JP2005006013A - Photolithographic method, method of manufacturing piezoelectric oscillating piece, method of manufacturing piezoelectric device, piezoelectric oscillating piece, semiconductor device, electronic part, piezoelectric device, electronic apparatus and portable telephone - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a photolithographic method, etc. for forming a uniform and thin resist coat formed on an electrode film of a substrate. <P>SOLUTION: The method comprises a step of coating resist grains 132b on a substrate 71 covered with an electrode film 22, a step of gasifying a solvent 146 for solving the resist grains 132b to produce an evaporation gas G of the solvent, a step of solving the resist grains 132b by the gas G of the solvent to form an electrode resist 137 on the electrode film 22 after placing the substrate 71 in the atmosphere of the solvent evaporation gas G, and a step of forming a resist pattern corresponding to an electrode pattern on the substrate 71 by exposing the electrode resist 137 formed on the electrode film 22 of the substrate 71 with a corresponding mask set on the substrate 71 to the electrode pattern. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a photolithography method, a method for manufacturing a piezoelectric vibrating piece, a method for manufacturing a piezoelectric vibrating piece, a method for manufacturing a piezoelectric device, and a piezoelectric vibrating piece, in which resist particles are applied to a substrate coated with an electrode film, and the resist is formed on the electrode film on the substrate. The present invention relates to a semiconductor element, an electronic component, a piezoelectric device, an electronic apparatus, and a mobile phone device.
[0002]
[Prior art]
Conventionally, for example, a method called a spin coating method is often used as a method for forming a thin and uniform film on an object. This spin coating method has a feature that a coated material can be applied in the vicinity of the center of the rotated coated material, and the coated material can be coated on the surface of the coated material by centrifugal force. This spin coating method can be applied as long as the surface of the object to be coated is flat, and the coating thickness of the object to be coated can be formed thinly and uniformly. For this reason, at first glance, this spin coating method may be considered to be applied to the application of a resist when an electrode is formed on a piezoelectric vibrating piece, for example.
[0003]
However, such a method of forming a resist by the spin coating method cannot be applied to formation of an electrode resist when forming an electrode to be formed corresponding to the electrode pattern of the piezoelectric vibrating piece. This is because the spin coating method is difficult to apply thinly and uniformly on an object having irregularities or through holes on the surface. In other words, the crystal wafer, which is the base material of the piezoelectric vibrating piece, has completed the outer shape etching of the piezoelectric vibrating piece before the electrode resist is formed, and unevenness or through holes are already formed on the crystal wafer. Because.
[0004]
Also, at first glance, it may be possible to realize the formation of a resist using, for example, spray coating or electrostatic coating. These spray coating and electrostatic coating are methods in which resist particles are applied to a piezoelectric vibrating piece, and a resist made of resist particles is formed on the piezoelectric vibrating piece. These spray coating and electrostatic coating are characterized in that, for example, a crystal wafer can be used to form a resist after external etching of the piezoelectric vibrating piece (see, for example, Patent Document 1).
[0005]
[Patent Document 1]
JP 2002-290181 A
[0006]
[Problems to be solved by the invention]
However, when a resist is formed by spray coating, electrostatic coating, or the like, the resist particles are granular, so that the coating thickness partially changes due to the overlapping of the resist particles, and it is difficult to make the resist uniformly thin. Specifically, it is as follows.
[0007]
14A to 14D are cross-sectional views illustrating an example of a procedure for forming the electrode 122a using the resist 1137 by a conventional photolithography method.
As shown in FIG. 14A, resist fine particles 1132b are applied to the vibrating arm 1134 of the piezoelectric vibrating piece on which the electrode film 122 is formed by spray coating or electrostatic coating. Here, since the resist fine particles 1132b are in the form of particles, the coating thickness d of the resist 1137 made of the resist fine particles 1132b is difficult to be uniform as shown in FIG.
[0008]
For this reason, when the resist 1137 is exposed using a mask, an unnecessary resist 1137b remains in a portion that should not remain as shown in FIG. When the electrode film 122 is etched with the resist 1137b remaining in this manner, a part of the electrode film 122 remains as an unnecessary electrode 122b as shown in FIG. 14D, and the electrode 122a corresponding to a fine electrode pattern is formed. It was difficult to form the film with high accuracy.
[0009]
SUMMARY OF THE INVENTION An object of the present invention is to solve the above-described problems and to form a photolithographic method, a piezoelectric vibrating piece manufacturing method, and a piezoelectric device that can uniformly form a thin resist coating formed on an electrode film on a substrate. Manufacturing method, piezoelectric vibrating piece, semiconductor element, electronic component, piezoelectric device, electronic apparatus, and mobile phone device.
[0010]
[Means for Solving the Problems]
According to the first aspect of the present invention, the resist particle application step of applying resist particles to the substrate coated with the electrode film, and vaporizing the solvent capable of dissolving the resist particles to vaporize the solvent A gas phase forming step for forming a gas; and a resist particle dissolving step for disposing the substrate in an atmosphere of the solvent evaporating gas and dissolving the resist particles with the solvent evaporating gas to form a resist on the electrode film. A mask corresponding to the electrode pattern to be formed is disposed on the substrate, the resist formed on the electrode film of the substrate is exposed, and a resist pattern corresponding to the electrode pattern is formed on the substrate It is achieved by a photolithography method characterized in that it comprises a patterning step.
According to the above configuration, the resist particle as it is applied on the substrate coated with the electrode film does not have a uniform coating thickness, but the resist particle is dissolved on the substrate by the evaporation gas of the solvent, thereby causing unevenness of the resist particle. As a result of the surface tension, the coating thickness becomes uniform as a whole, and a thin resist is formed on the electrode film of the substrate. Therefore, it is possible to form a fine pattern electrode on the substrate using a photolithography method that has been impossible in the past. Further, the surface of the formed resist is smoothed by the surface tension generated by re-dissolution of the resist particles.
[0011]
According to a second invention, in the configuration of the first invention, in the resist particle application step, a liquid resist solvent is used as the mist-like resist particles, and the resist particles are applied to the electrode film on the substrate. It is characterized by.
According to the above configuration, even if the resist particles applied to the electrode film are somewhat uneven, a resist having a uniform application thickness is formed on the electrode film by dissolution of the resist particles. Therefore, it is possible to form a fine pattern electrode on the substrate using a photolithography method that has been impossible in the past.
[0012]
According to a third invention, in the configuration of the first invention, in the resist particle coating step, the electrode film coated on the substrate is charged, and the electrode film is charged to a polarity different from the electrode film. The resist particles are electrostatically applied.
According to the above configuration, even if the resist particles applied to the electrode film are somewhat uneven, a resist having a uniform application thickness is formed on the electrode film by dissolution of the resist particles. Therefore, it is possible to form a fine pattern electrode on the substrate using a photolithography method that has been impossible in the past.
[0013]
According to a fourth invention, in any one of the first to third inventions, the substrate has a concavo-convex shape or a through hole.
According to the above configuration, even in a substrate having a concavo-convex shape or a through-hole, an electrode with a fine pattern can be formed on the substrate using a resist having a thin and uniform coating thickness.
[0014]
According to a fifth invention, in any one of the first to fourth inventions, the solvent contains propylene glycol monomethyl ether acetate.
According to the above configuration, since the solvent containing propylene glycol monomethyl ether acetate is vaporized at room temperature, no heating means is required and the resist particles can be dissolved at room temperature.
[0015]
According to the sixth aspect of the present invention, the outer shape forming step for etching the substrate to form the outer shape of the piezoelectric vibrating piece, and the resist particles for applying the resist particles to the piezoelectric vibrating piece coated with the electrode film are provided. An application step, a vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporating gas of the solvent, disposing the piezoelectric vibrating piece in an atmosphere of the evaporating gas of the solvent, Dissolving the resist particles by evaporating gas to form a resist particle on the electrode film, and disposing a mask corresponding to the electrode pattern to be formed on the piezoelectric vibrating piece, and the electrode film of the piezoelectric vibrating piece A resist pattern forming step of exposing the resist formed thereon and forming a resist pattern corresponding to the electrode pattern on the piezoelectric vibrating piece; The method of manufacturing a piezoelectric vibrating piece and having an electrode corresponding to the electrode pattern using a serial resist pattern and forming electrodes forming step on a piece of the piezoelectric vibrating, is achieved.
According to the above configuration, the resist particles as applied on the piezoelectric vibrating piece coated with the electrode film do not have a uniform coating thickness, but the resist particles are dissolved on the piezoelectric vibrating piece by the evaporation gas of the solvent, whereby the resist particles As a result, the coating thickness becomes uniform as a whole by the surface tension, and a thin resist is formed on the electrode film of the substrate. Therefore, it is possible to form a fine pattern electrode on the piezoelectric vibrating piece using photolithography, which has been impossible in the past. Further, the surface of the formed resist is smoothed by the surface tension generated by re-dissolution of the resist particles.
[0016]
According to the seventh aspect of the present invention, there is provided a resist particle coating step in which resist particles are coated on a substrate coated with an electrode film, and a solvent capable of dissolving the resist particles is vaporized to evaporate the solvent. A vapor phase step, a resist particle dissolution step of disposing the substrate in an atmosphere of an evaporation gas of the solvent, and dissolving the resist particles by the evaporation gas of the solvent to form a resist on the electrode film; Resist pattern formation in which a mask corresponding to the electrode pattern to be formed is disposed on the substrate, the resist formed on the electrode film of the substrate is exposed, and a resist pattern corresponding to the electrode pattern is formed on the substrate And an electrode forming step of forming an electrode corresponding to the electrode pattern on the substrate using the resist pattern. The semiconductor element manufactured by the manufacturing method of a semiconductor device characterized bets is achieved.
According to the above configuration, the resist particle as it is applied on the substrate coated with the electrode film does not have a uniform coating thickness, but the resist particle is dissolved on the substrate by the evaporation gas of the solvent, thereby causing unevenness of the resist particle. As a result of the surface tension, the coating thickness becomes uniform as a whole, and a thin resist is formed on the electrode film of the substrate. Therefore, it is possible to form a fine pattern electrode on a substrate of a semiconductor element using a photolithography method. Further, the surface of the formed resist is smoothed by the surface tension generated by re-dissolution of the resist particles.
[0017]
The above-mentioned object is that the eighth invention is a resist particle coating step in which resist particles are applied to a substrate coated with an electrode film, and a solvent capable of dissolving the resist particles is vaporized to evaporate the solvent. A vapor phase step, a resist particle dissolution step of disposing the substrate in an atmosphere of an evaporation gas of the solvent, and dissolving the resist particles by the evaporation gas of the solvent to form a resist on the electrode film; Resist pattern formation in which a mask corresponding to the electrode pattern to be formed is disposed on the substrate, the resist formed on the electrode film of the substrate is exposed, and a resist pattern corresponding to the electrode pattern is formed on the substrate Forming an electrode corresponding to the electrode pattern on the substrate using the step and the resist pattern; and the electrode An electronic device manufactured by a method for manufacturing an electronic component, comprising: a step of fixing the formed substrate to a package while maintaining electrical continuity, and sealing the package containing the substrate. Achieved by parts.
According to the above configuration, the resist particle as it is applied on the substrate coated with the electrode film does not have a uniform coating thickness, but the resist particle is dissolved on the substrate by the evaporation gas of the solvent, thereby causing unevenness of the resist particle. As a result of the surface tension, the coating thickness becomes uniform as a whole, and a thin resist is formed on the electrode film of the substrate. Accordingly, it is possible to form an electrode with a fine pattern on a substrate of an electronic device using a photolithography method. Further, the surface of the formed resist is smoothed by the surface tension generated by re-dissolution of the resist particles.
[0018]
According to the ninth aspect of the present invention, there is provided a profile forming step of etching the substrate to form an outer shape of the piezoelectric vibrating piece, and a resist particle applying step of applying resist particles to the piezoelectric vibrating piece coated with the electrode film. Vaporizing a solvent capable of dissolving the resist particles into a vapor phase to produce the solvent evaporating gas; and disposing the piezoelectric vibrating reed in an atmosphere of the solvent evaporating gas, and evaporating the solvent A resist particle dissolving step of dissolving the resist particles to form a resist on the electrode film, and a mask corresponding to the electrode pattern to be formed is disposed on the piezoelectric vibrating piece, and on the electrode film of the piezoelectric vibrating piece A resist pattern forming step of exposing the formed resist and forming a resist pattern corresponding to the electrode pattern on the piezoelectric vibrating piece; Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece by using a strike pattern; and fixing the piezoelectric vibrating piece on which the electrode is formed to a package while maintaining electrical continuity; And a sealing step for sealing the package containing the resonator element. This is achieved by a method for manufacturing a piezoelectric device.
According to the above configuration, the resist particles as applied on the piezoelectric vibrating piece coated with the electrode film do not have a uniform coating thickness, but the resist particles are dissolved on the piezoelectric vibrating piece by the evaporation gas of the solvent, whereby the resist particles As a result, the coating thickness becomes uniform as a whole by the surface tension, and a thin resist is formed on the electrode film of the substrate. Therefore, it is possible to form a fine pattern electrode on the piezoelectric vibrating piece using photolithography, which has been impossible in the past. Further, the surface of the formed resist is smoothed by the surface tension generated by re-dissolution of the resist particles.
[0019]
According to the tenth aspect of the present invention, the outer shape forming step for etching the substrate to form the outer shape of the piezoelectric vibrating piece, and the resist particles for applying the resist particles to the piezoelectric vibrating piece coated with the electrode film are provided. An application step, a vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporating gas of the solvent, disposing the piezoelectric vibrating piece in an atmosphere of the evaporating gas of the solvent, Dissolving the resist particles by evaporating gas to form a resist particle on the electrode film, and disposing a mask corresponding to the electrode pattern to be formed on the piezoelectric vibrating piece, and the electrode film of the piezoelectric vibrating piece A resist pattern forming step of exposing the resist formed thereon and forming a resist pattern corresponding to the electrode pattern on the piezoelectric vibrating piece; This is achieved by a piezoelectric vibrating piece manufactured by a method of manufacturing a piezoelectric vibrating piece having an electrode forming step of forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern. .
According to the above configuration, the piezoelectric vibrating reed can be miniaturized because an electrode with a fine pattern can be formed on the piezoelectric vibrating reed using a resist having a thin and uniform coating thickness.
[0020]
According to the eleventh aspect of the present invention, the outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating reed, and the resist particles for applying the resist particles to the piezoelectric vibrating reed covering the electrode film An application step, a vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporating gas of the solvent, disposing the piezoelectric vibrating piece in an atmosphere of the evaporating gas of the solvent, Dissolving the resist particles by evaporating gas to form a resist particle on the electrode film, and disposing a mask corresponding to the electrode pattern to be formed on the piezoelectric vibrating piece, and the electrode film of the piezoelectric vibrating piece A resist pattern forming step of exposing the resist formed thereon and forming a resist pattern corresponding to the electrode pattern on the piezoelectric vibrating piece; Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern; and fixing the piezoelectric vibrating piece on which the electrode is formed to a package while taking electrical conduction; This is achieved by a piezoelectric device manufactured by a method for manufacturing a piezoelectric device having a sealing step for sealing the package containing a piezoelectric vibrating piece.
According to the above configuration, since the electrode having a fine pattern can be formed on the piezoelectric vibrating piece using the resist having a thin and uniform coating thickness, the piezoelectric device including the piezoelectric vibrating piece can be downsized.
[0021]
According to the twelfth aspect of the invention, the outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating piece, and the resist particles that apply the resist particles to the piezoelectric vibrating piece coated with the electrode film An application step, a vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporating gas of the solvent, disposing the piezoelectric vibrating piece in an atmosphere of the evaporating gas of the solvent, Dissolving the resist particles by evaporating gas to form a resist particle on the electrode film, and disposing a mask corresponding to the electrode pattern to be formed on the piezoelectric vibrating piece, and the electrode film of the piezoelectric vibrating piece A resist pattern forming step of exposing the resist formed thereon and forming a resist pattern corresponding to the electrode pattern on the piezoelectric vibrating piece; Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern; and fixing the piezoelectric vibrating piece on which the electrode is formed to a package while taking electrical conduction; This is achieved by an electronic apparatus comprising a piezoelectric device manufactured by a method for manufacturing a piezoelectric device having a sealing step for sealing the package containing a piezoelectric vibrating piece.
According to the above configuration, since the electrode having a fine pattern can be formed on the piezoelectric vibrating piece using the resist having a thin and uniform coating thickness, an electronic apparatus including the piezoelectric device can be miniaturized.
[0022]
According to the thirteenth aspect of the present invention, the outer shape forming step for etching the substrate to form the outer shape of the piezoelectric vibrating piece, and the resist particles for applying resist particles to the piezoelectric vibrating piece coated with the electrode film An application step, a vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporating gas of the solvent, disposing the piezoelectric vibrating piece in an atmosphere of the evaporating gas of the solvent, Dissolving the resist particles by evaporating gas to form a resist particle on the electrode film, and disposing a mask corresponding to the electrode pattern to be formed on the piezoelectric vibrating piece, and the electrode film of the piezoelectric vibrating piece A resist pattern forming step of exposing the resist formed thereon and forming a resist pattern corresponding to the electrode pattern on the piezoelectric vibrating piece; Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern; and fixing the piezoelectric vibrating piece on which the electrode is formed to a package while taking electrical conduction; This is achieved by a mobile phone device comprising a piezoelectric device manufactured by a method for manufacturing a piezoelectric device having a sealing step for sealing the package containing a piezoelectric vibrating piece.
According to the above configuration, since the electrode having a fine pattern can be formed on the piezoelectric vibrating piece using the resist having a thin and uniform coating thickness, the mobile phone device including the piezoelectric device can be downsized.
[0023]
DETAILED DESCRIPTION OF THE INVENTION
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the drawings.
<First Embodiment>
FIG. 1 is a schematic plan view illustrating a configuration example of the piezoelectric device 30, and FIG. 2 is a schematic cross-sectional view taken along line AA in FIG. 1. Hereinafter, a configuration example of the piezoelectric device 30 will be briefly described. The piezoelectric device 30 includes a piezoelectric vibrating piece 32 on which an electrode film is formed using a resist formed by using a photolithography method described later.
[0024]
The piezoelectric device 30 is, for example, a crystal resonator or a crystal oscillator in which a piezoelectric vibrating piece 32 is housed in a package 36. For example, a small information device such as an HDD (hard disk drive), a mobile computer, or an IC card, It is widely used in mobile communication devices such as mobile phones, automobile phones, and paging systems.
[0025]
1 and 2, the piezoelectric device 30 shows an example in which a crystal resonator is configured, and a piezoelectric vibrating piece 32 is accommodated in a package 36. As shown in FIG. 2, the package 36 is formed by, for example, stacking a first laminated substrate 61, a second laminated substrate 64, and a third laminated substrate 68 from below.
[0026]
In the inner space S2 of the package 36, in the vicinity of the left end portion, the second laminated substrate 64 that is exposed to the inner space S2 and constitutes the inner bottom portion is, for example, an electrode formed by nickel plating and gold plating on tungsten metallization. Portions 31, 31 are provided.
The electrode portions 31, 31 supply a driving voltage to the piezoelectric vibrating piece 32. Conductive adhesives 43, 43 are applied on the electrode portions 31, 31, and the base 51 of the piezoelectric vibrating piece 32 is placed on the conductive adhesives 43, 43. 43 are hardened. In addition, as the conductive adhesives 43 and 43, a synthetic resin agent as an adhesive component exhibiting a bonding force and containing conductive particles such as fine silver particles can be used. A system-based or polyimide-based conductive adhesive or the like can be used.
[0027]
The piezoelectric vibrating piece 32 is formed, for example, by etching a crystal. That is, the piezoelectric vibrating piece 32 has a base 51 fixed to the package 36 side as will be described later, and a pair of vibrations extending in parallel to be divided into two forks toward the right in the drawing with the base 51 as a base end. A so-called tuning fork-type piezoelectric vibrating piece having arms 34 and 35 and having a shape like a tuning fork as a whole is used.
[0028]
Grooves 56 and 57 extending in the length direction are formed in the respective vibrating arms 34 and 35 of the piezoelectric vibrating piece 32. Further, in FIG. 1, lead electrodes 52 and 53 are formed near both ends in the width direction of the end portion (left end portion in FIG. 1) of the base portion 51 of the piezoelectric vibrating piece 32. The lead electrodes 52 and 53 (22a) are similarly formed on the back surface (not shown) of the base 51 of the piezoelectric vibrating piece 32.
[0029]
These lead electrodes 52 and 53 are portions connected to the electrode parts 31 and 31 on the package side by the conductive adhesives 43 and 43 as described above. The lead electrodes 52 and 53 are connected to the excitation electrodes 54 and 55 (22a) provided in the grooves 56 and 57 of the vibrating arms 34 and 35, as shown. The excitation electrodes 54 and 55 are also formed on both side surfaces of the vibrating arms 34 and 35. With respect to one vibrating arm, for example, the vibrating arm 34, the excitation electrode 54 in the groove 57 and the side surface portions thereof are formed. The excitation electrode 55 has a polarity different from that of the excitation electrode 55.
[0030]
A lid 39 is joined to the opened upper end of the package 36 for sealing. The lid 39 is preferably sealed and fixed to the package 36, and then, as shown in FIG. 2, a laser beam L2 is radiated from the outside to a metal coating portion (described later) of the piezoelectric vibrating piece 32 to reduce the mass. In order to adjust the frequency, it is made of a material that transmits light, particularly thin glass.
[0031]
FIG. 3 is a cross-sectional view illustrating a configuration example of a vapor processing apparatus 140 as a part of the manufacturing apparatus of the piezoelectric vibrating piece 32 illustrated in FIGS. 1 and 2, and FIGS. FIG. 5 is a cross-sectional view showing an example of how a resist is formed on each electrode film 22.
The vapor processing apparatus 140 shown in FIG. 3 is also called a desiccator, for example, and includes a glass chamber 142, an inner lid 144, and a cassette 148.
The glass chamber 142 is a housing in the vapor processing apparatus 140 and is configured to block the outside and the inside thereof. The glass chamber 142 has a solvent 146 capable of dissolving the resist fine particles at the bottom thereof.
[0032]
The solvent 146 is, for example, an organic solvent, and preferably contains propylene glycol monomethyl ether acetate (hereinafter referred to as “PEGMEA”) as an example. The solvent 146 is vaporized at room temperature, for example, and becomes a solvent evaporating gas G. When the solvent 146 containing PEGMEA is employed in this way, the treatment can be performed at room temperature without particularly providing a heating means. An inner lid 144 is provided in the glass chamber 142 above the solvent 146 so as not to contact the solvent 146, and the cassette 148 can be disposed on the inner lid 144.
[0033]
The inner lid 144 is configured to allow the solvent evaporative gas G to pass therethrough, and is configured to be able to fill the glass chamber 142 with the solvent evaporating gas G obtained by vaporizing the solvent 146. The cassette 148 is configured to accommodate at least one, preferably a plurality of quartz wafers, and is configured to allow the solvent evaporating gas G to pass from the outside to the inside.
[0034]
Here, a crystal wafer as an example of a substrate has a configuration having an uneven shape, for example. Specifically, this crystal wafer is characterized in that, for example, a piezoelectric vibrator is formed. That is, the vapor processing apparatus 140 is characterized in that the resist can be formed not only on a flat object but also on an object having an uneven shape. The processing procedure of the vapor processing apparatus 140 will be described later.
[0035]
An electrode film made of Au, Cr or the like is coated on the entire surface of the quartz wafer, and resist fine particles are coated on the electrode film. As a method for applying the resist particles, various methods can be adopted as will be described later. Accordingly, at least one quartz wafer housed in the cassette 148 is placed in the solvent evaporation gas G atmosphere, and the resist fine particles formed on the electrode film on the quartz wafer can be exposed to the solvent evaporation gas G. .
[0036]
Specifically, as shown in FIG. 4A, the resist fine particles 132a applied on the electrode film 22 are dissolved by the solvent evaporation gas G as shown in FIG. Repeat to become one lump. Further, when a predetermined time elapses, the resist fine particles 132b constitute almost one plate-like electrode resist 137 on the electrode film 22, as shown in FIG. 4C. Since the electrode resist 137 is not in the form of particles due to the above-described dissolution, the thickness is almost uniform in any part. In the present embodiment, the process of using the resist fine particles 132a applied in this manner as the electrode resist 137 is referred to as “vapor process”.
[0037]
Here, conditions for the vapor treatment will be described.
The vapor temperature is about 23 ° C., and the pressure is normal pressure (1 atm). The vapor treatment time (vapor time) ranges from 20 minutes at which the surface becomes smooth, but the electrode resist 137 becomes transparent, for example, from at least 3 minutes where the agglomerates remain, and the surface is smoothed. It is desirable that Even if the vapor treatment is performed for more than 20 minutes, the electrode resist 137 hardly changes. Moreover, as an appropriate time of the vapor time, for example, it is desirable that it is 10 minutes or more. This is a period of time that eliminates the lump of resist fine particles 132a.
[0038]
In this way, the electrode resist 137 having a smooth and uniform coating thickness is cured by the solvent 146 being blown off by a pre-baking process, for example, heating at 90 ° C. for about 15 minutes, and is further cooled and completed. Here, as a cooling process, for example, it is left at room temperature for about 15 minutes. Needless to say, as the solvent 146 shown in FIG. 3, a solvent that volatilizes by heating may be employed instead of the solvent that volatilizes at room temperature as described above. In such a case, it is desirable that the vapor processing apparatus 140 includes a heating unit for heating the solvent 146.
According to such a configuration, the vapor processing apparatus 140 can batch process the crystal wafers in units of the cassette 148, so that the processing capacity is improved as compared with the conventional processing, for example, one by one. can do.
[0039]
Examples of the combination of the solvent 146 suitable for the solvent of the electrode resist 137 include ECA, PEGMEA, acetone, ethyl lactate, and butyl acetate with respect to ethyl cellosolve acetate (hereinafter referred to as “ECA”). it can. Moreover, as a combination of the solvent 146 suitable for the solvent of the electrode resist 137, for example, ECA, PEGMEA, acetone, ethyl lactate and butyl acetate can be cited for ethyl acetate / butyl acetate. Further, examples of the combination of the solvent 146 suitable for the solvent of the electrode resist 137 include ECA, PEGMEA, acetone, ethyl lactate, and butyl acetate with respect to PEGMEA.
[0040]
For example, since the positive electrode resist 137 uses, for example, a novolac resin as a solid content, a solvent that dissolves the novolak resin can be used to various extents by changing the vapor conditions to the novolac resin. Types can be used. In this respect, the PEGMEA is optimal in that it can be used at normal temperature for any positive electrode resist 137, for example.
[0041]
The piezoelectric device 30 including the piezoelectric vibrating piece 32 is configured as described above. Next, an example of a procedure of a method for manufacturing the piezoelectric device 30 will be described with reference to FIGS. In the following description, formation of electrodes using a photolithography process that mainly employs a photolithography method among the manufacturing methods of the piezoelectric vibrating piece 32 included in the manufacturing method of the piezoelectric device 30 will be described.
[0042]
FIG. 5 is a flowchart showing an example of the procedure of the method of manufacturing the piezoelectric vibrating piece 32, and FIGS. 6 to 8 are cross-sectional views showing examples of the procedure of FIG. In this embodiment, it is exemplified that the electrodes are formed on both surfaces of the substrate 71 (quartz wafer). However, since the electrodes formed on both surfaces have substantially the same configuration, FIG. In FIG. 8, only the upper surface will be mainly described.
[0043]
With reference to these drawings, a method of manufacturing the piezoelectric vibrating piece 32 will be described.
<Process for forming the outer shape of the quartz crystal vibrating piece>
Next, in step ST0 shown in FIG. 5, in FIG. 6A, a substrate 71 made of a quartz material having a size capable of separating a plurality or a plurality of piezoelectric vibrating pieces 32 is prepared, and polishing is performed on both surfaces of the substrate 71. For example, both surfaces are mirror-finished.
[0044]
In step ST1 shown in FIG. 5, a corrosion-resistant film 72 is formed on the substrate 71 by a technique such as sputtering or vapor deposition as shown in FIG. As shown in the figure, a corrosion-resistant film 72 is formed on the surface of the quartz substrate 71. The corrosion-resistant film 72 is composed of, for example, a chromium layer as a base layer and a gold coating layer coated thereon. Here, the chromium layer has a coating thickness of 50 μm, for example, and the coating layer has a coating thickness of 50 μm, for example.
[0045]
Next, in step ST2, a resist 73 is applied to the entire surface as shown in FIG. 6B using, for example, spin coating, and then a mask 79 is arranged as shown in FIG. 6C. In step ST3, a portion of the resist 73 outside the shape of the piezoelectric vibrating piece 32 corresponding to the outer shape of the piezoelectric vibrating piece 32 is exposed, and in step ST4, the resist 73 in the exposed portion is developed. As shown in FIG. 6D, the exposed portion of the resist 73 is removed.
[0046]
Subsequently, in step ST5, as shown in FIG. 6E, the exposed corrosion-resistant film 72 is removed by etching with a corresponding etching solution. Next, in step ST6, as shown in FIG. 7A, etching is performed with an etching solution corresponding to the substrate 71, and the outer shape of the substrate 71 is etched. In this way, the outer shape of the piezoelectric vibrating piece 32 is patterned. Next, in step ST7, the resist 73 is removed as shown in FIG. 7B, and the exposed substrate 71 is hooked along the outer shape of the corrosion-resistant film 72 as shown in FIG. 7B. Etching with acid or the like. In step ST8, the exposed corrosion-resistant film 72 is peeled off.
[0047]
Next, although not shown, the exposed material portion of the quartz substrate 71 is formed by, for example, half-etching. Further, by removing the corrosion-resistant film 72, the formation of the outer shape of the piezoelectric vibrating piece 32 is completed except for the electrode film portion as shown in FIG. 7B. In this state, the substrate 71 has an uneven shape made of the piezoelectric vibrating piece 32.
[0048]
<Electrode film formation process>
Subsequently, an electrode is formed on the piezoelectric vibrating piece 32.
Next, in step ST9, as shown in FIG. 7C, the electrode film 22 is covered with a metal serving as an electrode by sputtering or the like on the entire surface of the crystal piece (substrate 71) on which no electrode is formed. For example, the electrode film 22 covers Au with Cr as an underlayer.
[0049]
<Resist particle application step>
Next, in step ST10, an electrode resist 137 is formed on the electrode film 22 as shown in FIG. In this step ST10, resist particles are applied to the substrate 71 coated with the electrode film 22. Specifically, in step ST10, a liquid resist solvent is used as resist fine particles on the mist by, for example, a spray coating method, and the resist fine particles are applied to the electrode film 22 on the substrate 71. This state is illustrated in FIG. 4 (A). The coating thickness of the resist fine particles applied to the electrode film 22 of the substrate 71 is, for example, 2 μm.
[0050]
<Resist particle dissolution step>
Next, in step ST10, the above-described vapor processing is performed using the vapor processing apparatus 140 shown in FIG. In this vapor treatment, first, at least one substrate 71 having a concavo-convex shape in which the outer shape of the piezoelectric vibrating piece is formed is stored in the cassette 148 and placed on the inner lid 144 in the glass chamber 142. As described above, the solvent 146 that can dissolve the resist fine particles is present at the bottom of the lower portion of the inner lid 144 in the glass chamber 142. As described above, the solvent 146 is vaporized even at room temperature, for example, and the solvent evaporating gas G passes through the inner lid 144 and fills the glass chamber 142. That is, the inside of the glass chamber 142 is an atmosphere of the solvent evaporating gas G, and the cassette 148 is exposed to the atmosphere of the solvent evaporating gas G.
[0051]
The cassette 148 is configured to pass the solvent evaporation gas G, and the substrate 71 in the cassette 148 reacts with the solvent evaporation gas G. Therefore, the electrode film-like resist fine particles of the substrate 71 are dissolved by the solvent evaporating gas G, and the adjacent resist fine particles 132a are integrated as shown in FIG. The integrated resist fine particles 132a are allowed to stand, for example, at room temperature for about 20 minutes, so that a single plate-like electrode resist 137 is formed on the electrode film 22 as shown in FIG. . The electrode resist 137 has almost the same coating thickness at any portion due to the surface tension of the dissolved resist fine particles 132a.
The electrode resist 137 is pre-baked by being heated at 90 ° C. for about 15 minutes, for example. Thereafter, the pre-baked electrode resist 137 is cooled, for example, by being left at room temperature for 15 minutes or more.
[0052]
<Resist pattern formation step>
Next, in step ST11, as shown in FIG. 7E, patterning is performed using a mask 81 corresponding to the electrode pattern of the electrode to be formed on the piezoelectric vibrating piece 32, and exposure is performed. As this exposure condition, for example, the g-line is 200 mJ / cm. ² Exposure is performed by irradiating to some extent. Next, in step ST12, as shown in FIG. 8A, the electrode resist 137 exposed by exposure is removed.
[0053]
Next, in step ST13, the electrode film 22 exposed by removing the electrode resist 137 is removed by etching in the order of the gold coating layer and the chromium layer, as shown in FIG. 8B. Next, in step ST14, as shown in FIG. 8C, by completely removing the electrode resist 137, the piezoelectric vibrating piece 32 on which the electrode 22a corresponding to the desired electrode pattern is formed is completed.
[0054]
<Sealing step>
Next, conductive adhesives 43 and 43 are applied on the electrode portions 31 and 31 of the package 36 in FIG. 1, and the base 51 of the piezoelectric vibrating piece 32 is placed on the conductive adhesives 43 and 43. Thus, the conductive adhesives 43, 43 are cured. In this way, the piezoelectric vibrating piece 32 can be electrically connected to the package 36 side.
[0055]
As shown in FIG. 2, a lid 39 is joined to the opened upper end of the package 36 so as to be sealed. Preferably, the lid 39 is preferably sealed and fixed to the package 36 and then irradiated with laser light L2 from the outside to a metal coating portion to be described later of the piezoelectric vibrating piece 32 to perform frequency adjustment by a mass reduction method. It is made of a material that transmits light, particularly thin glass.
[0056]
<Verification>
FIG. 9 is a diagram showing an example of the coating thickness of the electrode resist formed on the electrode film on the substrate by the photolithography method according to this embodiment. FIG. 9 illustrates the case where the left side characteristic does not employ the photolithography method according to the present embodiment, and the right side characteristic illustrates the case where the photolithography method according to the present embodiment is employed. In addition, in FIG. 9, for each of these characteristics, the coating thickness of the electrode resist formed on the electrode film of the vibrating arm 34 in FIG. 1 and the coating thickness of the electrode resist formed on the electrode film on the base 51 are also shown. Is shown.
[0057]
Referring to FIG. 9, the applied thickness of the electrode resist formed on the electrode film on the base is about 1.5 μm on average when the photolithography method according to the present embodiment is not employed, but is employed. In some cases, the average is about 1.3 μm. Therefore, the application thickness of the electrode resist formed on the electrode film on the base is such that when the photolithography method according to the present embodiment is adopted, the electrode resist spreads more uniformly on the entire surface of the electrode film on the base than in the past. Slightly thin (hereinafter referred to as “self-leveling”).
[0058]
On the other hand, the coating thickness of the electrode resist 137 formed on the electrode film on the vibrating arm is about 3.9 μm on average when the photolithography method according to the present embodiment is not employed, whereas when applied, The average is about 3.2 μm. Therefore, the coating thickness of the electrode resist formed on the electrode film on the vibrating arm is such that when the photolithography method according to the present embodiment is employed, the electrode resist spreads very uniformly over the entire surface of the electrode film on the vibrating arm. , Get thinner.
[0059]
Thus, the ratio of the electrode resist coating thickness of the electrode film on the vibrating arm and the electrode resist coating thickness of the electrode film on the base is greater when the photolithography method according to the present embodiment is used than before. Get closer to 1: 1. For this reason, when the photolithography method according to the present embodiment is employed, the difference in coating thickness of the electrode resist formed on the electrode film on the piezoelectric vibrating piece 32 is smaller between the vibrating arm side and the base side than in the past.
[0060]
Therefore, the piezoelectric vibrating reed 32 can make the coating thickness of the electrode resist formed on the electrode film uniform, as compared with the prior art. Thus, by using the electrode resist having a uniform coating thickness as a whole, the fine electrode 22a is finally formed on the piezoelectric vibrating piece 32, and the piezoelectric vibrating piece 32 can be reduced in size.
[0061]
In addition, the piezoelectric vibrating piece 32 can exhibit the following effects in addition to the fact that the coating thickness of the electrode resist on the electrode film can be made uniform as a whole at the time of manufacture.
FIG. 10 is a characteristic diagram showing an example of the surface roughness Ra of the electrode resist formed on the electrode film on the substrate according to the present embodiment. FIG. 10 illustrates the case where the left side characteristic does not employ the photolithography method according to the present embodiment, and the right side characteristic illustrates the case where the photolithography method according to the present embodiment is employed. In addition, in FIG. 10, for these characteristics, the surface roughness Ra of the electrode resist formed on the electrode film of the vibrating arm 34 of FIG. 1 and the electrode resist formed on the electrode film on the base 51 are also shown. The surface roughness Ra is illustrated.
[0062]
Referring to FIG. 10, the surface roughness Ra of the electrode resist formed on the electrode film on the base is about 0.063 μm on average although there is a numerical variation when the photolithography method according to the present embodiment is not adopted. When it is adopted, the average is about 0.24 μm although there is a variation in numerical values. Accordingly, the surface roughness Ra of the electrode resist formed on the electrode film on the base portion is such that the electrode resist is somewhat uniform over the entire surface of the electrode film on the base portion when the photolithography method according to this embodiment is employed. It turns out that it can be made small by expanding.
[0063]
On the other hand, the surface roughness Ra of the electrode resist formed on the electrode film on the vibrating arm is about 0.030 μm on average although there is variation in numerical values when the photolithography method according to the present embodiment is not adopted. On the other hand, when it is adopted, the average value is about 0.009 μm although there are variations in numerical values. Therefore, the surface roughness Ra of the electrode resist formed on the electrode film on the vibrating arm is such that the electrode resist is very uniform over the entire surface of the electrode film on the vibrating arm when the photolithography method according to this embodiment is employed. It becomes clear that it becomes small because it spreads.
[0064]
As described above, the ratio of the surface roughness Ra of the electrode resist of the electrode film on the vibrating arm to the surface roughness Ra of the electrode resist of the electrode film on the base portion has conventionally employed the photolithography method according to this embodiment. The case is closer to 1: 1. For this reason, when the photolithography method according to the present embodiment is employed, the surface roughness Ra of the electrode resist formed on the electrode film on the piezoelectric vibrating piece 32 is different between the vibrating arm 34 side and the base 51 side than before. It turns out that becomes small.
[0065]
Therefore, the piezoelectric vibrating reed 32 can make the surface roughness Ra of the electrode resist formed on the electrode film uniform, as compared with the prior art. Thus, the fine electrode 22a can be formed on the piezoelectric vibrating piece 32 by using the electrode resist having the uniform surface roughness Ra as a whole.
[0066]
According to the first embodiment of the present invention, the resist fine particles 132a as applied on the substrate 71 coated with the electrode film 22 do not have a uniform coating thickness. As a result of dissolution by the evaporating gas G, the irregularities and gaps of the resist fine particles 132a are eliminated, and the coating thickness becomes uniform as a whole by the surface tension, and a thin resist is formed on the electrode film 22 of the substrate 71. Therefore, it is possible to form the fine electrode 22a on the piezoelectric vibrating piece 32, and the size can be reduced. In addition, the surface of the formed electrode resist 137 is smoothed by the surface tension generated by the dissolution of the resist fine particles 132a.
[0067]
Second Embodiment
In the photolithography method according to the second embodiment of the present invention, the same reference numerals as those in the first embodiment in FIGS. 1 to 10 have almost the same configuration. The description will be omitted by using the same reference numerals as those in FIG. 10, and different points will be mainly described.
[0068]
In the photolithography method as the second embodiment, for example, an electrostatic coating method is used instead of the coating method of the resist fine particles 132a used in the resist particle coating step of the first embodiment. In this electrostatic coating method, an electrode film coated on a substrate is charged, and resist particles charged to a polarity different from that of the electrode film are electrostatically applied to the electrode film.
[0069]
FIG. 11 is a schematic cross-sectional view showing a configuration example of an ultrafine particle generator 130 that forms a resist by applying resist particles to the base 51 and the vibrating arms 34 and 35 using an electrostatic coating method.
The ultrafine particle generator 130 includes a fine particle generator 131, a high voltage power source 138, and a coating chamber 133.
[0070]
The fine particle generator 131 generates submicron resist fine particles 132a containing a photoresist solvent 132 used in the photolithography process. The generated resist fine particles 132a are carried to the nozzle part 134 of the coating chamber 133 by an inert gas carrier gas such as air or nitrogen. A high voltage power supply 138 is connected to the coating chamber 133.
[0071]
The high-voltage power supply 138 has a function of applying a negative high voltage of about 30 kV to 100 kV to the nozzle part 134 of the coating chamber 133 to negatively charge the resist fine particles 132a and generate negatively charged resist fine particles 132b. . The coating chamber 133 includes a positive electrode 136 in addition to the nozzle part 134. The positive electrode 136 is grounded, and a conductive member disposed on the positive electrode 136 is configured to be grounded. The nozzle unit 134 has a function of applying the resist fine particles 132b carried by the carrier gas to the vibrating arms 34 and 35 as an example of an object disposed on the positive electrode 136 in the coating chamber 133 by an electrostatic coating method. Have Needless to say, the object may be not only the vibrating arms 34 and 35 but also other electrode forming portions such as the base 51.
[0072]
An electrode film 22 is formed on the entire surface of the vibrating arm 34 and the like disposed on the positive electrode 136 in advance, and an electrode resist 137 is formed on the electrode film by applying resist fine particles 132b. . The electrode resist 137 is for forming an electrode film previously formed on the vibrating arm 34 and the like into a predetermined pattern through a photolithography process.
[0073]
As described above, the ultrafine particle generator 130 can adjust the film thickness of the electrode resist 137 formed on the vibrating arm 34 and the like in accordance with the voltage applied by the high voltage power supply 138.
An outline of a method for forming the electrode resist 137 on the vibrating arm 34 and the like by the ultrafine particle generator 130 will be further described. In the following description, as an example, the electrode resist 137 is formed on the electrode film 22 on the vibrating arm 34.
[0074]
FIGS. 12A to 12C are cross-sectional views showing an example of a procedure for forming the electrode resist 137 on the electrode film 22 on the vibrating arm 34.
As shown in FIG. 11, a negative high voltage is applied to the nozzle portion 134, and the electrode film 22 of the vibrating arm 34 is grounded. Accordingly, a positive charge is charged on the electrode film 22 on the vibrating arm 34 in response to the negative high voltage of the nozzle portion 134 shown in FIG.
[0075]
Then, the nozzle portion 134 that moves relative to the vibrating arm 34 applies the resist fine particles 132b to the electrode film 22 on the vibrating arm 34 as shown in FIG. 12B, and the resist fine particles 132b vibrate. The electrode film 22 on the arm 34 is attracted by the electric charge of the electrode film 22 and applied to the electrode film 22 on the vibrating arm 34. Then, as shown in FIG. 12C, an electrode resist 137 made of the resist fine particles 132b is formed on the electrode film 22 on the vibrating arm 34 by the above-described method.
[0076]
According to the second embodiment of the present invention, substantially the same effect as that of the first embodiment can be exhibited. In addition, in the case where the electrostatic coating method is adopted, the electrode film on the vibrating arm 34 is used. 22 and even if there is some unevenness in the resist fine particles 132b applied to the electrode film 22 on the base 51, the resist fine particles 132b dissolve to form an electrode resist 137 having a uniform coating thickness on the electrode film 22. It becomes like this. Accordingly, it is possible to form the electrode 22a having a fine pattern on the substrate 71 using a photolithography method that has been impossible in the past.
[0077]
FIG. 13 is a diagram illustrating a schematic configuration of a digital mobile phone device as an example of an electronic apparatus using the piezoelectric device 30 according to the above-described embodiment of the present invention.
In the figure, a microphone 308 for receiving the voice of the sender and a speaker 309 for outputting the received content as a voice output are provided. CPU (Central Processing Unit) 301 is provided.
[0078]
In addition to modulation and demodulation of transmission / reception signals, the CPU 301 controls an information input / output unit 302 including an LCD as an image display unit and operation keys for inputting information, and a memory 303 including a RAM and a ROM. It has become. For this reason, the piezoelectric device 30 is attached to the CPU 301, and its output frequency is used as a clock signal suitable for the control content by a predetermined frequency dividing circuit (not shown) incorporated in the CPU 301. ing. The piezoelectric device 30 attached to the CPU 301 may not be a single device such as the piezoelectric device 30 but may be an oscillator that combines the piezoelectric device 30 and the like with a predetermined frequency dividing circuit or the like.
[0079]
The CPU 301 is further connected to a temperature compensated crystal oscillator (TCXO) 305, and the temperature compensated crystal oscillator 305 is connected to the transmitter 307 and the receiver 306. Thus, even if the basic clock from the CPU 301 fluctuates when the environmental temperature changes, it is corrected by the temperature compensated crystal oscillator 305 and supplied to the transmission unit 307 and the reception unit 306.
As described above, by using the piezoelectric device 30 according to the above-described embodiment in an electronic apparatus such as the digital cellular phone device 300 including the control unit, excellent vibration characteristics can be achieved even if the device is small. Therefore, an accurate clock signal can be generated.
[0080]
The present invention is not limited to the above embodiment, and various modifications can be made without departing from the scope of the claims. For example, a part of each configuration of the above embodiment can be omitted, or can be arbitrarily combined so as to be different from the above.
The present embodiment is not limited to the above-described embodiment, and can be applied to the application of an application other than the above to the application. Moreover, although the said embodiment illustrated forming a resist when forming an electrode in a piezoelectric vibrating piece, it is not restricted to this, The resist at the time of forming the electrode of a semiconductor element and other electronic components is formed. Can also be applied.
[Brief description of the drawings]
FIG. 1 is a schematic plan view showing a configuration example of a piezoelectric device.
FIG. 2 is a schematic cross-sectional view taken along line AA in FIG.
FIG. 3 is a cross-sectional view showing a configuration example of a vapor processing apparatus.
FIG. 4 is a cross-sectional view showing an example of how a resist is formed on an electrode film.
FIG. 5 is a flowchart showing an example of a procedure of a method for manufacturing a piezoelectric vibrating piece.
6 is a cross-sectional view showing an example specifically illustrating the procedure of FIG. 5;
7 is a cross-sectional view showing an example specifically illustrating the procedure of FIG. 5;
FIG. 8 is a cross-sectional view showing an example specifically illustrating the procedure of FIG. 5;
FIG. 9 is a characteristic diagram showing an example of a coating thickness of a resist formed on an electrode film.
FIG. 10 is a characteristic diagram showing an example of the surface roughness of a resist formed on an electrode film.
FIG. 11 is a schematic cross-sectional view showing a configuration example of an ultrafine particle generator.
FIG. 12 is a cross-sectional view illustrating an example of a procedure for forming a resist on the electrode film of the vibrating arm.
FIG. 13 is a diagram showing a schematic configuration of a digital mobile phone device as an example of an electronic apparatus.
FIG. 14 is a cross-sectional view showing an example of a procedure for forming an electrode using a resist by a conventional photolithography method.
[Explanation of symbols]
22 ... Electrode film, 22a ... Electrode, 30 ... Piezoelectric device, 32 ... Piezoelectric vibrating piece, 71 ... Substrate, 132 ... Resist solvent (liquid resist solvent), 132a ..Resist fine particles (resist particles), 132b... Resist fine particles charged with negative charges (resist particles), 137... Electrode resist (resist), 140. ... Evaporation gas of solvent

Claims (13)

A resist particle application step for applying resist particles to a substrate coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the substrate in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, a resist particle dissolution step;
Resist pattern formation in which a mask corresponding to the electrode pattern to be formed is disposed on the substrate, the resist formed on the electrode film of the substrate is exposed, and a resist pattern corresponding to the electrode pattern is formed on the substrate A photolithography method comprising: steps. 2. The photolithography method according to claim 1, wherein in the resist particle application step, a liquid resist solvent is used as the mist-like resist particles, and the resist particles are applied to the electrode film on the substrate. The resist particle coating step includes charging the electrode film coated on the substrate, and electrostatically coating the electrode film with the resist particles charged to a polarity different from the electrode film. Item 2. The photolithography method according to Item 1. 4. The photolithography method according to claim 1, wherein the substrate has a concavo-convex shape or a through hole. The photolithography method according to claim 1, wherein the solvent contains propylene glycol monomethyl ether acetate. An outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating piece;
A resist particle application step of applying resist particles to the piezoelectric vibrating piece coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the piezoelectric vibrating piece in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, and a resist particle dissolution step,
A mask corresponding to the electrode pattern to be formed is disposed on the piezoelectric vibrating piece, the resist formed on the electrode film of the piezoelectric vibrating piece is exposed, and a resist pattern corresponding to the electrode pattern is formed on the piezoelectric vibrating piece. A resist pattern forming step to be formed;
And a step of forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern. A resist particle application step for applying resist particles to a substrate coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the substrate in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, a resist particle dissolution step;
Resist pattern formation in which a mask corresponding to the electrode pattern to be formed is disposed on the substrate, the resist formed on the electrode film of the substrate is exposed, and a resist pattern corresponding to the electrode pattern is formed on the substrate Steps,
An electrode forming step of forming an electrode corresponding to the electrode pattern on the substrate using the resist pattern. A semiconductor device manufactured by a method for manufacturing a semiconductor device, comprising: A resist particle application step for applying resist particles to a substrate coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the substrate in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, a resist particle dissolution step;
Resist pattern formation in which a mask corresponding to the electrode pattern to be formed is disposed on the substrate, the resist formed on the electrode film of the substrate is exposed, and a resist pattern corresponding to the electrode pattern is formed on the substrate Forming an electrode corresponding to the electrode pattern on the substrate using the step and the resist pattern; and
And a sealing step of fixing the substrate on which the electrode is formed to a package while taking electrical continuity, and sealing the package containing the substrate. Electronic components. An outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating piece;
A resist particle application step of applying resist particles to the piezoelectric vibrating piece coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the piezoelectric vibrating piece in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, and a resist particle dissolution step,
A mask corresponding to the electrode pattern to be formed is disposed on the piezoelectric vibrating piece, the resist formed on the electrode film of the piezoelectric vibrating piece is exposed, and a resist pattern corresponding to the electrode pattern is formed on the piezoelectric vibrating piece. A resist pattern forming step to be formed;
Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern; and
A piezoelectric device comprising: a sealing step of fixing the piezoelectric vibrating piece on which the electrode is formed to a package while taking electrical conduction, and sealing the package containing the piezoelectric vibrating piece. Production method. An outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating piece;
A resist particle application step of applying resist particles to the piezoelectric vibrating piece coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the piezoelectric vibrating piece in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, and a resist particle dissolution step,
A mask corresponding to the electrode pattern to be formed is disposed on the piezoelectric vibrating piece, the resist formed on the electrode film of the piezoelectric vibrating piece is exposed, and a resist pattern corresponding to the electrode pattern is formed on the piezoelectric vibrating piece. A resist pattern forming step to be formed;
A piezoelectric vibrating piece manufactured by a method of manufacturing a piezoelectric vibrating piece comprising: an electrode forming step of forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern. An outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating piece;
A resist particle application step of applying resist particles to the piezoelectric vibrating piece coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the piezoelectric vibrating piece in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, and a resist particle dissolution step,
A mask corresponding to the electrode pattern to be formed is disposed on the piezoelectric vibrating piece, the resist formed on the electrode film of the piezoelectric vibrating piece is exposed, and a resist pattern corresponding to the electrode pattern is formed on the piezoelectric vibrating piece. A resist pattern forming step to be formed;
Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern; and
The piezoelectric vibrating piece having the electrode formed thereon is manufactured by a method of manufacturing a piezoelectric device having a sealing step of fixing the piezoelectric vibrating piece with electrical continuity to a package and sealing the package incorporating the piezoelectric vibrating piece. A piezoelectric device characterized by that. An outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating piece;
A resist particle application step of applying resist particles to the piezoelectric vibrating piece coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the piezoelectric vibrating piece in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, and a resist particle dissolution step,
A mask corresponding to the electrode pattern to be formed is disposed on the piezoelectric vibrating piece, the resist formed on the electrode film of the piezoelectric vibrating piece is exposed, and a resist pattern corresponding to the electrode pattern is formed on the piezoelectric vibrating piece. A resist pattern forming step to be formed;
Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern; and
The piezoelectric vibrating piece having the electrode formed thereon is manufactured by a method of manufacturing a piezoelectric device having a sealing step of fixing the piezoelectric vibrating piece with electrical continuity to a package and sealing the package incorporating the piezoelectric vibrating piece. An electronic apparatus comprising a piezoelectric device. An outer shape forming step of etching the substrate to form the outer shape of the piezoelectric vibrating piece;
A resist particle application step of applying resist particles to the piezoelectric vibrating piece coated with an electrode film;
A vapor phase step of vaporizing a solvent capable of dissolving the resist particles into an evaporation gas of the solvent; and
Disposing the piezoelectric vibrating piece in an atmosphere of the solvent evaporation gas, dissolving the resist particles with the solvent evaporation gas to form a resist on the electrode film, and a resist particle dissolution step,
A mask corresponding to the electrode pattern to be formed is disposed on the piezoelectric vibrating piece, the resist formed on the electrode film of the piezoelectric vibrating piece is exposed, and a resist pattern corresponding to the electrode pattern is formed on the piezoelectric vibrating piece. A resist pattern forming step to be formed;
Forming an electrode corresponding to the electrode pattern on the piezoelectric vibrating piece using the resist pattern; and
The piezoelectric vibrating piece having the electrode formed thereon is manufactured by a method of manufacturing a piezoelectric device having a sealing step of fixing the piezoelectric vibrating piece with electrical continuity to a package and sealing the package incorporating the piezoelectric vibrating piece. A cellular phone device comprising a piezoelectric device.

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