JP2004087476A - Structure of hot plate for heating wafer, and method for fixing electrode of hot plate - Google Patents

Structure of hot plate for heating wafer, and method for fixing electrode of hot plate Download PDF

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Publication number
JP2004087476A
JP2004087476A JP2003182270A JP2003182270A JP2004087476A JP 2004087476 A JP2004087476 A JP 2004087476A JP 2003182270 A JP2003182270 A JP 2003182270A JP 2003182270 A JP2003182270 A JP 2003182270A JP 2004087476 A JP2004087476 A JP 2004087476A
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Prior art keywords
heating
dovetail groove
wafer
insertion portion
dovetail
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JP2003182270A
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Japanese (ja)
Inventor
Mitsuaki Mochizuki
望月　光明
Shiyouji Tanaka
田中　召次
Nobuyuki Takai
高井　信行
Shinsaku Okawa
大河　晋作
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Okazaki Manufacturing Co Ltd
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Okazaki Manufacturing Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a structure of a hot plate for heating a wafer, by which not only a ceramic substrate can be fast connected to an end of a resistance heater and an electrode of the resistance heater, but also a hot plate for heating a wafer can be used repeatedly, and the hot plate for heating the wafer can be easily handled to evenly heat the wafer, and a method for fixing an electrode of the hot plate. <P>SOLUTION: After jointing an insertion part 6 of which the diameter is made larger than that of a metal pin 3 to the root of a metal pin 3 serving as the electrode to form the metal pin into a reversed T-shape, and inserting the insertion part 6 into a dovetail groove 4 provided in a ceramic substrate 1, the insertion part 6 is swung or slid along the dovetail groove 4 and locked to a fixing part 5 of the dovetail groove narrowly provided at an opening 4a of the dovetail groove 4, and the metal pin 3 is connected to an end 2a of a resistance heater 2. <P>COPYRIGHT: (C)2004,JPO

Description

【０００１】
【発明の属する技術分野】
本発明は、シリコンウェハ上に半導体集積回路を形成する製造過程において均一にウェハを加熱するためのウェハ加熱用熱盤に関するものであり、詳しくは該ウェハ加熱用熱盤の基体となるセラミック基板に、抵抗発熱体の端部と、抵抗発熱体の電極とを固定するウェハ加熱用熱盤の構造および電極固定方法に関するものである。
【０００２】
【従来の技術】
シリコンウェハ上に半導体集積回路を形成する製造過程においては、一般的に加熱処理炉中にウェハを加熱するためのウェハ加熱用熱盤が設けられ、このウェハ加熱用熱盤によって、多数枚のウェハが加熱される。
【０００３】
このウェハ加熱用熱盤は、セラミック基板と、通電により熱を発生させる抵抗発熱体と、抵抗発熱体の電極とが一体に設けられたものであるが、これらを一体にする方法としては、従来、セラミック基板と抵抗発熱体の端部とに貫通孔を穿ち、電極となるボルトを両者の貫通孔に挿入してナットで締め付けていた。
【０００４】
【発明が解決しようとする課題】
しかしながら、セラミック基板と抵抗発熱体の端部とを抵抗発熱体の電極となるボルトとナットで締め付ける上述のウェハ加熱用熱盤の構造および熱盤の電極固定方法では、ボルトとナットを強く締め付け過ぎた場合、脆いセラミック基板を破損してしまうという問題点があった。また、締め付け力が不十分な場合は、ウェハ加熱用熱盤の昇温、冷却を繰返すうちに、ボルトとナットとが緩み、ウェハ加熱用熱盤を繰り返し使用することができなかったり、ウェハの加熱処理上求められる均一な加熱を果たすことができないという不具合があった。また、その都度、ボルトとナットの増し締めを注意深く行わなければならないなど、ウェハ加熱用熱盤の取り扱いが容易でなかった。
【０００５】
本発明は上記不具合に鑑みてなされたものであり、セラミック基板と、抵抗発熱体の端部と、電極とを堅固に連結するだけでなく、ウェハ加熱用熱盤を繰り返し使用することができ、また、ウェハ加熱用熱盤の取り扱いが容易で、ウェハの加熱処理上求められる均一な加熱を果たすことができるウェハ加熱用熱盤の構造および熱盤の電極固定方法を提供することを課題としている。
【０００６】
なお、本願に記載するウェハ加熱用熱盤の構造および熱盤の電極固定方法は、上述のウェハ加熱用熱盤の構造および熱盤の電極固定方法の従来技術に該当せず、出願人の知る限りでは本願出願に類する公知例が無いため、本出願の時点では開示すべき先行技術文献情報は保有していない。
【０００７】
【課題を解決するための手段】
上記課題を解決するための本発明のウェハ加熱用熱盤の電極固定方法は、半導体ウェハ製造工程のウェハ加熱処理に用いるウェハ加熱用熱盤において、ウェハ加熱用熱盤のセラミック基板に抵抗発熱体の端部と、抵抗発熱体の電極とを固定する方法であって、上記抵抗発熱体の電極となる金属ピンの根元の部分に金属ピンよりも拡径した挿入部を連設して逆Ｔ字状とするとともに、上記挿入部を上記セラミック基板に刻設した蟻溝に挿入した後、蟻溝に対し旋回もしくはスライドさせて蟻溝の開口部に狭隘に設けられた蟻溝固定部に係止して金属ピンをセラミック基板に固定し、この金属ピンと抵抗発熱体の端部とを接続することを特徴とするものである。
【０００８】
また、本発明のウェハ加熱用熱盤の構造は、半導体ウェハ製造工程においてウェハ加熱処理に用いるウェハ加熱用熱盤の構造であって、蟻溝を刻設したセラミック基板と、通電により熱を発生させる抵抗発熱体と、この抵抗発熱体の電極となる金属ピンとを備え、上記金属ピンは、根元の部分に拡径した挿入部が連設されて逆Ｔ字状を形成し、上記挿入部を上記セラミック基板の蟻溝に挿入した挿入状態から、金属ピンを蟻溝に対し旋回もしくはスライドさせて蟻溝の開口部に狭隘に設けられた蟻溝固定部に係止して金属ピンをセラミック基板に固定し、この金属ピンと上記抵抗発熱体の端部とを接続したことを特徴とするものである。
【０００９】
これらによれば、挿入部を蟻溝に差し込んだ後、旋回もしくはスライドさせて蟻溝の開口部に狭隘に設けられた蟻溝固定部に係止して金属ピンをセラミック基板に固定するので、セラミック基板と、抵抗発熱体の端部と、金属ピンとを容易かつ堅固に連結することができる。
【００１０】
また、金属ピンがセラミック基板から脱離することが無くなるので、ウェハ加熱用熱盤を繰り返し使用することができる。
【００１１】
さらに、ウェハ加熱用熱盤上には金属ピンの小形状の突起しかないので、ウェハ加熱用熱盤の取り扱いが容易となる。
【００１２】
また、金属ピンと抵抗発熱体の端部とが堅固にセラミック基板に連結することができる結果、ウェハの加熱処理上求められる均一な加熱を果たす。
【００１３】
上記蟻溝の蟻溝固定部は、蟻溝の開口部から蟻溝の深部にかけて漸次拡径する蟻溝勾配面を有し、上記挿入部は、上記蟻溝勾配面に概ね接する挿入部勾配面を有し、上記挿入部勾配面を蟻溝勾配面に当接させることにより、挿入部を蟻溝の蟻溝固定部に係止することが好ましい。
【００１４】
この好ましい態様によれば、挿入部の挿入部勾配面を蟻溝固定部の蟻溝勾配面に当接させて挿入部を蟻溝の蟻溝固定部に係止するので、蟻溝固定部における係止に係る応力を分散させることができる結果、応力集中によるセラミック基板の破損を有効に防止することができる。
【００１５】
上記蟻溝の開口部は概ね長円形の長穴形状を呈し、上記挿入部は、この蟻溝の開口部の形状に概ね適合する長円形の形状に形成されて蟻溝の開口部に挿入可能であることが好ましい。
【００１６】
この好ましい態様によれば、挿入部が、蟻溝の開口部の形状に概ね適合する長円形の形状に形成されているので、開口部の過剰な開口が少ない結果、セラミック基板の強度を維持しながら、より堅固に金属ピンをセラミック基板に連結することができる。
【００１７】
また、本発明に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法においては、上記蟻溝の開口部に金属ピンの挿入部が挿入された挿入状態から、金属ピンの挿入部を金属ピンの軸を中心に蟻溝の開口部に対して概ね９０度旋回させることにより、挿入部を蟻溝固定部に係止するであることが好ましい。
【００１８】
この好ましい態様によれば、挿入部を金属ピンの軸を中心に蟻溝の開口部に対して概ね９０度旋回させることにより、挿入部を蟻溝固定部に係止するので、さらに、開口部４ａの過剰な開口を少なくすることができる結果、セラミック基板の強度を維持しながら、さらに堅固に金属ピンをセラミック基板に連結することができる。
【００１９】
上記蟻溝の開口部は、概ね長円形の長穴形状を呈するとともに、この長円形の長軸の一端に、開口が拡がった円形開口部を有し、上記挿入部は、この蟻溝の円形開口部の形状に概ね適合する断面円形の形状に形成されて蟻溝の円形開口部に挿入可能であり、この円形開口部から蟻溝に上記挿入部を挿入した後、開口部の他端の方向に挿入部をスライドさせて挿入部を蟻溝固定部に係止することが好ましい。
【００２０】
この好ましい態様によれば、挿入部を長円形の長軸の一端の円形開口部から挿入した後、開口部の他端の方向に直線的にスライドさせて蟻溝固定部に係止することができるので、挿入部勾配面と蟻溝勾配面とを、加工が簡単な平面として構成することができる。
【００２１】
また、上記金属ピンは、抵抗発熱性の材料から構成され、通電されて熱を発生することにより、金属ピンに接続される給電線からの放熱を抑えてウェハ加熱用熱盤温度を均一化することが好ましい。
【００２２】
この好ましい態様によれば、金属ピンが、通電されて熱を発生することにより、金属ピンに接続される給電線からの放熱を抑えてウェハ加熱用熱盤の温度を均一化するので、より効果的にウェハを均一に加熱することができる。
【００２３】
【発明の実施の形態】
以下、添付図面を参照しながら本発明の好ましい実施の形態について詳述する。
【００２４】
図１は本発明の実施の形態に係るウェハ加熱用熱盤１０の構成を示す概念図であり、図２は本発明の実施の形態に係るウェハ加熱用熱盤１０の抵抗発熱体２の端部２ａの構成を示す平面図である。
【００２５】
図１、図２を参照して、図示の本発明の第１の実施の形態に係るウェハ加熱用熱盤１０は、セラミック基板１と、抵抗発熱体２と、抵抗発熱体２の電極となる金属ピン３とを備えている。
【００２６】
上記セラミック基板１は、ウェハ加熱用熱盤１０の基体となる部材である。このセラミック基板１は、製品とする図略の半導体ウェハの全面を均一に加熱することが求められるため、ウェハに近似した材質、形状とする必要がある。このため、材質としては、製品とするウェハに近似した熱特性を有する種類のセラミックが採用され、また、半導体ウェハの形状に合わせて円盤状の形状に成形されている。
【００２７】
上記抵抗発熱体２は、電流を通じることにより発熱し、ウェハ加熱用熱盤１０全体とウェハを加熱するものであり、ニクロム線、タングステン等の板状の電熱線で構成され、単位面積当たりの発熱量を大きくするために、また、ウェハを均一に加熱するために、セラミック基板１の上で蛇行するように形成されている。
【００２８】
この抵抗発熱体２の端部２ａには貫通孔２ｂが穿たれており、この貫通孔２ｂは、抵抗発熱体２の電極となる金属ピン３を挿通してはんだで接続することが可能になっている。
【００２９】
次に、図３は本発明の第１の実施の形態に係るウェハ加熱用熱盤１０の蟻溝４の構成を示す平面図であり、図４は図３のＡ−Ａ断面図である。また、図５は本発明の第１の実施の形態に係るウェハ加熱用熱盤１０の蟻溝４に挿入部６が挿入された挿入状態を示す斜視図であり、図６は挿入部６が蟻溝４に係止された係止状態を示す斜視図である。
【００３０】
図３、図４に示すように、上記セラミック基板１の表面には、ダイヤモンド・カッタ等の手段を用いて切削加工することにより、蟻溝４が刻設されている。
【００３１】
この蟻溝４は、概ね長円形の長穴形状を呈する開口部４ａを有しており、この開口部４ａには後述する金属ピン３の挿入部６（図５）を係止することができる狭隘に設けられた蟻溝固定部５が設けられている。
【００３２】
すなわち、この蟻溝４は、短径約１．２〜２．０ｍｍの開口部４ａに対して短径約１．４〜２．２ｍｍの長円形の底部４ｂを有し、開口部４ａから底部４ｂにかけて約０．５〜１．０ｍｍの深さに設けられることにより、蟻溝４の開口部４ａから蟻溝４の深部にかけて漸次拡径する蟻溝勾配面５ａが形成され、この蟻溝勾配面５ａにより、上記の蟻溝固定部５が構成されている。
【００３３】
上記金属ピン３は、セラミック基板１と、抵抗発熱体２の端部２ａ（図２）とを固定するとともに、抵抗発熱体２の電極となるものである。この金属ピン３は、図５、図６に示すように、金属ピン３の根元の部分に金属ピン３よりも拡径した挿入部６が連設された逆Ｔ字状となっている。
【００３４】
この逆Ｔ字の形状は、本実施形態では、金属製棒部材を切削することにより形成されるが、本実施形態においては、より効果的に均一な加熱を果たすために材料として、ニクロム、コンスタンタンなどの抵抗発熱性のニッケル合金が採用され、この抵抗発熱性の材料からなる金属ピンが、通電されて熱を発生することにより、金属ピンに接続される給電線からの放熱を抑えてウェハ加熱用熱盤の温度を均一化するように構成されている。
【００３５】
そして、この挿入部６は、概ね長円形の形状に形成されて、図５に示すように蟻溝４の開口部４ａに挿入可能となっている。
【００３６】
また、この挿入部６は、本実施形態では、蟻溝勾配面５ａに概ね接する円錐面からなる挿入部勾配面６ａを有しており、蟻溝４の開口部４ａに挿入された挿入状態から、金属ピン３の軸を中心に蟻溝４の開口部４ａに対して概ね９０度旋回させることにより、この挿入部勾配面６ａを蟻溝勾配面５ａに当接させて、挿入部を蟻溝固定部に係止する係止状態（図６）にすることができるように構成されている。
【００３７】
また、この挿入部６が蟻溝４に係止された係止状態では、セラミック基板１に対して挿入部６の熱膨張に係る応力が働かないようにするために、挿入部６と蟻溝４の底部４ｂとの間には僅かに間隙が設けられている。
【００３８】
次に図７を参照して、本発明の第１の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法とその作用について説明する。
【００３９】
図７は本発明の第１の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法を示す説明図であり、（ａ）は、挿入部６が蟻溝４に挿入された挿入状態を示す平面図を、（ｂ）は、（ａ）の挿入状態の側面図をそれぞれ示している。また、（ｃ）は、挿入状態から、金属ピン３の軸を中心に蟻溝４の開口部４ａに対して概ね９０度旋回させた係止状態を示す側面図を、また、（ｄ）は、（ｃ）の係止状態を９０度異なる方向から見た側面図をそれぞれ示している。
【００４０】
これらの図を参照して、本発明の第１の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法は、まず、図７（ａ）、（ｂ）に示すように、抵抗発熱体２の電極となる金属ピン３の根元の部分に金属ピン３よりも拡径した挿入部６を連設して逆Ｔ字状とした上で、この挿入部６を蟻溝４に挿入し、抵抗発熱体２の端部２ａを金属ピン３に挿通させる。
【００４１】
次に、この挿入状態から、挿入部６を蟻溝４に対し、金属ピン３の軸を中心に蟻溝４の開口部４ａに対して概ね９０度旋回させることにより、図７（ｃ）、（ｄ）に示すように、挿入部勾配面６ａを蟻溝勾配面５ａに当接させて、挿入部を蟻溝固定部に係止して金属ピン３をセラミック基板１に固定する。
【００４２】
また、抵抗発熱体２の端部２ａに穿たれた貫通孔２ｂに沿って、抵抗発熱体２の端部２ａと、抵抗発熱体２の電極となる金属ピン３とをはんだ７で接続する。
【００４３】
この時、セラミック基板１に対して挿入部６の熱膨張に係る応力が働かないようにするために、挿入部６と蟻溝４の底部４ｂとの間には僅かに間隙を設けるようにする。
【００４４】
そして、最後に、詳しくは図示しないが、セラミック基板１上に固定した金属ピン３の頭部と、供給電源からの図略の導線の端子を溶接して抵抗発熱体２に通電可能とする。
【００４５】
以上説明したように、本発明の第１の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法によれば、挿入部６を蟻溝４に差し込んだ後、旋回させて蟻溝４の開口部４ａに狭隘に設けられた蟻溝固定部５に係止して金属ピン３をセラミック基板１に固定するので、セラミック基板１と、抵抗発熱体２の端部２ａと、金属ピン３とを容易かつ堅固に連結することができる。
【００４６】
また、金属ピン３がセラミック基板１から脱離することが無くなるので、ウェハ加熱用熱盤を繰り返し使用することができる。
【００４７】
さらに、ウェハ加熱用熱盤上には金属ピン３の小形状の突起しかないので、ウェハ加熱用熱盤の取り扱いが容易となる。
【００４８】
また、金属ピン３と抵抗発熱体２の端部２ａとが堅固にセラミック基板１に連結することができる結果、ウェハの加熱処理上求められる均一な加熱を果たす。
【００４９】
そして、本発明の第１の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法によれば、挿入部６の挿入部勾配面６ａを蟻溝固定部５の蟻溝勾配面５ａに当接させて挿入部６を蟻溝４の蟻溝固定部５に係止するので、蟻溝固定部５における係止に係る応力を分散させることができる結果、応力集中によるセラミック基板１の破損を有効に防止することができる。
【００５０】
また、挿入部６を金属ピン３の軸を中心に蟻溝４の開口部４ａに対して概ね９０度旋回させることにより、挿入部６を蟻溝固定部５に係止するので、開口部４ａの過剰な開口が少ない結果、セラミック基板１の強度を維持しながら、さらに堅固に金属ピン３をセラミック基板１に連結することができる。
【００５１】
次に、図８は本発明の第２の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法を示す説明図であり、（ａ）は、挿入部６が蟻溝４に挿入された挿入状態を示す平面図を、（ｂ）は、（ａ）の側面図をそれぞれ示している。また、（ｃ）は、挿入状態から、金属ピン３の軸を中心に蟻溝４の開口部４ａに対して概ね９０度旋回させた係止状態を示す側面図を、（ｄ）は、（ｃ）の係止状態を９０度異なる方向から見た側面図をそれぞれ示している。
【００５２】
図８（ａ）、（ｂ）に示すように、第２の実施形態では、挿入部６は、蟻溝４の開口部４ａの形状に概ね適合する長円形の形状に形成されている。
【００５３】
このように、本発明の第２の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法によれば、挿入部６が、蟻溝４の開口部４ａの形状に概ね適合する形状に形成されているので、さらに、開口部４ａの過剰な開口を少なくすることができる結果、セラミック基板１の強度を維持しながら、より堅固に金属ピン３をセラミック基板１に連結することができる。
【００５４】
また、図９は本発明の第３の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法を示す説明図であり、（ａ）は、挿入部６が蟻溝４に挿入された挿入状態を示す平面図を、（ｂ）は、（ａ）の側面図をそれぞれ示している。また、（ｃ）は、挿入状態から、開口部４ａの他端の方向に挿入部６をスライドさせて挿入部６を蟻溝固定部５に係止させた係止状態を示す側面図を、（ｄ）は、（ｃ）の係止状態を９０度異なる方向から見た側面図をそれぞれ示している。
【００５５】
図９（ａ）、（ｂ）に示すように、この第３の実施形態では、蟻溝４の開口部４ａは、概ね長円形の長穴形状を呈するとともに、この長円形の長軸の一端に、開口が拡がった円形開口部４ｃを有している。そして挿入部６は、この蟻溝４の円形開口部４ｃの形状に概ね適合する断面円形の形状に形成されて蟻溝４の円形開口部４ｃに挿入可能であり、この円形開口部４ｃから蟻溝４に上記挿入部６を挿入した後、開口部４ａの他端の方向に挿入部６をスライドさせて挿入部６を蟻溝固定部５に係止するように構成されている。
【００５６】
このように、第３の実施形態では、挿入部６を長円形の長軸の一端の円形開口部４ｃから挿入した後、開口部４ａの他端の方向に直線的にスライドさせて蟻溝固定部５に係止することができるので、挿入部勾配面６ａと蟻溝勾配面５ａとを、加工が簡単な平面として構成することができる。
【００５７】
また、第１〜３の実施形態では、金属ピン３が、通電されて熱を発生することにより、金属ピン３に接続される図略の給電線からの放熱を抑えてウェハ加熱用熱盤１０の温度を均一化するので、より効果的にウェハを均一に加熱することができる。
【００５８】
上述した実施の形態は本発明の好ましい具体例を例示したものに過ぎず、本発明は上述した実施の形態に限定されない。
【００５９】
例えば、セラミック基板１の形状は、本発明を限定するものではない。必ずしも図示の形状のように、円盤状の形状に成形される必要はない。
【００６０】
また、抵抗発熱体２の材質、形状も本発明を限定するものではなく、必ずしもニクロム線、タングステン等の電熱線で構成され、セラミック基板１の上で蛇行するように配置される必要はない。
【００６１】
蟻溝４の開口部４ａも、必ずしも概ね長円形の長穴形状に限定されない。金属ピン３の挿入部６を挿入して、係止することができる狭隘に設けられた蟻溝固定部５が設けられていれば、種々の設計変更が可能である。
【００６２】
挿入部６の逆Ｔ字の形状も、本実施形態では、金属製棒部材を切削することにより形成されているが、金属ピン３の根元の部分に棒状又は板状の金属の小片を溶接することにより形成することも可能である。
【００６３】
また、挿入部６は、必ずしも概ね長円形の形状に形成される必要はなく、蟻溝４の開口部４ａに挿入可能かつ蟻溝固定部５に係止可能であれば、種々の設計変更が可能である。
【００６４】
また、金属ピン３に抵抗発熱体２の端部２ａを挿通するのは、挿入部６を蟻溝４に係止する前でも、後でも良いし、金属ピン３の頭側からでも挿入部６側からでもよい。
【００６５】
その他、本発明の特許請求の範囲内で種々の設計変更が可能であることはいうまでもない。
【００６６】
【発明の効果】
以上説明したように、本発明によれば、セラミック基板と、抵抗発熱体の端部と、電極とを堅固に連結するだけでなく、ウェハ加熱用熱盤を繰り返し使用することができ、ウェハ加熱用熱盤の取り扱いが容易で、ウェハの加熱処理上求められる均一な加熱を果たすという顕著な効果を奏する。
【図面の簡単な説明】
【図１】本発明の実施の形態に係るウェハ加熱用熱盤の構成を示す概念図である。
【図２】本発明の実施の形態に係るウェハ加熱用熱盤の抵抗発熱体の端部の構成を示す平面図である。
【図３】本発明の第１の実施の形態に係るウェハ加熱用熱盤の蟻溝の構成を示す平面図である。
【図４】図３のＡ−Ａ断面図である。
【図５】本発明の第１の実施の形態に係るウェハ加熱用熱盤の蟻溝に挿入部が挿入された挿入状態を示す斜視図である。
【図６】本発明の第１の実施の形態に係るウェハ加熱用熱盤において、挿入部が蟻溝に係止された係止状態を示す斜視図である。
【図７】本発明の第１の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法を示す説明図であり、（ａ）は、挿入部が蟻溝に挿入された挿入状態を示す平面図を、（ｂ）は、（ａ）の挿入状態の側面図をそれぞれ示している。また、（ｃ）は、挿入状態から、金属ピンの軸を中心に蟻溝の開口部に対して概ね９０度旋回させた係止状態を示す側面図を、また、（ｄ）は、（ｃ）の係止状態を９０度異なる方向から見た側面図をそれぞれ示している。
【図８】本発明の第２の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法を示す説明図であり、（ａ）は、挿入部が蟻溝に挿入された挿入状態を示す平面図を、（ｂ）は、（ａ）の側面図をそれぞれ示している。また、（ｃ）は、挿入状態から、金属ピンの軸を中心に蟻溝の開口部に対して概ね９０度旋回させた係止状態を示す側面図を、（ｄ）は、（ｃ）の係止状態を９０度異なる方向から見た側面図をそれぞれ示している。
【図９】本発明の第３の実施の形態に係るウェハ加熱用熱盤の構造および熱盤の電極固定方法を示す説明図であり、（ａ）は、挿入部が蟻溝に挿入された挿入状態を示す平面図を、（ｂ）は、（ａ）の側面図をそれぞれ示している。また、（ｃ）は、挿入状態から、開口部の他端の方向に挿入部をスライドさせて挿入部を蟻溝固定部に係止させた係止状態を示す側面図を、（ｄ）は、（ｃ）の係止状態を９０度異なる方向から見た側面図をそれぞれ示している。
【符号の説明】
１　　　　　　セラミック基板
２　　　　　　抵抗発熱体
２ａ　　　　抵抗発熱体の端部
３　　　　　　金属ピン
４　　　　　　蟻溝
４ａ　　　　開口部
４ｃ　　　　円形開口部
５　　　　　　蟻溝固定部
５ａ　　　　蟻溝勾配面
６　　　　　　挿入部
６ａ　　　　挿入部勾配面
１０　　　　ウェハ加熱用熱盤[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a heating plate for heating a wafer for uniformly heating a wafer in a manufacturing process of forming a semiconductor integrated circuit on a silicon wafer, and more particularly, to a ceramic substrate serving as a base of the heating plate for heating a wafer. The present invention relates to a structure of a heating plate for heating a wafer for fixing an end portion of a resistance heating element and an electrode of the resistance heating element, and an electrode fixing method.
[0002]
[Prior art]
In a manufacturing process for forming a semiconductor integrated circuit on a silicon wafer, a heating plate for heating the wafer is generally provided in a heating furnace, and a large number of wafers are provided by the heating plate for heating the wafer. Is heated.
[0003]
This hot plate for heating a wafer is provided with a ceramic substrate, a resistance heating element that generates heat when energized, and electrodes of the resistance heating element. Then, a through hole is formed in the ceramic substrate and the end of the resistance heating element, and a bolt serving as an electrode is inserted into both through holes and fastened with a nut.
[0004]
[Problems to be solved by the invention]
However, according to the above-described structure of the heating plate for heating a wafer and the method of fixing the electrodes of the heating plate, the bolts and the nuts are excessively tightened. In such a case, there is a problem that the brittle ceramic substrate is damaged. Also, if the tightening force is insufficient, the bolts and nuts become loose during repeated heating and cooling of the wafer heating hot plate, making it impossible to use the wafer heating hot plate repeatedly, There was a problem that uniform heating required in the heat treatment could not be achieved. Further, each time the bolts and nuts must be carefully tightened, the handling of the wafer heating hot plate is not easy.
[0005]
The present invention has been made in view of the above-described problems, and not only firmly connects the ceramic substrate, the end portion of the resistance heating element, and the electrode, it is possible to repeatedly use the hot plate for wafer heating, It is another object of the present invention to provide a structure of a hot plate for heating a wafer and a method for fixing an electrode of the hot plate, which can easily handle the hot plate for heating a wafer and can achieve uniform heating required in a heat treatment of a wafer. .
[0006]
In addition, the structure of the heating plate for heating a wafer and the method of fixing the electrodes of the heating plate described in the present application do not correspond to the prior art of the structure of the heating plate for heating a wafer and the method of fixing the electrodes of the heating plate described above. As far as there is no known example similar to the present application, at the time of this application, there is no prior art document information to be disclosed.
[0007]
[Means for Solving the Problems]
In order to solve the above-mentioned problems, the method for fixing an electrode of a heating plate for heating a wafer according to the present invention comprises a heating plate for heating a wafer used in a wafer heating process in a semiconductor wafer manufacturing process. And the electrode of the resistance heating element is fixed, and an insertion portion having a diameter larger than that of the metal pin is continuously provided at the base of the metal pin serving as the electrode of the resistance heating element. After inserting the insertion portion into the dovetail groove engraved on the ceramic substrate, the insertion portion is rotated or slid with respect to the dovetail groove to engage with the dovetail groove fixing portion provided narrow in the opening of the dovetail groove. The metal pins are stopped and fixed to the ceramic substrate, and the metal pins are connected to the ends of the resistance heating element.
[0008]
The structure of the heating plate for heating a wafer according to the present invention is a structure of a heating plate for heating a wafer used for a wafer heating process in a semiconductor wafer manufacturing process, and generates heat by energizing a ceramic substrate having a dovetail groove. A resistance heating element to be formed, and a metal pin serving as an electrode of the resistance heating element. The metal pin has an inverted T-shape formed by connecting an expanded insertion portion to a root portion. From the inserted state of the dovetail groove of the ceramic substrate, the metal pin is turned or slid with respect to the dovetail groove so as to be engaged with the dovetail groove fixing portion provided narrow in the opening of the dovetail groove, and the metal pin is fixed to the ceramic substrate. , And the metal pin is connected to the end of the resistance heating element.
[0009]
According to these, after inserting the insertion portion into the dovetail groove, the metal pin is fixed to the dovetail groove fixing portion provided in the narrow portion of the dovetail groove by turning or sliding to fix the metal pin to the ceramic substrate. The ceramic substrate, the end of the resistance heating element, and the metal pin can be easily and firmly connected.
[0010]
Further, since the metal pins are not detached from the ceramic substrate, the hot plate for heating the wafer can be used repeatedly.
[0011]
Further, since there are only small-sized projections of the metal pins on the wafer heating hot plate, handling of the wafer heating hot plate becomes easy.
[0012]
In addition, the metal pins and the ends of the resistance heating element can be firmly connected to the ceramic substrate, so that uniform heating required for the heat treatment of the wafer is achieved.
[0013]
The dovetail fixing portion of the dovetail has a dovetail slope that gradually increases in diameter from an opening of the dovetail to a deep part of the dovetail, and the insertion part has an insertion part slope that is substantially in contact with the dovetail slope. It is preferable that the insertion part is locked to the dovetail groove fixing part of the dovetail groove by contacting the insertion part slope surface with the dovetail groove slope surface.
[0014]
According to this preferred aspect, the insertion portion slope is brought into contact with the dovetail groove slope of the dovetail fixing portion and the insertion portion is locked to the dovetail groove fixing portion of the dovetail groove. As a result, it is possible to effectively prevent damage to the ceramic substrate due to stress concentration.
[0015]
The dovetail opening has a generally oval long hole shape, and the insertion portion is formed into an oval shape that generally matches the shape of the dovetail opening and can be inserted into the dovetail opening. It is preferable that
[0016]
According to this preferred aspect, since the insertion portion is formed in an oval shape that generally conforms to the shape of the opening of the dovetail groove, there is little excessive opening in the opening, so that the strength of the ceramic substrate is maintained. However, the metal pins can be more firmly connected to the ceramic substrate.
[0017]
In the structure of the heating plate for heating a wafer and the electrode fixing method for the heating plate according to the present invention, the insertion portion of the metal pin is inserted into the opening portion of the dovetail groove so that the insertion portion of the metal pin is metal. Preferably, the insertion portion is locked to the dovetail groove fixing portion by turning about 90 degrees with respect to the opening of the dovetail groove around the axis of the pin.
[0018]
According to this preferred aspect, the insertion portion is locked by the dovetail fixing portion by turning the insertion portion approximately 90 degrees about the axis of the metal pin with respect to the opening of the dovetail groove. As a result of reducing the excessive opening of 4a, the metal pins can be more firmly connected to the ceramic substrate while maintaining the strength of the ceramic substrate.
[0019]
The dovetail opening has a generally oval long hole shape, and has a circular opening with an enlarged opening at one end of the long axis of the oval, and the insertion portion has a circular shape of the dovetail. It is formed in a circular shape in cross section that generally conforms to the shape of the opening, and can be inserted into the circular opening of the dovetail groove. After inserting the insertion portion into the dovetail groove from this circular opening, the other end of the opening is Preferably, the insertion portion is slid in the direction to lock the insertion portion to the dovetail fixing portion.
[0020]
According to this preferred aspect, after the insertion portion is inserted from the circular opening at one end of the long axis of the oval, it is linearly slid in the direction of the other end of the opening and locked to the dovetail fixing portion. Since it is possible, the inclined surface of the insertion portion and the inclined surface of the dovetail groove can be configured as planes that are easy to process.
[0021]
Further, the metal pins are made of a resistive heat-generating material, and generate heat when energized, thereby suppressing heat radiation from a power supply line connected to the metal pins and making the temperature of the wafer heating hot plate uniform. Is preferred.
[0022]
According to this preferred aspect, since the metal pins are energized to generate heat, heat radiation from the power supply line connected to the metal pins is suppressed, and the temperature of the wafer heating hot plate is made uniform, so that more effect is obtained. Thus, the wafer can be uniformly heated.
[0023]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.
[0024]
FIG. 1 is a conceptual diagram showing a configuration of a wafer heating hot platen 10 according to an embodiment of the present invention, and FIG. 2 is an end of a resistance heating element 2 of the wafer heating hot platen 10 according to the embodiment of the present invention. It is a top view showing composition of part 2a.
[0025]
Referring to FIGS. 1 and 2, a heating platen 10 for heating a wafer according to a first embodiment of the present invention shown in FIG. 1 serves as a ceramic substrate 1, a resistance heating element 2, and electrodes of the resistance heating element 2. And a metal pin 3.
[0026]
The ceramic substrate 1 is a member serving as a base of the heating platen 10 for heating a wafer. Since the ceramic substrate 1 is required to uniformly heat the entire surface of a semiconductor wafer (not shown) as a product, it is necessary to have a material and a shape similar to the wafer. For this reason, as a material, a ceramic of a type having a thermal characteristic similar to that of a wafer as a product is employed, and is formed into a disk shape in accordance with the shape of a semiconductor wafer.
[0027]
The resistance heating element 2 generates heat by passing an electric current and heats the entire wafer heating hot platen 10 and the wafer, and is composed of a plate-like heating wire such as a nichrome wire or a tungsten wire. It is formed so as to meander on the ceramic substrate 1 in order to increase the calorific value and to uniformly heat the wafer.
[0028]
A through hole 2b is formed in an end 2a of the resistance heating element 2, and the through hole 2b can be connected to the resistance heating element 2 by solder through a metal pin 3 serving as an electrode of the resistance heating element 2. ing.
[0029]
Next, FIG. 3 is a plan view showing the configuration of the dovetail groove 4 of the wafer heating hot platen 10 according to the first embodiment of the present invention, and FIG. 4 is a sectional view taken along line AA of FIG. FIG. 5 is a perspective view showing an insertion state in which the insertion portion 6 is inserted into the dovetail groove 4 of the wafer heating hot platen 10 according to the first embodiment of the present invention, and FIG. FIG. 4 is a perspective view showing a locked state locked in the dovetail groove 4.
[0030]
As shown in FIGS. 3 and 4, a dovetail groove 4 is formed on the surface of the ceramic substrate 1 by cutting using a means such as a diamond cutter.
[0031]
The dovetail groove 4 has an opening 4a having a substantially oval long hole shape, and an insertion portion 6 (FIG. 5) of the metal pin 3 described later can be locked in the opening 4a. A dovetail fixing portion 5 provided in a narrow space is provided.
[0032]
That is, the dovetail groove 4 has an oval bottom 4b having a short diameter of about 1.4 to 2.2 mm with respect to an opening 4a having a short diameter of about 1.2 to 2.0 mm. 4b, a dovetail groove gradient surface 5a is formed which gradually increases in diameter from the opening 4a of the dovetail groove 4 to the deep portion of the dovetail groove 4 and is provided with a dovetail groove gradient. The above-mentioned dovetail fixing portion 5 is constituted by the surface 5a.
[0033]
The metal pins 3 serve to fix the ceramic substrate 1 and the end 2 a (FIG. 2) of the resistance heating element 2, and serve as electrodes of the resistance heating element 2. As shown in FIGS. 5 and 6, the metal pin 3 has an inverted T-shape in which an insertion portion 6 having a diameter larger than that of the metal pin 3 is continuously provided at a root portion of the metal pin 3.
[0034]
In the present embodiment, the inverted T-shape is formed by cutting a metal rod member. In the present embodiment, nichrome and constantantan are used as materials in order to more effectively perform uniform heating. A nickel pin made of a resistive heat-generating material is used, and the metal pin made of the resistive heat-generating material is energized to generate heat, thereby suppressing heat radiation from a power supply line connected to the metal pin and heating the wafer. It is configured to make the temperature of the heating plate uniform.
[0035]
The insertion portion 6 is formed in a substantially oval shape and can be inserted into the opening 4a of the dovetail groove 4 as shown in FIG.
[0036]
In addition, in the present embodiment, the insertion portion 6 has an insertion portion gradient surface 6a formed of a conical surface that is substantially in contact with the dovetail groove gradient surface 5a. By turning about 90 degrees with respect to the opening 4a of the dovetail groove 4 about the axis of the metal pin 3, the insertion portion gradient surface 6a is brought into contact with the dovetail groove gradient surface 5a, and the insertion portion is moved. It is configured to be able to be in a locked state (FIG. 6) for locking to the fixing portion.
[0037]
When the insertion portion 6 is locked in the dovetail groove 4, the insertion portion 6 and the dovetail groove are formed in order to prevent the stress relating to the thermal expansion of the insertion portion 6 from acting on the ceramic substrate 1. A slight gap is provided between the base 4 and the bottom 4b.
[0038]
Next, with reference to FIG. 7, a description will be given of a structure of a heating plate for heating a wafer, an electrode fixing method of the heating plate, and its operation according to the first embodiment of the present invention.
[0039]
FIG. 7 is an explanatory view showing the structure of the wafer heating hot plate and the method of fixing the electrodes of the hot plate according to the first embodiment of the present invention. FIG. 2B is a plan view showing the inserted state, and FIG. 2B is a side view showing the inserted state of FIG. (C) is a side view showing a locked state of turning about 90 degrees with respect to the opening 4a of the dovetail groove 4 about the axis of the metal pin 3 from the inserted state, and (d) is a side view. , (C) are side views as viewed from directions different from each other by 90 degrees.
[0040]
Referring to these figures, the structure of the hot plate for heating a wafer and the method of fixing the electrodes on the hot plate according to the first embodiment of the present invention are as shown in FIGS. 7 (a) and 7 (b). An insertion portion 6 having a diameter larger than that of the metal pin 3 is continuously connected to a root portion of the metal pin 3 serving as an electrode of the resistance heating element 2 to form an inverted T-shape. And the end 2 a of the resistance heating element 2 is inserted through the metal pin 3.
[0041]
Next, from this inserted state, the insertion portion 6 is turned about 90 degrees about the axis of the metal pin 3 with respect to the dovetail groove 4 with respect to the opening 4a of the dovetail groove 4 to thereby obtain FIG. As shown in (d), the insertion portion sloped surface 6a is brought into contact with the dovetail groove slope 5a, and the insertion portion is locked to the dovetail groove fixing portion to fix the metal pin 3 to the ceramic substrate 1.
[0042]
Further, the end 2a of the resistance heating element 2 and the metal pin 3 serving as an electrode of the resistance heating element 2 are connected by solder 7 along a through hole 2b formed in the end 2a of the resistance heating element 2.
[0043]
At this time, a slight gap is provided between the insertion portion 6 and the bottom 4b of the dovetail groove 4 in order to prevent the stress relating to the thermal expansion of the insertion portion 6 from acting on the ceramic substrate 1. .
[0044]
Finally, although not shown in detail, the head of the metal pin 3 fixed on the ceramic substrate 1 and a terminal of a lead wire (not shown) from a power supply are welded so that the resistance heating element 2 can be energized.
[0045]
As described above, according to the structure of the wafer heating hot plate and the method of fixing the electrodes of the hot plate according to the first embodiment of the present invention, the insertion portion 6 is inserted into the dovetail groove 4 and then turned. The metal pin 3 is fixed to the ceramic substrate 1 by being locked to the dovetail fixing portion 5 provided narrow in the opening 4a of the dovetail 4, so that the ceramic substrate 1, the end 2a of the resistance heating element 2, The metal pin 3 can be easily and firmly connected.
[0046]
Further, since the metal pins 3 are not detached from the ceramic substrate 1, the hot plate for heating the wafer can be used repeatedly.
[0047]
Further, since there are only small-sized projections of the metal pins 3 on the wafer heating hot plate, handling of the wafer heating hot plate becomes easy.
[0048]
In addition, the metal pins 3 and the end portions 2a of the resistance heating element 2 can be firmly connected to the ceramic substrate 1, so that uniform heating required in the heat treatment of the wafer is achieved.
[0049]
According to the structure of the hot platen for heating a wafer and the method of fixing the electrodes of the hot platen according to the first embodiment of the present invention, the dovetail groove surface of the dovetail fixing portion 5 is fixed to the dovetail slope surface 6a of the insert portion 6. Since the insertion portion 6 is engaged with the dovetail groove fixing portion 5 of the dovetail groove 4 by being brought into contact with the surface 5a, the stress related to the locking in the dovetail groove fixing portion 5 can be dispersed. 1 can be effectively prevented.
[0050]
In addition, the insertion portion 6 is locked to the dovetail groove fixing portion 5 by rotating the insertion portion 6 by about 90 degrees with respect to the opening 4a of the dovetail groove 4 about the axis of the metal pin 3, so that the opening 4a is formed. As a result, the metal pins 3 can be more firmly connected to the ceramic substrate 1 while maintaining the strength of the ceramic substrate 1.
[0051]
Next, FIG. 8 is an explanatory view showing a structure of a heating plate for heating a wafer and a method of fixing electrodes of the heating plate according to the second embodiment of the present invention. (B) shows a side view of (a), respectively. (C) is a side view showing a locked state in which the metal pin 3 is turned about 90 degrees with respect to the opening 4a of the dovetail groove 4 about the axis of the metal pin 3 from the inserted state, and (d) is a side view. The side view which looked at the locking state of c) from 90 degrees different directions is shown, respectively.
[0052]
As shown in FIGS. 8A and 8B, in the second embodiment, the insertion portion 6 is formed in an oval shape that generally matches the shape of the opening 4a of the dovetail groove 4.
[0053]
As described above, according to the structure of the heating plate for heating a wafer and the method for fixing the electrodes of the heating plate according to the second embodiment of the present invention, the insertion portion 6 is generally adapted to the shape of the opening 4a of the dovetail groove 4. As a result, the excessive opening of the opening 4a can be reduced, so that the metal pins 3 can be more firmly connected to the ceramic substrate 1 while maintaining the strength of the ceramic substrate 1. Can be.
[0054]
FIG. 9 is an explanatory view showing the structure of a heating plate for heating a wafer and a method of fixing electrodes of the heating plate according to the third embodiment of the present invention. FIG. 2B is a plan view showing the inserted state, and FIG. 2B is a side view of FIG. (C) is a side view showing a locked state in which the insertion portion 6 is slid in the direction of the other end of the opening 4a to lock the insertion portion 6 with the dovetail groove fixing portion 5 from the inserted state. (D) is a side view showing the locked state of (c) viewed from a direction different by 90 degrees.
[0055]
As shown in FIGS. 9 (a) and 9 (b), in the third embodiment, the opening 4a of the dovetail groove 4 has a substantially elliptical long hole shape, and one end of the long axis of the long ellipse. And a circular opening 4c having an enlarged opening. The insertion portion 6 is formed into a circular cross-section having a shape substantially conforming to the shape of the circular opening 4c of the dovetail groove 4 and can be inserted into the circular opening 4c of the dovetail groove 4. After the insertion portion 6 is inserted into the groove 4, the insertion portion 6 is slid in the direction of the other end of the opening 4 a to lock the insertion portion 6 with the dovetail groove fixing portion 5.
[0056]
As described above, in the third embodiment, after the insertion portion 6 is inserted from the circular opening 4c at one end of the long axis of the oval, the insertion portion 6 is linearly slid toward the other end of the opening 4a to fix the dovetail groove. Since the insertion part can be locked to the part 5, the insertion part slope surface 6a and the dovetail groove slope surface 5a can be configured as planes that are easy to process.
[0057]
In the first to third embodiments, the metal pins 3 are energized to generate heat, thereby suppressing heat radiation from an unillustrated power supply line connected to the metal pins 3 to thereby control the wafer heating hot platen 10. , The wafer can be more uniformly heated more effectively.
[0058]
The above-described embodiment is merely an example of a preferred specific example of the present invention, and the present invention is not limited to the above-described embodiment.
[0059]
For example, the shape of the ceramic substrate 1 does not limit the present invention. It is not always necessary to form a disk-shaped shape as shown in the figure.
[0060]
Further, the material and the shape of the resistance heating element 2 are not limited to the present invention. The resistance heating element 2 is formed of a heating wire such as a nichrome wire or a tungsten wire, and is not necessarily arranged on the ceramic substrate 1 so as to meander.
[0061]
The opening 4a of the dovetail 4 is not necessarily limited to a generally oval long hole. Various design changes are possible as long as the dovetail fixing portion 5 provided in a narrow space that can insert and lock the insertion portion 6 of the metal pin 3 is provided.
[0062]
In the present embodiment, the inverted T-shape of the insertion portion 6 is also formed by cutting a metal bar member, but a small bar-shaped or plate-shaped piece of metal is welded to the root of the metal pin 3. Alternatively, it can be formed.
[0063]
Further, the insertion portion 6 does not necessarily need to be formed in a substantially oval shape, and various design changes can be made as long as it can be inserted into the opening 4a of the dovetail groove 4 and can be locked to the dovetail groove fixing portion 5. It is possible.
[0064]
The end 2a of the resistance heating element 2 may be inserted into the metal pin 3 before or after the insertion portion 6 is locked in the dovetail groove 4, or the insertion portion 6 may be inserted from the head side of the metal pin 3. It may be from the side.
[0065]
In addition, it goes without saying that various design changes are possible within the scope of the claims of the present invention.
[0066]
【The invention's effect】
As described above, according to the present invention, not only can the ceramic substrate, the end of the resistance heating element and the electrode be firmly connected, but also the heating plate for heating the wafer can be used repeatedly. The heat plate for use is easy to handle and has a remarkable effect of achieving uniform heating required for the heat treatment of the wafer.
[Brief description of the drawings]
FIG. 1 is a conceptual diagram showing a configuration of a wafer heating hot plate according to an embodiment of the present invention.
FIG. 2 is a plan view showing a configuration of an end of a resistance heating element of the wafer heating hot plate according to the embodiment of the present invention.
FIG. 3 is a plan view showing a configuration of a dovetail groove of the hot plate for heating a wafer according to the first embodiment of the present invention.
FIG. 4 is a sectional view taken along line AA of FIG. 3;
FIG. 5 is a perspective view showing an inserted state in which an insertion portion is inserted into a dovetail groove of the wafer heating hot platen according to the first embodiment of the present invention.
FIG. 6 is a perspective view showing a locked state in which an insertion portion is locked in a dovetail groove in the wafer heating hot platen according to the first embodiment of the present invention.
FIG. 7 is an explanatory view showing a structure of a wafer heating hot plate and a method of fixing electrodes of the hot plate according to the first embodiment of the present invention, wherein (a) shows an insertion portion inserted into a dovetail groove; FIG. 2B is a plan view showing the inserted state, and FIG. 2B is a side view showing the inserted state of FIG. (C) is a side view showing a locked state in which the metal pin is turned approximately 90 degrees with respect to the opening of the dovetail groove about the axis of the metal pin from the inserted state, and (d) is a side view showing (c). 2) shows side views of the locked state of FIG.
FIG. 8 is an explanatory view showing a structure of a heating plate for heating a wafer and a method of fixing electrodes of the heating plate according to the second embodiment of the present invention, wherein (a) shows an insertion portion inserted into a dovetail groove; FIG. 2B is a plan view showing an inserted state, and FIG. 2B is a side view of FIG. (C) is a side view showing a locked state in which the metal pin is turned approximately 90 degrees with respect to the opening of the dovetail groove about the axis of the metal pin from the inserted state, and (d) is a side view of (c). The side view which looked at the locking state from 90 degrees different directions is shown, respectively.
FIG. 9 is an explanatory view showing a structure of a heating plate for heating a wafer and a method of fixing electrodes of the heating plate according to the third embodiment of the present invention, wherein (a) shows an insertion portion inserted into a dovetail groove; FIG. 2B is a plan view showing the inserted state, and FIG. 2B is a side view of FIG. (C) is a side view showing a locked state in which the insertion section is slid in the direction of the other end of the opening to lock the insertion section with the dovetail fixing section from the inserted state, and (d) is a side view. , (C) are side views as viewed from directions different from each other by 90 degrees.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Ceramic substrate 2 Resistance heating element 2a End of resistance heating element 3 Metal pin 4 Dove groove 4a Opening 4c Circular opening 5 Dove groove fixing part 5a Dove groove sloped surface 6 Insertion part 6a Inserted part slope 10 Heat for wafer heating Board

Claims (7)

半導体ウェハ製造工程のウェハ加熱処理に用いるウェハ加熱用熱盤において、ウェハ加熱用熱盤のセラミック基板に抵抗発熱体の端部と、抵抗発熱体の電極とを固定する方法であって、
上記抵抗発熱体の電極となる金属ピンの根元の部分に金属ピンよりも拡径した挿入部を連設して逆Ｔ字状とするとともに、
上記挿入部を上記セラミック基板に刻設した蟻溝に挿入した後、蟻溝に対し旋回もしくはスライドさせて蟻溝の開口部に狭隘に設けられた蟻溝固定部に係止して金属ピンをセラミック基板に固定し、
この金属ピンと抵抗発熱体の端部とを接続することを特徴とするウェハ加熱用熱盤の電極固定方法。A method for fixing an end of a resistance heating element and an electrode of the resistance heating element to a ceramic substrate of the heating plate for wafer heating in a heating plate for wafer heating used in a wafer heating process in a semiconductor wafer manufacturing process,
An insertion portion having a diameter larger than that of the metal pin is continuously provided at the base of the metal pin serving as an electrode of the resistance heating element to form an inverted T-shape.
After inserting the insertion portion into the dovetail groove engraved on the ceramic substrate, the metal pin is turned by rotating or sliding with respect to the dovetail groove to engage with the dovetail groove fixing portion provided narrow in the opening of the dovetail groove. Fixed on a ceramic substrate,
An electrode fixing method for a heating plate for heating a wafer, comprising connecting the metal pin to an end of a resistance heating element. 半導体ウェハ製造工程においてウェハ加熱処理に用いるウェハ加熱用熱盤の構造であって、
蟻溝を刻設したセラミック基板と、通電により熱を発生させる抵抗発熱体と、この抵抗発熱体の電極となる金属ピンとを備え、
上記金属ピンは、根元の部分に拡径した挿入部が連設されて逆Ｔ字状を形成し、
上記挿入部を上記セラミック基板の蟻溝に挿入した挿入状態から、金属ピンを蟻溝に対し旋回もしくはスライドさせて蟻溝の開口部に狭隘に設けられた蟻溝固定部に係止して金属ピンをセラミック基板に固定し、
この金属ピンと上記抵抗発熱体の端部とを接続したことを特徴とするウェハ加熱用熱盤の構造。The structure of a heating plate for heating a wafer used in a wafer heating process in a semiconductor wafer manufacturing process,
A ceramic substrate with a dovetail groove, a resistance heating element that generates heat by energization, and a metal pin serving as an electrode of the resistance heating element,
The metal pin has an inverted T-shape formed by connecting an insertion portion having an enlarged diameter to a root portion,
From the inserted state in which the insertion portion is inserted into the dovetail groove of the ceramic substrate, the metal pin is turned or slid with respect to the dovetail groove so as to engage with the dovetail groove fixing portion provided narrowly in the opening of the dovetail groove, thereby securing metal Fix the pin to the ceramic substrate,
A structure of a heating plate for heating a wafer, wherein the metal pin is connected to an end of the resistance heating element. 上記蟻溝の蟻溝固定部は、蟻溝の開口部から蟻溝の深部にかけて漸次拡径する蟻溝勾配面を有し、
上記挿入部は、上記蟻溝勾配面に概ね接する挿入部勾配面を有し、
上記挿入部勾配面を蟻溝勾配面に当接させることにより、挿入部を蟻溝の蟻溝固定部に係止することを特徴とする請求項２に記載のウェハ加熱用熱盤の構造。The dovetail fixing portion of the dovetail has a dovetail gradient surface that gradually increases in diameter from the opening of the dovetail to the deep part of the dovetail,
The insertion portion has an insertion portion gradient surface that is substantially in contact with the dovetail groove gradient surface,
The structure of the heating plate for heating a wafer according to claim 2, wherein the insertion portion is locked to a dovetail fixing portion of the dovetail by contacting the slope of the insertion portion with the slope of the dovetail. 上記蟻溝の開口部は概ね長円形の長穴形状を呈し、
上記挿入部は、この蟻溝の開口部の形状に概ね適合する長円形の形状に形成されて蟻溝の開口部に挿入可能であることを特徴とする請求項２もしくは請求項３のいずれかに記載のウェハ加熱用熱盤の構造。The opening of the dovetail groove has a generally oblong oval shape,
4. The dovetail groove according to claim 2, wherein the insertion portion is formed in an oval shape that generally conforms to the shape of the dovetail groove, and is insertable into the dovetail groove opening. The structure of the hot plate for heating a wafer according to the above. 上記蟻溝の開口部に金属ピンの挿入部が挿入された挿入状態から、金属ピンの挿入部を金属ピンの軸を中心に蟻溝の開口部に対して概ね９０度旋回させることにより、挿入部を蟻溝固定部に係止することを特徴とする請求項２ないし請求項４のいずれかに記載のウェハ加熱用熱盤の構造。When the insertion portion of the metal pin is inserted into the opening of the dovetail groove, the insertion portion of the metal pin is turned by approximately 90 degrees with respect to the opening of the dovetail groove around the axis of the metal pin, thereby inserting the metal pin. The structure of the heating plate for heating a wafer according to any one of claims 2 to 4, wherein the portion is locked to the dovetail fixing portion. 上記蟻溝の開口部は、概ね長円形の長穴形状を呈するとともに、この長円形の長軸の一端に、開口が拡がった円形開口部を有し、
上記挿入部は、この蟻溝の円形開口部の形状に概ね適合する断面円形の形状に形成されて蟻溝の円形開口部に挿入可能であり、
この円形開口部から蟻溝に上記挿入部を挿入した後、開口部の他端の方向に挿入部をスライドさせて挿入部を蟻溝固定部に係止することを特徴とする請求項２ないし請求項４のいずれかに記載のウェハ加熱用熱盤の構造。The dovetail opening has a generally oval long hole shape, and at one end of the long axis of the oval, has a circular opening with an expanded opening.
The insertion portion is formed in a circular cross-sectional shape that generally matches the shape of the circular opening of the dovetail groove, and can be inserted into the circular opening of the dovetail groove,
4. The method according to claim 2, wherein after inserting the insertion portion into the dovetail groove from the circular opening, the insertion portion is slid in the direction of the other end of the opening to lock the insertion portion to the dovetail fixing portion. A structure of the heating plate for heating a wafer according to claim 4. 上記金属ピンは、抵抗発熱性の材料から構成され、通電されて熱を発生することにより、金属ピンに接続される給電線からの放熱を抑えてウェハ加熱用熱盤温度を均一化するものであることを特徴とする請求項２ないし請求項６のいずれかに記載のウェハ加熱用熱盤の構造。The metal pins are made of a resistive heat-generating material, and generate heat when energized, thereby suppressing heat radiation from a power supply line connected to the metal pins and making the temperature of the wafer heating hot plate uniform. 7. The structure of a heating plate for heating a wafer according to claim 2, wherein the heating plate is provided.
JP2003182270A 2002-06-26 2003-06-26 Structure of hot plate for heating wafer, and method for fixing electrode of hot plate Withdrawn JP2004087476A (en)

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KR101161868B1 (en) * 2011-01-24 2012-07-04 문홍진 Electric heating apparatus of boiler and method of manufacture the same
WO2019087645A1 (en) * 2017-10-30 2019-05-09 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 Heater and method of manufacturing same
CN110881694A (en) * 2019-05-16 2020-03-17 深圳麦克韦尔科技有限公司 Electronic atomization device, atomization assembly thereof and manufacturing method of atomization assembly
TWI845684B (en) * 2019-05-30 2024-06-21 日商東京威力科創股份有限公司 Method for processing dovetail groove and substrate processing device
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Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101161868B1 (en) * 2011-01-24 2012-07-04 문홍진 Electric heating apparatus of boiler and method of manufacture the same
WO2019087645A1 (en) * 2017-10-30 2019-05-09 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 Heater and method of manufacturing same
JP2019083115A (en) * 2017-10-30 2019-05-30 モメンティブ・パフォーマンス・マテリアルズ・ジャパン合同会社 Heater and manufacturing method for the same
KR20200078511A (en) * 2017-10-30 2020-07-01 모멘티브 쿼츠 재팬 고도가이샤 Heater and its manufacturing method
KR102586537B1 (en) 2017-10-30 2023-10-10 모멘티브 테크놀로지스 재팬 가부시키가이샤 Heater and its manufacturing method
CN110881694A (en) * 2019-05-16 2020-03-17 深圳麦克韦尔科技有限公司 Electronic atomization device, atomization assembly thereof and manufacturing method of atomization assembly
CN110881694B (en) * 2019-05-16 2024-04-19 深圳麦克韦尔科技有限公司 Electronic atomizing device, atomizing assembly thereof and manufacturing method of atomizing assembly
US12121064B2 (en) 2019-05-16 2024-10-22 Shenzhen Smoore Technology Limited Electronic atomization device and atomization assembly thereof, and manufacturing method of atomization assembly
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