JP2004282940A - Semiconductor element module and ac-ac power converter - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor element module reduced in potential difference between common connecting electrodes of a plurality of reverse blocking switching elements, and a power converter reduced in size and low in price using the module. <P>SOLUTION: The semiconductor element module can control the passing and blocking of a current that flows toward the second electrode from the first electrode by using a voltage applied between the second electrode and a control electrode and an inflow current to the control electrode, and is composed of IGBTs or the like that constantly block currents that flow toward the first electrode from the second electrode. Emitters of the three IGBTs 100 are commonly connected to one another and connected to a single output terminal (for example, a terminal U), and collectors of the three IGBTs 100 are connected to input terminals R, S and T of respective phases, thus constituting the module 1. A positive-side unit 40P and a negative-side unit 40N that are constituted of the modules 1 to 6 of the same constitutions are connected between AC input/output terminals, thus obtaining the direct conversion type power converter. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor element module using a semiconductor switching element having a reverse blocking capability such as an IGBT (insulated gate bipolar transistor), and a polyphase alternating current having a predetermined magnitude and frequency using the module. The present invention relates to an AC-AC power converter that directly converts a voltage.
[0002]
[Prior art]
FIG. 4 is a circuit diagram showing a conventional technology of a semiconductor element module made of an IGBT and an AC-AC power converter using this module.
In FIG. 4, 101 to 109 are semiconductor element modules each including two IGBTs 100. Here, the illustrated IGBT 100 can control the flow and interruption of current from the collector (also abbreviated as C) to the emitter by applying a voltage between the gate and the emitter (abbreviated as G and E, respectively). In addition, unlike a general IGBT having no reverse blocking capability, it operates as a so-called reverse blocking type semiconductor switching element which is always in a cutoff state for a current flowing from an emitter to a collector.
[0003]
Each of the semiconductor element modules 101 to 109 is configured by connecting two IGBTs 100 in anti-parallel, and thus constitutes a bidirectional switch that can control the flow of current in both forward and reverse directions.
Here, as the semiconductor switching element having the reverse blocking ability, a reverse conducting element or an element having no reverse withstand voltage and a diode may be connected in series, and the semiconductor switching element may have a reverse blocking ability as a whole. is there.
[0004]
R, S, and T are AC input terminals connected to a three-phase AC power supply, and the terminal R is connected to one end of one of the modules 101, 104, and 107 (one end of a connection point between the two IGBTs 100). S is connected to one end of each of the modules 102, 105, and 108, and the terminal T is connected to one end of each of the modules 103, 106, and 109.
Further, U, V, and W are AC output terminals connected to a three-phase load. The terminal U is connected to the other ends of the modules 101 to 103 (the other ends of the connection points between the two IGBTs 100). Is connected to the other ends of the modules 104 to 106, and the terminal W is connected to the other ends of the modules 107 to 109.
[0005]
Reference numerals 110 to 127 denote gate drive circuits (abbreviated as GD) for applying a gate-emitter voltage (hereinafter simply referred to as a gate voltage) to each IGBT 100, and power is supplied from gate power supplies 128 to 133, respectively. . The gate driving circuits 110 to 127 output a gate voltage in response to a signal from a gate signal line (not shown).
[0006]
The power conversion device having the above configuration converts a three-phase AC voltage input from the terminals R, S, and T to a DC voltage by performing a switching operation of a predetermined IGBT 100 in the modules 101 to 109 by the gate drive circuits 110 to 127. This is known as a matrix converter that directly converts the voltage into a three-phase AC voltage having a predetermined magnitude and frequency and outputs the voltage from terminals U, V, and W without performing the operation.
[0007]
Here, since the emitters of the two IGBTs 100 in each module are connected to the AC input terminals R, S, T or the AC output terminals U, V, T, the potentials are different from each other. Therefore, each IGBT 100 needs to be driven by different gate power supplies whose outputs are insulated from each other.
However, the number of gate power supplies is not necessarily required by the number of all IGBTs 100 (the number of gate drive circuits 110 to 127). In principle, the same gate power supply is used for IGBTs 100 (gate drive circuits) having a common emitter potential. Gate power supply can be used. In the example of FIG. 4, the number of IGBTs 100 is 18 in total, whereas three IGBTs 100 having a common emitter potential exist for each of the terminals R, S, T, U, V, and T. Six gate power supplies 128 to 133 corresponding to the number of these terminals are sufficient.
[0008]
As shown in FIG. 4, a power converter that simplifies the circuit configuration by sharing a gate power supply for a plurality of IGBTs having a common emitter potential is described in Patent Document 1 below. ing.
[0009]
[Patent Document 1]
JP 2001-61275 A ([0029], [0040], FIG. 1, FIG. 5, etc.)
[0010]
[Problems to be solved by the invention]
In the power converter shown in FIG. 4, even if the emitters are connected in common, there is actually a wiring inductance corresponding to the length of the common connection line, and each wiring inductance and the current flowing therethrough Since the induced voltage, which is the product of the rate of change of the induced voltage, differs, a potential difference may occur between the emitters. In particular, in the circuit configuration of FIG. 4, the common connection line on the side of the AC input terminals R, S, and T becomes long, so that the wiring inductance also increases, and the voltage generated in the wiring inductance disturbs the gate voltage, and the device malfunctions. Or deterioration of performance. In order to drastically solve these problems, a gate power supply must be provided for each gate drive circuit, and as a result, there is a problem that the device becomes large and the cost increases.
[0011]
Therefore, the present invention shortens the common connection line of a plurality of reverse blocking semiconductor switching elements to make the wiring length from an AC output terminal or an AC input terminal to a common connection electrode such as an emitter substantially equal, thereby causing a wiring inductance. It is an object of the present invention to provide a semiconductor device module in which the potential difference between the common connection electrodes is reduced, and a small and inexpensive AC-AC power converter using the semiconductor device module.
[0012]
[Means for Solving the Problems]
In order to solve the above problem, the semiconductor element module according to the first aspect of the present invention controls the flow of current from the first electrode to the second electrode and the interruption of the current from the first electrode to the voltage applied between the second electrode and the control electrode. In a semiconductor device module including a plurality of reverse blocking semiconductor switching devices that can be controlled by a current flowing into a control electrode, and always block a current flowing from a second electrode to a first electrode,
The second electrodes of the plurality of reverse blocking semiconductor switching elements are commonly connected to each other and connected to a single output terminal, and the first electrodes of the plurality of reverse blocking semiconductor switching elements are respectively connected to individual input terminals. Connected.
[0013]
In the semiconductor device module according to the present invention, the flow of current from the first electrode to the second electrode is interrupted by a voltage applied between the first electrode and the control electrode or a current flowing into the control electrode. In a semiconductor device module including a plurality of reverse blocking semiconductor switching devices that are controllable and always block a current flowing from a second electrode to a first electrode,
The first electrodes of the plurality of reverse blocking semiconductor switching elements are commonly connected to each other and connected to a single input terminal, and the second electrodes of the plurality of reverse blocking semiconductor switching elements are respectively connected to individual output terminals. Connected.
[0014]
The AC-AC power converter according to claim 3 is an AC-AC power converter that directly converts a polyphase AC voltage into a polyphase AC voltage having a predetermined magnitude and frequency by switching a semiconductor switching element.
2. The semiconductor device module according to claim 1, comprising a number of reverse blocking semiconductor switching elements equal to the number of input phases, and the module being provided in a number equal to the number of output phases. A positive-side unit in which the first electrode of the element is connected to the AC input terminal of each phase, and the second electrode commonly connected to each module is connected to the AC output terminal of each phase;
2. The semiconductor device module according to claim 1, comprising a number of reverse blocking semiconductor switching elements equal to the number of output phases, and the module being provided in a number equal to the number of input phases. A negative unit in which a first electrode of the element is connected to an AC output terminal of each phase, and a second electrode commonly connected to each module is connected to an AC input terminal of each phase. It is.
[0015]
The AC-AC power converter according to claim 4, wherein the AC-AC power converter directly converts the polyphase AC voltage into a polyphase AC voltage having a predetermined magnitude and frequency by switching of a semiconductor switching element.
The semiconductor device module according to claim 2 is constituted by the number of reverse blocking semiconductor switching elements equal to the number of output phases, and the modules are provided by the number equal to the number of input phases, and each semiconductor switching module in these modules is provided. A positive-side unit in which the second electrode of the element is connected to the AC output terminal of each phase, and the first electrode commonly connected to each module is connected to the AC input terminal of each phase;
A semiconductor device module according to claim 2 is constituted by a number of reverse blocking semiconductor switching elements equal to the number of input phases, and the modules are provided by a number equal to the number of output phases, and each semiconductor switching module in these modules is provided. A negative unit in which a second electrode of the element is connected to an AC input terminal of each phase, and a first electrode commonly connected to each module is connected to an AC output terminal of each phase. It is.
[0016]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. First, FIG. 1 is a circuit configuration diagram showing an embodiment of the invention according to claims 1 and 3.
In FIG. 1, reference numerals 1 to 6 denote semiconductor element modules, each of which incorporates three IGBTs 100, which are reverse blocking semiconductor switching elements described in the description of FIG. 4, and which have the same emitter. Connected and configured.
Here, the collector of the IGBT 100 in the present embodiment corresponds to the first electrode of the reverse blocking type semiconductor switching element in the claims, the emitter corresponds to the second electrode, and the gate corresponds to the control electrode.
[0017]
The three modules 1 to 3 constitute the positive unit 40P, and the collectors of the three IGBTs 100 in each of the modules 1 to 3 are connected to AC input terminals R, S, and T, respectively. That is, three modules 1 to 3 are connected in parallel to the AC input terminals R, S, and T.
The commonly connected emitters of the IGBTs 100 in each of the modules 1 to 3 are connected to AC output terminals U, V, and W, respectively.
Further, gate drive circuits 7 to 15 are individually connected between the gate and the emitter of the IGBT 100 in each of the modules 1 to 3, and these gate drive circuits 7 to 15 are provided one-to-one for each of the modules 1 to 3. , Power is supplied from the corresponding gate power supplies 25, 26, 27, respectively.
[0018]
On the other hand, the remaining three modules 4 to 6 constitute a negative unit 40N, and the collectors of the three IGBTs 100 in each of the modules 1 to 3 are connected to AC output terminals U, V, and W, respectively. . That is, three modules 4 to 6 are connected in parallel to the AC output terminals U, V, and W.
The commonly connected emitters of the IGBTs 100 in the modules 4 to 6 are connected to AC input terminals T, S, and R, respectively.
Further, gate drive circuits 16 to 24 are individually connected between the gate and the emitter of the IGBT 100 in each of the modules 4 to 6, and these gate drive circuits 16 to 24 are individually connected to the individual modules 4 to 6. Power is supplied from the corresponding gate power supplies 28, 29, 30 respectively.
[0019]
In the above configuration, each of the modules 1 to 6 does not constitute a bidirectional switch unlike the modules 101 to 109 in FIG. 4, and each of the modules 1 to 6 has one of the collectors (first electrodes) of the three IGBTs 100 and the emitter (second electrode). This constitutes a unidirectional switch that allows current to flow in the direction of the electrode.
Further, in order to provide bidirectionality as the whole power converter, a positive unit 40P for flowing a current from the AC input terminals R, S, T to the AC output terminals U, V, W, and Conversely, it comprises a negative unit 40N for flowing current from the AC output terminals U, V, W to the AC input terminals R, S, T.
[0020]
As is already clear, in the positive unit 40P, each of the modules 1 to 3 is constituted by the number of IGBTs 100 equal to the number of input phases, and the number of modules 1 to 3 is equal to the number of output phases. In the negative side unit 40N, each of the modules 4 to 6 is configured by the number of IGBTs 100 equal to the number of output phases, and the number of modules 4 to 6 is equal to the number of input phases.
In this embodiment, since the number of input phases = the number of output phases = 3, all of the modules 1 to 6 are each configured by three IGBTs 100, and the number of modules in the positive unit 40P and the negative unit 40N is also 3 respectively. It is individual.
[0021]
Here, FIG. 2 is an equivalent circuit diagram of the embodiment of FIG. 1. In FIG. 1, the gate power supplies 25 to 30 and the gate drive circuits 7 to 24 are omitted, and the 18 IGBTs 100 of FIG. Are represented as unidirectional switches S _{1 to} S ₁₈ by series connection with the above.
FIG. 3 is an equivalent circuit diagram of the prior art shown in FIG. 4, in which the gate power supplies 128 to 133 and the gate drive circuits 110 to 127 in FIG. 4 are omitted, and the two IGBTs 100 are connected in antiparallel in FIG. The modules 101 to 109 are represented by single bidirectional switches 101 to 109, respectively.
[0022]
In these figures, the IGBTs S ₁ and S ₁₆ in FIG. 2 correspond to the module (bidirectional switch) 101 in FIG. 3, the IGBTs S ₂ and S _{13 correspond} to the module 102, and the IGBTs S ₃ and S _{10 correspond} to the module 103. likewise the IGBT S _{4, S 17} modules 104, the same IGBT S _{5, S 14} modules 105, similarly to the IGBT S _{6, S 11} modules 106, similarly IGBT S _{7, S 18} is the module 107, as well It is clear that the IGBTs S ₈ and S _{15 correspond} to the module 108, and the IGBTs S ₉ and S _{12 also} correspond to the module 109.
[0023]
That is, in the embodiment shown in FIGS. 1 and 2, the positive unit 40P (modules 1 to 3 or IGBT S ₁₎ connected between the AC input terminals R, S, T and the AC output terminals U, V, W. by to S ₉₎ and the negative side unit 40N (modules 4-6 or IGBT S ₁₀ ~S _18), AC - matrix converter as AC power converting apparatus is constituted by a switching operation of the IGBT S ₁ to S _18, the terminal The three-phase AC voltage input from R, S, and T is directly converted into a three-phase AC voltage having a predetermined magnitude and frequency without being converted into a DC voltage, and output from terminals U, V, and W.
[0024]
As described above, in this embodiment, the emitters of the three IGBTs 100 are commonly connected to form one semiconductor element module, and the three semiconductor element modules 1 to 3 configure the positive-side unit 40P. Each emitter common connection line is connected to each of the AC output terminals U, V, W.
Similarly, the emitters of the three IGBTs 100 are commonly connected to form one semiconductor element module, the three semiconductor element modules 4 to 6 constitute the negative unit 40N, and the common emitter connection lines are connected to each other. They are connected to AC input terminals R, S, T, respectively.
[0025]
With such a configuration, the emitters of the IGBT 100 can be commonly connected with a very short wiring length, whereby the wiring lengths from the AC output terminals U, V, W to each of the emitters can be made substantially equal. For this reason, it is possible to reduce the wiring inductance itself of the common connection line, and to minimize the potential difference of each emitter caused by the wiring inductance. Therefore, unlike the related art, there is no possibility that the device malfunctions or the performance is deteriorated due to the disturbance of the gate voltage.
Further, in an AC-AC power conversion device such as a matrix converter using these semiconductor element modules 1 to 6, it is not necessary to provide a gate power supply for each gate drive circuit, so that an increase in the size of the device and an increase in cost are avoided. be able to.
[0026]
In the above-described embodiment, the semiconductor element module in which the second electrodes of the semiconductor switching elements (for example, the emitter of the IGBT 100) are commonly connected, and the AC-AC power conversion device using this module have been described.
However, the present invention is ideally applicable to a semiconductor element module in which the first electrode of the semiconductor switching element (for example, the collector of the IGBT 100) is commonly connected, and to an AC-AC power converter using the module. These semiconductor element module and AC-AC power converter correspond to the inventions according to claims 2 and 4, respectively.
At present, there is no device controlled by the gate-collector voltage, but realization is expected in the near future.
[0027]
That is, as an embodiment of the semiconductor device module according to claim 2, the collectors of the three IGBTs 100 are commonly connected to each other and connected to a single input terminal (for example, the terminal R). A semiconductor device module in which the emitters are connected to individual output terminals (terminals U, V, W) can be assumed.
[0028]
Further, as an embodiment of the AC-AC power conversion device according to claim 4, a power conversion device that performs direct conversion by connecting a plurality of the semiconductor element modules according to claim 2 between an AC input terminal and an AC output terminal. There is.
Here, in the embodiment of the AC-AC power conversion device according to claim 4, for example, all the diodes in each of the modules 1 to 6 in FIG. 2 are connected and replaced in the opposite direction (the module in that case is according to claim 2). This can be easily realized by using terminals U, V, and W as AC input terminals and terminals R, S, and T as AC output terminals. In this case, the collectors of the IGBTs 100 can be commonly connected to each other with a very short wiring length, and the wiring lengths (wiring inductances) from the AC input terminals U, V, W to the respective collectors are substantially equal, and the collectors have the same potential. Becomes possible.
[0029]
In the above embodiment, an example in which an IGBT is used as a semiconductor switching element has been described. However, the semiconductor element module according to the present invention performs the first or second flow of current from the first electrode to the second electrode. A reverse blocking type semiconductor switching element which can be controlled by an applied voltage between the two electrodes and the control electrode or a current flowing into the control electrode, and always interrupts a current flowing from the second electrode to the first electrode. If there is, a module using a semiconductor switching element such as a power transistor (ordinary bipolar transistor), a thyristor, and an FET is also included.
Further, as described above, it is needless to say that the present invention can obtain the same effect as that of the above-described embodiment by using a module having the same number of semiconductor switching elements as the number of input phases even when the AC input is other than three phases. .
[0030]
【The invention's effect】
As described above, according to the semiconductor element module of the present invention, the common connection line of the reverse blocking type semiconductor switching element is shortened to extend from the AC output terminal or the AC input terminal to the common connection electrode such as each emitter or each collector. The wiring lengths can be made substantially equal, whereby it is possible to reduce the potential difference between the common connection electrodes due to the wiring inductance. For this reason, there is an effect that a malfunction of the device and a decrease in performance due to the disturbance of the driving voltage can be prevented.
Further, in the AC-AC power converter using the semiconductor element module, it is not necessary to provide a power supply for each drive circuit of the element, so that an increase in the size of the apparatus and an increase in cost can be avoided.
[Brief description of the drawings]
FIG. 1 is a circuit diagram showing an embodiment of the present invention.
FIG. 2 is an equivalent circuit diagram of the embodiment of FIG.
FIG. 3 is an equivalent circuit diagram of the prior art of FIG.
FIG. 4 is a circuit diagram showing a prior art of a semiconductor element module and an AC-AC power converter using the module.
[Explanation of symbols]
1 to 6: semiconductor element modules 7 to 24: gate drive circuits 25 to 30: gate power supply 40P: positive side unit 40N: negative side unit 100, S _{1 to} S ₁₈ : IGBT
R, S, T: AC input terminals U, V, W: AC output terminals

Claims (4)

The flow of current from the first electrode to the second electrode and the interruption of the current can be controlled by a voltage applied between the second electrode and the control electrode or a current flowing into the control electrode, and from the second electrode. In a semiconductor device module including a plurality of reverse blocking semiconductor switching devices that always block a current flowing to a first electrode,
The second electrodes of the plurality of reverse blocking semiconductor switching elements are commonly connected to each other and connected to a single output terminal, and the first electrodes of the plurality of reverse blocking semiconductor switching elements are respectively connected to individual input terminals. A semiconductor element module which is connected. The flow of current from the first electrode to the second electrode and the interruption of the current can be controlled by a voltage applied between the first electrode and the control electrode or a current flowing into the control electrode, and from the second electrode. In a semiconductor device module including a plurality of reverse blocking semiconductor switching devices that always block a current flowing to a first electrode,
The first electrodes of the plurality of reverse blocking semiconductor switching elements are commonly connected to each other and connected to a single input terminal, and the second electrodes of the plurality of reverse blocking semiconductor switching elements are respectively connected to individual output terminals. A semiconductor element module which is connected. In an AC-AC power converter that directly converts a polyphase AC voltage into a polyphase AC voltage having a predetermined magnitude and frequency by switching a semiconductor switching element,
2. The semiconductor device module according to claim 1, comprising a number of reverse blocking semiconductor switching elements equal to the number of input phases, and the module being provided in a number equal to the number of output phases. A positive-side unit in which the first electrode of the element is connected to the AC input terminal of each phase, and the second electrode commonly connected to each module is connected to the AC output terminal of each phase;
2. The semiconductor device module according to claim 1, comprising a number of reverse blocking semiconductor switching elements equal to the number of output phases, and the module being provided in a number equal to the number of input phases. A negative unit in which the first electrode of the element is connected to the AC output terminal of each phase, and the second electrode commonly connected to each module is connected to the AC input terminal of each phase;
An AC-AC power converter, comprising: In an AC-AC power converter that directly converts a polyphase AC voltage into a polyphase AC voltage having a predetermined magnitude and frequency by switching a semiconductor switching element,
The semiconductor device module according to claim 2 is constituted by the number of reverse blocking semiconductor switching elements equal to the number of output phases, and the modules are provided by the number equal to the number of input phases, and each semiconductor switching module in these modules is provided. A positive-side unit in which the second electrode of the element is connected to the AC output terminal of each phase, and the first electrode commonly connected to each module is connected to the AC input terminal of each phase;
A semiconductor device module according to claim 2 is constituted by a number of reverse blocking semiconductor switching elements equal to the number of input phases, and the modules are provided by a number equal to the number of output phases, and each semiconductor switching module in these modules is provided. A negative unit in which the second electrode of the element is connected to the AC input terminal of each phase, and the first electrode commonly connected to each module is connected to the AC output terminal of each phase;
An AC-AC power converter, comprising:

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