JP2004259353A5 - - Google Patents
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- Publication number
- JP2004259353A5 JP2004259353A5 JP2003047845A JP2003047845A JP2004259353A5 JP 2004259353 A5 JP2004259353 A5 JP 2004259353A5 JP 2003047845 A JP2003047845 A JP 2003047845A JP 2003047845 A JP2003047845 A JP 2003047845A JP 2004259353 A5 JP2004259353 A5 JP 2004259353A5
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003047845A JP2004259353A (ja) | 2003-02-25 | 2003-02-25 | 不揮発性磁気メモリ装置、及び、不揮発性磁気メモリ装置におけるトンネル磁気抵抗素子へのデータ書込方法 |
| US10/767,423 US7035136B2 (en) | 2003-02-25 | 2004-01-30 | Nonvolatile magnetic memory device and method of writing data into tunnel magnetoresistance device in nonvolatile magnetic memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003047845A JP2004259353A (ja) | 2003-02-25 | 2003-02-25 | 不揮発性磁気メモリ装置、及び、不揮発性磁気メモリ装置におけるトンネル磁気抵抗素子へのデータ書込方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2004259353A JP2004259353A (ja) | 2004-09-16 |
| JP2004259353A5 true JP2004259353A5 (ja) | 2005-08-25 |
Family
ID=32984350
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003047845A Abandoned JP2004259353A (ja) | 2003-02-25 | 2003-02-25 | 不揮発性磁気メモリ装置、及び、不揮発性磁気メモリ装置におけるトンネル磁気抵抗素子へのデータ書込方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7035136B2 (ja) |
| JP (1) | JP2004259353A (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7339818B2 (en) * | 2004-06-04 | 2008-03-04 | Micron Technology, Inc. | Spintronic devices with integrated transistors |
| US20070279967A1 (en) * | 2006-05-18 | 2007-12-06 | Xiao Luo | High density magnetic memory cell layout for spin transfer torque magnetic memories utilizing donut shaped transistors |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02257474A (ja) * | 1988-12-21 | 1990-10-18 | Matsushita Electric Ind Co Ltd | 円盤状記録媒体記録／再生装置 |
| JP3321836B2 (ja) * | 1991-10-24 | 2002-09-09 | ソニー株式会社 | 波形等化装置 |
| JP3184352B2 (ja) * | 1993-02-18 | 2001-07-09 | 松下電器産業株式会社 | メモリー素子 |
| US5940319A (en) * | 1998-08-31 | 1999-08-17 | Motorola, Inc. | Magnetic random access memory and fabricating method thereof |
| JP2000261291A (ja) * | 1999-03-11 | 2000-09-22 | Mitsubishi Electric Corp | リサンプラ方法およびリサンプラ回路 |
| JP2002100181A (ja) * | 2000-09-27 | 2002-04-05 | Nec Corp | 磁気ランダムアクセスメモリ |
| DE10053965A1 (de) * | 2000-10-31 | 2002-06-20 | Infineon Technologies Ag | Verfahren zur Verhinderung unerwünschter Programmierungen in einer MRAM-Anordnung |
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2003
- 2003-02-25 JP JP2003047845A patent/JP2004259353A/ja not_active Abandoned
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2004
- 2004-01-30 US US10/767,423 patent/US7035136B2/en not_active Expired - Fee Related