JP2004221075A - Electronic device, and picture image display device using same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an antistatic film with low power consumption and good electrical contact as an antistatic measure for the insulating substrate surface on which, an electronic device is formed. <P>SOLUTION: The electron device comprises a conductor and a resistance film connected to the conductor on the insulating substrate. The resistance film has an area connected to the conductor where the thickness is thicker than that of another area. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to an electronic device such as an electron source provided on an insulating substrate and having a resistive film for preventing charging of the substrate surface.

  In recent years, semiconductor devices, electron-emitting devices, and the like have been used in many fields as electronic devices. Above all, application of an electron-emitting device to an image display device is being studied. Electron-emitting devices are roughly classified into two types using a thermionic electron-emitting device and a cold cathode electron-emitting device. The cold cathode electron emitting device includes a field emission type (hereinafter, referred to as “FE type”), a metal / insulating layer / metal type (hereinafter, referred to as “MIM type”), a surface conduction type electron emitting device, and the like. Since the surface conduction electron-emitting device has a simple structure and is easy to manufacture, great expectations are placed on its application to an image display device.

These electronic devices may be formed on an insulating substrate such as a glass substrate.In this case, the surface of the insulating substrate is charged during the operation of the electronic device, and the operation state of the electronic device changes. Or become unstable, which was a problem. In order to solve this problem, for example, Patent Documents 1 and 2 disclose forming a high-resistance conductive film on the surface of an insulating substrate.
EP 343645A (corresponding Japanese gazette: Japanese Patent Application Laid-Open No. 01-298624) JP 08-180801 A

  By covering the surface of the insulating substrate on which the electronic device is formed with a resistive film, it is possible to prevent charging of the substrate surface, but on the other hand, the electric current flowing through the resistive film causes power consumption of the entire electronic device. Will increase. On the other hand, if reduction of power consumption is valued, prevention of charging becomes insufficient, and further improvement is required to achieve both reduction of power consumption and prevention of charging. In particular, in a surface conduction electron-emitting device having an electron-emitting portion on the substrate surface, the shape of the antistatic resistive film in and around the electron-emitting portion greatly affects the electron emission characteristics. Attention is necessary. Further, in the case of the surface conduction electron-emitting device, as described in the above-mentioned patent document, an energization process called a forming process is performed for forming the electron-emitting portion. In this process, depending on the shape of the resistive film for preventing electrification, Have confirmed that the electron-emitting portion may not be formed well, which not only reduces the amount of electron emission but also increases unnecessary leakage current. Further, not only the surface conduction electron-emitting device but also other electron-emitting devices may cause the above-described problem, and improvement has been demanded. In view of the above, the present invention provides a novel configuration of a resistive film on the surface of an insulating substrate and a method for manufacturing the same.

The present invention relates to an electronic device such as an electron source,
An electronic device comprising a conductor and a resistive film connected to the conductor on an insulating substrate, wherein the resistive film has a thicker portion in a connection region with the conductor than in other regions. It is characterized by. Another aspect of the present invention is an electron source including, on an insulating substrate, an electron-emitting portion, a conductor electrically connected to the electron-emitting portion, and a resistive film connected to the conductor. The thickness is characterized by having a portion thicker in the connection region with the conductor than in other regions.

Another invention is a method of manufacturing an electronic device substrate,
A step of preparing a substrate having an insulating region and a conductive region on the surface,
The method includes a surface treatment step of making the contact angle of the conductor region smaller than 80 ° and a step of forming a resistive film so as to extend over the conductor region and the insulation region of the surface-treated substrate.

Also, as a preferred embodiment, an electronic device, specifically, a method for manufacturing an electron source,
Forming a plurality of electron-emitting devices and a plurality of porous wirings for driving the electron-emitting devices on a part of the insulating substrate; and forming the electron-emitting devices and the porous wiring. A step of applying a conductive solution on the surface of the insulating substrate to cover the wiring and the surface of the insulating substrate, drying and forming a resistive film. It is characterized by being equal to or more than the saturated amount of water absorption of the porous wiring.

  According to the present invention, the electric connection between the wiring and the antistatic film (resistive film) is ensured while the power consumption is sufficiently reduced, and the antistatic function is sufficiently obtained. In addition, when the present invention is applied to an electron-emitting device, which is one of electronic devices, it is possible to obtain good electron emission, sufficiently reduce power consumption, and to use a conductor such as an antistatic film (resistance film) and wiring. And the electrical connection with the battery can be secured, and the antistatic function can be sufficiently obtained.

  SUMMARY OF THE INVENTION The present invention provides a novel configuration and a method for manufacturing a resistive film (antistatic film) for preventing electrification of the surface of an insulating substrate, and more specifically, an electronic device such as an electron source, An electronic device comprising a conductor and a resistive film connected to the conductor on an insulating substrate, wherein the resistive film has a thicker portion in a connection region with the conductor than other regions. Features. This prevents charging of the surface of the insulating substrate while sufficiently suppressing power consumption. That is, (1) It is desirable that the insulating surface has a sufficiently high resistance for the purpose of suppressing power consumption while preventing electrification. In particular, in the case of an electron source having an electron-emitting device on an insulating substrate, it is desired that the resistive film covering the upper part of the electron-emitting portion has an extremely thin film configuration so as not to hinder electron emission. On the other hand, (2) it is desirable that the connection region with the conductor has a relatively low resistance so that sufficient electrical conduction is possible, and that the contact region also reliably contacts the conductor in terms of mechanical strength. It is composed of a film having a shape. This will be described with reference to FIGS. 7 to 9 show an example of a configuration having no function of the above (1) or (2), wherein 11 is a conductor, 12 is an insulating substrate, 13 is a resistive film for preventing electrification, and 14 is This is the thickness of the resistance film in the connection region with the conductor. In FIG. 7, the thickness of the resistive film in the connection region is smaller than the thickness of the resistive film in the region covering the insulating surface. If the thickness of the resistive film is determined so as to satisfy the above (1) (solid line), If good electrical connection cannot be achieved and the thickness of the resistive film is determined so as to satisfy the above (2) (broken line), power consumption is unnecessarily wasted. 8 and 9 show a configuration in which the thickness of the resistive film in the connection region is the same as the thickness of the resistive film in the region covering the insulating surface, and these are the same as (1) and (2) in FIG. Cannot satisfy both conditions. On the other hand, in FIG. 10 which is an example of the present invention, since the thickness of the resistance film in the connection region has a portion thicker than the thickness of the resistance film in the region covering the insulating surface, both of the above (1) and (2) are used. Satisfies the conditions described above, realizes a contact state with the conductor reliably and with excellent mechanical strength, establishes a good electrical connection with the conductor, and achieves antistatic while suppressing power consumption. Here, the thickness of the resistive film in the connection region with the conductor is indicated by a thick arrow line in each drawing. In other words, the interface formed by the conductor and the resistive film and the resistive film Means the largest of the shortest distances to the surface. In other words, although the thin arrow line segment in FIGS. 9 and 10 is the shortest distance between the interface formed by the conductor and the resistive film and the surface of the resistive film, it is not the largest distance, so it is referred to in the present invention. It does not correspond to "thickness of resistive film in connection region with conductor".

  Hereinafter, the present invention will be described based on more specific examples.

  A plurality of electron-emitting devices having the same configuration as that shown in FIG. 1 were arranged on a substrate as schematically shown in FIG. 2 to form a display device. An electron source (4 in FIG. 2) in which a plurality of electron-emitting devices are arranged in a matrix wiring was prepared by the following procedure.

  In the figure, 7 is a conductive thin film, 5 and 6 are device electrodes, 9b is a Y-direction wiring, and 9a is an X-direction wiring.

  Although an insulating layer is actually formed between the Y-direction wiring and the X-direction wiring, some of these members are omitted in the figure to make the structure easy to understand.

  Next, a specific manufacturing method will be described.

[Step 1]
After the blue plate glass was washed with a detergent and pure water, a pattern of the shape of the device electrodes 5 and 6 was formed by a photolithography method.

  The element electrode interval was set to 10 μm.

[Step 2]
Next, using a paste material containing silver as a metal component (NP-4028A; manufactured by Noritake Co., Ltd.), a pattern of the Y-directional wiring 9b is formed by a screen printing method. Was formed.

  Thereafter, a paste serving as a silicon oxide precursor is also printed by a screen printing method at a position where the X-directional wiring 9a to be formed in a later step is to be formed, to insulate the Y-directional wiring 9b from the X-directional wiring 9a. An insulating layer was formed. A portion of the insulating layer located above the device electrode 5 was partially cut away in order to achieve connection between the device electrode 5 and an X-directional wiring 9a to be formed later.

[Step 4]
An X-directional wiring 9a was formed in the same manner as in Step 2, and a wiring was formed.

[Step 5]
Next, a conductive thin film 7 was formed.

  Specifically, an organic palladium-containing solution is applied by using a bubble jet (R) type inkjet ejector so as to have a width of 200 μm, and then subjected to a heat treatment at 350 ° C. for 10 minutes. Thus, a fine particle film composed of fine palladium oxide particles was obtained.

  Thereafter, the substrate thus completed was subjected to ultrasonic cleaning with a weak alkaline cleaning liquid. 0.4 wt. Ultrasonic cleaning was performed for 2 minutes using% TMAH (trimethylammonium hydride).

  After the washing, rinsing with running water was performed for 5 minutes with pure water, and attached water was removed with an air knife, followed by drying at 120 ° C. for 2 minutes in an oven.

  At this time, the contact angle of each part on the substrate 4 was measured. The contact angle was measured by dropping water from a fine capillary tube, photographing the moment from above with a high-speed camera, and observing the droplet diameter. The contact angle can be determined from the drop amount and the droplet diameter. The contact angle at this time is as shown in the table below.

  Thereafter, the surface of the substrate 4 was covered with the resistance film 10 by the method described below.

  The resistive film 10 used was obtained by dispersing oxide fine particles obtained by doping tin oxide with antimony oxide in a 1: 1 mixture of ethanol and isopropanol. The weight concentration of the solid was about 0.1 Wt%.

  A spray method was used as a coating method. Using a spray device, a liquid pressure of 0.025 Mpa, an air pressure of 1.5 kg / cm2, a distance between the substrate and the head of 50 mm, and a head moving speed of 0.8 m / sec. Was applied under the following conditions.

  After coating, 425 ° C., 20 min. Was fired in the air.

  Next, a display device was constructed using the electron source created as described above. This will be described with reference to FIG.

  After fixing the substrate 4 on which a large number of planar surface conduction electron-emitting devices have been formed as described above on the rear plate 29, the face plate 34 (the inner surface of the glass substrate 31 is And a metal back 33 are formed), and are arranged via a support frame 30. Frit glass is applied to the joint between the face plate 34, the support frame 30, and the rear plate 29, and the frit glass is applied in the air or in a nitrogen atmosphere. At 400 ° C. to 500 ° C. for 10 min. The above was fired to seal.

  The fixing of the substrate 4 to the rear plate 29 was also performed using frit glass.

  In FIG. 2, reference numeral 1 denotes an electron-emitting device, and 9a and 9b denote device wirings in the X and Y directions, respectively.

  The fluorescent film 32 is made of only a phosphor in the case of monochrome, but in this embodiment, the phosphor adopts a stripe shape, a black stripe is formed first, and a phosphor of each color is applied to a gap between the phosphors. A film 32 was produced.

  As a material for the black stripe, a material mainly containing graphite, which is commonly used, was used.

  A slurry method was used to apply the phosphor onto the glass substrate 31.

  On the inner surface side of the fluorescent film 32, a metal back 33 is usually provided.

  The metal back was manufactured by performing a smoothing process (usually called filming) on the inner surface of the fluorescent film after the fluorescent film was manufactured, and then performing vacuum deposition of Al.

  The face plate 34 may be provided with a transparent electrode (not shown) on the outer surface side of the fluorescent film 32 in order to further increase the conductivity of the fluorescent film 32. In this embodiment, however, only a metal back is sufficient to provide sufficient conductivity. It is omitted because it has the property.

  When the above-mentioned sealing is performed, in the case of color, the phosphors of each color must correspond to the electron-emitting devices.

  The atmosphere in the glass container completed as described above is evacuated by a vacuum pump through an exhaust pipe (not shown), and after reaching a sufficient degree of vacuum, through the external terminals Dxo1 to Doxm and Doy1 to Doyn. A voltage was applied between the electrodes 5 and 6 of the electron-emitting device 6 to form the electron-emitting portion forming thin film 7, thereby forming an electron-emitting portion 8.

  The voltage waveform of the forming process is the same as that in FIG.

  In this embodiment, T1 is set to 1 msec. , T2 is 10 msec. And performed under a pressure of about 2 × 10 −3 Pa. Incidentally, it is also possible to use the waveform voltage shown in FIG.

  In the electron-emitting portion 8 thus formed, fine particles mainly composed of palladium element were dispersed and arranged, and the average particle size of the fine particles was 3 nm.

  Next, acetone was introduced into the panel from the exhaust pipe of the panel through a slow leak valve to maintain 0.1 Pa.

  Next, the triangular wave used in the forming process is changed to a rectangular wave, and at a wave height of 14 V, the device current If (current flowing between the device electrodes 5 and 6) and the emission current Ie (reach (flow) the anode (metal back)). The activation process was performed while measuring the current.

  As described above, the forming and activating processes were performed to form the electron-emitting portion 8, and the electron-emitting device was manufactured.

  The steps of the energization forming and the activation showed completely the same behavior as those of the electron-emitting device not covered with the resistive film 10 (comparative example).

  This is probably because the thickness of the resistive film 10 covering the electron-emitting device film was sufficiently small to have no effect on the device.

  Next, the gas was evacuated to a pressure of about 10 −6 Pa, and the envelope was sealed by heating an exhaust pipe (not shown) by heating with a gas burner.

  Finally, in order to maintain the degree of vacuum after sealing, getter processing was performed by a high-frequency heating method.

  In the image display device 35 of the present embodiment completed as described above, the scanning signal and the modulation signal are supplied to the respective electron-emitting devices through signal terminals (not shown) through the external terminals Dox1 to Doxm and Doy1 to Doyn. By applying the voltage, electrons are emitted, and a high voltage of several kV or more is applied to the metal back 33 or the transparent electrode (not shown) through the high voltage terminal Hv to accelerate the electron beam and collide with the fluorescent film 32 for excitation. -Images were displayed by emitting light.

  As a result, a stable image was displayed, the electron beam was not deflected or the like, no destruction due to electric discharge was observed, and a very clear image was obtained.

  At Va = 10 kV, an average emission current Ie of 3.0 μA / element was obtained, the emission efficiency (Ie / If) was 2.6%, and the variation of Ie among the elements was σ = 5.6%. And good values were obtained.

  After that, the image forming apparatus was disassembled, and the coating form was observed by SEM and the coating film thickness was analyzed by cross-sectional TEM. As a result, it was found that the thickness profile of the resistive film on the substrate 2 was as shown in FIG. FIG. 4B is a sectional view taken along the line AA ′ of FIG.

  When the film thickness of each part of the resistance film 10 was evaluated by the cross-sectional TEM, the result was as follows (the film thickness is an approximate value).

  As described above, in the case of a shape surrounded by a well shape on all sides, the profile of the liquid present therein largely depends on the contact angle between the wall surface (the conductor region in this case) and the liquid, and there are two forms. If the contact angle of the conductor region is less than 80 °, basically, the liquid and the solid attract each other due to the free energy existing on the surface, and try to reduce the solid-liquid interface. Form a profile. Conversely, when the angle is 80 ° to 90 ° or more, the force of attraction between the solid and the liquid is weak, and the force of solidification between the liquids becomes relatively large, so that a profile as shown in FIG. 4A is formed.

  By such a mechanism, as shown in FIG. 4B, a resistive film (antistatic film) having a thicker connection region with the wiring than other parts is formed, and the power consumption and the wiring are sufficiently reduced. The electrical connection with the prevention film (resistive film) is ensured, and a sufficient antistatic function can be obtained.

  In Example 2, the conductive paste containing silver was used for forming the Y-direction wiring, but the composition of the organic polymer binder was larger than that in Example 1. After firing, the wiring becomes porous and sucks a liquid having a low viscosity.

  When such a porous material absorbs a liquid until saturation, it has a very good affinity with the liquid, does not form a droplet on the surface, and forms a surface having a substantially zero contact angle.

  In this embodiment, when applying the resistive film 10, the head concentration is reduced so that the concentration of the solution is reduced to 比較 compared to the first embodiment, and instead, the coating amount per unit area is doubled. Of the wiring is reduced to half, so as to exceed the saturated amount of water absorption of the wiring.

  The specific conditions are as follows.

  The resistance film 10 was prepared by dispersing oxide fine particles obtained by doping tin oxide with antimony oxide in a 1: 1 mixture of ethanol and isopropanol, and the weight concentration of the solid was about 0.05 Wt%.

  A spray method was used as a coating method. Using a swirl spray device manufactured by Nordson Corporation, a liquid pressure of 0.025 Mpa, an air pressure of 1.5 kg / cm2, a distance between the substrate and the head of 50 mm, and a head moving speed of 0.4 m / sec. Was applied under the following conditions.

  The subsequent assembling process was performed in the same manner as in Example 1 to produce an image forming apparatus.

  As a result, a stable image was displayed, the electron beam was not deflected or the like, no destruction due to electric discharge was observed, and a very clear image was obtained.

  At Va = 10 kV, an emission current Ie of 3.2 μA / 1 element on average was obtained, the emission efficiency was 2.9%, and the variation of Ie among the elements was as good as σ = 5.3%. Obtained.

  After that, the image forming apparatus was disassembled, and the coating form was observed by SEM and the coating film thickness was analyzed by cross-sectional TEM. As a result, it was found that the film thickness profile of the resistive film 10 on the substrate 2 was the same as in Example 1.

  The film thickness of each part was as follows.

  It should be noted that although a great number of film components (oxide fine particles) exist on the surface of the Y-direction wiring, it is difficult to define the film thickness because of the complicated surface shape. The values here are only approximate values.

  In this embodiment, since the Y-direction wiring is porous, the coating liquid is absorbed by the capillary phenomenon. The capillary phenomenon is suitably exhibited when the contact angle is 90 ° or less, more preferably 80 ° or less. In such a state, the Y-directional wiring that has absorbed the liquid up to the saturation amount has a very good affinity for the liquid, and forms a surface having a pseudo contact angle of 0 °. Therefore, when the wiring is porous, the coating amount is equal to or more than the saturation amount, and when the contact angle between the wiring material and the coating liquid is 80 ° or less, a coating shape as shown in FIG. be able to.

  Also in this example, the electric connection between the wiring and the antistatic film (resistive film) was secured while the power consumption was sufficiently reduced, and the antistatic function was sufficiently obtained.

  In the third embodiment, basically the same assembling process as in the first embodiment is performed.

  The conditions for applying the resistive film 10 were the same as in Example 1.

  Before forming the resistance film 10, the insulating surface is subjected to a hydrophobic treatment using TEOS (tetraethoxyorganosilane).

  Specifically, TEOS and the substrate were sealed in a chamber and left for 2 minutes to perform gas phase adsorption at room temperature. Thereafter, organic US washing was performed for 5 minutes with EtOH.

  The contact angles of the respective parts before the formation of the resistance film 10 are as follows.

  The conditions for applying the resistive film 10 were the same as in Example 1, and the assembly was performed in the same manner as in Example 1.

  Image formation was performed using the resulting image forming apparatus.

  As a result, a stable image was displayed, the electron beam was not deflected or the like, no destruction due to electric discharge was observed, and a very clear image was obtained.

  At Va = 10 kV, an average emission current Ie of 2.1 μA / element was obtained, and the emission efficiency was 2.0%. Further, the Ie variation between the devices was 5.3%.

  Thereafter, the image forming apparatus was disassembled, and the profile of the resistive film 10 was examined in the same manner as in Example 1. As a result, it was found that the profile was the same as that of Example 1, and the film thickness was almost the same.

  A method for manufacturing the electron source substrate 4 according to the fourth embodiment will be described below. The schematic configuration is the same as FIGS. 1 and 4B.

[Step 1]
A substrate 2 having a silicon oxide film having a thickness of 1 μm formed on a blue plate glass by a CVD method is washed with a detergent and pure water, and then a pattern to be a gap between the device electrodes 5 and 6 and a device electrode is formed by a photoresist (RD-2000N-). 41, manufactured by Hitachi Chemical Co., Ltd.), and a 5 nm-thick Ti and a 100 nm-thick Pt were sequentially deposited by a vacuum evaporation method.

  Then, the photoresist pattern was dissolved with an organic solvent, and the Pt / Ti deposited film was lifted off to form device electrodes 5 and 6 having a device electrode interval L of 20 μm and a device electrode width W of 150 μm.

[Step 2]
Next, a photosensitive paste material containing Ag as a main component as a metal component is used, and unnecessary portions are removed by performing patterning by photolithography after screen printing on the entire surface. Next, the patterned paste was fired by a heat treatment apparatus under the conditions of a peak temperature of 480 ° C. and a peak holding time of 10 minutes to form a Y-directional wiring 9b having a thickness of about 20 μm. The wiring material formed by this method has porosity.

[Step 3]
Next, using a photosensitive paste material containing PbO as a main component, patterning is performed by a photolithographic method after screen printing on the entire surface, and unnecessary portions are removed. After that, firing is performed under the same conditions as in step 2 to form an interlayer insulating layer.

  In this example, this step was repeated to ensure insulation stability, and the insulating layer was formed into a laminated structure of three layers, with an average thickness of 30 microns. Like the Y-direction wiring 9b, this insulating layer also has porosity.

[Step 4]
An X-directional wiring 72 was formed in the same manner as in Step 2, using a photosensitive paste material containing Ag as a main component as a metal component. As described above, this wiring is also porous and has a thickness of about 20 μm.

[Step 5]
Next, a conductive thin film 7 is formed.

  Specifically, an organic palladium-containing solution (ccp-4230, manufactured by Okuno Pharmaceutical Co., Ltd.) was applied to a device electrode using a bubble jet (R) type inkjet ejector so that the width of the conductive thin film 7 became 100 μm. It was formed at the center of the gaps 5 and 6.

  Thereafter, a heat treatment was performed at 350 ° C. for 10 minutes to obtain a fine particle film composed of fine palladium particles.

[Step 6]
Subsequently, an antistatic film (resistance film) 10 is formed.

  The spray nozzle is moved by applying a solution in which ultrafine particles of tin oxide (antimony dope) are dispersed in an organic solvent (a mixture of isopropyl alcohol and n-butyl alcohol) by a liquid pressurized one-fluid spray device, and the spray is applied to the entire area to be charged. The prevention film 10 is formed.

In this example, the spray conditions were adjusted so that the spray amount was 100 ml / m ^2, and a sufficient amount of solution was applied so as to exceed the saturation value of the water absorption of the wiring.

  In order to obtain a predetermined electrical conductivity, it is necessary to adjust the solid content concentration which finally becomes a film. In this embodiment, the solid content concentration was set to 0.1 wt%.

  After spray coating, the substrate was heat-treated at 380 ° C. for 10 minutes to stabilize the characteristics.

  FIG. 5 shows a typical example of the result of measuring the film thickness distribution in the cell by breaking the substrate after evaluating the characteristics of the electron-emitting device.

  From the result of the film thickness distribution measurement inside the cell of the antistatic film 10 (portion surrounded by the wirings 9a and 9b in FIG. 1), the film thickness near the center of the cell where the electron emission portion is provided is suppressed to less than half of the peripheral portion. I can do it. The following manufacturing method of the image display device is the same as that of the first embodiment, and thus the description is omitted.

  In this embodiment, all the insulating surfaces on the substrate are covered with an antistatic film 10 made of a high-resistance conductive material, thereby effectively preventing electrification due to electron emission.

  Further, by using the present invention, the thickness of the antistatic film on the electron emission portion formed near the center is suppressed to be smaller than that of the periphery, so that the electron emission efficiency does not decrease. Further, while sufficiently reducing the power consumption, the electrical connection between the wiring and the antistatic film (resistance film) was ensured, and the antistatic function was sufficiently obtained. As a result, high-efficiency electron emission was stably obtained from the electron-emitting device, the electron beam was not deflected due to charging, and no destruction due to discharge was observed.

  In this example, the organic solvent used in [Step 6] of Example 4 was changed from n-butyl alcohol to ethyl alcohol, and the evaporation rate of the solvent component was increased.

  Steps before and after [Step 6] are the same as those in Example 4, and thus description thereof will be omitted.

  Also in the present embodiment, the configuration of the substrate and the spray conditions were the same as those in the fourth embodiment.

  FIG. 6 shows a representative example of the results of measurement by disassembling the film thickness distribution substrate in the cell of the antistatic film formed in this example.

  The use of a solvent having an increased evaporation rate reduces the film thickness distribution ratio between the center and the periphery as compared with FIG. 5, but has the effect of making the film thickness in the center thinner than the periphery. I have.

  This example confirmed that the present invention was not limited to a specific solvent component.

  Also in the present embodiment, since the thickness of the antistatic film on the electron emission portion formed near the center of the cell surrounded by the wiring is suppressed to be smaller than the surroundings, the electron emission efficiency decreases. There was no. Further, while sufficiently reducing the power consumption, the electrical connection between the wiring and the antistatic film (resistance film) was ensured, and the antistatic function was sufficiently obtained.

  In the following, an example in which a hydrophobic film is provided on an electron emission portion will be described in detail as a countermeasure for remaining uncut during forming of an element film. Since the schematic configuration is the same as that of FIG.

  Step 1: A 900 × 600 (mm) blue plate glass substrate was used as an insulating substrate, washed sufficiently with an organic solvent or the like, and then dried at 120 ° C. The device electrodes 5 and 6 made of Pt were formed on the substrate by using a vacuum film forming technique and a photolithography technique. At this time, the thickness of Pt was 500 °, and the distance L between the device electrodes 5 and 6 was 10 μm.

  Step 2: Next, using silver photopaste as a material, screen printing is performed, then dried, exposed to a predetermined pattern, developed, and baked at a temperature of about 480 ° C. to form a Y-directional wiring 9b. did. The wiring has a thickness of about 10 μm and a width of 50 μm.

  Step 3: Thereafter, a photosensitive glass paste containing PbO as a main component is screen-printed, exposed and developed, and then baked at a temperature of about 480 ° C., so that the element electrode 5 An interlayer insulating film having a contact hole was formed at a location corresponding to. The thickness of the interlayer insulating film is about 30 μm as a whole, and the width is 150 μm.

  Step 4: Further, an Ag paste ink is screen-printed on the insulating film and then dried. The same operation is performed again on the insulating film, followed by coating twice, and baking at a temperature of about 480 ° C. in the X direction. The wiring 9a was formed. It intersects with the Y-directional wiring 9b with the insulating film interposed therebetween, and is also connected to the element electrode 5 at a contact hole portion of the insulating film. The element electrodes 5 are connected by these wirings, and function as scanning electrodes after paneling. The thickness of the X-direction wiring is about 15 μm.

  Step 5: Further, the XY matrix substrate was slightly water-repellent to adjust the contact angle of water on the substrate surface to 65 °.

  Step 6: Thereafter, the conductive film 7 was formed using an element film forming apparatus (inkjet apparatus). The ink used was an organic palladium-containing solution (aqueous solution of palladium-proline complex 0.15 wt%, isopropyl alcohol 15%, ethylene glycol 2.0%, polyvinyl alcohol 0.05%). Droplets of this solution were applied between element electrodes by adjusting the dot diameter to 60 μm using an inkjet ejector using a piezo element as a discharge head. Thereafter, the substrate was heated and baked at 350 ° C. for 10 minutes in air to obtain palladium oxide (PdO). The average dot diameter of the obtained element film was 60 μm, and the average film thickness was 8 nm.

  Step 7: Further, a hydrophobic thin film was formed on the conductive film 7 using an apparatus similar to the above-described element film forming apparatus and using a solution containing the hydrophobic thin film as ink. As the ink used, an aqueous solution containing a small amount of isopropyl alcohol and DDS (dimethyldiethoxysilane) was used. The dot diameter was adjusted to be 65 μm. Thereafter, a heat treatment was performed at 130 ° C. for 10 minutes to obtain a hydrophobic thin film. The contact angle on the hydrophobic thin film was adjusted to be 70 ° to 80 °.

  Step 8: Next, using a spray coating device, a solution in which ultrafine particles containing tin oxide as a main component are dispersed in an organic solvent (a mixed solvent of n-butyl alcohol, ethanol, and water) is moved over the entire substrate while moving the spray nozzle. To form an antistatic film 10 through a baking process and the like. In this example, the antistatic film 10 was sprayed with an average thickness of 30 nm and a sheet resistance of 1010 Ω / □, and then heat-treated at 380 ° C. for 10 minutes to form the antistatic film 10. .

  Hereinafter, an image display device was manufactured through the same steps as in Example 1.

  The electron-emitting device manufactured as described above by the manufacturing method of the present embodiment has no leakage current due to the remaining of the element film 7 in the forming step and the remaining of the connected portion of the element film 7. Is small.

  In addition, since the insulating surface on the substrate is effectively covered with the antistatic film 10 made of a high-resistance conductive material to prevent electrification due to electron emission, the electron emission characteristics of each electron emission element are extremely stable. A stable image was displayed, no electron beam deflection occurred, and no destruction due to electric discharge was observed.

  Therefore, a good image display device can be obtained with high yield.

  An example in which the antistatic film (resistive film) of the present invention is applied to another electron source configuration arranged in a matrix will be described. Note that the configuration other than the electronic current configuration is the same as that of the first embodiment, and a description thereof will be omitted.

  11 is a plan view of the substrate surface when viewed from above, and FIG. 12 is a cross-sectional view taken along a broken line AA # in FIG. 11 and 12, 101 is a substrate glass, 102 is a common wiring electrode (scanning wiring), 103 is an interlayer insulating layer, 104a and 104b are common wiring electrodes (signal wiring), 105a and 105b are gate electrodes (lead electrodes), 106 Is a carbon nanotube as an electron emitting portion, 106a and 106b are aggregates of carbon nanotubes, 107 is an antistatic film according to the present invention, and 108 is a contact hole.

In this example, the device was manufactured as follows.
1. Using a glass substrate (PD200) 101, ITO having a thickness of 500 nm was deposited on the surface, and a scanning common wiring electrode 102 having a width of 600 μm was formed using photolithography technology.
2. Next, an interlayer insulating layer 103 containing lead oxide and silica as main components and having a thickness of about 10 μm was applied and formed through a firing step.
3. Next, a contact hole 108 having a diameter of about 150 μm was formed in the interlayer insulating layer 103 by photolithography.
4. After chromium having a thickness of about 1 μm was formed on the entire surface of the substrate by vapor deposition, common wiring electrodes (signal lines) 104a and 104b and gate electrodes (lead electrodes) 105a and 105b were simultaneously formed by photolithography. .
5. Using a printing paste material containing a carbon nanotube 106 and appropriately containing an organic material, an inorganic material, and a photosensitive organic material, an aggregate of the carbon nanotubes 106 a and 106 b serving as electron emission portions is formed in a part of 104 a and 104 b. Print formed. Thereafter, a precise shape was formed by photolithography using light transmitted from the back surface of the substrate.
6. The antistatic film was produced in the same manner as in Example 1.

  According to the method of the present invention, as can be seen from FIG. 12, the antistatic film 107 is formed between the electrodes or in the contact hole, and the connection between the horizontal surface area and the end of the electrode (conductor) is formed by another charge. Since the connection is made relatively thicker than the thickness of the prevention film, charging can be reliably prevented while suppressing power consumption.

  In particular, in the present case, the configuration of the present invention is between the electron source formation regions 106a and 106b and the gate electrodes 105a and 105b, and between the gate electrodes 105a and 105b and the signal lines 104a and 104b.

  If this device is not subjected to antistatic treatment, in order to obtain a constant electron emission current, not only the drive voltage gradually increased with time, but also the beam position fluctuated. Was able to be driven. Also, the position of the fluorescent spot by the obtained electron beam did not fluctuate over a long period of time.

  An example in which the antistatic film (resistive film) of the present invention is applied to another electron source configuration arranged in a matrix will be described. Note that the configuration other than the electronic current configuration is the same as that of the first embodiment, and a description thereof will be omitted.

  FIG. 13 is a plan layout view when the substrate surface is viewed from above, and FIG. 14 is a sectional view taken along a broken line AA # in FIG. 13 and 14, 111 is a substrate glass, 112 is a common wiring electrode (scanning wiring), 113 is an interlayer insulating layer, 114a and 114b are cathode electrodes, 115a and 115b are gate electrodes (extraction electrodes), and 116 is an electron emission portion. Certain graphite nanofibers, 116a and 116b are aggregates of graphite nanofibers, 117 is an antistatic film according to the present invention, and 118 is a common wiring electrode (signal wiring).

In this example, the device was manufactured as follows.
1. Using a glass substrate (PD200) 111, TiN having a thickness of 100 nm was deposited on the surface, and cathode electrodes 114a and 114b and gate electrodes (extraction electrodes) 115a and 115b were simultaneously formed by photolithography.
2. Common wiring electrodes (signal wiring) 118a and 118b having a thickness of about 1 μm were formed using a silver printing paste by printing and firing.
3. The interlayer insulating layers 113a and 113b having a thickness of about 20 μm were printed using a printing paste containing lead oxide and silica as main components, and formed through a firing step.
4. Using a silver printing paste, a common wiring electrode (running wiring) 112 having a thickness of about 2 μm was formed through a printing and firing process.
5. Ultrafine catalyst particles made of PdCo were dispersed and applied on the cathode electrode 114, and dry-etched with Ar to form a catalyst in a partial region of the cathode electrode.
6. Graphite nanofibers were generated at about 550 ° C. through ultrafine catalyst particles by low pressure thermal CVD using acetylene gas and hydrogen gas. As a result, cathode regions 116a and 116b composed of an aggregate of graphite nanofibers were formed. In the present case, graphite nanofibers and carbon nanotubes are different from each other because the structure of the hexagonal mesh plane of carbon is different between graphite nanofibers and carbon nanotubes.
7. Finally, an antistatic film was produced in the same manner as in Example 6.

  Also in the present configuration, the antistatic film (resistive film) between the cathode and the gate electrode, between the electrodes formed by printing, and between the cathode electrode and the printed wiring, and between the gate electrode and the printed wiring, is formed of the electrode, the wiring, etc. The connection with the conductor was thicker than in other regions.

  As a result, similar to the sixth embodiment, a result was obtained in which the increase in the driving voltage was suppressed and the fluctuation of the beam position was suppressed.

Partial bird's-eye view of the electron-emitting device of the present invention Schematic diagram of an image display device using the present invention Diagram of forming voltage waveform Partial sectional view of FIG. FIG. 8 is a view for explaining the thickness distribution of the resistance film according to the fourth embodiment. FIG. 10 is a view for explaining the film thickness distribution of the resistance film according to the fifth embodiment. The figure explaining the 1st example explaining the problem of an antistatic film The figure explaining the 2nd example explaining the problem of an antistatic film The figure explaining the 3rd example explaining the problem of an antistatic film FIG. 3 illustrates an example of an antistatic film of the present invention. FIG. 9 is a view for explaining an electron source structure according to a sixth embodiment. The figure explaining the AA 'cross section of FIG. FIG. 9 is a view for explaining an electron source structure according to a seventh embodiment. FIG. 13 illustrates a cross section taken along line AA ′ of FIG. 13.

Explanation of reference numerals

DESCRIPTION OF SYMBOLS 4 Substrate 5, 6 Device electrode 7 Conductive thin film 8 Electron emission part 9a Y direction wiring 9b X direction wiring 10 Resistive film (antistatic film)
Reference Signs List 11 conductor 12 insulating substrate 13 resistive film (antistatic film)
14 Resistive film thickness in connection region 29 Rear plate 30 Frame 31 Glass substrate 32 Fluorescent film 33 Metal back 34 Face plate 35 Image display device 101 Substrate glass 102 Common wiring electrode (scanning wiring)
103 interlayer insulating layer 104 common wiring electrode (signal wiring)
105 gate electrode 106 carbon nanotube 107 antistatic film (resistive film)
108 contact hole 111 substrate glass 112 common wiring electrode (scanning wiring)
113 interlayer insulating layer 114 cathode electrode 115 gate electrode 116 graphite nanofiber 117 antistatic film (resistive film)
118 common wiring electrode (signal wiring)

Claims (6)

  An electronic device comprising, on an insulating substrate, a conductor and a resistive film connected to the conductor, wherein the resistive film has a thicker portion in a connection region with the conductor than another region. An electronic device characterized by the above.   An electron source comprising an electron-emitting portion, a conductor electrically connected to the electron-emitting portion, and a resistive film connected to the conductor on an insulating substrate, wherein the thickness of the resistive film is An electron source having a thicker portion in the connection region than in the other region.   3. The electron source according to claim 2, wherein the electron emission section is made of a carbon nanotube.   The electron source according to claim 2, wherein the electron emission unit is made of a graphite nanofiber. A method for manufacturing an electronic device substrate, comprising:
A step of preparing a substrate having an insulating region and a conductive region on the surface,
A method of manufacturing an electronic device substrate, comprising: a surface treatment step of making a contact angle of a conductor region smaller than 80 °; and a step of forming a resistive film over a conductor region and an insulation region of a surface-treated substrate. Method.   A method for manufacturing an electronic device substrate, comprising: forming a plurality of electron-emitting devices and a plurality of porous wirings for driving the electron-emitting devices on a part of an insulating substrate; A step of applying a conductive solution on the surface of the insulating substrate on which the emission element and the porous wiring are formed so as to straddle the wiring and the surface of the insulating substrate, drying and forming a resistive film, The method of manufacturing an electronic device substrate, wherein an amount of the conductive solution applied is equal to or greater than a saturated amount of water absorption of the porous wiring.

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