JP2004233373A - Magnetic detecting element - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To stably form a final protective film of a giant magnetoresistive element, used for a magnetic detecting element and to improve the reliability of the magnetic detecting element. <P>SOLUTION: In the magnetic detecting element, the side of a resistive pattern, constituting the giant magnetoresistive element 7, is tapered so that it forms an angle of not smaller than 20° and not larger than 80°, with respect to the surface of a substrate for supporting the giant magnetoresistive element. In addition, the side of the resistive pattern, constituting the giant magnetoresistive element, is tapered so that it forms an angle not smaller than 40° and not larger than 65°, with respect to the surface of the substrate supporting the giant magnetoresistive element. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a magnetic detection element that detects a change in a magnetic field.

In general, a magnetoresistive element (hereinafter, referred to as MR (Magnetoresistance) element) is an element whose resistance value changes depending on an angle between a magnetization direction and a current direction of a ferromagnetic (eg, Ni—Fe, Ni—Co) thin film. is there.
In such an MR element, the resistance value becomes minimum when the current direction and the magnetization direction intersect at right angles, and when the angle between the current direction and the magnetization direction is 0 degree, that is, when the direction is the same or completely opposite, the resistance becomes smaller. The value is maximized. Such a change in the resistance value is called an MR change rate, which is generally 2 to 3% for Ni-Fe and 5 to 6% for Ni-Co.

9 and 10 are a side view and a perspective view showing the configuration of a conventional magnetic detection device.
As shown in FIG. 9, the conventional magnetic detection device has a rotating shaft 41 and at least one or more irregularities on the outer peripheral side, and a disk-shaped magnetic rotating body that rotates in synchronization with the rotation of the rotating shaft 41. 42, an MR element 43 arranged at a predetermined gap from the outer peripheral side of the magnetic rotator 42, a magnet 44 fixed to the back of the MR element 43, and applying a magnetic field to the MR element 43; The MR element 43 includes a magnetoresistive pattern 46 and a thin film surface (magnetically sensitive surface) 47.
In such a magnetic detection device, when the magnetic rotator 42 rotates, the magnetic field penetrating the thin film surface 47 that is the magneto-sensitive surface of the MR element 43 changes, and the resistance value of the magnetoresistive pattern 46 changes.
However, since the output level of the MR element 43 of the magnetic detection element used in such a magnetic detection device is small, high-precision detection cannot be performed. To solve this, a giant magnetoresistive element having a large output level is used. A magnetic detection element using a GMR (Giant Magnetoresistance) element has been recently proposed.

FIG. 11 is a diagram showing characteristics of a conventional GMR element.
A GMR element having the characteristics shown in FIG. 11 is disclosed in Journal of the Japan Society of Applied Magnetics, Vol. 15, No. No. 5,1991, pages 813 to 821, entitled "Magnetoresistance effect of artificial lattice", a so-called artificial lattice in which magnetic layers and nonmagnetic layers each having a thickness of several angstroms to several tens angstroms are alternately laminated. It is a laminate (Fe / Cr, Permalloy / Cu / Co / Cu, Co / Cu, FeCo / Cu) as a film. This laminated body has a remarkably large MR effect (MR change rate) as compared with the above-described MR element, and has the same change in resistance value regardless of the direction of the external magnetic field at any angle with respect to the current. It is an element obtained.
To detect a change in the magnetic field, a GMR element is used to form a substantially magneto-sensitive surface, electrodes are formed at each end of the magneto-sensitive surface to form a bridge circuit, and a bridge circuit is formed between two opposing electrodes of the bridge circuit. It is conceivable to connect a constant-voltage and constant-current power supply to the GMR element, convert a change in the resistance value of the GMR element into a voltage change, and detect a change in the magnetic field acting on the GMR element.

FIG. 12 and FIG. 13 are a side view and a perspective view showing a configuration of a magnetic detection device using a conventional GMR element.
12 and 13, this magnetic detection device has a rotating shaft 41 and at least one or more irregularities on its outer periphery, and has a disk shape as a magnetic field change imparting means that rotates in synchronization with the rotation of the rotating shaft 41. , A GMR element 48 disposed at a predetermined gap from the outer periphery of the magnetic rotator 42, a magnet 44 as a magnetic field generating means for applying a magnetic field to the GMR element 48, and an output of the GMR element 48. The GMR element 48 includes a magnetoresistive pattern 49 as a magneto-sensitive pattern and a thin film surface 50.
In such a magnetic detection device, when the magnetic rotator 42 rotates, the magnetic field penetrating the thin film surface (magnetically sensitive surface) 50 of the GMR element 48 changes, and the resistance value of the magnetoresistive pattern 49 changes.

FIG. 14 is a block diagram showing a conventional magnetic detection device using a GMR element, and FIG. 15 is a block diagram showing details of a conventional magnetic detection device using a GMR element.
The magnetic detection device shown in FIGS. 14 and 15 is arranged with a predetermined gap from the magnetic rotator 42 and uses a GMR element 48 to which a magnetic field is applied by a magnet 44, and a Wheatstone bridge circuit 51, and an output of the Wheatstone bridge circuit 51. , An output of the differential amplifier 52 is compared with a reference value to output a signal of “0” or “1”, and an output of the comparator 53 is received. And an output circuit 54 that performs switching.

FIG. 16 is a diagram showing an example of a circuit configuration of a magnetic detection device using a conventional GMR element.
In FIG. 16, a Wheatstone bridge circuit 51 has, for example, GMR elements 48a, 48b, 48c and 48d on each side. The GMR elements 48a and 48c are connected to a power supply terminal VCC, and the GMR elements 48b and 48d Are grounded, the other ends of the GMR elements 48a and 48b are connected to a connection point 55, and the other ends of the GMR elements 48c and 48d are connected to a connection point 56.

A connection point 55 of the Wheatstone bridge circuit 51 is connected via a resistor 57 to an inverting input terminal of an amplifier 59 of a differential amplifier circuit 58, and a connection point 56 is connected via a resistor 60 to a non-inverting input terminal of the amplifier 59. At the same time, it is further connected via a resistor 61 to a voltage dividing circuit 62 forming a reference voltage based on a voltage supplied from a power supply terminal VCC.
The output terminal of the amplifier 59 is connected to its own inverting input terminal via a resistor 63 and connected to the inverting input terminal of the amplifier 65 of the comparison circuit 64. The non-inverting input terminal of the amplifier 65 is connected to a power supply terminal. It is connected to a voltage dividing circuit 66 that forms a reference voltage based on a voltage supplied from VCC, and is connected to an output terminal of an amplifier 65 via a resistor 67.
The output terminal of the comparison circuit 64 is connected to the base of the transistor 69 of the output circuit 68, and the collector of the transistor 69 is connected to the output terminal 70 of the output circuit 68 and connected to the power supply terminal VCC via the resistor 71. And its emitter is grounded.

FIG. 17 is a diagram showing a configuration of a conventional magnetic detecting element, and FIG. 18 is a characteristic diagram showing an operation of the conventional magnetic detecting element.
As shown in FIG. 17, the Wheatstone bridge includes a GMR element 48 (constituted from 48a to 48d).
When the magnetic rotator 42 rotates, the magnetic field supplied to the GMR elements 48 (48a to 48d) changes as shown in FIG. 18, and the output terminal of the differential amplifier circuit 58 has a magnetic field as shown in FIG. An output corresponding to the unevenness of the rotating body 42 is obtained.
The output of the differential amplifying circuit 58 is supplied to a comparing circuit 64, which compares the output with a reference value, which is the comparison level, to convert it to a signal of "0" or "1". The waveform is shaped. As a result, as shown in FIG. 18, the output terminal 70 has an output of "0" or "1" having a sharp rise and fall.
Journal of the Japan Society of Applied Magnetics Vol. 15, No. 51991, pages 813 to 821, “Magnetoresistance effect of artificial lattice”

  However, in the GMR element used for the above-described magnetic sensing element, an element pattern is transferred to a resist by photolithography on a protective film formed on the GMR element film, and etching is performed using ion beam etching (IBE). After the resist is removed, the resist is formed. However, since the etching is performed at an incident angle of the ion beam with respect to the substrate of 0 °, the film re-adhered to the side wall of the resist pattern remains as a vertical protrusion, and this protrusion is formed. There has been a problem that it becomes an obstacle to the formation of the final protective film of the GMR element.

  The present invention has been made to solve the above-described problems, and has as its object to stably form a final protective film of a GMR element and improve the reliability of a magnetic sensing element. .

  In the magnetic sensing element of the present invention, the side surface of the resistance pattern serving as the giant magnetoresistive element has a taper of 20 ° or more and 80 ° or less with respect to the surface of the substrate for holding the giant magnetoresistive element. It is characterized by. Further, it is also characterized in that the side surface of the resistance pattern serving as the giant magnetoresistive element has a taper of 40 ° or more and 65 ° or less with respect to the surface of the substrate for holding the giant magnetoresistive element.

  According to the present invention, since the side surface of the resistance pattern serving as a giant magnetoresistive element has a taper of 20 ° or more and 80 ° or less with respect to the substrate surface, the final protective film can be formed stably, and The reliability of the device can be improved. Further, since the side surface of the resistance pattern is formed to have a taper of 40 ° or more and 65 ° or less with respect to the substrate surface, the final protective film can be formed more stably, and the reliability of the magnetic sensing element can be improved. The performance is further improved.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
Embodiment 1 FIG.
FIG. 1 is a diagram showing the magnetic characteristics of a GMR element constituting a magnetic sensing element and its device according to Embodiment 1 of the present invention.
As shown in FIG. 1, the magnetic curve showing the magnetic characteristics of the GMR element according to the first embodiment of the present invention has a maximum resistance value (hereinafter, referred to as Rmax) near magnetic field 0, and increases as the magnetic field increases. The resistance value decreases and takes a saturated state with a sufficiently large magnetic field (for example, 2 KOe or more). The resistance value in this saturated state is defined as Rmin. When the magnetic field is returned from the saturation magnetic field, the resistance value increases to the magnetic field 0 along a different path from that when the magnetic field is increased, that is, there is a so-called hysteresis.
Generally, the saturation magnetic field means a minimum magnetic field that reaches a saturated state. However, since the regulation is ambiguous, in the present invention, the saturation magnetic field is defined as a value obtained by adding 1% resistance to Rmin (Rmin × 1.01). And the magnetic field at the intersection of the magnetoresistive curve when the magnetic field is increased. "
As shown in FIGS. 2 and 3, the magnetic detection device provided with the magnetic detection element has at least one or more irregularities along the outer circumference, and has a disk-shaped magnetic structure that rotates in synchronization with the rotation of the rotating shaft 29. A magnetic field is applied to the rotator 30, the magnetic detecting element 28 arranged to face the outer periphery of the magnetic rotator 30 with a predetermined gap from the magnetic rotator 30, and the GMR element 7 provided in the magnetic detecting element 28. It comprises a magnet 31 and an integrated circuit 45 for processing the output of the GMR element 7. The width of the magnetic field detected by the GMR element 7 can be varied in accordance with the magnitude of the leakage magnetic flux of the magnet 31, the distance between the magnet 31 and the GMR element 7, and the distance between the magnetic rotator 30 and the GMR element 7. By adjusting them, the magnetic field width detected by the GMR element 7 falls within a range not less than the magnetic field at which the resistance value of the GMR element 7 becomes the maximum value and not more than the magnetic field obtained by multiplying the saturation magnetic field of the GMR element 7 by 0.8. To do.

  In FIG. 2, a magnetic detection element 28 including a GMR element 7 and an integrated circuit 45 provided by a lamination processing technique is disposed on the front surface of a substrate 1 such as a silicon substrate facing the outer periphery of the magnetic rotator 30. A magnet 31 is arranged on the back surface of the magnetic detecting element 28 by a mounting means (not shown). In the first embodiment of the present invention, the change in the magnetic field in the detection direction on the magneto-sensitive surface of the GMR element 7 provided on the front surface of the substrate 1 of the magnetic detection element 28 is equal to or greater than the magnetic field at which the resistance value of the GMR element 7 becomes the maximum value. To work with. Further, it is preferable that the device be operated in a range of not more than a magnetic field obtained by multiplying the saturation magnetic field of the GMR element 7 by 0.8. Therefore, any arrangement may be used as long as the arrangement satisfies this condition. . For example, in FIG. 3, the surface of the GMR element 7 provided in the magnetic sensing element 28 is arranged so as to be substantially perpendicular to the uneven surface of the magnetic rotator 30, and is directly above (or directly below) the GMR element 7. ) May be provided with a magnet 31. Also in this case, an integrated circuit (not shown) is attached near the GMR element 7.

When the magnetic field width detected by the GMR element 7 expands to a magnetic field smaller than the magnetic field of Rmax, the hysteresis of the magnetoresistance curve in the magnetic field width increases, and the accuracy in detecting the uneven edge of the magnetic rotating body 30 decreases, If the magnetic field range is extremely small, such as when the interval between the concavities and convexities of the magnetic rotator 30 facing the magnetic detection element 28 is partially reduced, a sufficient output signal cannot be obtained. It causes evil.
In general, the saturation magnetic field of the GMR film becomes smaller as the temperature rises. In some cases, a magnetic field obtained by multiplying the saturation magnetic field at room temperature by 0.8 exceeds the saturation magnetic field as the temperature rises. . The resistance change rate (% / Oe) near the saturation magnetic field at room temperature originally has a relatively small value, and the resistance change rate (% / Oe) further decreases as the temperature rises. Since the magnitude of the resistance change rate (% / Oe) is related to the output, the output is greatly reduced. As described above, if the magnetic field width detected by the GMR element 7 is widened to a magnetic field larger than the magnetic field obtained by multiplying the saturation magnetic field of the GMR element 7 by 0.8, there is an adverse effect that the output drops significantly during high-temperature operation.
By operating the GMR element 7 in a range not less than the magnetic field at which the resistance value of the GMR element 7 becomes the maximum value and not more than the magnetic field obtained by multiplying the saturation magnetic field of the GMR element 7 by 0.8, the above-mentioned adverse effects can be solved. The working temperature range can be expanded and the sensitivity can be increased.
As described above, in the first embodiment, when the change in the magnetic field in the detection direction on the magneto-sensitive surface of the GMR element 7 provided in the magnetic detection element 28 is greater than or equal to the magnetic field at which the resistance value of the GMR element 7 becomes the maximum value, Since the operation is performed in a range of not more than the magnetic field obtained by multiplying the saturation magnetic field by 0.8, it is possible to provide a magnetic detection element having a wide use environment temperature range and high detection sensitivity. The lower limit of the magnetic field less than or equal to 0.8 multiplied by 0.8 is as follows.
Assuming that the “magnetic field multiplied by 0.8” is Hss, from the viewpoint of the output decrease during high-temperature operation, −Hss ≦ H ≦ + Hss
This seems to be the effective range.

Embodiment 2 FIG.
FIG. 4 is a diagram showing the relationship between the resistance change rate per unit magnetic field and the number of laminations of the GMR element according to the second embodiment of the present invention.
FIG. 4 shows that the GMR element 7 is composed of a laminated film formed by repeating a layer of Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] and a layer of Cu. The resistance change rate per unit magnetic field and Fe (x) Co (1-x) [0 ≦ x when using a Cu thickness where the magnetoresistance change with respect to the thickness of this Cu layer is near the second peak. .Ltoreq.0.3] and the number of laminations in which Cu is bundled together. Here, the definition of the word "hit" is described later.
The resistance change rate per unit magnetic field (hereinafter referred to as magnetic field sensitivity) shown in FIG. 4 is obtained when Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] is used as the magnetic layer. In order to take a large value around 15 to 30 times of lamination and to have sufficient detection sensitivity even at a high temperature of around 150 ° C. as a magnetic detecting element, it is necessary to use in the range of 10 to 40 times of lamination. good. If the number of laminations is less than 10 times or more than 40 times, sufficient magnetic field sensitivity cannot be obtained in any of the samples.
As described above, in the second embodiment, the GMR element 7 is formed of a laminated film formed by repeating the layer of Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] and the layer of Cu, and The resistance change rate per unit magnetic field and Fe (x) Co (1-x) [0 ≦ x ≦ 0 when a Cu thickness where the magnetoresistance change with respect to the thickness of one Cu layer is near the second peak is used. .3] and the Cu layer are grouped together in a number of 10 or more and 40 or less, so that the sensitivity of the magnetic sensing element 28 can be improved.

Embodiment 3 FIG.
FIG. 5 is a diagram showing a relationship between the resistance change rate per unit magnetic field and the thickness of the FeCo layer of the GMR element according to the third embodiment of the present invention.
FIG. 5 shows that the GMR element showing the best characteristics in FIG. 4 is composed of a laminated film formed by repeating a layer of Fe (x) Co (1-x) [x = 0.1] and a layer of Cu. And the rate of change in resistance per unit magnetic field and one layer of Fe0.1Co0.9 when the Cu layer has a Cu thickness where the magnetoresistance change with respect to the thickness of one Cu layer is near the second peak. The relationship with the film thickness per unit is shown.
The rate of change in resistance per unit magnetic field shown in FIG. 5 rapidly rises from the vicinity of 10 ° in the thickness of the FeCo layer, shows a sufficiently large value in the vicinity of 12 ° to 20 °, and cannot provide sufficient magnetic field sensitivity when it exceeds 30 °. .
Therefore, it is preferable to form the GMR element 7 in a range where the film thickness per FeCo layer is 10 ° or more and 30 ° or less.
As described above, in the third embodiment, the GMR element 7 is formed of a laminated film formed by repeating a layer of Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] and a layer of Cu. Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] in the case where a Cu thickness where the magnetoresistance change with respect to the thickness of one Cu layer is near the second peak as the Cu layer is used. Since the thickness is set to 10 ° or more and 30 ° or less, the sensitivity of the magnetic sensing element 28 can be improved.

Embodiment 4 FIG.
6 and 7 are sectional views showing a film configuration of a GMR element according to Embodiment 4 of the present invention.
First, as shown in FIG. 6, in the process of forming the GMR element film 5, an FeCo layer 9a is formed on the surface of an underlayer 2 such as a Si thermal oxide film formed on a substrate 1 such as a Si substrate. After that, a Cu layer 10, a Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] layer 9, a Cu layer 10, and a FeCo layer 9 are sequentially stacked thereon. . A pair layer 90 of the FeCo layer 9 and the Cu layer 10 is laminated 10 to 40 times, and is formed so that the uppermost layer becomes the FeCo layer 9 as shown in FIG. When the Cu layer 10 having a higher conductivity than the FeCo layer 9 is used as the uppermost layer, the probability that electrons not contributing to the GMR effect flow near the surface increases, and as a result, the magnetoresistance ratio (MR) increases. In order to reduce the ratio, the uppermost layer is preferably the FeCo layer 9 as shown in FIG.
Then, as shown in FIG. 7, by forming a SiNx film as a protective film 8 continuously above the uppermost FeCo layer 9, oxidation of the GMR element film 5 can be prevented in a later photolithography process or the like. , The characteristics of the GMR element 7 can be stabilized. The SiNx film as the protective film 8 is formed without breaking the vacuum after the formation of the uppermost FeCo layer 9. That is, a GMR element film 5 (laminated film) is formed by repeatedly stacking a layer 9 of Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] and a layer 10 of Cu. The protective film 8 is formed on the uppermost layer of the film 5 to manufacture a giant magnetoresistive element. After forming the uppermost layer by a thin film processing technique such as sputtering in a vacuum, low-temperature plasma CVD, or vacuum deposition, The protective film 8 is also formed by thin film processing without breaking vacuum. Thereby, the natural oxidation of the GMR element film 5 can also be suppressed, and it works more effectively for stabilization.
As the protective film 8, instead of the SiNx film, a dielectric film such as a Si oxide film or a Ta oxide film, a metal film such as Ti, V, Ta, Nb, or Zr, a metal film obtained by combining them, or a film thereof. An oxide film or a nitride film can be used. Any of them can be formed by sputtering, low-temperature plasma CVD, or vacuum deposition so as not to impair the characteristics of the GMR element film 5.
As described above, in the fourth embodiment of the present invention, since the uppermost layer of the GMR element film 5 is the FeCo layer 9 as shown in FIG. 7, the magnetic characteristics of the GMR element 7 can be improved, By forming the protective film 8 after the formation of the film 5, the reliability of the GMR element 7 can be improved.
Here, the definition of the above-mentioned word "hitsukuri" will be described. In the films having the laminated structure shown in FIGS. 6 and 7, in the figures, 9 is a layer of FeCo, and 10 is a layer of Cu. Layer 9a / [Cu layer 10 / FeCo layer 9] / [Cu layer 10 / FeCo layer 9] / [Cu layer 10 / FeCo layer 9] ... / [Cu layer 10 / FeCo layer As shown in [Layer 9], a layered structure is completed by repeating the pair layer 90 of [Cu layer 10 / FeCo layer 9]. The phrase "close" refers to the pair layer 90 of the [Cu layer 10 / FeCo layer 9]. It may be considered as a set of laminated structures other than the first FeCo.
If this laminated structure is described in a simplified manner, the lowermost FeCo layer 9a / [Cu layer 10 / FeCo layer 9] × n (the number of crossings is n), where n is the number of laminations Notation.
In this case, the lowermost FeCo layer 9a is not necessarily required, but is included because it can be more stably manufactured. The paired layer 90 of the Cu layer 10 and the FeCo layer 9 is referred to as "one piece" as a name representing only [Cu layer 10 / FeCo layer 9] × n.

Embodiment 5 FIG.
FIGS. 8A and 8B are cross-sectional views showing a film configuration when the GMR element 7 according to the fifth embodiment of the present invention is patterned.
The GMR element 7 is formed by patterning the GMR element film 5 formed by stacking the pair layers 90 n times. When the GMR element film 5 is patterned, it is formed on the GMR element film 5. A method is employed in which an element pattern is transferred to a resist on the protective film 8 by a photolithography technique, etched using ion beam etching (IBE), and finally the resist is removed.
FIG. 8A is a cross-sectional view of the GMR element 7 in which the resist pattern has been removed after etching at an incident angle of the ion beam with respect to the substrate 1 of 0 °. The protrusion remains as a vertical protrusion, and this protrusion hinders formation of a final protective film mainly for protecting the side wall of the GMR element film 5.
On the other hand, FIG. 8B is a cross-sectional view of the GMR element 7 from which the resist pattern has been removed after the etching when the ion beam has an incident angle with respect to the substrate 1 and the etching has been performed. The residue of the redeposition film 11 seen in FIG. 8A is eliminated, and the side surface is tapered, thereby improving the coverage in forming the final protective film. At this time, the taper angle 12 of 20 ° or more and 80 ° or less has a sufficient effect, but is more preferably 40 ° or more in terms of accuracy of pattern width, reduction of pattern width, and reduction of interval between patterns. Considering mass productivity in consideration of the fact that the remainder of the adhesion film 11 becomes almost zero stochastically, the angle is more preferably 65 ° or less.
As described above, in the fifth embodiment, the pattern of the GMR element 7 is provided with the taper angle 12 of 20 ° or more and 80 ° or less, preferably 40 ° or more and 65 ° or less, so that the reliability of the GMR element 7 is improved. be able to.
Although the GMR element 7 has been described as being formed on the substrate 1 by the lamination processing technique, the GMR element 7 itself manufactured on another substrate may be bonded on the substrate 1. .

FIG. 3 is a diagram illustrating magnetic properties of a giant magnetoresistive element used for the magnetic detection element according to Embodiment 1 of the present invention. FIG. 1 is a perspective view illustrating a configuration of a magnetic detection device according to Embodiment 1 of the present invention. FIG. 1 is a perspective view illustrating a configuration of a magnetic detection device according to Embodiment 1 of the present invention. FIG. 10 is a diagram showing a relationship between a resistance change rate per unit magnetic field and the number of laminations of a giant magnetoresistive element used for a magnetic detection element according to Embodiment 2 of the present invention. FIG. 10 is a diagram showing a relationship between a resistance change rate per unit magnetic field and a thickness of a FeCo layer of a giant magnetoresistive element used in a magnetic detection element according to Embodiment 3 of the present invention. FIG. 13 is a cross-sectional view illustrating a film configuration of a giant magnetoresistive element used for a magnetic sensing element according to Embodiment 4 of the present invention. FIG. 13 is a cross-sectional view illustrating a film configuration of a giant magnetoresistive element used for a magnetic sensing element according to Embodiment 4 of the present invention. FIG. 14 is a cross-sectional view of a side surface portion of a giant magnetoresistive element used for a magnetic detection element according to Embodiment 5 of the present invention. It is a side view which shows the structure of the conventional magnetic detection device. It is a perspective view showing the composition of the conventional magnetism detecting device. FIG. 9 is a diagram showing characteristics of a conventional GMR element. It is a side view which shows the structure of the magnetic detection apparatus using the conventional GMR element. It is a perspective view showing the composition of the magnetic sensing device using the conventional GMR element. FIG. 10 is a block diagram illustrating a magnetic detection device using a conventional GMR element. It is a block diagram which shows the detail of the magnetic detection apparatus using the conventional GMR element. FIG. 9 is a diagram illustrating an example of a circuit configuration of a magnetic detection device using a conventional GMR element. FIG. 9 is a diagram illustrating a configuration of a conventional magnetic detection element. FIG. 11 is a characteristic diagram illustrating an operation of a conventional magnetic detection element.

Explanation of reference numerals

1 substrate, 2 underlayer, 5 GMR element film, 7 GMR element (giant magnetoresistive element),
8 Si nitride film (protective film), 9 Fe (x) Co (1-x) [0 ≦ x ≦ 0.3] layer,
10 Cu layer, 11 redeposited film, 12 taper angle, 28 magnetic sensing element,
30 magnetic rotating body, 31 magnet.

Claims (2)

  A magnetic detecting element, wherein a side surface of a resistance pattern serving as a giant magnetoresistive element has a taper of not less than 20 ° and not more than 80 ° with respect to a surface of a substrate for holding the giant magnetoresistive element.   A magnetic detecting element, wherein a side surface of a resistance pattern serving as a giant magnetoresistive element has a taper of 40 ° or more and 65 ° or less with respect to a surface of a substrate for holding the giant magnetoresistive element.

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