JP2004282037A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of suppressing a reduction in the deflecting strength of a chip and preventing cracking of a semiconductor chip in an assembling process, a reliability test, etc. <P>SOLUTION: The processes of forming semiconductor devices in a semiconductor wafer 21 and making dicing cuts in the semiconductor wafer along dicing lines 24 are implemented. Then, a laser beam 28 is irradiated on the dicing-processed regions 26 of the semiconductor wafer to fuse or evaporate the cut streaks formed by the dicing. Because the irradiation of a laser beam onto the upper edges and side surfaces of the semiconductor chips 25-1, 25-2, 25-3, etc.after the dicing process for dividing the semiconductor wafer causes fusion or evaporation of the cut sections entailing elimination of the strain and chipping originated from the cut streaks, it is enabled to enhance the deflecting strength of a semiconductor chip. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus, and more particularly to a dicing step and a dicing apparatus for dividing a semiconductor wafer to form semiconductor chips.

  Conventionally, a dicing process in a manufacturing process of a semiconductor device is performed, for example, as shown in FIGS. 10 (a), 10 (b) and 10 (c). That is, as shown in FIGS. 10A and 10B, the diamond wafer (grinding stone) 13 is moved along the dicing lines 12-1, 12-2,... Use to cut. Next, the wafer 11 is rotated by 90 °, and further diced in a direction orthogonal to the dicing direction as shown in FIG. 10C, whereby the individual semiconductor chips 14-1, 14-2, and 14-3 are formed. , ...

  The dicing process includes a full-cut method for completely cutting the wafer 11 and a half-cut method for dicing to about half the thickness of the wafer 11 or dicing to a depth where the wafer 11 remains about 30 μm.

  In the half-cut method, a dividing operation is required after dicing, and the wafer 11 is sandwiched between flexible films or the like, and divided by applying an external force with a roller. When the sheet is attached to the pressure-sensitive adhesive sheet before dicing, the sheet is divided by applying an external force with a roller or the like through the sheet.

  The divided wafer 11 is mounted on a lead frame for each chip 14-1, 14-2, 14-3,... By a die bonding process. At this time, the back surface of the adhesive sheet is pushed up by the pickup needle for each of the chips 14-1, 14-2, 14-3,..., And the needle is directly brought into contact with the back surface of the chip through the adhesive sheet. Lift and separate each chip from the adhesive sheet. The separated chip is conveyed by sucking the chip surface with a tool called a collet, and mounted on an island of a lead frame.

  Then, a wire bonding step is performed to electrically connect the pads of the chips 14-1, 14-2, 14-3,... To the inner lead portions of the lead frame. When mounting the chip on a TAB tape, each pad of the chip is electrically connected to a lead of the TAB tape using a heated bonding tool.

  Thereafter, a packaging process is performed, and the semiconductor device is sealed in a resin or ceramic package to complete the semiconductor device.

  However, in the above-described manufacturing method, in a dicing process, a chip called distortion or chipping occurs on a side surface of a semiconductor chip due to a cutting streak, and the die strength of the chip decreases. For this reason, when a pressure applied in a pickup process performed prior to a mounting process to a lead frame or a TAB tape or a stress generated due to a difference in thermal expansion characteristics between a package material and a chip is applied, stress concentration to distortion and chipping occurs. As a result, the chip is broken starting from the distortion and chipping.

  In recent years, in order to incorporate a semiconductor chip into a thin package such as a card, for example, when cutting a semiconductor wafer, the back surface of the wafer's pattern formation surface (semiconductor element formation surface) is ground with a grindstone and polished with free abrasive grains. For example, a manufacturing method is adopted in which the thickness is reduced by dicing and then dicing and cutting. Further, in order to form a thinner chip, a technique called a pre-dicing (also called DBG, abbreviation of Dicing Before Grinding) method has been proposed (for example, see Patent Document 1). In the pre-dicing method, after a cut (half cut) is made to a predetermined depth from the element formation surface side of the wafer, the wafer is ground and the individual surface and the thickness are simultaneously reduced by grinding the back surface.

  In such a technique, chipping that occurs on the back surface of the chip or on the edge portion between the side surface and the back surface can be removed by polishing the back surface of the semiconductor wafer. And chipping cannot be removed. For this reason, the reduction of the bending strength due to the thinning of the chip is inevitable, and the problem of the semiconductor chip being broken in the assembly process and the reliability test before packaging the semiconductor chip and causing defective products is completely eliminated. It cannot be solved.

Thus, recently, a technique of cutting a semiconductor wafer by irradiating a laser beam instead of dicing by mechanical cutting as described above has attracted attention (for example, see Patent Document 2). Cutting by laser beam irradiation can eliminate streaks and chipping due to mechanical cutting. However, a large output is required for the laser beam, and damage to the side surface of the chip due to recrystallization after melting or an uneven surface is formed, and a reduction in bending strength is inevitable. In addition, the material melted by the irradiation of the laser beam is scattered and contaminates the surface of the chip. Furthermore, when cutting a semiconductor wafer through an adhesive sheet, it is necessary to irradiate the laser beam twice while changing the focal position (wafer depth method) of the laser beam, which causes a problem that the dicing process is complicated.
JP-A-61-112345 JP-A-2001-144037

  As described above, in the conventional semiconductor device manufacturing method and semiconductor device manufacturing apparatus, there is a problem that distortion or chipping occurs due to cutting streaks on the back surface or side surface of the semiconductor chip, and the die strength of the chip is reduced. there were.

  Also, by performing backside grinding or polishing on the semiconductor wafer, cutting streaks on the backside can be removed, but cutting streaks generated on the side surface of the chip cannot be removed, so there is a limit in improving the die strength of the chip. There was a problem.

  Furthermore, by cutting the semiconductor wafer by irradiating a laser beam, the problem of cutting streaks can be solved.However, it is necessary to irradiate a high-power laser beam. However, there is a problem that the bending strength is inevitably reduced due to the formation of ridges.

  The present invention has been made in view of the above circumstances, and its object is to suppress a decrease in die strength of a chip and prevent a semiconductor chip from being cracked in an assembling process or a reliability test. An object of the present invention is to provide a method for manufacturing a semiconductor device.

  It is another object of the present invention to provide an apparatus for manufacturing a semiconductor device, which can suppress a reduction in die strength of a chip due to dicing.

  According to one aspect of the present invention, a step of forming a semiconductor element in a semiconductor wafer, a step of forming a groove by half-cut dicing the semiconductor wafer along a dicing line, and a step of forming a groove in a dicing region of the semiconductor wafer Irradiating a laser beam, the step of melting or vaporizing the cutting streak formed by dicing, the step of applying an adhesive tape to the surface of the semiconductor wafer on which the semiconductor element is formed, and the back surface of the semiconductor element formation surface, Grinding the semiconductor device to at least a depth reaching the groove.

  According to one aspect of the present invention, a step of forming a semiconductor element in a semiconductor wafer, a step of forming a groove by half-cut dicing the semiconductor wafer along a dicing line, A step of attaching an adhesive tape to a formation surface of the semiconductor element, a step of grinding the back surface of the formation surface of the semiconductor element to at least a depth reaching the groove, and the semiconductor wafer is divided and formed in the grinding step. Irradiating a laser beam to the dicing region of the semiconductor chip to melt or vaporize a cutting streak formed by dicing.

  According to the above manufacturing method, after dicing, the dicing area is irradiated with a laser beam to be melted or vaporized and the side surface is processed, so that the distortion and chipping due to the cutting streak formed on the side surface of the semiconductor chip are reduced. It can be removed, and a decrease in bending strength can be suppressed. Therefore, it is possible to prevent the semiconductor chip from being cracked in an assembling process, a reliability test, or the like.

  Further, according to one aspect of the present invention, a dicer for forming a groove by half-cut dicing a semiconductor wafer along a dicing line, and a tape bonding method for bonding an adhesive tape to a surface of the semiconductor wafer on which the semiconductor element is formed Attaching device, a grinding device that grinds the back surface of the semiconductor element formation surface of the semiconductor wafer to at least the depth reaching the groove formed by the half cut, and the irradiation position of the laser beam corresponding to the dicing position by the dicer. A laser irradiation device that moves and melts or vaporizes the cutting streak formed in the dicing region of the semiconductor wafer.

  According to the manufacturing apparatus as described above, it is possible to continuously perform the processing on the side surface of the chip by the irradiation of the laser beam after the dicing without adjusting the alignment of the dicing area and the irradiation position of the laser beam by the dicer. As a result, a decrease in the die strength of the chip can be suppressed without complicating the dicing process.

  According to the present invention, it is possible to obtain a method of manufacturing a semiconductor device capable of suppressing a decrease in bending strength of a chip and preventing a semiconductor chip from being broken in an assembling process, a reliability test, or the like.

  Further, a semiconductor device manufacturing apparatus capable of suppressing a decrease in die strength of a chip due to dicing can be obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[First Embodiment]
1 and 2 are for explaining a method of manufacturing a semiconductor device and an apparatus for manufacturing a semiconductor device according to a first embodiment of the present invention. FIG. 1 shows a dicing step, and FIG. 2 shows a dicing region. 2 shows a process of processing a dicing area by irradiation with a laser beam.

  First, various semiconductor elements are formed in a semiconductor wafer by a well-known manufacturing process.

  Next, an adhesive sheet 22 is attached to the back surface of the element forming surface of the semiconductor wafer 21 on which the element formation has been completed by a sheet attaching device, and the adhesive sheet 22 is fixed to the dicing table by suction. Then, from the main surface side of the semiconductor wafer 21, dicing is performed along a dicing line 24 using a dicer (for example, a diamond blade 23) to cut into individual semiconductor chips 25-1, 25-2, 25-3,. .

  Thereafter, as shown in FIG. 2, a laser beam 28 is applied from a laser irradiation device 27 to the dicing area 26 by the diamond blade 22 to melt or vaporize the surface of the dicing area 26 on the side surface of the chip. The laser irradiation device 27 moves in the direction of the arrow shown in the figure, and irradiates a laser beam 28 along the dicing area 26.

In the laser irradiation apparatus 27, YAG-THG laser, such as YVO4 laser and CO ₂ laser can be used. According to an experiment performed using a YAG-THG laser (wavelength: 355 nm), the Qsw frequency was set to 50 kHz, the average power was set to about 1.5 W, the melting diameter was set to about 15 μm, and the scanning speed (moving speed) was 5 mm / sec. It was confirmed that the surface could be melted or vaporized to sufficiently remove distortion and chipping due to cutting streaks. In an experiment performed under different conditions, the effect was obtained when the wavelength of the laser beam 28 was 266 nm to 1064 nm, the average output was 0.8 to 4.5 W, and the scanning speed was 1 to 400 mm / sec. When the output of the laser beam is small and the scanning speed is high, the cut surface is melted and recrystallized. On the other hand, when the output of the laser beam is large and the scanning speed is low, the cut surface is vaporized. Also, if the wavelength of the laser beam is short, the sharpness becomes sharp and it is hard to damage. By setting conditions such as the wavelength, average output, and scanning speed of the laser beam 28 in accordance with the size and thickness of the semiconductor wafer or chip, the surface condition can be optimized.

  After that, it is the same as the known method of manufacturing a semiconductor device. A die bonding process is performed to mount the chips 25-1, 25-2, 25-3,... On a lead frame. At this time, the back surface of the adhesive sheet 22 is pushed up by the pickup needle for each of the chips 25-1, 25-2, 25-3,... And penetrated through the adhesive sheet 22 (not necessarily penetrated). The needle is brought into direct contact, and further lifted to separate each chip from the adhesive sheet 22. The separated chip is conveyed by sucking the chip surface with a collet and mounted on an island of a lead frame.

  Subsequently, a wire bonding step is performed to electrically connect each pad of the chip and the inner lead portion of the lead frame. When the chips 25-1, 25-2, 25-3,... Are mounted on the TAB tape, the pads of the chip and the leads of the TAB tape may be electrically connected using a heated bonding tool. .

  Thereafter, a packaging process is performed, and the semiconductor device is sealed in a resin or ceramic package to complete the semiconductor device.

  According to such a manufacturing method, the dicing region 26 of the semiconductor chips 25-1, 25-2, 25-3,... Is irradiated with the laser beam 28 to perform a melting process or a vaporizing process. Distortion and chipping due to streaks during cutting can be removed, and the die strength of the chip can be improved. Therefore, it is possible to prevent a semiconductor chip from being broken and a defective product from being generated in an assembling process (pickup process or resin sealing process) until a semiconductor chip is packaged or in a reliability test. Further, compared to dicing by laser beam irradiation, contamination of the chip surface due to adhesion of evaporants can be reduced.

  FIG. 3A is a photomicrograph of a side surface of a semiconductor chip formed by the conventional manufacturing method and manufacturing apparatus, and FIG. 3B is a side view of a semiconductor chip formed by the manufacturing method and manufacturing apparatus of the present embodiment. It is a micrograph. As is clear from comparison of FIGS. 3A and 3B, a large number of cutting streaks during dicing are present on the side surface of the semiconductor chip formed by the conventional manufacturing method and manufacturing apparatus. On the other hand, the side surface of the semiconductor chip surface-treated with the laser beam is smooth. Therefore, concentration of stress is unlikely to occur, and the die strength of the chip can be improved. As a result, occurrence of defects such as cracks in the semiconductor chip in the pickup step, the resin sealing step, the reliability test, and the like can be suppressed. In addition, it is possible to suppress a decrease in bending strength of the chip due to dicing.

[Second embodiment]
In the first embodiment, the case where the semiconductor wafer 21 is fully cut at the time of dicing has been described as an example. However, the present invention can be similarly applied to a manufacturing process (first dicing method) in which a groove is formed by half-cutting the semiconductor wafer 21 and the back surface is ground and divided.

  That is, after various semiconductor elements are formed in a semiconductor wafer by a well-known manufacturing process, dicing is performed along a dicing line or a chip dividing line from the main surface side of the semiconductor wafer 21 to form a half-cut groove. For forming the half cut groove, for example, a diamond blade 23 as shown in FIG. 1 is used. The depth of the cut is approximately 10-30 μm (at least 5 μm) deeper than the final finished thickness of the chip. How much more depends on the accuracy of the dicer and grinder.

  Thereafter, as shown in FIG. 2, a laser beam 28 is irradiated from a laser irradiation device 27 to the dicing area 26 by the diamond blade 22 to perform a process of melting or vaporizing the surface of the chip side surface in the dicing area 26. The laser irradiation device 27 moves in the direction of the arrow shown in the figure, and irradiates a laser beam 28 along the dicing area 26.

  Subsequently, an adhesive sheet (surface protection tape) is attached to the element formation surface of the semiconductor wafer 21 that has been subjected to the half-cut dicing and the surface treatment by the laser beam, and is attached to a wafer ring. This surface protection tape is intended to prevent the device from being damaged in the process of shaving the back surface of the wafer to make it thinner.

  Next, the back surface of the wafer 21 is ground. In the back surface grinding step, the back surface of the wafer is ground to a predetermined thickness while rotating the wheel with the grindstone at a high speed of 4000 to 7000 rpm. The whetstone is formed by hardening artificial diamond with a phenol resin. This back grinding step is often performed on two axes. Further, there is a method of performing rough cutting with a grindstone of No. 320 to 600 in one axis in advance, and then finishing with a grindstone of No. 1500 to 2000 in two axes. Further, a method of grinding with three axes may be used. When the grinding reaches the groove, the semiconductor wafer 21 is separated into individual semiconductor chips 25-1, 25-2, 25-3,. Even after the semiconductor wafer 21 is singulated, the back surface is continuously ground to a predetermined thickness, whereby chipping formed at a position where the side surface and the back surface of the semiconductor chip 21 intersect can be removed.

  Subsequently, wet etching using a wet etching device, plasma etching using a plasma etching device, polishing using a polishing device, buff polishing using a buff polishing device, CMP using a CMP (Chemical Mechanical Polishing) device, or the like is performed. Then, the rear surface of the semiconductor chip is mirror-finished and flattened. This makes it possible to remove the grinding streak of the back surface grinding, so that the bending strength can be further increased.

  Subsequent steps are the same as those of the known method of manufacturing a semiconductor device, and the semiconductor device is completed through a mounting process such as a semiconductor chip pickup process, a mounting process to a lead frame or a TAB tape, and a sealing process to a package.

  According to such a manufacturing method, the dicing region 26 of the semiconductor chips 25-1, 25-2, 25-3,... Is irradiated with the laser beam 28 to perform a melting process or a vaporizing process. Distortion and chipping due to streaks during cutting can be removed, and the die strength of the chip can be improved. Therefore, it is possible to prevent a semiconductor chip from being broken and a defective product from being generated in an assembling process (pickup process or resin sealing process) until a semiconductor chip is packaged or in a reliability test. In addition, it is possible to suppress a decrease in bending strength of the chip due to dicing. Further, compared to dicing by laser beam irradiation, contamination of the chip surface due to adhesion of evaporants can be reduced.

  In the second embodiment, the dicing area is processed by irradiating a laser beam before the back surface grinding step. However, after the back surface grinding step, the side of the semiconductor chip formed by dividing the semiconductor wafer is formed. (Dicing area) may be irradiated with a laser beam.

  FIG. 4 shows a comparison between the conventional manufacturing method and manufacturing apparatus and the semiconductor device manufacturing methods according to the first and second embodiments of the present invention. The relationship with the rate [%] is shown. ○ indicates the conventional manufacturing method, □ indicates the manufacturing method according to the second embodiment of the present invention, and Δ indicates the bending strength [MPa] of the chip in the manufacturing method according to the first embodiment of the present invention. And the defect occurrence rate [%] are plotted.

  In the method of manufacturing the semiconductor device according to the first embodiment of the present invention, the transverse rupture strength is significantly increased, and the defect occurrence rate is accordingly reduced. Further, in the method of manufacturing a semiconductor device according to the second embodiment, the die strength can be increased as compared with the conventional manufacturing method, and the defect occurrence rate can be increased, although the die strength is reduced because the chip is thin. Lower. Therefore, it is possible to prevent the semiconductor chip from being broken and defective products from being generated in an assembly process (pickup process or resin sealing process) until a semiconductor chip is packaged or in a reliability test.

  The method for manufacturing a semiconductor device and the device for manufacturing a semiconductor device according to the first and second embodiments are also effective in preventing separation when a low dielectric constant film called a Low-K film is used as an interlayer insulating film. is there. That is, when a Low-K film is used as the interlayer insulating film, cracks occur during blade dicing irrespective of the full-cut method or the half-cut method, and peeling occurs during a temperature cycle test (TCT: Temperature Cycling Test). FIG. 5A is a photomicrograph of a side surface of a semiconductor chip subjected to blade dicing, and FIG. 5B is a photomicrograph of a side surface of the semiconductor chip when TCT is repeated 500 times. As shown in FIG. 5A, even when the cut surface is relatively good at the time of dicing, when a Low-K film is used, minute cracks are formed between the substrate and the Low-K film due to thermal stress. Understand. This crack causes the separation of the Low-K film.

  On the other hand, in laser dicing, the cut surface was good as shown in FIG. 6 (a), and no significant abnormality was seen as shown in FIG. 6 (b) even after the TCT was repeated 500 times. No abnormalities were detected in the measurement by SAT (Scanning Acoustic Topography). However, in the measurement using the focused ion beam (FIB) method, peeling due to the destruction of the Low-K film as shown in FIG. 7 was confirmed. In FIG. 7, peeling has occurred in the white portion from the lower left corner to the vicinity of the center.

  That is, when the Low-K film is used for the interlayer insulating film, the problem of peeling at the time of TCT cannot be avoided by either blade dicing or laser dicing, but cutting after blade dicing as in the first and second embodiments described above. By performing laser irradiation on the surface, the exposed surface of the Low-K film is melted or vaporized to be fixed, and peeling can be prevented as shown in FIG. FIG. 8 shows a measurement result by the FIB (Focused Ion Beam) method when the cut surface is irradiated with the laser after the blade dicing. As is clear from a comparison between FIG. 8 and FIG. 7, there is no white portion indicating peeling in FIG. 8, and the pattern on the chip surface is shown.

  The present invention is not limited to the first and second embodiments, and various modifications are possible.

[Modification 1]
By providing a treatment tank for storing semiconductor wafers in water and irradiating a laser beam in water, temperature control becomes easy, and a rise in chip temperature due to laser beam irradiation can be suppressed.

[Modification 2]
Further, by providing a vacuum chamber for accommodating a semiconductor wafer and irradiating a laser beam in a vacuum, it is possible to make it difficult to adhere a substance vaporized by the irradiation of the laser beam and to reduce contamination of the semiconductor chip.

[Modification 3]
In the first and second embodiments, the case where the dicing step and the laser beam irradiation step are performed in different steps has been described as an example. However, as shown in FIG. 9, if the dicing direction of the diamond blade 23 and the irradiation position of the laser beam 28 irradiated from the laser irradiation device 27 are previously centered and fixed to the jig 29, the dicing area 26 and the Subsequent to the dicing, the processing of the dicing area by the irradiation of the laser beam can be performed continuously without adjusting the alignment with the irradiation position of the laser beam 28.

  The modification shown in FIG. 9 can be applied to both the first embodiment in which the semiconductor wafer is fully cut and the second embodiment in which the semiconductor wafer is half-cut.

  Although the present invention has been described with reference to the first and second embodiments and Modifications 1 to 3, the present invention is not limited to each of the above-described embodiments and modifications thereof, and Various modifications can be made without departing from the spirit of the invention. Also, the above embodiments include inventions at various stages, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent features. For example, even if some components are deleted from all the components shown in each embodiment, at least one of the problems described in the column of the problem to be solved by the invention can be solved and the effects described in the column of the effect of the invention can be solved. In a case where at least one of the effects described above is obtained, a configuration in which this component is deleted can be extracted as an invention.

FIG. 2 is a perspective view showing a dicing step for explaining the method for manufacturing a semiconductor device and the apparatus for manufacturing a semiconductor device according to the first embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view for explaining a method for manufacturing a semiconductor device and a device for manufacturing a semiconductor device according to a first embodiment of the present invention, showing a process of processing a side surface of a chip by laser beam irradiation. 2 is a micrograph showing a comparison between a conventional method and a side surface of a semiconductor chip formed by a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus according to the first embodiment of the present invention. FIG. 6 shows a comparison between a conventional semiconductor chip and a semiconductor chip formed by a semiconductor device manufacturing method and a semiconductor device manufacturing apparatus according to the first and second embodiments of the present invention. FIG. 5 is a micrograph of a side surface of a semiconductor chip subjected to blade dicing and a side surface of the semiconductor chip when TCT is repeated 500 times. 7A and 7B are a micrograph of a side surface of a laser-diced semiconductor chip and a micrograph of a side surface of a semiconductor chip when TCT is repeated 500 times. 9 is a photograph showing a measurement result of a laser diced semiconductor chip by an FIB method. 4 is a photograph showing a measurement result by a FIB method of a semiconductor chip formed by a method of manufacturing a semiconductor device according to an embodiment of the present invention. FIG. 7 is a perspective view for explaining a modification of the semiconductor device manufacturing method and the semiconductor device manufacturing apparatus according to the first and second embodiments of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a dicing process and a dicing apparatus for forming a semiconductor chip by dividing a semiconductor wafer by explaining a conventional method for manufacturing a semiconductor device and a device for manufacturing a semiconductor device.

Explanation of reference numerals

  Reference Signs List 21: semiconductor wafer, 22: adhesive sheet, 23: diamond blade, 24: dicing line, 25-1, 25-2, 25-3: semiconductor chip, 26: dicing area, 27: laser irradiation device, 28: laser beam, 29 ... Jig.

Claims (5)

Forming a semiconductor element in a semiconductor wafer;
Forming a groove by half-cut dicing the semiconductor wafer along a dicing line,
Irradiating a laser beam to the dicing area of the semiconductor wafer, a step of melting or vaporizing the cutting streak formed by dicing,
A step of attaching an adhesive tape to the semiconductor element forming surface of the semiconductor wafer,
Grinding the back surface of the formation surface of the semiconductor element to at least a depth reaching the groove. Forming a semiconductor element in a semiconductor wafer;
Forming a groove by half-cut dicing the semiconductor wafer along a dicing line,
A step of attaching an adhesive tape to the semiconductor element forming surface of the semiconductor wafer,
Grinding the back surface of the formation surface of the semiconductor element to at least the depth reaching the groove,
Irradiating a laser beam to the dicing area of the semiconductor chip formed by dividing the semiconductor wafer in the grinding step, and melting or vaporizing a cutting streak formed by dicing. Device manufacturing method.   The wavelength of the laser beam is 266 nm to 1064 nm, the output is 0.8 W to 4.5 W, and the moving speed of the irradiation position is 1 mm / sec to 400 mm / sec. Manufacturing method of a semiconductor device.   4. The method according to claim 1, wherein the low-dielectric-constant film exposed in the dicing region is fixed by melting or vaporizing by the irradiation of the laser beam. 5. A dicer that forms a groove by half-cut dicing a semiconductor wafer along a dicing line,
A tape attaching device that attaches an adhesive tape to a surface of the semiconductor wafer on which the semiconductor elements are formed,
A grinding device that grinds the back surface of the semiconductor element formation surface in the semiconductor wafer to a depth that reaches at least the groove formed by the half cut,
A laser irradiation device that moves a laser beam irradiation position in accordance with the dicing position by the dicer, and that melts or vaporizes a cutting streak formed in a dicing region of the semiconductor wafer. manufacturing device.

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