JP2004335607A5 - - Google Patents
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- JP2004335607A5 JP2004335607A5 JP2003127194A JP2003127194A JP2004335607A5 JP 2004335607 A5 JP2004335607 A5 JP 2004335607A5 JP 2003127194 A JP2003127194 A JP 2003127194A JP 2003127194 A JP2003127194 A JP 2003127194A JP 2004335607 A5 JP2004335607 A5 JP 2004335607A5
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- JP
- Japan
- Prior art keywords
- raw material
- decomposition
- solvent component
- thin film
- oxide thin
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Description
【特許請求の範囲】
【請求項１】 溶媒を用いて溶解した固体原料の溶液を気化してなる原料ガスを供給する工程と、
供給された前記原料ガスから前記溶媒成分を分解する工程と、
前記溶媒成分の分解により生成された分解生成物を捕集する工程と、
前記溶媒成分が除去された前記原料ガスに酸化ガスを混合して、酸化物薄膜を成膜する工程と
を有することを特徴とする酸化物薄膜の製造方法。
【請求項２】 前記固体原料は、鉛、ジルコニウム及びチタンの有機物を主成分とする原料、あるいはストロンチウム、ビスマス及びタンタルの有機物を主成分とする原料、あるいはビスマス、ランタン及びタンタルの有機物を主成分とする原料、あるいはこれらの原料に加えてストロンチウム、カルシウム、ランタン及びニオブのうち、少なくとも１種を添加した原料であることを特徴とする請求項１に記載の酸化物薄膜の製造方法。
【請求項３】 溶媒を用いて溶解した固体原料の溶液を気化してなる原料ガスが供給され、前記原料ガスから前記溶媒成分を分解する分解手段と、
前記分解手段における前記溶媒成分の分解により生成された分解生成物を捕集する捕集手段と、
前記分解手段で前記溶媒成分が除去された前記原料ガスに酸化ガスを混合して、酸化物薄膜を成膜する成膜手段と
を有することを特徴とする酸化物薄膜製造装置。
[Claims]
A step of supplying a raw material gas obtained by vaporizing a solution of a solid raw material dissolved using a solvent;
Decomposing the solvent component from the supplied source gas,
Collecting a decomposition product generated by the decomposition of the solvent component,
Mixing an oxidizing gas with the raw material gas from which the solvent component has been removed to form an oxide thin film.
2. The solid raw material is a raw material mainly composed of an organic substance of lead, zirconium and titanium, a raw material mainly composed of an organic substance of strontium, bismuth and tantalum, or a raw material mainly composed of an organic substance of bismuth, lanthanum and tantalum. The method for producing an oxide thin film according to claim 1, wherein the raw material is a raw material to which at least one of strontium, calcium, lanthanum, and niobium is added in addition to these raw materials.
3. Decomposition means for supplying a raw material gas obtained by vaporizing a solution of a solid raw material dissolved using a solvent, and decomposing the solvent component from the raw material gas;
Collection means for collecting decomposition products generated by the decomposition of the solvent component in the decomposition means,
An oxide thin film forming apparatus, comprising: mixing an oxidizing gas with the source gas from which the solvent component has been removed by the decomposition means to form an oxide thin film.
本発明の酸化物薄膜の製造方法は、溶媒を用いて溶解した固体原料の溶液を気化してなる原料ガスを供給する工程と、供給された前記原料ガスから前記溶媒成分を分解する工程と、前記溶媒成分の分解により生成された分解生成物を捕集する工程と、前記溶媒成分が除去された前記原料ガスに酸化ガスを混合して、酸化物薄膜を成膜する工程とを有する。 The method for producing an oxide thin film of the present invention includes a step of supplying a raw material gas obtained by vaporizing a solution of a solid raw material dissolved using a solvent, and a step of decomposing the solvent component from the supplied raw gas. A step of collecting a decomposition product generated by the decomposition of the solvent component, and a step of mixing an oxidizing gas with the raw material gas from which the solvent component has been removed to form an oxide thin film.
本発明の酸化物薄膜製造装置は、溶媒を用いて溶解した固体原料の溶液を気化してなる原料ガスが供給され、前記原料ガスから前記溶媒成分を分解する分解手段と、前記分解手段における前記溶媒成分の分解により生成された分解生成物を捕集する捕集手段と、前記分解手段で前記溶媒成分が除去された前記原料ガスに酸化ガスを混合して、酸化物薄膜を成膜する成膜手段とを有する。 The apparatus for producing an oxide thin film of the present invention is provided with a raw material gas obtained by vaporizing a solution of a solid raw material dissolved using a solvent, and a decomposition unit configured to decompose the solvent component from the raw material gas; A collecting means for collecting decomposition products generated by the decomposition of the solvent component; and an oxidizing gas mixed with the raw material gas from which the solvent component has been removed by the decomposition means to form an oxide thin film. Membrane means.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003127194A JP4025681B2 (en) | 2003-05-02 | 2003-05-02 | Method for manufacturing oxide thin film, apparatus for manufacturing oxide thin film, and method for manufacturing semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003127194A JP4025681B2 (en) | 2003-05-02 | 2003-05-02 | Method for manufacturing oxide thin film, apparatus for manufacturing oxide thin film, and method for manufacturing semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004335607A JP2004335607A (en) | 2004-11-25 |
| JP2004335607A5 true JP2004335607A5 (en) | 2006-06-15 |
| JP4025681B2 JP4025681B2 (en) | 2007-12-26 |
Family
ID=33503833
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003127194A Expired - Fee Related JP4025681B2 (en) | 2003-05-02 | 2003-05-02 | Method for manufacturing oxide thin film, apparatus for manufacturing oxide thin film, and method for manufacturing semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4025681B2 (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5194737B2 (en) * | 2007-11-20 | 2013-05-08 | 富士通セミコンダクター株式会社 | Film forming method, film forming apparatus and semiconductor device manufacturing method |
| US9103028B2 (en) | 2009-04-20 | 2015-08-11 | Toshiba Mitsubishi—Electric Industrial Systems Corporation | Method for forming metal oxide film, metal oxide film, and apparatus for forming metal oxide film |
| JP5652768B2 (en) * | 2009-09-02 | 2015-01-14 | 東芝三菱電機産業システム株式会社 | Metal oxide film forming method, metal oxide film and metal oxide film forming apparatus |
| JP7282188B2 (en) * | 2019-09-24 | 2023-05-26 | 東京エレクトロン株式会社 | Raw material supply device and raw material supply method |
-
2003
- 2003-05-02 JP JP2003127194A patent/JP4025681B2/en not_active Expired - Fee Related
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