JP2004527919A - Connection terminal structure - Google Patents
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- JP2004527919A JP2004527919A JP2003500969A JP2003500969A JP2004527919A JP 2004527919 A JP2004527919 A JP 2004527919A JP 2003500969 A JP2003500969 A JP 2003500969A JP 2003500969 A JP2003500969 A JP 2003500969A JP 2004527919 A JP2004527919 A JP 2004527919A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/115—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
- H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
- H01L2924/13055—Insulated gate bipolar transistor [IGBT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Conversion In General (AREA)
- Inverter Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Combinations Of Printed Boards (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Abstract
【解決手段】電力半導体モジュールは、導電性の蓋板（２）、導電性の底板、ならびにこれらの蓋板と底板との間に配置された絶縁性の容器壁（３）を持つモジュール容器を有する。このモジュール容器内には、電力半導体回路が収納されている。この電力半導体回路の二つの端子（５，６）は、モジュール容器から引き出されており、その際この少なくとも二つの端子の中の第一の端子（５）が、蓋板との接続端子として配備されている。これらの二つの端子（５，６）は、モジュール容器から引き出されている基板（４）の対向する平板上に配置されており、端子間を標準のコネクターを用いて接続することができる。
この発明にもとづく電力半導体モジュールは、安定性およびインダクタンスに関して改良された接続端子を有する。A power semiconductor module includes a module container having a conductive lid plate (2), a conductive bottom plate, and an insulating container wall (3) disposed between the lid plate and the bottom plate. Have. A power semiconductor circuit is housed in this module container. The two terminals (5, 6) of the power semiconductor circuit are drawn out of the module container, the first terminal (5) of the at least two terminals being provided as a connection terminal with the cover plate. Have been. These two terminals (5, 6) are arranged on opposite flat plates of the substrate (4) drawn out of the module container, and the terminals can be connected using a standard connector.
The power semiconductor module according to the invention has connection terminals which are improved with respect to stability and inductance.
Description
【技術分野】
【０００１】
この発明は、パワーエレクトロニクスの分野に関連する。この発明は、請求項１の上位概念にもとづく電力半導体モジュールに関するものである。
【背景技術】
【０００２】
所謂「ホッケーパック」形の半導体モジュールは、例えば複数のモジュールから成るスタック形式で利用される半導体モジュールであり、その際このモジュールは、通常ホッケーのパックの形状を持つ、すなわち二つの基本的に平行に向かい合った底面を持つ円筒形の形状である。これらの底面は、電気を伝導する形で構成され、この半導体の出力電極または主電極（エミッタ、コレクタ）と接続されている一方、底面間の側壁は、電気を絶縁する形で構成されている。複数の直列に接続されたモジュールを持つスタックにおいては、主電流路の二つのモジュールの間には、それぞれヒートシンクが配置されている。これらの電力半導体部品の制御と監視のために、制御用の端子（ゲート）と補助の端子（補助エミッタ）が、それぞれモジュール容器から引き出されている。従来の「ホッケーパック」形モジュールでは、これらの端子は、突出した形のピンで構成され、その際補助の端子は、一方の底面（エミッタ）上に半田付けされている。
【０００３】
これらのピンは、力が加わると簡単に折れてしまうことがある。同様に、半田付けされた箇所も損傷してしまうことがある。さらに、ピン状の接続端子間のインダクタンスは、比較的大きい。
【０００４】
特許文献１によって、電気的に絶縁された容器内にＩＧＢＴから成る半導体回路を有する半導体モジュールが周知である。ＩＧＢＴの主電極には、モジュール容器から側壁を通して引き出されている二つの出力端子が接続されている。これらの出力端子は、基本的に平板として構成され、これらの平板は、一つの絶縁層によって分離され、互いに平行に配置されている。ＩＧＢＴの制御用の端子は、側壁の別の場所を通してモジュールから引き出されている。
【特許文献１】
欧州特許公開第７７２２３５号明細書
【発明の開示】
【発明が解決しようとする課題】
【０００５】
この発明の課題は、接続端子の安定性と接続端子間のインダクタンスに関して改良された、はじめに述べた形の電力半導体モジュールを提示することである。
【課題を解決するための手段】
【０００６】
この課題は、請求項１の特徴を持つ電力半導体モジュールによって解決される。
【０００７】
この発明の要点は、モジュール容器から引き出された電力半導体回路の二つの端子が、モジュール容器から引き出されたプリント回路基板（Printed Circuit Board, PCB）の対向する面上に配置されること、この基板が固定手段によって蓋板に力で締め付ける形で固定されることであり、その結果基板と蓋板との間に配置された蓋板側の端子が、電気を伝導する形で蓋板と接合されることとなり、その際この固定手段は、有利には接合箇所の区域に配置されるものである。
【０００８】
このことによって、これらの端子は、インダクタンスが低減されるとともに、安定性が向上される。さらに、蓋板と蓋板側の端子との間に最適な電気的接続が保証されるものである。
【０００９】
有利には、これらの蓋板および／または蓋板側の端子は、接合箇所の区域にぎざきざを持つ。このことによって、電気的な接続が、さらに改良される。その結果、変動する条件（温度、湿度）においても、より長期間にわたり信頼性の有る電力用接続端子を実現することができる。
【００１０】
この発明にもとづく電力半導体モジュールの別の有利な実施形態においては、蓋板および基板は、それぞれ少なくとも二つの突出部を持つ。これらの蓋板および基板の突出部は、それぞれ重なり合って配置されるとともに、固定手段は、これらの突出部の区域に配置される。さらに、基板は、これらの二つの突出部の間に少なくとも一つの別の突出部を有する。
【００１１】
蓋板の二つの突出部は、基板のこの別の突出部を衝撃から保護するために配備されたものである。この別の突出部は、その端子間を従来のコネクターを用いて接続することができるように、有利には基本的に長方形の形状に構成される。
【発明を実施するための最良の形態】
【００１２】
以下において、図面に描かれた実施例をもとに、この発明の詳細な説明を行う。
【００１３】
すべての図面において、同じ符号は、同じ機能を持つ構成部分に対応している。
【００１４】
図１における電力半導体モジュールは、二つの電力半導体から成る電力半導体回路１を有する。この電力半導体回路の機能と構成は、任意であり、この発明には関係しないものである。そして、例えば複数の予め製作可能なサブモジュールの半導体部品を組み立てる形態も可能である。
【００１５】
電力半導体回路１は、基本的に導電性の蓋板２、導電性の底板９、ならびにこれらの間に配置された絶縁性の容器壁３から成るモジュール容器内に格納されている。
【００１６】
電力半導体回路１の出力端子または主端子は、従来の「ホッケーパック」形モジュールのように、導電性の蓋板および底板と電気を伝導する形で接合されている。
【００１７】
電力半導体用の制御信号、例えばＩＧＢＴ（絶縁ゲートバイポーラトランジスタ）用のゲート制御信号は、母線と制御用の端子導体６を介して、容器から引き出されている。
【００１８】
この発明では、この制御用の端子導体６は、両面を金属被覆された基板４の一方の面上に配置されている。この基板の別の面上には、蓋板２と電気を導電する形で接合された蓋板側の端子導体５がある。
【００１９】
図２は、この発明にもとづく電力半導体モジュールの部分を上から見た形で表している。
【００２０】
容器壁３と蓋板２との間には、両面を金属被覆された基板４が配置されている。蓋板に面する上方の側には、蓋板側の端子導体５が有る。容器壁に面する下方の側には、二つの制御用の端子導体６が有る。
【００２１】
蓋板２は、モジュール容器の縁から突き出た二つの突出部２１を有する。図３から明らかなように、この基板は、蓋板の突出部２１の下に配置された、二つの対応する突出部４１を有する。これらの突出部２１と４１は、固定手段７、例えば鋲またはねじで結合されている。このことにより、基板の上側に配置された蓋板側の端子導体５１と蓋板との間には、導電性の結合が形成される。蓋板の突出部２１の下側には、ぎざぎざ２２（ぎざぎざに刻まれた表面）が形成されている。数１００μｍまでの長さのぎざぎさの先端を、基板の金属被覆に押し付けることにより、電気的な接続を改善することができる。
【００２２】
基板は、二つの突出部４１の間に、別の突出部４２を有する。この突出部４２は、図４から明らかなように、コネクター８を装着するためのものである。コネクター８は、矢印の方向に突出部４２に押し込まれる。コネクター内に配置された接触部が、基板４の両側に配置された端子５２と６１に押し付けられる。コネクターとしては、従来の基板コネクターを用いることができる。
【００２３】
突出部４２は、蓋板の突出部２１によって、上からと横からの衝撃に対して保護されている。
【００２４】
図５と図６は、一つの制御用の端子６１だけを持つ基板の別の実施形態を表している。さらに、固定手段用の貫通部７１の区域に、蓋板側の端子導体５１のぎざぎざ５３を形成している。このぎざぎざに刻まれた表面によって、蓋板との電気的な接続を改善することができる。
【００２５】
この基板は、モジュール容器の内部に、制御母線との接続端子としての機能を持つ別の突出部４３を有する。垂直の接続部品（ここには描かれていない）が、制御用の端子導体６２を母線と接続している。突出部２１に形成された貫通部７１の他に、別の固定手段用の貫通部を設けることができる。
【００２６】
図示した実施形態の他に、複数のコネクター用に互いに並んで配置された複数の突出部を用いることが考えられる。その場合、各コネクターの間には、それぞれ各突出部を保護するための蓋板の突出部を設けることができる。
【００２７】
さらに、基板の突出部毎に一つまたは二つより多い制御用の端子を設けることも考えられる。
【００２８】
特に、各導体層が少なくとも一つの端子を持つ三層または多層基板を有する実施例を考えることもできる。
【図面の簡単な説明】
【００２９】
【図１】蓋板と基板を有する、この発明にもとづく電力半導体モジュール
【図２】蓋板と第一の実施形態の基板を有する、図１の電力半導体モジュールの部
分図
【図３】図２の電力半導体モジュールのＩＩＩ−ＩＩＩにおける断面図
【図４】図２の電力半導体モジュールのＩＶ−ＩＶにおける断面図
【図５】図２に対応する、第二の実施形態の基板を上から見た図
【図６】図５の基板を下から見た図
【符号の説明】
【００３０】
１ 電力半導体回路
２ 導電性の蓋板、エミッタ板
３ 絶縁性の容器壁
４ 絶縁性の基板
５，５１ 蓋板側の端子導体
６，６２ 制御用の端子導体
７ 固定手段
８ 端子コネクター
９ 導電性の底板
２１，４１，４２，４３ 突出部
２２，５３ ぎざぎざ
５２ 蓋板側の端子
６１ 制御用の端子
７１ 固定手段用の貫通部【Technical field】
[0001]
The invention relates to the field of power electronics. The present invention relates to a power semiconductor module based on the general concept of claim 1.
[Background Art]
[0002]
Semiconductor modules of the so-called "hockey puck" type are, for example, semiconductor modules which are used in the form of a stack of modules, the module usually having the shape of a hockey puck, i.e. two essentially parallel It has a cylindrical shape with a bottom face facing. These bottom surfaces are configured to conduct electricity and are connected to the output electrode or main electrode (emitter, collector) of the semiconductor, while the side walls between the bottom surfaces are configured to insulate electricity. . In a stack having a plurality of modules connected in series, a heat sink is respectively arranged between the two modules in the main current path. For control and monitoring of these power semiconductor components, control terminals (gates) and auxiliary terminals (auxiliary emitters) are respectively drawn from the module container. In a conventional "hockey puck" type module, these terminals consist of protruding pins, the auxiliary terminals being soldered on one bottom (emitter).
[0003]
These pins can easily break under force. Similarly, the soldered location may be damaged. Furthermore, the inductance between the pin-shaped connection terminals is relatively large.
[0004]
A semiconductor module having a semiconductor circuit consisting of an IGBT in an electrically insulated container is known from US Pat. Two output terminals are connected to the main electrode of the IGBT and are drawn out from the module container through the side wall. These output terminals are basically configured as flat plates, and these flat plates are separated by one insulating layer and arranged in parallel with each other. The control terminals of the IGBT are drawn from the module through another part of the side wall.
[Patent Document 1]
European Patent Publication No. 772235 [Disclosure of the Invention]
[Problems to be solved by the invention]
[0005]
It is an object of the present invention to provide a power semiconductor module of the above-mentioned type, which is improved with respect to the stability of the connection terminals and the inductance between the connection terminals.
[Means for Solving the Problems]
[0006]
This problem is solved by a power semiconductor module having the features of claim 1.
[0007]
The gist of the present invention is that two terminals of a power semiconductor circuit drawn from a module container are arranged on opposing surfaces of a printed circuit board (PCB) drawn from the module container. Is fixed to the lid plate by force with fixing means, so that the terminal on the lid plate side arranged between the substrate and the lid plate is joined to the lid plate in a conductive manner. This means that the fixing means is preferably arranged in the area of the joint.
[0008]
As a result, these terminals have reduced inductance and improved stability. Furthermore, optimal electrical connection between the lid plate and the terminal on the lid plate side is guaranteed.
[0009]
Advantageously, these cover plates and / or the terminals on the cover plate side are jagged in the area of the joint. This further improves the electrical connection. As a result, a reliable power connection terminal can be realized for a longer period even under fluctuating conditions (temperature and humidity).
[0010]
In another advantageous embodiment of the power semiconductor module according to the invention, the cover plate and the substrate each have at least two projections. The projections of the lid plate and the substrate are respectively arranged in an overlapping manner, and the fixing means are arranged in the area of these projections. Furthermore, the substrate has at least one further protrusion between these two protrusions.
[0011]
Two projections on the lid plate are provided to protect this further projection of the substrate from impact. This further projection is advantageously configured in an essentially rectangular shape so that its terminals can be connected using conventional connectors.
BEST MODE FOR CARRYING OUT THE INVENTION
[0012]
Hereinafter, the present invention will be described in detail based on embodiments illustrated in the drawings.
[0013]
In all drawings, the same reference numerals correspond to components having the same functions.
[0014]
The power semiconductor module in FIG. 1 has a power semiconductor circuit 1 including two power semiconductors. The function and configuration of the power semiconductor circuit are arbitrary and are not relevant to the present invention. For example, a mode in which a plurality of semiconductor components of sub-modules that can be manufactured in advance are assembled is also possible.
[0015]
The power semiconductor circuit 1 is stored in a module container which basically consists of a conductive lid plate 2, a conductive bottom plate 9, and an insulating container wall 3 arranged therebetween.
[0016]
The output terminal or main terminal of the power semiconductor circuit 1 is electrically connected to a conductive lid plate and a bottom plate like a conventional “hockey puck” type module.
[0017]
A control signal for a power semiconductor, for example, a gate control signal for an IGBT (insulated gate bipolar transistor) is drawn from the container via a bus and a control terminal conductor 6.
[0018]
In the present invention, the control terminal conductor 6 is disposed on one surface of the substrate 4 whose both surfaces are metal-coated. On another surface of the substrate, there is a terminal conductor 5 on the lid plate side, which is joined to the lid plate 2 in an electrically conductive manner.
[0019]
FIG. 2 shows a power semiconductor module according to the present invention in a top view.
[0020]
Between the container wall 3 and the cover plate 2, a substrate 4 metal-coated on both sides is disposed. On the upper side facing the cover plate, there is a terminal conductor 5 on the cover plate side. On the lower side facing the container wall, there are two control terminal conductors 6.
[0021]
The cover plate 2 has two protrusions 21 protruding from the edge of the module container. As is evident from FIG. 3, this substrate has two corresponding projections 41 arranged below the projections 21 of the lid plate. These projections 21 and 41 are connected by a fixing means 7, for example a stud or a screw. As a result, a conductive bond is formed between the terminal conductor 51 on the lid plate side disposed above the substrate and the lid plate. A knurl 22 (a knurled surface) is formed below the projection 21 of the lid plate. The electrical connection can be improved by pressing the jagged ends up to a few hundred μm in length against the metallization of the substrate.
[0022]
The substrate has another protrusion 42 between the two protrusions 41. The protrusion 42 is for mounting the connector 8 as is apparent from FIG. The connector 8 is pushed into the protrusion 42 in the direction of the arrow. The contact portions arranged in the connector are pressed against the terminals 52 and 61 arranged on both sides of the board 4. As the connector, a conventional board connector can be used.
[0023]
The protruding portion 42 is protected from an impact from above and from the side by the protruding portion 21 of the lid plate.
[0024]
5 and 6 show another embodiment of the substrate having only one control terminal 61. FIG. Further, in the area of the penetrating portion 71 for the fixing means, a notch 53 of the terminal conductor 51 on the lid plate side is formed. The knurled surface can improve the electrical connection with the lid plate.
[0025]
This substrate has another protruding portion 43 having a function as a connection terminal with a control bus inside the module container. A vertical connecting part (not shown here) connects the control terminal conductor 62 to the bus bar. In addition to the penetrating part 71 formed in the protruding part 21, another penetrating part for fixing means can be provided.
[0026]
In addition to the illustrated embodiment, it is conceivable to use a plurality of protrusions arranged side by side for a plurality of connectors. In this case, a projection of the lid plate for protecting each projection can be provided between the connectors.
[0027]
It is further conceivable to provide one or more control terminals for each protruding part of the substrate.
[0028]
In particular, embodiments are conceivable in which each conductor layer has a three-layer or multi-layer substrate with at least one terminal.
[Brief description of the drawings]
[0029]
1 shows a power semiconductor module according to the invention with a cover plate and a substrate. FIG. 2 shows a partial view of the power semiconductor module of FIG. 1 with a cover plate and a substrate according to the first embodiment. FIG. 4 is a cross-sectional view of the power semiconductor module of FIG. 2 taken along the line III-III. FIG. 4 is a cross-sectional view of the power semiconductor module of FIG. 2 taken along the line IV-IV. FIG. FIG. 6 is a view of the substrate of FIG. 5 viewed from below.
[0030]
REFERENCE SIGNS LIST 1 power semiconductor circuit 2 conductive lid plate, emitter plate 3 insulating container wall 4 insulating substrate 5, 51 terminal conductor 6 on lid plate side, control terminal conductor 7 fixing means 8 terminal connector 9 conductivity Bottom plate 21, 41, 42, 43 projecting portion 22, 53 jagged 52 terminal 61 on cover plate side terminal 71 for control penetration portion for fixing means
Claims (4)
一方の端子が蓋板と、他方の端子が底板と電気を導電する形で接続された少なくとも二つの出力端子を有する、このモジュール容器内に収容された電力半導体回路（１）、ならびに、
このモジュール容器から引き出された、この電力半導体回路の少なくとも二つの端子（５，５２；６，６１）であって、これらの少なくとも二つの端子（５，５２）の中の第一の端子が蓋板（２）との接続端子として配備された少なくとも二つの端子（５，５２；６，６１）、
を有する電力半導体モジュールにおいて、
基本的に平らに形成された基板（４）が、モジュール容器から引き出されており、その際この基板（４）は、少なくとも二層の構造を持ち、上記の二つの端子は、この基板（４）の導体（５，６）として構成されるとともに、これらの導体（５，６）は、基板（４）の底面と基本的に平行に配置されること、ならびに、
この基板（４）が、固定手段（７）により力で締め付ける形で蓋板（２）に固定され、その結果蓋板に面する側に配置された蓋板側の端子導体（５）が、電気を伝導する形で蓋板と接合されること、
を特徴とする電力半導体モジュール。A conductive lid plate (2), a conductive bottom plate (9) arranged essentially parallel to the lid plate, and an insulating container wall (9) disposed between the lid plate and the bottom plate; Module container with 3),
A power semiconductor circuit (1) housed in the module container, one terminal having a lid plate and the other terminal having at least two output terminals electrically connected to the bottom plate; and
At least two terminals (5, 52; 6, 61) of the power semiconductor circuit drawn from the module container, the first terminal of the at least two terminals (5, 52) being a lid. At least two terminals (5, 52; 6, 61) arranged as connection terminals with the plate (2),
In a power semiconductor module having
An essentially flat substrate (4) is pulled out of the module container, the substrate (4) having at least a two-layer structure, the two terminals being connected to the substrate (4). ), The conductors (5, 6) being arranged essentially parallel to the bottom surface of the substrate (4);
The substrate (4) is fixed to the cover plate (2) in a form to be tightened by force by the fixing means (7). As a result, the terminal conductor (5) on the cover plate side arranged on the side facing the cover plate is Being joined to the lid plate in a conductive manner,
A power semiconductor module characterized by the above-mentioned.
これらの蓋板（２１）と基板（４１）それぞれの一つの突出部が、互いに重なり合う形で配置されること、
前記の固定手段（７）が、これらの突出部（２１，４１）の区域に配置されること、
この基板（４）が、これら二つの突出部（４１）の間に、少なくとも一つの別の突出部（４２）を有すること、ならびに、
前記の端子（５２，６１）が、この別の突出部（４２）上に配置されること、
を特徴とする請求項１から３までのいずれか一つに記載の電力半導体モジュール。Said lid plate (2) and substrate (4) each having at least two projections (21);
One protruding portion of each of the lid plate (21) and the substrate (41) is arranged so as to overlap each other;
Said fixing means (7) are arranged in the area of these projections (21, 41);
The substrate (4) has at least one further protrusion (42) between the two protrusions (41); and
Said terminals (52, 61) being arranged on this further projection (42);
The power semiconductor module according to any one of claims 1 to 3, wherein:
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01113344A EP1263046A1 (en) | 2001-06-01 | 2001-06-01 | Contact Arrangement |
| PCT/CH2002/000284 WO2002097885A1 (en) | 2001-06-01 | 2002-05-30 | Contact system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004527919A true JP2004527919A (en) | 2004-09-09 |
| JP4266814B2 JP4266814B2 (en) | 2009-05-20 |
Family
ID=8177604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003500969A Expired - Lifetime JP4266814B2 (en) | 2001-06-01 | 2002-05-30 | Connection terminal structure |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6856012B2 (en) |
| EP (2) | EP1263046A1 (en) |
| JP (1) | JP4266814B2 (en) |
| CN (1) | CN100511677C (en) |
| DE (1) | DE50214290D1 (en) |
| RU (1) | RU2302686C2 (en) |
| WO (1) | WO2002097885A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013048239A (en) * | 2011-08-17 | 2013-03-07 | Abb Technology Ag | Press pin, power semiconductor module, and semiconductor module assembly with multiple power semiconductor modules |
| JP2014531133A (en) * | 2011-10-21 | 2014-11-20 | アーベーベーテクノロジーアクチエンゲゼルシャフトＡＢＢ Ｔｅｃｈｎｏｌｏｇｙ ＡＧ | Power semiconductor module and power semiconductor module assembly comprising a plurality of power semiconductor modules |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10316356B4 (en) * | 2003-04-10 | 2012-07-26 | Semikron Elektronik Gmbh & Co. Kg | Modular power semiconductor module |
| JP2004357384A (en) * | 2003-05-28 | 2004-12-16 | Toyoda Mach Works Ltd | Switching element mounting structure to heat sink |
| RU180437U1 (en) * | 2017-10-31 | 2018-06-14 | Акционерное Общество "Специальное Конструкторско-Технологическое Бюро По Релейной Технике" (Ао "Сктб Рт") | POWER MODULE |
| RU2699759C1 (en) * | 2018-10-10 | 2019-09-10 | Владимир Анатольевич Петров | Electrical equipment unit |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3406528A1 (en) * | 1984-02-23 | 1985-08-29 | Brown, Boveri & Cie Ag, 6800 Mannheim | PERFORMANCE SEMICONDUCTOR MODULE |
| US4748495A (en) * | 1985-08-08 | 1988-05-31 | Dypax Systems Corporation | High density multi-chip interconnection and cooling package |
| US5579217A (en) * | 1991-07-10 | 1996-11-26 | Kenetech Windpower, Inc. | Laminated bus assembly and coupling apparatus for a high power electrical switching converter |
| DE19530264A1 (en) * | 1995-08-17 | 1997-02-20 | Abb Management Ag | Power semiconductor module |
| JP3396566B2 (en) * | 1995-10-25 | 2003-04-14 | 三菱電機株式会社 | Semiconductor device |
| DE19603224A1 (en) * | 1996-01-30 | 1997-07-31 | Wolfgang Dipl Ing Schuster | Power semiconductor mechanical apparatus for e.g. power switch or rectifier |
| JP3674333B2 (en) * | 1998-09-11 | 2005-07-20 | 株式会社日立製作所 | Power semiconductor module and electric motor drive system using the same |
-
2001
- 2001-06-01 EP EP01113344A patent/EP1263046A1/en not_active Withdrawn
-
2002
- 2002-05-30 WO PCT/CH2002/000284 patent/WO2002097885A1/en active Application Filing
- 2002-05-30 US US10/479,216 patent/US6856012B2/en not_active Expired - Lifetime
- 2002-05-30 EP EP02727149A patent/EP1393375B1/en not_active Expired - Lifetime
- 2002-05-30 DE DE50214290T patent/DE50214290D1/en not_active Expired - Lifetime
- 2002-05-30 CN CNB028109104A patent/CN100511677C/en not_active Expired - Lifetime
- 2002-05-30 RU RU2003137843/28A patent/RU2302686C2/en active
- 2002-05-30 JP JP2003500969A patent/JP4266814B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013048239A (en) * | 2011-08-17 | 2013-03-07 | Abb Technology Ag | Press pin, power semiconductor module, and semiconductor module assembly with multiple power semiconductor modules |
| JP2014531133A (en) * | 2011-10-21 | 2014-11-20 | アーベーベーテクノロジーアクチエンゲゼルシャフトＡＢＢ Ｔｅｃｈｎｏｌｏｇｙ ＡＧ | Power semiconductor module and power semiconductor module assembly comprising a plurality of power semiconductor modules |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2002097885A1 (en) | 2002-12-05 |
| US6856012B2 (en) | 2005-02-15 |
| JP4266814B2 (en) | 2009-05-20 |
| RU2302686C2 (en) | 2007-07-10 |
| US20040145050A1 (en) | 2004-07-29 |
| EP1393375A1 (en) | 2004-03-03 |
| EP1393375B1 (en) | 2010-03-17 |
| CN1513207A (en) | 2004-07-14 |
| CN100511677C (en) | 2009-07-08 |
| RU2003137843A (en) | 2005-02-27 |
| EP1263046A1 (en) | 2002-12-04 |
| DE50214290D1 (en) | 2010-04-29 |
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