JP2004349187A - Manufacturing method for electron emission element and manufacturing method for display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To orientate a larger number of emitter materials vertically without damaging other device structures. <P>SOLUTION: This manufacturing process for an electron emission element comprises a first process forming an emitter layer 10 containing fibrous carbon nanotubes 11 on a cathode electrode 5 formed on a supporting substrate 4 and a second process vertically orientating the carbon nanotubes 11 on the surface of the emitter layer 10 by applying an adhesive material 22 volumetrically contracted by ultraviolet irradiation on the supporting substrate 4 to adhere to the carbon nanotubes 11 and volumetric contracting the adhered adhesive material 22 by ultraviolet irradiation. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a field emission type electron-emitting device and a display device including the electron-emitting device.
[0002]
[Prior art]
When an electric field of a certain threshold or more is applied to a surface of a conductor such as a metal or a semiconductor placed in a vacuum, electrons pass through a barrier due to a tunnel effect, and the electrons are emitted into the vacuum even at room temperature. This phenomenon is called field emission, and a cathode (electron emission element) that emits electrons by this is called a field emission cathode. In recent years, an FED (Field Emission Display) has attracted attention as a flat display device (flat display device) in which a large number of micron-sized field emission cathodes are formed on a substrate using semiconductor processing technology. The FED emits electrons by the concentration of an electric field from an electrically selected (addressing) emitter, and collides the electrons with a phosphor on the anode substrate side to display an image by excitation and emission of the phosphor. It is.
[0003]
Recently, as a configuration of a field emission cathode, an emitter structure using carbon nanotubes having an infinite number of extremely sharp tips has been proposed. In general, carbon nanotubes have a high aspect ratio and a very small radius of curvature at the tip, and thus have attracted attention as emitter materials (electron emission sources) that achieve high luminous efficiency. When carbon nanotubes are actually used as the emitter material, it is effective to orient the emitter material (carbon nanotube) vertically (upright orientation) with respect to the cathode substrate in order to stably and efficiently emit electrons from the emitter. It becomes.
[0004]
Therefore, conventionally, a step of applying a cathode conductor on an insulating substrate, a step of applying a dispersion of a carbon material containing carbon nanotubes on the cathode conductor to form a carbon layer, and a step of drying the carbon layer And a method of attaching an adhesive tape to a dried carbon layer and then peeling the adhesive tape to form an emitter, which discloses a method of manufacturing an electron emission source (see Patent Document 1).
[0005]
Conventionally, a CNT film constituting an emitter including a plurality of carbon nanotubes (CNTs) is formed on a substrate, and the CNTs on the surface of the CNT film are adhered to an adhesive sheet on the CNT film. Patent Document 2 discloses an invention relating to a method for manufacturing an emitter in which the substrate is vertically oriented by peeling off the substrate.
[0006]
[Patent Document 1]
JP 2001-35360 A (Paragraph 0038, FIG. 10)
[Patent Document 2]
Japanese Patent Application Laid-Open No. 2002-157951 (Claim 1, Claim 2, paragraphs 0052, 0053, FIG. 4)
[0007]
[Problems to be solved by the invention]
However, in the method of vertically aligning the emitter material (carbon nanotube) by attaching (sticking) and peeling off the adhesive tape as in the prior arts described in Patent Documents 1 and 2, the emitter material is firmly attached to the adhesive tape. The adhesive tape is forcibly peeled off in a state where the adhesive tape is adhered to the adhesive tape. For this reason, when the adhesive tape is peeled off, the pulling force due to the peeling acts strongly, and there is a possibility that the emitter material may be cut off from the surface of the emitter or may damage other device structures.
[0008]
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object of the present invention is to make it possible to vertically align more emitter materials without damaging other device structures. An object of the present invention is to provide a method for manufacturing an element and a method for manufacturing a display device.
[0009]
[Means for Solving the Problems]
The method for manufacturing an electron-emitting device according to the present invention includes a first step of providing a fibrous emitter material in a fixed state on a cathode electrode formed on a support substrate, and an adhesive material that contracts in volume by a predetermined process as the emitter material. A second step of vertically orienting the emitter material by causing the adhesive to adhere and causing the attached adhesive to contract in volume by a predetermined process.
[0010]
In this method of manufacturing an electron-emitting device, an adhesive is attached to a fibrous emitter material provided in a fixed state on a cathode electrode, and in this state, the volume of the adhesive is reduced by a predetermined process, so that the adhesive on the support substrate is removed. The emitter material is pulled vertically by the volume contraction of the adhesive. Thereby, the emitter material is vertically oriented on the support substrate, and the amount of protrusion of the emitter material due to the vertical orientation depends on the volume shrinkage of the adhesive.
[0011]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0012]
FIG. 1 is a sectional view showing a configuration of a display panel of an FED as an example of a display device to which the method of the present invention is applied, and FIG. 2 is a perspective view showing a configuration of the display panel. In FIGS. 1 and 2, a flat cathode substrate (cathode panel) 1 and a similarly flat anode substrate (anode panel) 2 are arranged to face each other with a predetermined gap therebetween. One panel structure (display panel) for displaying images is configured by interposing the frame 3 between the substrates 1 and 2 and integrally assembling the frame.
[0013]
A plurality of electron-emitting devices are formed on the cathode substrate 1. A large number of these electron-emitting devices are formed in a two-dimensional matrix in an effective region (a region that actually functions as a display portion) of the cathode substrate 1. Each electron-emitting device includes an insulating support substrate (for example, a glass substrate) 4 serving as a base of the cathode substrate 1, a cathode electrode 5, an insulating layer 6, and a gate sequentially formed on the support substrate 4 in a laminated state. It comprises an electrode 7, a gate hole 8 formed in the gate electrode 7 and the insulating layer 6, and an electron emission portion 9 formed at the bottom of the gate hole 8.
[0014]
The cathode electrode 5 is formed in a stripe shape so as to form a plurality of cathode lines. The gate electrode 7 is formed in a stripe shape so as to form a plurality of gate lines crossing (orthogonal to) each cathode line. The gate hole 8 includes a first opening 8A formed in the gate electrode 7 and a second opening 8B formed in the insulating layer 6 in a state of communicating with the first opening 8A. I have. The electron emitting portion 9 is formed by an emitter layer 10 mainly containing an emitter material and a binder material (matrix). On the surface of the emitter layer 10, a plurality of carbon nanotubes 11 serving as a fibrous emitter material are arranged. One end of each carbon nanotube 11 projects vertically from the surface of the emitter layer 10, and the other end is embedded in the binder material of the emitter layer 10.
[0015]
The carbon nanotube 11 has a single-layer or multilayer cylindrical shape obtained by rolling a graphene sheet, and is a material having a high aspect ratio of about 0.7 to 50 nm in diameter and several μm in length. Since the carbon nanotube 11 is a material having a very sharp edge, an electron emitting device having excellent electron emission characteristics can be obtained by using the carbon nanotube 11 as an emitter material. However, any substance other than the carbon nanotubes 11 may be used as the emitter material as long as the substance has a fine fibrous shape that can be used as the emitter material.
[0016]
On the other hand, the anode substrate 2 includes a transparent substrate 12 serving as a base, a phosphor layer 13 and a black matrix 14 formed on the transparent substrate 12, and a transparent substrate 12 covering the phosphor layer 13 and the black matrix 14. And an anode electrode 15 formed thereon. The phosphor layer 13 is composed of a phosphor layer 13R for emitting red light, a phosphor layer 13G for emitting green light, and a phosphor layer 13B for emitting blue light. The black matrix 14 is formed between the phosphor layers 13R, 13G, and 13B for each color emission. The anode electrode 15 is formed in a laminated state over the entire effective area of the anode substrate 2 so as to face the electron-emitting device of the cathode substrate 1.
[0017]
The cathode substrate 1 and the anode substrate 2 are joined via a frame 3 at their respective outer peripheral portions (peripheral portions). Further, a through hole 16 for evacuation is provided in an ineffective area (an area outside the effective area and not actually functioning as a display portion) of the cathode substrate 1. A chip tube 17 that is sealed off after evacuation is connected to the through hole 16. However, since FIG. 1 shows a state in which the display device has been assembled, the tip tube 17 has already been sealed off. In FIGS. 1 and 2, the illustration of the withstand voltage support (spacer) provided in the gap between the substrates 1 and 2 is omitted.
[0018]
In the display device having the above-described panel structure, a relative negative voltage is applied to the cathode electrode 5 from the cathode electrode control circuit 18, and a relative positive voltage is applied to the gate electrode 7 from the gate electrode control circuit 19. A positive voltage higher than that of the gate electrode 7 is applied to the anode electrode 15 from the anode electrode control circuit 20. When an image is actually displayed in such a display device, for example, a scanning signal is input to the cathode electrode 5 from the cathode electrode control circuit 18, and a video signal is input to the gate electrode 7 from the gate electrode control circuit 19. Alternatively, a video signal is input to the cathode electrode 5 from the cathode electrode control circuit 18, and a scanning signal is input to the gate electrode 7 from the gate electrode control circuit 19.
[0019]
As a result, a voltage is applied between the cathode electrode 5 and the gate electrode 7, whereby the electric field is concentrated on the sharp portion of the electron emitting portion 9 (the tip portion of the carbon nanotube 11). Electrons are emitted from the electron emitting portion 9 into the vacuum through the energy barrier. The emitted electrons are attracted to the anode electrode 15 and move to the anode substrate 2 side, and collide with the phosphor layers 13 (13R, 13G, 13B) on the transparent substrate 12. As a result, the phosphor layer 13 emits light when excited by the collision of electrons, so that a desired image can be displayed on the display panel by controlling the light emitting position in pixel units.
[0020]
Subsequently, a specific example of the method for manufacturing the electron-emitting device according to the embodiment of the present invention will be described with reference to FIGS.
First, as shown in FIG. 3A, a cathode electrode (conductive layer) 5 is formed on a support substrate 4 serving as a base of the cathode substrate 1 using a conductive material for forming a cathode electrode. The cathode electrode 5 is formed of, for example, a chromium layer having a thickness of about 0.2 μm formed by a sputtering method.
[0022]
Next, a SiCN film is formed on the entire surface of the support substrate 4 by, for example, a sputtering method, and as shown in FIG. The resistance layer 21 is formed. The resistance layer 21 reduces the effective voltage acting on the emitter by increasing the voltage drop due to the resistance when the discharge current to the emitter increases, and conversely, when the discharge current to the emitter decreases, the resistance layer 21 It serves to stabilize the discharge current by increasing the effective voltage that acts. The resistance layer 21 is formed as needed.
[0023]
Next, a process for arranging the carbon nanotubes 11 serving as an emitter material on the resistance layer 21 (on the cathode electrode 5 when the resistance layer 21 is not formed) is performed. Specifically, while using organotin and organoindium, which are thermally decomposable organic metals, as a binder material, and using carbon nanotube powder as an emitter material, these are dispersed in a volatile solution, for example, butyl acetate, under the following conditions. A mixed solution is obtained. At that time, an ultrasonic treatment may be performed to improve the dispersibility of the carbon nanotube. The diluent may be aqueous or non-aqueous, but it is assumed that the dispersant varies depending on which is used. It is also possible to mix other additives. As the carbon nanotube, one having an extremely elongated tube structure (fibrous shape) having an average diameter of 1 nm and an average length of 1 μm is used, for example. This carbon nanotube is produced, for example, by an arc discharge method.
[0024]
(Conditions for producing a mixed solution)
Organic tin and organic indium: 10 to 50% by mass
Butyl acetate: 30 to 80% by mass
Dispersant (for example, sodium dodecyl sulfate): 0.1 to 5% by mass
Carbon nanotube: 0.01 to 20% by mass
[0025]
In addition, as an emitter material, a carbon nanofiber can be used other than the carbon nanotube. Further, as the binder material, metal salts such as tin chloride and indium chloride can be used in addition to the above-mentioned thermally decomposable organic metals.
[0026]
Subsequently, the emitter layer (composite layer) 10 containing the carbon nanotubes and the binder material is formed as shown in FIG. 3C by applying the above mixed solution onto the supporting substrate 4 by a spray method or the like. I do. This emitter layer 10 can also be formed using a printing method. At this time, if necessary, a solution (matrix solution) which is a binder material having the same mass distribution as the above mixed solution and does not contain carbon nanotubes is applied to the surface of the emitter layer 10 by a spray method or the like (top coating). Is also good. In addition, for example, ITO (Indium Tin Oxide) fine particles may be mixed as a filler into this solution.
[0027]
Thereafter, the emitter layer 10 is fired under the following conditions. Thereby, the solidified emitter layer 10 in which the carbon nanotubes are embedded in the binder material (in the matrix) due to the evaporation of the organic component is obtained. Therefore, the carbon nanotubes are fixed on the cathode electrode 5.
[0028]
(Firing conditions)
Atmosphere: Air firing temperature: 500 ° C
Firing time: 30 minutes
Next, the emitter layer 10 is processed into a stripe shape. Specifically, a resist material (photoresist) is applied by a spin coating method to form a resist film covering the emitter layer 10, and this resist film is patterned by a photolithography technique to serve as an etching mask. A resist pattern is formed on the emitter layer 10. Next, the portion excluding the emitter layer 10 covered with the resist pattern is removed by, for example, wet etching based on the following conditions, thereby forming the emitter layer 10 on the support substrate 4 as shown in FIG. It is formed in a stripe shape.
[0030]
(Wet etching conditions)
Etching solution: hydrochloric acid (HCL)
Etching time: 10 seconds to 30 minutes Etching temperature: 10 to 60 ° C
[0031]
At this time, if carbon nanotubes are present in regions other than the desired region, the unnecessary carbon nanotubes are removed by etching using oxygen plasma or an oxidizing solution under the following conditions.
[0032]
(Oxygen plasma etching conditions)
Apparatus: RIE (reactive ion etching) apparatus Introduced gas: Oxygen-containing gas plasma excitation power: 500 W
Bias power: 0 to 150 W (DC or RF may be used, but RF is preferred)
Etching time: 10 seconds or more
(Oxidation solution etching conditions)
Solution: KMnO ₄
Etching temperature: 20-80 ° C
Etching time: 10 seconds to 20 minutes
Subsequently, by patterning the resistive layer 21 and the cathode electrode 5 by a well-known lithography technique and a reactive ion etching method (RIE method), the cathode electrode 5 is formed on the support substrate 4 as shown in FIG. Are formed in a stripe shape. At this point, a plurality of cathode lines are formed on the support substrate 4.
[0035]
Next, as shown in FIG. 4A, an insulating layer 6 is formed on the supporting substrate 4 so as to cover the stacked portion of the cathode electrode 5, the resistance layer 21, and the emitter layer 10, and furthermore, the insulating layer 6 As shown in FIG. 4B, a gate electrode (conductive layer) 7 is formed using a conductive material for forming a gate electrode. Specifically, an insulating layer 6 made of, for example, SiO _{2 having} a thickness of about 1 μm is formed on the entire surface of the support substrate 4 by a CVD method using TEOS (tetraethoxysilane) as a source gas. A gate electrode 7 made of chromium is formed thereon by a sputtering method.
[0036]
Next, an etching mask (not shown) is formed on the gate electrode 7, and a predetermined portion of the gate electrode 7 is etched using the etching mask, so that the insulating layer 6 is formed on the insulating layer 6 as shown in FIG. The gate electrode 7 is formed in a stripe shape, and a first opening 8A penetrating the gate electrode 7 is formed. At this time, the stripe-shaped gate electrode 7 is formed so as to intersect (orthogonally) the cathode electrode 5 at a substantially right angle. Thus, a plurality of gate lines orthogonal to the cathode lines are formed on the support substrate 4.
[0037]
Next, the insulating layer 6 is etched by, for example, RIE through the first opening 8A of the gate electrode 7 to expose the surface of the emitter layer 10 as shown in FIG. An opening 8B is formed. Thus, a gate hole 8 including the first and second openings 8A and 8B is obtained. The gate hole 8 is formed, for example, in a circular shape having a diameter of 20 μm. Further, a plurality of (for example, several tens) gate holes 8 are formed per pixel.
[0038]
Next, by removing the binder material (matrix) in the upper layer portion of the emitter layer 10 through the gate hole 8, as shown in FIG. Many) carbon nanotubes 11 are exposed. As a method for removing the binder material in the upper layer portion of the emitter layer 10, an etching method (half etching) such as wet etching or dry etching can be preferably used. As an example, conditions for applying wet etching are shown below. By selectively removing the binder material in the upper layer portion of the emitter layer 10 by this etching, many carbon nanotubes 11 can be exposed on the surface of the emitter layer 10.
[0039]
(Wet etching conditions)
Etching solution: hydrochloric acid 10%
Etching temperature: 10-60 ° C
Etching time: 5 to 60 seconds
The method of removing the binder material is not limited to the above-described etching method. For example, a method of removing by a mechanical polishing using a wrapping tape or a method of removing by a particle collision such as sandblasting. It is also possible to apply a method or the like.
[0041]
Thereafter, as shown in FIG. 5C, an orientation treatment of the carbon nanotubes 11 is performed so that each carbon nanotube 11 stands upright (perpendicularly) with respect to the support substrate 4 on the surface of the emitter layer 10. In this orientation treatment, an adhesive material that contracts in volume by a predetermined treatment is used. As the adhesive material of the adhesive, for example, an ultraviolet curable resin or a thermosetting resin can be used. In the case of an adhesive using an ultraviolet-curable resin, volume contraction occurs due to the ultraviolet irradiation treatment of irradiating ultraviolet rays to the adhesive. In the case of an adhesive using a thermosetting resin, the adhesive is heated to a predetermined temperature (curing temperature). The processing will result in volume shrinkage.
[0042]
The form of the adhesive may be a film, liquid, gel, or the like. When a film-like adhesive is used, it is attached on the support substrate 4. Specific examples of the film-like adhesive include those having a dry film structure and a UV tape (ultraviolet curing type adhesive tape). Acrylic resin that shrinks in volume when irradiated with ultraviolet light can be used as the adhesive material of the film-like adhesive, and the film base material (tape base material) has an appropriate shape such as polyolefin or PET (polyethylene terephthalate). A resin having a holding force can be used. The UV tape is a pressure-sensitive adhesive tape having a very strong adhesive force before being irradiated with ultraviolet rays, and having a property of rapidly decreasing the adhesive force when irradiated with ultraviolet rays.
[0043]
In the case of performing the alignment treatment of the carbon nanotubes 11 using a film-like adhesive, as shown in FIG. 6A, the film-like adhesive 22 including the base material portion 22A and the adhesive portion 22B is placed on the support substrate 4. Paste in. At this time, by appropriately pressing the adhesive 22 with a laminator, the adhesive 22 of the adhesive 22 is pushed into the gate hole 8, and each carbon nanotube exposed on the surface of the emitter layer 10 in the gate hole 8. The adhesive portion 22B is attached to (emitter material). As a result, each of the carbon nanotubes exposed on the emitter surface comes into close contact (adhesion) with the adhesive portion 22B of the adhesive 22.
[0044]
Incidentally, when a liquid or gel-like adhesive is used, the adhesive is applied to the carbon nanotubes by applying the adhesive to the support substrate 4 using a dispenser, a spin coater, a screen printer or the like. In this case, by appropriately adjusting the viscosity of the adhesive, the adhesive can be easily filled in the gate hole 8 and a mechanical contact state with the carbon nanotube can be obtained.
[0045]
When the film-shaped adhesive 22 is used as described above, the adhesive 22 can be easily handled, and the adhesive 22 can be easily removed from the support substrate 4 after the ultraviolet irradiation treatment. In addition, the supporting substrate 4 is placed on an elastic sheet (for example, a silicone-made sheet having rubber-like elasticity) that absorbs the pressing force at the time of attaching, and the adhesive 22 is attached to the film-like adhesive 22. Can be deformed according to the uneven structure on the support substrate 4. Thereby, the adhesive 22 can be made to adhere to the carbon nanotubes in the gate hole 8 reliably by appropriately causing the adhesive 22 to follow the uneven structure on the support substrate 4.
[0046]
Next, when the pressure-sensitive adhesive material 22 is contracted in volume by ultraviolet irradiation treatment, as shown in FIG. 6B, the pressure-sensitive adhesive portion 22B is gradually contracted in the gate hole 8 due to the shape retaining force of the base material portion 22A. The carbon nanotubes 11 are lifted up, and the respective carbon nanotubes 11 are vertically pulled up in conjunction with this. At this time, the adhesive 22 (adhesive portion 22B) contracts in volume due to the ultraviolet irradiation treatment, and accordingly, the adhesive force of the adhesive 22 (adhesive portion 22B) decreases. Therefore, when the volume contraction (ultraviolet curing treatment) of the adhesive 22 is completed, the adhesive force of the adhesive portion 22B is extremely reduced as compared to before the ultraviolet irradiation.
[0047]
The applicant examined the change in characteristics of the dry film used as an adhesive by ultraviolet irradiation treatment. When the irradiation amount of the ultraviolet light was set to 600 (mJ / cm ² sec), the irradiation before the irradiation of the ultraviolet light was performed. Has a volume shrinkage of 0%, an elongation at break of 300 to 1000 (%), an adhesive strength of 0.5 to 5.0 (N / 25 mm) on a stainless steel (SUS) plate, and a strength at break of 15 -30 (N / mm ² ), after irradiation with ultraviolet light, the volume shrinkage is 1-10%, the elongation at break is 1-200 (%), and the adhesive strength is stainless steel (SUS) plate. Above, 0.00001 to 0.5 (N / 25 mm), and the breaking strength was 5 to 25 (N / mm ² ).
[0048]
In this case, assuming that the thickness of the adhesive is 20 μm, the volume shrinkage caused by ultraviolet irradiation is 0.2 to 2.0 μm. Accordingly, the carbon nanotubes 11 are vertically erected (projected) from the surface of the emitter layer 10 by a dimension corresponding to the volume shrinkage amount.
[0049]
From this, as described above, the adhesive 22 is attached to the support substrate 4 and adhered to the carbon nanotubes 11, and the volume of the adhesive 22 is reduced by irradiation with ultraviolet rays in this state, whereby the surface of the emitter layer 10 is reduced. With this, the carbon nanotubes 11 can be vertically oriented. At this time, since the carbon nanotubes 11 are vertically aligned on the surface of the emitter layer 10 according to the volume shrinkage of the adhesive 22, the heights of the carbon nanotubes 11 are evenly arranged on the surface of the emitter layer 10. be able to. In addition, the height dimension of the carbon nanotubes 11 with respect to the surface of the emitter 10 can be controlled using the volume contraction amount of the adhesive 22 as a control parameter.
[0050]
In addition, since the adhesive strength of the adhesive 22 is reduced by the ultraviolet irradiation treatment, the carbon nanotubes 11 are not strongly pulled when the adhesive 22 is removed from the support substrate 4. Therefore, the carbon nanotubes 11 are not separated from the surface of the emitter layer 10 at all. In addition, since the adhesive 22 is removed from the support substrate 4 in a state where the adhesive force of the adhesive 22 is sufficiently weakened, there is no possibility of damaging other device structures.
[0051]
Therefore, according to the manufacturing method of the present embodiment, more carbon nanotubes 11 can be vertically oriented at a uniform height without damaging other device structures.
[0052]
【The invention's effect】
As described above, according to the present invention, the adhesive material that contracts in volume by a predetermined process is used for the alignment treatment of the emitter material, and the emitter material is vertically oriented using the heat shrinkage of the adhesive material. More emitter material can be vertically oriented without damaging the device structure. This makes it possible to manufacture an electron-emitting device having excellent electron-emitting characteristics.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating an example of a panel structure of a display device to which the present invention is applied.
FIG. 2 is a perspective view showing an example of a panel structure of a display device to which the present invention is applied.
FIG. 3 is a process diagram (part 1) illustrating a specific example of the method for manufacturing the electron-emitting device according to the embodiment of the present invention.
FIG. 4 is a process chart (part 2) illustrating a specific example of the method for manufacturing the electron-emitting device according to the embodiment of the present invention.
FIG. 5 is a process chart (part 3) illustrating a specific example of the method for manufacturing the electron-emitting device according to the embodiment of the present invention.
FIG. 6 is a diagram showing a specific example of an alignment treatment of an emitter material.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 ... Cathode substrate, 2 ... Anode substrate, 4 ... Support substrate, 5 ... Cathode electrode, 6 ... Insulating layer, 7 ... Gate electrode, 8 ... Gate hole, 9 ... Electron emission part, 10 ... Emitter layer, 11 ... Carbon nanotube (Emitter material), 22 ... adhesive

Claims (7)

A first step of providing a fibrous emitter material in a fixed state on the cathode electrode formed on the support substrate;
Attaching a pressure-sensitive adhesive that contracts in volume by a predetermined process to the emitter material, and reducing the volume of the adhered adhesive by the predetermined process to vertically align the emitter material. A method for manufacturing an electron-emitting device, comprising: 2. The method according to claim 1, wherein in the second step, the adhesive strength of the adhesive is reduced by the predetermined treatment. 2. The method according to claim 1, wherein the predetermined process is an ultraviolet irradiation process or a heating process. 2. The method according to claim 1, wherein in the second step, the adhesive material is formed into a film shape, and the film-shaped adhesive material is attached to the support substrate, whereby the adhesive material is attached to the emitter material. A method for manufacturing the electron-emitting device according to the above. In the second step, the adhesive material is made into a liquid or gel state, and the liquid or gel adhesive material is applied on the support substrate, whereby the adhesive material is attached to the emitter material. The method for manufacturing an electron-emitting device according to claim 1. 2. The method according to claim 1, wherein in the first step, a carbon nanotube is used as the emitter material. As a manufacturing process of the electron-emitting device,
A first step of providing a fibrous emitter material in a fixed state on the cathode electrode formed on the support substrate;
Attaching a pressure-sensitive adhesive that contracts in volume by a predetermined process to the emitter material, and reducing the volume of the adhered adhesive by the predetermined process to vertically align the emitter material. A method for manufacturing a display device, comprising:

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