JP2005045239A5

JP2005045239A5 -

Info

Publication number: JP2005045239A5
Application number: JP2004205260A
Authority: JP
Filing date: 2004-07-12
Publication date: 2007-08-30
Anticipated expiration: 2024-07-12

Claims

A nitride semiconductor substrate includes a nitride semiconductor layer formed by laminating an n-type semiconductor layer, an active layer, and a p-type semiconductor layer thereon, and the nitride semiconductor layer has a striped waveguide region of laser light And a nitride semiconductor laser element having end face protective films on both end faces substantially perpendicular to the waveguide region,
The nitride semiconductor substrate has an excitation region that absorbs light emitted from the active layer and emits excitation light having a wavelength longer than the emission wavelength;
At least one of the end face protective films has a high reflectance with respect to the emission wavelength from the excitation region.

The nitride semiconductor laser element according to claim 1, wherein the end face protective film has a low reflectance with respect to an emission wavelength from the active layer.

3. The nitride semiconductor laser device according to claim 1, wherein the high-reflectance end face protective film is provided on both the emission-side end face and the rear-side end face.

The end face protective film includes the high reflectivity end face protective film;
An end face protective film that is at least partially overlapped with the end face protective film having a high reflectivity and is in high reflectivity with respect to the emission wavelength from the active layer and in contact with the semiconductor layer;
The nitride semiconductor laser device according to claim 1, comprising:

5. The nitride according to claim 1, wherein the cold air region is an excitation region having excitation light stronger than a peripheral region in the substrate surface and overlaps with the waveguide region. Semiconductor laser element.

A nitride semiconductor substrate includes a nitride semiconductor layer formed by laminating an n-type semiconductor layer, an active layer, and a p-type semiconductor layer thereon, and the nitride semiconductor layer has a striped waveguide region of laser light And a nitride semiconductor laser element having an emission side end face protective film and an opposite rear side end face protective film on an end face substantially perpendicular to the waveguide region,
The nitride semiconductor substrate has an excitation region that absorbs light emitted from the active layer and emits excitation light having a wavelength longer than the emission wavelength;
The rear side end face protective film includes a first end face protective film having a high reflectance with respect to the wavelength of the excitation light, and a second end face protective film having a high reflectance with respect to the emission wavelength from the active layer. And
The emission-side end face protective film includes a third end face protective film having a high reflectivity with respect to the wavelength of the excitation light.

The nitride semiconductor laser element according to claim 6, wherein the first end face protective film and / or the third end face protective film has a low reflectance with respect to an emission wavelength from the active layer.

The exit-side end face protective film, the nitride semiconductor laser device according to claim 6 or 7, wherein a fourth end surface protective film having a high reflectivity for the emission wavelength from the active layer.

The first end face protective film and the second end face protective film are and / or
9. The nitride semiconductor laser device according to claim 8, wherein the third end face protective film and the fourth end face protective film are laminated so that at least a part thereof overlaps.

The second end face protective film and / or
The nitride semiconductor laser element according to claim 6, wherein the fourth end face protective film is formed in contact with the semiconductor layer.

The excitation region, the nitride semiconductor laser device according to any one of claims 1 to 10 having a low dislocation density than the surrounding area.

The excitation region, the nitride semiconductor laser device according to any one of the high impurity concentration claims 1 to 11 than in the peripheral region thereof.

The nitride semiconductor laser element according to claim 12 , wherein the impurity is at least one of H, O, C, and Si.

Emission wavelength from the active layer, Ri 390~420nm der,
The nitride semiconductor laser element according to any one of claims 1 to 13, wherein a wavelength of the excitation light is 550 to 600 nm .

Said waveguide region, the nitride semiconductor laser device according to any one of the excitation region to claim 1 is formed above the 14.

Said waveguide region, the nitride semiconductor laser device according to claim 1 or 6, wherein is formed in a region away from the excitation region.

An LD device including the nitride semiconductor laser element according to any one of claims 1 to 16 and a PD that detects light emission of the nitride semiconductor laser element, wherein the spectral sensitivity of the PD is: An LD device in which the excitation light λ _ex is larger than the emission wavelength λ _LD of the nitride semiconductor laser element.