴＥ０１モードの電界の向きが直交することにより、高効率に高エネルギーの荷電粒子を発生させることができる。   According to the present invention, the TE01 mode electromagnetic field mode can be independently set up in the chamber by using the vacuum chamber itself as a resonator, and the external magnetic field is at a position where the TE01 mode electric field strength by the microwave is substantially maximized. The direction of the magnetic lines of force in the ECR zone due to and the direction of the electric field of the TE01 mode by the microwave are orthogonal to each other, so that high-energy charged particles can be generated with high efficiency.

また、この発明はチャンバ内にアンテナを導入して直接ＴＥ０１モードをチャンバ内で励振させ、マイクロ波とプラズマを直接カップリングするようにしているので、損失が極めて少なく、この点からも効率的である。   In addition, the present invention introduces an antenna in the chamber and directly excites the TE01 mode in the chamber so that the microwave and the plasma are directly coupled. Therefore, the loss is extremely small and efficient from this point. is there.

これにより、高密度なプラズマや多価イオンを効率よく発生させることができ、装置の小型化や省エネルギー化にも寄与するものである。そして、各種半導体集積回路等の半導体微細素子の製造工程中で用いられるイオン注入や、種々のプラズマ処理等を行う場合において、高効率にプラズマや荷電粒子を発生させることができる。さらに、これにより得られるプラズマや多価イオンは、原子核物理分野における加速器のイオン源、生化学や医学分野におけるイオン源としても利用できるものである。   Thereby, high-density plasma and multivalent ions can be generated efficiently, which contributes to downsizing and energy saving of the apparatus. And when performing ion implantation used in the manufacturing process of semiconductor microelements, such as various semiconductor integrated circuits, and various plasma treatments, plasma and charged particles can be generated with high efficiency. Furthermore, the plasma and multivalent ions obtained thereby can be used as an ion source for accelerators in the field of nuclear physics and an ion source in the fields of biochemistry and medicine.

以下、この発明の実施の形態について図面を基にして説明する。この実施形態のＥＣＲ装置は、従来と同様に、例えば２．４５ＧＨｚのマイクロ波を利用したＥＣＲ（電子サイクロトロン共鳴）装置である。この実施形態のＥＣＲ装置１０は、図１〜図３に示すように、アルミニウム等の非磁性体の導体により形成された円筒状のチャンバ１２と、このチャンバ１２内にＥＣＲプラズマを発生させるための磁界を形成する一対の電磁石２０，２１を備える。一対の電磁石２０，２１は、各々チャンバ１２の側面の円周方向に環状に巻かれている。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. The ECR apparatus of this embodiment is an ECR (Electron Cyclotron Resonance) apparatus using a microwave of 2.45 GHz, for example, as in the prior art. As shown in FIGS. 1 to 3, the ECR apparatus 10 of this embodiment includes a cylindrical chamber 12 formed of a non-magnetic conductor such as aluminum, and an ECR plasma generated in the chamber 12. A pair of electromagnets 20 and 21 for forming a magnetic field are provided. The pair of electromagnets 20 and 21 are each annularly wound in the circumferential direction of the side surface of the chamber 12.

チャンバ１２は、細長い円筒状に形成され、後述するマイクロ波の空洞共振器としても機能する。チャンバ１２の内部は密閉され、図示しない真空ポンプに接続されて、真空に近い状態で所定の原子のプラズマやイオンを生成する。電磁石２０，２１は、チャンバ１２の両端部にほぼ位置して設けられている。チャンバ１２の一端部１２ａには、真空ポンプとの接続部等が設けられている。また他端部１２ｂには、生成したイオンを引き出して加速する引出部１６が設けられ、他端部１２ｂの内部には、イオンを加速させる引出電極１８が設けられている。   The chamber 12 is formed in an elongated cylindrical shape, and also functions as a microwave cavity resonator described later. The interior of the chamber 12 is hermetically sealed and connected to a vacuum pump (not shown) to generate plasma and ions of predetermined atoms in a state close to vacuum. The electromagnets 20 and 21 are provided substantially at both ends of the chamber 12. One end portion 12a of the chamber 12 is provided with a connection portion with a vacuum pump and the like. The other end portion 12b is provided with an extraction portion 16 for extracting and accelerating the generated ions, and the other end portion 12b is provided with an extraction electrode 18 for accelerating the ions.

一対の電磁石２０，２１に対応するチャンバ１２内の所定箇所には、チャンバ１２内での上記マイクロ波の管内波長のｎ／２（ｎは自然数）倍の間隔を隔てて、マイクロ波の遮蔽部材である遮蔽板２２，２３が設けられている。遮蔽板２２，２３は金属製の円板で、円筒状のチャンバ１２の内壁とはわずかの隙間を空けて位置している。遮蔽板２２は、引出電極１８のチャンバ内側先端部に取り付けられ、引出電極１８の先端部開口に対応した開口を有し固定されている。遮蔽板２３は、チャンバ１２内で位置調整可能に設けられている。   A microwave shielding member is provided at a predetermined position in the chamber 12 corresponding to the pair of electromagnets 20 and 21 with an interval of n / 2 (n is a natural number) times the in-tube wavelength of the microwave in the chamber 12. The shielding plates 22 and 23 are provided. The shielding plates 22 and 23 are metal discs and are located with a slight gap from the inner wall of the cylindrical chamber 12. The shielding plate 22 is attached to the leading end of the extraction electrode 18 inside the chamber, and has an opening corresponding to the opening of the leading end of the extraction electrode 18. The shielding plate 23 is provided in the chamber 12 so that the position can be adjusted.

チャンバ１２の引出電極１８に近い位置の側面には、マイクロ波をチャンバ１２内に放射するアンテナ２６が取り付けられている。アンテナ２６の位置は、遮蔽板２２からマイクロ波の管内波長の１／４の長さ離れた位置に固定されている。このアンテナ２６の位置は、チャンバ１２内のマイクロ波の電磁界モードのうち、ＴＥ０１モードでの電界強度の値がほぼ最大となる位置である。アンテナ２６の先端部２６ａは、図３（ａ）に示すようにチャンバ１２の半径に延出し円周方向に湾曲して折れている。   An antenna 26 that radiates microwaves into the chamber 12 is attached to the side surface of the chamber 12 near the extraction electrode 18. The position of the antenna 26 is fixed at a position away from the shielding plate 22 by a quarter of the in-tube wavelength of the microwave. The position of the antenna 26 is a position where the value of the electric field strength in the TE01 mode among the microwave electromagnetic field modes in the chamber 12 is almost the maximum. The distal end portion 26a of the antenna 26 extends to the radius of the chamber 12 and is bent in the circumferential direction as shown in FIG.

また、一対の電磁石２０，２１間には、環状の補助電磁石２８が設けられている。さらに、チャンバ１２の外側面には、図１の仮想線で示すように、所定間隔で永久磁石３０が設けられている。   An annular auxiliary electromagnet 28 is provided between the pair of electromagnets 20 and 21. Further, permanent magnets 30 are provided on the outer surface of the chamber 12 at predetermined intervals, as indicated by phantom lines in FIG.

この実施形態によるＥＣＲ装置１０は、一対の電磁石２０，２１により形成されるチャンバ１２内のチャンバ中心軸方向（以下、ｚ軸方向という）の磁束密度が、図４の（１）の波形に示すような強さとなっている。また、補助電磁石２８にも電流を流した場合のチャンバ１２内の磁束密度は、図４（２）に示すグラフの形となる。チャンバ１２内の磁束密度が最低となる位置は、チャンバ１２内での外部磁界の強さがＥＣＲ条件にほぼ合致する位置である。そして、チャンバ１２内での各磁石２０，２１，２８等による外部磁界の磁力線の向きと、チャンバ１２内のマイクロ波によるＴＥ０１モードの電界の向きがほぼ直交する位置であって、チャンバ１２内のｚ軸方向のマイクロ波のＴＥ０１モードでの電界強度の値がほぼ最大となる位置である。   In the ECR apparatus 10 according to this embodiment, the magnetic flux density in the chamber central axis direction (hereinafter referred to as the z-axis direction) in the chamber 12 formed by the pair of electromagnets 20 and 21 is shown in the waveform of (1) in FIG. It is such a strength. Further, the magnetic flux density in the chamber 12 when a current is also passed through the auxiliary electromagnet 28 takes the form of a graph shown in FIG. The position where the magnetic flux density in the chamber 12 is the lowest is a position where the strength of the external magnetic field in the chamber 12 substantially matches the ECR condition. The direction of the magnetic field lines of the external magnetic field by the magnets 20, 21, 28, etc. in the chamber 12 and the direction of the electric field of the TE01 mode by the microwaves in the chamber 12 are substantially orthogonal, This is the position at which the value of the electric field strength in the TE01 mode of the microwave in the z-axis direction is almost the maximum.

この実施形態のＥＣＲ装置１０の動作は、先ず、チャンバ１２内を真空ポンプにより真空引きし、所定のガス供給装置よりＡｒガス等を注入する。そして、マイクロ波電力供給装置よりマイクロ波をアンテナ２６に供給すると、アンテナ２６からマイクロ波が放射される。放射された２．４５ＧＨｚのマイクロ波により、チャンバ１２内のマイクロ波の電磁界分布モードは、図５に示すＴＥ０１モードである。また、このときのチャンバ１２内の電界の強さは、図２（ｂ）に示すような分布波形を呈している。そして、電磁石２０、２１等による磁界のＥＣＲ条件である８７５Gaussの強さの位置が、図４の波形の谷間の部分であり、この位置は、チャンバ１２内のマイクロ波の電磁界モードのうちＴＥ０１モードでの電界強度の値がほぼ最大となる位置である。   In the operation of the ECR apparatus 10 of this embodiment, first, the inside of the chamber 12 is evacuated by a vacuum pump, and Ar gas or the like is injected from a predetermined gas supply apparatus. When a microwave is supplied from the microwave power supply device to the antenna 26, the microwave is radiated from the antenna 26. The electromagnetic field distribution mode of the microwave in the chamber 12 by the radiated 2.45 GHz microwave is the TE01 mode shown in FIG. Further, the intensity of the electric field in the chamber 12 at this time exhibits a distribution waveform as shown in FIG. Then, the position of the intensity of 875 Gauss, which is the ECR condition of the magnetic field by the electromagnets 20, 21, etc., is the valley portion of the waveform in FIG. 4, and this position is TE01 among the microwave electromagnetic field modes in the chamber 12. This is the position where the value of the electric field strength in the mode is almost the maximum.

チャンバ１２内で成り立ち得るマイクロ波の電磁界モードは、図５に示すようなＴＥモードやＴＭモードがある。この各モードにおいて、図６、図７に示すように、下記の式（１）により、チャンバ１２の内径によるマイクロ波の管内波長λｇが決定され、
１／λ２＝１／λｇ２＋１／λｃ２ （１）
である。ここで、λは自由空間波長、λｃは遮断波長である。
λｃは、λｃ＝２πａ／χ （２）
χは、ＴＥモードおよびＴＭの固有値である。また、チャンバ１２内でマイクロ波の定在波が安定に形成されるチャンバ１２の長さｌは、
ｌ＝ｓλｇ／２（ｓは自然数） （３）
である。図７は、チャンバ１２の半径ａと管内波長λｇとの関係を各モード毎に示すグラフである。図７からわかるように、チャンバ１２が一定の半径以下となると、マイクロ波の管内波長λｇが急激に長くなり、実質的に所望のモードを形成することができなくなる。この実施形態では、半径ａを８０ｍｍ程度とすることにより、そのチャンバ１２内で立ち得る電磁界モードは、ＴＥ０１モード、ＴＭ１１モード、ＴＥ１１モード、ＴＥ２１モード、ＴＭ０１モードである。 The microwave electromagnetic field modes that can be established in the chamber 12 include a TE mode and a TM mode as shown in FIG. In each mode, as shown in FIG. 6 and FIG. 7, the in-tube wavelength λg of the microwave by the inner diameter of the chamber 12 is determined by the following equation (1),
1 / λ 2 = 1 / λg 2 + 1 / λc 2 (1)
It is. Here, λ is a free space wavelength, and λc is a cutoff wavelength.
λc is λc = 2πa / χ (2)
χ is the eigenvalue of TE mode and TM. Further, the length l of the chamber 12 where the microwave standing wave is stably formed in the chamber 12 is:
l = sλg / 2 (s is a natural number) (3)
It is. FIG. 7 is a graph showing the relationship between the radius a of the chamber 12 and the guide wavelength λg for each mode. As can be seen from FIG. 7, when the chamber 12 is below a certain radius, the in-tube wavelength λg of the microwave is abruptly increased, and a desired mode cannot be formed substantially. In this embodiment, when the radius a is about 80 mm, the electromagnetic field modes that can stand in the chamber 12 are TE01 mode, TM11 mode, TE11 mode, TE21 mode, and TM01 mode.

そして、マイクロ波による電磁界モードがチャンバ１２内にＴＥ０１モードが単体で立つのは、遮蔽部材２２，２３の間隔がマイクロ波のＴＥ０１モードの管内波長のｎ／２（ｎは自然数）倍の間隔に設定されており、他のモードとの波長の違いによりＴＥ０１モードが優勢となるためと、遮蔽部材２２，２３がチャンバ１２の内壁から僅かに離れて位置しているため、ＴＭモードを打ち消すためである。   The TE01 mode stands alone in the chamber 12 in the microwave electromagnetic field mode because the interval between the shielding members 22 and 23 is n / 2 (n is a natural number) times the in-tube wavelength of the microwave TE01 mode. In order to cancel the TM mode, the TE01 mode is dominant due to the difference in wavelength from the other modes, and the shielding members 22 and 23 are located slightly away from the inner wall of the chamber 12. It is.

チャンバ１２内の電界の強さを測定した結果、チャンバ１２の円筒の中心軸方向（ｚ軸方向）に図８に示す結果が得られ、１点鎖線に示す理論値にほぼ沿った位置に、黒丸印の折れ線に示すように、電界の強さのピーク値が得られ、ＴＥ０１モードが単体で立っていることが確かめられた。また、遮蔽板２２，２３の間隔を、マイクロ波の管内波長のｎ／２（ｎは自然数）倍の間隔から外した場合は、図８の黒三角の折れ線で示すように、電界強度のピーク値が低いものとなった。なお、図８において、点線（１）は固定遮蔽板２２及び引出電極１８の位置、（２）はアンテナ２６の位置、（３）は可動式の遮蔽板２３の位置であって、固定遮蔽板２２との間隔をマイクロ波の管内波長のｎ／２（ｎは自然数）倍の位置、（４）は可動式の遮蔽板２３の位置を、固定遮蔽板２２に対してマイクロ波の管内波長のｎ／２（ｎは自然数）倍から外した間隔にした位置である。   As a result of measuring the strength of the electric field in the chamber 12, the result shown in FIG. 8 is obtained in the central axis direction (z-axis direction) of the cylinder of the chamber 12, and at a position substantially along the theoretical value indicated by the one-dot chain line, As shown by the black circles, a peak value of the electric field strength was obtained, and it was confirmed that the TE01 mode was standing alone. Further, when the interval between the shielding plates 22 and 23 is removed from the interval of n / 2 (n is a natural number) times the in-tube wavelength of the microwave, the peak of the electric field strength is shown as indicated by the black triangular broken line in FIG. The value was low. In FIG. 8, the dotted line (1) is the position of the fixed shielding plate 22 and the extraction electrode 18, (2) is the position of the antenna 26, and (3) is the position of the movable shielding plate 23. The position of the movable shield plate 23 with respect to the fixed shield plate 22 is the position of the microwave guide wavelength with respect to the fixed shield plate 22 at a position n / 2 (n is a natural number) times the microwave guide wavelength. It is a position that is spaced from n / 2 (n is a natural number) times.

また、チャンバ１２内の円周方向（ｚ軸と直交するｘ−ｙ軸方向）の電界の強さは、図３（ｂ）、（ｃ）に示すように、チャンバ１２内のマイクロ波の電磁界モードのうちＴＥ０１モードでの電界強度の値がほぼ最大となる位置で、各々チャンバ１２内で環状にピーク値の範囲が形成されていることが分かる。   The strength of the electric field in the circumferential direction in the chamber 12 (in the xy axis direction orthogonal to the z axis) is the electromagnetic wave of the microwave in the chamber 12 as shown in FIGS. It can be seen that a peak value range is formed in a ring shape in each chamber 12 at a position where the electric field intensity value in the TE01 mode is almost the maximum among the field modes.

この実施形態のＥＣＲ装置１０は、一対の遮蔽板２２，２３の間隔を、マイクロ波の管内波長のｎ／２（ｎは自然数）倍の間隔とし、チャンバ１２内での電磁石２０，２１等による外部磁界の磁力線の向きと、チャンバ１２内のマイクロ波によるＴＥ０１モードの電界の向きがほぼ直交する位置であって、チャンバ１２内のマイクロ波の電磁界モードのうちＴＥ０１モードでのｚ軸方向における電界強度の値がほぼ最大となる位置で、電磁石２０，２１等によるチャンバ１２内での外部磁界の強さがＥＣＲ条件にほぼ合致するように電磁石２０，２１等を設定したので、効率よくプラズマにマイクロ波の電力が投入される。これにより、効率的に高エネルギーのプラズマや多価イオンを形成することができる。また、チャンバ１２自体が共振器となるため、チャンバ１２内の電界強度が高く、これによっても生成するプラズマをより高エネルギーのものにすることができ、より低圧力での放電維持が可能となる。さらに、アンテナ２６のチャンバ１２内での突出位置が、一方の遮蔽板２２から、マイクロ波の管内波長の４分の１の長さを空けた位置としたので、マイクロ波をＴＥ０１モードで効率よくチャンバ１２内へ放射することができる。   In the ECR apparatus 10 of this embodiment, the interval between the pair of shielding plates 22 and 23 is set to an interval of n / 2 (n is a natural number) times the in-tube wavelength of the microwave, and the electromagnets 20 and 21 in the chamber 12 are used. The direction of the magnetic field lines of the external magnetic field and the direction of the electric field of the TE01 mode by the microwaves in the chamber 12 are substantially orthogonal to each other in the z-axis direction in the TE01 mode among the electromagnetic field modes of the microwaves in the chamber 12. Since the electromagnets 20, 21 and the like are set so that the strength of the external magnetic field in the chamber 12 by the electromagnets 20, 21 and the like substantially matches the ECR condition at the position where the value of the electric field strength is almost maximum, the plasma is efficiently generated. Microwave power is input to Thereby, high energy plasma and multivalent ions can be efficiently formed. In addition, since the chamber 12 itself becomes a resonator, the electric field strength in the chamber 12 is high, so that the generated plasma can be of higher energy, and discharge can be maintained at a lower pressure. . Furthermore, since the projecting position of the antenna 26 in the chamber 12 is set to a position that is one quarter of the microwave guide wavelength from the one shielding plate 22, the microwave can be efficiently transmitted in the TE01 mode. It can radiate into the chamber 12.

なお、この発明のＥＣＲ装置は、上記実施形態に限定されるものではなく、図９に示しようなＥＣＲを利用したエッチング等のプラズマ処理装置に利用することもできる。このプラズマ処理装置４０は、真空チャンバ１２の上方にリング状の永久磁石４１，４２を同心状に配置し、環状の外側永久磁石４１から内側の永久磁石４２に向かって磁束が走る構造としている。この場合、チャンバ１２内のマイクロ波遮蔽板４３から、マイクロ波の管内波長のほぼ１／４波長分離れた位置に、永久磁石４１，４２と同心の曲面形状のＥＣＲゾーンＲが形成される。そしてこの位置は、チャンバ１２内のマイクロ波の電磁界モードのうちＴＥ０１モードでの電界強度Ｅの値がほぼ最大となる位置であり、アンテナ２６が設置された位置である。また他方のマイクロ波遮蔽部材４４上には、プラズマによりエッチング等が成される基板４６が載置されている。   Note that the ECR apparatus of the present invention is not limited to the above embodiment, and can also be used in a plasma processing apparatus such as etching using ECR as shown in FIG. The plasma processing apparatus 40 has a structure in which ring-shaped permanent magnets 41 and 42 are concentrically arranged above the vacuum chamber 12 so that magnetic flux runs from the annular outer permanent magnet 41 toward the inner permanent magnet 42. In this case, an ECR zone R having a curved surface concentric with the permanent magnets 41 and 42 is formed at a position separated from the microwave shielding plate 43 in the chamber 12 by approximately ¼ wavelength of the in-tube wavelength of the microwave. This position is a position where the value of the electric field intensity E in the TE01 mode among the microwave electromagnetic field modes in the chamber 12 is substantially maximum, and is the position where the antenna 26 is installed. On the other microwave shielding member 44, a substrate 46 which is etched by plasma is placed.

図９に示すＥＣＲ装置においても、チャンバ１２内のマイクロ波の電磁界モードのうちＴＥ０１モードでのｚ軸方向における電界強度の値がほぼ最大となる位置で、チャンバ１２内での磁石４１，４２による磁界の磁力線の向きとチャンバ１２内のマイクロ波によるＴＥ０１モードの電界の向きがほぼ直交し、磁石４１，４２によるチャンバ１２内での磁界の強さがＥＣＲ条件にほぼ合致するように磁石４１，４２を設定することにより、効率よく高エネルギーのプラズマや多価イオンを形成することができる。   Also in the ECR apparatus shown in FIG. 9, the magnets 41 and 42 in the chamber 12 are at positions where the value of the electric field strength in the z-axis direction in the TE01 mode is substantially maximum among the electromagnetic field modes of the microwave in the chamber 12. The direction of the magnetic field lines of the magnetic field by the magnet 41 and the direction of the electric field of the TE01 mode by the microwaves in the chamber 12 are substantially orthogonal, and the magnet 41 and 42 so that the strength of the magnetic field in the chamber 12 substantially matches the ECR condition. , 42 can be used to efficiently form high-energy plasma and multivalent ions.

またこの発明の電磁石や永久磁石の数や位置も、適宜設定可能なものであり、マイクロ波の周波数、発生させるプラズマやイオンの種類も適宜選択できる。また、アンテナの形状も上記実施形態の他、直線状やＬ字状のロッドアンテナ、ダイポールアンテナ、ループアンテナ等適宜選択し得る。   The number and position of the electromagnets and permanent magnets of the present invention can also be set as appropriate, and the frequency of the microwave and the type of plasma or ions to be generated can be selected as appropriate. In addition to the above embodiment, the shape of the antenna can be appropriately selected from a linear or L-shaped rod antenna, a dipole antenna, a loop antenna, or the like.

この発明の一実施形態のＥＣＲ装置の側面図である。It is a side view of the ECR device of one embodiment of this invention. この発明の一実施形態のＥＣＲ装置のｚ軸方向の中心軸を含む方向の縦断面図（ａ）、チャンバ内のマイクロ波の電界強度を示す図（ｂ）である。It is the longitudinal cross-sectional view (a) of the direction containing the center axis | shaft of the z-axis direction of the ECR apparatus of one Embodiment of this invention, and the figure (b) which shows the electric field strength of the microwave in a chamber. この発明の一実施形態のＥＣＲ装置のチャンバのｚ軸方向と直交する面の断面図（ａ）と、この断面におけるマイクロ波のｘ軸方向およびｙ軸方向の電界の強さの測定値を示すグラフ（ｂ）、（ｃ）である。Sectional drawing (a) of the surface orthogonal to the z-axis direction of the chamber of the ECR apparatus of one Embodiment of this invention, and the measured value of the electric field strength of the x-axis direction of this microwave and the y-axis direction in this cross section are shown. Graphs (b) and (c). この発明の一実施形態のＥＣＲ装置のチャンバ内の磁束密度を示すグラフである。It is a graph which shows the magnetic flux density in the chamber of the ECR apparatus of one Embodiment of this invention. この発明の一実施形態のＥＣＲ装置のチャンバ内に形成される電磁界モードを示すグラフである。It is a graph which shows the electromagnetic field mode formed in the chamber of the ECR apparatus of one Embodiment of this invention. この発明の一実施形態のＥＣＲ装置の、チャンバ径と長さの関係を示す略図である。It is the schematic which shows the relationship between the chamber diameter and length of the ECR apparatus of one Embodiment of this invention. この発明の一実施形態のＥＣＲ装置の、チャンバ径と管内波長の関係を示すグラフである。It is a graph which shows the relationship between the chamber diameter of a ECR apparatus of one Embodiment of this invention, and an in-tube wavelength. この発明の一実施形態のＥＣＲ装置の、チャンバ内でのｚ軸方向の電界の強さの測定値を示すグラフである。It is a graph which shows the measured value of the electric field strength of the z-axis direction in the chamber of the ECR apparatus of one Embodiment of this invention. この発明の他の実施形態のＥＣＲ装置の断面図である。It is sectional drawing of the ECR apparatus of other embodiment of this invention.

符号の説明Explanation of symbols

１０ ＥＣＲ装置
１２ チャンバ
１６ 引出部
１８ 引出電極
２０，２１ 電磁石
２２，２３ 遮蔽部材
２６ アンテナ
２８ 補助電磁石 DESCRIPTION OF SYMBOLS 10 ECR apparatus 12 Chamber 16 Extraction part 18 Extraction electrode 20, 21 Electromagnet 22, 23 Shield member 26 Antenna 28 Auxiliary electromagnet

Claims (7)

金属円筒状のチャンバと、このチャンバの側方に配置され上記チャンバ内に磁場を形成する磁石と、上記チャンバ内にマイクロ波を導くアンテナとを備え、上記チャンバを共振器としてそのチャンバ内に電子サイクロトロン共鳴によるプラズマを発生させるＥＣＲ装置において、
上記チャンバ内で上記チャンバの中心軸方向両側に上記マイクロ波のＴＥ０１モードの管内波長のｎ／２（ｎは自然数）倍の間隔を隔てて、上記マイクロ波を遮蔽する遮蔽部材を設け、上記チャンバ内のマイクロ波の電磁界モードのうち、上記チャンバ中心軸方向のＴＥ０１モードの電界強度の定在波の分布の中で、電界強度がほぼ最大となる位置に上記アンテナを設置し、上記チャンバ内での上記磁石による外部磁界の磁力線の向きと上記チャンバ内の上記マイクロ波によるＴＥ０１モードの電界の向きがほぼ直交する位置であって、上記チャンバ内のＴＥ０１モードでの電界強度の値がほぼ最大となる位置で、上記磁石による上記チャンバ内での外部磁界の強さがＥＣＲ条件にほぼ合致するように上記磁石を設定したことを特徴とするＥＣＲ装置。 A metal cylindrical chamber, a magnet that is disposed on the side of the chamber, forms a magnetic field in the chamber, and an antenna that guides microwaves into the chamber. In an ECR apparatus that generates plasma by cyclotron resonance,
A shielding member for shielding the microwave is provided on both sides in the central axis direction of the chamber in the chamber at intervals of n / 2 (n is a natural number) times the guide wavelength of the microwave in the TE01 mode. Among the microwave electromagnetic field modes, the antenna is installed at a position where the electric field strength is substantially maximum in the distribution of the standing wave of the electric field strength of the TE01 mode in the chamber central axis direction. The direction of the magnetic field lines of the external magnetic field by the magnet and the direction of the electric field of the TE01 mode by the microwave in the chamber are almost perpendicular to each other, and the electric field strength value in the TE01 mode in the chamber is almost the maximum. Wherein the magnet is set so that the strength of the external magnetic field in the chamber by the magnet substantially matches the ECR condition. R equipment. 上記アンテナの位置は、上記遮蔽部材の一方から他方の遮蔽部材側に向かって、上記マイクロ波の管内波長の１／４の長さの箇所であることを特徴とする請求項１記載のＥＣＲ装置。   2. The ECR apparatus according to claim 1, wherein the position of the antenna is a portion having a length of ¼ of the in-tube wavelength of the microwave from one of the shielding members toward the other shielding member. . 上記遮蔽部材は、円板状に形成され上記チャンバ内壁とはわずかの隙間を空けて位置していることを特徴とする請求項１記載のＥＣＲ装置。   2. The ECR apparatus according to claim 1, wherein the shielding member is formed in a disk shape and is positioned with a slight gap from the inner wall of the chamber. 上記遮蔽部材のうち、一方の遮蔽部材は固定され、他方の遮蔽部材は上記チャンバの中心軸方向に位置調整可能に設けられていることを特徴とする請求項１，２または３記載のＥＣＲ装置。   4. The ECR apparatus according to claim 1, wherein one of the shielding members is fixed, and the other shielding member is provided so as to be positionally adjustable in a central axis direction of the chamber. . 上記遮蔽部材のうち、固定された遮蔽部材には、上記チャンバ内のイオンを引き出して加速させる引き出し電極を備えることを特徴とする請求項４記載のＥＣＲ装置。   5. The ECR apparatus according to claim 4, wherein a fixed shielding member among the shielding members is provided with an extraction electrode for extracting and accelerating ions in the chamber. 上記磁石は、上記チャンバの外周で所定間隔を隔てて嵌合した一対の電磁石から成り、さらにその一対の電磁石間には、同様に環状の電磁石が設けられ、上記チャンバ外側面には所定間隔で永久磁石を設けたことを特徴とする請求項１，２，３，４または５記載のＥＣＲ装置。   The magnet is composed of a pair of electromagnets fitted at a predetermined interval on the outer periphery of the chamber, and an annular electromagnet is similarly provided between the pair of electromagnets. 6. An ECR apparatus according to claim 1, wherein a permanent magnet is provided. 上記磁石は、上記チャンバの一方の側方に設けられた永久磁石であり、この永久磁石に上記遮蔽部材の一方が設けられたことを特徴とする請求項１，２または３記載のＥＣＲ装置。   4. The ECR apparatus according to claim 1, wherein the magnet is a permanent magnet provided on one side of the chamber, and one of the shielding members is provided on the permanent magnet.
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Publication number Priority date Publication date Assignee Title
JP2007012560A (en) * 2005-07-04 2007-01-18 Tateyama Machine Kk Plasma treatment device
JP4686668B2 (en) * 2005-07-04 2011-05-25 立山マシン株式会社 Plasma processing method and apparatus

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