JP2004128210A5 - - Google Patents
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- Publication number
- JP2004128210A5 JP2004128210A5 JP2002290076A JP2002290076A JP2004128210A5 JP 2004128210 A5 JP2004128210 A5 JP 2004128210A5 JP 2002290076 A JP2002290076 A JP 2002290076A JP 2002290076 A JP2002290076 A JP 2002290076A JP 2004128210 A5 JP2004128210 A5 JP 2004128210A5
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- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Priority Applications (16)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002290076A JP4443819B2 (en) | 2002-10-02 | 2002-10-02 | Plasma doping method |
US10/675,922 US20040149219A1 (en) | 2002-10-02 | 2003-09-29 | Plasma doping method and plasma doping apparatus |
CNB031272355A CN100364054C (en) | 2002-10-02 | 2003-09-30 | Plasma doping method and plasma doping device |
CNB2007101119963A CN100511592C (en) | 2002-10-02 | 2003-09-30 | Plasma doping method |
CNB2007101119959A CN100511591C (en) | 2002-10-02 | 2003-09-30 | Plasma doping method |
CNB2007101120000A CN100511593C (en) | 2002-10-02 | 2003-09-30 | Plasma doping method |
CNB2007101119982A CN100543937C (en) | 2002-10-02 | 2003-09-30 | Plasma doping |
CNB2007101270027A CN100561670C (en) | 2002-10-02 | 2003-09-30 | Plasma doping |
CNB2007101270012A CN100514563C (en) | 2002-10-02 | 2003-09-30 | Plasma doping method |
CNB200710111993XA CN100479101C (en) | 2002-10-02 | 2003-09-30 | Plasma doping apparatus |
CN2007101270050A CN101276748B (en) | 2002-10-02 | 2003-09-30 | Plasma doping apparatus |
KR1020030067674A KR101065918B1 (en) | 2002-10-02 | 2003-09-30 | Plasma doping method and plasma doping apparatus |
TW092127187A TWI336103B (en) | 2002-10-02 | 2003-10-01 | Plasma doping method and plasma doping apparatus |
US11/531,637 US7863168B2 (en) | 2002-10-02 | 2006-09-13 | Plasma doping method and plasma doping apparatus |
KR1020100061200A KR101117375B1 (en) | 2002-10-02 | 2010-06-28 | Plasma doping method and plasma doping apparatus |
US12/952,807 US8709926B2 (en) | 2002-10-02 | 2010-11-23 | Plasma doping method and plasma doping apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002290076A JP4443819B2 (en) | 2002-10-02 | 2002-10-02 | Plasma doping method |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2004128210A JP2004128210A (en) | 2004-04-22 |
JP2004128210A5 true JP2004128210A5 (en) | 2005-11-04 |
JP4443819B2 JP4443819B2 (en) | 2010-03-31 |
Family
ID=32282066
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2002290076A Expired - Lifetime JP4443819B2 (en) | 2002-10-02 | 2002-10-02 | Plasma doping method |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP4443819B2 (en) |
CN (8) | CN100511591C (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100835355B1 (en) * | 2006-07-25 | 2008-06-04 | 삼성전자주식회사 | PLASMA Based ION IMPLANTATION APPARATUS |
CN102124543B (en) | 2008-08-15 | 2013-03-13 | 株式会社爱发科 | Plasma doping method and semiconductor device manufacturing method |
KR101685061B1 (en) | 2009-07-17 | 2016-12-09 | 가부시키가이샤 알박 | Substrate processing method |
JP2013165254A (en) * | 2012-01-13 | 2013-08-22 | Tokyo Electron Ltd | Plasma doping apparatus, plasma doping method, method for manufacturing semiconductor element, and semiconductor element |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3090458B2 (en) * | 1990-01-24 | 2000-09-18 | 株式会社日立製作所 | Plasma processing equipment |
JP3862305B2 (en) * | 1995-10-23 | 2006-12-27 | 松下電器産業株式会社 | Impurity introduction method and apparatus, and semiconductor device manufacturing method |
US5830330A (en) * | 1997-05-22 | 1998-11-03 | Tokyo Electron Limited | Method and apparatus for low pressure sputtering |
US6287435B1 (en) * | 1998-05-06 | 2001-09-11 | Tokyo Electron Limited | Method and apparatus for ionized physical vapor deposition |
-
2002
- 2002-10-02 JP JP2002290076A patent/JP4443819B2/en not_active Expired - Lifetime
-
2003
- 2003-09-30 CN CNB2007101119959A patent/CN100511591C/en not_active Expired - Fee Related
- 2003-09-30 CN CNB2007101270012A patent/CN100514563C/en not_active Expired - Fee Related
- 2003-09-30 CN CN2007101270050A patent/CN101276748B/en not_active Expired - Fee Related
- 2003-09-30 CN CNB2007101119982A patent/CN100543937C/en not_active Expired - Fee Related
- 2003-09-30 CN CNB200710111993XA patent/CN100479101C/en not_active Expired - Fee Related
- 2003-09-30 CN CNB2007101120000A patent/CN100511593C/en not_active Expired - Fee Related
- 2003-09-30 CN CNB2007101270027A patent/CN100561670C/en not_active Expired - Fee Related
- 2003-09-30 CN CNB2007101119963A patent/CN100511592C/en not_active Expired - Fee Related