JP2004101351A - Manufacturing method of probe, probe card and mold for probe - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide manufacturing methods for probe, probe card and mold for probe which can manufacture accurate probes for responding to objects to be measured, such as semiconductor integrated circuits advanced in high integration and with reduced scale. <P>SOLUTION: For the manufacturing method of the probe 100, a mold 800 with a shape corresponding to the probe 100 is formed, by pushing the mold for probe 300 to a soft material plate member 700, a plated structure 100a to be a probe 100 is formed on the mold 800 surface, and then the mold 800 is removed. <P>COPYRIGHT: (C)2004,JPO

Description

[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a method for manufacturing a probe used for a probe card for measuring electrical characteristics of a semiconductor integrated circuit, a method for manufacturing a probe card, and a method for manufacturing a probe die.
[0002]
[Prior art]
For example, in a cantilever type probe card (for example, Patent Documents 1 and 2), a large number of probes are generally attached to a substrate by machining or manual work.
[0003]
[Patent Document 1]
JP 2002-022771 A
[Patent Document 2]
JP 2000-088884 A
[0004]
[Problems to be solved by the invention]
However, the objects to be measured such as semiconductor integrated circuits and LCD devices in recent years have been highly integrated and miniaturized, and probe cards for measuring the electrical characteristics of these objects to be measured have been manufactured by conventional machining or The cantilever type manufactured by hand has become inadequate. That is, when many probes are manually arranged on the substrate, there is a variation in the height and positional accuracy of the contact portion at the tip of the probe card that contacts the electrode of the object to be measured. In addition, variations in the height and positional accuracy of the contact portion have been a factor of lack of stability of contact of the object to be measured with the electrode. Furthermore, since manual assembly requires skill, there is an undesirable point in terms of productivity.
[0005]
Further, the probe used in the conventional probe card has a disadvantage that it cannot make stable contact with the electrodes of the semiconductor integrated circuit.
[0006]
The present invention has been made in view of the above circumstances, and is capable of manufacturing a highly accurate probe in responding to an object to be measured such as a semiconductor integrated circuit with high integration and miniaturization. An object of the present invention is to provide a method for manufacturing a probe, a method for manufacturing a probe card, and a method for manufacturing a probe die.
[0007]
[Means for Solving the Problems]
The method of manufacturing a probe of the present invention is to form a mold having a shape corresponding to the probe by pressing the probe mold against a soft plate member, and forming a plating structure serving as a probe on the surface of the mold. After the formation, the mold is removed.
[0008]
A method of manufacturing a probe card according to the present invention includes a probe used when measuring electrical characteristics of a semiconductor integrated circuit formed on a semiconductor substrate, and a probe card including a probe substrate to which the probe is connected. In the manufacturing method, a step of forming a mold having a shape corresponding to the probe by pressing the probe mold against a soft material plate member, and forming a plating structure serving as a probe on the surface of the mold, A step of positioning the probe substrate on which the wiring pattern is formed and the mold so as to face each other, and having a conductivity between the upper surface of the plating structure to be a probe formed on the mold and the wiring pattern of the probe board. Bonding with an adhesive.
[0009]
The method of manufacturing the probe mold includes forming a concave portion in the substrate, forming a first seed layer in at least the concave portion of the substrate, and forming the concave portion in the substrate on which the first seed layer is formed. Forming a first resist layer having a first opening exposing the first resist layer, forming a first plating structure having conductivity over the concave portion and the first opening, and forming a first resist layer and a first resist layer. Forming a second seed layer on the plated structure and forming a second resist layer on the second seed layer having a second opening exposing at least a portion of the first plated structure; And forming a second plating structure in the second opening by connecting the second plating structure to the first plating structure, and removing the substrate and the first and second resist layers. And
[0010]
Another method of manufacturing the probe mold includes forming an inclined portion at an end of the substrate, forming a seed layer on at least the inclined portion of the substrate, and forming at least the inclined portion on the substrate. The method is characterized by comprising a step of forming a resist layer having an exposed opening, a step of forming a conductive plating structure in the opening, and a step of removing the substrate and the resist layer.
[0011]
More preferably, a lithography technique is used in the step of forming the opening, and it is desirable that an X-ray is used as a light source for the photolithography.
[0012]
More preferably, as a means for forming the plating structure, it is desirable to use electroplating, electroless plating, sputtering or CVD.
[0013]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, a method for manufacturing a probe of the present invention will be described with reference to the drawings. FIG. 1 is a schematic explanatory view showing steps up to application of a resist in a method of manufacturing a probe according to an embodiment of the present invention. FIG. 2 shows steps up to forming a seed layer in the same manufacturing method. FIG. 3 is a schematic explanatory view showing a process up to plating the inside of a patterned mold in the same manufacturing method, and FIG. 4 is a schematic diagram showing a process until a probe mold is formed in the same manufacturing method. FIG. 5 is a schematic explanatory view showing a step of forming a plated structure inside a probe mold in the same manufacturing method, and FIG. 6 is a schematic explanatory view showing the same manufacturing method. It is a schematic side view of a probe.
[0014]
First, before describing a method of manufacturing a probe according to an embodiment of the present invention, a probe manufactured by the method of manufacturing a probe will be described with reference to FIGS. 6 and 7B.
[0015]
The probe 100 has a contact portion 110 whose tip is pointed into a downwardly facing quadrangular cone, an arm portion 120 extending horizontally from the upper end of the contact portion, and a connecting portion 130 which is the terminal end of the arm portion 120. It is formed in. The contact portion 110 is a portion that contacts the electrode 11 of the semiconductor integrated circuit 10, and the connection portion 130 is a portion that is adhered to the wiring pattern 210 of the probe board 200 forming a part of the probe card A with a conductive adhesive. is there. In general, several hundred to several thousand probes 100 are used for one probe card A.
[0016]
The method of manufacturing the probe 100 is such that a probe mold 300 having the same shape as the probe 100 used when measuring the electrical characteristics of the semiconductor integrated circuit 10 formed on the semiconductor substrate B is formed on a soft material plate. The mold 100 having a shape corresponding to the probe 100 is created by pressing against the shaped member 700, and the probe 100 is manufactured by forming the plating structure 100 a on the surface of the mold 800. The details will be described below.
[0017]
First, the probe mold 300 is manufactured based on FIGS. As the substrate 400 used for manufacturing the probe die 300, a silicon substrate such as a wafer is used. In the substrate 400, as shown in FIG. 1A, a plurality of recesses 411 are formed on one surface 410 by anisotropic etching or the like. The concave portion 411 is a portion where the first plating structure 310 of the probe mold 300, that is, the contact portion 110 of the probe 100 is formed, and is formed in a downwardly facing quadrangular conical shape. The recess 411 is formed at a position corresponding to the arrangement pattern of the conductive pads 10 of the semiconductor integrated circuit 10.
[0018]
As shown in FIG. 1B, a first seed layer 510 serving as an electrode when the first plating structure 310 is formed on one surface 410 is formed on the substrate 400 by sputtering, vapor deposition, or the like. You. Although the first seed layer 510 is formed on one surface 410 of the substrate 400, it is sufficient that the first seed layer 510 is formed on at least the concave portion 411.
[0019]
On one surface 410 of the substrate 400, as shown in FIG. 1C, a first photoresist 610 is applied on the first seed layer 510 by an appropriate method such as spin coating. After the first photoresist 610 is cured, polishing is performed by lapping or CMP (Chemical Mechanical Polishing) to obtain flatness.
[0020]
Thereafter, a mask (not shown) provided with an opening (not shown) at the same position as the position of the recess 411 corresponding to the arrangement pattern of the recesses 411 of the substrate 400 is used for the first photoresist 610. Exposure is performed. Then, the first photoresist 610 after the exposure is developed, and as shown in FIG. 2A, the first opening 421 from which the first photoresist 610 is removed only from the upper part of the concave portion 411 is formed. First resist layer 420 is formed. Note that X-rays are used as a light source for this lithography. Also, a photosensitive thick film resist is used for the first photoresist 610.
[0021]
The dimension of the concave portion 411 where the first photoresist 610 is removed, that is, the total size of the depth of the first opening 421 of the first resist layer 420 and the depth of the concave portion 411 is about 10 μm to 1 mm.
[0022]
The substrate 400 is plated using an electroforming technique such as electroplating, electroless plating, sputtering, or CVD to form a first plating structure 310 over the recess 411 and the first opening 421 ( FIG. 2 (b)). Then, the first plating structure 310 is polished by lapping or CMP in order to obtain flatness.
[0023]
After polishing the substrate 400, when forming the second plating structure 320 on the first resist layer 420 and the first plating structure 310 as shown in FIG. A second seed layer 520 serving as an electrode is formed by sputtering, vapor deposition, or the like.
[0024]
Then, a second photoresist 620 to be the second resist layer 430 is applied on the second seed layer 520 by an appropriate method such as spin coating (see FIG. 3A). After the second photoresist 620 is cured, polishing is performed by lapping or CMP to obtain flatness. A photosensitive thick film resist is also used for the second photoresist 620.
[0025]
The second photoresist 620 is exposed using a mask (not shown) provided with an opening (not shown) corresponding to the second plating structure 320 of the probe mold 300, that is, the arm 120 of the probe 100. Is performed. Then, development is performed on the exposed second photoresist 620 to form a second resist layer 430 having a second opening 431 where the first plating structure 310 is exposed, as shown in FIG. 3B. Is done. Note that X-rays are used as a light source for this lithography. In addition, a photosensitive thick film resist is used for the second photoresist 620.
[0026]
The depth of the second opening 431 formed in the second resist layer 430 is about several tens μm to several hundred μm, and the length is about several hundred μm to several mm.
[0027]
Plating is performed on the substrate 400 using electroforming techniques such as electroplating, electroless plating, sputtering or CVD, and the second plating structure 320 is formed in the second opening 431 (FIG. 3C). reference). The second plating structure 320 is electrically and mechanically connected to the first plating structure 310 because the first plating structure 310 is exposed from the second opening 431 via the second seed layer 520. It is formed in the state where it was done. The second plating structure 320 is a portion corresponding to the arm section 120 of the probe 100. Then, from this state, plating is further performed as shown in FIG.
[0028]
Thereafter, when the substrate 400, the first resist layer 420, and the second resist layer 430 are removed, the probe mold 300 having the same shape as the probe 100 is manufactured. That is, the connected first plating structure 310 and second plating structure 320 become the probe mold 300 as shown in FIG. 4B.
[0029]
Through such a process, the probe mold 300 created is manufactured with high precision because the lithography technique using X-rays and the electroforming technique are used. Further, since the probe mold 300 can be used repeatedly, there is an advantage in reducing costs.
[0030]
Next, as shown in FIG. 5A, the probe die 300 is pressed against the heated plate member 700 to form a die 800 having a probe die recess 810 having a shape corresponding to the probe 100 (FIG. 5A). FIG. 5 (b)). Here, a resin plate made of acrylic or the like is used as the plate-shaped member 700, and a mold 800 is formed by hot embossing or injection molding. Thereby, the mold 800 can be mass-produced. The plate-shaped member 700 does not have to be plate-shaped as long as the probe mold 300 can be pressed.
[0031]
As shown in FIG. 5C, a seed layer 530 serving as an electrode when forming the plating structure 100a (which will later become the probe 100) is formed in the probe-type concave portion 810 of the die 800 by sputtering, vapor deposition, or the like. Created by
[0032]
The mold 800 is plated by using electroforming techniques such as electroplating, electroless plating, sputtering, or CVD to form a plating structure 100a in the probe-shaped recess 810 (FIG. 5D). reference). After that, the plating structure 100a is polished by lapping or CMP to obtain flatness.
[0033]
Then, when the mold 800 is removed, the probe 100 is manufactured. That is, the plating structure 100a becomes the probe 100.
[0034]
Through these steps, the probe 100 as shown in FIG. 6 is manufactured, and many probes 100 are manufactured at a time. Further, since the probe mold 300 manufactured with high accuracy is used, the mass-produced probe 100 is also manufactured with high accuracy.
[0035]
Hereinafter, an operation of manufacturing a probe card using the probe 100 manufactured by the above-described probe manufacturing method will be described with reference to FIGS. 7 and 8. FIG. 7 is a schematic explanatory view showing a process of attaching a manufactured probe to a probe substrate in a method of manufacturing a probe card according to an embodiment of the present invention, and FIG. 8 is a probe card manufactured by the manufacturing method. FIG. 3 is a schematic rear view of FIG.
[0036]
The mold 800 in the state shown in FIG. 5D (that is, the mold 800 with the plating structure 100a attached to the probe-shaped recess 810 of the mold 800) and the wiring constituting a part of the probe card A The probe substrate 200 on which the pattern 210 is formed is opposed to and aligned, and the upper surface of the plating structure 100a to be the probe 100 formed on the mold 800 and the wiring pattern 210 of the probe substrate 200 are electrically conductive adhesive. (See FIG. 7A).
[0037]
At this time, in manufacturing the probe die 300, the concave portion 411 formed on the substrate 400 is formed in advance so as to correspond to the arrangement pattern of the electrodes 11 on the semiconductor substrate B. A large number of probes 100 can be connected to the probe substrate 200 at once by simply aligning and bonding the mold 800 with the mold 800. The probe 100 can be replaced one by one.
[0038]
After the probe 100 is connected to the probe substrate 200, the mold 800 is removed as shown in FIG. 7B, and the probe card A as shown in FIG. 8 is manufactured.
[0039]
Through these steps, the probe card A can obtain the probe 100 with high accuracy, and as a result, high integration and miniaturization can be achieved. Also, since a large number of probes 100 can be easily attached to the probe substrate 200 at once, the working accuracy can be improved and the working time can be shortened as compared with conventional machining or manual work.
[0040]
Hereinafter, a method of manufacturing a probe card C according to another embodiment of the present invention will be described with reference to FIGS. FIG. 9 is a schematic explanatory view showing a process up to application of a resist in a method of manufacturing a probe card according to another embodiment of the present invention, and FIG. FIG. 11 is a schematic explanatory diagram showing a process up to plating of a probe, FIG. 11 is a schematic explanatory diagram showing a process up to forming a probe mold in the same manufacturing method, and FIG. Inside To FIG. 13 is a schematic side view of a probe card manufactured by the same manufacturing method, and FIG. 14 is a schematic rear view of a probe card manufactured by the same manufacturing method. FIG. The description of the same parts as those in the method of manufacturing the probe card A is omitted, and the same reference numerals are used for the same components.
[0041]
First, a probe mold 300 having the same shape as the probe 100 used for the probe card C (see FIGS. 13B and 14) is manufactured. The difference from the method of manufacturing the probe card A is that, as shown in FIG. 9A, an inclined portion 413 is formed at an end 412 of the substrate 400 instead of the plurality of recesses 411 of the substrate 400. is there. Then, as shown in FIGS. 9B and 9C, a seed layer 540 is formed on one surface 410 of the substrate 400 and the inclined portion 413, and a photoresist 630 is applied on the seed layer 540. Note that the photoresist 630 may be formed on the seed layer 540.
[0042]
A resist layer 440 having an opening 441 is formed on the substrate 400 by using a lithography technique. The most different from the method of manufacturing the probe card A is a step of forming the opening 441 by using the lithography technique. Specifically, the photoresist 630 is exposed using a mask (not shown) provided with an opening (not shown) at a position corresponding to the arrangement pattern of the electrodes 11 on the semiconductor substrate B. Then, the exposed photoresist 630 is developed to expose at least the inclined portion 413 at a position corresponding to the arrangement pattern of the electrodes 11 on the semiconductor substrate B, as shown in FIG. A resist layer 440 having a plurality of openings 441 is formed.
[0043]
A plating structure 330 is formed on the substrate 400 as shown in FIG. Then, from this state, plating is further performed as shown in FIG. Through these steps, a probe mold 300 as shown in FIG. 11A is manufactured.
[0044]
Then, as shown in FIG. 11B, the probe die 300 is pressed against the heated plate-shaped member 700 to form a die 800 having a probe die recess 810 having a shape corresponding to the probe 100 (FIG. 11B). 11 (c)).
[0045]
As shown in FIG. 12, after forming a seed layer 530 on the mold 800, plating is performed using an electroforming technique to form a plated structure 100a.
[0046]
Then, as shown in FIG. 13A, the mold 800 and the probe substrate 200 on which the wiring pattern 210 constituting a part of the probe card C (see FIGS. 13B and 14) are formed. Are opposed to each other, and the upper surface of the plating structure 100a to be the probe 100 formed on the mold 800 and the wiring pattern 210 of the probe substrate 200 are bonded using a conductive adhesive.
[0047]
At this time, in manufacturing the probe mold 300, the openings 441 of the resist layer 440 formed on the substrate 400 are formed in advance so as to correspond to the arrangement pattern of the electrodes 11 on the semiconductor substrate B. By simply aligning and bonding the probe card A and the mold 800, a large number of probes 100 can be connected to the probe substrate 200 at once.
[0048]
Then, after connecting the probe 100 to the probe substrate 200 and removing the mold 800, a probe card C as shown in FIG. 13B is manufactured.
[0049]
Through these steps, the probe card C can manufacture the probe 100 with high accuracy by using the lithography technique using X-rays and the electroforming technique. As a result, when attaching the probe 100 to the probe substrate 200, the pitch interval between the probes 100 can be reduced, so that high integration and miniaturization can be achieved. Also, since a large number of probes 100 can be easily attached to the probe substrate 200 at once, the working accuracy can be improved and the working time can be shortened as compared with conventional machining or manual work.
[0050]
Here, it is assumed that the probe 100 is manufactured using the probe mold 300, but the present invention is not limited to this, and any probe using a mold for manufacturing the probe may be used.
[0051]
Although X-rays are used as a light source in the lithography technology, a light source used in the conventional lithography technology, such as ultraviolet light, can be used.
[0052]
【The invention's effect】
In the method of manufacturing a probe according to claim 1 of the present invention, a probe mold is pressed against a plate-shaped member made of a soft material to form a mold having a shape corresponding to the probe, and the probe is formed on the surface of the mold. After the plating structure is formed, the mold is removed.
[0053]
According to the probe manufacturing method of the first aspect, since the probe mold is used, probes having a uniform shape can be mass-produced. As a result, it is possible to cope with an object to be measured such as a highly integrated and miniaturized semiconductor integrated circuit.
[0054]
A method of manufacturing a probe card according to a second aspect of the present invention includes a probe used when measuring electrical characteristics of a semiconductor integrated circuit formed on a semiconductor substrate, and a probe substrate to which the probe is connected. In the method of manufacturing a probe card, a mold having a shape corresponding to the probe is created by pressing a probe mold against a soft plate member, and a plating structure serving as a probe is formed on the surface of the mold. And a step of positioning the probe substrate on which the wiring pattern is formed and the mold so as to face each other, and the upper surface of the plating structure serving as a probe formed on the mold and the wiring pattern of the probe board. Bonding using an electrically conductive adhesive.
[0055]
According to the probe manufacturing method of the second aspect, since a probe mold is used, a highly accurate probe can be obtained, and as a result, high integration and miniaturization can be achieved. Also, since a large number of probes can be easily attached to the probe substrate at once, the working accuracy can be improved and the working time can be shortened as compared with conventional machining or manual work.
[0056]
A method of manufacturing a probe mold according to claim 3 of the present invention is a method of manufacturing the probe mold according to claim 1 or 2, wherein a step of forming a recess in the substrate and at least the recess of the substrate is performed. Forming a first seed layer on the substrate, forming a first resist layer having a first opening exposing the concave portion on the substrate on which the first seed layer is formed, Forming a first plating structure having conductivity over the opening, forming a second seed layer on the first resist layer on which the first plating structure is formed, and forming a second seed layer on the second seed layer; Forming a second resist layer having a second opening exposing at least a portion of the first plating structure; and applying a second plating structure to the first plating structure in the second opening. Connecting and forming the substrate and the first It is characterized by a step of removing the second resist layer.
[0057]
A method of manufacturing a probe mold according to claim 4 of the present invention is a method of manufacturing the probe mold according to claim 1 or 2, wherein a step of forming an inclined portion at an end portion of the substrate; Forming a seed layer on at least the inclined portion, forming a resist layer having an opening exposing at least the inclined portion on the substrate, and forming a conductive plating structure in the opening. And a step of removing the substrate and the resist layer.
[0058]
According to the method of manufacturing a probe mold of claim 3 or 4, since the lithography technique is used, a highly accurate probe mold can be manufactured, and as a result, high integration and miniaturization are achieved. Can be applied to an object to be measured such as a semiconductor integrated circuit in which the process has progressed. In addition, since it can be used repeatedly, there is an advantage in reducing costs.
[0059]
In the method of manufacturing a probe mold according to claim 5 of the present invention, a lithography technique is used in the step of forming the opening, and an X-ray is used as a light source for the lithography.
[0060]
The method for manufacturing a probe mold according to claim 6 of the present invention is the method for manufacturing a probe mold according to claim 1, wherein the means for forming the plating structure includes electroplating and electroless plating. , Sputtering or CVD is used.
[0061]
According to the method for manufacturing a probe mold of claim 5 or 6, a highly accurate probe mold can be obtained.
[Brief description of the drawings]
FIG. 1 is a schematic explanatory view showing steps until a resist is applied in a method of manufacturing a probe according to an embodiment of the present invention.
FIG. 2 is a schematic explanatory view showing steps up to forming a seed layer in the manufacturing method.
FIG. 3 is a schematic explanatory view showing steps up to plating the inside of a patterned mold in the manufacturing method.
FIG. 4 is a schematic explanatory view showing steps up to creation of a probe mold in the manufacturing method.
FIG. 5 is a schematic explanatory view showing a process of forming a plating structure inside a probe mold in the same manufacturing method.
FIG. 6 is a schematic side view of a probe manufactured by the same manufacturing method.
FIG. 7 is a schematic explanatory view showing a process of attaching a manufactured probe to a probe substrate in the method of manufacturing a probe card according to the embodiment of the present invention.
FIG. 8 is a schematic rear view of the probe card manufactured by the same manufacturing method.
FIG. 9 is a schematic explanatory view showing steps up to application of a resist in a method of manufacturing a probe card according to another embodiment of the present invention.
FIG. 10 is a schematic explanatory view showing steps up to plating the inside of a patterned mold in the manufacturing method.
FIG. 11 is a schematic explanatory view showing steps up to creation of a probe mold in the same manufacturing method.
FIG. 12 is a schematic explanatory view showing a process until a plating structure is formed inside a probe mold in the manufacturing method.
FIG. 13 is a schematic side view of a probe card manufactured by the same manufacturing method.
FIG. 14 is a schematic rear view of the probe card manufactured by the same manufacturing method.
[Explanation of symbols]
A probe card
C probe card
100 probes
200 probe board
300 Probe mold
400 substrates
B semiconductor substrate
10 Semiconductor integrated circuit
11 electrodes

Claims (6)

A mold having a shape corresponding to the probe is created by pressing the probe mold against a soft plate member, and after forming a plating structure serving as a probe on the surface of the mold, the mold is removed. A method for manufacturing a probe, characterized in that: In a method of manufacturing a probe card including a probe used for measuring an electrical characteristic of a semiconductor integrated circuit formed on a semiconductor substrate and a probe substrate to which the probe is connected, a probe mold is softened. A step of forming a mold having a shape corresponding to the probe by pressing against a plate member of a material, forming a plating structure serving as a probe on the surface of the mold, and a probe substrate on which a wiring pattern is formed; A step of positioning the mold so as to oppose, and a step of bonding the upper surface of the plating structure to be a probe formed on the mold and the wiring pattern of the probe substrate using a conductive adhesive. A method for manufacturing a probe card, comprising: 3. The method for manufacturing a probe mold according to claim 1, wherein a step of forming a concave portion in the substrate, a step of forming a first seed layer in at least the concave portion of the substrate, and forming the first seed layer. Forming a first resist layer having a first opening exposing the concave portion on the formed substrate; forming a first plating structure having conductivity over the concave portion and the first opening; Forming a second seed layer on the first resist layer and the first plating structure; and having a second opening on the second seed layer at least a portion of the first plating structure is exposed. Forming a second resist layer, forming a second plating structure in the second opening by connecting to the first plating structure, and removing the substrate and the first and second resist layers Characterized by having Method of manufacturing a probe mold. 3. The method for manufacturing a probe mold according to claim 1, wherein a step of forming an inclined portion at an end of the substrate, a step of forming a seed layer on at least the inclined portion of the substrate, and at least forming the seed layer on the substrate. Forming a resist layer having an opening exposing the inclined portion, forming a conductive plating structure in the opening, and removing the substrate and the resist layer. Manufacturing method of probe mold. 5. The method for manufacturing a probe mold according to claim 3, wherein the step of forming the opening uses a lithography technique, and an X-ray is used as a light source for the photolithography. Method for manufacturing probe die. 6. The method for manufacturing a probe mold according to claim 3, wherein the means for forming the plating structure includes electroplating, electroless plating, sputtering or CVD. Manufacturing method.

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