JP2003064307A5 - - Google Patents

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JP2003064307A5
JP2003064307A5 JP2001257113A JP2001257113A JP2003064307A5 JP 2003064307 A5 JP2003064307 A5 JP 2003064307A5 JP 2001257113 A JP2001257113 A JP 2001257113A JP 2001257113 A JP2001257113 A JP 2001257113A JP 2003064307 A5 JP2003064307 A5 JP 2003064307A5
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Japan
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group
silica
resin
less
based film
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JP2001257113A
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JP2003064307A (en
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Priority to JP2001257113A priority Critical patent/JP2003064307A/en
Priority claimed from JP2001257113A external-priority patent/JP2003064307A/en
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Publication of JP2003064307A5 publication Critical patent/JP2003064307A5/ja
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Claims (7)

(a)下記一般式(1)で表せられる化合物を加水分解縮合して得られるシロキサン樹脂、
Figure 2003064307
(式中、Rは、H若しくはF又はB、N、Al、P、Si、Ge若しくはTiを含む基又は炭素数1〜20の有機基を示し、同一でも異なっていてもよく、Xは、加水分解性基を示し、同一でも異なっていてもよく、nは0又は1の整数である)
(b)下記一般式(2)で表せられるイオン性化合物並びに
Figure 2003064307
(式中、Rは、水素原子又は炭素数1〜20の有機基を示し、Yは、陰イオンを示し、nは陰イオンの価数である)
(c)前記(a)成分及び(b)成分を溶解可能な溶媒を含むシリカ系被膜形成用組成物を基板上に塗布して、塗布した被膜に含有する溶媒を除去した後、250〜500℃の加熱温度で焼成して得られた樹脂。
(A) a siloxane resin obtained by hydrolytic condensation of a compound represented by the following general formula (1),
Figure 2003064307
(Wherein R 1 represents H or F or a group containing B, N, Al, P, Si, Ge or Ti, or an organic group having 1 to 20 carbon atoms, and may be the same or different, and X is , represents a hydrolyzable group, it may be the same or different, n represents an integer of 0 or 1)
(B) an ionic compound represented by the following general formula (2);
Figure 2003064307
(Wherein R 2 represents a hydrogen atom or an organic group having 1 to 20 carbon atoms, Y represents an anion, and n represents the valence of the anion)
(C) A silica-based film forming composition containing a solvent capable of dissolving the component (a) and the component (b) is applied on a substrate, and the solvent contained in the applied film is removed. Resin obtained by baking at a heating temperature of ℃.
(a)シロキサン樹脂のケイ素1原子あたりに結合しているH、F、B、N、Al、P、Si、Ge、Ti及びCからなる群より選ばれる少なくとも1種の原子の総数が0.65以下である請求項記載の樹脂(A) The total number of at least one atom selected from the group consisting of H, F, B, N, Al, P, Si, Ge, Ti, and C bonded per silicon atom of the siloxane resin is 0. 65 or less is claim 1, wherein the resin. 前記シリカ系被膜形成用組成物が、さらに、(d)250〜500℃の加熱温度で熱分解または揮発する熱分解揮発性化合物を含む請求項1又は2記載の樹脂The resin according to claim 1 or 2, wherein the composition for forming a silica-based film further comprises (d) a pyrolytic volatile compound that thermally decomposes or volatilizes at a heating temperature of 250 to 500 ° C. が50〜500℃以下の加熱温度で熱分解又は揮発する基である請求項1〜3のいずれか一項に記載の樹脂The resin according to any one of claims 1 to 3, wherein R 2 is a group that thermally decomposes or volatilizes at a heating temperature of 50 to 500 ° C or less. n−がCl、Br又はI以外の陰イオンである請求項1〜4のいずれか一項に記載の樹脂Y n-is Cl -, Br - or I - other resins according to any one of claims 1 to 4 is an anion. 前記シリカ系被膜形成用組成物のハロゲンイオン濃度が10ppm以下である請求項1〜5のいずれか一項に記載の樹脂The resin according to any one of claims 1 to 5, wherein a halogen ion concentration of the composition for forming a silica-based film is 10 ppm or less. 前記シリカ系被膜形成用組成物のアルカリ金属イオン及びアルカリ土類金属イオンが各々100ppb以下である請求項1〜6のいずれか一項に記載の樹脂The resin according to any one of claims 1 to 6, wherein each of the alkali metal ions and the alkaline earth metal ions of the composition for forming a silica-based film is 100 ppb or less.
JP2001257113A 2001-08-28 2001-08-28 Silica-based film, composition for forming silica-based film, method for producing silica-based film and electronic part Pending JP2003064307A (en)

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JP2012106042A Division JP2012188668A (en) 2012-05-07 2012-05-07 Silica-based film, composition for forming the silica-based film, method for producing the silica-based film, and electronic part

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JP2003064307A JP2003064307A (en) 2003-03-05
JP2003064307A5 true JP2003064307A5 (en) 2005-10-13

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Cited By (3)

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US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof

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US7682701B2 (en) 2002-02-27 2010-03-23 Hitachi Chemical Co., Ltd. Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
AU2003211343A1 (en) 2002-02-27 2003-09-09 Hitachi Chemical Co., Ltd. Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
US7687590B2 (en) 2002-02-27 2010-03-30 Hitachi Chemical Company, Ltd. Composition for forming silica based coating film, silica based coating film and method for preparation thereof, and electronic parts
JP2004277502A (en) * 2003-03-13 2004-10-07 Hitachi Chem Co Ltd Silica film-forming composition, silica film, its forming method and electronic part having silica film
TW200605220A (en) * 2004-06-21 2006-02-01 Hitachi Chemical Co Ltd Organic siloxane film, semiconductor device using same, flat panel display and raw material liquid
US20060047034A1 (en) 2004-09-02 2006-03-02 Haruaki Sakurai Composition for forming silica-based film, method of forming silica-based film, and electronic component provided with silica-based film
WO2006068181A1 (en) * 2004-12-21 2006-06-29 Hitachi Chemical Company, Ltd. Film, silica film and method of forming the same, composition for forming silica film, and electronic part
JP2006213908A (en) * 2004-12-21 2006-08-17 Hitachi Chem Co Ltd Composition for forming silica-based film, method for forming silica-based film, silica-based film and electronic part
JP4757524B2 (en) * 2005-04-13 2011-08-24 東京応化工業株式会社 Silica-based film forming composition
JP4757525B2 (en) * 2005-04-13 2011-08-24 東京応化工業株式会社 Silica-based film forming composition
CN101155887B (en) * 2005-04-13 2012-06-27 东京应化工业株式会社 Silica-based film-forming composition
CN101631745B (en) 2007-03-13 2012-10-17 三菱化学株式会社 Silica porous body, laminate and composition for optical use, and method for producing silica porous body
JP6803842B2 (en) 2015-04-13 2020-12-23 ハネウェル・インターナショナル・インコーポレーテッドHoneywell International Inc. Polysiloxane formulations and coatings for optoelectronic applications

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JP3287119B2 (en) * 1994-07-13 2002-05-27 住友化学工業株式会社 Coating solution for forming silica-based insulating film
JP3328545B2 (en) * 1997-05-28 2002-09-24 東レ・ダウコーニング・シリコーン株式会社 Method for manufacturing semiconductor device
US6592980B1 (en) * 1999-12-07 2003-07-15 Air Products And Chemicals, Inc. Mesoporous films having reduced dielectric constants
JP4195773B2 (en) * 2000-04-10 2008-12-10 Jsr株式会社 Composition for forming interlayer insulating film, method for forming interlayer insulating film, and silica-based interlayer insulating film
US6576568B2 (en) * 2000-04-04 2003-06-10 Applied Materials, Inc. Ionic additives for extreme low dielectric constant chemical formulations

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8901268B2 (en) 2004-08-03 2014-12-02 Ahila Krishnamoorthy Compositions, layers and films for optoelectronic devices, methods of production and uses thereof
US8557877B2 (en) 2009-06-10 2013-10-15 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8784985B2 (en) 2009-06-10 2014-07-22 Honeywell International Inc. Anti-reflective coatings for optically transparent substrates
US8864898B2 (en) 2011-05-31 2014-10-21 Honeywell International Inc. Coating formulations for optical elements

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