JP2004198106A - High-frequency heating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency heating device of favorable usability for a user. <P>SOLUTION: In double-face cooking, food on a grill plate is scorched by a grill heater on the upper side, and scorched by a high-frequency heating body on the grill plate on the underside, while the inside of the food is heated by high frequency to be heated in shorter time. In double-face cooking, it is heated by a magnetron (S261-S265), and then it is heated by the grill heater (S266-S268). The device can thus be applied in spite of limitation of maximum capacity (breaker capacity of 15-20A) in outlets of general housing. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

  The present invention relates to a high-frequency heating device, and more particularly, to a high-frequency heating device provided with a high-frequency heating element on a surface of a heating dish that is housed in a heating chamber and on which food is placed.

  2. Description of the Related Art Conventionally, there is a high-frequency heating device that supplies a high-frequency wave to a heating chamber and heats and cooks an object to be heated in the heating chamber using the high-frequency wave. In such a high-frequency heating device, automatic cooking according to various sequences has been executed according to an operation by a user (see Patent Document 1).

In recent years, the output of high-frequency waves in the high-frequency heating device has been increased. However, in some cases, such as when the device is used at home, a problem such as a blowout of a fuse during cooking occurs, and the user is not easy to use. there were.
JP-A-63-61822

  However, in order to cause the high-frequency heating device to execute automatic cooking, the user needs to perform an operation corresponding to the automatic cooking, and the required operation is desired to be simplified as much as possible.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a high-frequency heating device that is easy to use for a user.

  A high-frequency heating device according to an aspect of the present invention includes a heating chamber that accommodates an object to be heated, a magnetron that heats the object to be heated by supplying high frequency to the heating chamber, and an object that is heated in the heating chamber. A heating unit, an input unit for receiving an input of the total time of the heating time by the heater and the heating time by the magnetron, and the heating time by the magnetron and the heating by the heater based on the total time inputted to the input unit. A heating time determining unit that determines a heating time, and a control unit that causes the magnetron and the heater to perform a heating operation for the heating time determined by the heating time determining unit are provided.

  According to the present invention, when the total time of heating is input, the heating time by the magnetron and the heating time by the heater are determined based on the total time, so that the number of information that the user needs to input is suppressed. Therefore, the high-frequency heating device can be made convenient for the user.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[1. Structure of microwave oven]
FIG. 1 is a perspective view of a microwave oven according to one embodiment of the present invention. The microwave oven 1 mainly includes a main body and a door 3. The outer shell of the main body is covered with the exterior part 4, and the main body is supported by a plurality of legs 8. In addition, an operation panel 6 is provided on the front surface of the main body so that a user can input various information to the microwave oven 1. The door 3 is configured to be openable and closable around a lower end. A handle 3 </ b> A is provided at an upper portion of the door 3. FIG. 2 is a front view of the operation panel 6, and FIG. 3 is a front view of the microwave oven 1 when the door 3 is opened.

  A body frame 5 is provided inside the body 2. A heating chamber 10 is provided inside the main body frame 5. A hole 10 </ b> A is formed at the upper right side of the heating chamber 10. The detection path member 40 is connected to the hole 10 </ b> A from outside the heating chamber 10. A bottom plate 9 is provided on the bottom surface of the heating chamber 10.

  A transparent heat-resistant glass 3B is fitted into the central portion of the door 3 so that the inside of the heating chamber 10 can be visually recognized even when the door 3 is closed. Inside the heating chamber 10 of the door 3, a resin chalk cover 3 </ b> C that fills a gap between the outer periphery of the contact surface 3 </ b> D in contact with the main body frame 5 and the main body of the door 3 is provided. The high frequency leaking from the gap between the contact surface 3D and the main body frame 5 is covered with a choke cover 3C, and is prevented from leaking outside the heating chamber 10 by a choke structure (not shown) formed in the door 3.

  The operation panel 6 is provided with a display unit 60 composed of a liquid crystal panel or the like for displaying various information, an adjustment knob 608, and various keys. The adjustment knob 608 is used when inputting various information such as numerical values.

  The warm start key 601 is operated when starting various types of cooking. The range baking key 602 is operated when the food is heated by the range baking dish 80 as described later. The favorite temperature key 603 is operated to input the desired temperature when the adjustment knob 608 is operated to cook the food to a desired temperature.

  In the microwave oven 1, automatic cooking according to various menus is possible, and by operating the keys 604 and 605, the strength of the finish can be adjusted. The grill key 606 is operated when the food in the heating chamber 10 is cooked with a heater (not shown). The deodorizing key 607 is operated when performing a deodorizing operation of the heating chamber 10.

  The microwave oven 1 can be configured such that a plurality of trays (or a range baking pan 80 described later) are placed in the heating chamber 10. The oven-stage adjustment key 609 is operated to input whether to perform oven cooking in the heating chamber 10 in one stage or two stages. The fermentation key 610 is operated when fermenting bread dough or the like. The range output key 611 is operated when changing the output of the high frequency oscillated by the microwave oven 1. The thawing key 613 is operated when the frozen food is thawed, but when operated twice, cooking for thawing the frozen sashimi is executed in the microwave oven 1. A cancel key 614 is operated when canceling a key operation during input.

  In the microwave oven 1, a microwave oven 80 (see FIG. 4) can be placed in the heating chamber 10. Further, in the heating chamber 10, rails 103, 104, 106, and 107 for supporting the microwave oven 80 are formed so as to protrude inside the heating chamber 10. The rails 103 and 104 and the rails 106 and 107 are respectively formed so as to be connected to a horizontal line.

  Concave portions 101 and 102 are formed between the rails 103 and 104 and the rails 106 and 107, respectively. The concave portions 101 and 102 are formed so as to protrude outside the heating chamber 10.

  The rails 103, 104, 106, 107 and the recesses 101, 102 can be formed, for example, by pressing a sheet metal forming the wall surface of the heating chamber 10.

  FIG. 4 is a perspective view of the stove 80. 5 and 6 are a back view and a front view of the stove 80, and FIG. 7 is a sectional view taken along the line VII-VII in FIG.

  Hereinafter, the configuration of the stove 80 will be described with reference to FIGS.

  The microwave oven 80 has an outer peripheral portion 80D, which is a plate extending horizontally in the outer periphery, and a bottom portion 80B. The outer peripheral portion 80D and the bottom portion 80B are connected by a wall portion 80E. A groove 80A is formed at an outer edge of the bottom portion 80B and at a portion connected to the wall portion 80E so as to surround the entire periphery of the bottom portion 80B.

  A high frequency heating element 81 is deposited on the back surface of the bottom portion 80B. The high-frequency heating element is a substance that generates heat by absorbing high frequency, and includes a conductive material, more specifically, a conductive material obtained by adding molybdenum to tin oxide. The thickness of the deposited film is preferably about 8 × 10 −8 m, and the resistivity is preferably about 2 to 6 (Ω / m). In FIG. 5, the surface of the high-frequency heating element 81 is hatched.

  Legs 80 </ b> C are formed at four corners on the back surface of microwave oven 80, respectively. As shown in FIG. 7, the height of the lowermost portion of the leg 80C, the lowermost portion of the bottom portion 80B (the portion corresponding to the back surface of the groove 80A), and the lowermost portion of the high-frequency heating element 81 are different from each other, They are Z, Y, and X in order from the lowest. Thus, even when the microwave oven 80 is taken out of the heating chamber 10 and placed on a mounting surface such as a table in a state where the high-frequency heating element 81 is heated to a high temperature in the heating chamber 10, Prior to the heating element 81, the leg 80C or the bottom 80B contacts the mounting surface. This can prevent the high-frequency heating element 81 from applying high heat to the mounting surface. With this configuration of the microwave oven 80, even when the microwave oven 80 is placed on the door 3 opened as shown in FIG. As a result of the choke cover 3C melting in contact with 3C, the gap between the contact surface 3D and the main body frame 5 is widened, so that it is possible to prevent the high frequency in the heating chamber 10 from leaking.

  As shown in FIG. 5, the high-frequency heating element 81 is deposited at a position separated from the end of the outer peripheral portion 80D by a distance W or more and inside the groove 80A. In order to efficiently transmit the high frequency on the heating plate 80, the distance W may be λ / 4 (１ ／ of the wavelength) or more, where λ is the wavelength of the high frequency supplied into the heating chamber 10. preferable. That is, when microwaves are oscillated as a high frequency in the microwave oven 1, the distance W is preferably set to about 3 cm or more. When the distance W is set to 5 cm, about 75% to 80% of the high frequency supplied from the magnetron 12 is absorbed by the high frequency heating element 81, and about 20% to 25% passes through the microwave oven 80. Then, it is sent above the range baking dish 80.

  FIG. 8 is a sectional view taken along the line VIII-VIII in FIG. In FIG. 8, some members are omitted for convenience.

  An infrared sensor 7 is attached to one end of the detection path member 40. The infrared sensor 7 catches infrared light in the heating chamber 10 through the hole 10A. A magnetron 12 is provided inside the exterior part 4 so as to be adjacent to the lower right of the heating chamber 10. Below the heating chamber 10, there is provided a waveguide 19 for connecting the magnetron 12 and the lower part of the main body frame 5. A rotating antenna 21 is provided between the bottom of the body frame 5 and the bottom plate 9. An antenna motor 16 is provided below the waveguide 19. The rotating antenna 21 is connected to the antenna motor 16 via the shaft 15 and rotates when the antenna motor 16 is driven.

  In the heating chamber 10, the food to be heated is placed on the bottom plate 9 or on the stove 80. The stove 80 is housed in the heating chamber 10 with the outer peripheral portion 80D supported on the rails 103, 104, 106, and 107.

  The high frequency oscillated by the magnetron 12 is supplied from the bottom of the heating chamber 10 into the heating chamber 10 while being stirred by the rotating antenna 21 via the waveguide 19. Thereby, the food in the heating chamber 10 is heated.

  In FIG. 8, the flow of the high-frequency wave supplied into the heating chamber 10 is indicated by white arrows. The size of the arrow schematically indicates the high-frequency electric field intensity. The high frequency supplied into the heating chamber 10 is absorbed by the high frequency heating element 81. Thereby, the high-frequency heating element 81 is heated, heat is supplied from the high-frequency heating element 81, and the food on the microwave oven 80 is heated. The flow of the high frequency wave in this case is shown by a large arrow below the high frequency heating element 81 in FIG.

  The high-frequency wave supplied into the heating chamber 10 transmits through the outer edge of the microwave oven 80 or passes between the microwave oven 80 and the wall surfaces of the recesses 101 and 102, and the microwave is heated. It reaches above the plate 80. As a result, the food on the microwave oven 80 is directly supplied with high frequency and heated. The flow of the high frequency wave in this case is illustrated by large arrows above and below the outer edge of the range baking dish 80 in FIG.

  In the present embodiment, a portion below the range grill 80 in the heating chamber 10 and an outer edge of the range grill 80 where the high frequency heating element 81 is not deposited (the outer edge of the bottom portion 80B, the outer peripheral portion 80D, and the wall). (A portion including the portion 80E) or the concave portions 101 and 102, a route for reaching the high-frequency wave introduced into the heating chamber from the waveguide to the upper side of the heating dish (range baking dish 80) without passing through the high-frequency heating element. Is configured. By setting the distance W (see FIG. 5) to be λ / 4 or more, the dimension of the arrival path in the direction intersecting with the traveling direction of the high frequency is made to be λ / 4 or more.

  In FIG. 8, a small arrow indicates a part of the high frequency that has not been converted into heat and has passed through the high-frequency heating element 81 above the central portion of the stove 80. Further, heaters are provided above and below the heating chamber 10 (a grill heater 51 above, and a lower heater 52 below), but are omitted in FIG.

  In the present embodiment, rails such as rails 103 and 104 and rails 106 and 107 that support the stove 80 from below are provided at intervals on the right and left sides of the heating chamber 10. It is composed of a plurality of members. As a result, compared to the case where the rail 103 and the rail 104 or the rail 106 and the rail 107 are connected and configured as a single rail extending from the near side to the far side in the heating chamber 10, the heating is performed. Since there is a large gap between the inner wall surface of the chamber 10 and the end of the microwave oven 80, it is easy to send high frequency waves above the microwave oven 80.

  Further, a convex portion 101A for microwave diffusion is provided in the concave portion 101, and a convex portion 102A for microwave diffusion is provided in the concave portion 102. The convex portions 101A and 102A have a function of diffusing the high frequency passing through the concave portions 101 and 102 into the information of the microwave oven 80.

[2. Electrical configuration of microwave oven]
FIG. 9 schematically shows an electric configuration of the microwave oven 1. The microwave oven 1 includes a control circuit 30 that controls the entire operation of the microwave oven 1. Control circuit 30 includes a microcomputer.

  In the microwave oven 1, an AC voltage from an external commercial power supply 41 is rectified by a rectifier bridge 42, and then converted into a DC voltage by a choke coil 43 and a smoothing capacitor 44. The rectifier bridge 42, the choke coil 43, and the smoothing capacitor 44 constitute a rectifier 45 for rectifying the AC voltage of the commercial power supply 41.

  The switching element 46 is composed of an IGBT (insulator gate bipolar transistor), and a freewheel diode 47 and a resonance capacitor 48 are connected in parallel between the collector and the emitter to form a resonance type switching circuit. The high-frequency transformer 54 includes a primary winding 55, a secondary winding 56, and a heater winding 57. The input DC voltage is supplied to the collector of the switching element 46 via the primary winding 55 of the high-frequency transformer 54. The switching element 46 is turned on / off by a drive signal from a drive circuit 58, and the input DC voltage is periodically switched to be converted to a high frequency. The switching element 46, the freewheel diode 47 and the resonance capacitor 48 constitute a frequency conversion device 49. The drive timing of the switching element 46 by the drive circuit 58 is controlled by the control circuit 30.

  The secondary winding 56 of the high-frequency transformer 54 is connected to a voltage doubler rectifier circuit composed of a voltage doubler rectifier capacitor 32 and a voltage doubler rectifier diode 34. The high frequency voltage generated in the winding 56 is double-voltage rectified to obtain a DC high voltage. A drive power supply unit for supplying anode power between the anode 33 of the magnetron 12 and the cathode 35 (also serving as a heater for heating the cathode; hereinafter, the same symbol is used for the heater when the heater is used) 35 is constituted by the voltage doubler rectifier circuit. Is done. The current supplied to the magnetron 12 is detected by a current transformer 37, and this detection signal is input to the control circuit 30. The anode 33 of the magnetron 12 is grounded, and the heater voltage from the heater winding 57 is supplied to the heater 35 of the magnetron 12.

  In the microwave oven 1, a door switch 3X is provided. The door switch 3X opens the circuit when the door 3 is opened, and closes the circuit when the door 3 is closed. As a result, when the door 3 is opened, supply of electric power from the commercial power supply 41 to the magnetron 12 becomes impossible. Therefore, by providing the door switch 3X, it is possible to avoid a situation where the magnetron 21 oscillates microwaves even when the door 3 is open.

  The microwave oven 1 further includes an internal lamp 53 serving as illumination in the heating chamber 10 and an oven thermistor 59 for detecting the temperature in the heating chamber 10. The control circuit 30 receives the operation contents of the key input units 601 to 614 (the adjustment knob 608 and various keys on the operation panel) and the detection output of the infrared sensor 7 and the oven thermistor 59, and receives the rotating antenna. 21 and controls the display contents of the display unit 60. Further, the control circuit 30 controls the operations of the grill heater 51, the lower heater 52, and the interior lamp 53 by appropriately driving a relay.

[3. Modification of heating chamber of microwave oven]
FIG. 10 shows a first modification of heating chamber 10 of microwave oven 1 of the present embodiment. FIG. 10 corresponds to a diagram showing a modification of the main body frame 5 and its peripheral portion in FIG. The main modification of this modification from the example shown in FIG. 8 and the like is that rails for the range grill 80 in the heating chamber 10 are provided in four stages.

  FIG. 10 shows four steps of rails 111, 112, rails 113 and 114, rails 115 and 116, and rails 117 and 118 from above in the heating chamber 10. In FIG. 10, a state is shown in which the range grilling dish 80 is disposed at the highest position set in the heating chamber 10 in which the outer peripheral portion 80 </ b> D is in contact with the uppermost rails 111 and 112. Have been.

  10, a grill heater 51 is shown in the upper part inside the heating chamber 10, and the heat radiated by the heater 51 is shown by a solid line arrow, and the high frequency oscillated by the magnetron 12 is shown by a broken line arrow. . Also in the present modification, as described with reference to FIG. 8, the high frequency supplied from the bottom of the heating chamber 10 is absorbed by the high frequency heating element 81, and transmits through the outer edge of the microwave oven 80, and It is guided above the stove 80.

  In the example shown in FIG. 10, the food on the microwave oven 80 is heated on its surface by the high frequency heating element 81, heated by directly absorbing the high frequency, and further heated by the grill heater 51. Can be browned on the surface.

  FIG. 11 is a diagram illustrating a second modification of the heating chamber 10 of the microwave oven 1. FIG. 11 is a right side view of the microwave oven 1 to show a positional relationship between the inside of the heating chamber 10 and the door 3, and shows a state in which the right side of the main body is omitted.

  A rail 108 is formed above the rails 103 and 104 on the wall surface of the heating chamber 10 in this modification. Although omitted in FIG. 11, a rail 109 (similar to the rail 109 in FIG. 25) is formed on the wall surface of the heating chamber 10 at a position facing the rail 108. The stove 80 can be supported in the heating chamber 10 by the rails 108 and 109.

  Further, in this modification, a convex portion 121 is formed below the rail 104 and toward the back of the heating chamber 10. Although not shown in FIG. 11, a protrusion 122 (see FIGS. 12 and 13) is formed on the wall surface of the heating chamber 10 at a position facing the protrusion 121.

  The convex portions 121 and 122 may be a case where a metal dish is stored in the heating chamber 10, and the microwave oven 80 may be placed when the magnetron 12 oscillates microwaves. However, in order to prohibit the microwave oscillation of the magnetron 12 only when the metal dish (the enamel dish 100) is placed on the place where the metal dish is not preferable to be placed. Is formed. In the present modification, such a place is a place on the bottom plate 9 and at a short distance (within 1 cm) from the bottom plate 9. When microwaves are supplied to the heating chamber 10 via the rotating antenna 21 while the metal dish is placed at a distance close to the bottom plate 9, discharge occurs between the rotating antenna 21 and the enamel dish 100, Because it is dangerous.

  The enamel plate 100 is a plate on which food is placed during oven cooking in which heating is performed only by heaters (the grill heater 51 and the lower heater 52), and is configured by coating a sheet metal with enamel. You.

  FIG. 12 and FIG. 13 are diagrams schematically showing a cross section of the main body of the microwave oven 1 shown in FIG. 11 at a height where the convex portions 121 and 122 are present.

  First, referring to FIG. 12, when microwave oven 80 is placed on bottom plate 9, protrusions 121 and 122 are located between the corner of oven 80 and the wall surface of heating chamber 10. That is, the stove 80 can be stored in the heating chamber 10 even if the height is the same as the height at which the protrusions 121 and 122 exist.

  On the other hand, referring to FIG. 13, when enamel plate 100, which is the above-mentioned metal plate, is placed on bottom plate 9, enamel plate 100 is brought into contact with convex portions 121 and 122 when its corners abut. As described above, the shape of the heating chamber 10 is such that it cannot be advanced to the back. That is, the enamel plate 80 is not stored in the heating chamber 10 at the same height as the height at which the protrusions 121 and 122 exist. In such a case, as shown in FIG. 11, the closing of the door 3 by the enamel plate 100 is inhibited. If the door 3 is not closed, as described above, the door switch 3X opens the circuit shown in FIG. 9, so that the magnetron 12 cannot oscillate microwaves.

  That is, in the present modification, since the convex portions 121 and 122 are formed, and the shape of the corners is different between the stove 80 and the enamel plate 100, the convex portions 121 and 122 are At the same height, the microwave oven 80 can be stored, but the enamel dish 100 cannot be stored. Regardless of the height of the stove 80 in the heating chamber 10, the stove 80 is blocked by the protruding portions 121 and 122 and cannot be housed as far as the enamel plate 100 in FIG. 11. There is no.

  As shown in FIG. 12, the stove 80 is stored in the heating chamber 10 in a state having a dimension of L1 in the depth direction and a dimension of L2 (> L1) in the width direction. .

  Further, there is a gap by a distance K with respect to the forefront portion 10X of the heating chamber 10. As a result, even when the microwave oven 80 is stored in the heating chamber 10 and the door 3 is closed, a gap of a distance K or more is generated between the microwave oven 80 and the door 3. Therefore, even when the door 3 is closed, air and microwaves below the stove 80 are easily sent above the stove 80.

  In this modification, when the microwaves are oscillated in the magnetron 12 in the heating chamber 10 by forming the convex portions 121 and 122, the microwave oven 80 can be installed, but the enamel dish 100 is not installed. There is a place where it is possible. That is, the convex portions 121 and 122 constitute the second convex portion of the present invention.

  Further, the heating chamber 10 may be configured so as to avoid the microwave oscillation of the magnetron 12 when the microwave oven 80 is placed in an unfavorable place when the microwave is oscillated. Such a modification (third modification) will be described with reference to FIGS.

  FIG. 14 is a right side view of the microwave oven 1 in which members similar to those in FIG. 11 are omitted. In this modified example, the convex portions 121 and 122 in the modified example shown in FIG. 12 are changed to convex portions 121A and 122A (see FIG. 15) that have moved to the near side in the heating chamber 10. FIGS. 15 and 16 are diagrams schematically showing a cross section of the main body of the microwave oven 1 in FIG. 14 at a height where the protrusions 121A and 122A are present.

  Referring to FIG. 15, since protrusions 121A and 122A are located on the near side in heating chamber 10 with respect to protrusions 121 and 122 (see FIG. 12), range is at the same height as protrusions 121A and 122A. When trying to store the baking dish 80, it is blocked by the protruding portions 121 </ b> A and 122 </ b> A, so that the range baking dish 80 does not reach the inside of the heating chamber 10 and the door 3 is prevented from closing. In this modification, if the enamel plate 100 is also to be stored at the same height as the convex portions 121A and 122A, the enamel plate 100 is blocked by the convex portions 121A and 122A and cannot enter the interior of the heating chamber 10 to reach the inside of the heating chamber 10. Inhibits closing.

  As described above, since L1 <L2 in the range baking dish 80, as shown in FIG. 16, the range baking dish 80 is rotated by 90 ° from the state shown in FIG. Enters the heating chamber 10 without contacting the convex portions 121A and 122A. Therefore, for such a case, it is preferable that the convex portions 123 and 124 are formed on the rear surface in the heating chamber 10. Thereby, it is possible to reliably prevent the microwave from being supplied into the heating chamber 10 by closing the door 3 in a state where the stove 80 is stored at an undesired height.

  The dimension in the depth direction of the heating chamber 10 is “L1 + K” from FIG. Therefore, in the state shown in FIG. 16, in order to prevent the door 3 from being closed by the stove 80, the protrusions 123 and 124 protrude from the rear surface of the heating chamber 10 by a distance longer than “L1 + K−L2”. Need to be.

  Next, a fourth modification of the microwave oven 1 will be described. In this modification, as shown in FIG. 17, reflectors 501 to 504 (see FIG. 19 for 501 and 502) are provided on the outer periphery of the rotating antenna 21. FIG. 17 is a cross-sectional view corresponding to the cross-sectional view of FIG.

  In this modified example, as described later, by providing the reflectors 501 to 504 on the outer periphery of the rotating antenna 21, microwaves supplied to the heating chamber 10 from the bottom surface of the heating chamber 10 via the rotating antenna 21 are provided. It is suppressed from flowing near the wall surface of the heating chamber 10 and efficiently absorbed by the high-frequency heating element 81. As a result, as shown in FIG. 18, unevenness in heating is eliminated on the stove 80.

  18A and 18B are diagrams illustrating a temperature distribution on the microwave oven 80 when microwaves are oscillated in the magnetron 12 for 3 minutes. FIG. 18A illustrates a case where the reflecting plates 501 to 504 are provided. ) Shows the case where the reflection plates 501 to 504 are not provided, respectively.

  In FIG. 18 (B), while the four corners of the range baking dish 80 have portions reaching a high temperature of about 300 ° C., the vicinity of the center of the range baking dish 80 only rises to about 100 ° C. On the other hand, in FIG. 18 (A), slightly high-temperature portions are found at the central portion and the four corners of the stove 80, but almost all regions are 150 ° C. or higher, and many portions are 175 ° C. or higher. . That is, by providing the reflection plates 501 to 504, uneven heating on the stove 80 is eliminated.

  Next, the structure and the like of the reflection plates 501 to 504 will be described in detail with reference to FIGS. FIG. 19 is a cross-sectional view taken along the line FF of FIG. 17, and FIG. 20 is a perspective view of the reflector 501.

  A lower part of the heating chamber 10 is provided with a bottom plate accommodation part 92 for accommodating the bottom plate 9 and an antenna accommodation part 91 located below the bottom plate accommodation part 92 and for accommodating the rotating antenna 21. The shape of the surface (including the cross section along the line FF shown in FIG. 19) of the antenna accommodating portion 91 intersecting with the traveling direction of the microwave has square corners rounded as shown in FIG. It is shaped.

  The reflection plate 501 has a plate-like shape having an L-shaped cross section, and the reflection plates 502 to 504 have the same structure. The reflection plates 501 to 504 are made of a material that reflects microwaves. Further, the reflection plates 501 to 504 may be configured by coating such a material.

The reflection plates 501 to 504 are arranged between the above-described square rounded corner portion and the rotating antenna 21. The places where the reflection plates 501 to 504 are arranged include the places where the distance between the end face of the rotating antenna 21 and the wall surface of the antenna accommodating portion 91 is the longest. Regarding the distance between the end face of the rotating antenna 21 and the wall surface of the antenna housing portion 91, one example of the longest one is Q1 in FIG. 19, and one example of the shortest one is Q2 in FIG. By disposing the reflection plates 501 to 504 in such a place, it is possible to prevent the microwave supplied into the heating chamber 10 via the rotating antenna 21 from diffusing to the vicinity of the wall surface of the heating chamber 10. Can be. Thus, as described with reference to FIG. 18, it is possible to suppress the supply of a large amount of microwaves to the wall portion of the heating chamber 10 and to suppress uneven heating on the stove 80.

  The reflectors 501 to 504 extend beyond the rotating antenna 21 in the direction in which the microwave travels. Specifically, in FIG. 17, the traveling direction of the microwave is considered to be upward, the height of the reflectors 501 to 504 is H1, the height of the rotary antenna 21 is H2 (<H1), and the reflector 501 to 504 exist up to a position higher than the rotating antenna 21. Thereby, the reflector 501 can reliably suppress the diffusion of the microwave guided to the heating chamber 10 via the rotating antenna 21 in the lateral direction and guide the microwave upward.

  Instead of providing the reflection plates 501 to 504, the wall structure of the antenna housing 91 may be changed as shown in FIG. 21 or FIG.

  In FIG. 21, the cross section of the antenna housing portion 91 is a circle. In FIG. 22, the cross section of the antenna accommodating portion 91 is polygonal (octagonal). As described above, since the cross section of the antenna housing portion 91 is a circle or a polygon, the distance between the end surface of the rotating antenna 21 and the wall surface of the antenna housing portion 91 is further reduced, and the antenna is supplied via the rotating antenna 21. It is possible to prevent the microwave from advancing much near the wall surface of the heating chamber 10.

  Further, a modified example in which the reflectors 501 to 504 are provided and the lower heater 52 is provided around the rotary antenna 21 will be described with reference to FIGS. FIG. 23 corresponds to a modification of FIG. 17, and FIG. 24 corresponds to a modification of FIG. The lower heater 52 is fixed in the antenna accommodating portion 91 by a fixing member 52A.

  Then, as shown in FIGS. 23 and 24, the reflection plates 501 to 504 are provided outside the rotary antenna 21 and inside the lower heater 52. Thereby, in the portion provided with the reflecting plates 501 to 504, the microwave supplied to the heating chamber 10 via the rotating antenna 21 is upwardly reflected by the reflecting plates 501 to 504 before being diffused by the lower heater 52. Sent to Thereby, the microwave is more accurately sent in the direction to be sent.

  Next, a description will be given of a modification in which microwave heating is performed in a mode that matches the height of the microwave oven 80 when the height of the microwave oven 80 in the heating chamber 10 can be changed.

  FIG. 25 is a diagram showing a fifth modification in which the microwave oven 1 is capable of storing the microwave oven 80 in the upper and lower stages in the heating chamber 10. FIG. 9 is a diagram corresponding to FIG. 8.

  The heating chamber 10 has rails 108 and 109 above the rails 103, 104, 106 and 107 to support the stove 80. The rail 109 has a left-right symmetrical shape with the rail 108 (same as that shown in FIG. 11). In this modification, the range grill 80 is supported by the rails 103, 104, 106, and 107 (indicated by solid lines in FIG. 25), is stored in the lower tier, and is supported by the rails 108 and 109. (The state shown by the broken line in FIG. 25), and stored in the upper stage. In FIG. 25, the dimension HC (the distance from the bottom surface of the antenna housing portion 91 to the rotary antenna 21) is 10 mm, the dimension HB (the distance from the rotary antenna 21 to the bottom plate 9) is 15 mm, and the dimension HA (the bottom plate) is The distance from 9 to the range grill 80 placed at the bottom is set to be １ ／ of the wavelength of the microwave.

  When heating by microwaves, the heating mode in the microwave oven 80 depends on the distance from the bottom plate 9 (the lowest surface on which an object to be heated can be placed in the heating chamber).

  Basically, it is preferable that the stove 80 on which the food is placed is stored at a position separated from the bottom plate 9 by at least 1/8 of the microwave wavelength. Thereby, uneven heating on the stove 80 can be suppressed.

  Further, as a temperature distribution on the microwave oven 80 when the microwave is supplied to the heating chamber 10 for a predetermined time after the rotation of the rotary antenna 21 is stopped, the microwave oven 80 is stored in the upper stage in FIG. FIG. 27 shows the case in which the stove 80 is stored in the lower stage. In FIGS. 26 and 27, the microwaves are supplied in the same state except for the storage position of the stove 80. In FIGS. 26 and 27, different hatchings are given for each temperature zone.

  In FIG. 26, the central portion of the stove 80 is mainly heated, and the temperature difference between the central portion and the surrounding portion is conspicuous. In FIG. 27, the temperature near the central portion is relatively high. Compared to the above, heating unevenness is suppressed.

  In the present modification, when the range grill 80 is stored in the upper stage, the rotating antenna 21 is stopped at a predetermined stop position to supply microwaves, thereby suppressing uneven heating. That is, in the present modification, the rotation of the rotary antenna 21 is stopped at a position corresponding to the position where the range grilling dish 80 is stored, so that the rotation antenna 21 is stopped on the range grilling dish 80 according to the position where the range grilling dish 80 is stored. The mode for supplying microwaves is changed so that uneven heating does not occur.

  The reason why the mode in which the microwave is supplied in the heating chamber 10 changes according to the stop position of the rotation of the rotating antenna 21 is due to the structure of the rotating antenna 21. FIG. 28 shows a plan view of the rotating antenna 21.

  The rotating antenna 21 is a disk made of metal, and has a structure in which a plurality of portions are hollowed out. A hole 210 at the center is fitted into the shaft 15 and serves as a center of rotation. Further, the rotating antenna 21 is provided with a first portion 211 extending in a strip shape from the hole 210. Since the first portion 211 has a width W1 of 35 mm, the leakage of the microwave traveling in the direction of the arrow M on the first portion 211 is suppressed as much as possible. Note that the length W2 of the first portion 211 is 65 mm. Accordingly, microwaves can be emitted relatively intensely from the tip of the first portion 211 in the M direction and the region 213.

  The rotary antenna 21 has a fan-shaped cutout from the hole 210 on the side opposite to the first portion 211. Since the distance W3 from the hole 210 to the cutout portion is 45 mm, the emission of microwaves from the regions 212A and 212B is suppressed. At the center of the fan-shaped cutout, a second portion 212 exists like a bridge connecting the center portion and the outer peripheral portion of the rotary antenna 21. Thereby, microwave emission from the outer peripheral portion of the rotating antenna 21 is promoted.

  Since the rotating antenna 21 is configured as described above, the mode in which the microwaves are supplied in the heating chamber 10 changes according to the stop position of the rotating antenna 21, thereby changing the heating mode in the microwave oven 80. I do.

  In the heating chamber 10, the stove 80 is preferably stored in the lower stage. However, depending on the cooking menu, the cooking menu may be stored in the upper stage, for example, when cooking is performed by combining heating by the grill heater 51 provided in the upper part of the heating chamber 10 and heating by microwaves. Then, in the present modification, the storage position of the stove 80 is displayed on the display unit 60 in accordance with the cooking menu to instruct the user, and the rotating antenna 21 is stopped at the stop position corresponding to the storage position. The microwave is supplied. For example, in the cooking menu in which the range grill 80 is placed in the lower stage, the microwave is supplied by stopping the rotating antenna 21 as shown in FIG. 29, and in the cooking menu in which the range grill 80 is placed in the lower stage, as shown in FIG. As shown in FIG. 29, the microwave is supplied by stopping the rotating antenna 21 while rotating the rotating antenna 21 clockwise by 90 ° from the state shown in FIG.

[4. Modification of microwave oven plate]
Next, a modification of the microwave oven 80 in the microwave oven 1 of the present embodiment will be described. First, a sixth modification will be described.

  As shown in the fifth modification example and the like, in the microwave oven 1, the height at which the stove 80 is stored in the heating chamber 10 can be changed. Further, as described with reference to FIGS. 26 and 27, when the height of the range grill 80 is changed, the temperature distribution in the range grill 80 changes. By changing the area on which the high-frequency heating element 81 is vapor-deposited according to the height at which the microwave oven 80 is stored, it is possible to suppress a change in the temperature distribution in the microwave oven 80. Specifically, the area of the microwave oven 80 on which the high-frequency heating element 81 is vapor-deposited (hereinafter, referred to as the vapor deposition area) is determined by the height of the microwave oven 80 (distance from the bottom plate 9). When the wavelength is 1/8 of the wavelength of the microwave supplied to the rotating antenna 21, the area is preferably the same as the area of the rotating antenna 21 in the horizontal direction.

  Further, as the height of the stove 80 is higher than 1/8 of the wavelength of the microwave, the deposition area is preferably larger than the horizontal area of the rotating antenna 21 (see FIG. 31). , 1/8, the vapor deposition area is preferably smaller than the horizontal area of the rotary antenna 21 (see FIG. 32).

  FIGS. 31 and 32 are rear views of the stove 80 in this modification. In FIG. 31, the position of the rotary antenna 21 overlaps the high-frequency heating element 81, is indicated by a dashed line AN, and is painted white. In FIG. 31, the area of the high-frequency heating element 81 (the above-described vapor deposition area) is larger than the area of the rotating antenna 21. On the other hand, in FIG. 32, the position of the rotary antenna 21 is indicated by a dashed line AN, and the portion overlapping the high-frequency heating element 81 is shaded with hatching indicating the high-frequency heating element 81. In FIG. 32, the area where the high-frequency heating element 81 exists is smaller than the area of the rotating antenna 21.

Next, a seventh modification of the present embodiment will be described. FIG. 33 is a back view of a range grill 80 according to the present modification. FIG. 34 is a sectional view taken along the line EE in FIG. In the range baking dish 80 of this modification, irregularities having a depth of about 5 mm are formed on the back surface, and the high-frequency heating element 81A is deposited along the irregularities on the back surface. On the front surface, high-frequency heating elements 81B to 81G are vapor-deposited only at locations corresponding to the convex portions of the irregularities on the rear surface. By mounting the food on the surface, cooking suitable for food such as okonomiyaki which is generally cooked on an iron plate can be realized. In FIG. 34, the surface on which the high-frequency heating elements 81B to 81G are deposited also looks uneven, but the thickness of the deposited film of the high-frequency heating elements 81A to 81G is
As in the case of 1, since it is about 8.times.10@-8 m, almost no irregularities are recognized when actually used.

  FIG. 35 shows a state in which the range grill 80 is turned upside down. In the state shown in FIG. 35, the food is placed on the surface having irregularities (the surface on which the high-frequency heating element 81A is deposited). By placing the food on the uneven surface, it is possible to realize cooking suitable for heating cooking of fats such as grilled meat. This is because the food itself is supported by the convex portions of the irregularities, and the fat that comes out of the food when heated is accumulated in the concave portions of the irregularities and separated from the food.

  Further, on the surface opposite to the uneven surface of the microwave oven 80, the high-frequency heating elements 81B to 81G are vapor-deposited only at locations corresponding to the convex portions of the unevenness. This is because only the portion needs to be heated to a high temperature. That is, the high-frequency heating element is prevented from being deposited on a useless portion, and the temperature that does not need to be high in a place that does not need to be heated is also prevented.

  As described above, by depositing the high-frequency heating elements in different patterns on the front and back of the microwave oven 80, different types of cooking can be performed on the front and back of the microwave oven 80.

  Further, in the present embodiment, the resistivity of the high-frequency heating elements 81, 81A to 81G is preferably set to about 2 to 6 (Ω / m) by adjusting the thickness. This will be described with reference to FIG. FIG. 36 shows the resistivity of the high-frequency heating element when microwaves were supplied to the heating chamber 10 when a conductive material obtained by adding molybdenum to tin oxide was used as the high-frequency heating element in the microwave oven 80. FIG. 5 is a diagram showing a relationship between the electric field intensity reflected by the range grill 80 and the electric field intensity transmitted therethrough.

  From FIG. 36, when the resistivity of the high-frequency heating element is about 2 to 6 (Ω / m), the electric field strength of the microwave reflected by the microwave oven 80 and the electric field strength of the microwave transmitted by the microwave oven 80 are different. It will be the same amount. Therefore, in such a case, heating cooking using the stove 80 becomes efficient.

[5. Example of cooking process in microwave oven]
With reference to FIGS. 37 to 53, the heating and cooking process in microwave oven 1 of the present embodiment will be described. First, a description will be given based on FIGS. 37 and 38 which are flowcharts of the heating cooking process.

  After performing the initial setting in S1, the control circuit 30 selects cooking in which cooking is to be performed by heating the food with the microwave oven 80 and manually inputs the preheating temperature and the cooking time in S2. Is determined. Note that this determination is specifically made by determining whether or not the range burning key 602 has been pressed twice within a predetermined time. If it is determined that manual range grilling has been selected, the preheating temperature and cooking time are set in S3 as input by the user using the adjustment knob 608, and the process proceeds to S5. In microwave cooking, two stages are set for microwave heating by the magnetron 12. These two stages are called a first stage and a second stage. In S3, the input cooking time is processed in a predetermined manner, so that the cooking time of each of the first stage and the second stage is set. When shifting from the first stage to the second stage, as described later, a buzzer is notified once, and the user is instructed to turn over the food on the stove 80.

  On the other hand, if it is determined in step S2 that manual range grilling cooking has not been selected, in step S4, automatic range grilling is performed in which food is heated by the microwave oven 80, and the preheating temperature and cooking time are automatically determined. It is determined whether cooking has been selected. Note that this determination is specifically made by determining whether or not the range burning key 602 has been pressed only once within a predetermined time. Then, if it is determined that the automatic range grilling cooking has been selected, the process proceeds to S5 as it is. If it is determined in S4 that automatic range grilling has not been selected, the process proceeds to S12.

  It should be noted that the setting of the preheating temperature and the cooking time in S3 when the automatic range grilling is selected is because the preheating temperature and the cooking time are predetermined in the automatic range grilling. is there.

  In S5, the control circuit 30 waits for an operation for starting heating (warm pressing of the start key 601), and advances the processing to S6.

  In S6, the control circuit 30 starts driving the magnetron 12, and performs pre-heat treatment in S7. Thereby, the high-frequency heating elements 81 (81A to 81G) of the microwave oven 80 are heated, and the microwave oven 80 is preheated.

  When the pre-heat treatment in S7 is completed, the control circuit 30 stops driving the magnetron 12 in S8 and notifies the end of the pre-heat treatment by a buzzer or the like. Then, in S9, after waiting for an operation for starting heating, the process proceeds to S10. At the end of the preheat treatment in S8, a notification that the range baking dish 80 is at a high temperature is also given. This is because the range baking dish 80 becomes hot in a relatively short time, so that the user can sufficiently recognize that the range baking dish 80 is hot.

  In S10, the control circuit 30 executes the range grilling cooking process, and when the process is completed, notifies the process in S11 and returns the process to S2.

  On the other hand, in S12, the control circuit 30 determines whether or not manual double-sided baking cooking is selected, in which cooking is to be performed by heating the food by the grill heater 51 and the stove 80, and the cooking time is manually input. I do. Note that this determination is specifically made by determining whether or not the grill key 606 has been pressed twice within a predetermined time. If it is determined that manual double-sided cooking has been selected, in S13, the cooking time is set as input by the user using the adjustment knob 608, and the process proceeds to S19. In manual double-sided baking cooking and double-sided baking cooking described below, two stages are set, a first stage that is microwave heating by the magnetron 12 and a second stage that is heating by the grill heater 51.

  On the other hand, when it is determined in S12 that manual range grilling cooking has not been selected, in S14, cooking in which food is heated by the grill heater 51 and the range grilling plate 80 and the cooking time is automatically determined. It is determined whether double-sided baking is selected. This determination is specifically made by determining whether or not the grill key 606 has been pressed only once within a predetermined time. If it is determined that the automatic double-sided cooking has been selected, the cooking time (first stage, second stage, respective cooking time) corresponding to the cooking course is read out and set in S15, and the process proceeds to S19. Note that the cooking course is a course corresponding to the cooking course number selected by the user turning the adjustment knob 608 on the operation panel 6 after the automatic double-sided baking is selected.

  In S19, the control circuit 30 waits for an operation for starting heating (pressing the start key 601), and advances the processing to S20.

  In S20, the control circuit 30 calculates a preheating time from the cooking time set in S13 or S15, and proceeds to S21. The calculation of the preheating time is performed according to a predetermined mode. The preheating time is set such that the preheating time is 3 minutes if the cooking time is less than 5 minutes, and the preheating time is 5 minutes if the cooking time is 5 minutes or more and less than 10 minutes. Is calculated.

  In S21, the control circuit 30 starts driving of the magnetron 12, and when it is determined in S22 that the preheating time has elapsed, in S23, the driving of the magnetron 12 is stopped, and in S24, the preheating treatment is ended. Is notified by a buzzer or the like. Then, in S25, after waiting for an operation for starting heating, the process proceeds to S26.

  In S26, the control circuit 30 executes the double-sided baking cooking process, and when it is completed, notifies the process in S27 and returns the process to S2.

  On the other hand, in S16, the control circuit 30 determines whether or not other cooking has been selected. The other cooking is, for example, defrosting cooking when the defrosting key 613 is pressed. When it is determined that such cooking is selected, the cooking time is set as input by the user in S17, and after the cooking is performed for the cooking time in S18, the process returns to S2. On the other hand, if it is determined in S16 that such other cooking is not selected, the process returns to S2.

  Next, the pre-heat treatment will be described with reference to FIGS. FIG. 39 is a flowchart of a subroutine of the preheat treatment in S7.

  In the pre-heat treatment, the control circuit 30 first starts counting of the counter t in S701.

  Next, in step S702, an output setting A process is executed. The content of the output setting A process will be described with reference to FIG.

  In the output setting A process, the control circuit 30 first detects the temperature Ti of the inverter (frequency conversion circuit 49) in S7020.

  Next, in S7021, it is determined whether or not a timer ta described later is counting. In the preheating control A process described below, the timer ta is defined as Tcave (the detected temperature of which is the average temperature within the scanning range detected by the infrared element that is the target of the preheating control) is changed from Tcave1 (predetermined temperature). This is a timer for measuring the time required to change to Tcave2 (a predetermined temperature higher than Tcave1). Then, if the timer ta is counting, the process proceeds to S7025; otherwise, the process proceeds to S7022.

  In S7022, the control circuit 30 determines whether or not Ti detected in S7020 is less than a predetermined value Ti1. Then, if Ti is less than Ti1, the process proceeds to S7023; otherwise, the process proceeds to S7025.

  In S7025, it is determined whether or not the Ti detected in S7020 is less than a predetermined value Ti2 (> Ti1). If it is less than Ti2, the process proceeds to S7026; otherwise, the process proceeds to S7028.

  When the process proceeds to S7023, the control circuit 30 sets the output P of the magnetron 12 to P1, sets the maximum preheating time tmax to tmax1 in S7024, and returns. The maximum preheating time is a time at which the preheating is completed when this time elapses after the start of the preheating, regardless of the temperature detected by the infrared sensor 7 at that time.

  When the process proceeds to S7026, the control circuit 30 sets the output P of the magnetron 12 to P2, and further returns the maximum preheating time tmax to tmax2 in S7027.

  When the process proceeds to S7028, the control circuit 30 sets the output P of the magnetron 12 to P3, and further returns the maximum preheating time tmax to tmax3 in S7029.

  The output of the magnetron 12 is P1> P2> P3. Therefore, as the temperature of the inverter, which is considered to have the largest temperature rise when the magnetron 12 is driven in the microwave oven 1, is higher, the output of the magnetron 12 is suppressed.

  If ta is not counting, the output of the magnetron 12 is set to P1 when “Ti <Ti1”, and the output of the magnetron 12 is set to P2 when “Ti1 ≦ Ti <Ti2 or more”. On the other hand, if ta is counting, the output of the magnetron 12 is set to P2 in both cases. Thus, in the present embodiment, the condition for changing the output of the magnetron 12 is relaxed when ta is counting compared to when ta is not counting, and the output of the magnetron 12 is set to be not changed as much as possible. Have been.

  Further, tmax1 to tmax3 of the maximum preheating time can be different values. Thus, in the present embodiment, the maximum preheating time can be determined according to the output of the magnetron 12.

  Referring again to FIG. 39, next to the output setting A processing in S702, the control circuit 30 causes the oven thermistor 59 to detect the temperature Tth in the heating chamber 10 in S703, and further outputs the preheating holding output Px. calculate. The preheating holding output Px is obtained according to a function f (x) of the preheating temperature x set in S3 or the like. Note that f (x) is predetermined. It should be noted that Px is an output for maintaining the temperature of the range grill 80, and therefore PxＰP3 <P2 <P1.

  Next, in S704, the control circuit 30 executes a dish temperature detection process. The details of the dish temperature detection process will be described with reference to FIG.

  In the dish temperature detection process, the control circuit 30 first moves each infrared detection element of the infrared sensor 7 to the initial position in S7041. Here, an area for temperature detection by the infrared detecting element in the infrared sensor 7 will be described.

  The infrared sensor 7 according to the present embodiment includes eight infrared detecting elements. When each of the eight elements is an element n (n = 1 to 8), the temperature detection area ARn of the element n may be indicated as AR1 to AR8 on the range grill 80 as shown in FIG. it can. In FIG. 42, 8 × 16 intersections in the case where eight lines A to H are drawn in the horizontal direction and 16 lines 0 to 15 are drawn in the depth direction on the range grill 80 As shown, AR1 to AR8 each include 16 points in the depth direction. In the infrared sensor 7, scanning is performed such that the element n sequentially detects the temperatures of 16 points included in AR1 to AR8 and arranged in the depth direction. The initial position in S7041 is, for example, a position at which the temperature of each element is detected on the 0-line in the depth direction.

  Referring to FIG. 41 again, next, in S7042, the control circuit 30 causes the infrared sensor 7 to scan such that each element detects the temperature at 16 points in each of the areas AR1 to AR8.

  Next, in S7043, the control circuit 30 calculates the average temperature Tdnave and the maximum temperature Tnmax in the temperature detection of the sixteen points in S7042 of each element of the infrared sensor 7.

  Then, in S7044, it is determined whether an element to be subjected to preheating control has been determined among the eight infrared detection elements. This determination is made in SA7, SA13, or SA14 described later. If it has already been determined, in S7045, the average (Tcave) of the temperatures at the detected points of the target element is calculated, and the process returns. On the other hand, if such an element has not yet been determined, the process returns.

  Referring again to FIG. 39, after the process of S704, the control circuit 30 replaces the Tdnave detected in the dish temperature detection process executed immediately before in S705 with Tdnave0 (eight “n” in “n”). Td1ave0 to Td8ave0 exist because a number for recognizing any one of the infrared detection elements is entered, and "0" means the first scan).

  Next, in S706, the control circuit 30 determines whether or not the Tth detected in S703 is less than a predetermined value Tth1, and if it is less than Tth1, the process proceeds to S707. Proceed to S708.

  In S707, the control circuit 30 determines whether or not the maximum value of Tdave0 is less than a predetermined value Tdave1, and if it is less than Tdave1, the process proceeds to S709, and if it is more than Tdave1, the process proceeds to S710. Proceed to

  On the other hand, in S708, the control circuit 30 determines whether or not the maximum value of Tdave0 is less than the predetermined value Tdave2. If the maximum value is less than Tdave2, the process proceeds to S711. Is advanced to S712.

  Then, the control circuit 30 executes the preheating control A process, the preheating control B process, the preheating control C process, and the preheating control D process in S709, S710, S711, and S712, respectively, and returns.

  The contents of the preheating control A process will be described with reference to FIG.

  In the preheating control A process, first, in SA1, the control circuit 30 determines whether or not the cooking menu currently operated in the microwave oven 1 is a menu stored in the lower part (see FIG. 25) in the heating chamber 10. Judge. In addition, in the microwave oven 1, the user can be presented with a stage for storing the stove 80 for each cooking menu. If the menu is stored in the lower row, the process proceeds to SA2, and if the menu is to be stored in the upper row, the process proceeds to SA14.

  In SA2, the control circuit 30 determines whether or not the latest maximum value of Tnmax is less than a predetermined value Tnmax1, and if it is less than Tnmax1, advances the process to SA3; if it is more than Tnmax1, SA13. Processing proceeds.

  In SA3, the control circuit 30 executes an output confirmation process. Here, the contents of the output confirmation processing will be described with reference to FIG.

  In the output confirmation process, the control circuit 30 first executes an output setting A process in SE1. The output setting A process is the process described with reference to FIG.

  Next, the control circuit 30 determines whether or not the output P of the magnetron 12 has been changed in the output setting A process executed immediately before, and returns without any change. On the other hand, if there is a change, the process proceeds to SE3.

  In SE3, the control circuit 30 determines whether or not the output after the change is P3. If the output is P3, the control circuit 30 returns as it is. If the output is changed to other than P3, the process proceeds to SE4.

  In SE4, control circuit 30 determines whether or not preheating time tn has already been determined. If it is determined, the process proceeds to SE5, and if it is not determined, the process returns.

  In SE5, the control circuit 30 changes the preheating time tn according to the change in the output of the magnetron 12, and returns. The preheating time tn after the change (tn [after the change]) is, specifically, the output of the magnetron 12 before and after the change, the preheating time tn before the change (tn [before the change]), and And it is calculated using the count value of the timer t which started counting in S701.

  Referring again to FIG. 43, when the output confirmation processing in SA3 is completed, next, in SA4, control circuit 30 executes a dish temperature detection processing. The dish temperature detection process is the process described with reference to FIG.

  Next, the control circuit 30 performs an error detection process in SA5.

  Here, the content of the error detection processing will be described with reference to FIG.

  In the error detection process, first, in SF1, the control circuit 30 determines whether or not the count value of the timer t that started counting in S701 is a predetermined value te1. If it is te1, the process proceeds to SF2; otherwise, the process proceeds to SF6.

  In SF2, the control circuit 30 determines whether or not the output P of the magnetron 12 is P1. If it is P1, the process proceeds to SF3, and if it is not P1, the process proceeds to SF4.

  In SF4, the control circuit 30 determines whether or not the output P of the magnetron 12 is P2. If it is P2, the process proceeds to SF5, and if it is not P2, the process returns.

  In SF3, threshold values for determining that an error has occurred in the microwave oven 1 with respect to the temperature rise values ΔT1 and ΔT2 in the microwave oven 80 are set to Ta and Tb, respectively, and the process proceeds to SF11. In SF5, threshold values for the above-mentioned temperature rise values ΔT1 and ΔT2 are set as Tc and Td, respectively, and the process proceeds to SF11. That is, here, the threshold value for the temperature rise value in the range grill 80, which is a reference for determining an error, can be set to a different value according to the output of the magnetron 12.

  On the other hand, in SF6, it is determined whether or not the count value of the timer t is a predetermined value te2. If it is te2, the process proceeds to SF7; otherwise, the process returns.

  In SF6, the control circuit 30 determines whether or not the output P of the magnetron 12 is P1. If it is P1, the process proceeds to SF8, and if it is not P1, the process proceeds to SF9.

  In SF9, the control circuit 30 determines whether or not the output P of the magnetron 12 is P2. If it is P2, the process proceeds to SF10, and if it is not P2, the process returns.

  In SF8, the thresholds for determining that an error has occurred in the microwave oven 1 with respect to the temperature rise values ΔT1 and ΔT2 in the microwave oven 80 are set to Te and Tf, respectively, and the process proceeds to SF11. In SF10, thresholds for the above-mentioned temperature rise values ΔT1 and ΔT2 are set as Tg and Th, respectively, and the process proceeds to SF11. That is, also here, the threshold value for the temperature rise value in the range grill 80, which is a criterion for error determination, can be set to a different value according to the output of the magnetron 12. Also, in comparison with the processing of SF3 and SF5, in this error detection processing, different thresholds are set depending on the time (te1 or te2) in which the processing is performed.

  In SF11, the control circuit 30 determines whether or not the maximum value of “Tnmax−Tnmax0” is less than ΔT1. Note that “Tnmax−Tnmax0” is a rise value of the maximum value of the detection temperature of each infrared detection element from the maximum value of the first detection. The maximum value of “Tnmax−Tnmax0” is the maximum value among the rising values of the eight elements.

  If the maximum value of “Tnmax−Tnmax0” is less than ΔT1, error notification is performed in SF15 and the pre-heat treatment is stopped. Thereby, for example, when the temperature rise value of microwave oven 80 is smaller than the expected range, or when each element of infrared sensor 7 cannot detect the temperature normally, the pre-heat treatment can be stopped.

  On the other hand, when the maximum value of “Tnmax−Tnmax0” is equal to or more than ΔT1, the control circuit 30 proceeds to SF12.

  In SF12, the control circuit 30 determines whether or not the cooking menu operated in the microwave oven 1 is a menu for storing the stove 80 in the lower part of the heating chamber 10. If the menu is stored in the lower row, the process proceeds to SF13. If the menu is stored in the upper row, the process proceeds to SF14.

  In S13, the control circuit 30 determines whether or not the minimum value of “Tnmax−Tnmax0” is less than ΔT2. If the minimum value of “Tnmax−Tnmax0” is less than ΔT2, error notification is performed in SF15, and the pre-heat treatment is stopped.

  On the other hand, in S14, the control circuit 30 determines whether or not the minimum value of “Tnmax−Tnmax0” is equal to or more than ΔT2. If the minimum value of “Tnmax−Tnmax0” is equal to or more than ΔT2, error notification is performed in SF15 to stop the pre-heat treatment, and if less than ΔT2, the process returns as it is.

  In the processing of SF12 to SF14 described above, the mode of determination of an error differs depending on the height of the stove 80 stored. This is because, as shown in FIG. 46, if the height of the stove 80 is different, the area included in the visual field range QA of each infrared detecting element of the infrared sensor 7 on the stove 80 is different. It is. FIG. 46A shows a state in which the stove 80 is stored in the upper part, and FIG. 46B shows a state in which the stove 80 is stored in the lower part. When the range grill 80 is stored in the lower row as shown in FIG. 46 (B), almost the entire area of the range grill 80 is included in the viewing range QA, but is stored in the upper row as shown in FIG. 46 (A). Then, the range of the range baking dish 80 that is not included in the visual field range QA increases. Then, in SF 14, it is determined whether or not the temperature detection by the infrared detection element can follow the temperature rise of the range pan 80 by determining whether or not the detection temperature of the infrared detection element has sufficiently increased. . When it is determined that the pre-heat treatment cannot be followed, an error notification is performed and the pre-heat treatment is terminated.

  In the microwave oven 1, the scanning range of each infrared detecting element may be changed by changing the angle of the infrared sensor 7 according to the height of the stove 80 in the heating chamber 10. preferable. Further, when a preferable storage height of the stove 80 is set for each cooking menu in the microwave oven 1, such a change of the scanning range is performed according to the selected cooking menu. In the above-described error detection process, when the storage position of the range grill 80 is not in accordance with the scanning range of the infrared detection element, the temperature detection by the infrared detection element cannot follow the temperature rise of the range grill 80. , An error notification is performed. In other words, in the error detection process, by changing the scanning range, the stored height of the range grill 80 can be detected, and the range grill 80 can be set to a preferable height for each cooking menu. Even when not stored, error notification can be performed. Since error notification is performed in such a case, it is necessary for the error notification to make the user recognize that there may be an error in the storage position of the stove 80.

  In the error detection processing, if the degree of temperature rise is not the predetermined degree, an error notification is performed. Note that the manner of temperature rise varies depending on the material of the dish stored in the heating chamber 10. In other words, in the error detection processing, not only the storage position of the range grilling dish 80 but also whether the material of the range grilling dish 80 is normal, that is, the range grilling dish 80 and another dish are incorrectly stored in the heating chamber 10. Whether or not it is also subject to error notification.

  When the high-frequency heating element 81 is vapor-deposited only on a part of the microwave oven 80, it is preferable that the scanning range of the infrared detecting element is limited to the area where the high-frequency heating element 81 is vapor-deposited. This eliminates the need for temperature detection in places where temperature detection is not necessary, so that temperature detection by the infrared sensor 7 can be performed efficiently.

  Further, from the viewpoint of omitting temperature detection for a place where temperature detection is not necessary, it is preferable that the scanning range of the infrared detecting element is changed according to the cooking menu. For example, when performing stew cooking, only the central portion of the heating chamber 10 is scanned, or the temperature of the entire heating chamber 10 is detected at the start of heating to determine the food placement position. Only the mounting position is scanned, or the user inputs the food mounting position, and only the mounting position is scanned.

  Referring again to FIG. 43, if the pre-heat treatment is not stopped in the error detection processing of SA5, control circuit 30 determines whether the latest maximum value of Tnmax is equal to or greater than predetermined value Tnmax2 in SA6. Judgment is made, and if it is not less than Tnmax2, the process proceeds to SA7, and if less than Tnmax2, the process is returned to SA3.

  In SA7, the control circuit 30 calculates “Tnmax−Tdnave0” for the eight infrared detection elements, and removes the four infrared detection elements excluding the upper two and the lower two of the size and performs preheating control. The process proceeds to SA8 as a target element.

  On the other hand, in SA13, the control circuit 30 proceeds to SA8 with the element determined as the default A among the eight infrared detection elements as a target element of the preheating control. Thereby, for example, when it is difficult to determine the target element of the preheating control due to, for example, a high temperature of the range grill 80, the predetermined element is set as the target element of the preheating control.

  In SA15, the control circuit 30 proceeds to SA8 with the element determined as the default B among the eight infrared detection elements as a target element of the preheating control. Thus, as shown in FIG. 46A, an element that is considered to be appropriate when the range grill 80 is unlikely to enter the visual field range QA of the infrared detection element is set as a target element of the preheating control.

  In SA8, the control circuit 30 executes the output confirmation processing (see FIG. 44), then executes the dish temperature detection processing (see FIG. 41) in SA9, and executes the error detection processing (see FIG. 45) in SA10. .

  If the pre-heat treatment is not stopped in the error detection process of SA10, the control circuit 30 determines in step SA11 that Tcave (the average temperature in the scanning range detected by the target element of the preheating control) is Tcave1 (the predetermined temperature). ) Is determined. Then, the control circuit 30 repeats the processing of SA8 to SA10 until Tcave reaches Tcave1, and advances the processing to SA12 when Tcave reaches Tcave1.

  In SA12, the count of the timer ta is started, and the process proceeds to SA15.

  In SA15, the control circuit 30 executes the output confirmation process (see FIG. 44), then executes the dish temperature detection process (see FIG. 41) in SA16, and executes the error detection process (see FIG. 45) in SA17. .

  Then, in the error detection processing of SA17, if the pre-heat treatment is not stopped, the control circuit 30 determines whether Tcave has reached Tcave2 (predetermined temperature) in SA18. Then, the control circuit 30 repeats the processing of SA15 to SA17 until Tcave reaches Tcave2, and when Tcave reaches Tcave2, terminates the count of the timer ta in SA19, determines the preheating time t1, and proceeds to SA20. Proceed to The preheating time t1 is obtained from a function f2 (x, ta) of the preheating temperature x and the count value of the timer ta. Note that the function f2 (x, ta) is predetermined.

  In the present embodiment, since the preheating time t1 is determined based on the function f2 (x, ta), it is not necessary for the infrared detecting element to detect the temperature as high as the preheating temperature x. Cost can be reduced. The reason why t1 can be determined based on the preheating temperature x and the count value of ta will be described with reference to FIG.

  FIG. 47 is a diagram showing a time change of Tcave from the start of the pre-heat treatment. Note that TM in FIG. 47 is the upper limit temperature at which the infrared detecting element can perform temperature detection, and x is the preheating temperature. Further, Tcave changes as shown by a solid line.

  When the pre-heat treatment is started, Tcave rises to TM, and becomes constant at Tcave even if the temperature of the stove 80 further rises. Then, by assuming an extension of the line extending from Tcave1 to Tcave2 (indicated by a dashed line), a time t1 at which the stove 80 reaches the preheating temperature x can be estimated. In addition, as each example of x, TM, Tcave2, and Tcave1, 200 degreeC, 140 degreeC, 110 degreeC, and 70 degreeC are mentioned, for example.

  Referring again to FIG. 43, after the processing of SA19, the control circuit 30 executes the output confirmation processing (see FIG. 44) in SA20, and then in S21, the count value of the timer t which started counting in S701. Is determined, the process of SA20 is executed until the count value reaches the preheating time t1 or the maximum preheating time tmax, and when the count value reaches the preheating time t1 or the maximum preheating time tmax, the process returns.

  Next, details of the preheating control B process (FIG. 39) in S710 will be described with reference to FIG. 48.

  In the preheating control B process, the control circuit 30 first sets the preheating time t2 to f3 (x) which is a function of the preheating temperature x in SB1, and sets the output of the magnetron 12 to the preheating holding output Px set in S703 in SB2. At SB3, the output setting B process is executed. Here, the details of the output setting B process will be described with reference to FIG.

  In the output setting B process, the control circuit 30 first detects the inverter temperature Ti in SG1, and determines whether Ti is lower than Ti2 (predetermined temperature) in SG2. If Ti is less than Ti2, the process returns as it is. If Ti is equal to or greater than Ti2, the process returns to SG3 with the output P of the magnetron 12 set to P3 and the preheating time tn set to tmax3.

  Referring again to FIG. 48, after the process of SB3, control circuit 30 determines whether or not the count value of timer t, which has started counting in S703, has reached preheating time t2. Then, the output setting B process of SB3 is executed until the count value of the timer t reaches the preheating time t2, and the process returns when the count value of the timer t reaches the preheating time t2.

  The preheating control B process described above is performed when the temperature of the heating chamber 10 detected by the oven thermistor 59 is relatively low and the microwave oven 80 is relatively high, as shown in FIG. Since the heat treatment is performed, the output of the magnetron 12 is reduced in the pre-heat treatment, and the contents are such that the temperature of the microwave oven 80 naturally waits for convergence.

  Next, the details of the preheating control C process executed in S711 will be described with reference to FIG. The preheating control C process is a process executed when the temperature of the heating chamber 10 is relatively high and the temperature of the stove 80 is relatively low, as shown in FIG. . In the preheating control C process, the control circuit 30 first sets a preheating time t3 based on a preheating temperature x and a function f4 (x, Tth) of the temperature of the heating chamber 10 detected by the oven thermistor 59 in SC1. In SC2, output confirmation processing (see FIG. 44) is executed. Then, in SC3, the process of SC2 is repeated until the count value of the timer t reaches the preheating time t3, and the process returns when the count value of the timer t reaches the preheating time t3.

  Table 1 partially shows an example of the function f4 (x, Tth).

  f4 (x, Tth) defines a preheating time for each preheating temperature zone. F4 (x, Tth) defines two temperature ranges “Tth (low)” and “Tth (high)” using a predetermined threshold value for the detected temperature Tth of the oven thermistor 59, and Defines the preheating time.

  Next, details of the preheating control D process executed in S712 will be described with reference to FIG.

  In the preheating control D process, the control circuit 30 first sets the preheating time t4 according to f5 (x) which is a function of the preheating temperature x in SD1, sets the output of the magnetron 12 to P2 in SD2, and sets the output in SD3. The B processing (see FIG. 49) is executed. Then, in SD4, the process of SD3 is repeated until the count value of the timer t reaches the preheating time t4, and the process returns when the count value of the timer t reaches the preheating time t4.

  In the pre-heat treatment described above, since the maximum pre-heat time is set, even if a problem occurs in the infrared detection element, the pre-heat treatment is automatically terminated. In addition, the number of elements to be subjected to the preheating control is four out of the eight infrared detection elements, but is not limited to this.

  In the preheating process of the present embodiment, when it is determined in S706 that the temperature of the heating chamber 10 detected by the oven thermistor 59 exceeds a predetermined temperature, the preheating control C process or the preheating control D process is performed. Control for driving the magnetron 12 for a predetermined time is performed. If it is determined in step S706 that the temperature of the heating chamber 10 detected by the oven thermistor 59 exceeds a predetermined temperature, in step S707, a process according to the detection output of the infrared detection element of the infrared sensor 7 is selected. Has been done. Further, the branch from the preheating control A processing to the preheating control D processing is based on the detection temperature of the oven thermistor 59, and the output of the magnetron 12 in each of the preheating control A processing to the preheating control D processing. Has been determined. For example, when the process proceeds to the preheating control D process, if the temperature of the inverter does not reach Ti2 or higher, the output of the magnetron 12 is set to P2. Thus, in the present embodiment, the temperature of the heating chamber 10 is also a factor that determines the output of the magnetron 12.

  Further, in the pre-heat treatment of the present embodiment, in S707 and S708, after Tdave0 (the eight infrared detection elements of the infrared sensor 7 start heating by the magnetron 12, scanning for detecting the temperature in the heating chamber 10 is performed first). The maximum value of the average temperature detected at the time of performing is compared with a predetermined value (Tdave1 or Tdave2), and according to the result, in S709 to S712, different preheating times in preheating control A to preheating control D are performed. Is set. That is, the preheating time is determined according to the temperature of the range grill 80 at a predetermined timing after the magnetron 12 oscillates the high frequency. The temperature to be determined in S707 or S708 may be the temperature immediately before the magnetron 12 oscillates a high frequency, instead of the maximum value of Tdnave0.

  Next, the details of the range grilling cooking process (see FIG. 37) in S10 will be described with reference to FIG.

  In the range grilling cooking process, the control circuit 30 first starts driving the magnetron 12 in S101, and waits for the elapse of the cooking time of the first stage in S102. Then, when the cooking time of the first stage elapses, in S103, the driving of the magnetron 12 is stopped, and the end of the first stage is notified by a buzzer or the like. At this time, as described above, an instruction to turn over the food on the stove 80 is presented on the display unit 60 or the like.

  Then, the control circuit 30 waits for an operation for starting heating in S104, and then resumes the driving of the magnetron 12 in S105.

  Then, in S106, the control circuit 30 waits until the cooking time of the second stage elapses, and when the cooking time of the second stage elapses, stops the driving of the magnetron 12 in S107, and returns.

  In the range baking cooking process described above, the cooking time of the second stage, which is the cooking after turning over the food, is shorter than the cooking time of the first stage, which is the cooking before turning over, in order to improve the finish of the food. Is preferred.

  It is preferable that the output of the magnetron 12 be temporarily increased immediately after the driving of the magnetron 12 is restarted in S105, that is, immediately after the cooking of the second stage is started. This is because the magnetron 12 is temporarily stopped during the processing of S103 to S104, and it is considered that the temperature of the heating chamber 10 and the range grill 80 is lowered.

  Further, even during the execution of the range grilling cooking process and the double-side grilling cooking process, the output of the magnetron 12 can be reduced when the temperature of the inverter becomes high, as in the case of the preheat treatment. When the output of the magnetron 12 is reduced in the first stage, it is preferable to lengthen the cooking time of the second stage in order to compensate for the reduced output.

  Further, the microwave oven 1 is configured to reduce the output of the magnetron 12 when the temperature of the inverter becomes high, and even if the condition for reducing the output is satisfied, the cooking time is reduced. If the remainder is small, the output may not be reduced.

  Next, the details of the double-sided baking cooking process (see FIG. 38) in S26 will be described with reference to FIG.

  In the double-sided grilling process, the control circuit 30 first drives the magnetron 12 in S261, and determines in S262 whether manual double-sided grilling is currently selected. When it is determined that the manual double-sided baking is selected, in S263, the cooking time of the first stage and the cooking time of the second stage are determined in advance in accordance with the cooking time set in S13. And the process proceeds to S264. On the other hand, if it is determined in S262 that manual double-sided baking is not selected, the process directly proceeds to S264.

  In S263, the cooking time of the first stage and the cooking time of the second stage are automatically determined, so that the user can perform an appropriate double-sided baking cooking process on the microwave oven 1 only by inputting the entire cooking time. Can be executed.

  In S264, the process proceeds to S265 after waiting for the cooking time of the first stage to elapse. In S265, the driving of the magnetron 12 is stopped, and then the driving of the grill heater 51 is started. Then, in S267, after the cooking time of the second stage elapses, the process proceeds to S268.

  In S268, the driving of the grill heater 51 is stopped, and the process returns.

  In the double-sided baking cooking described above, the food on the microwave oven 80 is browned by the grill heater 51 on the upper surface, and is browned by the high-frequency heating element 81 of the microwave oven 80 on the lower surface. In addition, since the inside of the food is heated by the high frequency, heating for a shorter time can be realized. It is more preferable to drive the magnetron 12 and the grill heater 51 at the same time. However, due to the limitation of the maximum capacity of an ordinary household outlet (breaker capacity is 15 to 20 A), high-frequency heating and heater heating as in the above-described embodiment are performed. And execute separately to realize cooking.

  In the heating chamber 10 of the microwave oven 1, as shown in FIG. 10, FIG. 17, etc., the installation position of the stove 80 can be selected from a plurality of stages. In the cooking in which the surface of the food is browned by the food 51, the stove 80 is preferably installed at a position where the food is closest to the grill heater 51, as shown in FIG. 10. Then, the control circuit 30 can display on the display unit 60 a message indicating that the installation position of the stove 80 is instructed in this manner.

  The embodiments disclosed this time are to be considered in all respects as illustrative and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

It is a perspective view of the microwave oven which is one embodiment of the present invention. It is a front view of the operation panel of FIG. FIG. 2 is a front view of the microwave oven of FIG. 1 in a state where a door is opened. FIG. 2 is a perspective view of a microwave oven plate installed in the heating chamber of the microwave oven of FIG. 1. FIG. 5 is a rear view of the stove of FIG. 4. FIG. 5 is a front view of the range grilling dish of FIG. 4. FIG. 7 is a sectional view taken along the line VII-VII in FIG. 5. FIG. 8 is a sectional view taken along the line VIII-VIII in FIG. 1. FIG. 2 is a diagram schematically illustrating an electric configuration of the microwave oven in FIG. 1. FIG. 3 is a diagram illustrating a first modification of the heating chamber of the microwave oven in FIG. 1. FIG. 4 is a view showing a second modification of the heating chamber of the microwave oven in FIG. 1. FIG. 12 is a diagram schematically illustrating a cross section of the main body of the microwave oven in FIG. 11 at a height at which a protrusion exists. FIG. 12 is a diagram schematically illustrating a cross section of the main body of the microwave oven in FIG. 11 at a height at which a protrusion exists. FIG. 7 is a view showing a third modification of the heating chamber of the microwave oven in FIG. 1. FIG. 15 is a diagram schematically illustrating a cross section of the main body portion of the microwave oven in FIG. 14 at a height where a convex portion exists. FIG. 15 is a diagram schematically illustrating a cross section of the main body portion of the microwave oven in FIG. 14 at a height where a convex portion exists. FIG. 9 is a diagram for explaining a fourth modification of the microwave oven in FIG. 1. FIG. 18 is a diagram for explaining an effect of another modification of FIG. 17. FIG. 18 is a sectional view taken along the line FF in FIG. 17. It is a perspective view of the reflection plate of FIG. It is a figure which shows the further modification of FIG. It is a figure which shows the further modification of FIG. It is a figure which shows the further modification of FIG. It is a figure which shows the further modification of FIG. It is a figure which shows the 5th modification of the microwave oven of FIG. FIG. 26 is a diagram showing a temperature distribution on a microwave oven pan stored in the upper stage in the microwave oven of FIG. 25. FIG. 26 is a diagram showing a temperature distribution on a microwave oven pan stored in the lower stage in the microwave oven of FIG. 25. FIG. 26 is a plan view of the rotating antenna of the microwave oven of FIG. 25. FIG. 26 is a diagram illustrating an example of a stopping direction of a rotating antenna in the microwave oven of FIG. 25. FIG. 26 is a diagram illustrating an example of a stopping direction of a rotating antenna in the microwave oven of FIG. 25. It is a rear view of the microwave oven plate of the sixth modification of the microwave oven of FIG. It is a rear view of the microwave oven plate of the sixth modification of the microwave oven of FIG. FIG. 17 is a rear view of a microwave oven dish according to a seventh modification of the microwave oven in FIG. 1. FIG. 34 is a sectional view taken along line EE in FIG. 33. FIG. 35 is a diagram showing a state in which the front and back of the range grilling dish of FIG. 34 are turned upside down. FIG. 4 is a diagram showing a relationship between the resistivity of the high-frequency heating element and the electric field strength reflected and transmitted by the microwave oven when microwaves are supplied to the heating chamber in the present embodiment. It is a flowchart of the heating cooking process in the microwave oven of this Embodiment. It is a flowchart of the heating cooking process in the microwave oven of this Embodiment. It is a flowchart of the subroutine of the pre-heat processing of FIG. It is a flowchart of the subroutine of the output setting A process of FIG. It is a flowchart of the subroutine of the dish temperature detection process of FIG. It is a figure for explaining the temperature detection range of each element of the infrared sensor of this embodiment. It is a flowchart of the subroutine of the preheating control A processing of FIG. FIG. 44 is a flowchart of a subroutine of an output confirmation process in FIG. 43. FIG. 44 is a flowchart of a subroutine of an error detection process in FIG. 43. It is a figure for explaining change of the area included in the visual field range of the infrared detection element on the range grill according to the stowed height of the range grill. FIG. 4 is a diagram showing a time change of Tcave in a microwave oven 1 from the start of a preheat treatment. It is a flowchart of the subroutine of the preheating control B process of FIG. FIG. 49 is a flowchart of a subroutine of output setting B processing in FIG. 48. It is a flowchart of the subroutine of the preheating control C process of FIG. It is a flowchart of the subroutine of the preheating control D process of FIG. It is a flowchart of the subroutine of the range grill cooking process of FIG. FIG. 39 is a flowchart of a subroutine of a double-sided baking cooking process of FIG. 38.

Explanation of reference numerals

  1 microwave oven, 5 body frame, 6 operation panel, 7 infrared sensor, 9 bottom plate, 10 heating chamber, 12 magnetron, 19 waveguide, 40 detection path member, 59 oven thermistor, 80 range baking dish, 81 high frequency heating element, 101, 102 recess, 103, 104, 106, 107, 111-118 rail.

Claims (1)

A heating chamber for storing the object to be heated;
A magnetron that heats the object to be heated by supplying high frequency to the heating chamber,
A heater for heating an object to be heated in the heating chamber;
An input unit that receives an input of a total time of the heating time by the heater and the heating time by the magnetron,
A heating time determining unit that determines a heating time by the magnetron and a heating time by the heater based on a total time input to the input unit;
A high-frequency heating device including: a control unit that causes the magnetron and the heater to perform a heating operation for the heating time determined by the heating time determination unit.

Images