JP2004194046A - Crystal resonator and crystal oscillator using it - Google Patents

Crystal resonator and crystal oscillator using it Download PDF

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Publication number
JP2004194046A
JP2004194046A JP2002360561A JP2002360561A JP2004194046A JP 2004194046 A JP2004194046 A JP 2004194046A JP 2002360561 A JP2002360561 A JP 2002360561A JP 2002360561 A JP2002360561 A JP 2002360561A JP 2004194046 A JP2004194046 A JP 2004194046A
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Japan
Prior art keywords
crystal
electrode
groove
semiconductor element
cover
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Pending
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JP2002360561A
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Japanese (ja)
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JP2004194046A5 (en
Inventor
Makoto Watanabe
渡辺  誠
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Nihon Dempa Kogyo Co Ltd
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Nihon Dempa Kogyo Co Ltd
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Priority to JP2002360561A priority Critical patent/JP2004194046A/en
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Publication of JP2004194046A5 publication Critical patent/JP2004194046A5/ja
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a crystal resonator for which vibration characteristics are excellent and a crystal oscillator accelerating miniaturization. <P>SOLUTION: In the crystal resonator composed of a crystal piece provided with a stress relaxation groove on the outer peripheral part of a vibration area, the groove is turned to first and second double grooves provided on the inner and outer sides and the vibration area is surrounded by the double grooves. Also, the crystal piece where an extraction electrode is extended on mutually opposing surfaces by an electrode through-hole provided on the outer periphery of the double groove from the excitation electrode of the vibration area, a semiconductor element having a crystal terminal connected to the extraction electrode on one main surface and an external terminal on the other main surface, for which an oscillation circuit is integrated, and a cover are provided. The crystal piece, the semiconductor element and the cover are provided with a gap and the outer periphery is sealed with a sealing member. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は水晶振動子及びこれを用いた水晶発振器を産業上の技術分野とし、特に小型化を促進する水晶発振器に関する。
【0002】
【従来の技術】
(発明の背景)水晶発振器は周波数や時間の基準源として電子機器に広く用いられている。近年では、さらなる小型化が求められ対応が模索されている。
【0003】
(従来技術の一例)第3図は一従来例を説明する図で、同図(a)は水晶発振器の断面図、同図(b)は水晶片の図である。
水晶発振器は凹状とした実装基板1に半導体素子(ICチップ)3と水晶片2を収容し、カバー4を被せて密閉封入してなる。実装基板1は表面実装用の外部端子5を有する。半導体素子3は発振回路を集積化し、実装基板1の凹部底面にバンプ6を用いた超音波熱圧着によって固着される。水晶片2は両主面に励振電極7を有し、一端部両側に一対の引出電極8を延出する。各引出電極8は互いに反対面に折り返して形成される。そして、一端部両側を凹部の段部に導電性接着剤9によって固着してなる。
【0004】
【発明が解決しようとする課題】
(従来技術の問題点)しかしながら、上記構成の水晶発振器では半導体素子3と水晶片2とが実装基板1内に別個に固着されるため、構造上、小型化が困難となる。また、水晶片2も小さくなるので振動特性を確保することが困難な問題があった。
【0005】
(発明の目的)本発明は振動特性を良好とした水晶振動子及び小型化を促進する水晶発振器を提供することを目的とする。
【0006】
【特許文献1】特開2001-28516号公報
【0007】
【課題を解決するための手段】
本発明の請求項1では、振動領域の外周部に設けた応力緩和の溝は内外に設けた第1と第2の二重溝とし、前記振動領域を前記二重溝によって包囲する。したがって、例えば全周を固着(保持)したとしても、全周に溝が設けられているので振動領域に発生する応力が軽減され、振動特性を維持する。
【0008】
本発明の請求項2では、前記振動領域の励振電極から前記二重溝の外周に設けた電極貫通孔によって互いに反対面に引出電極を延出した水晶片と、前記引出電極と接続する水晶端子を一主面に有して外部端子を他主面に有するとともに発振回路を集積化した半導体素子と、カバーとを備える。そして、前記水晶片と前記半導体素子及び前記カバーとに間隙を設けて外周をシーリング部材によって封止する。
【0009】
この構成であれば、水晶片に電極貫通孔を設けて引出電極を両主面に設けるので、外周を封止できる。そして、水晶片の両主面に電気的に接続した半導体素子とカバーを接合するので、水晶発振器の高さ寸法を小さくできる。以下、本発明の一実施例を説明する。
【0010】
【実施例】
第1図は本発明の一実施例を説明する図で、同図(a)は水晶発振器の分解図、同図(b)は同正面図である。
水晶発振器は水晶片2と半導体素子3とカバー4とからなる。水晶片2は略正方形状とし、中央部を振動領域として両主面に励振電極7を有する。振動領域の外周には、内外に設けた第1と第2の溝10(ab)の二重溝10を有する。第1溝10aは励振電極7の4角部に鉤状に、第2溝10bは4辺に平行に形成される。要するに、二重溝10は振動領域(励振電極7)を包囲して形成される。
【0011】
励振電極7からは二重溝10の間を経て一端部両側に引出電極8が延出し、さらに電極貫通孔11によって互いに反対面に延出する。また、両主面の外周には接合用の環状電極12が形成され、他端部両側に電極貫通孔11を有するアース電極14が形成される。
【0012】
半導体素子3は発振回路を集積化し、一主面側を基準電位面ここではアース電位面とする。そして、特許文献1で示されるように一主面の一端部両側に水晶端子13を他端部両側にアース電極14を、他主面に図示しない電源、出力及びアース端子等の外部端子を有する。
【0013】
なお、一主面のアース電位面はアース端子に電気的に接続する。アース端子はそして、各外部端子には実装端子5としての例えば半田ボールが接続する。また、一主面の外周には接合用の環状電極12が形成される。カバー4は金属又は導電性を有する材料からなる。
【0014】
このようなものでは、引出電極8の延出した水晶片2の一端部両側と半導体素子3の水晶端子13とを、両者のアース電極14とを、また外周に設けた両者の環状電極12とを、及び水晶片2とカバー4とを位置決めして積層する。但し、水晶片2、半導体素子3及びカバー4との当接面間には水晶の転移点温度573℃以下の接合金属15例えばAuSnからなる共晶合金を介在させる。そして、共晶合金を溶融して接合し、封止する。
【0015】
このような構成であれば、水晶片2の一端部両側に電極貫通孔11を設けて同一主面に引出電極8を延出し、外周に環状電極12を形成する。そして、半導体素子3を実装基板1として兼用し、水晶片2とカバー4を積層して封止するので、基本的に高さ寸法を小さくできる。なお、接合金属15の厚みによって振動領域との間にギャップが形成され、振動が維持される。
【0016】
また、水晶片2は二重溝10によって振動領域が包囲されるので、全方向からの応力を緩和する。したがって、水晶片2の全周が半導体素子3及びカバー4に固着しても、振動領域に与える影響を小さくして振動特性を良好にする。そして、この実施例ではカバー4を金属として半導体素子3のアース電位面(一主面側)に電気的に接続するので、カバー4を接地できてシールド効果を奏する。
【0017】
【他の事項】
上記実施例では水晶片2と半導体素子3及びカバー4とは環状電極12に共晶合金を設けて接合したが、環状電極は除去して低融点ガラスや樹脂によって封止してもよい。この場合、カバー4はセラミック等の絶縁材としてもよい。要するに、水晶片2、半導体素子3及びカバー4との外周をシーリング部材によって封止すればよい。
【0018】
また、引出電極8を水晶片2の一辺側に延出したが、一組の対角部に延出してもよい。この場合、他組の対角部にアース電極14を形成する。そして、これに応答して半導体素子3の一主面に水晶端子13及びアース電極を形成する。
【0019】
また、水晶発振器として説明したが、水晶片2は任意な保持手段によって水晶振動子としても利用できる。例えば凹状とした実装基板の底面に水晶片2の外周を固着して封止して水晶振動子とすることもできる。また、振動領域は矩形状としたが、円形状としてもよく任意に形成できる。
【0020】
【発明の効果】
本発明は、振動領域の外周部に設けた応力緩和の溝は内外に設けた第1と第2の二重溝とし、前記振動領域を前記二重溝によって包囲するので、振動特性を良好とした水晶振動子を提供できる。そして、前記振動領域の励振電極から前記二重溝の外周に設けた電極貫通孔によって互いに反対面に引出電極を延出した水晶片と、前記引出電極と接続する水晶端子を一主面に有して外部端子を他主面に有するとともに発振回路を集積化した半導体素子と、カバーとを備え、前記水晶片と前記半導体素子及び前記カバーとに間隙を設けて外周をシーリング部材によって封止するので、振動特性を維持して小型化を促進する水晶発振器を提供できる。
【図面の簡単な説明】
【図1】本発明の一実施例を説明する図で、同図(a)は水晶発振器の分解図、同図(b)は同正面図である。
【図2】本発明の一実施例を説明する水晶振動子の平面図である。
【図3】従来例を説明する図で、同図(a)は水晶振動子の断面図、同図(b)は水晶片の平面図である。
【符号の説明】
1 実装基板、2 水晶片、3 半導体素子、4 カバー、5 実装端子、6バンプ、7 励振電極、8 引出電極、9 導電性接着剤、10 二重溝、11 貫通孔、12 環状電極、13 水晶端子、14 アース電極、15 接合金属.
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a crystal oscillator and a crystal oscillator using the same in an industrial technical field, and particularly relates to a crystal oscillator that promotes miniaturization.
[0002]
[Prior art]
BACKGROUND OF THE INVENTION Crystal oscillators are widely used in electronic equipment as frequency and time reference sources. In recent years, further miniaturization has been demanded and a response has been sought.
[0003]
(Example of Prior Art) FIGS. 3 (a) and 3 (b) are views for explaining a conventional example, wherein FIG. 3 (a) is a sectional view of a crystal oscillator and FIG. 3 (b) is a view of a crystal blank.
The crystal oscillator has a semiconductor substrate (IC chip) 3 and a crystal blank 2 housed in a mounting board 1 having a concave shape, covered with a cover 4 and hermetically sealed. The mounting board 1 has external terminals 5 for surface mounting. The semiconductor element 3 integrates an oscillation circuit, and is fixed to the bottom surface of the concave portion of the mounting substrate 1 by ultrasonic thermocompression using a bump 6. The crystal blank 2 has excitation electrodes 7 on both main surfaces, and a pair of extraction electrodes 8 extends on both sides of one end. Each extraction electrode 8 is formed by folding back on the opposite surface. Then, both ends of the one end are fixed to the step of the concave portion by the conductive adhesive 9.
[0004]
[Problems to be solved by the invention]
(Problems of the prior art) However, in the crystal oscillator having the above configuration, since the semiconductor element 3 and the crystal blank 2 are separately fixed in the mounting substrate 1, it is difficult to reduce the size in terms of structure. In addition, there is a problem that it is difficult to secure vibration characteristics because the crystal blank 2 is also small.
[0005]
(Object of the Invention) It is an object of the present invention to provide a crystal resonator having improved vibration characteristics and a crystal oscillator which promotes miniaturization.
[0006]
[Patent Document 1] Japanese Patent Application Laid-Open No. 2001-28516
[Means for Solving the Problems]
According to the first aspect of the present invention, the stress relaxation grooves provided on the outer peripheral portion of the vibration region are first and second double grooves provided inside and outside, and the vibration region is surrounded by the double groove. Therefore, for example, even if the entire circumference is fixed (held), the stress generated in the vibration area is reduced because the groove is provided on the entire circumference, and the vibration characteristics are maintained.
[0008]
According to a second aspect of the present invention, a crystal piece in which extraction electrodes are extended from the excitation electrode in the vibration region to surfaces opposite to each other by electrode through holes provided in the outer periphery of the double groove, and a crystal terminal connected to the extraction electrode And a cover having an external circuit on one main surface, external terminals on the other main surface, and an integrated oscillation circuit. Then, a gap is provided between the crystal blank, the semiconductor element, and the cover, and the outer periphery is sealed with a sealing member.
[0009]
With this configuration, the outer periphery can be sealed because the electrode through-holes are provided in the crystal blank and the extraction electrodes are provided on both main surfaces. Since the cover and the semiconductor element electrically connected to both main surfaces of the crystal blank are joined, the height of the crystal oscillator can be reduced. Hereinafter, an embodiment of the present invention will be described.
[0010]
【Example】
FIG. 1 is a view for explaining an embodiment of the present invention. FIG. 1 (a) is an exploded view of a crystal oscillator, and FIG. 1 (b) is a front view thereof.
The crystal oscillator includes a crystal blank 2, a semiconductor element 3, and a cover 4. The crystal blank 2 has a substantially square shape, and has excitation electrodes 7 on both main surfaces with a central portion as a vibration region. The outer periphery of the vibration region has a double groove 10 of first and second grooves 10 (ab) provided inside and outside. The first groove 10a is formed in a hook shape at the four corners of the excitation electrode 7, and the second groove 10b is formed parallel to the four sides. In short, the double groove 10 is formed so as to surround the vibration region (the excitation electrode 7).
[0011]
From the excitation electrode 7, the extraction electrodes 8 extend to both sides of one end portion through the double groove 10, and further extend to opposite surfaces by electrode through holes 11. An annular electrode 12 for bonding is formed on the outer periphery of both main surfaces, and a ground electrode 14 having electrode through holes 11 on both sides of the other end.
[0012]
The semiconductor element 3 integrates an oscillation circuit, and one main surface side is used as a reference potential surface, here, a ground potential surface. As shown in Patent Document 1, a crystal terminal 13 is provided on one side of one main surface, a ground electrode 14 is provided on both sides of the other end, and external terminals such as a power supply, an output and a ground terminal (not shown) are provided on the other main surface. .
[0013]
The one main surface of the earth potential surface is electrically connected to the earth terminal. The ground terminal is connected to each external terminal, for example, a solder ball as the mounting terminal 5. An annular electrode 12 for bonding is formed on the outer periphery of one main surface. The cover 4 is made of a metal or a material having conductivity.
[0014]
In such a device, both sides of one end of the crystal piece 2 extending from the extraction electrode 8 and the crystal terminal 13 of the semiconductor element 3, the ground electrodes 14 of the two, and the two annular electrodes 12 provided on the outer periphery are used. And the crystal blank 2 and the cover 4 are positioned and laminated. However, a bonding metal 15 having a transition point temperature of 573 ° C. or lower, for example, a eutectic alloy made of AuSn is interposed between the contact surfaces of the crystal blank 2, the semiconductor element 3, and the cover 4. Then, the eutectic alloy is melted, joined, and sealed.
[0015]
With such a configuration, the electrode through-holes 11 are provided on both sides of one end of the crystal blank 2, the extraction electrode 8 extends on the same main surface, and the annular electrode 12 is formed on the outer periphery. Since the semiconductor element 3 is also used as the mounting substrate 1 and the crystal blank 2 and the cover 4 are laminated and sealed, the height dimension can be basically reduced. Note that a gap is formed between the joining metal 15 and the vibrating region by the thickness of the joining metal 15, and the vibration is maintained.
[0016]
Further, since the vibrating region of the crystal blank 2 is surrounded by the double groove 10, the stress from all directions is reduced. Therefore, even if the entire circumference of the crystal blank 2 is fixed to the semiconductor element 3 and the cover 4, the influence on the vibration region is reduced, and the vibration characteristics are improved. In this embodiment, since the cover 4 is made of metal and is electrically connected to the ground potential surface (one main surface side) of the semiconductor element 3, the cover 4 can be grounded, and a shielding effect can be obtained.
[0017]
[Other matters]
In the above embodiment, the crystal blank 2 and the semiconductor element 3 and the cover 4 are joined by providing the ring electrode 12 with a eutectic alloy, but the ring electrode may be removed and sealed with low melting point glass or resin. In this case, the cover 4 may be made of an insulating material such as ceramic. In short, the outer peripheries of the crystal blank 2, the semiconductor element 3, and the cover 4 may be sealed with a sealing member.
[0018]
Further, although the extraction electrode 8 extends to one side of the crystal blank 2, it may extend to a pair of diagonal portions. In this case, the ground electrode 14 is formed at another diagonal part. Then, in response to this, a crystal terminal 13 and a ground electrode are formed on one main surface of the semiconductor element 3.
[0019]
Further, although the crystal oscillator has been described as a crystal oscillator, the crystal blank 2 can also be used as a crystal oscillator by any holding means. For example, the outer periphery of the crystal blank 2 may be fixed to the bottom surface of the concave mounting board and sealed to form a crystal resonator. Further, although the vibration area is rectangular, it may be circular and may be formed arbitrarily.
[0020]
【The invention's effect】
According to the present invention, the grooves for stress relaxation provided on the outer peripheral portion of the vibration region are first and second double grooves provided on the inside and outside, and the vibration region is surrounded by the double groove. Can provide a crystal resonator that has been manufactured. A crystal piece having extraction electrodes extending from the excitation electrode in the vibration region to surfaces opposite to each other by electrode through holes provided on the outer periphery of the double groove, and a crystal terminal connected to the extraction electrode are provided on one main surface. A semiconductor element having an external terminal on the other main surface and an integrated oscillation circuit, and a cover, wherein a gap is provided between the crystal blank, the semiconductor element, and the cover, and the outer periphery is sealed with a sealing member. Therefore, it is possible to provide a crystal oscillator that maintains vibration characteristics and promotes miniaturization.
[Brief description of the drawings]
FIGS. 1A and 1B are diagrams illustrating an embodiment of the present invention. FIG. 1A is an exploded view of a crystal oscillator, and FIG. 1B is a front view thereof.
FIG. 2 is a plan view of a crystal unit explaining one embodiment of the present invention.
3A and 3B are diagrams illustrating a conventional example, wherein FIG. 3A is a cross-sectional view of a crystal resonator, and FIG. 3B is a plan view of a crystal blank.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 mounting board, 2 crystal pieces, 3 semiconductor elements, 4 covers, 5 mounting terminals, 6 bumps, 7 excitation electrodes, 8 extraction electrodes, 9 conductive adhesive, 10 double grooves, 11 through holes, 12 annular electrodes, 13 Crystal terminal, 14 ground electrode, 15 bonding metal.

Claims (2)

振動領域の外周部に応力緩和の溝を設けた水晶片からなる水晶振動子において、前記溝は内外に設けた第1と第2の二重溝とし、前記振動領域を前記二重溝によって包囲したことを特徴とする水晶振動子。In a crystal resonator made of a crystal piece having a groove for stress relaxation provided on an outer peripheral portion of a vibration region, the groove is first and second double grooves provided inside and outside, and the vibration region is surrounded by the double groove. A crystal unit characterized by the following. 前記振動領域の励振電極から前記二重溝の外周に設けた電極貫通孔によって互いに反対面に引出電極を延出した水晶片と、前記引出電極と接続する水晶端子を一主面に有して外部端子を他主面に有するとともに発振回路を集積化した半導体素子と、カバーとを備え、前記水晶片と前記半導体素子及び前記カバーとに間隙を設けて外周をシーリング部材によって封止したことを特徴とする水晶発振器。A crystal piece having an extraction electrode extending from the excitation electrode in the vibration region to the opposite surface by an electrode through hole provided on the outer periphery of the double groove, and a crystal terminal connected to the extraction electrode on one main surface. A semiconductor element having an external terminal on the other main surface and an integrated oscillation circuit, and a cover, wherein a gap is provided between the crystal blank and the semiconductor element and the cover, and the outer periphery is sealed with a sealing member. Characterized crystal oscillator.
JP2002360561A 2002-12-12 2002-12-12 Crystal resonator and crystal oscillator using it Pending JP2004194046A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038359B2 (en) * 2002-07-22 2006-05-02 Toyo Communication Equipment Co., Ltd. Piezoelectric resonator and the method for making the same
JP2007013570A (en) * 2005-06-30 2007-01-18 Kyocera Kinseki Corp Piezoelectric oscillator
JP2007324933A (en) * 2006-05-31 2007-12-13 Kyocera Kinseki Corp Piezoelectric oscillator and its manufacturing method
JP2008060957A (en) * 2006-08-31 2008-03-13 Kyocera Kinseki Corp Piezoelectric oscillator

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7038359B2 (en) * 2002-07-22 2006-05-02 Toyo Communication Equipment Co., Ltd. Piezoelectric resonator and the method for making the same
JP2007013570A (en) * 2005-06-30 2007-01-18 Kyocera Kinseki Corp Piezoelectric oscillator
JP4541983B2 (en) * 2005-06-30 2010-09-08 京セラキンセキ株式会社 Piezoelectric vibrator
JP2007324933A (en) * 2006-05-31 2007-12-13 Kyocera Kinseki Corp Piezoelectric oscillator and its manufacturing method
JP2008060957A (en) * 2006-08-31 2008-03-13 Kyocera Kinseki Corp Piezoelectric oscillator

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