JP2004193482A - Ozone treatment system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an ozone treatment system in which treatment gas containing ozone is supplied uniformly to the surface of a substrate and the substrate can be treated uniformly and efficiently. <P>SOLUTION: The ozone treatment system 1 comprises a conveyor 10 for conveying a substrate K while supporting in the direction along the surface of the substrate K, a heater 20 for heating the substrate K, a treatment gas supply head 30 disposed above the substrate K oppositely thereto and ejecting treatment gas toward the substrate K, and a unit 53 for supplying treatment gas to the treatment gas supply head 30. The treatment gas supply head 30 is constituted of a housing-like member 37 provided with a gas retention chamber 45 having a specified inner volume and opening to the opposite lower surface of the substrate K. The opening is closed by a planar ventilating member 40 provided, over the entire region thereof, with a large number of ventilation channels extending between the surface and the rear surface. Treatment gas supplied from the gas supply unit 53 fills the gas retention chamber 45 before being discharged through each ventilation channel of the ventilating member 37. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention sprays a processing gas containing at least ozone on a substrate surface such as a semiconductor substrate or a liquid crystal substrate to form an oxide film on the substrate surface or to modify an oxide film formed on the substrate surface. Further, the present invention relates to an ozone treatment apparatus for removing a resist film formed on a substrate surface.
[0002]
[Prior art]
Conventionally, as the above-mentioned ozone treatment apparatus, one having a structure as shown in FIG. 10 is known. As shown in FIG. 10, the ozone treatment apparatus 100 includes a mounting table 101 on which a substrate K is mounted, an elevating means 102 for supporting the bottom surface of the mounting table 101 and elevating the same, and a mounting table 101. And a processing gas supply head 103 and the like, which are disposed above the processing gas supply head 103.
[0003]
The mounting table 101 and the processing gas supply head 103 are provided in a processing chamber (not shown) having a closed space, and the gas in the processing chamber (not shown) is (Not shown) is discharged to the outside from a discharge port (not shown) appropriately formed.
[0004]
The mounting table 101 has a built-in heater (not shown), and the substrate K mounted thereon is heated by the heater (not shown). The processing gas supply head 103 includes a block-shaped head main body 104 and a plurality of nozzle bodies 108 fixed to the lower surface of the head main body 104 so as to hang down therefrom.
[0005]
An ozone gas flow path 105 and a cooling liquid flow path 107 are formed in the head main body 104. An ozone gas generation device 111 is connected to the ozone gas flow path 105, and a cooling liquid circulation Device 112 is connected. The head main body 104 is formed with a plurality of communication holes 106 that communicate with the ozone gas flow path 105 and open on the lower surface of the head main body 104.
[0006]
Each of the nozzle bodies 108 is formed of a tubular member, and upper openings 109 are respectively connected to the respective communication holes 106, while lower openings 110 are respectively opposed to the surface of the substrate K.
[0007]
According to the ozone treatment apparatus 100 configured as described above, when the substrate K is appropriately mounted on the mounting table 101, the substrate K is heated to a predetermined temperature by a heater (not shown), and the substrate K is The mounting table 101 is raised by the elevating means 102 such that the opening 110 of the nozzle body 108 is spaced from the opening 110 by a predetermined distance.
[0008]
The coolant is supplied and circulated from the coolant circulation device 112 to the coolant passage 107, and the head body 104 is cooled by the coolant.
[0009]
Then, the ozone gas (processing gas) of a predetermined concentration generated by the ozone gas generation device 111 is supplied to each nozzle body 108 through the ozone gas flow path 105 and each communication hole 106, and the substrate K is opened through the lower opening 110. Each is discharged toward the surface.
[0010]
The discharged ozone gas collides with the substrate K and forms an ozone gas layer flowing along the substrate K. In this flow, the ozone (O ₃ ) is heated by the substrate K, and thus the ozone (O ₃ ) is heated by the substrate K. It is decomposed into oxygen (O ₂ ) and active oxygen (O ^* ) by contact with K or resist. The active oxygen (O ^* ) forms an oxide film on the surface of the substrate K, modifies the oxide film on the surface of the substrate K, and further activates the resist film formed on the surface of the substrate K. It is removed by a thermochemical reaction with oxygen (O ^* ).
[0011]
The ambient temperature inside the processing chamber (not shown) is heated by a heater (not shown) to a high temperature. Therefore, the head main body 104 is heated by this high temperature atmosphere. Is cooled by a coolant flowing through the coolant channel 107. Therefore, the ozone gas flowing in the ozone gas flow path 105 is cooled by the coolant, and the temperature is maintained within a certain range. Thereby, the thermal decomposition of ozone due to the temperature rise is prevented, and the ozone concentration in the ozone gas is prevented from lowering.
[0012]
[Problems to be solved by the invention]
However, in the above-mentioned conventional ozone treatment apparatus 100, the ozone gas discharged from each nozzle body 108 flows along the surface of the substrate K so as to spread around the area immediately below the opening 110 of each nozzle body 108 as a center. At the same time, in the flow, the ozone concentration gradually decreases due to thermal decomposition, so that the substrate K is treated with a low-concentration ozone gas as the distance from the vicinity immediately below the opening 110 increases, and the uniformity is achieved over the entire processing region. There is a problem in that it is not possible to perform any kind of processing.
[0013]
In addition, on the surface of the substrate K directly below the opening 110, the flow rate of the ozone gas is higher than the surrounding area, and the flow rate of the ozone gas tends to be lower than the surrounding area due to the cooling by the ozone gas flow. Decomposition was insufficient, the effect of ozone treatment was reduced, and the region to be uniformly ozone-treated tended to have a donut shape (annular shape).
[0014]
As a means of solving such inconvenience, it is conceivable to increase the flow rate of the ozone gas discharged from each nozzle body 108, but if the discharge flow rate of the ozone gas is increased, the ozone exhausted without reacting increases, This is not preferable because efficient substrate processing cannot be performed.
[0015]
The present invention has been made in view of the above circumstances, and provides an ozone treatment apparatus capable of uniformly supplying a processing gas containing ozone to a substrate surface and uniformly and efficiently treating the substrate. Aim.
[0016]
Means for Solving the Problems and Their Effects
To achieve the above object, the present invention provides a transporting unit that supports a substrate and transports the substrate in a direction along the substrate surface, a heating unit that heats the substrate transported by the transporting unit, A processing gas supply head that is disposed to face a transfer surface and discharges a processing gas containing ozone toward a substrate transferred by the transfer means; and supplies the processing gas to the processing gas supply head. An ozone treatment device comprising a gas supply means,
The processing gas supply head is formed of a housing-shaped member having a gas storage chamber having a predetermined internal volume opened on a surface opposite to the transfer surface of the transfer means, and the opening is provided with a ventilation hole penetrating from front to back. It is closed by a plate-shaped breathable member having a large number of roads over the entire area,
The processing gas supplied from the gas supply unit is filled in the gas retention chamber, discharged through each ventilation path of the permeable member, and sprayed on the substrate surface transported by the transportation unit. The present invention relates to an ozone treatment apparatus which is provided.
[0017]
According to this invention, the substrate is supported by the transfer means, is transferred at a predetermined speed in a direction along the surface thereof, and is heated by the heating means during the transfer. Further, the processing gas containing ozone is supplied from the gas supply means to the gas storage chamber of the processing gas supply head.
[0018]
The processing gas supplied to the gas storage chamber is discharged toward the substrate surface through the ventilation path of the gas permeable member provided at the opening of the gas storage chamber, but the internal pressure in the gas storage chamber increases, When the pressure in the retaining chamber becomes substantially equilibrium, the processing gas is discharged from the entire area of the permeable member at a substantially uniform speed. That is, the processing gas supplied to the gas retaining chamber is discharged toward the surface of the substrate conveyed by the conveying means while being diffused at a substantially uniform speed by the gas permeable member.
[0019]
Then, the processing gas discharged from the entire area of the permeable member at a substantially uniform speed reaches the substrate surface immediately below each ventilation path, and the ozone (O ₃ ) in the processing gas becomes oxygen (O ₂ ). It is decomposed into active oxygen (O ^* ), and the active oxygen (O ^* ) forms an oxide film on the substrate surface, or modifies the oxide film on the substrate surface, and further forms on the substrate surface. The resist film thus removed is removed by a thermochemical reaction with active oxygen (O ^* ), and the processed gas after the reaction flows along the substrate surface and then flows out from between the gas permeable member and the substrate as appropriate.
[0020]
In this way, the substrate surface transferred by the transfer means is sequentially processed by the processing gas discharged from the processing gas supply head.
[0021]
As described above, according to this ozone treatment apparatus, after the processing gas is supplied to and filled in the gas storage chamber, the processing gas is discharged from the ventilation path formed over the entire area of the permeable member. The speed of the processing gas to be performed can be made substantially uniform over the entire area of the gas permeable member, and the entire area of the substrate facing the gas permeable member can be processed almost uniformly.
[0022]
That is, if the speed of the processing gas discharged from the air permeable member is uniform, the supply amount of the processing gas supplied to the processing region of the substrate per hour becomes uniform in the processing region, and thus the generation amount by the decomposition of ozone is generated. The amount of active oxygen to be performed is uniform over the entire processing region of the substrate, and as a result, the substrate can be uniformly processed.
[0023]
Further, the substrate is cooled by contacting the processing gas at a predetermined flow rate, but if the velocity of the processing gas to be discharged is uniform, the temperature drop in the entire processing region of the substrate in contact with the substrate becomes uniform, and the surface of the substrate is cooled The temperature becomes uniform. For this reason, the active oxygen generation efficiency becomes uniform over the entire processing region of the substrate, and in this sense, the substrate can be uniformly processed as described above.
[0024]
The processing gas supply head may be used alone, or a plurality of processing gas supply heads may be arranged on the same plane so that a gap is formed between adjacent processing gas supply heads.
[0025]
As described above, the processing gas discharged from the gas permeable member and supplied to the substrate surface flows along the substrate surface and flows out between the gas permeable member and the substrate. The processing gas discharged from the vicinity of the center of the processing gas supply head is easily replaced by the sequentially supplied unreacted processing gas, and the substrate surface corresponding to the vicinity of the center is processed by the processing gas having a stable ozone concentration. However, in the peripheral part from the center, the processed gas after the reaction is hard to be replaced by the newly supplied unreacted processing gas, and these are mixed to reduce the ozone concentration, which is lower than that near the center. I hate to reduce processing efficiency.
[0026]
Therefore, when the processing gas supply head is a single unit, if the processing area of the substrate is relatively small and the processing gas after the reaction can be easily replaced with the unreacted processing gas, the processing area is uniform. However, when the processing area of the substrate is large, it is difficult for the processing gas after the reaction to be replaced with the unreacted processing gas in the peripheral portion, and the required processing area is uniformly processed. It is possible that things cannot be done.
[0027]
Therefore, when increasing the processing area of the substrate, a plurality of processing gas supply heads having a size capable of performing uniform processing are prepared, and a gap is formed between adjacent processing gas supply heads. It is good to adopt the above-mentioned configuration arranged in the same plane. With this configuration, since the processing gas after the reaction is exhausted from the gap, the size of each processing gas supply head is set to a size such that the processing gas after the reaction can be favorably replaced with the unreacted processing gas. By doing so, it becomes possible to process the entire area of the substrate surface processed by each processing gas supply head more uniformly.
[0028]
Further, the processing gas supply heads are disposed on both sides of the transfer surface of the transfer means, respectively, and the processing gas discharged from the processing gas supply head is provided on both the front and back surfaces of the substrate to be transferred by the transfer means. You may comprise so that it may be sprayed. In this way, when a resist film is formed on the surface of the substrate, it is possible to effectively remove the resist that has partially adhered to the back surface (lower surface) of the substrate.
[0029]
And also in this case, similarly to the above, a plurality of processing gas supply heads are respectively disposed on both sides of the transfer surface of the transfer means, and the processing gas supply heads on each side are separated from each other by the adjacent processing gas supply heads. It is preferable that the processing gas supply heads are disposed on the same plane so that a gap is formed between the processing gas supply heads.
[0030]
Further, at the time of ozone treatment, it is preferable that the processing gas supply head is as close to the substrate as possible, and the interval between the permeable member and the substrate is preferably 0.2 mm or more and 1.4 mm or less. . If the distance exceeds 1.4 mm, the time required for the discharged processing gas to reach the substrate surface becomes long, during which the ozone concentration decreases due to thermal decomposition or the processing gas diffuses into the atmosphere. This is because uniform and efficient processing cannot be performed. On the other hand, if the distance is less than 0.2 mm, there arises a problem that it is difficult for the processing gas to be exhausted from between the gas permeable member and the substrate, and a problem in manufacturing the device.
[0031]
Further, in the processing gas supply head, a plurality of the gas retention chambers are formed therein, and the openings of the gas retention chambers are respectively closed by the gas-permeable members, and between the gas retention chambers. The processing gas supply head may be configured such that through holes are respectively formed in upper and lower surfaces thereof, and the gas supply unit may be configured to supply the processing gas to each of the gas retaining chambers. . Even in this case, since the processed gas after the reaction is exhausted from the through hole, the size of each gas retaining chamber is set to a size that allows the processed gas after the reaction to be replaced with the unreacted processing gas. By doing so, the processing area on the substrate surface can be processed almost uniformly over the entire area.
[0032]
Further, in the ozone treatment apparatus, a flow path through which a cooling fluid flows is formed above the gas retention chamber, and cooling fluid circulation means for supplying and circulating a cooling fluid in the flow path is provided, The processing gas in the gas storage chamber may be cooled by a cooling fluid flowing in the flow path.
[0033]
With this configuration, even if the processing gas supply head is heated by the atmosphere heated to a high temperature by the heating means, the processing gas in the gas retaining chamber is cooled by the cooling fluid flowing in the flow path. In addition, the temperature of the processing gas can be maintained within a certain range, and the ozone concentration in the processing gas can be prevented from lowering.
[0034]
Preferred examples of the air-permeable member include a sintered body of stainless steel, a sintered body of zirconia, a sintered body of titanium and a sintered body of ceramic, a porous film of polytetrafluoroethylene, a wire mesh, Punching metal, nonwoven fabric made of metal, and the like can be given, but not limited to these.
[0035]
Further, the heating temperature of the substrate is preferably in the range of 200 ° C to 500 ° C. Within this range, the impurities contained in the substrate can be evaporated at the same time as the above processing. The processing gas preferably contains ozone of 14% by weight or more, and may be a mixed gas of ozone and TEOS (Tetraethyl orthosilicate, tetraethyl silicate, Si (C ₂ H ₅ O) ₄ ). .
[0036]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings. FIG. 1 is a plan view showing a schematic configuration of an ozone treatment apparatus according to one embodiment of the present invention, and FIG. 2 is a side view in the direction of arrow A in FIG. FIG. 3 is a sectional view showing a schematic configuration of the processing gas supply head according to the present embodiment.
[0037]
As shown in FIGS. 1 and 2, the ozone treatment apparatus 1 of the present embodiment includes a processing chamber 5 having a predetermined internal volume, a processing chamber 5 disposed in the processing chamber 5, and supporting a substrate K in a predetermined direction ( A transport roller 10 that transports in the direction indicated by arrow C in FIG. 1 and a direction above the substrate K transported by the transport roller 10 that opposes the substrate K and that is orthogonal to the transport direction (see the arrow in FIG. D), two processing gas supply heads 30 arranged at predetermined intervals along the transport direction so as to cover the entire width of the substrate K, and the substrate K is disposed below the substrate K. It is configured to include a heater 20 for heating.
[0038]
The processing chamber 5 has a predetermined internal volume closed by a lid 6, and a carry-in port (not shown) for carrying in the substrate K and a carry-out port (not shown) for carrying out the substrate K are appropriately provided. The casing is formed so that gas inside the casing is exhausted to the outside by an exhaust device 55 through exhaust pipes 56 and 57 penetrating and fixed to the side wall of the processing chamber 5. The inside of the processing chamber 5 is adjusted to a pressure of 7 KPa or more (more preferably, 14 KPa or more) and a pressure of an ozone gas supply source or less by the exhaust device 55.
[0039]
A plurality of the transport rollers 10 are arranged at predetermined intervals along the transport direction, and both ends of the rotating shaft 11 are supported by respective supporting devices 13 appropriately fixed to the side walls of the processing chamber 5. Each is rotatably supported. Further, a flange 12a is formed on each of the rollers 12 located on both sides of the transport roller 10, and the movement of the substrate K in the direction indicated by the arrow D is regulated by the flange 12a.
[0040]
One end of the rotating shaft 11 is connected to a driving device (not shown), and the driving device (not shown) causes the rotating shaft 11 to rotate about its axis, thereby rotating the transport roller 10. Then, the substrate K is transported in the transport direction.
[0041]
As shown in FIGS. 1 to 3, each of the processing gas supply heads 30 has a block-like upper member 35 and a housing-like shape having an internal space fixed to the lower surface of the upper member 35 and opened vertically. And a permeable member 40 provided in an opening 38 on the lower surface (the surface facing the substrate K) of the lower member 37 so as to close the opening 38. The gap g between the lower surface of each of the air permeable members 40 and the surface of the substrate K is arranged at a predetermined interval.
[0042]
The processing gas supply heads 30 are supported by support members 31 fixed to the side walls of the processing chamber 5 as appropriate.
[0043]
Each of the air-permeable members 40 is a plate-shaped member having a large number of air passages penetrating vertically (front and back) over the entire area, and as described above, closes the lower opening 38 of the lower member 37 so as to close the lower opening 38. The lower surface thereof is fixed to the member 37 and faces the substrate K supported and transported by the transport roller 10 over the entire width in the direction of arrow D.
[0044]
The air-permeable member 40 includes a sintered body of stainless steel, a sintered body of zirconia, a sintered body of titanium and a sintered body of ceramic, a porous film of polytetrafluoroethylene, a wire mesh, a punched metal, For example, when the air-permeable member 40 is made of a sintered body, the voids (pores) formed between the particles correspond to the air passage.
[0045]
The internal space of the lower member 37 closed by the upper member 35 and the gas permeable member 40 functions as a gas retaining chamber 45, and each gas retaining chamber 45 has a predetermined space generated by the ozone gas generator 53. Concentrated ozone gas (processing gas) is supplied and filled from the ozone gas generator 53 via the ozone gas flow path 39 formed in the pipe 54 and each lower member 37.
[0046]
In this way, the ozone gas supplied from the ozone gas generator 53 to each gas storage chamber 45 via the pipe 54 and each ozone gas flow path 39 is supplied to the air permeability provided in the lower opening 38 of each gas storage chamber 45. The gas is discharged toward the surface of the substrate K through the ventilation path of the member 40. When the internal pressure in each gas retention chamber 45 increases and the pressures in the respective gas retention chambers 45 are substantially in an equilibrium state, the ozone gas is discharged through each ventilation port. The liquid is discharged from the entire area of the sexual member 40 at a substantially uniform speed. That is, the ozone gas supplied to each gas retaining chamber 45 is discharged toward the surface of the substrate K in a state where the ozone gas is diffused at a substantially uniform speed by each permeable member 40.
[0047]
In each of the upper members 35, a cooling liquid passage 36 penetrating from one side surface to the other side surface is formed, and a cooling liquid circulating device 50 is provided at both ends of each cooling liquid passage 36. Are connected to each other, and the coolant is supplied from the coolant circulating device 50 to each coolant channel 36 via the pipe 51. Then, the supplied coolant flows through each coolant channel 36 and is returned to the coolant circulation device 50 through the pipe 52. In this way, the cooling liquid is circulated between each processing gas supply head 30 and the cooling liquid circulating device 50, and each processing gas supply head 30 is cooled by the cooling liquid, and is supplied and filled into the gas retaining chamber 45. The ozone gas is cooled.
[0048]
According to the ozone processing apparatus 1 of the present example configured as described above, first, the substrate K is loaded into the processing chamber 5 from the loading port (not shown) of the processing chamber 5 by appropriate means. As described above, the pressure in the processing chamber 5 is adjusted by the exhaust device 55 to 7 KPa or more (more preferably, 14 KPa or more) and to the pressure of the ozone gas supply source or less.
[0049]
The loaded substrate K is supported and guided by the transport rollers 10 and transported in the direction of arrow C, and is heated to a predetermined temperature by the heater 20. Further, the coolant is supplied and circulated from the coolant circulation device 50 to each of the coolant channels 36, and the processing gas supply heads 30 are cooled by the coolant.
[0050]
Next, ozone gas of a predetermined concentration is supplied from the ozone gas generator 53 to the gas storage chamber 45 of each processing gas supply head 30 via the pipe 54 and each ozone gas flow path 39, and the supplied ozone gas is supplied to each gas storage chamber. The gas is discharged toward the surface of the substrate K through the ventilation path of the gas permeable member 40 provided in the gas supply chamber 45. However, the internal pressure in each gas retention chamber 45 increases, and the pressure in each gas retention chamber 45 becomes substantially equilibrium. Then, the ozone gas is discharged from the entire area of each permeable member 40 at a substantially uniform speed. That is, the ozone gas supplied to each gas retaining chamber 45 is discharged toward the surface of the substrate K in a state where the ozone gas is diffused at a substantially uniform speed by each permeable member 40.
[0051]
The ozone gas discharged from the entire area of each permeable member 40 at a substantially uniform speed respectively reaches the surface of the substrate K immediately below each ventilation path, and the ozone (O ₃ ) in the ozone gas becomes oxygen (O ₂ ). And active oxygen (O ^* ), the active oxygen (O ^* ) forms an oxide film on the surface of the substrate K, modifies the oxide film on the surface of the substrate K, and further degrades the oxide film on the surface of the substrate K. The resist film formed on the K surface is removed by a thermochemical reaction with active oxygen (O ^* ), and the reacted ozone gas flows along the surface of the substrate K. Outflows as appropriate.
[0052]
In this way, the surface of the substrate K transported by the transport rollers 10 is sequentially processed by the ozone gas discharged from each processing gas supply head 30.
[0053]
As described above, according to the ozone treatment apparatus 1 of the present embodiment, after the ozone gas is supplied and filled into each gas retaining chamber 45, the ozone gas is discharged from the ventilation path formed over the entire area of each permeable member 40. The velocity of the ozone gas discharged from each air passage can be made substantially uniform over the entire area of each air permeable member 40, and the entire area of the substrate K facing each air permeable member 40 can be substantially uniformly processed. Can be.
[0054]
That is, if the velocity of the ozone gas discharged from each of the permeable members 40 is uniform, the supply amount of the ozone gas supplied to the processing region of the substrate K per time becomes uniform in the processing region. The amount of generated active oxygen is uniform over the entire processing region of the substrate K, and as a result, the substrate K can be uniformly processed.
[0055]
The substrate K is cooled by contact with the ozone gas at a predetermined flow rate. However, if the velocity of the discharged ozone gas is uniform, the temperature drop in the entire processing region of the substrate K in contact with the ozone gas becomes uniform, and the surface of the substrate K is cooled. The temperature becomes uniform. For this reason, the active oxygen generation efficiency becomes uniform over the entire processing region of the substrate K, and in this sense, as described above, the substrate K can be uniformly processed.
[0056]
Further, since the processing is performed while the substrate K is transported by the transport roller 10, the processing can be continuously performed, and the substrate K can be efficiently processed.
[0057]
In the ozone treatment, it is preferable that the processing gas supply heads 30 be as close as possible to the substrate K. The distance g between each air permeable member 40 and the substrate K should be 0.2 mm or more and 1 mm or more. It is preferably not more than 0.4 mm. When the distance g exceeds 1.4 mm, the time required for the discharged ozone gas to reach the surface of the substrate K becomes longer, and during that time, the ozone concentration decreases due to thermal decomposition or the ozone gas diffuses into the atmosphere. This is because uniform and efficient processing cannot be performed. On the other hand, if the distance g is less than 0.2 mm, problems such as difficulty in exhausting the ozone gas from between the air-permeable members 40 and the substrate K and a problem in manufacturing the device occur.
[0058]
Further, since the atmosphere temperature in the processing chamber 5 becomes high by being heated by the heater 20, each processing gas supply head 30 is heated by the high temperature atmosphere or the like. Since the coolant 30 is cooled by the coolant flowing through the coolant passage 36, the ozone gas in each gas retaining chamber 45 can be cooled by the coolant, and the temperature can be kept within a certain range. Can be maintained. Thus, it is possible to prevent the ozone concentration in the ozone gas from decreasing.
[0059]
Further, the heating temperature of the substrate K is preferably in the range of 200 ° C to 500 ° C. Within this range, the impurities contained in the substrate K can be evaporated at the same time as the above processing. Further, the ozone gas preferably contains ozone of 14% by weight or more, and may be a mixed gas of ozone and TEOS (Tetraethyl orthosilicate, tetraethyl silicate, Si (C ₂ H ₅ O) ₄ ).
[0060]
As mentioned above, although one Embodiment of this invention was described, the specific aspect which this invention can take is not limited to this at all.
[0061]
In the above example, the two processing gas supply heads 30 are arranged at predetermined intervals along the transport direction of the substrate K. However, the present invention is not limited to this. The number of processing gas supply heads 30 to be provided may be set as appropriate.
[0062]
Further, the processing gas supply head 30 is disposed only above the substrate K transported by the transport roller 10, but as shown in FIG. Can be arranged. In this way, when a resist film is formed on the front surface (upper surface) of the substrate K, the resist that has partially adhered to the back surface (lower surface) of the substrate K can be effectively removed.
[0063]
Further, in the above example, the processing gas supply head 30 formed as a single unit is disposed so as to face the entire width of the substrate K along the direction indicated by the arrow D, but the present invention is not limited to this. As shown in FIG. 6, a plurality of processing gas supply heads 70 and 73 are arranged in the direction indicated by the arrow D so that gaps 72 and 75 are formed between the adjacent processing gas supply heads 70 and 73. It is good also as composition arranged in the same plane.
[0064]
The ozone gas discharged from the vicinity of the center of the processing gas supply head is easily replaced with the unreacted ozone gas sequentially supplied, and the surface of the substrate K corresponding to the vicinity of the center is treated with the ozone gas having a stable concentration. At the peripheral portion from the center, the ozone gas after the reaction is hard to be replaced by the newly supplied unreacted ozone gas, and these are mixed to reduce the ozone concentration, thereby lowering the treatment efficiency as compared with the vicinity of the central portion. I hate it.
[0065]
Therefore, a plurality of processing gas supply heads having a size capable of performing uniform processing are prepared, and these are arranged on the same plane so that gaps 72 and 75 are formed between the adjacent processing gas supply heads 70 and 73. According to the above configuration, the ozone gas after the reaction is exhausted from the gaps 72 and 75, so that the entire area of the surface of the substrate K to be processed by the processing gas supply heads 70 and 73 is more uniformly processed. It becomes possible.
[0066]
In this case, the planar shapes of the processing gas supply heads (upper member, lower member, and gas permeable member) 70 and 73 are not limited to hexagons and triangles as shown in FIGS. Various shapes are possible.
[0067]
Alternatively, the processing gas supply head 30 in the above example may be a processing gas supply head 60 in which a plurality of gas retaining chambers 63 are formed as shown in FIG. As shown in FIG. 7, the processing gas supply head 60 includes a block-shaped upper member 62 in which a plurality of cooling liquid flow paths 61 are formed, and a substrate K fixedly provided on the lower surface of the upper member 62. A housing-like lower member 65 having a plurality of gas retaining chambers 63 opened on the facing surface (lower surface) and a plurality of ozone gas flow paths 64 communicating with the respective gas retaining chambers 63, and an opening of each gas retaining chamber 63 66 and a plurality of air-permeable members 67 provided to close each of them. The upper member 62 and the lower member 65 have a plurality of air-permeable members so as to open on the upper and lower surfaces of the processing gas supply head 60, respectively. Each through hole 68 is formed.
[0068]
Even in this case, since the ozone gas after the reaction is exhausted from the through holes 68, the size of each gas retaining chamber 63 is set to a size such that the ozone gas after the reaction can be favorably replaced with the unreacted ozone gas. By doing so, the processing region on the surface of the substrate K can be processed more uniformly over the entire region.
[0069]
Further, the processing gas supply head 30 is instead fixed to the upper member 35, the lower member 37, and the gas permeable member 40 and the side surfaces of the upper member 35 and the lower member 37 as shown in FIG. The processing gas supply head 80 may include a side member 81 having an intake port 83 opened on the lower surface facing the substrate K. An exhaust passage 82 is formed in the side member 81, and an intake device (not shown) including a vacuum pump or the like is connected to the exhaust passage 82. Further, as shown in FIG. 9, the side members 81 may be provided at positions facing each other with the gas retaining chamber 45 interposed therebetween.
[0070]
In this way, the ozone gas discharged from the air permeable member 40 and flowing along the surface of the substrate K is taken in by the suction device (not shown) through the suction port 83 of the side member 81 and the exhaust channel 82. Then, it can be appropriately discharged out of the processing chamber 5. Thereby, the ozone gas staying between the permeable member 40 and the substrate K can be effectively discharged from between the permeable member 40 and the substrate K, and the ozone treatment can be performed more efficiently. It becomes possible.
[Brief description of the drawings]
FIG. 1 is a plan view showing a schematic configuration of an ozone treatment apparatus according to an embodiment of the present invention.
FIG. 2 is a side view in the direction of arrow A in FIG.
FIG. 3 is a cross-sectional view illustrating a schematic configuration of a processing gas supply head according to the embodiment.
FIG. 4 is a front view showing a schematic configuration of an ozone treatment apparatus according to another embodiment of the present invention.
FIG. 5 is a bottom view showing a schematic configuration of a processing gas supply head according to another embodiment of the present invention.
FIG. 6 is a bottom view showing a schematic configuration of a processing gas supply head according to another embodiment of the present invention.
FIG. 7 is a cross-sectional view illustrating a schematic configuration of a processing gas supply head according to another embodiment of the present invention.
FIG. 8 is a cross-sectional view illustrating a schematic configuration of a processing gas supply head according to another embodiment of the present invention.
FIG. 9 is a cross-sectional view illustrating a schematic configuration of a processing gas supply head according to another embodiment of the present invention.
FIG. 10 is a sectional view showing a schematic configuration of an ozone treatment apparatus according to a conventional example.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Ozone processing apparatus 5 Processing chamber 10 Transport roller 20 Heater 30 Processing gas supply head 35 Upper member 36 Coolant channel 37 Lower member 39 Ozone gas channel 40 Gas permeable member 45 Gas retention chamber 50 Coolant circulator 53 Ozone gas generator 55 Exhaust device K Substrate

Claims (7)

Transport means for supporting the substrate and transporting in a direction along the substrate surface,
Heating means for heating the substrate transferred by the transfer means,
A processing gas supply head that is disposed so as to face a transfer surface of the transfer unit, and that discharges a processing gas containing ozone toward a substrate transferred by the transfer unit;
An ozone treatment apparatus comprising: a gas supply unit that supplies the processing gas to the processing gas supply head.
The processing gas supply head is formed of a housing-shaped member having a gas storage chamber having a predetermined internal volume opened on a surface opposite to the transfer surface of the transfer means, and the opening is provided with a ventilation hole penetrating from front to back. It is closed by a plate-shaped breathable member having a large number of roads over the entire area,
The processing gas supplied from the gas supply unit is filled in the gas retention chamber, discharged through each ventilation path of the permeable member, and sprayed on the substrate surface transported by the transportation unit. An ozone treatment apparatus characterized in that: 2. The ozone treatment apparatus according to claim 1, wherein a plurality of the processing gas supply heads are disposed on the same plane so that a gap is formed between each adjacent processing gas supply head. The processing gas supply heads are disposed on both sides of the transfer surface of the transfer unit, respectively, and the processing gas discharged from the processing gas supply head is sprayed on both front and back surfaces of the substrate transferred by the transfer unit. The ozone treatment apparatus according to claim 1, wherein the ozone treatment apparatus is configured to be capable of being operated. A plurality of the processing gas supply heads are respectively disposed on both sides of the transfer surface of the transfer means, and a gap is formed between the processing gas supply heads on each side and the adjacent processing gas supply heads. 4. The ozone treatment apparatus according to claim 3, wherein the ozone treatment apparatus is disposed on the same plane. Forming a plurality of the gas storage chambers in the processing gas supply head, and closing the openings of the gas storage chambers with the gas-permeable members,
Between the respective gas retention chambers, forming through holes respectively penetrating the upper and lower surfaces of the processing gas supply head,
The ozone treatment apparatus according to claim 1, wherein the gas supply unit is configured to supply the processing gas to each of the gas retention chambers. The ozone according to any one of claims 1 to 5, wherein the processing gas supply head is disposed such that a distance between the gas permeable member and the substrate is 0.2 mm or more and 1.4 mm or less. Processing equipment. The processing gas supply head includes a flow path through which a cooling fluid flows, above the gas retention chamber,
The ozone treatment apparatus further comprises a cooling fluid circulating means for supplying and circulating a cooling fluid in the flow path,
The ozone treatment apparatus according to any one of claims 1 to 6, wherein the processing gas in the gas retaining chamber is cooled by a cooling fluid flowing in the flow path.

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