JP2004289020A - Method and apparatus for developing treatment - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To uniformly perform the developing treatment of a resist having a strong water repellence with a small amount of developing liquid. <P>SOLUTION: A pure water paddle 102a at temperature T1 is formed on a resist film which has been exposed on a board W, and is previously wetted to lower the water repellence of the resist film. Then, a developing liquid paddle 101a made of a developing liquid 101 at lower temperature T2 than the temperature T1 is formed on the pure water paddle 102a while the pull back phenomenon is suppressed, and an exposure pattern is developed. The developing liquid 101 of the developing liquid paddle 101a of lower temperature penetrates uniformly in the pure water paddle 102a previously wetted at higher temperature by a convection, etc. due to a temperature difference, reaches the resist film, and performs a uniform developing treatment. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a developing method and a developing apparatus for developing an exposure pattern of a resist film after exposure on a substrate such as a semiconductor wafer.
[0002]
[Prior art]
For example, in a semiconductor device manufacturing process, a resist solution is supplied to a surface of a semiconductor wafer (hereinafter, referred to as a “wafer”) to form a resist film, and the resist-coated wafer is exposed to light in a predetermined pattern. A resist pattern is formed as a mask for forming a predetermined pattern by a so-called photolithography technique of developing an exposure pattern formed on a resist film of the wafer after performing the processing.
[0003]
In recent years, the miniaturization of semiconductor devices has been further advanced, and correspondingly, short-wavelength laser beams such as ArF lasers and F2 lasers have been used as exposure light used for pattern transfer (for example, see Patent Reference 1).
[0004]
By the way, a resist corresponding to an exposure process using short-wavelength exposure light has extremely high water repellency, and when a developer is padded on a substrate (resist film), a pullback phenomenon occurs, and the resist film is removed. It becomes difficult to hold the developing solution on top, and a large amount of developing solution is consumed to form a sound developing solution paddle. Further, if the water repellency is further increased, it is expected that paddle formation itself becomes difficult.
For this reason, in the development process of the resist having high water repellency as described above, it is conceivable to perform a pre-wet to form a pure water paddle on the substrate in order to reduce the water repellency and impact before forming the paddle of the developer. However, it has been found that uniform development processing is difficult due to variations in the state of penetration of the developer on the pre-wet pure water paddle into the resist film, for example (see Patent Document 2).
Also, as a rinsing method, a scanning method has been proposed (for example, Patent Document 3), but also in this case, the rinsing liquid does not reach the resist surface layer well, and the dissolved matter of the resist cannot be efficiently and uniformly removed. was there.
[0005]
[Patent Document 1]
JP-A-2002-336553
[Patent Document 2]
JP-A-11-67649
[Patent Document 3]
JP-A-4-124812
[0006]
[Problems to be solved by the invention]
The present invention has been made in view of the above circumstances, and when a resist having high water repellency is used, a developing method and a developing method capable of performing uniform development without using a large amount of a developing solution. It is intended to provide a device.
[0007]
Another object of the present invention is to provide a developing method and a developing apparatus capable of uniformly removing the developing solution with a low-impact rinsing solution in a relatively short time in a rinsing process after development. I do.
[0008]
[Means for Solving the Problems]
In order to solve the above problems, according to a first aspect of the present invention, a pre-wet step of applying pure water at a first temperature to a resist film after exposure on a substrate, and A developing step of applying a developing solution having a second temperature lower than the first temperature to develop an exposure pattern.
[0009]
According to a second aspect of the present invention, a developing step of supplying a developing solution to the exposed resist film on the substrate to develop an exposure pattern, and a fourth step of lowering the developing solution after the developing to a third temperature. A rinsing step of performing rinsing by supplying a rinsing liquid at a temperature onto the developing liquid.
[0010]
According to a third aspect of the present invention, there is provided a developing apparatus for supplying a developing solution to an exposed resist film on a substrate to develop an exposure pattern, wherein the substrate holding member holds the substrate substantially horizontally; A developer supply unit that includes a developer supply mechanism that supplies a developer to the substrate on the substrate holding member and a liquid temperature control mechanism that controls the temperature of the developer; and supplies pure water to the substrate on the substrate holding member. A pure water supply unit including a pure water supply mechanism and a liquid temperature control mechanism for controlling the temperature of the pure water; and the pure water at a first temperature on the exposed resist film on the substrate by the pure water supply unit. After performing the pre-wet to paddle, the developer supply unit performs an operation of padding the developer at a second temperature lower than the first temperature onto the pure water to develop an exposure pattern. A development processing device equipped with a control unit is provided. To.
[0011]
According to a fourth aspect of the present invention, there is provided a developing apparatus for supplying a developing solution to an exposed resist film on a substrate to develop an exposure pattern, comprising: a substrate holding member for holding the substrate substantially horizontally; A developer supply unit including a developer supply mechanism for supplying the developer to the substrate on the member and a temperature control mechanism for controlling the temperature of the developer; and a rinse supply for supplying a rinse to the substrate on the substrate holding member. A rinsing liquid supply unit including a mechanism and a liquid temperature control mechanism for controlling the temperature of the rinsing liquid; and developing the exposed pattern by supplying the developing liquid to the exposed resist film on the substrate from the developing liquid supply unit. And a control unit for performing a rinsing operation by supplying a rinsing liquid having a fourth temperature lower than a third temperature of the developing liquid after the development from the rinsing liquid supply unit onto the developing liquid. To provide a developed processing apparatus.
[0012]
According to the first and third aspects of the present invention described above, prior to the application of the developing solution, the first temperature in the developing process of supplying pure water to the exposed resist film on the substrate to develop the exposure pattern. Is performed, and a developer having a second temperature lower than the first temperature is applied thereon, so that the specific gravity of the developer is relatively larger than that of pure water, and the specific gravity difference As a result, the developer on pure water moves downward and reaches the entire resist film on the substrate, so that even when the water repellency of the resist film is high, a uniform development process can be performed without using a large amount of the developer. In addition, since the developing solution is supplied uniformly to the entire resist film on the substrate, a uniform developing process can be performed, and the uniformity of the line width of the pattern can be improved. Can be. Further, the pure water paddle serves as a cushion, so that a further soft paddle is possible.
[0013]
That is, since the developer usually contains pure water as a main component, at the same temperature, the specific gravity of the developer is only slightly larger than that of pure water, and the replacement of the developer with pure water does not effectively occur. Therefore, the developer on the pure water does not uniformly reach the resist film, but by giving a temperature difference between the developer and the pre-wet pure water as in the present invention, a substantial difference in specific gravity is brought about. It is considered that the above-described operation is performed.
[0014]
In the development process of a resist with high water repellency, a large amount of pure water is applied on the substrate to reduce the water repellency and impact, and a pure water paddle is formed so as to suppress the surface tension before forming the paddle of the developer. It is conceivable to perform pre-wet, and even if a developer is applied on a pre-wet pure water paddle as in Patent Document 2, variations in the state of penetration into the resist film occur, making uniform development difficult. It may be.
[0015]
According to the above-described second and fourth aspects of the present invention, in a rinsing step or the like after development, a rinsing solution having a lower temperature than the third temperature of the developing solution, for example, a fourth temperature such as an aqueous cleaning solution. The rinsing liquid permeates the developer evenly due to the difference in specific gravity due to the temperature difference, and the replacement of the developing solution with the rinsing liquid is performed gently and reliably. A uniform rinsing process can be performed.
[0016]
That is, usually, since the developer and the rinsing liquid are mainly composed of pure water, at the same temperature, the specific gravity is almost equal to that of pure water, and the temperature difference between the developing solution and the rinsing liquid brings about a difference in specific gravity. It is thought to work.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[0018]
FIG. 1 is a schematic plan view showing a resist coating / developing processing system including a developing unit which is an embodiment of the developing apparatus of the present invention, FIG. 2 is a front view thereof, and FIG. 3 is a rear view thereof.
[0019]
The resist coating / developing processing system 1 includes a cassette station 11 serving as a transfer station, a processing station 12 having a plurality of processing units, and an exposure apparatus 14 provided adjacent to the processing station 12 and a processing station 12. And an interface station 13 for transferring the wafer W.
[0020]
In the cassette station 11, a wafer cassette (CR) containing a plurality of (for example, 25) wafers W is loaded and unloaded, and as shown in FIG. A plurality of (five in FIG. 1) positioning projections 20a are formed in one row. The wafer cassette (CR) can be placed at the position of the positioning projection 20a with the wafer loading / unloading port facing the processing station 12 side.
[0021]
The cassette station 11 includes a wafer transfer mechanism having a wafer transfer pick 21a. The wafer transfer pick 21a can selectively access any one of the wafer cassettes (CR), and has a third processing unit group G of the processing station 12 described later. ₃ Transition unit (TRS-G ₃ ) Can be accessed.
[0022]
In the processing station 12, the third processing unit group G is arranged on the rear side of the system (upper in FIG. 1) in order from the cassette station 11 side. ₃ , Fourth processing unit group G ₄ And fifth processing unit group G ₅ Is arranged. Third processing unit group G ₃ And fourth processing unit group G ₄ Between the first main transport section A ₁ And a fourth processing unit group G ₄ And the fifth processing unit group G ₅ Between the second main transport section A ₂ Is provided. Further, on the front side of the system (lower in FIG. 1), the first processing unit group G is sequentially arranged from the cassette station 11 side. ₁ And second processing unit group G ₂ Is provided.
[0023]
As shown in FIG. 3, the third processing unit group G ₃ Then, an oven-type processing unit that places a wafer W on a mounting table and performs a predetermined process, for example, a high-temperature heat treatment unit (BAKE) that heats the wafer W, and a high-precision temperature that performs high-precision temperature control of the wafer W Key unit (CPL-G ₃ ), Temperature control unit (TCP), cassette station 11 and first main transport section A ₁ A transition unit (TRS-G) serving as a transfer unit for the wafer W between ₃ ) Are stacked in, for example, 10 stages.
[0024]
Fourth processing unit group G ₄ Then, for example, a pre-bake unit (PAB) for performing a heating process on the wafer W after the resist application, a post-bake unit (POST) for performing a heating process on the wafer W after the development process, and a high-precision temperature control unit (CPL-G) ₄ ) Are stacked in, for example, 10 stages. Fifth processing unit group G ₅ For example, a post-exposure bake unit (PEB) for performing a heat treatment on a wafer W after exposure and before development, and a high-precision temperature control unit (CPL-G) ₅ ) Are stacked in, for example, 10 stages.
[0025]
As shown in FIGS. 1 and 3, the first main transport section A ₁ Processing unit group G having an adhesion unit (AD) and a heating unit (HP) for heating the wafer W ₆ Is provided.
[0026]
Second main transport section A ₂ On the back side of the wafer, a peripheral exposure device (WEE) for selectively exposing only the edge portion of the wafer W to remove excess resist at the wafer peripheral portion, and a film thickness measuring device (FTI) for measuring the resist film thickness ), The seventh processing unit group G having ₇ Is provided.
[0027]
As shown in FIGS. 1 and 2, the first processing unit group G ₁ Then, five spinner-type processing units, for example, three resist coating units (COT) as liquid supply units for performing predetermined processing by placing the wafer W on the spin chuck SP in the cup (CP), and A bottom coating unit (BARC) for forming an anti-reflection film for preventing light reflection is stacked in a total of five stages. Also, the second processing unit group G ₂ In the figure, a spinner type processing unit, for example, a developing unit (DEV) is stacked in five stages.
[0028]
First main transport section A ₁ Is provided with a first main wafer transfer device 16, and the first main wafer transfer device 16 includes a first processing unit group G ₁ , The third processing unit group G ₃ , Fourth processing unit group G ₄ And sixth processing unit group G ₆ Each unit can be selectively accessed. Also, the second main transport section A ₂ Is provided with a second main wafer transfer device 17, and the second main wafer transfer device 17 includes a second processing unit group G ₂ , Fourth processing unit group G ₄ , Fifth processing unit group G ₅ , Seventh processing unit group G ₇ Each unit can be selectively accessed.
[0029]
FIG. 4 is a perspective view showing a schematic structure of the first main wafer transfer device 16. The first main wafer transfer device 16 includes three arms 7a, 7b, and 7c for holding the wafer W, arm support plates 51 attached to the base ends of the arms 7a to 7c, and arm support plates 51, respectively. A base 52 engaged with the base 52, a support 53 supporting the base 52 and the like, a motor (not shown) built in the support 53, a rotating rod 54 connecting the base 52 and the motor, And second processing unit group G ₁ , G ₂ A supporting column 55 provided on the side and having a sleeve 55a formed in the vertical direction, a flange member 56 slidably engaged with the sleeve 55a, and connected to the support portion 53, and a flange member 56 not shown for raising and lowering the flange member 56 Lifting mechanism.
[0030]
A rail (not shown) is laid on the base 52 for each arm support plate 51 in parallel with the longitudinal direction of the base 52, and each arm support plate 51 is slidable along the rail. . Further, when the motor built in the support portion 53 is rotated, the rotating rod 54 rotates, whereby the base 52 can rotate in the XY plane. Further, since the support portion 53 is attached to the flange member 56 that can move in the Z direction, the base 52 can also move in the Z direction.
[0031]
Vertical members 59a are attached to both sides of the distal end of the base 52, and a shielding plate 8 and a bridging member 59b that shield radiant heat between the arms 7a and 7b are attached to the vertical members 59a. A pair of optical sensors (not shown) is provided at the center of the bridging member 59b and at the tip of the base 52, thereby detecting presence / absence of the wafer W in each of the arms 7a to 7c and protrusion of the wafer W. It is supposed to be. The second main wafer transfer device 17 has the same structure as the first main wafer transfer device 16.
[0032]
The wall 57 shown in FIG. ₁ Second main transport section A on the side ₂ Of the first processing unit group G ₁ Is provided with a window 57a for transferring the wafer W to and from each of the units provided in the printer. Also, the second main transport section A ₂ Are provided with four fans 58 at the bottom.
[0033]
First processing unit group G ₁ And the cassette processing unit 11 and the second processing unit group G ₂ And the interface station 13 between the first and second processing unit groups G, respectively. ₁ , G ₂ Are provided with liquid temperature control pumps 24 and 25 for supplying a processing liquid to the processing unit group G, and clean air from an air conditioner outside the resist coating / developing processing system 1 is provided. ₁ ~ G ₅ Ducts 28 and 29 for supplying the inside of the inside are provided.
[0034]
Panel on the back side of processing station 12 and first processing unit group G ₁ -Seventh processing unit group G ₇ Can be removed for maintenance. Further, the first and second processing unit groups G ₁ , G ₂ The chemical units (CHM) 26 and 27 for supplying a chemical solution to these are provided at the bottom of each of them. Further, below the cassette station 11, a centralized control section 19 for controlling the entire resist coating / developing processing system 1 is provided.
[0035]
The interface station 13 includes a first interface station 13a on the processing station 12 side and a second interface station 13b on the exposure apparatus 14, and the first interface station 13a includes a fifth processing unit group G. ₅ The first wafer carrier 62 is disposed so as to face the opening, and a second wafer carrier 63 movable in the X direction is disposed at the second interface station 13b.
[0036]
A peripheral exposure device (WEE), an in-buffer cassette (INBR) for temporarily storing a wafer W transferred to the exposure device 14, and an unloading device from the exposure device 14 are arranged on the rear side of the first wafer transfer body 62 in order from the top. Processing unit group G in which out buffer cassettes (OUTBR) for temporarily storing the wafers W are stacked ₈ Is arranged. In addition, the transition units (TRS-G ₉ ) And a two-stage high-precision temperature control unit (CPL-G ₉ ) Are stacked in the ninth processing unit group G ₉ Is arranged.
[0037]
The first wafer carrier 62 has a fork 62a for transferring a wafer. The fork 62a is connected to the fifth processing unit group G ₅ , Eighth processing unit group G ₈ , Ninth processing unit group G ₉ Can be accessed, thereby transferring the wafer W between the units.
[0038]
The second wafer carrier 63 has a fork 63a for transferring the wafer. The fork 63a is provided with a ninth processing unit group G ₉ And the in-stage 14a and the out-stage 14b of the exposure apparatus 14 are accessible, and the wafer W is transferred between these units.
[0039]
In the resist coating / developing processing system 1 configured as described above, one wafer W is taken out from the wafer cassette (CR) by the wafer transfer mechanism 21 and is transferred to the transition unit (TRS-G) of the processing station 12. ₃ Then, the wafers W are sequentially transferred to each unit by the first and second main wafer transfer devices 16 and 17 in accordance with the order of the recipe, and a series of processes are performed on the wafers W.
[0040]
For example, after controlling the temperature of the wafer W, an adhesion process in an adhesion unit (AD) and / or formation of an antireflection film in a bottom coating unit (BARC), a heating process in a heating unit (HP), and a high-temperature heat treatment Bake processing in the unit (BAKE), temperature control of the wafer W, coating processing of the resist liquid in the resist coating unit (COT), pre-baking processing in the pre-baking unit (PAB), and peripheral exposure processing in the peripheral exposure device (WEE) The temperature of the wafer W is sequentially adjusted, and the wafer W is transferred into the exposure apparatus 14 by the second wafer transfer body 63. After exposure by the exposure device 14, the wafer W is transferred to the transition unit (TRS-G) by the second wafer carrier 63. ₉ ), A post-exposure bake process in a post-exposure bake unit (PEB), a development process in a development unit (DEV), and a post-bake process in a post-bake unit (POST) are sequentially performed to control the temperature of the wafer W. After performing the processing, the transition unit (TRS-G ₃ ) To the wafer cassette (CR) in the cassette station 11. Such a series of operations is repeated for the number of wafers in the cassette.
[0041]
Next, a developing unit (DEV) for carrying out the developing method of the present invention will be described with reference to FIGS. 5 and 6 are a cross-sectional view and a plan view showing the entire configuration of the development processing unit (DEV).
[0042]
This development processing unit (DEV) has a housing 70, an annular cup CP is arranged in the center, and a spin chuck 71 is arranged inside the cup CP. The spin chuck 71 is made of a resin including a heat conductive member, and is rotated by a drive motor 72 in a state where the wafer W is fixed and held by vacuum suction. The drive motor 72 is arranged so as to be able to move up and down at the opening of the bottom plate 70 a of the housing 70, and is coupled to a lift drive mechanism 74 made of, for example, an air cylinder and a lift guide 75 via a cap-like flange member 73 made of, for example, aluminum. ing. A cylindrical temperature control jacket 76 made of, for example, stainless steel (SUS) is attached to the side surface of the drive motor 72, and the flange member 73 is attached so as to cover the upper half of the temperature control jacket 76. Thereby, the temperature of the spin chuck 71 can be adjusted via the flange member 73 (for example, in the range of 20 ° C. to 40 ° C.). That is, the temperature of the temperature control jacket 76 is controlled by, for example, a configuration in which a fluid that is constant-temperature water is circulated or a configuration in which a thermomodule is installed in the jacket.
[0043]
During the application of the developer, the lower end of the flange member 73 is in close contact with the bottom plate 70a near the outer periphery of the opening of the bottom plate 70a, thereby sealing the inside of the unit. When the wafer W is transferred between the spin chuck 71 and the second main wafer transfer device 17, the lifting drive mechanism 74 raises the drive motor 72 and the spin chuck 71 to move the lower end of the flange member 73 to the housing. It rises from the bottom plate 70a of the body 70.
[0044]
At the bottom of the cup CP, an exhaust pipe 77 is connected to a portion near the center, and a drain pipe 78 is connected to a portion near the outside. Then, the gas in the cup CP is exhausted from the exhaust pipe 77, and the developer scattered when the developer is shaken off, the cleaning liquid for washing away the developer, and the organic solvent are discharged from the drain pipe 78. . Note that an opening 79 through which the wafer holding member 48 enters is formed on the side wall of the housing 70 of the development processing unit (DEV).
[0045]
Above the cup CP, a developer supply nozzle 81 for supplying a developer to the surface of the wafer W, and a diameter substantially equal to the diameter of a substrate for supplying a rinse liquid such as pure water to the wafer W after development. A rinsing liquid supply nozzle 84 having a length and a pure water supply nozzle 87 having a length substantially equal to the diameter of the substrate for supplying pure water for pre-wetting are provided at a supply position on the wafer W and outside the wafer W. It is provided movably between the two standby positions. The developer supply nozzle 81 is connected to a developer supply unit 83 via a developer supply pipe 82, and the rinse liquid supply nozzle 84 is connected to a rinse liquid supply unit 86 via a rinse liquid supply pipe 85. The pure water supply nozzle 87 is connected to a pure water supply unit 89 via a pure water supply pipe 88.
[0046]
The pure water used for the pre-wet may contain an optional additive (for example, a surfactant) as necessary. Further, the pure water supply nozzle 87 to be pre-wet and the rinse liquid supply nozzle 84 may be shared.
[0047]
In the case of the present embodiment, as illustrated in FIG. 7, the developer supply unit 83 includes a liquid supply mechanism 83a that supplies the developer 101 to the developer supply nozzle 81, and a developer supplied from the liquid supply mechanism 83a. The liquid temperature control mechanism 83b controls the temperature T2 of the liquid 101.
[0048]
As illustrated in FIG. 8, the pure water supply unit 89 includes a liquid supply mechanism 89a that supplies the pure water 102 to the pure water supply nozzle 87, and a temperature of the pure water 102 supplied from the liquid supply mechanism 89a. A liquid temperature control mechanism 89b for controlling T1 is provided.
[0049]
The developer supply nozzle 81 is detachably attached to the tip of the first nozzle scan arm 91, and the rinse liquid supply nozzle 84 is detachably attached to the tip of the second nozzle scan arm 92. The pure water supply nozzle 87 is detachably attached to the tip of the third nozzle scan arm 93. The first, second, and third nozzle scan arms 91, 92, and 93 extend vertically from guide rails 94 laid along the Y direction on the bottom plate 70a of the housing 70, respectively. Are attached to the upper ends of a first vertical support member 95, a second vertical support member 96, and a third vertical support member 97 which can move horizontally on a guide rail 94. The supply nozzle 84 and the pure water supply nozzle 87 move in the Y direction together with the first, second, and third vertical support members 95, 96, and 97 by a Y-axis drive mechanism (not shown). . The first, second, and third vertical support members 95, 96, and 97 can be moved in the Z direction by a Z-axis drive mechanism (not shown), and the developer supply nozzle 81, the rinse liquid supply nozzle 84, and the The pure water supply nozzle 87 is moved between a discharge position close to the wafer W and a non-discharge position above it by the movement of the corresponding vertical support member. The developer supply nozzle 81 is arranged to wait at a nozzle standby position 98, and a nozzle cleaning mechanism 99 for cleaning the developer supply nozzle 81 is provided at the nozzle standby position 98.
[0050]
As illustrated in FIG. 15, the developer supply nozzle 81 has a long shape, is disposed with its longitudinal direction being horizontal, and has a slit-shaped discharge port or / and a plurality of discharge ports 81 a on a lower surface. It is composed of a slit nozzle, and the discharged developer is formed into a band shape as a whole. When the developer is applied, the developer supply nozzle 81 is scanned along the guide rail 94 while discharging the developer in a strip shape from the discharge port 81a of the developer supply nozzle 81 located above the wafer W. By doing so, the developer is applied to the entire surface of the wafer W.
[0051]
The rinsing liquid supply nozzle 84 is constituted by a straight nozzle. After the development process is completed, the rinsing liquid supply nozzle 84 is moved onto the wafer W to supply a rinsing liquid to the resist film on which the development pattern is formed on the wafer W for cleaning. Used for processing.
Further, the pure water supply nozzle 87 is formed of a slit nozzle, similarly to the developer supply nozzle 81, and scans along a guide rail 94 while discharging pure water in a strip shape from a discharge port. For example, the pure water 102 for pre-wetting is filled.
[0052]
The supply of the developing solution, the rinsing solution and the pure water from the developing solution supply unit 83, the rinsing liquid supply unit 86 and the pure water supply unit 89, and the temperatures T1 and T2 of the developing solution and the pure water are controlled by the control interface 100a. The control section 100 controls the interface 100b and the control interface 100c.
[0053]
Further, in the case of the present embodiment, the control unit 100 has a function of controlling the entire developing unit (DEV) and controlling the developing process as illustrated in the process diagram of FIG. 8 described later.
[0054]
In the case of the present embodiment, the temperature T2 of the developing solution is controlled to be lower than the temperature T1 of the pre-wet pure water 102, as described later.
[0055]
Next, the operation of the developing process in the developing unit (DEV) configured as described above will be described with reference to the process diagram of FIG.
[0056]
A wafer W having a predetermined pattern exposed and subjected to post-exposure bake processing and cooling processing is transported by the wafer transport mechanism 21 to a position directly above the cup CP in the development processing unit (DEV), and the spin chuck 71 is moved by the elevation drive mechanism 74. For example, the surface temperature of the spin chuck 71 is controlled so as to be 28 ° C. of the flange member 73 (temperature control jacket 76), and the spin chuck 71 is vacuum-adsorbed on the spin chuck 71 by raising the temperature (step ST0).
[0057]
After that, first, pure water is discharged while scanning the pure water supply nozzle 87 from one end of the wafer W along the guide rail 94 to the other end, so that the entire surface of the wafer W is liquid-filled. As shown in FIG. 10A, a pure water paddle 102a is formed and pre-wet. At this time, the temperature T1 of the pure water paddle 102a can be set, for example, in the range of 20 ° C to 40 ° C, and is set to 28 ° C as an example (step ST1). For example, this temperature of the set T1 is set as the temperature of the spin chuck 71. Since the temperature of the wafer W is also equal to T1, the temperature of the pure water paddle 102a does not decrease on the wafer W. In this case, the temperature of the spin chuck 71 does not have to be exactly the same as T1, and the temperature of the pure water paddle 102a may be 28 ° C. Therefore, for example, the temperature of the pure water paddle 102a to be discharged is 30 ° C. The temperature of the chuck 71 may be 26 ° C.
[0058]
Next, the developing solution is ejected while scanning the developing solution supply nozzle 81 from one end of the wafer W to the other end of the wafer W along the guide rail 94, so that the developing solution is spread over the entire surface of the pure water paddle 102a. Then, a developer paddle 101a is formed as shown in FIG. At this time, in the case of the present embodiment, the value of the temperature T2 of the developer paddle 101a is lower than the temperature T1 of the pure water paddle 102a, and can be set, for example, in a range of 4 ° C. to 19 ° C. Is set to 18 ° C. (step ST2). At this time, the operation of adjusting the temperature of the spin chuck 71 by the flange member 73 (temperature adjustment jacket 76) is also stopped. Alternatively, it may be stopped immediately after the above-mentioned pre-wet.
[0059]
At this time, the water repellency of the resist (not shown) on the wafer W is reduced by the pure water paddle 102a, and the pull-back phenomenon is suppressed, so that the developer paddle 101a can be formed in a shorter time with a smaller amount of the developer. In addition, since the liquid convection due to the temperature difference is used, the impact at the time of discharging the developer is suppressed, the shock at the time of forming the developer paddle 101a is reduced, and the damage of the exposure pattern such as uneven development can be reduced.
Then, the developing is advanced by stopping the developer paddle 101a on the wafer W (step ST3). At this time, as illustrated in FIG. 10C, in the case of the present embodiment, the developer having a lower specific gravity at a lower temperature is substantially evenly distributed in the pure water paddle 102a at a higher temperature and having a lower specific gravity. And reaches an unillustrated exposure pattern on the wafer W, and the developing process proceeds uniformly over the entire surface of the wafer W. As a result, the uniformity of the line width of the exposure pattern formed on the wafer W is improved. In this case, the scan speed when applying the developer on the pure water paddle is moved at a high speed, for example, from 50 mm / s to 100 mm / s. This is because the pure water paddle higher than the temperature of the developer becomes a cushion for the penetration of the developer at the time of discharge. Further, the scan may be performed a plurality of times. For example, when the temperature of pure water is 26 ° C., the first temperature at the first speed is, for example, 80 mm / s, 20 ° C., and then the second temperature at the second speed, for example, 100 mm / s. , 15 ° C.
[0060]
FIG. 11 is a graph showing an example of the effect of the present embodiment. In FIG. 11, the bar graph and the measurement point on the left end indicate the line width of the exposure pattern in the case of the related art in which the developing process was performed with the temperature T1 of the pre-wet pure water paddle 102a and the temperature T2 of the developer paddle 101a being the same. (3σ) and CD (critical dimension: minimum resolvable dimension) value. Similarly, the center bar graph and the measurement points show the variation in the line width of the exposure pattern when the temperature T1 of the pre-wet pure water paddle 102a is set at 28 ° C. and the temperature T2 of the developer paddle 101a is set at 18 ° C. (3σ) and CD value. On the other hand, the bar graph and measurement points on the right end show the line width variation (3σ) and CD value of the exposure pattern when the developing process is performed with the temperature of the developer paddle 101a set to 23 ° C. without performing the pre-wetting.
[0061]
The variation (3σ) and the CD value are smaller and the uniformity of the line width of the exposure pattern and the resolution performance are improved in the case of the present embodiment at the center as compared with the case of the prior art at the left end. I understand. In the case where the pre-wet at the right end is not performed, the dispersion (3σ) and the CD value are the smallest, but in the case of a resist having high water repellency, a developing solution for forming the developing solution paddle by pullback phenomenon at the time of forming the developing solution paddle. As described above, there are technical problems such as an increase in the consumption of the resist and an increase in the required time, and in the developing process in the case of the resist having high water repellency, the case of the central embodiment is more comprehensive. It can be said that it is excellent.
[0062]
While the development is proceeding as described above, the developer supply nozzle 81 is moved to the nozzle standby position 98, and the rinse liquid supply nozzle 84 is moved substantially above the center of the wafer W (step ST4).
[0063]
After a lapse of a predetermined time, the developer is shaken off the wafer W by rotating the spin chuck 71 at a predetermined rotation speed (step ST5). At about the same time, the rinsing liquid supply nozzle 84 is rotated while rotating the wafer W at a predetermined rotation speed. A rinsing liquid is supplied to the resist film on the wafer W on which the development pattern has been formed, and the developing solution present on the resist film is washed away (step ST6).
[0064]
After that, the wafer W is rotated at a high speed to shake off pure water or the like and dried (step ST7).
[0065]
Next, another embodiment of the present invention will be described. In this embodiment, a case where the present invention is applied to a rinsing step will be exemplified.
[0066]
In the case of this embodiment, as the developing device (developing processing unit (DEV)), one having the configuration illustrated in FIGS. 5 and 6 of the above-described embodiment can be used, but as illustrated in FIG. The rinsing liquid supply unit 86 includes a liquid supply mechanism 86a for supplying a rinsing liquid such as an aqueous cleaning liquid and a liquid temperature control mechanism 86b for controlling the temperature of the rinsing liquid. The liquid temperature control mechanism 86b performs an operation of controlling the temperature T4 of the rinsing liquid to be lower than the temperature T3 of the developing liquid to be rinsed, as will be described later. Further, a slit nozzle is used as the rinsing liquid supply nozzle 84.
[0067]
Next, the operation of the development processing in the development processing unit (DEV) configured as described above will be described with reference to the process chart of FIG.
[0068]
A wafer W having a predetermined pattern exposed and subjected to post-exposure bake processing and cooling processing is transported by the wafer transport mechanism 21 to a position directly above the cup CP in the development processing unit (DEV), and the spin chuck 71 is moved by the elevation drive mechanism 74. By ascending, vacuum suction is performed on the spin chuck 71 (step ST10).
[0069]
Next, the developing solution is applied to the entire surface of the wafer W by discharging the developing solution while scanning the developing solution supply nozzle 81 from one end to the other end of the wafer W along the guide rail 94. As shown in FIG. 14A, a developer paddle 101a is formed (step ST11).
Then, the development is advanced by stopping the developer paddle 101a on the wafer W (step ST12).
[0070]
While the development is in progress, the developer supply nozzle 81 is moved to the nozzle standby position 98.
[0071]
The rinsing liquid supply nozzle 84 discharges the rinsing liquid while scanning from one end of the wafer W to the other end of the wafer W along the guide rail 94 (step ST13), so that the temperature T3 after development (for example, 24). The rinsing liquid 103 at a temperature T4 (for example, 20 ° C.) lower than the temperature T3 is supplied onto the developer paddle 101a (FIG. 14C) to form a rinsing liquid paddle 103a (FIG. 14B) (step ST14). It is kept still for a predetermined time (for example, 5 seconds) (step ST15). After this step ST15, a rinse liquid (for example, 15 ° C.) with a lower temperature may be applied plural times, and the standstill may be continued for a predetermined time, for example, 5 seconds.
[0072]
At this time, as illustrated in FIG. 14C, the rinsing liquid 103 having a lower specific gravity and having a higher specific gravity uniformly penetrates and replaces the developing solution 101 over the entire surface of the wafer W by thermal convection or the like. 101 and the dissolved resist residue float up and are removed from the resist surface.
[0073]
Thereafter, the developer and the rinsing liquid are shaken off from the wafer W by rotating the spin chuck 71 at a predetermined rotation speed (step ST16). At about the same time, the rinsing liquid supply nozzle 84 is rotated while rotating the wafer W at a predetermined rotation speed. A rinsing liquid is supplied to the resist film on the wafer W on which the development pattern has been formed, and the developing solution existing on the resist film is washed away (step ST17).
[0074]
After that, the wafer W is rotated at a high speed to shake off pure water or the like and dried (step ST18).
[0075]
As described above, according to the present embodiment, a rinse liquid such as an aqueous cleaning liquid at a temperature T4 lower than T3 is supplied onto the developer paddle 101a at a temperature T3 after development to form a rinse liquid paddle 103a. Rinsing is performed by gently replacing the developing solution with the temperature difference of the rinsing solution in advance, so the removal of the developing solution can be performed in a relatively short time with low impact without using a large amount of rinsing solution as in the past. It is possible to do it.
[0076]
In the description of the process illustrated in FIG. 13 described above, the case where pre-wet is not performed at the time of development is illustrated. However, it is needless to say that the process may be combined with the pre-wet process at the time of development illustrated in the first embodiment. No.
[0077]
Note that the present invention is not limited to the above embodiment, and various modifications are possible. For example, the temperature of the pre-wet pure water and the temperature of the developing solution are not limited to those exemplified in the above embodiment, and various values can be set.
[0078]
In the above embodiment, the present invention is applied to the development processing of a semiconductor wafer. However, the present invention is not limited to this, and any substrate on which a fine resist pattern is formed may be used as a liquid crystal display (LCD) substrate, a photomask substrate, or the like. Also, the present invention can be applied to development processing of other substrates.
[0079]
【The invention's effect】
As described above, according to the present invention, by reducing the water repellency of the resist with respect to the developing solution and the shock from the developing solution to the exposure pattern by the pre-wet, the consumption of the developing solution can be reduced and the exposure can be reduced. The pattern can be prevented from being damaged, and the specific gravity of the developer becomes relatively larger than that of the pure water by lowering the second temperature of the developer than the first temperature of the pre-wet pure water, Due to the difference in specific gravity, the developer on pure water penetrates uniformly into the resist on the substrate, enabling uniform development processing and improving the uniformity of the line width of the exposure pattern formed on the resist by development. can do.
[0080]
Also, in the rinsing step after the development, by rinsing a rinsing liquid such as pure water at a lower temperature than the developing liquid, the rinsing liquid uniformly penetrates into the developing liquid due to a specific gravity difference due to a temperature difference, and the rinsing liquid is used. Since the replacement of the developing solution is performed quietly and reliably, it is possible to perform a uniform rinsing process in a short time with low impact.
[Brief description of the drawings]
FIG. 1 is a plan view showing an overall configuration of a resist coating / developing system for a semiconductor wafer on which a resist coating unit for carrying out the present invention is mounted.
FIG. 2 is a front view of the resist coating / developing processing system shown in FIG.
FIG. 3 is a rear view of the resist coating / developing processing system shown in FIG. 1;
FIG. 4 is a perspective view showing a schematic structure of a main wafer transfer device provided in the resist coating / developing processing system of FIG. 1;
FIG. 5 is a cross-sectional view illustrating the overall configuration of a developing unit to which the present invention is applied.
FIG. 6 is a plan view showing a developing unit to which the present invention is applied.
FIG. 7 is a conceptual diagram illustrating a part of the developing apparatus according to the embodiment of the present invention in more detail.
FIG. 8 is a conceptual diagram illustrating a part of a developing processing apparatus according to an embodiment of the present invention in more detail.
FIG. 9 is a flowchart illustrating an example of steps of a development processing method according to an embodiment of the present invention.
FIG. 10 is a cross-sectional view illustrating an example of a developing step of the developing method according to the embodiment of the present invention in the order of steps;
FIG. 11 is a graph showing an example of an effect of the developing method according to the embodiment of the present invention.
FIG. 12 is a conceptual diagram illustrating a part of a development processing apparatus according to another embodiment of the present invention in more detail.
FIG. 13 is a flowchart illustrating an example of steps of a developing method according to another embodiment of the present invention.
FIG. 14 is a sectional view illustrating an example of a rinsing step of a developing method according to another embodiment of the present invention in the order of steps;
FIG. 15 is a perspective view illustrating a part of the developing apparatus in the embodiment of the present invention in more detail.
[Explanation of symbols]
81: Developer supply nozzle
82: Developer supply pipe
83 ... Developer supply section
83a ... liquid supply mechanism
83b ... liquid temperature control mechanism
84 rinsing liquid supply nozzle
85 ... Rinse liquid supply piping
86 rinsing liquid supply unit
86a: Liquid supply mechanism
86b: Liquid temperature control mechanism
87 ... Pure water supply nozzle
88 ... Pure water supply piping
89 ... Pure water supply unit
89a ... liquid supply mechanism
89b: Liquid temperature control mechanism
101 ... Developer
101a: Developing paddle
102 pure water
102a ...... Pure water paddle
103 ... Rinse liquid
103a Rinse liquid paddle
T1 Temperature of pre-wet pure water (first temperature)
T2: temperature of developer during development (second temperature)
T3: temperature of developer during rinsing (third temperature)
T4: temperature of rinsing liquid during rinsing (fourth temperature)
DEV: Development processing unit
W ... Semiconductor wafer

Claims (13)

A pre-wet step of applying pure water at a first temperature on the exposed resist film on the substrate;
A developing step of applying a developer at a second temperature lower than the first temperature on the pure water to develop an exposure pattern. 2. The method according to claim 1, wherein the first temperature is in a range from 20 ° C. to 40 ° C., and the second temperature is in a range from 4 ° C. to 19 ° C. 3. 3. The method according to claim 1, wherein the developing solution is applied by using a long and / or slit nozzle having a slit-like discharge port and / or a plurality of discharge ports in a longitudinal direction. 4. 3. The method according to claim 1, wherein in the developing step, the developing solution is applied a plurality of times at the same or different second temperature. 4. A developing step of supplying a developing solution to the exposed resist film on the substrate to develop an exposure pattern,
A rinsing step of applying a rinsing liquid at a fourth temperature lower than a third temperature of the developing liquid after the development onto the developing liquid to perform rinsing. The developing method according to claim 5, wherein the rinsing liquid comprises an aqueous cleaning liquid. The developing method according to claim 5, wherein in the rinsing step, the rinsing liquid is applied a plurality of times at the same or different fourth temperature. A development processing apparatus that supplies a developing solution to the exposed resist film on the substrate to develop an exposure pattern,
A substrate holding member that holds the substrate substantially horizontally,
A developer supply unit including a developer supply mechanism for supplying a developer to the substrate on the substrate holding member and a liquid temperature control mechanism for controlling the temperature of the developer;
A pure water supply unit including a pure water supply mechanism for supplying pure water to the substrate on the substrate holding member and a liquid temperature control mechanism for controlling the temperature of the pure water,
After performing a pre-wet to paddle the pure water at a first temperature on the resist film after exposure on the substrate by the pure water supply unit, the first supply of the first water is performed on the pure water by the developer supply unit. A control unit for performing an operation of paddle-developing the developing solution at a second temperature lower than the temperature to develop an exposure pattern. The developing apparatus according to claim 8, wherein the first temperature is in a range of 20C to 40C, and the second temperature is in a range of 4C to 19C. The developing apparatus according to claim 8, wherein the substrate holding member is maintained at the first temperature. 9. The developing solution supply unit according to claim 8, further comprising a slit nozzle having a long and slit-shaped discharge port and / or a plurality of discharge ports in a longitudinal direction for supplying the developing liquid to the substrate. Alternatively, the development processing apparatus according to claim 9. A development processing apparatus that supplies a developing solution to the exposed resist film on the substrate to develop an exposure pattern,
A substrate holding member for holding the substrate substantially horizontally,
A developer supply unit including a developer supply mechanism for supplying a developer to the substrate on the substrate holding member and a liquid temperature control mechanism for controlling the temperature of the developer;
A rinse liquid supply unit including a rinse liquid supply mechanism that supplies a rinse liquid to the substrate on the substrate holding member and a liquid temperature control mechanism that controls the temperature of the rinse liquid;
After developing the exposure pattern by supplying the developing solution to the exposed resist film on the substrate from the developing solution supply unit, rinsing at a fourth temperature lower than the third temperature of the developing solution after development. A control section for supplying a liquid from the rinsing liquid supply section onto the developer to perform an rinsing operation. 13. The development processing apparatus according to claim 12, wherein the rinsing liquid comprises an aqueous cleaning liquid.

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