JP2004259840A - Cutting-off method and cutting-off equipment of semiconductor wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a cutting-off method and cutting-off equipment which can carve efficiently semiconductor elements formed on a semiconductor wafer. <P>SOLUTION: The cutting-off method cuts and disrupts a semiconductor wafer 16 in which a plurality of semiconductor elements 161 are formed along a scribe line 162 of the wafer 16 by using a blade 12. While engrossing the wafer 16 into entrapment liquid W1, cooling liquid W2 is supplied to the surface of the blade 12. While cooling the blade 12, cleaning liquid W3 is supplied to a part which is cut by the blade 12 among the scribe lines 162 of the wafer 16 in a travel direction D of cutting by the blade 12 or its opposite direction, thereby performing cutting and truncation. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method and an apparatus for cutting a semiconductor wafer used when cutting a semiconductor element formed on a semiconductor wafer.
[0002]
[Prior art]
2. Description of the Related Art Conventionally, semiconductor devices are mounted on electronic devices in various fields such as consumer devices such as home appliances and entertainment products to control the operation. The semiconductor device includes, for example, a solid-state imaging device such as a CCD (Charge Coupled Device). Usually, a plurality of such semiconductor elements are formed in a lattice pattern on a semiconductor wafer made of silicon in order to enhance productivity. Therefore, when mounting individual semiconductor elements on a device, it is necessary to cut out the semiconductor wafer. When cutting a semiconductor element from such a semiconductor wafer, for example, a cutting device as shown in FIG. 5 is used (for example, see Patent Document 1).
[0003]
This cutting device includes a recess 91 for setting the semiconductor wafer 16, a blade 12 for cutting and cutting the semiconductor wafer 16, and a cooling device for spraying a coolant W 2 toward the edge of the blade 12 to cool the blade 12. After the semiconductor wafer 16 is submerged in the liquid stored in the recess 91, the blade 12 is cooled by the cooling liquid W2 from the cooling liquid nozzle 17 and the semiconductor wafer 16 is cooled by the blade 12. Cut and cut. In addition, the cutting chips such as silicon generated by the cutting float in the liquid stored in the recess 91 so as not to adhere to the surface of the semiconductor wafer, and the liquid that overflows from the recess 91 as overflow. They were discharged from the recess 91 together.
[0004]
[Patent Document 1]
JP-A-11-11647 [0005]
[Problems to be solved by the invention]
However, in the above-described cutting device, the coolant W2 sprayed from the coolant nozzle 17 can contact the blade 12 to cool the blade 12, but loses the momentum of the spray due to the contact with the blade 12. When it is stored in the recess 91 after the contact, it becomes substantially stationary, so even if the cutting chips generated by cutting the blade 12 can be floated, the cutting chips are removed from the semiconductor wafer. It was difficult to wash and remove from above. For this reason, cutting chips generated by cutting may float on the semiconductor wafer 16 during cutting. As described above, when the cutting chips are floating on the portion of the blade 12 to be cut, the cutting is performed while the cutting chips are involved in the cutting of the blade 12, and when cutting is performed with high accuracy. In some cases, the semiconductor device cannot be cut out efficiently, for example, as an obstacle.
[0006]
The present invention has been made in view of the above problems, and an object of the present invention is to provide a cutting method and a cutting device capable of efficiently cutting a semiconductor element formed on a semiconductor wafer.
[0007]
[Means for Solving the Problems]
A method for cutting a semiconductor wafer according to claim 1 of the present invention is a cutting method for cutting a semiconductor wafer on which a plurality of semiconductor elements are formed by cutting the semiconductor wafer along a scribe line of the semiconductor wafer with a blade. While the semiconductor wafer to be immersed in the liquid, while supplying a cooling liquid to the surface of the blade to cool the blade, the cutting of the blade is performed in a portion of the scribe line of the semiconductor wafer where the blade is cutting. It is characterized in that cutting is performed while supplying the cleaning liquid along the traveling direction or the opposite direction.
[0008]
A semiconductor wafer cutting device according to claim 2 of the present invention is a semiconductor wafer cutting device that cuts a semiconductor wafer on which a plurality of semiconductor elements are formed along a scribe line of the semiconductor wafer. A liquid tank containing a liquid to be immersed; holding means for holding the semiconductor wafer so that the entire semiconductor wafer is immersed in the liquid contained in the liquid tank; and cutting the semiconductor wafer along its scribe line. A blade that cuts the blade, a cooling liquid supply unit that supplies a cooling liquid to the surface of the blade and cools the blade, and a portion of the scribe line of the semiconductor wafer where the blade is cut, Cleaning liquid supply means for supplying a cleaning liquid along the direction in which the cutting proceeds or in the opposite direction.
[0009]
According to a third aspect of the present invention, in the second aspect of the present invention, a liquid for immersing the semiconductor wafer into the liquid tank is supplied from an end of the liquid tank in a direction along a supply direction of the cleaning liquid by the cleaning liquid supply means. And an immersion liquid supply unit.
[0010]
According to a fourth aspect of the present invention, in the second or third aspect of the present invention, the liquid tank has a bottom portion and a peripheral wall provided upright on the bottom portion, and has a substantially concave longitudinal cross section. At least a part of the upper part is formed in an inclined shape, and the opening width thereof gradually increases from the inside to the outside of the liquid tank.
[0011]
According to a fifth aspect of the present invention, in any one of the second to fourth aspects of the present invention, the liquid tank has a bottom portion and a peripheral wall erected on the bottom portion, and a part of the peripheral wall has the peripheral wall. It is characterized by having a discharge flow path penetrating the entire length in the thickness direction.
[0012]
According to a sixth aspect of the present invention, in the fifth aspect of the invention, the holding means holds the semiconductor wafer at a position higher than the discharge channel.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
FIG. 1 is a schematic view of a semiconductor wafer cutting method and a cutting apparatus according to an embodiment of the present invention, wherein 16 is a semiconductor wafer, 11 is a table on which the semiconductor wafer 16 is mounted, and 12 is a semiconductor wafer. Blade, 13 a donut-shaped frame, 14 a cylindrical body, 15 a dicing tape, 17 a cooling liquid nozzle, W2 a cooling liquid supplied by a cooling liquid nozzle, 18 a cleaning liquid nozzle, W3 a cleaning liquid supplied by a cleaning liquid nozzle, 19 is an immersion liquid nozzle, W1 is an immersion liquid supplied by the immersion liquid nozzle, 161 is a semiconductor element, 162 is a scribe line, D is a cutting direction of the blade 12, and R is a rotation direction of the blade 12. . 1A is a schematic top view showing the upper surface of the cutting device, FIG. 1B is a schematic front sectional view showing a front cross section of the cutting device, and FIG. FIG.
[0014]
The cooling liquid nozzle 17 serving as a cooling liquid supply unit jets and supplies a cooling liquid W <b> 2 having a temperature lower than the temperature of the blade 12 to the surface of the blade 12 from the thickness direction of the blade 12. The coolant W2 comes into contact with the surface of the blade 12 and exchanges heat with the blade 12, thereby removing heat from the blade 12 and cooling the blade. After cooling, it mixes with the immersion liquid W1 in the liquid tank and becomes a liquid that immerses the semiconductor wafer 16. The blade 12 is provided integrally with a support (not shown) of the blade 12. By doing so, when the blade 12 performs cutting along the scribe line 162, the coolant nozzle 17 can move integrally with the blade 12, so that the coolant W2 can be stably supplied to the blade 12. , Can be cooled. When the blade 12 cuts the semiconductor wafer 16, at least a part of the blade 12 is immersed in the immersion liquid W1. At this time, if the cooling liquid nozzle 17 is also immersed in the immersion liquid W1, the supply is performed. The cooling liquid W2 is diffused in the immersion liquid W1, and the cooling efficiency of the blade 12 may decrease. Therefore, in order to further improve the cooling efficiency, it is more preferable to supply the coolant W2 from the coolant nozzle 17 to a portion of the surface of the blade 12 that is not immersed in the immersion liquid W1. In addition, it is preferable that the cooling liquid W2 be supplied at a temperature sufficiently lower than the temperature of the blade 12 because the larger the temperature difference with respect to the blade 12, the more efficiently the blade 12 can be cooled.
[0015]
The cleaning liquid nozzle 18 serving as a cleaning liquid supply unit is provided so as to supply the cleaning liquid W3 to the portion where the blade 12 is cutting in the direction along the cutting direction D of the blade 12. The cleaning liquid nozzle 18 is also provided integrally with a support (not shown) of the blade 12 similarly to the cooling liquid nozzle 17. By doing so, the cleaning liquid W3 from the cleaning liquid nozzle 18 can be stably supplied to the cut portion of the blade 12, and the cutting chips generated by the cutting can be quickly removed from the cut portion. In addition, it is possible to keep the cut portion clean at all times. Further, since the cleaning liquid W3 is supplied to the cutting portion of the blade 12, the cleaning liquid W3 also has an effect of cooling the blade 12 together with the cooling liquid W2. The supply direction of the cleaning liquid W3 may be opposite to the direction D in which the blade 12 is cut. After the cleaning liquid W3 is sprayed on the cutting portion, the cleaning liquid W3 is stored in the liquid tank, becomes a liquid for immersing the semiconductor wafer 16, and cools the semiconductor wafer 16 and the blade 12, so that the temperature of the cleaning liquid W3 also decreases. As with the cooling liquid W2, it is preferable to supply a material having a temperature sufficiently lower than the temperature of the blade 12.
[0016]
A plurality of immersion liquid nozzles 19, 19 # as immersion liquid supply means are arranged side by side at the end of the liquid tank, and the supply direction of the cleaning liquid W3 from the plurality of immersion liquid nozzles 19, 19 #, that is, the blade 12 Is provided so as to supply the immersion liquid W1 in a direction along the traveling direction D of the cutting. Due to the immersion liquid W1 supplied by the immersion liquid nozzle 19, a liquid flows in the liquid tank along the traveling direction D of the blade 12, and cutting chips generated by cutting the blade 12 are moved to one end side of the liquid tank. It becomes possible to collect the chips, the cutting chips can be more efficiently removed from the semiconductor wafer 16 in accordance with the supply of the cleaning liquid W3 from the cleaning liquid nozzle 18, and the removed cutting chips are returned to the semiconductor wafer 16 again. It becomes possible to make it difficult. Further, since the entirety of the semiconductor wafer 16 is immersed in the immersion liquid W1, even when the cooling liquid W2 from the cooling liquid nozzle 17 or the cleaning liquid W3 from the cleaning liquid nozzle 18 collides with the semiconductor wafer 16, the same is applied. Since the cooling liquid W2 and the cleaning liquid W3 are diffused by the immersion liquid W1 and their momentum is reduced, it is difficult for the semiconductor element 161 to be overloaded. Furthermore, since the immersion liquid W1 that cannot be accommodated in the liquid tank overflows from the liquid tank as overflow, cutting chips can be discharged from the liquid tank together with the overflowing immersion liquid W1. The temperature of the immersion liquid W1, like the cooling liquid W2 and the cleaning liquid W3, is set to a temperature sufficiently lower than the temperature of the blade 12 so that the blade 12 and the semiconductor wafer 16 are cooled more efficiently. Is preferable. If the immersion liquid W1 is continuously supplied from the immersion liquid nozzle 19 during cutting by the blade 12, the immersion liquid W1 can be stably stored in the liquid tank. 16 can be prevented from being exposed from the immersion liquid W1.
[0017]
The liquid tank includes a cylindrical body 14, a ring frame 13, and a dicing tape 15, and contains an immersion liquid W1 for immersing the semiconductor wafer 16 in a region surrounded by the cylindrical body 14, the ring frame 13, and the dicing tape 15. The cylindrical body 14 has a substantially cylindrical shape made of a metal material having both ends opened in the axial direction, and is used as a peripheral wall of the liquid tank. Further, the semiconductor wafer 16 having a sufficiently large axial length with respect to the thickness of the semiconductor wafer 16 is used so that the entire semiconductor wafer 16 is immersed when the semiconductor wafer 16 is bonded to the dicing tape 15. The dicing tape 15 is a tape having an adhesive property on its surface. The dicing tape 15 is bonded not only as a component of the liquid tank but also to the semiconductor wafer 16 and holds the bonded semiconductor wafer 16 in the immersion liquid W1. It also functions as holding means. The ring frame 13 has a substantially cylindrical shape made of a metal material having both ends opened in the axial direction, and is used together with the dicing tape 15 as a bottom of a liquid tank. When forming a liquid tank with these components, the ring frame 13 and the cylindrical body 14 are joined together, and the ring frame 13 and the dicing tape 15 are bonded. The ring frame 13 is also fixed to the table 11, and the liquid tank and the semiconductor wafer 16 are fixed to the table 11.
[0018]
The blade 12 has a substantially disc shape, and a portion of a cutting edge for cutting the semiconductor wafer 16 is coated with diamond. The blade 12 is rotated about a rotation axis (not shown) in the direction of the rotation direction R as shown in FIG. 1C to cut the scribe line 162 of the semiconductor wafer 16.
[0019]
The semiconductor wafer 16 has a plurality of semiconductor elements 161 such as sensors and actuators in a matrix, and has a scribe line 162 between the plurality of semiconductor elements 161 and 161 #. At the time of cutting, the scribe line 162 is cut by the blade 12 so as to be cut into individual semiconductor elements 161. Although the semiconductor wafer 16 shown in FIG. 1A has a substantially disk shape, the shape is not limited to this, and the semiconductor wafer 16 may have any shape such as a polygonal shape. It may be. Although the thickness is not particularly limited, for example, the semiconductor wafer 16 having a thickness of about 400 μm can be cut well.
[0020]
Next, a process of cutting the semiconductor wafer in the present embodiment will be described below.
[0021]
First, the semiconductor wafer 16 is arranged on the dicing tape 15 and adhered and held. Next, while the semiconductor wafer 16 is held on the dicing tape 15, the immersion liquid W1 is supplied from the immersion liquid nozzle 19 into the liquid tank. When the whole of the semiconductor wafer 16 can be immersed in the supplied immersion liquid W1, cutting by the blade 12 is started. At this time, the cutting may be started after waiting until the immersion liquid W1 overflows from the liquid tank.
[0022]
Next, the blade 12 is adjusted so that the lower end thereof is slightly lower than the dicing tape 15, for example, about 10 to 30 μm, and is positioned at the end of the semiconductor wafer 16. Next, the blade 12 is cooled, and the blade 12 is cooled by injecting the cooling liquid W2 from the cooling liquid nozzle 17 toward the surface of the blade 12. Further, the cleaning liquid W3 is sprayed from the cleaning liquid nozzle 18 toward a portion where the blade 12 is to cut. The immersion liquid nozzle 19 supplies the immersion liquid W1 from the end of the liquid tank into the liquid tank. At this time, the cooling liquid W2 from the cooling liquid nozzle 17 and the cleaning liquid W3 from the cleaning liquid nozzle 18 are diffused by the immersion liquid W1 in the liquid tank, so that the cooling liquid W2 and the cleaning liquid W3 The impact upon hitting 161 is reduced.
[0023]
Next, the table 11 is moved vertically and horizontally with respect to the rotated blade 12 in a direction along the scribe line 162, and the scribe line 162 is cut by the blade 12. Chips such as silicon generated by the cutting flow out of the cut portion by the cleaning liquid W3 and the immersion liquid W1 from the cleaning liquid nozzle 18. In addition, debris having a lower specific gravity than the immersion liquid W1 flows out of the liquid tank together with the immersion liquid W1 that overflows from the liquid tank as overflow. By cutting the semiconductor wafer 16 by such a process, cutting chips generated by the cutting can be efficiently removed, and the semiconductor element 161 can be stably cut without being damaged.
[0024]
As described above, the cooling liquid nozzle 17 for jetting the cooling liquid W2 for cooling the blade 12, the cleaning liquid nozzle 18 for jetting the cleaning liquid W3 for removing cutting chips, and the immersion liquid nozzle 19 for supplying the immersion liquid W1 in the liquid tank. The cutting is performed in a state where the semiconductor wafer 16 is immersed in the immersion liquid W1 while the liquid is jetted from each nozzle, so that when the semiconductor elements 161 are cut out from the semiconductor wafer 16, cutting chips are efficiently removed. Therefore, the semiconductor element 161 can be stably cut out without being damaged.
[0025]
In the above description, of the liquid stored in the liquid tank, the liquid discharged from the liquid tank is limited to the amount exceeding the cylinder 14. However, the discharge of the liquid from the liquid tank is more efficient. It is also preferable that the waste is efficiently discharged from the liquid tank. For example, as shown in FIG. 2, if an inclined wall 143 is formed on the upper wall of the cylindrical body 14 so that the opening width gradually increases from the bottom of the liquid tank toward the upper end of the peripheral wall. Good. This makes it easy to move the debris floating in the liquid tank along the inclined wall surface 143 and discharge it to the outside of the liquid tank. It is to be noted that the present invention is not limited to the formation of the inclined wall surface 143, and any shape may be used as long as the opening width is gradually increased from the bottom direction of the liquid tank toward the upper end direction of the peripheral wall. May be.
[0026]
Also, as shown in FIG. 3, the debris which has a higher specific gravity than the immersion liquid W1 and sinks in the immersion liquid W1 and stays at the bottom of the liquid tank can be efficiently discharged from the liquid tank as shown in FIG. It is also preferable to form a discharge flow path 141 that penetrates the entire length in the thickness direction of part 14. By forming such a discharge channel 141, it is possible to efficiently discharge debris in the liquid tank from the liquid tank through the discharge channel 141. In addition, it is preferable that the discharge channel 141 is formed in the lower part of the cylindrical body 14, particularly in the vicinity of the dicing tape 15, because the waste can be discharged more efficiently.
[0027]
Further, as shown in FIG. 4, dicing is performed so as to wash away from the surface of the semiconductor wafer 16 and debris having a large specific gravity which sinks to the bottom in the liquid tank so as not to adhere to the surface of the semiconductor wafer 16 again. It is also preferable that the tape 15 has a convex cross section and the semiconductor wafer 16 is held on the top of the dicing tape 15. For example, a liquid tank may be formed with the plate 22 interposed between the table 11 and the dicing tape 15 so that the dicing tape 15 has a convex cross section. The portion may be formed thicker than its peripheral portion so as to have a convex cross section, or may be formed by any other method. In this way, by positioning the semiconductor wafer 16 at a position one step higher than the bottom of the liquid tank, it is possible to prevent the debris settling on the bottom of the liquid tank from adhering to the semiconductor wafer 16.
[0028]
In addition, a flow path for circulating the immersion liquid W1 is provided separately from the liquid tank, and the immersion liquid W1 is circularly circulated between the flow path and the liquid tank, that is, a flow path for connecting one end and the other end of the liquid tank. A separate path is provided to allow the immersion liquid W1 flowing out from one end to flow into the flow path and to supply the immersion liquid W1 in the flow path again into the liquid tank from the other end of the liquid tank. Is also preferred. Further, in the middle of this flow path, means for increasing the flow of liquid such as a water flow pump, a filter for collecting debris, and the like are provided, and the immersion liquid W1 flowing in the flow path is more efficiently returned to the liquid tank. Alternatively, it is also preferable to collect debris contained in the immersion liquid W1 and to recirculate the clean immersion liquid W1 containing no debris.
[0029]
Further, the liquid types of the immersion liquid W1, the cooling liquid W2, and the cleaning liquid W3 are not particularly limited, but, for example, pure water containing no impurities or dissolving carbon dioxide gas in the pure water to make it difficult to generate static electricity. It is preferable to use a liquid or the like. Further, the temperature of each liquid may be the same or different, but it is essential that the temperature be such that the blade 12 can be cooled.
[0030]
The preferred embodiment of the present invention has been described above, but the present invention is not limited to this embodiment and can be implemented in various forms.
[0031]
【The invention's effect】
As described above, the method for cutting a semiconductor wafer according to claim 1 of the present invention is a cutting method for cutting a semiconductor wafer on which a plurality of semiconductor elements are formed by cutting the semiconductor wafer along a scribe line of the semiconductor wafer with a blade. And, while immersing the semiconductor wafer to be cut into the liquid, while cooling the blade by supplying a cooling liquid to the surface of the blade, the portion of the scribe line of the semiconductor wafer where the blade is cutting, Since the cutting is performed while supplying the cleaning liquid along the direction in which the blade is cut or in the opposite direction, the semiconductor element can be cut out efficiently.
[0032]
An apparatus for cutting a semiconductor wafer according to claim 2 of the present invention is a semiconductor wafer cutting apparatus for cutting a semiconductor wafer on which a plurality of semiconductor elements are formed along a scribe line of the semiconductor wafer. A liquid tank containing a liquid for immersing the semiconductor wafer, holding means for holding the semiconductor wafer so that the entire semiconductor wafer is immersed in the liquid stored in the liquid tank, and cutting the semiconductor wafer along the scribe line thereof. A blade for cutting and supplying a cooling liquid to the surface of the blade to cool the blade; and a blade for cutting the blade of the semiconductor wafer scribe line, Cleaning liquid supply means for supplying a cleaning liquid along the direction of the cutting or the direction opposite to the cutting direction. It becomes possible to cut out an effect that.
[0033]
The semiconductor wafer cutting device according to claim 3 of the present invention is a liquid for immersing the semiconductor wafer into the liquid tank from an end of the liquid tank in a direction along a supply direction of the cleaning liquid by the cleaning liquid supply means. Is provided, so that it is possible to efficiently remove cutting chips generated by cutting, and it is possible to cut out semiconductor elements more efficiently.
[0034]
In a semiconductor wafer cutting apparatus according to a fourth aspect of the present invention, the liquid tank has a bottom portion and a peripheral wall erected on the bottom, has a substantially concave longitudinal cross section, and has an upper portion of the peripheral wall. At least a part is formed in an inclined shape, and since the opening width gradually increases from the inside to the outside of the liquid tank, it is possible to efficiently discharge the debris in the liquid tank from the inside of the liquid tank. This has the effect.
[0035]
In a semiconductor wafer cutting device according to a fifth aspect of the present invention, the liquid tank has a bottom portion and a peripheral wall erected on the bottom portion, and a part of the peripheral wall has a total length in the thickness direction of the peripheral wall. Since the discharge channel has a penetrating discharge channel, there is an effect that it is possible to efficiently discharge debris in the bathtub from the bathtub through the discharge channel.
[0036]
In the semiconductor wafer cutting apparatus according to a sixth aspect of the present invention, since the holding means holds the semiconductor wafer at a position higher than the discharge flow path, cutting chips generated by cutting can be efficiently removed from the semiconductor wafer. This has the effect of being able to be removed.
[Brief description of the drawings]
FIG. 1 is a view schematically showing a cutting apparatus according to an embodiment of a method and apparatus for cutting a semiconductor wafer of the present invention.
FIG. 2 is a schematic front sectional view of a cutting device in which the shape of a peripheral wall is changed in the method and the device for cutting a semiconductor wafer.
FIG. 3 is a front cross-sectional schematic view of a cutting device in which the shape of a peripheral wall is further changed in the method and the device for cutting a semiconductor wafer.
FIG. 4 is a schematic front sectional view of a cutting apparatus in which the semiconductor wafer is held one step higher than its periphery in the method and apparatus for cutting a semiconductor wafer.
FIG. 5 is a view schematically showing a conventional semiconductor wafer cutting apparatus.
[Explanation of symbols]
12 blade 13 ring frame 14 cylinder 15 dicing tape 16 semiconductor wafer 17 cooling liquid nozzle 18 cleaning liquid nozzle 19 immersion liquid nozzle 22 plate 141 discharge channel 161 semiconductor element 162 scribe line W1 immersion liquid W2 cooling liquid W3 cleaning liquid

Claims (6)

A cutting method for cutting a semiconductor wafer on which a plurality of semiconductor elements are formed by cutting the semiconductor wafer with a blade along a scribe line of the semiconductor wafer,
While the semiconductor wafer to be cut is immersed in the liquid, and a cooling liquid is supplied to the surface of the blade to cool the blade, the cutting of the blade is performed in a portion of the scribe line of the semiconductor wafer where the blade is cutting. Cutting the semiconductor wafer while supplying the cleaning liquid along the traveling direction of the semiconductor wafer or the opposite direction. A semiconductor wafer cutting device for cutting a semiconductor wafer on which a plurality of semiconductor elements are formed, along a scribe line of the semiconductor wafer,
A liquid tank containing a liquid for immersing the semiconductor wafer,
Holding means for holding the semiconductor wafer so that the entire semiconductor wafer is immersed in the liquid contained in the liquid tank;
A blade that cuts and cuts a semiconductor wafer along its scribe line,
Supplying a coolant to the surface of the blade, a coolant supply means for cooling the blade,
A portion of the scribe line of the semiconductor wafer, which is cut by the blade, is provided with cleaning liquid supply means for supplying a cleaning liquid along a direction in which the blade is cut or a direction opposite thereto. Semiconductor wafer cutting device. An immersion liquid supply means for supplying a liquid for immersing the semiconductor wafer from the end of the liquid tank into the liquid tank in a direction along a supply direction of the cleaning liquid by the cleaning liquid supply means. Item 3. A device for cutting a semiconductor wafer according to item 2. The liquid tank has a bottom and a peripheral wall erected on the bottom and has a substantially concave longitudinal cross section, and at least a part of an upper part of the peripheral wall is formed in an inclined shape, and from the inside to the outside of the liquid tank. 4. The apparatus for cutting a semiconductor wafer according to claim 2, wherein the width of the opening gradually increases toward. The liquid tank has a bottom and a peripheral wall erected on the bottom, and a part of the peripheral wall has a discharge flow path penetrating the entire length of the peripheral wall in the thickness direction. An apparatus for cutting a semiconductor wafer according to any one of claims 2 to 4. 6. The semiconductor wafer cutting apparatus according to claim 5, wherein said holding means holds said semiconductor wafer at a position higher than said discharge channel.

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