JP2004320064A5 - - Google Patents

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Publication number
JP2004320064A5
JP2004320064A5 JP2004238471A JP2004238471A JP2004320064A5 JP 2004320064 A5 JP2004320064 A5 JP 2004320064A5 JP 2004238471 A JP2004238471 A JP 2004238471A JP 2004238471 A JP2004238471 A JP 2004238471A JP 2004320064 A5 JP2004320064 A5 JP 2004320064A5
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JP
Japan
Prior art keywords
forming
resin film
bump
opening
plating
Prior art date
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Granted
Application number
JP2004238471A
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Japanese (ja)
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JP4025322B2 (en
JP2004320064A (en
Filing date
Publication date
Application filed filed Critical
Priority to JP2004238471A priority Critical patent/JP4025322B2/en
Priority claimed from JP2004238471A external-priority patent/JP4025322B2/en
Publication of JP2004320064A publication Critical patent/JP2004320064A/en
Publication of JP2004320064A5 publication Critical patent/JP2004320064A5/ja
Application granted granted Critical
Publication of JP4025322B2 publication Critical patent/JP4025322B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Claims (2)

電極部を有する半導体基板に対して、前記電極部を覆うように樹脂膜を形成する樹脂膜形成工程と、
前記樹脂膜に対して、前記電極部に対応する位置に開口部を形成する開口部形成工程と、
電気めっき法により、バンプ形成用めっきを、その一部が前記樹脂膜上にオーバーハングするように前記開口部に供給する供給工程と、
前記開口部が形成された樹脂膜を前記半導体基板に残したままの状態で加熱処理を行うことにより、前記開口部において前記バンプ形成用めっきからバンプを形成するバンプ形成工程と、
前記樹脂膜を除去する除去工程と、
前記バンプが溶融するように再度加熱処理を行う工程とを含む、半導体装置の製造方法。
A resin film forming step of forming a resin film so as to cover the electrode part with respect to the semiconductor substrate having the electrode part,
An opening forming step of forming an opening at a position corresponding to the electrode portion with respect to the resin film;
Supplying the bump formation plating by electroplating to the opening so that a part thereof overhangs on the resin film; and
A bump forming step of forming bumps from the bump forming plating in the openings by performing heat treatment while leaving the resin film in which the openings are formed on the semiconductor substrate;
A removing step of removing the resin film;
And a step of performing a heat treatment again so that the bump is melted.
電極部を有する半導体基板に対して、前記電極部を覆うように樹脂膜を形成する樹脂膜形成工程と、A resin film forming step of forming a resin film so as to cover the electrode part with respect to the semiconductor substrate having the electrode part,
前記樹脂膜に対して、前記電極部に対応する位置に開口部を形成する開口部形成工程と、An opening forming step of forming an opening at a position corresponding to the electrode portion with respect to the resin film;
電気めっき法により前記開口部にバンプ形成用めっきを供給する供給工程と、Supplying a bump-forming plating to the opening by electroplating;
前記開口部が形成された樹脂膜を前記半導体基板に残したままの状態で前記バンプ形成用めっきを加熱溶融させ、表面張力の作用によりバンプ形成用めっきのオーバーハング部を消失させる加熱工程と、A heating step in which the bump forming plating is heated and melted while the resin film in which the openings are formed is left on the semiconductor substrate, and an overhang portion of the bump forming plating is eliminated by the action of surface tension, and
前記樹脂膜を除去する除去工程と、A removing step of removing the resin film;
前記バンプ形成用めっきが溶融するように再度加熱処理を行うバンプ形成工程とを含む、半導体装置の製造方法。  And a bump forming step in which heat treatment is performed again so that the bump forming plating is melted.
JP2004238471A 2001-11-15 2004-08-18 Manufacturing method of semiconductor device Expired - Fee Related JP4025322B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004238471A JP4025322B2 (en) 2001-11-15 2004-08-18 Manufacturing method of semiconductor device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001350720 2001-11-15
JP2004238471A JP4025322B2 (en) 2001-11-15 2004-08-18 Manufacturing method of semiconductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002247847A Division JP3615206B2 (en) 2001-11-15 2002-08-27 Manufacturing method of semiconductor device

Publications (3)

Publication Number Publication Date
JP2004320064A JP2004320064A (en) 2004-11-11
JP2004320064A5 true JP2004320064A5 (en) 2005-05-26
JP4025322B2 JP4025322B2 (en) 2007-12-19

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004238471A Expired - Fee Related JP4025322B2 (en) 2001-11-15 2004-08-18 Manufacturing method of semiconductor device

Country Status (1)

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JP (1) JP4025322B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007220959A (en) * 2006-02-17 2007-08-30 Fujitsu Ltd Semiconductor device and its manufacturing method
JP5307669B2 (en) * 2009-09-09 2013-10-02 東京エレクトロン株式会社 Method for manufacturing semiconductor device and method for obtaining electrical connection

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