JP2005003494A - Panel sensor and information equipment having the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a panel sensor also having functions other than, for example a touch input function, without adding any new configuration. <P>SOLUTION: Force operating on the panel is added to a panel support section 14 provided at a diaphragm section 11. When the applied force is relatively small, the force can be detected by detecting the displacement of a thin film at the diaphragm section 11. Conversely, when the applied force is relatively large, the diaphragm section 11 itself is displaced. The displacement of the diaphragm section 11 is detected by detecting the deflection of beam sections 13c, 13d for connecting the diaphragm section 11 and an inner frame 25, and the deflection of beam sections 13a, 13b for connecting the inner frame 25 and a fixed frame 17, and hence the level of the applied force can be detected. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【００６１】
【数２】

【００６２】
上記説明において、点Ａを原点として点Ｒの座標を決定したが、座標軸のとり方はこれに限定されるものではない。例えば、パネル３の対向線が交わる点、すなわちパネル３の中心を原点（０、０）として、パネル３の対角線を座標軸としてもよい。すなわち、座標軸のとり方についてはパネルセンサの使用方法等から決定すればよい。
【００６３】
ここで、パネル３に配される力センサ４の数について説明する。パネル３の面を平面として確定するには幾何学上３点以上が必要となる。力センサ４を配置する数を多くすればするほど、１つの力センサ４あたりにかかる力が小さくなるため、力の検出レベルが低下することとなる。すなわち、力センサ４の数を多くすると、力センサ４による力の検出結果の信頼性が低下するなどの不利な点が生じる。
【００６４】
一方、パネル３に配される力センサ４の数が３つの場合には、次のような問題が生じる。力センサ４が配置されている３点を頂点とする三角形の内部に力が加えられた場合には、この３点にかかる分力の符号は一致することとなる。しかしながら、力センサが配置される３点を頂点とする三角形の外部に力が加えられる場合は、この３点の分力の符号は一致しない。すなわち、三角形の外部に力が加えられると、力が加えられた点に近い２点を結んでできる直線を境界として、力が加えられた点とは反対側にある１点の分力が引っ張り側となる。この場合、力センサ４は、圧縮力と引っ張り力の両方を検出できることが要求されることとなる。すなわち、パネルにおける力センサ４の配置が３点の場合は、各パネルに作用した力の位置を特定する演算が複雑となるという問題がある。
【００６５】
上記した問題点から鑑みて、力センサ４の数の決定については、力センサ４の検出能力や力センサ４が備えられるパネルの面積、形状、重量等、上記力センサ４の使用される環境に応じて決定すればよいことになる。一般的には、例えば携帯モバイル機器等に使用されるパネルは、パネル３のように四角形状である場合がほとんどである。この場合、上記で説明したようにパネル３の角近傍の４点に力センサ４を配する構成は、力の作用点を求める演算は簡単であるとともに、各力センサ４にかかる分力の大きさも確保することができるというメリットを有している。
【００６６】
（力センサにおける力検出方法）
以下に、上記した力センサ４における力検出方法の実施例として、微小な押付力の検出方法と、比較的大きな押付力の検出方法とに分けて説明する。
【００６７】
（微小な押付力の検出方法）
微少な力がパネル３に対して作用する場合、力センサ４は、薄膜１６ａの変形を検出することによって力の検出を行う。薄膜１６ａとダイアフラム部基板１５との間には間隙があり、薄膜１６ａが伸張変形することによって、パネル支持部１４は自由にＺ方向に変位することができる。すなわち、パネル３に対して微小な力がＺ方向に作用する場合、薄膜１６ａはその力の値に応じてＺ方向に変位することになる。そして、薄膜１６ａが変位すると、薄膜１６ａとダイアフラム部基板１５の上面との間隔が変化するため、その間隔の変化を検出すればパネルに作用する微小な力を検出することができる。
【００６８】
ここで、薄膜１６ａとその下面１５との間隔変化を検出する方法について、図５（ａ）および図５（ｂ）を参照して説明する。なお、図５（ａ）はパネル３に力が作用していない状態を示しており、図５（ｂ）はパネル３に力が作用する場合、すなわち薄膜１６ａに力が作用している状態を示している。
【００６９】
図５（ａ）に示すように、ダイアフラム部基板１５の上面には、薄膜１６ａと対向するように電極３１が設けられている。また、薄膜１６ａにも電極３１と対向するように電極（図示せず）が設けられている。そして、ダイアフラム部基板１５に設けられている電極３１と、薄膜１６ａに設けられている電極とによってコンデンサが形成されている。
【００７０】
ここで、図５（ｂ）にて示されるように、パネル３に力が作用すると、その力は薄膜１６ａにも作用し、結果として薄膜１６ａに設けられている電極と、ダイアフラム部基板１５に設けられている電極３１との間隔が変化する。すなわち、パネル３に力が作用することによって、上記コンデンサの静電容量が変化することになる。したがって、このコンデンサの静電容量の変化量を検出すれば、薄膜１６ａに設けられている電極と、ダイアフラム部基板１５に設けられている電極３１との間隔の変化を検出することができ、これに基づいて、力センサ４に作用している力の大きさを計測することができる。なお、上記コンデンサの静電容量の変化量を検出するには、薄膜１６ａに設けられている電極と、ダイアフラム部基板１５に設けられている電極３１との間の電位差、および、間隔の変化に伴う電流の変化を計測すればよい。
【００７１】
また、上記の構成において、薄膜１６ａの厚さや面積等を変えたり、張力を変えたりすることによって、測定できる力の大きさを任意に設定することが可能である。
【００７２】
（比較的大きな押付力の検出方法）
次に、比較的大きな力がパネル３に作用する場合の力センサ４による力検出方法について図６（ａ）および図６（ｂ）を参照して説明する。図６（ａ）は、コンデンサ方式によって力を検出する構成例を示しており、図６（ｂ）は、ピエゾ抵抗素子を用いて力を検出する構成例を示している。
【００７３】
まず、図６（ａ）に示す構成について説明する。パネル３に対して加わる力が大きくなっていくと、薄膜１６ａとダイアフラム部基板１５との間隔が狭くなっていき、ついには、薄膜１６ａとダイアフラム部基板１５とが密着することになる。さらにパネル３に対して加わる力が大きくなると、梁部１３ａ・１３ｂ・１３ｃ・１３ｄがＺ方向にたわむことによって、ダイアフラム部１１自体がＺ方向に移動することになる。したがって、ダイアフラム部１１のＺ方向に対する移動量を検出することによって、力センサ４に対して加えられている力を検出することができる。
【００７４】
図６（ａ）に示す構成においては、力センサ４は、ダイアフラム部１１のＺ方向に対する移動量を検出するために、ダイアフラム部１１の下側に配置される土台３３の上面に、ダイアフラム部１１と対向する位置にて電極３２が設けられている。また、ダイアフラム部基板１５の下面には、電極３２と対向するように電極（図示せず）が設けられている。そして、土台３３に設けられている電極３２と、ダイアフラム部１１に設けられている電極とによってコンデンサが形成されている。
【００７５】
上記した力センサ４の構成において、ダイアフラム部１１にＺ方向の大きな力が作用すると、梁部１３ａ、１３ｂがたわみ、これによってダイアフラム部１１がＺ方向へ変位する。このように、ダイアフラム部１１がＺ方向に変位すると、台３３に設けられている電極３２と、ダイアフラム部１１に設けられている電極との間隔が変化することになる。すなわち、上記コンデンサの静電容量が変化することになる。したがって、このコンデンサの静電容量の変化量を検出すれば、ダイアフラム部１１のＺ方向の変位量を検出することができ、これに基づいて、力センサ４に作用している力の大きさを計測することができる。
【００７６】
次に、図６（ｂ）に示す構成について説明する。上記のように、力センサ４に対して比較的大きな力が加わると、梁部１３ａ・１３ｂ・１３ｃ・１３ｄがＺ方向にたわむことになる。そこで、この梁部１３ａ・１３ｂ・１３ｃ・１３ｄのたわみ量を検出することによって、力センサ４に対して加えられている力を計測することができる。
【００７７】
図６（ｂ）に示す構成では、梁部１３ａ・１３ｂの上面側において、固定枠部材１７ａ・１７ｂとの接続部に近い位置Ａと、内部枠部材２５ａ・２５ｂとの接続部に近い位置Ｂとに、ピエゾ抵抗素子を設けている。ピエゾ抵抗素子は、力が加えられることによって変形する際に、電気分極によって電荷を生じさせるものである。つまり、ピエゾ抵抗素子に生じる電荷を測定することによって、梁部１３ａ・１３ｂのたわみを検出することができ、これに基づいて、力センサ４に対して作用している力の大きさを検出することができる。なお、ピエゾ抵抗素子は、ボロンなどのイオン打ち込みによるシリコンへの不純物拡散によって形成することができる。
【００７８】
また、ピエゾ抵抗素子が備えられる梁部１３ａ・１３ｂにおけるＡ、Ｂの位置は、梁部１３ａ・１３ｂがたわむ際に、比較的大きな変形が生じる位置となっている。すなわち、ダイアフラム部１１が下方向に移動する場合には、Ａの位置は引っ張り歪みが大きくなる位置となり、Ｂの位置は圧縮歪みが大きくなる位置となる。また、これにより、Ａの位置で検出される歪みと、Ｂの位置で検出される歪みとでは、その符号が異なることになる。上記のように引っ張り歪が大きい個所Ａと、圧縮歪が大きい個所Ｂの値両方を用いて検出すれば、より感度良く検出することができる。例えば両方の出力差を出力信号にしたり、Ａ・Ｂの出力からブリッジ回路を作成して検出すれば、微小信号でもより感度良く検出することができる。
なお、上記の例では、梁部１３ａ・１３ｂのたわみを検出する構成となっているが、これに限定されるものではなく、例えば梁部１３ｃ・１３ｄのたわみを検出する構成であってもよい。さらに、梁部１３ａ・１３ｂ・１３ｃ・１３ｄ全てにおいてたわみを検出する構成であってもよい。
【００７９】
図６（ｂ）に示す構成によれば、力を検出する構成として、梁部１３ａ・１３ｂにピエゾ抵抗素子を設ける構成としている。このような構成は、図６（ａ）に示す構成と比較して、電極３２を作成する必要がない分だけ構造が簡素となり、製造コストを低減することができるという効果がある。
【００８０】
以上のように、力センサ４は、パネルに微小な力が作用する場合は、ダイアフラム部１１の薄膜１６ａの変位による静電容量の変化にて力を検出できる。一方、パネルに大きな力が作用する場合は、ダイアフラム部１１の変位による静電容量の変化を検出することによって、または梁部１３ａ・１３ｂに備えられるピエゾ抵抗素子によって力を検出することができる。ここで、パネルに作用する大きな力を検出する場合、大きな力の作用によって薄膜１６ａが破壊されるおそれがあるが、上記の構成によれば、所定以上の力が加わると、薄膜１６ａがダイアフラム部基板１５に密着することになるので、上記のような破壊の発生を防止することが可能となっている。
【００８１】
（Ｘ、Ｙ方向の力の検出方法）
上記において示した構成では、パネルに作用するＺ方向すなわち押付力のみに関するセンシング方法を説明した。以下では、パネルに作用するＸ、Ｙ方向の力を検出する方法について図１を参照して説明する。
【００８２】
Ｘ、Ｙ方向の力は、梁部１３ａ・１３ｂのＹ方向へのたわみ、および梁部１３ｃ・１３ｄのＸ方向へのたわみからそれぞれ独立して検出する。すなわち、梁部１３ａ・１３ｂは、力センサ４にＹ方向の力が作用するとＹ方向へたわむことができる。一方、梁部１３ｃ・１３ｄは、力センサ４にＸ方向の力が作用するとＸ方向へたわむことができる。
【００８３】
各梁部１３ａ・１３ｂ・１３ｃ・１３ｄのたわみ量は、上記で示した押付力の検出方法と同様に、静電容量の変化を検出することによって検出することが可能である。すなわち、梁部１３ａ・１３ｂのそれぞれにおけるＹ方向側面の一方に電極（図示せず）を設けるとともに、電極を設けた梁部１３ａ・１３ｂにおける側面に対向する固定枠部材１７ｃまたは１７ｄに誘電部分としての電極（図示せず）を設けることによってコンデンサを形成する。
【００８４】
そして、Ｙ方向に力が作用し、梁部１３ａ・１３ｂがＹ方向にたわむと、梁部１３ａ・１３ｂに備えられた電極と、これに対向する固定枠部材１７ｃまたは１７ｄの電極との間隔が変位し、結果としてコンデンサの静電容量が変位する。したがって、コンデンサの静電容量の変位を検出すれば、梁部１３ａ・１３ｂそれぞれのたわみ量を検出することができる。
【００８５】
Ｘ方向の力の検出に関してもＹ方向の力の検出と同様に行うことができる。つまり、梁部１３ｃ・１３ｄのそれぞれにおけるＸ方向側面の一方に電極（図示せず）を設けるとともに、電極を設けた梁部１３ｃ・１３ｄにおける側面に対向する内部枠部材２５ａまたは２５ｂに誘電部分としての電極（図示せず）を設けることによってコンデンサを形成する。
【００８６】
そして、Ｘ方向に力が作用し、梁部１３ｃ・１３ｄがＸ方向にたわむと、梁部１３ｃ・１３ｄに備えられた電極と、これに対向する内部枠部材２５ａまたは２５ｂの電極との間隔が変位し、結果としてコンデンサの静電容量が変位する。したがって、コンデンサの静電容量の変位を検出すれば、梁部１３ｃ・１３ｄそれぞれのたわみ量を検出することができる。
【００８７】
また、ピエゾ抵抗素子を各梁部１３ａ・１３ｂ・１３ｃ・１３ｄに形成し、各梁部１３ａ・１３ｂ・１３ｃ・１３ｄのひずみからＸまたはＹ方向の力を検出する構成とすることもできる。すなわちＹ方向の力による梁部１３ａ・１３ｂのたわみを検出できるように、梁部１３ａ・１３ｂにピエゾ抵抗素子を設ける。詳しく説明すると、梁部１３ａ・１３ｂのＹ方向側面において、固定枠部材１７ａ・１７ｂとの接続部に近い位置Ａと、内部枠部材２５ａ・２５ｂとの接続部に近い位置Ｂとに、ピエゾ抵抗素子を設ける。これにより、図６（ｂ）を参照しながら説明した方法と同様にして、Ｙ方向の力を検出することができる。
【００８８】
また、同様にして、Ｘ方向の力による梁部１３ｃ・１３ｄのたわみを検出できるように、梁部１３ｃ・１３ｄにピエゾ抵抗素子を設ける。詳しく説明すると、梁部１３ｃ・１３ｄのＹ方向側面において、固定枠部材１７ｃ・１７ｄとの接続部に近い位置Ａと、内部枠部材２５ｃ・２５ｄとの接続部に近い位置Ｂとに、ピエゾ抵抗素子を設ける。これにより、図６（ｂ）を参照しながら説明した方法と同様にして、Ｘ方向の力を検出することができる。
【００８９】
なお、力センサ４は、前記したようにジンバルバネ構造となっているので梁部１３ａ・１３ｂと梁部１３ｃ・１３ｄとは、互いに独立して各方向の力を検出することができる。すなわち、ダイアフラム部１１を支持する梁部１３ａ・１３ｂ・１３ｃ・１３ｄは、Ｘ方向およびＹ方向の軸まわりの力に対して自由性をもたせるように構成されているため、パネル３に対するＸ方向およびＹ方向の力を梁部１３ａ・１３ｂと梁部１３ｃ・１３ｄとによって独立して検出することができる。
【００９０】
以上のような構成の力センサ４によれば、微少な力に関しては、薄膜１６ａの変位を検出することによって計測することができ、比較的大きな力に関しては、ダイアフラム部１１の変位を検出することによって計測することができる。よって、例えばパネル３に対して指やタッチペンなどによって行われる入力を検知することができるとともに、もっと弱い力による各種入力をも検知することが可能となる。
【００９１】
また、力センサ４は、パネル３の面に垂直な方向に作用する力とパネル３の面に水平な方向に作用する力とをそれぞれ独立に検出することができるので、指やタッチペンによる押付力のみならず、パネル３に対して作用するさまざまな物理量を検出できることとなる。すなわち、様々な物理量を入力とする多機能パネルセンサを提供することができる。
【００９２】
（パネルセンサによる計測対象例）
上記で説明したような力センサ４によれば、パネル３および力センサ４…からなるパネルセンサのみによって、指やタッチペンによる押付力以外にも、パネルに作用する微小な力や複数方向の力を測定が可能となる。よって、タッチ入力以外のさまざまな応用を行うことが可能である。以下において、押付力以外のパネルに作用する力として、加速度や傾斜による慣性力を検知する方法について説明する。
【００９３】
図７（ａ）および図７（ｂ）は、慣性力がパネル３に対して作用する様子を示している。図７（ａ）は加速度がパネル３に作用する場合を示し、パネル３に加速度αが作用しているものとする。また、図７（ｂ）は、パネル３が角度βだけ傾いている場合を示す。
【００９４】
加速度αがパネル３に作用する場合は、パネルの重量をＭとするとパネル３に作用する慣性力はＭαと表せる。したがって、パネル３に働く慣性力すなわちＭαを力センサ４によって検出することによって、パネル３に作用する加速度を検出することができる。
【００９５】
パネル３が角度βだけ傾いている場合は、重力加速度をＧとするとパネル３に対して垂直をなす方向にＭＧｃｏｓβ、パネル３に対して平行をなす方向にＭＧｓｉｎβの力がそれぞれ作用する。したがって、パネル３に対して垂直方向、平行方向それぞれの方向に作用する慣性力を力センサ４によって検出すれば傾斜角βを求めることができる。
【００９６】
しかしながら、人間の指による押付力と傾斜による慣性力とを比較すると、両者には作用する力の大きさに大きな相違がある。例えば、人間の指による押付力を検出するためには、検出できる力の大きさの範囲として数ｇ〜数百ｇ程度が必要となる。したがって、力センサ４の検出分解能は、要求されるパネル入力座標の特定分解能によって異なるが、少なくとも０．１ｇ程度は必要とされる。
【００９７】
一方、加速度や傾斜角を検出するにために要求される検出可能な力の大きさの範囲は、実質的にはパネルの重さによって異なる。例えば、パネル３の重量が約３ｇである場合において傾斜角を求める際は、センサ４の１つあたりにかかる力の大きさは±０．７５ｇ程度となる。したがって、センサ４は、少なくともこの大きさの力を検出できる必要がある。さらに、この場合において、パネル３にかかる加速度に関して３Ｇ程度の重力加速度まで力センサ４によって検出できるようにするためには、各力センサ４が検出可能とする力の大きさの範囲は、少なくとも約２．３ｇ程度まで必要となる。
【００９８】
また、力センサ４の検出分解能は、要求される角度に対する力の検出分解能や要求される加速度に対する力の分解能によって異なる。例えば傾斜角０．１°を検出する必要があるならば、力センサ４の検出能として１０^−３ｇ程度の力を検出できる程度の能力が必要となる。
【００９９】
一方、図１において示した本発明の力センサ４は、梁部１３ａ・１３ｂ・１３ｃ・１３ｄそれぞれのＺ方向の変位から大きな力である押付力を検出し、梁部１３ａ・１３ｂのＸ方向の変位と梁部１３ｃ・１３ｄのＹ方向の変位とから慣性力のＸ方向およびＹ方向の力を検出できる構成である。しかしながら、この場合、慣性力と押付力との差が大きいので、梁部１３ａ・１３ｂのＹ方向変位および梁部１３ｃ・１３ｄのＸ方向変位の感度と、梁部１３ａ・１３ｂ・１３ｃ・１３ｄのＺ方向変位の感度とに大きな違いを持たさなければならない。
【０１００】
そのためには、梁部１３ａ・１３ｂ・１３ｃ・１３ｄの断面形状において、Ｚ方向の高さに比べて、Ｘ方向またはＹ方向の幅を小さく設計することによって、感度の差を生じさせることができる。これにより、Ｚ方向の変位で押付力のような大きな力を検出することができるとともに、Ｘ方向またはＹ方向の変位によって、Ｘ方向またはＹ方向に作用する慣性力のような微小な力を検出することができる。このような力センサ４を構成する場合、梁部１３ａ・１３ｂ・１３ｃ・１３ｄの断面形状を、アスペクト比がより大きくなるようにする必要がある。しかしながら、アスペクト比の大きな３次元構造物を半導体製造プロセスで作成するのは非常に難しいので、力センサ４の作製が困難になるという問題がある。そこで、以下においてこの問題を克服できる別の力センサ４の構成例について説明する。
【０１０１】
（力センサの別の構成例）
図８、図９（ａ）、および図９（ｂ）を参照にして、慣性力を検出できる他の力センサ４の構成について説明する。なお、図８は、力センサ４の構成を示しており、図９（ａ）および図９（ｂ）は、Ｚ方向とＸ方向とに力が作用した場合における力センサ４における薄膜１６ａの変位の様子をそれぞれ示す。
【０１０２】
図８に示す力センサ４は、図４に示す力センサ４と比較して、ダイアフラム部１１における薄膜部材１６の形状が異なっている。図８に示すように、薄膜部材１６は、薄膜支持部１６ｂ、第１薄膜１６ａ１、第２薄膜１６ａ２、および第３薄膜１６ａ３を備えた構成となっている。なお、図示はされていないが、さらに第４薄膜１６ａ４および第５薄膜１６ａ５も備えられている。第２薄膜１６ａ２、第３薄膜１６ａ３、第４薄膜１６ａ４および第５薄膜１６ａ５によって４角形状の側壁が形成され、第１薄膜１６ａ１によって底面が形成されており、これにより、下方向に凹んだ形状の薄膜構造が形成されている。
【０１０３】
また、図８に示すように、第２薄膜１６ａ２と薄膜支持部１６ｂとの接続部となる点、第２薄膜１６ａ２と第１薄膜１６ａ１との接続部となる点、および第３薄膜１６ａ３と第１薄膜１６ａ１との接続部となる点、および第３薄膜１６ａ３と薄膜支持部１６ｂとの接続部となる点に、ピエゾ抵抗素子Ｃ１・Ｃ２・Ｃ３・Ｃ４がそれぞれ設けられている。なお、図示はしていないが、第４薄膜１６ａ４と薄膜支持部１６ｂとの接続部となる点、第５薄膜１６ａ５と薄膜支持部１６ｂとの接続部となる点、第４薄膜１６ａ４と第１薄膜１６ａ１との接続部となる点、および第５薄膜１６ａ５と第１薄膜１６ａ１との接続部となる点にもピエゾ抵抗素子Ｃ５、Ｃ６、Ｃ７、Ｃ８がそれぞれ設けられている。これらのピエゾ抵抗素子Ｃ１〜Ｃ８によって、Ｘ方向、Ｙ方向、Ｚ方向の３方向に働く微小な力をダイアフラム部１１の薄膜構造のみによって検出することができる。この検出方法の詳細を以下に図９（ａ）および図９（ｂ）を参照しながら説明する。
【０１０４】
図９（ａ）は、Ｚ方向の力、すなわち押付力としてＦｚが作用する場合の薄膜構造の変位を示している。力Ｆｚが作用する場合、第１薄膜１６ａ１と、これに対向するダイアフラム部基板１５との間隔が短くなる。したがって、この第１薄膜１６ａ１とダイアフラム部基板１５との間の変位を、第１薄膜１６ａ１に備えられるピエゾ抵抗素子Ｃ２・Ｃ３によって検出することで、押付力（Ｚ方向の力）を検出することができる。
【０１０５】
一方、図９（ｂ）は、Ｘ方向に力Ｆｘが作用する場合の薄膜構造の変位を示している。なお、Ｙ方向に力が働くときの様子はＸ方向と同等なので省略する。Ｘ方向に力Ｆｘが作用する場合、第２薄膜１６ａ２、ならびに第３薄膜１６ａ３が力Ｆｘが作用する方向に引っ張られて変位する。したがって、ピエゾ抵抗素子Ｃ１・Ｃ２・Ｃ３・Ｃ４の位置に生じるひずみの大きさや符号を検出してやれば、Ｆｘの力の方向と大きさを知ることができる。例えばピエゾ抵抗素子Ｃ１、Ｃ３は引っ張り歪が作用し、ピエゾ抵抗素子Ｃ２、Ｃ４は圧縮歪が作用することからそれらの差をＦｘの出力とすることにより、その大きさと方向を知ることができる。
【０１０６】
上記の構成では、ピエゾ抵抗素子Ｃ１・Ｃ２・Ｃ３・Ｃ４によってＸ方向、Ｙ方向、およびＺ方向の３軸方向を全て検出するように構成されている。しかしながら、図５に示した構成と同様にしてＺ軸方向の力、すなわち押付力を検出する構成としてもよい。すなわち、ダイアフラム部基板１５の上面および第１薄膜１６ａ１に電極を設けることによってコンデンサを形成し、このコンデンサの静電容量を検出することによって、Ｚ軸方向の力を検出するようにしてもよい。そして、Ｘ方向、Ｙ方向の力は、薄膜構造に備えられるピエゾ抵抗素子Ｃ１・Ｃ２・Ｃ３・Ｃ４によって検出されるように構成してもよい。
【０１０７】
上記の構成によれば、Ｘ、Ｙ、Ｚの３軸方向に対する力の検出をダイアフラム部１１によって行うことができる。つまり、加速度や重力などの慣性力を一つの検出部で検出することが可能となる。しかしながら、パネル３に作用する、人の指による押付力の大きさと、加速度・傾斜等による慣性力の大きさとが大きく異なる場合には、上記の構成のように一つの検出部で両方を測定するようにすると、小さい力である慣性力の検出感度が押付力の検出感度よりも悪くなるという問題がある。また、広範囲の力の大きさに対して、力センサ４の検出出力を線形に保つことは非常に難しいために、非常に高精度な検出能力を有する力センサが要求される。
【０１０８】
したがって、この問題を解決するために、図３に示した構成と同様に、大きな押付力に関しては、第１検出部として、ダイアフラム部１１の変位を検出することによって力の計測を行い、小さな力である慣性力などは、第２検出部として、薄膜構造に備えられるピエゾ抵抗素子によって力の計測を行うように構成することが好ましい。このように２つの検出部に分けて大きな押付力と小さな慣性力とを検出するように構成することによって、慣性力に対する検出感度が劣化する問題を解消することができ、また、各検出部の線形性を広範囲において保つ構成とする必要がなくなる。
【０１０９】
なお、上記で示した力センサ４の構成において、第１検出部において検出する力の方向および力の大きさの範囲、ならびに、第２検出部において検出する力の方向および力の大きさの範囲は、タッチパネルが搭載される機器の使用目的、使用環境に応じて任意に設定してやればよい。
【０１１０】
また、上記にて示した力センサの構成において、加速度・傾斜によってパネル３に作用する慣性力を検出する例をあげたが、検出される力は加速度、パネルの傾斜による慣性力に限定されるものではない。例えば、加速度やパネルの傾斜による慣性力の代わりに、音声によるパネル３の振動を検出できるように構成すれば、マイクロホンとしてパネル３を用いることができる。つまり、音声の振動によってパネル３に働く力の大きさは、指などによる押出力の力に比べて非常に小さいので、音声による振動を、微少な力を検出するための第２検出部によって検出するように構成すればよい。さらには、温度によるパネル３の収縮によるパネル３の変位を各３軸方向で検出できるように力センサ４を構成すれば、パネル３の収縮による力の変位と温度との関係からパネルセンサ２を温度計としても機能させることができる。
【０１１１】
（力センサのさらに別の構成例）
上記したパネルセンサ２では、パネル３に対して、図３などに示す構成の力センサを設けることによって力の検出を行っている。これに対して、本構成例では、図１０に示すように、上記のパネル３に対応するパネル２１に対して、力検出用センサとして圧電素子２２ａ・２２ｂ・２３ａ・２３ｂ・２４ａ・２４ｂを各方向すなわち、Ｘ、Ｙ、Ｚ方向に作用する力が検出できるように設けている。なお、各圧電素子２２ａ・２２ｂ・２３ａ・２３ｂ・２４ａ・２４ｂは、センサ取り付け基板（図示せず）にて固定されている。そして、圧電素子２２ａ・２３ａ・２４ａは、指などによる押付力のような大きな力を検出し、圧電素子２２ｂ・２３ｂ・２４ｂは例えば慣性力などの微小な力を検出するように構成されている。
【０１１２】
圧電素子による力検出に関しては、従来から良く知られている技術であるため、半導体プロセスを利用して作成された上記の力センサ４よりも複雑な構成をとる必要がなく、また市販品を用いることが可能であるとともに、半導体プロセスを利用して作成した力センサよりもサイズが比較的大きく取り扱いが容易になることから、圧電素子２２ａ・２２ｂ・２３ａ・２３ｂ・２４ａ・２４ｂのパネル２１への取り付けもまた容易となる。しかしながら、図１０に示す構成では、各圧電素子２２ａ・２２ｂ・２３ａ・２３ｂ・２４ａ・２４ｂによって検出される力は、他の方向からの力の影響、すなわちクロストークを大きく含んでいることになる。したがって、このクロストークを補正する回路を備える必要がある。また、各方向、すなわちＸ、Ｙ、Ｚの３軸方向に対して、大きな力と微小な力とを検出するための各圧電素子を別々に用意しなければならないなどの問題もある。
【０１１３】
（パネルセンサの適用例）
本実施形態に係るパネルセンサ２は、Ｘ方向、Ｙ方向、およびＺ方向の３方向に対する力を検出することができるとともに、指などによる押付力のような大きな力と、慣性力などの小さな力との両方を精度良く検出することが可能となっている。したがって、このパネルセンサ２は、好ましくは、例えば携帯やＰＤＡなどの情報機器に搭載することによって、タッチパネル機能とともに、加速度検出機能、傾斜検出機能、音響検出機能、および温度検出機能などを有する情報機器を提供することが可能となる。
【０１１４】
例えば、加速度検出機能や傾斜検出機能を利用することによって、情報機器に万歩計（登録商標）機能を搭載することもできる。さらには加速度の大きさを一定時間記録すれば、その時間内の運動量を測定することができるので、運動量管理にも使用することができる。
【０１１５】
また、ユーザがパネル３に指で接触する際に、叩く動作、なでる動作、引っ掻く動作などを行った場合、パネル３に加わる力の方向や大きさがそれぞれ異なることになるので、パネルセンサ２は、これらを識別することが可能である。よって、ユーザが接触動作の種類を意識的に切替えることによって、多様な入力を行うことが可能な情報機器を提供することも可能となる。すなわち、情報機器への入力方法が、現在一般的に想定される例えば指やペンなどによる押付力のみならず、パネルに作用する多様な力を入力とすることが可能となる。
【０１１６】
また、音声信号をパネル３の振動から拾うことができれば、ユーザは、画面を見ながら画面に話し掛けることで音声入力を行うことが可能となる。すなわち、パネルセンサ２を情報機器に備えることによって、マイクなどの音声入力手段を別途情報機器に搭載する必要をなくすことができる。また、このような構成とした場合、例えば画面上に映し出されている地図にタッチパネル機能を使って画面をなぞることによって、通話の相手と会話しながら道順を示し、通話の相手にリアルタイムで道順を教えるなどの用途が生まれてくる。
【０１１７】
さらに、本実施形態に係るパネルセンサ２において、上記の説明では、外部からパネル３に対して力が入力される場合に関して述べてきたが、力センサ４を能動的に使用すればさらに用途の範囲を広げることができる。例えば機器から発信される音声の電気信号を本発明によるセンサに入力して能動的にセンサを駆動する。その駆動がパネルに伝達して、パネルが音声信号に比例して振動する。その振動が空気振動に変換されて、パネルにスピーカ機能を有することができる。したがって、タッチパネルにスピーカとの機能を備えることも可能となる。
【０１１８】
以上のように、本発明に係るパネルセンサは、パネルとパネルに作用する力を検出する複数の力センサを有したパネルセンサであって、前記複数の力センサは、パネル面に略垂直な方向に作用する力とパネル面に略水平な方向に作用する力をそれぞれ独立して検出可能な構成となっている。
【０１１９】
また、前記パネルセンサは、パネル上に作用した力の位置ないしその大きさを特定するタッチ入力機能と、パネルに作用する前記タッチ入力以外の入力を検出するようになっていてもよい。
【０１２０】
また、前記パネルセンサにおいて、前記タッチ入力以外の入力は慣性力であってもよい。さらに、前記タッチ入力以外の入力は音響振動であってもよい。さらに、前記タッチ入力以外の入力は温度であってもよい。
【０１２１】
また、前記パネルセンサにおいて、前記パネルへの入力を検出する力センサはパネル周囲に配置し、前記力センサは前記パネルへの入力に対しパネルへかかる力を検出する第１の検出部と、前記第１の検出部が検出するパネルにかかる力より小さい力を検出する第２の検出部を備えていてもよい。
【０１２２】
また、前記力センサの第１検出部と第２検出部とはパネルに作用する複数方向の力を検出してもよい。
【０１２３】
また、前記パネルセンサは、パネル周囲に配置した前記複数の力センサの第１検出部ないし第２検出部の出力から、前記パネル面の略一点に加えられた力のパネル上での位置を特定してもよい。
【０１２４】
また、前記パネルセンサにおいて、前記力センサはシリコンから作製されていてもよい。
【０１２５】
また、前記シリコンから作製される前記力センサの構造は、ダイアフラムが梁によって支持された構造であってもよい。
【０１２６】
また、前記力センサのセンシング手段は力による構造の変位を静電容量変化で検出し、その変化量から前記力センサにかかる力を検出してもよい。
【０１２７】
また、前記力センサのセンシング手段は力による構造の変位を構造のひずみから検出し、そのひずみ量から力センサにかかる力を検出してもよい。
【０１２８】
また、前記力センサのダイアフラムは略中央部が略周辺部に対し凹部であってもよい。
【０１２９】
また、前記力センサは、複数の圧電素子で構成されていてもよい。
【０１３０】
また、パネルと、パネル面に略垂直な方向に作用する力とパネル面に略水平な方向に作用する力をそれぞれ独立して検出する力センサとを有したパネルセンサを搭載している情報機器を構成してもよい。
【０１３１】
【発明の効果】
以上のように、本発明に係るパネルセンサは、パネルに対して作用する力を検出するパネルセンサであって、上記パネルに対して作用する力を検出する力検出手段を備え、上記力検出手段が、上記パネルに対して作用する力を複数方向成分に分離した分力をそれぞれ検出する複数の検出部を備えている構成である。
【０１３２】
これにより、例えばパネルの面に対して垂直な方向に対する力のみならず、その他の方向、例えばパネルの面に対して水平な方向に対する力も検出することが可能となる。すなわち、パネルに対して作用する様々な方向の力を検出することができるので、パネルセンサを様々な用途で用いることが可能となるという効果を奏する。
【０１３３】
また、本発明に係るパネルセンサは、パネルに対して作用する力を検出するパネルセンサであって、上記パネルに対して作用する力を検出する力検出手段を備え、上記力検出手段が、上記パネルに対して作用する力の大きさを複数の範囲に分割した各範囲に対応した力を検出する複数の検出部を備えている構成である。
【０１３４】
これにより、パネルに対して作用する多様な種類の大きさの力を精度良く検出することが可能となるので、パネルセンサを様々な用途で用いることが可能となるという効果を奏する。
【０１３５】
また、本発明に係るパネルセンサは、上記力検出手段が、さらに、上記パネルに対して作用する力の大きさを複数の範囲に分割した各範囲に対応した力を検出する複数の検出部を備えている構成としてもよい。
【０１３６】
これにより、上記の構成による効果に加えて、パネルに対して作用する多様な種類の大きさの力を精度良く検出することが可能となるので、様々な方向の力を検出することが可能であることとの相乗効果によって、パネルセンサをさらに様々な用途で用いることが可能となるという効果を奏する。
【０１３７】
また、本発明に係るパネルセンサは、上記力検出手段が、上記パネルの平面位置における３つ以上の箇所に対応して配置されている構成としてもよい。
【０１３８】
これにより、上記の構成による効果に加えて、各力検出手段によって検出された力に基づいて、パネルに対して作用した力の作用点の平面位置を特定することが可能となるので、パネルセンサを、力を加えた位置によって入力動作が行われるタッチセンサとして機能させることが可能となるという効果を奏する。
【０１３９】
また、本発明に係るパネルセンサは、上記力検出手段が、上記パネルに対して作用する力を薄膜の変位によって検出する検出部を備えている構成としてもよい。
【０１４０】
これにより、上記の構成による効果に加えて、薄膜は、微少な力に対しても敏感に反応して変位するものであるので、微少な力を精度良く検知することが可能となるという効果を奏する。
【０１４１】
また、本発明に係るパネルセンサは、上記薄膜が、上記パネルに対して作用する力の方向に応じて複数の方向に変位するとともに、上記力検出手段が、該薄膜の変位の複数方向の成分に対応した複数の検出部を備えている構成としてもよい。
【０１４２】
これにより、上記の構成による効果に加えて、パネルに対する微少な力がどの方向でどれだけの大きさであるのかを検出することが可能となるという効果を奏する。
【０１４３】
また、本発明に係るパネルセンサは、上記検出部が、上記薄膜に設けられた電極と、該薄膜の変位に応じて移動しない箇所に設けられた電極とによって構成されるコンデンサの静電容量の変化を検出することによって、上記薄膜の変位を検出する構成としてもよい。
【０１４４】
これにより、上記の構成による効果に加えて、薄膜の変位の微少な変化も的確に検知することができる。すなわち、パネルに作用する微少な力を精密に測定することが可能となるという効果を奏する。
【０１４５】
また、本発明に係るパネルセンサは、上記検出部が、上記薄膜に生じる歪みを検出する歪み検出手段によって、上記薄膜の変位を検出する構成としてもよい。
【０１４６】
これにより、上記の構成による効果に加えて、薄膜の変位の微少な変化も的確に検知することができる。すなわち、パネルに作用する微少な力を精密に測定することが可能となるという効果を奏する。
【０１４７】
また、本発明に係るパネルセンサは、上記力検出手段が、上記パネルに対して作用する力に応じて変位する変位部と、上記変位部の変位に応じて移動しない固定部と、上記変位部と上記固定部とを固定的に接続する弾性部材と、上記変位部の変位を検出する検出部とを備えている構成としてもよい。
【０１４８】
これにより、上記の構成による効果に加えて、弾性部材の弾性の大きさを適宜設定することによって、力の大きさの検出範囲を適宜設定することができるという効果を奏する。
【０１４９】
また、本発明に係るパネルセンサは、上記弾性部材が、一端が上記変位部に固定的に接続され、他端が上記固定部に固定的に接続された梁部である構成としてもよい。
【０１５０】
これにより、上記の構成による効果に加えて、パネルに対して作用する力の特定の方向の分力を検出することが可能となるという効果を奏する。
【０１５１】
また、本発明に係るパネルセンサは、上記検出部が、上記変位部に設けられた電極と、該変位部の変位に応じて移動しない箇所に設けられた電極とによって構成されるコンデンサの静電容量の変化を検出することによって、上記変位部の変位を検出する構成としてもよい。
【０１５２】
これにより、上記の構成による効果に加えて、変位部の変位の微少な変化も的確に検知することができる。すなわち、パネルに作用する力を精密に測定することが可能となるという効果を奏する。
【０１５３】
また、本発明に係るパネルセンサは、上記検出部が、上記梁部に生じる歪みを検出する歪み検出手段によって、上記変位部の変位を検出する構成としてもよい。
【０１５４】
これにより、上記の構成による効果に加えて、変位部の変位の微少な変化も的確に検知することができる。すなわち、パネルに作用する力を精密に測定することが可能となるという効果を奏する。
【０１５５】
また、本発明に係るパネルセンサは、上記力検出手段が、半導体製造プロセスによって作製される構成としてもよい。
【０１５６】
これにより、上記の構成による効果に加えて、１つのプロセスで、例えばシリコンウェハ上に力検出手段の各構成要素、検知を行うためのセンシング部材、および、センシング部材からの出力信号を処理する信号処理回路等を作製することが可能となるという効果を奏する。
【０１５７】
また、本発明に係るパネルセンサは、上記検出部が、圧電素子によって構成されている構成としてもよい。
【０１５８】
これにより、上記の構成による効果に加えて、力検出手段を容易に構成することができるとともに、圧電素子のパネルへの取り付けも容易に行うことができるという効果を奏する。
【０１５９】
また、本発明に係る情報機器は、情報の表示を行う表示パネルと、上記本発明に係るパネルセンサとを備えている構成である。
【０１６０】
これにより、例えば携帯用途の情報機器に対しても、装置の大型化やコストの上昇などを招くことなく、多様な機能を有する構成とすることが可能となるという効果を奏する。
【図面の簡単な説明】
【図１】本発明の一実施形態に係るパネルセンサが備える力センサの概略構成を示す斜視図である。
【図２】上記パネルセンサの外観を示す斜視図である。
【図３】上記パネルセンサが備えるパネルに対して作用した力の位置を特定する方法を説明する図である。
【図４】図１に示す力センサの断面図である。
【図５】同図（ａ）および同図（ｂ）は、Ｚ方向に力が作用した場合の力センサの構成例を示す断面図である。
【図６】同図（ａ）および同図（ｂ）は、Ｚ方向に力が作用した場合の力センサの別の構成例を示す断面図である。
【図７】同図（ａ）は、パネルセンサに加速度が加わった場合の状態を示す図であり、同図（ｂ）は、パネルセンサが傾斜した場合の状態を示す図である。
【図８】力センサの別の構成を示す断面図である。
【図９】同図（ａ）は、Ｚ方向に力が作用した場合のダイアフラム部の構成を示す断面図であり、同図（ｂ）は、Ｘ方向に力が作用した場合のダイアフラム部の構成を示す断面図である。
【図１０】力検出用センサとして圧電素子を用いたパネルセンサの概略構成を示す部分斜視図である。
【符号の説明】
２ パネルセンサ
３ パネル
４ 力センサ（力検出手段）
５ 表示パネル
１１ ダイアフラム部（変位部）
１３ａ・１３ｂ・１３ｃ・１３ｄ 梁部
１４ パネル支持部
１５ ダイアフラム部基板
１６ 薄膜部材
１６ａ 薄膜
１６ａ１・１６ａ２・１６ａ３ 第１ないし第３薄膜
１７ 固定枠（固定部）
１７ａ・１７ｂ・１７ｃ・１７ｄ 固定枠部材
２２ａ・２２ｂ・２３ａ・２３ｂ・２４ａ・２４ｂ 圧電素子
２５ 内部枠
２５ａ・２５ｂ・２５ｃ・２５ｄ 内部枠部材
３１・３２ 電極[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a panel sensor used as a so-called touch panel or the like that performs input by bringing a finger or the like into contact with a display screen, for example.
[0002]
[Prior art]
In recent years, mobile devices such as mobile phones and PDAs (personal digital assistants) are becoming daily necessities, and such mobile devices are designed to be highly functional and multifunctional by being equipped with various devices. It has become to. As an example of high functionality, there is also provided a mobile device equipped with a so-called touch panel that performs input by bringing a finger, a touch pen, or the like into contact with a panel.
[0003]
Conventionally, in a touch panel, as a sensing method for detecting contact with a finger or the like, for example, when a finger is placed on a specific area of a panel, a circuit is completed, and a specific area is identified by its circuit characteristics, or surface acoustic waves ( SAW) is propagated over the panel area, and the area where the finger touches the panel is identified from the wave pattern disturbance when the finger touches. Furthermore, there are methods that use electromagnetic induction, and methods that detect the blockage of parallel rays.
[0004]
However, these sensing methods have problems that the circuit configuration is complicated, the application of the sensor depends on the characteristics of the panel, and the cost of the sensor is high. Thus, a force detection method using rigid body dynamics has been proposed as another method for sensing the touch panel (see, for example, Patent Document 1). This method includes a sensor that detects a component force of a force applied to a panel in a member that supports the panel disposed on the substrate. And the area | region where the finger | toe contacted the panel is specified by comparing the output value detected from each sensor. This sensing method is superior in that it has a simple structure and does not depend on the characteristics of the panel.
[0005]
[Patent Document 1]
JP 61-292732 A (published on December 23, 1986)
[0006]
[Problems to be solved by the invention]
While mobile devices have come to be equipped with various devices to achieve higher functionality and more functionality, the shape of the mobile device itself has been reduced in size so that people can easily carry it around. Yes. Therefore, the space where a new device can be mounted in the mobile device is very limited.
[0007]
On the other hand, when a touch panel is mounted on a mobile device, a wide area is required in the mobile device in order to realize touch input. That is, the touch panel has a problem that it occupies a wide area in a mobile device even though it has only one function, that is, a touch input function. Furthermore, when the touch panel sensing method or the sensor configuration is complicated, complicated circuit design, calculation or configuration is required only for the touch input function, which increases the cost and prevents the mobile device from being downsized. There is a problem of becoming a factor.
[0008]
For example, the force sensing method in the touch panel disclosed in Patent Document 1 is excellent in that the structure of the sensing method is simple and does not depend on the panel characteristics. However, this sensing method is supposed that the sensor detects only the pressing force by the finger or the pen, and has a problem that the sensitivity is small for the minute force compared to the pressing force by the finger or the pen. Furthermore, since only a force in one axis direction perpendicular to the panel can be detected, and a force in three axes acting on the panel cannot be detected, functions other than the touch input function cannot be added to the panel. .
[0009]
The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a panel sensor having a function other than a touch input function, for example, and an information device including the same without adding a new configuration. It is to provide.
[0010]
[Means for Solving the Problems]
The panel sensor according to the present invention is a panel sensor for detecting a force acting on a panel, and includes a force detection means for detecting a force acting on the panel, and the force detection means is applied to the panel. A plurality of detectors for detecting component forces obtained by separating the forces acting on the components in a plurality of directions are provided.
[0011]
Conventionally, as described above, in a touch panel, for example, an input is detected by detecting a force in a direction perpendicular to the surface of the panel. On the other hand, in said structure, the force which acts with respect to a panel is detected as a component force of a multi-directional component by the some detection part with which a force detection means is provided. Thereby, for example, not only a force in a direction perpendicular to the surface of the panel but also a force in another direction, for example, a direction horizontal to the surface of the panel can be detected. That is, since the forces in various directions acting on the panel can be detected, the panel sensor can be used in various applications. Therefore, by mounting such a panel sensor on some device, various functions can be given to the device.
[0012]
The panel sensor according to the present invention is a panel sensor that detects a force acting on the panel, and includes a force detection unit that detects a force acting on the panel, and the force detection unit includes the above-described force detection unit. A plurality of detectors for detecting forces corresponding to the respective ranges obtained by dividing the magnitude of the force acting on the panel into a plurality of ranges are provided.
[0013]
According to said structure, the magnitude | size of the force which acts on a panel is divided | segmented into several ranges, and the magnitude | size of the force which acts on a panel is detected by the detection part corresponding to each of these ranges. It will be. As a result, various types of magnitudes of force acting on the panel can be accurately detected, and the panel sensor can be used in various applications. Therefore, by mounting such a panel sensor on some device, various functions can be given to the device.
[0014]
In the panel sensor according to the present invention, in the above configuration, the force detection unit further detects a force corresponding to each range obtained by dividing the magnitude of the force acting on the panel into a plurality of ranges. It is good also as a structure provided with the some detection part.
[0015]
According to said structure, the magnitude | size of the force which acts on a panel is divided | segmented into a some range, and the magnitude | size of the force which acts on a panel is detected by the detection part corresponding to this each range. become. As a result, it is possible to accurately detect various types of forces acting on the panel, so that a synergistic effect with the ability to detect forces in various directions is possible. The sensor can be used in various applications. Therefore, by mounting such a panel sensor on one device, it is possible to give various functions to the device.
[0016]
Moreover, the panel sensor which concerns on this invention is good also as a structure by which the said force detection means is arrange | positioned corresponding to three or more places in the planar position of the said panel in said structure.
[0017]
According to said structure, since the force detection means was provided corresponding to three or more places in the planar position of a panel, it acted on the panel based on the force detected by each force detection means It is possible to specify the plane position of the force application point. Therefore, the panel sensor can be made to function as a touch sensor that performs an input operation according to a position where a force is applied.
[0018]
Moreover, the panel sensor which concerns on this invention is good also as a structure provided with the detection part in which said force detection means detects the force which acts on the said panel by the displacement of a thin film in said structure.
[0019]
In the above configuration, the force acting on the panel due to the displacement of the thin film is detected. Since the thin film reacts and displaces sensitively even to a minute force, the above-described configuration makes it possible to detect a minute force with high accuracy.
[0020]
In the panel sensor according to the present invention, in the configuration described above, the thin film is displaced in a plurality of directions according to the direction of the force acting on the panel, and the force detection unit is configured to displace the thin film. It is good also as a structure provided with the some detection part corresponding to the component of multiple directions.
[0021]
According to the above configuration, the thin film can be displaced in a plurality of directions according to the direction of the force acting on the panel, and the displacement of the thin film can be detected for each component in a plurality of directions. It has become. As a result, it is possible to detect in what direction and how much the minute force on the panel is.
[0022]
In the panel sensor according to the present invention, in the configuration described above, the detection unit includes a capacitor provided with an electrode provided on the thin film and an electrode provided at a position where the detection unit does not move according to the displacement of the thin film It is good also as a structure which detects the displacement of the said thin film by detecting the change of the electrostatic capacitance.
[0023]
According to said structure, since the displacement of a thin film is detected by detecting the electrostatic capacitance of a capacitor | condenser, the slight change of the displacement of a thin film can also be detected exactly. That is, it is possible to accurately measure a minute force acting on the panel.
[0024]
Moreover, the panel sensor which concerns on this invention is good also as a structure in which the said detection part detects the displacement of the said thin film by the distortion detection means which detects the distortion which arises in the said thin film in said structure.
[0025]
According to the above configuration, since the displacement of the thin film is detected by the strain detecting means for detecting the strain generated in the thin film, a minute change in the displacement of the thin film can be accurately detected. That is, it is possible to accurately measure a minute force acting on the panel.
[0026]
In the panel sensor according to the present invention, in the configuration described above, the force detection means is displaced according to the force acting on the panel, and the fixed portion is not moved according to the displacement of the displacement portion. And an elastic member that fixedly connects the displacement part and the fixing part, and a detection part that detects the displacement of the displacement part.
[0027]
In the above configuration, the displacement portion is supported by a member having elasticity with respect to the fixed portion. Therefore, when a force acts on the panel, the displacement portion is displaced by elastic deformation of the elastic member. That is, by appropriately setting the magnitude of elasticity of the elastic member, the detection range of the magnitude of force can be set as appropriate.
[0028]
In the panel sensor according to the present invention, the elastic member is a beam portion in which one end is fixedly connected to the displacement portion and the other end is fixedly connected to the fixed portion. It is good.
[0029]
In the above configuration, the displacement portion and the fixed portion are connected by the beam portion. In general, the beam portion has little elastic deformation in the compression / extension direction, but some deformation in the bending direction, in other words, in the deflection direction occurs. That is, according to said structure, it becomes possible to detect the component force of the specific direction of the force which acts on a panel.
[0030]
In the panel sensor according to the present invention, the detection unit is configured by the electrode provided in the displacement unit and the electrode provided in a place where the detection unit does not move in accordance with the displacement of the displacement unit. The displacement of the displacement portion may be detected by detecting a change in the capacitance of the capacitor.
[0031]
According to said structure, since the displacement of the displacement part is detected by detecting the electrostatic capacitance of a capacitor | condenser, the slight change of the displacement of a displacement part can also be detected exactly. That is, the force acting on the panel can be accurately measured.
[0032]
The panel sensor according to the present invention may be configured such that, in the above-described configuration, the detection unit detects the displacement of the displacement unit by a strain detection unit that detects strain generated in the beam unit.
[0033]
According to the above configuration, since the displacement of the displacement portion is detected by the strain detection means that detects the strain generated in the beam portion, a minute change in the displacement of the displacement portion can be accurately detected. That is, the force acting on the panel can be accurately measured.
[0034]
The panel sensor according to the present invention may have a configuration in which the force detection means is manufactured by a semiconductor manufacturing process in the above configuration.
[0035]
According to the above configuration, since the force detection means is manufactured by the semiconductor manufacturing process, for example, each component of the force detection means on the silicon wafer, the sensing member for performing detection, and the sensing member in one process It is possible to produce a signal processing circuit or the like that processes the output signal from the.
[0036]
The panel sensor according to the present invention may be configured such that, in the above configuration, the detection unit is configured by a piezoelectric element.
[0037]
Since the force detection by the piezoelectric element is a well-known technique, the force detection means can be easily configured and the piezoelectric element can be easily attached to the panel. It can be carried out.
[0038]
Further, in the panel sensor according to the present invention, in the above-described configuration, the force detection unit is a pressing force acting on the panel, an inertial force acting on the panel, vibration due to sound of the panel, and The panel can be configured to detect at least one of deformation due to temperature change.
[0039]
The information device according to the present invention includes a display panel for displaying information and the panel sensor according to the present invention.
[0040]
According to said structure, it becomes possible to perform input operation by a touch sensing system by combining a display panel and a panel sensor. Further, as described above, the panel sensor can detect various types of forces, and thus can provide various functions to the information device. That is, for example, even for portable information equipment, it is possible to have a configuration having various functions without causing an increase in the size of the apparatus or an increase in cost.
[0041]
DETAILED DESCRIPTION OF THE INVENTION
An embodiment of the present invention will be described with reference to FIGS. 1 to 10 as follows.
[0042]
(Configuration of panel sensor)
FIG. 2 shows a schematic appearance of the panel sensor 2 according to the present embodiment. As shown in the figure, the panel sensor 2 includes a panel 3 and four force sensors (force detection means) 4. The panel 3 receives input operations by the user and other external inputs, and moves and vibrates by these inputs. In this embodiment, the panel 3 is comprised by the square-shaped plate-shaped member. The panel 3 is preferably made of a lightweight material, for example, a transparent plastic.
[0043]
The force sensors 4... Are sensors that detect a force applied by detecting movement and vibration of the panel 3. In the present embodiment, one force sensor 4 is provided at each of predetermined positions near four corners on one side of the quadrangular panel 3. The force acting on an arbitrary point of the panel 3 is detected by a plurality of force sensors 4 arranged at each corner of the panel 3, and based on this, the position where the force is applied to the panel 3 is specified. Is done. Details of the force sensor 4 will be described later.
[0044]
Further, as shown in FIG. 2, a display panel 5 is provided at a position facing the surface of the panel 3 on which the force sensors 4 are provided, with a predetermined gap from the panel 3. The display panel 5 performs various display operations. That is, since the panel 3 has translucency, the user can see the display screen on the display panel 5 through the panel 3. Although it is conceivable to use a liquid crystal display panel as the display panel 5, the present invention is not particularly limited to this, and for example, an organic EL (Electroluminescence) panel, a plasma panel, or the like may be used. 2, the force sensors 4... And the substrate for fixing the display panel 5 are omitted.
[0045]
(Configuration example of force sensor)
One configuration example of the force sensor 4 will be described below with reference to FIGS. 1 and 4. 1 is a perspective view of the force sensor 4, and FIG. 4 is a cross-sectional view taken along the plane AA 'of FIG. As shown in the figure, the force sensor 4 includes a diaphragm portion (displacement portion) 11, beam portions 13 a, 13 b, 13 c, and 13 d, a fixed frame (fixed portion) 17, and an inner frame 25. .
[0046]
The fixed frame 17 is a quadrangular frame member composed of four fixed frame members 17a, 17b, 17c and 17d. The fixed frame members 17a and 17b are arranged in parallel, and the fixed frame members 17c and 17d are arranged in parallel. The fixed frame 17 is fixedly disposed on a substrate (not shown). Here, the direction parallel to the longitudinal direction of the fixing members 17c and 17d is the X direction, the direction parallel to the longitudinal direction of the fixing members 17a and 17b is the Y direction, and the direction perpendicular to the X direction and the Y direction is the Z direction. To do.
[0047]
The inner frame 25 is disposed inside the fixed frame 17 and is a quadrangular frame member composed of four inner frame members 25a, 25b, 25c, and 25d. The inner frame members 25a and 25b are arranged in parallel with the fixed frame members 17a and 17b, and the inner frame members 25c and 25d are arranged in parallel with the fixed frame members 25c and 25d.
[0048]
The inner frame members 25a and 25b are connected to the fixed frame members 25a and 25b by beam portions 13a and 13b, respectively. Each of the beam portions 13a and 13b is a beam-shaped member having a predetermined cross section and having a predetermined elasticity. Fixed ends are connected to the outer surfaces of the center positions of the members 25a and 25b. On the other hand, the inner frame members 25c and 25d are arranged with their outer surfaces spaced apart from the inner surfaces of the fixed frame members 25c and 25d by a predetermined distance. That is, the inner frame 25 can be slightly moved only in the Y direction by the bending distortion of the beam portions 13a and 13b. The beam portions 13a and 13b are made of a material that causes a slight distortion in the bending direction due to elasticity, but hardly causes a distortion in the compression / tensile direction.
[0049]
The diaphragm portion 11 is disposed inside the inner frame 25, and the surfaces facing the inner frame members 25c and 25d are connected to the inner frame members 25c and 25d by the beam portions 13c and 13d, respectively. The beam portions 13c and 13d are beam-like members having a predetermined cross-section having a predetermined elasticity, and one end thereof is fixedly connected to the inner side surface at the center position of the inner frame members 25c and 25d, and the other end is a diaphragm portion. The fixed end is connected to the inner surface of 11. That is, the diaphragm portion 11 can be moved only in the X direction by the bending strain of the beam portions 13c and 13d. The beam portions 13c and 13d are made of a material that causes a slight distortion in the bending direction due to elasticity, but hardly causes a distortion in the compressive pulling direction.
[0050]
As described above, the force sensor 4 has a gimbal spring structure in which the beam portions 13a, 13b, 13c, and 13d are arranged in a nested structure. Accordingly, by detecting the deflection in the Y direction of the beam portions 13a and 13b, only the force acting in the Y direction on the diaphragm portion 11 can be detected independently, and the beam portions 13c and 13d By detecting the deflection in the X direction, only the force acting in the X direction on the diaphragm portion 11 can be detected independently. Further, by detecting the deflection in the Z direction of the beam portions 13a, 13b, 13c, and 13d, only the force acting in the Z direction on the diaphragm portion 11 can be detected independently. The details of the detection method of the force in each of the X direction, the Y direction, and the Z direction and the configuration for detection will be described later.
[0051]
As shown in FIG. 4, the diaphragm unit 11 includes a diaphragm unit substrate 15, a thin film member 16, and a panel support unit 14. The diaphragm portion substrate 15 is a substrate of the diaphragm portion 11, and the beam portions 13 c and 13 d are fixedly connected to the outer surface of the diaphragm portion substrate 15. A thin film member 16 is provided on the upper surface side of the diaphragm substrate 15.
[0052]
The thin film member 16 includes a thin film 16a and a thin film support portion 16b. The thin film 16a is composed of a stretchable thin film, and is supported in a state where the outer peripheral portion thereof is kept in tension by the thin film support portion 16b. The thin film support portion 16b is a member that supports the thin film 16a as described above, and is fixedly disposed on the upper surface of the diaphragm portion substrate 15. In addition, a gap is provided between the thin film 16a and the diaphragm portion substrate 15. The gap formed between the thin film 16a and the diaphragm portion substrate 15 is preferably sealed in order to avoid the thin film 16a and the diaphragm portion substrate 15 from being adsorbed by moisture. However, it is not always necessary to seal it depending on the usage environment of the device equipped with the touch panel.
[0053]
A panel support 14 is disposed on the upper surface of the thin film 16a. The panel 3 is disposed on the upper surface of the panel support portion 14, and the force applied to the panel 3 is transmitted to the thin film 16 a via the panel support portion 14. That is, by detecting the distance between the thin film 16a and the upper surface of the panel support portion 14, a minute force acting on the panel 3 in the Z direction can be detected.
[0054]
The force sensor 4 configured as described above can be formed by processing silicon using a semiconductor manufacturing process. In this case, since the microfabrication is possible by using the semiconductor manufacturing process, each component of the force sensor 4 on the silicon wafer in one process, the sensing member for detecting, and the sensing member This has the merit that a signal processing circuit or the like for processing the output signal can be manufactured.
[0055]
In addition, the structure for supporting the diaphragm part 11 in the sensor 4 is not limited to the above-described structure. When only the pressing force is assumed to be detected, the inner frame 25 is not provided and the fixed frame is directly provided. The diaphragm portion 11 may be supported by the beam portions 13 a and 13 b fixed to the member 17. Alternatively, the diaphragm portion 11 may be supported by the beam portions 13 a, 13 b, 13 c, and 13 d fixed to the fixed frame 17 without providing the inner frame 25. Furthermore, the configuration may be such that the pressing force is detected only by the diaphragm portion 11 without providing the beam portions 13a, 13b, 13c, and 13d.
[0056]
Further, the shape of the force sensor 4 and the shapes of the diaphragm portion 11, the beam portions 13a, 13b, 13c, and 13d, the fixed frame 17, and the inner frame 25 constituting the force sensor 4 are limited to the shapes shown in FIG. However, the position may be changed according to the shape of the panel 3 including the force sensor 4 and the position where the force sensor 4 is provided.
[0057]
(Method of detecting the force acting on the panel)
Next, a method using rigid body dynamics will be described as an example of a method for detecting the force applied to the panel 3. FIG. 3 shows the forces Fa, Fb, Fc, Fd detected by the force sensor 4 at four points A, B, C, D on the panel 3 when the force Fr acts on the point R on the panel 3. It is a figure explaining the method to calculate the position of the said point R based on.
[0058]
When component forces Fa, Fb, Fc, and Fd are detected in force sensors 4 (not shown) arranged at points A, B, C, and D, respectively, Fr and Fa, Fb, Fc, and Fd are detected. The relationship
Fr = Fa + Fb + Fc + Fd (1)
It becomes.
[0059]
Here, as coordinates indicating the positions of the points A, B, C, and D, the point A is the origin (0, 0), and B (m, 0), C (m, n), and D (0, n). ). In this case, the coordinates (Xr, Yr) of an arbitrary point R to which Fr is added on the panel 3 are obtained as follows.
[0060]
[Expression 1]

[0061]
[Expression 2]

[0062]
In the above description, the coordinates of the point R are determined with the point A as the origin, but the way of taking the coordinate axes is not limited to this. For example, the point where the opposing lines of the panel 3 intersect, that is, the center of the panel 3 may be the origin (0, 0), and the diagonal line of the panel 3 may be the coordinate axis. In other words, the method for setting the coordinate axes may be determined from the usage method of the panel sensor.
[0063]
Here, the number of force sensors 4 arranged on the panel 3 will be described. In order to determine the plane of the panel 3 as a plane, three or more geometric points are required. As the number of force sensors 4 arranged is increased, the force applied to one force sensor 4 is reduced, so that the force detection level is lowered. That is, when the number of force sensors 4 is increased, there are disadvantages such as a decrease in the reliability of the force detection results by the force sensors 4.
[0064]
On the other hand, when the number of force sensors 4 arranged on the panel 3 is three, the following problem occurs. When a force is applied to the inside of a triangle whose apex is the three points where the force sensor 4 is arranged, the signs of the component forces applied to these three points coincide. However, when a force is applied to the outside of the triangle whose apex is the three points where the force sensors are arranged, the signs of the three component forces do not match. In other words, when a force is applied to the outside of a triangle, one component force on the opposite side of the point where the force is applied is pulled with a straight line formed by connecting two points close to the point where the force is applied as a boundary. Become the side. In this case, the force sensor 4 is required to be able to detect both the compressive force and the tensile force. That is, when the positions of the force sensors 4 on the panels are three, there is a problem that the calculation for specifying the position of the force acting on each panel becomes complicated.
[0065]
In view of the above-described problems, the number of force sensors 4 is determined according to the environment in which the force sensor 4 is used, such as the detection capability of the force sensor 4 and the area, shape, and weight of the panel in which the force sensor 4 is provided. It may be determined accordingly. In general, for example, a panel used for a portable mobile device or the like is almost rectangular like the panel 3. In this case, as described above, the configuration in which the force sensors 4 are arranged at the four points in the vicinity of the corners of the panel 3 makes it easy to calculate the action point of the force, and the component force applied to each force sensor 4 is large. It also has the merit that it can be secured.
[0066]
(Force detection method in force sensor)
Hereinafter, as examples of the force detection method in the force sensor 4 described above, a method for detecting a minute pressing force and a method for detecting a relatively large pressing force will be described separately.
[0067]
(Detection method of minute pressing force)
When a slight force acts on the panel 3, the force sensor 4 detects the force by detecting the deformation of the thin film 16a. There is a gap between the thin film 16a and the diaphragm substrate 15, and when the thin film 16a is stretched and deformed, the panel support portion 14 can be freely displaced in the Z direction. That is, when a small force acts on the panel 3 in the Z direction, the thin film 16a is displaced in the Z direction according to the value of the force. When the thin film 16a is displaced, the distance between the thin film 16a and the upper surface of the diaphragm substrate 15 changes. Therefore, if a change in the distance is detected, a minute force acting on the panel can be detected.
[0068]
Here, a method for detecting a change in the distance between the thin film 16a and its lower surface 15 will be described with reference to FIGS. 5 (a) and 5 (b). 5A shows a state in which no force is applied to the panel 3, and FIG. 5B shows a state in which a force is applied to the panel 3, that is, a state in which a force is applied to the thin film 16a. Show.
[0069]
As shown in FIG. 5A, an electrode 31 is provided on the upper surface of the diaphragm substrate 15 so as to face the thin film 16a. The thin film 16a is also provided with an electrode (not shown) so as to face the electrode 31. A capacitor is formed by the electrode 31 provided on the diaphragm substrate 15 and the electrode provided on the thin film 16a.
[0070]
Here, as shown in FIG. 5B, when a force acts on the panel 3, the force also acts on the thin film 16a. As a result, the electrode provided on the thin film 16a and the diaphragm substrate 15 are applied. The distance from the provided electrode 31 changes. That is, when a force acts on the panel 3, the capacitance of the capacitor changes. Therefore, if the amount of change in the capacitance of the capacitor is detected, a change in the distance between the electrode provided on the thin film 16a and the electrode 31 provided on the diaphragm substrate 15 can be detected. Based on the above, the magnitude of the force acting on the force sensor 4 can be measured. In order to detect the amount of change in the capacitance of the capacitor, the potential difference between the electrode provided on the thin film 16a and the electrode 31 provided on the diaphragm substrate 15 and the change in the interval are detected. What is necessary is just to measure the change of the accompanying current.
[0071]
In the above configuration, the magnitude of the force that can be measured can be arbitrarily set by changing the thickness or area of the thin film 16a or changing the tension.
[0072]
(Detection method for relatively large pressing force)
Next, a force detection method using the force sensor 4 when a relatively large force acts on the panel 3 will be described with reference to FIGS. 6 (a) and 6 (b). FIG. 6A shows a configuration example in which force is detected by a capacitor method, and FIG. 6B shows a configuration example in which force is detected using a piezoresistive element.
[0073]
First, the configuration shown in FIG. As the force applied to the panel 3 increases, the distance between the thin film 16a and the diaphragm substrate 15 becomes narrower, and finally the thin film 16a and the diaphragm substrate 15 come into close contact with each other. Further, when the force applied to the panel 3 is increased, the beam portions 13a, 13b, 13c, and 13d bend in the Z direction, so that the diaphragm portion 11 itself moves in the Z direction. Therefore, the force applied to the force sensor 4 can be detected by detecting the amount of movement of the diaphragm portion 11 in the Z direction.
[0074]
In the configuration shown in FIG. 6A, the force sensor 4 is provided on the upper surface of the base 33 disposed below the diaphragm portion 11 in order to detect the amount of movement of the diaphragm portion 11 in the Z direction. An electrode 32 is provided at a position opposite to. An electrode (not shown) is provided on the lower surface of the diaphragm substrate 15 so as to face the electrode 32. A capacitor is formed by the electrode 32 provided on the base 33 and the electrode provided on the diaphragm portion 11.
[0075]
In the configuration of the force sensor 4 described above, when a large force in the Z direction acts on the diaphragm portion 11, the beam portions 13 a and 13 b bend, thereby displacing the diaphragm portion 11 in the Z direction. Thus, when the diaphragm part 11 is displaced in the Z direction, the distance between the electrode 32 provided on the base 33 and the electrode provided on the diaphragm part 11 changes. That is, the capacitance of the capacitor changes. Therefore, if the amount of change in the capacitance of this capacitor is detected, the amount of displacement of the diaphragm portion 11 in the Z direction can be detected. Based on this, the magnitude of the force acting on the force sensor 4 can be determined. It can be measured.
[0076]
Next, the configuration shown in FIG. 6B will be described. As described above, when a relatively large force is applied to the force sensor 4, the beam portions 13a, 13b, 13c, and 13d are bent in the Z direction. Therefore, the force applied to the force sensor 4 can be measured by detecting the deflection amount of the beam portions 13a, 13b, 13c, and 13d.
[0077]
In the configuration shown in FIG. 6B, on the upper surface side of the beam portions 13a and 13b, a position A close to the connection portion with the fixed frame members 17a and 17b and a position B close to the connection portion with the inner frame members 25a and 25b. In addition, a piezoresistive element is provided. The piezoresistive element generates an electric charge by electric polarization when it is deformed by applying a force. That is, by measuring the electric charge generated in the piezoresistive element, the deflection of the beam portions 13a and 13b can be detected, and based on this, the magnitude of the force acting on the force sensor 4 is detected. be able to. The piezoresistive element can be formed by impurity diffusion into silicon by ion implantation of boron or the like.
[0078]
Further, the positions of A and B in the beam portions 13a and 13b provided with the piezoresistive elements are positions where a relatively large deformation occurs when the beam portions 13a and 13b are bent. That is, when the diaphragm portion 11 moves downward, the position A is a position where the tensile strain is increased, and the position B is a position where the compressive strain is increased. Accordingly, the sign of the distortion detected at the position A is different from that of the distortion detected at the position B. If detection is performed using both the value of the portion A where the tensile strain is large and the value of the portion B where the compressive strain is large as described above, the detection can be performed with higher sensitivity. For example, if a difference between both outputs is used as an output signal, or a bridge circuit is created from the outputs of A and B and detected, even a minute signal can be detected with higher sensitivity.
In the above example, the deflection of the beam portions 13a and 13b is detected. However, the present invention is not limited to this. For example, the deflection of the beam portions 13c and 13d may be detected. . Furthermore, the structure which detects a deflection | deviation in all the beam parts 13a * 13b * 13c * 13d may be sufficient.
[0079]
According to the configuration shown in FIG. 6B, as a configuration for detecting force, a configuration in which piezoresistive elements are provided in the beam portions 13a and 13b is used. Compared with the configuration shown in FIG. 6A, such a configuration has an effect that the structure is simplified and the manufacturing cost can be reduced to the extent that the electrode 32 need not be formed.
[0080]
As described above, the force sensor 4 can detect the force by the change in the capacitance due to the displacement of the thin film 16a of the diaphragm portion 11 when a minute force acts on the panel. On the other hand, when a large force acts on the panel, the force can be detected by detecting a change in capacitance due to the displacement of the diaphragm portion 11 or by using a piezoresistive element provided in the beam portions 13a and 13b. Here, when detecting a large force acting on the panel, the thin film 16a may be destroyed by the action of the large force. However, according to the above configuration, when a predetermined force or more is applied, the thin film 16a becomes the diaphragm portion. Since it is in close contact with the substrate 15, it is possible to prevent the occurrence of destruction as described above.
[0081]
(Method for detecting force in X and Y directions)
In the configuration shown above, the sensing method relating only to the Z direction acting on the panel, that is, the pressing force has been described. In the following, a method for detecting forces in the X and Y directions acting on the panel will be described with reference to FIG.
[0082]
The forces in the X and Y directions are detected independently from the deflection of the beam portions 13a and 13b in the Y direction and the deflection of the beam portions 13c and 13d in the X direction. That is, the beam portions 13a and 13b can bend in the Y direction when a force in the Y direction acts on the force sensor 4. On the other hand, the beam portions 13c and 13d can bend in the X direction when a force in the X direction acts on the force sensor 4.
[0083]
The deflection amount of each of the beam portions 13a, 13b, 13c, and 13d can be detected by detecting a change in capacitance, as in the pressing force detection method described above. That is, an electrode (not shown) is provided on one of the side surfaces in the Y direction in each of the beam portions 13a and 13b, and the fixed frame member 17c or 17d facing the side surface in the beam portions 13a and 13b provided with electrodes is used as a dielectric portion. A capacitor is formed by providing an electrode (not shown).
[0084]
When a force acts in the Y direction and the beam portions 13a and 13b bend in the Y direction, the distance between the electrode provided in the beam portions 13a and 13b and the electrode of the fixed frame member 17c or 17d facing the electrode is increased. As a result, the capacitance of the capacitor is displaced. Therefore, if the displacement of the capacitance of the capacitor is detected, the deflection amount of each of the beam portions 13a and 13b can be detected.
[0085]
The detection of the force in the X direction can be performed in the same manner as the detection of the force in the Y direction. In other words, an electrode (not shown) is provided on one of the side surfaces in the X direction of each of the beam portions 13c and 13d, and the inner frame member 25a or 25b facing the side surface of the beam portions 13c and 13d provided with the electrodes serves as a dielectric portion. A capacitor is formed by providing an electrode (not shown).
[0086]
When a force acts in the X direction and the beam portions 13c and 13d bend in the X direction, the distance between the electrode provided on the beam portions 13c and 13d and the electrode of the inner frame member 25a or 25b facing the electrode is increased. As a result, the capacitance of the capacitor is displaced. Therefore, if the displacement of the capacitance of the capacitor is detected, the deflection amount of each of the beam portions 13c and 13d can be detected.
[0087]
Alternatively, a piezoresistive element may be formed on each of the beam portions 13a, 13b, 13c, and 13d, and a force in the X or Y direction may be detected from the strain of each of the beam portions 13a, 13b, 13c, and 13d. That is, piezoresistive elements are provided on the beam portions 13a and 13b so that the deflection of the beam portions 13a and 13b due to the force in the Y direction can be detected. More specifically, the piezoresistors are located at a position A close to the connecting portion with the fixed frame members 17a and 17b and a position B close to the connecting portion with the inner frame members 25a and 25b on the side surfaces in the Y direction of the beam portions 13a and 13b. An element is provided. Thereby, the force in the Y direction can be detected in the same manner as the method described with reference to FIG.
[0088]
Similarly, piezoresistive elements are provided in the beam portions 13c and 13d so that the deflection of the beam portions 13c and 13d due to the force in the X direction can be detected. More specifically, piezoresistive resistance is provided at a position A near the connection portion with the fixed frame members 17c and 17d and a position B near the connection portion with the inner frame members 25c and 25d on the side surfaces in the Y direction of the beam portions 13c and 13d. An element is provided. Thereby, the force in the X direction can be detected in the same manner as the method described with reference to FIG.
[0089]
Since the force sensor 4 has a gimbal spring structure as described above, the beam portions 13a and 13b and the beam portions 13c and 13d can detect forces in each direction independently of each other. That is, since the beam portions 13a, 13b, 13c, and 13d that support the diaphragm portion 11 are configured to have freedom with respect to the forces around the axes in the X direction and the Y direction, The force in the Y direction can be detected independently by the beam portions 13a and 13b and the beam portions 13c and 13d.
[0090]
According to the force sensor 4 configured as described above, a minute force can be measured by detecting the displacement of the thin film 16a, and a relatively large force can be detected by detecting the displacement of the diaphragm portion 11. Can be measured. Therefore, for example, it is possible to detect an input performed on the panel 3 with a finger, a touch pen, or the like, and it is also possible to detect various inputs with a weaker force.
[0091]
Further, since the force sensor 4 can independently detect a force acting in a direction perpendicular to the surface of the panel 3 and a force acting in a direction horizontal to the surface of the panel 3, the pressing force by a finger or a touch pen is used. In addition, various physical quantities acting on the panel 3 can be detected. That is, it is possible to provide a multifunction panel sensor that inputs various physical quantities.
[0092]
(Example of measurement by panel sensor)
According to the force sensor 4 as described above, only the panel sensor including the panel 3 and the force sensor 4... Applies a micro force or a force in a plurality of directions acting on the panel in addition to a pressing force by a finger or a touch pen. Measurement is possible. Therefore, various applications other than touch input can be performed. Hereinafter, a method for detecting an inertial force due to acceleration or inclination as a force acting on the panel other than the pressing force will be described.
[0093]
FIG. 7A and FIG. 7B show how the inertial force acts on the panel 3. FIG. 7A shows a case where the acceleration acts on the panel 3, and it is assumed that the acceleration α acts on the panel 3. FIG. 7B shows a case where the panel 3 is inclined by an angle β.
[0094]
When the acceleration α acts on the panel 3, if the weight of the panel is M, the inertial force acting on the panel 3 can be expressed as Mα. Therefore, by detecting the inertial force acting on the panel 3, that is, Mα by the force sensor 4, the acceleration acting on the panel 3 can be detected.
[0095]
When the panel 3 is inclined by an angle β, when the acceleration of gravity is G, MG cos β acts in a direction perpendicular to the panel 3 and MG sin β acts in a direction parallel to the panel 3. Therefore, if the inertial force acting in the direction perpendicular to the panel 3 and the direction parallel to each other is detected by the force sensor 4, the inclination angle β can be obtained.
[0096]
However, when the pressing force by a human finger is compared with the inertial force by tilting, there is a great difference in the magnitude of the force acting on both. For example, in order to detect the pressing force by a human finger, a range of several g to several hundred g is required as a range of the magnitude of the force that can be detected. Therefore, although the detection resolution of the force sensor 4 varies depending on the specific resolution of the required panel input coordinates, at least about 0.1 g is required.
[0097]
On the other hand, the range of the magnitude of the detectable force required for detecting the acceleration and the tilt angle is substantially different depending on the weight of the panel. For example, when the inclination angle is calculated when the weight of the panel 3 is about 3 g, the magnitude of the force applied to one sensor 4 is about ± 0.75 g. Therefore, the sensor 4 needs to be able to detect a force of at least this magnitude. Further, in this case, in order to allow the force sensor 4 to detect a gravitational acceleration of about 3G with respect to the acceleration applied to the panel 3, the range of the magnitude of the force that can be detected by each force sensor 4 is at least about Up to about 2.3 g is required.
[0098]
The detection resolution of the force sensor 4 varies depending on the force detection resolution with respect to the required angle and the force resolution with respect to the required acceleration. For example, if it is necessary to detect an inclination angle of 0.1 °, the force sensor 4 has a detection capability of 10 ^-3 The ability to detect a force of about g is required.
[0099]
On the other hand, the force sensor 4 of the present invention shown in FIG. 1 detects a pressing force which is a large force from the displacement in the Z direction of each of the beam portions 13a, 13b, 13c, and 13d, and detects the X direction of the beam portions 13a and 13b. In this configuration, inertial force in the X direction and Y direction can be detected from the displacement and the displacement in the Y direction of the beam portions 13c and 13d. However, in this case, since the difference between the inertia force and the pressing force is large, the sensitivity of the displacement in the Y direction of the beam portions 13a and 13b and the displacement in the X direction of the beam portions 13c and 13d, and the sensitivity of the beam portions 13a, 13b, 13c, and 13d There must be a big difference in the sensitivity of displacement in the Z direction.
[0100]
To that end, in the cross-sectional shapes of the beam portions 13a, 13b, 13c, and 13d, a difference in sensitivity can be caused by designing the width in the X direction or the Y direction to be smaller than the height in the Z direction. . As a result, a large force such as a pressing force can be detected by the displacement in the Z direction, and a minute force such as an inertial force acting in the X or Y direction can be detected by the displacement in the X or Y direction. can do. When such a force sensor 4 is configured, the cross-sectional shapes of the beam portions 13a, 13b, 13c, and 13d need to have a larger aspect ratio. However, since it is very difficult to create a three-dimensional structure having a large aspect ratio by a semiconductor manufacturing process, there is a problem that it is difficult to manufacture the force sensor 4. Therefore, another configuration example of the force sensor 4 that can overcome this problem will be described below.
[0101]
(Another configuration example of the force sensor)
The configuration of another force sensor 4 that can detect an inertial force will be described with reference to FIGS. 8, 9A, and 9B. FIG. 8 shows the configuration of the force sensor 4. FIGS. 9A and 9B show the displacement of the thin film 16a in the force sensor 4 when a force is applied in the Z direction and the X direction. The state of each is shown.
[0102]
The force sensor 4 shown in FIG. 8 differs from the force sensor 4 shown in FIG. 4 in the shape of the thin film member 16 in the diaphragm portion 11. As shown in FIG. 8, the thin film member 16 includes a thin film support portion 16b, a first thin film 16a1, a second thin film 16a2, and a third thin film 16a3. Although not shown, a fourth thin film 16a4 and a fifth thin film 16a5 are also provided. The second thin film 16a2, the third thin film 16a3, the fourth thin film 16a4 and the fifth thin film 16a5 form a quadrangular side wall, and the first thin film 16a1 forms a bottom surface. The thin film structure is formed.
[0103]
In addition, as shown in FIG. 8, the connection point between the second thin film 16a2 and the thin film support 16b, the connection point between the second thin film 16a2 and the first thin film 16a1, and the third thin film 16a3 and the first thin film 16a3 Piezoresistive elements C1, C2, C3, and C4 are respectively provided at points that are connected to the first thin film 16a1 and points that are connected to the third thin film 16a3 and the thin film support 16b. Although not shown in the figure, a point serving as a connection part between the fourth thin film 16a4 and the thin film support part 16b, a point serving as a connection part between the fifth thin film 16a5 and the thin film support part 16b, the fourth thin film 16a4 and the first Piezoresistive elements C5, C6, C7, and C8 are also provided at points that serve as connection portions with the thin film 16a1 and at points that serve as connection portions between the fifth thin film 16a5 and the first thin film 16a1, respectively. By these piezoresistive elements C1 to C8, a minute force acting in three directions of the X direction, the Y direction, and the Z direction can be detected only by the thin film structure of the diaphragm portion 11. Details of this detection method will be described below with reference to FIGS. 9 (a) and 9 (b).
[0104]
FIG. 9A shows the displacement of the thin film structure when Fz acts as a force in the Z direction, that is, a pressing force. When force Fz acts, the space | interval of the 1st thin film 16a1 and the diaphragm part board | substrate 15 which opposes this becomes short. Accordingly, the displacement between the first thin film 16a1 and the diaphragm substrate 15 is detected by the piezoresistive elements C2 and C3 provided in the first thin film 16a1, thereby detecting the pressing force (force in the Z direction). Can do.
[0105]
On the other hand, FIG. 9B shows the displacement of the thin film structure when the force Fx acts in the X direction. Note that the state when the force is applied in the Y direction is the same as that in the X direction, and is omitted. When the force Fx acts in the X direction, the second thin film 16a2 and the third thin film 16a3 are pulled and displaced in the direction in which the force Fx acts. Therefore, the direction and magnitude of the force of Fx can be known by detecting the magnitude and sign of the strain generated at the position of the piezoresistive elements C1, C2, C3, and C4. For example, tensile strain acts on the piezoresistive elements C1 and C3, and compressive strain acts on the piezoresistive elements C2 and C4. Therefore, the magnitude and direction of the piezoresistive elements C2 and C4 can be known by setting the difference between them as Fx output.
[0106]
In the configuration described above, the piezoresistive elements C1, C2, C3, and C4 are configured to detect all three axial directions of the X direction, the Y direction, and the Z direction. However, it may be configured to detect the force in the Z-axis direction, that is, the pressing force in the same manner as the configuration shown in FIG. That is, a capacitor may be formed by providing electrodes on the upper surface of the diaphragm substrate 15 and the first thin film 16a1, and the force in the Z-axis direction may be detected by detecting the capacitance of the capacitor. The force in the X direction and the Y direction may be detected by the piezoresistive elements C1, C2, C3, and C4 provided in the thin film structure.
[0107]
According to said structure, the detection of the force with respect to the X-axis direction of X, Y, and Z can be performed by the diaphragm part 11. FIG. That is, inertial forces such as acceleration and gravity can be detected by one detection unit. However, when the magnitude of the pressing force applied to the panel 3 by the human finger and the magnitude of the inertial force due to acceleration, inclination, etc. are significantly different, both are measured by one detection unit as in the above configuration. If it does so, there exists a problem that the detection sensitivity of the inertia force which is a small force becomes worse than the detection sensitivity of pressing force. Further, since it is very difficult to keep the detection output of the force sensor 4 linear with respect to a wide range of force magnitudes, a force sensor having a highly accurate detection capability is required.
[0108]
Therefore, in order to solve this problem, as in the configuration shown in FIG. 3, with respect to a large pressing force, a force is measured by detecting the displacement of the diaphragm portion 11 as a first detection portion, and a small force It is preferable that the inertial force or the like is configured so that the force is measured by the piezoresistive element provided in the thin film structure as the second detection unit. In this way, by dividing the two detection units into a configuration that detects a large pressing force and a small inertial force, it is possible to eliminate the problem that the detection sensitivity to the inertial force deteriorates. There is no need to maintain a linearity over a wide range.
[0109]
In the configuration of the force sensor 4 described above, the direction of the force and the magnitude of the force detected by the first detector, and the direction of the force and the magnitude of the force detected by the second detector. May be arbitrarily set according to the use purpose and use environment of the device on which the touch panel is mounted.
[0110]
Further, in the configuration of the force sensor described above, an example in which the inertial force acting on the panel 3 is detected by acceleration / inclination has been described. However, the detected force is limited to the inertial force due to the acceleration or the inclination of the panel. It is not a thing. For example, the panel 3 can be used as a microphone if it is configured to detect vibration of the panel 3 by sound instead of inertial force due to acceleration or panel tilt. That is, the magnitude of the force acting on the panel 3 due to the vibration of the voice is very small compared to the force of the pushing force by the finger or the like, so the vibration due to the voice is detected by the second detection unit for detecting a minute force. What is necessary is just to comprise so. Furthermore, if the force sensor 4 is configured so that the displacement of the panel 3 due to the contraction of the panel 3 due to the temperature can be detected in each of the three axial directions, the panel sensor 2 is determined from the relationship between the displacement of the force due to the contraction of the panel 3 and the temperature. It can also function as a thermometer.
[0111]
(Another configuration example of the force sensor)
In the panel sensor 2 described above, the force is detected by providing the panel 3 with a force sensor having the configuration shown in FIG. On the other hand, in this configuration example, as shown in FIG. 10, piezoelectric elements 22 a, 22 b, 23 a, 23 b, 24 a, and 24 b are provided as force detection sensors for the panel 21 corresponding to the panel 3 described above. It is provided so that the force acting in the direction, that is, the X, Y, and Z directions can be detected. The piezoelectric elements 22a, 22b, 23a, 23b, 24a, and 24b are fixed by a sensor mounting substrate (not shown). The piezoelectric elements 22a, 23a, and 24a detect a large force such as a pressing force by a finger, and the piezoelectric elements 22b, 23b, and 24b are configured to detect a minute force such as an inertial force. .
[0112]
Since force detection by a piezoelectric element is a well-known technique, it is not necessary to have a more complicated configuration than the above-described force sensor 4 created using a semiconductor process, and a commercially available product is used. In addition, since the size is relatively large and handling is easier than a force sensor created using a semiconductor process, the piezoelectric elements 22a, 22b, 23a, 23b, 24a, and 24b can be applied to the panel 21. Installation is also easy. However, in the configuration shown in FIG. 10, the force detected by each piezoelectric element 22a, 22b, 23a, 23b, 24a, and 24b includes a large influence of the force from other directions, that is, crosstalk. . Therefore, it is necessary to provide a circuit for correcting this crosstalk. Further, there is a problem in that each piezoelectric element for detecting a large force and a minute force must be prepared separately in each direction, that is, in the three axis directions of X, Y, and Z.
[0113]
(Application example of panel sensor)
The panel sensor 2 according to the present embodiment can detect forces in three directions of the X direction, the Y direction, and the Z direction, and has a large force such as a pressing force by a finger and a small force such as an inertial force. Both can be accurately detected. Therefore, the panel sensor 2 is preferably an information device having an acceleration detection function, an inclination detection function, an acoustic detection function, a temperature detection function, and the like as well as a touch panel function by being mounted on an information device such as a mobile phone or a PDA. Can be provided.
[0114]
For example, a pedometer (registered trademark) function can be mounted on an information device by using an acceleration detection function or an inclination detection function. Furthermore, if the magnitude of acceleration is recorded for a certain period of time, the amount of exercise within that time can be measured, so it can also be used for exercise amount management.
[0115]
In addition, when the user touches the panel 3 with his / her finger, the direction and magnitude of the force applied to the panel 3 are different when the user performs a tapping operation, a stroking operation, a scratching operation, etc. It is possible to identify these. Therefore, it is also possible to provide an information device capable of performing various inputs by consciously switching the type of contact operation. In other words, the input method to the information device can input various forces acting on the panel as well as a pressing force by a finger or a pen that is generally assumed at present.
[0116]
Further, if the audio signal can be picked up from the vibration of the panel 3, the user can input the audio by speaking to the screen while looking at the screen. That is, by providing the panel sensor 2 in the information device, it is possible to eliminate the need to separately install a voice input means such as a microphone in the information device. Also, with such a configuration, for example, by tracing the screen on the map displayed on the screen using the touch panel function, the route is shown while talking to the other party, and the route is shown to the other party in real time. Applications such as teaching are born.
[0117]
Furthermore, in the panel sensor 2 according to the present embodiment, the above description has been made with respect to the case where force is input to the panel 3 from the outside. However, if the force sensor 4 is actively used, the range of applications is further increased. Can be spread. For example, an electrical electrical signal transmitted from a device is input to the sensor according to the present invention to actively drive the sensor. The drive is transmitted to the panel, and the panel vibrates in proportion to the audio signal. The vibration is converted into air vibration, and the panel can have a speaker function. Therefore, it is possible to provide the touch panel with a function of a speaker.
[0118]
As described above, the panel sensor according to the present invention is a panel sensor including a panel and a plurality of force sensors that detect a force acting on the panel, and the plurality of force sensors are in a direction substantially perpendicular to the panel surface. The force acting on the panel surface and the force acting on the panel surface in a substantially horizontal direction can be detected independently of each other.
[0119]
The panel sensor may detect a touch input function that specifies a position or magnitude of a force acting on the panel and an input other than the touch input that acts on the panel.
[0120]
In the panel sensor, the input other than the touch input may be an inertial force. Furthermore, the input other than the touch input may be acoustic vibration. Further, the input other than the touch input may be a temperature.
[0121]
In the panel sensor, a force sensor that detects an input to the panel is disposed around the panel, and the force sensor detects a force applied to the panel with respect to an input to the panel; and You may provide the 2nd detection part which detects the force smaller than the force applied to the panel which a 1st detection part detects.
[0122]
Further, the first detection unit and the second detection unit of the force sensor may detect forces in a plurality of directions acting on the panel.
[0123]
In addition, the panel sensor specifies a position on the panel of the force applied to substantially one point of the panel surface from outputs of the first detection unit or the second detection unit of the plurality of force sensors arranged around the panel. May be.
[0124]
In the panel sensor, the force sensor may be made of silicon.
[0125]
Further, the structure of the force sensor made of silicon may be a structure in which a diaphragm is supported by a beam.
[0126]
The sensing means of the force sensor may detect a displacement of the structure due to the force by a change in capacitance, and may detect a force applied to the force sensor from the amount of change.
[0127]
The sensing means of the force sensor may detect the displacement of the structure due to the force from the strain of the structure, and may detect the force applied to the force sensor from the amount of the strain.
[0128]
Further, the diaphragm of the force sensor may have a substantially central portion that is a recessed portion with respect to a substantially peripheral portion.
[0129]
The force sensor may be composed of a plurality of piezoelectric elements.
[0130]
An information device having a panel and a panel sensor having a force sensor that independently detects a force acting in a direction substantially perpendicular to the panel surface and a force acting in a direction substantially horizontal to the panel surface. May be configured.
[0131]
【The invention's effect】
As described above, the panel sensor according to the present invention is a panel sensor that detects a force acting on a panel, and includes a force detection unit that detects a force acting on the panel, and the force detection unit. However, it is the structure provided with the some detection part which each detects the component force which isolate | separated the force which acts with respect to the said panel into several direction component.
[0132]
Thereby, for example, not only a force in a direction perpendicular to the surface of the panel but also a force in another direction, for example, a direction horizontal to the surface of the panel can be detected. That is, since the forces in various directions acting on the panel can be detected, the panel sensor can be used in various applications.
[0133]
The panel sensor according to the present invention is a panel sensor that detects a force acting on the panel, and includes a force detection unit that detects a force acting on the panel, and the force detection unit includes the above-described force detection unit. It is the structure provided with the some detection part which detects the force corresponding to each range which divided | segmented the magnitude | size of the force which acts on a panel into the some range.
[0134]
As a result, various types of forces acting on the panel can be detected with high accuracy, so that the panel sensor can be used in various applications.
[0135]
In the panel sensor according to the present invention, the force detection unit further includes a plurality of detection units that detect a force corresponding to each range obtained by dividing the magnitude of the force acting on the panel into a plurality of ranges. It is good also as a structure provided.
[0136]
As a result, in addition to the effects of the above-described configuration, it is possible to accurately detect various types of force acting on the panel, and thus it is possible to detect forces in various directions. Due to the synergistic effect of being present, the panel sensor can be used in various applications.
[0137]
Moreover, the panel sensor which concerns on this invention is good also as a structure by which the said force detection means is arrange | positioned corresponding to three or more places in the planar position of the said panel.
[0138]
Thereby, in addition to the effect by the above configuration, the plane position of the action point of the force acting on the panel can be specified based on the force detected by each force detecting means. Can be made to function as a touch sensor in which an input operation is performed depending on a position where a force is applied.
[0139]
Moreover, the panel sensor which concerns on this invention is good also as a structure with which the said force detection means is equipped with the detection part which detects the force which acts on the said panel by the displacement of a thin film.
[0140]
As a result, in addition to the effects of the above-described configuration, the thin film is sensitive to displacement even with a minute force, so that the minute force can be accurately detected. Play.
[0141]
Further, in the panel sensor according to the present invention, the thin film is displaced in a plurality of directions according to the direction of the force acting on the panel, and the force detecting means is a component in a plurality of directions of the displacement of the thin film. It is good also as a structure provided with the some detection part corresponding to.
[0142]
Thereby, in addition to the effect by said structure, there exists an effect that it becomes possible to detect how much and how big the micro force with respect to a panel is.
[0143]
In the panel sensor according to the present invention, the detection unit has a capacitance of a capacitor configured by an electrode provided on the thin film and an electrode provided at a position where the detection unit does not move according to the displacement of the thin film. It is good also as a structure which detects the displacement of the said thin film by detecting a change.
[0144]
Thereby, in addition to the effect by said structure, the minute change of the displacement of a thin film can also be detected exactly. That is, there is an effect that a minute force acting on the panel can be precisely measured.
[0145]
Moreover, the panel sensor which concerns on this invention is good also as a structure in which the said detection part detects the displacement of the said thin film by the strain detection means which detects the distortion which arises in the said thin film.
[0146]
Thereby, in addition to the effect by said structure, the minute change of the displacement of a thin film can also be detected exactly. That is, there is an effect that a minute force acting on the panel can be precisely measured.
[0147]
Further, the panel sensor according to the present invention includes a displacement part in which the force detection means is displaced according to a force acting on the panel, a fixed part that does not move according to the displacement of the displacement part, and the displacement part. It is good also as a structure provided with the elastic member which connects the said and fixed part fixedly, and the detection part which detects the displacement of the said displacement part.
[0148]
Thereby, in addition to the effect by said structure, there exists an effect that the detection range of the magnitude | size of force can be set suitably by setting the magnitude | size of the elasticity of an elastic member suitably.
[0149]
In the panel sensor according to the present invention, the elastic member may be a beam portion having one end fixedly connected to the displacement portion and the other end fixedly connected to the fixing portion.
[0150]
Thereby, in addition to the effect by said structure, there exists an effect that it becomes possible to detect the component force of the specific direction of the force which acts on a panel.
[0151]
In the panel sensor according to the present invention, the detection unit includes a capacitance of a capacitor configured by an electrode provided at the displacement unit and an electrode provided at a position where the detection unit does not move according to the displacement of the displacement unit. It is good also as a structure which detects the displacement of the said displacement part by detecting the change of a capacity | capacitance.
[0152]
Thereby, in addition to the effect by said structure, the slight change of the displacement of a displacement part can also be detected accurately. That is, there is an effect that the force acting on the panel can be accurately measured.
[0153]
Moreover, the panel sensor which concerns on this invention is good also as a structure in which the said detection part detects the displacement of the said displacement part by the distortion detection means which detects the distortion which arises in the said beam part.
[0154]
Thereby, in addition to the effect by said structure, the slight change of the displacement of a displacement part can also be detected accurately. That is, there is an effect that the force acting on the panel can be accurately measured.
[0155]
The panel sensor according to the present invention may be configured such that the force detection means is manufactured by a semiconductor manufacturing process.
[0156]
Thereby, in addition to the effects of the above configuration, in one process, for example, each component of the force detection means on the silicon wafer, the sensing member for performing the detection, and the signal for processing the output signal from the sensing member There is an effect that a processing circuit or the like can be manufactured.
[0157]
Further, the panel sensor according to the present invention may have a configuration in which the detection unit is configured by a piezoelectric element.
[0158]
Thereby, in addition to the effect by said structure, while a force detection means can be comprised easily, there exists an effect that attachment to a panel of a piezoelectric element can also be performed easily.
[0159]
The information device according to the present invention includes a display panel that displays information and the panel sensor according to the present invention.
[0160]
Accordingly, for example, even for portable information equipment, there is an effect that it is possible to have a configuration having various functions without causing an increase in the size of the apparatus or an increase in cost.
[Brief description of the drawings]
FIG. 1 is a perspective view showing a schematic configuration of a force sensor included in a panel sensor according to an embodiment of the present invention.
FIG. 2 is a perspective view showing an appearance of the panel sensor.
FIG. 3 is a diagram illustrating a method for specifying a position of a force acting on a panel included in the panel sensor.
4 is a cross-sectional view of the force sensor shown in FIG.
5A and 5B are cross-sectional views showing a configuration example of a force sensor when a force is applied in the Z direction.
6A and 6B are cross-sectional views showing another configuration example of the force sensor when a force is applied in the Z direction.
FIG. 7A is a diagram showing a state when acceleration is applied to the panel sensor, and FIG. 7B is a diagram showing a state when the panel sensor is tilted.
FIG. 8 is a cross-sectional view showing another configuration of the force sensor.
9A is a cross-sectional view showing the configuration of the diaphragm portion when a force is applied in the Z direction, and FIG. 9B is a cross-sectional view of the diaphragm portion when a force is applied in the X direction. It is sectional drawing which shows a structure.
FIG. 10 is a partial perspective view showing a schematic configuration of a panel sensor using a piezoelectric element as a force detection sensor.
[Explanation of symbols]
2 Panel sensor
3 panels
4 Force sensor (force detection means)
5 Display panel
11 Diaphragm part (displacement part)
13a / 13b / 13c / 13d Beam
14 Panel support
15 Diaphragm board
16 Thin film members
16a thin film
16a1, 16a2, 16a3 first to third thin films
17 Fixed frame (fixed part)
17a, 17b, 17c, 17d Fixed frame member
22a / 22b / 23a / 23b / 24a / 24b Piezoelectric element
25 Internal frame
25a / 25b / 25c / 25d Internal frame member
31 and 32 electrodes

Claims (16)

A panel sensor for detecting a force acting on a panel,
A force detecting means for detecting a force acting on the panel;
A panel sensor comprising: a plurality of detectors each detecting a component force obtained by separating the force acting on the panel into a plurality of directional components. A panel sensor for detecting a force acting on a panel,
A force detecting means for detecting a force acting on the panel;
A panel sensor, wherein the force detection means includes a plurality of detection units for detecting a force corresponding to each range obtained by dividing the magnitude of the force acting on the panel into a plurality of ranges. The said force detection means is further provided with the some detection part which detects the force corresponding to each range which divided | segmented the magnitude | size of the force which acts with respect to the said panel into several range. The panel sensor according to 1. The panel sensor according to any one of claims 1 to 3, wherein the force detecting means is arranged corresponding to three or more locations in a planar position of the panel. The panel sensor according to any one of claims 1 to 4, wherein the force detection means includes a detection unit that detects a force acting on the panel by a displacement of the thin film. The thin film is displaced in a plurality of directions according to the direction of the force acting on the panel, and the force detection means includes a plurality of detection units corresponding to components in the plurality of directions of the displacement of the thin film. The panel sensor according to claim 5, wherein: The detection unit detects a change in capacitance of the capacitor formed by an electrode provided on the thin film and an electrode provided at a position that does not move according to the displacement of the thin film. The panel sensor according to claim 5 or 6, wherein a displacement is detected. 7. The panel sensor according to claim 5, wherein the detection unit detects a displacement of the thin film by a strain detection means for detecting a strain generated in the thin film. A displacement part that is displaced according to the force acting on the panel, a fixed part that does not move according to the displacement of the displacement part, and the displacement part and the fixed part are fixedly connected. The panel sensor according to any one of claims 1 to 8, further comprising: an elastic member that performs detection; and a detection unit that detects a displacement of the displacement unit. The panel sensor according to claim 9, wherein the elastic member is a beam portion having one end fixedly connected to the displacement portion and the other end fixedly connected to the fixing portion. The detection unit detects a change in capacitance of a capacitor configured by an electrode provided in the displacement unit and an electrode provided in a portion that does not move in accordance with the displacement of the displacement unit. The panel sensor according to claim 9 or 10, wherein the displacement of the displacement portion is detected. The panel sensor according to claim 9, wherein the detection unit detects a displacement of the displacement unit by a strain detection unit that detects a strain generated in the beam unit. The panel sensor according to claim 1, wherein the force detection unit is manufactured by a semiconductor manufacturing process. The panel sensor according to claim 1, wherein the detection unit is configured by a piezoelectric element. The force detection means detects at least one of pressing force acting on the panel, inertial force acting on the panel, vibration due to sound of the panel, and deformation due to temperature change of the panel. The panel sensor according to any one of claims 1 to 14, wherein: A display panel for displaying information;
An information device comprising the panel sensor according to any one of claims 1 to 14.

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