JP2005063986A - Processing device and plasma device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve the problems wherein processing is carried out using high-density plasma or light having high irradiance or high energy in recent years, and the plasma or light reaches an O ring penetrating through a gap, in the joined part of a hermetically sealed unit which is kept hermetic using the O ring to spoil the O ring or to react on active seeds, such as oxygen active seeds or the like. <P>SOLUTION: A plasma blocking means 12 formed of conductive and shape-memory member is provided to the processing chamber 1 side (inside) of the O ring 4 so as to restrain active seeds produced from plasma and processing gas from reaching the O ring 4, impurities are prevented from being discharged out or the O ring 4 is protected against deterioration, and a substrate 9 to be processed is protected against contamination. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a processing apparatus and a plasma apparatus that perform plasma processing, processing with a photoactivated gas, and the like in an airtight container.
[0002]
[Prior art]
In general, in order to manufacture a semiconductor device, film formation or etching is performed by plasma processing in vacuum using, for example, a plasma CVD (Chemical Vapor Deposition) apparatus, a sputtering apparatus, an etching apparatus, or the like. This vacuum is created by an airtight processing chamber provided with an exhaust system. This processing chamber is formed in a box shape using, for example, aluminum or stainless steel, and inside thereof is a gas introduction system for introducing an electrode for plasma generation, a process gas, or the like, and it is carried in or out from the outside. There are provided a delivery mechanism and the like for delivery to and from a semiconductor substrate (wafer) and a transfer system for a display device substrate. The processing chamber is provided with a plurality of openings such as a gate for a transfer system and a port for connecting an exhaust system.
[0003]
When each component is attached to each of these openings, it is attached with an airtight holding member (seal member) interposed therebetween in order to provide airtightness. As this airtight holding member, an O-ring made of a metal gasket, rubber or the like is mainly used. Of these, metal gaskets are often used for flange bonding to processing chambers. This metal gasket is highly airtight and durable against heat and processing gas (including corrosive gas and oxygen-activated gas), but it cannot be used repeatedly. It has become. On the other hand, the O-ring is used as a hermetic seal material when a gate lid or a viewing port (glass) that opens and closes each time a wafer is loaded and unloaded as a window in a processing chamber. In other words, it is used for parts that repeatedly open and close and parts that cannot use a metal gasket such as glass.
[0004]
[Patent Document 1]
JP-A-5-315262, (paragraph numbers [0012] to [0015])
[0005]
[Patent Document 2]
JP-A-5-315261, (paragraph number [0013])
[0006]
[Patent Document 3]
JP 2002-217137 A (paragraph numbers [0014] to [0018))
[0007]
[Patent Document 4]
JP 2002-164585 A (paragraph numbers [0015), [0020))
[0008]
[Problems to be solved by the invention]
The above-described O-ring can be repeatedly used as a sealing member and is inexpensive, and thus is frequently used in vacuum processing apparatuses. However, in the substrate processing, if oxygen treatment species (in this case, oxygen atoms or ozone) generated by a treatment gas, for example, oxygen gas, are contained in the plasma treatment or gas atmosphere, the plasma or oxygen species may contain O.sub.2. The ring is exposed, the surface of the O-ring reacts chemically, and the O-ring deteriorates. Further, with this reaction, impurities such as carbon and fluorine are released from the O-ring into the processing atmosphere, so that there is a possibility that the impurities may penetrate into the substrate to be processed. In normal oxidation treatment or etching treatment, a reactive gas such as oxygen gas is often used. As a countermeasure, a corrosion-resistant O-ring can be used, but it is expensive and affects the product cost.
[0009]
Therefore, for example, in Patent Document 1, a concave portion is provided on the inner side of the processing chamber body from the position where the O-ring is attached, and a convex portion that fits the concave portion is provided on the side of the component to be attached. When this component is attached to the processing chamber main body, the concave portion and the convex portion are fitted to each other so that the processing gas and plasma are less likely to circulate. Patent Document 2 proposes a technique for preventing the deterioration of the O-ring by disposing the blocking part such as a fluororesin inside the O-ring so that the plasma and the processing gas do not contact the O-ring. Yes.
[0010]
In general, it is considered that the gap between constituent parts for performing airtight holding by an O-ring is preferably about 0.1 to 0.3 mm. However, there is a change in the gap due to a change in the hardness of the O-ring due to a change over time, and a change in the gap due to a warp or a distortion generated in the joint due to a heat history in the processing apparatus. Due to the change in the gap, the plasma and the processing gas enter the gap and enter the O-ring.
[0011]
Patent Document 3 discloses a technique for maintaining an optimal gap by using a resin stopper so that the O-ring is appropriately crushed and airtightness can be maintained. The stopper made of the disclosed resin material may react and release organic substances when exposed to plasma or processing gas (active species), so a gap that prevents intrusion of plasma or processing gas is defined. ing.
[0012]
However, in recent years, high-density plasma, high irradiation intensity, and high-energy light processing have been used because of demands for higher integration of devices and higher processing speeds. .Plasma and light have entered the gap of about 1 to 0.3 mm.
In order to prevent the intrusion of plasma, Patent Document 4 discloses that an inclined coil spring is arranged on the outer peripheral side of an O-ring, and components to be joined (for example, a processing chamber and a lid) are electrically connected to each other. A technique for performing magnetic shielding is disclosed. In Patent Document 4, since the inclined coil spring is disposed on the outer peripheral side of the O-ring and the O-ring exists on the plasma side (inner side), it is considered that the O-ring is exposed to plasma.
[0013]
Therefore, an object of the present invention is to provide a processing apparatus and a plasma apparatus that prevent damage to the hermetic holding means by processing gas containing plasma generated in a vacuum atmosphere or active species used for processing.
[0014]
[Means for Solving the Problems]
In order to achieve the above object, the present invention is provided between a sealing surface between an airtight container that generates plasma in an atmosphere of introduced processing gas and a dielectric window attached as one surface of the airtight container. An airtight holding means for maintaining an airtight state, and on the sealing surface, provided on the inner side of the airtight container with respect to the position where the airtight holding means is provided, and is made of a conductive material and has resilience. There is provided a processing apparatus comprising plasma blocking means formed into a shape.
[0015]
Further, the plasma blocking means is formed of a conductive member, and the shape thereof is a shape in which the conductive member is formed in a thin strip shape and wound in a spiral, and the conductive member is formed in a thin strip shape and is bent in the width direction. It is any one of an annular shape, a shape in which the conductive member is used as a conductive wire and is wound into a solenoid coil shape, or a shape in which the conductive wire is knitted into a tubular shape.
[0016]
Furthermore, an airtight container for generating plasma, a wall body in which a part of the container wall surface constituting the airtight container is detachably and airtightly provided, and an opposing portion between the wall body and the container wall surface is hermetically sealed. There is provided a plasma apparatus comprising a ring and plasma blocking means provided inside the chamber of the O-ring.
[0017]
The processing apparatus and the plasma apparatus configured as described above are generated by the plasma and the processing gas by providing the plasma shut-off means made of a conductive member having a restoring property and the airtight holding means made of an O-ring on the processing chamber side. The active species are prevented from reaching the O-ring, and the release of impurities and the deterioration of the O-ring are prevented.
[0018]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
FIG. 1 is a sectional view showing a conceptual overall configuration of an inductively coupled plasma processing apparatus as a first embodiment to which the processing apparatus of the present invention is applied. FIG. 2 is an enlarged cross-sectional view of the airtight holding portion of the vacuum processing apparatus.
[0019]
This vacuum processing apparatus includes a processing chamber 1 made of aluminum, stainless steel or the like, an exhaust system 2 connected to an exhaust port 1a of the processing chamber 1, and a gas inlet 1b connected to a processing gas, a purge gas, etc. A gas introduction system 3 for introduction into the processing chamber 1 is provided. The upper surface of the processing chamber 1 is opened, and an annular groove 1d is formed in the annular upper end portion 1c over the entire circumference. The annular groove 1d is, for example, an O-ring 4 made of a rubber material as an airtight holding means. Is partly exposed. This exposure amount is an interval at which the gap G is formed when hermetically sealed (sealed).
[0020]
Furthermore, an inner wall portion (dielectric window portion) 5 formed of a dielectric material such as glass is attached to the annular upper end portion 1c of the processing chamber 1 so that the O-ring 4 is properly crushed and airtight. A plasma generating coil 6 (upper electrode) is disposed on the upper surface (outside the chamber) of the dielectric window portion 5. Furthermore, an upper lid 7 is attached above the dielectric window 5 so as to cover the plasma generating coil 6. The upper lid 7 may be attached so as to press the dielectric window portion 5 so that the O-ring 4 of the annular upper end portion 1c is properly crushed so as to have airtightness in the processing chamber 1. A table (lower electrode) 8 having a function of holding a substrate 9 to be processed such as a semiconductor wafer or a display device substrate and adjusting the temperature of the substrate 9 to be processed is provided at the bottom of the processing chamber 1.
[0021]
The substrate 9 to be processed is carried in and out through a gate (not shown) provided on the side wall of the processing chamber 1. Alternatively, the substrate to be processed 9 can be opened and closed by opening and closing the dielectric window 5 and the substrate 9 to be processed can be taken in and out from above. The plasma generating coil 6 described above is connected to a high frequency power source 11 that outputs a high frequency power of 13.56 MHz, for example, via a matching unit 10. In the following description, the inner wall side (or the processing chamber side) of the processing chamber 1 is referred to as the inner side, and the outer wall side of the processing chamber 1 is referred to as the outer side.
[0022]
A waveguide connected to a microwave power source for generating plasma may be provided on the upper surface (outside the chamber) of the dielectric window 5.
[0023]
This processing apparatus has been described by taking a plasma film forming processing apparatus (CVD) for forming an oxide film as an example. However, the present invention is not limited to this, and an O-ring of the processing apparatus using plasma and / or reactive gas is of course not limited thereto. This is effective when applied to the hermetic holding means 4. Examples of the processing apparatus having an airtight holding means include a plasma CVD apparatus, a thermal CVD apparatus, a photo CVD apparatus, a sputtering apparatus, an etching apparatus, and an asher apparatus.
[0024]
Next, the airtight holding means A shown in FIG. 2 will be described.
The hermetic holding means A is hermetically sealed when the peripheral edge of the dielectric window 5 and the annular upper end 1c of the processing chamber 1 are in contact with each other. A similar annular groove 1e is formed on the inner side (processing chamber side) of the annular groove 1d in which the O-ring 4 of the annular upper end 1c is fitted. In the annular groove 1e, the plasma blocking means 12 formed in a shape having resilience such as a spring by a conductive material is fitted so as to be partially exposed when hermetically sealed. The plasma shut-off means 12 is made of a conductive material such as a material that does not corrode due to the plasma to be contacted, such as a metal. The shape of the plasma blocking means may be a metal thin and elongated (band-shaped) steel plate wound in a spiral shape, a conductive wire wound in a solenoid coil shape, or a braided shape.
[0025]
As the metal of the plasma blocking means 12, stainless steel, aluminum, copper, iron, etc., and alloys thereof are assumed. Moreover, you may perform a corrosion-resistant surface treatment with respect to these metals and alloys. The same applies to conductive portions in the following embodiments.
[0026]
When the dielectric window 5 and the annular upper end 1c are joined, the width of the gap G is limited if the plasma shut-off means 12 abuts both of them and the O-ring is crushed to achieve airtightness. Not. However, the width of the gap G is preferably a gap of 0.1 mm or less, for example, where the plasma does not reach the plasma blocking means 12 and reaches it.
[0027]
Next, an example of processing steps will be described. As the substrate 9 to be processed, for example, a semiconductor wafer is carried into the processing chamber 1 and placed on the table 8. Thereafter, the exhaust system 2 evacuates the atmosphere and purge gas in the processing chamber 1, and after reaching a set vacuum level, for example, an oxygen gas (O₂) To form an oxygen atmosphere maintained at a predetermined pressure. Next, high frequency power is supplied from the plasma generating coil 6 through the dielectric window portion 5 into the processing chamber 1 to generate oxygen atmosphere plasma. This plasma generates active species generated from the processing gas. The processing gas includes an active gas such as oxygen gas and a reactive gas having corrosive properties used for RIE or the like. In the following embodiments, an oxidation process using active species (oxygen active species) generated by oxygen gas is described as an example, but the present invention is not limited to this. Here, the oxygen active species is not limited to active oxygen but oxygen ions (O⁺, O₂ ⁺) And other active species containing ozone and oxygen atoms.
[0028]
Further, by heating the semiconductor wafer to about 300 ° C., the silicon of the semiconductor wafer is plasma oxidized. In this oxidation treatment, a silicon oxide film having a depth (thickness) of about 6 nm from the surface is formed in a treatment time of about 30 minutes.
[0029]
For this silicon oxide film, the amount of fluorine in the silicon oxide film is measured by using SIMS (Secondary Ion Mass Spectrometry), and the plasma blocking means 12 and the O-ring as in this embodiment are measured. And an example using only an O-ring without providing the plasma blocking means 12 as in the prior art. As a measurement result, FIG. 3 shows the relationship between the depth from the surface of the silicon oxide film having a thickness of 6 nm and the fluorine atom density.
[0030]
According to FIG. 3, in the example in which the plasma blocking means 12 is not provided only by the conventional O-ring 4, the silicon oxide film is formed until the depth of the silicon oxide film formed as shown by the dotted line exceeds 5 nm. A lot of fluorine is contained in the film. On the other hand, in the example in which the plasma blocking means 12 according to the present embodiment is provided, the fluorine atom density is 10 on the surface as shown by the solid line.¹⁹atoms / cm³It became the following, and it became clear that it decreased by 2 digits compared with the past.
[0031]
As described above, according to the present embodiment, the plasma and the processing gas affect the O-ring 4 by disposing the plasma shut-off means 12 made of a conductive member having a restoring property inside the O-ring 4. This can be prevented. As a result, impurities such as carbon and fluorine generated from the O-ring 4 can be prevented from penetrating into the substrate 9 to be processed. Further, the plasma blocking means 12 prevents diffusion of impurities such as carbon and fluorine from the O-ring 4 into the processing chamber 1. Further, when an organic substance is used as the material of the plasma shut-off means 12, the emission of impurities becomes a problem when exposed to plasma. However, if the material is a metal (conductor), the emission of impurities can be prevented. Furthermore, since the metal material is more stable thermally, it is desirable for the oxidation treatment or the like where the temperature of the substrate 9 to be processed is about 300 ° C.
[0032]
Next, the airtight holding means 12 in the vacuum processing apparatus according to the second embodiment will be described. 4A shows a cross-sectional structure of the annular upper end 1c of the processing chamber 1, and FIG. 4B shows an airtight state in which the annular upper end 1c and the facing portion of the dielectric window portion 5 are joined. It is a figure showing a cross-sectional structure of means B. The apparatus configuration other than that shown is equivalent to the configuration shown in FIG. In addition, in the constituent parts of the present embodiment, the same parts as those of the first embodiment described above are denoted by the same reference numerals, and the description thereof is omitted.
[0033]
As shown in FIG. 4A, the O-ring 4 and the plasma blocking means 22 are disposed on the annular upper end 1 c of the processing chamber 1. An annular slit 21 is formed over the circumference of the annular upper end 1c inside the groove in which the O-ring 4 is fitted. The plasma blocking means 22 is a thin plate made of a metal material, is formed in a strip shape like a leaf spring, and is bent and formed to have a beam portion 22a and an insertion portion 22b in the width direction. The insertion portion 22b of the plasma blocking means 22 is inserted into the annular slit 21 in an airtight manner over the entire circumference. The thickness of the thin plate is preferably thin as long as it has a restoring property like a spring.
[0034]
Then, as shown in FIG. 4B, when the annular upper end 1c and the dielectric window portion 5 are joined, the beam portion 22a of the plasma blocking means 22 is pushed by the dielectric window portion 5 and bent. However, it contacts the dielectric window portion 5 without a gap. At the same time, the O-ring 4 is properly crushed and airtightness is realized.
[0035]
According to the second embodiment, as in the first embodiment, the plasma blocking means 22 can block the plasma so that the plasma does not reach the O-ring 4. Thereby, carbon, fluorine gas, etc. can be prevented from being generated from the O-ring and diffusing into the processing chamber 1. Further, it can be manufactured with a simple configuration at low cost, and maintenance such as cleaning and replacement can be easily performed. Furthermore, if the gap G between the annular upper end portion 1c and the dielectric window portion 5 at the time of joining can be narrowed to be, for example, 0.1 mm or less, the active species generated from the processing gas is difficult to enter.
[0036]
Next, the airtight holding means of the vacuum processing apparatus according to the third embodiment will be described. FIG. 5A shows a cross-sectional structure of the annular upper end portion of the processing chamber, and FIG. 5B shows a cross-sectional structure of the airtight holding portion C in a state where the annular upper end portion 1c and the dielectric window portion 5 are joined. FIG. In addition, here, about the site | part equivalent to 1st Embodiment mentioned above in the component site | part of this embodiment, the same referential mark is attached | subjected and the description is abbreviate | omitted.
[0037]
As shown in FIG. 5 (a), the O-ring 4 and the plasma blocking means 23 are disposed on the annular upper end 1 c of the processing chamber 1. This plasma shut-off means 23 is produced by drawing or press molding into an annular shape composed of a beam portion 23a and a mounting portion 23b in the width direction. The plasma shut-off means 23 is disposed inside the O-ring 4, the attachment portion 23b is airtightly fixed to the counterbore portion 24 of the annular upper end portion 1c, and the beam portion 23a rises upward.
[0038]
As shown in FIG. 5B, when the annular upper end 1c and the dielectric window portion 5 are joined, the beam portion 23a of the plasma blocking means 23 is pushed by the dielectric window portion 5 and bent. The dielectric window portion 5 is brought into contact with no gap. Furthermore, the O-ring 4 is crushed by an appropriate amount to realize airtightness.
[0039]
According to the third embodiment, similarly to the first embodiment, the plasma blocking means 23 can block the penetration of the plasma so that it does not reach the O-ring 4. Further, it can be manufactured with a simple configuration at low cost, and maintenance such as cleaning and replacement can be easily performed. Also in the present embodiment, if the gap G between the upper surface of the annular upper end portion 1c and the side wall surface of the dielectric window portion 5 at the time of bonding can be narrowed to 0.1 mm or less, the active species generated from the processing gas also hardly enter. .
[0040]
The plasma shut-off means 22 and 23 in the second and third embodiments described above are made of a metal material. However, the plasma shut-off means 22 and 23 are made of a shape memory alloy, and a heater or the like is provided in the vicinity so that the plasma shut-off means can be used during operation. 22 and 23 may be raised so as to contact the dielectric window 5.
[0041]
In the first, second, and third embodiments described above, even if the plasma blocking means 12, 22, and 23 are provided on the inner side (the processing chamber 1 side) than the O-ring 4, the constituent parts to be bonded are made of glass. Since it is the body window portion 5, friction with the plasma blocking means 12, 22, and 23 is small and particles are hardly generated, so that the substrate 9 to be processed is hardly affected. Moreover, generation | occurrence | production of a particle can be decreased more by selecting glass with hardness, strengthening the glass surface, or grind | polishing so that the surface may become smooth.
[0042]
Next, an airtight holding unit of the vacuum processing apparatus according to the fourth embodiment will be described. As shown in FIG. 6, in the present embodiment, the processing gas that has entered the upper surface portion inside the upper wall portion 1 f of the annular upper end portion 1 c of the processing chamber 1 and the O-ring 4 of the annular upper end portion 1 c subsequent thereto, for example, A coating 24a that adsorbs (disappears) active species by a surface reaction is formed. In addition, a similar coating 24b is formed on the surface 5a of the dielectric window 5 that faces the coating 24a of the annular upper end 1c during bonding.
[0043]
These coatings 24a and 24b are coatings that function as oxygen adsorbents. For example, when the processing chamber 1 is made of stainless steel, the coating material has a larger reaction coefficient (surface loss coefficient) with oxygen than the inner wall of the apparatus. Any material having a large surface loss coefficient such as aluminum (Al), tantalum (Ta), or nickel (Ni) is preferable. As a method for forming the coatings 24a and 24b, a thermal spraying method in which the coatings 24a and 24b are formed by vapor deposition or directly sprayed may be used. In addition, the gap G between the annular upper end 1c of the processing chamber and the dielectric window 5 at the time of bonding is preferably in the range of 0 to 0.3 mm, for example, 0.1 mm or less.
[0044]
In the present embodiment, in the case of forming an oxide film, by providing a coating 5a made of a member having a surface loss coefficient higher than that of the inner wall of the device and the dielectric window 5 in the oxygen active species intrusion path, the oxygen active species is coated with the coating 5a. It is possible to reduce the amount of active species that reach and react with the O-ring 4 by reacting or recombining at the surface.
[0045]
In this embodiment, as in the first and second embodiments described above, the density of fluorine atoms in the silicon oxide film is conventionally the same as in the case where the silicon oxide film is formed by performing plasma oxidation on the semiconductor wafer. It confirmed that it fell compared. Although an example in which oxygen gas is applied has been described here, it can be applied to other process gases by appropriately selecting a suitable coating material.
[0046]
Next, the airtight holding means E of the vacuum processing apparatus according to the fifth embodiment will be described.
[0047]
In the present embodiment, as shown in FIG. 7, a metal film 25 is plated on the surface of the O-ring 4 on the vacuum side, or a sputtering method is used for the O-ring 4 fitted into the annular upper end 1c of the processing chamber 1. Form. Since the O-ring 4 and the metal film 25 have different elastic coefficients (expansion coefficients), if the entire surface of the O-ring 4 is covered with the metal film 25, cracking or peeling is likely to occur when the O-ring 4 is expanded or contracted. . Therefore, it is desirable to form the metal film 25 on a part of the surface of the O-ring 4. As a material for the metal film 25, a material having elasticity (soft) similar to that of the O-ring 4 is preferable in order to prevent cracking. As the material of the metal film 25, copper, aluminum, platinum or the like can be considered.
[0048]
According to the present embodiment, since plasma and active species are no longer in direct contact with the O-ring 4, the concentration of impurities that contaminate the substrate 9 to be processed can be greatly reduced, and the first implementation described above. An effect equivalent to the form can be obtained. The metal film does not necessarily need to be formed of a metal material, and may be formed of a material that does not contain impurities which are generated when the plasma or active species are touched. As a result, the organic substance constituting the O-ring 4 does not react with the active species, so that emission of impurities such as fluorine and carbon can be suppressed and deterioration of the O-ring 4 can be prevented.
[0049]
Next, FIG. 8 is a sectional configuration diagram showing a conceptual overall configuration of an optical processing apparatus using a xenon excimer lamp as a sixth embodiment to which the vacuum processing apparatus of the present invention is applied. FIG. 9 is an enlarged cross-sectional view of the airtight holding means of the vacuum processing apparatus. In addition, here, about the site | part equivalent to 1st Embodiment mentioned above in the component site | part of this embodiment, the same referential mark is attached | subjected and the description is abbreviate | omitted.
[0050]
This vacuum processing apparatus includes a processing chamber 1, an exhaust system 2, a gas introduction system 3, an O-ring 4 for airtightness, and an inner wall (light transmission window) made of transparent quartz glass or the like. 31, a xenon excimer lamp (hereinafter referred to as a lamp) 32 disposed on the upper surface (outside the chamber) of the light transmission window 31, an upper lid 7, and a lamp power source 33 for causing the lamp 32 to emit light. The A table 8 that holds the substrate 9 to be processed and has a function of adjusting the processing temperature of the substrate 9 is provided at the bottom of the processing chamber 1. In addition, a gate (not shown) for loading and unloading the substrate 9 to be processed is provided. In this vacuum processing apparatus, the annular upper end portion 1 c and the light transmission window portion 31 of the processing chamber 1 are hermetically sealed with an O-ring 4 interposed therebetween.
[0051]
This vacuum processing apparatus evacuates the inside of the processing chamber 1 to reach a predetermined degree of vacuum, and then O 2 is introduced by a gas introduction system 3.₂A gas is introduced to generate an oxygen atmosphere at a desired pressure. Light (light energy) having a wavelength of 172 nm emitted from the lamp 32 is emitted into the oxygen atmosphere.₂The gas is photolyzed to generate elementary atoms and ozone in the processing chamber 1, and the surface of the substrate 9 to be processed heated to 300 ° C. by the table 8 is oxidized.
[0052]
In this configuration, the radiated light from the lamp 32 passes through the light transmission window 31 and irradiates the O-ring 4. When irradiated, the O-ring 4 is deteriorated by strong ultraviolet light. Further, since the active oxygen species are also generated around the O-ring 4 by the emitted light, the O-ring 4 reacts with the active oxygen species, and impurities such as carbon and fluorine are released from the O-ring 4. Therefore, in the present embodiment, a light shielding plate 34 is provided on the optical path of the radiated light traveling from the lamp 32 toward the O ring 4 to shield the radiated light irradiated on the O ring 4. The light shielding plate 34 may be formed of a material that can shield the radiated light and does not melt by the heat of the light source. For example, a high melting point metal may be considered. Of course, the processing gas is not limited to oxygen gas, and can be applied to a processing gas having corrosive properties used for processing such as film formation, etching, and diffusion on the substrate 9 to be processed.
[0053]
As shown in FIG. 5, the light processing apparatus according to the present embodiment is provided with a light shielding plate on the optical path between the lamp 32 and the O-ring 4 so that light is not irradiated to the O-ring 4 and the vicinity thereof. 4 and oxygen active species can be prevented from reacting.
[0054]
The present invention described above can be effective for all devices using the O-ring 4 as the hermetic holding means, but is most effective when applied to a portion where the plasma density is high in the device. is there. The portion where the dielectric window portion 5 and the processing chamber shown in the first and second embodiments are joined is a portion having the highest plasma density, and other than the O-ring 4 as a means for airtightness. Since the use of the airtight holding means is difficult, the effect of the present invention is most exhibited.
[0055]
Further, in the vacuum processing apparatus related to the plasma processing apparatus, an effect can be obtained regardless of the type of the plasma source. Moreover, the energy for decomposing | disassembling not only plasma but raw material gas should just be supplied.
[0056]
Further, in the airtight holding means of the light processing apparatus using the xenon excimer lamp as the light source, since the light irradiation to the O-ring 4 is shielded, the deterioration of the O-ring 4 due to ultraviolet light, the oxygen active species, etc. near the O-ring Generation of active species can be suppressed.
[0057]
In addition to the light processing apparatus in this embodiment, is it applicable to each annealing apparatus using an incandescent bulb, a halogen lamp or a flash lamp, a lamp heating chamber mounted in a film forming apparatus (CVD etc.), etc. it can.
[0058]
In addition, in each embodiment mentioned above, it is also possible to implement combining each embodiment.
As a first example, as shown in FIG. 10 (a), the plasma blocking means 12 in the first embodiment and the coatings 24a and 24b functioning as oxygen adsorbents in the fourth embodiment are combined to generate plasma. The blocking means 12 blocks the plasma and the coatings 24 a and 24 b adsorb the active species to prevent the plasma and the active species from reaching the O-ring 4.
[0059]
As a second example, as shown in FIG. 10B, according to the configuration in which the plasma blocking means 12 of the first embodiment and the O-ring 4 of the fifth embodiment are combined, the plasma blocking means 12 has passed. Even if the plasma and active species may reach the O-ring 4, the O-ring 4 can be prevented from deteriorating. Further, by combining the first example with the fifth embodiment, even if the plasma and active species that have passed through the plasma blocking means 12 and the coatings 24a, 24b may reach the O-ring 4, the O-ring 4 Can be prevented. Similarly, the same effect can be obtained by combining the fourth and fifth embodiments with respect to the second and third embodiments.
[0060]
As a third example, as shown in FIG. 10C, photodecomposition is achieved by combining the vacuum processing apparatus of the sixth embodiment and the coatings 24a and 24b that function as oxygen adsorbents in the fourth embodiment. It is possible to prevent the active species from reaching the O-ring 4 by adsorbing the active species due to the processing gas generated by the coatings 24a and 24b.
[0061]
As a fourth example, as shown in FIG. 10 (d), by combining the vacuum processing apparatus of the sixth embodiment and the O-ring 4 provided with the metal film 25 in the fifth embodiment, photolysis is performed. Even if active species, for example, oxygen active species, due to the processing gas generated in step 1 reach the O-ring 4, deterioration of the O-ring 4 can be prevented. Further, the fifth embodiment may be combined with the third example.
[0062]
In the above-described embodiment, an example of hermetically sealing a dielectric used as an electromagnetic wave passage window for generating plasma has been described. However, even when applied to an airtight holding means of a metal on-off valve that allows a processing object to enter and exit. Good.
[0063]
【The invention's effect】
As described above in detail, according to the present invention, it is possible to provide a vacuum processing apparatus that prevents damage to an airtight holding material due to plasma generated in a vacuum atmosphere or a processing gas containing oxygen active species used for processing.
[Brief description of the drawings]
FIG. 1 is a cross-sectional configuration diagram showing a conceptual overall configuration of an inductively coupled plasma processing apparatus according to a first embodiment to which a vacuum processing apparatus of the present invention is applied.
FIG. 2 is an enlarged cross-sectional view of an airtight holding portion of the vacuum processing apparatus according to the first embodiment.
FIG. 3 is a diagram showing the relationship between the depth from the surface of the silicon oxide film and the fluorine atom density in the first embodiment.
FIG. 4A is a diagram showing a cross-sectional configuration of an annular upper end portion of a processing chamber according to a second embodiment, and FIG. 4B is a view in which the annular upper end portion and a dielectric window portion are joined. It is a figure which shows the cross-section of a state.
FIG. 5A is a diagram showing a cross-sectional structure of an annular upper end portion of a processing chamber according to a third embodiment, and FIG. 5B is a view in which the annular upper end portion and a dielectric window portion are joined. It is a figure which shows the cross-section of a state.
FIG. 6 is a view for explaining an airtight holding unit of a vacuum processing apparatus according to a fourth embodiment.
FIG. 7 is a view for explaining an airtight holding unit of a vacuum processing apparatus according to a fifth embodiment.
FIG. 8 is a sectional structural view showing a conceptual overall configuration of an optical processing apparatus using a xenon excimer lamp according to a sixth embodiment to which the vacuum processing apparatus of the present invention is applied.
9 is a view showing an enlarged cross-sectional structure of an airtight holding hand portion of the vacuum processing apparatus in FIG.
FIG. 10 is a diagram illustrating a configuration example in which the first to sixth embodiments are combined.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Processing chamber, 1a ... Exhaust port, 1b ... Gas introduction port, 1c ... An annular upper end part, 1d ... Annular groove, 2 ... Exhaust system, 3 ... Gas introduction system, 4 ... O-ring, 5 ... Inner wall part (dielectric) Body window portion), 6 ... coil for generating plasma, 7 ... upper cover, 8 ... table (lower electrode), 9 ... substrate, 10 ... matching unit, 11 ... high frequency power supply, 12 ... plasma blocking means.

Claims (10)

An airtight container that generates plasma in the atmosphere of the introduced processing gas;
An airtight holding means for maintaining an airtight state, interposed between sealing surfaces of the dielectric window attached as one surface of the airtight container;
On the sealing surface, provided on the inner side of the hermetic container with respect to the position where the hermetic holding means is provided, and plasma shielding means formed of a conductive material and having a recoverable shape. The processing apparatus characterized by comprising. The plasma blocking means is formed of a conductive member, and the shape thereof is a shape in which the conductive member is formed in a thin strip shape and wound in a spiral, and the conductive member is formed in a thin strip shape and has a bend in the width direction. 2. The process according to claim 1, wherein the shape is any one of a molded shape, a shape obtained by winding the conductive member into a solenoid coil shape, or a shape knitted into a cylindrical shape using the conductive wire. apparatus. An airtight container that generates plasma in the atmosphere of the introduced processing gas;
An airtight holding means for maintaining an airtight state, interposed between the joint surfaces with the dielectric window attached as one surface of the airtight container;
It is composed of a member having a higher reaction coefficient with the active species generated from the processing gas than the member forming the hermetic container, and at least one of the inner side of the hermetic container with respect to the position where the hermetic holding means is provided. Gas blocking means provided on the facing surface;
A processing apparatus comprising: An airtight container that generates plasma in the atmosphere of the introduced processing gas;
An airtight holding means for maintaining an airtight state, interposed between sealing surfaces of the dielectric window attached as one surface of the airtight container;
A gas blocking means comprising a conductive member formed on a surface of the hermetic holding means toward the inside of the hermetic container;
A processing apparatus comprising: An airtight container for performing processing involving photolysis by light energy in the atmosphere of the introduced processing gas;
An airtight holding means for maintaining an airtight state, interposed between sealing surfaces with a light transmission window portion attached as one surface of the airtight container;
A light source provided on the non-joint surface side in the light transmission window,
A light shielding means for shielding the light, the light emitted from the light source being provided on an optical path toward the airtight holding means;
A processing apparatus comprising: The processing apparatus according to claim 1, wherein the processing gas is made of a reactive gas containing at least oxygen atoms in the composition. The processor is
Each of the first surface including the sealing surface provided on the inner side of the airtight container with respect to the position where the airtight holding means is provided, and the second surface of the component part facing the first surface Gas blocking means comprising a member having a higher reaction coefficient with the active species generated from the processing gas than the hermetic container material provided on the surface of
The processing apparatus according to claim 5, further comprising: An airtight container for generating plasma;
A wall body in which a part of the container wall surface constituting the hermetic container is detachably and airtightly provided;
An O-ring that hermetically seals the facing portion between the wall and the wall surface of the container;
Plasma blocking means provided inside the chamber of the O-ring;
A plasma apparatus comprising: 14. The plasma device according to claim 13, wherein the plasma blocking means is at least one of an annular metal wire, an annular metal leaf spring, and an annular metal beam. An airtight container to which a processing gas is supplied;
A wall body in which a part of the container wall surface constituting the hermetic container is detachably and airtightly provided;
A harmful gas adsorbing means provided on the opposing surface of the wall and the container wall surface at the opposing portion of the wall and the container wall;
A plasma apparatus comprising:

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