JP2005064419A - Light emitting diode - Google Patents

Light emitting diode Download PDF

Info

Publication number
JP2005064419A
JP2005064419A JP2003296065A JP2003296065A JP2005064419A JP 2005064419 A JP2005064419 A JP 2005064419A JP 2003296065 A JP2003296065 A JP 2003296065A JP 2003296065 A JP2003296065 A JP 2003296065A JP 2005064419 A JP2005064419 A JP 2005064419A
Authority
JP
Japan
Prior art keywords
light emitting
curved surface
semiconductor light
emitting diode
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003296065A
Other languages
Japanese (ja)
Other versions
JP4001082B2 (en
Inventor
Tadaaki Ikeda
忠昭 池田
Kensho Koga
憲昭 古閑
Shinji Tokutomi
眞治 徳富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP2003296065A priority Critical patent/JP4001082B2/en
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to KR1020047017564A priority patent/KR101015289B1/en
Priority to CNB2003801005835A priority patent/CN100356591C/en
Priority to AU2003280708A priority patent/AU2003280708A1/en
Priority to US10/532,813 priority patent/US7347603B2/en
Priority to EP03770119A priority patent/EP1564819B1/en
Priority to PCT/JP2003/014048 priority patent/WO2004042833A1/en
Priority to DE60318611T priority patent/DE60318611T2/en
Priority to TW092130920A priority patent/TWI231611B/en
Publication of JP2005064419A publication Critical patent/JP2005064419A/en
Application granted granted Critical
Publication of JP4001082B2 publication Critical patent/JP4001082B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

Abstract

<P>PROBLEM TO BE SOLVED: To provide a light emitting diode that firmly fixes a resinous package as well as improving brightness by efficiently condensing beams emitted laterally. <P>SOLUTION: In a light emitting diode 1 having a semiconductor light emitting device 3 mounted on a printed-wiring board 2 and a translucent resinous package 4 that covers the semiconductor light emitting device 3, the resinous package 4 has an expansion part 12 having a first curved surface 11 that slowly expands toward the surface, and the printed-wiring board 2 has a recessed part 5 having a second curved surface 7 that slowly expands toward the surface such that the beams emitted laterally from the semiconductor light emitting device 3 are reflected on the surface side. Moreover, the peel strength is improved by increasing the contact area between the resinous package 4 and the printed-wiring board 2, and further, the beams emitted laterally from the semiconductor light emitting device are reflected by the second curved surface as well as by the first curved surface, thus reflecting all the laterally emitted beams toward the surface side. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

本発明は、プリント配線基板上に搭載された半導体発光素子と、半導体発光素子を覆う透光性の樹脂パッケージとを備えた発光ダイオードに関する。   The present invention relates to a light emitting diode including a semiconductor light emitting element mounted on a printed wiring board and a translucent resin package covering the semiconductor light emitting element.

従来、国内の携帯電話はカメラ付きのものが主流となりつつあり、このため、暗い所でも写真撮影可能な小型、薄型かつ高輝度のストロボ光源が求められている。この要求を満たす光源としては発光ダイオード(LED)が最も有力であるが、配光範囲を調整していない発光ダイオードでは輝度が不足していることが多く、この輝度不足を解消するために、半導体発光素子を覆う樹脂パッケージで、レンズを形成することが行われている。   2. Description of the Related Art Conventionally, domestic mobile phones with cameras are becoming mainstream, and for this reason, there is a demand for a compact, thin, high-intensity strobe light source that can take a picture even in a dark place. Light emitting diodes (LEDs) are the most powerful light sources that meet this requirement, but light emitting diodes that do not adjust the light distribution range often have insufficient luminance. A lens is formed with a resin package covering a light emitting element.

例えば、特許文献1に記載したものは、リード部材に搭載された半導体発光素子を樹脂パッケージで覆い、この樹脂パッケージの凸面状に形成した表面に鍍金を施して凹面鏡を形成し、この凹面鏡の表面で光を反射して、裏面側に光を取り出して集光する構造である。   For example, in Patent Document 1, a semiconductor light-emitting element mounted on a lead member is covered with a resin package, and a concave mirror is formed by plating a surface of the resin package formed into a convex shape. In this structure, the light is reflected, and the light is extracted and condensed on the back side.

また、特許文献2に記載したものは、リード部材に搭載された半導体発光素子を樹脂パッケージで覆い、この樹脂パッケージの光取り出し面に凹部と、この凹部の内側に形成した凸レンズ部を形成し、半導体発光素子の正面方向に出射された光を凸レンズ部を介して取り出し、集光させる構造である。   In addition, the device described in Patent Document 2 covers a semiconductor light emitting element mounted on a lead member with a resin package, and forms a concave portion on the light extraction surface of the resin package and a convex lens portion formed inside the concave portion. In this structure, light emitted in the front direction of the semiconductor light emitting element is extracted through a convex lens portion and condensed.

また、特許文献3に記載したものは、基板の表面に発光ダイオードと、合成樹脂材からなる透明部を有し、透明部によって、発光ダイオードの放光を全反射する構造である。
特開平1−273367号公報 (第1−4頁、第3図) 特開平8−306959号公報 (第2−3頁、第2図) 実開昭52−7580号公報 (第1−8頁、第6図)
Further, what is described in Patent Document 3 has a structure in which a light emitting diode and a transparent portion made of a synthetic resin material are provided on the surface of a substrate, and the light emitted from the light emitting diode is totally reflected by the transparent portion.
JP-A-1-273367 (page 1-4, FIG. 3) JP-A-8-306959 (page 2-3, FIG. 2) Japanese Utility Model Publication No. 52-7580 (1-8 pages, Fig. 6)

しかしながら、特許文献1に記載した発光ダイオードは、凹面鏡で反射させた光が半導体発光素子およびこれを支持するリード部材に当たり遮断されるため、均一な発光ができないとともに、発光効率が悪くなる。特に、直径を小さくすると発光面積に対する遮断面積の割合が相対的に大きくなるので、小型化に対応できないという問題がある。   However, since the light-emitting diode described in Patent Document 1 is blocked by the light reflected by the concave mirror hitting the semiconductor light-emitting element and the lead member that supports the semiconductor light-emitting element, the light-emitting diode cannot perform uniform light emission and the light emission efficiency deteriorates. In particular, when the diameter is reduced, the ratio of the blocking area to the light emitting area is relatively increased, and thus there is a problem that it is not possible to cope with downsizing.

また、特許文献2に記載した発光ダイオードは、半導体発光素子から側方に出射された光は、樹脂パッケージの側面からそのまま外側に出てしまうため、無駄が多く、輝度向上の効率が悪い。   Further, in the light emitting diode described in Patent Document 2, light emitted from the semiconductor light emitting device to the side is emitted to the outside as it is from the side surface of the resin package.

また、特許文献3に記載した発光ダイオードは、基板上の透明部が、発光ダイオードの放光を全反射させるように形成されているので、透明部の先部が基部よりも大きくなり、基部が基板から剥離しやすくなるという問題がある。   Moreover, since the transparent part on a board | substrate is formed so that the light emission of the light emitting diode may be totally reflected in the light emitting diode described in patent document 3, the front part of the transparent part becomes larger than the base part, and the base part is There is a problem that it is easy to peel off from the substrate.

そこで本発明は、側方に出射された光を無駄なく集光して輝度を向上させるとともに、樹脂パッケージを強固に固定した発光ダイオードを提供することを目的とする。   Accordingly, an object of the present invention is to provide a light emitting diode in which light emitted to the side is condensed without waste to improve luminance and a resin package is firmly fixed.

本発明の発光ダイオードにおいては、樹脂パッケージに、半導体発光素子から側方に出射された光を表側に全反射させるように表側に向かって徐々に拡形した第1の曲面を有する拡形部を設け、プリント配線基板に、半導体発光素子から側方に出射された光を表側に反射させるように表側に向かって徐々に拡形した第2の曲面を有する凹部を設けたものである。   In the light emitting diode of the present invention, the resin package includes a widened portion having a first curved surface that is gradually widened toward the front side so that the light emitted from the semiconductor light emitting element sideways is totally reflected to the front side. Provided on the printed wiring board is a recess having a second curved surface that gradually expands toward the front side so that the light emitted from the semiconductor light emitting element to the side is reflected to the front side.

この発明によれば、側方に出射された光を無駄なく集光して輝度を向上させるとともに、樹脂パッケージを強固に固定した発光ダイオードが得られる。   According to the present invention, it is possible to obtain a light emitting diode in which the light emitted to the side is condensed without waste to improve luminance and the resin package is firmly fixed.

以上のように本発明によれば、樹脂パッケージに、光を全反射させる第1の曲面を有する拡形部を設け、プリント配線基板に、光を反射させる第2の曲面を有する凹部を設けたので、基板に形成した凹部によって、樹脂パッケージと、基板との接触面の形状を平面に比べて複雑にするとともに接触面積を増やし、剥離強度を向上させて樹脂パッケージを強固に固定することができ、また、半導体発光素子から側方に出射された光を第1の曲面とともに第2の曲面で反射させて、側方に出射された光を無駄なく集光して輝度を向上させることができる。   As described above, according to the present invention, the resin package is provided with the enlarged portion having the first curved surface that totally reflects light, and the printed wiring board is provided with the concave portion having the second curved surface that reflects light. Therefore, the concave portion formed in the substrate can make the shape of the contact surface between the resin package and the substrate more complex than the flat surface, increase the contact area, improve the peel strength, and firmly fix the resin package. In addition, the light emitted from the semiconductor light emitting device to the side can be reflected by the second curved surface together with the first curved surface, and the light emitted from the side can be condensed without waste to improve the luminance. .

また、第1の曲面の基端を、第2の曲面の表側端部に接続すると、樹脂パッケージの表側に出射される光のうち、第1の曲面で反射した光と、第2の曲面で反射した光との境界を小さくして、輝度の低下を小さくすることができる。   Moreover, when the base end of the first curved surface is connected to the front side end of the second curved surface, the light reflected by the first curved surface and the second curved surface out of the light emitted to the front side of the resin package By reducing the boundary with the reflected light, the reduction in luminance can be reduced.

また、半導体発光素子を、プリント配線基板にサブマウント素子を介して搭載すると、半導体発光素子の発光面を表側に移動させて、半導体発光素子から第1の曲面に入射する光を増加させ、輝度を向上させることができる。   In addition, when the semiconductor light emitting element is mounted on the printed wiring board via the submount element, the light emitting surface of the semiconductor light emitting element is moved to the front side, and the light incident on the first curved surface is increased from the semiconductor light emitting element. Can be improved.

また、第1の曲面および前記第2の曲面を、回転放物面とすると、第1の曲面に入射する光を表面側に全反射させるとともに、第2の曲面に入射する光を表面側に反射させて、凹部の外側に光が出射されることを防止し、半導体発光素子が出射したすべての光を表面側に出射させて、輝度を向上させることができる。   Further, when the first curved surface and the second curved surface are rotational paraboloids, the light incident on the first curved surface is totally reflected on the surface side, and the light incident on the second curved surface is directed on the surface side. The light can be reflected to prevent the light from being emitted to the outside of the concave portion, and all the light emitted from the semiconductor light emitting element can be emitted to the surface side to improve the luminance.

また、第2の曲面を、電極と同じ材料の金属を被覆して形成すると、電極と反射面を兼用させ、光の反射率と製造効率を向上させることができる。   In addition, when the second curved surface is formed by covering the same metal as the electrode, the electrode and the reflecting surface can be used together to improve the light reflectance and the manufacturing efficiency.

請求項1に記載の発明は、プリント配線基板に搭載された半導体発光素子と、前記半導体発光素子を覆う透光性の樹脂パッケージとを備えた発光ダイオードにおいて、前記樹脂パッケージは、前記半導体発光素子から側方に出射された光を表側に全反射させるように表側に向かって徐々に拡形した第1の曲面を有する拡形部を備え、前記プリント配線基板は、前記半導体発光素子から側方に出射された光を表側に反射させるように表側に向かって徐々に拡形した第2の曲面を有する凹部を備えていることを特徴とする発光ダイオードとしたものであり、基板に形成した凹部によって、樹脂パッケージと、基板との接触面の形状を平面に比べて複雑にするとともに接触面積を増やし、剥離強度を向上させ、また、半導体発光素子から側方に出射された光を第1の曲面とともに第2の曲面で反射させて、側方に出射される光を全て表側に反射させるという作用を有する。   The invention according to claim 1 is a light emitting diode comprising a semiconductor light emitting element mounted on a printed wiring board and a translucent resin package covering the semiconductor light emitting element, wherein the resin package is the semiconductor light emitting element. A widened portion having a first curved surface gradually widened toward the front side so as to totally reflect light emitted sideways from the front side, and the printed wiring board is laterally extended from the semiconductor light emitting element. A light emitting diode comprising a concave portion having a second curved surface that gradually expands toward the front side so as to reflect the light emitted to the front side. Makes the shape of the contact surface between the resin package and the substrate more complex than a flat surface, increases the contact area, improves the peel strength, and emits from the semiconductor light emitting element to the side The light in conjunction with the first curved surface is reflected by the second curved surface has the effect that reflects all the front light emitted laterally.

請求項2に記載の発明は、前記第1の曲面の基端は、前記第2の曲面の表側端部に接続されていることを特徴とする請求項1に記載の発光ダイオードとしたものであり、樹脂パッケージの表側に出射される光のうち、第1の曲面で反射した光と、第2の曲面で反射した光との境界を小さくするという作用を有する。   The invention according to claim 2 is the light emitting diode according to claim 1, wherein a base end of the first curved surface is connected to a front side end of the second curved surface. In addition, of the light emitted to the front side of the resin package, the boundary between the light reflected by the first curved surface and the light reflected by the second curved surface is reduced.

請求項3に記載の発明は、前記半導体発光素子は、前記プリント配線基板にサブマウント素子を介して搭載されていることを特徴とする請求項1または2に記載の発光ダイオードとしたものであり、半導体発光素子の発光面を表側に移動させて、半導体発光素子から第1の曲面に入射する光を増加させるという作用を有する。   The invention according to claim 3 is the light emitting diode according to claim 1 or 2, wherein the semiconductor light emitting element is mounted on the printed wiring board via a submount element. The light emitting surface of the semiconductor light emitting element is moved to the front side to increase the amount of light incident on the first curved surface from the semiconductor light emitting element.

請求項4に記載の発明は、前記第1の曲面および前記第2の曲面は、回転放物面であることを特徴とする請求項1から3のいずれかの項に記載の発光ダイオードとしたものであり、半導体発光素子から第1の曲面に入射する光を表面側に全反射させるとともに、第2の曲面に入射する光が凹部の外側に逃げることを防止し、半導体発光素子が出射したすべての光を表面側に出射させるという作用を有する。   The invention according to claim 4 is the light emitting diode according to any one of claims 1 to 3, wherein the first curved surface and the second curved surface are rotational paraboloids. The light incident on the first curved surface from the semiconductor light emitting element is totally reflected to the surface side, and the light incident on the second curved surface is prevented from escaping outside the recess, and the semiconductor light emitting element is emitted. It has the effect of emitting all light to the surface side.

請求項5に記載の発明は、前記第2の曲面は、電極と同じ材料の金属を被覆して形成されていることを特徴とする請求項1から4のいずれかの項に記載の発光ダイオードとしたものであり、電極と反射面を兼用させ、光の反射率と製造効率とを向上させるという作用を有する。   The invention according to claim 5 is characterized in that the second curved surface is formed by coating a metal of the same material as that of the electrode. The light emitting diode according to any one of claims 1 to 4 It has the effect of improving the light reflectance and manufacturing efficiency by combining the electrode and the reflective surface.

以下、本発明の実施の形態について、図1、図2を用いて説明する。   Hereinafter, embodiments of the present invention will be described with reference to FIGS.

(第1の実施の形態)
図1(A)は第1の実施の形態の発光ダイオードの平面図、(B)は同発光ダイオードの側断面図を示す。
(First embodiment)
FIG. 1A is a plan view of the light emitting diode according to the first embodiment, and FIG. 1B is a side sectional view of the light emitting diode.

図1に示すように、発光ダイオード1は、プリント配線基板2に搭載された半導体発光素子3と、半導体発光素子3を覆う透光性の樹脂パッケージ4とを備えている。   As shown in FIG. 1, the light emitting diode 1 includes a semiconductor light emitting element 3 mounted on a printed wiring board 2 and a translucent resin package 4 that covers the semiconductor light emitting element 3.

プリント配線基板2は、矩形に形成され、両端部に電極パターン8,9を形成している。   The printed wiring board 2 is formed in a rectangular shape, and electrode patterns 8 and 9 are formed on both ends.

プリント配線基板2の表面には、非貫通の凹部5が形成されている。凹部5は、円形の底面6と、底面6の周囲に形成された回転放物面である曲面7とを有している。回転放物面の中心線は、底面6の中心を通過し、プリント配線基板2の法線方向に平行に配置されている。凹部5の底面6および曲面7には、例えば、酸化チタン等の反射材を含有した絶縁性の白色塗料(反射性塗料)が塗布されている。   A non-penetrating recess 5 is formed on the surface of the printed wiring board 2. The recess 5 has a circular bottom surface 6 and a curved surface 7 that is a rotating paraboloid formed around the bottom surface 6. The center line of the paraboloid of revolution passes through the center of the bottom surface 6 and is arranged in parallel to the normal direction of the printed wiring board 2. An insulating white paint (reflective paint) containing a reflective material such as titanium oxide is applied to the bottom surface 6 and the curved surface 7 of the recess 5.

プリント配線基板2の電極パターン8,9は、プリント配線基板2の両端部から凹部5内に伸びてプリント配線基板2の長手方向の両側に対向配置されている。電極パターン8,9は、CuのエッチングパターンにNi/Auめっき処理を行ったもので、ワイヤボンディング性と表面実装時のリフローはんだ付け性の両立が図られている。   The electrode patterns 8 and 9 of the printed wiring board 2 extend from both ends of the printed wiring board 2 into the recess 5 and are opposed to both sides in the longitudinal direction of the printed wiring board 2. The electrode patterns 8 and 9 are obtained by performing an Ni / Au plating process on an etching pattern of Cu, and both wire bonding property and reflow soldering property at the time of surface mounting are achieved.

半導体発光素子3は、プリント配線基板2の電極パターン8上にサブマウント素子10を介してダイボンディングにより接続されている。詳しくは、半導体発光素子3は、底面6の中心に配置されており、サブマウント素子10のワイヤボンディング領域は、半導体発光素子3の一側に配置されている。   The semiconductor light emitting element 3 is connected to the electrode pattern 8 of the printed wiring board 2 via the submount element 10 by die bonding. Specifically, the semiconductor light emitting element 3 is disposed at the center of the bottom surface 6, and the wire bonding region of the submount element 10 is disposed on one side of the semiconductor light emitting element 3.

電極パターン9は、半導体発光素子3を挟んで、サブマウント素子10のワイヤボンディング領域の反対側に配置されており、ワイヤは、半導体発光素子3の表側を通過して、電極パターン9とサブマウント素子10とを接続している。   The electrode pattern 9 is disposed on the opposite side of the wire bonding region of the submount element 10 with the semiconductor light emitting element 3 interposed therebetween, and the wire passes through the front side of the semiconductor light emitting element 3 and is connected to the electrode pattern 9 and the submount. The element 10 is connected.

なお、表側とは、プリント配線基板2の凹部5が設けられた方向をいう。   The front side refers to the direction in which the concave portion 5 of the printed wiring board 2 is provided.

ワイヤは細いので、半導体発光素子3から出射される光を全て邪魔するわけではなく、大部分の光は、半導体発光素子3から出射することができる。なお、図1(A)に二点鎖線および斜線で示すように、電極パターン9を底面6上のサブマウント素子のワイヤボンディング領域に隣接する位置まで延長して形成し、ワイヤをこの延長部分に接続すると、半導体発光素子3から出射される光が邪魔されなくなり、半導体発光素子3から表側に出射される光を増加させることができる。   Since the wire is thin, it does not disturb all the light emitted from the semiconductor light emitting element 3, and most of the light can be emitted from the semiconductor light emitting element 3. 1A, the electrode pattern 9 is formed to extend to a position adjacent to the wire bonding region of the submount element on the bottom surface 6 as indicated by a two-dot chain line and a hatched line, and the wire is formed on the extended portion. When connected, the light emitted from the semiconductor light emitting element 3 is not obstructed, and the light emitted from the semiconductor light emitting element 3 to the front side can be increased.

半導体発光素子3をプリント配線基板2の凹部5内に配置しているので、半導体発光素子3から出射された光が、プリント配線基板2の裏面側に漏れることを防止できる。   Since the semiconductor light emitting element 3 is disposed in the recess 5 of the printed wiring board 2, it is possible to prevent light emitted from the semiconductor light emitting element 3 from leaking to the back side of the printed wiring board 2.

樹脂パッケージ4は、例えば透明エポキシ等の樹脂からなり、プリント配線基板2の凹部5内で半導体発光素子3の全体および電極パターン8,9の一部を覆って固化した基部と、プリント配線基板2の表面よりも表側に突出して配置され、半導体発光素子3から側方に出射された光を表側に全反射させるように表側に向かって徐々に拡形した曲面11を有する拡形部12とを備えている。   The resin package 4 is made of, for example, a resin such as transparent epoxy, and a base portion that covers and solidifies the entire semiconductor light emitting element 3 and part of the electrode patterns 8 and 9 in the recess 5 of the printed wiring board 2, and the printed wiring board 2. An enlarged portion 12 having a curved surface 11 which is disposed so as to protrude from the surface to the front side and gradually expands toward the front side so as to totally reflect light emitted from the semiconductor light emitting element 3 to the front side. I have.

曲面11は、回転放物面である第1の曲面を形成し、プリント配線基板2の凹部5に形成された曲面7は、第2の曲面を形成している。曲面11の基端は、曲面7の表側端部に接続されている。   The curved surface 11 forms a first curved surface that is a paraboloid of revolution, and the curved surface 7 formed in the concave portion 5 of the printed wiring board 2 forms a second curved surface. The base end of the curved surface 11 is connected to the front end of the curved surface 7.

樹脂パッケージ4の表面の外周部には、半導体発光素子3の光軸に直交する環状平面部13が形成され、環状平面部13の内側には配光範囲を調整する調整用凹部14が形成され、さらに調整用凹部14内には、半導体発光素子3の光軸と同じ光軸を有する凸レンズ部15が形成されている。   An annular flat surface portion 13 orthogonal to the optical axis of the semiconductor light emitting element 3 is formed on the outer peripheral portion of the surface of the resin package 4, and an adjustment concave portion 14 for adjusting a light distribution range is formed inside the annular flat surface portion 13. Further, a convex lens portion 15 having the same optical axis as the optical axis of the semiconductor light emitting element 3 is formed in the adjustment concave portion 14.

凸レンズ部15の先端部には、円状平面部16が形成され、この円状平面部16は、環状平面部13と同じ平面上に配置されている。すなわち、凸レンズ部15は、調整用凹部14から突出しない状態で設けられている。また、円状平面部16は、正面から見たときに、矩形の半導体発光素子3の全周が含まれる大きさに形成されている。調整用凹部14は、凸レンズ部15の外周縁と、環状平面部13の内周縁を接続する凹状曲面部17とを有している。   A circular flat surface portion 16 is formed at the tip of the convex lens portion 15, and the circular flat surface portion 16 is disposed on the same plane as the annular flat surface portion 13. That is, the convex lens portion 15 is provided in a state where it does not protrude from the adjustment concave portion 14. Further, the circular flat portion 16 is formed in a size that includes the entire circumference of the rectangular semiconductor light emitting element 3 when viewed from the front. The adjustment concave portion 14 has an outer peripheral edge of the convex lens portion 15 and a concave curved surface portion 17 connecting the inner peripheral edge of the annular flat surface portion 13.

次に、発光ダイオード1の製造方法について説明する。   Next, a method for manufacturing the light emitting diode 1 will be described.

まず、プリント配線基板2の表面を、曲面7の形状に合わせたビットで切削し、次にめっきやエッチング処理等により電極パターン8,9を形成する。そして、凹部5の底面6および曲面7に絶縁性の白色塗料を塗布する。   First, the surface of the printed wiring board 2 is cut with a bit matched to the shape of the curved surface 7, and then electrode patterns 8 and 9 are formed by plating, etching, or the like. Then, an insulating white paint is applied to the bottom surface 6 and the curved surface 7 of the recess 5.

次いで、電極パターン8,9に半導体発光素子3を搭載するが、この手順については、従来の発光ダイオードの製造手順と同じであるため、説明を省略する。   Next, the semiconductor light emitting element 3 is mounted on the electrode patterns 8 and 9, but this procedure is the same as the conventional light emitting diode manufacturing procedure, and thus the description thereof is omitted.

樹脂パッケージ4の製造には、トランスファーモールド用金型を使用する。この場合、プリント配線基板2の表側および裏側に移動可能な対となる金型と、曲面11を成型するために両側方にスライド移動する金型とを使用する。スライド金型を用いることにより、曲面11が裏面側に突出している形状でも製造を行うことができる。   For the production of the resin package 4, a transfer mold is used. In this case, a pair of molds that can move to the front side and the back side of the printed wiring board 2 and a mold that slides to both sides to form the curved surface 11 are used. By using a slide mold, it is possible to manufacture even in a shape in which the curved surface 11 protrudes on the back surface side.

次に、発光ダイオード1の使用状態について説明する。   Next, the usage state of the light emitting diode 1 will be described.

発光ダイオード1は、面実装型の装置として使用できる。半導体発光素子3から光軸方向に出射された光のうちの一部は、円状平面部16から外側に出射され、そのまま直進する。また、凸レンズ部15の周面に当たった光は、光軸方向の表側に屈折して、凸レンズ部15から外側に出射される。なお、凸レンズ部15および凹状曲面部17は、凸レンズ部15から外側に出射された光が凹状曲面部17に再び入射しないように形成されている。   The light emitting diode 1 can be used as a surface mount type device. A part of the light emitted from the semiconductor light emitting element 3 in the optical axis direction is emitted to the outside from the circular flat portion 16 and goes straight. Further, the light hitting the peripheral surface of the convex lens portion 15 is refracted to the front side in the optical axis direction and is emitted from the convex lens portion 15 to the outside. The convex lens portion 15 and the concave curved surface portion 17 are formed so that the light emitted outward from the convex lens portion 15 does not enter the concave curved surface portion 17 again.

半導体発光素子3から側方に出射された光は、曲面7または曲面11に当たるが、曲面7および曲面11は回転放物面で、半導体発光素子3から出射された光の曲面7および曲面11への入射角はほとんど40°以上となるように設計されている。   Light emitted laterally from the semiconductor light emitting element 3 hits the curved surface 7 or the curved surface 11, but the curved surface 7 and the curved surface 11 are paraboloids, and the curved surface 7 and the curved surface 11 of the light emitted from the semiconductor light emitting element 3. The incident angle is designed to be almost 40 ° or more.

このように設計したのは、パッケージ樹脂の屈折率が1.55の場合に全反射角が40°となるためであり、樹脂の材質を変更した場合には、その全反射角に合わせて設計角度を変更することができる。これにより、曲面へ入射した光はほとんど全て曲面7および曲面11で全反射されて、光軸方向の表側へ出射される。   The reason for this design is that the total reflection angle is 40 ° when the refractive index of the package resin is 1.55. If the resin material is changed, the total reflection angle is designed according to the total reflection angle. The angle can be changed. Thereby, almost all the light incident on the curved surface is totally reflected by the curved surface 7 and the curved surface 11 and is emitted to the front side in the optical axis direction.

光を他の部材に当てて反射させると、界面で乱反射した光が他の部材に吸収され、反射効率が悪くなるので、樹脂の表面で全反射させて反射させた方が効率がよい。一方で、樹脂の表面に対する光の入射角が小さくなると、光が外側に透過してしまい、反射効率は極端に低下してしまう。   When light is applied to another member and reflected, the light diffusely reflected at the interface is absorbed by the other member and the reflection efficiency is deteriorated. Therefore, it is more efficient that the light is totally reflected and reflected by the surface of the resin. On the other hand, when the incident angle of light with respect to the surface of the resin is reduced, the light is transmitted to the outside, and the reflection efficiency is extremely lowered.

本実施の形態においては、2種類の曲面7、11を設けたので、半導体発光素子3から曲面11へ入射する光は、曲面7に入射する光より大きな入射角で入射するので、効率よく全反射される。また、半導体発光素子3から斜め後方に出射され、曲面7に入射する光は、40°未満の小さな入射角になるが、曲面7は、プリント配線基板2に形成されているので、光が曲面7から外側に出ることはなく、効率よく反射される。また、半導体発光素子3から、より後方に出射された光は、底面6や電極パターン8,9の表面で表側に反射される。   In the present embodiment, since two types of curved surfaces 7 and 11 are provided, the light incident on the curved surface 11 from the semiconductor light emitting element 3 is incident at a larger incident angle than the light incident on the curved surface 7, so that Reflected. Further, light emitted obliquely backward from the semiconductor light emitting element 3 and incident on the curved surface 7 has a small incident angle of less than 40 °. However, since the curved surface 7 is formed on the printed wiring board 2, the light is curved. It does not go out from 7 and is reflected efficiently. Further, light emitted more backward from the semiconductor light emitting element 3 is reflected to the front side by the bottom surface 6 and the surfaces of the electrode patterns 8 and 9.

また、本実施の形態においては、凹部5の底面6にサブマウント素子10を介して半導体発光素子3を搭載したので、半導体発光素子3の発光面が表側に移動し、曲面11に入射する光量が多くなり、より効率よく光を反射することができる。   In the present embodiment, since the semiconductor light emitting element 3 is mounted on the bottom surface 6 of the recess 5 via the submount element 10, the light emitting surface of the semiconductor light emitting element 3 moves to the front side and enters the curved surface 11. And the light can be reflected more efficiently.

また、樹脂パッケージ4の基部が凹部5に嵌入して形成されているので、樹脂パッケージを基板上に平面状に形成した場合より剥離強度を増加させることができる。   Further, since the base portion of the resin package 4 is formed by being fitted into the recess 5, the peel strength can be increased as compared with the case where the resin package is formed in a planar shape on the substrate.

(第2の実施の形態)
図2(A)は第2の実施の形態の発光ダイオードの樹脂パッケージを形成する前の平面図、(B)は同発光ダイオードの樹脂パッケージを形成する前の側断面図である。
(Second Embodiment)
FIG. 2A is a plan view before forming the resin package of the light emitting diode of the second embodiment, and FIG. 2B is a side sectional view before forming the resin package of the light emitting diode.

第2の実施の形態の発光ダイオード18は、第1の実施の形態の発光ダイオードとは電極パターンの構成とワイヤの配置が異なるだけで、他の部分の構成は同じなので、説明は省略する。   The light-emitting diode 18 according to the second embodiment is different from the light-emitting diode according to the first embodiment only in the configuration of the electrode pattern and the arrangement of the wires, and the configuration of the other parts is the same.

発光ダイオード18は、プリント配線基板19の凹部20に形成した曲面(第2の曲面)に、電極パターン21,22と同じ材料の金属を被覆して反射面23を形成したものである。   In the light emitting diode 18, a reflective surface 23 is formed by covering a curved surface (second curved surface) formed in the concave portion 20 of the printed wiring board 19 with a metal of the same material as the electrode patterns 21 and 22.

電極パターン21は、プリント配線基板19の一端部を覆い、凹部20内の曲面の略半周を覆い、さらに凹部20内の底面24の略半分を覆って形成されている。また、電極パターン22は、プリント配線基板19の他端部を覆い、凹部20内の曲面の略半周を覆い、さらに凹部20内の底面24の略半分を覆って形成されている。凹部20内の電極パターン21,22は、短絡しない程度の少しの隙間をあけて形成されている。   The electrode pattern 21 covers one end of the printed wiring board 19, covers a substantially half circumference of the curved surface in the recess 20, and further covers a substantially half of the bottom surface 24 in the recess 20. The electrode pattern 22 covers the other end of the printed wiring board 19, covers a substantially half circumference of the curved surface in the recess 20, and covers a substantially half of the bottom surface 24 in the recess 20. The electrode patterns 21 and 22 in the recess 20 are formed with a slight gap that does not cause a short circuit.

半導体発光素子3は、サブマウント素子10上に搭載され、サブマウント素子10は、電極パターン21にダイボンディングにより接続され、電極パターン22にワイヤボンディングにより接続されている。ワイヤは、サブマウント素子10のワイヤボンディング領域に隣接する位置に接続され、半導体発光素子3から表側に出射される光を邪魔しないように配置されている。   The semiconductor light emitting element 3 is mounted on the submount element 10, and the submount element 10 is connected to the electrode pattern 21 by die bonding and connected to the electrode pattern 22 by wire bonding. The wires are connected to positions adjacent to the wire bonding region of the submount element 10 and are arranged so as not to interfere with the light emitted from the semiconductor light emitting element 3 to the front side.

本発明の発光ダイオードは基板に形成した凹部によって、樹脂パッケージと、基板との接触面の形状を平面に比べて複雑にするとともに接触面積を増やし、剥離強度を向上させて樹脂パッケージを強固に固定することができ、また、半導体発光素子から側方に出射された光を第1の曲面とともに第2の曲面で反射させて、側方に出射された光を無駄なく集光して輝度を向上させることができ、リードフレーム上に搭載された半導体発光素子と、半導体発光素子を覆う透光性の樹脂パッケージとを備えた発光ダイオードとして有用である。   The light emitting diode of the present invention has a concave portion formed on the substrate, which makes the shape of the contact surface between the resin package and the substrate more complex than a flat surface, increases the contact area, improves the peel strength, and firmly fixes the resin package. In addition, the light emitted laterally from the semiconductor light emitting element is reflected by the second curved surface together with the first curved surface, thereby concentrating the light emitted laterally without waste and improving the luminance. It is useful as a light emitting diode comprising a semiconductor light emitting element mounted on a lead frame and a translucent resin package covering the semiconductor light emitting element.

(A)は第1の実施の形態の発光ダイオードの平面図、(B)は同発光ダイオードの側断面図(A) is a top view of the light emitting diode of 1st Embodiment, (B) is a sectional side view of the light emitting diode. (A)は第2の実施の形態の発光ダイオードの樹脂パッケージを形成する前の平面図、(B)は同発光ダイオードの樹脂パッケージを形成する前の側断面図(A) is a plan view before forming the resin package of the light emitting diode of the second embodiment, (B) is a side sectional view before forming the resin package of the light emitting diode

符号の説明Explanation of symbols

1 発光ダイオード
2 プリント配線基板
3 半導体発光素子
4 樹脂パッケージ
5 凹部
6 底面
7 曲面
8 電極パターン
9 電極パターン
10 サブマウント素子
11 曲面
12 拡形部
13 環状平面部
14 調整用凹部
15 凸レンズ部
16 円状平面部
17 凹状曲面部
18 発光ダイオード
19 プリント配線基板
20 凹部
21 電極パターン
22 電極パターン
23 反射面
24 底面
DESCRIPTION OF SYMBOLS 1 Light emitting diode 2 Printed wiring board 3 Semiconductor light emitting element 4 Resin package 5 Recessed part 6 Bottom surface 7 Curved surface 8 Electrode pattern 9 Electrode pattern 10 Submount element 11 Curved surface 12 Enlarged part 13 Annular plane part 14 Adjustment recessed part 15 Convex lens part 16 Circular shape Planar portion 17 Concave curved surface portion 18 Light emitting diode 19 Printed wiring board 20 Recessed portion 21 Electrode pattern 22 Electrode pattern 23 Reflecting surface 24 Bottom surface

Claims (5)

プリント配線基板に搭載された半導体発光素子と、前記半導体発光素子を覆う透光性の樹脂パッケージとを備えた発光ダイオードにおいて、
前記樹脂パッケージは、前記半導体発光素子から側方に出射された光を表側に全反射させるように表側に向かって徐々に拡形した第1の曲面を有する拡形部を備え、
前記プリント配線基板は、前記半導体発光素子から側方に出射された光を表側に反射させるように表側に向かって徐々に拡形した第2の曲面を有する凹部を備えていることを特徴とする発光ダイオード。
In a light emitting diode comprising a semiconductor light emitting element mounted on a printed wiring board, and a translucent resin package covering the semiconductor light emitting element,
The resin package includes a widened portion having a first curved surface gradually widened toward the front side so as to totally reflect light emitted from the semiconductor light emitting element sideways to the front side,
The printed wiring board includes a recess having a second curved surface that gradually expands toward the front side so as to reflect light emitted from the semiconductor light emitting element to the side to the front side. Light emitting diode.
前記第1の曲面の基端は、前記第2の曲面の表側端部に接続されていることを特徴とする請求項1に記載の発光ダイオード。 2. The light emitting diode according to claim 1, wherein a base end of the first curved surface is connected to a front side end portion of the second curved surface. 前記半導体発光素子は、前記プリント配線基板にサブマウント素子を介して搭載されていることを特徴とする請求項1または2に記載の発光ダイオード。 The light emitting diode according to claim 1 or 2, wherein the semiconductor light emitting element is mounted on the printed wiring board via a submount element. 前記第1の曲面および前記第2の曲面は、回転放物面であることを特徴とする請求項1から3のいずれかの項に記載の発光ダイオード。 The light emitting diode according to any one of claims 1 to 3, wherein the first curved surface and the second curved surface are paraboloids. 前記第2の曲面は、電極と同じ材料の金属を被覆して形成されていることを特徴とする請求項1から4のいずれかの項に記載の発光ダイオード。 5. The light-emitting diode according to claim 1, wherein the second curved surface is formed by coating a metal made of the same material as that of the electrode.
JP2003296065A 2002-11-05 2003-08-20 Light emitting diode Expired - Fee Related JP4001082B2 (en)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2003296065A JP4001082B2 (en) 2003-08-20 2003-08-20 Light emitting diode
CNB2003801005835A CN100356591C (en) 2002-11-05 2003-11-04 A light-emitting diode
AU2003280708A AU2003280708A1 (en) 2002-11-05 2003-11-04 Light-emitting diode
US10/532,813 US7347603B2 (en) 2002-11-05 2003-11-04 Light-emitting diode
KR1020047017564A KR101015289B1 (en) 2002-11-05 2003-11-04 Light-emitting diode
EP03770119A EP1564819B1 (en) 2002-11-05 2003-11-04 Light emitting diode
PCT/JP2003/014048 WO2004042833A1 (en) 2002-11-05 2003-11-04 Light-emitting diode
DE60318611T DE60318611T2 (en) 2002-11-05 2003-11-04 Light emitting diode
TW092130920A TWI231611B (en) 2002-11-05 2003-11-05 Light-emitting diode

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003296065A JP4001082B2 (en) 2003-08-20 2003-08-20 Light emitting diode

Publications (2)

Publication Number Publication Date
JP2005064419A true JP2005064419A (en) 2005-03-10
JP4001082B2 JP4001082B2 (en) 2007-10-31

Family

ID=34372095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003296065A Expired - Fee Related JP4001082B2 (en) 2002-11-05 2003-08-20 Light emitting diode

Country Status (1)

Country Link
JP (1) JP4001082B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311644A (en) * 2007-06-12 2008-12-25 Hectotek Corp Base unit of light emitting diode package
JP2009164567A (en) * 2007-12-13 2009-07-23 Panasonic Electric Works Co Ltd Light emitting device
JP2012178598A (en) * 2012-05-14 2012-09-13 Nichia Chem Ind Ltd Light emitting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008311644A (en) * 2007-06-12 2008-12-25 Hectotek Corp Base unit of light emitting diode package
JP2009164567A (en) * 2007-12-13 2009-07-23 Panasonic Electric Works Co Ltd Light emitting device
JP2012178598A (en) * 2012-05-14 2012-09-13 Nichia Chem Ind Ltd Light emitting device

Also Published As

Publication number Publication date
JP4001082B2 (en) 2007-10-31

Similar Documents

Publication Publication Date Title
KR101015289B1 (en) Light-emitting diode
JP3753011B2 (en) Reflective light emitting diode
US7717587B2 (en) Light source device
US8963188B2 (en) Light emitting diode package and method of manufacturing the same
US7230280B2 (en) Collimating light from an LED device
US20110241028A1 (en) Light emitting device and light unit having the same
JP2004281605A (en) Led package
JP2007184319A (en) Semiconductor light emitting device
TW200425547A (en) Led lamp
JP2004363210A (en) Optical semiconductor device
JP2008205410A (en) Led device and illumination device provided with the same
JP3791872B2 (en) Linear lighting device
JP2005175048A (en) Semiconductor light emitting device
US20190097105A1 (en) Light emitting diode element apparatus and manufacturing method thereof
JP2005285899A (en) Package structure of light emitting diode
JP2001111115A (en) Semiconductor light emitting device
JP3988703B2 (en) Light emitting diode
JP4001082B2 (en) Light emitting diode
JP2007081063A (en) Light-emitting device
JP2006190961A (en) Light emitting diode package and manufacturing process therefor
JP4679917B2 (en) Semiconductor light emitting device
JP2012119340A (en) Light source unit
US20100039825A1 (en) Led
JP3938116B2 (en) Light emitting diode
JP2008108942A (en) Light source device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20051201

RD01 Notification of change of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7421

Effective date: 20060112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070306

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070426

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20070529

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070607

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20070724

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20070806

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100824

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100824

Year of fee payment: 3

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110824

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110824

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120824

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130824

Year of fee payment: 6

LAPS Cancellation because of no payment of annual fees