JP2005045146A - Multi-beam semiconductor light emitting device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a multi-beam semiconductor light emitting device and a manufacturing method thereof which has a constitution having a high productivity. <P>SOLUTION: The multi-beam semiconductor laser device 50 has on a semiconductor substrate 16 four edge emitting semiconductor laser elements 14A-14D formed in their emitting direction in parallel with each other via the element separating regions 52A-52E which are so constituted as to be able to be driven independently of each other. The top surfaces of the semiconductor laser elements 14 are so covered respectively with insulation films 54 as to expose p-side electrodes 28A-28D therefrom to the external. Conductive layers 56A-56D are so extended on the insulation films 54 from the p-side electrodes 28A-28D to the bonding pads 58A-58D provided on the outsides of the semiconductor laser elements 14A, 14D as to connect electrically the p-side electrodes 28A-28D with the bonding pads 58A-58D. In the multi-beam semiconductor laser device, the insulation films, insulation layers buried in separating grooves, the bonding pads, and the conductive layers are formed by an ink-jet printing method. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a multi-beam semiconductor light-emitting device and a method for manufacturing the same, and more particularly, a multi-beam semiconductor light-emitting device having a structure with high production efficiency, and a method for manufacturing a multi-beam semiconductor light-emitting device with high production efficiency. The present invention relates to a multi-beam semiconductor light emitting device having an optimum configuration as a beam semiconductor laser array, and a manufacturing method thereof.

A semiconductor light emitting device using a semiconductor laser element, a semiconductor light emitting diode, or the like as a light emitting unit is used as a light source for various optical devices, for example, an optical device for recording / reproducing an optical recording medium such as an optical disk, or a light source such as a laser beam printer. It is used as.
In recent years, in order to increase the speed of optical recording / reproducing processing or printing processing, a multi-beam semiconductor light-emitting device that includes a plurality of light-emitting units and can be driven independently is required.

In addition, there is a demand for speeding up the operation of the light emitting unit in addition to the use of multi-beams, and further reduction in size is required.
In order to reduce the size of a multi-beam semiconductor light emitting device, for example, the entire multi-beam semiconductor laser device, it is necessary to reduce the size of an optical system attached to the multi-beam semiconductor laser device. Along with this, there is an increasing demand for high integration of the multi-beam semiconductor light-emitting device in order to narrow the beam interval emitted from each semiconductor laser element of the multi-beam semiconductor light-emitting device as much as possible.

Thus, development research for highly integrating multi-beam semiconductor laser devices has been actively conducted. For example, Japanese Patent Application Laid-Open No. 2000-269601 discloses an example of a configuration and a manufacturing method of an independently driven multi-beam semiconductor laser device. (Pages 2 and 3).
Hereinafter, the configuration of the multi-beam semiconductor laser device 10 disclosed in the above publication and the manufacturing method thereof will be described with reference to FIG. FIG. 11 is a perspective view of a conventional multi-beam semiconductor laser device.
As shown in FIG. 11, the multi-beam semiconductor laser device 10 includes a plurality of semiconductor light emitting units arranged in parallel to the laser beam emission direction through three separation regions 12 </ b> A to 12 </ b> C so that they can be driven independently. In other words, four edge-emitting semiconductor laser elements 14A to 14D are provided.

Each of the semiconductor laser elements 14A to 14D has a compound semiconductor layer laminated structure constituting a laser structure on a common n-type semiconductor substrate 16, for example, an n-type first cladding layer 18, an active layer 20, and a p-type second cladding layer 22. A laminated structure of a current blocking layer 24 and a cap layer 26 having a central region opened in stripes parallel to the laser emission direction is provided.
Each of the semiconductor laser elements 14 </ b> A to 14 </ b> D includes p-side electrodes 28 </ b> A to 28 </ b> D on the cap layer 26 above the central opening region of the current blocking layer 24.

The semiconductor laser elements 14A and 14B, the semiconductor laser elements 14B and 14C, and the semiconductor laser elements 14C and 14D are electrically separated by the separation regions 12A to 12C provided therebetween. The isolation regions 12 </ b> A to 12 </ b> C each include an isolation groove 30 that reaches the semiconductor substrate 16 through the cap layer 26, the current blocking layer 24, the second cladding layer 22, the active layer 20, and the first cladding 18, and the isolation groove 30. The insulating film 32 is formed on the entire surface including the groove wall.
Further, the isolation regions 12 </ b> A to 12 </ b> C are planarized by an isolation groove embedded insulating layer 34 formed on the entire surface including the isolation groove 30.

The p-side electrodes 28 </ b> A to 28 </ b> D are exposed to the outside through the windows 36 </ b> A to 36 </ b> D in which the insulating film 32 and the isolation groove embedded insulating layer 34 are opened.
Further, as connection terminals to the outside, bonding pads 38A and B are provided independently in the outer region of the semiconductor laser element 14A, and bonding pads 38C and D are provided independently in the outer region of the semiconductor laser element 14D. The p-side electrodes 28A to 28D are connected to the bonding pads 38A to 38D by conductors 40A to 40D, respectively.
A common n-side electrode 42 is provided on the back surface of the n-type semiconductor substrate 16.

According to this configuration, a drive voltage is independently applied between each of the p-side electrodes 28 </ b> A to 28 </ b> D and the common n-side electrode 42, so that the current flows in the central stripe-shaped opening of the current blocking layer 24. The light is injected in a limited manner into the active layer 20 in the lower region (stripe portion 44) and emits light. The stripe part 44 is formed in a mirror surface by cleaving the opposing end face, and constitutes a stripe-shaped optical resonator.
Since these semiconductor laser elements 14A to 14D are separated from each other by the element isolation regions 12A to 12C, and the p-side electrodes 28A to 28D are provided electrically independently for each of the semiconductor laser elements 14A to 14D, p By applying a voltage between the side electrodes 28A to 28D and the n-side electrode 42, each can operate independently.

Next, a method for manufacturing the multi-beam semiconductor laser device 10 will be described with reference to FIGS. 12 (a) to 12 (c), FIG. 13 (d) to FIG. 13 (f), and FIG. 14 (g) to FIG. 14 (i) respectively show a multi-beam semiconductor laser device according to a conventional method. It is board | substrate sectional drawing of each process at the time of manufacturing. FIGS. 15, 16, and 17 are a plan view of the current blocking layer, a plan view of the p-side electrode, and a plan view of the p-side electrode exposed from the insulating film, respectively.
First, as shown in FIG. 12A, an n-type AlGaAs first cladding layer 18, an active layer 20, and a p-type AlGaAs second cladding layer 22 are sequentially epitaxially grown on an n-type GaAs semiconductor substrate 16.
Next, the second cladding layer 22 is etched, and as shown in FIG. 12B, stripe-shaped shallow grooves 44 are formed along both sides of the p-side electrodes 28A to 28D forming regions of the semiconductor laser elements 14A to 14D, respectively. Form. That is, the region between the shallow groove 44 and the shallow groove 44 is positioned below the p-side electrodes 28A to 28D.

Next, an n-type GaAs semiconductor layer having a conductivity type different from that of the second cladding layer 22 is epitaxially grown on the entire surface of the substrate, buried in the shallow groove 44, and subsequently etched back, as shown in FIG. A current blocking layer 24 made of an n-type GaAs semiconductor layer is formed only in the shallow groove 44.
As a result, the current blocking layer 24 is formed in a parallel arrangement in stripes on the second cladding layer 22 as shown in FIG.

Next, as shown in FIG. 13D, a p-type GaAs cap layer 26 having the same conductivity type as that of the second cladding layer 22 is epitaxially grown on the entire surface of the second cladding layer 22 and the current blocking layer 24. Thereby, the compound semiconductor laminated structure which comprises a laser structure can be formed.
As shown in FIG. 13E, stripe-shaped p-side electrodes 28A to 28D separated from each other by photolithographic processing and etching are formed on the cap layer 26 between the adjacent current blocking layers 24 in an ohmic manner. Form deposition. As shown in FIG. 16, the p-side electrodes 28A and 28D on both sides are formed so as to have an L-shaped pattern in which a part thereof extends outward.
Next, as shown in FIG. 13F and FIG. 16, at least the active layer 20 extends downward from the cap layer 26 along the p-side electrodes 28A to 28D in the interelectrode regions of the p-side electrodes 28A to 28D. A separation groove 30 penetrating through is formed.

Subsequently, as shown in FIG. 14G, an insulating film 32 is formed on the entire surface of the substrate including the groove wall of the separation groove 30 by a CVD (Chemical Vapor Deposition) method.
Next, as shown in FIG. 14H, the insulating film 32 is etched by photolithography and etching to open windows 36A to 36D on the electrodes 28A to 28D, respectively.
Next, as shown in FIG. 14I, a planarization insulating material 34 is applied to the entire surface of the substrate so as to fill the respective separation grooves 30 to form the separation groove embedded insulating layer 34. Subsequently, as shown in FIGS. 11 and 17, the isolation groove embedded insulating layer 34 is etched back by time control to open the windows 36A to 36D again to expose the p-side electrodes 28A to 28D to the outside.

Then, as shown in FIG. 11, the conductors 40B and 40C that are in ohmic contact with the p-side electrodes 28B and C exposed through the windows 36B and 36C by photolithography and etching, respectively, are extended on the insulating film 32. The bonding pads 38B and 38C are formed at the extended ends of the conductors 40B and 40C.
Similarly, conductors 40A and 40D connected to the p-side electrodes 28A and 28D exposed through the windows 36A and 36D by photolithography and etching are formed on the insulating film 32, and the conductors 40A and D are formed. Bonding pads 38A and 38D are formed at the extended ends.
Although not shown in the drawing, external leads such as Au wires are bonded to the bonding pads 38, respectively.
Further, a common n-type electrode 42 is deposited on the entire back surface of the semiconductor substrate 16 in an ohmic manner.
JP 2000-269601 A (pages 2 and 3)

  In the conventional technique, a separation groove 30 penetrating at least the active layer 20 from the cap layer 26 is formed, and then an insulating film 32 is formed on the entire surface of the substrate by a CVD method, insulating by photolithography and etching. Etching the film 32 to open windows 36A to D on the p-side electrodes 28A to 28D, respectively, applying a planarizing insulating material over the entire surface of the substrate to form a separation groove embedded insulating layer 34 to form the separation groove 30 A step of etching back the isolation groove buried insulating layer 34 by time control, opening the windows 36A to D again, exposing the p-side electrodes 28A to 28D outside, and forming a metal film by sputtering or the like. Then, a metal film is patterned by photolithographic processing and etching to form conductors 40A-D and bonding pads 38A-D. It requires multiple steps by the photo lithography process and etching process and the like.

  That is, the problem to be solved by the present invention is that these processes performed by applying the photolithography process and the etching process require a photomask and an etching mask for each process, which requires work time and cost. However, it is difficult to improve production efficiency. In addition, it is difficult to improve the yield in the step of re-opening the window by applying the isolation groove filling insulating layer to the time-controlled etch back.

  In view of the circumstances as described above, an object of the present invention is to provide a multi-beam semiconductor light emitting device having a configuration with high production efficiency and a method for manufacturing the same.

In order to achieve the above object, a multi-beam semiconductor light-emitting device according to the present invention includes a plurality of edge-emitting semiconductor light-emitting portions coated with an insulating film on a semiconductor substrate in parallel with an emission direction through an element isolation region. One electrode of each light emitting part is provided to be exposed from the insulating film for each light emitting part, a bonding pad is provided in an outer region of the plurality of light emitting parts, and a conductive layer is provided from one electrode to the bonding pad In the multi-beam semiconductor light emitting device extending on the insulating film and electrically connecting one electrode to the bonding pad,
The insulating film is discharged as droplets of either a solution in which an organic insulator is dissolved in a solvent, a suspension in which a fine inorganic inorganic insulator is dispersed in a liquid, or a solution in which an inorganic insulator is dissolved in a solvent. Next, the insulating film is formed by evaporating a solvent or a liquid.

In the multi-beam semiconductor light emitting device according to the present invention, the light emitting part may be a semiconductor laser element or a diode.
Moreover, there is no restriction | limiting in the structure of a light emission part, ie, the composition of the compound semiconductor which comprises a light emission part, the composition of a board | substrate, the oscillation wavelength of a light emission part.

As a method for discharging a liquid or a solution as droplets, an ink jet printing method is preferably applied. In the inkjet method, a small droplet of recording liquid (ink) is ejected from a nozzle of a recording head toward an object under strict pattern control, and ink dots are selectively attached to a desired area of the object. This is a technique of forming a pattern ink film and printing an image of a desired pattern made of an ink film on an object.
The inkjet system is widely used as a method for printing an image because it can output a high-quality image with a simple configuration.

The ink jet device communicates with a plurality of pressure generating chambers that generate pressure for ejecting ink droplets by the action of piezoelectric elements and heating elements, a reservoir that contains ink and supplies ink to the pressure generating chamber, and a pressure generating chamber. And an ink jet recording head having a nozzle opening for ejecting ink by the pressure in the pressure generating chamber, and ejecting ink droplets from the nozzle opening by applying ejection energy to the ink in the pressure generating chamber in response to a print signal.
The ink jet method includes a thermal method, a continuous vibration generation method (piezo method), an electrostatic attractive force method, and the like depending on a difference in a method of flying ink.

The thermal method is a method in which bubbles are generated by locally heating the ink, and the ink is pushed out from the nozzle opening by the pressure of the generated bubbles to fly toward a printing object.
A thermal printer is equipped with a printer head on which a heat generating element that heats ink and a drive circuit that drives the heat generating element by a logic integrated circuit are mounted on a semiconductor substrate. From the nozzle opening.

In the continuous vibration generation method (piezo method), a part of the pressure generation chamber is configured by a vibration plate, and the vibration plate is deformed by a piezoelectric element to discharge ink from a nozzle opening. There are two known types of piezoelectric vibration type ink jet heads, one that uses a piezoelectric element in a longitudinal vibration mode that extends and contracts in the axial direction of the piezoelectric element and one that uses a piezoelectric element in a flexural vibration mode.
An electrostatic attractive ink jet head using static electricity as an actuator is also known.

The ink used for the ink jet ink jet printer needs to satisfy the following conditions.
(1) Physical property values such as viscosity, surface tension, electrolysis degree, density, and the like are within appropriate ranges according to the ink ejection characteristics of the recording head.
(2) During long-term use, solids are deposited due to chemical changes caused by chemical reactions between the ink and the components that hold the recording head material or ink, and chemical changes caused by the action of heat on the ink. There should be no occurrence or change in ink physical properties.
(3) The nozzle opening of the recording head of an ink jet printer is clogged, or even if the nozzle is not completely clogged, solids or sticky matter adheres to the vicinity of the nozzle, or the physical properties of the ink in the nozzle, especially the viscosity is large. If it changes, the recording properties, ejection stability, and ejection responsiveness deteriorate. Accordingly, the ink in the nozzle openings does not thicken or solidify during the recording pause so that the nozzle openings of the recording head are not clogged.
(4) A print density necessary for recording can be obtained.
In general, when the solute content in the ink is increased to increase the printing density, the nozzle opening (3) tends to be clogged. Therefore, an organic or inorganic insulator having high solubility in a solvent is required as the ink.
(5) The ink is quickly fixed on the object to be printed, and irregular bleeding does not occur on the dots.

  Therefore, when the inkjet method is applied by a printing method, a solution in which an organic insulator is dissolved in a solvent, a suspension in which a fine inorganic insulator is dispersed in a liquid, and a solution in which the inorganic insulator is dissolved in a solvent It is important that the properties satisfy the above-described requirements for ink.

  The diameter of the nozzle opening for discharging the solution and suspension is about 10 to 80 μm or smaller, which is generally used in printers. In particular, the nozzle opening for forming a wiring portion such as a conductive layer or a bonding pad desirably has a hole diameter of about 2 to 3 μm.

The material for forming the bonding pad and the conductive layer is a suspension in which fine particles of gold, aluminum, copper, indium, tin, silver, or an alloy thereof having a particle size of less than the nozzle hole, preferably 2 to 3 μm or less are dispersed. Use a suspension. As the average particle size increases, nozzle clogging and metal particle settling tend to occur.
In particular, when forming a striped electrode of a semiconductor laser element, a smooth stripe can be formed if the particle diameter is about 1/5 to 1/6 of the stripe width. For example, in the case of a stripe width of 3 μm, fine particles having a particle diameter of 0.2 to 0.6 μm are desirable.

As the film forming material for the insulating film, inorganic insulators such as alumina (Al ₂ O ₃ ), SiO ₂ , Si ₃ N ₄ , TiO x (X = 1 to 2), ZrO ₂ , MoO ₃ can be used. In the case of a suspension, inorganic insulating fine particles having the same particle size as the metal fine particles are used.
In addition, as organic insulators, heat resistance and solvent resistance typified by engineering plastics such as polyimide, polyethylene, polypropylene, polyamide, polyethylene terephthalate, melamine resin, phenol resin, epoxy resin, polyurethane, polyether ether ketone, polyarylate, etc. Resin with good properties and moldability is used.

  Examples of the solvent include alkyl alcohols having 1 to 4 carbon atoms such as methyl alcohol, ethyl alcohol, n-propyl alcohol, isopropyl alcohol, n-butyl alcohol, sec-butyl alcohol and isobutyl alcohol; acetone and diacetone alcohol, pyrrolidone Ketones or ketone alcohols such as: ethers such as tetrahydrofuran (THF) and dioxane; alkylene glycols such as ethylene glycol, propylene glycol, diethylene glycol and triethylene glycol; polyalkylene glycols such as polyethylene glycol and polypropylene glycol; ethylene glycol Monoethyl ether, propylene glycol monomethyl ether, diethylene glycol monomethyl Lower alkyl ethers of polyhydric alcohols such as ether and triethylene glycol monoethyl ether; lower alkyl ether acetates such as polyethylene glycol monomethyl ether acetate; glycerin; organic solvents such as acetamide; It is an aqueous solution to which water is added in the range of 97% by weight.

  When an insulating film, a bonding pad, a conductive layer, or the like is formed by a printing method, heat treatment is performed after film formation by an ink jet method in order to evaporate a solution solvent or a suspension liquid. In addition, in order to suppress metal oxidation, it is preferable to carry out in a vacuum of 10 to 4 Pa or less or in an inert gas atmosphere. In order to dry the formed insulating film, bonding pad, and conductive layer, heating is performed at a temperature of 40 to 100 ° C. In order to obtain the strength of the metal film such as the conductive layer, the heating temperature is preferably selected so that the metal diffusion between the metal fine particles can be promoted, for example, a temperature in the range of 140 to 600 ° C.

In a preferred embodiment of the present invention, the conductive layer is a metal layer formed by discharging a suspension in which metal fine particles are dispersed in a liquid or a solution in which a metal is dissolved in a solvent, and then evaporating the liquid or the solvent. It is formed as.
In a further preferred embodiment of the present invention, the bonding pad is a metal obtained by discharging a suspension in which fine metal particles are dispersed in a liquid or a solution in which a metal is dissolved in a solvent as droplets and then evaporating the liquid or the solvent. It is formed as a layer.

In a further preferred embodiment of the present invention, the semiconductor light emitting section is formed as a semiconductor laser element.
In this embodiment, preferably, the element isolation region is configured by an isolation groove penetrating at least the active layer from the top to the bottom of the semiconductor multilayer structure of the semiconductor laser element, and an isolation groove embedded insulating layer that embeds the isolation groove, Separation groove embedded insulating layer discharges droplets of either a solution in which an organic insulator is dissolved in a solvent, a suspension in which a fine inorganic insulator is dispersed in a liquid, or a solution in which an inorganic insulator is dissolved in a solvent Then, the insulating layer is formed by evaporating the solvent or liquid.
Further, preferably, an isolation groove embedded insulating layer in which the isolation groove is embedded is continuously formed on the insulating film on the light emitting portion, and the upper surface of the multi-beam semiconductor light emitting device is flattened.

A method of manufacturing a multi-beam semiconductor light emitting device according to the present invention includes a step of forming a compound semiconductor multilayer structure constituting a plurality of edge emitting semiconductor light emitting portions on a semiconductor substrate,
Forming a plurality of striped electrodes spaced apart for each light emitting portion on the compound semiconductor multilayer structure;
Forming a plurality of semiconductor light emitting portions by forming separation grooves for separating the compound semiconductor multilayer structure for each light emitting portion along the electrodes;
An insulating film forming step of forming an insulating film on the compound semiconductor multilayer structure including the groove wall of the separation groove while exposing the electrode, and applying the printing method when forming the insulating film, Either a solution in which an organic insulator is dissolved in a solvent, a suspension in which fine-particle inorganic insulator is dispersed in a liquid, or a solution in which an inorganic insulator is dissolved in a solvent is discharged as droplets, and then the solvent or liquid It is characterized by evaporating the film to form an insulating film.

A preferred embodiment of the method of the present invention includes a step of forming an isolation groove embedded insulating layer and embedding the isolation groove after the insulating film forming step,
When embedding the separation groove, a printing method is applied, and a solution in which an organic insulator is dissolved in a solvent, a suspension in which fine-particle inorganic insulator is dispersed in a liquid, and a solution in which the inorganic insulator is dissolved in a solvent One of them is ejected as droplets, and then the solvent or liquid is evaporated to form a separation groove embedded insulating layer, and the compound semiconductor multilayer structure is planarized.

According to a further preferred embodiment of the method of the present invention, following the step of forming the isolation trench filling insulating layer and filling the isolation trench, a step of forming a bonding pad in the outer region of the plurality of light emitting portions, and light emission from the electrodes Forming a conductive layer extending across the portion to the bonding pad and electrically connecting the electrode to the bonding pad,
When forming the bonding pad and the conductive layer, a printing method is applied, and a suspension in which metal fine particles are dispersed in a liquid or a solution in which a metal is dissolved in a solvent is ejected as droplets, and then the liquid or the solvent is evaporated. A bonding pad and a conductive layer are formed as a metal layer.
Further, in the step of forming a plurality of striped electrodes spaced apart for each light emitting portion on the compound semiconductor multilayer structure, a suspension in which metal fine particles are dispersed in a liquid or a metal is applied as a solvent by applying a printing method. It is also possible to form a striped electrode as a conductive metal layer formed by discharging a solution dissolved in a droplet and then evaporating the liquid or solvent.
Preferably, an inkjet method is used as a printing method.

In the method of the present invention, after forming a separation groove penetrating at least the active layer from the top to the bottom of the compound semiconductor multilayer structure, an insulating film exposing the electrode is patterned at once by a printing method, for example, ink jet printing. Can do. Further, the isolation groove embedded insulating layer, the bonding pad, and the conductive layer can be similarly patterned at once by a printing method such as inkjet printing. Photolithographic processing and etching process for exposing the electrodes when forming the insulating film, etching back processing for forming the isolation groove filling insulating layer, and patterning by photolithography processing and etching processing for forming the bonding pad and the conductive layer The process can be omitted. Thereby, the number of processes can be reduced and the manufacturing cost can be reduced.
According to the method of the present invention, it is possible to process a plurality of wafers of about 3 inches at a time, and it is possible to process them continuously at a rate of about 1 / min.
In addition, since the number of processes is small, process management is easy, yield can be improved, and cost can be reduced accordingly.

  Hereinafter, embodiments of the present invention will be described specifically and in detail with reference to the accompanying drawings. It should be noted that the film formation method, the composition and thickness of the compound semiconductor layer, the ridge width, the process conditions, and the like shown in the following examples are merely examples for facilitating the understanding of the present invention. It is not limited to the illustration.

Embodiment of Multibeam Semiconductor Light Emitting Device This embodiment is an example in which the multibeam semiconductor light emitting device according to the present invention is applied to a multibeam semiconductor laser device, and FIG. 1 shows the configuration of the multibeam semiconductor light emitting device. FIG. 2 is a perspective view and FIG. 2 is a cross-sectional view showing a configuration of a semiconductor laser element provided as a light emitting portion. In addition, the same code | symbol is attached | subjected to the same thing as the part shown in FIG. 11 among the parts shown in FIG.1 and FIG.2.
As shown in FIG. 1, the multi-beam semiconductor laser device 50 of the present embodiment is formed on the semiconductor substrate 16 in parallel with the emission direction via the element isolation regions 52A to 52E, and can be driven independently of each other. Are provided with four edge emitting semiconductor laser elements 14A to 14D.

  The semiconductor laser elements 14 </ b> A to 14 </ b> D are respectively covered with an insulating film 54, and the p-side electrodes 28 </ b> A to 28 </ b> D are exposed from the insulating film 54. Conductive layers 56A-D extend on insulating film 54 from p-side electrodes 28A-D to bonding pads 58A-D provided outside semiconductor laser elements 14A, 14D, and p-side electrodes 28A-D are bonded. The pads 58A to 58D are electrically connected.

  The multi-beam semiconductor laser device 50 includes the element isolation region 52, the insulating film 54, and bonding pads 58A to D, and the conductive layers 56A to D that connect the p-side electrodes 28A to 28D and the bonding pads 58A to 58D. Except for the difference, the conventional multi-beam semiconductor laser device 10 has basically the same configuration.

As shown in FIG. 2, each of the semiconductor laser elements 14 </ b> A to 14 </ b> D is formed on a common n-type GaAs semiconductor substrate 16 on the n-type Al _0.45 Ga _0.55 As first as in the conventional multi-beam semiconductor laser device 10. The cladding layer 18, the non-doped Al _0.14 Ga _0.86 As active layer 20, the p-type Al _0.45 Ga _0.55 As second cladding layer 22, the n-type GaAs current blocking layer 24 having a central region opened in a stripe shape, and the p-type (Al) A common laminated structure of the GaAs cap layer 26 is provided.

The active layer / guide layer 20 includes an Al _0.3 Ga _0.7 As guide layer having a thickness of 60 nm to 65 nm, an Al _0.14 Ga _0.86 As active layer having a thickness of 10 nm larger than the guide layer, and a thickness of 60 nm to 65 nm. It is constituted as a three-layer laminated film with an Al _0.3 Ga _0.7 As guide layer.
Each of the semiconductor laser elements 14 </ b> A to 14 </ b> D includes p-side electrodes 28 </ b> A to 28 </ b> D on the cap layer 26 above the central opening region of the current blocking layer 24.

Semiconductor laser device 14A and outer region, semiconductor laser devices 14A and 14B, semiconductor laser devices 14B and 14C, semiconductor laser devices 14C and 14D, and semiconductor laser device 14D and the outer region are separated regions provided between them. 52A to E are electrically separated.
The isolation regions 52 </ b> A to 52 </ b> E respectively include an isolation groove 30 that reaches the semiconductor substrate 16 through the cap layer 26, the current blocking layer 24, the second cladding layer 22, the active layer 20, and the first cladding 18, and the isolation groove 30. The insulating film 54 is formed on the entire surface including the trench wall, and the isolation trench embedded insulating layer 60 is formed as a buried layer of the isolation trench 30 and is flattened.

The insulating film 54 is formed by a printing method using an ink jet method, such as a solution of an organic insulating material such as polyimide in a solvent such as N, N dimethylacetamide, or a fine inorganic inorganic material having a particle size of 0.5 μm in a 50% aqueous solution of liquid ethanol. The film is formed by spraying a suspension in which an object, for example, SiO ₂ is dispersed, and evaporating the solvent or the liquid. Further, the separation groove embedding insulating layer 60 is formed by a printing method using an ink jet method, and has a particle diameter of 0.2 μm in a solvent such as N, N dimethylacetamide, an organic insulating material such as polyimide, or liquid ethanol 50% aqueous solution. The film is formed by spraying a suspension in which a fine particle inorganic insulator, for example, SiO ₂ is dispersed, and evaporating the solvent or liquid.
The insulating film 54 and the isolation groove embedded insulating layer 60 are formed by spraying a solution of an inorganic insulator, for example, a silanol compound, on a solvent, for example, a solvent containing water as a main component, and evaporating the solvent or liquid. May be.

The p-side electrodes 28 </ b> A to 28 </ b> D are exposed to the outside through a window 59 in which the insulating film 54 is opened.
Bonding pads 58A and 58B and bonding pads 58C and 58D are provided independently as connection terminals to the outside in the outer region of the semiconductor laser element 14A and the outer region of the semiconductor laser element 14D, respectively. The p-side electrodes 28A to 28D are connected to the bonding pads 58A to 58D by the conductive layer 56, respectively.
A common n-side electrode 42 is provided on the back surface of the n-type semiconductor substrate 16.

  As described above, the multi-beam semiconductor laser device 50 according to the present embodiment has a configuration in which the insulating film 54, the conductive layer 56, and the bonding pad 58 can be formed by an ink-jet printing method. The cost can be reduced.

Embodiment of Manufacturing Method of Multi-Beam Semiconductor Light Emitting Device This embodiment is an embodiment in which the manufacturing method of a multi-beam semiconductor light emitting device according to the present invention is applied to the manufacture of the above-described multi-beam semiconductor laser device. 3 (a) to 3 (c), 4 (d) to 4 (f), and 5 to 8 are diagrams for manufacturing a multi-beam semiconductor laser device according to the method of this embodiment, respectively. It is board | substrate sectional drawing for every process. 3 to FIG. 8, parts that are the same as those shown in FIG. 1, FIG. 2, and FIG. 11 to FIG.
First, as shown in FIG. 3A, on an n-type GaAs semiconductor substrate 16, an n-type Al _0.45 Ga _0.55 As first cladding layer 18, a non-doped Al _0.14 Ga _0.86 As active layer 20, and a p-type Al _0.45 Ga. _{The 0.55} As second cladding layer 22 is epitaxially grown sequentially by MOCVD (Metal Organic Chemical Vapor Deposition).

  Next, the second cladding layer 22 is etched, and as shown in FIG. 3B, stripe-shaped shallow grooves each having a predetermined width along the p-side electrodes 28A to 28D forming regions of the semiconductor laser elements 14A to 14D. 44 are formed at predetermined intervals. That is, the groove 44 is formed so that the region between the shallow groove 44 and the shallow groove 44 is positioned below the p-side electrodes 28A to 28D.

Next, an n-type GaAs semiconductor layer having a conductivity type different from that of the second cladding layer 22 is epitaxially grown on the entire surface of the substrate to fill the shallow groove 44, and then the n-type GaAs semiconductor layer is etched back to obtain FIG. As shown in FIG. 5, the current blocking layer 24 made of an n-type GaAs semiconductor layer is formed only in the shallow groove 44.
As a result, the current blocking layer 24 is formed in a parallel arrangement in stripes on the second cladding layer 22 as shown in FIG.

Next, as shown in FIG. 4D, a p-type GaAs cap layer 26 of the same conductivity type as that of the second cladding layer 22 is epitaxially grown on the entire surface of the second cladding layer 22 and the current blocking layer 24 to form a laser structure. A compound semiconductor multilayer structure is formed.
As shown in FIG. 4E, striped p-side electrodes 28A to 28D separated from each other on the cap layer 26 above the region between the adjacent current blocking layers 24 are subjected to photolithography and etching. Ohmic deposition. Note that the stripe-shaped p-side electrodes 28A to 28D can be printed by the ink jet method.

  Next, as shown in FIG. 4F, the outer region of the p-side electrode 28A, the region between the p-side electrodes 28A to 28D, and the outer region of the p-side electrode 28D are etched along the p-side electrodes 28A to 28D. Thus, the isolation grooves 30 penetrating the cap layer 26, the current blocking layer 24, the second cladding layer 22, the active layer 20, and the first cladding layer 18 are formed.

Next, in the method of this example, a printing method using an ink jet method has a particle size of 0.5 μm in a solvent, for example, a solution in which an organic insulator, for example, polyimide, is dissolved in N, N dimethylacetamide, or a liquid ethanol 50% aqueous solution. A suspension in which fine-particle inorganic insulator, for example, SiO ₂ is dispersed is sprayed on the entire surface of the substrate including the groove wall of the separation groove 30 except for the p-side electrodes 28A to 28D to evaporate the solvent or liquid. As shown in FIG. 5, an insulating film 54 having a thickness of 1 μm is formed to expose the p-side electrodes 28 </ b> A to 28 </ b> D and cover the entire surface of the substrate including the groove wall of the separation groove 30.

Subsequently, an organic insulator such as N, N dimethylacetamide in a solvent such as N, N dimethylacetamide, or a fine inorganic inorganic insulator having a particle diameter of 0.2 μm in a 50% aqueous solution of liquid ethanol, For example, a suspension in which SiO ₂ is dispersed is sprayed on the separation groove 30 to evaporate the solvent or the liquid, thereby forming the separation groove embedded insulating layer 60 and filling the separation groove 30 as shown in FIG. Flatten.
The insulating film 54 and the isolation groove embedded insulating layer 60 are formed by spraying a solution of an inorganic insulator, for example, a silanol compound, on a solvent, for example, a solvent containing water as a main component, and evaporating the solvent or liquid. May be.
Through the above steps, as shown in FIG. 7, a stacked structure in which the p-side electrodes 28 </ b> A to 28 </ b> D are covered with the insulating film 54 and the separation groove 30 is buried with the separation groove buried insulating layer 60 can be formed. it can.

Next, as shown in FIG. 8, a bonding pad 58A and a conductive layer 56A that connects the bonding pad 58A and the p-side electrode 28A are simultaneously formed in the outer region of the semiconductor laser element 14A by an inkjet printing method.
Similarly, a bonding pad 58B and a conductive layer 56B are formed. Further, the bonding pad 58C and the conductive layer 56C that connects the bonding pad 58C and the p-side electrode 28C are simultaneously formed in the outer region of the semiconductor laser element 14D by a printing method using an ink jet method. Similarly, a bonding pad 58D and a conductive layer 56D are formed.
Subsequently, the n-side electrode 42 is, for example, deposited on the entire back surface of the semiconductor substrate 16 in an ohmic manner.

In the method of this embodiment, since the ink-jet printing method is applied when forming the insulating film 54, the isolation groove embedded insulating layer 60, the conductive layer 56, and the bonding pad 58, a photolithograph like the conventional method is used. (B) Processing and etching are not required.
For example, when forming the insulating film 54, according to the conventional method, after forming the insulating film 54, it is necessary to form the opening 59 that exposes the p-side electrode 28 by photolithography and etching. In the method of this embodiment, when the insulating film 54 is formed, the insulating film 54 is printed while maintaining the pattern in which the window 59 is opened. Therefore, the photolithography process and the conventional method can be performed. Etching is not required.

In forming the isolation trench buried insulating layer 60, according to the conventional method, etch back processing is required after the formation of the isolation trench buried insulating layer. Since the isolation groove embedded insulating layer 60 is formed by printing so as to be flattened at the edge, no etch back process is required.
Furthermore, when the conductive layer 56 and the bonding pad 58 are formed, according to the conventional method, the metal layer is deposited by sputtering or the like, and then patterned by photolithography and etching. In the method, since the metal film is printed while maintaining the pattern of the conductive layer and the bonding pad, the photolithographic process and the etching process as in the conventional method are not required.
As described above, according to the method of this embodiment, the photolithography process and the etching process as in the conventional method are not required, so the number of processes is reduced, the production efficiency is increased, and the manufacturing cost is reduced. be able to.

Example 2 of multi-beam semiconductor light emitting device
This embodiment is another example of the embodiment in which the multi-beam semiconductor light emitting device according to the present invention is applied to the multi-beam semiconductor laser device. FIG. 9 is a perspective view of the multi-beam semiconductor laser device of this embodiment, and FIG. FIG. 10 is a cross-sectional view showing the configuration of each semiconductor laser element of the multi-beam semiconductor laser device of this embodiment.
As shown in FIG. 10, the multi-beam semiconductor laser device 61 of the present embodiment includes four embedded ridge-type AlGaInP-based semiconductor laser elements 62A to 62D having an oscillation wavelength band of 640 nm as light emitting portions. The multi-beam semiconductor laser device 50 of the first embodiment has the same configuration.

  As shown in FIG. 10, the semiconductor laser element 62 includes an n-type Al (Ga) InP cladding layer 66, an undoped AlGaInP optical waveguide layer 68, and an active layer sequentially formed on an n-type GaAs substrate 64 by MOCVD. Layer 70, undoped AlGaInP optical waveguide layer 72, p-type Al (Ga) InP cladding layer 74, p-type GaInP etching stop layer 76, p-type AlGaInP cladding layer 78, p-type GaInP intermediate layer 80, and p-type GaAs cap layer 82 laminated structures are provided.

As the n-type GaAs substrate 64, for example, a substrate having a main surface that is off from the {100} plane in a <110> direction by a predetermined angle, for example, about 8 ° to 16 ° is used.
The active layer 70 is configured as an MQW structure including an undoped GaInP quantum well layer and an undoped AlGaInP barrier layer.

The upper part of the laminated structure is formed as a striped ridge by etching the p-type GaAs cap layer 82, the p-type GaInP intermediate layer 80, and the p-type AlGaInP cladding layer 78 using the GaInP etching stop layer 76 as a stop layer. Yes.
On the side surface of the ridge and on the GaInP etching stop layer 76 beside the ridge, an n-type AlGaAs current confinement layer 84 is formed and buried in the ridge to form a current confinement structure.

  As an example of the thickness of each compound semiconductor layer constituting the laser structure, the film thickness of the n-type Al (Ga) InP cladding layer 66 is 1 μm, and the film thickness of the AlGaInP optical waveguide layers 68 and 72 is 50 nm, respectively. The film thickness of the GaInP quantum well layer is 5 nm, the film thickness of the AlGaInP barrier layer is 5 nm, the film thickness of the p-type Al (Ga) InP clad layer 74 is 0.15 to 0.5 μm, and the film of the p-type GaInP etching stop layer 76 The thickness is 10 to 500 nm, the thickness of the p-type AlGaInP cladding layer 78 is 0.8 μm, and the thickness of the p-type GaAs cap layer 82 is 0.3 μm.

On the p-type GaAs cap layer 82 and the n-type AlGaAs buried layer 84, for example, a Ti / Pt / Au electrode is formed as the p-side electrode 86.
Further, for example, an AuGe / Ni electrode is formed as an n-side electrode 88 on the back surface of the n-type GaAs substrate 64.

The semiconductor laser element 62A and its outer region, the semiconductor laser elements 62A and 62B, the semiconductor laser elements 62B and 62C, the semiconductor laser elements 62C and 62D, and the semiconductor laser element 62D and their outer regions are provided between them. It is electrically separated by regions 52A-E.
Each of the isolation regions 52A to 52E penetrates the current confinement layer 84, the etching stop layer 76, the p-type cladding layer 74, the optical waveguide layer 72, the active layer 70, the optical waveguide layer 68, and the n-type cladding layer 66, thereby forming a semiconductor. Separation groove 90 reaching the substrate 16, insulating film 54 formed on the entire surface including the groove wall of the separation groove 90, and isolation groove embedded insulation formed as a buried layer of the separation groove 90 and planarized Layer 60.

The insulating film 54 is formed by a printing method based on an ink jet method, and a fine inorganic inorganic material having an average particle diameter of 0.1 μm in a solution of an organic insulating material such as polyimide in a solvent such as N-methyl-2-pyrrolidone or a 50% aqueous solution of liquid ethanol. The film is formed by spraying a suspension in which an object, for example, Al ₂ O ₃ is dispersed, and evaporating the solvent or the liquid. Further, the isolation groove embedded insulating layer 60 is formed by a printing method using an ink jet method, with an average particle size of 0.1 μm in a solvent, for example, a solution of an organic insulator such as polyimide in N-methyl-2-pyrrolidone, or a 50% aqueous solution of liquid ethanol. The film is formed by spraying a suspension in which fine inorganic inorganic insulator, for example, Al ₂ O ₃ is dispersed, and evaporating the solvent or liquid.
The insulating film 54 and the isolation groove embedded insulating layer 60 are formed by spraying a solution of an inorganic insulator, for example, a silanol compound, on a solvent, for example, a solvent containing water as a main component, and evaporating the solvent or liquid. May be.

The p-side electrodes 86 </ b> A to 86 </ b> D are exposed to the outside through a window 59 that opens the insulating film 54.
Bonding pads 58A and 58B and bonding pads 58C and 58D are provided independently as connection terminals to the outside in the outer region of the semiconductor laser element 86A and the outer region of the semiconductor laser element 86D, respectively. The p-side electrodes 28A to 28D are connected to the bonding pads 58A to 58D by the conductive layer 56, respectively.
A common n-side electrode 88 is provided on the back surface of the n-type semiconductor substrate 16.

  As described above, the multi-beam semiconductor laser device 60 of the present embodiment has a configuration in which the insulating film 54, the conductive layer 56, and the bonding pad 58 can be formed by an ink-jet printing method. Can be reduced.

Example 2 of manufacturing method of multi-beam semiconductor light emitting device
The present embodiment is an embodiment in which the method for manufacturing a multi-beam semiconductor light emitting device according to the present invention is applied to the manufacture of the multi-beam semiconductor laser device described above. Although the drawings are omitted, the manufacturing method will be described below.
First, the semiconductor laser element 62 is fabricated on the n-type GaAs substrate 64 by the same method as in the prior art. That is, an n-type Al (Ga) InP cladding layer 66, an undoped AlGaInP optical waveguide layer 68, an active layer 70, an undoped AlGaInP optical waveguide layer 72, and a p-type Al are sequentially formed on the n-type GaAs substrate 64 by MOCVD. A (Ga) InP cladding layer 74, a p-type GaInP etching stop layer 76, a p-type AlGaInP cladding layer 78, a p-type GaInP intermediate layer 80, and a p-type GaAs cap layer 82 are epitaxially grown to form a stacked structure.
As the n-type GaAs substrate 64, for example, a substrate having a main surface that is off from the {100} plane in a <110> direction by a predetermined angle, for example, about 8 ° to 16 ° is used.

Next, the p-type GaAs cap layer 82, the p-type GaInP intermediate layer 80, and the p-type AlGaInP cladding layer 78 are etched using the GaInP etching stop layer 76 as a stop layer to form a striped ridge.
Next, the n-type AlGaAs current confinement layer 84 is regrown on the GaInP etching stop layer 76 on both sides of the ridge by MOCVD.
As a result, a current confinement structure in which both sides of the p-type AlGaInP cladding layer 78 of the ridge are buried with the n-type AlGaAs current confinement layer 84 can be formed.

On the p-type GaAs cap layer 82 and the n-type AlGaAs buried layer 84, striped p-side electrodes 86A to 86D made of, for example, Ti / Pt / Au electrodes are formed.
Further, after the back surface of the n-type GaAs substrate 64 is polished and adjusted to a predetermined substrate thickness, an n-side electrode 88 made of, for example, an AuGe / Ni electrode is formed on the back surface of the n-type GaAs substrate 64.

Through the above steps, a GaAs wafer having the laser structure shown in FIG. 10 can be manufactured.
Subsequently, a multi-beam semiconductor laser device is manufactured in the same manner as in Example 1. That is, although not shown, the outer region of the p-side electrode 86A, the region between the p-side electrodes 86A to 86D, and the outer region of the p-side electrode 86D are etched along the p-side electrodes 86A to 86D, respectively. 84, an etching stop layer 76, a p-type cladding layer 74, an optical waveguide layer 72, an active layer 70, an optical waveguide layer 68, and an n-type cladding layer 66 are formed to form a separation groove 90 reaching the semiconductor substrate 16.

Next, in the method of this example, an average particle size of 0.1 μm is obtained in a solvent, for example, a solution in which an organic insulator, for example, polyimide, is dissolved in N-methyl-2-pyrrolidone, or a 50% aqueous solution of liquid ethanol, by a printing method using an inkjet method. By spraying a fine particle inorganic insulator, for example, a suspension in which Al ₂ O ₃ is dispersed, on the entire surface of the substrate including the groove wall of the separation groove 90 except for the p-side electrodes 86A to 86D, the solvent or liquid is evaporated. As shown in FIG. 9, an insulating film 54 having a film thickness of 0.5 μm is formed on the entire surface of the substrate including the groove wall of the separation groove 90 while exposing the p-side electrodes 86A to 86D.

Subsequently, by an inkjet printing method, an organic insulator, for example, a solution in which polyimide is dissolved in N-methyl-2-pyrrolidone, or a fine inorganic inorganic insulator having an average particle diameter of 0.1 μm in a 50% aqueous solution of liquid ethanol, For example, a suspension in which Al ₂ O ₃ is dispersed is sprayed on the separation groove 30 to evaporate the solvent or liquid, thereby forming the separation groove embedded insulating layer 60. As shown in FIG. Embed and flatten.
The insulating film 54 and the isolation groove embedded insulating layer 60 are formed by spraying a solution of an inorganic insulator, for example, a silanol compound, on a solvent, for example, a solvent containing water as a main component, and evaporating the solvent or liquid. May be.

Next, as shown in FIG. 9, a bonding pad 58A and a conductive layer 56A that connects the bonding pad 58A and the p-side electrode 28A are simultaneously formed in the outer region of the semiconductor laser element 14A by an inkjet printing method.
Similarly, a bonding pad 58B and a conductive layer 56B are formed. Further, the bonding pad 58C and the conductive layer 56C that connects the bonding pad 58C and the p-side electrode 28C are simultaneously formed in the outer region of the semiconductor laser element 14D by a printing method using an ink jet method. Similarly, a bonding pad 58D and a conductive layer 56D are formed.
Subsequently, the n-side electrode 88 is deposited on the entire back surface of the semiconductor substrate 16 in an ohmic manner, for example.

  In the method of this embodiment, since the ink-jet printing method is applied when forming the insulating film 54, the isolation groove embedded insulating layer 60, the conductive layer 56, and the bonding pad 58, a photolithograph like the conventional method is used. (B) Processing and etching are not required. Therefore, the number of processes is reduced, production efficiency is increased, and manufacturing costs can be reduced.

  The present invention is not limited to a multi-beam semiconductor laser device, and can be applied to an apparatus having a structure in which an isolation groove is provided, an insulating film is formed, and an electrode is exposed from the insulating film.

1 is a perspective view illustrating a configuration of a multi-beam semiconductor laser device of Example 1. FIG. FIG. 3 is a cross-sectional view illustrating a configuration of a semiconductor laser element provided as a light emitting unit of the multi-beam semiconductor laser device of Example 1. FIG. 3A to FIG. 3C are cross-sectional views of the substrate for each process when manufacturing the multi-beam semiconductor laser device according to the method of the embodiment. 4 (d) to 4 (f) are substrate cross-sectional views for each process when manufacturing the multi-beam semiconductor laser device according to the method of the embodiment, following FIG. 3 (c). FIG. 5F is a cross-sectional view of the substrate for each step when manufacturing the multi-beam semiconductor laser device according to the method of the example, following FIG. FIG. 6 is a cross-sectional view of the substrate for each step when manufacturing the multi-beam semiconductor laser device according to the method of the example, following FIG. 5. FIG. 7 is a substrate perspective view of a process for manufacturing the multi-beam semiconductor laser device according to the method of the example, following FIG. 6; FIG. 8 is a perspective view of the substrate in the process for manufacturing the multi-beam semiconductor laser device according to the method of the embodiment following FIG. 7. 1 is a perspective view illustrating a configuration of a multi-beam semiconductor laser device of Example 1. FIG. FIG. 3 is a cross-sectional view illustrating a configuration of a semiconductor laser element provided as a light emitting unit of the multi-beam semiconductor laser device of Example 1. It is a perspective view which shows the structure of the conventional multibeam semiconductor laser apparatus. 12 (a) to 12 (c) are cross-sectional views of a substrate for each process when manufacturing a multi-beam semiconductor laser device according to a conventional method. FIGS. 13 (d) to 13 (f) are substrate cross-sectional views for each process in manufacturing the multi-beam semiconductor laser device according to the conventional method, following FIG. 12 (c). FIGS. 14 (g) to 14 (i) are cross-sectional views of the substrate for each process when manufacturing the multi-beam semiconductor laser device according to the conventional method, following FIG. 13 (f). It is a top view of a current block layer. It is a top view of a p-side electrode. It is a top view of the p side electrode exposed from the insulating film.

Explanation of symbols

  10: conventional multi-beam semiconductor laser device, 12A to C: element isolation region, 14: semiconductor laser element, 16: n-type GaAs semiconductor substrate, 18: n-type Al0.45Ga0.55As first cladding layer, 20: non-doped Al0 .14 Ga0.86 As active layer, 22: p-type Al0.45 Ga0.55 As second cladding layer, 24: n-type GaAs current blocking layer, 26: p-type (Al) GaAs cap layer, 28: p-side electrode, 30: isolation Groove, 32: insulating film, 34: isolation groove embedded insulating layer, 36: window, 38: conductor, 40: bonding pad, 42: n-side electrode, 44: shallow groove, 50: multi-beam semiconductor laser device of Example 1 16: n-type GaAs semiconductor substrate, 14: semiconductor laser element, 28: p-side electrode, 52: element isolation region, 54: insulating film, 56: conductive layer, 58: bonding pad, 59: , 60: isolation groove buried insulating layer, 61: multi-beam semiconductor laser device of Example 2, 62: buried ridge type AlGaInP-based semiconductor laser element having an oscillation wavelength band of 640 nm, 64: n-type GaAs substrate, 66: n-type Al (Ga) InP cladding layer, 68: undoped AlGaInP optical waveguide layer, 70: active layer, 72: undoped AlGaInP optical waveguide layer, 74: p-type Al (Ga) InP cladding layer, 76: p-type GaInP etching stop layer 78: p-type AlGaInP cladding layer, 80: p-type GaInP intermediate layer, 82: p-type GaAs cap layer, 84: n-type AlGaAs current confinement layer, 86: p-side electrode, 88: n-side electrode, 90: separation groove .

Claims (11)

A plurality of edge-emitting semiconductor light-emitting portions covered with an insulating film are arranged on the semiconductor substrate in parallel to the emission direction through the element isolation region, and one electrode of each light-emitting portion is exposed from the insulating film for each light-emitting portion. The bonding pad is provided in the outer region of the plurality of light emitting portions, and the conductive layer extends from one electrode to the bonding pad on the insulating film, and one electrode is electrically connected to the bonding pad. In the multi-beam semiconductor light emitting device
The insulating film is discharged as droplets of either a solution in which an organic insulator is dissolved in a solvent, a suspension in which a fine inorganic inorganic insulator is dispersed in a liquid, or a solution in which an inorganic insulator is dissolved in a solvent. Next, the multi-beam semiconductor light-emitting device is formed as an insulating film obtained by evaporating a solvent or a liquid.   The conductive layer is formed as a metal layer formed by discharging a suspension in which metal fine particles are dispersed in a liquid or a solution in which a metal is dissolved in a solvent, and then evaporating the liquid or the solvent. 2. The multi-beam semiconductor light-emitting device according to claim 1.   The bonding pad is formed as a metal layer formed by discharging a suspension in which metal fine particles are dispersed in a liquid or a solution in which a metal is dissolved in a solvent, and then evaporating the liquid or the solvent. 2. The multi-beam semiconductor light-emitting device according to claim 1.   4. The multi-beam semiconductor light emitting device according to claim 1, wherein the semiconductor light emitting unit is formed as a semiconductor laser element. 5. The element isolation region is composed of an isolation groove that penetrates at least the active layer from the top to the bottom of the compound semiconductor multilayer structure of the semiconductor laser element, and an isolation groove embedded insulating layer that embeds the isolation groove,
Separation groove embedded insulating layer discharges droplets of either a solution in which an organic insulator is dissolved in a solvent, a suspension in which a fine inorganic insulator is dispersed in a liquid, or a solution in which an inorganic insulator is dissolved in a solvent The multi-beam semiconductor light-emitting device according to claim 4, wherein the multi-beam semiconductor light-emitting device is formed as an insulating layer obtained by evaporating a solvent or a liquid.   6. The multi-beam semiconductor light-emitting device according to claim 5, wherein the isolation trench-filling insulating layer is continuously formed on the insulating film on the light-emitting portion, and the upper surface of the semiconductor light-emitting device is flattened. Forming a compound semiconductor laminated structure constituting a plurality of edge-emitting semiconductor light emitting portions on a semiconductor substrate;
Forming a plurality of striped electrodes spaced apart for each light emitting portion on the compound semiconductor multilayer structure;
Forming a plurality of semiconductor light emitting portions by forming separation grooves for separating the compound semiconductor multilayer structure for each light emitting portion along the electrodes;
An insulating film forming step of forming an insulating film on the compound semiconductor multilayer structure including the groove wall of the separation groove while exposing the electrode, and applying the printing method when forming the insulating film, Either a solution in which an organic insulator is dissolved in a solvent, a suspension in which fine-particle inorganic insulator is dispersed in a liquid, or a solution in which an inorganic insulator is dissolved in a solvent is discharged as droplets, and then the solvent or liquid A method of manufacturing a multi-beam semiconductor light-emitting device, wherein an insulating film is formed by evaporating the substrate. Subsequent to the insulating film forming step, the method includes forming a separation groove embedded insulating layer and embedding the separation groove,
When embedding the separation groove, a printing method is applied, and a solution in which an organic insulator is dissolved in a solvent, a suspension in which fine-particle inorganic insulator is dispersed in a liquid, and a solution in which the inorganic insulator is dissolved in a solvent 8. The multi-beam semiconductor light emitting device according to claim 7, wherein any one of them is ejected as droplets, and then a solvent or liquid is evaporated to form a separation groove embedded insulating layer, thereby planarizing the compound semiconductor laminated structure. Device manufacturing method. Following the step of depositing the isolation trench embedding insulating layer and embedding the isolation trench, a step of forming a bonding pad in the outer region of the plurality of light emitting portions, and an electrode extending from the electrode to the bonding pad on the insulating film, Forming a conductive layer electrically connected to the bonding pad,
When forming the bonding pad and the conductive layer, a printing method is applied, and a suspension in which metal fine particles are dispersed in a liquid or a solution in which a metal is dissolved in a solvent is ejected as droplets, and then the liquid or the solvent is evaporated. 9. The method of manufacturing a multi-beam semiconductor light emitting device according to claim 8, wherein a bonding pad and a conductive layer are formed as the conductive metal layer.   In the step of forming a plurality of stripe-shaped electrodes spaced apart for each light emitting part on the compound semiconductor multilayer structure, a printing method is applied and a suspension in which metal fine particles are dispersed in a liquid or a metal is dissolved in a solvent. 9. The method of manufacturing a multi-beam semiconductor light emitting device according to claim 8, wherein a striped electrode is formed as a conductive metal layer formed by discharging the solution as droplets and then evaporating the liquid or solvent.   The method for manufacturing a multi-beam semiconductor light-emitting device according to claim 7, wherein an inkjet method is used as a printing method.

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