JP2004119505A - Method for washing semiconductor substrate manufacturing equipment and its apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for washing semiconductor substrate manufacturing equipment and its apparatus wherein atmosphere of an etching treatment chamber can be maintained sanitized without deposit when an ITO film formed on a semiconductor substrate is subjected to dry etching. <P>SOLUTION: In a manufacturing process of a semiconductor substrate, a transparent electrode formed on the semiconductor substrate 60 is subjected to dry etching by mounting the substrate 60 on a stage table 52 of the etching treatment chamber 30. The process is provided with a step for carrying the semiconductor substrate 60 after the dry etching outside the etching treatment chamber 30, and a step for cleaning deposit stuck on the etching treatment chamber 30 by second dry etching. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a cleaning method and a cleaning apparatus for a semiconductor substrate manufacturing apparatus, and more particularly, to a method for cleaning deposits adhered in a semiconductor substrate manufacturing apparatus.
[0002]
[Prior art]
2. Description of the Related Art As is well known, a liquid crystal device such as a liquid crystal light valve includes a liquid crystal sealed between two semiconductor substrates such as a glass substrate and a quartz substrate. One of the substrates has, for example, a thin film transistor (Thin Film Transistor). , Hereinafter referred to as TFTs) are arranged in a matrix, an opposing electrode is arranged on the other substrate, and the optical characteristics of the liquid crystal layer sealed between the two substrates are changed according to an image signal, thereby displaying an image. Is possible. Therefore, on these semiconductor substrates, In is used for transmitting light through the liquid crystal device. ₂ O ₃ A transparent electrode (hereinafter, referred to as ITO) composed of a component such as (indium) is formed into a film, and the ITO is patterned into a predetermined shape after the film is formed.
[0003]
In the step of patterning the ITO into a predetermined shape, CF is placed in an etching chamber in which the atmosphere is in a vacuum state. ₄ It is well known that a dry etching method such as a reactive ion etching method (hereinafter referred to as an RIE method) utilizing plasma generated by supplying a reaction gas such as a gas and applying a high frequency power from a high frequency source is used.
[0004]
In the plasma, the gas is dissociated by collision with electrons accelerated by an electric field to generate ions and chemically extremely active atoms and molecules.
[0005]
The RIE method utilizes ions generated by the dissociation of the reaction gas. Etching is performed by accelerating the ions with an electric field and colliding the ions with an object to be etched. Since such ion collision occurs only in the depth direction, the etching proceeds only in the vertical direction. Therefore, this dry etching is anisotropic etching.
[0006]
By the way, dry etching using the RIE method or the like is performed using a halogen gas containing, for example, HI (hydrogen iodide) and HBr (hydrogen bromide) in an etching chamber of a semiconductor substrate manufacturing apparatus in a vacuum atmosphere. Is
[0007]
However, when dry etching is performed on a plurality of semiconductor substrates, for example, a component of ITO, In, which is a component of ITO, ₂ O ₃ Then, for example, a compound generated by reacting the components of HI and HBr adheres. When the number of processed semiconductor substrates increases, the compound accumulates, and as a result, peels off and falls on the substrate. That is, there has been a problem that the deposited material causes patterning failure of the substrate.
[0008]
In order to solve such a problem, in a method of performing dry etching of an ITO film formed on a semiconductor substrate by using a conventional RIE method or the like (for example, see Patent Document 1), hydrogen bromide, After the first dry etching of the ITO film is performed using an etching gas containing hydrogen iodide, a second dry etching is performed using a chlorine-based etching gas.
[0009]
As a result, the deposits attached to the etching chamber are removed by dry etching of the ITO film.
[0010]
[Patent Document 1]
Japanese Patent No. 3054584
[0011]
[Problems to be solved by the invention]
However, in the method disclosed in Patent Document 1 for removing deposits adhered to the etching chamber, the interior of the etching chamber is cleaned with a second etching gas using a chlorine-based etching gas. There is also a risk that the layer-related insulating film formed on the lower surface of the ITO film on the substrate is excessively etched, resulting in a defective product and a reduction in the reliability of the product.
[0012]
Further, when the concentration of the chlorine-based etching gas is reduced to protect the substrate, there is a problem that the cleaning effect in the etching processing chamber is weakened and cleaning takes a long time.
[0013]
The present invention has been made in view of the above problems, and has an apparatus for manufacturing a semiconductor substrate which does not excessively etch even an interlayer insulating film formed on a lower surface of an ITO film formed on a semiconductor substrate. It is an object of the present invention to provide a cleaning method and an apparatus therefor.
[0014]
Means and Action for Solving the Problems
The method for cleaning a semiconductor substrate manufacturing apparatus according to the present invention includes the step of dry-etching the transparent electrode formed on the semiconductor substrate by placing the semiconductor substrate on a stage table in an etching chamber and performing dry etching. A step of carrying the semiconductor substrate after etching out of the etching processing chamber; and a step of cleaning the deposits adhering to the etching processing chamber by a second dry etching.
[0015]
In one aspect of the method of cleaning a semiconductor substrate manufacturing apparatus of the present invention, the second dry etching is performed in a state where nothing is placed on a stage table in the etching processing chamber.
[0016]
According to the method for cleaning a semiconductor substrate manufacturing apparatus of the present invention, the second dry etching for cleaning the deposits adhered to the etching processing chamber is performed after the semiconductor substrate is carried out of the etching processing chamber. This has the effect of preventing the layer-related insulating film formed on the lower surface of the electrode from being excessively etched.
[0017]
In one aspect of the method of cleaning a semiconductor substrate manufacturing apparatus of the present invention, the second dry etching is performed by placing a dummy substrate on a stage table in the etching processing chamber.
[0018]
In one aspect of the method of cleaning a semiconductor substrate manufacturing apparatus according to the present invention, the dummy substrate protects a stage table in the etching chamber.
[0019]
According to this configuration, when performing the second dry etching for cleaning the deposits adhering to the inside of the etching chamber, the dummy substrate is placed on the stage table in the etching chamber, so that the chlorine used for the second dry etching is removed. The stage table can be protected from the system etching gas, and the stage table can be prevented from being deteriorated.
[0020]
In one embodiment of the method of cleaning a semiconductor substrate manufacturing apparatus according to the present invention, the dummy substrate is made of a material that hardly generates deposits generated by reacting with an etching gas used for the second dry etching. It is characterized by comprising.
[0021]
According to this configuration, the etching gas (chlorine-based gas) used for the second dry etching and the material of the dummy substrate hardly react with each other to form deposits. This has the effect that deterioration of the table can be prevented. Examples of the dummy substrate that does not easily react with a chlorine-based gas include quartz and the like.
[0022]
In one aspect of the method of cleaning a semiconductor substrate manufacturing apparatus according to the present invention, the dummy substrate is made of the same material as the semiconductor substrate.
[0023]
According to this configuration, even if the second dry etching is performed using the dummy substrate, since the dummy substrate is made of the same material as the semiconductor substrate, the atmosphere in the etching chamber is changed to the first dry etching. This has the effect of maintaining the same atmosphere as at the time. Examples of the dummy substrate include silicon and the like.
[0024]
In one aspect of the method of cleaning a semiconductor substrate manufacturing apparatus of the present invention, an etching gas used for the second dry etching is different from an etching gas for dry etching the transparent electrode.
[0025]
According to this configuration, since dry etching is performed using an etching gas suitable for each application, efficient dry electrode etching and second dry etching for cleaning deposits adhered to the etching processing chamber can be performed efficiently. It has the effect of being able to.
[0026]
In one embodiment of the method for cleaning a semiconductor substrate manufacturing apparatus of the present invention, the etching gas used for the second dry etching is a Cl2 gas, a BCl3 gas, or a chlorine-based gas which is a mixed gas thereof. It is characterized by using.
[0027]
According to this configuration, when performing the second dry etching for cleaning the deposits adhered to the etching chamber, a strong chlorine-based gas having a cleaning effect is used, so that the deposits adhered to the etching chamber are surely removed. It can be cleaned and has an effect that the etching chamber can be kept clean.
[0028]
Further, in one aspect of the method for cleaning a semiconductor substrate manufacturing apparatus of the present invention, an etching gas used for dry etching of the transparent electrode uses a hydrogen gas containing hydrogen iodide, hydrogen bromide, or the like. I do.
[0029]
According to this configuration, when dry etching the transparent electrode, a halogen gas containing hydrogen iodide, hydrogen bromide, and the like with high selectivity to the base insulating film is used, so that the transparent electrode is efficiently and accurately etched. It has the effect of being able to.
[0030]
Further, the semiconductor substrate is a substrate for an electro-optical device. The substrate for an electro-optical device includes, for example, a substrate used for a liquid crystal device, an electrophoresis device, and the like.
[0031]
As one mode of the cleaning apparatus of the semiconductor substrate manufacturing apparatus of the present invention, a first dry etching is performed in which a transparent electrode formed on a semiconductor substrate is dry-etched by placing the semiconductor substrate on a stage table in an etching processing chamber. Means, a carry-out means for carrying the semiconductor substrate after the dry etching out of the etching processing chamber, and a second dry etching means for cleaning deposits adhered in the etching processing chamber. I do.
[0032]
In one aspect of the cleaning apparatus of the semiconductor substrate manufacturing apparatus of the present invention, the second dry etching means is means for performing dry etching without placing anything on the stage table in the etching processing chamber. It is characterized by the following.
[0033]
According to the cleaning apparatus of the semiconductor substrate manufacturing apparatus of the present invention, the cleaning of the deposits adhered to the etching chamber performed by the second dry etching means is performed after the semiconductor substrate is carried out of the etching chamber. This has the effect of preventing the layer-related insulating film formed on the lower surface of the transparent electrode of the semiconductor substrate from being excessively etched during the cleaning of the processing chamber.
[0034]
Further, as one aspect of the cleaning apparatus of the semiconductor substrate manufacturing apparatus of the present invention, the second dry etching means is means for performing a dry etching by placing a dummy substrate on a stage table in the etching processing chamber. It is characterized by the following.
[0035]
According to this configuration, when cleaning the deposits adhering to the inside of the etching processing chamber by using the second dry etching means, the dummy substrate is placed on the stage base in the etching processing chamber, so that the second dry etching is performed. The stage table can be protected from chlorine-based etching gas used for the means, and the stage table can be prevented from being deteriorated.
[0036]
BEST MODE FOR CARRYING OUT THE INVENTION
First, prior to describing an embodiment of the present invention, a manufacturing process of a semiconductor substrate will be described using, for example, a TFT substrate included in a liquid crystal device as an example.
[0037]
FIG. 1 is a flowchart showing the steps of manufacturing the TFT substrate in the order of steps, and FIGS. 2A to 5V are longitudinal sectional views in the steps of manufacturing the TFT substrate.
First, in step S1 of FIG. 1, as shown in FIG. 2A, a groove 11 is formed in a region where each TFT element is to be formed in a semiconductor element substrate 10 made of quartz glass or the like by etching or the like. Then, in step S2, as shown in FIG. 2B, the light shielding film 12 is formed in the groove 11, and the process proceeds to step S3.
[0038]
In step S3, as shown in FIG. 2C, a first interlayer insulating film 13 is formed on the light shielding film 12, and the process proceeds to step S4. In step S4, as shown in FIG. The semiconductor layer 5 is formed on the one interlayer insulating film 13, and the process proceeds to Step S5.
[0039]
In step S5, as shown in FIG. 2E, the lower and upper gate insulating films 2 are formed on the semiconductor layer 5, and the process proceeds to step S6. In the subsequent step S6, as shown in FIG. Then, the scanning line 3 of polysilicon is formed on the gate insulating film 2, and the process proceeds to step S7.
[0040]
Next, in the case of the N-channel type, in step S7, as shown in FIG. 2 (g), an impurity, for example, P ions 7 is added (hereinafter referred to as "doping") to add a low-concentration source to the semiconductor layer. After forming the region 20 and the drain region 21, the process proceeds to step S8. In step S8, a resist (not shown) is formed on the scanning line 3 and on the periphery thereof, and then, as shown in FIG. P ions 22 are doped to form high concentration source / drain regions 1a and 1b, and the process proceeds to step S9. Thus, an element having an LDD structure having low-concentration source / drain regions and high-concentration source / drain regions is formed.
[0041]
In step S9, as shown in FIG. 3I, the second interlayer insulating film 14 is formed on the element having the LDD structure, and the process proceeds to step S10. In step S10, as shown in FIG. First contact holes 24a and 26a connecting between the semiconductor layer and an intermediate conductive layer 15 described later are formed, and the process proceeds to step S11.
[0042]
In the next step S11, as shown in FIG. 3 (k), an intermediate conductive layer 15 is formed on the TFT element, and the process proceeds to step S12. In step S12, as shown in FIG. A dielectric film 17 is formed on the layer 15 and the process proceeds to step S13. In step S13, as shown in FIG. 3 (m), a capacitance line 18 is formed, and the process proceeds to step S14. This constitutes a storage capacity.
[0043]
In step S14, as shown in FIG. 3 (n), a third interlayer insulating film 19 is formed on the capacitance line 18 and the process proceeds to step S15. In step S15, the third interlayer insulating film 19 shown in FIG. After performing the hydrogenation treatment on the film 19, as shown in FIG. 4 (p), a second contact hole 24b is formed in the third interlayer insulating film 19, and the process proceeds to step S16.
[0044]
In step S16, as shown in FIG. 4 (q), for example, aluminum, which becomes the data line 6, is formed on the third interlayer insulating film 19 so as to fill the contact hole 24b, and the process proceeds to step S17. In step S17, a fourth interlayer insulating film 25 is formed as shown in FIG. 4 (r), and the process proceeds to step S18. Further, in step S18, as shown in FIG. A third contact hole 26b is formed in the film 25 and the third interlayer insulating film 19 for connecting the intermediate conductive layer 15 and an ITO 9 described later, and the process proceeds to step S19.
[0045]
Finally, in step S19, as shown in FIG. 4 (t), ITO 9 is formed on the inner peripheral surface of the second contact hole 26b and on the fourth interlayer insulating film 25. After that, as shown in FIG. 5 (u), a patterned resist 4 is formed on the ITO 9, and as shown in FIG. 5 (v), the ITO 9 is etched by dry etching, Is formed in a predetermined shape. Through these steps, a TFT substrate is manufactured.
[0046]
Next, the above-described step S19 in FIG. 1, the etching method for forming the ITO 9 shown in FIG. 5 (v), and the method for cleaning the etching chamber after the etching process will be described.
[0047]
Note that the semiconductor substrate manufacturing apparatus in the present embodiment is a dry etching apparatus.
[0048]
FIG. 6 is a flowchart illustrating a method of cleaning a semiconductor substrate manufacturing apparatus according to one embodiment of the present invention. FIG. 7 is a plan view illustrating a semiconductor substrate manufacturing apparatus according to one embodiment of the present invention. Is an enlarged vertical sectional view of a main part schematically showing the configuration of an etching processing chamber in the semiconductor substrate manufacturing apparatus of FIG. 7, and FIG. 9 shows a modification of the cleaning method of the semiconductor substrate manufacturing apparatus in one embodiment of the present invention. FIG. 10 is a plan view showing a modification of the semiconductor substrate manufacturing apparatus according to the embodiment of the present invention.
[0049]
As shown in FIG. 7, the dry etching apparatus 100 includes a plurality of etching chambers 30 in which a semiconductor substrate to be processed as described above is mounted on a stage 52 to perform etching, and It has an arm 31 for carrying out and out, a first substrate carrying section 32 which is in a vacuum state during the etching process, a substrate accommodating cassette 36 for accommodating a plurality of semiconductor substrates 60, and a first substrate accommodating cassette 36. A second substrate transport unit 35 that maintains the air condition even during the etching process for transporting the substrate to the substrate transport unit 32, and is adjacent to the second substrate transport unit 35 and the first substrate transport unit 32 A substrate loading chamber 33 serving as an unloading port for loading a substrate from the substrate transport unit 35, and a substrate unloading process for returning the substrate etched in the etching processing chamber 30 to the substrate transport unit 35. It is composed of a 34. The arm 31 constitutes an unloading unit that unloads the semiconductor substrate after the dry etching to the outside of the etching chamber.
[0050]
As shown in FIG. 8, the etching chamber 30 is formed to have the same area as the surface area of the semiconductor substrate 60, and has a plasma-resistant stage base 52 on which the loaded semiconductor substrate 60 is placed. A cathode 53 for generating a plasma 56, which is disposed on the table 52, and an anode 57 disposed at a position facing the cathode 53 in the upper part of the etching chamber 30, a cathode 53 and an anode 57, A high frequency power supply (RF) 51 for applying high frequency power for generating plasma 56, a supply port 54 for supplying a reactive gas for dry etching, and an outlet 55 for discharging the reactive gas are provided.
[0051]
In order to etch the ITO 9 of the semiconductor substrate 60 shown in FIG. 1 and the semiconductor substrate 60 shown in FIG. 5 (v) into a predetermined shape, first, as shown in FIG. 6, the semiconductor substrate 60 is etched in step S30. It is carried into the processing chamber 30.
[0052]
More specifically, one of, for example, 20 semiconductor substrates 60 stored in the substrate storage cassette 36 is transferred to the second substrate transfer unit 35, and thereafter, the first substrate transfer unit 32 and the etching process are performed. The chamber 30 is evacuated to perform dry etching.
[0053]
After the first substrate transfer section 32 and the etching processing chamber 30 are evacuated, the semiconductor substrate 60 is loaded into the substrate loading chamber 33, and then the semiconductor substrate 60 is moved by the arm 31 as shown in FIG. The wafer is conveyed into the etching chamber 30 and placed on the stage 52 so as to cover the stage. After that, it moves to step S31.
[0054]
Next, in step S31, first dry etching for etching the ITO 9 of the semiconductor substrate 60 into a predetermined shape is performed. As shown in FIG. 8, when a halogen gas containing HI, HBr, and the like is supplied from a supply port 54 and then high-frequency power is applied from a high-frequency power supply 51 to an anode 57 and a cathode 53, a discharge is generated and plasma 56 is generated. appear. Here, the reason why the halogen gas containing HI, HBr, or the like is used as the etching gas is that the etching selectivity with respect to the fourth interlayer insulating film 25 (see FIG. 4F) is high. The halogen gas containing HI, HBr, and the like constitutes first etching means.
[0055]
In the plasma 56, the gas is dissociated by the collision of the electrons accelerated by the electric field, and the cations dissociated by the plasma are accelerated by the electric field and collide with the ITO 9 of the semiconductor substrate 60. The first dry etching of the ITO 9 is performed by the collision of the cations. After the completion of the first dry etching, the process proceeds to step S32.
[0056]
In step 32, the semiconductor substrate 60 after the completion of the first dry etching is transported outside the etching processing chamber 30. First, the etching gas is exhausted from the exhaust port 55, and then the semiconductor substrate 60 is unloaded from the etching processing chamber 30 by the arm 31, and then is loaded into the substrate unloading chamber 34. The substrate is carried into the substrate transport section 35 and further stored in the substrate storage cassette 36. Thereafter, the process proceeds to step S33.
[0057]
In step S33, it is determined whether the first dry etching process performed in steps S31 to S32 has reached 20 semiconductor substrates 60 or not. If the number of processed semiconductor substrates has reached 20, the process proceeds to step S34, and if not, the process returns to step S30 to transport the next semiconductor substrate 60 to the second substrate transport unit 35, Steps S30 to S32 for performing the first dry etching of the ITO 9 by the same method as described above are repeated until the number of processed substrates reaches 20.
[0058]
Here, as described above, when the first dry etching is performed on a plurality of semiconductor substrates, In, which is a component of ITO 9, is deposited on, for example, a ceiling and an inner wall of the etching processing chamber 30. ₂ O ₃ And, for example, a compound generated by the reaction of HI and HBr components adheres, and when the number of processed semiconductor substrates increases, this compound accumulates, and as a result, peels off and falls on the substrate, There has been a problem that the dropped deposits cause poor patterning of the substrate.
[0059]
Therefore, in order to clean the etching processing chamber, first, in step S34, the semiconductor substrate 60 is set in an “empty” state in which the semiconductor substrate 60 is not mounted on the stage 52 in the etching processing chamber 30. Thereafter, the first substrate transfer unit 32 and the etching chamber 30 are again evacuated to perform the second dry etching, and the process proceeds to step S35.
[0060]
In step S35, a second dry etching is performed to clean the etching chamber. After the first substrate transport unit 32 and the etching chamber 30 are evacuated, the deposits adhering to the above-described etching chamber are supplied from the supply port 54 of the etching chamber 30 as shown in FIG. For cleaning, a cl2 gas, a BCl3 gas, or a chlorine-based gas that is a mixture thereof is supplied, and then high-frequency power is applied from the high-frequency power supply 51 to the anode 57 and the cathode 53, thereby causing discharge. The plasma 56 is generated, the deposits adhering in the etching chamber are cleaned, and the second dry etching is performed.
[0061]
Here, the reason why the cl2 gas, the BCl3 gas, or the chlorine-based gas which is a mixed gas thereof is used as the etching gas is that the cleaning effect is strong. The cl2 gas, the BCl3 gas, or a chlorine-based gas that is a mixed gas thereof constitutes a second etching unit.
[0062]
After the completion of the second dry etching, the etching gas is discharged from the discharge port 55, and the cleaning of the etching processing chamber 30 is completed. Thereafter, in order to continue the etching of the ITO 9 on the semiconductor substrate 60, the process returns to Step S30, and Steps S30 to S35 are repeated a specified number of times.
[0063]
As described above, the method and the apparatus for cleaning the semiconductor substrate manufacturing apparatus according to the embodiment of the present invention are capable of removing the deposits generated when the ITO 9 of the semiconductor substrate 60 is dry-etched into a predetermined shape and adhered to the etching processing chamber 30. Since the cleaning is performed after the semiconductor substrate 60 is carried out of the etching processing chamber, a product defect due to excessive etching of the base insulating film can be prevented.
[0064]
Further, since a strong etching gas having a high cleaning effect can be used for cleaning the etching chamber 30, the etching chamber can be efficiently and reliably cleaned, and the etching chamber can be cleaned. Can be kept.
[0065]
Since the stage 52 of the etching chamber 30 in the present embodiment is made of a material having excellent plasma resistance, the stage is not deteriorated by the second dry etching using a chlorine-based gas. Absent.
[0066]
Further, in the above-described method for cleaning the semiconductor substrate manufacturing apparatus of the present embodiment, the etching processing chamber is cleaned with the etching processing chamber being empty. However, the present invention is not limited to this. As shown, the second dry etching may be performed using the dummy substrate 61.
[0067]
As shown in FIG. 9, first, first dry etching is performed on the ITO 9 of the semiconductor substrate 60 by using the same method as in the steps 30 to 33 in FIG. Repeat until 20 sheets are reached. Then, in step S44, as shown in FIG. 10, a dummy substrate 61 made of a material (for example, quartz) that is unlikely to generate a deposit is disposed in the substrate storage cassette 46 of the semiconductor substrate manufacturing apparatus 100. The dummy substrate 61 is carried into the etching processing chamber 30 and placed on the stage 52 so as to cover the stage (see FIG. 8), and the process proceeds to step S45.
[0068]
Next, in step S45, using a chlorine-based gas, a second dry etching is performed using the same method as the second dry etching shown in FIG. 6, and the process proceeds to step S46. Finally, in step S46, The etching gas is discharged from the discharge port 55 in FIG. 8, and the cleaning of the etching processing chamber 30 is completed. Thereafter, in order to continue the etching of the ITO 9 on the semiconductor substrate 60, the process returns to step S40, and steps S40 to S46 are repeated a specified number of times.
[0069]
According to this, by performing the second dry etching while protecting the stage table 52 using the dummy substrate 61, it is possible to prevent the stage table 52 from being deteriorated by the plasma, and further to perform the second dry etching. Even when the dummy substrate 61 is etched, the dummy substrate is made of a material that hardly generates deposits, so that the etching chamber can be cleaned as in the case where the etching chamber is emptied, and It can be kept clean.
[0070]
The dummy substrate may be made of the same material as that of the semiconductor substrate (for example, silicon (preferably having higher purity)). Accordingly, the atmosphere in the etching chamber can be maintained at the same atmosphere as that in the above-described first dry etching. After the first dry etching of the semiconductor substrate after the second dry etching, Dry etching can be performed without changing the etching characteristics.
[0071]
Further, in the present embodiment, the cleaning of the etching processing chamber is performed after performing 20 etchings of the ITO. However, the number of processed semiconductor substrates is increased or decreased depending on the thickness of the ITO. Of course, it is also good.
[0072]
Further, in the second dry etching, a chlorine-based gas such as a cl2 gas or a BCl3 gas is used. However, the present invention is not limited to this. If the gas has a high cleaning effect on deposited deposits, for example, SF6, Needless to say, the same effect can be obtained by using a gas such as CF4 and CF4.
[0073]
Further, it has been described that the deposits adhering to the etching processing chamber are generated when the ITO of the TFT substrate is etched. However, the present invention is not limited to this. Instead of the TFT substrate, a TFD substrate and a substrate formed opposite thereto are formed. For example, the present invention may be applied to all substrates formed by etching ITO.
[0074]
The method and apparatus for manufacturing a semiconductor substrate of the present invention also include a substrate used for an apparatus, an electrophoresis apparatus, and the like, in addition to a liquid crystal device.
[Brief description of the drawings]
FIG. 1 is a flowchart showing a manufacturing process of a TFT substrate in a process order;
FIG. 2 is a cross-sectional view of a TFT substrate, showing a step of forming a trench and a step of forming a source / drain region.
FIG. 3 is a cross-sectional view of a TFT substrate showing an insulating film forming process to a hydrogenation process.
FIG. 4 is a cross-sectional view of a TFT substrate showing a contact hole forming step to an ITO film forming step;
FIG. 5 is a cross-sectional view of a TFT substrate showing a resist forming step to a dry etching step;
FIG. 6 is a flowchart illustrating a method of cleaning a semiconductor substrate manufacturing apparatus according to an embodiment of the present invention;
FIG. 7 is a plan view showing a semiconductor substrate manufacturing apparatus according to an embodiment of the present invention;
8 is an enlarged longitudinal sectional view of a main part schematically showing the configuration of an etching chamber in the semiconductor substrate manufacturing apparatus of FIG. 7;
FIG. 9 is a flowchart showing a modification of the method for cleaning a semiconductor substrate manufacturing apparatus according to one embodiment of the present invention;
FIG. 10 is a plan view showing a modification of the semiconductor substrate manufacturing apparatus according to the embodiment of the present invention.
[Explanation of symbols]
9 Transparent electrode (ITO)
30 ... Etching chamber
31 Arm (carry-out means)
52… Stage stand
60 ... Semiconductor substrate
61 ... Dummy substrate

Claims (14)

In the process of manufacturing a semiconductor substrate in which a transparent electrode formed on a semiconductor substrate is dry-etched by mounting the semiconductor substrate on a stage table in an etching processing chamber,
Carrying out the semiconductor substrate after the dry etching out of the etching processing chamber,
Cleaning the deposits adhered in the etching chamber by a second dry etching;
A method for cleaning a semiconductor substrate manufacturing apparatus, comprising: 2. The method according to claim 1, wherein the second dry etching is performed in a state where nothing is placed on a stage table in the etching processing chamber. 3. 2. The method according to claim 1, wherein the second dry etching is performed by placing a dummy substrate on a stage in the etching chamber. 3. 4. The method according to claim 3, wherein the dummy substrate protects a stage in the etching chamber. 4. The semiconductor substrate manufacturing apparatus according to claim 3, wherein the dummy substrate is made of a material that hardly generates a deposit generated by reacting with an etching gas used for the second dry etching. Cleaning method. 4. The method according to claim 1, wherein the dummy substrate is made of the same material as the semiconductor substrate. 5. 2. The method of claim 1, wherein an etching gas used for the second dry etching is different from an etching gas for dry etching the transparent electrode. 3. 6. The semiconductor substrate manufacturing apparatus according to claim 1, wherein an etching gas used for the second dry etching is a Cl2 gas, a BCl3 gas, or a chlorine-based gas that is a mixed gas thereof. Cleaning method. The method for cleaning a semiconductor substrate manufacturing apparatus according to claim 1, wherein an etching gas used for dry etching of the transparent electrode is a halogen gas containing hydrogen iodide, hydrogen bromide, or the like. The method according to claim 1, wherein the semiconductor substrate is a substrate for an electro-optical device. First dry etching means for dry-etching the transparent electrode formed on the semiconductor substrate by placing the semiconductor substrate on a stage table in an etching processing chamber;
An unloading unit that unloads the semiconductor substrate after the dry etching out of the etching processing chamber,
Second dry etching means for cleaning deposits adhered to the etching chamber;
A cleaning apparatus for a semiconductor substrate manufacturing apparatus, comprising: 10. The cleaning apparatus for a semiconductor substrate manufacturing apparatus according to claim 9, wherein said second dry etching means is means for performing dry etching without placing anything on a stage table of said etching processing chamber. 10. The cleaning apparatus for a semiconductor substrate manufacturing apparatus according to claim 9, wherein the second dry etching means is means for performing a dry etching by placing a dummy substrate on a stage table in the etching processing chamber. 14. The cleaning apparatus according to claim 11, wherein the semiconductor substrate is a substrate for an electro-optical device.

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