JP2004357037A - High frequency switch module and radio telephone terminal using the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high frequency switch module in which interference in terms of RF (radio frequency) between an external component and a branching filter circuit hardly occurs and parasitic capacity due to the mounting pad of the external component hardly arises. <P>SOLUTION: A high frequency switch module 2 has a multilayer body 80 in which conductor layers M1 to M11 and dielectric layers D1 and D11 which form the branching filter circuit are alternately stacked, wherein a portion of an area of the main surface of the outermost dielectric layer D11 is made to be a mounting space for the external component 42IC of a high frequency circuit. The mounting space is covered with a mounting base surface conductor MG1, and the external component 42IC is arranged on the mounting base surface conductor MG1. In addition, the other surface conductors MG2 and MG3 are arranged in the multilayer body 80 so that the surface conductors MG2 and MG3 are separated from the mounting base surface conductor MG1 by interposing two or more of dielectric layers D1 to D11. A mounting pad PD for connecting a terminal TM of the external component 42IC side is arranged on the main surface of the outermost dielectric layer D11 aside from the mounting base surface conductor MG1. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a high-frequency switch module used for a wireless telephone terminal and a wireless telephone terminal using the same. The wireless telephone terminal to which the present invention is applied means any device that performs two-way communication using a wireless telephone network, and has a general meaning such as a mobile phone or a PHS (Personal Handy phone System). Wireless telephones, of course, portable terminal devices such as telephones with built-in terminal functions and portable computers with telephone line connection functions, modems for wireless telephone line connection, and portable computers with such modems. Is also included as a concept.
[0002]
[Prior art]
[Patent Document 1]
JP-A-2000-165274
[Patent Document 2]
JP 2000-278168 A
[0003]
In the above-described wireless telephone terminal, for example, a digital cellular phone, a high-frequency switch is used to switch between the connection between the antenna and the transmission circuit and the connection between the antenna and the reception circuit. In particular, in recent years, the number of spreads of digital mobile phones has rapidly increased, and new types of communication standards have been set and adopted one after another. With the increase in the number of subscriber lines, the frequency of radio waves to be used has been expanded from the initial several hundred MHz band to the GHz band, and various communication wave number bands (bands) are allocated according to communication systems. .
[0004]
The communication system of the digital mobile phone is different depending on the communication company or country or region. Naturally, it is inconvenient for a user who frequently travels back and forth between regions with different communication systems to carry around a number of telephones corresponding to each system. Since different communication systems may coexist, there is also a desire for the same user to use different communication systems to take advantage of each communication system. Therefore, in order to meet such needs, a multi-band telephone capable of handling a plurality of transmission / reception systems of different bands with one telephone has been developed and is becoming popular. Such a multi-band telephone is provided with a demultiplexer (diplexer) for separating a received signal into a high-frequency side received signal and a low-frequency side received signal. The reception signal is switched between transmission and reception in a time division manner by independent switch circuits.
[0005]
Conventionally, a switch circuit using a PIN diode has been used for an antenna switch of a mobile phone (Patent Document 1), but a coil or a capacitor forming a bias circuit for driving the switch is required around the PIN diode. However, there is a disadvantage that the circuit becomes complicated. Also, at the time of reverse bias, there is a problem that the isolation characteristic of the PIN diode is easily damaged as the communication frequency increases. Therefore, a high-frequency switch module has been proposed in which this switch circuit is replaced with a GaAs switch having a simple structure and good isolation characteristics (Patent Document 2).
[0006]
[Problems to be solved by the invention]
In the high-frequency switch module of Patent Document 2, in order to prevent RF-like interference between a GaAs switch and a filter or a directional coupler provided in an inner layer of the laminated body, a dielectric layer a is provided immediately below a GaAs switch mounting surface of the laminated body. The ground electrode Gp1 (Gazette FIG. 4 (b)) is arranged with (Gazette FIG. 4 (a)) interposed therebetween. The ground electrode is formed so as to substantially cover the GaAs switch mounting surface on the dielectric layer a, and a wiring pattern Lp that is electrically connected to the terminal of the GaAs switch is formed on the dielectric layer a. It is apparent from comparison of FIGS. 4A and 4B that the wiring pattern Lp has a projection overlap with the ground electrode Gp1 one layer below. .
[0007]
If the wiring pattern Lp conducting to the GaAs switch overlaps with the ground electrode Gp1, a parasitic capacitive coupling occurs between the two via the dielectric layer a. Since this parasitic capacitance is shunted between the ground electrode Gp1 and the signal transmission path opened and closed by the switch, if the capacitance is excessively large, the signal that has passed through the filter of the demultiplexing circuit will be lost. This leads to adverse effects such as attenuation.
[0008]
An object of the present invention is to incorporate a branching circuit into a laminate of a dielectric layer and a conductor layer, and to surface-mount other external components of a switch circuit, such as a high-frequency transistor, on the surface of the laminate. A high-frequency switch module having a structure, which is unlikely to cause RF interference between the external component and the demultiplexing circuit inside the laminate, and in which parasitic capacitance due to connection pads of the external component is unlikely to occur; And a wireless telephone terminal used.
[0009]
[Means for Solving the Problems and Functions / Effects]
In order to solve the above problems, the high-frequency switch module of the present invention is used by connecting to an antenna, an antenna-side input / output terminal shared for input and output of an antenna reception signal and an antenna transmission signal,
A branching circuit that is connected to the antenna-side input / output terminal and branches a reception signal received via the antenna into a high-band reception signal and a low-band reception signal;
A reception output terminal for outputting the separated high-frequency side reception signal and low-frequency side reception signal to the reception circuit side of the wireless telephone communication device, and a transmission input for receiving a transmission signal from the transmission circuit of the wireless telephone communication device A high-frequency circuit having a terminal and a switch circuit for switching connection to the antenna-side input / output terminal;
In a laminate in which the conductor layers and the dielectric layers are alternately laminated, an inner layer pattern that forms at least a part of the branching circuit is formed in the conductor layer, and on the main surface of the outermost dielectric layer of the laminate, External components forming a part of the high-frequency circuit are mounted, and an antenna-side input / output terminal and a reception output terminal and a transmission input terminal of the switch circuit are formed on the surface of the laminate,
A first-layer surface conductor used as a ground layer or a power supply layer is formed on the conductor layer disposed on the main surface of the outermost dielectric layer of the multilayer body, and external components are connected to the first-layer conductor. A second type surface conductor that forms another ground layer or a power supply layer, and is disposed inside the multilayer body with two or more dielectric layers separated from the first type surface conductor; On the main surface of the side dielectric layer, connection pads for connecting terminals on the external component side, apart from the first type surface conductor, are arranged in a form that forms part of the conductor layer. Features.
[0010]
Further, the wireless telephone terminal of the present invention includes an antenna connected to the antenna-side input / output terminal of the high-frequency switch module;
A receiving circuit connected to the receiving output terminal;
A transmission circuit connected to the transmission input terminal.
[0011]
In the present invention, a part of the main surface of the outermost dielectric layer of the laminated body in which the inner layer pattern of the branching circuit is formed is secured as a mounting space for external components of the high-frequency circuit. The mounting space is covered with a first-type surface conductor constituting a conductor layer, and an external component is arranged on the first-type surface conductor. On the other hand, the second-type surface conductor other than the first-type surface conductor is separated from the first-type surface conductor by two or more dielectric layers, and then, on the main surface of the outermost dielectric layer, the external component side Connection pads for connecting the terminals are arranged. Thereby, the RF-type interference between the demultiplexing circuit and the external component, which are formed in the inner layer of the laminate, is effectively suppressed by the interposition of the first type surface conductor on the outermost dielectric layer. Further, the connection pads for mounting external components are arranged on the same plane with little capacitive coupling with the first-type surface conductor, and another ground layer or power supply is provided below the first-type surface conductor. Since the second type surface conductors forming the layers are separated from each other by two or more dielectric layers, the capacitive coupling with these second type surface conductors is also small. Therefore, the parasitic capacitance component derived from the connection pad of the external component is suppressed to a low level, and the effect of preventing a problem such as signal attenuation after passing through the branching circuit is obtained.
[0012]
In the switch circuit, the switching element for switching can be constituted by a high-frequency compound semiconductor transistor, and the high-frequency compound semiconductor transistor can be arranged on a first-type surface conductor as an external component. The high-frequency compound semiconductor transistor can ensure good isolation characteristics in a wide frequency band of a high frequency band, and does not require a parallel resonator, a peripheral capacitor or a coil for forming a bias circuit, which was essential for a PIN diode switch circuit. is there. Accordingly, the configuration of the switch circuit is greatly simplified, and the need for an external coil or an inner layer on the substrate is eliminated, so that the switch circuit can be made compact and high isolation characteristics can be ensured over the entire communication frequency band. . By arranging the switch element on the first-type surface conductor, a signal passing through the transistor becomes noise and reaches the demultiplexing circuit in the laminate, or a leakage signal component from the demultiplexing circuit becomes a transistor. It is possible to effectively suppress an operation defect due to RF interference, such as a noise in a signal passing through the transistor or a malfunction of a transistor. Further, since the parasitic capacitance component derived from the connection pad of the external component is suppressed to a low level, the high gain characteristic or the high isolation characteristic peculiar to the high frequency compound semiconductor transistor can be more effectively utilized.
[0013]
The high-frequency compound semiconductor transistor can be specifically composed of a compound semiconductor field-effect transistor. For example, GaAs-based field-effect transistors include GaAs-based MESFETs (Metal-Semiconductor Field Effect Transistors) and HEMTs (High-Electron Mobility Transistors). When used, both low noise and high gain of a high frequency transmission / reception signal to be passed when ON is conducted can be achieved, and the isolation characteristics when OFF is cut off are extremely high. A GaAs-based MESFET is also easy to integrate a plurality of elements by a monolithic IC process (for example, MMIC (Monolithic Microwave Integrated Circuit), and is effective for miniaturization of a circuit. On the other hand, a GaAs-based HEMT is a GaAs-based compound semiconductor ( This is a kind of field-effect transistor that uses a quantum two-dimensional electron gas layer formed by a heterojunction of AlGaAs and InGaAs (including AlGaAs and InGaAs) as a current channel, and has extremely high electron mobility. There is a feature that the index is very small and the gain is high (for example, noise figure at 12 GHz: 0.41 dB, gain: 13 dB) .As other devices, HBT (Heterobipolar Transistor) is adopted. It is also possible.
[0014]
In this case, the switch circuit that switches between the high-frequency switch circuit for handling the high-frequency received signal and the low-frequency switch circuit for handling the low-frequency received signal is a high-frequency switch element. The structure can be a compound semiconductor transistor. The high-frequency compound semiconductor transistor is disposed on a first-type surface conductor as an external component. By configuring both the high-frequency switch circuit and the low-frequency switch circuit with high-frequency compound semiconductor transistors, the switch circuit can be made more compact and high isolation characteristics can be ensured over the entire communication frequency band. More enhanced.
[0015]
On the other hand, the switch circuit includes a high-frequency switch circuit for handling the high-frequency reception signal, a switch element for performing the switching using a PIN diode, and a low-frequency switch circuit for handling the low-frequency reception signal. The switching element for switching may be configured by a high-frequency compound semiconductor transistor, and the high-frequency compound semiconductor transistor may be arranged as an external component on a first-type surface conductor. Applying a high-frequency compound semiconductor transistor to the low-frequency switch circuit greatly simplifies the switch configuration and eliminates the need for external coils and inner layers on the board, making the low-frequency switch circuit more compact. Can be achieved. On the other hand, since the high-frequency side switch circuit has a high signal frequency, the use of a high-frequency compound semiconductor transistor with a low impedance during conduction as a switching element increases power consumption and easily generates heat in the switch section. May need to be strengthened. Therefore, by configuring the high-frequency side switch circuit as a PIN diode switch circuit, it is possible to reduce power consumption and suppress heat generation. In addition, the use of the expensive high-frequency compound semiconductor transistor is limited to the low-frequency side switch circuit, whereby the entire high-frequency switch module can be configured at low cost.
[0016]
When the external component is surface-mounted in the high-frequency switch module of the present invention, a part of the first-type surface conductor may be cut out, and the connection pad may be arranged in the cutout region. On the other hand, if the connection pads are arranged on the main surface of the laminate outside the first type surface conductor and the terminal on the external component side and the connection pads are wire-bonded, the first type surface conductor And the distance between the connection pad and the connection pad can be increased, and the parasitic capacitive coupling between the two can be further reduced.
[0017]
The first type surface conductor can be a ground layer for grounding the attenuation path of the stopband signal component of the filter included in the branching circuit. When a first-type surface conductor is used as a ground layer and a large parasitic capacitance is generated between the ground conductor and the connection pad, the parasitic capacitance is changed to a signal transmission path opened and closed by the ground layer and a switch, as in Patent Document 2. Is inserted in a shunt-like manner, which leads to an adverse effect such as signal attenuation (and a decrease in filter gain). However, by adopting the present invention, the parasitic capacitance formed between the connection pad and the first-type surface conductor is greatly reduced, so that the first-type surface conductor can be used as a ground layer for a filter. In addition, it is possible to effectively suppress a decrease in filter gain and the like.
[0018]
Next, the laminate can be configured to include a plurality of capacitors. Among those capacitors, those whose capacitor electrodes are located outside the area directly below the first-type surface conductor are referred to as first-type capacitors, and whose capacitor electrodes overlap the area directly below the first-type surface conductor. Is a second type capacitor. In this case, if the capacitor of the filter included in the demultiplexing circuit is formed as a first-type capacitor on a conductor layer located below the outermost dielectric layer, the electrode of the capacitor and the first-type surface conductor , The parasitic capacitive coupling between the uppermost dielectric layer and the outermost dielectric layer is less likely to occur, and filter characteristics such as suppression of attenuation of a signal passing through the filter can be improved. In particular, a non-grounded capacitor (non-grounded type capacitor) arranged on a signal passing path of the filter, when coupled with a parasitic capacitance formed on the ground side, causes not only a decrease in gain but also a fluctuation factor of a cutoff frequency. Therefore, there is a possibility that the demultiplexing characteristics of the received signal itself may be affected. Therefore, if the non-grounded capacitor is used as the first type capacitor, such a problem can be effectively prevented. On the other hand, the filter capacitor may include a grounded capacitor in which one electrode is grounded. However, since the capacitor can absorb a parasitic capacitance between the ground layer (or power supply layer), the second type capacitor is used. By forming as, it contributes to the reduction of the area of the laminate.
[0019]
On the other hand, in the laminate, a coil constituting a filter can be formed in a conductor layer located below the outermost dielectric layer. In this case, it is desirable to dispose the coil so as to be farther from the second type surface conductor in the thickness direction of the laminate than the capacitor of the filter. According to this structure, by arranging the coil of the filter away from the second type surface conductor, mutual induction between the coil and the second type surface conductor is suppressed, and a decrease in the inductance of the coil due to the mutual induction can be prevented. Therefore, a coil having the same inductance can be formed with a short line length, which contributes to a reduction in the area of the laminate. By arranging the capacitor using the space formed between the coil and the second type surface conductor, the space in the laminate can be more effectively utilized, and the overall size of the laminate can be reduced. In addition, when the coil forms a part of the resonance circuit for the purpose of steepening the filter characteristics, if the distance between the coil and the second type surface conductor is increased, the resonance Q value can be increased. As a result, the filter characteristics can be improved. In the above configuration, if one electrode of the grounded capacitor among the capacitors of the filter is also used as the second type surface conductor, it further contributes to the miniaturization of the laminate.
[0020]
Next, since the first type capacitor hardly generates a parasitic capacitance between the first type capacitor and the first type surface conductor, one of the electrodes of the first type capacitor is formed on the conductor layer located immediately below the outermost dielectric layer. can do. Thereby, the total thickness of the dielectric layer inserted between the first-type capacitor and the first-type capacitor can be reduced, which contributes to a reduction in the height of the antenna switch module.
[0021]
In addition, on the main surface of the outermost dielectric layer, the area immediately above the electrode forming the first-type capacitor must be a free area in which the first-type surface conductor is not formed. As long as the parasitic capacitance between them does not become excessive, a part of the connection pad (for example, 10% or less of the total area of the plurality of connection pads: FIG. 4 of Patent Document 2) corresponds to the connection pad. 50% or more of the entire area of the wiring electrode Lp overlaps with the ground electrode Gp1), and the space on the main surface of the outermost dielectric layer can be effectively used.
[0022]
On the other hand, when the electrode of the capacitor of the filter included in the demultiplexing circuit is formed on the conductor layer located below the outermost dielectric layer, the electrode of the capacitor is formed in a region directly below the first type surface conductor. While being configured as a second type capacitor that causes overlap, two or more dielectric layers can be arranged to be separated from the first type surface conductor. Even in the case where the electrode of the capacitor and the first type surface conductor are overlapped, if two or more dielectric layers are interposed between the first type surface conductor, the capacitor electrode and the first type surface conductor may be overlapped. The parasitic capacitance coupling with the seed surface conductor is relatively small, and the influence on the filter characteristics can be reduced. Further, by arranging the electrode of the capacitor and the first-type surface conductor in an overlapping manner, the space in the in-plane direction of the laminate can be effectively used, and the high-frequency switch module can be made compact. In this case, if the capacitor on the ground path that branches from the passing signal path of the filter to the ground side is a second-class capacitor, even if some parasitic capacitance is generated, this parasitic capacitance is a regular capacitor on the ground path. The influence can be relatively easily designed and absorbed by adjusting the electrode area of a regular capacitor. The second type capacitor and the first type surface conductor may be arranged so that the electrode of the second type capacitor is farther from the first type surface conductor in the thickness direction of the laminated body than the electrode of the first type capacitor. It is more desirable from the viewpoint of reducing the parasitic capacitive coupling with the capacitor.
[0023]
In the laminate, a coil constituting a filter can be formed in a conductor layer located below the outermost dielectric layer. In this case, it is desirable that the coil is arranged with two or more dielectric layers separated from the first-type surface conductor while overlapping with the region immediately below the first-type surface conductor. The coil, unlike the capacitor, requires a long line pattern for securing the inductance, and a substantial arrangement space in the plane of the laminate is large. Therefore, it is more advantageous from the viewpoint of space saving to arrange the first-type surface conductor over the first-type surface conductor than to arrange the first-type surface conductor in an area-avoided manner. In this case, the occurrence of parasitic capacitance can be suppressed by interposing two or more dielectric layers between the coil and the first type surface conductor. From the viewpoint of further reducing the parasitic capacitive coupling between the coil and the first type surface conductor, the coil is arranged so as to be farther from the first type surface conductor in the thickness direction of the laminate than the electrode of the first type capacitor. It is desirable to arrange. The fact that the coil is arranged to overlap the first-type surface conductor in the plane means that the overlapping area with the electrode of the first-type capacitor is reduced. Is also unlikely to occur.
[0024]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a block diagram illustrating an electrical configuration of a quad-band digital mobile phone (hereinafter, also simply referred to as a mobile phone), which is an example of a wireless telephone terminal that handles a plurality of frequency bands. The mobile phone 1 has an input / output interface 11 and a control microprocessor 10 as a main control unit composed of a CPU 12, a ROM 13, a RAM 14, and the like connected thereto. , An on-hook / off-hook switch 6 for switching the mobile phone 1 between an on-hook state and an off-hook state, and a band switch 7 for switching a communication frequency band. In the present embodiment, it is possible to switch between four communication systems of EGSM (first system), GSM850 (second system), PCS (third system) and DCS (fourth system).
[0025]
The receiver 3 is connected via an amplifier 15 and a D / A converter 16, the transmitter 4 is connected via an amplifier 17 and an A / D converter 18, and a liquid crystal monitor (LCD) 19 is connected via a monitor control circuit 20. , Respectively, are connected to the input / output interface 11. The telephone connection circuit 9 is connected to the input / output interface 11. The telephone connection circuit 9 includes a first modulator 32A for EGSM, a first transmitter 33A, a first receiver 35A and a first demodulator 36A, a second modulator 32B for GSM850, a second transmitter 33B, One receiving unit 35B and first demodulating unit 36B, third modulating unit 32C for PCS, third transmitting unit 33C, third receiving unit 35C and third demodulating unit 36C, fourth modulating unit 32D for DCS, fourth transmitting Unit 33D, a fourth receiving unit 35D and a fourth demodulating unit 36D, a frequency synthesizer 34 for synthesizing a communication carrier at a required frequency, a high-frequency signal processing circuit 2 according to an embodiment of the present invention, and an antenna 39 connected thereto. A reception signal belonging to a terminal reception band in each communication frequency band is extracted from a demultiplexed reception signal divided into each band through a demultiplexing circuit 44 (FIG. 2: described later) included in the high-frequency signal processing circuit 2. Terminal receiver Band extracting band pass filter circuit 40A, 40B, 40C, configured to include a 40D or the like. Although not shown, the telephone connection circuit 9 also includes a control radio wave transmitter for handover.
[0026]
The components other than the high-frequency switch module 2 among the components of the telephone connection circuit 9 are well-known and are not different from general digital mobile phones, and therefore detailed description is omitted. The basic operation of the mobile phone 1 is the same as that of the well-known one, but the outline is as follows. That is, the voice input from the transmitter 4 is amplified by the amplifier 17, and is further digitally converted by the A / D converter 18, and then modulated by the modulators (32 A to 32 D) corresponding to the selected communication frequency band. Then, the signal is further combined and amplified with a carrier by the transmission unit (33A or 33B) and transmitted from the high-frequency switch module 2 and the antenna 39. On the other hand, the received radio waves are received by the receivers (35A to 35DB) corresponding to the selected communication frequency band via the antenna 39 and the high-frequency switch module 2, and after the carrier component is removed, the demodulators (36A to 36D) Are demodulated into digital audio signals, and output from the receiver 3 via the D / A converter 16 and the amplifier 15.
[0027]
The high-frequency switch module 2 switches between a reception signal and a transmission signal in a time-division manner in response to switch control signals (VC1 to VC6 described later: signal control is performed by the control microprocessor 10). On the other hand, in the present embodiment, the switching of the communication frequency band is performed by the control microprocessor 10 by operating the band changeover switch 7. However, the band scan is performed using the frequency synthesizer 34, and the communication frequency band is automatically switched to the appropriate frequency band. Switching may be performed. Note that the switching process performed by the control microprocessor 10 is mainly a port switching process of the modulation units 32A to 32D and the demodulation units 36A to 36D in the input / output interface 11, a designated frequency switching process to the frequency synthesizer 34, and the like.
[0028]
Next, FIG. 2 is a block diagram illustrating an electrical configuration of the high-frequency switch module 2. The high-frequency switch module 2 is a high-frequency circuit used by being connected to the antenna 39 as described above. The high-frequency switch module 2 includes an antenna-side input / output terminal ANT used for input / output of an antenna reception signal and an antenna transmission signal, and an antenna-side input / output terminal. A branching circuit 44 connected to the terminal ANT and separating the reception signal received via the antenna 39 into a low-frequency reception signal (2) and a high-frequency reception signal (4) is provided. The low-frequency side reception signal (2) and the high-frequency side reception signal (4) demultiplexed by the demultiplexing circuit 44 are both demultiplexed signals each including a plurality of communication frequency bands. In the present embodiment, the low band side reception signal (2) is EGSM and GSM850, and the high band side reception signal (4) is DCS and PCS. A low-frequency side switch circuit 42A and a high-frequency side switch circuit 42B are provided on the output side of each demultiplexed signal.
[0029]
In FIG. 2, the low-frequency side received signal {circle around (2)} is demultiplexed and extracted by the low-pass filter 45, and the high-frequency side received signal {circle around (4)} by the high-pass filter 46. In the present embodiment, each of the low-pass filter 45 and the high-pass filter 46 is configured by an analog filter (here, an LC passive filter). The received signal of each terminal reception band from the demultiplexing circuit 44 is switched between the transmission signal of each terminal transmission band from each of the transmission units 33A to 33D toward the antenna 39 by the corresponding switch circuits 42A and 42B.
[0030]
FIG. 3 is a circuit diagram showing details of the high-frequency switch module 2. In the demultiplexing circuit 44, the low-pass filter 45 includes a passing signal path J that has a high impedance with respect to the cutoff high-frequency signal. _L The upper coil L106 and the low-impedance capacitor C108 inserted in parallel with this and short-circuiting the cutoff high-frequency signal to ground form a basic element. On the other hand, the high-pass filter 46 has a passing signal path J that has a high impedance with respect to the cutoff low-frequency signal. _H The upper capacitors C207 and C208 and the low-impedance coil L206 which is inserted in parallel and short-circuits the cut-off low-frequency signal to ground form basic elements.
[0031]
In the present embodiment, the low-pass filter 45 and the high-pass filter 46 of the demultiplexing circuit 44 short-circuit the cutoff signal region to ground in both the low-pass filter 45 and the high-pass filter 46 in order to sufficiently increase the attenuation characteristics. A coil L107 or a capacitor C209 which forms a series LC resonance circuit together with the capacitor C107 or the coil L206 as the basic element is inserted on the path. By inserting such a series LC resonance circuit, the filter attenuation characteristics can be sharpened. The resonance frequency needs to be adjusted by the values of the capacitance and the inductance of the capacitor C107 / coil L107 and the capacitor C209 / coil L206 of each series resonance circuit so that the position of the resonance pole is aligned near the frequency boundary to be separated. .
[0032]
Further, in the present embodiment, in order to further steepen the attenuation characteristic, a coil L106 constituting a high-frequency cutoff parallel LC resonance circuit is inserted together with the capacitor C108 on the passing signal path. The parallel LC resonance circuit functions to sharpen a pole generated on the pass band side of the filter transition region. It is necessary to adjust the resonance frequency based on the values of the capacitance and the inductance of the capacitor C108 and the coil L106 so that the position of the pole is aligned near the frequency boundary to be separated.
[0033]
The switch circuits 42A and 42B both switch between a transmission connection mode in which the transmission input terminal is connected to the antenna-side input / output terminal ANT and a reception connection mode in which the reception output terminal is connected to the antenna-side input / output terminal ANT. The switching is performed. The switch circuit 42A is for processing the low band side reception signal (2), and has a reception terminal R for EGSM. _X1 Terminal R for GSM850 _X2 , And a transmission terminal T shared by EGSM and GSM850 _X1 T _X2 Having. The switch circuit 42B is for processing the high-frequency side reception signal {circle around (4)}. _X3 , DCS receiving terminal R _X4 And the transmission terminal T shared by the PCS and DCS _X3 T _X4 And Note that, as shown in FIG. _X1 T _X2 , T _X3 T _X4 Are connected to transmission low-pass filter circuits 41A and 41B for removing transmission harmonics having a pass band including a terminal transmission band of two communication frequencies. In the present embodiment, these are provided so as to be externally attached to a laminated body 80 described later.
[0034]
The low-frequency side switch circuit 42A includes an antenna-side input / output unit ANT and a reception output terminal R _X1 , Reception output terminal R _X2 And transmission input terminal T _X1 T _X2 Transistors Tr1, Tr2, Tr3 each composed of a GaAs MESFET with a drain and a source connected to each other are provided on each path connecting the transistors Tr1, Tr2, Tr3. Entered individually. VC1, VC2 and VC3 are binary control signals, and in the transmission connection mode, the transmission input terminal T _X1 T _X2 , The input states of VC1, VC2, and VC3 are controlled such that only the transistor Tr3 corresponding to. In the transmission connection mode, the reception output terminal R _X1 And reception output terminal R _X2 The input states of VC1, VC2, and VC3 are controlled such that the transistor Tr1 or the transistor Tr2 corresponding to one of them is selectively turned on, and the other is turned off.
[0035]
The high-frequency switch circuit 42B includes an antenna-side input / output unit ANT and a reception output terminal R. _X3 , Reception output terminal R _X4 And transmission input terminal T _X3 T _X4 Transistors Tr4, Tr5 and Tr6 each composed of a GaAs-based MESFET with a drain and a source connected to each other are connected to each other, and switch control signals VC4, VC5 and VC6 are connected to the gates of the transistors Tr4, Tr5 and Tr6. Entered individually. VC4, VC5 and VC6 are binary control signals, and in the transmission connection mode, the transmission input terminal T _X3 T _X4 , The input states of VC4, VC5, and VC6 are controlled so that only the transistor Tr6 corresponding to. In the transmission connection mode, the reception output terminal R _X3 And reception output terminal R _X4 The input states of VC4, VC5, and VC6 are controlled such that the transistor Tr4 or the transistor Tr5 corresponding to one of them is selectively turned on and the other is turned off.
[0036]
Since only one of the four communication frequency bands shared by the switch circuits 42A and 42B is selected for transmission and reception, the switch circuits not involved in transmission and reception are switched so that all transistors are turned off. The input state of the control signal is controlled.
[0037]
2, the terminal reception band extraction band-pass filter circuits 40A (for EGSM: pass band 880 to 960 MHz), 40B (for GSM 850: pass band 824 to 894 MHz), 40C (for PCS: pass band 1850 to 1990 MHz), 40D (For DCS: pass band 1710 to 1880 MHz) _X1 , R _X2 , R _X3 , R _X4 In this embodiment, each is configured as a narrow band filter circuit (a so-called SAW filter) including a surface acoustic wave resonator.
[0038]
It should be noted that, of the switch circuits 42A and 42B of FIG. 3, one provided at least on the output side of the high-frequency side reception signal (4) of the demultiplexing circuit 44 (42A), and in the present embodiment, the high-frequency side reception signal (4) The transmission input terminals T (42A, 42B) provided on the output side of both the low-frequency side reception signal and the low-frequency side reception signal (2) _X1 T _X2 And T _X3 T _X4 Are configured as a single terminal shared in two communication frequency bands handled by the switch circuits 42A and 42B. As shown in FIG. 1, each transmission input terminal T _X1 T _X2 , T _X3 T _X4 The transmission signal is input through the high-frequency low-noise amplifiers 21 and 22.
[0039]
The high-frequency switch module 2 in FIG. 2 has a laminate 80 in which conductor layers M1 to M11 and dielectric layers D1 to D11 are alternately laminated, as shown in FIG. The laminate 80 has conductor layers M1 to M11, and among these, the conductor layers M1 to M10 form a part of a high-frequency circuit, specifically, a laminate circuit pattern of the branching circuit 44. The conductor layers M1 to M11 are coupled in the layer thickness direction by vias VA formed in the dielectric layers D1 to D11. The dielectric layer is made of, for example, a ceramic such as a glass ceramic made of lead borosilicate glass and alumina. The laminate 80 is manufactured by a method in which a circuit pattern of the conductor layers M1 to M11 is printed on a ceramic green sheet, which is a raw material of a dielectric layer, using a conductive paste to form a thick film, laminated, and fired.
[0040]
In the laminate 80, a part of the main surface of the outermost dielectric layer D11 is secured as a mounting space for the external component 42IC of the high-frequency circuit. In the present embodiment, the external component 42IC is a GaAs-based IC switch that integrates the high-frequency compound semiconductor transistors Tr1 to Tr6 and constitutes the switching element of the first and second switch circuits 42A and 42B (hereinafter, referred to as IC). Switch 42IC). FIG. 5 is a plan view of the stacked body 80 on the outermost dielectric layer (D11) side. FIG. 6 is a plan view showing a conductor arrangement layout of each of the conductor layers M1 to M11. As shown in FIG. 6, on the main surface of the outermost dielectric layer D11, the mounting space for the IC switch 42IC is covered with a first-type surface conductor MG1 constituting the conductor layer M11. An IC switch 42IC, which is an external component, is arranged on the surface conductor MG1.
[0041]
On the main surface of the outermost dielectric layer D11, a connection pad PD for connecting a terminal on the side of the IC switch 42IC (external component) is provided separately from the first surface conductor MG1. It is arranged so as to form a part of M11. In the present embodiment, the connection pad PD is arranged on the main surface outside the first-type surface conductor MG1, and as shown in FIG. 4, the terminal TM on the IC switch 42IC (external component) side and the connection TM The pad PD is wire-bonded with the gold wire 50. As shown in FIG. 5, an antenna-side input / output terminal ANT and an input / output terminal for transmission / reception (R _X1 , R _X2 , T _X1 T _X2 , R _X3 , R _X4 , T _X3 T _X4 ), A plurality of ground terminals GND, and ON / OFF control terminals CTL1, CTL2, and CTL3 of the switch circuits 42A and 42B (a required setting state of VC1 to VC6 in FIG. 2 is created by a combination of these input states). Have been. In FIG. 2, each input / output terminal R _X1 , R _X2 , T _X1 T _X2 , R _X3 , R _X4 , T _X3 T _X4 Are externally provided with DC cut capacitors C3, C4, C5, C6, C7, and C8.
[0042]
FIG. 18 is an enlarged circuit diagram of the branching circuit 44, and the symbols of the electrodes formed in the conductor layers M1 to M11 of the multilayer body 80 are also shown for each capacitor. Then, in the conductor arrangement layout of the conductor layers M1 to M11 shown in FIGS. Also, the coil patterns are drawn with the corresponding reference numerals for the respective coils. Symbols VPA and VPB indicate via pads, and the filled-in via pad VPA indicates that a via connection is made to the upper layer conductor, and the outlined white pad pad VPB indicates that the via pad is connected to the lower layer conductor. In each of the conductor layers M1 to M4, terminal pads TPA and TPB are formed along the periphery. The terminal pad TPA indicated by solid color indicates that the via is connected to the upper conductor, and the terminal pad TPB indicated by white indicates that the via is connected to the lower conductor. As shown in FIG. 4, the terminal pads TPA and TPB corresponding to each other are electrically integrated by a terminal connecting conductor 81 formed over each layer on the side surface of the laminate 80 as shown in FIG. , Each terminal ANT, R in FIG. _X1 , R _X2 , T _X1 T _X2 , R _X3 , R _X4 , T _X3 T _X4 , GND and CTL1 to CTL3.
[0043]
The following is a supplementary explanation. The mounting base surface conductor MG1 of the conductor layer M11 (FIG. 6) is connected to the corresponding connection pad PD via the line conductor LN. In consideration of the fact that each via pad and terminal pad indicated by reference numeral F1 in FIGS. 6 to 16 are conductively connected by vias, the first-type surface conductor MG1 is the second-type surface conductor MG1 shown in FIGS. It can be seen that the plane conductors MG2 and MG3 are electrically connected. Since the terminal pad F1 in FIGS. 14 and 16 is electrically connected to the ground terminal GND in correspondence with FIG. 5, the first-type surface conductor MG1 is separated from the second-type surface conductors MG2 and MG3 by the demultiplexing. It can also be seen that the ground layer of the circuit 44 is formed. The ground layer is for grounding the short-circuit paths RL and RH of the cutoff signal of the filters 45 and 46 included in the branching circuit 44 in FIG. As is clear from the above configuration, the second type surface conductors MG2 and MG3 forming a ground layer other than the first type surface conductor MG1 are separated from the first type surface conductor MG1 by two or more dielectric layers D4 to D11. Have been separated.
[0044]
The interposition of the first-type surface conductor MG1 effectively suppresses the RF interference between the branching circuit 44 formed in the laminated body 80 and the IC switch 42IC as an external component. Further, a connection pad PD for mounting the IC switch 42IC is arranged on the main surface of the outermost dielectric layer D11, but the same surface as the first-type surface conductor MG1 has less capacitive coupling. The second type surface conductors MG2 and MG3, which constitute other ground layers, are arranged above and separated from each other by two or more dielectric layers D4 to D11 below the first type surface conductor MG1. Therefore, the capacitive coupling with the second type surface conductors MG2 and MG3 is also small. Therefore, the parasitic capacitance component derived from the connection pad PD is suppressed low, and the gains of the filters 45 and 46 are hardly affected.
[0045]
In FIG. 18, among the capacitors of the filters 45 and 46 included in the demultiplexing circuit 44, the non-grounded capacitors C207 and C208 which are the main part of the high-pass filter 46 and are arranged on the passing signal path JH are shown in FIG. As shown in FIGS. 8 and 9, the electrodes E4DB ′, E4DA + E4DB, and E1D + E4DA (see FIG. 18) move from the region directly below the first-type surface conductor MG1 (indicated by broken lines in FIGS. 7 to 13). It is located at a position off and is a first-class capacitor. In the present embodiment, since the electrodes E4DA and E4DB of the capacitors C207 and C208 in FIG. 18 are always at the same potential, they are formed as an integral electrode E4DA + E4DB as shown in FIG.
[0046]
Also, in FIG. 18, the capacitor C108 which is disposed on the passing signal path JL of the low-pass filter 45 and constitutes the portion C of the high frequency cutoff parallel LC resonance circuit has the electrodes E1D and E1D ′. As shown in FIG. 10, these electrodes E1D and E1D ′ are also arranged at positions outside the region immediately below the first-type surface conductor MG1, forming a first-type capacitor. In the present embodiment, in FIG. 18, the electrode E1D of the capacitor C108 is always at the same potential as the electrode E4DA 'of the capacitor C208 on the high-pass filter 46 side. Therefore, as shown in FIG. 9, both electrodes are integrated as an electrode E1D + E4DA'. Is formed.
[0047]
When the capacitors C207 and C208 of the high-pass filter 46 overlap with the first-type surface conductor MG1, as shown in FIG. 18, a parasitic capacitance CV3 is inserted in parallel with the capacitors C207 and C208 on the ground side. As a result, the impedance of the reception signal on the high frequency side to be passed is reduced, and the filter gain is reduced. However, by avoiding the overlap with the first type surface conductor MG1 as described above, such a problem can be effectively suppressed.
[0048]
On the other hand, the capacitor C108 of the low-pass filter 45 forms a portion C of the parallel LC resonance circuit for sharpening the pole at the end of the passband. If the capacitor C108 overlaps with the first-type surface conductor MG1, as shown in FIG. 18, a parasitic capacitance CV2 appears in parallel with the ground side, so that the resonance frequency shifts. As a result, there is a concern that the steepness of the attenuation characteristic is impaired. However, if the overlap with the first type surface conductor MG1 is avoided as described above, such a problem can be effectively suppressed. In addition, since the influence of the capacitive coupling with the first type surface conductor MG1 is larger on the capacitor C108 side of the low-pass filter 45 for which the resonance frequency needs to be controlled, in the present embodiment, as shown in FIG. The electrode E1D 'of the capacitor C108 is arranged farther away from the first-type surface conductor MG1 in the thickness direction of the laminate than the electrodes E4DB', E4DA, E4DB, E4DA of the capacitors C207, C208 of the high-pass filter 46.
[0049]
Note that the electrode E4DB 'of the capacitor C208 of the high-pass filter 46 is arranged in a region immediately below the first-type surface conductor MG1. In the present embodiment, in order to further reduce the parasitic capacitance coupling in the layer thickness direction between the electrode E4DB ′ and the first-type surface conductor MG1, the outermost dielectric layer D11 is set to be smaller than the other dielectric layers D1 to D10. It is formed thick.
[0050]
Next, in FIG. 18, the coils L106, L107, L206 constituting the filters 45, 46 are formed on the conductor layers M6, M5, as shown in FIGS. Each of these coils L106, L107, L206 overlaps with the area immediately below the first type surface conductor G1, but is separated from the first type surface conductor G1 by two or more dielectric layers D7 to D11. The parasitic capacitance coupling with the first type surface conductor G1 is suppressed. In the present embodiment, as shown in FIG. 4, these coils L106, L107, and L206 are arranged farther away from the first-type surface conductor MG1 in the thickness direction of the laminate than the above-mentioned first-type capacitors C208, C207, and C108. Thus, the effect of reducing the parasitic capacitance between the first surface conductor G1 is further enhanced. In particular, as shown in FIG. 18, the parasitic capacitance CV2 of the coil L106 constituting the parallel LC resonance circuit of the low-pass filter 45 requiring the steepening of the attenuation characteristic is generated in the same manner as the capacitor C108. It is effective to increase the distance between the first surface conductor G1 and the first type surface conductor G1. Also for the series LC resonance circuits on the ground short-circuit paths RL and RH, controlling the resonance frequency is important from the viewpoint of sharpening the resonance pole. As shown in FIG. 18, in the coils L107 and L206 forming the resonance circuit, the parasitic capacitances CV1 and CV4 generated by the connection with the first surface conductor MG1 are coupled in parallel with the capacitors C107 and C209 forming the resonance circuit. Therefore, increasing the distance between the coils L107 and L206 and the first type surface conductor G1 is also effective in controlling the resonance frequency.
[0051]
In this embodiment, since the capacitors C107 and C209 constituting the above-described series LC resonance circuit are both short-circuited to the ground as shown in FIG. As shown, it is formed by sandwiching the electrodes E2D and E5D between the two second type surface conductors MG2 and MG3 forming the ground layer. In other words, the second type surface conductors MG2 and MG3 also serve as the electrodes of the capacitors C107 and C209, thereby contributing to the compactness of the laminate 80 and the high-frequency switch module 2. In addition, since the second type surface conductors MG2 and MG3 oppose both surfaces of the electrodes E2D and E5D, a capacitor having a relatively large capacity is realized even if the area is small, and the effect of downsizing is further enhanced. Further, as shown in FIG. 4, the second type surface conductors MG2 and MG3 are arranged so as to be farther from the first type surface conductor G1 than the coils L106, L107 and L206 in the thickness direction of the laminated body. And the connection pad PD, almost no parasitic capacitance is formed. In the present embodiment, as apparent from a comparison between FIG. 6 and FIG. 7, only one (indicated by reference numeral F2) of the plurality of connection pads PD is the first type capacitor C207. It is arranged in a region immediately above the electrode E4DB '. Since the connection pad PD is electrically connected to the electrode E4DB 'via the via, there is no fear that a parasitic capacitance is generated between the connection pad PD and the electrode E4DB'. In other words, in the high-frequency switch module 2 of the present embodiment, the connection pad PD is electrically connected to the second type surface conductor, the line conductor, the capacitor electrode, or the coil pattern and the via included in the conductor layer M11 immediately below. Except for the conductive type (F2), the second type surface conductor, the line conductor, the capacitor electrode, and the coil pattern are arranged in a positional relationship that does not cause overlap.
[0052]
In the high-frequency switch module 2 described above, the low-frequency switch circuit 42A and the high-frequency switch circuit 42B are both configured by IC switches, but at least one of them may be configured by a diode switch. it can. FIG. 17 shows an example in which the high-frequency side switch circuit 42B is configured as a diode switch (only the high-frequency side switch circuit 42B is taken out and the rest is exactly the same as FIG. 3). Specifically, each terminal R _X3 , R _X4 , T _X3 T _X4 Are provided with switching diodes D1, D2, D3 each composed of a PIN diode. Of these, terminal R _X4 , A diode D2 is inserted as a shunt-type switching element and the other terminal R _X3 , T _X3 T _X4 , Diodes D1 and D3 are inserted as series-type switching elements.
[0053]
Each terminal R _X3 , R _X4 , T _X3 T _X4 Switch control paths U1, U2, and U3 are provided in such a manner as to branch from the signal path to the ground to the ground side. Each terminal R into which diodes D1 and D3 are inserted as a series switch element _X3 , T _X3 T _X4 Are provided with DC bias application switch terminals VC4 and VC6, respectively. Between the switch terminals VC4 and VC6 and ground, a bias capacitor that prevents short-circuiting of bias DC and allows AC passage. C1 and C2 are inserted. Choke coils L1 and L3 are inserted between the diodes D1 and D3 and the switch terminals VC4 and VC6.
[0054]
On the other hand, a terminal R into which a diode D2 is inserted as a shunt-type switching element _X4 As for the DC bias, a bias resistor R1 for applying a DC bias is provided branching to the ground side, and a bias capacitor C2 for preventing a short circuit of the bias DC and ground and permitting the passage of AC is inserted in parallel with the bias resistor R1. You. The bias voltage applied to the diode D2 is increased by the presence of the bias resistor R1. _X3 , T _X4 T _X4 It is controlled in conjunction with the bias voltage applied to the switch terminals VC4 and VC6 on the side. Note that the coil L2 inserted on the anode side of the diode D2 on the signal path is for forming a series LC resonance circuit with the bias capacitor C2.
[0055]
The operation of the diode switch forming the high-frequency side switch circuit 42B is as follows. Terminal R _X3 Is turned on, the DC bias voltage to the switch terminal VC4 is set to a threshold value or more in the forward direction, and the DC bias voltage to the switch terminal VC6 is set to a value less than the threshold value. Then, the diode D1 becomes an ON bias to lower the impedance, and the terminal R _X3 Signal passing to the side is allowed. On the other hand, terminal R _X4 On the side, a forward direct current bias from the switch terminal VC4 side is applied to the diode D2, and similarly becomes an ON bias, so that the signal is short-circuited to the ground via the low-impedance diode D2 of the switch control path U2. Therefore, the terminal R _X4 Does not show a signal. Also, terminal T _X3 T _X4 On the side, the diode D3 becomes an OFF bias and generates a capacitance, thereby increasing the impedance, so that no signal appears.
[0056]
On the other hand, terminal T _X3 T _X4 If it is desired to turn on the side, the DC bias voltage to the switch terminal VC6 may be set to a threshold value or more, and the switch terminal VC4 may be set to less than the threshold value. Also, terminal R _X4 When it is desired to turn on the side, the DC bias voltages to the switch terminals VC4 and VC6 are both set to be less than the threshold. As a result, the diode D2 becomes OFF-biased and the switch control path U2 on the ground side has a high impedance. _X4 Signal passing to the side is allowed. Further, since the diodes D1 and D2 are both OFF-biased, the terminal R _X3 , T _X3 T _X4 Does not show a signal.
[0057]
When the diode D1 or D3 has an ON bias, the bias capacitor C2 provided on the switch control path U2 side and the coil L2 form a series LC resonance circuit, so that the switch control path U2 is short-circuited to ground in a desired frequency band. Of the diode D1 or the terminal R3 of the diode D3 _X4 Isolation characteristics for the signal path on the side are further improved. Further, for the diodes D1 and D3 constituting the series-type switch element, in order to further enhance the isolation characteristics, the diodes D1 and D3 are combined with the capacitance when the diodes D1 and D3 are OFF to form a parallel LC resonance circuit. Provided are coils L301 and L302, and capacitors C301 and C302 for preventing a short circuit of DC bias to diodes D1 and D3.
[0058]
The low-frequency side switch circuit 42A is configured as an IC switch similar to that of FIG. 1, and is disposed on the first-type surface conductor MG1 of the multilayer body 80 similar to that of FIG. Further, at least a part of the coils L1 to L3 or the capacitors C1 to C3 of the high-frequency side switch circuit 42B is formed in an inner layer on the conductor layer of the multilayer body 80. The diodes D1 to D3 are mounted on the main surface of the uppermost dielectric layer D11 of the multilayer body 80 as external components. At this time, these diodes D1 to D3 may be arranged on the first-type surface conductor MG1 together with the IC switch forming the high-frequency side switch circuit 42A.
[0059]
Further, in the above-described embodiment, the external components arranged on the first-type surface conductor MG1 are, besides the above-described IC switch and diode, a capacitor having a relatively large capacitance that is not formed in the laminate 80 and a large inductance. It is also possible to use a coil, or a narrow band filter element such as a SAW filter constituting the bandpass filters 40A, 40B, 40C, and 40D for extracting the terminal reception band. Further, in the above embodiment, an example of application to a quad-band mobile phone has been described. However, the present invention can be applied to other mobile phones having a different number of bands, such as a triple-band mobile phone.
[Brief description of the drawings]
FIG. 1 is a block diagram showing an overall configuration of a mobile phone showing one embodiment of a wireless telephone terminal of the present invention.
FIG. 2 is a block diagram of the high-frequency switch module.
FIG. 3 is a circuit diagram showing details of the high-frequency switch module of FIG. 2 according to the first embodiment;
FIG. 4 is a schematic front sectional view showing an example of a laminate used for the high-frequency switch module of FIG. 2;
FIG. 5 is a plan view of FIG. 4;
FIG. 6 is an explanatory diagram showing a first conductor layer layout of the laminate.
FIG. 7 is an explanatory diagram showing a second conductor layer layout of the laminate.
FIG. 8 is an explanatory diagram showing a third conductor layer layout of the laminate.
FIG. 9 is an explanatory diagram showing a fourth conductor layer layout of the laminate.
FIG. 10 is an explanatory view showing a fifth conductor layer layout of the laminate.
FIG. 11 is an explanatory view showing a sixth conductor layer layout of the laminate.
FIG. 12 is an explanatory diagram showing a seventh conductor layer layout of the laminate.
FIG. 13 is an explanatory diagram showing an eighth conductor layer layout of the laminate.
FIG. 14 is an explanatory diagram showing a ninth conductor layer layout of the laminate.
FIG. 15 is an explanatory diagram showing a tenth conductor layer layout of the laminate.
FIG. 16 is an explanatory diagram showing an eleventh conductor layer layout of a laminate.
FIG. 17 is a circuit diagram showing details of the high-frequency switch module of FIG. 2 according to a second embodiment.
FIG. 18 is an enlarged view of a circuit of a branching circuit portion of the high-frequency switch module.
[Explanation of symbols]
1. Digital mobile phones (wireless telephone terminals)
2 High frequency switch module
32A to 32D modulation unit (transmission circuit)
33A to 33D transmission unit (transmission circuit)
35A to 35D receiving unit (receiving circuit)
36A to 36D demodulation unit (receiving circuit)
39 antenna
42A low frequency side switch circuit
D1, D2, D3 PIN diode
42B high frequency side switch circuit
Tr1 to Tr3, 51 GaAs MESFETs (high-frequency compound semiconductor transistors)
42IC IC switch (external parts)
44 demultiplexing circuit
45 Low-pass filter
46 High Pass Filter
80 laminate
T _X1 , R _X1 , T _X2 T _X3 , R _X2 , R _X3 , T _X4 R _X4 I / O terminal
ANT antenna input / output terminal
MG1 First-class surface conductor (ground layer)
Pad for PD connection
MG2, MG3 Type 2 surface conductor (ground layer)
D1 to D11 Dielectric layer
M1 to M11 conductor layer
D1 Top dielectric layer
C207, C208, C108 First class capacitors
L206, L106, L107 coil

Claims (12)

An antenna-side input / output terminal that is used by being connected to an antenna and is used for input / output of an antenna reception signal and an antenna transmission signal,
A branching circuit that is connected to the antenna-side input / output terminal and branches a reception signal received through the antenna into a high-band reception signal and a low-band reception signal.
A reception output terminal that outputs the split high-frequency side reception signal and the low-frequency side reception signal to a reception circuit side of the wireless telephone communication device, and a transmission signal from a transmission circuit of the wireless telephone communication device is input. A high-frequency circuit having a transmission input terminal and a switch circuit for switching connection to the antenna-side input / output terminal,
An inner layer pattern forming at least a part of the branching circuit is formed in the conductor layer in a laminate in which conductor layers and dielectric layers are alternately laminated, and the main surface of the outermost dielectric layer of the laminate is formed. External components forming a part of the high-frequency circuit are mounted, and the antenna-side input / output terminal and the reception output terminal and the transmission input terminal of the switch circuit are provided on the surface of the laminate. Formed,
A first-type surface conductor used as a ground layer or a power supply layer is formed on the conductor layer disposed on the main surface of the outermost surface dielectric layer of the laminate, and the external component is provided on the conductor layer. A second type surface conductor, which is arranged on the type 1 surface conductor and forms another ground layer or a power supply layer, is separated from the first type surface conductor by two or more dielectric layers inside the laminate. On the main surface of the outermost dielectric layer, a connection pad for connecting a terminal on the external component side, apart from the first-type surface conductor, is a part of the conductor layer. A high frequency switch module, wherein the high frequency switch module is arranged in the form of: The switch circuit, wherein the switching element for performing the switching is configured by a high-frequency compound semiconductor transistor, and the high-frequency compound semiconductor transistor is disposed on the first type surface conductor as the external component. 2. The high-frequency switch module according to 1. The said connection pad is arrange | positioned outside the said 1st surface conductor on the said main surface, The terminal of the said external component side and the said connection pad are wire-bonded. High frequency switch module. 4. The filter according to claim 1, wherein the first-type surface conductor forms a ground layer for grounding an attenuation path of a stopband signal component of a filter forming the branching circuit. 5. High frequency switch module. A plurality of capacitors are included in the laminate, and among these capacitors, a capacitor in which an electrode of the capacitor is disposed at a position deviated from a region immediately below the first type surface conductor is referred to as a first type capacitor. A capacitor of a filter included in the demultiplexing circuit, wherein a capacitor having an electrode overlapping with a region immediately below the first type surface conductor is a second type capacitor, and a conductor layer positioned below the outermost surface dielectric layer. The high-frequency switch module according to claim 4, wherein the high-frequency switch module is formed as the first type capacitor. The high-frequency switch module according to claim 5, wherein the first type capacitor is a non-grounded type capacitor. 7. The high-frequency switch module according to claim 5, wherein the capacitor of the filter includes a grounded capacitor having one electrode grounded, and the capacitor is formed as the second-type capacitor. 8. In the laminate, a coil constituting the filter is formed in a conductor layer located below the outermost dielectric layer, and the coil is disposed in a thickness direction of the laminate more than a capacitor of the filter. The high-frequency switch module according to claim 7, wherein the high-frequency switch module is arranged so as to be far from the second type surface conductor. 9. The high-frequency switch module according to claim 7, wherein one electrode of the ground-type capacitor among the capacitors of the filter is also used as the second type surface conductor. 10. The switch circuit includes a high-frequency switch circuit for handling the high-frequency reception signal and a low-frequency switch circuit for handling the low-frequency reception signal. The high-frequency switch according to any one of claims 2 to 9, wherein the high-frequency compound semiconductor transistor is configured on the first type surface conductor as the external component. module. The switch circuit includes a high-frequency switch circuit for handling the high-frequency reception signal, a switch element for performing the switching is configured by a PIN diode, and a low-frequency switch for handling the low-frequency reception signal. 3. The circuit according to claim 2, wherein the switching element for performing the switching is configured by a high-frequency compound semiconductor transistor, and the high-frequency compound semiconductor transistor is disposed on the first type surface conductor as the external component. 10. The high-frequency switch module according to any one of 9 above. A high-frequency switch module according to any one of claims 1 to 11,
An antenna connected to the antenna-side input / output terminal of the high-frequency switch module;
A receiving circuit connected to the reception output terminal;
And a transmission circuit connected to the transmission input terminal.

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