JP2004138863A - Optical semiconductor device and its manufacturing method, and optical communication system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a compact and highly reliable optical semiconductor device capable of receiving wavelength division multiplexed signals without using a demultiplexer, its manufacturing method and an optical communication system. <P>SOLUTION: The optical semiconductor equipped with: an optical fiber 7 having at least two or more diffraction gratings 8-11 with different periods; and at least two or more photodetectors 13, is provided. The two or more photodetectors are capable of detecting radiation mode light emitted from the two or more diffraction gratings, respectively. The optical fiber can be buried in a substrate using surface migration of silicon. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to an optical semiconductor device, a method for manufacturing the same, and an optical communication system, and more particularly, to an optical semiconductor device suitable for use as a receiving device in a wavelength division multiplexing (WDM) optical communication system, a method for manufacturing the same, and a method for manufacturing the same. The present invention relates to an optical communication system.
[Prior art]
In the field of optical communication, a wavelength multiplexing method that allows a large number of wavelength channels to pass through one optical fiber and a Dense Wavelength Division Multiplexing (DWDM) method, which is a further evolution of the wavelength multiplexing method, have been developed. It contributes to the increase in the amount of information. For example, in the case of an optical subscriber system, the WDM system is being adopted in accordance with the increase in transmission capacity accompanying the distribution of moving images, audio data, and the like, and the number of multiplexed wavelengths is also 4, 8, or 16 waves. And increasing.
[0002]
FIG. 11 is a conceptual diagram illustrating a main part of a conventional wavelength division multiplexing optical communication system. As shown in the figure, optical signals of different wavelengths transmitted from a plurality of transmission modules 1 (TX1, TX2, TX3,...) Are multiplexed into one optical fiber 3 by a multiplexer 2. Sent and sent. The transmitted signal is demultiplexed into each wavelength by the demultiplexer 4 and received by the receiving module 5 (RX1, RX2, RX3,...).
[0003]
As described above, for example, Non-Patent Document 1 discloses a receiving module including a duplexer and a plurality of light receiving elements corresponding to the number of wavelength channels.
[0004]
[Non-patent document 1]
IEICE Technical Report EMD2000-41, CPM2000-56, OPE2000-53, LQE2000-47 (2000-08) pp. 1-6
[0005]
[Problems to be solved by the invention]
However, in such a wavelength-division multiplexed optical communication system, the number of transmission / reception modules corresponding to the number of wavelength multiplexing and the corresponding multiplexer / demultiplexer are indispensable devices, and as the number of multiplexing increases, the number of transmission / reception modules increases. And increase in the size of multiplexers / demultiplexers.
[0006]
The increase in the number of transmission / reception modules and the increase in the size of the multiplexer / demultiplexer are disadvantageous in that the communication system becomes complicated, the cost increases, and the installation area increases.
[0007]
The present invention has been made based on the recognition of such a problem, and an object of the present invention is to provide a compact and highly reliable optical semiconductor device capable of receiving a wavelength multiplexed signal without using a demultiplexer, a method of manufacturing the same, and an optical semiconductor device. A communication system is provided.
[0008]
[Means for Solving the Problems]
In order to achieve the above object, a first optical semiconductor device of the present invention includes: an optical fiber provided with at least two or more diffraction gratings having different periods from each other; and at least two or more light receiving elements.
Each of the two or more light receiving elements is capable of detecting radiation mode light emitted from each of the two or more diffraction gratings.
[0009]
According to the above configuration, a wavelength multiplexed optical signal can be received with a compact configuration.
[0010]
Further, the second optical semiconductor device of the present invention is provided with a silicon substrate, at least two diffraction gratings having different periods from each other, an optical fiber embedded in the silicon substrate, and provided on the silicon substrate. And at least two or more light receiving elements,
Each of the two or more light receiving elements is capable of detecting radiation mode light emitted from each of the two or more diffraction gratings through an opening provided in the silicon substrate.
[0011]
According to the above configuration, the wavelength multiplexed optical signal can be received with a compact configuration.
[0012]
Further, the third optical semiconductor device of the present invention is characterized in that a silicon substrate, an optical fiber provided with at least two or more diffraction gratings having different periods from each other, and fixed to one end of a cavity formed inside the silicon substrate. And at least two or more light receiving elements provided on the silicon substrate,
Each of the two or more light receiving elements can detect a radiation mode light emitted from each of the two or more diffraction gratings exposed in the cavity through an opening provided in the silicon substrate. It is characterized by the following.
[0013]
According to the above configuration, the wavelength multiplexed optical signal can be received with a compact configuration.
In the third optical semiconductor device, the lower surface and side surfaces of the optical fiber may be held in contact with the silicon substrate, and the upper surface may be exposed in the cavity.
[0014]
Further, the fourth optical semiconductor device of the present invention is characterized in that a silicon substrate and at least two or more diffraction gratings having different periods from each other are provided, and an optical fiber embedded with resin in a groove formed in the silicon substrate. And at least two or more light receiving elements provided on the resin,
Each of the two or more light receiving elements can detect radiation mode light emitted from each of the two or more diffraction gratings via the resin.
[0015]
According to the above configuration, the wavelength multiplexed optical signal can be received with a compact configuration.
[0016]
Further, the fifth optical semiconductor device of the present invention is characterized in that a silicon substrate, an optical fiber provided with at least two or more diffraction gratings having different periods from each other, and embedded in a resin in a groove formed in the silicon substrate. And at least two or more light receiving elements provided on the resin,
Each of the two or more light receiving elements can detect radiation mode light emitted from each of the two or more diffraction gratings through an opening provided in the resin.
[0017]
According to the above configuration, the wavelength multiplexed optical signal can be received with a compact configuration.
[0018]
In the first to fifth optical semiconductor devices, if each of the two or more diffraction gratings acts as a second-order diffraction grating with respect to light guided through the optical fiber, diffraction can be performed. The optical signal of each channel of the wavelength division multiplexing optical communication can be separated and extracted according to the period of the grating.
[0019]
On the other hand, the method for manufacturing an optical semiconductor device of the present invention includes a step of forming a groove in a silicon substrate, a step of providing at least two or more diffraction gratings having different periods from each other, and disposing an optical fiber in the groove. Heating the silicon substrate to flow silicon to cover the groove and bury the optical fiber inside the silicon substrate; and forming an opening in the silicon substrate to form each of the two or more diffraction gratings. The method includes the steps of: exposing; and providing a light receiving element such that radiation mode light emitted from each of the two or more diffraction gratings is detected through the opening.
[0020]
According to the above configuration, it is possible to manufacture an optical semiconductor device in which optical coupling is reliably ensured by embedding an optical fiber in a silicon substrate.
[0021]
In a second method of manufacturing an optical semiconductor device according to the present invention, a step of forming a groove in a silicon substrate and a step of providing at least two or more diffraction gratings having different periods from each other and disposing an optical fiber in the groove are provided. Heating the silicon substrate to flow the silicon to block the upper part of the groove, and leave the lower part of the groove as a cavity containing the light inside the silicon substrate, and an opening in the silicon substrate. Exposing each of the two or more diffraction gratings through the cavity; and detecting radiation mode light emitted from each of the two or more diffraction gratings through the opening and the cavity. And a step of providing a light receiving element to the light emitting element.
[0022]
In the second manufacturing method, the lower surface and the side surface of the optical fiber may be held in contact with the silicon substrate in the cavity, and the upper surface thereof may be exposed in the cavity.
[0023]
On the other hand, an optical communication system of the present invention comprises: an optical output device that multiplexes and outputs a plurality of optical signals having different wavelengths; an optical fiber that transmits an optical signal output from the optical output device; And an optical semiconductor device,
The optical semiconductor device receives each of the plurality of optical signals output from the optical output device and transmitted through the optical fiber as the radiation mode light.
[0024]
Here, each of the two or more diffraction gratings can act as a secondary diffraction grating for each of the plurality of optical signals.
[0025]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[0026]
FIG. 1 is a schematic diagram illustrating a main part of a semiconductor device according to an embodiment of the present invention. That is, FIG. 3A shows a portion accommodated in the package of the wavelength multiplexing optical communication receiving module, wherein FIG. 3A is a plan view and FIG. 3B is a cross-sectional view taken along line AA.
[0027]
An optical fiber 7 is embedded in a silicon (Si) platform 6 formed by processing a silicon substrate. In the optical fiber 7, a plurality of secondary gratings (diffraction gratings) 8 to 11 are formed. These secondary gratings separate the wavelength multiplexed optical signal into optical signals of respective wavelengths.
[0028]
That is, the wavelength multiplexed optical signal transmitted from the optical transmission module (not shown) is transmitted to the fiber 7. This wavelength multiplexed optical signal is obtained by multiplexing optical signals of different wavelengths. Each of these optical signals having different wavelengths is extracted from the fiber 7 in one of the secondary gratings. This utilizes the "radiation mode" forming action of the secondary grating.゜ FIG. 2 is a conceptual diagram for explaining a radiation mode in a secondary grating. That is, in the case where light is guided through a waveguide such as the optical fiber 7, if a secondary grating is provided in the waveguide, "radiation mode light" of a wavelength corresponding to the secondary grating is generated in the waveguide direction. Emitted in a substantially vertical direction.
[0029]
For example, if the period of the second-order grating is A and the effective refractive index of the waveguide is n _eff , the Bragg wavelength (λBragg) is expressed by the following equation.
NλBragg = 2n _eff A (1)
[0030]
Here, N represents “order of diffraction”. Then, N = 2, that is, a grating having a period A in which second-order diffraction occurs acts as a second-order diffraction grating.
[0031]
Therefore, in FIG. 1, each of the second-order gratings 8 to 11 satisfies the second-order Bragg diffraction condition with respect to the optical signal of each wavelength included in the wavelength multiplexed optical signal transmitted through the fiber 7. Have a unique cycle. In this way, the optical signals of the respective wavelengths constituting the wavelength-division multiplexed optical signal can be separated and extracted as radiation mode light.
[0032]
Although FIG. 1 shows an example in which four secondary gratings 8 to 11 are provided, the present invention is not limited to this, and the number of gratings depends on the number of multiplexed wavelength-multiplexed optical signals. Can be formed.
[0033]
As shown in FIG. 1, the radiation mode light emitted from each of the secondary gratings 8 to 11, that is, the optical signal of each demultiplexed channel is detected by the light receiving element 13 provided thereon. Is done. For this purpose, an opening 12 is provided in the silicon platform 6, and the light receiving element 13 is arranged above the opening 12. On the surface of the platform 6 around the opening 12, a cathode-side electrode pattern 14 for mounting the light receiving element 13 is formed.
[0034]
The light receiving element 13 may have a so-called “back-illuminated type” element structure or the like, and its light absorbing layer (light detecting layer) may be formed of a semiconductor having a band gap corresponding to the wavelength of an optical signal. Can be.
[0035]
A signal processing circuit (IC) 15 is installed near the light receiving element 13 and is directly connected to the light receiving element 13 by a bonding wire 16. The output of the IC 15 is connected to a signal line 17 formed on the surface of the silicon platform 6 and is taken out.
[0036]
As described above, according to the present embodiment, the wavelength division multiplexed optical signal can be demultiplexed by providing the secondary grating in the optical fiber and detected by the light receiving element. An optical communication receiving module can be provided. Since this receiving module does not require an independent duplexer, the number of components can be reduced, and the reliability of the system can be increased.
[0037]
Next, a method for manufacturing the optical semiconductor device of FIG. 1 will be described.
[0038]
FIG. 3 is a process diagram illustrating a main part of the method for manufacturing an optical semiconductor device of the present embodiment. That is, FIGS. 3 (a), (c), (e), and (g) correspond to the left side view in FIG. 1, and FIGS. 3 (b), (d), (f), and (h) This corresponds to the plan view in FIG.
[0039]
First, as shown in FIGS. 3A and 3B, a groove T is formed in a silicon substrate 6 serving as a silicon platform 6.
[0040]
Then, as shown in FIGS. 3C and 3D, the optical fiber 7 is accommodated in the groove T.
[0041]
Next, as shown in FIGS. 3E and 3F, the optical fiber 7 is embedded inside the silicon platform 6. Here, fluidization by “surface migration” of silicon can be used.
[0042]
FIG. 4 is a perspective perspective view conceptually showing a state in which the optical fiber 7 is buried by surface migration of silicon. That is, the silicon platform 6 is placed in a vacuum or a hydrogen atmosphere, and a heat treatment at about 1100 ° C. is performed. Then, the heat treatment causes surface diffusion of silicon atoms on the surface of the silicon platform 6, and this surface diffusion causes deformation in a direction to minimize the surface energy. Therefore, the surface diffusion of silicon becomes remarkable at the portion where the radius of curvature is shortest.
[0043]
When the groove T is formed, the radius of curvature at the corner of the bottom of the groove T and the corner of the upper opening of the groove T is the shortest. The surface diffusion of silicon occurs such that the radius of curvature of these portions increases. Since the optical fiber 7 is provided in the groove T, the surface migration of silicon atoms occurs to bury the optical fiber 7.
[0044]
As a result, the groove T is closed and the optical fiber 7 is buried in the silicon platform 6. Then, the surface of the platform 6 finally becomes flat.
[0045]
As a document disclosing such “surface migration” of silicon, for example, Non-Patent Document 2 can be cited.
[0046]
[Non-patent document 2]
Applied Physics Vol. 69, No. 10, (2000) pp. 1187-1191
[0047]
As a result of the study by the present inventor, the optical fiber 7 was heated at 1100 ° C. for several minutes to several tens of minutes in a vacuum or in a hydrogen atmosphere at a pressure of about 1000 Pascals, thereby converting the optical fiber 7 to the silicon platform 6. It turned out that it could be embedded inside.
[0048]
After the optical fiber 7 is buried in the platform 6 by the surface migration of silicon in this way, as shown in FIGS. 3 (g) and 3 (h), an opening 12 for extracting radiation mode light is formed. Form.
[0049]
That is, the openings 12 are formed by etching the silicon platform 6 corresponding to the positions where the secondary gratings 8 to 11 of the optical fiber 7 are formed.
[0050]
Thereafter, a wiring pattern is formed on the surface of the silicon platform 6, the light receiving element 13, the signal processing circuit 15, and the like are mounted, and these are connected by bonding wires, thereby obtaining the optical semiconductor device shown in FIG. The main part is completed.
[0051]
As described above, in the present embodiment, the optical fiber 7 can be embedded in the platform 6 by the surface migration of silicon. In this way, the optical fiber 7 is formed almost "monolithically" with respect to the platform, and problems such as "position shift" are solved. That is, it is possible to realize an optical semiconductor device that is extremely strong against mechanical or thermal vibration or impact.
[0052]
Next, a first modified example of the present invention will be described.
[0053]
FIG. 5 is a schematic view illustrating an optical semiconductor device of the present modification. That is, this figure is a cross-sectional view corresponding to FIG. In this figure, the same elements as those described above with reference to FIGS. 1 to 4 are denoted by the same reference numerals, and detailed description thereof will be omitted.
[0054]
Also in this modification, the optical fiber 7 is embedded in the platform 6, but a cavity V is formed above the optical fiber 7. That is, the optical fiber 7 is held in contact with the silicon platform 6 on the side surface and the bottom surface, but the upper surface of the optical fiber 7 does not contact the silicon platform 6 and is exposed in the cavity V. Have been.
[0055]
Such a structure can also be formed by surface migration of silicon.
[0056]
FIG. 6 is a process diagram illustrating a main part of a method for manufacturing an optical semiconductor device according to the present modification. That is, FIGS. 6A to 6D correspond to the side views shown in FIGS. 3A, 3C, 3E, and 3G, respectively.
[0057]
In this modification, the groove T is formed deeper than that illustrated in FIG. 1 or FIG. That is, the surface diffusion of silicon due to the heat treatment becomes remarkable at a portion where the radius of curvature is shortest. When the groove T is formed, the radius of curvature at the corner of the bottom of the groove T and the corner of the upper opening of the groove T is the shortest. The surface diffusion of silicon occurs such that the radius of curvature of these portions increases. When the groove T has a certain depth, surface diffusion near the lower portion and the upper opening of the groove occurs independently.
[0058]
As a result, the surface migration in the upper opening of the trench T becomes remarkable, and the opening of the trench T is closed to form an isolated cavity V.
[0059]
FIG. 7 is a schematic view showing a state in which an isolated cavity is formed by surface migration of silicon. That is, when the trench T is formed on the surface of the platform 6 and heated, the middle of the trench T gradually narrows due to the surface migration of silicon. Then, the bottom of the trench remains as an isolated cavity V, and the vicinity of the opening of the trench is finally flattened by the inflow of silicon from the periphery.
[0060]
Here, in order to form the isolated cavity V, it is desirable that the aspect ratio of the trench T is large to some extent. That is, when the depth of the trench T with respect to the opening width is large to some extent, an isolated cavity V is easily formed.
[0061]
According to this method, the lower surface and side surfaces of the optical fiber 7 can be firmly held in contact with the silicon platform 6.
[0062]
On the other hand, since the upper surface of the optical fiber 7 does not come into contact with the platform 6, the deterioration of the diffraction grating shape due to the coupling of the secondary gratings 8 to 11 with silicon at a high temperature can be suppressed. That is, when the optical fiber 7 is buried in the platform 6 so that the cavity V is formed, the diffraction grating shapes of the secondary gratings 8 to 11 are maintained in a good state, and strong radiation mode light is emitted with high diffraction efficiency. Obtainable. As a result, the demultiplexing efficiency for the wavelength multiplexed optical signal can be increased.
[0063]
At the same time, the lower and side surfaces of the optical fiber 7 are held in contact with the silicon platform 6. As a result, the optical fiber 7 is formed almost "monolithically" with respect to the platform, and problems such as "position shift" are eliminated. That is, it is possible to realize an optical semiconductor device that is extremely strong against mechanical or thermal vibration or impact.
[0064]
Next, a second modified example of the present invention will be described.
[0065]
FIG. 8 is a schematic diagram illustrating an optical semiconductor device according to a second modification of the present invention. That is, FIG. 3 also shows a portion housed inside the package of the wavelength multiplexing optical communication receiving module, (a) is a plan view thereof, (b) is a sectional view taken along line AA, and (c) is a left side thereof. It is a side view. Also in this figure, the same reference numerals are given to the same elements as those described above with reference to FIGS. 1 to 7, and the detailed description is omitted.
[0066]
In this modification as well, the optical fiber 7 is buried in the platform 6 but is not covered with silicon but is held by a resin 19 having light transmittance. That is, a groove 18 having a V-shaped cross section is formed in the platform 6, and the optical fiber 7 is accommodated in the groove 18 and fixed by the resin 19. The V-shaped groove 18 provided in the platform 6 can be formed by etching using, for example, a wet etchant having a dependency on the crystal plane orientation.
[0067]
In this deformability, the radiation mode light split by the secondary gratings 8 to 11 provided in the optical fiber 7 passes through the resin 19 and is detected by the light receiving elements 13 respectively.
[0068]
The resin 19 can be formed using various materials such as BCB, polyimide, epoxy, silicone, and the like. However, it is desirable that the material has transparency to radiation mode light that is split and emitted by the secondary gratings 8 to 11. Further, it is desirable that the optical fiber 7 has both mechanical strength and physical / chemical stability capable of fixing and holding the optical fiber 7 in the groove 18.
[0069]
According to this modification, since the optical fiber 7 is embedded in the platform 6 by the resin 19, it can be formed at a relatively low temperature. That is, there is an advantage that the optical fiber 7 and the gratings 8 to 11 formed on the surface thereof can be formed without being exposed to a high temperature.
[0070]
Next, a third modification of the present invention will be described.
[0071]
FIG. 9 is a schematic diagram illustrating an optical semiconductor device according to a third modification of the present invention. That is, FIG. 3 also shows a portion housed inside the package of the wavelength multiplexing optical communication receiving module, (a) is a plan view thereof, (b) is a sectional view taken along line AA, and (c) is a left side thereof. It is a side view. Also in this figure, the same elements as those described above with reference to FIGS. 1 to 8 are denoted by the same reference numerals, and detailed description is omitted.
[0072]
Also in this modified example, the optical fiber 7 is embedded in the platform 6 using the resin 19 as in the second modified example. However, in this modified example, the resin 19 is removed above the secondary gratings 8 to 11 to form the opening 12. That is, the radiation mode light split by the gratings 8 to 11 is directly incident on the light receiving element 13 without passing through the resin 19.
[0073]
As a result, absorption loss of the split light by the resin 19 can be prevented, and the detection efficiency can be increased. Furthermore, since it is not necessary to have light transmissivity as the material of the resin 19, it is possible to use a more suitable material in terms of mechanical strength and the like.
[0074]
As described above with reference to FIGS. 1 to 9, the optical semiconductor device of the present invention has compactness and high reliability, and is suitable for use as a receiving module of a wavelength division multiplexing optical communication system.
[0075]
FIG. 10 is a conceptual diagram illustrating a main part of a wavelength division multiplexing optical communication system using the receiving module of the present invention. As shown in FIG. 11, on the optical transmitting side, transmission modules 1 (TX1, TX2, TX3,...) Corresponding to the number of channels (the number of wavelengths) are provided, and the optical signals output from these are Multiplexed by the multiplexer 2 and transmitted through the optical fiber 3.
[0076]
The optical semiconductor device 100 of the present invention, that is, a receiving module is provided on the receiving side. This receiving module 100 includes an optical demultiplexer 4 in a conventional system as illustrated in FIG. 11 and a plurality of receiving modules 5 (RX1,
RX2, RX3,...).
[0077]
According to the present invention, as shown in FIG. 10, it is possible to receive a wavelength division multiplexed optical signal which is extremely compact and has a small number of parts as compared with the conventional one. Moreover, according to the present invention, the optical fiber and the light receiving element are firmly fixed to the platform 6, respectively, and problems such as "positional displacement" hardly occur, so that a highly reliable optical communication system can be provided. It becomes possible.
[0078]
The embodiment of the invention has been described with reference to the examples. However, the present invention is not limited to these specific examples.
[0079]
For example, the number of reception channels, that is, the number of secondary gratings 8 to 11 and the number of light receiving elements 13 in the semiconductor device of the present invention can be appropriately increased or decreased according to the number of channels of the wavelength division multiplexing optical communication system to be applied.
[0080]
Also, those skilled in the art can appropriately design the shape and size of the platform 6 and the type, number, shape, arrangement relationship, and the like of each component including the optical fiber, light receiving element, signal processing circuit, and the like disposed therein. Modifications are included in the scope of the present invention as long as they have the gist of the present invention.
【The invention's effect】
As described in detail above, according to the present invention, an optical fiber having a secondary grating formed therein is buried in a silicon platform, and radiation mode light from each grating is detected by a light receiving element. An optical semiconductor device which can be used as a receiving module for wavelength division multiplexing optical communication having a compact and simple structure can be provided.
[0081]
Since this optical semiconductor device does not require an independent duplexer, the number of components can be reduced, the reliability of the optical communication system can be increased, and industrial advantages are great.
[Brief description of the drawings]
FIG. 1 is a schematic diagram illustrating a main part of a semiconductor device according to an embodiment of the present invention.
FIG. 2 is a conceptual diagram for explaining a radiation mode in a secondary grating.
FIG. 3 is a process diagram illustrating a main part of a method for manufacturing an optical semiconductor device according to an embodiment of the present invention.
FIG. 4 is a perspective perspective view conceptually showing how the optical fiber 7 is buried by surface migration of silicon.
FIG. 5 is a schematic view illustrating an optical semiconductor device according to a first modification of the present invention.
FIG. 6 is a process diagram illustrating a main part of a method for manufacturing an optical semiconductor device according to a first modification of the present invention.
FIG. 7 is a schematic diagram showing a state where an isolated cavity is formed by surface migration of silicon.
FIG. 8 is a schematic diagram illustrating an optical semiconductor device according to a second modification of the present invention.
FIG. 9 is a schematic diagram illustrating an optical semiconductor device according to a third modification of the present invention.
FIG. 10 is a conceptual diagram showing a main part of a wavelength division multiplexing optical communication system using the receiving module of the present invention.
FIG. 11 is a conceptual diagram illustrating a main part of a conventional wavelength division multiplexing optical communication system.
[Explanation of symbols]
REFERENCE SIGNS LIST 1 transmission module 2 multiplexer 3 optical fiber 4 demultiplexer 5 reception module 6 silicon platform 7 optical fiber 8 to 11 grating 12 opening 13 light receiving element 14 cathode side electrode pattern 15 signal processing circuit (IC)
Reference Signs List 16 bonding wire 17 signal line 18 groove 19 resin 100 optical semiconductor device T groove V cavity

Claims (12)

An optical fiber provided with at least two diffraction gratings having different periods from each other;
At least two or more light receiving elements,
With
An optical semiconductor device, wherein each of the two or more light receiving elements is capable of detecting radiation mode light emitted from each of the two or more diffraction gratings. A silicon substrate,
At least two diffraction gratings having different periods from each other are provided, and an optical fiber embedded in the silicon substrate;
At least two or more light receiving elements provided on the silicon substrate,
With
An optical semiconductor, wherein each of the two or more light receiving elements can detect radiation mode light emitted from each of the two or more diffraction gratings through an opening provided in the silicon substrate. apparatus. A silicon substrate,
An optical fiber provided with at least two or more diffraction gratings having different periods from each other and fixed to one end of a cavity formed inside the silicon substrate;
At least two or more light receiving elements provided on the silicon substrate,
With
Each of the two or more light receiving elements can detect a radiation mode light emitted from each of the two or more diffraction gratings exposed in the cavity through an opening provided in the silicon substrate. An optical semiconductor device, comprising: 4. The optical semiconductor device according to claim 3, wherein the lower surface and the side surface of the optical fiber are held in contact with the silicon substrate, and the upper surface is exposed in the cavity. A silicon substrate,
At least two or more diffraction gratings having different periods from each other are provided, and an optical fiber embedded with a resin in a groove formed in the silicon substrate;
At least two or more light receiving elements provided on the resin,
With
An optical semiconductor device, wherein each of the two or more light receiving elements can detect radiation mode light emitted from each of the two or more diffraction gratings via the resin. A silicon substrate,
At least two or more diffraction gratings having different periods from each other are provided, and an optical fiber embedded with a resin in a groove formed in the silicon substrate;
At least two or more light receiving elements provided on the resin,
With
The optical semiconductor device, wherein each of the two or more light receiving elements is capable of detecting radiation mode light emitted from each of the two or more diffraction gratings through an opening provided in the resin. . The optical semiconductor according to any one of claims 1 to 6, wherein each of the two or more diffraction gratings acts as a secondary diffraction grating for light guided through the optical fiber. apparatus. Forming a groove in the silicon substrate;
Arranging an optical fiber in the groove, wherein at least two or more diffraction gratings having different periods from each other are provided;
A step of burying the optical fiber inside the silicon substrate by closing the groove by heating the silicon substrate and flowing silicon,
Forming an opening in the silicon substrate to expose each of the two or more diffraction gratings;
Providing a light receiving element so as to detect the radiation mode light emitted from each of the two or more diffraction gratings through the aperture;
A method for manufacturing an optical semiconductor device, comprising: Forming a groove in the silicon substrate;
Arranging an optical fiber in the groove, wherein at least two or more diffraction gratings having different periods from each other are provided;
Heating the silicon substrate to flow silicon to block the upper part of the groove, and leave the lower part of the groove as a cavity containing the light inside the silicon substrate,
Forming an opening in the silicon substrate and exposing each of the two or more diffraction gratings through the cavity;
Providing a light receiving element so as to detect the radiation mode light emitted from each of the two or more diffraction gratings through the opening and the cavity,
A method for manufacturing an optical semiconductor device, comprising: 10. The optical semiconductor device according to claim 9, wherein the lower surface and the side surface of the optical fiber are held in contact with the silicon substrate in the cavity, and the upper surface thereof is exposed in the cavity. Method. An optical output device for multiplexing and outputting a plurality of optical signals having different wavelengths,
An optical fiber for transmitting an optical signal output from the optical output device,
An optical semiconductor device according to any one of claims 1 to 7,
With
The optical communication system, wherein the optical semiconductor device receives each of the plurality of optical signals output from the optical output device and transmitted through the optical fiber as the radiation mode light. The optical communication system according to claim 11, wherein each of the two or more diffraction gratings acts as a secondary diffraction grating for each of the plurality of optical signals.

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