JP2004253236A - Manufacturing method of cold cathode display device, and cold cathode display device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a cold cathode display device and the cold cathode display device wherein short circuit occurring in a cathode electrode and a draw-out electrode can be prevented. <P>SOLUTION: A cathode electrode 2 is formed on a substrate 2 and a transparent insulating layer 3 which has a hole 5 at the bottom of which the cathode electrode 2 is exposed, and a draw-out electrode 4 are laminated so that the substrate 1 is covered. Next, the hole 5 is filled up, and after a sacrifice layer 14 is formed so as to cover the draw-out electrode 4, a micropore 16 is formed in the sacrifice layer 14 filled up in the hole 5. Furthermore, after an electron emitting material is filled up for the micropore, the electron emitting material formed on the sacrifice layer 14 is removed by the lift-off treatment of the sacrifice layer 14. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a cold cathode display and a cold cathode display.
[0002]
[Prior art]
Conventionally, the following method has been disclosed as a method for manufacturing a cold cathode display device (for example, see Patent Document 1).
[0003]
In the related art, a cathode electrode having a predetermined shape is provided on a substrate, and an insulating layer, a lead electrode, and a sacrificial layer are stacked in this order so as to cover the substrate and the cathode electrode. Here, alumina or the like is employed as the sacrificial layer.
[0004]
Next, an opening is formed at a predetermined position of the insulating layer, the extraction electrode, and the sacrificial layer, and the cathode electrode is exposed from the opening.
[0005]
Next, a diamond film is formed on the cathode electrode and the sacrificial layer under predetermined forming conditions by using a hot filament CVD (Chemical Vapor Deposition) method.
[0006]
Finally, by etching and removing the sacrificial layer, the diamond film formed on the sacrificial layer is lifted off and removed.
[0007]
In the above steps, since the growth start rate of the diamond film on the sacrificial layer is reduced, a discontinuous diamond film is formed on the sacrificial layer (the diamond film on the cathode electrode has a continuous shape). It is formed.). Therefore, the solution for etching the sacrificial layer can easily penetrate from between the discontinuous diamond films, so that the lift-off process of the discontinuous diamond film can be easily and reliably performed, and only the continuous diamond film is used. Can be formed on the cathode electrode.
[0008]
[Patent Document 1]
JP 2000-353467 A (FIG. 1)
[0009]
[Problems to be solved by the invention]
However, in the above-described conventional technique, there is a problem that a diamond film is formed on the side surface of the opening, and the cathode electrode and the extraction electrode are short-circuited in a finished product.
[0010]
Therefore, an object of the present invention is to provide a method of manufacturing a cold cathode display device, which can prevent a short circuit occurring between a cathode electrode and an extraction electrode.
[0011]
[Means for Solving the Problems]
In order to achieve the above object, a method for manufacturing a cold cathode display device according to claim 1 according to the present invention includes: (a) preparing a substrate having a cathode electrode; and (b) reaching the cathode electrode. Forming an insulating layer and a lead electrode laminated on the substrate having a first hole; and (c) forming a sacrificial layer so as to fill the first hole and cover the lead electrode. (D) forming a second hole having a smaller diameter than the first hole in the sacrificial layer filled in the first hole; and (e) forming the second hole. Forming an electron-emitting material; and (f) removing the electron-emitting material formed on the sacrificial layer by removing the sacrificial layer after the step (e). Is provided.
[0012]
Further, the cold cathode display device according to claim 17 according to the present invention, a transparent substrate, a stacked structure formed on the substrate and including a cathode electrode, and formed above the stacked structure, An extraction electrode having one hole, wherein the laminated structure includes a transparent conductive material layer and an opaque conductive material layer or an opaque insulating material layer having an opening at a position corresponding to the first hole. .
[0013]
Further, the cold cathode display device according to claim 18 according to the present invention is configured such that a transparent substrate, a stacked structure formed on the substrate and including a cathode electrode, and a stacked structure formed above the stacked structure, An extraction electrode having one hole, wherein the laminated structure includes a transparent conductive material layer, an opaque conductive material layer having an opening at a location corresponding to the first hole, the transparent conductive material layer and the opaque layer. A transparent insulating layer interposed between the conductive material layer and the conductive material layer.
[0014]
Further, the cold cathode display device according to claim 22 according to the present invention, a substrate having transparency, a stacked structure formed on the substrate and including a cathode electrode, and formed above the stacked structure, An extraction electrode having one hole is provided, and the laminated structure includes a transparent resistance layer and an opaque conductive material layer having an opening at a position corresponding to the first hole.
[0015]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be specifically described with reference to the drawings showing the embodiments.
[0016]
<Embodiment 1>
FIG. 1 is a plan view illustrating a configuration of a cathode substrate 100 of a display device (hereinafter, referred to as a cold cathode display device) using a cold cathode electron source manufactured by the manufacturing method of the present invention.
[0017]
In the cathode substrate 100 shown in FIG. 1, a cathode electrode 2 having a laminated structure including a transparent conductive material layer and an opaque conductive material layer is disposed on a transparent substrate (for example, a glass substrate) 1 in a stripe shape. Have been. Further, a transparent insulating layer 3 having transparency is formed on the cathode electrode 2 so as to expose an end of the cathode electrode 2. Further, on the transparent insulating layer 3, the extraction electrodes 4 are arranged in a stripe shape in a direction orthogonal to the arrangement direction of the cathode electrodes 2.
[0018]
Here, an overlapping portion of the cathode electrode 2 and the extraction electrode 4 corresponds to one pixel, and a plurality of holes are provided in the overlapping portion so that the cathode electrode 2 (specifically, the electron emission portion) is exposed from the bottom. A part 5 is perforated through the extraction electrode 4 and the transparent insulating layer 3.
[0019]
FIG. 2 is an enlarged sectional view of the cathode substrate 100 corresponding to one pixel in FIG. 1 (that is, an overlapping portion of the cathode electrode 2 and the extraction electrode 4). Here, FIG. 2 is a cross-sectional view of the cathode substrate 100 shown in FIG.
[0020]
In FIG. 2, a cathode substrate 100 is configured by laminating a transparent conductive material layer 2a, an opaque conductive material layer 2b, a transparent insulating layer 3, and an extraction electrode 4 on the substrate 1 in this order. A plurality of holes 5 extending from the surface of the extraction electrode 4 to the cathode electrode 2 are formed. Here, an electron emission portion 6 such as CNT (Cabon Nano Tube) is formed on the cathode electrode 2 exposed from the hole 5.
[0021]
Although not shown in FIG. 2, the anode substrate is provided to face the cathode substrate 100, and an outer frame for keeping a constant interval between the two substrates is attached to the outer peripheral portion. Further, the space existing between the cathode substrate 100 and the anode substrate is kept in a vacuum, and columns are provided at predetermined positions other than the outer frame in order to keep the distance between the two substrates constant.
[0022]
In the cold cathode display device shown in FIGS. 1 and 2, when a positive voltage is applied to the extraction electrode 4 with respect to the cathode electrode 2, an electric field is applied to the electron emission unit 6, and electrons are emitted from the electron emission unit 6. You. The emitted electrons collide with the phosphor screen on the anode electrode which is set to a higher positive voltage, thereby enabling the cold cathode display to emit light.
[0023]
Since the opaque conductive material layer 2b is provided between the substrate 1 and the transparent insulating layer 3 as described above, the following manufacturing method can be performed (that is, used as an exposure mask), In the cold cathode display device completed by the manufacturing method, a short circuit between the cathode electrode 2 and the extraction electrode 4 can be prevented.
[0024]
Next, the manufacturing method according to the present embodiment will be more specifically described below based on an enlarged sectional view showing the order of the steps.
[0025]
First, on a substrate 1 such as a glass substrate, a cathode electrode 2 having a laminated structure formed of a transparent conductive material layer 2a such as ITO (indium tin oxide) and an opaque conductive material layer 2b such as a metal is formed. (FIG. 3). Here, the opaque conductive material layer 2b is laminated on the transparent conductive material layer 2a.
[0026]
More specifically, a transparent conductive material layer 2a such as ITO is formed on the substrate 1 to a thickness of, for example, 200 nm by a method such as a CVD method or a sputtering method. After that, an opaque conductive material layer 2b of, for example, Al (aluminum), Cr (chromium), W (tungsten) or the like is formed in a thickness of, for example, 200 nm by the CVD method, the sputtering method, the evaporation method, or the like.
[0027]
That is, the cathode electrode 2 having a layer thickness of about 400 nm is formed on the substrate 1.
[0028]
Here, a glass substrate is used as the substrate 1 and ITO is used as the transparent conductive material layer 2a, but the substrate 1 and the transparent conductive material layer 2a have transparency in a wavelength region of light for back exposure used in a later step. If this is the case, another material can be used (for example, a transparent plastic substrate or the like can be used as the substrate 1).
[0029]
The cathode electrode 2 is processed using a normal lithography process, so that a plurality of cathode electrodes 2 having, for example, a line width of about 100 μm are arranged in a stripe shape as shown in FIG. Here, the interval between the cathode electrodes 2 is about 100 μm (FIG. 4).
[0030]
Next, a positive photosensitive material film (hereinafter, referred to as a positive resist) 10 is formed on the cathode electrode 2 by spin coating (FIG. 5).
[0031]
Next, by applying a normal lithography process, the positive resist 10 is patterned into a predetermined shape by exposure, and thereafter, is subjected to wet etching, so that a diameter of about 10 μm is formed at a predetermined position of the opaque conductive material layer 2b. Opening 11 is formed. Then, after the completion of the step, the positive resist 10 is peeled off (FIG. 6).
[0032]
Here, in the wet etching, only the opaque conductive material layer 2b is selectively etched.
[0033]
Next, a silicon cross-linked polymer having a thickness of about 6 μm is formed by spin coating so as to cover the cathode electrode 2 (specifically, the patterned opaque conductive material layer 2b and the transparent conductive material layer 2a). The transparent insulating layer 3 is formed by thermosetting (FIG. 7).
[0034]
Further, the transparent insulating layer 3 is not limited to the above-mentioned one, and may be, for example, an organic material such as polyimide, or an inorganic material such as SiO2 (silicon dioxide), SiN (silicon nitride), and SOG (spin-on-glass). You may adopt it.
[0035]
In addition to the spin coating method, a CVD method, a PVD (Physical Vapor Deposition) method, a printing method, or the like may be adopted as the forming method. The film thickness may be 1 μm or more.
[0036]
Next, a negative photosensitive material film (hereinafter referred to as a negative resist) 12 is formed on the transparent insulating layer 3 by spin coating (FIG. 8). Here, the film thickness of the negative resist 12 is desirably 1 μm or more in consideration of a lift-off process to be performed later, and is about 2 μm in the present embodiment.
[0037]
Next, by using a normal lithography technique, the negative resist 12 is exposed from the back side of the substrate 1 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material layer 2b). The negative resist 12 is light-cured (FIG. 9).
[0038]
As the light 13 for exposure at this time, light 13 having a non-uniform direction (hereinafter referred to as diffused light) 13 is used as shown in FIG.
[0039]
The exposure with the diffused light 13 is performed by, for example, setting the vertical line of the substrate 1 at an angle of about 10 to 20 degrees with respect to the parallel light, and rotating the substrate 1. Alternatively, as another method, there is a method in which a diffusion plate is provided between the substrate 1 and the light source to perform exposure. As another method, there is a method using light emitted from a flat light source.
[0040]
Returning to the method of manufacturing a cold cathode display device, after the above-described exposure step, the negative resist 12 in the non-exposed portion is removed through a development procedure such as reversal baking and development (FIG. 10). Here, in the above process, the opaque electrode material layer 2b is used as an exposure mask, and the exposure process is performed using the diffused light 13. Therefore, the width of the remaining negative resist 12 is larger than the width of the opening 11. Become.
[0041]
Next, an extraction electrode 4 of W or the like is deposited by sputtering so as to cover the transparent insulating layer 3 and the remaining negative resist 12 so that the thickness from the negative resist 12 becomes about 200 nm. (FIG. 11).
[0042]
Here, W is employed as the material of the extraction electrode layer 4. However, even if a conductive material such as Ni (nickel), Pt (platinum), Cr, Ag (silver), Al, or conductive silicon is used, Similar effects can be obtained. Further, as a forming method, an evaporation method, a CVD method, a printing method, or the like may be used.
[0043]
Thereafter, the extraction electrode 4 is patterned into the stripe shape shown in FIG. 1 by using a normal lithography technique.
[0044]
Next, the extraction electrode 4 formed on the negative resist 12 is removed by lift-off processing of the remaining negative resist 12 (FIG. 12).
[0045]
In the present embodiment, ethanol is used to remove the negative resist 12. This is because a polymer film is used as the transparent insulating layer 3 and the influence on the transparent insulating layer 3 is taken into consideration. A removal solution can be used. In order to prevent the extraction electrode 4 removed by the lift-off process from re-adhering, a means such as bubbling is effective.
[0046]
Next, anisotropic etching (for example, reactive ion etching or the like) is performed by using the extraction electrode 4 having a predetermined shape as a hard mask in the steps up to the above step, thereby reaching the cathode electrode 2 (specifically, the opening 11). The hole 5 where the transparent conductive material layer 2a is exposed (FIG. 13) is formed.
[0047]
That is, by the anisotropic etching step, as shown in FIGS. 1 and 2, a hole 5 penetrating through the extraction electrode 4 and the transparent insulating layer 3 is formed in the overlapping region between the cathode electrode 2 and the extraction electrode 4. Is established.
[0048]
Here, the anisotropic etching treatment is performed under the conditions of, for example, introducing CF4 (carbon tetrafluoride) and O2 (oxygen) as an etching gas at a shunting ratio of 4: 1 under a pressure of 100 mTorr and a high frequency power of 200 W. .
[0049]
In addition, after the anisotropic etching is completed, the polymer deposit may adhere to the side wall of the hole 5, so that the polymer deposit may be peeled off using an amine-based peeling liquid. The peeling conditions are preferably performed under conditions weaker than those in a normal peeling step in order to prevent damage to the polymer insulating layer due to the peeling step. Soak.
[0050]
Next, the positive electrode is formed by a spin coating method so as to fill the hole 5 formed in the above step and cover the extraction electrode 4 so that the film thickness from the upper surface of the extraction electrode 4 becomes 1 μm or more. A resist (hereinafter, referred to as a sacrificial layer) 14 is formed (FIG. 14). Here, the material of the sacrificial layer 14 is not particularly limited as long as it is an organic insulating material having photosensitivity. The reason why the thickness of the sacrifice layer 14 is set to 1 μm or more from the upper surface of the extraction electrode 4 is to take into account a later lift-off process.
[0051]
Next, the sacrifice layer 14 is exposed from the back surface of the substrate 1 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material 2b) using lithography technology (FIG. 15). The light for exposure 15 at this time is light having a uniform direction as shown in FIG. 15 (that is, light substantially parallel to the normal direction of the main surface of the substrate 1, hereinafter referred to as parallel light). ) 15 is used.
[0052]
Next, development is performed after the above steps, and the exposed portion of the sacrifice layer 14 is removed (FIG. 16). As a result, fine holes 16 having a predetermined shape are formed in the sacrificial layer 14. That is, in the sacrificial layer 14 filled in the holes 5, the fine holes 16 having a smaller diameter than the holes 5 are formed. Therefore, as can be seen from FIG. 16, the sacrificial layer 14 remains on the side surface of the hole 5 and on the extraction electrode 4. Further, the cathode electrode 2 (specifically, the transparent conductive material layer 2a) is exposed from the bottom surface of the fine hole 16.
[0053]
Next, the electron emission portions 6 are formed in the fine holes 16 formed in the above steps. At this time, the electron-emitting material 17 is formed on the cathode electrode 2 (specifically, the transparent conductive material layer 2a), and the electron-emitting material 17 is also formed on the sacrificial layer 14 (FIG. 17).
[0054]
As a method for forming the electron-emitting material 17, for example, a paste in which CNTs are sufficiently dispersed is applied by spin coating to the upper surface of the cathode substrate 100 in the course of manufacture formed up to the above steps, An electron emission material 17 made of CNT or the like is formed on the cathode electrode 2 and the sacrificial layer 14 by performing a drying process for 10 minutes.
[0055]
Here, since the paste has a low solid content, the film of the electron-emitting material 17 formed in the dried fine holes 16 has a shape thinly adhered to the side surfaces and the bottom of the fine holes 16 as shown in FIG. Become.
[0056]
Further, in the present embodiment, the electron emission material 17 is applied by using the spin coating method, but a method such as a printing method and a spray coating method may be adopted. Furthermore, when applying the paste containing CNTs, by applying ultrasonic cleaning, vacuum defoaming, or the like, the paste can be more efficiently applied to the fine holes 16.
[0057]
After the above steps, finally, the sacrifice layer 14 is removed by performing a lift-off process, and the electron emission material 17 attached to the sacrifice layer 14 is also removed at the same time. Thereby, the electron emission portion 6 can be formed on the cathode electrode (the transparent conductive material layer 2a) (FIG. 2).
[0058]
Here, for example, ethanol can be used for removing the sacrificial layer 14. This is because a polymer film is used as the transparent insulating layer 3 and the influence on the transparent insulating layer 3 is considered. As long as there is no influence on the others, an amine-based removing solution which is a general removing solution can be used. Further, by performing bubbling or the like when performing the removal process, it is possible to prevent the electron-emitting portion material 17 that has been lifted off from re-adhering.
[0059]
By adopting the above manufacturing method, as can be seen from FIG. 16, since the sacrificial layer 14 is formed on the side surface of the hole 5, even if the electron emission material 17 is formed in the fine hole 16, By the lift-off process, the electron-emitting material 17 attached on the sacrificial layer 14 together with the sacrificial layer 14 can be removed, and the electron-emitting material 17 can be prevented from adhering to the side surface of the hole 5. .
[0060]
Therefore, a short circuit between the cathode electrode 2 and the extraction electrode 4 in the finished product can be prevented.
[0061]
Further, by forming the transparent conductive material layer 2a and the opaque conductive material layer 2b having an opening 11 at a predetermined position on the substrate 1 having transparency, when forming the holes 5 and the fine holes 16, A lithography step of performing exposure from below the substrate 1 can be performed.
[0062]
In addition, by using the diffused light 13 in the exposure processing of the negative resist 12 and performing a simple lithography process, the hole 5 having a diameter larger than the opening 11 can be easily formed.
[0063]
Further, by using the parallel light 15 for the exposure processing of the sacrifice layer 14, a simple lithography process is performed, so that the sacrifice layer 14, which is easily filled in the inside of the hole 5, is more easily than the hole 5. The fine holes 16 having a small diameter (having the same size as the opening 11) can be formed.
[0064]
Further, since an organic insulating material is used for the sacrificial layer 14, the following effects are obtained.
[0065]
In order to surely remove the sacrifice layer 14 and the electron-emitting material formed on the sacrifice layer 14 by lift-off when removing the sacrifice layer 14, it is necessary to form the sacrifice layer 14 having a thickness of 1 μm or more. There is (if the sacrifice layer 14 is too thin, only the sacrifice layer 14 is removed and the electron emission material remains fixed on the extraction electrode layer 4 and the like).
[0066]
However, when the sacrificial layer 14 is made of an inorganic insulating material such as alumina or silicon oxide and has a thickness of 1 μm or more as in the conventional technique, stress is generated in the sacrificial layer 14 and the substrate 1 Of the transparent insulating layer 3 may be peeled off.
[0067]
Therefore, it is difficult to make the thickness of the sacrificial layer formed of the inorganic insulating material 1 μm or more, and it has been impossible to reliably perform the lift-off of the electron emission material such as CNT.
[0068]
However, when an organic insulating material is used, even if the organic insulating material is formed to a thickness of 1 μm or more, the above-described stress does not occur, so that the substrate 1 and the like are distorted, and the sacrificial layer is formed. 14 or the transparent insulating layer 3 does not peel off.
[0069]
Therefore, the organic insulating material is adopted, and the sacrificial layer 14 can be formed with a thickness of 1 μm or more. Therefore, when forming the electron emitting material, excess electron emitting material adhering on the sacrificial layer 14 is removed. The lift-off process to be performed can be easily performed.
[0070]
Further, by adopting a photosensitive material such as a resist as the sacrificial layer 14 and performing a photoresist process of exposing the sacrificial layer 14 from the opening 11, fine holes are formed in the hole 5 without dislocation. A hole 16 can be formed.
[0071]
In other words, when a photoresist process for exposing the resist from above the substrate 1 is performed as in the conventional technique, it is necessary to use a mask twice to form the holes 5 and the fine holes 16. Since the size of the hole 5 and the size of the fine hole 16 are too small, the deviation margin of the mutual mask position becomes quite severe, and it is difficult to form the fine hole 16 in the hole 5 normally.
[0072]
However, in the present embodiment, since the fixed cathode electrode 2 (specifically, the opaque conductive material layer 2b) is used as a common mask, the above-described positional displacement does not occur. The fine holes 16 can be formed in the hole 5 simply and accurately.
[0073]
<Embodiment 2>
In the first embodiment, when forming the holes 5 and the fine holes 16, the exposure, development, and removal processing using the diffused light 13 and the exposure, development, and removal processing using the parallel light 15 are performed.
[0074]
However, in the present embodiment, the hole 5 is formed by performing the exposure, development, and removal processing with the parallel light 15 and the isotropic etching processing of the sacrificial layer 14, and thereafter, the exposure with the parallel light 15 is performed. The feature is that the fine holes 16 are created by performing development and removal processing.
[0075]
Hereinafter, the manufacturing method according to the present embodiment will be specifically described based on cross-sectional views showing the order of steps.
[0076]
First, the steps up to FIG. 3 to FIG. 8 are the same as those in the first embodiment, and thus description thereof will be omitted.
[0077]
Now, in the manufacturing method according to the present embodiment, the negative resist 12 is exposed using the parallel light 15 (FIG. 18).
[0078]
Specifically, the negative resist 12 is exposed to the parallel light 15 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material layer 2b) from the back side of the substrate 1, and the negative resist 12 is exposed. The resist 12 is light-cured.
[0079]
Next, development is performed after the above process, and the negative resist 12 in the non-exposed portion is removed (FIG. 19). Here, in the above-described exposure step, the opaque conductive material layer 2b having the opening 11 was used as a mask and the exposure processing was performed using the parallel light 15, so that the width of the remaining negative resist 12 was the width of the opening 11 It is almost the same size as.
[0080]
Next, as in the first embodiment, the extraction electrode 4 is deposited so as to cover the transparent insulating layer 3 and the remaining negative resist 12 (FIG. 20).
[0081]
Next, similarly to the first embodiment, the negative resist 12 is removed by lift-off processing of the remaining negative resist 12, and the extraction electrode 4 formed on the negative resist 12 is removed. (FIG. 21).
[0082]
Next, in the present embodiment, isotropic etching such as wet etching is performed on the transparent insulating layer 3 using the extraction electrode 4 having a predetermined shape as a hard mask in the above-described steps, so that the cathode electrode 2 (The transparent conductive material layer 2a is exposed from the opening 11) (FIG. 22).
[0083]
Here, for example, a mixed solution of anisole and xylene can be used as the etching solution. Further, in this embodiment, wet etching is performed as isotropic etching, but reactive ion etching may be performed as long as there is a condition undercutting.
[0084]
Next, as in the first embodiment, the sacrifice layer 14 is formed so as to fill the hole 5 (FIG. 23), and the sacrifice layer 14 is exposed to the parallel light 15 (FIG. 24). Then, the sacrifice layer 14 in the exposed portion is removed. Thereby, the fine holes 16 can be formed (FIG. 25).
[0085]
By this step, the sacrificial layer 14 remains on the side surface of the hole 5 and on the extraction electrode 4. Further, the cathode electrode 2 (transparent conductive material layer 2a) is exposed from the bottom surface of the fine hole 16.
[0086]
Next, the electron emission portion 6 is formed on the cathode electrode 2 at the bottom of the fine hole 16 formed in the above step. At this time, the electron emitting portion 6 may be formed by the method described in the first embodiment, but the electron emitting portion 6 can also be formed by the following method.
[0087]
In the present embodiment, as a method for forming the electron-emitting portion 6, for example, iron, nickel, cobalt, or the like is vapor-deposited on the upper surface of the cathode substrate 100 which is being manufactured through the above-described steps by using a sputtering method. This forms the catalyst layer 20 on the cathode electrode 2 and the sacrificial layer 11 (FIG. 26).
[0088]
In the sputtering method, it is considered that the catalyst layer 20 does not adhere to the side walls of the fine holes 16 because the particles scattered from the target have good straightness. However, in practice, the scattered particles reach the fine holes 16 at an angle, and the catalyst layer 20 is also attached to the wall surfaces of the fine holes 16.
[0089]
Next, the sacrifice layer 14 is removed by lift-off processing, and the catalyst layer 20 adhering to the sacrifice layer 14 is also removed at the same time (FIG. 27). Thus, the catalyst layer 20 remains only on the upper surface of the cathode electrode 2 (specifically, the transparent conductive material layer 2a).
[0090]
Here, ethanol is used for removing the sacrificial layer 14. This is because a polymer film is used as the transparent insulating layer 3 and the influence on the transparent insulating layer 3 is taken into consideration. Liquid can be used. In the removal, it is effective to use a means such as bubbling in order to prevent the lifted-off catalyst layer 20 from re-adhering to the transparent insulating layer 3.
[0091]
Finally, by growing the catalyst layer 20 by a CVD method performed in an atmosphere of an organic gas such as methane gas, the electron emission portions 6 made of CNT are formed (FIG. 28).
[0092]
As described above, by performing the exposure / development / removal processing using the parallel light 15 and the isotropic etching processing of the sacrificial layer 14 in combination, the displacement margin for forming both holes is obtained as in the first embodiment. It is not necessary to consider the above, and it is possible to easily form the hole 5 and the fine hole 16 in the sacrificial layer 14 filled in the hole 5.
[0093]
Therefore, even if the electron emission material 17 is formed in the fine holes 16, the electron emission material 17 attached on the sacrifice layer 14 can be removed together with the sacrifice layer 14 in a later lift-off process. The electron emission material 17 can be prevented from adhering to the side surface.
[0094]
Therefore, a short circuit between the cathode electrode 2 and the extraction electrode 4 in the finished product can be prevented.
[0095]
<Embodiment 3>
The present embodiment is characterized in that the transparent insulating layer 3 formed on the cathode electrode 2 in the first and second embodiments is made of a photosensitive material.
[0096]
Hereinafter, the manufacturing method according to the present embodiment will be specifically described based on cross-sectional views showing the order of steps.
[0097]
First, the steps up to FIG. 3 to FIG. 6 are the same as those in the first embodiment, and thus description thereof will be omitted.
[0098]
Next, a transparent insulating layer 30 having a thickness of about 6 μm is formed so as to cover the cathode electrode 2 (specifically, the patterned opaque conductive material layer 2b and the transparent conductive material layer 2a) by a CVD method or the like. Is formed (FIG. 29).
[0099]
Here, in the present embodiment, a material having a positive photosensitivity is employed as the transparent insulating layer 30. Specifically, as the transparent insulating layer 30, a photosensitive glass paste obtained by adding an additive, a photosensitive polyimide, or the like can be used. Further, a positive photosensitive silicone crosslinked polymer may be formed by spin coating.
[0100]
Next, an extraction electrode 4 of W or the like is deposited to a thickness of about 200 nm so as to cover the transparent insulating layer 30 by a sputtering method (FIG. 30). Thereafter, as shown in FIG. 1, the extraction electrode 4 is patterned in a stripe shape using a normal lithography technique.
[0101]
Next, a predetermined portion of the positive type transparent insulating layer 30 is exposed from the back side of the substrate 1 through the opening 11 formed in the cathode electrode 2 (specifically, the opaque conductive material layer 2b) (FIG. 31). ). Here, the parallel light 15 is adopted as light for exposure.
[0102]
Next, after developing the transparent insulating layer 30, a lift-off process of the exposed portion of the transparent insulating layer 30 is performed. By the lift-off process, the extraction electrode 4 formed on the exposed portion of the transparent insulating layer 30 is removed (FIG. 32).
[0103]
Here, a mixed solution of anisole and xylene is used as a developer. For development, a means such as bubbling is effective in preventing the lifted-off extraction electrode 4 from re-adhering.
[0104]
Next, by the processing up to the above-mentioned step, isotropic etching is performed using the extraction electrode 4 having a predetermined shape as a hard mask, thereby etching away the wall surface of the transparent insulating layer 30. Thereby, the hole 5 is formed in the transparent insulating layer 30 and the extraction electrode 4 (FIG. 33).
[0105]
Here, as the solution used in the isotropic etching, the same solution as the above-mentioned developer can be used. However, since the etching rate is slower than that of the photosensitive region, care must be taken in the etching process.
[0106]
Next, sacrificed by a spin coating method or the like so that the hole 5 formed in the above step is filled, and the film thickness from the upper surface of the extraction electrode 4 is 1 μm or more so as to cover the extraction electrode 4. The layer 31 is formed (FIG. 34).
[0107]
Here, the sacrifice layer 31 has an etching selectivity with respect to the transparent insulating layer 30. For example, when a positive photosensitive silicone cross-linked polymer is used as the transparent insulating layer 30, a normal positive resist can be used as the sacrificial layer 31. The reason why the thickness is set to 1 μm or more from the upper surface of the extraction electrode 4 is to ensure that the lift-off is successfully performed.
[0108]
The subsequent steps up to the step of forming the fine holes 16 by the lithography process using the parallel light 15 and forming the electron-method emitting portions 6 in the fine holes 16 are the same as those of the above-described other embodiments. Omitted.
[0109]
As described above, the method for manufacturing a cold cathode display device according to the present embodiment has the following effects.
[0110]
That is, since a material having photosensitivity is employed for the transparent insulating layer 30, steps such as applying and patterning a negative resist on the transparent insulating layer 30 as in the first and second embodiments can be omitted. In addition, the manufacturing process can be simplified.
[0111]
In the second embodiment, when forming the hole 5, isotropic etching such as wet etching is used as an etching method of the transparent insulating layer 3. However, in this method, the amount of undercut may be too large, and it may not be possible to form the holes 5 with a reduced pitch, and it may not be possible to increase the density of the holes 5.
[0112]
Therefore, in the present embodiment, as described with reference to FIGS. 32 and 33, the isotropic etching is performed after the anisotropic etching is performed in advance. Since only consideration is given to the above, etching control of the transparent insulating layer 30 can be easily performed. Therefore, the side surface of the transparent insulating layer 30 is not excessively etched, and the hole portions 5 can be formed with a narrow pitch, so that the hole portions 5 can have a high density.
[0113]
It should be noted that the sacrificial layer 31 naturally has an etching selectivity with respect to the transparent insulating layer 30, and it goes without saying that the higher the etching selectivity, the better.
[0114]
In the present embodiment, as described in the second embodiment, the hole portion is formed by performing a combination process of the exposure, development, and removal processes using the parallel light 15 and the isotropic etching process of the sacrificial layer 31. 5 and the fine holes 16 were formed. As described in the first embodiment, the exposure, development, and removal processing using the diffused light 13 and the exposure, development, and removal processing using the parallel light 15 were performed. 5 and the fine holes 16 may be formed.
[0115]
<Embodiment 4>
In the first embodiment, since cathode electrode 2 is formed in a stripe shape, the following problem may actually occur.
[0116]
As described with reference to FIG. 9, the case where the negative resist 12 is exposed to the diffused light 13 using the cathode electrode 2 (specifically, the opaque conductive material layer 2b) as a mask is shown in FIG. As described above, since the cathode electrode 2 is formed in a stripe shape, the negative resist 12 existing above a region where the cathode electrode 2 is not formed is also exposed.
[0117]
Therefore, by performing the developing process, the negative resist 12 remains above the region between the cathode electrodes 2. This state is shown in FIG. Here, FIG. 35 is a cross-sectional view when the cathode substrate 100 in the course of manufacture is viewed from the disposition direction of the cathode electrode 2 (that is, a cross-sectional view of the cathode substrate 100 in the middle of manufacture along the line AA in FIG. 1). is there.
[0118]
After that, when the extraction electrode 4 is formed and a lift-off process is performed, the extraction electrode 4 formed on the negative type resist 12 is removed together with the remaining negative type resist 12, as shown in FIG. Thus, the extraction electrode 4 does not exist above the region between the cathode electrodes 2.
[0119]
Therefore, when the etching process is performed using the extraction electrode 4 having the shape as a mask, the transparent insulating layer 3 on the region between the cathode electrodes 2 is also removed (FIG. 37). After that, even if the sacrifice layer 14 is formed, the sacrifice layer 14 in the region between the cathode electrodes 2 is removed by the exposure process using the parallel light 15 (FIG. 15).
[0120]
If the electron emission portions 6 are formed in this state, the electron emission portions 6 are also formed between the cathode electrodes 2 (FIG. 38), and as a result, a short circuit occurs between adjacent cathode electrodes 2. Sometimes.
[0121]
In order to solve such a problem, in the present embodiment, as shown in FIG. 39, in order to prevent exposure of the negative resist 12 existing above the region between the cathode electrodes 2, a source of the diffused light 13 is provided. A light shielding plate 40 is provided between the light shielding plate 40 and the substrate 1.
[0122]
Thereby, the negative resist 12 above the region between the cathode electrodes 2 can also be removed (FIG. 40). After that, the formation of the extraction electrode 4 and the lift-off process result in the removal of the negative resist 12 above the region between the cathode electrodes 2. The extraction electrode 4 can be left (FIG. 41).
[0123]
As described above, even if etching is performed using the extraction electrode 4 having the shape shown in FIG. 41 as a mask, the transparent insulating layer 3 can be left in the region between the cathode electrodes 2 (FIG. 42). Even if the electron-emitting portion 6 is formed thereafter, it is possible to completely prevent the above-described problem of short-circuit between cathodes.
[0124]
<Embodiment 5>
In the fourth embodiment, the problem caused by the cathode electrodes 2 being arranged in a stripe shape has been pointed out. However, the drawback electrodes 4 formed in the stripe shape cause the following problems. There is fear.
[0125]
That is, since the extraction electrodes 4 are arranged in a stripe shape, as shown in FIG. 43, in addition to the holes 5, a groove 50 where the cathode electrode 2 is exposed from the bottom is formed in the transparent insulating layer 3. I will. This is because the etching process was performed using the extraction electrodes 4 arranged in a stripe shape as a hard mask. Here, FIG. 43 is a diagram showing a BB cross section of the cathode substrate 100 shown in FIG.
[0126]
As can be seen from FIG. 43, when the cathode electrode 2 is exposed in the region between the extraction electrodes 4, when the cold cathode display device is operated, the cathode electrode 2 and the cathode substrate 100 are provided to face each other. An abnormal discharge may occur between the anode electrode (not shown).
[0127]
In order to solve this problem, the present embodiment employs the following manufacturing method.
[0128]
In the first embodiment, by performing the lift-off process on the negative resist 12 as described with reference to FIGS. 11 and 12, the cathode substrate 100 in the course of manufacture as shown in FIG. 44 is formed. Here, FIG. 44 is a diagram observed from the same cross-sectional direction as FIG.
[0129]
Next, a resist 51 is formed on the cathode substrate 100 shown in FIG. 44 (FIG. 45).
[0130]
Specifically, a resist 51 is applied to the entire surface of the cathode substrate 100 shown in FIG. 44 by using, for example, a spin coating method, and the extraction electrodes 4 arranged in stripes by using a general lithography technique. The resist 51 is patterned so as to completely cover the region between them.
[0131]
Next, as shown in FIG. 45, after the resist 51 is applied, similarly to the first embodiment, an etching process is performed using the extraction electrode 4 as a hard mask to form the hole 5, and thereafter the resist 51 is removed. (FIG. 46).
[0132]
Subsequent steps are the same as in the first embodiment, and a detailed description thereof will be omitted.
[0133]
As described above, in the present embodiment, the resist 51 is formed in the gap between the extraction electrodes 4 before the etching process in order to avoid removing the transparent insulating layer 3 existing under the region between the extraction electrodes 4 by etching. Therefore, the etching process for forming the hole 5 can prevent the cathode electrode 2 located below the region between the extraction electrodes 4 from being exposed. Therefore, it is possible to prevent an abnormal discharge from occurring between the anode electrode and the cathode electrode 2 due to the operation of the completed cold cathode display device.
[0134]
By the way, in each of the above embodiments, when performing the exposure process using the diffused light 13 and the parallel light 15, the laminated structure including the transparent conductive material layer 2 a and the opaque conductive material layer 2 b is formed on the transparent substrate 1. Although the case where the cathode electrode 2 (FIG. 47 (a diagram corresponding to the cross section taken along the line AA in FIG. 1)) is used as a mask has been described, similar effects can be obtained by using the following laminated structure as a mask. be able to.
[0135]
First, as shown in FIG. 48 (corresponding to the cross section AA in FIG. 1), the order of lamination of the transparent conductive material layer 2a and the opaque conductive material layer 2b is reversed, and The cathode electrode 2 having a structure in which a transparent conductive material layer 2a is laminated on the cathode electrode 2 may be employed.
[0136]
However, when the laminated structure shown in FIG. 48 is adopted, the transparent electrode material layer 2a cannot be covered normally at the edge of the opening 11 formed in the opaque conductive material layer 2b, and a step may be generated. Therefore, care must be taken in the formation method (when the laminated structure of FIG. 47 is adopted, it is not necessary to consider this).
[0137]
47 and 48, the opaque conductive material layer 2b is made of a conductive material such as a metal, but is not limited to this, and an insulating material such as polyimide colored with a pigment or the like (hereinafter, referred to as an opaque insulating material layer). You may adopt it. In this case, the transparent conductive material layer 2a alone constitutes the cathode electrode 2.
[0138]
By replacing the opaque conductive material layer 2b with the opaque insulating material layer 60, the function of the light blocking plate 40 described in the fourth embodiment can also be imposed on the opaque insulating material layer 60.
[0139]
That is, by forming a laminated structure as shown in FIGS. 49 and 50 (corresponding to the cross section taken along the line AA in FIG. 1) on the substrate 1, light can be shielded at an accurate position by a simple forming method. A light-shielding layer (the opaque insulating material layer 60 existing between the cathode electrodes 2), which has the function of the plate 40 and has become a part of the opaque insulating material layer 60, can be formed.
[0140]
The function of the light-shielding plate 40 can also be imposed on the opaque conductive material layer 2b. In this case, a laminated structure as shown in FIG. 51 (corresponding to the AA cross section in FIG. 1) is formed on the substrate 1. Need to be created.
[0141]
That is, in FIG. 51, an opaque conductive material layer 2b which also has a function as a light shielding plate and has an opening 11 is formed on the substrate 1. Next, a transparent insulating layer 61 having transparency is formed so as to cover the upper surface of the substrate 1 and the opaque conductive material layer 2b. Then, a stripe-shaped transparent conductive material layer 2a (in this case, the transparent conductive material layer 2a alone constitutes the cathode electrode 2) is formed on the upper surface of the transparent insulating layer 61.
[0142]
Here, as the transparent insulating layer 61, a vitrified material formed by printing a glass paste by screen printing and baking at 550 ° C., for example, may be employed, or may be made of SiO 2, SiN, SOG (spin-on glass). ) Can also be adopted.
[0143]
As in the laminated structure (transparent conductive material layer 2a / transparent insulating film 61 / opaque conductive material layer 2b) shown in FIG. 51, the transparent insulating layer 61 is formed between the opaque conductive material layer 2b and the transparent conductive material layer 2a. The reason for this is to electrically insulate between the conductive material layers 2a and 2b and to prevent the adjacent cathode electrodes 2 from being electrically connected to each other in the cathode electrode 2 formed in a stripe shape. is there.
[0144]
Further, the laminated structure shown in FIG. 51 uses, for example, a metal such as Cr, Al, or W as the opaque conductive material layer having a function as the light-shielding plate 40, and thus can be thinner than the case where an insulator is used. Thus, there is an advantage that the influence of the coverage on the upper layer can be suppressed and patterning can be easily performed.
[0145]
In addition to these laminated structures, the following laminated structures can also be adopted.
[0146]
That is, as shown in FIG. 52 (corresponding to the cross section taken along the line AA in FIG. 1), an opaque cathode electrode 2 having an opening 11 is disposed on the substrate 1 in a stripe shape. , And a transparent resistive layer 62 having the same transparency in a stripe shape so as to cover the cathode electrode 2 may be employed. Here, as the transparent resistance layer 62, ITO having a glass paste or the like can be employed.
[0147]
By employing the laminated structure (cathode electrode 2 / transparent resistance layer 62) shown in FIG. 52, the electron emission portion 6 is formed on the transparent resistance layer 62, so that the emission current value from the electron emission portion 6 is stabilized. Can be done. Therefore, in the cold cathode display device employing the laminated structure, it is possible to reduce the variation in the luminance of the display screen.
[0148]
Note that, as shown in FIG. 53 (corresponding to the cross section AA in FIG. 1), the same effect can be obtained even if the order of lamination of the cathode electrode 2 and the transparent resistance layer 62 is reversed. . That is, the opaque cathode electrode 2 having the opening 11 is formed on the transparent resistance layer 62 having transparency.
[0149]
Further, in the case where the laminated structure having the transparent resistance layer 62 is employed, if the light-shielding plate 40 described in the fourth embodiment is provided, for example, FIGS. 54 and 55 (corresponding to the AA section in FIG. 1). (FIG. 2), that is, a transparent insulating layer 63 having transparency between the substrate and the laminated structure including the cathode electrode and the transparent resistance layer.
[0150]
【The invention's effect】
The method of manufacturing a cold cathode display device according to claim 1, wherein (a) preparing a substrate having a cathode electrode; and (b) providing a first hole reaching the cathode electrode. (C) filling the first hole and forming a sacrificial layer so as to cover the extraction electrode; and (d) forming the first hole. Forming a second hole having a smaller diameter than the first hole with respect to the sacrificial layer filled in, and (e) forming an electron emission material with respect to the second hole. And (f) removing the electron-emitting material formed on the sacrificial layer by removing the sacrificial layer after the step (e). A sacrificial layer is formed on the side surface of the hole. Therefore, even if an electron-emitting material is formed in the second hole, the electron-emitting material attached to the sacrificial layer together with the sacrificial layer can be removed in the subsequent step (f). Therefore, it is possible to prevent the electron emission material from adhering to the side surface of the first hole, and it is possible to solve the problem that the cathode electrode and the extraction electrode are short-circuited in the finished product.
[0151]
The cold cathode display device according to claim 17 of the present invention includes a substrate having transparency, a laminated structure formed on the substrate and including a cathode electrode, and a first structure formed above the laminated structure. Since the stacked structure includes a transparent conductive material layer and an opaque conductive material layer or an opaque insulating material layer having an opening at a location corresponding to the first hole, In addition, a lithography step by exposure can be performed from below the substrate using the opaque material layer as a mask.
[0152]
The cold cathode display device according to claim 18 of the present invention includes a transparent substrate, a laminated structure formed on the substrate and including a cathode electrode, and a first structure formed above the laminated structure. An extraction electrode having holes, wherein the laminated structure includes a transparent conductive material layer, an opaque conductive material layer having an opening at a location corresponding to the first hole, the transparent conductive material layer and the opaque conductive material layer. Since it includes a transparent insulating layer interposed between the material layer and the opaque conductive material layer, a metal such as Cr, Al, or W can be used as the opaque conductive material layer. It becomes possible. Therefore, there is an advantage that the influence on the upper layer due to the coverage can be suppressed and patterning can be easily performed.
[0153]
Further, a cold cathode display device according to claim 22 of the present invention includes a transparent substrate, a stacked structure formed on the substrate and including a cathode electrode, and a first structure formed above the stacked structure. An extraction electrode having a hole, and the laminated structure includes a transparent resistance layer and an opaque conductive material layer having an opening at a position corresponding to the first hole. A lithography step by exposure can be performed from below the substrate, which is a mask. Further, an electron emission portion can be formed on the resistance layer, and the emission current value from the electron emission portion can be stabilized. Therefore, in the cold cathode display device employing the laminated structure, it is possible to reduce the variation in the luminance of the display screen.
[Brief description of the drawings]
FIG. 1 is a plan view showing a state of a cathode substrate formed by a manufacturing method according to a first embodiment.
FIG. 2 is an enlarged cross-sectional view illustrating a configuration of a cathode substrate corresponding to one pixel.
FIG. 3 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 4 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 5 is an enlarged cross-sectional view of the cathode substrate for describing steps of the manufacturing method according to the first embodiment.
FIG. 6 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 7 is an enlarged cross-sectional view of the cathode substrate for describing steps of the manufacturing method according to the first embodiment.
FIG. 8 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 9 is an enlarged cross-sectional view of the cathode substrate for describing steps of the manufacturing method according to the first embodiment.
FIG. 10 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 11 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 12 is an enlarged cross-sectional view of the cathode substrate for describing steps of the manufacturing method according to the first embodiment.
FIG. 13 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 14 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 15 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 16 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 17 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the first embodiment.
FIG. 18 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to a second embodiment.
FIG. 19 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 20 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 21 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 22 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 23 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 24 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 25 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 26 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 27 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 28 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the second embodiment.
FIG. 29 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the third embodiment.
FIG. 30 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the third embodiment.
FIG. 31 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the third embodiment.
FIG. 32 is an enlarged cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the third embodiment.
FIG. 33 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the third embodiment.
FIG. 34 is an enlarged cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the third embodiment.
FIG. 35 is a cross-sectional view for describing a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 36 is a cross-sectional view for describing a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 37 is a cross-sectional view for describing a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 38 is a cross-sectional view for describing a problem that occurs because the cathode electrode is formed in a stripe shape.
FIG. 39 is a cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the fourth embodiment.
FIG. 40 is a cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the fourth embodiment.
FIG. 41 is a cross-sectional view of a cathode substrate for describing steps of a manufacturing method according to the fourth embodiment.
FIG. 42 is a cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the fourth embodiment.
FIG. 43 is a cross-sectional view for describing a problem that occurs because the extraction electrodes are formed in a stripe shape.
FIG. 44 is a cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the fifth embodiment.
FIG. 45 is a cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the fifth embodiment.
FIG. 46 is a cross-sectional view of the cathode substrate for describing steps of a manufacturing method according to the fifth embodiment.
FIG. 47 is a cross-sectional view showing an embodiment of a laminated structure having a function as a mask during exposure processing.
FIG. 48 is a cross-sectional view showing an embodiment of a laminated structure having a function as a mask during exposure processing.
FIG. 49 is a cross-sectional view showing an embodiment of a laminated structure having a function as a mask during exposure processing.
FIG. 50 is a cross-sectional view showing an embodiment of a laminated structure having a function as a mask during exposure processing.
FIG. 51 is a cross-sectional view showing an embodiment of a stacked structure having a function as a mask during exposure processing.
FIG. 52 is a cross-sectional view showing an embodiment of a laminated structure having a function as a mask during exposure processing.
FIG. 53 is a cross-sectional view showing an embodiment of a laminated structure having a function as a mask during exposure processing.
FIG. 54 is a cross-sectional view showing an embodiment of a laminated structure having a function as a mask during exposure processing.
FIG. 55 is a cross-sectional view showing an embodiment of a stacked structure having a function as a mask during exposure processing.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Substrate, 2 Cathode electrode, 2a Transparent conductive material layer, 2b Opaque conductive material layer, 3, 30, 61, 63 Transparent insulating layer, 4 Extraction electrode, 5 holes, 6 Electron emission section, 10 Positive photosensitive material Film (positive resist), 11 opening, 12 negative photosensitive material film (negative resist), 13 diffused light, 14, 31 sacrifice layer, 15 parallel light, 16, micropore, 17 electron emission material, 20 Catalyst layer, 40 light shielding plate, 50 groove, 51 resist, 60 opaque insulating material layer, 62 transparent resistance layer, 100 cathode substrate.

Claims (23)

(A) providing a substrate having a cathode electrode;
(B) forming an insulating layer and an extraction electrode laminated on the substrate, the first layer having a first hole reaching the cathode electrode;
(C) filling the first hole and forming a sacrificial layer so as to cover the extraction electrode;
(D) forming a second hole having a smaller diameter than the first hole with respect to the sacrificial layer filled in the first hole;
(E) forming an electron emitting material for the second hole;
(F) removing the electron-emitting material formed on the sacrificial layer by removing the sacrificial layer after the step (e);
A method for manufacturing a cold cathode display device, comprising: The step (a) comprises:
Forming a layered structure including a transparent conductive material layer and an opaque conductive material layer or an opaque insulating material layer having an opening at a position corresponding to the first hole on the transparent substrate. ,
The method for manufacturing a cold cathode display device according to claim 1, wherein: The step (a) comprises:
On the substrate having transparency, a transparent conductive material layer, an opaque conductive material layer having an opening at a position corresponding to the first hole, between the transparent conductive material layer and the opaque conductive material layer 2. The method according to claim 1, further comprising a step of forming a laminated structure including an interposed transparent insulating layer. The step (a) comprises:
On the transparent substrate, including a transparent resistance layer, and an opaque conductive material layer having an opening at a location corresponding to the first hole, including a step of forming a laminated structure,
The method for manufacturing a cold cathode display device according to claim 1, wherein: The step (b) comprises:
Using the opaque insulating material layer or the opaque conductive material layer as a mask, using a first lithography technique of irradiating light from the lower surface side of the substrate, is a step of forming the first hole,
5. The method for manufacturing a cold cathode display device according to claim 2, wherein The step (b) comprises:
Using the first lithography technique by exposure to diffused light, is a step of forming the first hole,
The method of manufacturing a cold cathode display device according to claim 5, wherein: The step (b) comprises:
(B-1) laminating the transparent insulating layer and a photosensitive resist in this order so as to cover the substrate on which the cathode electrode is formed;
(B-2) a step of leaving a portion of the resist exposed by the first lithography step on the insulating layer;
(B-3) forming the extraction electrode so as to cover the remaining resist and the insulating layer;
(B-4) removing the extraction electrode on the remaining resist by a lift-off process;
(B-5) after the step (b-4), a step of removing the insulating layer and forming the first hole by etching using the extraction electrode layer as a mask. ,
The method of manufacturing a cold cathode display device according to claim 6, wherein: The step (b) comprises:
(Ba) laminating the insulating layer having photosensitivity and the extraction electrode layer in this order so as to cover the substrate on which the cathode electrode is formed;
(Bb) forming the first hole by removing the exposed portion of the insulating layer and the extraction electrode formed on the exposed insulating layer by the first lithography step; With the process,
The method of manufacturing a cold cathode display device according to claim 6, wherein: The step (b) comprises:
After forming a third hole using the first lithography technique by exposure to parallel light, forming the first hole by performing isotropic etching on the third hole Is,
The method of manufacturing a cold cathode display device according to claim 5, wherein: The step (b) comprises:
(B-10) laminating the transparent insulating layer and the photosensitive resist in this order so as to cover the substrate on which the cathode electrode is formed;
(B-11) leaving a portion of the resist exposed by the first lithography step on the insulating layer;
(B-12) forming the extraction electrode so as to cover the remaining resist and the insulating layer;
(B-13) forming the third hole by removing the extraction electrode on the remaining resist by a lift-off process;
(B-14) after the step (b-13), performing isotropic etching using the extraction electrode layer as a mask to remove the insulating layer and form the first hole, Have,
The method for manufacturing a cold cathode display device according to claim 9, wherein: The step (b) comprises:
(BA) stacking the insulating layer having photosensitivity and the extraction electrode layer in this order so as to cover the substrate on which the cathode electrode is formed;
(B-B) The third hole is formed by removing the exposed portion of the insulating layer and the extraction electrode formed on the exposed insulating layer by the first lithography step. Process and
(BC) after the step (bB), performing the isotropic etching using the extraction electrode as a mask to form the first hole.
The method for manufacturing a cold cathode display device according to claim 9, wherein: The step (a) comprises:
Preparing the substrate having a plurality of the cathode electrodes,
The step (b) comprises:
In a region between the cathode electrodes, it is a step of performing the first lithography step while shielding the light,
The method of manufacturing a cold cathode display device according to any one of claims 5 to 11, wherein: The extraction electrode is plural,
The step (b) comprises:
In a state where the region between the extraction electrodes is masked, is a step of performing an etching process using the extraction electrode as a mask,
13. The method for manufacturing a cold cathode display device according to claim 7, wherein: The step (c) comprises:
Forming the sacrificial layer having photosensitivity,
The step (d) includes:
Using the opaque conductive material layer or the opaque insulating material layer as a mask, using a second lithography technique of irradiating light from the lower surface side of the substrate, is a step of forming the second hole,
14. The method for manufacturing a cold cathode display device according to claim 2, wherein: The step (d) includes:
Using the second lithography technique by exposure to parallel light, is a step of forming the second hole,
The method for manufacturing a cold cathode display device according to claim 14, wherein: The step (c) comprises:
A step of forming the sacrificial layer, which is an organic insulating material,
The method of manufacturing a cold cathode display device according to any one of claims 1 to 15, wherein: A substrate having transparency;
A laminated structure formed on the substrate and including a cathode electrode;
An extraction electrode formed above the laminated structure and having a first hole,
The laminated structure has
A transparent conductive material layer, including an opaque conductive material layer or an opaque insulating material layer having an opening at a location corresponding to the first hole,
A cold cathode display device characterized by the above-mentioned. A substrate having transparency;
A laminated structure formed on the substrate and including a cathode electrode;
An extraction electrode formed above the laminated structure and having a first hole,
The laminated structure has
A transparent conductive material layer, an opaque conductive material layer having an opening at a position corresponding to the first hole, and a transparent insulating layer interposed between the transparent conductive material layer and the opaque conductive material layer,
A cold cathode display device characterized by the above-mentioned. The laminated structure has
It is formed by laminating the opaque insulating material layer on the transparent conductive material layer,
The cold cathode display device according to claim 17, wherein: The cathode electrode is plural,
The opaque insulating material layer is formed between the adjacent cathode electrodes,
20. The cold cathode display device according to claim 17, wherein: The laminated structure has
Forming the transparent insulating layer so as to cover the opaque conductive material layer formed on the substrate, and forming the transparent conductive material layer on the transparent insulating layer,
19. The cold cathode display device according to claim 18, wherein: A substrate having transparency;
A laminated structure formed on the substrate and including a cathode electrode;
An extraction electrode formed above the laminated structure and having a first hole,
The laminated structure has
A transparent resistance layer, including an opaque conductive material layer having an opening at a location corresponding to the first hole,
A cold cathode display device characterized by the above-mentioned. The cathode electrode is plural,
The stacked structure further includes a light blocking plate disposed between the cathode electrodes,
23. The cold cathode display device according to claim 22, wherein:

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