JP2004253156A - Charged particle beam device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a charged particle beam device capable of irradiating charged particle beams with scarce attenuation on an object for treatment. <P>SOLUTION: The charged particle beam device is provided with a housing equipped with a charged particle beam generating device generating charged particle beams, a vacuum chamber housing the charged particle beam generating device, a beam taking-out channel allowing the passage of charged particle beams generated from the charged particle beam generating device, and a beam-emitting opening allowing the charged particle beams passing through the beam taking-out channel to be emitted outside toward the object for treatment; a holding means for holding the object for treatment arranged apart from the beam-emitting opening; and a drive means for moving the holding means relatively to the housing. The housing and the holding means are arranged in a space where prescribed gas exists, and is further provided with a differential pumping device for pumping out gas infiltrating into a gap between the end face of the housing fitted to the beam-emitting opening and the holding means outside the housing through the housing. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a charged particle beam device, and more particularly to a charged particle beam device having a non-contact seal structure.
[0002]
[Prior art]
This type of charged particle beam device cures or modifies the resin, modifies the physical properties of the surface of the processing object, cleans the surface of the processing object, synthesizes or decomposes the compound, We cure interlayer insulating films and sterilize medical instruments.
[0003]
2. Description of the Related Art In recent years, integrated circuits (ICs) have been increasingly integrated or operated at a higher speed. In this context, attention has been paid to the use of low dielectric constant insulating films for multilayer wiring layers. The insulating film is usually made of an organic material, and has many irregularities formed on the surface thereof. When a circuit pattern is projected and exposed on a wafer surface through an insulating film in a state where the unevenness is left, light is distorted due to the unevenness and uniform exposure cannot be performed. Therefore, the exposure process is performed after the surface of the insulating film is polished and flattened using a CMP technique or the like. However, simply polishing the surface of the insulating film makes polishing difficult due to the elasticity of the insulating film made of an organic material. Therefore, before the surface polishing, a treatment for curing or curing the insulating film by irradiating the insulating film with a charged particle beam (for example, an electron beam) is performed.
[0004]
[Problems to be solved by the invention]
When the insulating film applied on the entire surface of the wafer is cured, it is necessary to uniformly introduce electrons in both directions and in the depth direction for planarization by surface polishing after curing.
[0005]
However, in a conventional charged particle beam apparatus for irradiating an electron beam of this type, the electron generator (thermal cathode and grid) is housed in a small tube, and the opening of the small tube for emitting the electron beam is sealed with a thin film. By stopping, the inside of the small tube was maintained in a high vacuum state, so that the electron beam emitted from the small tube was attenuated when passing through the thin film, and the energy of each electron fluctuated. Are arranged in a large number and the electron beam is irradiated on the insulating film. Therefore, there is a problem that the electron density is increased in a portion where the electron beams overlap. For this reason, conventionally, the distance and pressure between the vacuum miniature tube and the insulating film were adjusted to make the energy distribution of individual electrons uniform over the entire surface of the wafer, thereby making the electrons uniform in the plane and depth directions. However, when the type or thickness of the insulating film changes, setting the conditions has become a serious task.
[0006]
Furthermore, when the electron beam is irradiated through the thin film that seals the opening of the small tube, the thin film deteriorates according to the energy amount of the electron beam and the irradiation time, and it becomes necessary to periodically replace the small tube. There was also a problem that it increased.
[0007]
The present invention has been made in view of the problems of the related art, and aims to solve the problems of the related art by using a non-contact type sealing structure using differential exhaust. It is.
[0008]
[Means for Solving the Problems]
For this reason, the present invention is a charged particle beam device that performs a predetermined process by irradiating a charged particle beam to an object to be processed, the charged particle beam generator that generates a charged particle beam, and the charged particle beam generator. A vacuum chamber for accommodating the charged particle beam generated by the charged particle beam generator, a beam extraction passage allowing passage of the charged particle beam, and the charged particle beam that has passed through the charged particle beam extraction passage A housing having a beam emission opening that allows emission to the outside toward an object, and the beam emission opening side of the housing, which is disposed apart from the beam emission opening, Holding means for holding the object to be processed, and driving means for moving the holding means relative to the housing; The jing, the holding means and the driving means are arranged in a space in which a predetermined gas is present, and enter the gap between the end face of the housing provided with the beam emission opening and the holding means. It is an object of the present invention to provide a charged particle beam device provided with a differential exhaust device for exhausting gas to the outside of the housing via the housing.
[0009]
By adopting such a configuration, for example, when the charged particle beam device is arranged in the atmosphere, most of the air that has entered the gap between the end surface of the housing and the holding means is in the atmosphere by the differential exhaust device through the housing. Exhausted. Thereby, the beam emission opening and the periphery thereof are maintained at a predetermined degree of vacuum, and the charged particle beam emitted from the beam emission opening toward the processing object is irradiated on the processing object with almost no attenuation. can do. Therefore, according to the present invention, it is not necessary to use a thin film which has been conventionally required, and the running cost can be reduced.
[0010]
Further, since the holding means is relatively moved with respect to the end face of the housing, the charged particle beam is formed in a rectangular shape, and the object to be processed is sequentially irradiated with the charged particle beam from one end to the other end. Thereby, it becomes possible to uniformly irradiate the surface of the object to be processed. For example, even when an insulating film is employed as the object to be processed, the insulating film can be uniformly cured in the plane and in the thickness direction. it can.
[0011]
Further, by providing the differential exhaust device, the holding means can be placed outside the vacuum chamber, whereby the size of the vacuum chamber can be reduced. Further, by fixing the vacuum chamber and moving the holding means, the vacuum chamber can be simplified.
[0012]
In addition, when the holding device is caused to reciprocate with respect to the charged particle beam, the dose amount, that is, the irradiation amount to the object to be processed can be controlled only by controlling the beam current and the moving speed of the holding device. It becomes. Thereby, the controllability of the dose amount of the electron beam can be improved. Further, by changing (controlling) the acceleration voltage of the charged particle beam when moving the holding means, it is possible to control the reforming in the depth direction of the insulating film.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, an embodiment of the present invention will be described with reference to FIG.
An electron beam device as a charged particle beam device according to an embodiment of the present invention is for irradiating an electron beam as a charged particle beam to an insulating film as a processing target to cure the insulating film. is there. Of course, the present invention is not limited to such an example, and any object such as a resin, a compound, or a medical device can be used as the object to be treated. By irradiating the resin with an electron beam, the resin can be cured or modified. By irradiating the compound with the electron beam, the compound can be synthesized or decomposed. Thereby, sterilization of the medical instrument can be achieved. It is also possible to improve the physical properties of the surface of the processing object and to clean the surface of the processing object.
[0014]
The electron beam device includes an electron beam generator 4 that can generate the electron beam 2 and a housing 6 that houses the electron beam generator 4.
The housing 6 has a flat end surface 12 that can be arranged so as to face an insulating film 10 as a processing target applied to the wafer 8. The housing 6 also has a vacuum chamber 14 for accommodating the electron beam generator 4, a beam extraction passage 16 allowing passage of the electron beam 2 generated from the electron beam generator 4, and a beam extraction passage 16. And a beam emission opening 18 that allows the emitted electron beam to be emitted to the outside of the housing 6 toward the insulating film 10. The vacuum chamber 14 has a first opening 17 that allows the passage of the electron beam 2 generated from the electron beam generator 4. The beam emission opening 18 is formed in the end surface 12 of the housing 6 and communicates with the beam extraction passage 16. The beam extraction passage 16 has a second opening 19 on the upper side in the figure, and the second opening 19 communicates with the first opening 17 of the vacuum chamber 14 to allow passage of the electron beam 2. Tolerate. The second opening 19 communicates with the beam emission opening 18 via the beam extraction passage 16.
[0015]
A high vacuum pump 20 that evacuates the vacuum chamber so that the vacuum chamber is in a high vacuum state is provided at an upper portion of the housing. As an example of the high vacuum pump, a turbo molecular pump can be used.
[0016]
The electron beam generator 4 includes a cathode 22 that emits the electron beam 2, an anode 24 that is provided downstream of the electron beam emission direction and functions as an electron beam acceleration electrode, and a lens that condenses the electron beam passing through the anode 24. 26. The lens 26 can generate an electron beam having a rectangular cross section.
[0017]
The housing 6 further includes a diaphragm 28 having one end communicating with the first opening 17 of the vacuum chamber and the other end communicating with the second opening 19 of the beam extraction passage. The cross sections of the first opening 17, the aperture 28, the beam extraction passage 16, and the beam emission opening 18 are larger than the cross section of the electron beam so that the rectangular electron beam can pass therethrough. Moreover, it has a rectangular shape corresponding to the shape of its cross section (see FIG. 2 for the shape of the beam extraction passage 16). The length of the rectangular beam in the longitudinal direction is preferably equal to or larger than the diameter of the wafer so that the insulating film 10 applied to the wafer 8 can be uniformly irradiated. Therefore, the longitudinal length of the rectangular beam emission opening 18 is equal to or larger than the diameter of the wafer.
[0018]
In the present embodiment, the electron beam shape is a rectangular shape, and the insulating film is irradiated with the rectangular electron beam at a wafer diameter or more on the surface of the insulating film. The insulating film may be irradiated with the point-like electron beam by oscillating it in a direction perpendicular to the traveling direction of the wafer with a known deflection coil so that the surface of the insulating film has a diameter equal to or larger than the wafer diameter.
[0019]
In this case, the amplitude speed (that is, amplitude frequency) of the point-like electron beam needs to be sufficiently higher than the speed at which the wafer is moved by the driving device.
For example, if the point beam diameter is about 100 μm and the wafer moving speed is 10 mm / s, and if the amplitude frequency of the point electron beam is 5 kHz, the electron beam overlaps about 100 times at an arbitrary position on the insulating film. By sequentially irradiating this from one end to the other end of the wafer, it is possible to irradiate the entire surface of the insulating film almost uniformly.
[0020]
Also, the cross sections of the first opening, the aperture, the beam extraction passage, and the beam emission opening for passing a point-like electron beam having an amplitude are larger than the cross sections when passing through each part of the electron beam. It is large and has a rectangular shape corresponding to the shape of its cross section.
[0021]
In the present embodiment, since the throttle portion 28 is provided between the vacuum chamber 14 and the beam extraction passage 16, it is possible to temporarily prevent air from entering the vacuum chamber via the beam extraction passage. Can be. However, the aperture 28 need not always be provided, and the first opening 17 of the vacuum chamber may be directly connected to the second opening 19 of the beam extraction passage.
[0022]
The electron beam device also includes a holding device 30 as holding means, and a driving device 32 as driving means for moving the holding device 30 relative to the housing 6. In the present embodiment, the housing 6 is fixed, and the holding device 30 is moved with respect to the housing 6. Of course, it is also possible to fix the holding device 30 and move the housing 6 side. The holding device 30 is arranged on the side of the beam emission opening of the housing 6 and is spaced apart from the beam emission opening 18. The holding device 30 has a recess 33 for receiving the wafer 8 such that the insulating film 10 applied to the surface of the wafer 8 and the surface of the holding device 30 are substantially flush with each other when the wafer 8 is held. Is formed. Further, the holding device 30 includes a well-known chuck mechanism (not shown) capable of adsorbing a wafer by vacuum force or electrostatic force.
[0023]
The holding device 30 can be provided with a heater as a temperature raising means for raising the temperature of the insulating film. When a temperature raising means such as a heater is attached to the holding device 30, the function of curing the insulating film can be improved. This is because heat treatment such as water removal can be performed by heating the insulating film.
[0024]
The housing 6, the holding device 30, and the driving device 32 are arranged in the atmosphere. However, a housing (not shown) that covers the housing 6, the holding device 30, and the driving device 32 is provided to form a closed space, and the closed space is filled with an inert gas, and the housing 6 and the holding device 30 are filled. And the driving device 32 may be covered with an inert gas. With such a configuration, the vicinity of the beam emission opening 18 can be made an inert gas atmosphere, and adverse effects such as oxidation of the oxygen in the air on the insulating film can be reduced.
[0025]
The electron beam device may further include a second annular groove for supplying an inert gas to an outer peripheral side of the annular groove, and further include a means for supplying an inert gas to the second annular groove. An inert gas supply pump and an inert gas storage tank storing the inert gas may be provided.
[0026]
The inert gas supply pump communicates with the second annular groove, and pumps inert gas from the inert gas storage tank to the second annular groove in response to a command from the control device.
With this configuration, the vicinity of the beam emission opening can be made to be in an inert gas atmosphere without providing a housing for covering the housing, the holding device, and the driving device with the inert gas.
[0027]
The driving device 32 can reciprocate the holding device 30 in the left-right direction in FIG. 1, thereby holding the gap T between the end surface 12 of the housing 6 and the holding device 30 almost constant, and 30 can be moved relative to the end surface 12 of the housing. In the present embodiment, the driving device 32 can also reciprocate the holding device 30 in the vertical direction in FIG. 1 so that the gap T between the end surface 12 of the housing and the holding device 30 can be adjusted. Such a driving device 32 can be constituted by any known actuator. In the present invention, it is sufficient that the holding device can reciprocate in the left-right direction in FIG.
[0028]
In the present embodiment, since the wafer 8 and the holding device 30 for mounting the wafer are placed outside the vacuum chamber, the size of the vacuum chamber can be reduced.
In the present embodiment, a control device 34 for controlling the electron beam generating device 4 and the driving device 32 is provided. The electron beam generator 4 generates a rectangular electron beam 2 based on a command from the controller 34. When the electron beam 2 is generated, the control device 34 gives a command to the driving device 32 in synchronization with the electron beam 2, and the driving device 32 moves the wafer 8 and the holding device 30 to the left in the drawing at a constant speed. Thus, the insulating film 10 of the wafer 8 is scanned by the rectangular electron beam 2 and the insulating film 10 can be uniformly irradiated. When the process at the time of the forward movement is completed, the control device 34 gives a command to the driving device 32, and the driving device 32 moves the wafer 8 and the holding device 30 rightward in the drawing at a constant speed. If the insulating film 10 is not sufficiently cured during the forward movement, the insulating film 10 can be further irradiated with the electron beam 2 during the backward movement. When the process at the time of return is completed, the left end of the wafer 8 returns to a position slightly to the right of the position where the electron beam is irradiated. Then, when it is determined that the insulating film 10 is sufficiently hardened, the control device 34 gives a command to the driving device 32, and the driving device 32 further moves the wafer and the holding device 30 rightward in the drawing, and moves the wafer 8 It is shifted to a position that does not face the end face 12 of the housing 6. Thus, the processed wafer can be replaced with an unprocessed wafer.
[0029]
The controller 34 can also control the accelerating voltage and beam current of the electron beam, the number of reciprocations of the holding device by the driving device, and the moving speed according to the type and thickness of the insulating film applied to the wafer. This makes it possible to cure the insulating film 10 more uniformly.
[0030]
On the end face 12 of the housing 6, a gap sensor 36 for detecting a gap T between the end face 12 of the housing and the holding device 30 is provided. The signal from the gap sensor 36 is transmitted to the control device 34. When the controller 34 receives the signal related to the gap T from the gap sensor 36, if the gap T is different from the predetermined dimension, the controller 34 gives a command to the driving device 32 to move the holding device 30 up and down, and Is adjusted to a desired size.
[0031]
A vacuum gauge 38 as a measuring means is attached to the housing 6. The vacuum gauge 38 can communicate with the vacuum chamber 14 and measure the pressure in the vacuum chamber. A signal from the vacuum gauge 38 is also transmitted to the control device 34. The control device 34 that has received the signal from the vacuum gauge 38 controls the driving device 32 based on the pressure in the vacuum chamber, and thereby can control the gap T. For example, when the control device 34 determines that the pressure in the vacuum chamber is high, that is, the degree of vacuum in the vacuum chamber is low based on a signal from the vacuum gauge 38, the controller 34 between the end surface 12 of the housing and the holding device 30. The driving device 32 is controlled so that the gap T becomes smaller, and the holding device 30 is brought closer to the housing end surface 12. Accordingly, the amount of air entering from the gap T is suppressed, and a decrease in the degree of vacuum in the vacuum chamber can be prevented.
[0032]
The electron beam device also exhausts air entering the gap or gap T between the end face 12 of the housing provided with the beam emission opening 18 and the holding device 30 to the outside of the housing via the housing 6. A differential exhaust device 40 is provided.
[0033]
The differential exhaust device 40 communicates with the single annular groove 42 provided in the end face 12 of the housing 6 around the beam emission opening 18, and communicates with the beam extraction passage 16 and the annular groove 42. And a vacuum pump device 44 for evacuating the inside and the inside of the annular groove 42. An annular groove 42 as a differential exhaust groove extends into the housing in parallel with the beam extraction passage 16. The annular groove 42 also surrounds the beam emission opening 18 as shown in FIG. 2 and has a rectangular shape corresponding to the shape of the beam emission opening 18. As a result of such a shape adjustment, the distance from the beam emission opening 18 to the annular groove 42 becomes substantially uniform, and differential exhaust can be performed uniformly around the beam emission opening 18. It has become. In the present embodiment, the vacuum pump device 44 includes a first vacuum pump 46 for evacuating the beam extraction passage 16 and a second vacuum pump 48 for evacuating the annular groove 42. The first vacuum pump 46 communicates with the beam extraction passage 16 via a first exhaust passage 50 formed in the housing 6. The first exhaust passage 50 extends outward from the beam extraction passage 16 in a direction orthogonal to the beam extraction passage 16. The second vacuum pump 48 communicates with the annular groove 42 via a second exhaust passage 52 formed in the housing 6. The second exhaust passage 52 extends outward from the annular groove 42 in a direction perpendicular to the annular groove 42. The first exhaust passage 50 and the second exhaust passage 52 extend in parallel with each other.
[0034]
Next, the operation of the present embodiment will be described.
The vacuum chamber 14 is for maintaining an environment necessary for generating an electron beam. In order to maintain a high vacuum in the vacuum chamber 14, the control device 34 operates the high vacuum pump 20 including a turbo molecular pump or the like to keep the vacuum chamber 14 constantly evacuated. Further, the control device 34 also operates the vacuum pump device 44 to keep the beam extraction passage 16 and the annular groove 42 constantly evacuated.
[0035]
Further, the control device 34 gives an instruction to the driving device 32 to move the holding device 30. In synchronization with this, the control device 34 operates the electron beam generator 4, and the electron beam generator 4 generates a rectangular electron beam 2. The electron beam 2 generated by the electron beam generator passes through the first opening 17, the aperture 28, the beam extraction passage 16, and the beam emission opening 18, and travels through the insulating film 10 from one end to the other end. Irradiate sequentially. There is a possibility that air from the outside leaks through the gap T near the insulating film 10 where the electron beam 2 reaches, and the pressure near the insulating film 10 is higher than the pressure in the vacuum chamber. However, by suppressing the gap between the end face 12 of the housing 6 and the insulating film 10 to a maximum of 100 μm or less and exhausting air leaking from the outside by the second vacuum pump 48 through the differential exhaust groove 42, the beam The vicinity of the emission opening 18 can be maintained at a degree of vacuum (10 Torr) or less at which the electron beam 2 is not so attenuated. As described above, in the present embodiment, the insulating film 10, the wafer 8, the holding device 30 for mounting them, and the driving device 32 for driving the holding device 30 do not need to be housed in the vacuum chamber. It becomes possible to.
[0036]
As described above, the electron beam 2 is rectangular, and its length in the longitudinal direction is equal to or larger than the diameter of the wafer 8. Therefore, for example, the entire surface of the insulating film 10 can be irradiated with the electron beam 2 by moving the holding device one way in the left direction in FIG. The rectangular beam is a uniform beam, and a uniform electron beam can be applied to the insulating film 10 by keeping the moving speed of the holding device constant. Thereby, the uniformity of the dose with respect to the surface of the insulating film can be improved.
[0037]
Further, by changing the moving speed of the holding device 30 and the beam current of the electron beam by the control device 34, the amount of electron energy, that is, the amount of electricity applied to the insulating film 10 can be controlled. That is, the controllability of the dose of the electron beam can be improved.
[0038]
Further, by changing the acceleration voltage of the electron beam by the control device 34, the depth in the thickness direction of the insulating film 10 through which the electron beam passes can be changed. Therefore, by changing the accelerating voltage of the electron beam each time the holding device 30 is reciprocated a plurality of times and moved in one direction, the dose in the depth direction of the insulating film is made more uniform, and Can be more uniformly cured.
[0039]
Further, in the present embodiment, since it is not necessary to make the vacuum chamber movable, the configuration of the entire electron beam apparatus can be simplified.
Since a step formed between the surface of the wafer and the surface of the wafer chuck mechanism is expected to adversely affect the performance of the differential evacuation seal, it is preferable to determine the depth of the wafer chuck mechanism so as to minimize such a step.
[0040]
As shown in FIG. 1, the lateral dimension of the housing 6 (in other words, the dimension of the housing 6 along the direction of movement of the holding device) and the distance from the cathode 22 at the center of the housing to the outer surface of the housing. Is defined as A, and the distance from the right end of the concave portion 33 in the drawing to the right end of the holding device 30 in the drawing is B, so as to satisfy the relationship of A <B, thereby ensuring the sealing performance of the differential exhaust device. be able to. That is, by satisfying the relationship of A <B, the housing 6 is prevented from exceeding the right end of the holding device 30 in the drawing when the holding device moves and the right end of the insulating film 10 in the drawing is irradiated.
[0041]
Further, if the distance from the left end of the concave portion 33 in the drawing to the left end of the holding device 30 in the drawing is C, it is preferable that the configuration satisfy the relationship of 2A <C. By satisfying this relationship, it is possible to ensure the sealing performance of the differential pumping device when replacing the wafer. That is, at the time of wafer replacement, the holding device 30 is moved rightward in the drawing so that the wafer 8 does not face the end surface 12 of the housing. As a result, a space is formed above the wafer 8, and the wafer can be replaced. At this time, by satisfying the relationship of 2A <C, the housing 6 is prevented from exceeding the left end of the holding device 30 in the drawing.
[0042]
Most of the air that has entered the gap T is exhausted by the vacuum pump 48 via the differential evacuation groove 42, but the remaining air leaks into the beam extraction passage 16. Normally, if the gap T is managed and a single-stage differential evacuation groove is provided, the degree of vacuum in the space defined between the surface of the holding device 30 and the differential evacuation groove 42 does not attenuate the electron beam much. Level (less than 10 Torr). However, since the electron beam generator 4 must be installed in a further high vacuum environment, the beam extraction passage 16 is evacuated by the vacuum pump 46 and air leaking into the vacuum chamber 14 in which the electron beam generator 4 is installed. Is restricted.
[0043]
In addition, the provision of the restricting portion 28 suppresses the entry of air by the restricting portion 28, thereby preventing a decrease in the degree of vacuum in the vacuum chamber.
When an object to be processed, for example, an insulating film is irradiated with an electron beam, generation of contamination such as moisture and hydrocarbons must be considered. In the present embodiment, since the beam extraction passage 16 is evacuated by the vacuum pump 46, it is possible to reduce generated contamination from entering the electron beam generator 14 and to provide a highly reliable apparatus. . Further, the provision of the throttle portion 28 can further reduce the entry of such contaminants into the vacuum chamber.
[0044]
As shown by the dotted line in FIG. 1, a normally open valve 86 that closes the beam extraction passage 16 by detecting a decrease in the degree of vacuum in the vacuum chamber 14 by a vacuum gauge 38 at the time of a power failure or a pump failure or the like. It may be. Such a valve 86 is preferably provided in the second opening 19 of the beam extraction passage 16. As a result, even if the differential pumping function is lost at the time of a power failure or pump failure and air tries to enter from the outside, the entry into the vacuum chamber is prevented by the valve 86, and contamination in the vacuum chamber due to moisture, dust, and the like is prevented. Can be prevented. Further, it is possible to prevent the cathode 22 in the electron beam generator 14 from being burned out due to a pressure increase in the vacuum chamber at the time of a power failure or a pump stop.
[0045]
In the above embodiment, the vacuum pump device is constituted by the first vacuum pump for evacuating the beam extraction passage and the second vacuum pump for evacuating the annular groove. As shown in FIG. 4, a multi-stage vacuum pump having a plurality of exhaust stages including a booster pump 55 and a main pump 56 may be used. According to such a modification, the inside of the beam extraction passage 16 is exhausted by both the booster pump 55 and the main pump 56, and the annular groove 42 is exhausted by one of the main pumps 56. The arrows shown in FIG. 3 indicate the flow of the discharged air.
[0046]
The booster pump 55 includes a booster pump inlet 58, a pair of rotors 60 for pumping air that has entered from the booster pump inlet, and a driving side of the pair of rotors 60 via a shaft 57 that supports a driving-side rotor. An electric motor 62 for driving the rotor, a booster pump outlet 64 for exhausting air to be pumped, and a bearing 59 for supporting a shaft 57 are provided. The booster pump inlet 58 communicates with the beam extraction passage 16 via the first exhaust passage 50. The booster pump outlet 64 communicates with the main pump inlet 68 via a connection passage 66. The connection passage 66 communicates with the annular groove 42 via the second exhaust passage 52.
[0047]
The main pump 56 has five pairs of rotors 70, 72, 74, 76 and 78 (five exhaust stages) for sequentially pumping the air that has entered from the main pump inlet 68, and each driving side of the five pairs of rotors. An electric motor 80 that drives the driving-side rotor via a shaft 83 that supports the rotor, a main pump outlet 82 that discharges air pumped by a pair of rotors 78 at the final stage to the atmosphere, and supports the shaft 83. And a bearing 85.
[0048]
FIG. 4 is a schematic cross-sectional view of a pair of third-stage rotors 74 of the main pump 56. The drive rotor 74a on the left side in the figure is driven by the electric motor 80, and the other driven rotor 74b is transmitted with power via a pair of gears 84 provided at the end of a shaft 83 of the electric motor 80, so that the drive rotor 74a It is designed to be driven in synchronization with. The rotors of the other stages of the main pump 56 have the same configuration, and the rotor of the booster pump 55 has the same configuration.
[0049]
According to the above modification, a multi-stage vacuum pump having a total of six (1 + 5) exhaust stages is provided, and the rotor 60 as the exhaust stage of the booster pump 55 is in communication with the beam extraction passage 16. A pair of rotors 70 as a first stage of the pump 56 (a second stage as a multistage vacuum pump including a booster pump and a main pump) communicates with the annular groove 42. Thereby, the inside of the beam extraction passage 16 is exhausted by both the booster pump 55 and the main pump 56, and the annular groove 42 is exhausted by one of the main pumps 56. Therefore, two vacuum pumps (a beam extraction passage and an annular groove) can be evacuated by one vacuum pump, and cost can be reduced.
[0050]
Next, an electron beam device according to a second embodiment of the present invention will be described with reference to FIG. The same components as those of the electron beam device according to the first embodiment are denoted by the same reference numerals, and the description of the same components will be omitted. Further, in order to clarify the contents of the electron beam device according to the second embodiment, the holding device and the driving device are omitted in FIG.
[0051]
As shown in FIG. 5, the electron beam device according to the second embodiment further includes a second electron beam generator 4 'for generating a second electron beam 2'. The housing 6 has an enlarged dimension in a direction along the movement direction of the wafer, and has a second vacuum chamber 14 ′ for accommodating a second electron beam generator 4 ′, and a second electron beam generator 4 ′. A second beam extraction passage 16 ′ allowing the passage of the second electron beam 2 ′ generated from the device 4 ′ and a second electron beam 2 ′ passing through the second beam extraction passage 16 ′ are formed of an insulating film. And a second beam emission opening 18 ′ that permits emission toward the outside.
[0052]
The second beam emission opening 18 ′ is also formed inside the annular groove 42 similarly to the beam emission opening 18. That is, the annular groove 42 is provided on the end face 12 of the housing so as to surround the beam emitting opening 18 and the second beam emitting opening 18 ′.
[0053]
The second beam extraction passage 16 ′ communicates with a first vacuum pump 46 via a third exhaust passage 53 formed in the housing 6. The third exhaust passage 53 extends outward from the second beam extraction passage 16 ′ in a direction orthogonal to the second beam extraction passage 16 ′. Thus, not only the beam extraction passage 16 but also the second beam extraction passage 16 'is evacuated by the first vacuum pump 46.
[0054]
The second vacuum chamber 14 'is evacuated together with the vacuum chamber 14 to a high vacuum state by a high vacuum pump 20 provided at the top of the housing.
[0055]
A normally open valve (not shown) is provided not only in the beam extraction passage 16 but also in the second beam extraction passage 16 ′ to close the second beam extraction passage in the event of a power failure or pump failure. be able to.
[0056]
In the second embodiment, the electron beam generator 4 and the second electron beam generator 4 ′ are provided so that the insulating films 10 can be simultaneously irradiated with the electron beams 2 and 2 ′ having different acceleration voltages and beam currents. Therefore, the throughput for curing the insulating film 10 can be improved.
[0057]
Next, an electron beam device according to a third embodiment of the present invention will be described with reference to FIG. The same components as those of the electron beam device according to the first embodiment are denoted by the same reference numerals, and the description of the same components will be simplified or omitted.
[0058]
As in the first embodiment, the electron beam device according to the third embodiment also has an electron beam generator 4 for generating a rectangular electron beam 2 and a vacuum chamber for accommodating the electron beam device 4. A housing 106 having a housing 14 is provided.
[0059]
The shape of the housing 106 is different from that of the first embodiment, and a pair of protrusions 14a and 14b are provided at the lower end side. The pair of protrusions 14a and 14b protrude in a direction away from each other, and a through-hole 108 penetrating the pair of protrusions 14a and 14b is formed in the housing 106.
[0060]
The housing 106 further allows a passage of the electron beam 2 generated from the electron beam generator 4 to pass therethrough, and emits the electron beam 2 having passed through the beam extraction passage 16 toward the insulating film 10 to the outside. And a beam emission opening 18 for permitting the light emission. The through-hole 108 extends in a direction orthogonal to the beam extraction passage 16, and the housing 106 has an annular inner wall surface 110 for defining the through-hole 108.
[0061]
The beam emission opening 18 is formed in the inner wall surface 110 and communicates with the through hole 108. Therefore, the beam extraction passage 16 communicates with the through hole 108 through the beam emission opening 18. The upper part of the inner wall surface 110 in which the beam emission opening 18 is formed constitutes the end surface of the housing. The through-hole 108 has one opening (right side in the drawing) 112 provided at one end thereof and communicating with the outside of the housing, and the other opening provided at the other end thereof and communicating with the outside of the housing ( (Left side in the figure) 114.
[0062]
The vacuum chamber 14 has a first opening 17 that allows the passage of the electron beam 2 generated from the electron beam generator 4. The beam extraction passage 16 has a second opening 19 communicating with the first opening 17 of the vacuum chamber 14 and allowing passage of an electron beam. The second opening 19 communicates with the beam emission opening 18 via the beam extraction passage 16.
[0063]
The housing 106 further includes a diaphragm 28 having one end communicating with the first opening 17 of the vacuum chamber 14 and the other end communicating with the second opening 19 of the beam extraction passage 16. In order to allow the rectangular electron beam 2 to pass therethrough, the first opening 17, the aperture 28, the beam extraction passage 16, and the beam emission opening 18 also have a cross section that is the same as the shape of the electron beam. Has a corresponding rectangular shape
The electron beam device also includes a holding device 30 that holds the wafer 8 movably arranged through the through hole 108 of the housing, one opening 112 and the other opening 114. The holding device 30 is longer than the length of the through hole 108 in the longitudinal direction, and extends beyond the one opening 112 and the other opening 114, respectively. The holding device 30 includes a concave portion 33 for receiving the wafer such that the insulating film 10 applied to the wafer surface and the surface of the holding device 30 are substantially flush with each other when the wafer 8 is held. . The holding device 30 includes a well-known chuck mechanism (not shown) that can hold a wafer by vacuum force or electrostatic force. The holding device 30 can be provided with a heater for raising the temperature of the insulating film.
[0064]
The electron beam device further includes a driving device 132 as a driving unit that can move the holding device 30 while maintaining the gap T ′ between the inner wall surface 110 of the housing and the holding device 30 substantially constant. ing. The driving device 132 can reciprocate the holding device 30 in the horizontal direction in the drawing, and also keeps the gap T ′ between the inner wall surface 110 of the housing and the holding device 30 almost constant, thereby holding the holding device 30. It can be moved with respect to the inner wall surface 110 of the housing. In the third embodiment, the gap T ′ is formed in an annular shape between the annular inner wall surface 110 and the holding device 30, that is, around the holding device 30. The housing 106, the holding device 30, and the driving device 132 are arranged in a space in which, for example, air exists as a predetermined gas.
[0065]
The electron beam device further includes a gap adjusting device 120 as a gap adjusting means disposed between the lower end 116 of the housing and the electron beam device mounting surface 118. The gap adjusting device 120 moves the housing 106 in the direction of the beam extraction passage, that is, in the vertical direction in the drawing, to thereby provide a gap T ′ between the inner wall surface 110 of the housing defining the through hole 108 and the holding device 30. Can be adjusted.
[0066]
The electron beam device further includes a control device 34 for controlling the electron beam generating device 4, the driving device 132, the gap adjusting device 120, and the like. The controller 34 can change and control the accelerating voltage and beam current of the electron beam, the number of reciprocations of the holding device by the driving device, and the moving speed according to the type and thickness of the insulating film applied to the wafer. Further, the gap T ′ can be adjusted to a desired value by controlling the gap adjusting device 120 by the control device 34.
[0067]
On the inner wall surface 110 of the housing 106, a gap sensor 36 for detecting a gap T 'between the inner wall surface 110 of the housing and the holding device 30 is provided. The signal from the gap sensor 36 is transmitted to the control device 34. The control device 34 that has received the signal related to the gap T ′ from the gap sensor 36 gives a command to the gap adjusting device 120 to move the housing 106 up and down when the gap T ′ is different from the predetermined dimension, The gap T 'is adjusted to have a desired size.
[0068]
The housing 106 is provided with a vacuum gauge 38 for measuring the pressure in the vacuum chamber. A signal from the vacuum gauge 38 is also transmitted to the control device 34. The control device 34 that has received the signal from the vacuum gauge 38 controls the gap adjusting device 120 based on the pressure in the vacuum chamber, thereby controlling the gap T ′.
[0069]
The electron beam device further exhausts air entering the gap T ′ between the inner wall surface 110 of the housing provided with the beam emission opening 18 and the holding device 30 to the outside of the housing via the housing 106. A differential exhaust device 140 is provided.
[0070]
The differential exhaust device 140 includes a first annular groove 122 formed on one opening 112 side of the inner wall surface 110 so as to surround the periphery of the holding device 30, and an inner wall surface surrounding the periphery of the holding device 30. There is provided a second annular groove 124 formed on the other opening 114 side of 110, and a vacuum pump device 44 communicating with the beam extraction passage 16 and the first and second annular grooves 122, 124. . The first annular groove 122 and the second annular groove 124 are arranged so as to be parallel to each other. The vacuum pump device 44 includes a first vacuum pump 46 for evacuating the beam extraction passage 16 and a second vacuum pump 48 for evacuating the first and second annular grooves 122 and 124. The first annular groove 122 is communicated with the second annular groove 124 through a passage (not shown) formed in the housing 106, and is evacuated by the second vacuum pump 48.
[0071]
A third annular groove 134 is also formed in the inner wall surface 110 of the housing that defines the through hole 108. The third annular groove 134 is arranged closer to the one opening 112 side than the first annular groove 122 so as to be parallel to the first annular groove 122. The third annular groove 134 is formed so as to surround the periphery of the holding device 30.
[0072]
A fourth annular groove 136 is also formed in the inner wall surface 110 of the housing that defines the through hole 108. The fourth annular groove 136 is arranged closer to the other opening 114 side than the second annular groove 124 so as to be parallel to the second annular groove 124. The fourth annular groove 136 is also formed so as to surround the periphery of the holding device 30. The fourth annular groove 136 communicates with the third annular groove 134 via a passage (not shown) formed in the housing 106. The first annular groove 122 and the third annular groove 134 are provided on one protruding portion 14a side, and the second annular groove 124 and the fourth annular groove 136 are provided on the other protruding portion 14b side. Have been.
[0073]
The electron beam apparatus also has an inert gas supply pump 138 as an inert gas supply unit for supplying an inert gas to the third annular groove 134 and the fourth annular groove 136, and an inert gas storing the inert gas. An active gas storage tank 141 is provided. The inert gas supply pump 138 communicates with the third annular groove 134, and further communicates with the fourth annular groove 136 via the third annular groove 134 and the above-described passage (not shown). In this manner, the inert gas supply pump 138 receives the command from the control device 34 and pressurizes the inert gas from the inert gas storage tank 141 into the third annular groove 134 and the fourth annular groove 136. I do.
With this configuration, the entire annular gap T ′ is formed near the inner wall surfaces (ie, the third annular groove 134 and the fourth annular groove 136) near the opening portions 112 and 114 of the housing 106 toward the holding device 30. An inert gas is supplied, and a gas curtain of the inert gas is formed over the entire gap T ′, so that entry of air into the housing is reduced. This makes it possible to make the vicinity of the beam emission opening 18 into an inert gas atmosphere, thereby reducing the adverse effect of oxygen in the atmosphere on the insulating film, such as oxidation.
[0074]
Also in the third embodiment, the vacuum pump device 44 can be constituted by a multi-stage vacuum pump having a plurality of evacuation stages shown in FIGS. 3 and 4, and further, the beam extraction passage is evacuated. It can also be composed of a first vacuum pump, a second vacuum pump for evacuating the first annular groove, and a third vacuum pump for evacuating the second annular groove. However, in this case, the first annular groove and the second annular groove are not connected. Further, in the third embodiment, a normally open valve that closes the beam extraction passage 16 at the time of a power failure or a pump failure can be provided.
[0075]
Next, a charged particle beam system according to a fourth embodiment of the present invention will be described with reference to FIG. The same components as those in the above embodiments are denoted by the same reference numerals, and detailed description thereof will be omitted.
[0076]
The electron beam system as the charged particle beam system according to the fourth embodiment is for irradiating a plurality of insulating films sequentially with an electron beam to cure each of the plurality of insulating films, and includes three electron beam devices arranged in a ring. That is, the apparatus includes first, second, and third electron beam devices 200, 202, and 204. The first, second, and third electron beam devices 200, 202, and 204 are provided in a fixed state. Of course, three or more electron beam devices may be arranged in a ring.
[0077]
Each of the electron beam devices 200, 202, and 204 can be configured by an arbitrary combination of the electron beam devices described in the first and second embodiments. For example, all three electron beam devices 200, 202, and 204 may be the electron beam devices described in the first embodiment.
[0078]
For example, when all three are the electron beam devices described in the first embodiment, each of the electron beam devices is an electron beam generator for generating an electron beam, and a vacuum chamber for accommodating the electron beam generator. A beam extraction passage for allowing the passage of an electron beam generated from the electron beam generator, and a beam emission opening for allowing the electron beam passing through the beam extraction passage to be emitted toward the insulating film 10 to the outside. And a housing 6 having:
[0079]
The electron beam system is capable of processing three wafers, that is, first, second, and third wafers 206, 208, and 210 in accordance with the number of electron beam apparatuses. It has three holding devices (not shown) for holding. Each holding device has, for example, the same configuration as that shown in the first embodiment, and is similarly arranged on the beam emission opening side of the housing so as to be separated from the beam emission opening. ing.
[0080]
The electron beam system also includes a driving device 300 that synchronizes each holding device and moves the holding device relative to each electron beam device. Each holding device is mounted on the driving device 300 in a fixed state. The driving device 300 is configured by a flat and circular ring-shaped belt conveyor, rotates in response to a command from the control device 211, and simultaneously moves three wafers in the circumferential direction. Therefore, when the first wafer 206 is being processed by the first electron beam device 200, the second wafer 208 is being processed by the second electron beam device 202, and the third wafer 210 is being processed by the third electron beam device 202. The electron beam device 204 can receive processing.
[0081]
The electron beam system is arranged in a space where air exists, and each of the electron beam devices 200, 202, and 204 includes a differential exhaust device. The differential exhaust device exhausts air that enters through a gap between an end surface of the housing provided with the beam emission opening and the holding device or the driving device to the outside of the housing via the housing 6.
[0082]
The electron beam generators provided in the first, second, and third electron beam devices can generate electron beams having different acceleration voltages and beam currents. The wafer 206 is subjected to processing by an electron beam having a low level of energy in the first electron beam device 200 and then processed by an electron beam having a medium level of energy in the second electron beam device 202. Finally, the third electron beam device 204 can be processed by an electron beam having a high level of energy. As described above, when the three electron beam apparatuses irradiate the insulating film with electron beams having different acceleration voltages and beam currents, an insulating film having a desired hardness can be efficiently produced.
[0083]
An attachment / detachment unit 400 for attaching / detaching a wafer is provided at a substantially intermediate position between the first electron beam device 200 and the third electron beam device 204. That is, the wafers that have been processed by the three electron beam devices are sequentially removed from the holding device by the attaching / detaching unit 400. Then, in place of the removed processed wafer, a new unprocessed wafer is attached to the holding device at the attaching / detaching portion.
[0084]
【The invention's effect】
As described above, according to the present invention, when the charged particle beam device is arranged in the atmosphere, most of the air that has entered the gap between the end face of the housing and the holding means is introduced into the atmosphere by the differential exhaust device. Exhausted. Thereby, the beam emission opening and the periphery thereof are maintained at a predetermined degree of vacuum, and the charged particle beam emitted from the beam emission opening toward the processing object is irradiated on the processing object with almost no attenuation. can do. Further, according to the present invention, since it is no longer necessary to use a thin film which has been conventionally required for a charged particle beam generator, there is no need to replace a small tube due to deterioration of the thin film, and it is also possible to reduce running costs. it can.
[0085]
In addition, since the holding means is moved relatively to the end surface of the housing, the surface of the processing object is uniformly irradiated by sequentially irradiating the processing object with the charged particle beam from one end to the other end. It becomes possible to do. For example, even when an insulating film is employed as a processing target, the insulating film can be uniformly cured in its plane and in its thickness direction.
[0086]
Further, by providing the differential exhaust device, the holding means can be placed outside the vacuum chamber, whereby the size of the vacuum chamber can be reduced. Further, by fixing the vacuum chamber and moving the holding means, the vacuum chamber can be simplified.
[0087]
In addition, when the holding device is caused to reciprocate with respect to the charged particle beam, only by controlling the beam current generated from the charged particle beam generator and the moving speed of the holding device, the dose amount, that is, The irradiation dose can be controlled. Thereby, controllability of the dose amount of the charged particle beam can be improved. Further, by changing (controlling) the acceleration voltage of the charged particle beam when moving the holding means, it is possible to control the reforming of the processing object in the depth direction.
[Brief description of the drawings]
FIG. 1 is a schematic partial cross-sectional view of an electron beam processing apparatus according to a first embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view taken along line II-II of FIG.
FIG. 3 is a schematic side view showing another embodiment of the vacuum pump device.
FIG. 4 is a schematic cross-sectional view taken along line III-III of FIG.
FIG. 5 is a schematic partial cross-sectional view of an electron beam device according to a second embodiment of the present invention.
FIG. 6 is a schematic partial cross-sectional view of an electron beam device according to a third embodiment of the present invention.
FIG. 7 is a perspective view of the housing shown in FIG. 6;
FIG. 8 is a schematic diagram of an electron beam device according to a fourth embodiment of the present invention.
[Explanation of symbols]
2 electron beam 4 electron beam generator
6 Housing 8 Wafer
10 Insulating film 12 End face
14 Vacuum chamber 16 Beam extraction passage
17 first opening 18 beam emitting opening
19 second opening 20 high vacuum pump
22 cathode 24 anode
26 lens 28 aperture
30 holding device 32 driving device
33 recess 34 control device
36 Gap sensor 38 Vacuum gauge
40 differential exhaust device 42 annular groove
44 vacuum pump device 46 first vacuum pump
48 second vacuum pump 50 first exhaust passage
52 Second exhaust passage 53 Third exhaust passage
55 Booster pump 56 Main pump
57 Shaft 58 Booster pump inlet
59 bearing 60 rotor
62 Electric motor 64 Booster pump outlet
66 Connection passage 68 Main pump inlet
70 rotor 72 rotor
74 rotor 76 rotor
78 rotor 80 electric motor
82 Main pump outlet
74a drive rotor 74b driven rotor
83 shaft
84 gear 85 bearing
86 normally open valve
2 'second electron beam 4' second electron beam generator
14 'second vacuum chamber 16' second beam extraction passage
18 'second beam emitting aperture
106 Housing
14a Projection 14b Projection
108 through hole 110 annular inner wall surface
112 One opening 114 The other opening
116 Lower end of housing 118 Mounting surface of electron beam device
120 clearance adjusting device 122 first annular groove
124 second annular groove 132 drive
134 third annular groove 136 fourth annular groove
138 Inert gas supply pump 140 Differential pump
141 Inert gas storage tank 200 First electron beam device
202 Second electron beam device 204 Third electron beam device
206 first wafer 208 second wafer
210 Third wafer 211 Controller
300 drive device 400 detachable part

Claims (47)

A charged particle beam apparatus that performs a predetermined process by irradiating a charged particle beam to a processing target,
A charged particle beam generator for generating a charged particle beam,
A vacuum chamber for accommodating the charged particle beam generator, a beam extraction passage allowing passage of the charged particle beam generated from the charged particle beam generator, and the charged particle beam passing through the beam extraction passage A housing having a beam emission opening that allows emission to the outside toward the processing object,
Holding means for holding the object to be processed, which is arranged on the beam emission opening side of the housing and is spaced apart from the beam emission opening,
Drive means for moving the holding means relative to the housing,
The housing, the holding means and the driving means are arranged in a space where a predetermined gas exists,
A differential exhaust device that exhausts the gas that enters the gap between the end face of the housing provided with the beam emission opening and the holding means to the outside of the housing through the housing. A charged particle beam device. The charged particle beam device according to claim 1,
The vacuum chamber has a first opening that allows passage of the charged particle beam generated from the charged particle beam generator,
The beam extraction passage has a second opening communicating with a first opening of the vacuum chamber and allowing passage of the charged particle beam, and the second opening includes the beam extraction passage. A charged particle beam device, wherein the charged particle beam device communicates with the beam emission opening through a hole. The charged particle beam device according to claim 1 or 2,
The differential evacuation device includes at least a single annular groove provided on an end surface of the housing around the beam emission opening;
A charged particle beam device, comprising: a vacuum pump device that communicates with the beam extraction passage and the annular groove to evacuate the inside of the beam extraction passage and the annular groove. The charged particle beam device according to any one of claims 1 to 3,
The housing further includes a throttle portion having one end communicating with the first opening of the vacuum chamber and the other end communicating with the second opening of the beam extraction passage. Particle beam device. The charged particle beam device according to any one of claims 1 to 4,
The driving means can reciprocate the holding means, hold the gap between the end face of the housing and the holding means substantially constant, and move the holding means relative to the end face of the housing. A charged particle beam apparatus characterized in that it can be moved in a moving manner. The charged particle beam device according to any one of claims 1 to 5,
The charged particle beam device further includes a control device for changing an acceleration voltage and a beam current of the charged particle beam. The charged particle beam device according to claim 6,
Further, a measuring means for measuring the pressure in the vacuum chamber, and a detecting means for detecting the gap,
The driving means can adjust the gap between the end face of the housing and the holding means by moving the holding means,
The charged particle beam apparatus, wherein the control device controls the driving unit based on a pressure in the vacuum chamber from the measuring unit and a result from the detecting unit, thereby controlling the gap. . The charged particle beam device according to any one of claims 1 to 7,
The charged particle beam apparatus, wherein the holding unit includes a chuck mechanism capable of adsorbing the object to be processed by a vacuum force or an electrostatic force. The charged particle beam device according to any one of claims 1 to 8,
The charged particle beam apparatus, wherein the holding means includes a temperature raising means for raising the temperature of the object to be processed. The charged particle beam device according to any one of claims 1 to 9,
The holding means includes a concave portion for receiving the processing object so that the surface of the processing object and the holding means are substantially flush with each other when the holding means holds the processing object. A charged particle beam device. The charged particle beam device according to any one of claims 1 to 10,
Furthermore, a housing that covers the housing, the holding unit, and the driving unit is provided, the housing forms a space in which the gas exists, the gas is made of an inert gas, and the housing and the holding unit are formed. A charged particle beam device, wherein the inert gas and the driving means are covered with the inert gas. The charged particle beam device according to any one of claims 1 to 11,
The charged particle beam apparatus further includes a high vacuum pump for evacuating the vacuum chamber to a high vacuum state. The charged particle beam device according to any one of claims 3 to 12,
The charged particle beam device, wherein the vacuum pump device includes a first vacuum pump for evacuating the beam extraction passage, and a second vacuum pump for evacuating the annular groove. The charged particle beam device according to any one of claims 3 to 12,
The vacuum pump device includes a multi-stage vacuum pump having a plurality of exhaust stages,
One exhaust stage of the plurality of exhaust stages communicates with the beam extraction passage,
A charged particle beam device, wherein the other exhaust stage communicates with the annular groove. The charged particle beam device according to any one of claims 1 to 14,
The charged particle beam apparatus further includes a normally open valve that closes the beam extraction passage when a power failure occurs or the vacuum pump fails. The charged particle beam device according to any one of claims 1 to 15,
The charged particle beam generator can generate a rectangular charged particle beam, and the beam extraction passage and the diaphragm are rectangular in shape corresponding to the rectangular charged particle beam. Charged particle beam equipment. The charged particle beam device according to any one of claims 1 to 15, wherein the charged particle beam generator can oscillate a point-like charged particle beam in a direction perpendicular to a traveling direction of a processing target, The charged particle beam device according to claim 1, wherein the beam extraction passage and the converging section have a rectangular shape corresponding to the amplitude of the charged particle beam. The charged particle beam device according to any one of claims 1 to 17,
The object to be processed is selected from the group consisting of a resin, a compound, a resist, an interlayer insulating film, and a medical device. The charged particle beam device according to any one of claims 3 to 18, further comprising another annular groove on an outer peripheral side of the annular groove provided on an end surface of the housing, wherein the charged particle beam generator includes A charged particle beam apparatus comprising an inert gas supply unit for supplying an inert gas to an outer peripheral annular groove. The charged particle beam device according to any one of claims 1 to 19,
A second charged particle beam generator for generating a second charged particle beam;
The housing further includes a second vacuum chamber for accommodating the second charged particle beam generator, and a second vacuum chamber that allows passage of the charged particle beam generated from the second charged particle beam generator. A beam extraction passage, and a second beam emission opening that allows the second charged particle beam that has passed through the second beam extraction passage to be emitted to the outside toward the object to be processed. A charged particle beam device, comprising: The charged particle beam device according to claim 3,
A second charged particle beam generator for generating a second charged particle beam;
The housing further includes a second vacuum chamber for accommodating the second charged particle beam generator, and a second vacuum chamber that allows passage of the charged particle beam generated from the second charged particle beam generator. A beam extraction passage, and a second beam emission opening that allows the second charged particle beam that has passed through the second beam extraction passage to be emitted to the outside toward the object to be processed. Have
The annular groove is provided on an end surface of the housing around the beam emission opening and the second beam emission opening,
The vacuum pump device communicates with the beam extraction passage, the second beam extraction passage, and the annular groove, and within the beam extraction passage, the second beam extraction passage, and the annular groove. A charged particle beam device, comprising: evacuating. The charged particle beam device according to claim 12,
A second charged particle beam generator for generating a second charged particle beam;
The housing further includes a second vacuum chamber for accommodating the second charged particle beam generator, and a second vacuum chamber that allows passage of the charged particle beam generated from the second charged particle beam generator. A beam extraction passage, and a second beam emission opening that allows the second charged particle beam that has passed through the second beam extraction passage to be emitted to the outside toward the object to be processed. Have
A charged particle beam apparatus, wherein the high vacuum pump is evacuated so that the second vacuum chamber is also in a high vacuum state. The charged particle beam device according to claim 13,
A second charged particle beam generator for generating a second charged particle beam;
The housing further includes a second vacuum chamber for accommodating the second charged particle beam generator, and a second vacuum chamber that allows passage of the charged particle beam generated from the second charged particle beam generator. A beam extraction passage, and a second beam emission opening that allows the second charged particle beam that has passed through the second beam extraction passage to be emitted to the outside toward the object to be processed. Have
A charged particle beam apparatus, wherein the first vacuum pump evacuates the second beam extraction passage. The charged particle beam device according to any one of claims 20 to 23,
A charged particle beam apparatus, wherein an acceleration voltage or a beam current of the first charged particle beam is different from an acceleration voltage or a beam current of the second charged particle beam. A charged particle beam apparatus that performs a predetermined process by irradiating a charged particle beam to a processing target,
A charged particle beam generator for generating a charged particle beam,
A housing having a vacuum chamber for housing the charged particle beam device,
The housing further comprises:
A beam extraction passage allowing passage of the charged particle beam generated from the charged particle beam generator,
A beam emission opening that allows the charged particle beam that has passed through the beam extraction passage to be emitted to the outside toward the processing target,
An inner wall surface that defines a through hole extending in a direction orthogonal to the beam extraction passage, and the beam emission opening is provided on the inner wall surface and communicates with the through hole.
The through-hole has one opening provided at one end thereof and communicating with the outside of the housing, and the other opening provided at the other end thereof and communicating with the outside of the housing. Yes,
The charged particle beam device also includes:
Holding means for holding the object to be processed, movably disposed through the through-hole of the housing, one opening and the other opening,
Driving means for holding the gap between the inner wall surface of the housing and the holding means substantially constant, and moving the holding means,
The housing, the holding means and the driving means are arranged in a space where a predetermined gas exists,
A differential exhaust device that exhausts the gas entering the gap between the inner wall surface of the housing provided with the beam emission opening and the holding unit to the outside of the housing via the housing. A charged particle beam device characterized by the above-mentioned. The charged particle beam device according to claim 25,
The vacuum chamber has a first opening that allows passage of the charged particle beam generated from the charged particle beam generator,
The beam extraction passage has a second opening communicating with a first opening of the vacuum chamber and allowing passage of the charged particle beam, and the second opening includes the beam extraction passage. A charged particle beam device, wherein the charged particle beam device communicates with the beam emission opening through a hole. The charged particle beam device according to claim 25 or 26,
The differential exhaust device,
A first annular groove formed on the one opening side of the inner wall surface so as to surround the holding means;
A second annular groove formed on the other opening side of the inner wall surface so as to surround the holding means;
A charged particle beam device, comprising: a vacuum pump device communicating with the beam extraction passage and the first and second annular grooves. The charged particle beam device according to any one of claims 25 to 27,
The housing further includes a throttle portion having one end communicating with the first opening of the vacuum chamber and the other end communicating with the second opening of the beam extraction passage. Particle beam device. The charged particle beam device according to any one of claims 25 to 28,
The driving means is capable of reciprocating the holding means, and holding the gap between the inner wall surface of the housing and the holding means substantially constant, and moving the holding means relative to the inner wall surface of the housing. A charged particle beam device, which can be relatively moved. The charged particle beam device according to any one of claims 25 to 29,
The charged particle beam device further includes a control device for changing an acceleration voltage and a beam current of the charged particle beam. The charged particle beam device according to any one of claims 25 to 30,
Further, a gap adjusting means for moving the housing along the direction of the beam extraction passage to adjust a gap between an inner wall surface of the housing defining the through hole and the holding means is provided. Charged particle beam equipment. The charged particle beam device according to claim 31,
Further, a measuring means for measuring the pressure in the vacuum chamber, and a detecting means for detecting the gap,
The controller controls the gap adjusting unit based on the pressure in the vacuum chamber from the measuring unit and the result from the detecting unit, thereby controlling the gap. apparatus. The charged particle beam device according to any one of claims 25 to 32,
The charged particle beam apparatus, wherein the holding unit includes a chuck mechanism capable of adsorbing the object to be processed by a vacuum force or an electrostatic force. The charged particle beam device according to any one of claims 25 to 33,
The charged particle beam apparatus, wherein the holding means includes a temperature raising means for raising the temperature of the object to be processed. The charged particle beam device according to any one of claims 25 to 34,
The holding means includes a concave portion for receiving the processing object so that the surface of the processing object and the holding means are substantially flush with each other when the holding means holds the processing object. A charged particle beam device. The charged particle beam device according to any one of claims 25 to 35,
Furthermore, a housing that covers the housing, the holding unit, and the driving unit is provided, the housing forms a space in which the gas exists, the gas is made of an inert gas, and the housing and the holding unit are formed. A charged particle beam device, wherein the inert gas and the driving means are covered with the inert gas. The charged particle beam device according to any one of claims 25 to 36,
The charged particle beam apparatus further includes a high vacuum pump for evacuating the vacuum chamber to a high vacuum state. The charged particle beam device according to any one of claims 27 to 37,
The vacuum pump device includes a first vacuum pump that evacuates the beam extraction passage, and a second vacuum pump that evacuates the first and second annular grooves. Particle beam device. 38. The charged particle beam device according to claim 27, wherein the vacuum pump device evacuates the beam extraction passage and evacuates the first annular groove. A charged particle beam device comprising: a second vacuum pump; and a third vacuum pump that evacuates the second annular groove. The charged particle beam device according to any one of claims 27 to 37,
The vacuum pump device includes a multi-stage vacuum pump having a plurality of exhaust stages,
One exhaust stage of the plurality of exhaust stages communicates with the beam extraction passage,
A charged particle beam device, wherein the other exhaust stage communicates with the first and second annular grooves. The charged particle beam device according to any one of claims 25 to 40,
The charged particle beam apparatus further includes a normally open valve that closes the beam extraction passage when a power failure occurs or the vacuum pump fails. The charged particle beam device according to any one of claims 25 to 41,
The charged particle beam generator can generate a rectangular charged particle beam, and the beam extraction passage and the diaphragm are rectangular in shape corresponding to the rectangular charged particle beam. Charged particle beam equipment. The charged particle beam device according to any one of claims 25 to 41, wherein the charged particle beam generator can oscillate a point-like charged particle beam in a direction perpendicular to a traveling direction of an object to be processed. A charged particle beam apparatus, wherein the beam extraction passage and the converging section have a rectangular shape corresponding to the amplitude of the charged particle beam. The charged particle beam device according to any one of claims 25 to 43,
The object to be processed is selected from the group consisting of a resin, a compound, a resist, an interlayer insulating film, and a medical device. The charged particle beam device according to any one of claims 25 to 44,
An inner wall surface of the housing defining the through hole, a third annular groove formed on the inner wall surface to surround the holding means on the one opening side of the first annular groove; A fourth annular groove formed on the inner wall surface so as to surround the holding means on the other opening side of the second annular groove,
The charged particle beam device further comprises an inert gas supply unit that supplies an inert gas to the third annular groove and the fourth annular groove. A charged particle beam system that performs predetermined processing by sequentially irradiating a plurality of processing objects with a charged particle beam,
The charged particle beam system includes a plurality of charged particle beam devices arranged in an annular shape,
Each of the plurality of charged particle beam devices,
A charged particle beam generator for generating a charged particle beam,
A vacuum chamber for accommodating the charged particle beam generator, a beam extraction passage allowing passage of the charged particle beam generated from the charged particle beam generator, and the charged particle beam passing through the beam extraction passage And a housing having a beam emission opening that allows emission to the outside toward the object to be processed.
The charged particle beam system further comprises:
A plurality of holding means for holding the plurality of objects to be processed, arranged on the beam emission opening side of the housing, spaced apart from the beam emission opening,
Driving means for moving the plurality of holding means in synchronization with each of the charged particle beam devices,
Each of the charged particle beam devices, each of the holding units, and the driving unit are arranged in a space where a predetermined gas exists,
Each of the plurality of charged particle beam devices is configured such that the gas that enters a gap between the end surface of the housing provided with the beam emission opening and the holding unit is disposed outside the housing through the housing. A charged particle beam system comprising a differential exhaust device for exhausting air to a charged particle beam. 47. The charged particle beam system according to claim 46, wherein the charged particle beam generators of the plurality of charged particle beam devices have different acceleration voltages and beam currents of the charged particle beams. .

Images