JP2004277508A5 - - Google Patents

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Publication number
JP2004277508A5
JP2004277508A5 JP2003068760A JP2003068760A JP2004277508A5 JP 2004277508 A5 JP2004277508 A5 JP 2004277508A5 JP 2003068760 A JP2003068760 A JP 2003068760A JP 2003068760 A JP2003068760 A JP 2003068760A JP 2004277508 A5 JP2004277508 A5 JP 2004277508A5
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Japan
Prior art keywords
atom
silica
forming
film according
composition
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JP2003068760A
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Japanese (ja)
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JP2004277508A (en
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Priority to JP2003068760A priority Critical patent/JP2004277508A/en
Priority claimed from JP2003068760A external-priority patent/JP2004277508A/en
Publication of JP2004277508A publication Critical patent/JP2004277508A/en
Publication of JP2004277508A5 publication Critical patent/JP2004277508A5/ja
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Claims (9)

(a)成分:下記式(1);
SiX4−n …(1)
(式中、Rは、H原子若しくはF原子、又はB原子、N原子、Al原子、P原子、Si原子、Ge原子若しくはTi原子を含む基、又は炭素数1〜20の有機基を示し、Xは加水分解性基を示し、nは0〜2の整数を示す。但し、nが2のとき、各Rは同一でも異なっていてもよく、nが0〜2のとき、各Xは同一でも異なっていてもよい)、
で表される化合物を加水分解縮合して得られるシロキサン樹脂と、
(b)成分:計算溶解度パラメータの値が(a)成分のものより小さく、その差が10(MJ/m1/2以上である溶媒と、
を含有してなるシリカ系被膜形成用組成物。
(A) component: following formula (1);
R 1 n SiX 4-n (1)
(In the formula, R 1 represents an H atom or F atom, or a group containing B atom, N atom, Al atom, P atom, Si atom, Ge atom or Ti atom, or an organic group having 1 to 20 carbon atoms. , X represents a hydrolyzable group, and n represents an integer of 0 to 2. However, when n is 2, each R 1 may be the same or different, and when n is 0 to 2, May be the same or different)
A siloxane resin obtained by hydrolytic condensation of a compound represented by:
(B) component: a solvent having a calculated solubility parameter value smaller than that of component (a) and a difference of 10 (MJ / m 3 ) 1/2 or more;
A composition for forming a silica-based film comprising:
前記(a)成分は、Si原子1モルに対する、H原子、F原子、B原子、N原子、Al原子、P原子、Si原子、Ge原子、Ti原子及びC原子から成る群より選ばれる少なくとも一種の原子の総含有割合が0.65モル以下のものである、請求項1記載のシリカ系被膜形成用組成物。  The component (a) is at least one selected from the group consisting of H atom, F atom, B atom, N atom, Al atom, P atom, Si atom, Ge atom, Ti atom and C atom with respect to 1 mol of Si atom. The composition for forming a silica-based film according to claim 1, wherein the total content ratio of the atoms is 0.65 mol or less. 前記(b)成分がアルキレングリコールジアルキルエーテル又はジアルキレングリコールジアルキルエーテルである請求項1又は2に記載のシリカ系被膜形成用組成物。  The composition for forming a silica-based film according to claim 1 or 2, wherein the component (b) is alkylene glycol dialkyl ether or dialkylene glycol dialkyl ether. 250〜500℃の加熱温度で熱分解又は揮発する空隙形成用化合物を更に含有してなる請求項1〜3のいずれか一項に記載のシリカ系被膜形成用組成物。  The composition for forming a silica-based film according to any one of claims 1 to 3, further comprising a void-forming compound that is thermally decomposed or volatilized at a heating temperature of 250 to 500 ° C. 前記空隙形成用化合物が、オキシプロピレン単位を有する重合体である請求項1〜4のいずれか一項に記載のシリカ系被膜形成用組成物。  The composition for forming a silica-based film according to any one of claims 1 to 4, wherein the void-forming compound is a polymer having an oxypropylene unit. 基板上にシリカ系被膜を形成する方法であって、
請求項1〜のいずれか一項に記載のシリカ系被膜形成用組成物を基板上に塗布して塗布膜を形成し、該塗布膜に含まれる有機溶媒を除去した後、該塗布膜を250〜500℃の加熱温度で焼成することを特徴とするシリカ系被膜の形成方法。
A method of forming a silica-based film on a substrate,
The composition for forming a silica-based film according to any one of claims 1 to 5 is applied on a substrate to form a coating film, and after removing the organic solvent contained in the coating film, the coating film is A method for forming a silica-based coating, comprising firing at a heating temperature of 250 to 500 ° C.
基板上に設けられており、請求項記載のシリカ系被膜の形成方法により形成されてなることを特徴とするシリカ系被膜。A silica-based coating film provided on a substrate and formed by the method for forming a silica-based coating film according to claim 6 . 前記シリカ系被膜は、前記基板上に設けられた複数の導電性層のうち互いに隣接された導電性層の間に形成されたものであることを特徴とする請求項記載のシリカ系被膜。The silica-based coating film according to claim 7, wherein the silica-based film, characterized in that among the plurality of conductive layers provided on the substrate and is formed between adjacent electrically conductive layers to each other. 基板上に請求項又は記載のシリカ系被膜が形成されてなることを特徴とする電子部品。An electronic component comprising the silica-based film according to claim 7 or 8 formed on a substrate.
JP2003068760A 2003-03-13 2003-03-13 Silica film-forming composition, silica film, its forming method and electronic part having silica film Withdrawn JP2004277508A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2003068760A JP2004277508A (en) 2003-03-13 2003-03-13 Silica film-forming composition, silica film, its forming method and electronic part having silica film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003068760A JP2004277508A (en) 2003-03-13 2003-03-13 Silica film-forming composition, silica film, its forming method and electronic part having silica film

Publications (2)

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JP2004277508A JP2004277508A (en) 2004-10-07
JP2004277508A5 true JP2004277508A5 (en) 2005-09-08

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JP2003068760A Withdrawn JP2004277508A (en) 2003-03-13 2003-03-13 Silica film-forming composition, silica film, its forming method and electronic part having silica film

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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004277502A (en) * 2003-03-13 2004-10-07 Hitachi Chem Co Ltd Silica film-forming composition, silica film, its forming method and electronic part having silica film
US7345351B2 (en) 2003-04-09 2008-03-18 Lg Chem, Ltd. Coating composition for insulating film production, preparation method of insulation film by using the same, insulation film for semi-conductor device prepared therefrom, and semi-conductor device comprising the same
US20060047034A1 (en) 2004-09-02 2006-03-02 Haruaki Sakurai Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
JP2006117763A (en) * 2004-10-20 2006-05-11 Catalysts & Chem Ind Co Ltd Low dielectric constant amorphous silica film-forming coating liquid, its preparation method and low dielectric constant amorphous silica film obtained thereby
US20080260956A1 (en) * 2004-12-21 2008-10-23 Haruaki Sakurai Film, Silica Film and Method of Forming the Same, Composition for Forming Silica Film, and Electronic Part
JP2006213908A (en) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd Composition for forming silica-based film, method for forming silica-based film, silica-based film and electronic part

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