JP2005011890A - Metal substrate member for ic card module and method of manufacturing ic card module - Google Patents

Metal substrate member for ic card module and method of manufacturing ic card module Download PDF

Info

Publication number
JP2005011890A
JP2005011890A JP2003172221A JP2003172221A JP2005011890A JP 2005011890 A JP2005011890 A JP 2005011890A JP 2003172221 A JP2003172221 A JP 2003172221A JP 2003172221 A JP2003172221 A JP 2003172221A JP 2005011890 A JP2005011890 A JP 2005011890A
Authority
JP
Japan
Prior art keywords
metal substrate
chip
substrate member
die pad
unit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2003172221A
Other languages
Japanese (ja)
Other versions
JP4357885B2 (en
Inventor
Masachika Masuda
正親 増田
Chikao Ikenaga
知加雄 池永
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dai Nippon Printing Co Ltd
Original Assignee
Dai Nippon Printing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dai Nippon Printing Co Ltd filed Critical Dai Nippon Printing Co Ltd
Priority to JP2003172221A priority Critical patent/JP4357885B2/en
Priority to KR1020057001936A priority patent/KR101030899B1/en
Priority to PCT/JP2004/008534 priority patent/WO2004112133A1/en
Publication of JP2005011890A publication Critical patent/JP2005011890A/en
Priority to US11/086,238 priority patent/US7271471B2/en
Application granted granted Critical
Publication of JP4357885B2 publication Critical patent/JP4357885B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07745—Mounting details of integrated circuit chips
    • G06K19/07747—Mounting details of integrated circuit chips at least one of the integrated circuit chips being mounted as a module
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
    • G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
    • G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
    • G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
    • G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
    • G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
    • G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a metal substrate member with which an IC module for non-contact IC card can be manufactured with sufficient productivity. <P>SOLUTION: A member used for the module for the IC card of a transfer mold type is etched/formed on a metallic thin band-like work material 111 in a state where respective parts of metal substrates 120 in a unit are held by connection parts 126. A die pad 121 for loading an IC chip by turning a terminal face up and antenna terminals 122A and 122B for connecting to an antenna coil are arranged on a side outer than the die pad and a resin sealing region across the die pad. Antenna terminal regions of the unit metal substrates adjacent in a longitudinal direction of the material are overlapped as a common region. Outer shapes of the respective unit metal substrates are worked so that they are resin-sealed only by cutting prescribed width in the longitudinal direction of the material on the outer side, and the desired outer shape can be separated. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【０００１】
【発明の属する技術分野】
本発明は、非接触型のＩＣカードに用いられるトランスファーモールドタイプのＩＣカードモジュール用のメタルサブストレート部材と、該メタルサブストレート部材を用いた非接触型のＩＣカードに用いられるトランスファーモールドタイプのＩＣカードモジュールに関する。
【０００２】
【従来の技術】
情報の機密性の面からＩＣカードが次第に普及されつつ中、近年では、読み書き装置（リーダライタ）と接触せずに情報の授受を行う非接触型のＩＣカードが提案され、中でも、外部の読み書き装置との信号交換を、あるいは信号交換と電力供給とを電磁波により行う方式のものが実用化されつつある。
このような非接触式のＩＣカードにおいては、例えば、図８（ａ）に示すように、ＩＣモジュール８１２は、アンテナ８１１に接続されており、その回路構成は、通常、図８（ｂ）のようになっている。
図８において、８１０はＩＣカード、８１１はアンテナ、８１２はＩＣモジュール、８１３は（ＩＣモジュールの）端子である。
このようなＩＣチップモジュールにおけるＩＣチップの実装方法としては、プリント基板にＩＣチップをマウントし、ボンディング線にてプリント基板上へ接続するＣＯＢ（Ｃｈｉｐ Ｏｎ Ｂｏａｒｄ）が最も多く用いられているが、この方法では実装厚を薄くできないという欠点があり、最近では、実装厚を薄くでき、量産にも対応できる実装形態として、導電性のダイパッドをハーフエッチングしたメタルサブストレート上にＩＣチップをマウントし、ボンディング線にてメタルサブストレートの端子部へ接続する形態も提案されている。
このような形態のＩＣチップモジュールにおいては、単位のメタルサブストレートは、ＩＣチップを搭載するための領域（ダイパッド部）、アンテナ回路との接続用の領域や入出力端子の領域等、複数の領域に一部繋がった状態で分割形成されているのが普通で、その作製においては、これらの領域を繋ぎ部で加工用素材に接続し、且つ、単位のメタルサブストレートを多面付けしており、各単位のメタルサブストレートにＩＣチップを搭載して樹脂封止した後に、所定の繋ぎ部を切断分離する。
単位のメタルサブストレートをリードあるいはリードフレームと言う場合もあり、また、単位のメタルサブストレートが多面付けされ、加工用素材に直接、あるいは枠部を設けて枠部に、繋ぎ部で繋がった状態のものを、リードフレームと言う場合もある。
【０００３】
このような、メタルサブストレートをプレスにて作製すると、プレス加工時にバリ９１１が発生し、図９（ａ）に示すように、樹脂封止した場合、裏面への樹脂漏れ９３１が発生してしまうため、エッチング加工方法が採られるが、エッチング加工方法による場合には、図９（ｂ）に示すように、樹脂漏れを起こさずに封止ができる。
尚、図９において、９１０はメタルサブストレート、９２０はＩＣチップ、９３０は封止用樹脂、９３１は樹脂漏れ、９４０はボンディングワイヤである。
エッチング加工方法においては、薄いＣｕ材、あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）を用い、通常、製版処理、エッチング処理をリール・トウー・リールで行う、リール方式が、その生産性の面から採られている。
そして、面付けしてエッチング加工後、面付け状態のまま、順に、銀メッキ処理あるいは全面パラジュームめっき処理、ＩＣチップマウント、ワイヤボンディング、個別樹脂封止等の処理を、連続して、あるいは、分けて、リール方式で行う。
そして、従来、エッチング加工により、ＩＣモジュール用のメタルサブストレートを面付けして、リール方式で作製する場合、図７（ａ）に示すように、１面毎に、その絵柄がオーバラップしないように配列して作製していた。
尚、図７（ｂ）は、図７（ａ）のように面付けされてエッチングされた、メタルサブストレート部材の各ダイパッド部６２１にＩＣチップを搭載し、更にトランスファー方式で樹脂封止した状態を示している。
この後、所定の位置をカットすることにより、個片化する。
図７において、６１１は加工用素材、６２０は単位のメタルサブストレート、６２１はダイパッド、６２１Ｈはハーフエッチング部、６２２Ａ、６２２Ｂは（アンテナと接続する）端子、６２５は貫通孔部、６２６は繋ぎ部、６２８はスプロケット、６４０は封止用樹脂である。
【０００４】
【特許文献１】
特開２０００−１７４１７６号公報
【０００５】
【発明が解決しようとする課題】
上記のように、最近、ＩＣモジュール用にメタルサブストレートを用いる形態が提案され、エッチング加工により、ＩＣモジュール用のメタルサブストレートを面付けして、リール方式で作製する作製方法が知られているが、特に、非接触型のＩＣカード用のＩＣモジュールにおいては、更なる、量産化、低コスト化が求められていた。
本発明は、これらに対応するもので、非接触型のＩＣカード用のＩＣモジュールを、更に、量産性良く製造できる、メタルサブストレート部材を提供しようとするものである。
【０００６】
【課題を解決するための手段】
本発明のＩＣカードモジュール用のメタルサブストレート部材は、トランスファモールドタイプの非接触型ＩＣカード用のＩＣカードモジュールに用いられる単位のメタルサブストレートを、多数配列したメタルサブストレート部材であって、金属からなる帯状の薄い加工用素材に単位のメタルサブストレートの各部を繋ぎ部で保持した状態で、エッチング形成されたものであり、単位のメタルサブストレートは、端子面を上側にしてＩＣチップを搭載するためのダイパッドを有し、アンテナコイルと接続するためのアンテナ端子を、ダイパッドおよび樹脂封止領域よりも外側に、アンテナコイル１ループ用として２個あるいはアンテナコイル２ループ用として４個を、前記帯状の加工用素材の長手方向でダイパッドを跨ぎ、それぞれ配するもので、前記帯状の加工用素材の長手方向に隣接する単位のメタルサブストレート同志のアンテナ端子部領域を、共通領域としてオーバラップして、単位のメタルサブストレートを、加工用素材の長手方向に面付けしており、且つ、各単位のメタルサブストレートは、その外側（２箇所）において加工用素材の長手方向に所定幅のカットを入れるだけで、樹脂封止した後に所望の外形が分離できるように、外形加工されていることを特徴とするものである。
そして、上記に記載のメタルサブストレート部材であって、端子面を上側にしてＩＣチップを搭載するための、ＩＣチップより大サイズのダイパッドを有し、該ダイパッドのＩＣチップ搭載領域はハーフエッチングにて、メタルサブストレートの基材厚よりも薄く形成されていることを特徴とするものである。
そしてまた、上記のいずれかに記載のメタルサブストレート部材であって、ダイパッド領域の外側に、封止樹脂の密着性を向上させるための凹部を配し、前記アンテナ端子と一体的に接続するる内部端子を設けていることを特徴とするものである。
また、上記いずれかに記載のメタルサブストレート部材であって、加工用素材はＣｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）からなることを特徴とするものである。
尚、上記において、金属からなる帯状の薄い加工用素材の厚さは、ＩＣモジュールの薄化要求に対応できる厚さであれば良く、０． １ｍｍ厚程度の薄いものが、特に、薄化要求からは、好ましい。
【０００７】
本発明のＩＣカードモジュールの作製方法は、非接触型のＩＣカードに用いられるトランスファモールドタイプのＩＣカードモジュールの作製方法であって、金属からなる薄い加工用素材に対して、リール・トウー・リールで、製版処理、エッチング処理を行い、請求項１ないし３のいずれか１項に記載のメタルサブストレート部材を、形成するエッチング加工工程を行った後、以下、リール・トウー・リールで、順に、（ａ）前記メタルサブストレート部材の各単位のメタルサブストレートに対し、その所定の領域に銀メッキ処理またはその全面にパラジュームめっき処理を施す、めっき処理工程と、（ｂ）前記メタルサブストレート部材の各単位のメタルサブストレートのダイパッド上に、ＩＣチップを搭載するＩＣチップマウント工程と、（ｃ）前記メタルサブストレート部材の各単位のメタルサブストレートの所定の内部端子とＩＣチップとをワイヤボンディング接続するワイヤボンディング工程と、（ｄ）トランスファ方式により、ＩＣチップ、ボンデインングワイヤを含み所定領域を樹脂封止する樹脂封止工程と、（ｅ）所定のカッターにて個片化する個片化工程とを行うことを特徴とするものである。
そして、上記に記載のＩＣカードモジュールの作製方法において、加工用素材はＣｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）からなることを特徴とするものである。
【０００８】
【作用】
本発明のＩＣカードモジュール用のメタルサブストレート部材は、このような構成にすることにより、非接触型のＩＣカード用のＩＣモジュールを、更に、量産性良く製造できる、メタルサブストレート部材の提供を可能としている。
具体的には、単位のメタルサブストレートは、端子面を上側にしてＩＣチップを搭載するためのダイパッドを有し、そのアンテナコイルと接続するためのアンテナ端子を、ダイパッドおよび樹脂封止領域よりも外側に、アンテナコイル１ループ用として２個あるいはアンテナコイル２ループ用として４個を、前記帯状の加工用素材の長手方向でダイパッドを跨ぎ、それぞれ配するもので、前記帯状の加工用素材の長手方向に隣接する単位のメタルサブストレート同志のアンテナ端子部領域を、共通領域としてオーバラップして、単位のメタルサブストレートを、加工用素材の長手方向に面付けしており、且つ、各単位のメタルサブストレートは、その外側（２箇所）において加工用素材の長手方向に所定幅のカットを入れるだけで、樹脂封止した後に所望の外形が分離できるように、外形加工されていることにより、これを達成している。
詳しくは、本発明のＩＣカードモジュール用のメタルサブストレート部材を、リール・トウー・リールで、製版処理、エッチング処理を行い作製することを可能とし、更に、本発明のＩＣカードモジュール用のメタルサブストレート部材を用いて、ＩＣカードモジュールを、量産性良く、リール・トウー・リールで各処理を行うことを可能としている。
【０００９】
また、端子面を上側にしてＩＣチップを搭載するための、ＩＣチップより大サイズのダイパッドを有し、該ダイパッドのＩＣチップ搭載領域はハーフエッチングにて、メタルサブストレートの基材厚よりも薄く形成されていることにより、特に、ＩＣモジュールを薄型化要求に対応できるものとしている。
また、金属からなる帯状の薄い加工用素材としては、導電性、処理性、汎用性等から、通常は、Ｃｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）が用いられるが、これらに限定はされない。
尚、先にも述べたが、金属からなる帯状の薄い加工用素材の厚さは、ＩＣモジュールの薄化要求に対応できる厚さであれば良く、０． １ｍｍ厚程度の薄いものが、特に、薄化要求からは、好ましい。
また、ダイパッド領域の外側に、封止樹脂の密着性を向上させるための凹部を配し、前記アンテナ端子と一体的に接続する封止用樹脂支持部を設けていることにより、樹脂封止を信頼性の良いものとしている。
【００１０】
本発明のＩＣカードモジュールの作製方法は、このような構成にすることにより、非接触型のＩＣカード用のＩＣモジュールを、量産性良く製造できるものとしている。
即ち、各処理をリール・トウー・リールで行うことにより、これを達成している。
先にも述べたが、金属からなる帯状の薄い加工用素材としては、導電性、処理性、汎用性等から、通常は、Ｃｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）が用いられるが、これらに限定はされない。
【００１１】
【発明の実施の形態】
本発明のＩＣカードモジュール用のメタルサブストレート部材の実施の形態例を図に基づいて説明する。
図１（ａ）は本発明のＩＣカードモジュール用のメタルサブストレート部材の実施の形態の第１の例の一部を示した概略構成図で、図１（ｂ）は図１（ａ）における単位のメタルルサブストレートを示した図で、図２（ａ）は図１（ａ）に示すＩＣカードモジュール用のメタルサブストレート部材の各単位のメタルサブストレートのダイパッド上にＩＣチップを搭載し、ワイヤボンディング結線した図で、図２（ｂ）は図２（ａ）における単位のメタルサブストレート部を示した図で、図３は図２（ａ）に示す部材にトランスファモールド処理を施した図で、図４は本発明のＩＣカードモジュール用のメタルサブストレート部材の実施の形態の第２の例の一部を示した概略構成図で、図５は図４に示すＩＣカードモジュール用のメタルサブストレート部材の各単位のメタルサブストレートのダイパッド上にＩＣチップを搭載し、ワイヤボンディング結線した図で、図６は図５に示す部材にトランスファモールド処理を施した図である。
図１〜図６において、１１１は加工用素材、１２０は単位のメタルサブストレート、１２１はダイパッド、１２１Ｈはハーフエッチング部、１２２Ａ、１２２Ｂは（アンテナと接続する）端子、１２３Ａ、１２３Ｂは内部端子、１２４は貫通孔、１２５は貫通孔部、１２６は繋ぎ部、１２８はスプロケット、１３０はＩＣチップ、１３１は端子、１３５はボンディングワイヤ、１４０は封止用樹脂、２２１はダイパッド、２２１Ｈはハーフエッチング部、２２２Ａ、２２２Ｂ、２２２Ｃ、２２２Ｄは（アンテナと接続する）端子、２２３Ａ、２２３Ｂ、２２３Ｃ、２２３Ｄは内部端子、２２５は貫通孔部、２２６は繋ぎ部、２２８はスプロケット、２３０はＩＣチップ、２３１は端子、２３５はボンディングワイヤ、２４０は封止用樹脂である。
【００１２】
本発明のＩＣカードモジュール用のメタルサブストレート部材の実施の形態の第１の例を、図１に基づいて説明する。
第１の例のＩＣカードモジュール用のメタルサブストレート部材は、トランスファモールドタイプの非接触型ＩＣカード用のＩＣカードモジュールで、アンテナを１ループで配するＩＣモジュールに用いられる単位のメタルサブストレート１２０（図１（ｂ）参照）を、多数配列したメタルサブストレート部材で、導電性の金属からなる帯状の薄い加工用素材に単位のメタルサブストレート１２０の各部を繋ぎ部１２６で保持した状態で、エッチング形成されたものである。
単位のメタルサブストレート１２０は、図１（ｂ）に示すように、端子面を上側にしてＩＣチップを搭載するためのダイパッド１２１を有し、アンテナコイル（図示していない）と接続するためのアンテナ端子１２２Ａ、１２２Ｂを、ダイパッド１２１および樹脂封止領域よりも外側に、アンテナコイル１ループ用として２個を、前記帯状の加工用素材１１１の長手方向でダイパッド１２１を跨ぎ、それぞれ配するもので、帯状の加工用素材１１１の長手方向に隣接する単位のサブストレート同志のアンテナ端子部領域１２２Ａ、１２２ｂを、共通領域としてオーバラップして、単位のサブストレート１２０を、加工用素材１１１の長手方向に面付けしている。
そして、各単位のメタルサブストレート１２０は、図１（ｂ）のＬ１、Ｌ２に示す、外側（２箇所）において、加工用素材１１１の長手方向に所定幅のカットを入れるだけで、樹脂封止した後に所望の外形が分離できるように、外形加工されている。
本例では、ダイパッド領域の外側に、封止樹脂の密着性を向上させるための貫通孔１２４を配し、アンテナ端子１２２Ａ、１２２Ｂと、それぞれ、一体的に接続する内部端子１２３Ａ、１２３Ｂを設けている。
【００１３】
加工用素材としては、通常は、Ｃｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）が、導電性や処理性、処理性、汎用性から用いられるが、これらに限定はされない。
金属からなる帯状の薄い加工用素材の厚さは、ＩＣモジュールの薄化要求に対応できる厚さであれば良い。
【００１４】
第１の例の変形例としては、端子面を上側にしてＩＣチップを搭載するための、ＩＣチップより大サイズのダイパッドを有し、該ダイパッドのＩＣチップ搭載領域はハーフエッチングにて、メタルサブストレートの基材厚よりも薄く形成されているものが挙げられる。
この変形例の場合は、薄型化を第１の例より一層可能とする。
【００１５】
本発明のＩＣカードモジュール用のメタルサブストレート部材の実施の形態の第２の例を、図２に基づいて、簡単に説明する。
第２の例は、トランスファモールドタイプの非接触型ＩＣカード用のＩＣカードモジュールで、アンテナコイルを２ループで配するＩＣモジュールに用いられる単位のメタルサブストレートを、多数配列したメタルサブストレート部材で、導電性の金属からなる帯状の薄い加工用素材に単位のメタルサブストレートの各部を繋ぎ部で保持した状態で、エッチング形成されたものである。
第２の例においては、端子面を上側にしてＩＣチップを搭載するための、ＩＣチップより大サイズのダイパッドを有し、該ダイパッドのＩＣチップ搭載領域はハーフエッチングにて、メタルサブストレートの基材厚よりも薄く形成されている。
この第２の例の場合も、薄型化を第１の例より一層可能とする。
尚、図４では、加工用素材の長手方向に隣接する単位のメタルサブストレート２個の状態を拡大して示したものである。
図４において、単位のメタルサブストレートは、ダイパッド２２１、アンテナ端子２２２Ａ、２２２Ｂ、２２２Ｃ、２２２Ｄ、内部端子２２３Ａ、２２３Ｂ、２２３Ｃ、２２３Ｄと、これらを加工用素材に連結するための繋ぎ部２２６からなり、加工用素材の長手方向に隣接する単位のサブストレート同志のアンテナ端子部領域を、共通領域としてオーバラップして、単位のめたるサブストレートを、加工用素材の長手方向に面付けしている。
第２の例は、アンテナコイル２ループ用のもので、アンテナ端子を４個を、長手方向でダイパッド２２１を跨ぎ、それぞれ２個ずつ配するものである。
【００１６】
尚、第２の例では、第１の例のように、内部端子に貫通孔（図１の１２４に相当）を設けていないが、適宜設けても良い。
【００１７】
次に、本発明のＩＣカードモジュールの作製方法の１例を、図１〜図３に基づいて簡単に説明する。
本例のＩＣカードモジュールの作製方法は、図１に示す第１の例のメタルサブストレート部材を用いて作製するものである。
本例は、非接触型のＩＣカードに用いられるトランスファモールドタイプのＩＣカードモジュールの作製方法で、金属からなる薄い加工用素材に対し、リール・トウー・リールで、製版処理、エッチング処理を行い、図１に示す第１の例のメタルサブストレート部材を形成する。（図１）
加工用素材としては、通常、厚さ０． １ｍｍ程度の帯状のＣｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）材を用い、製版処理により、その両面に耐エッチング性のレジストパターンを形成した後、所定のエッチング液を用い、両面からスプレーエッチングを行い、メタルサブストレート部材をエッチング形成する。
尚、ハーフエッチングをより精度良く行うために、エッチングを２段に分け、ハーフエッチング形成面側に第１のエッチングを行った後、所定の充填材をエッチング形成された孔部に埋め込んだ状態で、反対側から第２のエッチングを行う方法を採っても良い。
次いで、リール・トウー・リールで、エッチング形成されたメタルサブストレート部材（図１（ａ））の各単位のメタルサブストレートの所定の領域に銀メッキ処理を施し、メタルサブストレート部材の各単位のメタルサブストレートのダイパッド上に、ＩＣチップを搭載する。 メタルサブストレートの所定の領域への銀メッキ処理に代え、メタルサブストレートの全面にパラジュームめっきを施しても良い。
この後、ＩＣチップの端子（図示していない）と内部端子（図１の１２３Ａ、１２３Ｂに相当）とをワイヤボンディング接続しておく。（図２（ａ））
次いで、トランスファ方式により、ＩＣチップ、ボンデインングワイヤを含み所定領域を樹脂封止する。（図３）
この後、所定のカッターにて、図１（ｂ）のラインＬ１、Ｌ２に沿い、繋ぎ部１２６を切断し、個片化し、それぞれ、ＩＣモジュールとして得る。
【００１８】
上記の方法において、メタルサブストレート部材として、図４に示す第２の例のメタルサブストレート部材を用いた場合も、同様に、リール・トウー・リールで、エッチング形成されたメタルサブストレート部材（図４）の各単位のメタルサブストレートの所定の領域に銀メッキ処理を施し、メタルサブストレート部材の各単位のメタルサブストレートのダイパッド上に、ＩＣチップを搭載した後、ワイヤボンディング接続し（図５）、トランスファ方式により、ＩＣチップ、ボンデインングワイヤを含み所定領域を樹脂封止する。（図６）
そして、この後、所定のカッターにて、図４のＬ３、Ｌ４に沿い、繋ぎ部２２６を切断し、個片化し、それぞれ、ＩＣモジュールとして得る。
【００１９】
【発明の効果】
本発明は、上記のように、非接触型のＩＣカード用のＩＣモジュールを、更に、量産性良く製造できる、メタルサブストレート部材の提供を可能とした。
同時に、そのような、メタルサブストレート部材を用いたＩＣモジュールの作製方法の提供を可能とした。
【図面の簡単な説明】
【図１】図１（ａ）は本発明のＩＣカードモジュール用のメタルサブストレート部材の実施の形態の第１の例の一部を示した概略構成図で、図１（ｂ）は図１（ａ）における単位のメタルルサブストレートを示した図である。
【図２】図２（ａ）は図１（ａ）に示すＩＣカードモジュール用のメタルサブストレート部材の各単位のメタルサブストレートのダイパッド上にＩＣチップを搭載し、ワイヤボンディング結線した図で、図２（ｂ）は図２（ａ）における単位のメタルサブストレート部を示した図である。
【図３】図２（ａ）に示す部材にトランスファモールド処理を施した図である。
【図４】本発明のＩＣカードモジュール用のメタルサブストレート部材の実施の形態の第２の例の一部を示した概略構成図である。
【図５】図４に示すＩＣカードモジュール用のメタルサブストレート部材の各単位のメタルサブストレートのダイパッド上にＩＣチップを搭載し、ワイヤボンディング結線した図である。
【図６】図５に示す部材にトランスファモールド処理を施した図である。
【図７】従来のメタルサブストレートとＩＣモッジュールの作製方法を説明するための図である。
【図８】非接触式のＩＣカードにおけるＩＣモジュールとその回路構成を説明するための図である。
【図９】メタルサブストレートの加工方法と樹脂漏れとの関係を説明するための図である。
【符号の説明】
１１１ 加工用素材
１２０ 単位のメタルサブストレート
１２１ ダイパッド
１２１Ｈ ハーフエッチング部
１２２Ａ、１２２Ｂ （アンテナと接続する）端子
１２３Ａ、１２３Ｂ 内部端子
１２４ 貫通孔
１２５ 貫通孔部
１２６ 繋ぎ部
１２８ スプロケット
１３０ ＩＣチップ
１３１ 端子
１３５ ボンディングワイヤ
１４０ 封止用樹脂
２２１ ダイパッド
２２１Ｈ ハーフエッチング部
２２２Ａ、２２２Ｂ、２２２Ｃ、２２２Ｄ （アンテナと接続する）端子
２２３Ａ、２２３Ｂ、２２３Ｃ、２２３Ｄ 内部端子
２２５ 貫通孔部
２２６ 繋ぎ部
２２８ スプロケット
２３０ ＩＣチップ
２３１ 端子
２３５ ボンディングワイヤ
２４０ 封止用樹脂[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a metal substrate member for a transfer mold type IC card module used for a non-contact type IC card, and a transfer mold type IC used for a non-contact type IC card using the metal substrate member. The card module.
[0002]
[Prior art]
In recent years, IC cards have been gradually spread from the aspect of information confidentiality, and in recent years, non-contact type IC cards that exchange information without contacting a reader / writer have been proposed. A system in which signal exchange with an apparatus or signal exchange and power supply is performed by electromagnetic waves is being put into practical use.
In such a non-contact type IC card, for example, as shown in FIG. 8 (a), the IC module 812 is connected to an antenna 811, and its circuit configuration is usually as shown in FIG. 8 (b). It is like that.
In FIG. 8, 810 is an IC card, 811 is an antenna, 812 is an IC module, and 813 is a terminal (of the IC module).
As a method for mounting an IC chip in such an IC chip module, COB (Chip On Board) in which an IC chip is mounted on a printed circuit board and connected to the printed circuit board by a bonding line is most often used. This method has the disadvantage that the mounting thickness cannot be reduced. Recently, as a mounting form that can reduce the mounting thickness and accommodate mass production, an IC chip is mounted on a metal substrate half-etched with a conductive die pad and bonded. A form of connecting to a terminal portion of a metal substrate with a wire has also been proposed.
In such an IC chip module, the unit metal substrate has a plurality of areas such as an area for mounting an IC chip (die pad portion), an area for connection to an antenna circuit, and an area for input / output terminals. It is usually divided and formed in a state of being partly connected to each other, and in its production, these regions are connected to the processing material at the connecting part, and the unit metal substrate is multifaceted, An IC chip is mounted on each unit metal substrate and sealed with resin, and then a predetermined connecting portion is cut and separated.
In some cases, the unit metal substrate is called a lead or lead frame, and the unit metal substrate is multi-faced and connected to the processing material directly or to the frame part by connecting it to the frame part. May be referred to as a lead frame.
[0003]
When such a metal substrate is manufactured by pressing, burrs 911 are generated during pressing, and as shown in FIG. 9A, when resin sealing is performed, resin leakage 931 to the back surface occurs. Therefore, an etching method is employed. However, in the case of the etching method, as shown in FIG. 9B, sealing can be performed without causing resin leakage.
In FIG. 9, 910 is a metal substrate, 920 is an IC chip, 930 is a sealing resin, 931 is a resin leak, and 940 is a bonding wire.
In the etching processing method, a thin Cu material or a 42 alloy (42% Ni-Fe alloy) is used, and a reel method, in which a plate making process and an etching process are usually performed by a reel-to-reel, is from the viewpoint of productivity. It is taken.
Then, after imposition and etching, the processes such as silver plating or full-scale palladium plating, IC chip mounting, wire bonding, individual resin sealing, etc. are sequentially or separately in the imposition state. The reel method is used.
Conventionally, when a metal substrate for an IC module is faced by etching and manufactured by a reel method, as shown in FIG. 7A, the pattern does not overlap on each side. It was prepared by arranging in a row.
7B shows a state in which an IC chip is mounted on each die pad portion 621 of the metal substrate member, which has been surface-etched and etched as shown in FIG. 7A, and is further resin-sealed by a transfer method. Is shown.
Then, it cuts into pieces by cutting a predetermined position.
In FIG. 7, 611 is a processing material, 620 is a unit metal substrate, 621 is a die pad, 621H is a half-etched portion, 622A and 622B are terminals (connected to an antenna), 625 is a through-hole portion, and 626 is a connecting portion. , 628 are sprockets, and 640 is a sealing resin.
[0004]
[Patent Document 1]
Japanese Patent Laid-Open No. 2000-174176
[Problems to be solved by the invention]
As described above, recently, a form using a metal substrate for an IC module has been proposed, and a manufacturing method is known in which a metal substrate for an IC module is surfaced by etching and manufactured by a reel method. However, particularly in the case of an IC module for a non-contact type IC card, further mass production and cost reduction have been demanded.
This invention respond | corresponds to these, and it aims at providing the metal substrate member which can manufacture the IC module for non-contact-type IC cards with further mass-productivity.
[0006]
[Means for Solving the Problems]
A metal substrate member for an IC card module of the present invention is a metal substrate member in which a large number of unit metal substrates used in an IC card module for a transfer mold type non-contact type IC card are arranged. The unit metal substrate is formed by etching while holding each part of the unit metal substrate at the connecting part on a thin strip-shaped processing material consisting of an IC chip with the terminal surface facing upward Two antenna terminals for the antenna coil 1 loop or four antenna terminals for the antenna coil loop, outside the die pad and the resin-sealed region. Cross the die pad in the longitudinal direction of the strip-shaped processing material, and arrange each Therefore, the antenna terminal portion regions of the unit metal substrates adjacent to each other in the longitudinal direction of the strip-shaped processing material overlap as a common region so that the unit metal substrate faces the longitudinal direction of the processing material. In addition, the metal substrate of each unit can be separated from the desired outer shape after sealing with a resin just by making a predetermined width cut in the longitudinal direction of the processing material on the outside (two locations). In addition, the outer shape is processed.
The metal substrate member described above has a die pad larger in size than the IC chip for mounting the IC chip with the terminal surface facing upward, and the IC chip mounting area of the die pad is half-etched. Thus, it is characterized by being formed thinner than the thickness of the metal substrate.
Further, in the metal substrate member according to any one of the above, a recess for improving the adhesiveness of the sealing resin is disposed outside the die pad region, and is integrally connected to the antenna terminal. An internal terminal is provided.
Further, in any of the above metal substrate members, the processing material is made of a Cu material or a 42 alloy (42% Ni—Fe alloy).
In the above, the thickness of the thin strip-shaped processing material made of metal may be any thickness as long as it can meet the demand for thinning the IC module. A thin one having a thickness of about 1 mm is particularly preferable from the viewpoint of thinning.
[0007]
An IC card module manufacturing method according to the present invention is a transfer mold type IC card module used for a non-contact type IC card, which is a reel-to-to-reel for a thin processing material made of metal. Then, after performing the plate making process and the etching process, and performing the etching process step for forming the metal substrate member according to any one of claims 1 to 3, hereinafter, in order of reel to toe reel, (A) a plating process for applying a silver plating process to the predetermined region or a palladium plating process on the entire surface of the metal substrate of each unit of the metal substrate member; and (b) the metal substrate member. IC chip mounting process for mounting IC chip on die pad of each unit metal substrate (C) a wire bonding step in which a predetermined internal terminal of the metal substrate of each unit of the metal substrate member and an IC chip are connected by wire bonding; and (d) an IC chip and a bonding wire are transferred by a transfer method. A resin sealing step for resin-sealing a predetermined region including the resin, and (e) a singulation step for dividing into pieces by a predetermined cutter.
In the IC card module manufacturing method described above, the processing material is made of a Cu material or a 42 alloy (42% Ni—Fe alloy).
[0008]
[Action]
The metal substrate member for an IC card module according to the present invention provides a metal substrate member that can manufacture an IC module for a non-contact type IC card with high productivity by using such a configuration. It is possible.
Specifically, the metal substrate of the unit has a die pad for mounting an IC chip with the terminal surface facing upward, and the antenna terminal for connecting to the antenna coil is located more than the die pad and the resin sealing region. On the outside, two antenna coils for one loop or four antenna coil for two loops are arranged across the die pad in the longitudinal direction of the strip-shaped processing material, and are arranged in the longitudinal direction of the strip-shaped processing material. The antenna terminal area between the metal substrates adjacent to each other in the direction is overlapped as a common area, and the unit metal substrate is faced in the longitudinal direction of the processing material. Metal substrates can be encapsulated with resin just by making a predetermined width cut in the longitudinal direction of the processing material on the outside (2 locations). As desired configuration can be separated after, by being trimmed, we have achieved this.
Specifically, the metal substrate member for the IC card module of the present invention can be manufactured by making a plate making process and an etching process with a reel-to-reel, and further, the metal substrate member for the IC card module of the present invention. Using straight members, the IC card module can be processed with reel, toe, and reel with high mass productivity.
[0009]
Moreover, it has a die pad larger in size than the IC chip for mounting the IC chip with the terminal surface facing upward, and the IC chip mounting area of the die pad is thinner than the base thickness of the metal substrate by half etching. In particular, the IC module can meet the demand for thinning the IC module.
Further, as a thin strip-shaped processing material made of metal, Cu material or 42 alloy (42% Ni-Fe alloy) is usually used from the viewpoint of conductivity, processability, versatility, etc. Not.
As described above, the thickness of the thin strip-shaped processing material made of metal may be any thickness as long as it can meet the demand for thinning the IC module. A thin one having a thickness of about 1 mm is particularly preferable from the viewpoint of thinning.
In addition, by providing a recess for improving the adhesion of the sealing resin on the outside of the die pad region and providing a sealing resin support portion integrally connected to the antenna terminal, the resin sealing can be performed. It is considered reliable.
[0010]
The IC card module manufacturing method of the present invention can manufacture an IC module for a non-contact type IC card with high productivity by adopting such a configuration.
That is, this is achieved by performing each process by reel-to-reel.
As described above, as a thin strip-shaped processing material made of metal, a Cu material or a 42 alloy (42% Ni-Fe alloy) is usually used from the viewpoint of conductivity, processability, versatility, and the like. However, it is not limited to these.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of a metal substrate member for an IC card module of the present invention will be described with reference to the drawings.
FIG. 1A is a schematic configuration diagram showing a part of a first example of an embodiment of a metal substrate member for an IC card module of the present invention, and FIG. 1B is a diagram in FIG. FIG. 2A is a diagram showing a unit metal substrate, and FIG. 2A shows an IC chip mounted on a die pad of each unit metal substrate of the IC card module shown in FIG. 1A. FIG. 2 (b) is a diagram showing a metal substrate portion of a unit in FIG. 2 (a), and FIG. 3 is a transfer molding process performed on the member shown in FIG. 2 (a). 4 is a schematic configuration diagram showing a part of a second example of the embodiment of the metal substrate member for an IC card module of the present invention, and FIG. 5 is a diagram for the IC card module shown in FIG. Metal Subs The IC chip is mounted on a die pad of the metal substrate of each unit of the rate members, in view obtained by wire bonding connection, FIG. 6 is a diagram which has been subjected to transfer molding process member shown in FIG.
1 to 6, 111 is a processing material, 120 is a unit metal substrate, 121 is a die pad, 121H is a half-etched portion, 122A and 122B are terminals (connected to an antenna), 123A and 123B are internal terminals, 124 is a through hole, 125 is a through hole portion, 126 is a splice portion, 128 is a sprocket, 130 is an IC chip, 131 is a terminal, 135 is a bonding wire, 140 is a sealing resin, 221 is a die pad, and 221H is a half-etched portion , 222A, 222B, 222C and 222D are terminals (connected to the antenna), 223A, 223B, 223C and 223D are internal terminals, 225 is a through hole portion, 226 is a connecting portion, 228 is a sprocket, 230 is an IC chip, 231 is Terminals, 235 are bonding wires, 240 is a sealing resin .
[0012]
The 1st example of embodiment of the metal substrate member for IC card modules of this invention is demonstrated based on FIG.
The metal substrate member for the IC card module of the first example is an IC card module for a transfer mold type non-contact type IC card, which is a unit metal substrate 120 used in an IC module in which an antenna is arranged in one loop. (See FIG. 1 (b)) with a plurality of metal substrate members arranged in a state where each portion of the unit metal substrate 120 is held by the connecting portion 126 on a thin strip-shaped processing material made of conductive metal. It is formed by etching.
As shown in FIG. 1B, the unit metal substrate 120 has a die pad 121 for mounting an IC chip with the terminal surface facing upward, and is used for connection to an antenna coil (not shown). The antenna terminals 122A and 122B are disposed outside the die pad 121 and the resin sealing region, and two antenna coils are used for one loop, straddling the die pad 121 in the longitudinal direction of the strip-shaped processing material 111, respectively. The antenna substrate portion regions 122A and 122b of the unit substrates adjacent to each other in the longitudinal direction of the strip-shaped processing material 111 are overlapped as a common region, and the unit substrate 120 is disposed in the longitudinal direction of the processing material 111. Is imposing.
And the metal substrate 120 of each unit is resin-sealed only by making a cut of a predetermined width in the longitudinal direction of the processing material 111 on the outside (two places) shown by L1 and L2 in FIG. After that, the outer shape is processed so that the desired outer shape can be separated.
In this example, a through-hole 124 for improving the adhesion of the sealing resin is arranged outside the die pad region, and the antenna terminals 122A and 122B and the internal terminals 123A and 123B that are integrally connected are provided. Yes.
[0013]
As a processing material, a Cu material or a 42 alloy (42% Ni—Fe alloy) is usually used for conductivity, processability, processability, and versatility, but is not limited thereto.
The thickness of the thin strip-shaped processing material made of metal may be any thickness that can meet the demand for thinning the IC module.
[0014]
As a modification of the first example, there is a die pad larger in size than the IC chip for mounting the IC chip with the terminal surface facing upward, and the IC chip mounting area of the die pad is half-etched by metal sub The thing formed thinner than the straight base-material thickness is mentioned.
In the case of this modification, the thickness can be further reduced than in the first example.
[0015]
A second example of the embodiment of the metal substrate member for the IC card module of the present invention will be briefly described with reference to FIG.
The second example is an IC card module for a transfer mold type non-contact type IC card, which is a metal substrate member in which a plurality of unit metal substrates used in an IC module in which antenna coils are arranged in two loops are arranged. In this state, etching is performed in a state where each part of the unit metal substrate is held by a connecting part on a thin strip-shaped processing material made of conductive metal.
In the second example, a die pad larger in size than the IC chip for mounting the IC chip with the terminal surface facing upward is provided, and the IC chip mounting area of the die pad is half-etched to form the base of the metal substrate. It is formed thinner than the material thickness.
Also in the case of the second example, the thickness can be further reduced as compared with the first example.
FIG. 4 is an enlarged view showing the state of two metal substrates adjacent to each other in the longitudinal direction of the processing material.
In FIG. 4, the unit metal substrate includes a die pad 221, antenna terminals 222A, 222B, 222C and 222D, internal terminals 223A, 223B, 223C, and 223D, and a connecting portion 226 for connecting them to a processing material. The antenna terminal area of the unit substrates adjacent to each other in the longitudinal direction of the processing material is overlapped as a common area, and the substrate serving as the unit is faced in the longitudinal direction of the processing material. .
The second example is for two loops of antenna coil, in which four antenna terminals are straddled across the die pad 221 in the longitudinal direction, and two antenna terminals are arranged.
[0016]
In the second example, a through hole (corresponding to 124 in FIG. 1) is not provided in the internal terminal as in the first example, but may be provided as appropriate.
[0017]
Next, an example of a method for producing an IC card module of the present invention will be briefly described with reference to FIGS.
The IC card module manufacturing method of this example is manufactured using the metal substrate member of the first example shown in FIG.
This example is a method for producing a transfer mold type IC card module used for a non-contact type IC card. A thin processing material made of metal is subjected to a plate making process and an etching process with a reel toe reel. A metal substrate member of the first example shown in FIG. 1 is formed. (Figure 1)
As a processing material, a thickness of 0. Using a strip-shaped Cu material of about 1 mm or a 42 alloy (42% Ni-Fe alloy) material, an etching-resistant resist pattern is formed on both sides by a plate making process, and then sprayed from both sides using a predetermined etching solution. Etching is performed to form a metal substrate member by etching.
In order to perform half-etching with higher accuracy, the etching is divided into two stages, the first etching is performed on the half-etching surface side, and then a predetermined filler is embedded in the hole formed by etching. Alternatively, a method of performing the second etching from the opposite side may be employed.
Next, a predetermined area of each unit metal substrate of the etched metal substrate member (FIG. 1A) is subjected to silver plating with a reel-to-reel, and each unit of the metal substrate member is subjected to silver plating. An IC chip is mounted on a metal substrate die pad. Instead of silver plating on a predetermined region of the metal substrate, palladium plating may be applied to the entire surface of the metal substrate.
Thereafter, a terminal (not shown) of the IC chip and an internal terminal (corresponding to 123A and 123B in FIG. 1) are connected by wire bonding. (Fig. 2 (a))
Next, a predetermined region including an IC chip and a bonding wire is resin-sealed by a transfer method. (Figure 3)
Thereafter, with a predetermined cutter, the connecting portion 126 is cut along the lines L1 and L2 in FIG. 1B, and separated into individual pieces to obtain IC modules.
[0018]
In the above method, when the metal substrate member of the second example shown in FIG. 4 is used as the metal substrate member, similarly, the metal substrate member formed by etching with a reel-to-reel (FIG. 4) Silver plating is applied to a predetermined region of each unit metal substrate, and an IC chip is mounted on the die pad of each unit metal substrate of the metal substrate member, and then wire bonding connection is performed (FIG. 5). ), A predetermined region including an IC chip and a bonding wire is resin-sealed by a transfer method. (Fig. 6)
Then, the connecting portion 226 is cut along a predetermined cutter along L3 and L4 in FIG. 4 and separated into individual pieces to obtain IC modules.
[0019]
【The invention's effect】
As described above, the present invention makes it possible to provide a metal substrate member that can manufacture an IC module for a non-contact type IC card with high mass productivity.
At the same time, it was possible to provide a method for manufacturing an IC module using such a metal substrate member.
[Brief description of the drawings]
FIG. 1A is a schematic configuration diagram showing a part of a first example of an embodiment of a metal substrate member for an IC card module according to the present invention, and FIG. It is the figure which showed the metal substrate of the unit in (a).
FIG. 2A is a diagram in which an IC chip is mounted on a die pad of a metal substrate of each unit of a metal substrate member for an IC card module shown in FIG. FIG. 2B is a diagram showing a metal substrate portion of a unit in FIG.
FIG. 3 is a view of the member shown in FIG.
FIG. 4 is a schematic configuration diagram showing a part of a second example of the embodiment of the metal substrate member for the IC card module of the present invention.
5 is a diagram in which an IC chip is mounted on a die pad of a metal substrate of each unit of the metal substrate member for the IC card module shown in FIG. 4 and wire bonding is performed.
6 is a view of the member shown in FIG. 5 subjected to a transfer molding process. FIG.
FIG. 7 is a diagram for explaining a conventional method for producing a metal substrate and an IC module.
FIG. 8 is a diagram for explaining an IC module and its circuit configuration in a non-contact type IC card.
FIG. 9 is a diagram for explaining the relationship between a metal substrate processing method and resin leakage.
[Explanation of symbols]
111 Processing Material 120 Unit Metal Substrate 121 Die Pad 121H Half Etched Portions 122A, 122B (Connecting to Antenna) Terminals 123A, 123B Internal Terminal 124 Through Hole 125 Through Hole Port 126 Connecting Portion 128 Sprocket 130 IC Chip 131 Terminal 135 Bonding Wire 140 Sealing resin 221 Die pad 221H Half-etched portion 222A, 222B, 222C, 222D (connect to antenna) Terminals 223A, 223B, 223C, 223D Internal terminal 225 Through-hole portion 226 Connecting portion 228 Sprocket 230 IC chip 231 Terminal 235 Bonding wire 240 Resin for sealing

Claims (6)

トランスファモールドタイプの非接触型ＩＣカード用のＩＣカードモジュールに用いられる単位のメタルサブストレートを、多数配列したメタルサブストレート部材であって、金属からなる帯状の薄い加工用素材に単位のメタルサブストレートの各部を繋ぎ部で保持した状態で、エッチング形成されたものであり、単位のメタルサブストレートは、端子面を上側にしてＩＣチップを搭載するためのダイパッドを有し、アンテナコイルと接続するためのアンテナ端子を、ダイパッドおよび樹脂封止領域よりも外側に、アンテナコイル１ループ用として２個あるいはアンテナコイル２ループ用として４個を、前記帯状の加工用素材の長手方向でダイパッドを跨ぎ、それぞれ配するもので、前記帯状の加工用素材の長手方向に隣接する単位のメタルサブストレート同志のアンテナ端子部領域を、共通領域としてオーバラップして、単位のメタルサブストレートを、加工用素材の長手方向に面付けしており、且つ、各単位のメタルサブストレートは、その外側（２箇所）において加工用素材の長手方向に所定幅のカットを入れるだけで、樹脂封止した後に所望の外形が分離できるように、外形加工されていることを特徴とするＩＣカードモジュール用のメタルサブストレート部材。A metal substrate member in which a large number of unit metal substrates used in an IC card module for a transfer mold type non-contact type IC card are arranged, and a unit metal substrate in a thin strip-shaped material made of metal. The metal substrate of the unit has a die pad for mounting the IC chip with the terminal surface facing upward, and is connected to the antenna coil. The antenna terminals are placed outside the die pad and the resin sealing region, two for the antenna coil 1 loop or four for the antenna coil 2 loop, straddling the die pad in the longitudinal direction of the strip-shaped processing material, The metal of the unit adjacent to the longitudinal direction of the strip-shaped processing material The antenna terminal areas of the busts are overlapped as a common area, the unit metal substrate is faced in the longitudinal direction of the processing material, and the metal substrate of each unit is outside For an IC card module, the outer shape is processed so that a desired outer shape can be separated after sealing with a resin simply by making a cut of a predetermined width in the longitudinal direction of the processing material at (two locations). Metal substrate member. 請求項１に記載のメタルサブストレート部材であって、端子面を上側にしてＩＣチップを搭載するための、ＩＣチップより大サイズのダイパッドを有し、該ダイパッドのＩＣチップ搭載領域はハーフエッチングにて、メタルサブストレートの基材厚よりも薄く形成されていることを特徴とするＩＣカードモジュール用のメタルサブストレート部材。The metal substrate member according to claim 1, further comprising a die pad larger in size than the IC chip for mounting the IC chip with the terminal surface facing upward, and the IC chip mounting region of the die pad is half-etched. A metal substrate member for an IC card module, wherein the metal substrate member is formed to be thinner than the substrate thickness of the metal substrate. 請求項１ないし２のいずれか１項に記載のメタルサブストレート部材であって、ダイパッド領域の外側に、封止樹脂の密着性を向上させるための凹部を配し、前記アンテナ端子と一体的に接続する内部端子を設けていることを特徴とするＩＣカードモジュール用のメタルサブストレート部材。3. The metal substrate member according to claim 1, wherein a recess for improving the adhesion of the sealing resin is disposed outside the die pad region, and integrally with the antenna terminal. A metal substrate member for an IC card module, characterized in that an internal terminal for connection is provided. 請求項１ないし３のいずれか１項に記載のメタルサブストレート部材であって、加工用素材はＣｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）からなることを特徴とするＩＣカードモジュール用のメタルサブストレート部材。The metal substrate member according to any one of claims 1 to 3, wherein the processing material is made of a Cu material or a 42 alloy (42% Ni-Fe alloy). Metal substrate member. 非接触型のＩＣカードに用いられるトランスファモールドタイプのＩＣカードモジュールの作製方法であって、金属からなる薄い加工用素材に対し、リール・トウー・リールで、製版処理、エッチング処理を行い、請求項１ないし３のいずれか１項に記載のメタルサブストレート部材を、形成するエッチング加工工程を行った後、以下、リール・トウー・リールで、順に、（ａ）前記メタルサブストレート部材の各単位のメタルサブストレートに対し、その所定の領域に銀メッキ処理またはその全面にパラジュームめっき処理を施す、めっき処理工程と、（ｂ）前記メタルサブストレート部材の各単位のメタルサブストレートのダイパッド上に、ＩＣチップを搭載するＩＣチップマウント工程と、（ｃ）前記メタルサブストレート部材の各単位のメタルサブストレートの所定内部端子とＩＣチップとをワイヤボンディング接続するワイヤボンディング工程と、
（ｄ）トランスファ方式により、ＩＣチップ、ボンデインングワイヤを含み所定領域を樹脂封止する樹脂封止工程と、（ｅ）所定のカッターにて個片化する個片化工程とを、行うことを特徴とするＩＣカードモジュールの作製方法。A method for producing a transfer mold type IC card module used for a non-contact type IC card, wherein a plate-making process and an etching process are performed on a thin processing material made of metal with a reel-to-reel. After performing the etching process which forms the metal substrate member of any one of 1 thru | or 3, after that, in order of a reel toe reel, in order, (a) Each unit of the said metal substrate member A plating process for applying a silver plating process to a predetermined area of the metal substrate or a palladium plating process on the entire surface thereof; and (b) an IC on a die pad of each unit of the metal substrate member. An IC chip mounting step for mounting the chip, and (c) each of the metal substrate members. A wire bonding step of wire bonding with a predetermined internal terminal and the IC chip of the metal substrate of,
(D) Performing a resin sealing step of resin-sealing a predetermined region including an IC chip and a bonding wire by a transfer method, and (e) a singulation step of separating into pieces with a predetermined cutter. A method for producing an IC card module characterized by 請求項５に記載のＩＣカードモジュールの作製方法であって、加工用素材はＣｕ材あるいは４２合金（４２％Ｎｉ−Ｆｅ合金）からなることを特徴とするＩＣカードモジュールの作製方法。6. The method of manufacturing an IC card module according to claim 5, wherein the processing material is made of a Cu material or a 42 alloy (42% Ni—Fe alloy).
JP2003172221A 2003-06-17 2003-06-17 Metal substrate member for IC card module and manufacturing method of IC card module Expired - Fee Related JP4357885B2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2003172221A JP4357885B2 (en) 2003-06-17 2003-06-17 Metal substrate member for IC card module and manufacturing method of IC card module
KR1020057001936A KR101030899B1 (en) 2003-06-17 2004-06-17 Metal base device and ic card module manufacturing method
PCT/JP2004/008534 WO2004112133A1 (en) 2003-06-17 2004-06-17 Metal base device and ic card module manufacturing method
US11/086,238 US7271471B2 (en) 2003-06-17 2005-03-23 Metal substrate apparatus, method of manufacturing an IC card module apparatus, and an IC card module apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003172221A JP4357885B2 (en) 2003-06-17 2003-06-17 Metal substrate member for IC card module and manufacturing method of IC card module

Publications (2)

Publication Number Publication Date
JP2005011890A true JP2005011890A (en) 2005-01-13
JP4357885B2 JP4357885B2 (en) 2009-11-04

Family

ID=33549467

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003172221A Expired - Fee Related JP4357885B2 (en) 2003-06-17 2003-06-17 Metal substrate member for IC card module and manufacturing method of IC card module

Country Status (3)

Country Link
JP (1) JP4357885B2 (en)
KR (1) KR101030899B1 (en)
WO (1) WO2004112133A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179512A (en) * 2004-12-20 2006-07-06 Dainippon Printing Co Ltd Metal substrate apparatus, ic card module apparatus and method of manufacturing the same
JP2018512501A (en) * 2015-02-20 2018-05-17 ヘラエウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディトゲゼルシャフト Band-shaped substrate for manufacturing chip card modules

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302757A (en) * 1988-05-30 1989-12-06 Ibiden Co Ltd Substrate assembly sheet
JPH0758273A (en) * 1993-08-16 1995-03-03 Sony Corp Lead frame and semiconductor device using same
JP2000174176A (en) * 1998-12-01 2000-06-23 Tokin Corp Lead frame for ic module, ic module using the same, and ic card
JP3895570B2 (en) * 2000-12-28 2007-03-22 株式会社ルネサステクノロジ Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006179512A (en) * 2004-12-20 2006-07-06 Dainippon Printing Co Ltd Metal substrate apparatus, ic card module apparatus and method of manufacturing the same
JP2018512501A (en) * 2015-02-20 2018-05-17 ヘラエウス ドイチュラント ゲゼルシャフト ミット ベシュレンクテル ハフツング ウント コンパニー コマンディトゲゼルシャフト Band-shaped substrate for manufacturing chip card modules

Also Published As

Publication number Publication date
JP4357885B2 (en) 2009-11-04
KR101030899B1 (en) 2011-04-22
KR20060025118A (en) 2006-03-20
WO2004112133A1 (en) 2004-12-23

Similar Documents

Publication Publication Date Title
CN103035606B (en) Based on the flash memory cards of lead frame
KR20040030283A (en) Lead frame and method of manufacturing the same
US8552542B2 (en) Lead frame, semiconductor device, method of manufacturing lead frame, and method of manufacturing semiconductor device
KR100568225B1 (en) Lead Frame and method for fabricating semiconductor package using the same
JP4522049B2 (en) Semiconductor device
JP2005085089A (en) Ic card and manufacturing method thereof
JP4373122B2 (en) Resin-sealed semiconductor device and manufacturing method thereof
KR101110968B1 (en) Metal substrate device, ic card module manufacturing method and ic card module body
US7271471B2 (en) Metal substrate apparatus, method of manufacturing an IC card module apparatus, and an IC card module apparatus
JP4357885B2 (en) Metal substrate member for IC card module and manufacturing method of IC card module
JP2004207276A (en) Circuit device and its manufacturing method
JP4467903B2 (en) Resin-sealed semiconductor device
JP2524645B2 (en) Lead frame and manufacturing method thereof
JP4522802B2 (en) IC module
JP4115560B2 (en) Manufacturing method of semiconductor package
JPH11177001A (en) Printed-circuit board strip for manufacturing card type semiconductor package and manufacture thereof
JP2816757B2 (en) Method for manufacturing semiconductor device
KR100575859B1 (en) ball grid array package
JP5574297B2 (en) Lead frame manufacturing method
JPH06283660A (en) Resin frame for semiconductor device and manufacture of semiconductor device using same
JP2004273807A (en) Semiconductor device and its manufacturing method
JPH0758262A (en) Lead frame
JPH08264702A (en) Lead frame of semiconductor device and semiconductor device using the same
JPH03283643A (en) Manufacture of lead frame
JPH05235248A (en) Lead frame

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20060519

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090422

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090619

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20090714

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20090805

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120814

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20120814

Year of fee payment: 3

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20130814

Year of fee payment: 4

LAPS Cancellation because of no payment of annual fees