JP2004179329A - Semiconductor device and manufacturing method therefor - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To solve a problem that no improvement is achieved in the characteristics of an MIS (Metal Insulator Semiconductor) type transistor due to insufficient supply of hydrogen to a gate insulating film of the transistor. <P>SOLUTION: A catalytic material is provided in the vicinity of the gate insulating film so that hydrogen molecules diffused in a semiconductor device are converted to hydrogen molecules of high reactivity by a catalytic action, and that dangling bonds of the gate insulating film are efficiently terminated by hydrogen atoms. Thus, characteristics of the transistor can be improved even when diffused hydrogen molecules are small in amount. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, to a semiconductor device having a MIS element and a method for manufacturing the same.
[0002]
[Prior art]
In a manufacturing process of a MIS (Metal Insulator Semiconductor) transistor, a heat treatment is performed in an atmosphere containing hydrogen immediately before an assembly process in order to improve various characteristics of the transistor. The atmosphere containing hydrogen is, for example, a pure hydrogen atmosphere or a nitrogen gas atmosphere (or an argon gas atmosphere) containing about 3% to 20% of hydrogen, and the heat treatment temperature is about 400 to 450 ° C. This heat treatment is performed mainly for the purpose of terminating dangling bonds of the gate insulating film of the transistor with hydrogen to eliminate the interface state of the gate insulating film, that is, to improve the characteristics of the transistor. However, the prior art has the following problems.
[0003]
As described above, the heat treatment is performed in an atmosphere containing hydrogen. In a recent semiconductor device having a logic circuit, since there are ten or more wirings over a transistor, diffusion of hydrogen into the transistor is suppressed, and Difficult to reach the insulating film. Therefore, it is becoming difficult to improve the characteristics of the transistor even when the heat treatment is performed in an atmosphere containing hydrogen. In order to sufficiently improve the characteristics of the transistor, it is effective to perform a heat treatment at a high temperature of 450 ° C. or higher. However, the resistance of the Cu or Al wiring is increased and the interlayer film is peeled off. Problem arises. Therefore, it is conceivable to perform heat treatment at a low temperature of 400 ° C. or lower in a hydrogen radical atmosphere. However, since the free path of the hydrogen radical is short, the hydrogen radical does not reach the gate insulating film of the transistor.
[0004]
There has been an example in which a hydrogen-containing film is provided on a MIS transistor in order to allow hydrogen to reach a gate insulating film (for example, see Patent Document 1). However, since the thickness of the hydrogen-containing film is small, there is a problem that sufficient hydrogen cannot be supplied to the gate insulating film of the transistor.
[0005]
[Patent Document 1] JP-A-2002-16249 (page 2-5, FIG. 1)
[0006]
[Problems to be solved by the invention]
As described above, from the viewpoint of improving various characteristics of a transistor, it is important to terminate a dangling bond of a gate insulating film with hydrogen. Further, there has been a problem that sufficient hydrogen cannot be supplied to the gate insulating film without the adverse effect such as peeling of the interlayer film.
[0007]
Therefore, an object of the present invention is to provide a semiconductor device capable of sufficiently improving the characteristics of a transistor even when a low-temperature heat treatment is performed in an atmosphere containing hydrogen, and a method for manufacturing the same.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, one aspect of the present invention is to arrange a material having a catalytic action for converting molecules into atoms in the vicinity of a transistor of a semiconductor device. Therefore, when a semiconductor device is heat-treated in an atmosphere containing hydrogen, hydrogen molecules diffused in the semiconductor device are converted into hydrogen atoms by contacting a material having a catalytic action, and the hydrogen atoms of the transistor are converted by the hydrogen atoms. This is to improve the characteristics.
[0009]
The semiconductor device includes, for example, in a semiconductor device having a MIS transistor, an MIS transistor formed over a semiconductor substrate, an insulating film formed over the MIS transistor, and an insulating film formed over the insulating film. A contact hole for a gate electrode or a source / drain region of a MIS transistor, a conductive material having a catalytic action of converting molecules into atoms, and a conductive material different from the material are provided in the contact hole. A semiconductor device characterized by being formed.
[0010]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the scope of protection of the present invention is not limited to the following embodiments, but extends to the inventions described in the claims and their equivalents.
[0011]
(First Embodiment)
FIG. 1 is a sectional view showing the structure of the first embodiment of the present invention. In FIG. 1, a semiconductor substrate 1 is, for example, a silicon substrate. A MIS (Metal Insulator Semiconductor) transistor is formed on a silicon substrate. This MIS transistor includes a gate insulating film 2, a gate electrode 3, a source region 4, a drain region 5, and a metal silicide 6. When the semiconductor substrate is silicon, a silicon oxide film or a silicon oxynitride film is used for the gate insulating film 2. Gate electrode 3 is made of a conductive material, and a polycrystalline silicon film containing impurities is used. The source region 4 and the drain region 5 are conductive regions in which impurity ions are implanted by an ion implantation method and the impurities are activated by a heat treatment. The metal silicide 6 is a film used to lower the resistance of the gate electrode 3, the source region 4, and the drain region 5, and is a compound of metal and silicon. The metal is, for example, Co (cobalt), W (tungsten), Ti (titanium), Ta (tantalum), Pt (platinum), or the like.
[0012]
The MIS transistor is insulated from other elements by the element isolation region 7. In this embodiment, insulation from other elements is achieved by burying an oxide film.
[0013]
On this structure, an insulating film 8 is formed. The insulating film may be a single-layer film or a multilayer film including two or more insulating films. A contact hole 9 is provided in the insulating film, and is filled with a conductive material in order to establish connection with an upper wiring film or the like. As the conductive substance, two or more different materials are used. For example, the contact hole 9 is filled with a conductive material 11 having a catalytic action for converting molecules into atoms via a barrier layer 10 for improving adhesion and preventing metal diffusion, and a buried metal 12. I have.
[0014]
Here, the barrier layer 10 is a laminated film (Ti is a lower layer) made of, for example, TiN (titanium nitride) / Ti (titanium). Ti has high adhesion, and TiN has a high effect of suppressing metal contamination. In addition, the conductive material 11 having a catalytic action of converting molecules into atoms is, for example, Ru (ruthenium), Pd (palladium), Pt (platinum), or the like, but is not limited thereto. A characteristic property of these materials is that they are highly reactive, and when they come into contact with a substance at the molecular level, they convert the substance to the atomic level. Further, the buried metal 12 is, for example, a high melting point metal such as W (tungsten).
[0015]
When the semiconductor device having the above structure is heat-treated in an atmosphere containing hydrogen, hydrogen diffuses in the semiconductor device and comes into contact with the conductive material 11 having a catalytic action. At this time, a hydrogen molecule is converted into a hydrogen atom by the above-mentioned catalysis. Since hydrogen atoms are more reactive than hydrogen molecules, they have a strong effect of terminating dangling bonds of the gate insulating film 2. Since the distance between the conductive material having a catalytic action and the gate insulating film 2 is short, the hydrogen atoms are efficiently supplied to the gate insulating film 2. Further, since the reactivity is high, even if the amount is small, dangling bonds of the gate insulating film 2 can be effectively terminated. Therefore, various characteristics of the MIS transistor can be more effectively improved.
[0016]
Next, a manufacturing method for realizing the above structure will be described. FIG. 2 is a process sectional view illustrating the manufacturing method according to the first embodiment of the present invention. 1 are denoted by the same reference numerals.
[0017]
As shown in FIG. 2A, an MIS transistor is formed on a semiconductor substrate 1. The semiconductor substrate is, for example, a silicon substrate. The MIS transistor is formed by a known process and includes a gate insulating film 2, a gate electrode 3, a source region 4, a drain region 5, a metal silicide 6, and the like. ing.
[0018]
Next, as shown in FIG. 2B, a 30-nm SiN film (silicon nitride film) is first formed as a first insulating film by, for example, a CVD (Chemical Vapor Deposition) method. Next, 650 nm SiO 2 was used as the second insulating film. ₂ A film (silicon oxide film) is similarly formed by the CVD method. Then, the SiO (Chemical Mechanical Polishing) method is used to form the SiO 2 ₂ The film is polished to flatten the surface. Next, a contact hole 9 is opened by a known photolithography method and an etching method. As a result, for example, the metal silicide film on the gate electrode and the metal silicide film on the drain 5 are exposed.
[0019]
Next, as shown in FIG. 2C, first, 10 nm of Ti is formed, and then 10 nm of TiN is formed. Next, for example, Ru is formed as a conductive material having a catalytic action by a known sputtering method to a thickness of about 5 to 50 nm. The temperature of the semiconductor substrate at the time of sputtering is, for example, 300 ° C. Ru can also be formed by a CVD method.
[0020]
Here, if the contact hole is buried only with a conductive material having a catalytic action to form a plug, the plug is deteriorated by the subsequent heat treatment, causing a problem that a gap is formed between the contact hole and the contact hole. Therefore, it is necessary to fill the contact hole with not only a material having a catalytic action but also another conductive material.
[0021]
Then, a high melting point metal such as W is formed by a CVD method or the like. The contact hole is filled with a high melting point metal to obtain the structure shown in FIG.
[0022]
After that, the semiconductor device immediately before the assembly is subjected to a heat treatment in an atmosphere containing hydrogen through a known multilayer wiring manufacturing process. In the case of a semiconductor device having a logic circuit, if heat treatment at 400 ° C. or higher is performed, there are problems such as an increase in wiring resistance and peeling of an interlayer film. Therefore, the heat treatment temperature is as low as 400 ° C. or lower.
[0023]
According to the above-described manufacturing method, hydrogen molecules diffused in the semiconductor device by heat treatment in an atmosphere containing hydrogen come into contact with a conductive material having a catalytic action, and are converted into hydrogen atoms. The dangling bonds of the gate insulating film are efficiently terminated by the hydrogen atoms. Therefore, various characteristics of the transistor are improved.
[0024]
(Second embodiment)
FIG. 3 is a sectional view showing the structure of the second embodiment of the present invention and its modification. 3 (1) to 3 (4), the same portions are denoted by the same reference numerals. In FIG. 3A, an insulating film 20 is formed on a semiconductor substrate 1, and a first barrier layer 21, a material 22 having a catalytic action, and a second barrier layer 23 are buried therein. The figure shows an example in which the substrate is a semiconductor substrate. The insulating film 20 is made of, for example, SiO 2 ₂ Film (silicon oxide film). The first barrier layer 21 is a laminated film made of, for example, Ti and TiN. The material having a catalytic action is, for example, a metal such as Ru, Pd, and Pt. The second barrier layer 23 is a laminated film made of, for example, TiN and Ti.
[0025]
Then, a semiconductor layer 25 is formed on this structure with a laminated insulating film 24 interposed therebetween. This semiconductor layer 25 is, for example, silicon. An MIS transistor 26 is formed in the semiconductor layer 25.
[0026]
When the semiconductor device having the above structure is subjected to a heat treatment at 400 ° C. or lower in an atmosphere containing hydrogen, hydrogen molecules diffuse in the semiconductor device and come into contact with the material 22 having a catalytic action. The contacted hydrogen molecules are converted into hydrogen atoms and supplied to the gate insulating film of the MIS transistor. Then, dangling bonds of the gate insulating film are terminated. Therefore, various characteristics of the transistor are improved.
[0027]
Here, the buried catalytic material 22 and the first and second barrier layers surrounding it are located immediately below the gate insulating film. With such a structure, the distance between the material 22 having a catalytic action, which is a supply source of hydrogen atoms, and the gate insulating film becomes short, so that hydrogen atoms can be more easily supplied to the gate insulating film. Therefore, dangling bonds of the gate insulating film are efficiently terminated. Further, the presence of the laminated insulating film 24 can block the diffusion of metal from the second barrier film 23. Therefore, metal contamination can be prevented.
[0028]
FIG. 3B shows a first modification of the second embodiment. The difference from the structure described in FIG. 3A is that the laminated insulating film 24 is not formed. The second barrier layer is in direct contact with the upper semiconductor layer 25. Other structures are the same as those in FIG.
[0029]
When the semiconductor device having the structure of FIG. 3B is subjected to a heat treatment at 400 ° C. or less in an atmosphere containing hydrogen, hydrogen molecules in the atmosphere diffuse in the semiconductor device and come into contact with the material 22 having a catalytic action. Is converted to a hydrogen atom. Since the hydrogen atoms do not exist in the stacked insulating film 24, they are directly diffused into the semiconductor layer 25 and supplied to the gate insulating film, so that the dangling bonds of the gate insulating film can be more efficiently terminated. Therefore, various characteristics of the MIS transistor can be improved.
[0030]
FIG. 3C shows a second modification of the second embodiment. The difference from the structure described with reference to FIG. 3A is that a plurality of materials 22 having a catalytic action exist in the vicinity, not directly below the gate insulating film.
[0031]
When the semiconductor device having the structure of FIG. 3C is subjected to a heat treatment at 400 ° C. or lower in an atmosphere containing hydrogen, hydrogen molecules in the atmosphere diffuse in the semiconductor device and come into contact with the material 22 having a catalytic action. Is converted to a hydrogen atom. The converted hydrogen atoms can be supplied to the gate insulating film in a sufficient amount because there are a plurality of sources. Accordingly, dangling bonds of the gate insulating film can be effectively terminated, and various characteristics of the MIS transistor can be improved. Furthermore, the diffusion of metal from the second barrier film can be suppressed by the laminated insulating film 24, so that metal contamination can be prevented.
[0032]
FIG. 3D is a third modification of the second embodiment. The difference from the first modification example described with reference to FIG. 3B is that a plurality of catalytically active materials 22 exist not in the vicinity of the gate insulating film but in the vicinity thereof.
[0033]
When the semiconductor device having the structure shown in FIG. 3D is subjected to a heat treatment at 400 ° C. or lower in an atmosphere containing hydrogen, hydrogen molecules in the atmosphere diffuse in the semiconductor device and come into contact with the material 22 having a catalytic action. Is converted to a hydrogen atom. Since there are a plurality of sources of hydrogen atoms, a sufficient amount of hydrogen atoms can be supplied to the gate insulating film. Further, since there is no laminated insulating film 24, the semiconductor layer 25 is directly diffused and supplied to the gate insulating film. Accordingly, dangling bonds of the gate insulating film can be effectively terminated, and various characteristics of the MIS transistor can be improved.
[0034]
Next, a manufacturing method for realizing the structure of the second embodiment will be described. FIG. 4 is a process cross-sectional view showing a manufacturing method for realizing a third modification of the second embodiment.
First, an insulating film 20 is formed on a substrate as shown in FIG. The substrate is, for example, a semiconductor substrate 1, and the semiconductor is, for example, silicon. The insulating film 20 is made of, for example, SiO ₂ It is a membrane. This SiO ₂ A recess 30 is formed in the film. SiO ₂ The thickness of the film is about 150 nm, and the depth of the recess is about 50 nm. The shape of the recess is not particularly limited, but a typical example will be described with reference to FIG.
[0035]
FIG. 5 is a diagram for explaining the shape of the concave portion in FIG. As shown in FIG. 5A, the recess 30 is, for example, a rectangular groove 27. And the AA 'cross section is as shown in FIG. Alternatively, the groove 28 may be circular or elliptical as shown in FIG. The cross section taken along the line BB ′ is as shown in FIG. 5 (3) as in the example of FIG. 5 (1).
[0036]
Returning to FIG. 4, the explanation of FIG. The first barrier layer 21 is formed in the recess 30 described above. This barrier layer is a laminated film made of, for example, Ti and TiN. Subsequently, a material 22 having a catalytic action is formed. This material is, for example, a metal such as Ru, Pd, and Pt, but is not limited thereto.
[0037]
Next, as shown in FIG. 4C, a second barrier film 23 is formed. The second barrier layer 23 is, for example, a laminated film of TiN and Ti. An insulating film 24 is formed thereover. This insulating film is made of, for example, SiO ₂ It is a membrane.
[0038]
Next, as shown in FIG. 4D, an MIS transistor 26 is formed in the semiconductor layer 25. The semiconductor layer is, for example, silicon. The semiconductor layer 25 can be formed by a method in which a thin single-crystal silicon substrate and the semiconductor substrate 1 are attached to each other with the insulating film 24 interposed therebetween. The semiconductor layer 25 may be formed by a method other than bonding the substrates. The MIS transistor is formed by a known manufacturing method. After that, the semiconductor device immediately before assembly is subjected to a heat treatment in an atmosphere containing hydrogen through a known multilayer wiring manufacturing process. The temperature of this heat treatment is 400 ° C. or less.
[0039]
According to the above-described manufacturing method, hydrogen molecules diffused in the semiconductor device by heat treatment in an atmosphere containing hydrogen come into contact with a material having a catalytic action and are converted into hydrogen atoms. Terminate the joining hand. Therefore, various characteristics of the transistor are improved.
[0040]
(Third embodiment)
FIG. 6 is a sectional view of a structure showing a third embodiment of the present invention and its modification. In FIG. 6A, a first barrier layer 41 is formed on a substrate 40, and a material 42 having a catalytic action is formed thereon. Further, a second barrier layer 43 is formed thereover. Here, the substrate 40 is, for example, a semiconductor substrate. The barrier layers 41 and 43 are laminated films of Ti and TiN. The material 42 having a catalytic action is, for example, a metal such as Ru, Pd, and Pt, but is not limited thereto.
[0041]
An insulating film 44 is formed on the above structure. Further, a semiconductor layer 45 is formed thereover, and a MIS transistor 46 is formed there. Here, the insulating film 44 is, for example, SiO 2 ₂ It is a membrane. This SiO ₂ The film prevents the diffusion of metal from the second barrier layer 43. Further, the MIS transistor is formed by a known method.
[0042]
FIG. 6B is a modification of the third embodiment. The difference from FIG. 6A is that the insulating film 44 is not formed. Therefore, the distance from the catalytic material to the MIS transistor becomes shorter by the thickness of the insulating film 44.
[0043]
When the above-described semiconductor device having the structure shown in FIGS. 6A and 6B is subjected to a heat treatment at 400 ° C. or less in an atmosphere containing hydrogen, hydrogen molecules diffuse in the semiconductor device and a material having a catalytic action is obtained. Contact The contacted hydrogen molecules are converted into hydrogen atoms and supplied to the upper MIS transistor. Then, the hydrogen atoms terminate dangling bonds in the gate insulating film of the MIS transistor. Therefore, various characteristics of the MIS transistor can be improved.
[0044]
In order to obtain the above structure, for example, the first barrier layer 41 is formed on the substrate 40, and subsequently, a material having a catalytic action is formed. Then, a second barrier layer 43 is formed, and an insulating film 44 is formed thereover. Further, it can be obtained by forming a semiconductor layer 45 thereon and forming a MIS transistor by a known method.
[0045]
(Fourth embodiment)
FIG. 7 is a sectional view showing the structure of the fourth embodiment and a modification of the present invention. In FIG. 7A, a hydrogen-containing film 51 is formed on a substrate 50. The substrate is not particularly limited, but is, for example, a dielectric substrate. The hydrogen-containing film 51 is a SiN film (silicon nitride film) or an α-Si film (amorphous silicon film). The former can be formed as a SiN film containing about 25% of hydrogen by, for example, a plasma CVD method using SiH4 (silane) and NH3 (ammonia) as material gases. In the latter case, SiH4 (silane) and Ar (argon) can be formed as an α-Si film by a plasma CVD method at a flow rate ratio of both of them of 10: 1. It is preferable that both the SiN film and the α-Si film have a thickness of 1000 nm or more in order to supply sufficient hydrogen to the MIS transistor.
[0046]
In FIG. 7A, an insulating film 52 is formed on the hydrogen-containing film 51. A semiconductor layer 53 is formed thereon. An MIS transistor is formed on the semiconductor layer 53 by a known method.
[0047]
In FIG. 7B, the insulating film 52 is not formed. Others are the same as FIG. 7 (1). Here, since the insulating film 52 is not formed, the distance between the hydrogen-containing film 51 and the MIS transistor 54 is shorter than the structure of FIG. 7A by the thickness of the insulating film 52. Therefore, the hydrogen diffusion distance can be shorter than that of the structure shown in FIG.
[0048]
The semiconductor device having the structure shown in FIGS. 7A and 7B is subjected to a heat treatment at 400 ° C. or less. The atmosphere for this heat treatment may or may not contain hydrogen. Hydrogen diffuses from the hydrogen-containing film 51 during the heat treatment, and a sufficient amount of hydrogen is supplied to the MIS transistor formed in the upper layer, thereby terminating the dangling bonds of the gate insulating film. Therefore, various characteristics of the MIS transistor are improved.
[0049]
In order to obtain the above structure, for example, a hydrogen-containing film 51 is formed on a substrate 50, and an insulating film 52 is formed thereon. Further, it can be obtained by forming a semiconductor layer 53 thereon and forming a MIS transistor 54 by a known method.
[0050]
Further, the present embodiment is more effective when used in combination with the first embodiment of the present invention. Although not shown, an insulating film is formed on the MIS transistor shown in FIGS. 7A and 7B to open a contact hole, and the conductive material having a catalytic action is different from the conductive material. The contact hole is buried with a conductive material. Thereafter, when heat treatment is performed at a temperature of 400 ° C. or less, hydrogen molecules diffused from the hydrogen-containing film 51 come into contact with a conductive material having a catalytic action and are converted into hydrogen atoms. The hydrogen atoms diffuse again and are supplied to the gate insulating film of the MIS transistor, and the dangling bonds are effectively terminated. Therefore, the characteristics of the MIS transistor are improved.
[0051]
As described above, the embodiments are summarized as follows.
[0052]
(Supplementary Note 1) In a semiconductor device having a MIS transistor,
A MIS transistor formed on a semiconductor substrate;
An insulating film formed on the MIS transistor;
A contact hole formed in the insulating film for a gate electrode or a source / drain region of the MIS transistor;
A semiconductor device, wherein a conductive material having a catalytic action of converting a molecule into an atom and a conductive material different from the material are formed in the contact hole.
[0053]
(Supplementary Note 2) In Supplementary Note 1,
A semiconductor device, wherein the semiconductor substrate is silicon.
[0054]
(Supplementary Note 3) In Supplementary note 1 or 2,
A semiconductor device, wherein the insulating film is a silicon oxide film.
[0055]
(Supplementary Note 4) In Supplementary Note 1 or 2
A semiconductor device, wherein the insulating film is a silicon nitride film.
[0056]
(Supplementary Note 5) In Supplementary Note 1,
The semiconductor device, wherein the conductive material having a catalytic action is any of Ru, Pd, and Pt.
[0057]
(Supplementary Note 6) A method for manufacturing a semiconductor device having a MIS transistor,
Forming a MIS transistor on a semiconductor substrate;
Forming an insulating film on the MIS transistor;
Forming a contact hole for a gate electrode or a source / drain region in the insulating film;
A step of filling the contact hole with a conductive material having a catalytic action and a conductive material different from the material;
Heat-treating the semiconductor substrate in an atmosphere containing hydrogen.
[0058]
(Supplementary Note 7) In Supplementary note 6,
A method for manufacturing a semiconductor device, wherein the temperature of the heat treatment is 400 ° C. or less.
[0059]
(Supplementary Note 8) In the semiconductor device having the MIS transistor,
An insulating film formed on the substrate and embedded with a catalytic material that converts molecules into atoms,
And a MIS transistor formed on the insulating film.
[0060]
(Supplementary Note 9) In Supplementary note 8,
A semiconductor device, wherein the material having a catalytic action is any of Ru, Pd, and Pt.
[0061]
(Supplementary Note 10) A method of manufacturing a semiconductor device having a MIS transistor,
Forming an insulating film on the substrate;
Forming a groove in the insulating film;
Embedding the groove with a material having a catalytic action and another material different from the material,
Forming a MIS transistor on the insulating film;
Subjecting the substrate to a heat treatment in an atmosphere containing hydrogen.
[0062]
(Supplementary Note 11) In Supplementary note 10,
A method for manufacturing a semiconductor device, wherein the temperature of the heat treatment is 400 ° C. or less.
[0063]
(Supplementary Note 12) In a semiconductor device having a MIS transistor,
A material layer having a catalytic action to convert molecules formed on the substrate into atoms,
And a MIS transistor formed on the material layer.
[0064]
(Supplementary Note 13) In Supplementary Note 12,
A semiconductor device, wherein the material having a catalytic action is any of Ru, Pd, and Pt.
[0065]
(Supplementary Note 14) A method of manufacturing a semiconductor device having an MIS transistor,
Forming a catalytically active material on the substrate;
Forming a MIS transistor in an upper layer of the material;
Heat-treating the substrate in an atmosphere containing hydrogen.
[0066]
(Supplementary Note 15) In Supplementary note 14,
A method for manufacturing a semiconductor device, wherein the temperature of the heat treatment is 400 ° C. or less.
[0067]
(Supplementary Note 16) In the semiconductor device having the MIS transistor,
A hydrogen-containing film containing hydrogen formed on the substrate,
And a MIS transistor formed on the hydrogen-containing film.
[0068]
(Supplementary Note 17) In Supplementary Note 16,
A semiconductor device, wherein the film containing hydrogen is a SiN film or an α-Si film.
[0069]
(Supplementary Note 18) In Supplementary Note 16,
Further, an insulating film formed on the MIS transistor,
A contact hole formed in the insulating film for a gate electrode or a source / drain region of the MIS transistor;
A semiconductor device, wherein a conductive material having a catalytic action of converting a molecule into an atom and a conductive material different from the material are formed in the contact hole.
[0070]
(Supplementary Note 19) A method of manufacturing a semiconductor device having a MIS transistor,
Forming a film containing hydrogen on the substrate,
Forming a MIS transistor on the film;
Heat treating the substrate.
[0071]
(Supplementary Note 20) In Supplementary note 19,
Forming an insulating film on the MIS transistor;
Forming a contact hole for a gate electrode or a source / drain region in the insulating film;
A step of filling the contact hole with a conductive material having a catalytic effect of converting molecules into atoms, and a conductive material different from the material;
Heat treating the semiconductor substrate.
[0072]
【The invention's effect】
As described above, according to the present invention, in a semiconductor device having an MIS transistor, highly reactive hydrogen atoms can be supplied to the gate insulating film only by performing heat treatment at a low temperature of 400 ° C. or less in an atmosphere containing hydrogen. Even if the amount of hydrogen atoms is small, dangling bonds of the gate insulating film can be effectively terminated. Therefore, the characteristics of the MIS transistor can be improved even in a semiconductor device having ten or more wiring layers above the transistor.
[0073]
In the semiconductor device having the MIS transistor, a film containing sufficient hydrogen is provided below the transistor, so that dangling bonds of the gate insulating film are terminated without depending on diffusion of hydrogen from the outside. Is supplied from the lower side of the transistor. Therefore, the characteristics of the MIS transistor can be improved.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view illustrating a structure according to a first embodiment of the present invention.
FIG. 2 is a process sectional view illustrating the manufacturing method according to the first embodiment of the present invention.
FIG. 3 is a cross-sectional view illustrating a structure according to a second embodiment of the present invention and a modification thereof.
FIG. 4 is a process sectional view illustrating a manufacturing method for realizing a third modification of the second embodiment.
FIG. 5 is a view for explaining the shape of a concave portion in FIG. 4 (1).
FIG. 6 is a sectional view of a structure showing a third embodiment of the present invention and a modification thereof.
FIG. 7 is a sectional view showing the structure of a fourth embodiment and a modification of the present invention.
[Explanation of symbols]
1 semiconductor substrate
2 Gate insulating film
3 Gate electrode
4 Source area
5 Drain region
6 silicide
10 Barrier layer
11 Catalytic conductive material
22,42 Catalytic materials
12 Embedded metal
21, 41 First barrier layer
23, 43 Second barrier layer
26, 46, 54 MIS type transistors
30 recess

Claims (10)

In a semiconductor device having a MIS transistor,
A MIS transistor formed on a semiconductor substrate;
An insulating film formed on the MIS transistor;
A contact hole formed in the insulating film for a gate electrode or a source / drain region of the MIS transistor;
A semiconductor device, wherein a conductive material having a catalytic action of converting a molecule into an atom and a conductive material different from the material are formed in the contact hole. A method for manufacturing a semiconductor device having a MIS transistor,
Forming a MIS transistor on a semiconductor substrate;
Forming an insulating film on the MIS transistor;
Forming a contact hole for a gate electrode or a source / drain region in the insulating film;
A step of filling the contact hole with a conductive material having a catalytic effect of converting molecules into atoms, and a conductive material different from the material;
Heat-treating the semiconductor substrate in an atmosphere containing hydrogen. In a semiconductor device having a MIS transistor,
An insulating film formed on the substrate and embedded with a catalytic material that converts molecules into atoms,
And a MIS transistor formed on the insulating film. A method for manufacturing a semiconductor device having a MIS transistor,
Forming an insulating film on the substrate;
Forming a groove in the insulating film;
Filling the grooves with a catalytic material that converts molecules into atoms;
Forming a MIS transistor on the insulating film;
Subjecting the substrate to a heat treatment in an atmosphere containing hydrogen. In a semiconductor device having a MIS transistor,
A material layer having a catalytic action to convert molecules formed on the substrate into atoms,
And a MIS transistor formed on the material layer. A method for manufacturing a semiconductor device having a MIS transistor,
Forming a catalytic material layer that converts molecules into atoms on the substrate,
Forming a MIS transistor on the material layer;
Heat-treating the substrate in an atmosphere containing hydrogen. In a semiconductor device having a MIS transistor,
A hydrogen-containing film containing hydrogen formed on the substrate,
And a MIS transistor formed on the hydrogen-containing film. In claim 7,
Further, an insulating film formed on the MIS transistor,
A contact hole formed in the insulating film for a gate electrode or a source / drain region of the MIS transistor;
A semiconductor device, wherein a conductive material having a catalytic action of converting a molecule into an atom and a conductive material different from the material are formed in the contact hole. A method for manufacturing a semiconductor device having a MIS transistor,
A step of forming a hydrogen-containing film containing hydrogen on the substrate,
Forming a MIS transistor on the hydrogen-containing film;
Heat treating the substrate. In claim 9,
Forming an insulating film on the MIS transistor;
Forming a contact hole for a gate electrode or a source / drain region in the insulating film;
A step of filling the contact hole with a conductive material having a catalytic effect of converting molecules into atoms, and a conductive material different from the material;
Heat treating the semiconductor substrate.

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