JP2004235433A - Plasma processing system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a plasma processing system capable of processing the surface of a sample uniformly. <P>SOLUTION: The plasma processing system comprises a dielectric 7 formed into planar shape along the processing surface of a sample 12 while being connected with a microwave generator 1 and making the field strength distribution of the microwave generated by the microwave generator 1 substantially uniform along the processing surface of the sample 12. A plurality of parts 2a and 2b for introducing the microwave from the microwave generator 1 to the dielectric 7 are provided on the surface (hereinafter, referred to an introduction surface) of the microwave generator 1 touching the dielectric 7. Central positions of the introducing parts 2a and 2b are arranged on a plurality of axes extending in the same direction on the introduction surface and the phase of the microwaves in the dielectric is arranged at the position of each axis. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

このように幅Ｗ_１を設定することで、スロット３０ｄから導入されるマイクロ波と矩形誘電体１５内のマイクロ波との結合度を高めることができる。
第２に、矩形誘電体１５のＹ方向に沿う端面と軸Ａ１、Ａ２とのそれぞれの距離Ｄが、実質的に、Ｄ＝ｎ_Ｄ（１／４）λ_１５を満たすように軸Ａ１、Ａ２を設定し、その軸上にスロット３０ｄを配置する。ここで、λ_１５は矩形誘電体１５内のマイクロ波の波長、ｎ_Ｄは１以上の整数である。このように距離Ｄを設定することで、スロット３０ｄから導入されるマイクロ波と矩形誘電体１５内のマイクロ波との結合度を高めたり、逆に異常放電を抑制することができる。つまり、例えば矩形誘電体１５とＨ面スロットアンテナ３０との結合部をチョークと逆の関係とすることができるので、両者のより高い結合度を得ることができる。よって、マイクロ波を均一化し易くなる。結合度の高低は、例えば、結合度を高める場合にはｎ_Ｄとして奇数を選択し、異常放電を抑制する場合にはｎ_Ｄとして偶数を選択する。
［マイクロ波の波長の関係］
次に、Ｈ面スロットアンテナ３０内のマイクロ波の波長λ_３０と、矩形誘電体１５内のマイクロ波の波長λ_１５との関係について説明する。
【００３８】
軸Ａ１及び軸Ａ２のそれぞれから矩形誘電体１５に導入されるマイクロ波が同位相の場合は下記式（１２）を満たすように、逆位相の場合は下記式（１３）を満たすように設定する。
λ_３０／２＝２ｍ（１／２）λ_１５ …（１２）
λ_３０／２＝（２ｍ＋１）（１／２）λ_１５ …（１３）
ここで、ｍは１以上の整数である。前記式（１２）または（１３）の関係を満たすように、Ｈ面スロットアンテナの形状もしくは構造を変更することもできる。このように設定することで、Ｈ面スロットアンテナ３０及び矩形誘電体１５内のそれぞれのマイクロ波の位相位置が一致し、同時に定在波条件を満たすことができる。そのため、それぞれの伝搬領域内を伝搬するマイクロ波がお互いに干渉して定在波条件を乱すのを低減することができる。よって、マイクロ波の減衰を抑えて、均一なマイクロ波を発生させ易く、均一なプラズマにより均一な薄膜を生成することができる。
【００３９】
上記では、単独のＨ面スロットアンテナ３０のみを使用しているが、矩形導波管を分岐して複数のＨ面スロットアンテナ３０と接続し、矩形誘電体１５にマイクロ波を導入しても良い。分岐することで、大型の処理装置であっても均一にマイクロ波を供給することができる。分岐の方法としては、例えば２つに分岐する場合には、２つのＨ面スロットアンテナ３０内部のマイクロ波の位相状態が同相となるＨ分岐や、位相状態が逆相となるＥ分岐を使用することができる。
図９（ａ）、（ｂ）は、矩形導波管２をＨ分岐またはＥ分岐に分岐後、２つのＨ面スロットアンテナ３０を介して矩形誘電体１５にマイクロ波を導入する場合の、Ｈ面スロットアンテナ３０の底部３０ｃにおけるスロット３０ｄの配置位置及びＨ面スロットアンテナ３０内のＹ方向のマイクロ波の波形を示している。図９におけるＨ面スロットアンテナ３０における軸Ａ１及び軸Ａ２上に位置するスロット３０ｄの配置方法は、図８と同様である。
【００４０】
図９（ａ）はスロット３０ｄが同じ位置に配置された２つの同一のＨ面スロットアンテナ３０の平面図、同図（ｂ）はスロット３０ｄがＹ方向に関して線対称に配置された２つの同一のＨ面スロットアンテナ３０の平面図である。ここで、図９（ａ）に示すように、２つのＨ面スロットアンテナ３０におけるスロット３０ｄの配置位置が同じ場合を“同相の配置位置”とし、同図（ｂ）に示すように線対称で、互いの配置位置が対称の場合を“逆相の配置位置”とする。また、図９に示すように、隣接するＨ面スロットアンテナ３０のスロット３０ｄのＸ方向の間隔をＬ_４とする。図９（ａ）、（ｂ）では、図中左側の波形は左側のＨ面スロットアンテナ３０内のマイクロ波を、図中右側の波形は、それぞれＨ分岐、Ｅ分岐後の右側のＨ面スロットアンテナ３０内のマイクロ波を示している。
【００４１】
また、以下の表１に、Ｈ分岐またはＥ分岐と同相の配置位置または逆相の配置位置とを組み合わせた場合における間隔Ｌ_４の関係を示す。ここで、間隔Ｌ_４は、２つのＨ面スロットアンテナ３０の各々のスロット３０ｄの中心位置における、矩形誘電体１５内のマイクロ波の位相が揃うように設定されている。
【００４２】
【表１】

以上のように間隔Ｌ_４を設定することで、スロット３０ｄから矩形誘電体１５に導入されるマイクロ波の位相が揃うため、互いに打ち消し合う等の干渉が低減する。
また、Ｈ面スロットアンテナ３０内でのマイクロ波の干渉等を低減するため、シングルモードでの動作が可能な形状とするのが好ましい。シングルモードで動作可能なＨ面スロットアンテナ３０の例えばＹ方向の長さＬ_Ｙは、下記式（１４）より求まる。
【００４３】
【数２】

ここで、λ_３０はＨ面スロットアンテナ３０内のマイクロ波の波長、λは自由空間波長である。
なお、Ｈ面スロットアンテナの代わりに、Ｅ面スロットアンテナ、円形導波管、同軸導波管、スロット以外の結合素子等を使用することもできる。
本実施例に係るプラズマ酸窒化装置では、上記のようにスロット３０ｄの配置位置と、Ｈ面スロットアンテナ３０と矩形誘電体１５とのマイクロ波の波長の関係を設定することで、均一に薄膜を形成することができる。さらに、本実施例では、矩形誘電体１５、矩形処理室２５ｂ、矩形導波管２０等の試料１２の処理面に沿う断面が矩形状であるため、マイクロ波の電界強度分布が偏りにくく、ガスの流量・組成比等のプロセスマージンを拡大することができる。
【００４４】
ただし、矩形処理室２５ｂは、その中で発生したプラズマによりマイクロ波が吸収されるため通常マイクロ波が伝搬する領域ではない。よって、矩形処理室２５ｂの試料１２の処理面に沿う方向の断面は必ずしも矩形状である必要はない。しかし、マイクロ波が完全に吸収されずに矩形処理室２５ｂ内を伝搬する場合があるので、不均一なマイクロ波によりプラズマの均一性が乱されないように矩形処理室２５ｂの試料１２処理面に沿う断面を矩形状とするのが好ましい。このようにすることで、プラズマの均一性をさらに高め、より均一な薄膜を形成することができ、また均一なプラズマを得るためのプロセスマージンを広げることができる。
【００４５】
また上記では、Ｈ面スロットアンテナ３０、矩形誘電体１５、矩形処理室２５ｂ、矩形チャンバ蓋２５ａ等の形状は、長方形状または正方形状以外の矩形状に形成されていても良い。なお、二組の対向する二辺が平行な矩形状に形成されていると、マイクロ波の偏りが少なくより好ましい。
＜第２実施例＞
以下に、第１実施形態例に係るプラズマ酸窒化装置について、第２実施例を挙げてさらに詳細に説明する。第２実施例に係るプラズマ酸窒化装置は、以下に記載の矩形アンテナ誘電体、矩形スロット板３６及び矩形封止誘電体３８以外については、第１実施例と同様の構成を有している。
【００４６】
第２実施例に係るプラズマ酸窒化装置の外観は図４と同様である。図１０は図４のＢ−Ｂ’を含む図中Ｘ軸に垂直な断面図、図１１は図１０のプラズマ酸窒化装置の要部の分解斜視図である。
矩形チャンバ蓋２５ａは、図１０、図１１に示すように、上から順にそれぞれ試料１２の処理面に沿う断面が矩形状の誘電体（以下、矩形アンテナ誘電体）３４、スロット３６ａが設けられた、試料１２の処理面に沿う断面が矩形状のスロット板（以下、矩形スロット板）３６及び試料１２の処理面に沿う断面が矩形状の封止誘電体（以下、矩形封止誘電体）３８を有している。
【００４７】
以下に、本実施例に係るプラズマ酸窒化装置の各部について詳細に説明する。
［矩形アンテナ誘電体］
矩形状に形成されている矩形アンテナ誘電体３４は、マイクロ波の電界強度分布を均一化する。また、矩形アンテナ誘電体３４は、矩形処理室２５ｂとの間に設けられた矩形スロット板３６により、矩形アンテナ誘電体３４内のマイクロ波と矩形処理室２５ｂ内のプラズマにより反射されたマイクロ波との結合を抑制されている。そのため、矩形アンテナ誘電体３４内を伝搬するマイクロ波はプラズマによる影響を受けにくく、マイクロ波の電界強度分布を均一化し易い。
［矩形封止誘電体］
矩形封止誘電体３８は、矩形状に形成されており、矩形スロット板３６より導入されたマイクロ波の電界強度分布の均一性を保持したままあるいはさらに高め、矩形封止誘電体３８下方の矩形処理室２５ｂにプラズマを発生させるための電界を形成する。また、矩形封止誘電体３８は、真空状態の矩形処理室２５ｂを大気から隔離し、清浄空間に保つ。
［矩形スロット板］
矩形スロット板３６は、矩形アンテナ誘電体３４から導入されるマイクロ波の電界強度分布の均一性を、スロット３６ａにより保持したままあるいはさらに高める。また、矩形処理室２５ｂで発生されるプラズマの影響が、矩形アンテナ誘電体３４に及ぶのを抑制している。矩形スロット板３６は、必ずしも試料１２の処理面に沿う断面が矩形状である必要はなく、矩形アンテナ誘電体３４、矩形封止誘電体３８及び矩形処理室２５ｂを覆う形状であれば良く、例えば円形状であっても良い。
【００４８】
上記のように、矩形アンテナ誘電体３４、矩形スロット板３６及び矩形封止誘電体３８により、矩形封止誘電体３８内のマイクロ波の電界強度分布がさらに均一化される。
［その他の実施形態例］
（Ａ）本発明は、シリコンプロセス以外の化合物、ＦＰＤ（Ｆｌａｔ Ｐａｎｅｌ Ｄｉｓｐｌａｙ）プロセス等に適用可能である。また、プラズマを用いないマイクロ波照射装置、マイクロ波加熱装置等にも適用可能である。
（Ｂ）前記実施例は、必要に応じて組み合わせて用いることができる。
【００４９】
【発明の効果】
本発明を用いれば、試料の処理面に対して均一な処理を施すことができるプラズマ処理装置を提供することができる。
【図面の簡単な説明】
【図１】第１実施形態例に係るプラズマ酸窒化装置の外観図。
【図２】Ａ−Ａ’を含む試料の処理面に垂直な方向における図１の装置の断面図。
【図３】図２の断面における矩形導波管２と円形誘電体７内のマイクロ波の波長との関係を示す説明図。
【図４】第１実施例のプラズマ酸窒化装置の外観図。
【図５】図４のＢ−Ｂ’を含む図中Ｘ軸に垂直な図４の装置の断面図。
【図６】図４に示すプラズマ酸窒化装置の要部の分解斜視図。
【図７】Ｈ面スロットアンテナのスロット形状。
【図８】（ａ）図４のプラズマ酸窒化装置のスロット３０ｄの位置とＨ面スロットアンテナ３０内のマイクロ波の波長との関係を示す説明図。
（ｂ）図４のプラズマ酸窒化装置のＹ方向に垂直な断面におけるＨ面スロットアンテナ３０及び矩形アンテナ誘電体３４内のマイクロ波の波長との関係を示す説明図。
【図９】（ａ）２つのＨ面スロットアンテナにおけるスロット３０ｄの配置図（１）。
（ｂ）２つのＨ面スロットアンテナにおけるスロット３０ｄの配置図（２）。
【図１０】図４のＢ−Ｂ’を含む図中Ｘ軸に垂直な断面図。
【図１１】図１０のプラズマ酸窒化装置の要部の分解斜視図。
【符号の説明】
１ マイクロ波発生器
２、２０ 矩形導波管
２ａ、２ｂ 分岐
３ 同軸アンテナ
４ チャンバ
４ａ 円形チャンバ蓋
４ｂ 円形処理室
７ 円形誘電体
１２ 試料
１５ 矩形誘電体
２５ 矩形チャンバ
２５ａ 矩形チャンバ蓋
２５ｂ 矩形処理室
３０ Ｈ面スロットアンテナ
３４ 矩形アンテナ誘電体
３８ 矩形封止誘電体
３６ 矩形スロット板[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a plasma processing apparatus that uses plasma generated by microwaves.
[0002]
[Prior art]
A plasma processing apparatus using a microwave (for example, 2.45 GHz) is used for forming an IC (integrated circuit). In this plasma processing apparatus using microwaves, high-density, low-electron-temperature plasma can be obtained by microwaves having a high frequency. Therefore, it is possible to suppress the influence of electrical or physical damage to a thin film such as a gate oxide film. By using microwaves, a thin film with little damage can be efficiently formed.
[0003]
However, in recent years, the miniaturization of ICs and the increase in diameter of wafers have been progressing, and accordingly, it has been required to uniformly form a large-diameter thin film. Therefore, a method has been used in which non-uniform microwaves are reflected and absorbed by plasma to make them uniform by utilizing the property of microwaves being reflected and absorbed by plasma. In this method, for example, microwaves are introduced only from the outer portion of a processing chamber having a circular or cylindrical shape to introduce non-uniform microwaves, and the non-uniformity of the microwaves is absorbed by plasma to balance the microwaves. In this way, a uniform thin film is formed.
[0004]
As another method, there is disclosed a technique of forming a large-diameter thin film by branching an introduction window for introducing a microwave and uniformly introducing the microwave into a dielectric in a processing apparatus (for example, Japanese Patent Application Laid-Open No. H11-163873). Patent Document 1).
[0005]
[Patent Document 1]
JP-A-8-316198
[0006]
[Problems to be solved by the invention]
However, in the method of absorbing the non-uniformity of the microwave with the plasma, it is difficult to maintain the uniformity of the microwave with respect to changes in process conditions such as gas flow rate, composition ratio, pressure, and sample temperature.
Also, in the method according to Patent Document 1, since microwaves are introduced into a dielectric inside one processing chamber through a plurality of introduction windows, the microwaves introduced from the respective introduction windows interfere with each other. And the microwaves become non-uniform.
[0007]
Such non-uniform microwaves generate non-uniform plasma, and gas molecules excited and activated by the non-uniform plasma make it difficult to perform uniform processing on the sample surface. .
Therefore, an object of the present invention is to provide a plasma processing apparatus capable of performing uniform processing on a processing surface of a sample.
[0008]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, a first invention of the present application is a plasma processing apparatus for performing plasma processing on a sample in a reactor, the microwave processing means being configured to generate microwaves, and being connected to the microwave generating means. A dielectric that is formed in a plate shape along the processing surface of the sample, and makes the electric field intensity distribution of the microwave generated from the microwave generating means substantially uniform along the processing surface of the sample; Processing means for processing the sample using plasma generated in the reactor; and a surface (hereinafter, introduction surface) of the microwave generation means in contact with the dielectric (hereinafter referred to as an introduction surface) is provided from the microwave generation means. A plurality of introduction portions for introducing microwaves to the dielectric are provided, and each of the center positions of the introduction portions is provided on a plurality of axes on the introduction surface extending in the same direction, To provide a plasma processing apparatus in which the dielectric body phases of microwaves are aligned at the position of the shaft.
[0009]
With the above configuration, the phases of the microwaves in the dielectric can be aligned at the center positions of the respective introduction portions on the introduction surface of the microwave generation means. Accordingly, interference such as mutual cancellation of microwaves introduced into the dielectric through the on-axis introduction portion is reduced, and the microwaves are made uniform (hereinafter, “uniform” is referred to as “the direction along the sample processing surface”). "Approximately uniform.") And uniform plasma can be generated.
The second invention of the present application provides a plasma processing apparatus according to the first invention, wherein antinodes and antinodes or nodes of microwaves in the dielectric are located at positions of the respective axes in the first invention.
[0010]
The degree of coupling between the microwaves introduced into the dielectric from the introduction portions on each axis and the microwaves in the dielectric can be increased.
In a third aspect of the present invention, in the first aspect, the dielectric has a rectangular cross section along a processing surface of the sample, and a distance L between the axes is equal to each other. ₁ Provides a plasma processing apparatus that substantially satisfies the following equation (1).
L ₁ = N _L1 (Λ ₁ / 2)… (1)
Where λ ₁ : Wavelength of microwave in the dielectric
n _L1 : Is an integer of 1 or more.
[0011]
By making the cross section of the dielectric material through which the microwave propagates rectangular as described above, the electric field intensity distribution of the microwave becomes substantially uniform as a whole along the processing surface of the sample, and uniform plasma is generated. A uniform thin film can be formed or etched by gas molecules excited and activated by the plasma. Further, even when the process conditions such as the flow rate and the composition ratio of the gas are changed or the process conditions are changed due to maintenance or the like, the microwave electric field intensity distribution is not easily biased because the region where the microwave propagates is rectangular. Therefore, the process margin can be expanded.
[0012]
In a fourth aspect of the present invention, in the third aspect, the dielectric has a rectangular or square cross section along a processing surface of the sample, and the axis is a direction along two opposing sides of the dielectric. And a plasma processing apparatus extending to the plasma processing apparatus.
With the above configuration, the microwave in the dielectric can be made more uniform.
According to a fifth aspect of the present invention, there is provided the plasma processing apparatus according to the fourth aspect, wherein the introduction surface is formed in a rectangular shape or a square shape, and the axis is line-symmetric with respect to a center axis in a side direction of the introduction surface. .
[0013]
According to the above configuration, the degree of coupling between the microwave introduced from the introduction section and the microwave in the dielectric is substantially the same, and the microwave can be easily uniformized.
Also, the width W of the microwave generating means in the direction orthogonal to the axis ₁ But generally L ₁ Is preferably set to be equal to Thus, the width W ₁ By setting, the degree of coupling between the microwave introduced from the introduction section and the microwave in the dielectric can be increased.
A sixth aspect of the present invention provides the plasma processing apparatus according to the fifth aspect, wherein a distance D between the end face of the dielectric and the axis substantially satisfies the following expression (2).
[0014]
D = n _D (1/4) λ ₁ … (2)
Where λ ₁ : Wavelength of microwave in the dielectric
n _D : Is an integer of 1 or more.
According to the above configuration, the coupling portion between the dielectric and the microwave generating means can be set in a reverse relationship to that of the choke, so that a higher coupling degree between the two can be obtained. Therefore, it is easy to make the microwave uniform.
According to a seventh aspect of the present invention, in the first aspect, the dielectric has a rectangular cross section along the sample, and the introduction portions are provided alternately on two axes. The axial distance L between the centers of the introduction portions arranged alternately adjacent to each other. ₃ Provides a plasma processing apparatus that substantially satisfies the following equation (3).
[0015]
L ₃ = N _L3 (Λ ₁ / 2)… (3)
Where λ ₁ : Wavelength of microwave in the dielectric
n _L3 : Is an integer of 1 or more.
According to the above configuration, the phases of the microwaves introduced into the dielectric from the alternate introduction portions on both axes are aligned, and the microwaves are easily made uniform.
An eighth invention of the present application is the plasma processing apparatus according to the third invention, wherein an H-branch waveguide is further provided between the microwave generation means and the dielectric, and the introduction surface is divided into at least two or more. I will provide a.
[0016]
By using the branch waveguide as described above, microwaves can be supplied uniformly even in a large processing apparatus.
The ninth invention of the present application is the ninth invention, wherein the microwaves introduced into the dielectric from each of the introduction surfaces divided into at least two or more are in-phase with each other. Interval L ₄ Provides a plasma processing apparatus that substantially satisfies the following equation (4).
L ₄ = 2n _L4 (Λ ₁ / 2)… (4)
Where λ ₁ : Wavelength of microwave in the dielectric
n _L4 : Is an integer of 1 or more.
[0017]
According to the above configuration, the phases of the microwaves in the dielectric in the respective introduction portions are aligned, so that interference such as mutual cancellation is reduced.
According to a tenth aspect of the present invention, in the eighth aspect, when microwaves introduced into the dielectric from each of the at least two or more divided introduction surfaces are in opposite phases, the introduction portion on the adjacent introduction surface is used. Interval L ₄ Provides a plasma processing apparatus that substantially satisfies the following equation (5).
L ₄ = (2n _L4 +1) (λ ₁ / 2)… (5)
Where λ ₁ : Wavelength of microwave in the dielectric
n _L4 : Is an integer of 1 or more.
[0018]
The same effects as those of the ninth aspect can be obtained.
An eleventh invention of the present application is the plasma processing apparatus according to the third invention, wherein an E-branch waveguide is further provided between the microwave generation means and the dielectric, and the introduction surface is divided into at least two or more. I will provide a.
The same effects as those of the eighth aspect are exerted.
In a twelfth aspect of the present invention, in the eleventh aspect, when microwaves introduced into the dielectric from each of the at least two divided introduction surfaces have the same phase, the microwave is introduced into the adjacent introduction surface at the introduction portion. Interval L ₄ Provides a plasma processing apparatus that substantially satisfies the following equation (4).
[0019]
L ₄ = (2n _L4 +1) (λ ₁ / 2)… (6)
Where λ ₁ : Wavelength of microwave in the dielectric
n _L4 : Is an integer of 1 or more.
The same effects as those of the ninth aspect can be obtained.
A thirteenth invention of the present application is the eleventh invention, wherein the microwaves introduced into the dielectric from each of the at least two or more divided introduction surfaces are in opposite phases, and the introduction portion on the adjacent introduction surface is provided. Interval L ₄ Provides a plasma processing apparatus that substantially satisfies the following equation (7).
[0020]
L ₄ = 2n _L4 (Λ ₁ / 2)… (7)
Where λ ₁ : Wavelength of microwave in the dielectric
n _L4 : Is an integer of 1 or more.
The same effects as those of the ninth aspect can be obtained.
[0021]
BEST MODE FOR CARRYING OUT THE INVENTION
<Plasma processing equipment>
The plasma processing apparatus has a microwave generator, a processing chamber, and a microwave propagation region above the processing chamber, and performs processing as described below.
Microwaves generated by the microwave generator propagate in the microwave propagation region, and an electric field is formed in the processing chamber in a gas atmosphere. Plasma is generated by the electric field and the gas, and processing such as film formation, etching, and gas-phase cleaning is performed on a sample in the processing chamber by the chemical species generated by the plasma.
[0022]
Examples of such a plasma processing apparatus using plasma include an apparatus that performs oxidation and nitridation using plasma (hereinafter, referred to as a plasma oxynitriding apparatus), a plasma CVD (Chemical Vapor Deposition) apparatus, a plasma etching apparatus, a plasma ashing apparatus, and a plasma cleaning apparatus. Equipment, plasma annealing equipment and the like.
Hereinafter, a plasma oxynitriding apparatus will be described as an example of the plasma processing apparatus of the present invention.
<First Embodiment>
1 is an external view of a plasma oxynitriding apparatus according to the first embodiment, FIG. 2 is a cross-sectional view of the apparatus of FIG. 1 in a direction including a line AA ′ of FIG. FIG. 3 is an explanatory diagram showing the relationship between the rectangular waveguide 2 and the wavelength of the microwave in the circular dielectric 7 in the cross section of FIG. 2.
[0023]
The plasma oxynitriding apparatus according to the first embodiment includes a microwave generator 1, a rectangular waveguide 2 provided with two branches 2a and 2b, and a chamber 4. The chamber 4 is provided with a gas inlet 5 for introducing a gas such as a film forming gas and a gas outlet 6 for discharging the gas. The chamber 4 has a cylindrical chamber lid (hereinafter, circular chamber lid) 4a and a cylindrical processing chamber (hereinafter, circular processing chamber) 4b. In the circular processing chamber 4b, a sample stage 11 for processing the sample 12 is provided at a position facing the circular chamber lid 4a. On the side surface of the circular processing chamber 4b, a gas introduction unit 10 for supplying a gas such as a film forming gas from the gas inlet 5 to the circular processing chamber 4b is provided. On the other hand, the circular chamber lid 4a is provided with a dielectric (hereinafter, circular dielectric) 7 having a circular cross section along the processing surface of the sample 12 so as to cover the upper part of the circular processing chamber 4b. A rectangular waveguide 2 and a microwave generator 1 connected to the rectangular waveguide 2 are provided on the chamber 4.
[0024]
Here, the relationship between the positions of the branches 2a and 2b and the wavelength of the microwave in the circular dielectric 7 is set as follows.
As shown in FIG. 3, the interval between the axis A1 and the axis A2 is set such that the phases of the microwaves of the circular dielectric 7 at the respective positions of the axis A1 and the axis A2 where the centers of the branches 2a and 2b are located are aligned. Alternatively, the material of the circular dielectric 7 is selected. When the antinodes and antinodes or the nodes of microwaves in the circular dielectric 7 are set at the positions of the axes A1 and A2, the branches 2a and 2b located on the respective axes A1 and A2 This is preferable because the degree of coupling between the microwave introduced into the circular dielectric 7 and the microwave in the circular dielectric 7 can be further increased. By setting the positions of the axes A1 and A2 in this manner, the phases of the microwaves in the circular dielectric 7 at the respective positions of the branches 2a and 2b shown in FIG. 3 can be made uniform. Accordingly, interference such as microwaves introduced from the branches 2a and 2b located on both axes into the circular dielectric 7 cancel each other is reduced, and the microwaves are made substantially uniform in a direction along the processing surface of the sample 12. be able to. (Hereinafter, a microwave having a substantially uniform electric field intensity distribution is referred to as a uniform microwave. In the following, “uniform” refers to “substantially uniform along a processing surface of the sample 12”). Therefore, uniform plasma is generated by the uniform microwave, and a uniform thin film can be formed by gas molecules excited and activated by the plasma.
[0025]
Instead of the rectangular waveguide 3, another antenna such as a slot antenna may be provided.
Further, as the dielectric, a substance having a small dielectric loss such as quartz, fluororesin, polyethylene, and polystyrene is preferable. The dielectric includes a case where the relative dielectric constants of vacuum, air, and gas are “1”. Also, a case where at least a part of the surface of the dielectric is covered with a conductor is included. In this plasma oxynitriding apparatus, for example, a film forming process is performed as follows.
[0026]
First, the inside of the circular processing chamber 4b is evacuated from the gas discharge port 6 to a predetermined degree of vacuum, and gas is introduced into the circular processing chamber 4b through the gas inlet 5 and the gas inlet 10. Next, the microwave generated by the microwave generator 1 is introduced into the circular dielectric 7 from the branches 2a and 2b of the rectangular waveguide 2, and the electric field intensity distribution is made uniform. The microwave is introduced into the circular processing chamber 4b to generate plasma. The generated plasma excites and activates gas molecules to generate chemical species, and forms a thin film on the surface of the sample 12.
[0027]
In the above description, the circular dielectric 7 is used as the dielectric. However, if a dielectric having a rectangular cross section along the processing surface of the sample 12 is used, the microwave reflected on the wall surface perpendicular to the direction in which the microwave travels can be used. Thus, the electric field intensity distribution becomes uniform as a whole without being biased toward the center of the processing chamber. Plasma is generated uniformly by the uniform microwave, and a uniform thin film can be formed. In addition, even if process conditions such as gas flow rates and composition ratios change or process conditions change due to maintenance, etc., the microwave propagation region is rectangular, so that the microwave electric field intensity distribution is less likely to be biased. Process margins such as the flow rate and composition ratio can be increased.
[0028]
Further, the material of the circular dielectric 7 is selected such that the phase relationship between the microwaves in the rectangular waveguide 2 and the microwaves in the circular dielectric 7 substantially match. Note that the shape or structure of the rectangular waveguide 2 can be changed so that the phase relations are aligned.
Further, if the antinodes of the microwaves in the rectangular waveguide 2 and the microwaves in the circular dielectric 7 are set to coincide with each other, or the positions of the nodes coincide with each other, the positions in the rectangular waveguide 2 and the circular dielectric 7 may be reduced. This is preferable because microwaves can be prevented from interfering with each other. With this setting, the microwaves in the rectangular waveguide 2 and the circular dielectric 7 can simultaneously satisfy the standing wave condition. Therefore, it is possible to reduce the possibility that the microwaves propagating in the respective propagation regions interfere with each other and disturb the standing wave condition. Therefore, a uniform microwave distribution can be formed while suppressing the attenuation of the microwave, and a uniform thin film can be generated by a uniform plasma.
[0029]
In the present embodiment, the case where the rectangular waveguide 2 is branched into two is described as an example, but it may be branched into two or more. When the rectangular waveguide 2 is branched into two or more, for example, the distances between the axes A1, A2, A3,... Where the centers of the branches 2a, 2b, 2c. Set to. The distance between the axis A1 and the axis A2, the distance between the axis A2 and the axis A3, the distance between the axis A1 and the axis A3, etc., are set to substantially satisfy an integral multiple of a half wavelength of the microwave in the circular dielectric 7. Set to.
<First embodiment>
The plasma oxynitriding apparatus according to the first embodiment will be described more specifically with reference to FIGS. FIG. 4 is an external view of the plasma oxynitriding apparatus of the first embodiment, FIG. 5 is a cross-sectional view of the apparatus of FIG. 4 including BB ′ of FIG. 4 and is perpendicular to the X axis in FIG. 4, and FIG. FIG. 7 is an exploded perspective view of a main part of the oxynitriding apparatus, FIG. 7 is a slot shape of the H-plane slot antenna, and FIG. 8A is a view showing the position of the slot 30d on the bottom surface 30c of the H-plane slot antenna 30 of the plasma oxynitriding apparatus of FIG. FIG. 8B is an explanatory diagram showing the relationship between the microwaves in the H-plane slot antenna 30 and the wavelength of the microwave. FIG. FIGS. 9A and 9B are explanatory diagrams showing the relationship between the microwaves in the body 15 and the wavelengths thereof, and FIGS. As shown in FIG. 4, 6, or 7, in the cross section of the rectangular dielectric 15 along the processing surface of the sample 12, the same directions as two pairs of opposed parallel sides are defined as an X direction and a Y direction, A direction perpendicular to the X and Y directions is defined as a Z direction.
[0030]
As shown in FIG. 4, the plasma oxynitriding apparatus according to the present embodiment has a rectangular waveguide (hereinafter, rectangular chamber) 25 having a rectangular cross section along the processing surface of the rectangular waveguide 20, the H-plane slot antenna 30, and the sample 12. have. The rectangular chamber 25 has a rectangular or square cross section along the processing surface of the sample 12 (hereinafter, rectangular processing chamber) 25b and a cross section along the processing surface of the sample 12 covering the rectangular processing chamber 25b. A rectangular or square chamber lid (hereinafter, rectangular chamber lid) 25a is provided.
[0031]
As shown in FIGS. 5 and 6, the rectangular chamber lid 25a has a dielectric (hereinafter, rectangular dielectric) 15 whose cross section along the processing surface of the sample 12 is rectangular or square. As shown in FIG. 6, an H-plane slot antenna 30 having a rectangular or square cross section along the processing surface of the sample 12 is formed on the rectangular dielectric 15 by two opposing sides of the rectangular dielectric 15 and the H-plane slot. The antenna 30 is placed so that two opposing sides of the antenna 30 are in the same direction. Microwaves are introduced from the rectangular waveguide 20 to the rectangular dielectric 15 by the H-plane slot antenna 30. As shown in FIGS. 5 and 7, the H-plane slot antenna 30 has an upper portion 30a, a side portion 30b, and a bottom portion 30c. A rectangular slot 30d is formed on the bottom 30c, that is, on the H-plane of the H-plane slot antenna 30, along the Y-direction of the H-plane slot antenna 30, as shown in FIG. The rectangular waveguide 20 is mounted above the H-plane slot antenna 30. The configuration of the gas inlet 5 and the gas outlet 6 is the same as in the first embodiment.
[0032]
In the plasma oxynitriding apparatus according to the present embodiment, the relationship between the arrangement position of the slot 30d and the wavelength of the microwave between the H-plane slot antenna 30 and the rectangular dielectric 15 is set. First, the arrangement position of the slot 30d will be described.
[Position of slot of H-plane slot antenna]
First, as shown in FIG. 8A, rectangular slots 30d are provided alternately on axes A1 and A2 extending in the Y direction of the bottom 30c. Here, the distance L between the axis A1 and the axis A2 shown in FIG. ₁ Is set to substantially satisfy the following expression (8).
[0033]
L ₁ = N _L1 (Λ _Fifteen / 2)… (8)
Where λ _Fifteen Is the wavelength of the microwave in the rectangular dielectric 15, n _L1 Is an integer of 1 or more. Thus, the distance L between the axis A1 and the axis A2 ₁ As shown in FIG. 8B, the phase relationship of the microwaves in the rectangular dielectric 15 in the X direction of the bottom 30c is aligned at the positions of the slots 30d of the axes A1 and A2, as shown in FIG. Can be. Therefore, interference such as cancellation of microwaves introduced into the rectangular dielectric 15 from the slots 30d on both axes is reduced, and a low-loss and uniform microwave distribution can be obtained.
[0034]
Also, the length L of the slot 30d in the Y direction ₂ And / or distance L of the center position in the Y direction of slots 30d arranged alternately and adjacently on axes A1 and A2. ₃ Is preferably set to substantially satisfy the following expressions (9) and (10).
L ₂ = N _L2 (Λ ₃₀ / 2)… (9)
L ₃ = N _L3 (Λ ₃₀ / 2)… (10)
Where λ ₃₀ Is the wavelength of the microwave in the H-plane slot antenna 30, n _L2 , N _L3 Is an integer of 1 or more. With this setting, L ₂ Is the resonance length of the microwave in the H-plane slot antenna 30, and the degree of coupling between the microwave introduced into the rectangular dielectric 15 from the H-plane slot antenna and the microwave in the rectangular dielectric 15 can be increased. Also L ₃ Is set as described above, the phases and coupling degrees of the microwaves introduced into the rectangular dielectric 15 from the alternate slots 30d on both axes can be made uniform.
[0035]
Further, as shown in FIG. 8A, it is preferable that the center position of the slot 30d and the position of the antinode of the microwave propagating in the Y direction in the H-plane slot antenna coincide with each other because the degree of coupling becomes higher. .
Further, it is preferable that the axes A1 and A2 are set so as to be line-symmetric with respect to the center axis in the Y direction of the H-plane slot antenna 30, and the slot 30d is arranged on the axes. By arranging the slots 30d in this way, the degree of coupling between the microwaves introduced from the slots 30d and the microwaves in the rectangular dielectric 15 becomes substantially equal, and the microwaves can be easily made uniform.
[0036]
Also, the width W in the X direction of the H-plane slot antenna 30 ₁ Is preferably set to substantially satisfy the following expression (11).
[0037]
(Equation 1)

Thus, the width W ₁ Is set, the degree of coupling between the microwave introduced from the slot 30d and the microwave in the rectangular dielectric 15 can be increased.
Second, the distance D between the end face of the rectangular dielectric 15 along the Y direction and the axes A1 and A2 is substantially equal to D = n. _D (1/4) λ _Fifteen The axes A1 and A2 are set so as to satisfy the condition, and the slot 30d is arranged on the axes. Where λ _Fifteen Is the wavelength of the microwave in the rectangular dielectric 15, n _D Is an integer of 1 or more. By setting the distance D in this manner, the degree of coupling between the microwave introduced from the slot 30d and the microwave in the rectangular dielectric 15 can be increased, and conversely, abnormal discharge can be suppressed. That is, for example, the coupling portion between the rectangular dielectric 15 and the H-plane slot antenna 30 can have a reverse relationship to the choke, so that a higher coupling degree between the two can be obtained. Therefore, it is easy to make the microwave uniform. The degree of the degree of coupling is, for example, n when increasing the degree of coupling. _D If an odd number is selected as the _D As an even number.
[Relationship of microwave wavelength]
Next, the wavelength λ of the microwave in the H-plane slot antenna 30 ₃₀ And the wavelength λ of the microwave in the rectangular dielectric 15 _Fifteen Will be described.
[0038]
When the microwaves introduced into the rectangular dielectric 15 from each of the axis A1 and the axis A2 are in phase, the following equation (12) is satisfied, and when the microwaves are out of phase, the equation (13) is satisfied. .
λ ₃₀ / 2 = 2m (1/2) λ _Fifteen … (12)
λ ₃₀ / 2 = (2m + 1) (1/2) λ _Fifteen … (13)
Here, m is an integer of 1 or more. The shape or structure of the H-plane slot antenna can be changed so as to satisfy the relationship of the above equation (12) or (13). With this setting, the microwaves in the H-plane slot antenna 30 and the rectangular dielectric 15 have the same phase position, and the standing wave condition can be satisfied at the same time. Therefore, it is possible to reduce the possibility that the microwaves propagating in the respective propagation regions interfere with each other and disturb the standing wave condition. Therefore, it is easy to generate a uniform microwave by suppressing the attenuation of the microwave, and a uniform thin film can be generated by a uniform plasma.
[0039]
In the above description, only the single H-plane slot antenna 30 is used, but a rectangular waveguide may be branched and connected to a plurality of H-plane slot antennas 30 to introduce microwaves into the rectangular dielectric 15. . By branching, microwaves can be supplied uniformly even in a large processing apparatus. As a branching method, for example, in the case of branching into two, an H-branch in which the phase states of the microwaves inside the two H-plane slot antennas 30 are in phase or an E-branch in which the phase states are in opposite phases are used. be able to.
FIGS. 9 (a) and 9 (b) show the case where microwaves are introduced into the rectangular dielectric 15 via two H-plane slot antennas 30 after branching the rectangular waveguide 2 into H branches or E branches. 4 shows the arrangement position of the slot 30 d in the bottom 30 c of the plane slot antenna 30 and the microwave waveform in the Y direction in the H plane slot antenna 30. The arrangement method of the slots 30d located on the axes A1 and A2 in the H-plane slot antenna 30 in FIG. 9 is the same as that in FIG.
[0040]
FIG. 9A is a plan view of two identical H-plane slot antennas 30 in which the slots 30d are arranged at the same position, and FIG. 9B shows two identical H-plane slot antennas in which the slots 30d are arranged line-symmetrically in the Y direction. FIG. 2 is a plan view of an H-plane slot antenna 30. Here, as shown in FIG. 9A, the case where the arrangement positions of the slots 30d in the two H-plane slot antennas 30 are the same is referred to as “in-phase arrangement position”, and is line-symmetrical as shown in FIG. 9B. The case where the positions are symmetrical to each other is referred to as “opposite phase position”. Further, as shown in FIG. 9, the distance in the X direction between the slots 30d of the adjacent H-plane slot antenna 30 is L. ₄ And 9 (a) and 9 (b), the waveform on the left side in the figure shows the microwave in the left H-plane slot antenna 30, and the waveform on the right side in the figure shows the H-plane slot on the right side after the H branch and the E branch, respectively. 3 shows a microwave in the antenna 30.
[0041]
Table 1 below shows the distance L when the H-branch or the E-branch is combined with the in-phase arrangement position or the opposite-phase arrangement position. ₄ Shows the relationship. Here, the interval L ₄ Are set such that the phases of the microwaves in the rectangular dielectric 15 at the center position of each slot 30d of the two H-plane slot antennas 30 are aligned.
[0042]
[Table 1]

As described above, the interval L ₄ Is set, the phases of the microwaves introduced from the slot 30d to the rectangular dielectric 15 are aligned, so that interference such as mutual cancellation is reduced.
Further, in order to reduce the interference of microwaves in the H-plane slot antenna 30, it is preferable that the shape is such that it can operate in a single mode. For example, the length L in the Y direction of the H-plane slot antenna 30 operable in the single mode _Y Is obtained from the following equation (14).
[0043]
(Equation 2)

Where λ ₃₀ Is the wavelength of the microwave in the H-plane slot antenna 30, and λ is the free space wavelength.
Instead of the H-plane slot antenna, an E-plane slot antenna, a circular waveguide, a coaxial waveguide, a coupling element other than the slot, or the like can be used.
In the plasma oxynitriding apparatus according to the present embodiment, the thin film can be uniformly formed by setting the arrangement position of the slot 30d and the wavelength of the microwave between the H-plane slot antenna 30 and the rectangular dielectric 15 as described above. Can be formed. Furthermore, in this embodiment, since the cross section along the processing surface of the sample 12, such as the rectangular dielectric 15, the rectangular processing chamber 25b, and the rectangular waveguide 20, is rectangular, the microwave electric field intensity distribution is not easily biased and the gas Process margins such as the flow rate and composition ratio can be increased.
[0044]
However, the rectangular processing chamber 25b is not an area where microwaves normally propagate because microwaves are absorbed by plasma generated therein. Therefore, the cross section of the rectangular processing chamber 25b in the direction along the processing surface of the sample 12 does not necessarily have to be rectangular. However, since the microwaves may propagate in the rectangular processing chamber 25b without being completely absorbed, the microwaves may travel along the sample 12 processing surface of the rectangular processing chamber 25b so that the uniformity of the plasma is not disturbed by the non-uniform microwaves. Preferably, the cross section is rectangular. By doing so, the uniformity of plasma can be further enhanced, a more uniform thin film can be formed, and the process margin for obtaining uniform plasma can be expanded.
[0045]
In the above description, the shapes of the H-plane slot antenna 30, the rectangular dielectric 15, the rectangular processing chamber 25b, the rectangular chamber lid 25a, and the like may be formed in a rectangular shape other than a rectangular shape or a square shape. Note that it is more preferable that the two sets of two opposing sides are formed in a parallel rectangular shape, because the microwave is less deflected.
<Second embodiment>
Hereinafter, the plasma oxynitriding apparatus according to the first embodiment will be described in more detail with reference to a second embodiment. The plasma oxynitriding apparatus according to the second embodiment has the same configuration as that of the first embodiment except for the rectangular antenna dielectric, rectangular slot plate 36 and rectangular sealing dielectric 38 described below.
[0046]
The appearance of the plasma oxynitriding apparatus according to the second embodiment is similar to that of FIG. FIG. 10 is a cross-sectional view perpendicular to the X-axis in FIG. 4 including BB ′, and FIG. 11 is an exploded perspective view of a main part of the plasma oxynitriding apparatus of FIG.
As shown in FIGS. 10 and 11, the rectangular chamber lid 25a is provided with a dielectric (hereinafter, rectangular antenna dielectric) 34 and a slot 36a each having a rectangular cross section along the processing surface of the sample 12 in order from the top. A rectangular slot plate (hereinafter, rectangular slot plate) 36 having a rectangular cross section along the processing surface of the sample 12 and a rectangular sealing dielectric (hereinafter, rectangular sealing dielectric) 38 having a rectangular cross section along the processing surface of the sample 12. have.
[0047]
Hereinafter, each part of the plasma oxynitriding apparatus according to the present embodiment will be described in detail.
[Rectangular antenna dielectric]
The rectangular antenna dielectric 34 formed in a rectangular shape makes the microwave electric field intensity distribution uniform. The rectangular antenna dielectric 34 is separated from the microwave in the rectangular antenna dielectric 34 and the microwave reflected by the plasma in the rectangular processing chamber 25b by the rectangular slot plate 36 provided between the rectangular processing chamber 25b. The binding of has been suppressed. Therefore, the microwave propagating in the rectangular antenna dielectric 34 is hardly affected by the plasma, and the electric field intensity distribution of the microwave is easily uniformized.
[Rectangular sealing dielectric]
The rectangular sealing dielectric 38 is formed in a rectangular shape, and maintains or further enhances the uniformity of the electric field intensity distribution of the microwave introduced from the rectangular slot plate 36, and reduces the rectangular shape below the rectangular sealing dielectric 38. An electric field for generating plasma is formed in the processing chamber 25b. In addition, the rectangular sealing dielectric 38 isolates the vacuum processing chamber 25b from the atmosphere and keeps it in a clean space.
[Rectangular slot plate]
The rectangular slot plate 36 maintains or further enhances the uniformity of the electric field intensity distribution of the microwave introduced from the rectangular antenna dielectric 34 while keeping the slot 36a. Further, the influence of the plasma generated in the rectangular processing chamber 25b is suppressed from affecting the rectangular antenna dielectric. The rectangular slot plate 36 does not necessarily need to have a rectangular cross section along the processing surface of the sample 12, and may have a shape that covers the rectangular antenna dielectric 34, the rectangular sealing dielectric 38, and the rectangular processing chamber 25b. It may be circular.
[0048]
As described above, the rectangular antenna dielectric 34, the rectangular slot plate 36, and the rectangular sealing dielectric 38 further uniform the electric field intensity distribution of the microwave in the rectangular sealing dielectric 38.
[Other Embodiment Examples]
(A) The present invention is applicable to compounds other than the silicon process, FPD (Flat Panel Display) processes, and the like. Further, the present invention can be applied to a microwave irradiation device or a microwave heating device that does not use plasma.
(B) The above embodiments can be used in combination as needed.
[0049]
【The invention's effect】
According to the present invention, it is possible to provide a plasma processing apparatus capable of performing uniform processing on a processing surface of a sample.
[Brief description of the drawings]
FIG. 1 is an external view of a plasma oxynitriding apparatus according to a first embodiment.
FIG. 2 is a cross-sectional view of the apparatus of FIG. 1 in a direction perpendicular to a processing surface of a sample including AA ′.
FIG. 3 is an explanatory diagram showing a relationship between a rectangular waveguide 2 and a wavelength of a microwave in a circular dielectric 7 in the cross section of FIG. 2;
FIG. 4 is an external view of a plasma oxynitriding apparatus according to the first embodiment.
FIG. 5 is a cross-sectional view of the device of FIG. 4 perpendicular to the X-axis in the drawing including BB ′ of FIG. 4;
6 is an exploded perspective view of a main part of the plasma oxynitriding apparatus shown in FIG.
FIG. 7 shows a slot shape of an H-plane slot antenna.
8A is an explanatory diagram showing the relationship between the position of a slot 30d of the plasma oxynitriding apparatus of FIG. 4 and the wavelength of a microwave in the H-plane slot antenna 30. FIG.
FIG. 5B is an explanatory diagram showing the relationship between the microwaves in the H-plane slot antenna 30 and the rectangular antenna dielectric 34 in a cross section perpendicular to the Y direction of the plasma oxynitriding apparatus of FIG. 4.
FIG. 9A is a layout diagram of slots 30d in two H-plane slot antennas (1).
(B) Arrangement diagram of slot 30d in two H-plane slot antennas (2).
FIG. 10 is a cross-sectional view including a line BB ′ in FIG. 4 and is perpendicular to the X-axis.
FIG. 11 is an exploded perspective view of a main part of the plasma oxynitriding apparatus of FIG.
[Explanation of symbols]
1 Microwave generator
2,20 rectangular waveguide
2a, 2b branch
3 Coaxial antenna
4 chambers
4a Round chamber lid
4b Round processing room
7 circular dielectric
12 samples
15 Rectangular dielectric
25 rectangular chamber
25a rectangular chamber lid
25b Rectangular processing room
30 H-plane slot antenna
34 Rectangular antenna dielectric
38 Rectangular sealing dielectric
36 rectangular slot plate

Claims (13)

A plasma processing apparatus for performing plasma processing on a sample in a reactor,
Microwave generating means for generating microwaves,
It is connected to the microwave generation means, is formed in a plate shape along the processing surface of the sample, and makes the electric field intensity distribution of the microwave generated from the microwave generation means substantially uniform along the processing surface of the sample. A dielectric,
Processing means for processing the sample using plasma generated in the reactor by the microwave,
A plurality of introduction sections for introducing microwaves from the microwave generation section to the dielectric are provided on a surface of the microwave generation section that is in contact with the dielectric (hereinafter, introduction plane). The plasma processing apparatus, wherein each of the center positions is provided on a plurality of axes on the introduction surface extending in the same direction, and the phases of the microwaves in the dielectric are aligned at the positions of the respective axes. The plasma processing apparatus according to claim 1, wherein antinodes or antinodes or nodes of microwaves in the dielectric are located at the positions of the axes. 2. The plasma according to claim 1, wherein the dielectric has a rectangular cross section along a processing surface of the sample, and a distance L ₁ between the axes substantially satisfies the following expression (1). processor _{L 1 = n L1 (λ 1} /2) ... (1)
Here, λ ₁ : wavelength n _L1 of microwave in the dielectric material: an integer of 1 or more. The plasma according to claim 3, wherein the dielectric has a rectangular or square cross section along a processing surface of the sample, and the axis extends in a direction along two opposing sides of the dielectric. Processing equipment. The plasma processing apparatus according to claim 4, wherein the introduction surface is formed in a rectangular shape or a square shape, and the axis is line-symmetric with respect to a central axis in a side direction of the introduction surface. The distance D of the dielectric end face of said shaft, substantially satisfy the following formula (2), the plasma processing apparatus D = n D _(1/4) according to claim 5 lambda ₁ ... (2)
Here, λ ₁ : wavelength n _D of the microwave in the dielectric material: an integer of 1 or more. The dielectric has a rectangular cross section along the sample, and the introduction portions are provided alternately on two axes, and the introduction portions are alternately arranged on the two axes. The plasma processing apparatus L ₃ = n _L3 (λ _1/2 ) according to claim 1, wherein the axial distance L ₃ between the centers substantially satisfies the following equation (3).
Here, λ ₁ : wavelength n _L3 of microwave in the dielectric material: an integer of 1 or more. The plasma processing apparatus according to claim 3, wherein an H-branch waveguide is further provided between the microwave generation unit and the dielectric, and the introduction surface is divided into at least two or more. From each of the inlet surface being divided into at least two microwave are in phase introduced into the dielectric spacing L ₄ of the inlet portion in the inlet surface adjacent substantially following formula (4 9. The plasma processing apparatus L ₄ = 2n _L4 (λ _1/2 ) according to claim 8, which satisfies (4).
Here, λ ₁ : wavelength n _L4 of microwave in the dielectric material: an integer of 1 or more. When microwaves introduced into the dielectric from each of said introducing surface is divided into at least two or more reverse-phase spacing L ₄ of the inlet portion in the inlet surface adjacent the substantially formula ( The plasma processing apparatus L ₄ = (2n _L4 +1) (λ _1/2 ) according to claim 8, which satisfies 5).
Here, λ ₁ : wavelength n _L4 of microwave in the dielectric material: an integer of 1 or more. 4. The plasma processing apparatus according to claim 3, wherein an E-branch waveguide is further provided between the microwave generation unit and the dielectric, and the introduction surface is divided into at least two or more. From each of the inlet surface being divided into at least two microwave are in phase introduced into the dielectric spacing L ₄ of the inlet portion in the inlet surface adjacent substantially following formula (4 The plasma processing apparatus L ₄ = (2n _L4 +1) (λ _1/2 ) according to claim 11, satisfying (6).
Here, λ ₁ : wavelength n _L4 of microwave in the dielectric material: an integer of 1 or more. When microwaves introduced into the dielectric from each of said introducing surface is divided into at least two or more reverse-phase spacing L ₄ of the inlet portion in the inlet surface adjacent the substantially formula ( The plasma processing apparatus L ₄ = 2n _L4 (λ _1/2 ) according to claim 11, which satisfies 7).
Here, λ ₁ : wavelength n _L4 of microwave in the dielectric material: an integer of 1 or more.

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