JP2004354294A - Pressure sensor - Google Patents

Pressure sensor Download PDF

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Publication number
JP2004354294A
JP2004354294A JP2003154274A JP2003154274A JP2004354294A JP 2004354294 A JP2004354294 A JP 2004354294A JP 2003154274 A JP2003154274 A JP 2003154274A JP 2003154274 A JP2003154274 A JP 2003154274A JP 2004354294 A JP2004354294 A JP 2004354294A
Authority
JP
Japan
Prior art keywords
pressure sensor
pipe set
semiconductor
temperature
thermistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003154274A
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Japanese (ja)
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JP2004354294A5 (en
Inventor
Masahide Hayashi
雅秀 林
Katsuhiko Kikuchi
勝彦 菊池
Hiromichi Ebine
広道 海老根
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Automotive Systems Engineering Co Ltd
Original Assignee
Hitachi Ltd
Hitachi Car Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
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Priority to JP2003154274A priority Critical patent/JP2004354294A/en
Publication of JP2004354294A publication Critical patent/JP2004354294A/en
Publication of JP2004354294A5 publication Critical patent/JP2004354294A5/ja
Pending legal-status Critical Current

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  • Pressure Sensors (AREA)
  • Measuring Fluid Pressure (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a miniaturized semiconductor pressure sensor having high temperature responsiveness and airtightness, capable of measuring also a temperature simultaneously. <P>SOLUTION: A thermistor 18 for temperature measurement and a terminal 8 for connection to the outside are welded and fixed beforehand on a pipe set 10, and while forming a connector 15 for connection to the outside and a fixing flange 23, the pipe set 10 is covered with a synthetic resin, to thereby form a storage case 14 of a semiconductor gage case set 1. The semiconductor gage case set 1 is welded on the terminal 8 for connection to the outside in the case 14, and an epoxy resin 17 for airtight sealing is filled and hardened, to thereby acquire this semiconductor pressure sensor. In the sensor, the number of components or the assembling man-hour can be greatly reduced, and the armoring case has a small-sized seamless structure. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は、圧力センサ、特には温度センサ一体型半導体圧力センサに関するものである。
【0002】
【従来の技術】
従来の圧力センサ端子部などの気密保持方法は、特許文献1に記載のように、金属リード材を有機樹脂材等でインサート成形した際、ゲルなどの保護部材を用いていて気密性を確保していた。しかし、各部材の線膨張係数差により、冷熱サイクルで各部界面に隙間が発生し、気密性が低下する問題があった。
【0003】
【特許文献1】
特開平11−304619号
【0004】
【発明が解決しようとする課題】
本発明が解決する課題は、被測定媒体の圧力変化と被測定媒体の温度変化を電気信号に変換する温度センサを兼ね備えた半導体圧力センサにおいて、端子,金属リードからの気密性低下を防止することにある。
【0005】
【課題を解決するための手段】
被測定媒体の圧力変化と被測定媒体の温度変化を電気信号に変換する温度センサを兼ね備えた半導体圧力センサにおいて、パイプ組を合成樹脂で一体成形した後、パイプ組と半導体圧力センサ収納ケース隙間と金属ターミナル及び、金属端子隙間の気密封止用として合成樹脂と線膨張係数が近似したエポキシ樹脂を充填固定することで、気密性を確保することが可能となる。
【0006】
【発明の実施の形態】
以下、図1〜図6を用いて、本発明の一実施例により、半導体圧力センサの構成に付いて説明する。最初に図1及び図2を用いて、本発明の一実施形態による半導体圧力センサのセンサ組の構成に付いて説明する。図1は、本発明の一実施形態による半導体圧力センサの構成を示す断面図である。図2は、図1の、本発明の平面図である。図3は、図1の、後外観図である。
【0007】
図4,図5は、本発明のパイプ組の断面図である。図6は、図5の平面図である。
【0008】
まず、図4,図5のパイプ組10の構成はターミナル11をインサートして、合成樹脂でモールド成形する。形状は圧力導入孔13と、二重成形時の位置決め穴12と水,ガソリン等の侵入防止壁16を設けてなる。この侵入防止壁は、根元を直角にすることで、表面張力によるガソリンなどの吸い上がりを防止する効果がある。次にターミナル11に温度測定用のサーミスタ17と外部接続用端子8を溶接21により、固定する。図1に示すように、外装ケース14を構成させるために、前記パイプ組10と外部接続用端子8a,8b,取付フランジ形成用ブッシュ22同時にセットし、パイプ組10と同一合成樹脂により、二重成形で外部との接続用コネクタ部15と外装ケース14が形成出来る。
【0009】
この時同時に図1のサーミスタ18の被測定媒体を取り込む通気孔19,20も形成される。この通気孔は19,20は本実施例構造とすることで、外装ケース14装着部の壁温に加わる熱の影響を排除すると共に、温度計測応答性の良いセンサとすることが出来る。
【0010】
前記外装ケース14に半導体ゲージケース組1に半導体ゲージチップ4をガラス台3に陽極接合等で接合されている。これをシリコーン接着剤2で接着する。次にリードターミナル6にアルミワイヤー5により、接続されている。更に半導体ゲージチップ4の保護としてフッソ系ゲル7で覆ってなる半導体ゲージケース組1を収納し、外部接続用端子8b,8c,8dとリードターミナル6をプロジェクション溶接21で接合する。その後半導体ゲージチップを外部からの電磁波ノイズ等から保護するためのコンデンサ9aをGNDとVcc間9bをGNDとVout間にはんだ付けにより接続している。次に、圧力測定用のセンサは、気密漏れは特性に影響するので、完全に封止する事が重要である、そこで、パイプ組10とターミナル11及び外部接続用金属端子8a,8b,8c,8dを外装ケース14モールド成形後樹脂単体が物理的に後収縮が起こり、微少な隙間が生じ漏れが発生するので、その隙間を封止させるために、エポキシ樹脂17を充填硬化させることにより達成できる。このとき外装ケース樹脂14と金属端子8a,8b,8c,8dとエポキシ樹脂17の線膨張係数を近似させ物性的な動きをエポキシ樹脂の接着強度より小さくすることが重要である。特にエポキシ樹脂17のガラス転移点温度を実使用温度より高めにしておく必要がある。なぜなら、物性的にガラス転移点を越えると急激に熱膨張が大きくなり、外装ケース14とエポキシ樹脂17の接着界面に剥離が生じるためである。次にOリング24を装着して半導体圧力温度一体センサが完成される。
【0011】
尚、上述の各例において、基本的な考え方としては請求項に示した内容に包括されており、これらの構成要素で個別の構成要素については全く限定しないものである。
【0012】
【発明の効果】
端子,金属リードからの気密低下を防止できる。
【図面の簡単な説明】
【図1】本発明の一実施形態による半導体圧力センサの構成を示す断面図である。
【図2】図1の、本発明の平面図である。
【図3】図1の、後外観図である。
【図4】本発明のパイプ組の断面図である。
【図5】本発明のパイプ組の断面図である。
【図6】図5の平面図である。
【符号の説明】
1…半導体ゲージケース組、2…シリコーン接着剤、3…ガラス台、4…半導体ゲージチップ、5…アルミワイヤー、6…リードターミナル、7…フッソ系ゲル。
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a pressure sensor, and particularly to a semiconductor pressure sensor integrated with a temperature sensor.
[0002]
[Prior art]
A conventional method for maintaining the airtightness of a terminal portion of a pressure sensor, as described in Patent Literature 1, uses a protective member such as a gel when a metal lead material is insert-molded with an organic resin material or the like to ensure airtightness. I was However, there is a problem that a gap is generated at an interface of each part in a cooling / heating cycle due to a difference in linear expansion coefficient of each member, and airtightness is reduced.
[0003]
[Patent Document 1]
JP-A-11-304609
[Problems to be solved by the invention]
An object of the present invention is to prevent a decrease in airtightness from terminals and metal leads in a semiconductor pressure sensor having both a pressure change of a medium to be measured and a temperature change of a medium to be measured into an electric signal. It is in.
[0005]
[Means for Solving the Problems]
In a semiconductor pressure sensor that also has a temperature sensor that converts a change in pressure of the medium to be measured and a change in temperature of the medium to be measured into an electric signal, after integrally molding a pipe set with a synthetic resin, the gap between the pipe set and the semiconductor pressure sensor storage case gap is reduced. The airtightness can be ensured by filling and fixing the metal terminal and the epoxy resin having a linear expansion coefficient similar to that of the synthetic resin for airtight sealing of the metal terminal gap.
[0006]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a configuration of a semiconductor pressure sensor according to an embodiment of the present invention will be described with reference to FIGS. First, a configuration of a sensor set of a semiconductor pressure sensor according to an embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a sectional view showing a configuration of a semiconductor pressure sensor according to one embodiment of the present invention. FIG. 2 is a plan view of the present invention shown in FIG. FIG. 3 is a rear view of FIG.
[0007]
4 and 5 are sectional views of the pipe set of the present invention. FIG. 6 is a plan view of FIG.
[0008]
First, in the configuration of the pipe set 10 shown in FIGS. 4 and 5, the terminal 11 is inserted and molded with a synthetic resin. The shape is provided with a pressure introducing hole 13, a positioning hole 12 at the time of double molding, and a wall 16 for preventing intrusion of water, gasoline and the like. This intrusion prevention wall has an effect of preventing suction of gasoline or the like due to surface tension by making the root at a right angle. Next, the thermistor 17 for temperature measurement and the terminal 8 for external connection are fixed to the terminal 11 by welding 21. As shown in FIG. 1, in order to configure the exterior case 14, the pipe set 10, the external connection terminals 8 a and 8 b, and the mounting flange forming bush 22 are simultaneously set. The external connection connector 15 and the outer case 14 can be formed by molding.
[0009]
At this time, ventilation holes 19 and 20 for taking in the medium to be measured of the thermistor 18 in FIG. Since the vent holes 19 and 20 have the structure of the present embodiment, it is possible to eliminate the influence of heat applied to the wall temperature of the mounting portion of the outer case 14 and to provide a sensor having good temperature measurement responsiveness.
[0010]
The semiconductor gauge chip 4 is joined to the semiconductor gauge case set 1 on the outer case 14 and the glass base 3 by anodic bonding or the like. This is adhered with a silicone adhesive 2. Next, it is connected to the lead terminal 6 by the aluminum wire 5. Further, as a protection for the semiconductor gauge chip 4, the semiconductor gauge case set 1 covered with the fluorine-based gel 7 is housed, and the external connection terminals 8b, 8c, 8d and the lead terminal 6 are joined by projection welding 21. Thereafter, a capacitor 9a for protecting the semiconductor gauge chip from external electromagnetic noise and the like is connected between GND and Vcc 9b between GND and Vout by soldering. Next, it is important to completely seal the pressure measurement sensor because the airtight leakage affects the characteristics. Therefore, the pipe set 10 and the terminal 11 and the external connection metal terminals 8a, 8b, 8c, Since the resin alone physically shrinks after molding the outer case 14 to form 8d, a minute gap is generated and leakage occurs, and the sealing can be achieved by filling and curing the epoxy resin 17 to seal the gap. . At this time, it is important that the linear expansion coefficients of the outer case resin 14, the metal terminals 8a, 8b, 8c, 8d and the epoxy resin 17 be approximated so that the physical movement is smaller than the adhesive strength of the epoxy resin. In particular, the glass transition temperature of the epoxy resin 17 needs to be higher than the actual use temperature. This is because thermal expansion suddenly increases when the physical property exceeds the glass transition point, and peeling occurs at the bonding interface between the outer case 14 and the epoxy resin 17. Next, the O-ring 24 is mounted to complete the semiconductor pressure / temperature integrated sensor.
[0011]
In each of the above-described examples, the basic concept is included in the contents described in the claims, and individual components among these components are not limited at all.
[0012]
【The invention's effect】
Airtightness from terminals and metal leads can be prevented.
[Brief description of the drawings]
FIG. 1 is a sectional view showing a configuration of a semiconductor pressure sensor according to an embodiment of the present invention.
FIG. 2 is a plan view of the present invention shown in FIG.
FIG. 3 is a rear view of FIG.
FIG. 4 is a sectional view of a pipe set according to the present invention.
FIG. 5 is a sectional view of a pipe set according to the present invention.
FIG. 6 is a plan view of FIG. 5;
[Explanation of symbols]
1 ... Semiconductor gauge case set, 2 ... Silicone adhesive, 3 ... Glass stand, 4 ... Semiconductor gauge chip, 5 ... Aluminum wire, 6 ... Lead terminal, 7 ... Fuso gel.

Claims (6)

圧力を検出する半導体を備えた圧力センサにおいて、被測定媒体の温度変化を電気信号に変換する温度センサを備え、パイプ組を合成樹脂で、二重モールド成形構造としたことを特徴とした圧力センサ。A pressure sensor comprising a semiconductor for detecting pressure, comprising a temperature sensor for converting a change in temperature of a medium to be measured into an electric signal, wherein a pipe set is made of a synthetic resin and has a double molded structure. . 前記パイプ組にインサートされている、金属ターミナルに被測定媒体の温度測定用のサーミスタと、外部電気的接続用金属端子が溶接固定されていることを特徴とした圧力センサ。A pressure sensor, wherein a thermistor for measuring the temperature of the medium to be measured and a metal terminal for external electrical connection are welded and fixed to a metal terminal inserted into the pipe set. 前記二重モールド成形構造で、パイプ組と、半導体圧力センサ収納ケース隙間と金属ターミナル及び、金属端子隙間の気密封止用としてエポキシ樹脂を、充填固定したことを特徴とした圧力センサ。A pressure sensor, wherein said double-molded structure is filled with a pipe set, a semiconductor pressure sensor housing case gap, a metal terminal, and an epoxy resin for hermetically sealing the metal terminal gap. 前記二重モールド成形合成樹脂は、パイプ組と同一材質で、線膨張係数は15〜38ppm/℃ 、気密封止用エポキシ樹脂のガラス転移点は、160℃以上で、線膨張係数は、15〜38ppm/℃ との組み合わせとしたことを特徴とした圧力センサ。The double-molded synthetic resin is made of the same material as the pipe set, has a linear expansion coefficient of 15 to 38 ppm / ° C., a glass transition point of the hermetic sealing epoxy resin is 160 ° C. or higher, and a linear expansion coefficient of 15 to 15. A pressure sensor comprising a combination of 38 ppm / ° C. 前記二重モールド成形において、前記温度測定用サーミスタ収納部の構造は、サーミスタとターミナルの溶接部が被測定媒体の通気孔から見えない位置に設けられたことを特徴とした圧力センサ。In the double molding, the structure of the temperature measurement thermistor accommodating portion is provided at a position where a welded portion between the thermistor and the terminal is not visible from a vent of the medium to be measured. 前記パイプ組のサーミスタ側端部通気孔部に、壁を設けたことを特徴とした圧力センサ。A pressure sensor, characterized in that a wall is provided at the thermistor-side end vent of the pipe set.
JP2003154274A 2003-05-30 2003-05-30 Pressure sensor Pending JP2004354294A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007132745A (en) * 2005-11-09 2007-05-31 Hitachi Ltd Pressure detector having temperature detection function
JP2008032506A (en) * 2006-07-28 2008-02-14 Denso Corp Sensor device and its manufacturing method
KR100868125B1 (en) 2006-02-20 2008-11-10 미쓰비시덴키 가부시키가이샤 Semiconductor pressure sensor apparatus
JP2011129553A (en) * 2009-12-15 2011-06-30 Denso Corp Fuel resistance package
EP2423649A1 (en) * 2010-08-31 2012-02-29 Hitachi Automotive Systems, Ltd. Sensor structure

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JPH1172402A (en) * 1997-08-29 1999-03-16 Mitsubishi Electric Corp Pressure sensor device
JPH11160178A (en) * 1997-12-01 1999-06-18 Hokuriku Electric Ind Co Ltd Pressure sensor and its manufacture
JP2002168701A (en) * 2000-11-30 2002-06-14 Denso Corp Temperature sensor
WO2002079743A1 (en) * 2001-03-29 2002-10-10 Hitachi, Ltd. Semiconductor pressure sensor
JP2002310829A (en) * 2001-04-19 2002-10-23 Hitachi Ltd Semiconductor pressure sensor
WO2003036251A1 (en) * 2001-10-18 2003-05-01 Hitachi, Ltd. Sensor
JP2003149068A (en) * 2001-11-16 2003-05-21 Hitachi Ltd Pressure detector

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1172402A (en) * 1997-08-29 1999-03-16 Mitsubishi Electric Corp Pressure sensor device
JPH11160178A (en) * 1997-12-01 1999-06-18 Hokuriku Electric Ind Co Ltd Pressure sensor and its manufacture
JP2002168701A (en) * 2000-11-30 2002-06-14 Denso Corp Temperature sensor
WO2002079743A1 (en) * 2001-03-29 2002-10-10 Hitachi, Ltd. Semiconductor pressure sensor
JP2002310829A (en) * 2001-04-19 2002-10-23 Hitachi Ltd Semiconductor pressure sensor
WO2003036251A1 (en) * 2001-10-18 2003-05-01 Hitachi, Ltd. Sensor
JP2003149068A (en) * 2001-11-16 2003-05-21 Hitachi Ltd Pressure detector

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007132745A (en) * 2005-11-09 2007-05-31 Hitachi Ltd Pressure detector having temperature detection function
KR100868125B1 (en) 2006-02-20 2008-11-10 미쓰비시덴키 가부시키가이샤 Semiconductor pressure sensor apparatus
JP2008032506A (en) * 2006-07-28 2008-02-14 Denso Corp Sensor device and its manufacturing method
JP2011129553A (en) * 2009-12-15 2011-06-30 Denso Corp Fuel resistance package
EP2423649A1 (en) * 2010-08-31 2012-02-29 Hitachi Automotive Systems, Ltd. Sensor structure
US20120048015A1 (en) * 2010-08-31 2012-03-01 Hitachi Automotive Systems, Ltd. Sensor Structure
CN102384765A (en) * 2010-08-31 2012-03-21 日立汽车系统株式会社 Sensor Structure
US8549914B2 (en) 2010-08-31 2013-10-08 Hitachi Automotive Systems, Ltd. Sensor structure

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