JP2004130509A - 連続可変変位型マイクロエレクトロメカニカルデバイス - Google Patents
連続可変変位型マイクロエレクトロメカニカルデバイス Download PDFInfo
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- JP2004130509A JP2004130509A JP2003331324A JP2003331324A JP2004130509A JP 2004130509 A JP2004130509 A JP 2004130509A JP 2003331324 A JP2003331324 A JP 2003331324A JP 2003331324 A JP2003331324 A JP 2003331324A JP 2004130509 A JP2004130509 A JP 2004130509A
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- 238000006073 displacement reaction Methods 0.000 claims abstract description 64
- 239000007788 liquid Substances 0.000 claims abstract description 61
- 239000007787 solid Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 2
- 230000003068 static effect Effects 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 36
- 239000000758 substrate Substances 0.000 description 13
- 239000004020 conductor Substances 0.000 description 12
- 239000007789 gas Substances 0.000 description 11
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000013016 damping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005686 electrostatic field Effects 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- CIBMHJPPKCXONB-UHFFFAOYSA-N propane-2,2-diol Chemical compound CC(C)(O)O CIBMHJPPKCXONB-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0035—Constitution or structural means for controlling the movement of the flexible or deformable elements
- B81B3/0037—For increasing stroke, i.e. achieve large displacement of actuated parts
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
- G02B26/0808—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more diffracting elements
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Mechanical Light Control Or Optical Switches (AREA)
- Micromachines (AREA)
Abstract
【解決手段】 連続的に可変変位の静電的マイクロメカニカルデバイス5aは、第1電極22を有する可動部材23aと、第2電極12を有する対向面10と、前記可動部材を前記対向面から分離しているチャネル25と、前記チャネル内を満たす液体であって、前記チャネルの少なくとも半分にわたる運動範囲において、前記第1電極と前記第2電極との間に電圧を印加することによって生じる前記可動部材の変位を連続的に可変で安定して制御可能にする高誘電率を有する液体と、前記第1電極と前記第2電極との間に配置された少なくとも一つの固体誘電体層14とを備える。
【選択図】 図6
Description
第1電極を有する可動部材と、
第2電極を有する対向面と、
前記対向面から前記可動部材を分離しているチャネルと、
前記チャネル内に位置している液体であって、前記可動部材を前記チャネルの少なくとも半分にわたる運動範囲において連続的に可変変位であって安定に変位させることができるように、十分に高い誘電率を有する液体と、
前記第1電極と前記第2電極との間に配置された少なくとも一つの固体誘電体層と
を備え、
前記変位は、前記第1電極と前記第2電極との間に電圧を印加することによって生じることを特徴とする。
t=dc+εtε
ここで、
上記式(1)を満たす液体によってプルダウン不安定性を消すことができ、それによって、チャネル4の深さ全体にわたって連続的に可変変位させることができ、安定して変位させることができる。低誘電率の液体は、通常、ガスで満たされるか真空引きされるチャネル4で可能な運動範囲を広げるために用いることができる。そのような低誘電率の液体の場合もなお本発明の範囲に含まれる。
前記可動部材と前記対向面との間の間隔がdcであって、前記少なくとも一つの固体誘電体層の総誘電体厚さがtεである場合、およそ1.5dc/tεより大きな誘電率を有する液体を前記チャネル内に満たすステップを含んでいる。
Claims (3)
- a)第1電極を有する可動部材と、
b)第2電極を有する対向面と、
c)前記可動部材を前記対向面から分離しているチャネルと、
d)前記チャネル内を満たす高誘電率を有する液体であって、前記チャネルの少なくとも半分にわたる運動範囲において、前記第1電極と前記第2電極との間に電圧を印加することによって生じる前記可動部材の変位を連続的に可変で安定して制御可能にする液体と、
e)前記第1電極と前記第2電極との間に配置された少なくとも一つの固体誘電体層と
を備えることを特徴とする連続的に可変変位の静電的マイクロメカニカルデバイス。 - a)第1電極を有する少なくとも一つの可動部材と、
b)第2電極を有する対向面と、
c)前記少なくとも一つの可動部材を前記対向面から分離しているチャネルと、
d)前記チャネル内を満たす高誘電率を有する液体であって、前記チャネルの少なくとも半分にわたっており、入射光の波長λに比例する運動範囲において、前記第1電極と前記第2電極との間に電圧を印加することによって生じる前記可動部材の変位を連続的に可変で安定して制御可能にする液体と、
e)前記第1電極と前記第2電極との間に配置された少なくとも一つの固体誘電体層と
を備えることを特徴とする連続的に可変変位の静電的マイクロオプトメカニカルデバイス。 - a)第1電極を有する可動部材を第2電極を有する対向面からチャネルによって分離して設けるステップと、
b)前記第1電極と前記第2電極の間に少なくとも一つの固体誘電体層を含めるステップと、
c)前記チャネルの少なくとも半分にわたる運動範囲において、前記第1電極と前記第2電極との間に電圧を印加することによって生じる前記可動部材の変位を連続的に可変で安定して制御可能にする高誘電率を有する液体を前記チャネル内に満たすステップと
を含むことを特徴とする連続的に可変変位の静電的マイクロメカニカルデバイスを構成する方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/253747 | 2002-09-24 | ||
US10/253,747 US6844960B2 (en) | 2002-09-24 | 2002-09-24 | Microelectromechanical device with continuously variable displacement |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2004130509A true JP2004130509A (ja) | 2004-04-30 |
JP4732679B2 JP4732679B2 (ja) | 2011-07-27 |
Family
ID=31977806
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003331324A Expired - Fee Related JP4732679B2 (ja) | 2002-09-24 | 2003-09-24 | 連続可変変位型マイクロエレクトロメカニカルデバイス |
Country Status (5)
Country | Link |
---|---|
US (2) | US6844960B2 (ja) |
EP (1) | EP1403210A3 (ja) |
JP (1) | JP4732679B2 (ja) |
CN (1) | CN100542001C (ja) |
HK (1) | HK1061119A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005340536A (ja) * | 2004-05-27 | 2005-12-08 | Kyocera Corp | 可変容量コンデンサ |
JP2006165380A (ja) * | 2004-12-09 | 2006-06-22 | Kyocera Corp | 可変容量コンデンサ |
JP2008147707A (ja) * | 2004-09-27 | 2008-06-26 | Idc Llc | Rfデバイス |
US8078128B2 (en) | 2004-09-27 | 2011-12-13 | Qualcomm Mems Technologies, Inc. | Selectable capacitance circuit |
JP2013543579A (ja) * | 2010-09-13 | 2013-12-05 | 日本テキサス・インスツルメンツ株式会社 | 電源の電圧状況を検出するための方法及び装置 |
Families Citing this family (18)
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US7385268B2 (en) * | 2002-03-08 | 2008-06-10 | Trustees Of Boston University | Method for linearizing deflection of a MEMS device using binary electrodes and voltage modulation |
US7053519B2 (en) * | 2002-03-29 | 2006-05-30 | Microsoft Corporation | Electrostatic bimorph actuator |
US6844960B2 (en) * | 2002-09-24 | 2005-01-18 | Eastman Kodak Company | Microelectromechanical device with continuously variable displacement |
CN1732401A (zh) * | 2002-12-30 | 2006-02-08 | 皇家飞利浦电子股份有限公司 | 含有聚合物致动器的光学装置 |
US7573631B1 (en) | 2005-02-22 | 2009-08-11 | Silicon Light Machines Corporation | Hybrid analog/digital spatial light modulator |
US7566582B2 (en) * | 2005-10-25 | 2009-07-28 | The Charles Stark Draper Laboratory, Inc. | Systems, methods and devices relating to actuatably moveable machines |
US20070090732A1 (en) * | 2005-10-25 | 2007-04-26 | The Charles Stark Draper Laboratory, Inc. | Systems, methods and devices relating to actuatably moveable machines |
JP2007273932A (ja) * | 2006-03-06 | 2007-10-18 | Fujitsu Ltd | 可変キャパシタおよび可変キャパシタ製造方法 |
US7780300B2 (en) * | 2006-06-01 | 2010-08-24 | Falk R Aaron | Variable focus deformable surface using rotation means for rotating the upper and lower material layers about a center axis |
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JP2010135614A (ja) * | 2008-12-05 | 2010-06-17 | Fujitsu Ltd | 可変容量素子 |
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Also Published As
Publication number | Publication date |
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US20040058469A1 (en) | 2004-03-25 |
US6844960B2 (en) | 2005-01-18 |
CN100542001C (zh) | 2009-09-16 |
CN1492569A (zh) | 2004-04-28 |
EP1403210A3 (en) | 2005-10-05 |
US20050094243A1 (en) | 2005-05-05 |
US6919983B2 (en) | 2005-07-19 |
EP1403210A2 (en) | 2004-03-31 |
HK1061119A1 (en) | 2004-09-03 |
JP4732679B2 (ja) | 2011-07-27 |
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