JP2005072313A - Method and device for inspecting crystal film - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method and a device for inspecting a crystal film by which a crystal film having an optional degree of crystallization can be formed and the stable operation in a manufacturing process can be realized. <P>SOLUTION: The crystallization state of a crystal film for monitoring that is applied by a laser beam to be monitored in a second direction while an irradiation energy is changed, is inspected two-dimensionally at a plurality of inspection regions arranged in first and second directions, and on the basis of the inspection result, the inspection condition including at least an inspection region at the time of inspection of the crystal film to be inspected is set. Therefore, even if the inplane distribution of the crystallization state occurs discretely, the crystal film to be inspected can be measured and inspected in higher accuracy than conventional technology. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

The present invention relates to a crystal film inspection method and inspection apparatus, and more particularly, to a technique used through a crystallization process using an excimer laser annealing apparatus or the like when manufacturing a liquid crystal display panel.

  In the present invention, “substantially rectangular” includes “rectangular”.

In liquid crystal display elements and image sensors that have a strong demand for high resolution,
As a driving method, for example, an active matrix thin film transistor (TFT: Thin) in which a high-performance semiconductor element is formed on one surface of an insulating substrate such as glass.
Film Transistor) is used. A thin film silicon semiconductor is generally used for the TFT. Thin film silicon semiconductors are roughly classified into two types: amorphous silicon semiconductors made of amorphous silicon (amorphous silicon) and crystalline silicon semiconductors made of crystalline silicon.

Amorphous silicon semiconductors are most commonly used because they have characteristics such as a relatively low film formation temperature, can be manufactured relatively easily by a vapor deposition method, and are rich in mass productivity. . However, since amorphous silicon semiconductors are inferior in physical properties such as conductivity compared to crystalline silicon semiconductors, establishment of a manufacturing technique for TFTs made of crystalline silicon semiconductors is strongly required to obtain high-speed characteristics. That is, an amorphous silicon thin film is formed on one surface portion of the substrate by plasma CVD (Chemical Vapor Deposition) or low pressure thermal chemical vapor deposition,
A crystalline silicon semiconductor film (hereinafter sometimes simply referred to as a crystal film) is formed through a solid-phase growth crystallization process and a laser annealing crystallization process sequentially.

In the excimer laser annealing apparatus, in order to determine the optimum laser energy value, a substrate for determining the laser energy value is prepared. After that
The substrate is referred to as a power monitor substrate. Using the laser energy value within a predetermined range, the laser energy is irradiated to the power monitor substrate while changing the laser energy value stepwise. The result is measured by means such as visual observation or Raman spectroscopic measurement to confirm the crystallinity of the crystal film. Thereafter, the excimer laser annealing apparatus is operated using the laser energy value corresponding to the place where the desired crystallinity is obtained.

A technique for inspecting a substrate on which a crystal film crystallized by an excimer laser annealing apparatus is generated is also disclosed (Patent Document 1). In the prior art described in Patent Document 1, the surface of the substrate is irradiated with light having a predetermined direction, the intensity of diffusely reflected light from the surface is measured, and the crystallization state is measured. A technique for determining the state of a substrate based on a measured value is disclosed.
JP 2001-110861 A

The crystallization state of the crystal film crystallized by the excimer laser annealing device is
Even when the laser energy is irradiated under the same setting conditions, the crystallization state varies depending on the location of the substrate. That is, the crystallized state of the crystal film has an in-plane distribution. The in-plane distribution of the crystallized substrate with the crystal film is generated by the variation of the laser energy with respect to the time axis and the irradiation energy distribution of the laser beam. The irradiation energy distribution of the laser beam is generated due to aberrations of the laser irradiation optical system such as a lens group disposed in the optical path from the laser transmission source to the substrate and an optical axis error.

The excimer laser annealing apparatus requires maintenance such as cleaning of the optical system, that is, maintenance work according to a certain period or the number of times of laser irradiation.
The laser irradiation energy distribution resulting from the maintenance work does not become constant as the optical conditions of the optical system change for each maintenance work described above. When the crystallization state of the substrate to which laser energy is applied is measured, the crystallization state varies depending on the location in the plane of the crystallization substrate. Therefore, the set value of the laser energy obtained using the power monitor substrate is affected by the change of the laser energy distribution for each maintenance work, and the accuracy of the set value of the laser energy is lowered.

Also, an appropriate laser energy setting value is set for the excimer laser annealing apparatus. Thereafter, in order to manufacture a TFT substrate, laser energy is applied to the crystallized substrate for a product crystallized by solid phase growth using the excimer laser annealing apparatus, and the crystallization process is advanced. As described above, since the crystallization state has an in-plane distribution in the substrate, in order to inspect the crystallization state of the crystallization substrate for the product and perform quality control, the crystallization state in the substrate is too small. And it is necessary to identify the excessive points. In other words, since the positions of the under- and over-crystallized states in the substrate are unspecified, a large number of measurement points for measuring the crystallized state must be set in the substrate. As a result, the inspection time becomes longer,
It is necessary to take measures such as limiting the number of measurement points discretely or conducting sampling inspection. Therefore, the inspection accuracy in the process is lowered.

Accordingly, an object of the present invention is to provide a crystal film inspection method and an inspection apparatus that can form a crystal film that can obtain a desired degree of crystallinity and that can achieve stable operation of the manufacturing process. is there.

The present invention is an inspection in which an irradiation shape is a substantially rectangular shape extending in a predetermined first direction, and a laser beam for promoting crystal growth of a crystal film is scanned and irradiated in a second direction orthogonal to the first direction. A method for inspecting a target crystal film,
A first step of inspecting a crystallization state of a monitor crystal film irradiated with a laser beam while being irradiated in a second direction while changing irradiation energy at a plurality of inspection sites arranged in the first and second directions;
Based on the inspection result of the first step, a second step of setting an inspection condition including at least an inspection site when inspecting the crystal film to be inspected,
And a third step of inspecting the crystal film to be inspected using the inspection conditions set in the second step.

According to the present invention, in the first step, the crystallization state of the monitoring crystal film irradiated with the laser beam while being scanned in the second direction while changing the irradiation energy is determined in the first direction and the first direction. Inspection is performed at a plurality of inspection sites arranged in a second direction orthogonal to the direction. In the second step, based on the inspection result of the first step, the inspection condition including at least the inspection region when inspecting the inspection target crystal film is set. In the third step, the inspection target crystal film is inspected using the inspection conditions set in the second step.

In particular, in the first step, the crystallization state of the monitoring crystal film is inspected at a plurality of inspection sites arranged in the first and second directions, and the inspection target crystal film is inspected based on the inspection result. Since the inspection conditions including at least the inspection part are set, the inspection part to be inspected is substantially specified even if the in-plane distribution occurs in the crystallization state of the monitoring crystal film. be able to.

For example, since it is possible to substantially specify the under and over portions of the crystallized state, it is possible to measure and inspect the crystal film to be inspected with higher accuracy than in the prior art. Therefore, it is possible to form a crystal film with a desired degree of crystallinity, and to achieve stable operation of the manufacturing process.

The present invention is characterized in that the inspection condition of the crystal film in the second step is automatically set by the automatic control means when the inspection result is obtained in the first step.

According to the present invention, the inspection condition of the crystal film is automatically set by the automatic control means when the inspection result is obtained in the first step. Therefore, the inspection conditions for the crystal film can be set accurately in a short time.

In the present invention, the first step is:
A first stage for determining the crystallization state of each inspection site as an inspection value that increases as the degree of crystal growth increases;
Each test site is divided into a plurality of test site columns arranged in the first direction with each test site arranged in the second direction as one column, and the test site having the maximum test value is extracted for each test site column And the second stage
And a third stage for extracting a test site sequence having a maximum test value with the minimum irradiation energy among the test site sequences.

According to the present invention, in the first stage, the crystallization state of each inspection site is obtained as an inspection value that increases as the degree of crystal growth increases. In the second stage,
Each test site is divided into a plurality of test site columns arranged in the first direction with each test site arranged in the second direction as one column, and the test site having the maximum test value is extracted for each test site column To do. In the third stage, the examination part sequence having the maximum examination value with the minimum irradiation energy is extracted from each examination part series. In particular, since the inspection site sequence having the maximum inspection value is obtained with the minimum irradiation energy for suppressing the crystallization state, the distribution state of the irradiation energy for proceeding the crystallization state is fluctuating. Even if it is, measurement suitable for the distribution state can be performed.

In the present invention, the second step includes
Each test site is divided into a plurality of test site rows arranged in the second direction, with each test site arranged in the first direction as one row, and the test value in the test site sequence extracted in the third stage of the first step is Extract the test part line that has the maximum test part,
Extract the test site where the test value in this test site line is the maximum and the test site where the test value is the minimum,
Each inspection part of the inspection part row having these two inspection parts is set as an inspection part when inspecting a crystal film to be inspected in an inspection condition.

According to the present invention, in the second step, each examination site is divided into a plurality of examination site rows arranged in the second direction, with each examination site arranged in the first direction as one row.
A test part row having a test part having a maximum test value in the test part sequence extracted in the stage is extracted. In addition, the test site where the test value in the test site row is the maximum value and the test site where the test value is the minimum value are extracted. Each inspection part of the inspection part row having these two inspection parts is set as an inspection condition as an inspection part when inspecting the crystal film to be inspected.

Thus, based on the test value in the test site column, the test site string can be set after extracting the test site where the test value in the test site row has the maximum value and the minimum value. In other words, it is possible to substantially specify the under and over portions of the crystallization state of the monitoring crystal film. Therefore, according to the present invention, the inspection site is randomly limited or without taking measures such as sampling inspection,
Inspection conditions can be set. Therefore, the inspection of the crystallization state of the crystal film can be realized with higher accuracy than in the prior art.

In the present invention, the first step further includes a fourth stage of extracting a test site sequence having a maximum test value with the maximum irradiation energy among the test site sequences,
The second process includes the irradiation energy of the test site where the test value in the test site sequence extracted in the third stage of the first process is the maximum value, and the test in the test site sequence extracted in the fourth stage of the first process. When the energy difference from the irradiation energy of the examination site where the value is the maximum value is obtained, it is determined whether or not this energy difference is within a predetermined energy range, and when it is determined that it is out of the range, the crystal film for monitoring Is determined to be abnormal.

According to the present invention, in the fourth stage of the first step, the examination part sequence having the maximum examination value with the maximum irradiation energy is extracted from each examination part series. In the second process, the irradiation energy of the test site where the test value in the test site sequence extracted in the third stage of the first process is the maximum value, and the test in the test site string extracted in the fourth stage of the first process An energy difference from the irradiation energy of the examination site where the value is the maximum value is obtained.

Thereafter, it is determined whether or not this energy difference is within a predetermined energy range.
When it is determined that the required energy difference is outside the energy range, it is determined that the monitoring crystal film is abnormal. Conversely, when it is determined that the required energy difference is within the energy range, it is determined that the monitoring crystal film is normal. In this way, it is possible to realize abnormality determination of the monitoring crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

In the present invention, the second step determines whether or not the maximum value of the test value in the test site sequence extracted in the third stage of the first step is within a preset test value range,
When it is determined that it is out of the range, it is determined that the monitor crystal film is abnormal.

According to the present invention, in the second process, it is determined whether or not the maximum value of the test value in the test site sequence extracted in the third stage of the first process is within a preset test value range. When it is determined that the maximum value of the test value in the extracted test site sequence is outside the test value range, the monitor crystal film is determined to be abnormal. Conversely, when it is determined that the maximum value of the inspection value is within the inspection value range, the monitoring crystal film is determined to be normal. In this way, it is possible to determine abnormality of the monitor crystal film.
At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

In the present invention, the irradiation shape is a substantially rectangular shape extending in a predetermined first direction, and a laser beam for promoting crystal growth of the crystal film is scanned and irradiated in a second direction orthogonal to the first direction. An apparatus for inspecting a crystal film to be inspected,
Monitor inspection means for inspecting the crystallization state of the crystal film for monitoring, which is scanned in the second direction and irradiated with the laser beam while changing the irradiation energy, at a plurality of inspection sites arranged in the first and second directions;
Condition setting means for setting an inspection condition including at least an inspection part when inspecting the crystal film to be inspected based on the inspection result by the monitor inspection means;
A crystal film inspection apparatus comprising: a target film inspection unit that inspects an inspection target crystal film using an inspection condition set by a condition setting unit.

According to the present invention, the irradiation shape is a substantially rectangular shape extending in a predetermined first direction,
In an apparatus for inspecting an inspection target crystal film irradiated with a laser beam for promoting crystal growth of the crystal film in a second direction orthogonal to the first direction, the monitor inspection means changes the irradiation energy. The crystallization state of the monitoring crystal film that is scanned in the second direction and irradiated with the laser beam is inspected at a plurality of inspection sites arranged in the first and second directions.

The condition setting means sets an inspection condition including at least an inspection site when inspecting the crystal film to be inspected based on the inspection result by the monitor inspection means. The target film inspection unit inspects the inspection target crystal film using the inspection condition set by the condition setting unit.

In particular, the crystallization state of the monitoring crystal film is inspected at a plurality of inspection parts arranged in the first and second directions, and at least the inspection part when inspecting the inspection target crystal film based on the inspection result Therefore, even if the in-plane distribution is generated with respect to the crystallization state of the monitoring crystal film, the inspection site to be inspected can be substantially specified.

For example, since it is possible to substantially specify the under and over portions of the crystallized state, it is possible to measure and inspect the crystal film to be inspected with higher accuracy than in the prior art. Therefore, it is possible to form a crystal film with a desired degree of crystallinity, and to achieve stable operation of the manufacturing process.

The present invention also provides a monitor inspection means,
Obtain the crystallization state of each inspection site as an inspection value that increases as the degree of crystal growth increases,
Each test site is divided into a plurality of test site columns arranged in the first direction with each test site arranged in the second direction as one column, and the test site having the maximum test value is extracted for each test site column And
It further includes control means for extracting the examination part sequence having the maximum examination value with the minimum irradiation energy among the examination part series.

According to the present invention, the control means obtains the crystallization state of each inspection site as an inspection value that increases as the degree of crystal growth increases, and each inspection site is arranged in the second direction. As one row, it can be divided into a plurality of examination site rows arranged in the first direction. Further, by the control means, for each examination part sequence, the examination part having the maximum examination value is extracted, and among each examination part series, the examination part sequence having the maximum examination value with the minimum irradiation energy is extracted. can do.

In particular, since the inspection site sequence having the maximum inspection value is obtained with the minimum irradiation energy for suppressing the crystallization state, the distribution state of the irradiation energy for proceeding the crystallization state is fluctuating. Even if it is, measurement suitable for the distribution state can be performed.

In the present invention, the control means further includes:
Each test site is divided into a plurality of test site rows arranged in the second direction, with each test site arranged in the first direction as one row, and has a test site in which the test value in the test site sequence to be extracted is the maximum value. Extract the inspection part line,
Extract the test site where the test value in this test site line is the maximum and the test site where the test value is the minimum,
It has a function of setting each inspection part of the inspection part row having these two inspection parts as an inspection part when inspecting a crystal film to be inspected in an inspection condition.

According to the present invention, the control means extracts the inspection part sequence having the maximum inspection value with the maximum irradiation energy among the inspection part sequences with respect to the monitor inspection means.
In addition, with respect to the condition setting means by the control means, the irradiation energy of the examination site where the examination value in the extracted examination site string becomes the maximum value and the examination value in the examination site string extracted by the monitor examination means become the maximum value. An energy difference from the irradiation energy of the examination site is obtained, and it is determined whether or not this energy difference is within a predetermined energy range.

When it is determined that the required energy difference is outside the energy range, it is determined that the monitoring crystal film is abnormal. Conversely, when it is determined that the required energy difference is within the energy range, it is determined that the monitoring crystal film is normal.
In this way, it is possible to realize abnormality determination of the monitoring crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

In the present invention, the control means further includes:
With respect to the monitor inspection means, the inspection part sequence where the inspection value becomes the maximum value is extracted with the maximum irradiation energy among the inspection part sequences,
With regard to the condition setting means, the irradiation energy of the examination part where the inspection value in the extracted examination part sequence becomes the maximum value and the irradiation energy of the examination part where the inspection value in the examination part sequence extracted by the monitor inspection means becomes the maximum value And determining whether or not the energy difference is within a predetermined energy range, and determining that the crystal film for monitoring is abnormal when it is determined that the energy difference is out of the range. It is characterized by.

According to the present invention, the control means extracts the inspection part sequence having the maximum inspection value with the maximum irradiation energy among the inspection part sequences with respect to the monitor inspection means.
In addition, with respect to the condition setting means by the control means, the irradiation energy of the examination site where the examination value in the extracted examination site string becomes the maximum value and the examination value in the examination site string extracted by the monitor examination means become the maximum value. The energy difference from the irradiation energy of the examination site is obtained. The control means determines whether this energy difference is within a predetermined energy range. In this way, it is possible to realize abnormality determination of the monitoring crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

In the present invention, the control means further includes:
Regarding the condition setting means, when it is determined that the maximum value of the test value in the test site sequence extracted by the monitor test means is within a preset test value range, The monitoring crystal film has a function of determining that it is abnormal.

According to the present invention, the control means determines whether or not the maximum value of the test value in the test site sequence extracted by the monitor test means is within a preset test value range with respect to the condition setting means. The maximum value of the test value in the extracted test site sequence is
When it is determined that the value is outside the inspection value range, it is determined that the monitoring crystal film is abnormal. Conversely, when it is determined that the maximum value of the inspection value is within the inspection value range, the monitoring crystal film is determined to be normal. In this way, it is possible to realize abnormality determination of the monitoring crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

As described above, according to the present invention, in particular, in the first step, the crystallization state of the monitoring crystal film is inspected at a plurality of inspection sites arranged in the first and second directions. Based on the setting of the inspection conditions including at least the inspection site when inspecting the inspection target crystal film, about the crystallization state of the monitor crystal film,
Even in the state where the in-plane distribution is generated, the inspection site to be inspected can be substantially specified.

For example, since it is possible to substantially specify the under and over portions of the crystallized state, it is possible to measure and inspect the crystal film to be inspected with higher accuracy than in the prior art. Therefore, it is possible to form a crystal film with a desired degree of crystallinity, and to achieve stable operation of the manufacturing process.

According to the present invention, the inspection condition for the crystal film is automatically set by the automatic control means when the inspection result is obtained in the first step. Therefore, the inspection conditions for the crystal film can be set accurately in a short time.

According to the present invention, in particular, since the inspection site sequence in which the inspection value becomes the maximum value is obtained with the minimum irradiation energy for suppressing the crystallization state, the irradiation energy for proceeding the crystallization state is assumed. Even if the distribution state of fluctuates, measurement suitable for the distribution state can be performed.

Moreover, according to this invention, after extracting the test | inspection site | part from which the test value in a test | inspection site | part row becomes the maximum value and the minimum value based on the test value in a test | inspection site | part sequence, the said test | inspection site | part sequence can be set. In other words, it is possible to substantially specify the under and over portions of the crystallization state of the monitoring crystal film. Therefore, according to the present invention, the inspection condition can be set without limiting the inspection region at random or taking measures such as a sampling inspection. Therefore, the inspection of the crystallization state of the crystal film can be realized with higher accuracy than in the prior art.

According to the present invention, when it is determined that the required energy difference is outside the energy range, the monitoring crystal film is determined to be abnormal. Conversely, when it is determined that the required energy difference is within the energy range, it is determined that the monitoring crystal film is normal. In this way, it is possible to realize abnormality determination of the monitoring crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

Further, according to the present invention, when it is determined that the maximum value of the test value in the extracted test site sequence is outside the test value range, the monitor crystal film is determined to be abnormal.
Conversely, when it is determined that the maximum value of the inspection value is within the inspection value range, the monitoring crystal film is determined to be normal. In this way, it is possible to determine abnormality of the monitor crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

According to the present invention, in particular, the crystallization state of the monitoring crystal film is inspected at a plurality of inspection sites arranged in the first and second directions, and based on the inspection result, the crystal film to be inspected is determined. Since the inspection conditions including at least the inspection part at the time of inspection are set, the inspection part to be inspected is substantially omitted even if the in-plane distribution occurs in the crystallization state of the monitoring crystal film. Can be identified.

For example, since it is possible to substantially specify the under and over portions of the crystallized state, it is possible to measure and inspect the crystal film to be inspected with higher accuracy than in the prior art. Therefore, it is possible to form a crystal film with a desired degree of crystallinity, and to achieve stable operation of the manufacturing process.

According to the present invention, in particular, since the inspection site sequence in which the inspection value becomes the maximum value is obtained with the minimum irradiation energy for suppressing the crystallization state, the irradiation energy for proceeding the crystallization state is assumed. Even if the distribution state of fluctuates, measurement suitable for the distribution state can be performed.

According to the present invention, when it is determined that the required energy difference is outside the energy range, the monitoring crystal film is determined to be abnormal. Conversely, when it is determined that the required energy difference is within the energy range, it is determined that the monitoring crystal film is normal. In this way, it is possible to realize abnormality determination of the monitoring crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

Further, according to the present invention, with respect to the condition setting means by the control means, the irradiation energy of the examination part where the examination value in the examination part string extracted is the maximum value, and the examination in the examination part string extracted by the monitor examination means An energy difference from the irradiation energy of the examination site where the value is the maximum value is obtained. Further, it is determined by the control means whether or not the energy difference is within a predetermined energy range. In this way, the abnormality determination of the monitoring crystal film can be realized by the control means. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

Further, according to the present invention, when it is determined that the maximum value of the test value in the extracted test site sequence is outside the test value range, the monitor crystal film is determined to be abnormal.
Conversely, when it is determined that the maximum value of the inspection value is within the inspection value range, the monitoring crystal film is determined to be normal. In this way, it is possible to realize abnormality determination of the monitoring crystal film. At least the inspection conditions for the crystal film can be set based on the abnormality determination of the monitor crystal film.

FIG. 1 is a flowchart showing stepwise a crystal film inspection method according to an embodiment of the present invention. In FIG. 1, ai (i = 1, 2, 3,...) Indicates a step.
The present embodiment relates to a technique used, for example, through a crystallization process by an excimer laser annealing apparatus when manufacturing a liquid crystal display panel. In order to set the conditions of the excimer laser annealing apparatus, a crystallized substrate subjected to laser annealing treatment by changing the laser energy stepwise is manufactured as a power monitor substrate. The crystallization state of the power monitor substrate is measured to obtain data necessary for setting the laser energy condition of the excimer laser annealing apparatus. The measurement of the crystallization state is referred to as power monitor measurement.

After starting this flow in step a0, in step a1,
Power monitor measurement is performed in accordance with power monitor measurement conditions registered in advance in the excimer laser annealing apparatus. Next, the process proceeds to step a2 where inspection conditions are set. In other words, it is data of measurement values obtained by power monitor measurement,
Using the data representing the relationship between the laser energy of the excimer laser annealing apparatus and the measured value of the crystallization state, the inspection conditions described later necessary for the inspection of the crystallized substrate for products to be manufactured are set. Next, in step a3, the state shifts to a state in which the product crystallized substrate is inspected. That is, the product crystallized substrate is inspected based on the inspection conditions set in step a2. Thereafter, the process proceeds to step a4, and this flow is terminated.

FIG. 2 is a diagram schematically showing the configuration of the inspection apparatus 2 for the crystal film 1 according to the embodiment of the present invention. The inspection apparatus 2 mainly includes a substrate positioning mechanism, an illumination 4, a camera 5,
The image processing apparatus 6 and a control personal computer 7 are included. The substrate positioning mechanism 3 includes an XY stage 3a and an XY stage driving mechanism (not shown). The XY stage 3a is a stage that supports the power monitor substrate 10 or the crystallization substrate 8 for product, and is an X direction that is a second direction along the longitudinal direction of the rectangular XY stage 3a and the supported product. The crystallization substrate 8 is configured to be movable in a thickness direction and a Y direction (see FIG. 3) which is a first direction orthogonal to the X direction. On one surface of the power monitor substrate 10 or the product crystallization substrate 8,
Crystal films 1A and 1 are respectively formed. The crystal film 1A corresponds to a monitor crystal film, and the crystal film 1 corresponds to an inspection target crystal film. The product crystallized substrate 8 is simply
Sometimes referred to as a crystallized substrate.

The XY stage driving mechanism has an X direction driving mechanism and a Y direction driving mechanism (not shown). These X direction drive mechanisms have a drive source that can move and drive the XY stage 3a in the X direction, and the Y direction drive mechanism has a drive source that can move and drive the XY stage 3a in the Y direction. The power monitor substrate 10 or the crystallization substrate 8 is configured to be moved and positioned in the X and Y directions by the XY stage 3a and the XY stage driving mechanism.

The illumination 4 irradiates one surface portion of the crystallized substrate 8 with light. In other words, the illumination 4 is generated in the thickness direction of the crystallized substrate 8 and from the oblique direction with respect to the thickness direction.
It is comprised so that the light for a test | inspection may be emitted. The camera 5 is supported by one side in the thickness direction of the crystallized substrate 8 and is provided so as to be able to image the one surface portion irradiated by the illumination 4. The camera 5 is a charge coupled device (abbreviated as CCD: Charge Coupled).
Imaging is realized by a (Device) sensor. The image processing device 6 can acquire and hold the image data captured by the camera 5 and process the data to calculate desired information.
The control personal computer 7 controls the substrate positioning mechanism 3, the image processing apparatus 6, and the entire apparatus. The control personal computer 7 has a storage medium (not shown) in which measurement and inspection conditions are registered and stored. The control personal computer 7 will be referred to as a control PC 7 in the following description.

There are two types of measurement and inspection conditions stored in the control PC 7. That is, of the two types of measurement and inspection conditions, a measurement point that is an inspection site for power monitor measurement and its criterion data correspond to one measurement and inspection condition. Of the two types of measurement and inspection conditions, a measurement point that is an inspection site for inspection of a crystallized substrate for product and its criterion data correspond to one measurement and inspection condition.

When the crystallization of the power monitor substrate 10 or the crystallization substrate 8 proceeds by laser annealing, irregularities are generated at the crystal grain boundaries. When the unevenness is irradiated with light by the illumination 4, scattered light is sensed by the camera 5 and observed as a bright image on the image of the camera 5. There is a correlation between the progress of crystallinity and the uneven state. The crystallization state of the power monitor substrate 10 or the crystallization substrate 8 can be measured by the correlation and the brightness of the image, that is, the density value. The control PC 7 corresponds to condition setting means and target film inspection means.

The substrate positioning mechanism 3, the illumination 4, the camera 5, the image processing device 6, and the control personal computer 7 correspond to monitor inspection means.

FIG. 3 is a diagram illustrating the measurement points 9 formed in the crystallization region, and is a diagram for explaining power monitor measurement. In order to set the laser energy setting value of the excimer laser annealing apparatus, the power monitor substrate 10 having the crystal film 1A formed on one surface portion is used. The power monitor substrate 10 is formed in a rectangular shape, and is arranged so that one side in the longitudinal direction of the rectangular shape is parallel to the longitudinal direction of the XY stage, that is, the X direction.

Here, the excimer laser annealing apparatus is a power monitor substrate 10 to be irradiated.
On the other hand, it is configured to irradiate an elongated, substantially rectangular laser beam having a predetermined length in the Y direction and an X direction width extending a predetermined small distance in the X direction. That is, the laser beam of the excimer laser annealing apparatus has a substantially rectangular shape in which the irradiation shape extends in the Y direction, which is the first direction determined in advance, and has an effect of promoting crystal growth of the crystal film 1A and the crystal film 1. The laser beam is irradiated while being scanned in the X direction perpendicular to the Y direction and the thickness direction of the substrate. In the present embodiment, “substantially rectangular” includes “rectangular”. This excimer laser annealing apparatus includes a drive mechanism substantially equivalent to the XY stage drive mechanism. The excimer laser annealing apparatus irradiates the laser beam to the power monitor substrate 10 while scanning the power monitor substrate 10 in the X direction, which is the second direction, by the driving mechanism.

While feeding the power monitor substrate 10 in the X direction, the irradiation energy of the excimer laser annealing apparatus, that is, the laser energy set value is changed stepwise.
As a result, a plurality of crystallization regions 11 arranged in parallel to the longitudinal direction of the substrate are formed.
In FIG. 3, ten crystallized regions 11 from “a” to “j” are formed. The ten crystallized regions 11 correspond to a plurality of inspection site rows.

As described above, the shape of the laser beam of the excimer laser annealing apparatus is Y
It has an elongated rectangular shape extending along the direction. During laser annealing,
The power monitor substrate 10 is irradiated with a laser beam in an elongated shape along the short side direction, that is, the Y direction, and scanning is performed in the longitudinal direction of the substrate by relative movement between the laser beam and the substrate position. .

Thus, by subjecting one surface portion of the power monitor substrate 10 to laser annealing, one surface portion of the power monitor substrate 10 is partially crystallized. The laser annealing treatment is repeatedly performed in a certain amount in the longitudinal direction of the substrate, the laser energy set value is changed, and the laser annealing treatment is further performed in a certain amount in the longitudinal direction of the substrate. Thereby, a plurality of crystallized regions 11 are formed in the longitudinal direction of the substrate. Moreover, each crystallization region 11 is formed to extend along the direction of the short side of the substrate. That is, each crystallization region 11 on one surface portion of the power monitor substrate 10 is
Crystallization is performed in the range of the width of the laser beam shape in the long axis direction, and each of the crystallization regions 11 is a region having the same length as the length of the laser beam shape in the long axis direction.

In ten crystallization regions 11 (measurement point rows 11) from “a” to “j”, measurement points 9 are set as measurement points in the power monitor measurement. In each crystallization region 11, a plurality of measurement points 9 are set at regular intervals along the laser beam long axis direction. Each measurement point 9 as each examination part is divided into a plurality of measurement point sequences 12 arranged in parallel in the Y direction, with each measurement point 9 arranged in the X direction as one column. In addition, each measurement point 9 is divided into a plurality of measurement point rows 11 arranged in parallel to the X direction, that is, the crystallization region 11, with each measurement point 9 arranged in the Y direction as one row. The measurement point sequence 12 corresponds to a test site column, and the measurement point row 11 corresponds to a test site row.

In the present embodiment, as shown in FIG.
Nine measurement points 9 corresponding to the measurement point sequence 12 from “I” to “I” are set.
These measurement point sequences 12 are arranged in a direction parallel to the longitudinal direction of the substrate, that is, the X direction. The plurality of measurement points 9 set in the crystallization region 11 are also set in the same arrangement relationship in each crystallization region 11 in the substrate longitudinal direction in which the laser energy setting value is changed stepwise.

Specifically, in the crystallization region “a”, the measurement point sequence 1 from “A” to “I” 1
Nine measurement points 9 corresponding to 2 are set at regular intervals along the laser beam long axis direction. The crystallization region “b” adjacent to the crystallization region “a” in the longitudinal direction of the substrate.
”Also includes nine measurement points 9 corresponding to the measurement point sequence 12 from“ A ”to“ I ”.
Are set at regular intervals along the laser beam major axis direction. Similarly, with respect to the other crystallized regions “c to j”, nine measurement points 9 corresponding to the measurement point sequence 12 from “A” to “I” are arranged at regular intervals along the laser beam major axis direction. It is set every other.

As described above, the plurality of measurement points 9 set in the crystallization region 11 are also set in the same arrangement relation in each crystallization region 11 in the substrate longitudinal direction in which the laser energy setting value is changed stepwise. The plurality of measurement points 9 are arranged in a two-dimensional matrix state arranged in the X and Y directions. The measurement point sequence 12 is a measurement point sequence that can measure the crystallization state according to the laser energy setting value of the excimer laser annealing apparatus without being affected by the laser energy distribution in the laser beam long axis direction.

FIG. 4 is a diagram illustrating measurement values in power monitor measurement. The horizontal axis of FIG. 4 shows the laser energy setting value of the excimer laser annealing apparatus, and the vertical axis shows the measurement values as inspection values corresponding to the plurality of measurement points 9, respectively.
The data line in FIG. 4 shows the laser energy distribution. A plurality of vertical lines L1 parallel to the vertical axis correspond to the respective measurement points 9 from the crystallization region “a” to the crystallization region “j”. Intersections between the laser energy distribution and the vertical lines L1 indicate measurement values at the respective measurement points 9.

As data lines in FIG. 4, among the nine measurement point sequences 12 from “A” to “I”, data lines of three characteristic measurement point sequences 12 are illustrated for explanation. As the laser energy set value increases, crystallization progresses and the measured value increases.
In other words, the crystallization state at each measurement point 9 is obtained as a measurement value that increases as the degree of crystal growth increases.

When laser energy exceeding the laser energy corresponding to the maximum measured value is applied to the power monitor substrate 10, the measured value decreases as the laser energy set value increases. The decrease in the measured value is considered that the laser energy becomes excessive for crystallization and fine crystal grains are generated, so that the amount of reflected illumination light is reduced. In the case where laser energy that results in a crystallization state in which such fine crystal grains are generated is applied to the product crystallization substrate 8 (see FIG. 6), one surface portion of the product crystallization substrate 8 is applied. Thin film transistor (TFT: Thin)
Film Transistor) performance is reduced. Therefore, it is determined that the product crystallized substrate 8 is defective.

In the power monitor measurement, the measurement point sequence 12 having the maximum measured value is extracted from each measurement point sequence 12 with the minimum laser energy. Specifically, the laser energy at which the measured value is the maximum, that is, the peak position is calculated for each measurement point sequence 12. The peak position calculated for each measurement point sequence 12 is different for each measurement point sequence 12. After calculating the laser energy, a peak position difference δ, which is a difference between the peak positions of all the measurement point sequences 12, is obtained.

In other words, the measurement point sequence 12 where the measurement value becomes the maximum value with the minimum laser energy.
In the step of extracting the laser energy of the measurement point 9 where the measurement value in the measurement point sequence 12 extracted in the step of extracting the maximum value and the measurement point sequence 12 in which the measurement value becomes the maximum value with the maximum laser energy is extracted. An energy difference from the laser energy at the measurement point 9 at which the measurement value in the extracted measurement point sequence 12 becomes the maximum value is obtained. The peak position difference δ is generated by the energy distribution in the long axis direction of the laser beam, that is, in the Y direction. The energy distribution in the major axis direction of the laser beam, that is, the energy difference is calculated as the peak position difference δ.

Of the data lines of the three measurement point sequences 12, the data line L2 represented by a solid line is:
It is of the measurement row with the maximum energy in the energy distribution in the laser beam long axis direction. With respect to the data lines of the three measurement point sequences 12, the measured value reaches the peak with the minimum laser energy setting value. Of the data lines of the three measurement point sequences 12, the data line L3 represented by a thick broken line is that of the measurement point sequence 12 having the smallest energy in the energy distribution in the laser beam long axis direction. With respect to the data lines of the three measurement point sequences 12, the measurement value reaches the peak at the maximum laser energy setting value.
The peak position data of the measurement point sequence 12 at which the measured value reaches the peak with the minimum laser energy setting value is calculated as the optimum peak position 14.

FIG. 5 is a diagram showing the relationship between the laser beam distribution in the laser beam long axis direction and the measurement value in a region where the maximum measurement value can be obtained with the minimum laser energy setting value. The vertical axis in FIG. 5 shows the measurement value as the inspection value. A plurality of vertical lines L4 parallel to the vertical axis are measurement points that intersect the nine measurement point sequences 12 from “A” to “I”, respectively. The intersection of the intensity distribution of the laser energy and the vertical line L4 indicates the measurement value at the measurement point of the vertical line, that is, the measurement point sequence 12. The intensity distribution of the laser energy with respect to the measurement point 9 is not constant. That is, in the crystallization region 11 where the measured value reaches the peak with the minimum laser energy setting value, the measured value point 15 where the measured value becomes the maximum value and the measured value point 16 where the measured value becomes the minimum value exist. To do.

Regarding the measurement operation of the power monitor board 10 in this embodiment, the control P
Power monitor measurement is performed using the power monitor condition data registered and stored in the storage medium in C7. The power monitor condition includes a plurality of measurement points 9 having coordinate values of the measurement points 9 and a determination criterion. This criterion is a criterion for determining whether the result of power monitor measurement is valid or invalid. The determination criterion includes a parameter and an upper limit value for determining the peak position difference δ. The parameter determines the upper limit and the lower limit of the measured value at the optimum peak position 14.

The control PC 7 reads the power monitor condition data from the storage medium and uses it for the control operation. The power monitor substrate 10 is positioned at a predetermined position in the inspection apparatus 2 via an operator or a substrate transport mechanism. The positioned power monitor substrate 10 moves through the substrate positioning mechanism 3 controlled by the control PC 7. That is, the power monitor substrate 10 is moved to a position where the registered measurement point 9 can be observed by the optical system including the illumination 4 and the camera 5. Then illumination 4
A plurality of measurement points 9 are observed using the camera 5 and the observed image is transferred to the image processing device 6. The image processing device 6 performs image processing on the transferred observation image and calculates a measurement value. In the measurement value calculation method in the present embodiment, the observation image obtained by the optical system including the illumination 4 and the camera 5 is quantized,
Based on the obtained density value of each pixel, an average value in the captured image is calculated and used.

The control PC 7 as a control means controls each device, performs this control operation at the plurality of measurement points 9 described above, and measures the crystallization state of the power monitor substrate 10. After measuring the crystallization state, the control PC 7 searches the peak position of the measurement value for each measurement point sequence 12. Further, the control PC 7 calculates and outputs the optimum peak position 14 and the peak position difference δ. Further, the control PC 7 determines the measured value at the optimum peak position 14 and the value of the peak position difference δ according to the determination criterion. The determination criterion is synonymous with the determination criterion of the measurement value within the power monitor measurement condition.

When the measured value at the optimum peak position 14 exceeds the upper limit reference value or falls below the lower limit reference value, the power monitor substrate 10 is determined as a defective product.
That is, when it is determined that the measured value at the optimal peak position 14 is outside the preset inspection value range, it is determined that the monitoring crystal film is abnormal. Even when the value of the peak position difference δ exceeds the upper limit reference value, the power monitor substrate 10 is determined as a defective product. That is, when it is determined that the value of the peak position difference δ is outside the predetermined energy range, it is determined that the monitoring crystal film is abnormal. When the measured value is within the upper limit reference value and equal to or greater than the lower limit reference value, and the value of the peak position difference δ is within the upper limit reference value, the power monitor substrate 10 is determined as a non-defective product, and the determination is made. Output the result. If the power monitor substrate 10 is determined as a defective product, it means that the power monitor substrate 10 is not in an appropriate crystallization state.

After performing the power monitor measurement described above, the inspection condition of the product crystallization substrate 8 is set using the power monitor measurement result. Hereinafter, the process for setting the inspection condition using the power monitor measurement result will be described. As a function of inspecting the product crystallized substrate 8, a function of measuring a plurality of arbitrary positions in one surface portion of the product crystallized substrate 8 and a measured value of the measurement point 9 on the product crystallized substrate 8 are set as upper limit standards. There is a function for determining pass / fail using the value and the lower limit reference value. Regarding the inspection of the crystallized substrate 8 for products, the measured value is low when crystallization is insufficient. When the measured value is lower than the lower limit reference value, it is determined that the product crystallized substrate 8 is insufficient and the product crystallized substrate 8 is determined to be defective.

In the laser annealing process, when the laser energy becomes excessive, the TFT characteristics of the product deteriorate due to the generation of fine crystal grains as described above. Therefore, when the measured value is a value near the peak, the determination is made in consideration of the fluctuation width of the laser energy as a margin. Therefore, the upper limit reference value of the measured value can be set so that it can be handled as a defective product with a high possibility of generating fine crystal grains. If the measured value exceeds the upper reference value, the product crystallized substrate 8 is determined to be defective.

Moreover, the upper limit value of the defect measurement point in one surface part of the crystallization substrate 8 for products can also be set as the determination condition. That is, all the measurement points 9 in the one surface portion.
The upper and lower scores of the measurement points 9 that are determined to be defective are determined. Only when a defective measurement point 9 exceeding the upper limit score is detected, the measurement result of the crystallized substrate for product 8 is determined to be defective, and the others are determined to be good.

FIG. 6 is a diagram illustrating the measurement points 9 under the inspection conditions. FIG. 3 is also described.
The measurement point group 17 includes nine points corresponding to the measurement point sequence 12 from “A” to “I” at regular intervals in the short-side direction of the laser beam, which is the long axis direction of the laser beam, and the laser beam and the substrate 8. A total of 81 measurement points 9 of 9 points are arranged at regular intervals in the substrate longitudinal direction, which is the relative scanning direction. In this way, for the crystallized substrate 8 for products, X
Since the plurality of measurement points 9 arranged in the direction and the Y direction are arranged, the substrate 8 can be appropriately inspected even if the laser energy distribution changes.

The measurement point group 18 is a measurement point sequence 1 corresponding to the maximum measurement value point 15 and the minimum measurement value point 16 of the measurement values in the laser beam long axis direction obtained at the time of power monitor measurement.
2 is provided. In the present embodiment, “C” corresponding to the maximum measured value point 15.
”Measurement point sequence 12 and“ I ”measurement point sequence 1 corresponding to the minimum measurement value point 16
A measurement point group 18 is provided along 2. Moreover, the measurement point group 18 is provided with the same number of points corresponding to the crystallization region “a” to the crystallization region “i” in the substrate longitudinal direction, which is the relative scanning direction of the laser beam and the substrate 8. The control PC 7
At the end of power monitor measurement, measurement point group 1 based on the power monitor measurement result
A measurement point 9 shown in FIG. 8 is automatically generated as an inspection condition based on a program stored in advance in the control PC 7 and set as an inspection condition for a storage medium inside the control PC 7. The control PC 7 corresponds to automatic control means and inspection condition setting means.

In power monitor measurement, the measurement value at the maximum measurement value point 15 is used as a value that serves as a setting reference for the upper limit reference value of the measurement value of the inspection condition. The relationship between the laser energy and the measurement value in power monitor measurement is a discrete measurement value with the laser energy being stepwise. Therefore, even if the measured value of the peak position is correctly measured, this measured value includes an error. Therefore, a value obtained by adding a certain margin value to the maximum measurement value point 15 is set as the upper limit reference value of the measurement value of the inspection condition. In this way, the upper reference value can be set. In general, the laser energy setting condition of the excimer laser annealing apparatus is set to a laser energy value smaller than the laser energy value obtained at the optimum peak position 14 in order to suppress generation of fine crystal grains due to excessive laser power. Set.

Therefore, the margin value is determined including the adjustment amount for setting the laser energy value, and is set to a constant value. A method for setting the lower limit reference value of the measurement value will be described with reference to an example in which the laser annealing condition management reference in the manufacturing process is a laser energy range. In the power monitor measurement, since the relationship between the laser energy and the measurement value is clear, the measurement value at the measurement point 9 in the same laser energy region as that of the power monitor substrate 10 is used based on the control lower limit value of the laser energy. The lower limit reference value of the measured value is set.

By the way, the management standard in the manufacturing process is to generally manage the setting of laser energy in the range of laser energy from the optimum crystallization state in order to keep the electrical characteristics of the TFT such as electron mobility at a predetermined performance. . Since the laser energy set value obtained by the optimum peak position 14 is the laser energy set value in the optimum state of crystallization, the optimum peak position is considered as a reference.
The measured value in the crystallization region subjected to the laser annealing treatment with the setting in which the laser energy is reduced from the optimum peak position 14 by the necessary laser energy range is used.

In the present embodiment, as shown in FIG. 3, the measurement values are obtained at nine measurement points 9 along the measurement point sequence 12 from “A” to “I”. Here, the minimum value of the measurement values is obtained. Will be used. The minimum measured value obtained in the crystallization region 11 is used as a reference value for considering the lower limit reference value of the laser energy management reference value necessary for crystallization. When the lower limit reference value is actually set, crystallization is performed by laser annealing with a setting in which the laser energy is reduced from the optimum peak position 14 by a necessary laser energy range based on the same concept as the upper limit reference value described above. A lower limit reference value of the measurement value is set by a value obtained by subtracting a certain margin value from the minimum measurement value in the region 11.

Regarding the relationship between the crystallized state after laser annealing treatment and the measured value, there may be a difference in the measured value even if irradiation is performed with the same laser energy setting value when the conditions of the crystal film generation process fluctuate. . In the present embodiment, even if a variation factor occurs in the production process of the crystal film 1, it is possible to automatically set the determination reference value of the measurement value at the time of inspection with contents suitable for the conditions at the time of inspection. . In this way, the control PC 7 automatically creates an inspection condition from information obtained by power monitor measurement, and registers this inspection condition in a storage medium in the control PC 7.

Next, the inspection of the product crystallized substrate 8 annealed by the excimer laser annealing apparatus will be described. The control PC 7 reads the inspection condition registered in the storage medium and uses it for the control operation. The product crystallized substrate 8 positioned at a predetermined position in the inspection apparatus 2 via the operator or the substrate transport mechanism is moved via the substrate positioning mechanism 3. That is, the substrate positioning mechanism 3 controlled by the control PC 7
The registered measurement point 9 of the product crystallization substrate 8 is moved relatively to a position where it can be observed using the optical system including the illumination 4 and the camera 5.

The image processing device 6 performs image processing on the transferred observation image and calculates a measurement value. In the measurement value calculation method in the present embodiment, as in power monitor measurement, the observation image obtained by the optical system is quantized, and the obtained density value of each pixel is as follows.
An average value in the captured image is calculated and used. The control PC 7 controls each device and performs this control operation at a plurality of measurement points 9 set in the measurement point group 17 or the measurement point group 18 shown in FIG. Measure the crystallization state. When the measurement process at all measurement points 9 is completed, the results of all measurement points 9 are determined for each measurement point 9 according to the determination conditions of the inspection conditions. Further, the quality of the substrate 8 is determined based on the number of defective points at all the measurement points 9 within one surface portion of the substrate 8, and the determination result is output.

During the manufacture of the crystallized substrate 8 for products, the laser annealing conditions fluctuate and the crystal film 1
In the case where the crystallization state decreases, the measurement value of the measurement point sequence 12 set by the minimum measurement value point 16 exceeds the lower limit reference value, and thus the pass / fail judgment can be performed in the same manner as described above. When the crystallization state of the crystal film 1 has progressed too much and the laser energy becomes excessive, the measurement value of the measurement point sequence 12 set by the maximum measurement value point 15 exceeds the upper limit reference value. It is possible to make a pass / fail determination.

According to the method for inspecting the crystal film 1 described above, in the first step, the crystallization state of the crystal film 1A irradiated with the laser beam while being scanned in the X direction as the scanning direction while changing the laser energy is changed to X Further, inspection is performed at a plurality of measurement points 9 arranged in the Y direction. In the second step, an inspection condition including at least the measurement point 9 when inspecting the crystal film 1 is set based on the inspection result of the first step. In the third step,
The crystal film 1 is inspected using the inspection conditions that are set.

In particular, in the first step, the crystallization state of the crystal film 1A is inspected at a plurality of measurement points 9 arranged in the X and Y directions. Based on the inspection result, the product crystallization substrate 8
Since the inspection condition including the measurement point 9 when inspecting the crystal film 1 is set, the crystallization state of the crystal film 1A should be inspected even if the in-plane distribution occurs. The measurement point 9 can be substantially specified.

Since the crystallization state is inspected at the plurality of measurement points 9 arranged in the X and Y directions as described above, it is possible to substantially specify the under and over portions of the crystallization state. Can be measured and inspected with higher accuracy than the prior art. Therefore, it is possible to form the crystal film 1 with a desired degree of crystallinity, and to achieve stable operation of the manufacturing process.

The control PC 7 can automatically create inspection conditions from information obtained by power monitor measurement. Therefore, the inspection conditions for the crystal film 1 can be set accurately in a short time.

Further, according to the method for inspecting the crystal film 1 according to the embodiment of the present invention, in the first stage, the crystallization state at each measurement point 9 is obtained as a measurement value that increases as the crystal growth degree increases. In the second stage, each measurement point 9 is divided into a plurality of measurement point sequences 12 arranged in parallel in the Y direction, with each measurement point 9 arranged in the X direction as one column, and a measurement value is measured for each measurement point sequence 12. The measurement point 9 with the maximum value is extracted. In the third stage, the measurement point sequence 12 having the maximum measurement value is extracted from each measurement point sequence 12 with the minimum laser energy.

In particular, since the measurement point sequence 12 with the maximum inspection value is obtained with the minimum laser energy for suppressing the crystallization state, the distribution state of the laser energy for proceeding the crystallization state fluctuates. Even if it is, measurement suitable for the distribution state can be performed.

Further, according to the inspection method of the crystal film 1 according to the embodiment of the present invention, each measurement point 9 is
Each measurement point 9 arranged in the direction is taken as one row and divided into a plurality of measurement point rows arranged in the X direction.
A measurement point row 11 having a measurement point 9 where the measurement value in the measurement point sequence 12 extracted in the third stage of the first step becomes the maximum value, that is, the crystallization region 11 is extracted. Further, the measurement point 9 at which the measurement value in the crystallization region 11 becomes the maximum value and the measurement point 9 at which the measurement value becomes the minimum value are extracted. Each measurement point 9 of the measurement point sequence 12 having these two measurement points 9 is set as an inspection condition as a measurement point 9 when the crystal film 1 is inspected.

As described above, after extracting the measurement point 9 where the measurement value in the crystallization region 11 becomes the maximum value and the minimum value based on the inspection value in the measurement point sequence 12, the measurement point sequence 1
2 can be set. In other words, the inspection conditions can be set without substantially specifying the under and over portions of the crystal film 1A in the crystallization state or taking measures such as sampling inspection. Therefore, the inspection of the crystallization state of the crystal film 1 can be realized with higher accuracy than in the prior art.

Moreover, according to the inspection method of the crystal film 1 according to the embodiment of the present invention, in the fourth stage of the first process, the measurement value is the maximum value at the maximum laser energy in each measurement point sequence 12. A measurement point sequence 12 is extracted. In the second step, the laser energy at the measurement point 9 at which the measurement value in the measurement point sequence 12 extracted in the third step of the first step becomes the maximum value, and the measurement point sequence extracted in the fourth step of the first step An energy difference δ from the laser energy at the measurement point 9 at which the measured value at 12 is the maximum is obtained.

Thereafter, it is determined whether or not the energy difference δ is within a predetermined energy range. When it is determined that the required energy difference δ is outside the energy range, it is determined that the crystal film 1A is abnormal. Conversely, when it is determined that the required energy difference δ is within the energy range, it is determined that the crystal film 1A is normal. Thus, the abnormality determination of the crystal film 1A can be realized. The inspection conditions for the crystal film 1 can be set based on at least the abnormality determination of the crystal film 1A.

Moreover, according to the inspection method of the crystal film 1 according to the embodiment of the present invention, the third step of the first step.
It is determined whether or not the maximum value of the measurement values in the measurement point sequence 12 extracted in the step is within a preset measurement value range. When it is determined that the maximum measurement value in the extracted measurement point sequence 12 is outside the measurement value range, the crystal film 1A is determined to be abnormal. Conversely, when it is determined that the maximum value of the measured values is within the measured value range, it is determined that the crystal film 1A is normal. In this way, the abnormality determination of the crystal film for monitoring 1A can be realized. The inspection conditions for the crystal film 1 can be set based on at least the abnormality determination of the monitor crystal film 1A.

In the present embodiment, as an example of the method for measuring the crystallization state, the occurrence of unevenness at the crystal grain boundary is shown as an example of observation and measurement using the illumination 4 and the camera 5, but the relative correlation between the crystallization state and the measurement value is shown. Other inspection means using, for example, Raman spectroscopy may be used as long as the inspection means can obtain the above. In the present embodiment, the illumination uses a reflected illumination that irradiates light from an oblique direction with respect to the thickness direction of the substrate, but is not necessarily limited thereto. For example, for a crystal film formed on one surface portion of a glass substrate, it is possible to use transmitted illumination. In addition, various partial changes may be made to the embodiment without departing from the scope of the claims.

It is a flowchart which shows the test | inspection method of the crystal film 1 which concerns on embodiment of this invention in steps. It is a figure which shows schematically the structure of the test | inspection apparatus 2 of the crystal film 1 which concerns on embodiment of this invention. It is a figure showing the measurement point 9 formed in the crystallization area | region, Comprising: It is a figure for demonstrating power monitor measurement. It is a figure showing the measured value in power monitor measurement. It is a figure showing the relationship between the laser beam distribution of a laser beam long axis direction, and a measured value in the area | region where the maximum value of a measured value is obtained with the minimum laser energy setting value. It is a figure showing the measurement point 9 in test | inspection conditions.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Crystal film 3 Substrate positioning mechanism 4 Illumination 5 Camera 6 Image processing apparatus 7 Control PC
8 Crystallized substrate for product 9 Measurement point 10 Power monitor substrate 11 Crystallized region 12 Measurement point sequence 14 Optimal peak position 15 Measurement value point 16 Measurement value point

Claims (11)

An inspection target crystal film having an irradiation shape of a substantially rectangular shape extending in a predetermined first direction and irradiated with a laser beam for promoting crystal growth of the crystal film being scanned in a second direction orthogonal to the first direction. A method of inspecting,
A first step of inspecting a crystallization state of a monitor crystal film irradiated with a laser beam while being irradiated in a second direction while changing irradiation energy at a plurality of inspection sites arranged in the first and second directions;
Based on the inspection result of the first step, a second step of setting an inspection condition including at least an inspection site when inspecting the crystal film to be inspected,
And a third step of inspecting the crystal film to be inspected using the inspection condition set in the second step. 2. The crystal film inspection method according to claim 1, wherein the inspection condition of the crystal film in the second step is automatically set by automatic control means when an inspection result is obtained in the first step. The first step is
A first stage for determining the crystallization state of each inspection site as an inspection value that increases as the degree of crystal growth increases;
Each test site is divided into a plurality of test site columns arranged in the first direction with each test site arranged in the second direction as one column, and the test site having the maximum test value is extracted for each test site column And the second stage
3. The method for inspecting a crystal film according to claim 1, further comprising: a third step of extracting the inspection site row having the maximum inspection value with the minimum irradiation energy among the inspection site rows. The second step is
Each test site is divided into a plurality of test site rows arranged in the second direction, with each test site arranged in the first direction as one row, and the test value in the test site sequence extracted in the third stage of the first step is Extract the test part line that has the maximum test part,
Extract the test site where the test value in this test site line is the maximum and the test site where the test value is the minimum,
4. Each inspection part of the inspection part row having these two inspection parts is set to an inspection condition as an inspection part when inspecting a crystal film to be inspected.
The inspection method of the crystal film as described. The first step further includes a fourth stage of extracting a test site sequence having a maximum test value with the maximum irradiation energy among the test site sequences,
The second process includes the irradiation energy of the test site where the test value in the test site sequence extracted in the third stage of the first process is the maximum value, and the test in the test site sequence extracted in the fourth stage of the first process. When the energy difference from the irradiation energy of the examination site where the value is the maximum value is obtained, it is determined whether or not this energy difference is within a predetermined energy range, and when it is determined that it is out of the range, the crystal film for monitoring 5. The method for inspecting a crystal film according to claim 3 or 4, wherein it is determined that is abnormal. The second step determines whether or not the maximum value of the test value in the test site sequence extracted in the third stage of the first step is within a preset test value range,
5. The method for inspecting a crystal film according to claim 3, wherein when it is determined that the value is out of the range, the crystal film for monitoring is determined to be abnormal. An inspection target crystal film having an irradiation shape of a substantially rectangular shape extending in a predetermined first direction and irradiated with a laser beam for promoting crystal growth of the crystal film being scanned in a second direction orthogonal to the first direction. An inspection device,
Monitor inspection means for inspecting the crystallization state of the crystal film for monitoring, which is scanned in the second direction and irradiated with the laser beam while changing the irradiation energy, at a plurality of inspection sites arranged in the first and second directions;
Condition setting means for setting an inspection condition including at least an inspection part when inspecting the crystal film to be inspected based on the inspection result by the monitor inspection means;
A crystal film inspection apparatus comprising: a target film inspection unit that inspects an inspection target crystal film using an inspection condition set by a condition setting unit. In monitor inspection means,
Obtain the crystallization state of each inspection site as an inspection value that increases as the degree of crystal growth increases,
Each test site is divided into a plurality of test site columns arranged in the first direction with each test site arranged in the second direction as one column, and the test site having the maximum test value is extracted for each test site column And
The crystal film inspection apparatus according to claim 7, further comprising a control unit that extracts an inspection site row having a maximum inspection value with a minimum irradiation energy among the inspection site rows. The control means further includes
Each test site is divided into a plurality of test site rows arranged in the second direction, with each test site arranged in the first direction as one row, and has a test site in which the test value in the test site sequence to be extracted is the maximum value. Extract the inspection part line,
Extract the test site where the test value in this test site line is the maximum and the test site where the test value is the minimum,
9. The crystal film according to claim 8, which has a function of setting each inspection part of the inspection part row having these two inspection parts as an inspection part when inspecting the inspection target crystal film as an inspection condition. Inspection equipment. The control means further includes
With respect to the monitor inspection means, the inspection part sequence where the inspection value becomes the maximum value is extracted with the maximum irradiation energy among the inspection part sequences,
With regard to the condition setting means, the irradiation energy of the examination part where the inspection value in the extracted examination part sequence becomes the maximum value and the irradiation energy of the examination part where the inspection value in the examination part sequence extracted by the monitor inspection means becomes the maximum value And determining whether or not the energy difference is within a predetermined energy range, and determining that the crystal film for monitoring is abnormal when it is determined that the energy difference is out of the range. The crystal film inspection apparatus according to claim 8. The control means further includes
Regarding the condition setting means, when it is determined that the maximum value of the test value in the test site sequence extracted by the monitor test means is within a preset test value range, 9. The crystal film inspection apparatus according to claim 8, which has a function of determining that the monitor crystal film is abnormal.

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