JP2004356141A - Semiconductor optical element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor optical element for which the effective band gap of an active layer can be controlled even under the condition of an element structure other than the active layer. <P>SOLUTION: This semiconductor optical element comprises a substrate, a buffer layer 12 formed on the substrate, and a first-conductivity first contact layer 13 formed on the buffer layer 12. This optical element also comprises a first-conductivity first clad layer 14 formed in a partial area on the contact layer 13, the active layer formed on the clad layer 14 so that an interacting parameter may contain 4,000 or more compounds, and a second-conductivity second clad layer 16 formed on the active layer. In addition, this optical element also comprises a second-conductivity second contact layer 17 formed on the clad layer 16, a first electrode provided on the first contact layer 13, and a second electrode provided on the second contact layer 17. The effective band gap of the active layer is controlled by adjusting the lattice mismatching of the active layer caused by the thickness or composition of the first or second clad layer 14 or 16 or the thickness of the second contact layer 17. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor optical element, and more particularly, to a semiconductor optical element having a strained active layer.
[0002]
[Prior art]
As a method of performing multicolor light emission using a light emitting diode (Light Emitting Diode, LED), a method using a phosphor is known. For example, a phosphor is applied around an LED that emits monochromatic light, and the phosphor emits light using the LED as an excitation light source, thereby extracting light having a wavelength different from the light emitted by the LED.
[0003]
A method using no phosphor has also been proposed. Two semiconductor chips that emit light of different wavelengths are stacked and fixed, and light emitted from both is controlled and mixed by current and voltage to extract, for example, white light. (For example, see Patent Document 1)
[0004]
[Patent Document 1]
Japanese Utility Model Registration No. 3076567
[Problems to be solved by the invention]
In the case of a semiconductor light emitting device, the emission wavelength is usually determined by the composition and thickness of the active layer (light emitting layer). But it is difficult to control them.
[0006]
An object of the present invention is to provide a semiconductor optical device capable of controlling the effective band gap of an active layer even under device structure conditions other than the active layer.
[0007]
[Means for Solving the Problems]
According to one aspect of the present invention, a substrate, a buffer layer formed on the substrate, a first contact layer of a first conductivity type formed on the buffer layer, A first cladding layer of a first conductivity type formed in a partial region of the first conductive layer, an active layer formed on the first cladding layer containing a compound having an interaction parameter of 4000 or more, A second cladding layer of a second conductivity type different from the first conductivity type formed on the layer, a second contact layer of a second conductivity type formed on the second cladding layer, A first electrode formed on the first contact layer, and a second electrode formed on the second contact layer, wherein the first clad layer or the second clad layer Thickness or composition, or the thickness of the second contact layer Jill, by adjusting the lattice mismatch of the active layer, a semiconductor optical element effective band gap of the active layer is controlled is provided.
[0008]
By controlling the thickness and composition of a layer other than the light emitting layer, the semiconductor optical element emits light having a wavelength different from the light emitting wavelength of the light emitting layer determined by the material forming the light emitting layer and the structure of the light emitting layer. A light emitting element is included.
[0009]
According to another aspect of the present invention, a first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type; An active layer having a quantum well structure formed between the second cladding layer, a second contact layer formed on the second cladding layer, and a connection formed to the first cladding layer; A first electrode and a second electrode connected to the second contact layer, wherein the first clad layer, the second clad layer, or the second contact layer is at least one of A plurality of regions having different thicknesses of the layers, wherein the active layer is a semiconductor optical element having a laminated structure having the same thickness, wherein the active layer corresponds to the plurality of regions having different thicknesses of the layers. The active layer has different emission peaks depending on the region. Is a semiconductor optical element having a different photosensitive wavelength provided.
[0010]
In this semiconductor optical element, the first clad layer, the second clad layer, or the second contact layer has a plurality of regions having at least one of different thicknesses. Different amounts of strain occur in the regions of the active layer corresponding to the regions, and the regions of the active layer have different emission peak emissions or different photosensitive wavelengths.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
For example, in a semiconductor light emitting device using a nitrogen compound crystal containing an In element as a light emitting layer, the state inside the light emitting layer has a great influence on light emission. For example, in the case of an LED having a quantum structure in which the light emitting layer has GaInN as a well layer, light is emitted from the light emitting layer in a spot shape. The fact that the light emission is in the form of a spot means that the GaInN crystal layer (light-emitting layer) having a high In composition has a composition fluctuation (a GaInN region having a high In composition and a GaInN region having a low In composition) because the GaN-InN has high immiscibility. This is considered to be caused by the occurrence of selective recombination of electrons and holes in the GaInN region having a high In composition (narrow band gap). If the carriers reach the GaInN region having a high In composition before the carriers are trapped by lattice defects, light is emitted with high quantum efficiency. If fluctuations with a high density and a high In composition can be produced, a semiconductor light emitting device that emits long-wavelength bright light could be manufactured.
[0012]
FIG. 1 is a table showing the interaction parameters of the compounds. In the table, the interaction parameters are shown in the unit “cal / mol”. The interaction parameter indicates the immiscibility of the compound, and a larger value indicates that the elements of the mixed crystal are less likely to intersect.
[0013]
It can be seen that compounds containing InN (GaN-InN and AlN-InN) have large interaction parameters (9223 cal / mol and 15340 cal / mol, respectively), that is, high immiscibility. Composition fluctuation is likely to occur in a compound having an interaction parameter of 4000 cal / mol or more.
[0014]
By supplying a large amount of the In elemental material, it is difficult to produce a high density and high In composition fluctuation. The inventor of the present application increased the difference in lattice constant between the light emitting layer of the semiconductor light emitting device and the cladding layer sandwiching the light emitting layer, and emphasized the immiscibility of GaN-InN, thereby increasing the fluctuation phenomenon of the In composition. A technique for increasing the emission wavelength of a semiconductor light emitting device was studied. The inventor of the present application added Si rather than growing a GaInN (GaInN: un) layer without adding an impurity as a well layer (light emitting layer) on an n-type GaN (GaN: Si) layer added with Si. If GaInN: un is grown on an n-type AlGaN (AlGaN: Si) layer, the lattice mismatch will increase, stress will be applied to GaInN, and the composition fluctuation of In will be more likely to occur. The following experiments were conducted to confirm the correctness of the idea, and a semiconductor light emitting device capable of emitting long-wavelength light having a GaInN well layer sandwiched between AlGaN cladding layers was manufactured.
[0015]
FIGS. 2A and 2B are schematic views showing a manufacturing process of an LED having a single quantum well.
[0016]
FIG. 2A is referred to. The sapphire substrate 11 is thermally annealed at 1000 ° C. for 10 minutes, and a buffer layer 12 made of GaN polycrystal (GaN: un) without adding impurities is grown on the sapphire substrate 11 at, for example, 550 ° C. Buffer layer 12 has a thickness of, for example, 20 nm. On the buffer layer 12, an n-type contact layer 13 made of GaN (GaN: Si) made n-type by adding Si is grown at, for example, 1030 ° C. to a thickness of 2 μm. On the n-type contact layer 13, AlGaN (Al ₀ ) having a lattice constant smaller than that of GaN having a composition ratio of Al and Ga of 1: 9 (Y _S1 = 0.1), which is made n-type by adding Si, is used. An n-type cladding layer 14 made of _.1 Ga _0.9 N: Si) is grown at, for example, 1030 ° C. to a thickness of 50 nm. On the n-type cladding layer 14, GaInN (Ga _0.8 In ₀ .0) having a composition ratio of In: Ga of 2: 8 (X _S1 = 0.2) and having a larger lattice constant than GaN to which no impurity is added _{. A} well layer 15 as a 2N (un) layer is formed at 750.degree. The thickness is, for example, 2.5 nm. The well layer 15 is an active layer (light emitting layer), and X _S1 = 0.2 indicates an average In composition in the GaInN layer. On the well layer 15, a p-type cladding layer 16, for example, having a composition ratio of Al and Ga of 1: 9 (Y _S1 = 0.1) and having a p-type by adding Mg, has a lattice constant higher than that of GaN. A 50 nm thick AlGaN (Al _0.1 Ga _0.9 N: Mg) layer is grown at 1000 ° C. On the p-type cladding layer 16, a p-type contact layer 17, for example, a p-type GaN (GaN: Mg) layer formed by adding Mg is grown at 1000 ° C. to a thickness of 250 nm.
[0017]
FIG. 2B is referred to. A part of the laminated structure shown in FIG. 2A is etched down to the n-type contact layer 13, and an n-side electrode 18 is formed on the exposed surface of the n-type contact layer 13 using an alloy of Ti and Al. Further, a p-side electrode 19 is formed on the surface of the p-type contact layer 17 using an alloy of Ni and Au to obtain an LED. This is called a first sample 21.
[0018]
When a voltage of 3.8 V was applied to the first sample 21 in the forward direction and a current of 20 mA was passed, and EL measurement was performed, EL light having an emission wavelength of 500 nm and an emission intensity of 1 cd was emitted.
[0019]
Next, second to sixth samples in which the layer thickness or the composition of the n-type cladding layer 14 or the p-type cladding layer 16 or the layer thickness of the p-type contact layer 17 were different from the first sample 21 were produced.
[0020]
FIG. 3 is a table comparing the emission wavelength and the peak intensity for the first to sixth samples. The peak intensity of each sample was normalized by the peak intensity of the first sample.
[0021]
Refer to the column for the second sample. The difference from the first sample 21 is that the thickness of each of the n-type cladding layer 14 and the p-type cladding layer 16 is 100 nm. Other configurations are the same as those of the first sample 21.
[0022]
A current of 20 mA was passed through the second sample in the forward direction, and EL measurement was performed. Emission having an emission wavelength of 510 nm and a peak intensity of 0.24 was observed.
[0023]
From this experimental result, it is confirmed that the emission peak shifts to a longer wavelength side when the thickness of the cladding layer having a smaller lattice constant than the lattice constant of the light emitting layer is increased. The lattice constant of the cladding layer approaches the underlying GaN: Si as the cladding layer becomes thinner, and approaches the original lattice constant of the cladding layer as the cladding layer becomes thicker. Therefore, it is considered that the thicker the clad layer, the larger the lattice mismatch between the clad layer and the well layer, the greater the fluctuation of the composition of InN in the well layer, and the longer the wavelength of emitted light.
[0024]
See the third and fourth sample columns. The third and fourth samples are LEDs in which the compositions of the n-type cladding layer 14 and the p-type cladding layer 16 are different from those of the second sample. In the third sample, the composition of both cladding layers is Y _S1 = 0.05, and in the fourth sample, Y _S1 = 0.15. Other configurations are equal to the second sample. The emission wavelength of the second sample, in which the composition of both cladding layers is Y _S1 = 0.1, was 510 nm, the emission wavelength of the third sample was 500 nm, and that of the fourth sample was 530 nm. Was. The peak intensity of the third sample was 0.9, and that of the fourth sample was 0.065.
[0025]
From this experimental result, it can be seen that the emission peak shifts to the longer wavelength side as the Al in the cladding layer increases. It is considered that as the Al content in the cladding layer increases, the lattice mismatch between the cladding layer and the well layer increases, and the composition fluctuation of InN in the well layer increases.
[0026]
See the fifth sample column. The difference from the first sample 21 is that the n-type cladding layer 14 is not formed (the thickness of the n-type cladding layer 14 is 0) and the well layer 15 is laminated on the n-type contact layer 13. It is. Other configurations are the same as those of the first sample 21.
[0027]
Refer to the column for the sixth sample. The difference from the fifth sample is the thickness of the p-type contact layer 17. That of the fifth sample is 250 nm, whereas that of the sixth sample is 100 nm.
[0028]
A current of 20 mA was applied to the fifth sample and the sixth sample in the forward direction to perform EL measurement. The emission wavelengths were 480 nm and 500 nm, respectively. The peak intensity of the fifth sample was 1.4, and that of the sixth sample was 0.56.
[0029]
It can be seen that when the p-type contact layer 17 is thin, the emission peak becomes longer. This is because, as the p-type contact layer 17 as the outermost surface layer becomes thinner, the strain to the well layer given by the cladding layer increases. Therefore, it is considered that as the p-type contact layer 17 becomes thinner, the fluctuation of the composition of InN in the well layer becomes larger and light is emitted in a narrow band gap portion, so that the emission wavelength becomes longer.
[0030]
The following can be seen from the table shown in FIG. First, even in an LED having the same well layer configuration, the wavelength of emitted light shifts to a longer wavelength side as the degree of lattice mismatch between the well layer and layers above and below the well layer is enhanced. Also, the emission wavelength shifts to a longer wavelength side by reducing the thickness of the p-type contact layer 17.
[0031]
The inventor of the present application has proposed (a) an LED in which a cladding layer formed above and below a well layer is formed by increasing the lattice constant difference from the well layer, and (b) only a cladding layer below the well layer. The emission wavelengths of the LED formed by increasing the lattice constant difference from the well layer and the LED formed by increasing the lattice constant difference between the well layer and the clad layer above the well layer are shown in FIG. Was examined. As a result, the emission wavelength was increased in the order of (a), (b), and (c).
[0032]
As described above, the emission wavelength of the LED can be controlled by controlling the amount of strain applied to the active layer (light emitting layer, well layer) of the LED.
[0033]
As a result of repeating the experiment by the inventor of the present invention, the Al composition of the n-type cladding layer 14 and the p-type cladding layer 16 in the LED having the same laminated structure as the first sample 21 shown in FIG. _S1 is changed in the range of 0 to 0.2, the thickness of both cladding layers is changed in the range of 0 to 100 nm, and the layer thickness of the p-type contact layer 17 is changed in the range of 10 to 500 nm. It was found that the emission wavelength could be changed in the range of 50 nm. Since the emission wavelength can be controlled by changing the growth conditions of the active layer itself, the range of the wavelength control can be broadened.
[0034]
In order to align the light emitting position with respect to the substrate, it is preferable to change the thickness of the layer above the light emitting layer (well layer), not the layer below the light emitting layer (well layer).
[0035]
FIGS. 4A to 4C are schematic views showing the steps of manufacturing the semiconductor light emitting device 31 according to the first embodiment.
[0036]
FIG. 4A is referred to. The stacked structure shown in FIG. 4A is exactly the same as the stacked structure shown in FIG. First, a stack structure exactly the same as the stack structure shown in FIG. 2A is manufactured by the same manufacturing process as that described with reference to FIG.
[0037]
Referring to FIG. Next, a part (peripheral portion) of the laminated structure shown in FIG. 4A is etched to the n-type contact layer 13. Further, a part of the p-type contact layer 17 is etched to divide the p-type contact layer 17 into two regions 17a and 17b having different thicknesses. The area ratio between the region 17a and the region 17b on the upper surface of the p-type contact layer 17 is, for example, 2: 1. The thickness of p-type contact layer 17 in region 17a is, for example, 100 nm, and the thickness in region 17b is, for example, 250 nm. Furthermore, an n-side electrode 18 is formed on the exposed surface of the n-type contact layer 13 with an alloy of Ti and Al, and a p-side electrode 19 is formed on the surface of the p-type contact layer 17 with an alloy of Ni and Au. Thus, the semiconductor light emitting device 31 is obtained.
[0038]
FIG. 4C is a cross-sectional view taken along line 4C-4C in FIG. 4B. In the well layer 15, a region located below the region 17a of the p-type contact layer 17 is defined as a region 15a, and a region located below the region 17b is defined as a region 15b.
[0039]
When a current of 20 mA was passed through the semiconductor light emitting device 31 in the forward direction and EL measurement was performed, a broad emission peak consisting of a blue light emitting region of 480 nm and a blue light emitting region of 500 nm was obtained. Also, as a result of the waveform separation calculation, when the peak intensity of the light of 480 nm was set to 1, the peak intensity of the light of 500 nm was 0.7. Observation of the emission image revealed that light having a peak intensity at 480 nm was emitted from the region 15b of the well layer 15 and light having a peak intensity at 500 nm was emitted from the region 15a of the well layer 15.
[0040]
The semiconductor light emitting device 31 is a semiconductor light emitting device that can control the emission color only by forming regions having different thicknesses in the p-type contact layer 17 by, for example, etching. By providing a plurality of regions having different layer thicknesses in the p-type contact layer 17, a plurality of light-emitting regions (different light-emitting regions) emitting light having different wavelengths correspond to the plurality of regions in the well layer 15 (light-emitting layer). (A plurality of regions having an effective band gap), and light emission having a peak intensity at a plurality of wavelength positions can be obtained.
[0041]
FIGS. 5A and 5B are schematic views of a semiconductor light emitting device 32 according to the second embodiment. The difference from the semiconductor light emitting element 31 shown in FIGS. 4B and 4C is that the two regions 17a and 17b of the p-type contact layer 17 having different layer thicknesses are electrically separated together with the layers below them. It is that you are.
[0042]
Referring to FIG. 4A is etched to the n-type contact layer 13 to divide the laminated structure from the n-type cladding layer 14 to the p-type contact layer 17 into two electrically separated regions. . Further, one of the separated p-type contact layers 17 is etched to divide the p-type contact layer 17 into two regions 17a and 17b having different thicknesses. The area ratio and the layer thickness of the two regions 17a and 17b are equal to those of the semiconductor light emitting element 31 described with reference to FIGS. 4B and 4C, for example. Further, p-side electrodes 19a and 19b are formed of an alloy of Ni and Au on the surfaces of the respective regions 17a and 17b of the p-type contact layer 17, and Ti and Al are formed on the exposed surface of the n-type contact layer 13. The n-side electrode 18 is formed of an alloy, and the semiconductor light emitting device 32 is obtained.
[0043]
FIG. 5B is a cross-sectional view taken along line 5B-5B in FIG. In the semiconductor light emitting device 32, a region 16a of the p-type cladding layer 16, a region 15a of the well layer 15, and a region 14a of the n-type cladding layer are formed below the region 17a of the p-type contact layer 17. Below the 17 region 17b, regions 16b, 15b, and 14b of each layer are formed.
[0044]
A current of 20 mA was applied to the semiconductor light emitting element 32 in the forward direction, and EL measurement was performed. When a voltage is applied between the n-side electrode 18 and the p-side electrode 19a and a current flows through the well layer 15a below the thinner region 17a of the p-type contact layer 17, a blue-green wavelength of 500 nm is obtained. Light emission was observed. When a voltage is applied between the n-side electrode 18 and the p-side electrode 19b and a current flows through the well layer 15b below the thicker region 17b of the p-type contact layer 17, a wavelength of 480 nm is obtained. Blue emission was observed. Assuming that the peak intensity of light emission is 1 when the peak intensity of light at 480 nm is 1, it is 0.6 at 500 nm. The reason why the peak intensity of the light having a wavelength of 500 nm is smaller than that of the semiconductor light emitting element 31 is that the two regions 17a and 17b of the p-type contact layer 17 having different thicknesses are electrically separated together with the underlying layers. This is probably due to etching damage when the sample is etched.
[0045]
Furthermore, when light was emitted simultaneously in the two regions 15a and 15b of the well layer 15, light emission having a broad emission peak having an emission peak consisting of a blue emission region with a wavelength of 480 nm and a blue-green emission region with a wavelength of 500 nm was obtained. . When the waveform separation calculation was performed, the peak intensity ratio between the light of 480 nm and the light of 500 nm was 1: 0.6.
[0046]
The semiconductor light emitting element 32 emits light from each region of the well layer 15 by forming regions having different thicknesses in the p-type contact layer 17 by, for example, etching and separating those regions and the well layer 15 therebelow. Monochromatic light and light obtained by synthesizing those monochromatic lights can be emitted. In the above example, two regions having different layer thicknesses are provided in the p-type contact layer 17 and two light emitting regions are formed in the well layer 15 corresponding to the regions having different layer thicknesses. A plurality of larger light emitting regions can be formed, and monochromatic light emitted from each light emitting region and light of a color obtained by arbitrarily combining these monochromatic lights can be emitted.
[0047]
FIGS. 6A and 6B are schematic diagrams of a semiconductor light emitting device 33 according to the third embodiment. In order to improve the color obtained by synthesizing monochromatic light emitted from the semiconductor light emitting element 32 shown in FIGS. 5A and 5B, red (R), green (G), A texture structure is adopted in which a small-area light emitting each single color of blue (B) is evenly distributed.
[0048]
FIG. 6A is a plan view of the semiconductor light emitting element 33. FIG. Although the figure shows a case where three red (R), green (G) and blue (B) light emitting regions are formed, the number of light emitting regions to be formed is arbitrary.
[0049]
FIG. 6B is a cross-sectional view taken along line 6B-6B in FIG. The layer thickness of the p-type contact region 17 located above each light-emitting region of the well layer 15 is adjusted by, for example, etching so that each light emission of red (R), green (G), and blue (B) is obtained. ing.
[0050]
In the first to third embodiments, light of a desired emission wavelength was obtained by controlling the thickness of the p-type contact layer 17 by etching. However, the p-type contact layer 17 or the n-type cladding layer 14 or By controlling the layer thickness of the p-type cladding layer 16 by, for example, selective etching or selective growth, a semiconductor light emitting device that can emit light of a desired wavelength can be manufactured. In order to simplify the manufacturing process, it is desirable to control the thickness of the uppermost p-type contact layer 17. As described above, by controlling the thickness of the layers other than the well layer 15 (light-emitting layer), semiconductor light-emitting elements having different emission wavelengths can be manufactured. Further, the emission wavelength can be controlled by changing the Al composition ratio of the n-type cladding layer 14 or the p-type cladding layer 16 instead of the layer thickness.
[0051]
In the first to third embodiments, the case where the well layer 15 (active layer, light emitting layer) is formed of GaInN has been described, but the material for forming the well layer 15 (active layer, light emitting layer) is as follows. Any material may be used as long as it is highly immiscible. It is desirable that the material has an interaction parameter of 4000 cal / mol or more.
[0052]
Furthermore, in the above description, it has been described that the emission wavelength from the light emitting layer (active layer) can be controlled by controlling the thickness or composition of the layers other than the light emitting layer (active layer) of the semiconductor light emitting element. This technical idea can also be applied to a semiconductor light receiving element from the viewpoint of controlling the effective band gap. The effective bandgap of the active layer changes due to the strain applied to the active layer, thereby changing the wavelength of emitted light in the case of a semiconductor light emitting element, and the photosensitive wavelength sensitive in receiving light in the case of a semiconductor light receiving element. The area changes.
[0053]
FIG. 7 shows a semiconductor light receiving element according to the fourth embodiment. FIG. 7A is a plan view of the semiconductor light receiving element 34, and FIG. 7B is a cross-sectional view taken along line 7B-7B of FIG. 7A. The structure of the semiconductor light receiving element 34 is the same as that of the semiconductor light emitting element 33 according to the third embodiment. The commonly used n-side electrode 18 and p-side electrodes 19a, 19b, 19c are connected to a logic circuit 40.
[0054]
When light having an arbitrary spectrum is incident on the semiconductor light receiving element 34, a current flows through each of the separated regions reflecting the spectrum. By measuring the current flowing between the electrodes, the spectrum and emission intensity distribution of the incident light can be measured.
[0055]
The semiconductor light-receiving element 34, like the semiconductor light-emitting element 33, is obtained by changing the element conditions (thickness or composition of the n-type or p-type cladding layer, or thickness of the p-type contact layer) other than the active layer. And a semiconductor light receiving element in which the effective band gap of the active layer is changed to adjust the photosensitive wavelength region. The active layer of the semiconductor light receiving element 34 is divided into a plurality of regions having different photosensitive wavelength regions (effective band gaps).
[0056]
The first sample 21 of the semiconductor light emitting device shown in FIG. 2B, the semiconductor light emitting device 31 shown in FIGS. 4B and 4C, and the semiconductor light emitting device shown in FIGS. 5A and 5B. The semiconductor light-receiving element corresponding to No. 32 can also adjust the photosensitive wavelength region by changing element conditions other than the active layer.
[0057]
Note that the n-type region and the p-type region in the embodiment may be inverted.
[0058]
As described above, the present invention has been described with reference to the examples. However, the present invention is not limited to these examples. For example, it will be apparent to those skilled in the art that various modifications, improvements, combinations, and the like can be made.
[0059]
【The invention's effect】
As described above, according to the present invention, it is possible to provide a semiconductor optical element that can control the effective band gap of the active layer even under element structure conditions other than the active layer.
[Brief description of the drawings]
FIG. 1 is a table showing the interaction parameters of the compounds.
FIGS. 2A and 2B are schematic diagrams showing a manufacturing process of an LED having a single quantum well.
FIG. 3 is a table comparing first to sixth samples.
FIGS. 4A to 4C are schematic diagrams illustrating a manufacturing process of the semiconductor light emitting device according to the first embodiment.
FIGS. 5A and 5B are schematic views of a semiconductor light emitting device according to a second embodiment.
6A is a plan view of the semiconductor light emitting element 33, and FIG. 6B is a cross-sectional view taken along line 6B-6B of FIG.
7A is a plan view of the semiconductor light receiving element 34, and FIG. 7B is a cross-sectional view taken along line 7B-7B of FIG.
[Explanation of symbols]
REFERENCE SIGNS LIST 11 sapphire substrate 12 buffer layer 13 n-type contact layer 14 n-type cladding layer 14 a, b region 15 well layer 15 a, b region 16 p-type cladding layer 16 a, b region 17 p-type contact layer 17 a, b region 18 n-side electrode 19 , 19a, b, cp p-side electrode 21 first sample 31, 32, 33 semiconductor light emitting element 34 semiconductor light receiving element 40 logic circuit

Claims (5)

Board and
A buffer layer formed on the substrate,
A first contact layer of a first conductivity type formed on the buffer layer;
A first conductive type first cladding layer formed in a partial region on the first contact layer;
An active layer formed on the first cladding layer and containing a compound having an interaction parameter of 4000 or more;
A second cladding layer formed on the active layer and having a second conductivity type different from the first conductivity type;
A second contact layer of a second conductivity type formed on the second cladding layer;
A first electrode formed on the first contact layer;
A second electrode formed on the second contact layer, and having a thickness or a composition of the first clad layer or the second clad layer, or a thickness of the second contact layer. A semiconductor optical element in which an effective band gap of the active layer is controlled by adjusting a generated lattice mismatch of the active layer. The first cladding layer or the second cladding layer or the second contact layer has a plurality of regions having different thicknesses in each layer, and the active layer corresponds to the plurality of regions having the different thicknesses. 2. The semiconductor optical device according to claim 1, wherein the semiconductor optical device is divided into a plurality of regions having different effective band gaps. 3. The active layer is formed of GaInN, the first cladding layer is formed of AlGaN doped with an n-type impurity, and the second cladding layer is formed of AlGaN doped with a p-type impurity. 3. The semiconductor optical element according to item 1. The thickness of the first and second cladding layer is 0 to 100 nm, the thickness of the second contact layer is 10 to 500 nm, Al composition _{Y S} of the first and second clad layers 4. The semiconductor optical device according to claim 3, wherein Y _S = 0 to 0.2. A first cladding layer of a first conductivity type and a second cladding layer of a second conductivity type different from the first conductivity type;
An active layer having a quantum well structure formed between the first cladding layer and the second cladding layer;
A second contact layer formed on the second cladding layer;
A first electrode connected to the first cladding layer and a second electrode connected to the second contact layer; the first cladding layer or the second cladding layer; The second contact layer is a semiconductor optical element having a laminated structure in which at least one of the layers has a plurality of regions having different thicknesses, and the active layer has the same thickness. A semiconductor optical element in which the active layer has light emission of different emission peaks or different photosensitive wavelengths corresponding to regions of the active layer corresponding to a plurality of different regions.

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