JP2004245905A - Mask fabricating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem associated with a mask fabricating device, in which two-dimensionally arrayed micro mirrors are damaged with ultraviolet laser light. <P>SOLUTION: In the mask fabricating device 100, aluminum with (111) orientation is used for mirror surfaces in the two-dimensionally arrayed micro mirrors 106. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an apparatus for producing a mask used in an exposure process at the time of manufacturing a semiconductor integrated circuit. The mask may be a photomask for photolithography using ultraviolet light or X-rays as an exposure light source, or may be a 1: 1 mask for electron beams.
[0002]
[Prior art]
In general, a mask (also referred to as a reticle) used in the manufacture of a semiconductor integrated circuit is formed by exposing light to a pattern corresponding to a target circuit pattern on a surface of a quartz plate or the like serving as a substrate of the mask. It is necessary to attach a chrome film or the like that shields the light. The chromium film or the like is formed by pattern exposure, and a general method of drawing and exposing in a pattern form is electron beam drawing using an electron beam. In this method, a narrowly focused electron beam is drawn along a pattern like direct electron beam drawing, and the apparatus is usually called an EB drawing apparatus.
[0003]
In a general exposure apparatus using ultraviolet light, a mask having a size four to five times the size of a circuit pattern of a semiconductor chip to be manufactured is used. There is also an exposure method using a mask (hereinafter, referred to as an equal-size mask). This is called 1: 1 exposure, and includes, for example, LEEPL (an acronym for Low Energy E-Beam Proximity Lithography) and 1: 1 X-ray exposure. This is an exposure technique in which an equal-magnification mask is arranged directly above a wafer and exposed from above the mask by irradiating an electron beam with LEEPL or X-ray with equal-magnification X-ray exposure.
[0004]
On the other hand, as a mask manufacturing apparatus, a pattern is drawn using an ultraviolet laser beam (hereinafter, abbreviated as an ultraviolet laser beam) instead of an electron beam (that is, a mask substrate coated with a resist is exposed in a pattern). A method based on such a method (sometimes called a laser beam drawing apparatus) has also been commercialized. This apparatus has two types of constitutions, one of which is to pattern-draw one or a plurality of divided ultraviolet laser beams on a mask substrate. Another configuration is to use a reflecting mirror display element (a device called a digital micromirror or the like) in which a large number of minute mirrors are arranged in a two-dimensional array, irradiate this with ultraviolet laser light, and reflect the reflected light. A pattern is drawn on a mask substrate by controlling the pattern. It is known that this laser beam drawing apparatus has a feature that the processing speed is high because a part of the circuit patterns can be exposed collectively. This is described in, for example, Electronic Journal, July 2001, pp. 140-142.
[0005]
By the way, in the laser beam drawing apparatus using the two-dimensional array micro mirror, after exposing a partial pattern that can be exposed collectively, when exposing the adjacent partial pattern, it is necessary to move the mask substrate, It is difficult to increase the movement accuracy, and it is not possible to cope with miniaturization. In particular, when an attempt is made to draw a 1: 1 mask, the precision of the movement of the mask substrate is 0.007 μm, which is 1/10 or less of the minimum line width, and it is almost impossible to instantaneously move the stage with this precision. Therefore, there is a problem that there is no mask drawing apparatus capable of drawing at a high speed with respect to the same-size mask.
[0006]
On the other hand, in the mask making method and the mask making apparatus proposed in Japanese Patent Application No. 2003-18960, in order to solve the above-mentioned conventional problems, in particular, the same-size mask can be formed with high accuracy in a short time. It is intended to provide a mask making method and a mask making apparatus which can be manufactured. As the device configuration, a two-dimensional array of light control elements and a reduction projection optical device are used, and an enlarged mask pattern formed and projected by the two-dimensional array of light control elements is reduced by the reduction projection optical device. In this method, pattern exposure was performed while reducing projection on a mask substrate.
[0007]
[Non-patent document 1]
Electronic Journal, July 2001, pp. 140-142.
[0008]
[Patent Document 1]
Japanese Patent Application No. 2003-18960
[0009]
[Problems to be solved by the invention]
However, it has been found that the mask producing apparatus has the following problems in the two-dimensionally arranged light control elements constituting the mask producing apparatus. That is, when a two-dimensionally arrayed micromirror is used as a two-dimensionally arrayed light control element, the mirror surface may be gradually damaged by an ultraviolet laser beam irradiated on the mirror.
[0010]
In general, magnesium fluoride may be coated as a protective film of the aluminum mirror. However, in the mask making apparatus of the present invention, if the wavelength of the laser beam is shortened in order to increase the resolution in transferring the pattern to the mask substrate, the reflectance of the aluminum mirror coated with magnesium fluoride may decrease sharply. It becomes a problem. For example, at a wavelength of 200 nm, the reflectance of aluminum alone is about 87%, whereas the reflectance of an aluminum mirror coated with magnesium fluoride may be reduced to 70% or less. Therefore, there is a problem in that a two-dimensional arrayed micromirror made of an aluminum mirror having durability against ultraviolet laser light and having high reflectance cannot be used.
[0011]
Furthermore, when a fluorine laser is used as a laser for generating the laser light in the ultraviolet region, a monochromatic lens made of only calcium fluoride is used as a reduction projection optical device constituting the mask making device. The reason for this is that calcium fluoride is limited as a stable optical material having a high transmittance of 90% or more per cm in a vacuum ultraviolet region having a wavelength of 157 nm and having no water absorption or birefringence. . This configuration is widely known as an optical system of a semiconductor chip exposure apparatus (hereinafter, referred to as an F2 exposure machine) using a fluorine laser (hereinafter, referred to as an F2 laser). However, when a monochromatic lens is used, it is necessary to narrow the band of the F2 laser to a wavelength width of about 0.1 pm or less in order to suppress chromatic aberration. However, it is relatively difficult to narrow the band of the F2 laser, and it is expensive. It becomes necessary to use a narrow band narrowing element or to provide a wavelength stabilizing mechanism, and there has been a problem that the F2 laser becomes complicated and expensive.
[0012]
Furthermore, in a method and an apparatus using a self-luminous element in a two-dimensionally arranged light control element, if a commonly used organic EL element or a plasma display (hereinafter, referred to as a PDP) is used, FIG. As can be seen from their emission spectra shown in FIG. 10 and FIG. 13, even for a material that emits blue light, which is the shortest wavelength among the three primary colors of light, there is a problem that components having a wavelength of 400 nm or less are hardly contained. . Originally, it is desirable that the blue component, which is the shortest wavelength in these self-luminous elements, emit light at a wavelength of 460 to 470 nm, which is perceived as blue by human eyes. And the light intensity is almost lost. However, in order to draw a mask pattern by exposure to ultraviolet light as in the present invention, a resist is required. However, in an i-line resist optimized for an i-ray having a wavelength of 365 nm, when the wavelength becomes 450 nm or more, before and after exposure. Was difficult to use because the difference in transmittance of the sample was too small. It is difficult to use a mercury lamp that emits light at a wavelength of 365 nm for the mask making apparatus of the present invention using a two-dimensionally arrayed micromirror for the following reasons. Unlike a laser beam, light emitted from a mercury lamp is difficult to produce a parallel beam, and efficiently deforms into a narrow parallel beam with a width of 1 to 2 cm, which is the general size of a two-dimensional arrayed micromirror. This is because it is extremely difficult. Therefore, in order to use an i-line resist, the above-mentioned proposed mask making apparatus needs improvement.
[0013]
SUMMARY OF THE INVENTION It is an object of the present invention to provide a mask making apparatus having a two-dimensionally arrayed micromirror that hardly causes damage to ultraviolet laser light.
[0014]
It is another object of the present invention to provide a mask making apparatus which can simplify the structure of a fluorine laser when the fluorine laser is used as an exposure light source.
[0015]
Still another object of the present invention is to provide an apparatus for producing a mask using a self-luminous element that can use an existing exposure resist such as an i-line resist.
[0016]
Still another object of the present invention is to provide a mask producing apparatus having high resolution performance.
[0017]
[Means for Solving the Problems]
In order to achieve the above object, according to the present invention, the two-dimensional array of light control elements is not a two-dimensional array micro-mirror having a normal aluminum micro-mirror, but has a plane orientation substantially (111). A two-dimensional arrayed micromirror using oriented aluminum (hereinafter, referred to as “(111) oriented aluminum”) is used. According to this experiment, it has been found that the reflectance can be improved by several percent by using a two-dimensional array micromirror using (111) oriented aluminum. Therefore, by using this, the ultraviolet light absorbed by the aluminum mirror surface is reduced, the temperature rise of the aluminum is reduced, and as a result melting and evaporation are suppressed, and the mirror surface is damaged I knew nothing.
[0018]
Furthermore, it is preferable to provide a protective film of Al2O3 (aluminum oxide) on the surface so that the aluminum mirror maintains a high reflectance for a long period of time. According to this, since the Al2O3 film functions as a passivation film, the resistance to strong ultraviolet light is improved, and the aluminum surface is not oxidized by oxygen or moisture contained in the surrounding gas.
[0019]
Another feature of the present invention is that, in order to simplify the configuration of a fluorine gas laser (hereinafter, referred to as “F2 laser”), the first mask pattern projection device or the reduction projection optical device is made of calcium fluoride. And an achromatic lens formed by a combination of a lens made of quartz and a lens made of fluorine-doped quartz. According to this, as shown in FIG. 7, it is known that fluorine-doped quartz has a transmittance of about 80% per 5 mm in thickness even at a wavelength of 157 nm, unlike ordinary quartz. In other words, on the contrary, about 20% of the laser light is absorbed per 5 mm, and there is a possibility that the temperature rises and the refractive index fluctuates, so that it is difficult to use the lens for an F2 exposure machine. . However, it is sufficient that the output of the laser constituting the present invention is 1/100 or less of the laser output of the exposure light source for chip exposure. The reason is that, in the case of chip exposure, there is no mass productivity unless one chip is exposed in about 1 second, but in the case of mask drawing, it is only necessary to expose one sheet in tens of minutes to several hours. Therefore, in the present invention, the rate at which the lens made of fluorine-doped quartz absorbs laser light and rises in temperature can be reduced to 1/100 or less. be able to. Therefore, it is possible to use the achromatic lens. In addition, regarding fluorine-doped quartz, for example, Hosono, et al. : Applied Physics Letters, 74, 2755
(1999).
[0020]
Still another feature of the present invention is that an organic EL element having a center emission wavelength of 320 nm to 420 nm, such as an organic EL element containing polymethylphenylsilane that emits light at a wavelength of 353 nm, is used as a self-luminous element. In addition, not only the resolution is improved than when a normal organic EL having a wavelength of 450 nm is used, but a resist for i-ray having a wavelength of 365 nm can be used as it is as a resist applied on a mask substrate. That is, in this wavelength range, the i-line resist has a large difference in transmittance between the exposed portion and the unexposed portion, so that a pattern can be formed. Also, the i-line lens can be used as it is as the reduction projection optical device.
[0021]
According to another feature of the present invention, by using a PDP that does not contain a phosphor as a self-luminous element, vacuum ultraviolet light having a wavelength of 147 nm emitted by discharge of a Xe gas filled in the PDP is directly used for exposure. can do. As a result, not only the resolution is improved than when a normal PDP having a wavelength of 450 nm is used, but also there is no energy loss corresponding to the conversion efficiency from the emission of Xe gas to the phosphor compared to the case of using a normal PDP. In addition, the utilization efficiency of the energy input to the PDP is improved. The emission spectrum of the Xe gas discharge is shown in, for example, Proceedings of the international display works, 2000, p. 639. Further, as the resist in this case, a resist developed for an F2 element laser having a wavelength of 157 nm can be used.
[0022]
According to still another feature of the present invention, in order to improve the resolution of a mask pattern to be drawn, at the time of mask drawing, the lens between the lens closest to the mask substrate in the reduction projection optical device and the mask substrate is filled with water or the like. Filled with liquid. For example, one applied to an ArF exposure apparatus is called an ArF immersion optical system, and is known as a resolution improvement method of an ArF exposure apparatus that exposes a normal semiconductor chip. For example, SEICON Japan 2002, Technical programs for the semiconductor. equipment and materials industries, Nos. 3-15 to 3-16.
[0023]
According to this, in the case of ArF immersion, the wavelength of the laser light from the ArF excimer laser is 193 nm. However, since the refractive index between the lens and the mask substrate is about 1.45, the distance between these lenses is generally low. When compared with the case where the gas is filled with a typical gas such as nitrogen or air, the resolution is substantially equal to the case where the exposure is performed at a wavelength of 193 / 1.45 = 133 nm, and the resolution is improved. However, when applying an ArF immersion optical system to a normal ArF exposure apparatus, the wafer is mounted on the stage, and it is necessary to move the stage at high speed during exposure. There are many problems such as the necessity of a structure having a laser beam and a difficulty in configuring a stage moving at high speed and a laser-side distance system for instantaneously measuring the position and inclination of a wafer. .
[0024]
On the other hand, in the present invention, the drawing pattern only needs to be transferred to the fixed mask substrate, and there is no need to move the mask substrate. That is, since there is no need to place the mask substrate on the stage, it is technically easy to apply such an immersion optical system.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0026]
FIG. 1 is a configuration diagram of a mask making apparatus 100 as a first embodiment of the present invention. The mask making apparatus 100 has an enlarged pattern generation unit 101 provided with a two-dimensional array micromirror 106 capable of forming an arbitrary pattern, a reduced projection optical system 102, a stage 103 on which a mask substrate 109 is mounted, and a coating on the mask substrate 109. And an F2 laser oscillator 104 that generates a laser beam L11 having a wavelength of 157 nm that is exposed to the F2 resist. The laser light L11 extracted from the F2 laser oscillator 104 is reflected by the mirrors 105a and 105b, hits the mirror c in the enlarged pattern generation unit 101, and irradiates the two-dimensional array micro mirror 106. In the two-dimensional array micromirror 106, each micromirror is individually controlled by data from the mask pattern data output device 107, and the micromirror is controlled in a pattern of a part of a target mask drawing pattern. When the laser light incident on the mirror forming a part of the drawing pattern is reflected here, it travels like a lower laser light L12 in the figure, passes through the lenses 108a and 108b, and is shown as an enlarged pattern 110 in the figure. An image of the two-dimensional array micromirror 106 is projected on a part of the part thus formed. That is, the lens 108a and the lens 108b form a projection optical system.
[0027]
Since the pattern formed by the two-dimensional array micromirror 106 is a part of a target mask drawing pattern, the entire enlarged pattern generation unit 101 is required to form the entire enlarged pattern 110 in which the drawn pattern is enlarged. 1, the structure is capable of fine movement in the X direction and the Y direction.
[0028]
The enlarged pattern 110 is projected by the reduction projection optical system 102 onto a drawing area on the mask substrate 109 on the stage 103. Thus, the drawing pattern 111 obtained by reducing the enlarged pattern 110 is drawn on the mask substrate 109. As the enlarged pattern 110, an actual mask may be manufactured at that position, or a spatial pattern that is a pattern aggregate of ultraviolet light may be used. Regarding the configuration of the enlarged pattern generation unit 101, the configuration described in the above-mentioned document, US Pat. Nos. 5,870,176, 6,312,134, and 6,425,669 may be used.
[0029]
As shown in the present embodiment, in the mask making apparatus 100 of the present invention, the two-dimensional array micromirror 106 is used as the two-dimensional array light control element constituting the present invention. The enlarged pattern generation unit 101 itself moves while generating a part of the drawing pattern and changing the pattern as needed, whereby the same pattern as the drawing pattern is created and becomes the enlarged pattern 110. However, since the enlarged pattern 110 alone is larger than the actual mask, a drawing pattern having the actual mask size is generated by the reduced projection optical system 102.
[0030]
Although each mirror surface of the two-dimensionally arrayed micromirror 106 in this embodiment is made of aluminum, in the present invention, since aluminum has a (111) orientation, the reflectance is higher than that of normal aluminum. , About a few percent higher. The exact reason is unknown, but has been experimentally revealed. According to this, the rate at which the laser light L11 is absorbed by the mirror surface of the two-dimensionally arrayed micromirror 106 decreases, so that the temperature rise rate of the mirror surface decreases, and the melting and evaporation of the mirror surface is suppressed. . That is, damage is suppressed.
[0031]
An Al 2 O 3 film is provided on the mirror surface of the two-dimensionally arranged micro mirror 106. Since this causes passivation, the deterioration of the aluminum surface due to the irradiation of the laser beam L11 is suppressed, and the gas filled around the mirror surface of the two-dimensionally arrayed micromirror 106 contains oxygen or moisture to some extent. However, the mirror surface is not oxidized and the reflectance does not decrease. Of course, the space in contact with the mirror surface of the two-dimensional array micromirror 106 is preferably filled with a dry inert gas such as dry nitrogen or dry helium or hydrogen.
[0032]
(111) oriented aluminum is obtained by, for example, a method described in JP-A-2001-281426, in which the total area ratio of the (110) plane and the (111) plane on the plate surface is 30% or more. Can be used. In this case, it is reported that the UV reflectance at 350 nm becomes 95%. Alternatively, by using an Al target and applying a bias voltage to the substrate to draw in argon ions generated by plasma, the aluminum sputtering film on the substrate is irradiated and sputtered to form a substantially (111) oriented aluminum. A membrane can be made.
[0033]
The alumina film generates active oxygen by plasma containing krypton by a plasma processing apparatus, and a strong alumina passivation film can be formed by joining the aluminum surface with the radical oxygen. In particular, when an aluminum film is formed by sputtering as described above, the surface of the aluminum thin film is plasma-treated with active oxygen in an atmosphere of Kr / O2 = 97/3 without exposing the substrate to the atmosphere using a cluster tool from the sputtering apparatus. It is preferable to oxidize to form an alumina film of about 1 nm to 10 nm.
[0034]
Next, with respect to the two-dimensional array micro mirrors 106 in the mask making apparatus 100 of the present invention shown in FIG. 1, an embodiment of a structure in which the resistance of laser light on each mirror surface is further increased will be described with reference to FIGS. Will be explained. In the two-dimensional array micromirror 106 a shown in FIG. 2, the left and right of the gap with the window 122 which is covered so as to cover a large number of micromirrors 121 are connected by a tube 123, and a fan 126 installed inside the tube 123. The helium gas filled therein is circulated in the gas flow direction indicated by an arrow 127. As a result, a gas flow is generated on the surface of the micromirror 121, and the surface is air-cooled. Note that particles and the like in the circulated helium are removed by the filter 125 installed in the tube 123, so that clean helium always hits the surface of the micro mirror 121. According to the present embodiment, even if the laser beam L11 is applied to the surface of the micro mirror 121, the temperature rise is suppressed, so that the mirror surface does not melt or evaporate. In addition to the helium gas, other inert gas such as dry nitrogen or a hydrogen gas having a large heat capacity may be used. However, helium has a heat capacity about six times as large as that of nitrogen.
[0035]
Further, in the two-dimensional array micro mirror 106b shown in FIG. 3, gas inlets 133a and 133b are attached to the left and right of the gap with the window 132 which is covered so as to cover the many micro mirrors 131. Filters 134a and 134b are installed therein. In the present embodiment, the enlarged pattern generation unit 101 (shown in FIG. 1) to which the two-dimensional array micromirrors 106b are fixed moves in the X and Y directions. When moving in the direction 135, the helium (not shown) filled in the periphery in this embodiment flows into or out of the space between the micromirror 131 and the window 132, whereby the micromirror 131 is moved. Is air cooled. Further, the helium flowing in passes through the filter 134a or 134b, and is thus cleaned. The present embodiment utilizes the fact that the two-dimensional array micro mirror 106b itself moves, and unlike the two-dimensional array micro mirror 106a shown in FIG. Simplified.
[0036]
By the way, the reduction projection optical system 102 in the mask making apparatus 100 shown in FIG. 1 may be constituted by a monochromatic lens made of calcium fluoride having a high transmittance at a wavelength of 157 nm. However, in that case, the F2 laser oscillator 104 needs to have a single line and a narrow band having a wavelength width of about 0.1 pm or less. That is, although the F2 laser has several oscillation lines near the wavelength of 157 nm, for use in exposure, only the strongest 157.63 nm line is extracted and the wavelength width is reduced to about 1/10. It is necessary to narrow the band. However, the F2 laser for semiconductor chip exposure is required to have a laser output (average output) of 40 W or more, but the laser output is reduced to 1 W or less when the band is narrowed. There is. Therefore, as can be seen from the system configuration diagram of the exposure F2 laser 900 shown in FIG. 4, it is necessary to arrange the narrow-band F2 laser oscillator 901 and the F2 laser amplifier 902 and operate them synchronously by the synchronization control system 903. is there.
[0037]
According to this, the laser light L91 extracted from the narrowed-band F2 laser oscillator 901 has a small output of 1 W or less on average in output, but has a narrowed wavelength width to about 0.1 pm. The power is increased by the F2 laser amplifier 902 to obtain a laser beam L92 having a similar wavelength width and an average output of 40 W or more. However, in such a system called a dual-chamber system, not only the laser device becomes large and complicated in a short time, but also it is difficult to accurately adjust the timing for amplifying the laser beam having an extremely short pulse width of 10 to 30 ns. Thus, the synchronous control system 903 was required to have very high speed and accurate control. However, the structure of the combination of the oscillator and the amplifier as shown in FIG. 4 is slightly different, and an injection lock system in which a seeder and an oscillator are arranged may be used. The dual chamber type exposure F2 laser is described, for example, in SEICON Japan 2002, Technical programs for the semiconductor equipment and materials industries, Nos. 1-35 to 1-39.
[0038]
On the other hand, in this embodiment, since the F2 laser is used for drawing a mask, a laser output of 1 W or less, which is two digits smaller, is sufficient. The reason is that when exposing a semiconductor chip, it is necessary to expose the chip in less than one second in order to increase mass productivity. Fast enough if you can. In other words, the production of one semiconductor chip requires about 25 masks, but if one mask can be drawn in about one hour, all the masks can be drawn in about one day. Therefore, since the exposure time can be 100 times or more longer than the exposure of the semiconductor chip, only the narrowed F2 laser oscillator 901 of the exposure F2 laser 900 is used as the F2 laser oscillator 104 of the present embodiment. do it. This has not only reduced the size of the apparatus, but also eliminated the need for the synchronous control system 903, which requires a very advanced technique, unlike the exposure F2 laser 900.
[0039]
Next, as another embodiment which has the same configuration as that of the present embodiment but can further simplify the F2 laser oscillator 104, a lens made of calcium fluoride and a fluorine-doped quartz are used as the reduction projection optical system 102 in FIG. A lens using an achromatic lens in combination with a lens composed of:
[0040]
As can be seen from the graph of the transmittance characteristics of the optical material for ultraviolet light shown in FIG. 7, the transmittance of the fluorine-doped quartz at 157 nm of the fluorine laser greatly increases as compared with ordinary synthetic quartz, and the thickness of the fluorine-doped quartz is 5 mm. It is known to reach about 80% per unit. Therefore, it has been proposed that an achromatic lens made of two kinds of optical materials, calcium fluoride and fluorine-doped quartz, constitutes a reduction projection optical system of an F2 exposure machine.
[0041]
However, in practice, the reduction projection optical system for the F2 exposure apparatus is composed of a large number of tens of lenses, and several fluorine-doped quartz lenses incorporated as achromatic lenses alone require several lenses. May be as thick as several centimeters, and the transmittance may be reduced to 1/10 or less as a whole, and the power of exposure light that can be emitted from the entire reduced projection optical system is greatly reduced. Power could not be obtained. In addition, the temperature of the lens rises due to the heat of ultraviolet light that is absorbed to some extent by the fluorine-doped quartz lens, resulting in a change in the refractive index and a significant change in the focus of the projected image. I was Therefore, it has been extremely difficult to apply an achromatic lens using fluorine-doped quartz to the reduction projection optical system of the F2 exposure machine.
[0042]
On the other hand, in the present invention, since the exposure is for mask drawing, the required exposure power may be reduced by two orders of magnitude as described above. Therefore, it is easy to increase the power of the original laser to such an extent that the power that is absorbed by the reduction projection optical system is reduced. Moreover, since the heat of ultraviolet light absorbed by the fluorine-doped quartz used in the reduction projection optical system is reduced by two orders of magnitude, the temperature rise of the lens is also reduced by two orders of magnitude, and the focus fluctuation of the projected image can be ignored.
[0043]
As described above, an achromatic lens using two kinds of optical materials, calcium fluoride and fluorine-doped quartz, can be practically constructed for the first time by the mask making apparatus of the present invention. According to this, the configuration of the F2 laser oscillator 104 as a light source can be simplified as compared with the narrow-band F2 laser oscillator 901 of the F2 exposure machine.
[0044]
That is, as shown in FIG. 5, in the narrow band F2 laser oscillator 901, ultraviolet light having a wavelength of 157 nm generated by discharge in a laser chamber 913 filled with a laser gas composed of a mixed gas of F2 gas and He gas is used. Then, laser oscillation occurs by causing resonance between the output mirror 911 and the diffraction grating 912, and the laser beam L91 is extracted from the output mirror 911. The use of the diffraction grating 912 on the total reflection side of the resonator is for narrowing the band of the extracted laser light L91. However, the diffraction grating 912 and the laser chamber are arranged so that the surface of the diffraction grating 912 is irradiated with the laser light widely. 913 may be inserted with the prism magnifier 914. As described above, in the narrow-band F2 laser oscillator, not only various narrow-band elements are used, but also a high-precision wavelength stabilizing device is required to stabilize the wavelength of the narrow-band laser light L91. Therefore, the narrow band F2 laser oscillator 104 is also very expensive.
[0045]
On the other hand, in the F2 laser oscillator 104 of this embodiment, since it is not necessary to narrow the band, a diffraction grating is unnecessary, and a normal total reflection mirror 142 may be used on the total reflection mirror side. However, in order to cause laser oscillation only at the strongest oscillation line at a wavelength of 157 nm of the fluorine laser, it is only necessary to use a dispersion prism 144 between the laser chamber 143 and the total reflection mirror 142. In addition, since all of one oscillating line can be used, the wavelength stabilizing mechanism is not required, so that the apparatus can be configured at low cost.
[0046]
FIG. 8 is a configuration diagram of a mask making apparatus 200 as another embodiment of the present invention. In the mask making apparatus 200, a two-dimensional array light emitting device 201 is used as a two-dimensional array light control element constituting the present invention. In the two-dimensional array self-luminous device 201, only an element corresponding to a part of a target mask drawing pattern is caused to emit light, and the light emitting pattern is reduced by a reduction projection optical system 202 to form a mask substrate 203 on an XY stage 205. A drawing pattern 204 is formed thereon. The two-dimensional array light emitting device 201 can scan in the X and Y directions in the figure.
[0047]
As the two-dimensional array self-luminous device 201 used in this embodiment, an organic EL element containing polymethylphenylsilane having an emission spectrum shown in FIG. 11 is used. Since a strong light is emitted with a narrow spectral width having a peak at a wavelength of 353 nm, a resist applied to the mask substrate 203 for i-line can be used. Further, as the reduction projection optical system 202, one for an i-line exposure machine can be used as it is. In addition, regarding the organic EL element containing polymethylphenylsilane, for example, Jpn. J. Appl. Phys. Vol. 34 (1995) pp. This is described in L1365-167.
[0048]
The two-dimensional array self-luminous device 201 of the mask making apparatus 200 has a water-cooled structure in this embodiment, as shown in FIG. That is, the cooling water is directly in contact with the cooling surface 201b, which is the surface opposite to the light emitting surface 201a, like the cooling waters 210a and 210b. As the cooling water 210a, it is preferable to use pure water in which about 9 ppm of dissolved oxygen has been almost degassed and reduced to about 1 ppb. Cooling water is used which has been cooled to more than 0 ° C. and 7 ° C. or less, preferably about 5 ° C. Bubbles are completely removed from the cooling water. This is because bubbles cause vibration. Further, the cooling water is preferably made of a reducing component in which a reducing component is dissolved, which is preferable in order to prevent rust of the metal and suppress the growth of bacteria. For this purpose, for example, pure water to which hydrogen gas is added at a concentration lower than or equal to the saturation solubility may be used. Since hydrogen gas is added through a dissolving film and has a strong reducing action, it does not rust metal pipes and does not generate bacteria. In addition, as the cooling water used in the present invention, it is preferable to use the cooling water described in JP-A-2000-336351.
[0049]
As in this embodiment, in the mask making apparatus 200 of the present invention, the two-dimensional array self-luminous device 201 has a water-cooled structure, unlike the two-dimensional array self-luminous device for display used in general homes. The reason is that the mask making apparatus 200 is an industrial manufacturing apparatus that is likely to be continuously operated for tens of hours or days, so that the malfunction of the two-dimensional array self-luminous device 201 due to heat generation is reliably suppressed. Therefore, a water cooling structure that is more complex than that of natural air cooling is used.
[0050]
Next, an embodiment using a PDP in the two-dimensional array self-luminous device 201 in the mask making apparatus 200 of the present invention shown in FIG. 8 will be described with reference to FIGS. FIG. 12 is a structural diagram showing a structure of a general AC surface discharge type PDP. As a basic structure of the AC surface discharge type PDP 800, a mixed gas obtained by adding about 4% of Xe gas to Ne (or He) gas is sealed between a glass substrate 801 and a glass substrate 802. An in-plane electrode 805 is arranged in a dielectric 803 attached to the surface. Note that a protective film 804 is provided on the surface of the dielectric 803, and a phosphor 806 is provided on the surface of the glass substrate 802. When a discharge 807 is caused in the mixed gas by the in-plane electrode 805, the generated ultraviolet light excites the phosphor 806 to generate visible light 808.
[0051]
As shown in FIG. 13, in the emission spectrum of a general PDP, there is almost no component having a wavelength of 400 nm or less even with respect to the shortest wavelength blue emission. Therefore, the PDP of the present embodiment is almost the same as a general AC surface discharge type PDP 800, as can be seen from the structure diagram of the PDP 400 shown in FIG. 15, but uses a phosphor on the surface of the glass substrate 402. Absent. According to this, when the discharge 407 is caused in the mixed gas by the in-plane electrode 404, the ultraviolet light 408 is extracted to the outside as it is. In this embodiment, the ultraviolet light 408 is used for exposure for mask drawing. According to this, the ultraviolet light 408 has a sharp spectrum at a wavelength of 147 nm, as can be seen from the graph of the emission spectrum of the PDP 400 shown in FIG. Therefore, in the mask making apparatus of the present invention using the PDP 400 of this embodiment, higher resolution performance can be obtained than in a system using a 157 nm wavelength fluorine laser as a light source. In addition, since the phosphor is removed from the general AC surface discharge type PDP as in this embodiment, not only the manufacturing process is simplified, but also the energy required for converting ultraviolet light to visible light. Efficiency did not decrease and total energy use efficiency improved.
[0052]
In the PDP 400, as a material of the glass substrate 402, it is preferable to use calcium fluoride or magnesium fluoride having a high transmittance to ultraviolet light having a wavelength of 147 nm. Further, a bandpass filter that cuts a wavelength higher than 147 nm may be disposed outside the glass substrate 402 (the lower side in FIG. 14).
[0053]
Further, in the mask making apparatus 200 using the PDP 400 of this embodiment, since the exposure wavelength is 147 nm, which is close to the wavelength of the fluorine laser of 157 nm, a resist for the fluorine laser can be used. However, it is preferable to use a catadioptric system resistant to chromatic aberration as the reduction projection optical system 202.
[0054]
As the two-dimensional array self-luminous device 201 in the mask making apparatus 200 of the present invention shown in FIG. 8, in addition to using an organic EL or PDP, a device in which semiconductor lasers operating in the ultraviolet region are two-dimensionally arranged is used. Is also good. The semiconductor laser has a feature that the light emitting portion can be made compact, so that it can be used two-dimensionally by arranging a large number of the light emitting portions. In addition, since the emission spectrum is sharp, chromatic aberration can be easily suppressed in the reduced projection optical system 202.
[0055]
Next, an embodiment in which an immersion optical system is applied to the mask making apparatus of the present invention will be described with reference to FIG. FIG. 16 shows a mask making apparatus 500 of the present invention, which is almost the same in configuration as the mask making apparatus 100 shown in FIG. However, an ArF excimer laser oscillator 504 is used as an exposure light source, and a mask substrate 509 is set in pure water 513 filled in a water tank 503. As shown in FIG. 17, the space between the lowermost lens of the reduction projection optical system 502 and the mask substrate 509 is completely filled with pure water 513. Pure water flows between the lowermost lens and the mask substrate 509 in a laminar flow. Here, the inside of the apparatus is filled with dry nitrogen, but may be filled with another inert gas, for example, helium having a large heat capacity.
[0056]
According to the present embodiment, the wavelength of the laser beam L51 from the ArF excimer laser oscillator 504 is 193 nm, but the refractive index between the lowermost lens of the reduction projection optical system 502 and the mask substrate 509 is about 1.45. Therefore, when compared with the case where the space between them is filled with a general gas such as nitrogen or air, the resolution is substantially equivalent to the case where the exposure is performed at a wavelength of 193 / 1.45 = 133 nm, and the resolution is greatly increased. To improve. Moreover, since the mask substrate 509 is only immersed in the water tank 503, it is not necessary to reciprocate the wafer at a high speed unlike an exposure apparatus for exposing a semiconductor chip, so that the structure of the water tank 503 is very simple. Be transformed into Specifically, it is only necessary to provide a supply port and a drain port of the pure water 513. Here, in addition to water, an organic compound such as ethyl alcohol and benzene can be used as the liquid.
[0057]
In the pure water 513 used in the present embodiment, the dissolved oxygen concentration is suppressed to 1 ppm or less, which is a small value of about 1/40 or less of the saturated dissolved concentration. As a result, ultraviolet light having a wavelength of 193 nm, which is exposure light, is not attenuated in the pure water 513. That is, oxygen strongly absorbs ultraviolet light having a wavelength of 193 nm.
[0058]
On the other hand, the dissolved nitrogen concentration of the pure water 513 is suppressed to 1 ppm which is equal to or lower than the saturation solubility (about 19 ppm at room temperature). As a result, even if the dry nitrogen filled in the space in contact with the pure water 513 is slightly dissolved, the saturated dissolved concentration does not reach, so that no bubbles are generated in the pure water 513. Thus, the ultraviolet light as the exposure light is not disturbed by the bubbles. Although the dissolved nitrogen concentration is effective as long as it is about 1/2 or less of the saturated dissolved concentration, it is better to be as low as possible.
[0059]
Further, the space in contact with the pure water 513 (that is, the space filling the inside of the apparatus) is completely sealed, and when the space is filled with helium gas, the dissolved concentration of the pure water 513 with respect to the helium gas is set to the saturated dissolved concentration (about 1. 5 ppm) or less (for example, 0.1 ppm or less). Also, when filling with argon gas, the dissolved concentration of argon gas may be set to a saturated dissolved concentration or less.
[0060]
During the exposure, the pure water 513 is preferably circulated slowly in the water tank 503 because a temperature gradient is not generated, and it is preferable that the pure water 513 be circulated in a laminar flow. Further, a cooling device such as a Peltier element may be provided in the water tank 503. The generation of air bubbles in pure water must be strictly avoided. For this reason, pure water is degassed, and the concentration of the dissolved gas is always controlled to be less than the saturation solubility.
[0061]
The liquid immersion technique described above can be applied to a general semiconductor exposure apparatus. That is, according to the present invention, in an exposure apparatus for manufacturing a semiconductor device, which projects a mask pattern onto a semiconductor substrate by a projection optical device, pure water is layered between the final light projecting means of the projection optical device and the semiconductor substrate. An exposure apparatus for manufacturing a semiconductor device, characterized in that a flow is made in a flowing manner, the pure water from which bubbles are removed and oxygen is removed is used, and the pure water flows through a closed portion. . In such an exposure apparatus, all of the above techniques relating to pure water can be applied.
[0062]
In the present embodiment, the ArF excimer laser oscillator 504 and the reduction projection optical system 502 may use the ArF excimer laser oscillator and the reduction projection optical system used in the ArF exposure machine for semiconductor chip exposure as they are. . In that case, the reduction projection optical system 502 is generally configured by an achromatic lens formed by a combination of two kinds of lenses, a quartz lens and a calcium fluoride lens. The reason is that the ArF excimer laser oscillator in the ArF exposing machine for chip exposure has a narrow band, but has a wavelength width of about 0.5 pm, so chromatic aberration cannot be ignored when using a monochromatic lens composed only of a quartz lens. This is because it occurs as large as possible.
[0063]
On the other hand, in the present invention, the laser output required for the ArF excimer laser oscillator 504 may be about two orders of magnitude lower than that for semiconductor chip exposure, as described above. Therefore, even if the laser output is reduced, the ArF excimer laser oscillator 504 can further narrow the band and reduce the wavelength width to 0.1 pm or less. According to this, the reduction projection optical system 502 can use a monochromatic lens composed of only a quartz lens. As a result, the design and manufacture of the reduction projection optical system 502 are facilitated, so that the cost can be reduced.
[0064]
Further, in that case, quartz is stronger than calcium fluoride in water (that is, its solubility in water [dissolution weight in 100 grams of water]) is 0 for quartz but 1/1000 for calcium fluoride. It is known that the liquid immersion optical system is applied as in this embodiment.
[0065]
Note that, in the mask making apparatus of the present invention, instead of using an ArF excimer laser oscillator as an ultraviolet laser device required in a configuration using a two-dimensionally arranged light control element, a wavelength 190 to 190 equivalent to that of an ArF excimer laser oscillator is used. A wavelength conversion laser system in which a 200 nm ultraviolet laser beam is converted from an infrared laser beam oscillated from a solid-state laser to an ultraviolet laser beam by wavelength conversion may be used. For example, a near-infrared light having a wavelength of 773 nm is generated from a titanium sapphire laser excited by a YAG laser, and 387 nm ultraviolet light, which is a second harmonic of the light, is generated. Ultraviolet light having a wavelength of 258 nm is generated by sum frequency generation with light (that is, a wavelength conversion method of generating a laser light having a frequency corresponding to the sum of the respective frequencies of the two laser lights to be combined). It is known that the ultraviolet light having a wavelength of 258 nm can generate ultraviolet light having a wavelength of 193 nm by generating a sum frequency with the near infrared light having a wavelength of 773 nm. The generation of the wavelength of 193 nm by the wavelength conversion type laser system is described in, for example, Laser Research, August 1999, pp. 525-530.
[0066]
However, a wavelength conversion type laser system based on a solid-state laser as described above has a laser output (average output) that is at least two orders of magnitude smaller than an excimer laser, and is therefore used in mass production as a light source for exposing a semiconductor chip. Did not come. On the other hand, in the mask making apparatus of the present invention, the required laser output may be about two orders of magnitude smaller than that of the semiconductor chip exposure laser, as described above. it can.
[0067]
In particular, as described above, the pulse repetition rate in the wavelength conversion type laser system based on the YAG laser is determined by the original YAG laser. However, the YAG laser has a high repetition operation of 5 to 10 kHz by the ultrasonic Q switch. It is known to be easy. According to this, when a pulse laser is used as an ultraviolet light source in the mask making apparatus of the present invention, one pattern of the two-dimensionally arrayed micromirrors (ie, a part of the mask pattern) ) Is transferred to the mask substrate, the higher the pulse repetition rate, the shorter the time to draw the entire mask. Therefore, a wavelength conversion type laser system based on a solid-state laser may be used as the ultraviolet light source in the mask making apparatus of the present invention.
[0068]
Furthermore, when a wavelength conversion type laser system is used, the laser light having pattern information by the two-dimensionally arrayed micromirrors constituting the present invention (that is, laser light traveling from the two-dimensionally arrayed micromirrors so as to impinge on the mask substrate) is emitted. After formation, wavelength conversion may be performed. For example, in the case of the wavelength conversion described above, only near-infrared light having a wavelength of 773 nm generated from a titanium sapphire laser is made incident on a two-dimensional arrayed micromirror to generate laser light having pattern information, which is 258 nm in wavelength. When the sum frequency with the ultraviolet light is generated, ultraviolet light having a wavelength of 193 nm and having pattern information is obtained. However, since ultraviolet light having a wavelength of 258 nm other than the pattern information to be exposed is also included, the light needs to be separated through a cutoff filter. According to this, since the laser light irradiated to the two-dimensionally arrayed micromirrors has a long wavelength of 773 nm, the reflectance at each mirror increases to about 99%, and the absorption on the mirror surface decreases, No damage occurs.
[0069]
【The invention's effect】
As described above, according to the mask making apparatus of the present invention, since the ultraviolet resistance of the two-dimensionally arrayed micromirror is improved, it is said that not only has high reliability over a long period of time, but also the damage to the mirror increases. It also has sufficient durability against laser light in the vacuum ultraviolet region. Therefore, a highly reliable device can be provided particularly when an ArF excimer laser having a wavelength of 193 nm or a fluorine laser having a wavelength of 157 nm is used as a light source.
[0070]
Further, when a fluorine laser is used as a light source, the reduction projection optical system can be constituted by an achromatic lens, so that the band narrowing of the fluorine laser is simplified and the cost of the entire apparatus is reduced.
[0071]
In addition, by using an organic EL element containing polymethylphenylsilane as the two-dimensionally arranged light control element of the present invention, the reduced projection optical system and i-line resist of an i-line exposure machine for semiconductor chip exposure can be used as it is. Now you can.
[0072]
In addition, by using a PDP from which a phosphor has been removed for the two-dimensionally arranged light control element of the present invention, the exposure wavelength can be made 147 nm, so that high resolution performance can be obtained. In addition, a resist for a fluorine laser having a wavelength of 157 nm can be used.
[0073]
Further, in the present invention, since it is not necessary to dispose the mask substrate on the moving stage, the liquid immersion optical system can be easily applied, and the resolution is dramatically improved.
[Brief description of the drawings]
FIG. 1 is an overall configuration diagram of a mask producing apparatus 100 of the present invention.
FIG. 2 is a structural diagram of a two-dimensional array micromirror 106a.
FIG. 3 is a structural diagram of a two-dimensional array micromirror 106b.
FIG. 4 is a system configuration diagram of an exposure F2 laser 900.
FIG. 5 is a configuration diagram of a narrow-band F2 laser oscillator 901.
FIG. 6 is a configuration diagram of an F2 laser oscillator 104.
FIG. 7 is a diagram showing transmittance characteristics of an ultraviolet optical material.
FIG. 8 is a configuration diagram of a mask production apparatus 200.
FIG. 9 is a configuration diagram of a two-dimensional array self-luminous device 201.
FIG. 10 is a diagram showing an emission spectrum of a general organic EL.
FIG. 11 is a diagram showing an emission spectrum of the organic EL used in the present invention.
FIG. 12 is a schematic configuration diagram of an AC surface discharge type PDP 800.
FIG. 13 is a diagram showing an emission spectrum of a general PDP.
FIG. 14 is a configuration diagram of a PDP 400 used in the present invention.
FIG. 15 is a diagram showing an emission spectrum of the PDP used in the present invention.
FIG. 16 is a configuration diagram of a mask producing apparatus 500.
FIG. 17 is a layout diagram of pure water 513 in the mask making apparatus 500.
[Explanation of symbols]
100, 200, 500 mask making apparatus
101, 501 Enlarged pattern generation unit
102, 202, 502 Reduction projection optical system
103 stage
104 UV laser oscillator
105a, 105b, 105c mirror
106, 106a, 106b, 506 Two-dimensional array micro mirror
107,507 Mask pattern data output device
108a, 108b, 508a, 508b Lens
109, 203, 509 Mask substrate
110, 510 Enlarged pattern
111, 204, 511 drawing pattern
121, 131 Micro mirror
122, 132 Wind
123 tubes
125, 134a, 134b filters
126 fans
127 gas flow
133a, 133b Gas inlet / outlet
135 Moving direction
141, 911 output mirror
142 total reflection mirror
143, 913 Laser chamber
144 Dispersion prism
201 Two-dimensional array self-luminous device
201a light emitting surface
201b Cooling surface
205 XY stage
206 projected image
210a, 210b cooling water
400 PDP
401, 402, 801 and 802 glass substrates
403, 803 dielectric
405, 804 Protective film
406 phosphor
407 807 Discharge
408 UV light
503 Aquarium
513 pure water
808 visible light
800 AC surface discharge type PDP
900 F2 laser for exposure
901 Narrowband F2 laser oscillator
902 F2 laser amplifier
903 Synchronous control system
912 diffraction grating
914 prism magnifier
L11, L12, L51, L52, L91, L92 Laser light

Claims (15)

A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. The first mask pattern is input to the reduction projection optical device to form a reduced second mask pattern. A mask manufacturing apparatus for manufacturing a semiconductor device, wherein a two-dimensionally arrayed micromirror having at least a surface of aluminum whose orientation is oriented substantially at (111) is used. A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. The first mask pattern is input to the reduction projection optical apparatus to form a reduced second mask pattern. In the mask manufacturing apparatus for manufacturing a semiconductor device, Al2O3 is used as the two-dimensionally arranged light control element. A mask making apparatus for manufacturing a semiconductor device, characterized by using a two-dimensionally arrayed micromirror having a mirror surface made of aluminum having a film made of aluminum on its surface. A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. In the mask making apparatus for manufacturing a semiconductor device, wherein the first mask pattern is input to the reduction projection optical device to form a reduced second mask pattern, the light control element is a two-dimensionally arrayed self-luminous device. An apparatus for fabricating a mask for manufacturing a semiconductor device, comprising: a cooling means for cooling the self-light emitting element with water. A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. In the mask making apparatus for manufacturing a semiconductor device, wherein the first mask pattern is input to the reduction projection optical device to form a reduced second mask pattern, a fluorine laser is used as an exposure light source for pattern drawing of the mask. Wherein the first mask pattern projection device or the reduction projection optical device is constituted by an achromatic lens formed by a combination of a lens made of calcium fluoride and a lens made of fluorine-doped quartz. Mask making equipment for semiconductor device manufacturing. A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. The first mask pattern is input to the reduction projection optical device to form a reduced second mask pattern. A mask manufacturing apparatus for manufacturing a semiconductor device, wherein an organic EL element having an emission wavelength of 320 nm to 420 nm is used. A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. The first mask pattern is input to the reduction projection optical device to form a reduced second mask pattern. In the mask manufacturing apparatus for manufacturing a semiconductor device, the two-dimensional array of light control elements may include ultraviolet light. A mask producing apparatus for manufacturing a semiconductor device, wherein a plasma display device emitting light in an optical region is used, and the ultraviolet light is used for forming a first mask pattern. A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. The first mask pattern is input to the reduction projection optical device to form a reduced second mask pattern. A mask producing apparatus for manufacturing a semiconductor device, wherein a liquid is filled between a lens close to a substrate and a mask substrate. 8. The mask manufacturing apparatus for manufacturing a semiconductor device according to claim 7, wherein the liquid is degassed with dissolved oxygen, and at least a portion of the mask substrate filled with the liquid is sealed. Among the same kind of gas contained in the gas filling the space in contact with the liquid, at least one kind of gas, the dissolved concentration of the gas in the liquid is set to a saturated solubility or less. 8. The mask manufacturing apparatus for manufacturing a semiconductor device according to claim 7. 6. The apparatus according to claim 5, wherein the reduction projection optical device is constituted by a monochromatic lens including only a quartz lens. A mask pattern projecting device using a two-dimensionally arranged light control element and a reduction projection optical device, wherein a first mask pattern is output from the mask pattern projecting device by controlling the light control element according to mask pattern data. Then, the first mask pattern is input to the reduction projection optical device to form a reduced second mask pattern. A mask making apparatus for manufacturing a semiconductor device, characterized in that a wavelength conversion laser system based on a solid-state laser is used as an ultraviolet light source using a micromirror in the shape of a solid. A mask pattern projecting device using a two-dimensional array of light control elements and a reduction projection optical device, and the first mask pattern is output from the mask pattern projecting apparatus by controlling the light control elements according to mask pattern data. The first mask pattern is input to the reduction projection optical apparatus to form a reduced second mask pattern. In the mask manufacturing apparatus for manufacturing a semiconductor device, a two-dimensional array light control element is used as a two-dimensional array light control element. An apparatus for manufacturing a mask for manufacturing a semiconductor device, comprising: means for using a micromirror in a shape of a bar; and means for air cooling the micromirror with an inert gas or hydrogen gas. 4. The mask making apparatus for manufacturing a semiconductor device according to claim 3, wherein cooling water containing a degassed reducing component of more than 0 ° C. and not more than 7 ° C. is introduced into said cooling means. In an exposure apparatus for manufacturing a semiconductor device, wherein a mask pattern is projected onto a semiconductor substrate by a projection optical device, pure water is caused to flow in a laminar flow between the final light projecting means of the projection optical device and the semiconductor substrate, and An exposure apparatus for manufacturing a semiconductor device, wherein water from which bubbles and oxygen are removed is used as the water, and the pure water flows through a closed portion. The exposure apparatus for manufacturing a semiconductor device according to claim 14, wherein an inert gas is dissolved in the pure water at a concentration equal to or lower than a saturation solubility.

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