JP2004185982A - Surge absorption device and surge absorption circuit - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To enable to perform an insulation performance test with surge restrained in a low voltage, with high insulation performance and without separating the grounding connection of an equipment used. <P>SOLUTION: A discharge gap device 1 has a first and a second electrodes 7, 6 constituting a first discharge gap 9, and a third electrode 8, constituting a second discharge gap 10 having a lower discharge starting voltage than the discharge gap 9 together with a second electrode 6. A capacitor 2 and an inductor 3 are arranged to the discharge gaps 9, 10 of the device 1 respectively. Since frequency characteristics in impedance of the capacitor 2 and the inductor 3 are different, a low frequency voltage is impressed mainly on the discharge gap 9 side, and a surge voltage including a high frequency component is impressed mainly on the discharge gap 10 side. <P>COPYRIGHT: (C)2004,JPO&NCIPI

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a surge absorbing device, and particularly to a surge absorbing device and a surge absorbing circuit suitable for protecting various electric and electronic devices from a lightning surge and a switching surge caused by devices installed in a circuit.
[0002]
[Prior art]
2. Description of the Related Art In recent years, control functions of various types of industrial and consumer devices have been made semiconductor. Semiconductor technology has also been rapidly introduced into household electric appliances such as air conditioners and cooking related appliances. In addition, in order to incorporate them into a network and enhance the convenience thereof, so-called information home appliance systems have been put into practical use. ing.
[0003]
With the improvement of the integration degree and the miniaturization of the internal pattern due to the improvement of the integration degree, efforts are being made to reduce the driving voltage and the power consumption of the semiconductor element, and the resistance to surge and the like tends to be further reduced. is there.
[0004]
Generally, in order to protect electrical and electronic equipment from surges such as lightning surges and switching surges, voltage-dependent nonlinear elements (varistors) and discharge gap elements (hereinafter collectively referred to as arrester elements) are used alone or individually. It has been widely practiced to connect the power supply system or the information transmission system between the line and the ground or between the lines. As mentioned above, as the surge resistance of equipment decreases, these elements are required to operate at lower voltage levels than before, while maintaining the insulation performance of equipment at at least the same level as before. Must. For this purpose, when testing the insulation performance of electric or electronic equipment, it is necessary to take measures to prevent the arrester element from conducting at the test voltage.
[0005]
Meanwhile, as a typical method for testing the insulation performance of a device, there is a method in which an arrester element is temporarily separated from a power supply line and a ground to apply a test voltage so that no voltage is applied to them. According to this method, there is an advantage that the insulation performance test can be performed even if an arrester element having a discharge starting voltage lower than the test voltage is used. However, according to this method, a complicated operation of disconnecting the ground connection as described above is required at the time of the test, and there is no need to reconnect it after the test. There is also a risk of forgetting to connect.
[0006]
In order to eliminate the complexity of the test procedure, connect a relay device with normally closed contacts to the arrester element in series, and turn off this relay device prior to the insulation performance test. An apparatus has been proposed in which the arrester element is temporarily disconnected from between the power supply line and the ground (for example, see Patent Document 1). Alternatively, paying attention to the fact that the insulation performance test is performed with the power supply lines short-circuited, using a normally open type relay device, connecting the excitation coil between the power supply lines, and connecting the contact mechanism to the arrester element There is also proposed a device in which the contact mechanism is turned off during an insulation performance test of the device and turned on in a normal use condition (for example, see Patent Document 2).
[0007]
As still another method, there is a method in which a varistor element is configured by connecting a varistor and a discharge gap element in series, and a discharge starting voltage of the discharge gap element is set to a voltage that can withstand an insulation performance test. Although this method has the advantage that it is not necessary to disconnect the arrester element during the insulation performance test, the surge voltage applied level is determined by the discharge starting voltage of the discharge gap element, so it becomes extremely high, and the semiconductor element is mounted. It is not practical to apply it to electrical and electronic equipment that has been used. Furthermore, the insulation against surges between the power supply line and ground must be increased, and when using an isolation transformer, the amount of surge attenuation due to capacitive coupling between the primary and secondary windings should be reduced. Required insulation design, which leads to an increase in cost of applied equipment.
[0008]
Therefore, the former method is more practical than the latter method in order to realize a device having excellent insulation performance while keeping the surge suppression level low.
[0009]
[Patent Document 1]
Japanese Patent Application Laid-Open No. 2001-286057, page 3-4, FIG.
[Patent Document 2]
JP-A-8-205393, page 2-3, FIGS. 1, 4, and 5
[0010]
[Problems to be solved by the invention]
According to the device embodying the former method, the arrester element is disconnected from the power supply and the ground by operating the relay at the time of the test, and the arrester element is restored after the test is completed. Therefore, the work of the insulation performance test becomes extremely easy. . However, a device to be used only at the time of a test must be newly added, which complicates the configuration of the device and increases the size of the device used. In addition, since a contact mechanism is provided, a highly reliable relay device must be used, which increases the cost of equipment used.
[0011]
Therefore, in order to further reduce the drive voltage of semiconductor devices used in various devices and further promote the practical use of new devices suitable for information home appliances systems, lower voltage than ever before There is a strong demand for devices and circuits that can protect equipment from level surges and that can perform insulation performance tests without disconnecting the arrester element between the power supply line and ground. It is necessary to suppress the surge voltage to a predetermined voltage or less without being affected by the magnitude of the surge current. In particular, this is more strongly desired between power supply lines.
[0012]
The present invention has solved such a problem, and has a high insulation performance, can suppress a surge to a low voltage, and can provide an insulation performance without disconnecting a ground connection of equipment. Provided are a surge absorbing device and a surge absorbing circuit capable of performing a test.
[0013]
[Means for Solving the Problems]
According to the surge absorbing device of the present invention, the second discharge having a lower firing voltage than the first discharge gap between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode forming a gap, a first electrode connected between the first and second electrodes, having a low impedance characteristic in a high frequency region and a high impedance characteristic in a low frequency region; An impedance element, and a second impedance element connected between the second and third electrodes, having high impedance characteristics in a high frequency region and low impedance characteristics in a low frequency region.
[0014]
According to the surge absorbing device of the present invention, the second discharge having a lower firing voltage than the first discharge gap between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode forming a gap, a voltage-dependent nonlinear element having one terminal connected to the first electrode, a low impedance characteristic in a high frequency region, and a high impedance characteristic in a low frequency region A first impedance element connected between the first electrode of the discharge gap element and the other terminal of the voltage-dependent nonlinear element; and a high impedance characteristic in a high frequency region, and a high impedance characteristic in a low frequency region. A second impedance element having low impedance characteristics and connected between the second and third electrodes;
[0015]
In the surge absorbing circuit according to the present invention, the second discharge having a lower firing voltage than the first discharge gap between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode forming a gap, a voltage-dependent nonlinear element connected between the first electrode and the first line, and a voltage-dependent nonlinear element connected between the second electrode and the first line A first impedance element having a low impedance characteristic in a high frequency region and a high impedance characteristic in a low frequency region, and a high frequency element connected between the third electrode and the second line; A second impedance element having high impedance characteristics in a region and low impedance characteristics in a low frequency region is provided.
[0016]
In the surge absorbing circuit according to the present invention, the second discharge having a lower firing voltage than the first discharge gap between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode forming a gap; a plurality of voltage-dependent nonlinear elements connected between the first electrode and the plurality of lines; A plurality of first impedance elements connected between the plurality of first impedance elements having low impedance characteristics in a high frequency region and high impedance characteristics in a low frequency region, and between a second electrode and the third electrode; A second impedance element having a high impedance characteristic in a high frequency range and a low impedance characteristic in a low frequency range, and a third electrode connected to ground. That.
[0017]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0018]
(Embodiment 1)
[0019]
FIG. 1 is a diagram for explaining a surge absorbing device according to a first embodiment. FIG. 1A is a conceptual diagram of the structure of the device, and FIG. 1B is an equivalent circuit diagram thereof.
[0020]
As shown in FIG. 1A, this surge absorbing device includes a discharge gap element 1, a capacitor 2 as a first impedance element, and an inductor 3 as a second impedance element. The capacitor 2 has a frequency-impedance characteristic in which the impedance is low in a high frequency region and high in a low frequency region. Further, the inductance 3 exhibits the opposite frequency-impedance characteristic, and the impedance is high in a high frequency region and low in a low frequency region.
[0021]
The discharge gap element 1 seals two insulating tubular bodies 4 and 5 having different lengths, an annular electrode 6 for connecting them in an airtight state, and an open end of the tubular bodies 4 and 5. And an inert gas such as argon, helium, or a mixed gas thereof, or SF.₆Are sealed at a predetermined pressure.
[0022]
The cylindrical bodies 4 and 5 are made of ceramics such as alumina porcelain or glass, and have a cylindrical, quadrangular or polygonal cylindrical shape. The electrodes 6, 7, 8 are made of a metal having a high melting point, such as tungsten, tantalum, molybdenum, niobium, and vanadium, and chromium, titanium, iron, cobalt, nickel, manganese, copper, and aluminum having a relatively lower melting point. Furthermore, it is composed of those alloys. The electrode 6 has an annular shape, and has an inner diameter smaller than the inner diameters of the cylindrical bodies 4 and 5 and an outer diameter equal to or larger than the outer diameters of the cylindrical bodies 4 and 5. The electrodes 7 and 8 are disk-shaped and have protrusions on the surfaces facing each other. In addition, they may be cap-shaped, and their shapes are not particularly limited as long as their appearance does not affect the firing voltage.
[0023]
The electrodes 6 and 7 form a first discharge gap 9 and the electrodes 6 and 8 form a second discharge gap 10. Each gap length, that is, the distance between the electrodes is set in accordance with the firing voltage. In this example, the distance between the electrodes 7 and 6 is made larger than the distance between the electrodes 6 and 8 by making the size of the cylindrical body 4 longer than that of the cylindrical body 5, and the discharge starting voltage of the discharge gap 9 is reduced. It is configured to be higher than that of. Thus, the discharge starting voltage between the electrodes 7 and 6 is set to a voltage that can withstand a predetermined insulation performance test, and the voltage between the electrodes 6 and 8 is set to a voltage at a surge suppression level.
[0024]
One electrode of each of the capacitor 2 and the inductor 3 is connected to the electrode 6 of the discharge gap element 1. The other electrode of the capacitor 2 is connected to the terminal 11 together with the electrode 7 of the discharge gap element 1, and the other electrode of the inductor 3 is connected to the terminal 12 together with the electrode 8 of the discharge gap element 1. That is, in the surge absorbing device of the present embodiment, capacitor 2 and inductor 3 are connected in parallel with discharge gap 10 and 10, respectively.
[0025]
When a test voltage is applied between the terminals 11 and 12 of the device, a voltage divided according to the impedance ratio is applied to each of the capacitor 2 and the inductor 3.
[0026]
If the frequency of the test voltage is f, the capacitance of the capacitor 2 is C, and the inductance of the inductor 3 is L, the impedance X of the capacitor 2_CAnd the impedance X of the inductor 3_LAre represented by the following relational expressions.
[0027]
X_C= 1 / (2πfC)
[0028]
X_L= 2πfL
[0029]
The test voltage is V, and the divided voltage by the capacitor 2 and the inductor 3 is V_C, V_LThen, they are represented by the following relational expressions.
[0030]
V_C= ｛X_C/ (X_C ²+ X_L ²)^1/2｝ ・ V
[0031]
V_L= ｛X_L/ (X_C ²+ X_L ²)^1/2｝ ・ V
[0032]
AC voltage V at commercial power frequency in insulation performance test_INIs applied between the terminals 11 and 12 as a test voltage, since the frequency is low, the voltage V_INIs substantially applied to the capacitor 2, and is hardly applied to the inductor 3. That is, the voltage V is substantially applied between the electrodes 7 and 6, that is, in the first discharge gap 9._INIs applied between the electrodes 6 and 8, that is, the second discharge gap 10, a voltage much lower than that is applied. As is apparent from this, the insulation performance of the device depends on the characteristics of the discharge gap 9 connected in parallel with the capacitor 2. Therefore, according to the device of this embodiment, the discharge starting voltage of the discharge gap 10 connected in parallel with the inductor 3 is set to the same value as the test voltage, and the discharge gap element 1 set very low compared to the test voltage is used. In addition, an appropriate insulation test can be performed without disconnecting the terminals 11 and 12 from the ground connection.
[0033]
AC voltage V_INIs an overvoltage equal to or higher than the discharge starting voltage of the discharge gap 9, when the voltage is applied between the terminals 11 and 12, a discharge occurs in the discharge gap 9 of the discharge gap element 1. Immediately as a trigger, a discharge occurs between the electrodes 7 and 8 to absorb the overvoltage. Of course, even if the overvoltage is direct current, this type of device will perform the same response and protect it from overvoltage when it is built into the equipment.
[0034]
On the other hand, a surge test voltage, for example, a surge voltage V having a frequency of 100 kHz_SURIs applied between the terminals 11 and 12, most of the series connection of the capacitor 2 and the inductor 3 is applied to the inductor 3, and the voltage applied to the capacitor 2 becomes an extremely low value. Therefore, the surge voltage V_SURIs substantially applied to the discharge gap 10 between the electrodes 6 and 8, and a much lower voltage is applied to the space between the electrodes 7 and 6, ie, the discharge gap 9.
[0035]
Voltage V_SURIs higher than the discharge starting voltage of the discharge gap 10, a discharge is first generated in the gap 10, which triggers and immediately causes a discharge between the electrodes 7 and 8. As a result, the surge voltage applied between the terminals 11 and 12 is suppressed to the level of the sustaining voltage between the electrodes 7 and 8 of the element 1. Protect from. Furthermore, the surge responsiveness in the discharge gap 10 can be improved by selecting the circuit constant of the resonance frequency of the capacitor 2 and the inductor 3 according to the surge frequency component.
[0036]
As an example, when a capacitor having a capacitance of 0.01 μF is used as the capacitor 2 and an inductance of 0.8H is used as the inductor 3 and an AC voltage of 1600 V at a frequency of 60 Hz is applied, the voltage division by the capacitor 2 is about 1598 V, The partial pressure by 3 was about 2V. That is, it is understood that substantially the entire voltage is applied to the discharge gap 9 side, the applied voltage to the discharge gap 10 side is extremely low, and the insulation performance depends on the discharge characteristics of the discharge gap 9. Next, when a surge voltage of 1000 V at a frequency of 100 kHz is applied, the voltage divided by the inductor 3 becomes about 1000 V, the voltage divided by the capacitor 2 does not reach 1 V, and substantially all the voltage is applied to the discharge gap 10 side. Was done. This shows that the surge suppression voltage is determined by the discharge characteristics of the discharge gap 10.
[0037]
Then, at least the electrode 8 is made of a metal having a relatively low melting point, such as copper or aluminum, as compared with a high melting point material such as tungsten or molybdenum, or covers the electrode surface, or further roughens the electrode surface, By providing projections on the surface, the start of discharge between the electrodes 6 and 8 is reduced, the discharge between the electrodes 7 and 8 is reliably generated, and the surge suppression effect of the element 1 can be enhanced.
[0038]
In a normal use state, as is apparent from the above description, the voltage is substantially applied to the capacitor 2 side, that is, the discharge gap 10 having a high discharge starting voltage. The discharge gap 10 can sufficiently withstand the voltage during normal use.
[0039]
As described above, according to the device of the first embodiment, the discharge starting voltage of the discharge gap 9 on the side to which the capacitor 2 is connected in parallel is set to a voltage suitable for the insulation performance test for the device in which the device is incorporated. The test can be performed without disconnecting the power line and the ground line as in the past. Regarding the discharge gap 10 on the side where the inductor 3 is connected in parallel, the discharge starting voltage is set to a very low value in accordance with the desired surge suppression voltage level without particular consideration of the insulation performance test voltage. This makes it possible to extremely easily realize the surge resistance required for the applied device.
[0040]
Therefore, even devices that use devices with extremely low withstand voltage characteristics, such as semiconductor devices, have good insulation performance, and surges can be suppressed to a level low enough to protect them from damage. Not only can the surge resistance of electric devices and electronic devices be improved, but also high reliability can be maintained by incorporating it into information home appliances that are expected to spread in the future. In a system having a relatively high impedance between lines, such as an information transmission system, even if the device of this embodiment operates in response to an overvoltage or an excessive voltage surge, the generation of a follow-up current is suppressed by a voltage drop due to the line impedance, To return.
[0041]
(Embodiment 2)
[0042]
2A and 2B are diagrams for explaining a surge absorbing device as a second embodiment, in which FIG. 2A is a conceptual diagram of the structure of the device, and FIG. 2B is an equivalent circuit diagram thereof.
[0043]
This embodiment is most different from the above-described first embodiment in that a varistor 13 is inserted and connected between the electrode 7 and the terminal 11 of the discharge gap element 1, so that the subsequent flow of the discharge gap element 1 after discharge is reduced. This is a configuration that can be shut off. In the drawings, components corresponding to those in Embodiment 1 are denoted by the same reference numerals.
[0044]
Since the voltage at the time of the insulation performance test is mainly applied to the series connection of the discharge gap 9 and the varistor 13, the voltage is adapted in consideration of the operating voltage of the electric device or the electronic device using the surge absorbing device. A discharge gap element 1 having a discharge gap 9 having characteristics and a varistor 13 which is a voltage-dependent nonlinear element are used. As the varistor 13, for example, a zinc oxide varistor can be used.
[0045]
In this type of device, a low-frequency AC or DC voltage is substantially applied to the series connection of the varistor 13 and the discharge gap 9 of the element 1, whereas a surge voltage of a significantly higher frequency is substantially reduced. Is applied to the discharge gap 10. Therefore, also in the device of this embodiment, the low-frequency AC voltage or DC voltage is suppressed to the conduction voltage level of the series connection of the varistor 13 and the discharge gap 9, and the surge voltage is suppressed to the conduction voltage level of the discharge gap 10. You. Then, the insulation performance test of the applicable device can be performed without disconnecting the ground connection.
[0046]
Furthermore, according to this device, since the varistor 13 can immediately block the subsequent flow between the terminals 11 and 12 after the operation of suppressing the overvoltage and the surge voltage, the reliability of the mounted device can be improved. In particular, the device of this embodiment is useful when applied to equipment used by being connected to a power supply line having a low line impedance.
[0047]
(Embodiment 3)
[0048]
FIG. 3 is a diagram illustrating an example of a surge absorbing circuit applied to a device that receives power supply from a commercial frequency power supply according to a third embodiment.
[0049]
In this embodiment, the surge absorbing device according to the second embodiment is incorporated in a device 14, and power is supplied from a power supply 16 to a main body 15 of the device via the device. That is, the terminal 11 is connected to one power supply line 17, and the terminal 12 is grounded. The other power supply line 18 is grounded.
[0050]
According to this, as is clear from the description in the second embodiment, the insulation performance test of the device 14 can be performed without disconnecting the terminal 12 from the ground. With respect to the surge, a discharge is generated on the side of the discharge gap 10 where the discharge starting voltage is low, and the discharge is immediately triggered to cause a discharge between the electrodes 7 and 8, thereby causing the lines 17 and 18 to be disconnected. It can be suppressed to a voltage level determined by the sum of the conduction voltage of the varistor 13 and the discharge voltage between the electrodes 7 and 8. By selecting the conduction voltage of the varistor 13 in accordance with the steady voltage between the lines 17 and 18, the voltage between the lines 17 and 18 is maintained at a predetermined voltage, and the downstream current is cut off. Therefore, the influence of the surge on the power supply 16 and the device main body 15 can be significantly reduced.
[0051]
It is needless to say that the same effect can be obtained by applying this embodiment to an information transmission system instead of the power supply system.
[0052]
Although this embodiment is an example in which the power supply line is installed between the power supply line and the ground, it goes without saying that a similar effect can be obtained when applied between the power supply lines. In this case, by setting the operation start voltage of the circuit of this embodiment lower than the voltage between the power supply line and the ground and setting the surge suppression voltage by the discharge gap element and the varistor much lower, the circuit is directly connected between the lines. It is possible to reduce the withstand voltage level with respect to the semiconductor device, thereby alleviating restrictions on the use of the semiconductor device and increasing the surge resistance of the equipment used.
[0053]
(Embodiment 4)
[0054]
FIG. 4 is a diagram illustrating a surge absorbing circuit according to a fourth embodiment.
[0055]
In this embodiment, the configuration of the surge absorber of the second embodiment is partially modified and used.
[0056]
That is, one terminal of the two varistors 13-1 and 11-2 is connected to the electrode 7 of the discharge gap element 1, and one terminal of the two capacitors 2-1 and 2-2 is connected to the electrode 6. 11-1 and 11-2 are connected. Further, the other terminals of the varistor 13-1 and the capacitor 2-1 are connected to one power supply line 19-1, and the other terminals of the varistor 13-2 and the capacitor 2-2 are connected to the other power supply line 19-2. Have been. The electrode 12 of the discharge gap element 1 is grounded. Of course, the electrode 12 may be connected to a ground line.
[0057]
This device is used by being incorporated in the device 20. When the device main body 22 receives power from the power source 21, a surge occurs in one of the lines 19-1 and 19-2, for example, the line 19-1. At this time, a discharge is first caused on the discharge gap 10 side of the discharge gap element 1, whereby a discharge is immediately generated between the electrodes 7, 8 and the varistor 13-1 is energized to suppress the surge to a low voltage level. Holds the voltage between line 19-1 and ground. Since the varistors 13-1 and 13-2 are connected and inserted in series between the lines 19-1 and 19-2, the voltage between the lines 19-1 and 19-2 is also the conduction voltage of those lines. Since the voltage is maintained at a voltage equal to the sum, the power supply 21 and the device 20 are effectively protected from surge. Of course, when a surge occurs in the line 19-2 and also in the two lines 19-1 and 19-2, the surge can be similarly suppressed to a low voltage level. Also in this case, the varistors 13-1 and 13-2 can cut off the subsequent current after the surge is suppressed, and can maintain the voltage between the lines 19-1 and 19-2 at a predetermined value.
[0058]
It is needless to say that the same effect can be obtained by applying this embodiment to an information transmission system instead of the power supply system.
[0059]
【The invention's effect】
According to the present invention, a discharge gap having a different firing voltage is arranged in the discharge gap element, and a low impedance characteristic in a high frequency region and a low impedance characteristic are provided in parallel with the first discharge gap having a high firing voltage. A first impedance element having a high impedance characteristic in a region and a second impedance having a low impedance characteristic in a high frequency region and a second impedance having a low impedance characteristic in a low frequency region in parallel with a second discharge gap having a low firing voltage. Are arranged so that an AC voltage or a DC voltage having a low frequency such as a commercial power supply frequency is substantially on the first discharge gap side, and a surge voltage including a high frequency component is generated on the second impedance element. Respectively. As a result, the discharge starting voltage of the first discharge gap is set to a value that satisfies predetermined insulation performance test conditions, and the discharge starting voltage of the second discharge gap corresponds to the withstand voltage performance of the circuit element incorporated in the device. By setting the voltage to the above value, the surge can be suppressed to a lower voltage level, and the insulation performance test can be performed without disconnecting the ground connection of the equipment used. Further, by connecting a voltage-dependent nonlinear element in series with the discharge gap element on the first discharge gap side, it is possible to cut off a follow-up current after the operation of the device against an overvoltage or a surge.
[0060]
Further, one end of each of the plurality of voltage-dependent nonlinear elements is arranged between the corresponding line and the first discharge gap of the discharge gap element, and each of the lines has a second impedance between the line and the common second impedance element. Since the impedance element is located, surge can be suppressed to a lower voltage level, and the insulation performance test can be performed without disconnecting the ground connection of the equipment used. It can be regulated by the conduction voltage of the nonlinear element.
[Brief description of the drawings]
FIG. 1A is a diagram showing a structure of a surge absorbing device according to a first embodiment of the present invention, and FIG. 1B is a circuit diagram thereof.
FIG. 2A is a diagram showing a structure of a surge absorbing device according to a second embodiment of the present invention, and FIG. 2B is a circuit diagram thereof.
FIG. 3 is a diagram showing a configuration of a surge absorbing circuit according to Embodiment 3 of the present invention.
FIG. 4 is a diagram showing a configuration of a surge absorbing circuit according to a fourth embodiment of the present invention.
[Explanation of symbols]
1 Discharge gap element
2 Capacitor
2-1 and 2-2 capacitors
3 Inductor
4,5 Insulating tubular body
6,7,8 electrode
9,10 Discharge gap
11, 12 terminals
11-1 and 11-2 terminals
13 Varistor
13-1, 13-2 Varistor
14 Equipment incorporating a surge absorber
15 Main unit
16 Power supply
17, 18 Power line
19-1, 19-2 Power line
20 equipment
21 Power supply
22 Main unit

Claims (12)

A second discharge gap having a lower firing voltage than the first discharge gap is formed between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode;
A first impedance element connected between the first electrode and the second electrode, having a low impedance characteristic in a high frequency region and having a high impedance characteristic in a low frequency region, and
A surge absorbing device having a second impedance element connected between the second electrode and the third electrode, having a high impedance characteristic in a high frequency region and a low impedance characteristic in a low frequency region. 2. The surge absorber according to claim 1, wherein a distance between the first electrode and the second electrode of the discharge gap element is longer than a distance between the second electrode and the third electrode. 3. apparatus. The surge absorber according to claim 1, wherein the second electrode is made of a metal having a lower melting point than a metal having a high melting point. In the discharge gap element, a discharge start voltage of the first discharge gap is set according to an insulation test voltage, and a discharge start voltage of the second discharge gap is set according to a surge voltage suppression level. The surge absorber according to claim 1, wherein The surge absorber according to claim 1, wherein the first impedance element is a capacitor, and the second impedance element is an inductor. A second discharge gap having a lower firing voltage than the first discharge gap is formed between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode;
A voltage-dependent nonlinear element having one terminal connected to the first electrode;
A first terminal connected between the first electrode of the discharge gap element and the other terminal of the voltage-dependent nonlinear element, having a low impedance characteristic in a high frequency region and a high impedance characteristic in a low frequency region. Impedance element, and
A surge absorbing device having a second impedance element connected between the second electrode and the third electrode, having a high impedance characteristic in a high frequency region and a low impedance characteristic in a low frequency region. The surge absorber according to claim 6, wherein a distance between the first electrode and the second electrode of the discharge gap element is longer than a distance between the second electrode and the third electrode. apparatus. The surge absorber according to claim 6 or 7, wherein the second electrode is made of a metal having a lower melting point than a metal having a high melting point. In the discharge gap element, a discharge start voltage of the first discharge gap is set according to an insulation test voltage, and a discharge start voltage of the second discharge gap is set according to a surge voltage suppression level. The surge absorber according to claim 6, wherein The surge absorber according to claim 6, wherein the first impedance element is a capacitor, and the second impedance element is an inductor. A second discharge gap having a lower firing voltage than the first discharge gap is formed between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode;
A voltage-dependent nonlinear element connected between the first electrode and a first line;
A first impedance element connected between the second electrode and the first line, having a low impedance characteristic in a high frequency region and having a high impedance characteristic in a low frequency region; and
A second impedance element connected between the third electrode and the second line, the second impedance element having high impedance characteristics in a high frequency region and low impedance characteristics in a low frequency region. Surge absorption circuit. A second discharge gap having a lower firing voltage than the first discharge gap is formed between the first and second electrodes forming the first discharge gap and the second electrode. A discharge gap element having a third electrode;
A plurality of voltage-dependent nonlinear elements respectively connected between the first electrode and a plurality of lines,
A plurality of first impedance elements connected between the second electrode and the plurality of lines, each having a low impedance characteristic in a high frequency region, and having a high impedance characteristic in a low frequency region;
A second impedance element connected between the second electrode and the third electrode, having a high impedance characteristic in a high frequency region, and having a low impedance characteristic in a low frequency region;
A surge absorbing circuit, wherein the third electrode is connected to a ground.

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