JP2004158628A - Wafer treatment device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wafer treatment device where a use amount of process gas can be reduced while the adhesion of a contaminant into a wafer and a treatment chamber is prevented when the wafer is dried by using process gas. <P>SOLUTION: In dry treatment in which plasma gas is discharged to the wafer W from a discharge nozzle 20 and organic materials stuck to the wafer W are removed while the wafer W is moved by a transfer roller 15, process gas is changed into plasma by two electrodes 60 and it is discharged to the wafer W when the removal is performed. When the removal is not performed, inexpensive dry air is discharged from the discharge nozzle 20, and an atmosphere in the treatment chamber 10 is exhausted by an exhaust pump 41. Thus, a contaminant is prevented from sticking to an internal part of the treatment chamber 10 and to the electrodes 60. Since process gas and dry air can selectively be discharged, the consumption of process gas is reduced and the adhesion of the contaminant can be prevented. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention provides a substrate processing for performing dry processing using a process gas on a semiconductor substrate, a glass substrate for a liquid crystal display device, a glass substrate for a photomask, a substrate for an optical disk (hereinafter, referred to as a “substrate”). The present invention relates to an apparatus, and more particularly to an improvement for reducing the amount of process gas used while preventing contaminants from adhering to a substrate or a processing chamber.
[0002]
[Prior art]
For products such as semiconductors and liquid crystal displays, a substrate is subjected to a wet treatment with hydrofluoric acid, pure water or the like (hereinafter, also referred to as a “treatment solution”), a plasma gas of nitrogen gas, an ozone gas (hereinafter, “treatment gas”). ). Among these substrate processes, as a dry process using a processing gas, a process gas that is turned into plasma (hereinafter, collectively referred to as "plasma gas") is supplied to a substrate to remove organic substances attached to the substrate. Is known.
[0003]
FIG. 8 is a front view of a conventional substrate processing apparatus 500 that discharges a plasma gas onto a substrate W to remove organic substances (eg, resist residues) attached to the substrate W. The discharge nozzle 520 disposed in the processing chamber 510 of the substrate processing apparatus 500 discharges a process gas (for example, an inert gas such as a nitrogen gas, a helium gas, or an argon gas) supplied from the process gas supply source 521 to the discharge nozzle. The nozzle is a nozzle that supplies a plasma to the substrate W by generating a plasma by applying a potential difference to two electrodes 560 provided in the inside of the substrate 520.
[0004]
In the substrate processing apparatus 500, the organic substances attached to the substrate W are removed by the following procedure. First, (1) the valve 522 is opened and the process gas supplied from the process gas supply source 521 to the discharge nozzle 520 is turned into plasma by the electrode 560. Subsequently, (2) the process gas (plasma gas) that has been turned into plasma is supplied as a gas flow FL5 from the discharge nozzle 520 toward the substrate W, and the substrate W is transported substantially horizontally by the transport roller 515 in the processing chamber 510. By moving the substrate along the path (pass line) in the X-axis plus direction, the organic substances attached to the substrate W are removed. When the removal process is completed for the entire substrate W, (3) the valve 522 is closed, the discharge of the plasma gas from the discharge nozzle 520 is stopped, and the removal process is completed.
[0005]
However, in the above-described organic substance removal processing, contaminants such as particles contained in the atmosphere in the processing chamber 510 and reaction products generated by the removal processing are compared with the wet processing in which the substrate processing is performed using the processing liquid. In addition, since it easily adheres to the inner wall of the processing chamber 510, the members in the processing chamber 510, the substrate W, and the like, there is a problem that the processing capability of removing organic substances is reduced.
[0006]
In particular, a member that is easily charged such as an electrode 560 provided inside the discharge nozzle 520 easily absorbs contaminants, and performs a process of turning the process gas supplied from the process gas supply source 521 to the discharge nozzle 520 into plasma. It may not be able to perform well. In such a case, a sufficient plasma gas cannot be supplied from the discharge nozzle 520 to the substrate W, so that the ability to remove organic substances is reduced.
[0007]
In order to solve this problem, a method of constantly discharging a process gas from the discharge nozzle 520 to the atmosphere in the processing chamber 510 to prevent contaminants from adhering to the processing chamber 510 and the substrate W is proposed. Proposed.
[0008]
[Problems to be solved by the invention]
However, in this method, an expensive inert gas is used as a process gas to be converted into plasma. Therefore, if the process gas is constantly supplied to the processing chamber 510, the amount of the process gas used increases, and as a result, the substrate processing cost increases. There is a problem that increases.
[0009]
Such a problem is not limited to the process of removing an organic substance attached to a substrate using a plasma gas, but also occurs in other dry processes.
[0010]
Therefore, in the present invention, when dry processing is performed on a substrate using a process gas, the amount of the process gas used can be reduced while preventing the attachment of contaminants to the substrate and the inside of the processing chamber. It is an object of the present invention to provide a substrate processing apparatus that can perform the processing.
[0011]
[Means for Solving the Problems]
In order to solve the above problem, an invention according to claim 1 is a substrate processing apparatus, comprising: a processing chamber; a switching unit configured to switch between a process gas and dry air to supply the gas to a gas supply pipe; A discharge unit that is disposed and connected to the gas supply pipe and selectively discharges the process gas and the dry air into the processing chamber; and a discharge unit that is disposed in a gas flow path unit in the discharge unit. Activating means for activating a process gas, exhaust means for exhausting the atmosphere in the processing chamber to the outside, and moving means for relatively moving the substrate and the discharge means in the processing chamber. Features.
[0012]
The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein the substrate is disposed above the processing chamber, and cleans air supplied from outside the processing chamber into the processing chamber via a filter. And a supply means for supplying.
[0013]
A third aspect of the present invention is the substrate processing apparatus according to the first or second aspect, wherein the activating means converts the process gas into plasma.
[0014]
According to a fourth aspect of the present invention, in the substrate processing apparatus according to the first or second aspect, the activation unit ionizes the process gas.
[0015]
A fifth aspect of the present invention is the substrate processing apparatus according to any one of the first to fourth aspects, wherein the moving means moves the substrate.
[0016]
The invention according to claim 6 is the substrate processing apparatus according to any one of claims 1 to 5, wherein the process gas is a nitrogen gas.
[0017]
The invention according to claim 7 is a substrate processing apparatus that performs dry processing of a substrate on at least one of an upstream side and a downstream side of a wet processing apparatus, wherein the processing chamber is switched between process gas and dry air. Switching means for supplying a chamber, dry processing means disposed in the processing chamber, wherein a substrate is present in the processing chamber, and performing dry processing on the substrate using the process gas, and atmosphere in the processing chamber. Exhaust means for exhausting the substrate to the outside, and transport means for transporting the substrate along a predetermined pass line passing through the processing chamber.
[0018]
An eighth aspect of the present invention is the substrate processing apparatus according to the seventh aspect, wherein the dry processing means includes an ion generating unit for ionizing the process gas.
[0019]
According to a ninth aspect of the present invention, in the substrate processing apparatus according to the seventh aspect, the dry processing unit includes a plasma generation unit that converts the process gas into plasma.
[0020]
According to a tenth aspect of the present invention, in the substrate processing apparatus according to the ninth aspect, the plasma generating unit is arranged near the pass line.
[0021]
An eleventh aspect of the present invention is the substrate processing apparatus according to any one of the seventh to tenth aspects, wherein the cleaning air is disposed above the processing chamber and filters clean air supplied from outside the processing chamber. And a supply means for supplying the processing chamber with the supply means via the control unit.
[0022]
According to a twelfth aspect of the present invention, in the substrate processing apparatus according to the seventh aspect, the dry processing unit includes an ultraviolet radiating unit, and the substrate processing unit irradiates the substrate from the ultraviolet radiating unit in an atmosphere of the process gas. The method is characterized by irradiating ultraviolet rays toward.
[0023]
According to a thirteenth aspect of the present invention, in the substrate processing apparatus according to any one of the seventh to twelfth aspects, the process gas is a nitrogen gas.
[0024]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
[0025]
<1. First Embodiment>
<1-1. Configuration of Substrate Processing Apparatus in First Embodiment>
FIG. 1 is a diagram illustrating a positional relationship between a substrate processing apparatus 1 according to the first embodiment of the present invention and a substrate processing apparatus 800 that performs wet processing. Note that, in order to clarify the directional relationship between FIG. 1 and each of the subsequent drawings, an XYZ orthogonal coordinate system in which the Z-axis direction is a vertical direction and the XY plane is a horizontal plane is attached as necessary.
[0026]
As shown in FIG. 1, a substrate processing apparatus 1 according to the present embodiment supplies a process gas, which is activated by being plasmatized, to a rectangular substrate W as described later, thereby This is a dry processing apparatus for removing organic substances such as attached resist residues. Further, the substrate processing apparatus 800 is a wet processing apparatus that supplies a processing liquid such as pure water to the substrate W and performs cleaning.
[0027]
As shown in FIG. 1, the substrate processing apparatus 1 is disposed before and after a substrate processing apparatus 800 that performs wet processing. Then, while the substrate W is moved in the direction of the arrow AR1 along the transfer path (pass line) PL by the transfer roller 15, the substrate processing apparatus (dry processing apparatus) 1 and the substrate processing apparatus ( The substrate processing is performed in the order of the wet processing apparatus) 800 and the substrate processing apparatus (dry processing apparatus) 1 on the downstream side, and the processing of the substrate W proceeds.
[0028]
As described above, the substrate processing apparatus 1 is disposed on the upstream side and the downstream side of the substrate processing apparatus 800, but may be disposed only on the upstream side in accordance with the state of adhesion of the organic matter on the substrate W, Also, it may be arranged only on the downstream side. For example, when performing a cleaning process using pure water in the substrate processing apparatus 800, when contaminants such as particles adhered on the substrate W cannot be removed by the cleaning process due to the influence of hydrophobic organic substances adhered on the substrate W, The substrate processing apparatus 1 is arranged upstream of the substrate processing apparatus 800. In addition, when the plasma gas does not reach the organic matter attached to the substrate W and the removal processing cannot be performed because the contaminant is attached to the substrate W, the substrate processing apparatus 1 is disposed downstream of the substrate processing apparatus 800. .
[0029]
Next, a hardware configuration of the substrate processing apparatus 1 will be described. FIG. 2 is a front view schematically showing the substrate processing apparatus 1. FIG. 3 is a top view schematically showing the substrate processing apparatus 1. The substrate processing apparatus 1 according to the first embodiment discharges a process gas (plasma gas) that has been activated by being plasmatized from the discharge nozzle 20 to the substrate W while moving the rectangular substrate W, and the organic substance attached to the substrate W It is a device for removing contaminants such as. As shown in FIG. 2, the substrate processing apparatus 1 mainly includes a processing chamber 10, a discharge nozzle 20, and a transport roller 15.
[0030]
The processing chamber 10 is a housing that houses the discharge nozzle 20, the transport roller 15, and the like inside. As shown in FIG. 2, openings 12a and 12b are provided on side surfaces of the processing chamber 10 which intersects perpendicularly with the X axis. The substrate W is carried into the processing chamber 10 through the opening 12 a by the transport roller 15, and the substrate process is performed by the plasma gas while being moved by the transport roller 15. After the substrate processing is completed, the substrate is carried out of the processing chamber 10 through the opening 12b. As described above, the substrate processing is performed by supplying the plasma gas to the substrate W while the substrate W is transported and moved in the arrow AR1 direction along the substantially horizontal transport path PL by the transport roller 15.
[0031]
As shown in FIGS. 2 and 3, the transport roller 15 is configured by arranging a plurality of roller groups each including three rollers arranged in a direction perpendicular to the Y axis in the X axis direction. I have. Each roller is connected to a drive motor (not shown), and rotates around an axis parallel to the Y axis as a rotation axis. Therefore, the transport roller 15 can linearly move the substrate W placed thereon in the positive or negative direction of the Y axis.
[0032]
The sensor 16 is a non-contact sensor used to detect the position of the substrate W conveyed on the conveyance roller 15, and is disposed near the conveyance roller 15 immediately below the discharge nozzle 20. Each of the sensors 16a and 16b shifts from the "OFF" state to the "ON" state when the substrate W is transported immediately above it. Therefore, by examining the “ON” and “OFF” states of the two sensors 16 a and 16 b, the position of the substrate W below the discharge nozzle 20 (for example, the tip of the substrate W (E.g., whether the vehicle has entered a position immediately below).
[0033]
As shown in FIG. 2, an exhaust pump 41 is connected to a lower portion of the processing chamber 10 via a pipe 45b. Therefore, the atmosphere in the processing chamber 10 is exhausted by the exhaust pump 41 and exhausted to the exhaust drain 40 outside the substrate processing apparatus 1 via the pipe 45a.
[0034]
As shown in FIGS. 2 and 3, the discharge nozzle 20 is a nozzle fixedly provided above the transfer path PL of the substrate W inside the processing chamber 10, and includes a pipe 25 (25a to 25d), a filter 23, The process gas supply source 21 is communicated with the dry gas supply source 31 via the valve 22 and the dry air supply source 31 via the pipe 25 d, the pipe 35 (35 a to 35 c), the filter 33 and the valve 32. Therefore, by opening the valve 22 and closing the valve 32, the process gas from which particles are removed by the filter 23 is supplied to the discharge nozzle 20. By opening the valve 32 and closing the valve 22, dry air (dry air) from which particles are removed by the filter 33 is supplied to the discharge nozzle 20.
[0035]
As described above, by adjusting the open / close state of the valve 22 and the valve 32, the process gas and the dry air can be selectively supplied to the discharge nozzle 20. That is, when removing the organic matter attached to the substrate W, the process gas is supplied from the process gas supply source 21 to the discharge nozzle 20 by opening the valve 22 and closing the valve 32. On the other hand, when the organic matter removal processing is not performed, the dry air is supplied from the dry air supply source 31 to the discharge nozzle 20 by opening the valve 32 and closing the valve 22.
[0036]
Here, the process gas is a gas that is chemically stable in an environment in which the substrate processing is performed, and an inert gas such as a nitrogen gas, an argon gas, and a helium gas is used. However, considering the running cost of the substrate processing apparatus 1, it is preferable to use a nitrogen gas, which is cheaper than an argon gas or a helium gas, as the process gas.
[0037]
Further, as shown in FIG. 4A, electrodes 60 (60a, 60b) formed of two metal members are provided in the flow path tube 65 of the discharge nozzle 20. When the organic substance is removed, a potential difference V is applied between the electrode 60a and the electrode 60b, and the process gas is supplied from the process gas supply source 21 to the flow path pipe 65 of the discharge nozzle 20, so that the process gas is turned into plasma. As a result, a process gas (plasma gas) that has been turned into plasma is discharged from the discharge port 61 of the discharge nozzle 20 toward the substrate W, and a gas flow FL1 is formed (FIGS. 4A and 4B). . For this reason, the plasma gas is supplied to the substrate W, the organic matter attached to the substrate W is removed, and contaminants can be prevented from being attached to the substrate W by the gas flow FL1.
[0038]
On the other hand, when the organic substance removal processing is not performed, the potential difference V between the electrode 60a and the electrode 60b is set to “0”, and the discharge of the plasma gas is stopped by closing the valve 22 and the valve 32 is opened. The discharge of dry air starts. The atmosphere in the processing chamber 10 is exhausted by an exhaust pump 41. Therefore, dry air is discharged from the discharge port 61 of the discharge nozzle 20 to the lower part of the processing chamber 10 via the transfer path PL of the substrate W (see FIG. 2), and a gas flow FL1 is formed (FIG. 4A). (B)) It is possible to prevent contaminants from adhering in the processing chamber 10. The substrate processing apparatus 1 of the present embodiment uses dry air to prevent contaminants from adhering to the inside of the processing chamber 10. The cost of substrate processing can be reduced as compared with the processing apparatus 500.
[0039]
By the way, as described above, the two electrodes 60 are made of a metal member, and the electrodes 60 are charged even if the potential difference V is set to “0”. Therefore, if a gas such as a process gas or dry air is not supplied to the flow pipe 65, particles contained in the atmosphere in the processing chamber 10 and contaminants such as reaction products generated by the removal processing are adsorbed on the surface of the electrode 60. As a result, when the potential difference V is again applied to the two electrodes 60 to convert the process gas into plasma, the plasma conversion efficiency decreases, and the organic matter removal rate decreases.
[0040]
However, in the substrate processing apparatus 1 according to the present embodiment, when the organic matter removal processing is not performed, the supply of the process gas is stopped by closing the valve 22 and opening the valve 32, and the flow from the dry air supply source 31 is stopped. Inexpensive dry air (dry air) can be supplied to the conduit 65. For this reason, it is possible to effectively prevent contaminants from adhering to charged members such as the electrodes 60, which are disposed in the processing chamber 10.
[0041]
The filter unit 11 is disposed above the processing chamber 10 and mainly includes a fan 11a and a filter 11b. By rotating a fan (not shown) of the fan unit 11a, the filter unit 11 removes the air taken in from the clean room in which the substrate processing apparatus 1 is disposed, and removes the air from the filter unit 11b disposed below the fan unit 11a. This is a unit for supplying the inside of the processing chamber 10 via the inside. Therefore, contaminants such as particles contained in the air are removed through the filter unit 11b, and purified air can be supplied into the processing chamber 10. In the present embodiment, the filter unit 11b is configured by a HEPA filter, but another filter may be used as long as contaminants such as particles can be removed.
[0042]
As described above, the purified air supplied from the upper part of the processing chamber 10 via the filter unit 11, the plasma gas and the dry air discharged from the discharge nozzle 20 are exhausted by the exhaust connected to the lower part of the processing chamber 10. Since the air is discharged to the exhaust drain 40 by the pump 41, a clean downward airflow FL2 is formed in the atmosphere inside the processing chamber 10. As a result, it is possible to further prevent contaminants from adhering to the substrate W and the inside of the processing chamber 10.
[0043]
As shown in FIG. 2, the control unit 50 includes a memory 52 for storing programs, variables, and the like, and a CPU 51 for executing control in accordance with the programs stored in the memory 52. The CPU 51 performs, at a predetermined timing, control of movement of the substrate W by the transport roller 15, control of opening and closing of each valve, control of the potential difference of the electrode 60, control of exhaust of the exhaust pump 41, and the like, according to a program stored in the memory 52.
[0044]
<1-2. Substrate processing sequence>
Here, a sequence for removing organic substances attached to the substrate W using the substrate processing apparatus 1 of the present embodiment will be described. FIG. 5 is a time chart for explaining the substrate processing in the present embodiment. During the following removal processing sequence, air that has been cleaned by the filter unit 11 is always supplied into the processing chamber 10, and the atmosphere in the processing chamber 10 is exhausted by the exhaust pump 41. Therefore, a clean air flow is always formed in the processing chamber 10. Further, since each roller of the transport roller 15 continues to rotate, the substrate W continues to move in the direction of the arrow AR1.
[0045]
At a stage where the front end of the substrate W has not reached the vicinity immediately below the discharge nozzle 20 (before time t0), the sensors 16a and 16b are both in the "OFF" state. In addition, since the valve 22 is closed and the valve 32 is opened, dry air is discharged from the discharge nozzle 20 to prevent a contaminant from adhering to the electrode 60 in the discharge nozzle 20.
[0046]
At time t0 when the tip of the substrate W reaches the vicinity immediately below the discharge nozzle 20 and the sensor 16a transitions from “OFF” to “ON”, the valve 32 is closed and the dry air supply source 31 moves to the discharge nozzle 20 from the dry air supply source 31. Is stopped, and the valve 22 is opened to supply the process gas from the process gas supply source 21 to the discharge nozzle 20. At time t0, a potential difference is applied between the electrode 60a and the electrode 60b in the ejection nozzle 20. Therefore, the process gas supplied to the discharge nozzle 20 is turned into plasma, and the plasma gas is discharged downward from the discharge nozzle 20. Then, at a time t1 when the leading end of the substrate W reaches just below the discharge nozzle 20 by the transport roller 15, the substrate processing is started.
[0047]
Subsequently, at time t2, even if the leading end of the substrate W reaches the sensor 16b and the sensor 16b transitions from the “OFF” state to the “ON” state, at time t3, the rear end of the substrate W Even if the sensor 16a reaches the sensor 16a and changes from the "ON" state to the "OFF" state, the plasma gas is continuously discharged from the discharge nozzle 20 to the substrate W, so that the removal processing is continued.
[0048]
At time t4, the rear end of the substrate W moves away from immediately below the discharge nozzle 20, and at time t5 when the sensor 16b transitions from the "ON" state to the "OFF" state, the valve 22 is closed and the two electrodes are turned off. When the potential difference between 60 changes from V0 to “0”, the discharge of the plasma gas from the discharge nozzle 20 is stopped, and the removal process ends. Further, at time t5, the valve 32 is opened and the dry air is discharged again from the discharge nozzle 20, so that the contaminant adheres to the inside of the processing chamber 10, particularly to the charged electrode 60 in the discharge nozzle 20. Can be prevented.
[0049]
Thereafter, the substrate W is carried out of the processing chamber 10 from the opening 12b by the carrying roller 15, and is carried to the substrate processing apparatus 800. Then, the cleaning process is continuously performed on the substrate W.
[0050]
<1-3. Advantages of Substrate Processing Apparatus of First Embodiment>
In the substrate processing apparatus 1 of the first embodiment described above, when performing the organic substance removal processing, (1) a potential difference is applied between the two electrodes 60, the valve 32 is closed, and the valve 22 is opened. By supplying the process gas from the process gas supply source 21 to the discharge nozzle 20, the process gas is turned into plasma by the electrode 60 disposed in the discharge nozzle 20, and the plasma gas is discharged from the discharge nozzle 20 to the substrate W. The contaminant can be prevented from adhering to the substrate W by the plasma gas flow FL1. When the organic matter removal process is not performed, (2) the potential difference V between the two electrodes 60 is set to “0”, the valve 22 is closed, the valve 32 is opened, and the dry air supply source 31 By supplying dry air to the discharge nozzle 20, it is possible to prevent contaminants from adhering to the inside of the processing chamber 10 and the charged electrode 60.
[0051]
As described above, since the substrate processing apparatus 1 of the first embodiment can selectively supply the process gas and the dry air to the discharge nozzle 20, the substrate processing apparatus 1 is inexpensive during the period in which the organic substance removal processing is not performed. By supplying dry air to the discharge nozzle 20, it is possible to prevent contaminants from adhering to the inside of the processing chamber 10 and the electrodes 60 without increasing the cost of substrate processing as compared with a conventional substrate processing apparatus. .
[0052]
In addition, air taken in from the clean room where the substrate processing apparatus 1 is disposed is supplied to the atmosphere in the processing chamber 10 via the filter unit 11b of the filter unit 11 configured by, for example, a HEPA filter. Then, the atmosphere in the processing chamber 10 is exhausted to the exhaust drain 40 by the exhaust pump 41. Therefore, it is possible to prevent contaminants such as particles from adhering to the inside of the processing chamber 10 and the substrate W.
[0053]
<2. Second Embodiment>
Next, a second embodiment will be described. The hardware configuration of the substrate processing apparatus 100 according to the second embodiment is different from that of the first embodiment as described below.
(1) the arrangement positions of the electrodes 160 are different;
(2) the form of the discharge nozzle 120 is different;
Except for, the configuration is the same as that of the first embodiment. Therefore, the following description focuses on this difference. In the following description, the same components as those in the substrate processing apparatus of the first embodiment are denoted by the same reference numerals. The components having the same reference numerals have already been described in the first embodiment, and a description thereof will be omitted in this embodiment.
[0054]
<2-1. Configuration of Substrate Processing Apparatus in Second Embodiment>
FIG. 6 is a front view schematically showing the substrate processing apparatus 100 according to the second embodiment of the present invention. FIG. 7 is a side view schematically illustrating the substrate processing apparatus 100 according to the second embodiment. The substrate processing apparatus 100 according to the present embodiment supplies a process gas between the substrate W and the electrode 160a as described later, and then uses the two electrodes 160 disposed near the substrate W to generate a process gas near the substrate W. This is a dry processing apparatus that converts the process gas into a plasma and removes organic substances such as a resist residue attached to the substrate W with a process gas (plasma gas) activated by the plasma.
[0055]
Further, the substrate processing apparatus 100 is arranged on the upstream side and the downstream side of the substrate processing apparatus 800 with respect to the transport direction AR1 of the substrate W, respectively, as in the substrate processing apparatus 1 of the first embodiment (FIG. Depending on the state of adhesion of organic substances on the substrate W, the substrate W may be disposed only on the upstream side of the substrate processing apparatus for performing wet processing, or may be disposed only on the downstream side of the substrate processing apparatus for performing wet processing. Is also good.
[0056]
As shown in FIGS. 6 and 7, two discharge nozzles 120 are hollow tubular members extending along the X direction, and two discharge nozzles 120 are provided above the transfer path (pass line) PL of the substrate W in the processing chamber 10. Have been. As shown in FIG. 6, the two discharge nozzles 120 are connected to the process gas supply source 21 via a pipe 125 (125a to 125c), a pipe 25 (25a to 25c), a filter 23 and a valve 22, and The dry air supply source 31 is connected to the dry air supply source 31 via a pipe 125 (125a to 125c), a pipe 35 (35a to 35c), a filter 33, and a valve 32.
[0057]
Therefore, by opening the valve 22 and closing the valve 32, the process gas from which particles are removed by the filter 23 is supplied to the two discharge nozzles 120, and the valve 32 is opened and the valve 22 is opened. By closing, dry air (dry air) from which particles are removed by the filter 33 is supplied to the discharge nozzle 120. As described above, by adjusting the open / close states of the valve 22 and the valve 32, the process gas and the dry air can be selectively switched and supplied to the discharge nozzle 120. As the process gas used in this embodiment, it is preferable to use a nitrogen gas which is advantageous in terms of the running cost of the substrate processing, as in the case of the first embodiment.
[0058]
Further, the discharge nozzle 120 is provided with a plurality of discharge ports 128, and is formed so that the discharge direction is obliquely downward. Therefore, when removing the organic matter attached to the substrate W, the valve 32 is closed and the valve 22 is opened, so that the gas flow FL3 of the process gas is formed between the substrate W and the electrode 160a. In addition, when the substrate W is moved away from immediately below the electrode 160a by the transport roller 15 and the removal process is not performed, the valve 22 is closed and the valve 32 is opened, so that the gap between the electrode 160a and the electrode 160b is reduced. , A dry air gas flow FL3 is formed.
[0059]
Above and below the transport path PL of the substrate W in the processing chamber 10, electrodes 160 (160a, 160b) formed of a metal member are disposed, respectively. As shown in FIG. 6, the electrode 160a disposed above the transport path PL is disposed between the two discharge nozzles 120 so as to be substantially the same height as the discharge nozzle 120. Further, the electrode 160b disposed below the transport path PL is disposed in parallel with the electrode 160a. When the organic substance is removed, a process gas flow FL3 is formed between the electrode 160a and the substrate W from the discharge nozzle 120, and a potential difference V is applied between the electrode 160a and the electrode 160b. Since the process gas between the electrode 160a and the substrate W is turned into plasma, the plasma gas is supplied onto the substrate W. On the other hand, when the organic substance removal processing is not performed, the potential difference V between the electrode 160a and the electrode 160b is set to “0”, and the generation of the plasma gas is stopped.
[0060]
As described above, in the present embodiment, as in the first embodiment, when the organic matter removal processing is not performed, the valve 22 is closed to stop the supply of the process gas, and the valve 32 is opened to disconnect the electrode 160a. Inexpensive dry air (dry air) can be supplied to the electrode 160b. Therefore, it is possible to prevent contaminants from adsorbing to the electrodes 160a and 160b without increasing the cost of substrate processing.
[0061]
<2-2. Substrate processing sequence>
As described above, the hardware configuration of the substrate processing apparatus 100 of the present embodiment mainly includes (1) the arrangement position of the electrode 160 and (2) the form of the discharge nozzle 120 as compared with the first embodiment. Are different. Therefore, in the organic substance removal processing of the present embodiment, the removal processing is performed in the same sequence as in the first embodiment, except for the method of supplying the plasma gas and the dry air supplied to the substrate W. Therefore, here, the processing sequence corresponding to the time t0 (process gas supply start timing) and the time t5 (dry air supply start timing) in FIG. 5 will be described.
[0062]
In the process of removing the organic matter attached to the substrate W, when the sensor 16 detects that the tip of the substrate W has reached just above the sensor 16a, the valve 32 is closed and the space between the substrate W and the electrode 160a is removed. The supply of the dry air is stopped, the valve 22 is opened, the supply of the process gas between the substrate W and the electrode 160a is started, the potential difference V0 is applied to the two electrodes 160, and the process gas is (Corresponding to time t0 in FIG. 5). Subsequently, the substrate W is transported immediately below the electrode 160a, thereby starting the organic substance removal processing (corresponding to times t1 to t4 in FIG. 5).
[0063]
Subsequently, when the sensor 16 detects that the rear end of the substrate W has reached just above the sensor 16b, the valve 22 is closed, and the potential difference V between the two electrodes 160 transits from V0 to “0”. Then, the discharge of the process gas from the discharge nozzle 120 between the substrate W and the electrode 160a is stopped, and at the same time, the valve 32 is opened, and the dry air is again supplied between the substrate W and the electrode 160a from the discharge nozzle 120. It is discharged (corresponding to time t5 in FIG. 5). Therefore, it is possible to prevent contaminants from adhering to the electrode 160a.
[0064]
Thereafter, the substrate W is carried out of the processing chamber 10 from the opening 12b by the carrying roller 15, is carried to the substrate processing apparatus 800, and the substrate W is continuously subjected to the cleaning process.
[0065]
<2-3. Advantages of Substrate Processing Apparatus of Second Embodiment>
In the above-described substrate processing apparatus 100 of the second embodiment, when performing the organic substance removal processing, (1) a potential difference is applied between the two electrodes 160, and the potential difference between the substrate W and the electrode 160a from the discharge nozzle 120 is increased. By discharging the process gas to the substrate W, the process gas in the vicinity of the substrate W can be turned into plasma, and the plasma gas can be supplied to the substrate W. Can be prevented. When the organic matter removal processing is not performed, (2) the potential difference V between the two electrodes 160 is set to “0”, and dry air is supplied from the discharge nozzle 120 between the electrodes 160a and 160b. This can prevent contaminants from adhering to the substrate W and the charged electrode 160.
[0066]
As described above, since the substrate processing apparatus 100 of the second embodiment can selectively supply the process gas and the dry air, the substrate processing apparatus 100 can supply the inexpensive dry air during the period in which the organic matter removal processing is not performed. As in the substrate processing apparatus 1 of the first embodiment, it is possible to prevent contaminants from adhering to the inside of the processing chamber 10 and the electrodes 160 without increasing the cost of substrate processing as compared with the conventional substrate processing apparatus. it can.
[0067]
In the substrate processing apparatus 100 according to the second embodiment, the process gas is turned into plasma near the substrate W and the plasma gas is supplied to the substrate W. Therefore, compared with the substrate processing apparatus 1 of the first embodiment, the plasma gas can be supplied to the substrate W more efficiently, and the efficiency of the removal processing can be further improved.
[0068]
Further, as in the first embodiment, the air taken in from the clean room in which the substrate processing apparatus 100 is disposed is supplied into the processing chamber 10 via the filter unit 11b of the filter unit 11 configured by, for example, a HEPA filter. The atmosphere in the processing chamber 10 is exhausted to the exhaust drain 40 by the exhaust pump 41. Therefore, similarly to the first embodiment, it is possible to prevent contaminants such as particles from adhering to the inside of the processing chamber 10 and the substrate W.
[0069]
<3. Modification>
Although the present invention has been described above, the present invention is not limited to the above-described embodiment, and various modifications are possible.
[0070]
(1) In the first embodiment, the organic matter removal process proceeds by moving the substrate W along the transport path PL by the transport roller 15 while discharging the plasma gas from the discharge nozzle 20 fixed in the processing chamber 10. However, the present invention is not limited to this. For example, the removal process is performed by holding the substrate W in a processing chamber and scanning the discharge nozzle above the substrate W while discharging the plasma gas from the discharge nozzle. You may. That is, the movement between the substrate W and the discharge nozzle (discharge means) is relative, and any of them may be moved.
[0071]
(2) In the first embodiment, the removal processing of the organic substance is performed by discharging the plasma gas from the discharge nozzle 20 to the substrate W. However, the present invention is not limited to this substrate processing. The corona discharge may be performed using the electrode 60, and the process gas ionized by the discharge may be discharged from the discharge nozzle 20 toward the substrate W to perform a process of removing the charge on the surface of the substrate W.
[0072]
(3) In the second embodiment, two discharge nozzles 120 are provided above the transport path PL for the substrate W, but the present invention is not limited to this, and the discharge nozzles 120 are provided above the transport path PL for the substrate W. In addition to the two, they may be arranged below the transport path PL. As a result, the organic substance can be removed not only on the upper surface of the substrate W but also on the lower surface of the substrate W (that is, the surface on the electrode 160b side).
[0073]
(4) In the second embodiment, the two electrodes 160 are disposed above and below the transport path PL, and a process is performed to remove the organic matter by turning the process gas into a plasma by applying a potential difference between the two electrodes 160. But is not limited to this. For example, a corona discharge may be performed using the electrode 160, a process gas ionized by the discharge may be supplied to the substrate W, and a process of removing the surface of the substrate W may be performed. An ultraviolet irradiation unit may be provided in place of the electrode 160, and a process gas may be supplied to the vicinity of the substrate W to irradiate the surface of the substrate W with ultraviolet light, thereby performing a process of removing organic substances attached to the substrate W. Good.
[0074]
【The invention's effect】
According to the first to sixth aspects of the present invention, when the substrate exists below the discharge means, (1) the process gas is supplied to the gas supply pipe by the switching means and activated by the discharge means. By discharging the process gas onto the substrate, it is possible to prevent a contaminant from adhering to the substrate W while performing the substrate processing with the activated process gas. Further, when the substrate does not exist below the discharging means, (2) the switching means discharges the dry air from the discharging means into the processing chamber through the gas flow path in which the activating means is disposed, and the exhaust means. By exhausting the atmosphere inside the processing chamber to the outside of the processing chamber, it is possible to prevent contaminants from adhering to the activating means provided in the gas flow path by using inexpensive dry air instead of expensive process gas, and It is possible to prevent contaminants from adhering to the processing chamber due to the airflow of dry air formed in the chamber.
[0075]
As described above, according to the first to sixth aspects of the present invention, by using the switching means, the process gas and the dry air can be selectively discharged from the discharge means. The running cost of substrate processing can be reduced by reducing the amount of expensive process gas used while preventing contaminants from adhering to the activating means.
[0076]
In particular, according to the second aspect of the present invention, since the purified air can be supplied into the processing chamber, it is possible to further prevent contaminants from adhering to the substrate, the activation unit, and the processing chamber. it can.
[0077]
In particular, according to the third aspect of the present invention, since the process gas converted into plasma can be discharged from the discharge unit, it is possible to remove the deposit attached to the substrate.
[0078]
In particular, according to the fourth aspect of the present invention, since the ionized process gas can be discharged from the discharge means, the substrate can be discharged.
[0079]
In particular, according to the invention as set forth in claim 5, by moving the substrate, the discharge means can be fixed at a predetermined place in the processing chamber, and the discharge means can be realized with a relatively simple configuration. Therefore, the manufacturing cost of the substrate processing apparatus can be reduced, and the maintenance becomes easy.
[0080]
In particular, according to the invention described in claim 6, since inexpensive nitrogen gas is used as the process gas, the running cost of the substrate processing apparatus can be reduced.
[0081]
According to the seventh to thirteenth aspects, when a substrate is present in the processing chamber, (1) the process gas is supplied into the processing chamber by the switching means, and the substrate is dry-processed by the dry processing means. Can be performed, and the process gas reaching the substrate can be prevented from adhering contaminants to the substrate. When no substrate is present in the processing chamber, (2) dry air is supplied into the processing chamber by the switching means, and the atmosphere in the processing chamber is exhausted to the outside of the processing chamber by the exhaust means. In addition, it is possible to prevent contaminants from adhering to the dry processing means by using inexpensive dry air and to prevent contaminants from adhering to the processing chamber due to the airflow of dry air formed in the processing chamber.
[0082]
As described above, according to the seventh to thirteenth aspects of the present invention, by using the switching means, the process gas and the dry air can be selectively supplied to the processing chamber. The running cost of substrate processing can be reduced by reducing the amount of expensive process gas used while preventing contaminants from adhering to a room or dry processing means.
[0083]
In particular, according to the invention described in claim 8, since the process gas in the processing chamber can be ionized, the substrate can be neutralized by the ionized process gas.
[0084]
In particular, according to the ninth aspect of the present invention, since the process gas in the processing chamber can be turned into plasma, it is possible to remove deposits attached to the substrate by the process gas that has been turned into plasma.
[0085]
In particular, according to the tenth aspect of the present invention, since the plasma generating section is disposed near the pass line of the substrate, the process gas can be turned into plasma near the substrate, and Since it can be efficiently supplied to the substrate, it is possible to efficiently remove the deposits attached to the substrate.
[0086]
In particular, according to the eleventh aspect of the present invention, since purified air can be supplied into the processing chamber, it is possible to further prevent contaminants from adhering to the substrate, the activation unit, and the processing chamber. it can.
[0087]
In particular, according to the twelfth aspect of the present invention, since ultraviolet rays can be applied to the processing chamber and the substrate as a process gas atmosphere in the processing chamber, it is possible to remove deposits attached to the substrate.
[0088]
In particular, according to the invention of claim 13, since inexpensive nitrogen gas is used as the process gas, the running cost of the substrate processing apparatus can be reduced.
[Brief description of the drawings]
FIG. 1 is a diagram illustrating a positional relationship between a substrate processing apparatus 1 according to a first embodiment of the present invention and a substrate processing apparatus that performs wet processing.
FIG. 2 is a front view schematically showing the substrate processing apparatus according to the first embodiment of the present invention.
FIG. 3 is a top view schematically illustrating the substrate processing apparatus according to the first embodiment of the present invention.
FIG. 4 is a diagram illustrating a discharge nozzle according to the first embodiment of the present invention.
FIG. 5 is a time chart for explaining the substrate processing in the first embodiment of the present invention.
FIG. 6 is a front view schematically showing a substrate processing apparatus according to a second embodiment of the present invention.
FIG. 7 is a top view schematically illustrating a substrate processing apparatus according to a second embodiment of the present invention.
FIG. 8 is a front view schematically showing a conventional substrate processing apparatus.
[Explanation of symbols]
1,100 substrate processing equipment
10 Processing room
11 Filter unit
15 Transport rollers
20, 120 discharge nozzle
21 Process gas supply source
31 Dry air supply source
41 Exhaust pump
50 control unit
60, 160 electrodes
W substrate
FL1, FL3 gas flow
FL2 air flow

Claims (13)

A substrate processing apparatus,
(A) a processing chamber;
(B) switching means for switching between process gas and dry air and supplying the gas to a gas supply pipe;
(C) a discharge unit disposed in the processing chamber and connected to the gas supply pipe to selectively discharge the process gas and the dry air into the processing chamber;
(D) an activating unit disposed in a gas flow path unit in the discharge unit and activating the process gas;
(E) exhaust means for exhausting the atmosphere in the processing chamber to the outside;
(F) moving means for relatively moving the substrate and the discharge means in the processing chamber;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
A supply unit disposed at an upper part of the processing chamber and supplying cleaning air supplied from outside the processing chamber to the processing chamber through a filter;
A substrate processing apparatus, further comprising: The substrate processing apparatus according to claim 1 or 2, wherein:
The substrate processing apparatus, wherein the activating means converts the process gas into plasma. The substrate processing apparatus according to claim 1 or 2, wherein:
The said processing means ionizes the said process gas, The board | substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to any one of claims 1 to 4, wherein
The said processing means moves the said board | substrate, The board | substrate processing apparatus characterized by the above-mentioned. The substrate processing apparatus according to claim 1, wherein:
The substrate processing apparatus, wherein the process gas is a nitrogen gas. A substrate processing apparatus that performs dry processing of a substrate on at least one of an upstream side and a downstream side of a wet processing apparatus,
(A) a processing chamber;
(B) switching means for switching between process gas and dry air and supplying the same into the processing chamber;
(C) a dry processing unit disposed in the processing chamber, wherein a substrate is present in the processing chamber, and dry processing is performed on the substrate using the process gas;
(D) exhaust means for exhausting the atmosphere in the processing chamber to the outside;
(E) transport means for transporting the substrate along a predetermined pass line passing through the processing chamber;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 7,
The dry processing means,
(C-1) an ion generator for ionizing the process gas;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 7,
The dry processing means,
(C-2) a plasma generation unit for converting the process gas into plasma;
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 9, wherein
The substrate processing apparatus, wherein the plasma generation unit is arranged near the pass line. The substrate processing apparatus according to any one of claims 7 to 10, wherein
A supply unit disposed at an upper part of the processing chamber and supplying cleaning air supplied from outside the processing chamber to the processing chamber through a filter;
A substrate processing apparatus, further comprising: The substrate processing apparatus according to claim 7,
The dry processing means,
(C-3) an ultraviolet radiation section,
A substrate processing apparatus, comprising: irradiating the substrate with ultraviolet rays from the ultraviolet radiation section in an atmosphere of the process gas. The substrate processing apparatus according to any one of claims 7 to 12, wherein
The substrate processing apparatus, wherein the process gas is a nitrogen gas.

Images