JP2004221560A5

JP2004221560A5 -

Info

Publication number: JP2004221560A5
Application number: JP2003426644A
Authority: JP
Filing date: 2003-12-24
Publication date: 2007-02-15
Anticipated expiration: 2023-12-24

Claims

Into a uniform beam energy distribution at the rectangular laser beam emitted from a laser oscillator by using a de-I full tractive optics,
By entering the beam optical system having a's over beam function is Oite imaged on the irradiation surface, and to form a uniform linear beam energy distribution,
Laser irradiation method comprising the Rukoto is for work an optical system having a zoom function, varying the size of the linear beam on the irradiation surface.

Into a uniform beam energy distribution at the rectangular laser beam emitted from a laser oscillator by using a de-I full tractive optics,
By entering the beam optical system having a single position conjugate ratio design, is Oite imaged on the irradiation surface, and the laser irradiation method, which comprises forming a homogeneous linear beam energy distribution.

Into a uniform beam energy distribution at the rectangular laser beam emitted from a laser oscillator by using a de-I full tractive optics,
By entering the beam optical system having a single position conjugate ratio design, is Oite imaged on the irradiation surface, and to form a uniform linear beam energy distribution,
By the action of an optical system having a unit conjugate ratio design, the laser irradiation method characterized by changing the size of the linear beam on the irradiation surface.

In any one of claims 1 to 3, wherein the laser beam is a laser irradiation method, wherein the gas laser are those emitted from one selected from a solid laser and a metal laser.

In the claims 1 to any one of 3, the laser beam, Ar laser, Kr laser, CO ₂ laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ _laser, Y 2 _{O 3} laser, alexandrite laser Ti: A laser irradiation method characterized by being emitted from a material selected from a sapphire laser and a helium cadmium laser.

A laser oscillator;
A diffusion tractive optics into a uniform beam of energy distribution of the laser beam emitted from the laser oscillator in a rectangular shape,
Before millet over beam is imaged on the irradiation surface, the laser irradiation apparatus, comprising an optical system having a zoom function of the size of the beam is changed in the irradiated surface.

A laser oscillator;
A diffusion tractive optics into a uniform beam of energy distribution of the laser beam emitted from the laser oscillator in a rectangular shape,
Laser irradiation apparatus, comprising an optical system unit conjugate ratio designed to image before millet over beam on the irradiation surface.

A laser oscillator;
A diffusion tractive optics into a uniform beam of energy distribution of the laser beam emitted from the laser oscillator in a rectangular shape,
Before millet over beam is imaged on the irradiation surface, the laser irradiation apparatus, comprising an optical system unit conjugate ratio design to a size of the beam is changed in the irradiated surface.

In any one of claims 6-8, wherein the laser oscillator, the laser irradiation apparatus, characterized in that a gas laser, those selected from solid state lasers, and metal lasers.

In any one of claims 6-8, wherein the laser oscillator, Ar laser, Kr laser, CO ₂ laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ _laser, Y 2 _{O 3} laser, alexandrite laser Ti: a laser irradiation apparatus selected from sapphire laser and helium cadmium laser.

A semiconductor film is formed on the substrate ,
A laser beam emitted from a laser oscillator is incident on the diffractive optics on the semiconductor film, and then incident on an optical system having a zoom function to irradiate a linear beam with a uniform energy distribution. A method for manufacturing a semiconductor device for crystallizing
A method for manufacturing a semiconductor device , wherein the size of a linear beam applied to the semiconductor film is changed by applying an optical system having the zoom function .

A semiconductor film is formed on the substrate ,
The semiconductor film is irradiated with a linear beam having a uniform energy distribution formed by making a laser beam emitted from a laser oscillator enter a diffractive optics and then entering an optical system having a unit conjugate ratio design. A method for manufacturing a semiconductor device, characterized by crystallizing a film .

A semiconductor film is formed on the substrate ,
The semiconductor film is irradiated with a linear beam having a uniform energy distribution formed by making a laser beam emitted from a laser oscillator enter a diffractive optics and then entering an optical system having a unit conjugate ratio design. A method for manufacturing a semiconductor device for crystallizing a film,
The method for manufacturing a semiconductor device, characterized in that said by Rukoto changing the ratio of the unit conjugate ratio design, thereby varying ized the magnitude of the linear beam to be irradiated to the semiconductor film.

In any one of claims 11 to 13, wherein the laser oscillator, a method for manufacturing a semiconductor device, characterized in that a gas laser, those selected from solid state lasers, and metal lasers.

In any one of claims 11 to 13, wherein the laser oscillator, Ar laser, Kr laser, CO ₂ laser, YAG laser, YVO ₄ laser, YLF laser, YAlO ₃ _laser, Y 2 _{O 3} laser, alexandrite laser Ti: A method for manufacturing a semiconductor device, which is selected from sapphire laser and helium cadmium laser.